Treatment methods and plasma treatment devices

Abstract

A processing method for plasma treatment of a substrate includes the following steps: placing a temperature-adjustable object on a mounting surface of a substrate support portion configured within a processing container capable of depressurization; forming a heat transfer layer for the temperature-adjustable object on the mounting surface of the substrate support portion, the heat transfer layer being composed of and freely deformable of at least one of a liquid layer or a freely deformable solid layer; and performing plasma treatment on the substrate on the mounting surface on which the heat transfer layer is formed.

Description

[Technical Field]

[0001] This invention relates to a processing method and a plasma processing apparatus. [Previous Technology]

[0002] Patent Document 1 discloses a substrate processing apparatus having a mounting surface for mounting a substrate and a mounting stage, wherein a gas supply pipe for supplying heat transfer gas to the gap between the substrate and the mounting surface is provided in the mounting stage. [Prior Art Documents] [Patent Documents]

[0003] [Patent Document 1] Japanese Patent Application Publication No. 2020-120081 [Summary of the Invention]

[0004] [The problem the invention aims to solve]

[0005] The technology of this invention lies in efficiently adjusting the temperature of the object during plasma processing. [Technical Means for Solving the Problem]

[0006] One aspect of the present invention is a processing method that performs plasma treatment on a substrate, comprising the following steps: placing a temperature-adjustable object on a mounting surface of a substrate support portion configured within a decompression-capable processing container; forming a heat transfer layer for the temperature-adjustable object on the mounting surface of the substrate support portion, the heat transfer layer being composed of and freely deformable from at least one of a liquid layer or a freely deformable solid layer; and performing plasma treatment on the substrate on the mounting surface on which the heat transfer layer is formed. [Effects of the Invention]

[0007] According to the present invention, the temperature of the object can be efficiently adjusted during plasma processing.

Implementation Method

[0009] In the manufacturing process of semiconductor devices, plasma is used to perform plasma treatments such as etching or film deposition on substrates such as semiconductor wafers (hereinafter referred to as "wafers"). The plasma treatment is performed with the substrate placed on a substrate support stage inside a depressurized processing container.

[0010] Furthermore, in order to obtain good and uniform plasma treatment results in the central and peripheral portions of the substrate, sometimes a ring-shaped component, i.e. an edge ring, is placed on the substrate support in a manner that surrounds the substrate on the substrate support.

[0011] Furthermore, the result of plasma processing depends on the temperature of the substrate. Therefore, the temperature of the substrate support stage is adjusted during plasma processing, and the temperature of the substrate is adjusted via the substrate support stage. When using the aforementioned edge ring, the temperature of the edge ring affects the plasma processing result at the periphery of the substrate; therefore, the temperature adjustment of the edge ring is also important. The temperature of the edge ring is also adjusted via the substrate support stage. Previously, a heat transfer gas such as He gas was supplied between the substrate support stage, the substrate, and the edge ring to efficiently adjust the temperature of the substrate and the edge ring via the substrate support stage.

[0012] However, in cases where the heat input from the plasma to the substrate is large during plasma processing, there is a situation where, even if a heat transfer gas is used as described above, it is not possible to adequately adjust the temperature of at least one of the substrate or the edge ring.

[0013] Therefore, the technology of the present invention is to efficiently adjust the temperature of at least one of the substrate or edge ring, i.e., the temperature of the object to be adjusted, during plasma processing.

[0014] Hereinafter, the processing method and plasma processing apparatus of this embodiment will be described with reference to the drawings. Furthermore, in this specification and drawings, elements having substantially the same functional configuration are omitted from repeated description by using the same symbols.

[0015] (First Embodiment) <Plasma Processing System> FIG1 is a top view showing the general configuration of a plasma processing system including a processing module as a plasma processing apparatus of the first embodiment.

[0016] The plasma processing system 1 of FIG1 includes an atmospheric section 10 and a depressurization section 11, which are integrally connected via loading lock-up modules 20 and 21. The atmospheric section 10 includes an atmospheric module for performing desired processing on the wafer W, which serves as a substrate, under atmospheric pressure. The depressurization section 11 includes a processing module 60 for performing desired processing on the wafer W under depressurized conditions (vacuum environment).

[0017] Loading lock-up modules 20 and 21 are configured to connect the carrier module 30 included in the atmospheric section 10 and the transfer module 50 included in the depressurization section 11 via a gate valve (not shown). Loading lock-up modules 20 and 21 are configured to temporarily hold the wafer W. Furthermore, loading lock-up modules 20 and 21 are configured to switch the internal environment between atmospheric pressure and depressurization.

[0018] The atmospheric section 10 includes: a carrier module 30, which has the following conveying mechanism 40; and a loading port 32 for holding a wafer transfer pod (FOUP: Front Opening Unified Pod) 31. The wafer transfer pod 31 can hold a plurality of wafers W. Furthermore, a locator module (not shown) for adjusting the horizontal orientation of the wafers W and a buffer module (not shown) for temporarily storing a plurality of wafers W can also be connected to the carrier module 30.

[0019] The carrier module 30 has a rectangular housing, and the interior of the housing is maintained at atmospheric pressure. A plurality of, for example, five loading ports 32 are arranged side by side on one of the long sides of the housing constituting the carrier module 30. Loading locking modules 20 and 21 are arranged side by side on the other long side of the housing constituting the carrier module 30.

[0020] A transport mechanism 40 configured to transport wafer W is provided inside the housing of the carrier module 30. The transport mechanism 40 includes a transport arm 41 that supports the wafer W during transport, a rotary table 42 that rotatably supports the transport arm 41, and a base 43 on which the rotary table 42 is mounted. Furthermore, a guide rail 44 extending along the length direction of the carrier module 30 is provided inside the carrier module 30. The base 43 is mounted on the guide rail 44, and the transport mechanism 40 is configured to move along the guide rail 44.

[0021] The decompression unit 11 includes a transfer module 50 for transporting wafers W and a processing module 60 for performing plasma processing on the wafers W transported from the transfer module 50. The interiors of the transfer module 50 and the processing module 60 (specifically, the interiors of the decompression transfer chamber 51 and the plasma processing chamber 100 described below) are maintained in a decompression environment. A plurality of processing modules 60, for example, eight, are provided for one transfer module 50.

[0022] The transfer module 50 includes a depressurization transfer chamber 51 with a polygonal (pentagonal in the example shown) housing, which is connected to the loading lock-up modules 20 and 21. The transfer module 50 transfers the wafer W into the loading lock-up module 20 to a processing module 60, and transfers the wafer W after performing the desired plasma processing by the processing module 60 to the atmosphere 10 via the loading lock-up module 21.

[0023] The processing module 60 performs plasma processing on the wafer W, such as etching or film deposition. Furthermore, the processing module 60 is connected to the transfer module 50 via a gate valve 61. The configuration of this processing module 60 will be described below.

[0024] A conveying mechanism 70 configured to convey wafer W is provided inside the depressurization conveying chamber 51 of the conveying module 50. Similar to the conveying mechanism 40 described above, the conveying mechanism 70 includes a conveying arm 71 that supports the wafer W during conveying, a rotary table 72 that rotatably supports the conveying arm 71, and a base 73 on which the rotary table 72 is mounted. Furthermore, a guide rail 74 extending along the length direction of the conveying module 50 is provided inside the depressurization conveying chamber 51 of the conveying module 50. The base 73 is mounted on the guide rail 74, and the conveying mechanism 70 is configured to move along the guide rail 74.

[0025] In the transfer module 50, the transfer arm 71 receives the wafer W held in the loading latch module 20 and moves it into the processing module 60. Also, the transfer arm 71 receives the wafer held in the processing module 60 and moves it out to the loading latch module 21.

