Production method of an embedded circuit board

Abstract

This invention provides a manufacturing process for an embedded circuit board, comprising: forming a base hole on a substrate for accommodating a wafer; positioning the substrate and wafer using a fixing device; pressing the substrate and wafer onto a first layer; removing the fixing device; providing an integrated pickling chamber and a plasma cleaning chamber; transferring the wafer and substrate to a lifting device; using the lifting device to lift the wafer and substrate into the plasma cleaning chamber for plasma cleaning; lowering the wafer and substrate into the pickling chamber using the lifting device; driving a water spray assembly in the pickling chamber to move above the wafer and substrate to uniformly spray pickling solution onto the wafer and substrate; removing the wafer and substrate; pressing the substrate and wafer onto a second layer, with the first and second layers located on opposite sides of the wafer; fabricating circuitry and soldering components onto the first and second layers. This invention improves production efficiency.

Description

Technical Field

[0001] This invention belongs to the field of circuit board manufacturing technology, specifically relating to a manufacturing process for embedded circuit boards. Prior Technology

[0002] An embedded circuit board is a special electronic device that integrates multiple functional modules such as microprocessors, memory, and input / output interfaces onto a single circuit board. It possesses a high degree of integration, enabling complex functions to be implemented within a limited space. In existing conventional methods for manufacturing embedded circuit boards, adhesive tape is typically used to position the chip before lamination. This leaves adhesive residue after the first lamination, which can affect subsequent laminations. Therefore, the chip needs to be cleaned after the first lamination. Current technology uses different equipment for plasma cleaning and acid cleaning processes, resulting in low production efficiency.

[0003] In view of this, we, the inventors, devoted ourselves to further research and development and improvement, hoping to solve the above problems with a better invention. After continuous experimentation and modification, this invention came into being. Summary of the Invention

[0004] The present invention aims to at least solve one of the aforementioned technical problems existing in the prior art. To this end, the present invention provides a manufacturing process for embedded circuit boards that can improve production efficiency.

[0005] According to an embodiment of the present invention, a manufacturing process for an embedded circuit board includes: forming a base hole on a substrate for accommodating a wafer; positioning the substrate and the wafer using a fixing member; pressing the substrate and the wafer onto a first layer; removing the fixing member; providing an integrally formed pickling chamber and a plasma cleaning chamber; transferring the wafer and the substrate to a lifting device; lifting the wafer and the substrate into the plasma cleaning chamber via the lifting device for plasma cleaning; and lowering the wafer and the substrate into the pickling chamber via the lifting device. In the pickling chamber, the water spray assembly is moved above the wafer and the substrate to uniformly spray the pickling solution onto them. The wafer and the substrate are then removed. The substrate and the wafer are pressed onto a second layer, with the first and second layers located on opposite sides of the wafer. Lead holes are drilled on the first and second layers using a laser to expose the leads of the wafer. Electroplating is used to fill the holes, forming a conductive layer. Circuitry is fabricated on the first and second layers, and components are soldered.

[0006] According to embodiments of the present invention, at least the following beneficial effects are achieved: During the initial lamination, it is unavoidable to use fasteners to secure the wafer and substrate. Removing these fasteners leaves residual adhesive on the wafer and substrate. Therefore, plasma cleaning is first used to remove surface grease, residual photoresist, and other organic contaminants and microparticles using high-energy active particles. This removes organic layers that may hinder acid contact, making the pickling reaction more uniform and thorough. Then, acid cleaning is performed, using an acidic solution to dissolve inorganic contaminants such as metal oxides and rust. This staged treatment ensures that both organic and inorganic contaminants are effectively removed, guaranteeing the quality of subsequent electroplating and lamination. Furthermore, both the pickling and plasma cleaning of the wafer and substrate are completed on a lifting device, avoiding long-distance transport between different devices and effectively improving production efficiency.

[0007] According to some embodiments of the present invention, transferring the wafer and the substrate to a lifting device in an acid pickling chamber includes: controlling the lifting device to descend until the carrying platform on the lifting device descends into the acid pickling chamber, opening the side door of the acid pickling chamber, placing the wafer and the substrate onto the substrate stage above the carrying platform, and closing the door.

[0008] According to some embodiments of the present invention, the lifting device is used to lift the wafer and the substrate into the plasma cleaning chamber, which includes: controlling the lifting device to lift, moving the support platform on the lifting device to abut against the partition located between the plasma cleaning chamber and the acid cleaning chamber, and moving the substrate stage above the support platform into the partition hole opened in the center of the partition.

