Chemical mechanical polishing slurry and preparation method and uses thereof

Abstract

This invention provides a chemical mechanical polishing (CMP) slurry, its preparation method, and its applications. The CMP slurry comprises: abrasive particles, an oxidant, a corrosion inhibitor, a pH adjuster, a polishing accelerator, and water. By introducing a corrosion inhibitor into the CMP slurry, this invention effectively suppresses the corrosion of gallium arsenide (GaAs) wafers and achieves excellent polishing results. The removal rate of GaAs can reach 10,000 Å / min or higher, the post-polishing surface roughness can be as low as 0.32 nm, and the static corrosion rate can be as low as 125.31 Å / min. This achieves high polishing rates and good surface roughness while maintaining a low static corrosion rate and low production costs, enabling efficient and stable polishing of GaAs.

Description

Technical Field

[0001] This invention belongs to the field of chemical reagents for semiconductor manufacturing, and particularly relates to a chemical mechanical polishing slurry, its preparation method, and its uses. Prior Technology

[0002] Gallium arsenide (GaAs) is a second-generation semiconductor material of the III-V group, characterized by high electron mobility (8500 cm² / V·s) and a wide bandgap (1.43 eV). It is internationally recognized as the most mature compound semiconductor material after silicon and is one of the most important supporting materials in the optoelectronics and microelectronics industries. It is widely used in the manufacture of high-frequency, high-speed, high-power, low-noise, high-temperature resistant, and radiation-resistant integrated circuits and has become a key technology for "modern electronic information products" and "information superhighways".

[0003] The surface quality of gallium arsenide (GaAs) wafers directly affects the performance and yield of devices; the better the surface quality of the polished wafer, the higher the performance and yield of the device. Chemical mechanical polishing (CMP), as a commonly used process for planarization of semiconductor materials, is considered the most effective method for achieving global planarization of materials. CMP is a combined process of chemical etching and mechanical abrasion. This process involves placing the wafer on a CMP machine and applying downward pressure, causing the wafer to mechanically rub against a rotating polishing pad. An appropriate flow rate of polishing slurry is injected, forming an easily removable etched oxide film on the wafer surface. The planarization of the wafer is achieved through the synergistic effect of chemical film formation and mechanical film removal.

[0004] Currently, from the perspective of gallium arsenide removal mechanisms, under the synergistic effect of mechanical and chemical forces, the chemical action has a more significant impact on the removal rate. While polishing with conventional oxidants such as hydrogen peroxide and sodium hypochlorite can achieve good polishing rates, the polishing process often results in slight corrosion of the polished surface or severe corrosion of the unpolished surface, greatly affecting the yield of the equipment. Summary of the Invention

[0005] In view of this, the purpose of this invention is to provide a chemical mechanical polishing slurry, its preparation method, and its uses. The chemimechanical polishing slurry, used for gallium arsenide polishing, achieves a high polishing rate and good surface roughness while exhibiting a low static corrosion rate and low production cost.

[0006] To achieve this objective, the present invention adopts the following technical solution: In the first state sample, the present invention provides a chemical mechanical polishing fluid, comprising: abrasive particles, an oxidant, a corrosion inhibitor, a pH adjuster, a polishing accelerator, and water; wherein the corrosion inhibitor is selected from at least one of nitrogen-containing five-membered heterocyclic compounds, amino alcohol compounds, and amino acids or amino acid derivatives.

[0007] Preferably, the number of N atoms in the nitrogen-containing five-membered heterocyclic compound is ≥3.

[0008] Preferably, the nitrogen-containing five-membered heterocyclic compound is a triazole compound with an electron-donating group, wherein the electron-donating group includes any one or more of amino, methyl, and hydroxyl groups.

[0009] Preferably, the amino alcohol compound is an amino alcohol compound with a straight main chain and ≤8 carbon atoms.

[0010] Preferably, the amino acid or amino acid derivative does not contain electron-withdrawing groups, wherein the electron-withdrawing groups include any one or more of carbonyl, acetyl, and ester groups.

[0011] Preferably, the triazole compound with an electron-donating group is selected from at least one of 4-methyl-1H-benzotriazole, 5-methyl-benzotriazole, 5,6-dimethyl-1,2,3-benzotriazole, 1-hydroxybenzotriazole, 3-methyl-1H-1,2,4-triazole, 3-amino-1,2,4-triazole, 4-amino-1,2,4-triazole, and 3,5-diamino-1,2,4-triazole.

[0012] Preferably, the amino alcohol compound is selected from at least one of 2-diethylamino-1-ethanol, 2-dipropylaminoethanol, 2-dimethylamino-2-methyl-1-propanol, 1-dimethylamino-2-propanol, 2-amino-2-methyl-1-propanol, DL-2-amino-1-butanol, 2-amino-2-pentanol, and 3-amino-4-octanol.

[0013] Preferably, the amino acid is selected from at least one of L-arginine, L-proline, methionine, L-serine, and creatine.

[0014] Preferably, the amino acid derivative is selected from tris(hydroxymethyl)methylglycine.

[0015] Preferably, the abrasive particles are selected from at least one of modified silica, silica sol, fumed silica, alumina, and cerium oxide.

[0016] Preferably, the particle size of the grinding particles is 20~200 nm.

[0017] Preferably, the modified silicon dioxide is obtained by modifying silicon dioxide with a silane reagent, and the modified silicon dioxide has a zeta potential >30 mV under acidic conditions.

[0018] Preferably, the silane reagent is selected from 3-aminopropyltrimethoxysilane.

[0019] Preferably, the mass ratio of silicon dioxide to silane reagent is (750~1000):5.

[0020] Preferably, the polishing accelerator includes at least one of sodium nitrate, potassium nitrate, and ammonium nitrate.

[0021] Preferably, the oxidant is a peroxide, which includes at least one of hydrogen peroxide, sodium peroxide, ammonium persulfate, and peracetic acid.

[0022] Preferably, the pH adjuster includes an acidic pH adjuster or a basic pH adjuster. The acidic pH adjuster includes an organic acid and / or an inorganic acid, wherein the inorganic acid is selected from at least one of hydrochloric acid, nitric acid, and sulfuric acid, and the organic acid is selected from at least one of succinic acid, malonic acid, tartaric acid, and gluconic acid. The basic pH adjuster includes potassium hydroxide and / or sodium hydroxide.

[0023] Preferably, the pH value of the chemical mechanical polishing fluid is 3 to 5.

[0024] Preferably, the chemical mechanical polishing fluid further includes additives, including antibacterial agents and / or dispersants.

[0025] Preferably, the abrasive particles have a mass percentage content of 0.5 to 30 wt% in the chemical mechanical polishing slurry.

[0026] More preferably, the abrasive particles have a mass percentage content of 0.5 to 20 wt% in the chemical mechanical polishing slurry.

[0027] Preferably, the oxidant has a mass percentage content of 0.5 to 10 wt% in the chemical mechanical polishing slurry.

[0028] More preferably, the oxidant has a mass percentage content of 3-7 wt% in the chemical mechanical polishing slurry.

[0029] Preferably, the corrosion inhibitor has a mass percentage content of 0.025~0.3 wt% in the chemical mechanical polishing slurry.

[0030] More preferably, the corrosion inhibitor has a mass percentage content of 0.025~0.1 wt% in the chemical mechanical polishing slurry.

[0031] Preferably, the polishing accelerator has a mass percentage content of 0.2~5 wt% in the chemical mechanical polishing slurry.

[0032] More preferably, the polishing accelerator has a mass percentage content of 0.5~2 wt% in the chemical mechanical polishing slurry.