[0026] Furthermore, the plasma processing system 1 includes a control unit 80. In one embodiment, the control unit 80 processes computer-executable commands to cause the plasma processing system 1 to perform the various processes described herein. The control unit 80 may be configured to control other elements of the plasma processing system 1 in a manner that executes the various processes described herein. In one embodiment, part or all of the control unit 80 may be included in other elements of the plasma processing system 1. Also, in one embodiment, the control unit 80 processes computer-executable commands to cause the processing module 60 to perform the various processes described herein. The control unit 80 may be configured to control other elements of the processing module 60 in a manner that executes the various processes described herein. In one embodiment, part or all of the control unit 80 may be included in other elements of the processing module 60. The control unit 80 may, for example, include a computer 90. The computer 90 may, for example, include a processing unit (CPU: Central Processing Unit) 91, a memory unit 92, and a communication interface 93. The processing unit 91 can be configured to perform various control actions based on the program stored in the memory unit 92. The memory unit 92 may include RAM (Random Access Memory), ROM (Read Only Memory), HDD (Hard Disk Drive), SSD (Solid State Drive), or combinations thereof. The communication interface 93 can communicate with other elements of the plasma processing system 1 via communication lines such as LAN (Local Area Network).

[0027] <Wafer Processing of Plasma Processing System 1> Next, the wafer processing performed using the plasma processing system 1 configured as described above will be explained.

[0028] First, the wafer W is taken out from the desired wafer transfer box 31 by the transfer mechanism 40 and transferred into the loading latch module 20. Then, the loading latch module 20 is sealed and depressurized. Then, the interior of the loading latch module 20 is connected to the interior of the transfer module 50.

[0029] Subsequently, the wafer W is held by the conveying mechanism 70 and conveyed from the loading locking module 20 to the transmission module 50.

[0030] Next, the gate valve 61 is opened, and the wafer W is moved into the desired processing module 60 by the conveying mechanism 70. Afterward, the gate valve 61 is closed, and the wafer W is processed as desired in the processing module 60. Furthermore, the processing of the wafer W in the processing module 60 will be described below.

[0031] Then, the gate valve 61 is opened, and the wafer W is removed from the self-processing module 60 by the conveying mechanism 70. Afterward, the gate valve 61 is closed.

[0032] Subsequently, the wafer W is moved into the loading latch module 21 by the conveying mechanism 70. When the wafer W is moved into the loading latch module 21, the loading latch module 21 is sealed and the atmosphere is released. Afterward, the interior of the loading latch module 21 is connected to the interior of the carrier module 30.

[0033] Subsequently, the wafer W is held by the conveying mechanism 40 and returned from the loading locking module 21 via the carrier module 30 and housed in the desired wafer transport box 31. At this point, a series of wafer processing in the plasma processing system 1 is completed.

[0034] <Processing Module 60> Next, the processing module 60 will be described using FIG2. FIG2 is a longitudinal sectional view showing the general structure of the processing module 60.

[0035] As shown in FIG2, the processing module 60 includes a plasma processing chamber 100 as a processing container, gas supply units 120 and 130, an RF (Radio Frequency) power supply unit 140, and an exhaust system 150. Furthermore, the processing module 60 includes a wafer support stage 101 as a substrate support unit and an upper electrode 102.

[0036] The wafer support stage 101 is disposed in the lower region of the plasma processing space 100s within the plasma processing chamber 100, which is configured to be capable of depressurization. The upper electrode 102 is disposed above the wafer support stage 101. Furthermore, the upper electrode 102 can function as part of the wall that divides the plasma processing space 100s, specifically, it can function as part of the ceiling of the plasma processing chamber 100.

[0037] The wafer support stage 101 is configured to support the wafer W within a plasma processing space of 100s. In one embodiment, the wafer support stage 101 includes a lower electrode 103, an electrostatic chuck 104, an insulator 105, and feet 106, and is provided with a lifter 107. Furthermore, the wafer support stage 101 includes a temperature adjustment unit configured to adjust the temperature of the electrostatic chuck 104 (e.g., the temperature of its central upper surface 1041). The temperature adjustment unit includes, for example, a heater, a flow path, or a combination thereof. A temperature-regulating fluid such as a refrigerant or heat transfer gas flows in the flow path.

[0038] The lower electrode 103 is formed of a conductive material such as aluminum and is fixed to the insulator 105. In one embodiment, a flow path 108 for the temperature-regulating fluid, which constitutes part of the temperature adjustment section, is formed inside the lower electrode 103. The temperature-regulating fluid is supplied to the flow path 108, for example, from a cooler unit (not shown) disposed outside the plasma processing chamber 100. The temperature-regulating fluid supplied to the flow path 108 is returned to the cooler unit. For example, by circulating low-temperature brine as the temperature-regulating fluid in the flow path 108, the electrostatic chuck 104, the wafer W placed on the electrostatic chuck 104, and the edge ring E can be cooled to a specific temperature. Also, for example, by circulating high-temperature brine as the temperature-regulating fluid in the flow path 108, the electrostatic chuck 104, the wafer W placed on the electrostatic chuck 104, and the edge ring E can be heated to a specific temperature.

[0039] The electrostatic chuck 104 is configured to hold the wafer W by electrostatic force and is disposed on the lower electrode 103. In one embodiment, the upper surface of the electrostatic chuck 104 is formed such that the upper surface of the central portion is higher than the upper surface of the peripheral portion. The upper surface 1041 of the central portion of the electrostatic chuck 104 serves as a wafer mounting surface for placing the wafer W, and the upper surface 1042 of the peripheral portion of the electrostatic chuck 104 serves as a ring mounting surface for placing the edge ring E. The edge ring E is a ring-shaped component in plan view, arranged to surround the wafer W placed on the upper surface 1041 of the central portion of the electrostatic chuck 104 and adjacent to the wafer W.

[0040] The electrostatic chuck 104 is an example of a fixing part that fixes the wafer W to the upper surface 1041 of the central part of the electrostatic chuck 104, i.e., the wafer mounting surface. An electrode 109 is provided in the central part of the electrostatic chuck 104.

[0041] A DC voltage from a DC power supply (not shown) is applied to the electrode 109. The electrostatic force generated therefrom is used to adsorb and hold the wafer W on the upper surface 1041 of the central portion of the electrostatic chuck 104. In one embodiment, the electrostatic chuck 104 is configured to also be able to adsorb and hold the edge ring E by electrostatic force, and is provided with an electrode (not shown) for holding the edge ring E on the wafer support stage 101 by electrostatic adsorption. In another embodiment, a gas supply hole (not shown) is formed on the upper surface 1042 of the peripheral portion of the electrostatic chuck 104 to supply a heat transfer gas such as He gas to the back side of the edge ring E placed on the upper surface 1042. Heat transfer gas from a gas supply unit (not shown) is supplied from the gas supply hole. The gas supply unit may include one or more gas sources and one or more pressure controllers. In one embodiment, the gas supply unit is configured, for example, to supply heat transfer gas from the gas source to the gas supply hole via the pressure controller.

[0042] Furthermore, the central portion of the electrostatic chuck 104 is, for example, formed with a diameter smaller than that of the wafer W. When the wafer W is placed on the upper surface (hereinafter, the wafer mounting surface) 1041 of the central portion of the electrostatic chuck 104, the peripheral portion of the wafer W extends from the central portion of the electrostatic chuck 104. Moreover, the edge ring E, for example, has a stepped upper portion, with the upper surface of the outer peripheral portion being higher than the upper surface of the inner peripheral portion. The inner peripheral portion of the edge ring E is formed to be recessed below the peripheral portion of the wafer W extending from the central portion of the electrostatic chuck 104.

[0043] A heater (specifically, a resistive heating element) constituting part of the temperature adjustment mechanism may also be provided inside the electrostatic chuck 104. By energizing the heater, the electrostatic chuck 104 and the wafer W placed on the electrostatic chuck 104 can be heated to a specific temperature. In this case, the electrostatic chuck 104 may have, for example, a configuration in which the wafer adsorption electrode 109 and the edge ring adsorption electrode are sandwiched between an insulating material containing an insulating material and the heater is embedded therein. Furthermore, the central portion of the electrostatic chuck 104 where the wafer adsorption electrode 109 is provided and the peripheral portion of the electrostatic chuck 104 where the edge ring adsorption electrode is provided may be integrally formed or may be separate components.

[0044] The insulator 105 is a circular plate-shaped component made of ceramic or the like, used to fix the lower electrode 103. The insulator 105 is, for example, formed to have the same diameter as the lower electrode 103.