[0009] According to some embodiments of the present invention, plasma cleaning of the wafer and the substrate includes: controlling an air extraction device connected to the pickling chamber to extract air from the pickling chamber and extracting air from the plasma cleaning chamber through ventilation holes on the partition; injecting process gas into the plasma cleaning chamber; and energizing the electrodes at the top of the plasma cleaning chamber and the electrodes of the support platform to ionize the process gas into plasma.

[0010] According to some embodiments of the present invention, the process of lowering the wafer and the substrate into the pickling chamber by means of the lifting device includes: stopping the air extraction device to make the air pressure in the pickling chamber equal to the atmospheric pressure, controlling the lifting device to descend so that the support platform separates from the partition and moves to a position below the nozzle of the water spray assembly.

[0011] According to some embodiments of the present invention, driving the water spray assembly in the pickling chamber to move above the wafer and the substrate includes: controlling the output shaft of a rotary motor located outside the pickling chamber to rotate, the output shaft driving the spray nozzle of the water spray assembly located inside the pickling chamber to swing horizontally, and controlling the nozzle on the spray nozzle to move above the substrate stage on the lifting device.

[0012] According to some embodiments of the present invention, a water inlet pipe is vertically connected to the lower end of the pickling chamber, and the upper end of the water inlet pipe extends into the pickling chamber. A mounting plate is provided at the lower end of the water inlet pipe to seal the lower end of the water inlet pipe. A rotary motor (802 bolt) is bolted to the lower part of the mounting plate. The output shaft passes through the mounting plate, and a rotary seal is provided between the output shaft and the mounting plate. The output shaft passes through the water inlet pipe, and a spray nozzle is rotatably mounted on the water inlet pipe. A square groove is provided on the inner wall of the spray nozzle, and the upper end of the output shaft is embedded in the groove to drive the spray nozzle to rotate.

[0013] According to some embodiments of the present invention, uniformly spraying pickling solution onto the wafer and the substrate includes: controlling the wafer and the substrate on the lifting device to rotate horizontally, controlling the nozzle on the spray pipe to move back and forth through the rotary motor, and the nozzle movement path passing through the rotation axis of the substrate stage, sequentially inputting pickling solution and deionized water into the water inlet pipe, and controlling the air extraction device to extract the liquid accumulated in the pickling chamber.

[0014] According to some embodiments of the present invention, removing the wafer and the substrate includes: controlling the nozzle on the spray nozzle to move above the substrate removal stage by a rotary motor, then introducing dry inert gas into the pickling chamber to dry the wafer and the substrate, opening the chamber door, and removing the wafer and the substrate.

[0015] According to some embodiments of the present invention, after the components are soldered, a cleaning agent is used to remove soldering residues, and then electrical performance testing and visual inspection are performed.

[0016] Additional aspects and advantages of the invention will be set forth in part in the description which follows, and some of these additional aspects and advantages will become apparent from the description or may be learned by practice of the invention. Simple Explanation of the Diagram

[0017] The present invention will be further described below with reference to the drawings and embodiments, wherein: [Figure 1] is a schematic cross-sectional view of the pickling chamber and plasma cleaning chamber according to an embodiment of the present invention; [Figure 2] is an enlarged view of point A in Figure 1; [Figure 3] is a schematic diagram of a fixing member connecting a substrate and a wafer according to an embodiment of the present invention; [Figure 4] is a schematic diagram of the first layer plate being pressed according to an embodiment of the present invention; [Figure 5] is a schematic diagram of a specific embodiment of the present invention after the removal of the fastener; [Figure 6] is a schematic diagram of the second layer plate being pressed according to an embodiment of the present invention; [Figure 7] is a schematic diagram of an air extraction device according to an embodiment of the present invention; [Figure 8] is a schematic diagram of a water spray assembly according to an embodiment of the present invention; [Figure 9] is a schematic diagram of the pickling chamber according to an embodiment of the present invention. Implementation

[0018] Regarding the technical means employed by us inventors, several preferred embodiments are described in detail below with accompanying drawings, so that you may gain a deeper understanding and acceptance of the present invention.

[0019] The embodiments of the present invention are described in detail below. Examples of these embodiments are shown in the drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the drawings are exemplary and are only used to explain the present invention, and should not be construed as limiting the present invention.