[0033] Preferably, the chemical mechanical polishing fluid comprises silicon dioxide abrasive particles, hydrogen peroxide, 4-amino-1,2,4-triazole, potassium nitrate, water, and a pH adjuster; Alternatively, the chemical mechanical polishing fluid may comprise silica abrasive particles, hydrogen peroxide, 4-amino-1,2,4-triazole, sodium nitrate, water, and a pH adjuster; Alternatively, the chemical mechanical polishing fluid may comprise silicon dioxide abrasive particles, hydrogen peroxide, 5-methylbenzotriazole, ammonium nitrate, water, and a pH adjuster. Alternatively, the chemical mechanical polishing fluid may comprise silicon dioxide abrasive particles, hydrogen peroxide, methyl-1H-benzotriazole, sodium nitrate, water, and a pH adjuster; Alternatively, the chemical mechanical polishing fluid may comprise silicon dioxide abrasive particles, hydrogen peroxide, methyl-1H-benzotriazole, potassium nitrate, water, and a pH adjuster. Alternatively, the chemical mechanical polishing fluid may comprise silica abrasive particles, hydrogen peroxide, 3-amino-1,2,4-triazole, ammonium nitrate, water, and a pH adjuster; Alternatively, the chemical mechanical polishing fluid may comprise silica abrasive particles, hydrogen peroxide, 3-amino-1,2,4-triazole, sodium nitrate, water, and a pH adjuster; Alternatively, the chemical mechanical polishing fluid may comprise silica abrasive particles, hydrogen peroxide, 1-hydroxybenzotriazole, potassium nitrate, water, and a pH adjuster; Alternatively, the chemical mechanical polishing fluid may comprise silica abrasive particles, hydrogen peroxide, 1-hydroxybenzotriazole, ammonium nitrate, water, and a pH adjuster; Alternatively, the chemical mechanical polishing fluid may comprise silicon dioxide abrasive particles, hydrogen peroxide, L-arginine, ammonium nitrate, water, and a pH adjuster; Alternatively, the chemical mechanical polishing fluid may comprise silicon dioxide abrasive particles, hydrogen peroxide, L-arginine, sodium nitrate, water, and a pH adjuster; Alternatively, the chemical mechanical polishing fluid may comprise silicon dioxide abrasive particles, hydrogen peroxide, L-proline, potassium nitrate, water, and a pH adjuster; Alternatively, the chemical mechanical polishing fluid may comprise silicon dioxide abrasive particles, hydrogen peroxide, L-proline, ammonium nitrate, water, and a pH adjuster; Alternatively, the chemical mechanical polishing fluid may comprise silicon dioxide abrasive particles, hydrogen peroxide, methionine, sodium nitrate, water, and a pH adjuster; Alternatively, the chemical mechanical polishing fluid may comprise silicon dioxide abrasive particles, hydrogen peroxide, methionine, potassium nitrate, water, and a pH adjuster; Alternatively, the chemical mechanical polishing slurry comprises silicon dioxide abrasive particles, hydrogen peroxide, L-serine, ammonium nitrate, water, and a pH adjuster; Alternatively, the chemical mechanical polishing fluid comprises silicon dioxide abrasive particles, hydrogen peroxide, L-serine, sodium nitrate, water, and a pH adjuster; Alternatively, the chemical mechanical polishing fluid may comprise silicon dioxide abrasive particles, hydrogen peroxide, creatine, potassium nitrate, water, and a pH adjuster. Alternatively, the chemical mechanical polishing fluid may comprise silicon dioxide abrasive particles, hydrogen peroxide, creatine, ammonium nitrate, water, and a pH adjuster; Alternatively, the chemical mechanical polishing fluid may comprise silica abrasive particles, hydrogen peroxide, tris(hydroxymethyl)methylglycine, sodium nitrate, water, and a pH adjuster; Alternatively, the chemical mechanical polishing fluid may comprise silica abrasive particles, hydrogen peroxide, tris(hydroxymethyl)methylglycine, potassium nitrate, water, and a pH adjuster; Alternatively, the chemical mechanical polishing fluid may comprise silica abrasive particles, hydrogen peroxide, 2-amino-2-methyl-1-propanol, potassium nitrate, water, and a pH adjuster; Alternatively, the chemical mechanical polishing fluid may comprise silica abrasive particles, hydrogen peroxide, DL-2-amino-1-butanol, sodium nitrate, water, and a pH adjuster; Alternatively, the chemical mechanical polishing fluid may comprise silica abrasive particles, hydrogen peroxide, DL-2-amino-1-butanol, potassium nitrate, water, and a pH adjuster; Alternatively, the chemical mechanical polishing fluid may comprise silica abrasive particles, hydrogen peroxide, 3-amino-4-octanol, ammonium nitrate, water, and a pH adjuster; Alternatively, the chemical mechanical polishing fluid may comprise silica abrasive particles, hydrogen peroxide, 3-amino-4-octanol, sodium nitrate, water, and a pH adjuster; Alternatively, the chemical mechanical polishing fluid may comprise silicon dioxide abrasive particles, hydrogen peroxide, methionine, ammonium nitrate, water, and a pH adjuster; Alternatively, the chemical mechanical polishing fluid may comprise silica abrasive particles, hydrogen peroxide, 2-aminobenzimidazole, sodium nitrate, water, and a pH adjuster; Alternatively, the chemical mechanical polishing fluid may comprise silicon dioxide abrasive particles, hydrogen peroxide, methyl-1H-benzotriazole, ammonium nitrate, water, and a pH adjuster; Alternatively, the chemical mechanical polishing fluid may comprise modified silica abrasive particles, hydrogen peroxide, L-arginine, sodium nitrate, water, and a pH adjuster; Alternatively, the chemical mechanical polishing fluid may comprise modified silica abrasive particles, hydrogen peroxide, 2-amino-2-methyl-1-propanol, potassium nitrate, water, and a pH adjuster; Alternatively, the chemical mechanical polishing fluid may comprise modified silica abrasive particles, hydrogen peroxide, 1-hydroxybenzotriazole, ammonium nitrate, water, and a pH adjuster; Alternatively, the chemical mechanical polishing fluid may comprise silicon dioxide abrasive particles, hydrogen peroxide, creatine, sodium nitrate, water, and a pH adjuster.

[0034] In the second embodiment, the present invention also provides a method for preparing the above-mentioned chemical mechanical polishing fluid, comprising the following steps: mixing abrasive particles, oxidant, corrosion inhibitor, polishing accelerator and water evenly, and adjusting the pH value with a pH adjuster to obtain the chemical mechanical polishing fluid.

[0035] In the third embodiment, the present invention also provides the use of the above-mentioned chemical mechanical polishing fluid in the polishing of gallium arsenide wafers.

[0036] Compared with the prior art, the beneficial effects of the present invention are as follows: the chemical mechanical polishing slurry provided by the present invention can better suppress the corrosion of gallium arsenide wafers by introducing corrosion inhibitors and obtain good polishing results. The removal rate of gallium arsenide can reach 10,000 Å / min or more, the surface roughness after polishing can be as low as 0.32 nm, and the static corrosion rate can be as low as 125.31 Å / min.

[0037] Furthermore, the chemical mechanical polishing slurry provided by this invention can still maintain a removal rate of over 80% when the concentration of abrasive particles is reduced from 20 wt% to 1 wt%, thus meeting most process requirements while saving costs. In addition, the abrasive particle content in the chemical mechanical polishing slurry of this invention can be as low as 1 wt%, saving approximately 90% of the cost, and significantly reducing particle residue on the polished surface, thereby reducing surface contaminants.

[0038] In summary, the chemical mechanical polishing slurry provided by this invention can achieve a lower static corrosion rate, a higher gallium arsenide removal rate, and good post-polishing roughness, thereby improving the surface condition of the polished wafer. Simple Explanation of the Diagram

[0039] Figure 1 shows a photograph of a gallium arsenide wafer after a static etching test in the polishing solution of Comparative Example 16; Figure 2 shows a photograph of a gallium arsenide wafer after a static etching test in the polishing solution of Example 24; Figure 3 is a schematic diagram of the surface roughness results of an unpolished gallium arsenide wafer measured by Nanosurf atomic force microscopy; Figure 4 is a schematic diagram of the surface roughness results of the gallium arsenide wafer after polishing with polishing slurry in Comparative Example 6, as measured by Nanosurf atomic force microscopy. Figure 5 shows the GaAs SER diagrams obtained when the corrosion inhibitors in the chemical mechanical polishing slurry are different nitrogen-containing heterocyclic compounds; Figure 6 shows the GaAs SER diagrams obtained when the corrosion inhibitors in the chemical mechanical polishing slurry are different amino acids or amino acid derivatives; Figure 7 shows the GaAs SER diagrams obtained when the corrosion inhibitors in the chemical mechanical polishing slurry are different amino alcohols; Figure 8 is a schematic diagram of the surface roughness of the gallium arsenide wafer after polishing with the polishing solution in Example 32, as measured by Nanosurf atomic force microscopy. Figure 9 is a schematic diagram of the surface roughness of the gallium arsenide wafer after polishing with the polishing solution in Example 37, as measured by Nanosurf atomic force microscopy. Figure 10 is a schematic diagram of the surface roughness of the gallium arsenide wafer after polishing with the polishing solution in Example 38, as measured by Nanosurf atomic force microscopy. Figure 11 is a schematic diagram of the surface roughness of the gallium arsenide wafer after polishing with the polishing solution in Example 24, as measured by Nanosurf atomic force microscopy. Figure 12 is a comparison of the particle size distribution of Examples 37 and 38 after being placed in an oven at 55°C for 28 days. Implementation

[0040] The technical solution of the present invention will be clearly and completely described below with reference to the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0041] The present invention provides a chemical mechanical polishing slurry for gallium arsenide wafers, comprising: abrasive particles, oxidant, corrosion inhibitor, pH adjuster, polishing accelerator and water.

[0042] In this invention, the abrasive particles are used to provide abrasive mechanical force to the chemical mechanical polishing slurry, lubricate the polishing pad and wafer surface, and serve as a carrier for delivering polishing promoters. The abrasive particles can be selected from at least one of modified silica, silica sol, fumed silica, alumina and cerium oxide, with modified silica being preferred.

[0043] For modified silicon dioxide, this invention involves taking 10 g of the modified silicon dioxide sample, adjusting the pH to acidic (pH 3.0~5.0), and testing the zeta potential to observe whether the modification was successful. Generally, a zeta potential >30 mV indicates successful modification. This ensures good stability of the colloid.

[0044] In some embodiments of the present invention, the modified silica is obtained by modifying silica with a silane reagent, more preferably by modifying silica sol with 3-aminopropyltrimethoxysilane. The preparation method can be as follows: weigh 750-1000 g of silica sol into a container and stir continuously. Then, dissolve 5 g of 3-aminopropyltrimethoxysilane in an appropriate amount of methanol and slowly add it dropwise into the container, completing the process within 30 minutes. Continue stirring for another 20 minutes.

[0045] The time and amount of substances used in the above preparation method can be adjusted as needed.

[0046] In this invention, silicon dioxide was modified by the above-mentioned 3-aminopropyltrimethoxysilane, and the product was tested for zeta potential under acidic conditions (pH 3.0~5.0). The results showed that the zeta potential was greater than 30 mV, indicating that the modification was successful.

[0047] It should be noted that in this invention, after modifying silica sol with 3-(2-aminoethylamino)propylmethyldimethoxysilane and adjusting the pH to acidic, the silica sol agglomerates and becomes unusable. Therefore, the selection of 3-aminopropyltrimethoxysilane for modifying silica sol in this invention, after screening, requires considerable ingenuity.

[0048] In this invention, the abrasive particles in the chemical mechanical polishing fluid have a mass percentage content of 0.5-30 wt%, preferably 0.5-20 wt%, and more preferably 1-5 wt%.

[0049] In this invention, the particle size of the abrasive particles is 20-200 nm, preferably 50-120 nm. In some embodiments of this invention, the particle size of the abrasive particles is 75 nm.

[0050] In this invention, the oxidant can be at least one of peroxides such as hydrogen peroxide, sodium peroxide, ammonium persulfate, and peracetic acid, with hydrogen peroxide being preferred.

[0051] In this invention, the oxidant in the chemical mechanical polishing slurry has a mass percentage content of 0.5-10 wt%, preferably 3-7 wt%.