[0045] The foot 106 is a cylindrical component made of ceramic or the like, which supports the electrostatic chuck 104 via the lower electrode 103 and the insulator 105. The foot 106 is formed, for example, to have an outer diameter equal to that of the insulator 105, supporting the periphery of the insulator 105.

[0046] The lifter 107 is a lifting member that moves up and down relative to the wafer mounting surface 1041 of the electrostatic chuck 104, and is, for example, formed in a columnar shape. When the lifter 107 rises, its upper end protrudes from the wafer mounting surface 1041, thereby supporting the wafer W. The lifter 107 enables the wafer W to be transferred between the electrostatic chuck 104 and the transfer arm 71 of the transfer mechanism 70. Furthermore, three or more lifters 107 are provided at intervals between each other and are arranged to extend in the vertical direction.

[0047] The lifting devices 107 are respectively connected to the support members 110 that support the lifting devices 107. Furthermore, the support members 110 are connected to the drive unit 111, which generates a driving force to raise and lower the support members 110, thereby raising and lowering the plurality of lifting devices 107. The drive unit 111 has, for example, a motor (not shown) as the drive source for generating the aforementioned driving force.

[0048] The lifter 107 is inserted into a through hole 112 that opens at the upper end of the wafer mounting surface 1041 of the electrostatic chuck 104. The through hole 112 is formed, for example, through the central part, the lower electrode 103, and the insulator 105 of the electrostatic chuck 104. The lifter 107, the support member 110, and the drive unit 111 constitute a lifting mechanism for raising and lowering the wafer W relative to the wafer mounting surface 1041.

[0049] The aforementioned upper electrode 102 also functions as a cluster nozzle for supplying various gases from the gas supply units 120 and 130 to the plasma processing space 100s. In one embodiment, the upper electrode 102 has a gas inlet 102a, a gas diffusion chamber 102b, and a plurality of gas inlets 102c. The gas inlet 102a is in fluid communication with, for example, the gas supply units 120 and 130 and the gas diffusion chamber 102b. The plurality of gas inlets 102c are in fluid communication with the gas diffusion chamber 102b and the plasma processing space 100s. In one embodiment, the upper electrode 102 is configured to supply various gases from the gas inlet 102a to the plasma processing space 100s via the gas diffusion chamber 102b and the plurality of gas inlets 102c.

[0050] The gas supply unit 120 may include one or more gas sources 121 and one or more flow controllers 122. In one embodiment, the gas supply unit 120 is configured, for example, to supply one or more types of process gases (including gases used to remove the heat transfer layer D described below) from their respective gas sources 121 to the gas inlet 102a via their respective flow controllers 122. Each flow controller 122 may include, for example, a mass flow controller or a pressure-controlled flow controller. Furthermore, the gas supply unit 120 may include one or more flow modulation devices that modulate or pulse the flow rate of one or more types of process gases.

[0051] The gas supply unit 130 may include one or more gas sources 131 and one or more flow controllers 132. In one embodiment, the gas supply unit 130 is configured, for example, to supply gas containing one or more raw materials that are the raw materials for the heat transfer layer D from their respective gas sources 131 to the gas inlet 102a via their respective flow controllers 132. Each flow controller 132 may include, for example, a mass flow controller or a pressure-controlled flow controller. Furthermore, the gas supply unit 130 may include one or more flow modulation devices that modulate or pulse the flow rate of the gas used to form the heat transfer layer. The gas containing the raw materials supplied from the gas supply unit 130 forms, for example, a liquid heat transfer layer D on the wafer mounting surface 1041 of the wafer support stage 101. Therefore, the gas supply section 130 can function as at least a part of the heat transfer layer forming section configured to form a heat transfer layer D on the wafer mounting surface 1041.

[0052] The RF power supply unit 140 is configured to supply RF power, such as one or more RF signals, to the lower electrode 103, the upper electrode 102, or one or more electrodes, such as both the lower electrode 103 and the upper electrode 102. In this way, plasma is generated by one or more processing gases supplied to the plasma processing space 100s. Therefore, the RF power supply unit 140 can function as at least a part of a plasma generation unit configured to generate plasma from one or more processing gases in the plasma processing chamber 100.

[0053] Furthermore, RF power can also be supplied by the RF power supply unit 140 as described above, and plasma can be generated from one or more heat transfer layer forming gases supplied to the plasma processing space 100s. Therefore, the RF power supply unit 140 can function as at least part of other plasma generating units configured to generate plasma from a gas containing one or more raw material gases in the plasma processing chamber 100.

[0054] The RF power supply unit 140 includes, for example, two RF generation units 141a and 141b and two matching circuits 142a and 142b. In one embodiment, the RF power supply unit 140 is configured to supply a first RF signal from the first RF generation unit 141a to the lower electrode 103 via the first matching circuit 142a. For example, the first RF signal may have a frequency in the range of 27 MHz to 100 MHz.

[0055] In another embodiment, the RF power supply unit 140 is configured to supply a second RF signal from the second RF generation unit 141b to the lower electrode 103 via the second matching circuit 142b. For example, the second RF signal may have a frequency in the range of 400 kHz to 13.56 MHz. Alternatively, a voltage pulse other than RF may be supplied instead of the second RF signal. The voltage pulse may be a negative DC voltage. In another example, the voltage pulse may be a triangular wave or a pulse.

[0056] Furthermore, although the figures are omitted, other embodiments can be considered in this invention. For example, in an alternative embodiment, the RF power supply unit 140 may be configured to supply a first RF signal from the RF generation unit to the lower electrode 103, a second RF signal from another RF generation unit to the lower electrode 103, and a third RF signal from yet another RF generation unit to the lower electrode 103. In addition, in other alternative embodiments, a DC (Direct Current) voltage may be applied to the upper electrode 102.

[0057] Furthermore, in various embodiments, the amplitude of one or more RF signals (i.e., the first RF signal, the second RF signal, etc.) may be pulsed or modulated. Amplitude modulation may include pulsed RF signal amplitude between an on state and an off state, or between two or more different on states.

[0058] The exhaust system 150 may be connected, for example, to an exhaust port 100e located at the bottom of the plasma processing chamber 100. The exhaust system 150 may include a pressure valve and a vacuum pump. The vacuum pump may include a turbomolecular pump, a roughing pump, or a combination thereof.

[0059] <Wafer Processing by Processing Module 60> Next, an example of wafer processing performed using processing module 60 will be described using Figures 3 to 8. Figure 3 is a flowchart illustrating an example of the wafer processing described above. Figures 4 to 8 are diagrams showing the state of processing module 60 in the wafer processing described above. Furthermore, the following processing is performed under the control of control unit 80.

[0060] For example, firstly, as shown in FIG3, a heat transfer layer D is formed on the wafer mounting surface 1041 of the wafer support stage 101 (step S1).

[0061] More specifically, firstly, as shown in FIG4, a raw material gas containing a liquid heat transfer layer D is supplied from the gas supply section 130 to the interior of the plasma processing chamber 100, which has been depressurized to a specific vacuum degree by the exhaust system 150.

[0062] In this embodiment, the liquid constituting the heat transfer layer D remains in a liquid state even at low pressure and low temperature, therefore, the vapor pressure is low and the melting point is low. Furthermore, as described below, in this embodiment, the wafer W is separated by the heat transfer layer D and placed on the wafer mounting surface 1041. Therefore, the surface tension of the liquid constituting the heat transfer layer D is high, preventing the liquid constituting the heat transfer layer D from flowing back to the front surface, i.e., the upper surface, of the wafer W during placement. The liquid constituting the heat transfer layer D can be an ionic liquid. Moreover, "liquid" also includes sols or gels in which the liquid is used as a dispersion medium.

[0063] The raw material gas of the heat transfer layer D includes, for example, at least one of B (boron) or C (carbon) which constitutes the atoms of the heat transfer layer D, and at least one of H (hydrogen), N (nitrogen) or O (oxygen) which constitutes the gaseous components. Furthermore, the raw material gas of the heat transfer layer D preferably contains components that do not hinder plasma processing.