[0020] In the description of this invention, it should be understood that the orientation descriptions, such as up, down, front, back, left, right, etc., are based on the orientation or positional relationship shown in the drawings. They are only for the convenience of describing this invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limiting this invention.

[0021] In the description of this invention, "several" means one or more, "multiple" means two or more, "greater than," "less than," and "exceeding" are understood to exclude the stated number, while "above," "below," and "within" are understood to include the stated number. The use of "first" and "second" in the description is merely for distinguishing technical features and should not be construed as indicating or implying relative importance, or implicitly indicating the number of indicated technical features, or implicitly indicating the order of the indicated technical features.

[0022] In the description of this invention, unless otherwise explicitly defined, terms such as "set up," "install," and "connect" should be interpreted broadly. Those skilled in the art to which this invention pertains can reasonably determine the specific meaning of the above terms in this invention in conjunction with the specific content of the technical solution.

[0023] In the description of this invention, the terms "one embodiment," "some embodiments," "illustrative embodiment," "example," "specific example," or "some examples," etc., refer to specific features, structures, materials, or characteristics described in connection with that embodiment or example, which are included in at least one embodiment or example of the invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples.

[0024] Referring to Figures 1 to 9, a manufacturing process for an embedded circuit board according to an embodiment of the present invention includes the following steps:

[0025] A pre-hole 110 is formed on the substrate 100 to accommodate the wafer 200. The wafer 200 is placed into the pre-hole 110, and a fixing member 300 is used to position the substrate 100 and the wafer 200. The fixing member 300 is a common high-temperature adhesive tape used in electronic component manufacturing processes. The substrate 100 and the wafer 200 are adhered to the fixing member 300 for fixation and positioning. The substrate 100 and the wafer 200 are then pressed onto the first layer plate 400. Typically, the lower ends of the substrate 100 and the wafer 200 are adhered to the fixing member 300, and the upper ends of the substrate 100 and the wafer 200 are pressed and connected to the first layer plate 400. Due to the fixing effect of the fixing member 300, the positional accuracy of the first layer plate 400, the substrate 100, and the wafer 200 during the pressing process can be improved.

[0026] Remove fastener 300. Since fastener 300 will affect subsequent processing, it needs to be removed. Since removing fastener 300 only requires tearing it off, the labor intensity is not high, so it is done manually.

[0027] An integrated pickling chamber 500 and plasma cleaning chamber 700 are provided, connected by flanges and bolts. The wafer 200 and substrate 100 are transferred to a lifting device 600 within the pickling chamber 500. The lifting device 600 lifts the wafer 200 and substrate 100 into the plasma cleaning chamber 700 for plasma cleaning. Due to the bonding process and the influence of the fixing components 300, some residual adhesive remains on the wafer 200 and substrate 100, necessitating cleaning to prevent interference with subsequent processing.

[0028] The lifting device 600 lowers the wafer 200 and substrate 100 into the pickling chamber 500, driving the water spray assembly 800 in the pickling chamber 500 to move above the wafer 200 and substrate 100, uniformly spraying the pickling solution onto them. The process involves first plasma cleaning, followed by acid pickling, for phased decontamination. Plasma cleaning uses high-energy active particles to remove surface grease, residual photoresist, and other organic contaminants and microparticles, removing organic layers that might hinder acid contact, resulting in a more uniform and thorough pickling reaction. Acid pickling uses an acidic solution to dissolve inorganic contaminants such as metal oxides and rust. This phased treatment ensures that both organic and inorganic contaminants are effectively removed.

[0029] Remove the wafer 200 and substrate 100; after the contaminants are effectively removed, move the wafer 200 and substrate 100 to the next process.

[0030] The substrate 100 and the wafer 200 are pressed onto the second layer 410 to further ensure the bonding strength and stability between the wafer 200 and the substrate 100. Temperature, pressure, and time are controlled to avoid over-pressing that could cause material deformation. The second layer 410 is located on the side of the wafer 200 and substrate 100 away from the first layer 400, while the first layer 400 and the second layer 410 are located on opposite sides of the wafer 200. The wafer 200 and the substrate 100 are embedded between the first layer 400 and the second layer 410.

[0031] According to the circuit design drawings, the drilling positions and diameters are determined, and a laser drilling machine is used to drill pin holes on the first layer board 400 and the second layer board 410. The pin holes are used to expose the pins of the chip 200. Since the chip 200 is surrounded by the first layer board 400 and the second layer board 410 on both sides, holes are needed to make electrical connections to the pins of the chip 200.