[0052] In this invention, the corrosion inhibitor is used for corrosion resistance and can be selected from at least one of nitrogen-containing five-membered heterocyclic compounds (N atoms ≥ 3), amino alcohol compounds, and amino acids or amino acid derivatives.

[0053] In this invention, the nitrogen-containing five-membered heterocyclic compound is a triazole compound with an electron-donating group. Preferably, the electron-donating group is an amino group, a methyl group, a hydroxyl group, etc. It should be noted that under acidic conditions, gallium arsenide surfaces typically carry a large number of positive charges. When the corrosion inhibitor has an electron-donating group on its surface, it can better generate electrostatic adsorption with the wafer surface, facilitating the formation of a protective film on the surface, thereby playing a role in inhibiting corrosion.

[0054] In some embodiments of the present invention, the triazole compound with an electron-donating group is selected from at least one of 4-methyl-1H-benzotriazole, 5-methyl-benzotriazole, 5,6-dimethyl-1,2,3-benzotriazole, 1-hydroxybenzotriazole, 3-methyl-1H-1,2,4-triazole, 3-amino-1,2,4-triazole, 4-amino-1,2,4-triazole, and 3,5-diamino-1,2,4-triazole.

[0055] In this invention, the amino alcohol compound is an amino alcohol compound with a straight main chain and ≤8 carbon atoms, which can ensure more effective contact with the wafer surface compared to cyclic amino alcohols.

[0056] In some embodiments of the present invention, the amino alcohol compound is selected from at least one of 2-diethylamino-1-ethanol, 2-dipropylaminoethanol, 2-dimethylamino-2-methyl-1-propanol, 1-dimethylamino-2-propanol, 2-amino-2-methyl-1-propanol, DL-2-amino-1-butanol, 2-amino-2-pentanol, and 3-amino-4-octanol.

[0057] In this invention, the amino acid or amino acid derivative does not contain electron-withdrawing groups. Preferably, the electron-withdrawing groups are carbonyl, acetyl, and ester groups, etc.

[0058] In some embodiments of the present invention, the amino acid or amino acid derivative is selected from at least one of L-arginine, L-proline, methionine, L-serine, creatine, and tris(hydroxymethyl)glycine.

[0059] In this invention, the corrosion inhibitor has a mass percentage content of 0.025~0.3 wt% in the chemical mechanical polishing fluid, preferably 0.025~0.1 wt%.

[0060] In this invention, the pH adjuster is used to adjust the pH value of the mechanical polishing fluid, and includes a pH acid adjuster and a pH base adjuster. The pH acid adjuster includes organic acids and / or inorganic acids, wherein the inorganic acid is selected from at least one of hydrochloric acid, nitric acid, and sulfuric acid, and the organic acid is selected from at least one of succinic acid, malonic acid, tartaric acid, and gluconic acid. The pH base adjuster includes potassium hydroxide and / or sodium hydroxide. In this invention, preferably, the pH value of the chemical mechanical polishing fluid is 3-5, more preferably 3-4.

[0061] In this invention, the polishing accelerator is at least one of sodium nitrate, potassium nitrate, and ammonium nitrate.

[0062] In this invention, the polishing accelerator has a mass percentage content of 0.2-5 wt%, preferably 0.5-2 wt%.

[0063] In some technical solutions of this invention, the chemical mechanical polishing fluid may further include antibacterial agents and / or dispersants, etc. This invention does not impose any particular limitation on the types of antibacterial agents and dispersants, as long as they are well-known to those skilled in the art.

[0064] In this invention, the water is preferably deionized water.

[0065] In some preferred embodiments of the present invention, the chemical mechanical polishing fluid comprises silicon dioxide abrasive particles, hydrogen peroxide, 4-amino-1,2,4-triazole, potassium nitrate, water, and a pH adjuster; Alternatively, the chemical mechanical polishing fluid may comprise silica abrasive particles, hydrogen peroxide, 4-amino-1,2,4-triazole, sodium nitrate, water, and a pH adjuster; Alternatively, the chemical mechanical polishing fluid may comprise silicon dioxide abrasive particles, hydrogen peroxide, 5-methylbenzotriazole, ammonium nitrate, water, and a pH adjuster. Alternatively, the chemical mechanical polishing fluid may comprise silicon dioxide abrasive particles, hydrogen peroxide, methyl-1H-benzotriazole, sodium nitrate, water, and a pH adjuster; Alternatively, the chemical mechanical polishing fluid may comprise silicon dioxide abrasive particles, hydrogen peroxide, methyl-1H-benzotriazole, potassium nitrate, water, and a pH adjuster. Alternatively, the chemical mechanical polishing fluid may comprise silica abrasive particles, hydrogen peroxide, 3-amino-1,2,4-triazole, ammonium nitrate, water, and a pH adjuster; Alternatively, the chemical mechanical polishing fluid may comprise silica abrasive particles, hydrogen peroxide, 3-amino-1,2,4-triazole, sodium nitrate, water, and a pH adjuster; Alternatively, the chemical mechanical polishing fluid may comprise silica abrasive particles, hydrogen peroxide, 1-hydroxybenzotriazole, potassium nitrate, water, and a pH adjuster; Alternatively, the chemical mechanical polishing fluid may comprise silica abrasive particles, hydrogen peroxide, 1-hydroxybenzotriazole, ammonium nitrate, water, and a pH adjuster; Alternatively, the chemical mechanical polishing fluid may comprise silicon dioxide abrasive particles, hydrogen peroxide, L-arginine, ammonium nitrate, water, and a pH adjuster; Alternatively, the chemical mechanical polishing fluid may comprise silicon dioxide abrasive particles, hydrogen peroxide, L-arginine, sodium nitrate, water, and a pH adjuster; Alternatively, the chemical mechanical polishing fluid may comprise silicon dioxide abrasive particles, hydrogen peroxide, L-proline, potassium nitrate, water, and a pH adjuster; Alternatively, the chemical mechanical polishing fluid may comprise silicon dioxide abrasive particles, hydrogen peroxide, L-proline, ammonium nitrate, water, and a pH adjuster; Alternatively, the chemical mechanical polishing fluid may comprise silicon dioxide abrasive particles, hydrogen peroxide, methionine, sodium nitrate, water, and a pH adjuster; Alternatively, the chemical mechanical polishing fluid may comprise silicon dioxide abrasive particles, hydrogen peroxide, methionine, potassium nitrate, water, and a pH adjuster; Alternatively, the chemical mechanical polishing slurry comprises silicon dioxide abrasive particles, hydrogen peroxide, L-serine, ammonium nitrate, water, and a pH adjuster; Alternatively, the chemical mechanical polishing fluid comprises silicon dioxide abrasive particles, hydrogen peroxide, L-serine, sodium nitrate, water, and a pH adjuster; Alternatively, the chemical mechanical polishing fluid may comprise silicon dioxide abrasive particles, hydrogen peroxide, creatine, potassium nitrate, water, and a pH adjuster. Alternatively, the chemical mechanical polishing fluid may comprise silicon dioxide abrasive particles, hydrogen peroxide, creatine, ammonium nitrate, water, and a pH adjuster; Alternatively, the chemical mechanical polishing fluid may comprise silica abrasive particles, hydrogen peroxide, tris(hydroxymethyl)methylglycine, sodium nitrate, water, and a pH adjuster; Alternatively, the chemical mechanical polishing fluid may comprise silica abrasive particles, hydrogen peroxide, tris(hydroxymethyl)methylglycine, potassium nitrate, water, and a pH adjuster; Alternatively, the chemical mechanical polishing fluid may comprise silica abrasive particles, hydrogen peroxide, 2-amino-2-methyl-1-propanol, potassium nitrate, water, and a pH adjuster; Alternatively, the chemical mechanical polishing fluid may comprise silica abrasive particles, hydrogen peroxide, DL-2-amino-1-butanol, sodium nitrate, water, and a pH adjuster; Alternatively, the chemical mechanical polishing fluid may comprise silica abrasive particles, hydrogen peroxide, DL-2-amino-1-butanol, potassium nitrate, water, and a pH adjuster; Alternatively, the chemical mechanical polishing fluid may comprise silica abrasive particles, hydrogen peroxide, 3-amino-4-octanol, ammonium nitrate, water, and a pH adjuster; Alternatively, the chemical mechanical polishing fluid may comprise silica abrasive particles, hydrogen peroxide, 3-amino-4-octanol, sodium nitrate, water, and a pH adjuster; Alternatively, the chemical mechanical polishing fluid may comprise silicon dioxide abrasive particles, hydrogen peroxide, methionine, ammonium nitrate, water, and a pH adjuster; Alternatively, the chemical mechanical polishing fluid may comprise silica abrasive particles, hydrogen peroxide, 2-aminobenzimidazole, sodium nitrate, water, and a pH adjuster; Alternatively, the chemical mechanical polishing fluid may comprise silicon dioxide abrasive particles, hydrogen peroxide, methyl-1H-benzotriazole, ammonium nitrate, water, and a pH adjuster; Alternatively, the chemical mechanical polishing fluid may comprise modified silica abrasive particles, hydrogen peroxide, L-arginine, sodium nitrate, water, and a pH adjuster; Alternatively, the chemical mechanical polishing fluid may comprise modified silica abrasive particles, hydrogen peroxide, 2-amino-2-methyl-1-propanol, potassium nitrate, water, and a pH adjuster; Alternatively, the chemical mechanical polishing fluid may comprise modified silica abrasive particles, hydrogen peroxide, 1-hydroxybenzotriazole, ammonium nitrate, water, and a pH adjuster; Alternatively, the chemical mechanical polishing fluid may comprise silicon dioxide abrasive particles, hydrogen peroxide, creatine, sodium nitrate, water, and a pH adjuster.