[0064] As described above, a gas containing a raw material gas is supplied, and high-frequency power HF for plasma generation is supplied from the RF power supply unit 140 to the lower electrode 103. Thereby, the raw material gas is excited to generate plasma P1. Then, by the action of the generated plasma P1, a liquid heat transfer layer D is formed on the wafer mounting surface 1041, etc. After the heat transfer layer D is formed, the supply of high-frequency power HF from the RF power supply unit 140 and the supply of the gas containing the raw material gas from the gas supply unit 130 are stopped.

[0065] Next, as shown in FIG. 5, the wafer W is placed on the wafer mounting surface 1041 of the wafer support stage 101 (step S2). Specifically, the wafer W is moved into the plasma processing chamber 100 by the transfer mechanism 70, and the heat transfer layer D, which is separated by liquid, is placed on the wafer mounting surface 1041 of the electrostatic chuck 104 by the lifting and lowering of the lifter 107. Subsequently, the interior of the plasma processing chamber 100 is depressurized to a specific vacuum level by the exhaust system 150.

[0066] Next, the heat transfer layer D formed inside the plasma processing chamber 100, excluding the wafer mounting surface 1041, is removed (step S3).

[0067] Specifically, as shown in FIG6, a removal gas for removing the heat transfer layer D is supplied from the gas supply unit 120 to the plasma processing space 100s via the upper electrode 102, and high-frequency power HF for plasma generation is supplied from the RF power supply unit 140 to the lower electrode 103. Thereby, the removal gas is excited to generate plasma P2. Then, the heat transfer layer D formed on the portion other than the wafer mounting surface 1041 (e.g., the upper surface and outer peripheral surface of the edge ring E, or the lower surface of the upper electrode 102, etc., the inner wall surface of the plasma processing chamber 100) is removed by the action of the generated plasma P2. Furthermore, the heat transfer layer D formed on the wafer mounting surface 1041 is covered by the wafer W and is not exposed to the plasma P2, therefore it is not removed. After the heat transfer layer D is removed, the supply of high-frequency power HF from the RF power supply unit 140 and the supply of removal gas from the gas supply unit 120 are stopped.

[0068] Next, the wafer W on the wafer mounting surface 1041 where the heat transfer layer D is formed is subjected to plasma treatment such as etching or film formation (step S4).

[0069] Specifically, as shown in FIG7, processing gas is supplied from the gas supply unit 120 to the plasma processing space 100s via the upper electrode 102, and high-frequency power HF for plasma generation is supplied from the RF power supply unit 140 to the lower electrode 103. Thereby, the processing gas is excited to generate plasma P3. At this time, high-frequency power LF for ion feeding can also be supplied from the RF power supply unit 140. Then, plasma processing is performed on the wafer W by the action of the generated plasma P3.

[0070] Furthermore, in plasma processing, the wafer mounting surface 1041 is adjusted to a specific temperature by the temperature-regulating fluid flowing through the flow path 108, thereby regulating the temperature of the wafer W. Also, in plasma processing, a liquid-interspersed heat transfer layer D is placed on the wafer mounting surface 1041, and the heat transfer layer D is composed of a freely deformable liquid. Therefore, the lower surface, i.e., the back surface, of the wafer W is in close contact with the heat transfer layer D. Moreover, since the heat transfer layer D is a liquid, its thermal conductivity is higher than that of heat transfer gases such as He. Therefore, when using a liquid heat transfer layer D, compared to the case where heat transfer gases such as He flow between the wafer mounting surface 1041 and the back surface of the wafer W as previously described, the temperature of the wafer W can be adjusted more efficiently via the wafer mounting surface 1041. Specifically, even if there is a large amount of heat input from plasma P3 to wafer W during plasma processing, the temperature of wafer W can be maintained at a constant level by adjusting the temperature of wafer mounting surface 1041. Furthermore, when the set temperature of wafer W changes during plasma processing, the temperature of wafer W can be immediately adjusted to the changed set temperature by adjusting the temperature of wafer mounting surface 1041.

[0071] In plasma processing, to further improve the contact between the heat transfer layer D and the lower surface of the wafer W, the wafer W can be held and fixed on the wafer support stage 101 (specifically, the wafer mounting surface 1041). For example, the wafer W can be held on the wafer mounting surface 1041 by the electrostatic force generated by the electrostatic chuck 104. More specifically, a DC voltage can be applied to the electrode 109 of the electrostatic chuck 104, and the wafer W can be electrostatically attached to the electrostatic chuck 104 by the electrostatic force. By holding it as described above, the temperature of the wafer W can be adjusted more efficiently. Furthermore, the wafer W can also be held on the wafer support stage 101 by electrostatic force or the like in the heat transfer layer D removal process in step S3. Furthermore, when using electrostatic force to hold the wafer W on the wafer support stage 101, the degree of contact between the wafer W and the wafer support stage 101 can also be controlled by electrostatic force, thereby controlling the heat loss of the wafer support stage 101 from the wafer W.

[0072] Similarly, in plasma processing, the edge ring E can be held and fixed to the wafer support stage 101. For example, a DC voltage can be applied to the electrode (not shown) for edge ring adsorption provided on the electrostatic chuck 104, and the edge ring E can be electrostatically adsorbed onto the electrostatic chuck 104 by electrostatic force. Furthermore, in plasma processing, heat transfer gas can be supplied from the gas supply hole (not shown) formed on the upper surface 1042 of the peripheral portion of the electrostatic chuck 104 toward the back side of the edge ring E.

[0073] The removal of the heat transfer layer D in step S3 and the plasma treatment in step S4 can be performed simultaneously. Furthermore, when the plasma treatment is for film formation, as long as the type of gas introduced into the plasma treatment space for 100s is appropriately selected, the removal of the heat transfer layer D in step S3 and the plasma treatment in step S4 can also be performed simultaneously.

[0074] When plasma processing ends, the supply of high-frequency power HF from the RF power supply unit 140 and the supply of processing gas from the gas supply unit 130 are stopped. When high-frequency power LF is supplied during plasma processing, the supply of high-frequency power LF is also stopped. Furthermore, when the wafer W is held in place by the electrostatic chuck 104 during plasma processing, the holding process is also stopped. Moreover, when the edge ring E is held in place by the electrostatic chuck 104 during plasma processing, and when heat transfer gas is supplied to the back surface of the edge ring E, at least one of these processes may be stopped.

[0075] After plasma processing, the wafer W leaves the wafer mounting surface 1041 and is removed (step S5). Specifically, the wafer W is raised by the elevator 107 and leaves the heat transfer layer D on the wafer mounting surface 1041. Subsequently, the wafer W is transferred from the elevator 107 to the transport mechanism 70 and is removed from the plasma processing chamber 100 by the transport mechanism 70.

[0076] Subsequently, the heat transfer layer D is removed from the wafer mounting surface 1041 (step S6).

[0077] Specifically, as shown in FIG8, a removal gas for removing the heat transfer layer D is supplied from the gas supply unit 120 to the plasma processing space 100s via the upper electrode 102, and high-frequency power HF for plasma generation is supplied from the RF power supply unit 140 to the lower electrode 103. Thereby, the removal gas is excited to generate plasma P2. Then, the heat transfer layer D is removed from the wafer mounting surface 1041 by the action of the generated plasma P2. After the heat transfer layer D is removed, the supply of high-frequency power HF from the RF power supply unit 140 and the supply of removal gas from the gas supply unit 120 are stopped. Thus, a series of wafer processing steps are completed.

[0078] Furthermore, the removal of the heat transfer layer D from the wafer mounting surface 1041 in step S6 may not be performed on each wafer W. That is, the heat transfer layer D on the wafer mounting surface 1041 may be shared among multiple wafers W. When the heat transfer layer D is removed from the wafer mounting surface 1041, the edge ring E may be held and fixed to the wafer support stage 101. For example, a DC voltage may be applied to the electrode (not shown) for edge ring adsorption provided on the electrostatic chuck 104, and the edge ring E may be electrostatically adsorbed onto the electrostatic chuck 104 by electrostatic force. Also, when the heat transfer layer D is removed from the wafer mounting surface 1041, heat transfer gas may be supplied from the gas supply hole (not shown) formed on the upper surface 1042 of the peripheral portion of the electrostatic chuck 104 toward the back side of the edge ring E.