[0032] Electroplating fills the pin holes, forming a conductive layer in the pin holes to enable the wafer 200 to connect to external circuitry;

[0033] Circuits are fabricated and components are soldered on the first layer board 400 and the second layer board 410.

[0034] During the initial lamination process, it is unavoidable to use a fixture 300 to secure the wafer 200 and substrate 100. Removing the fixture 300 leaves residual adhesive on both wafers and substrates. Therefore, plasma cleaning is first used to remove surface grease, residual photoresist, and other organic contaminants and microparticles using high-energy active particles. This removes organic layers that might hinder acid contact, making the acid cleaning reaction more uniform and thorough. Then, acid cleaning is performed, using an acidic solution to dissolve inorganic contaminants such as metal oxides and rust. This staged treatment ensures that both organic and inorganic contaminants are effectively removed, guaranteeing the quality of subsequent electroplating and lamination. Furthermore, both the acid cleaning and plasma cleaning of the wafer 200 and substrate 100 are completed on the lifting device 600, avoiding long-distance transport between different devices and effectively improving production efficiency.

[0035] Referring to Figures 1 to 5, it can be understood that transferring the wafer 200 and substrate 100 to the lifting device 600 within the pickling chamber 500 specifically includes the following steps: The lifting device 600 uses common drive methods such as cylinders, electric push rods, or motor lead screws to achieve vertical lifting. The main body of the lifting device 600 is housed within a closed housing, which is bolted to the bottom of the pickling chamber 500. The telescopic end of the lifting device 600 passes through the housing and connects to the support platform 610. The telescopic end of the lifting device 600 is sealed to the housing by a sliding sealing ring. The housing serves to prevent the pickling solution from damaging the lifting device 600. The support platform 610 is horizontally positioned for mounting the substrate stage 620, which supports the wafer 200. The substrate stage 620 is typically made of insulating material to meet the process requirements of plasma cleaning. The lifting device 600 is lowered until the support platform 610 on the lifting device 600 descends into the pickling chamber 500. The side door 510 of the pickling chamber 500 is opened, and the wafer 200 and substrate 100 are placed onto the substrate stage 620 above the support platform 610 by manual or robotic transfer. The side door 510 of the pickling chamber 500 is then closed. The purpose of the door 510 is to create a closed environment in the pickling chamber 500 after the door 510 is closed, so as to facilitate vacuuming.

[0036] Referring to Figures 4 to 9, it can be understood that the process of raising the wafer 200 and substrate 100 into the plasma cleaning chamber 700 via the lifting device 600 includes the following steps: controlling the lifting device 600 to rise, with the plasma cleaning chamber 700 positioned above the acid pickling chamber 500, and the plasma cleaning chamber 700 and acid pickling chamber 500 separated by a partition 900; moving the support platform 610 to abut against the partition 900 located between the plasma cleaning chamber 700 and the acid pickling chamber 500; and moving the substrate stage 620 into the partition hole 910 opened at the center of the partition 900. The size of the support platform 610 is larger than the size of the partition hole 910, and the support platform 610 is aligned with the partition hole 910 in the vertical direction, so the upper edge of the support platform 610 abuts against the partition 900 to prevent the electromagnetic field in the plasma cleaning chamber 700 from leaking into the acid pickling chamber 500. The substrate stage 620 passes through the partition hole 910, causing the wafer 200 and substrate 100 on the substrate stage 620 to rise into the plasma cleaning chamber 700.

[0037] Referring to Figures 1 to 9, it can be understood that plasma cleaning of the wafer 200 and substrate 100 includes the following steps: controlling the air extraction device 920, which is connected to the pickling chamber 500, to extract air from the pickling chamber 500; controlling the air extraction device 920 to extract air from the plasma cleaning chamber 700 through multiple ventilation holes on the partition 900. The ventilation holes on the partition 900 connect the plasma cleaning chamber 700 and the pickling chamber 500. The diameter of a single ventilation hole is less than 1 mm, preventing the electromagnetic field in the plasma cleaning chamber 700 from entering the pickling chamber 500 through the ventilation holes, and also allowing the fumes generated during plasma cleaning to be discharged from the ventilation holes. The plasma cleaning chamber 700 is connected to an air pipe. Process gas, such as hydrogen, argon, or nitrogen, is injected into the plasma cleaning chamber 700 through a gas tube. An radio frequency power supply is used to energize the electrodes at the top of the plasma cleaning chamber 700 and the electrodes inside the support platform 610, causing the process gas to become plasma. This plasma then bombards the surfaces of the wafer 200 and substrate 100, removing residual adhesive and other organic matter from their surfaces.