[0066] In some specific embodiments of the present invention, the chemical mechanical polishing fluid specifically comprises: 1 wt% silicon dioxide abrasive particles with a particle size of 75 nm, 5 wt% hydrogen peroxide, 0.025 wt% 4-amino-1,2,4-triazole, 1 wt% potassium nitrate, and a pH of 4; or The mixture consisted of 1 wt% silicon dioxide abrasive particles (75 nm in diameter), 5 wt% hydrogen peroxide, 0.1 wt% 4-amino-1,2,4-triazole, and 1 wt% sodium nitrate, with a pH of 4; or The mixture consisted of 1 wt% silicon dioxide abrasive particles (75 nm in diameter), 5 wt% hydrogen peroxide, 0.025 wt% 5-methylbenzotriazole, and 1 wt% ammonium nitrate, with a pH of 4; or The mixture consisted of 1 wt% silicon dioxide abrasive particles (75 nm in diameter), 5 wt% hydrogen peroxide, 0.1 wt% 5-methylbenzotriazole, and 1 wt% ammonium nitrate, with a pH of 4; or The mixture consisted of 1 wt% silicon dioxide abrasive particles (75 nm in diameter), 5 wt% hydrogen peroxide, 0.025 wt% methyl-1H-benzotriazole, and 1 wt% sodium nitrate, with a pH of 4; or The mixture consisted of 1 wt% silicon dioxide abrasive particles (75 nm in diameter), 5 wt% hydrogen peroxide, 0.1 wt% methyl-1H-benzotriazole, and 1 wt% potassium nitrate, with a pH of 4; or The mixture consisted of 1 wt% silicon dioxide abrasive particles (75 nm in diameter), 5 wt% hydrogen peroxide, 0.025 wt% 3-amino-1,2,4-triazole, and 1 wt% ammonium nitrate, with a pH of 4; or The mixture consisted of 1 wt% silicon dioxide abrasive particles (75 nm in diameter), 5 wt% hydrogen peroxide, 0.1 wt% 3-amino-1,2,4-triazole, and 1 wt% sodium nitrate, with a pH of 4; or The mixture consisted of 1 wt% silicon dioxide abrasive particles (75 nm in diameter), 5 wt% hydrogen peroxide, 0.025 wt% 1-hydroxybenzotriazole, and 1 wt% potassium nitrate, with a pH of 4; or The mixture consisted of 1 wt% silicon dioxide abrasive particles (75 nm in diameter), 5 wt% hydrogen peroxide, 0.1 wt% 1-hydroxybenzotriazole, and 1 wt% ammonium nitrate, with a pH of 4; or The mixture consisted of 1 wt% silicon dioxide abrasive particles (75 nm in diameter), 5 wt% hydrogen peroxide, 0.025 wt% L-arginine, 1 wt% ammonium nitrate, and a pH of 4; or The mixture consisted of 1 wt% silicon dioxide abrasive particles with a particle size of 75 nm, 5 wt% hydrogen peroxide, 0.1 wt% L-arginine, 1 wt% sodium nitrate, and a pH of 4; or The mixture consisted of 1 wt% silicon dioxide abrasive particles with a particle size of 75 nm, 5 wt% hydrogen peroxide, 0.025 wt% L-proline, 1 wt% potassium nitrate, and a pH of 4; or The mixture consisted of 1 wt% silicon dioxide abrasive particles with a particle size of 75 nm, 5 wt% hydrogen peroxide, 0.1 wt% L-proline, 1 wt% ammonium nitrate, and a pH of 4; or The mixture consisted of 1 wt% silicon dioxide abrasive particles with a particle size of 75 nm, 5 wt% hydrogen peroxide, 0.025 wt% methionine, and 1 wt% sodium nitrate, with a pH of 4; or The mixture consisted of 1 wt% silicon dioxide abrasive particles (75 nm in diameter), 5 wt% hydrogen peroxide, 0.025 wt% methionine, and 1 wt% potassium nitrate, with a pH of 4; or The mixture consisted of 1 wt% silicon dioxide abrasive particles (75 nm in diameter), 5 wt% hydrogen peroxide, 0.025 wt% L-serine, 1 wt% ammonium nitrate, and a pH of 4; or The mixture consisted of 1 wt% silicon dioxide abrasive particles (75 nm in diameter), 5 wt% hydrogen peroxide, 0.1 wt% L-serine, 1 wt% sodium nitrate, and a pH of 4; or The mixture consisted of 1 wt% silicon dioxide abrasive particles with a particle size of 75 nm, 5 wt% hydrogen peroxide, 0.025 wt% creatine, and 1 wt% potassium nitrate, with a pH of 4; or The mixture consisted of 1 wt% silicon dioxide abrasive particles (75 nm in diameter), 5 wt% hydrogen peroxide, 0.1 wt% creatine, and 1 wt% ammonium nitrate, with a pH of 4; or The mixture consisted of 1 wt% silicon dioxide abrasive particles (75 nm in diameter), 5 wt% hydrogen peroxide, 0.025 wt% tris(hydroxymethyl)methylglycine, and 1 wt% sodium nitrate, with a pH of 4; or The mixture consisted of 1 wt% silicon dioxide abrasive particles (75 nm in diameter), 5 wt% hydrogen peroxide, 0.1 wt% tris(hydroxymethyl)methylglycine, and 1 wt% potassium nitrate, with a pH of 4; or The mixture consisted of 1 wt% silicon dioxide abrasive particles (75 nm in diameter), 5 wt% hydrogen peroxide, 0.025 wt% 2-amino-2-methyl-1-propanol, and 1 wt% potassium nitrate, with a pH of 4; or The mixture consisted of 1 wt% silicon dioxide abrasive particles (75 nm in diameter), 5 wt% hydrogen peroxide, 0.1 wt% 2-amino-2-methyl-1-propanol, and 1 wt% potassium nitrate, with a pH of 4; or The mixture consisted of 1 wt% silicon dioxide abrasive particles with a particle size of 75 nm, 5 wt% hydrogen peroxide, 0.025 wt% DL-2-amino-1-butanol, and 1 wt% sodium nitrate, with a pH of 4; or The mixture consisted of 1 wt% silicon dioxide abrasive particles with a particle size of 75 nm, 5 wt% hydrogen peroxide, 0.1 wt% DL-2-amino-1-butanol, and 1 wt% potassium nitrate, with a pH of 4; or The mixture consisted of 1 wt% silicon dioxide abrasive particles with a particle size of 75 nm, 5 wt% hydrogen peroxide, 0.025 wt% 3-amino-4-octanol, and 1 wt% ammonium nitrate, with a pH of 4; or The mixture consisted of 1 wt% silicon dioxide abrasive particles (75 nm in diameter), 5 wt% hydrogen peroxide, 0.1 wt% 3-amino-4-octanol, and 1 wt% sodium nitrate, with a pH of 4; or The mixture consisted of 20 wt% silicon dioxide abrasive particles (75 nm in diameter), 5 wt% hydrogen peroxide, 0.025 wt% 3-amino-1,2,4-triazole, and 1 wt% ammonium nitrate, with a pH of 4; or 20 wt% silicon dioxide abrasive particles (75 nm diameter), 5 wt% hydrogen peroxide, 0.025 wt% methionine, 0.8 wt% ammonium nitrate, pH 4; or The mixture consisted of 10 wt% silicon dioxide abrasive particles (75 nm in diameter), 5 wt% hydrogen peroxide, 0.1 wt% 5-methylbenzotriazole, and 1.2 wt% sodium nitrate, with a pH of 4; or 20 wt% silicon dioxide abrasive particles (75 nm diameter), 5 wt% hydrogen peroxide, 0.1 wt% 2-amino-2-methyl-1-propanol, 1 wt% potassium nitrate, pH 4; or The mixture consisted of 10 wt% silicon dioxide abrasive particles (75 nm in diameter), 5 wt% hydrogen peroxide, 0.1 wt% L-arginine, 1.2 wt% sodium nitrate, and a pH of 4; or The mixture consisted of 5 wt% silicon dioxide abrasive particles (75 nm in diameter), 5 wt% hydrogen peroxide, 0.1 wt% 2-amino-2-methyl-1-propanol, and 1 wt% potassium nitrate, with a pH of 4; or The mixture consisted of 5 wt% silicon dioxide abrasive particles (75 nm in diameter), 5 wt% hydrogen peroxide, 0.025 wt% methyl-1H-benzotriazole, and 0.8 wt% ammonium nitrate, with a pH of 4; or The mixture consisted of 5 wt% modified silica abrasive particles (75 nm in diameter), 5 wt% hydrogen peroxide, 0.025 wt% L-arginine, and 1.2 wt% sodium nitrate, with a pH of 4; or The mixture consisted of 5 wt% silicon dioxide abrasive particles (75 nm in diameter), 5 wt% hydrogen peroxide, 0.1 wt% 2-amino-2-methyl-1-propanol, and 1 wt% potassium nitrate, with a pH of 4; or The mixture consisted of 5 wt% modified silica abrasive particles (75 nm in diameter), 5 wt% hydrogen peroxide, 0.1 wt% 2-amino-2-methyl-1-propanol, and 1 wt% potassium nitrate, with a pH of 4; or The mixture consisted of 1 wt% silicon dioxide abrasive particles (75 nm in diameter), 5 wt% hydrogen peroxide, 0.1 wt% DL-2-amino-1-butanol, and 1.2 wt% sodium nitrate, with a pH of 4; or The mixture consisted of 1 wt% modified silica abrasive particles (75 nm in diameter), 5 wt% hydrogen peroxide, 0.1 wt% 1-hydroxybenzotriazole, and 1.4 wt% ammonium nitrate, with a pH of 4; or The mixture consisted of 1 wt% silicon dioxide abrasive particles with a particle size of 75 nm, 5 wt% hydrogen peroxide, 0.025 wt% creatine, 1 wt% sodium nitrate, and a pH of 4.

[0067] In the above chemical mechanical polishing fluid formulation, after determining the dosage of each component and obtaining the target pH, the remainder is water.

[0068] This invention also provides a method for preparing a chemical mechanical polishing slurry, such as by the following method: After the abrasive particles, oxidant, corrosion inhibitor, polishing accelerator and water are mixed evenly, the pH value is adjusted to the target value using a pH adjuster to obtain a chemical mechanical polishing slurry.