[0079] <Another Example of Heat Transfer Layer D> In the above example, heat transfer layer D is a liquid layer, but heat transfer layer D can also be a solid layer as long as it is freely deformable. Here, "free deformation" refers, for example, to free deformation by the weight of the wafer W itself. Also, when the wafer W is electrostatically adsorbed by the electrostatic chuck 104, "free deformation" can also refer to free deformation when the electrostatic adsorption force acts on the wafer W. Furthermore, heat transfer layer D can also be a combination of liquid and solid layers as long as it is freely deformable.

[0080] That is, the heat transfer layer D is a layer composed of at least one of a liquid layer or a solid layer, and is a freely deformable layer. Furthermore, the heat transfer layer D may also be a solid layer, wherein the uppermost layer in contact with the back side of the wafer W is composed of a liquid layer, a solid layer or a combination thereof and is freely deformable, while the other parts are not deformable.

[0081] The solid constituting the heat transfer layer D may have an elastic modulus that allows it to deform freely by the weight of the wafer W itself, and may also have an elastic modulus that allows it to deform freely when electrostatic adsorption forces are applied to the wafer W. More specifically, the solid constituting the heat transfer layer D may be an elastic polymer material, i.e., an elastomer.

[0082] <Effects, etc.> As described above, in this embodiment, a heat transfer layer D, composed of at least one liquid layer or solid layer and capable of free deformation, is formed on the wafer mounting surface 1041 of the wafer support stage 101. Plasma processing is then performed on the wafer W on the wafer mounting surface 1041 on which the heat transfer layer D is formed. Since the heat transfer layer D is composed of at least one liquid layer or solid layer, its thermal conductivity is higher than that of a heat transfer layer composed of a heat transfer gas. Furthermore, because the heat transfer layer D is freely deformable, it can be in close contact with the lower surface of the wafer W. Therefore, according to this embodiment, heat exchange between the wafer W and the wafer mounting surface 1041 can be performed efficiently via the heat transfer layer D. Therefore, during plasma processing, the temperature of the wafer W can be efficiently adjusted via the wafer mounting surface 1041. Specifically, during plasma processing, the wafer W can be efficiently heated through the heat transfer layer D via the wafer mounting surface 1041.

[0083] Furthermore, according to this embodiment, as described above, heat exchange can be carried out efficiently between the wafer W and the wafer mounting surface 1041 via the heat transfer layer D. Therefore, even if there is a temperature difference between the two immediately after the wafer W is placed on the wafer mounting surface 1041, the temperature difference can be eliminated at high speed.

[0084] Furthermore, in this embodiment, as described above, in plasma processing and the like, the wafer W can also be held on the wafer mounting surface 1041 by the electrostatic force generated by the electrostatic chuck 104. This allows for closer contact between the heat transfer layer D and the lower surface of the wafer W, thereby further improving the efficiency of heat dissipation from the wafer W via the wafer mounting surface 1041 and the heat transfer layer D, or the heating efficiency of the wafer W. Moreover, as described above, by holding the wafer W with the electrostatic chuck 104, even if the wafer W warps, the heat transfer layer D can still maintain close contact with the lower surface of the wafer W. Therefore, even if the wafer W warps, heat dissipation from the wafer W or heating of the wafer W can be achieved efficiently.

[0085] <Example of the variation in the shape of the heat transfer layer D formed by the raw material gas> In the above example, plasma is used to form the heat transfer layer D from the raw material gas, but the shape of the heat transfer layer D formed by the raw material gas is not limited to this.

[0086] For example, the portion of the heat transfer layer D to be formed can be cooled, and at least one of the following processes—liquefaction or solidification (i.e., condensation or sublimation) of the raw material gas—can be performed to form the heat transfer layer D. Specifically, a raw material gas that liquefies or solidifies in a vacuum below a specific temperature can be used to cool the wafer mounting surface 1041 to below a specific temperature, thereby forming the heat transfer layer D on the wafer mounting surface 1041. More specifically, a raw material gas that liquefies or solidifies at a temperature lower than the set temperature of the plasma processing chamber 100 can be used to cool the temperature of the wafer mounting surface 1041 to below the temperature at which it liquefies or solidifies. In this way, the heat transfer layer D can be selectively formed only on the wafer mounting surface 1041 and not on the edge ring E, etc. As a result, the process of removing the heat transfer layer D formed outside the wafer mounting surface 1041 in step S3 can be omitted, thereby increasing the yield.

[0087] Alternatively, after supplying raw material gas to the plasma processing space 100s within the plasma processing chamber 100, the pressure of the plasma processing space 100s may be increased, thereby forming a heat transfer layer D by at least one of liquefaction or solidification of the raw material gas.

[0088] Furthermore, the heat transfer layer D can be formed by irradiating the raw material gas within the plasma processing space for 100 seconds with light to perform at least one of liquefaction or solidification of the raw material gas. In this case, the light source is disposed outside the plasma processing chamber 100, and the raw material gas within the plasma processing space for 100 seconds is irradiated with light through an optical window (not shown) provided in the plasma processing chamber 100.

[0089] When the heat transfer layer D is formed by plasma or light from the raw material gas in the plasma processing space for 100 seconds, and the wafer mounting surface 1041 and the edge ring E or the inner wall of the plasma processing chamber 100 are made of different materials, the following can also be used as the raw material gas: That is, as the raw material gas, a substance that forms the heat transfer layer D by plasma or light generated from the raw material gas can be used that does not adhere to the edge ring E or the inner wall of the plasma processing chamber 100 but is selectively adsorbed only onto the wafer mounting surface 1041. In this way, the heat transfer layer D can be selectively formed only on the wafer mounting surface 1041, and therefore, the process of removing the heat transfer layer D formed outside the wafer mounting surface 1041 in step S3 can be omitted.

[0090] Alternatively, after a solid layer is formed on the wafer mounting surface 1041 by using plasma or light, the wafer W mounted on the wafer mounting surface 1041 can be electrostatically adsorbed by an electrostatic chuck 104. In this way, the wafer W can be used to pressurize the solid layer to liquefy it and form a liquid heat transfer layer D.

[0091] <Example of the state of the heat transfer layer D on the wafer mounting surface 1041> The heat transfer layer D may be formed, for example, on the entire wafer mounting surface 1041, including the central region and the peripheral region of the wafer mounting surface 1041. However, the heat transfer layer D may also be formed only in a portion of the wafer mounting surface 1041. For example, when it is necessary to further absorb or heat the central portion of the wafer W, the heat transfer layer D may be formed only in the central region of the wafer mounting surface 1041 facing the central portion of the wafer W. Similarly, for example, when it is necessary to further absorb or heat the peripheral portion of the wafer W, the heat transfer layer D may be formed only in the peripheral region of the wafer mounting surface 1041 facing the peripheral portion of the wafer W.

[0092] A method for forming a heat transfer layer D only in a portion of the wafer mounting surface 1041 is described below. That is, a raw material gas that liquefies or solidifies in a vacuum below a specific temperature can be used to cool only the target portion of the wafer mounting surface 1041 to below a specific temperature, thereby forming a heat transfer layer D only in the target portion of the wafer mounting surface 1041.

[0093] Furthermore, the heat transfer layer D may cover the entire wafer mounting surface 1041, including the central and peripheral regions, and have a uniform thickness, but the thickness may also vary within the wafer mounting surface 1041. For example, when it is necessary to further absorb or heat the central portion of the wafer W, the heat transfer layer D may be thinner in the central region of the wafer mounting surface 1041 facing the central portion of the wafer W than in the peripheral region. Similarly, when it is necessary to further absorb or heat the peripheral portion of the wafer W, the heat transfer layer D may be thinner in the peripheral region of the wafer mounting surface 1041 facing the peripheral portion of the wafer W than in the central region. In this way, by making the heat transfer layer D thinner only in a portion of the wafer mounting surface 1041, the heat exchange efficiency between the wafer mounting surface 1041 and the wafer W can be different in the plane. For example, the heat exchange efficiency can be improved only in a portion of the wafer mounting surface 1041, such as the central region.