[0038] Referring to Figures 1 to 9, it can be understood that the process of lowering the wafer 200 and substrate 100 into the pickling chamber 500 via the lifting device 600 includes the following steps: cutting off the radio frequency power supply, stopping the vacuum device 920, and injecting nitrogen gas into the plasma cleaning chamber 700 through the air pipe. During pickling, the wafer 200 and substrate 100 are protected by the inert gas nitrogen, which prevents them from being oxidized by oxygen in the air. The gas pressure in the pickling chamber 500 is made equal to the atmospheric pressure, and the lifting device 600 is controlled to descend, separating the support platform 610 from the partition 900, and moving the substrate stage 620 to a height lower than the nozzle 801 of the water spray assembly 800. The substrate stage 620 is moved into the pickling chamber 500 to facilitate the pickling process.

[0039] Referring to Figures 1 to 9, it can be understood that moving the water spray assembly 800 in the pickling chamber 500 above the wafer 200 and substrate 100 includes the following steps: controlling the rotary motor 802 to drive the output shaft 803 to rotate, the output shaft 803 passing through the water inlet pipe 810 and then driving the spray pipe 820 located in the pickling chamber 500 to rotate, and controlling the nozzle 801 on the spray pipe 820 to move above the substrate stage 620. The water inlet pipe 810 is vertically connected to the lower end of the pickling chamber 500, and the water spray assembly 800 consists of the water inlet pipe 810 and the spray pipe 820. The upper end of the water inlet pipe 810 extends into the pickling chamber 500. A mounting plate is provided at the lower end of the water inlet pipe 810. The mounting plate is used to seal the lower end of the water inlet pipe 810. The rotary motor 802 is bolted to the bottom of the mounting plate. The output shaft 803 passes vertically upward through the mounting plate and enters the water inlet pipe 810. The upper end of the output shaft of the rotary motor 802 extends out of the upper end of the water inlet pipe 810. A rotary seal is provided between the output shaft 803 and the mounting plate. The rotary seal is existing technology and will not be described in detail. The output shaft 803 passes through the water inlet pipe 810. The nozzle 820 is rotatably mounted on the water inlet pipe 810. A square groove is provided on the inner wall of the nozzle 820. The upper end of the output shaft 803 is embedded in the groove to drive the nozzle 820 to rotate. One section of the nozzle 820 is vertically sleeved on the outer wall of the water inlet pipe 810, and the other section extends horizontally. The nozzle 801 is provided on the side wall of the nozzle 820 away from the water inlet pipe 810. By placing the rotary motor 802 outside the pickling chamber 500, the pickling solution can be prevented from corroding the rotary motor 802, thereby extending the service life of the rotary motor 802 and making it easier to replace.

[0040] Referring to Figures 1 to 8, it can be understood that uniformly spraying the pickling solution onto the wafer 200 and substrate 100 includes the following steps: controlling the carrier motor 611 on the carrier platform 610 to drive the substrate stage 620 on the carrier platform 610 to rotate horizontally; controlling the nozzle 801 on the spray pipe 820 to reciprocate through the rotary motor 802; and the reciprocating path of the nozzle 801 passing through the rotation axis of the substrate stage 620 and the edge of the substrate stage 620 to input the pickling solution into the water inlet pipe 810; the pickling solution is sprayed downward from the nozzle 801 through the spray pipe 820; after rinsing with the pickling solution for 2 minutes, deionized water is input into the water inlet pipe 810; the deionized water is sprayed downward from the nozzle 801 through the spray pipe 820 to rinse away the remaining pickling solution; and controlling the vacuum device 920 to extract the accumulated liquid in the pickling chamber 500. The substrate stage 620 is rotatably mounted on the support platform 610. The support motor 611 of the support platform 610 drives the substrate stage 620 to rotate. The specific structure and installation method of the support motor 611 are existing technologies and will not be described in detail. During its movement, the nozzle 801 passes through the center of rotation of the substrate stage 620. Combined with the rotation of the substrate stage 620 itself, the pickling solution sprayed by the nozzle 801 can evenly clean the wafer 200 and substrate 100 on the substrate stage 620. The vacuum pump 920 includes a temporary storage tank 921 and a vacuum pump 922. The vacuum pump 922 is used to extract gas from the temporary storage tank 921. The temporary storage tank 921 is connected to the bottom of the pickling chamber 500 through a vacuum pipe 923. This structure allows the vacuum pump 920 to extract both liquid and gas. The vacuum pump 920 extracts waste liquid after cleaning during the pickling process and creates a vacuum by extracting gas during the plasma cleaning process.