[0069] Preferably, deionized water and all other ingredients except the grinding particles and pH adjuster are first added to the container and stirred thoroughly. Then, a certain amount of grinding particles are added, stirred thoroughly, and the pH is adjusted to the desired value using a pH adjuster.

[0070] The chemical polishing slurry provided by this invention can be applied to the polishing of gallium arsenide wafers. Preferably, the polishing parameters are as follows: downward pressure of 6.0 psi, flow rate of 100 mL / min, polishing disc rotation speed of 50 rpm, polishing head rotation speed of 60 rpm, polishing time of 30 minutes, and the polishing slurry is recycled. The polishing pad is Suba 400.

[0071] Testing revealed that the described chemical mechanical polishing slurry effectively inhibits the corrosion of gallium arsenide wafers and achieves excellent polishing results. The gallium arsenide removal rate can reach 10,000 Å / min or higher, the post-polishing surface roughness can be as low as 0.32 nm, and the static corrosion rate can be as low as 125.31 Å / min. Furthermore, the polishing slurry provided by this invention maintains a removal rate of over 80% even when the abrasive particle concentration is reduced from 20 wt% to 1 wt%, meeting most process requirements while saving costs. In addition, the abrasive particle content in the polishing slurry of this invention can be as low as 1 wt%, saving approximately 90% of the cost, and significantly reducing particle residue on the post-polishing surface, thereby reducing surface contaminants.

[0072] In summary, this invention proposes a chemical mechanical polishing slurry suitable for gallium arsenide wafers, which achieves high polishing rate and good surface roughness while having low static corrosion rate and low production cost, thus realizing efficient and stable polishing of gallium arsenide wafers.

[0073] To further illustrate the present invention, detailed descriptions are provided below through the following embodiments. The experimental materials used in the following embodiments of the present invention are commercially available products.

[0074] Static etch rate (SER): The chemical mechanical polishing slurry of the following comparative examples and embodiments was placed in a 50°C water bath, and the wafer was immersed in the slurry for 30 minutes. The wafer surface was in good condition before the static etch rate test.

[0075] Surface roughness (Ra) was measured using a Nanosurf Alphacen 300 Flex atomic force microscope. Material removal rate (MRR) was calculated by weighing the wafer's mass (m1, m2) before and after polishing using a precision electronic balance, and then using the following formula: MRR=(m1–m2) / (ρ×A×t);

[0076] Where m1 is the mass of the wafer before polishing, m2 is the mass of the wafer after polishing, ρ is the density of the gallium arsenide wafer, 5.32 g / cm2; A is the area of ​​the gallium arsenide wafer, 4 cm2 (4 square wafers of 1 cm each); t is the polishing time, 30 minutes.

[0077] The zeta potential was measured using the zeta potential module on the Nicomp 3000 series nanolaser particle size analyzer, and the particle size of the ground particles was measured using a CPS disc centrifugal nanoparticle size analyzer.

[0078] The modified SiO2 involved in the following examples was prepared according to the following method: 750 g of silica sol was weighed into a container and stirred continuously. Then, 5 g of 3-aminopropyltrimethoxysilane was dissolved in an appropriate amount of methanol and slowly added dropwise into the container, completing the process within 30 minutes. Stirring was then continued for 20 minutes. 10 g of the sample was taken, the pH was adjusted to 4.0, and the zeta potential was tested. The zeta potential was found to be 48.6 mV, which is greater than 30 mV, indicating successful modification. [Example] [1~41]

[0079] The formulations of the chemical mechanical polishing slurries in Examples 1-41 are shown in Table 1-1 (Examples 1-8) and Table 1-2 (Examples 9-41):

[0080] [Table 1-1] Group grinding particles Oxidizing agent Corrosion inhibitors Polishing accelerator pH value Ingredients and Particle size wt% type wt% type wt% type wt% Example 1 SiO2 75nm 1 hydrogen peroxide 5 4-Amino-1,2,4-triazole 0.025 potassium nitrate 1 4 Example 2 SiO2 75nm 1 hydrogen peroxide 5 4-Amino-1,2,4-triazole 0.1 Sodium nitrate 1 4 Example 3 SiO2 75nm 1 hydrogen peroxide 5 5-Methylbenzotriazole 0.025 ammonium nitrate 1 4 Example 4 SiO2 75nm 1 hydrogen peroxide 5 5-Methylbenzotriazole 0.1 ammonium nitrate 1 4 Example 5 SiO2 75nm 1 hydrogen peroxide 5 Methyl-1H-benzotriazole 0.025 Sodium nitrate 1 4 Example 6 SiO2 75nm 1 hydrogen peroxide 5 Methyl-1H-benzotriazole 0.1 potassium nitrate 1 4 Example 7 SiO2 75nm 1 hydrogen peroxide 5 3-Amino-1,2,4-triazole 0.025 ammonium nitrate 1 4 Example 8 SiO2 75nm 1 hydrogen peroxide 5 3-Amino-1,2,4-triazole 0.1 Sodium nitrate 1 4

[0081] [Table 1-2] Group grinding particles Oxidizing agent Corrosion inhibitors Polishing accelerator pH value Ingredients and Particle size wt% type wt% type wt% type wt% Example 9 SiO2 75nm 1 hydrogen peroxide 5 1-Hydroxybenzotriazole 0.025 potassium nitrate 1 4 Example 10 SiO2 75nm 1 hydrogen peroxide 5 1-Hydroxybenzotriazole 0.1 ammonium nitrate 1 4 Example 11 SiO2 75nm 1 hydrogen peroxide 5 L-arginine 0.025 ammonium nitrate 1 4 Example 12 SiO2 75nm 1 hydrogen peroxide 5 L-arginine 0.1 Sodium nitrate 1 4 Example 13 SiO2 75nm 1 hydrogen peroxide 5 L-proline 0.025 potassium nitrate 1 4 Example 14 SiO2 75nm 1 hydrogen peroxide 5 L-proline 0.1 ammonium nitrate 1 4 Example 15 SiO2 75nm 1 hydrogen peroxide 5 Methionine 0.025 Sodium nitrate 1 4 Example 16 SiO2 75nm 1 hydrogen peroxide 5 Methionine 0.1 potassium nitrate 1 4 Example 17 SiO2 75nm 1 hydrogen peroxide 5 L-serine 0.025 ammonium nitrate 1 4 Example 18 SiO2 75nm 1 hydrogen peroxide 5 L-serine 0.1 Sodium nitrate 1 4 Example 19 SiO2 75nm 1 hydrogen peroxide 5 Creatine 0.025 potassium nitrate 1 4 Example 20 SiO2 75nm 1 hydrogen peroxide 5 Creatine 0.1 ammonium nitrate 1 4 Example 21 SiO2 75nm 1 hydrogen peroxide 5 Tris(hydroxymethyl)methylglycine 0.025 Sodium nitrate 1 4 Example 22 SiO2 75nm 1 hydrogen peroxide 5 Tris(hydroxymethyl)methylglycine 0.1 potassium nitrate 1 4 Example 23 SiO2 75nm 1 hydrogen peroxide 5 2-Amino-2-methyl-1-propanol 0.025 potassium nitrate 1 4 Example 24 SiO2 75nm 1 hydrogen peroxide 5 2-Amino-2-methyl-1-propanol 0.1 potassium nitrate 1 4 Example 25 SiO2 75nm 1 hydrogen peroxide 5 DL-2-amino-1-butanol 0.025 Sodium nitrate 1 4 Example 26 SiO2 75nm 1 hydrogen peroxide 5 DL-2-amino-1-butanol 0.1 potassium nitrate 1 4 Example 27 SiO2 75nm 1 hydrogen peroxide 5 3-Amino-4-octanol 0.025 ammonium nitrate 1 4 Example 28 SiO2 75nm 1 hydrogen peroxide 5 3-Amino-4-octanol 0.1 Sodium nitrate 1 4 Example 29 SiO2 75nm 20 hydrogen peroxide 5 3-Amino-1,2,4-triazole 0.025 ammonium nitrate 1 4 Example 30 SiO2 75nm 20 hydrogen peroxide 5 Methionine 0.025 ammonium nitrate 0.8 4 Example 31 SiO2 75nm 10 hydrogen peroxide 5 5-Methylbenzotriazole 0.1 Sodium nitrate 1.2 4 Example 32 SiO2 75nm 20 hydrogen peroxide 5 2-Amino-2-methyl-1-propanol 0.1 potassium nitrate 1 4 Example 33 SiO2 75nm 10 hydrogen peroxide 5 L-arginine 0.1 Sodium nitrate 1.2 4 Example 34 SiO2 75nm 5 hydrogen peroxide 5 2-Amino-2-methyl-1-propanol 0.1 potassium nitrate 1 4 Example 35 SiO2 75nm 5 hydrogen peroxide 5 Methyl-1H-benzotriazole 0.025 ammonium nitrate 0.8 4 Example 36 Modified SiO2 75nm 5 hydrogen peroxide 5 L-arginine 0.025 Sodium nitrate 1.2 4 Example 37 SiO2 75nm 5 hydrogen peroxide 5 2-Amino-2-methyl-1-propanol 0.1 potassium nitrate 1 4 Example 38 Modified SiO2 75nm 5 hydrogen peroxide 5 2-Amino-2-methyl-1-propanol 0.1 potassium nitrate 1 4 Example 39 SiO2 75nm 1 hydrogen peroxide 5 DL-2-amino-1-butanol 0.1 Sodium nitrate 1.2 4 Example 40 Modified SiO2 75nm 1 hydrogen peroxide 5 1-Hydroxybenzotriazole 0.1 ammonium nitrate 1.4 4 Example 41 SiO2 75nm 1 hydrogen peroxide 5 Creatine 0.025 Sodium nitrate 1 4

[0082] The specific preparation method is as follows: Mix various materials evenly with water according to the proportion, adjust the pH value to a suitable value with a pH adjuster, and let it stand for 30 minutes to obtain a polishing liquid, stirring continuously during the process. [Comparative Example] [1~40]

[0083] The formulations of the chemical mechanical polishing slurries for Comparative Examples 1-40 are shown in Table 2, and the preparation methods are the same as those for Examples 1-41.