[0094] A method for making the thickness of the heat transfer layer D different within the plane of the wafer mounting surface 1041 is described below. That is, by making the temperature of a portion of the wafer mounting surface 1041 at the time of forming the heat transfer layer D different from the temperature of other regions, the thickness of the heat transfer layer D can be made different within the plane of the wafer mounting surface 1041.

[0095] <Examples of Variations in the Supply Form of Raw Material Gas> Figures 9 to 12 are diagrams illustrating examples of variations in the supply form of raw material gas. Furthermore, Figure 10 shows a cross-section of the wafer support stage that differs from those in Figure 4. In the above examples, the supply of raw material gas to the plasma processing space 100s is performed via the upper electrode 102, which is also used to supply processing gas. However, it can also be performed via a wall that constitutes the plasma processing space 100s, which is different from the upper electrode 102 of the plasma processing chamber 100. For example, as shown in Figure 9, a gas inlet 200, which is in fluid communication with the plasma processing space 100s and fluidly connected to the gas supply unit 130A, can be provided on the side wall of the plasma processing chamber 100A. The raw material gas from the gas supply unit 130A is then supplied to the plasma processing space 100s through this side wall (specifically, the gas inlet 200). Alternatively, a gas outlet different from the gas inlet 102c used to supply processing gas can be provided on the upper electrode 102, through which the raw material gas from the gas supply unit is supplied to the plasma processing space 100s.

[0096] The supply of raw material gas to the plasma processing space 100s can also be performed via a wafer support stage. For example, as shown in FIG10, a flow path 210 can be provided on the wafer support stage 101B, with one end open to the wafer mounting surface 104B1 and the other end fluidly connected to the gas supply section 130B, through which the raw material gas from the gas supply section 130B is supplied to the plasma processing space 100s. Furthermore, the flow path 210 is formed, for example, across the electrostatic chuck 104B, the lower electrode 103B, and the insulator 105B. Also, for example, as shown in FIG11, a gas outlet 220 can be provided on the lift 107C, which is fluidly connected to the plasma processing space 100s and to the gas supply section (not shown), through which the raw material gas from the gas supply section (not shown) is supplied to the plasma processing space 100s.

[0097] Furthermore, the supply of raw material gas to the plasma processing space 100s can also be performed via a transport mechanism that transports the wafer W to the processing module 60. For example, as shown in FIG12, a nozzle 75 fluidly connected to a gas supply unit (not shown) can be provided on the transport arm 71D of the transport mechanism 70D. When the transport arm 71D is inserted into the plasma processing chamber 100, the raw material gas from the gas supply unit (not shown) is supplied to the plasma processing space 100s via the nozzle 75.

[0098] Furthermore, multiple raw material gases can be used, and each raw material gas can be supplied to the plasma processing space 100s from different parts, so that the multiple reactive gases react with each other to form a heat transfer layer D. For example, one raw material gas can be supplied through the gas inlet 102c, and another raw material gas can be supplied through the gas inlet 200 (see Figure 9), and the heat transfer layer D is formed by the reaction of the one raw material gas and the other raw material gas in the plasma processing space 100s.

[0099] (Example of the form of removing the heat transfer layer D formed outside the wafer mounting surface) In the above example, plasma is used to remove the heat transfer layer D formed outside the wafer mounting surface, but the form of removal is not limited to this.

[0100] For example, the portion of the plasma processing chamber 100 where the heat transfer layer D is formed, excluding the wafer mounting surface (e.g., the inner wall of the plasma processing chamber 100), can be heated to vaporize and selectively remove the heat transfer layer D formed on that portion. Alternatively, the heat transfer layer D can be selectively removed by irradiating the portion of the plasma processing chamber 100 with light to vaporize it. In this case, the light source is, for example, disposed outside the plasma processing chamber 100, and irradiates the portion of the heat transfer layer D formed inside the plasma processing chamber 100 excluding the wafer mounting surface with light through an optical window provided in the plasma processing chamber 100. Furthermore, the plasma processing chamber 100 can be vented while the wafer W is mounted on the wafer mounting surface to vaporize and remove the heat transfer layer D formed on the portion excluding the wafer mounting surface. Specifically, the heat transfer layer D formed on the portion other than the wafer mounting surface can be exposed to a low pressure (e.g., below vapor pressure) by venting the plasma processing chamber 100 to a low pressure while the wafer W is mounted on the wafer mounting surface, thereby vaporizing and removing it. In this case, the wafer W can also be fixed to the wafer mounting surface to suppress the vaporization of the heat transfer layer D formed on the wafer mounting surface. For example, a DC voltage can be applied to the electrode 109 of the electrostatic chuck 104, causing the wafer W to be electrostatically attracted to the electrostatic chuck 104 by electrostatic force. Furthermore, when removing the heat transfer layer D formed on the portion other than the wafer mounting surface by heat or light, the wafer W may not be mounted on the wafer mounting surface. In this case, the wafer mounting surface can also be cooled. This can suppress the vaporization of the heat transfer layer D formed on the wafer mounting surface.

[0101] (Example of the variation in the form of removing the heat transfer layer D formed on the wafer mounting surface) In the above example, plasma is used to remove the heat transfer layer D formed on the wafer mounting surface, but the form of removal is not limited to this.

[0102] For example, the heat transfer layer D formed on the wafer mounting surface can also be removed by heating the wafer mounting surface to vaporize it. Alternatively, the heat transfer layer D formed on the wafer mounting surface can be removed by irradiating it with light. In this case, the light source is, for example, disposed outside the plasma processing chamber 100, and irradiates the heat transfer layer D formed on the wafer mounting surface through an optical window provided in the plasma processing chamber 100. Furthermore, the heat transfer layer D formed on the wafer mounting surface can also be removed by venting exhaust gas from the plasma processing chamber 100 to vaporize it. Specifically, the heat transfer layer D formed on the wafer mounting surface can also be removed by exposing the plasma processing chamber 100 to a low pressure (e.g., below vapor pressure) to a reduced pressure environment, thereby vaporizing it.

[0103] Furthermore, when the heat transfer layer D does not peel off from the wafer W because it is composed only of a solid, the following process can also be performed. That is, the heat transfer layer D can be fixed to the lower surface of the wafer W by means of its adhesive force, etc. After plasma processing, the wafer W with the heat transfer layer D fixed thereon is raised and removed from the wafer mounting surface, and then it is removed from the plasma processing chamber 100. In this way, the heat transfer layer D formed on the wafer mounting surface can also be removed. In this case, the heat transfer layer D on the lower surface of the wafer W can also be removed in the transfer module 50 or in the loading locking modules 20, 21 or in the carrier module 30. Removal can be performed by heat or light, for example. Furthermore, the wafer W with the heat transfer layer D fixed to its lower surface can also be directly housed in the wafer transport box 31.

[0104] (Another example of the state within the plasma processing chamber 100 during the formation of the heat transfer layer D) Figure 13 is a diagram illustrating another example of the state within the plasma processing chamber 100 during the formation of the heat transfer layer D. In the above example, the wafer W is not located within the plasma processing chamber 100 during the formation of the heat transfer layer D, but it may also be located within the plasma processing chamber 100. Specifically, as shown in Figure 13, the wafer W may also be located within the plasma processing chamber 100 and away from the wafer mounting surface 1041 during the formation of the heat transfer layer D. More specifically, the heat transfer layer D may be formed by supplying raw material gas into the plasma processing chamber 100 while the wafer W is supported by the lifter 107 and away from the wafer mounting surface 1041, and by performing at least one of liquefaction or solidification of the raw material gas.

[0105] When forming the heat transfer layer D as in this example, sometimes the heat transfer layer D is formed on the back side (lower surface) of the wafer W, the front side (upper surface) of the wafer W, and the side end face of the wafer W. In this case, the heat transfer layer D formed on the lower surface of the wafer W is not a problem, but the heat transfer layer D formed on other surfaces, especially the heat transfer layer D formed on the upper surface of the wafer W, will hinder plasma processing.

[0106] For example, the heat transfer layer D formed on the upper surface of the wafer W can be selectively removed before plasma processing without removing the heat transfer layer D formed on the wafer mounting surface. That is, by depressurizing the interior of the plasma processing chamber 100 while the wafer W is mounted on the wafer mounting surface where the heat transfer layer D is formed, the heat transfer layer D formed on the upper surface of the wafer W can be selectively removed before plasma processing. Alternatively, while the wafer W is mounted on the wafer mounting surface where the heat transfer layer D is formed, the heat transfer layer D formed on the upper surface of the wafer W can be selectively removed using plasma, heat, or light.