[0041] Referring to Figures 5 to 9, the removal of wafer 200 and substrate 100 includes the following steps: stopping the carrier motor 611, controlling the nozzle 801 on the nozzle 820 to move to a position that avoids the substrate stage 620 in the vertical direction via the rotary motor 802, injecting dry nitrogen or other inert gas into the plasma cleaning chamber 700 through the air pipe, and then the dry inert gas is introduced into the acid cleaning chamber 500 through the ventilation holes on the partition 900, starting to dry wafer 200 and substrate 100, and the vacuum device 920 extracts the moist inert gas. The chamber door 510 is opened, and wafer 200 and substrate 100 are removed. The nozzle 801 and nozzle 820 can be moved to a position that does not affect the lifting and lowering of the substrate stage 620, providing sufficient vertical space for removing wafer 200 and substrate 100 and subsequently placing wafer 200 and substrate 100.

[0042] Understandably, electroplating for hole filling involves the following steps: cleaning the hole walls with chemical cleaning agents to ensure good adhesion between the electroplated layer and the hole walls, and depositing metal inside the hole through an electroplating process.

[0043] Understandably, after the components are soldered, a cleaning agent is used to remove soldering residue, and then electrical performance testing and visual inspection are performed.

[0044] In conclusion, the technical means disclosed in this invention can effectively solve the problems of conventional inventions and achieve the expected purpose and effect. Moreover, it has not been published or publicly used before the application and has long-term progressiveness. It is indeed an invention as defined by the Patent Law. Therefore, this application is filed in accordance with the law. I humbly request Your Excellency to give a detailed review and grant me an invention patent. I am deeply grateful for Your Excellency's kindness.

[0045] However, the above descriptions are merely several preferred embodiments of the present invention and should not be construed as limiting the scope of the present invention. All equivalent changes and modifications made in accordance with the scope of the patent application and the contents of the specification of the present invention should still fall within the scope of the patent of the present invention.

[0046] [This invention] 100:Substrate 110: Basic Pore 200: Chip 300: Fastener 400: First layer board 410: Second layer board 500: Pickling Room 510: Box Door 600: Lifting device 611: Carrier motor 610: Supporting Platform 620: Substrate Stage 700: Plasma Cleaning Chamber 800: Water Spray Components 801: Nozzle 802: Rotary Electric Machine 803: Output Shaft 810: Water inlet pipe 820: Nozzle 900: partition 910: Partition hole 920: Air extraction device 921: Temporary Storage Tank 922: Vacuum Pump 923: Extraction pipe

Claims

1. A manufacturing process for an embedded circuit board, characterized in that it includes: A pre-hole (110) is formed on the substrate (100) for accommodating the wafer (200); the substrate (100) and the wafer (200) are positioned using a fastener (300), and the substrate (100) and the wafer (200) are pressed onto the first layer plate (400); the fastener (300) is removed; an integrally formed pickling chamber (500) and a plasma cleaning chamber (700) are provided, and the wafer (200) and the substrate (100) are transferred to a lifting device (600), and the lifting device (600) is used to lift the wafer (200) and the substrate (100) into the plasma cleaning chamber (700) for plasma cleaning of the wafer (200) and the substrate (100); The wafer (200) and the substrate (100) are lowered into the pickling chamber (500) by a lifting device (600), and the water spray assembly (800) in the pickling chamber (500) is moved above the wafer (200) and the substrate (100) to uniformly spray the pickling solution onto the wafer (200) and the substrate (100); The wafer (200) and the substrate (100) are removed; The substrate (100) and the wafer (200) are pressed onto the second layer plate (410), with the first layer plate (400) and the second layer plate (410) located on opposite sides of the wafer (200); Lead holes are drilled on the first layer plate (400) and the second layer plate (410) using a laser to expose the leads of the wafer (200); Electroplating is performed to fill the leads, forming a conductive layer in the lead holes; Circuits are fabricated on the first layer (400) and the second layer (410), and components are soldered.