[0084] [Table 2] Group grinding particles Oxidizing agent Corrosion inhibitors Polishing accelerator pH value Composition and particle size wt% type wt% type wt% type wt% Comparative Example 1 SiO2 75nm 10 hydrogen peroxide 1 - - potassium nitrate 1 4 Comparative Example 2 SiO2 75nm 10 hydrogen peroxide 1 - - Sodium nitrate 1 5 Comparative Example 3 SiO2 75nm 10 hydrogen peroxide 1 - - ammonium nitrate 1 6 Comparative Example 4 SiO2 75nm 10 hydrogen peroxide 1 - - ammonium nitrate 1 8 Comparative Example 5 SiO2 75nm 10 hydrogen peroxide 1 - - Sodium nitrate 1 10 Comparative Example 6 SiO2 75nm 10 hydrogen peroxide 1 - - potassium nitrate 1 12 Comparative Example 7 SiO2 75nm 10 hydrogen peroxide 2 - - ammonium nitrate 1 4 Comparative Example 8 SiO2 75nm 10 hydrogen peroxide 2 - - Sodium nitrate 1 5 Comparative Example 9 SiO2 75nm 10 hydrogen peroxide 0.05 - - Sodium nitrate 1 10 Comparative Example 10 SiO2 75nm 10 hydrogen peroxide 0.1 - - ammonium nitrate 1 10 Comparative Example 11 SiO2 75nm 10 hydrogen peroxide 0.2 - - potassium nitrate 1 10 Comparative Example 12 SiO2 75nm 10 hydrogen peroxide 0.5 - - ammonium nitrate 1 10 Comparative Example 13 SiO2 75nm 10 Sodium hypochlorite 0.2 - - Sodium nitrate 1 10 Comparative Example 14 SiO2 75nm 10 Sodium hypochlorite 1 - - ammonium nitrate 1 10 Comparative Example 15 SiO2 75nm 10 Sodium hypochlorite 3 - - Sodium nitrate 1 10 Comparative Example 16 SiO2 75nm 10 hydrogen peroxide 5 - - Sodium nitrate 1 4 Comparative Example 17 SiO2 75nm 1 hydrogen peroxide 5 benzotriazole 0.025 potassium nitrate 1 4 Comparative Example 18 SiO2 75nm 1 hydrogen peroxide 5 benzotriazole 0.1 ammonium nitrate 1 4 Comparative Example 19 SiO2 75nm 1 hydrogen peroxide 5 1,2,4-Triazole 0.025 Sodium nitrate 1 4 Comparative Example 20 SiO2 75nm 1 hydrogen peroxide 5 1,2,4-Triazole 0.1 potassium nitrate 1 4 Comparative Example 21 SiO2 75nm 1 hydrogen peroxide 5 5-Aminotetrazole 0.025 ammonium nitrate 1 4 Comparative Example 22 SiO2 75nm 1 hydrogen peroxide 5 5-Aminotetrazole 0.1 Sodium nitrate 1 4 Comparative Example 23 SiO2 75nm 1 hydrogen peroxide 5 5-Mercapto-1-phenyl-tetrazole 0.025 potassium nitrate 1 4 Comparative Example 24 SiO2 75nm 1 hydrogen peroxide 5 5-Mercapto-1-phenyl-tetrazole 0.1 ammonium nitrate 1 4 Comparative Example 25 SiO2 75nm 1 hydrogen peroxide 5 OTS-106A Alkylimidazol 0.025 Sodium nitrate 1 4 Comparative Example 26 SiO2 75nm 1 hydrogen peroxide 5 OTS-106A Alkylimidazol 0.1 potassium nitrate 1 4 Comparative Example 27 SiO2 75nm 1 hydrogen peroxide 5 1-Butyl-2,3-dimethylimidazolium chloride 0.025 ammonium nitrate 1 4 Comparative Example 28 SiO2 75nm 1 hydrogen peroxide 5 1-Butyl-2,3-dimethylimidazolium chloride 0.1 Sodium nitrate 1 4 Comparative Example 29 SiO2 75nm 1 hydrogen peroxide 5 1-Benzyl-3-methylimidazolium chloride 0.025 potassium nitrate 1 4 Comparative Example 30 SiO2 75nm 1 hydrogen peroxide 5 1-Benzyl-3-methylimidazolium chloride 0.1 ammonium nitrate 1 4 Comparative Example 31 SiO2 75nm 1 hydrogen peroxide 5 Ta-da (pyridazine) 0.025 Sodium nitrate 1 4 Comparative Example 32 SiO2 75nm 1 hydrogen peroxide 5 Ta-da (pyridazine) 0.1 potassium nitrate 1 4 Comparative Example 33 SiO2 75nm 1 hydrogen peroxide 5 Sodium salt of acetylsinoprotein 0.025 Sodium nitrate 1 4 Comparative Example 34 SiO2 75nm 1 hydrogen peroxide 5 Sodium salt of acetylsinoprotein 0.1 ammonium nitrate 1 4 Comparative Example 35 SiO2 75nm 1 hydrogen peroxide 5 Glutamic acid 0.025 Sodium nitrate 1 4 Comparative Example 36 SiO2 75nm 1 hydrogen peroxide 5 glutamic acid 0.1 potassium nitrate 1 4 Comparative Example 37 SiO2 75nm 1 hydrogen peroxide 5 2-Amino-2-methyl-1-propanol 0.1 potassium nitrate 0.1 4 Comparative Example 38 SiO2 75nm 1 - - 2-Amino-2-methyl-1-propanol 0.1 potassium nitrate 1 4 Comparative Example 39 SiO2 75nm 1 hydrogen peroxide 5 2-Amino-2-methyl-1-propanol 0.1 - - 4 Comparative Example 40 SiO2 75nm 1 hydrogen peroxide 5 2-Amino-2-methyl-1-propanol 0.025 Ferric nitrate 0.1 4

[0085] The corrosion test results and polishing results of the above-mentioned embodiments and comparative examples are shown in Table 3-1 (Comparative Examples 1-25) and Table 3-2 (Comparative Examples 26-40 and Examples 1-29, Example 32, Example 33, Example 36-38, Example 40-41):

[0086] [Table 3-1] Group Gallium arsenide wafer corrosion state Gallium arsenide static Corrosion rate SER (Å / min) Gallium arsenide removal rate (Å / min) Surface roughness Ra (nm) Comparative Example 1 Mirror finish - < 500 4.8 Comparative Example 2 Mirror finish - < 500 8.5 Comparative Example 3 Blackened and burnt - - - Comparative Example 4 Blackened and burnt - - - Comparative Example 5 Blackened and burnt - - - Comparative Example 6 Blackened and burnt - < 500 1.5 Comparative Example 7 Blackened and burnt - - - Comparative Example 8 Blackened and burnt - - - Comparative Example 9 Mirror finish - - - Comparative Example 10 Blackened and burnt - - - Comparative Example 11 Blackened and burnt - - - Comparative Example 12 Blackened and burnt - - - Comparative Example 13 Blackened and burnt - - - Comparative Example 14 Blackened and burnt - - - Comparative Example 15 Blackened and burnt - - - Comparative Example 16 Blackened and burnt 362.75 - - Comparative Example 17 Blackened and burnt 579.96 - - Comparative Example 18 Blackened and burnt 397.82 - - Comparative Example 19 Blackened and burnt 760.01 - - Comparative Example 20 Blackened and burnt 573.12 - - Comparative Example 21 Blackened and burnt 452.51 - - Comparative Example 22 Blackened and burnt 418.33 - - Comparative Example 23 Blackened and burnt 478.82 - - Comparative Example 24 Blackened and burnt 422.23 - - Comparative Example 25 Blackened and burnt 544.45 - -

[0087] [Table 3-2] Group Gallium arsenide wafer corrosion state Gallium arsenide static Corrosion rate SER (Å / min) Gallium arsenide removal rate (Å / min) Surface roughness Ra (nm) Comparative Example 26 Blackened and burnt 589.62 - - Comparative Example 27 Blackened and burnt 626.57 - - Comparative Example 28 Blackened and burnt 532.43 - - Comparative Example 29 Blackened and burnt 661.22 - - Comparative Example 30 Blackened and burnt 402.79 - - Comparative Example 31 Blackened and burnt 399.26 - - Comparative Example 32 Blackened and burnt 423.23 - - Comparative Example 33 Blackened and burnt 760.83 - - Comparative Example 34 Blackened and burnt 481.97 - - Comparative Example 35 Blackened and burnt 587.41 - - Comparative Example 36 Blackened and burnt 402.97 - - Comparative Example 37 Mirror finish - 6140 0.83 Comparative Example 38 Mirror finish - 4560.7 1.81 Comparative Example 39 Mirror finish - 2566.7 4.25 Comparative Example 40 Mirror finish - 4910.6 3.52 Example 1 Mirror finish 156.64 - - Example 2 Mirror finish 250.63 - - Example 3 Mirror finish 156.63 - - Example 4 Mirror finish 234.96 - - Example 5 Mirror finish 208.85 - - Example 6 Mirror finish 250.63 - - Example 7 Mirror finish 156.64 - - Example 8 Mirror finish 217.56 - - Example 9 Mirror finish 263.82 - - Example 10 Mirror finish 174.04 - - Example 11 Mirror finish 232.06 - - Example 12 Mirror finish 208.85 - - Example 13 Mirror finish 250.62 - - Example 14 Mirror finish 291.33 - - Example 15 Mirror finish 351.26 - - Example 16 Mirror finish 302.44 - - Example 17 Mirror finish 336.7 - - Example 18 Mirror finish 231.91 - - Example 19 Mirror finish 309.95 - - Example 20 Mirror finish 283.47 - - Example 21 Mirror finish 221.01 - - Example 22 Mirror finish 261.07 - - Example 23 Mirror finish 125.31 - - Example 24 Mirror finish 125.31 8330 0.59 Example 25 Mirror finish 187.97 - - Example 26 Mirror finish 204.76 - - Example 27 Mirror finish 314.28 - - Example 28 Mirror finish 298.36 - - Example 29 Mirror finish 156.64 11038 0.44 Example 32 Mirror finish 125.31 11200 0.32 Example 33 Mirror finish 208.85 10346 0.53 Example 36 Mirror finish 232.06 8633 0.49 Example 37 Mirror finish 125.31 8960 0.41 Example 38 Mirror finish 125.31 8560 0.57 Example 40 Mirror finish 174.04 8299 0.61 Example 41 Mirror finish 309.95 8326 0.52