[0107] Furthermore, when the heat transfer layer D formed on the upper surface of the wafer W is removed, the heat transfer layer formed on other redundant parts, that is, the parts other than the upper surface of the wafer W and the wafer mounting surface, can also be removed.

[0108] By selectively removing the heat transfer layer D formed on the upper surface of the wafer W by depressurizing the interior of the plasma processing chamber 100 while the wafer W is placed on the wafer mounting surface where the heat transfer layer D is formed, the wafer W can also be fixed to the wafer mounting surface to suppress the vaporization of the heat transfer layer D formed on the wafer mounting surface. For example, a DC voltage can also be applied to the electrode 109 of the electrostatic chuck 104, and the wafer W can be electrostatically attracted to the electrostatic chuck 104 by electrostatic force.

[0109] Furthermore, as in this example, when the heat transfer layer D is formed while the wafer W is supported by the elevator 107 and separated from the wafer mounting surface 1041, a suppressing part for suppressing the formation of the heat transfer layer D in the elevator 107 can also be provided. For example, when the heat transfer layer D is formed by cooling at least one of liquefaction or solidification of the raw material gas, as the above-mentioned suppressing part, a heater such as a resistive heating element can also be provided in the elevator 107 to make the elevator 107 high temperature.

[0110] <Example of a further variation in the morphology of the heat transfer layer D formed by the raw material gas> In the above examples, at least one of the liquefaction or solidification of the raw material gas is performed, and the heat transfer layer D is directly formed on the wafer mounting surface. Alternatively, the heat transfer layer D can be formed on the wafer mounting surface in the following manner.

[0111] That is, firstly, the liquefaction or solidification of the raw material gas supplied to the plasma processing chamber 100 can be performed by forming a heat transfer layer D on at least the lower surface of the wafer W located within the plasma processing chamber 100, without forming a heat transfer layer D on the wafer mounting surface. Specifically, under the control of the control unit 80, the liquefaction or solidification of the raw material gas supplied from the gas supply unit 130 to the plasma processing chamber 100 can be performed by selectively forming a heat transfer layer D on at least the lower surface of the wafer W supported by the lifter 107 and away from the wafer mounting surface 1041, without forming a heat transfer layer D on the wafer mounting surface. Subsequently, the heat transfer layer D can also be formed on the wafer mounting surface by placing the wafer W with the heat transfer layer D formed on its lower surface. Specifically, under the control of the control unit 80, the elevator 107 can be lowered to place the wafer W with a heat transfer layer formed on its lower surface onto the wafer mounting surface, thereby forming a heat transfer layer D on the wafer mounting surface.

[0112] As described above, the heat transfer layer D can be selectively formed on the wafer W, for example, by pre-cooling it before it is moved into the plasma processing chamber 100 (specifically, before it is supported by the elevator 107). When the wafer W is pre-cooled in this way, the front end, i.e., the upper end, of the elevator 107 can also be formed using a heat insulation material. In this way, the cooling of the elevator 107 due to heat transfer from the wafer W can be suppressed, thereby suppressing the formation of the heat transfer layer D on the elevator 107. Furthermore, the pre-cooling of the wafer W can be performed, for example, within the transfer module 50, or within the loading locking modules 20, 21, or the carrier module 30.

[0113] In this example, the control unit 80, the lifting mechanism of the wafer W including the lifter 107, and the gas supply unit 130 can function as at least a part of the heat transfer layer forming unit configured to form a heat transfer layer D on the wafer mounting surface.

[0114] (Second Embodiment) FIG14 is a longitudinal sectional view showing the general configuration of the processing module of the plasma processing apparatus according to the second embodiment. Furthermore, in FIG14, the wafer support stage is shown in cross-section, and the parts that are different from those in FIG4 are shown. Therefore, the lifting device 107, the support member 110, and the drive unit 111 are omitted. That is, the processing module 60E of FIG14 is the same as the processing module 60 of FIG2, and has the lifting device 107, the support member 110, and the drive unit 111.

[0115] In the first embodiment, the heat transfer layer D is formed by the raw material gas supplied to the plasma processing space 100s. In contrast, in this embodiment, a heat transfer medium consisting of at least one of a liquid medium or a fluid solid medium is supplied to the wafer mounting surface 104E1 via the wafer support stage 101E, and the heat transfer layer D is formed by the aforementioned heat transfer medium.

[0116] Therefore, in the processing module 60E of FIG. 14, a heat transfer medium supply port 300 is formed on the wafer mounting surface 104E1 of the electrostatic chuck 104E of the wafer support stage 101E. For example, a plurality of supply ports 300 are provided on the wafer mounting surface 104E1. A groove 320 may also be provided on the wafer mounting surface 104E1. The groove 320 is formed such that the heat transfer medium diffuses along the wafer mounting surface 104E1 through the groove 320.

[0117] Furthermore, a flow path 310 is provided inside the wafer support stage 101E, with one end in fluid communication with each supply port 300. The other end of the flow path 310 is, for example, in fluid connection with the gas supply section 130E. Also, the flow path 310 is formed to be narrower at the end on the wafer mounting surface 104E1 side (specifically, for example, the portion located inside the electrostatic chuck 104E), and the aforementioned heat transfer medium within the flow path 310 is supplied to the wafer mounting surface 104E1 via the supply port 300 through capillary action. Furthermore, the flow path 310 is formed, for example, across the electrostatic chuck 104E, the lower electrode 103E, and the insulator 105E.

[0118] The gas supply unit 130E may include one or more gas sources 131E and one or more flow controllers 132E. In one embodiment, the gas supply unit 130E is configured, for example, to supply one or more gases used to generate the heat transfer medium (hereinafter, heat transfer medium generating gases) from their respective gas sources 131E to their respective flow controllers 132E to the wafer support stage 101E. Each flow controller 132E may include, for example, a mass flow controller or a pressure-controlled flow controller. Furthermore, the gas supply unit 130E may include one or more flow modulation devices that modulate or pulse the flow rate of one or more heat transfer medium generating gases.

[0119] The heat transfer medium generation gas system supplied from the gas supply unit 130E is cooled within the flow path 310, for example, by the lower electrode 103E which has been cooled by a temperature-regulating fluid, and undergoes liquefaction or solidification, changing into a heat transfer medium composed of at least one of a liquid medium or a fluid solid medium. As described above, the heat transfer medium is supplied to the wafer mounting surface 104E1 via the supply port 300, for example, by capillary action, to form the heat transfer layer D. Therefore, the gas supply unit 130E can function as at least a part of the heat transfer layer forming unit configured to form the heat transfer layer D on the wafer mounting surface 104E1.

[0120] <Wafer Processing by Processing Module 60E> Next, an example of wafer processing performed using processing module 60E will be described using Figures 15 to 19. Figure 15 is a flowchart illustrating an example of the wafer processing described above. Figures 16 to 19 are diagrams showing the state of processing module 60E in the wafer processing described above. Furthermore, the following processing is performed under the control of control unit 80.

[0121] For example, firstly, as shown in Figures 15 and 16, the wafer W is placed on the wafer mounting surface 104E1 of the wafer support stage 101E (step S11). Specifically, the wafer W is moved into the plasma processing chamber 100 by the transfer mechanism 70 and placed on the wafer mounting surface 104E1 of the electrostatic chuck 104E by the lifting mechanism 107. Subsequently, the interior of the plasma processing chamber 100 is depressurized to a specific vacuum level (pressure p1) by the exhaust system 150.

[0122] Subsequently, as shown in FIG17, a heat transfer layer D composed of at least one of a liquid layer or a solid layer and capable of free deformation is formed on the wafer mounting surface 104E1 (step S12). Specifically, a heat transfer medium composed of at least one of a liquid medium or a fluid solid medium is supplied through the wafer mounting surface 104E1 between the wafer mounting surface 104E1 and the back surface of the wafer W to form the heat transfer layer D.