2. The manufacturing process of the embedded circuit board as described in claim 1, wherein, The process of transferring the wafer (200) and the substrate (100) to the lifting device (600) inside the pickling chamber (500) includes: controlling the lifting device (600) to descend until the support platform (610) on the lifting device (600) descends into the pickling chamber (500); opening the door (510) on the side of the pickling chamber (500); placing the wafer (200) and the substrate (100) onto the substrate stage (620) above the support platform (610); and closing the door (510).

3. The manufacturing process of the embedded circuit board as described in claim 1, wherein, The lifting device (600) is used to lift the wafer (200) and the substrate (100) into the plasma cleaning chamber (700). This includes: controlling the lifting device (600) to lift, so that the support platform (610) on the lifting device (600) moves to abut against the partition (900) located between the plasma cleaning chamber (700) and the pickling chamber (500), and so that the substrate stage (620) above the support platform (610) moves into the partition hole (910) opened in the center of the partition (900).

4. The manufacturing process of the embedded circuit board as described in claim 3, wherein, Plasma cleaning of the wafer (200) and the substrate (100) includes: controlling an air extraction device (920) connected to the pickling chamber (500) to extract air from the pickling chamber (500), extracting air from the plasma cleaning chamber (700) through ventilation holes on the partition (900), injecting process gas into the plasma cleaning chamber (700), and energizing the electrodes at the top of the plasma cleaning chamber (700) and the electrodes of the support platform (610) to ionize the process gas into plasma.

5. The manufacturing process of the embedded circuit board as described in claim 3, wherein, The process of lowering the wafer (200) and the substrate (100) into the pickling chamber (500) via the lifting device (600) includes: stopping the air extraction device (920) to make the air pressure in the pickling chamber (500) equal to the atmospheric pressure; controlling the lifting device (600) to lower, so that the support platform (610) separates from the partition (900) and moves to a position below the nozzle (801) of the water spray assembly (800).

6. The manufacturing process of the embedded circuit board as described in claim 1, wherein, Driving the water spray assembly (800) in the pickling chamber (500) to move above the wafer (200) and the substrate (100) includes: controlling the output shaft (803) of a rotary motor (802) located outside the pickling chamber (500) to rotate, the output shaft (803) driving the nozzle (820) of the water spray assembly (800) located inside the pickling chamber (500) to swing horizontally, and controlling the nozzle (801) on the nozzle (820) to move above the substrate stage (620) on the lifting device (600).

7. The manufacturing process of the embedded circuit board as described in claim 6, wherein, The pickling chamber (500) is vertically connected to a water inlet pipe (810) at its lower end, and the upper end of the water inlet pipe (810) extends into the pickling chamber (500). A mounting plate is provided at the lower end of the water inlet pipe (810), which is used to close the lower end of the water inlet pipe (810). A rotary motor 802 is bolted to the lower part of the mounting plate. The output shaft (803) passes through the mounting plate, and a rotary seal is provided between the output shaft (803) and the mounting plate. The output shaft (803) passes through the water inlet pipe (810), and the spray pipe (820) is rotatably mounted on the water inlet pipe (810). A square groove is provided on the inner wall of the spray pipe (820), and the upper end of the output shaft (803) is embedded in the groove to drive the spray pipe (820) to rotate.

8. The manufacturing process of the embedded circuit board as described in claim 6, wherein, The process of uniformly spraying pickling solution onto the wafer (200) and the substrate (100) includes: controlling the wafer (200) and the substrate (100) on the lifting device (600) to rotate horizontally; controlling the nozzle (801) on the spray pipe (820) to move back and forth via the rotary motor (802); and controlling the movement path of the nozzle (801) to pass through the rotation axis of the substrate stage (620); sequentially inputting pickling solution and deionized water into the water inlet pipe (810); and controlling the air extraction device (920) to extract the accumulated liquid in the pickling chamber (500).

9. The manufacturing process of the embedded circuit board as described in claim 6, wherein, Removing the wafer (200) and the substrate (100) includes: controlling the nozzle (801) on the nozzle (820) to move above the ejection stage (620) by the rotary motor (802), then introducing dry inert gas into the pickling chamber (500) to dry the wafer (200) and the substrate (100), opening the chamber door (510), and removing the wafer (200) and the substrate (100).

10. The manufacturing process of the embedded circuit board as described in claim 1, wherein, After the components are soldered, use a cleaning agent to remove soldering residue, and then perform electrical performance testing and visual inspection.

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