[0088] The results of Comparative Examples 1-8 show that, with the addition of 1 wt% hydrogen peroxide, gallium arsenide wafers do not corrode only under acidic and weakly acidic conditions. Under alkaline conditions, the surface and back surface corrosion generated during polishing is difficult to remove through the CMP process, significantly impacting subsequent processes or leading to wafer scrap due to irreversible corrosion (see Figure 1). In Comparative Example 6, although back surface corrosion occurred during gallium arsenide polishing, the surface roughness was significantly reduced (see Figure 4). The results of Comparative Examples 9-15 show that, under alkaline conditions, only hydrogen peroxide concentrations below 0.05 wt% prevent gallium arsenide wafer corrosion, but at this concentration, the oxidant concentration is low, and the chemical effect is weak. Similarly, adding different concentrations of sodium hypochlorite under alkaline conditions also leads to gallium arsenide wafer corrosion.

[0089] Before polishing, the surface roughness of gallium arsenide wafers is tens or even hundreds of nanometers, with very poor planarization (see Figure 3). In Comparative Example 1, the addition of 1 wt% hydrogen peroxide resulted in a noticeable hazy appearance of the gallium arsenide surface after polishing due to the imbalance between chemical and mechanical forces. Furthermore, the removal rates of gallium arsenide after polishing using the above comparative examples were all low and could not meet the requirements, necessitating further enhancement of the chemical force.

[0090] In summary, the following examples still use acidic polishing slurry to screen corrosion inhibitors in gallium arsenide polishing.

[0091] Under acidic conditions, adding higher concentrations of hydrogen peroxide followed by 250–1000 ppm of unbranched triazole compounds (Comparative Examples 17–20) did not inhibit the SER value. Similarly, tetrazolium, imidazoles, and pyridazine (six-membered ring) reagents, even with electron-donating groups such as amines and thiol groups, could not inhibit the corrosion of gallium arsenide wafers (Comparative Examples 21–32). However, adding 250–1000 ppm of triazole compounds with electron-donating groups (such as amines, methyl groups, and hydroxyl groups) (Examples 1–10) effectively inhibited the corrosion of gallium arsenide wafers, as shown in Figure 5.

[0092] When the addition amount is 250~1000 ppm, if the amino acid used has electron-withdrawing groups (such as carbonyl, acetyl, and ester groups), a higher SER value is obtained (Comparative Examples 33~36), which cannot inhibit the corrosion effect; however, when the amino acid used has electron-donating groups (such as amino, methyl, hydroxy, methylthio, and hydroxymethyl groups), the corrosion of the wafer can be inhibited (Examples 11~22). At the same time, the effect of the above compounds is also enhanced when the concentration of amino acid is increased, as shown in Figure 6.

[0093] In this invention, amino alcohols, acting as corrosion inhibitors, contain electron-donating amino groups in their structural formulas, which can significantly reduce corrosion. Regardless of concentration, amino alcohols with shorter main carbon chains significantly reduce the SER value of GaAs under acidic conditions, allowing for a smoother, mirror-like surface finish under polishing conditions. When the carbon chains of these compounds become longer, the corrosion inhibition effect decreases, as shown in Figure 7.

[0094] The only difference between Comparative Example 37 and Comparative Example 40 is the type of polishing accelerator. Comparative Example 40 uses ferric nitrate as a polishing accelerator, which results in a lower removal rate and higher surface roughness. This indicates that when the cation in nitrate is a metal ion with strong oxidizing properties, it is not suitable for polishing gallium arsenide.

[0095] Comparative Example 38, without oxidant but containing 1 wt% potassium nitrate polishing accelerator, achieved a gallium arsenide removal rate of 4560.7 Å / min and a surface roughness of 1.81 nm; Comparative Example 39, containing oxidant but without polishing accelerator, achieved a gallium arsenide removal rate of 2566.7 Å / min and a surface roughness of 4.25 nm; Example 24, containing both oxidant and 1 wt% potassium nitrate polishing accelerator, achieved a gallium arsenide removal rate of 8330 Å / min, showing a significant improvement, and a surface roughness of 0.59 nm (see Figure 11), showing a marked improvement. This demonstrates that oxidant and polishing accelerator exhibit a synergistic effect in improving the gallium arsenide removal rate and surface roughness.

[0096] The difference between Comparative Example 37 and Comparative Example 39 lies in the presence or absence of a polishing accelerator. Compared to Comparative Example 39, the gallium arsenide removal rate of Comparative Example 37 increased from 2566.7 Å / min to 6140 Å / min, but the surface roughness was still relatively high, possibly because it did not achieve a uniform thickness removal effect.

[0097] The only difference between Comparative Example 37 and Example 24 is the content of the polishing accelerator potassium nitrate. In Comparative Example 37, the amount of potassium nitrate added was 0.1 wt%, while in Example 24, the amount of polishing accelerator added was 1 wt%. The gallium arsenide removal rate was increased to 8330 Å / min, while the surface roughness remained at a low level.

[0098] Comparative Example 39, containing an oxidant but without a polishing accelerator, achieved a gallium arsenide removal rate of 2566.7 Å / min and a surface roughness of 4.25 nm. Comparative Example 38, without an oxidant but containing 1 wt% potassium nitrate as a polishing accelerator, achieved a gallium arsenide removal rate of 4560.7 Å / min and a surface roughness of 1.81 nm. Example 24, containing both an oxidant and 1 wt% potassium nitrate as a polishing accelerator, achieved a gallium arsenide removal rate of 8330 Å / min, showing a significant improvement, and a surface roughness of 0.59 nm, showing a marked improvement. Therefore, it can be seen that the oxidant and polishing accelerator exhibit a synergistic effect in improving the gallium arsenide removal rate and surface roughness.

[0099] In Examples 24 and 40, the SiO2 content was reduced to 1 wt%, yet a high material removal rate was still maintained even with the presence of an oxidant and a polishing accelerator. In Examples 29 and 32, with the presence of an oxidant and a polishing accelerator, the SiO2 content was increased to 20 wt%, resulting in material removal rates of 11038 Å / min and 11200 Å / min, respectively. Furthermore, the use of any corrosion inhibitor screened in Examples 1 to 28 within a concentration range of 0.025 to 0.1 wt% did not affect the removal rate.

[0100] In summary, adding sodium nitrate, potassium nitrate, or ammonium nitrate as polishing accelerators to oxidant-containing polishing slurries can have a synergistic effect, significantly improving the removal rate of gallium arsenide and reducing surface roughness. The high ion concentration of these accelerators compresses the electric double layer of the abrasive particles to some extent, resulting in stronger electrostatic adsorption between the surface charge of the abrasive particles and the charge on the gallium arsenide surface, thus increasing the material removal rate. However, the increased ionic strength from the addition of polishing accelerators also negatively impacts the stability of the polishing slurry. Higher ionic strength in the slurry leads to stronger shielding of the particle surface potential, resulting in a decrease in the zeta potential of the abrasive particles and consequently reducing the shelf life of the polishing slurry.

[0101] Therefore, this invention uses 3-aminopropyltrimethoxysilane to modify silica sol. In Examples 36, 38, and 40, the modified SiO2 abrasive particles exhibited a zeta potential of 46.8 mV at pH 3, indicating a highly stable state. After being placed in a 55°C oven for 28 days (approximately 224 days at room temperature), the particle size did not increase further (see Figure 12), and the polishing performance remained unchanged. In contrast, Example 37 could only be stored at room temperature for about 50 days, demonstrating that modified abrasive particles can further extend the shelf life of the polishing solution without reducing the gallium arsenide removal rate. However, in this invention, after modifying the silica sol with 3-(2-aminoethylamino)propylmethyldimethoxysilane and adjusting the pH to acidic, the silica sol agglomerated and became unusable.

[0102] The polishing slurry provided by this invention can achieve a removal rate of over 8000 Å / min and a mirror-like finish (see Figure 2) with low surface roughness when used for polishing gallium arsenide. When the concentration of abrasive particles is further reduced from 20 wt% to 1 wt%, nearly 90% of the cost can be saved while still maintaining a removal rate of over 80%, thus meeting most process requirements while saving costs.

[0103] Furthermore, in Examples 32, 37, and 38, good surface roughness of 0.32 nm, 0.47 nm, and 0.57 nm, respectively, was also obtained when using higher concentrations or modified abrasive particles (see Figures 8, 9, and 10).

[0104] The above description of the disclosed embodiments enables those skilled in the art to make or use the invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the invention. Therefore, the invention is not to be limited to the embodiments shown herein, but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

[0105] none.

Claims

1. A chemical mechanical polishing slurry, comprising: Abrasive particles, oxidant, corrosion inhibitor, pH adjuster, polishing accelerator, and water; The corrosion inhibitor is selected from at least one of nitrogen-containing five-membered heterocyclic compounds, amino alcohol compounds, and amino acids or amino acid derivatives; the nitrogen-containing five-membered heterocyclic compound has ≥3 N atoms; the nitrogen-containing five-membered heterocyclic compound is a triazole compound with an electron-donating group, the electron-donating group including any one or more of amino, methyl, and hydroxyl groups; the amino alcohol compound has a straight main chain and ≤8 carbon atoms; the amino acid or amino acid derivative does not contain electron-withdrawing groups, the electron-withdrawing groups including any one or more of carbonyl, acetyl, and ester groups; the pH value of the chemical mechanical polishing slurry is 3-5; the polishing accelerator includes at least one of sodium nitrate, potassium nitrate, and ammonium nitrate; and the mass percentage of the polishing accelerator in the chemical mechanical polishing slurry is 0.2-5 wt%.

2. The chemical mechanical polishing slurry as described in claim 1, wherein, The grinding particles are selected from at least one of modified silica, silica sol, fumed silica, alumina and cerium oxide, and the particle size of the grinding particles is 20~200 nm; and / or, the oxidant is a peroxide, and the peroxide includes at least one of hydrogen peroxide, sodium peroxide, ammonium persulfate and peracetic acid.

3. The chemical mechanical polishing slurry as described in claim 2, wherein, The modified silicon dioxide has a zeta potential >30 mV under acidic conditions; and / or, the triazole compound with an electron-donating group is selected from at least one of 4-methyl-1H-benzotriazole, 5-methyl-benzotriazole, 5,6-dimethyl-1,2,3-benzotriazole, 1-hydroxybenzotriazole, 3-methyl-1H-1,2,4-triazole, 3-amino-1,2,4-triazole, 4-amino-1,2,4-triazole, and 3,5-diamino-1,2,4-triazole; And / or, the amino alcohol compound is selected from at least one of 2-diethylamino-1-ethanol, 2-dipropylaminoethanol, 2-dimethylamino-2-methyl-1-propanol, 1-dimethylamino-2-propanol, 2-amino-2-methyl-1-propanol, DL-2-amino-1-butanol, 2-amino-2-pentanol, and 3-amino-4-octanol; and / or, the amino acid is selected from at least one of L-arginine, L-proline, methionine, L-serine, and creatine; and / or, the amino acid derivative is selected from tris(hydroxymethyl)methylglycine. And / or, the pH adjuster includes a pH acid adjuster or a pH base adjuster, the pH acid adjuster includes an organic acid and / or an inorganic acid, the inorganic acid is selected from at least one of hydrochloric acid, nitric acid and sulfuric acid, the organic acid is selected from at least one of succinic acid, malonic acid, tartaric acid and gluconic acid, and the pH base adjuster includes potassium hydroxide and / or sodium hydroxide.

4. The chemical mechanical polishing slurry as described in claim 3, wherein, The modified silica is obtained by modifying silica with a silane reagent, and the modified silica has a zeta potential > 30 mV under acidic conditions; the silane reagent is 3-aminopropyltrimethoxysilane; the mass ratio of silica to silane reagent is (750~1000):

5.

5. The chemical mechanical polishing slurry as described in claim 1, wherein, The chemical mechanical polishing fluid further includes additives, including antibacterial agents and / or dispersants.

6. The chemical mechanical polishing slurry as described in claim 1, wherein, The abrasive particles in the chemical mechanical polishing slurry contain 0.5 to 30 wt% by mass; and / or the oxidant in the chemical mechanical polishing slurry contains 0.5 to 10 wt% by mass; and / or the corrosion inhibitor in the chemical mechanical polishing slurry contains 0.025 to 0.3 wt% by mass.

7. The chemical mechanical polishing slurry as described in claim 1, wherein, The abrasive particles constitute 0.5 to 20 wt% of the chemical mechanical polishing slurry by mass percentage; and / or the oxidant constitutes 3 to 7 wt% of the chemical mechanical polishing slurry by mass percentage; and / or the corrosion inhibitor constitutes 0.025 to 0.1 wt% of the chemical mechanical polishing slurry by mass percentage; and / or the polishing accelerator constitutes 0.5 to 2 wt% of the chemical mechanical polishing slurry by mass percentage.

8. The chemical mechanical polishing slurry as described in claim 1, wherein, The chemical mechanical polishing (CMP) slurry comprises silicon dioxide abrasive particles, hydrogen peroxide, 4-amino-1,2,4-triazole, potassium nitrate, water, and a pH adjuster; or, the CMP slurry comprises silicon dioxide abrasive particles, hydrogen peroxide, 4-amino-1,2,4-triazole, sodium nitrate, water, and a pH adjuster; or, the CMP slurry comprises silicon dioxide abrasive particles, hydrogen peroxide, 5-methylbenzotriazole, ammonium nitrate, water, and a pH adjuster; or, the CMP slurry comprises silicon dioxide abrasive particles, hydrogen peroxide, methyl-1H-benzotriazole, sodium nitrate, water, and a pH adjuster; or, the CMP slurry comprises silicon dioxide abrasive particles, hydrogen peroxide, methyl-1H-benzotriazole, potassium nitrate, water, and a pH adjuster; or, the CMP slurry comprises silicon dioxide abrasive particles, hydrogen peroxide, 3-amino-1,2,4-triazole, ammonium nitrate, water, and a pH adjuster. Alternatively, the chemical mechanical polishing (CMP) slurry comprises silicon dioxide abrasive particles, hydrogen peroxide, 3-amino-1,2,4-triazole, sodium nitrate, water, and a pH adjuster; or, the CMP slurry comprises silicon dioxide abrasive particles, hydrogen peroxide, 1-hydroxybenzotriazole, potassium nitrate, water, and a pH adjuster; or, the CMP slurry comprises silicon dioxide abrasive particles, hydrogen peroxide, 1-hydroxybenzotriazole, ammonium nitrate, water, and a pH adjuster; or, the CMP slurry comprises silicon dioxide abrasive particles, hydrogen peroxide, L-arginine, ammonium nitrate, water, and a pH adjuster; or, the CMP slurry comprises silicon dioxide abrasive particles, hydrogen peroxide, L-arginine, sodium nitrate, water, and a pH adjuster; or, the CMP slurry comprises silicon dioxide abrasive particles, hydrogen peroxide, L-proline, potassium nitrate, water, and a pH adjuster. Alternatively, the chemical mechanical polishing (CMP) slurry comprises silicon dioxide abrasive particles, hydrogen peroxide, L-proline, ammonium nitrate, water, and a pH adjuster; or, the CMP slurry comprises silicon dioxide abrasive particles, hydrogen peroxide, methionine, sodium nitrate, water, and a pH adjuster; or, the CMP slurry comprises silicon dioxide abrasive particles, hydrogen peroxide, methionine, potassium nitrate, water, and a pH adjuster; or, the CMP slurry comprises silicon dioxide abrasive particles, hydrogen peroxide, L-serine, ammonium nitrate, water, and a pH adjuster; or, the CMP slurry comprises silicon dioxide abrasive particles, hydrogen peroxide, L-serine, sodium nitrate, water, and a pH adjuster; or, the CMP slurry comprises silicon dioxide abrasive particles, hydrogen peroxide, creatine, potassium nitrate, water, and a pH adjuster; or, the CMP slurry comprises silicon dioxide abrasive particles, hydrogen peroxide, creatine, ammonium nitrate, water, and a pH adjuster. Alternatively, the chemical mechanical polishing fluid may comprise silica abrasive particles, hydrogen peroxide, tris(hydroxymethyl)methylglycine, sodium nitrate, water, and a pH adjuster.Alternatively, the chemical mechanical polishing (CMP) slurry comprises silicon dioxide abrasive particles, hydrogen peroxide, tris(hydroxymethyl)methylglycine, potassium nitrate, water, and a pH adjuster; or, the CMP slurry comprises silicon dioxide abrasive particles, hydrogen peroxide, 2-amino-2-methyl-1-propanol, potassium nitrate, water, and a pH adjuster; or, the CMP slurry comprises silicon dioxide abrasive particles, hydrogen peroxide, DL-2-amino-1-butanol, sodium nitrate, water, and a pH adjuster; or, the CMP slurry comprises silicon dioxide abrasive particles, hydrogen peroxide, DL-2-amino-1-butanol, potassium nitrate, water, and a pH adjuster; or, the CMP slurry comprises silicon dioxide abrasive particles, hydrogen peroxide, 3-amino-4-octanol, ammonium nitrate, water, and a pH adjuster; or, the CMP slurry comprises silicon dioxide abrasive particles, hydrogen peroxide, 3-amino-4-octanol, sodium nitrate, water, and a pH adjuster. Alternatively, the chemical mechanical polishing (CMP) slurry comprises silicon dioxide abrasive particles, hydrogen peroxide, methionine, ammonium nitrate, water, and a pH adjuster; or, the CMP slurry comprises silicon dioxide abrasive particles, hydrogen peroxide, 2-aminobenzimidazole, sodium nitrate, water, and a pH adjuster; or, the CMP slurry comprises silicon dioxide abrasive particles, hydrogen peroxide, methyl-1H-benzotriazole, ammonium nitrate, water, and a pH adjuster; or, the CMP slurry comprises modified silicon dioxide abrasive particles, hydrogen peroxide, L-arginine, sodium nitrate, water, and a pH adjuster; or, the CMP slurry comprises modified silicon dioxide abrasive particles, hydrogen peroxide, 2-amino-2-methyl-1-propanol, potassium nitrate, water, and a pH adjuster; or, the CMP slurry comprises modified silicon dioxide abrasive particles, hydrogen peroxide, 1-hydroxybenzotriazole, ammonium nitrate, water, and a pH adjuster. Alternatively, the chemical mechanical polishing fluid may comprise silicon dioxide abrasive particles, hydrogen peroxide, creatine, sodium nitrate, water, and a pH adjuster.

9. A method for preparing a chemical mechanical polishing slurry as described in any one of claims 1 to 8, comprising the following steps: mixing abrasive particles, an oxidant, a corrosion inhibitor, a polishing accelerator and water evenly, and adjusting the pH value using a pH adjuster to obtain the chemical mechanical polishing slurry.

10. Use of a chemical mechanical polishing slurry as described in any one of claims 1 to 8 or a chemical mechanical polishing slurry prepared by the preparation method described in claim 9 for polishing gallium arsenide wafers.

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