[0123] More specifically, the wafer W is held on the wafer support stage 101E. For example, a DC voltage is applied to the electrode 109 of the electrostatic chuck 104E, and the wafer W is electrostatically attracted to the electrostatic chuck 104E by electrostatic force. At this time, the temperature of the wafer mounting surface 104E1 is adjusted to temperature T1, and therefore, the flow path 310 is also adjusted to temperature T1. Furthermore, temperature T1 is set to a temperature that can effectively carry out the process processing, for example, it is set to be equal to the temperature of the wafer mounting surface 104E1 during the process processing.

[0124] After holding the wafer W on the wafer support stage 101E, a heat transfer medium generating gas is supplied from the gas supply section 130E to the flow path 310 of the wafer support stage 101E at a temperature T2 (>T1) and a pressure p2 (>p1). The heat transfer medium generating gas system supplied to the flow path 310 is cooled to a temperature T1 within the flow path 310, becoming a heat transfer medium composed of at least one of a liquid medium or a fluid solid medium. Furthermore, this heat transfer medium is supplied to the wafer mounting surface 104E1 via the supply port 300, for example, by capillary action. The aforementioned heat transfer medium supplied to the wafer mounting surface 104E1 diffuses along the wafer mounting surface 104E1 by capillary action generated by the gap between the wafer mounting surface 104E1 and the back surface of the wafer W, forming a heat transfer layer D. The heat transfer layer D is formed of a heat transfer medium consisting of at least one of a liquid medium or a solid medium with fluidity. Therefore, like the heat transfer layer D in the first embodiment, it is a layer consisting of at least one of a liquid medium or a solid medium with fluidity and is free to deform.

[0125] Furthermore, if the gap between the wafer mounting surface 104E1 and the back surface of the wafer W is too narrow, the heat transfer medium may sometimes be unable to diffuse along the wafer mounting surface 104E1 due to factors such as the viscosity of the heat transfer medium. Therefore, as described above, by providing a groove 320 on the wafer mounting surface 104E1, the gap between the wafer mounting surface 104E1 and the back surface of the wafer W can be widened, thus allowing the heat transfer medium to diffuse appropriately along the wafer mounting surface 104E1 through capillary action. Alternatively, a heat transfer medium with lower viscosity can be used to facilitate its transfer through capillary action.

[0126] The supply of heat transfer medium to the wafer mounting surface 104E1 (specifically, the supply of heat transfer medium generating gas from the gas supply section 130E) is stopped, for example, when the supply amount reaches a certain amount (specifically, when the supply time of the heat transfer medium generating gas from the gas supply section 130E exceeds a certain time). Furthermore, for example, a monitoring device such as a camera can be used to monitor for leakage of the heat transfer medium between the wafer mounting surface 104E1 and the back surface of the wafer W. When leakage is detected, the supply of heat transfer medium to the wafer mounting surface 104E1 is stopped. In this case, the monitoring device such as a camera is, for example, installed outside the plasma processing chamber 100, and monitoring and taking pictures are performed through an optical window provided in the plasma processing chamber 100.

[0127] Then, the wafer W on the wafer mounting surface 104E1 where the heat transfer layer D is formed is subjected to plasma treatment (step S13). Specifically, the wafer W on which the heat transfer layer D is formed between the wafer mounting surface 104E1 and the wafer is subjected to plasma treatment.

[0128] More specifically, for example, while the wafer W is held on the wafer support stage 101E, as shown in FIG18, processing gas is supplied from the gas supply unit 120 to the plasma processing space 100s via the upper electrode 102, and high-frequency power HF for plasma generation is supplied from the RF power supply unit 140 to the lower electrode 103E. Thereby, the processing gas is excited to generate plasma P3. At this time, high-frequency power LF for ion feeding can also be supplied from the RF power supply unit 140. Then, by the action of the generated plasma P3, plasma processing is performed on the wafer W.

[0129] In plasma processing, the wafer mounting surface 104E1 is adjusted to a specific temperature T1 by a temperature-regulating fluid flowing through the flow path 108, thereby regulating the temperature of the wafer W. Furthermore, in plasma processing, a heat transfer layer D is placed on the wafer mounting surface 104E1 of the wafer W, and as described above, the heat transfer layer D is freely deformable; therefore, the lower surface, i.e., the back surface, of the wafer W is in close contact with the heat transfer layer D. Moreover, the heat transfer layer D is formed of a heat transfer medium, and this heat transfer medium is composed of at least one of a liquid medium or a fluid solid medium; therefore, its thermal conductivity is higher than that of heat transfer gases such as He. Therefore, when using the heat transfer layer D, compared to the case where heat transfer gases such as He flow between the wafer mounting surface 104E1 and the back surface of the wafer W as previously described, the temperature of the wafer W can be adjusted more efficiently via the wafer mounting surface 104E1. Specifically, even if there is a significant heat input from plasma P3 to wafer W during plasma processing, the temperature of wafer W can be maintained at a constant level through temperature adjustment of wafer mounting surface 104E1. Furthermore, when the set temperature of wafer W changes during plasma processing, the temperature of wafer W can be immediately adjusted to the changed set temperature through temperature adjustment of wafer mounting surface 104E1. During plasma processing, when wafer W is held on wafer support stage 101E by electrostatic force, the contact depth between wafer W and wafer support stage 101E can be controlled by electrostatic force, thereby controlling heat loss from wafer W to wafer support stage 101E.

[0130] Furthermore, during plasma processing, the pressure p3 applied to the heat transfer layer D also includes the pressure applied to the heat transfer layer D by electrostatically adsorbing the wafer W, which is 0.1 Torr to 100 Torr. Also, during plasma processing, a DC voltage can be applied to the electrode for adsorbing the edge ring of the electrostatic chuck 104, thereby causing the edge ring E to be electrostatically adsorbed and held in the electrostatic chuck 104. Furthermore, during plasma processing, heat transfer gas can be supplied from the gas supply hole (not shown) formed on the upper surface 1042 of the peripheral portion of the electrostatic chuck 104 towards the back side of the edge ring E.

[0131] When plasma processing ends, the supply of high-frequency power HF from the RF power supply unit 140 and the supply of processing gas from the gas supply unit 120 are stopped. When high-frequency power LF is supplied during plasma processing, the supply of high-frequency power LF is also stopped. Furthermore, the interior of the plasma processing chamber 100 is depressurized to a specific vacuum level (pressure p1) by the exhaust system 150. The pressure p1 is, for example, less than 0.001 Torr. Moreover, when heat transfer gas is supplied to the back side of the edge ring E, the supply of that heat transfer gas can also be stopped.

[0132] After plasma treatment, the wafer W is removed from the wafer mounting surface 104E1, and the heat transfer layer D is removed (step S14). In one example, the heat transfer layer D is removed by vaporization. Specifically, after the holding of the wafer W on the wafer support stage 101E (e.g., the adsorption holding of the wafer W by the electrostatic chuck 104E) stops, the wafer W is raised by the lift 107, as shown in FIG18, and removed from the wafer mounting surface 104E1. After leaving, the heat transfer layer D is exposed to a depressurized environment, specifically, to an environment with a pressure p1 less than 0.001 Torr, whereby vaporization occurs and it is removed.

[0133] In order to enable this vaporization, the following are used as the heat transfer medium for forming the heat transfer layer D: the medium is a liquid or a fluid solid at a pressure p3 of 0.1 to 100 Torr at a temperature T1, and a gas at a pressure p1 of less than 0.001 Torr at a temperature T1.

[0134] Furthermore, the gas used to generate the heat transfer medium forming the heat transfer layer D may contain, for example, at least one of the constituent atoms of the heat transfer layer D, B (boron) or C (carbon), and at least one of the constituent gas components, H (hydrogen), N (nitrogen), or O (oxygen). Moreover, the gas used to generate the heat transfer medium preferably contains components that do not interfere with plasma processing. Furthermore, when removing the heat transfer layer D from the wafer mounting surface 104E1, at least one of plasma, heat, or light may be used instead of exposure to a reduced pressure environment, or at least one of plasma, heat, or light may be used simultaneously.

[0135] Then, the wafer W is removed (step S15). Specifically, the wafer W is transferred from the elevator 107 to the transport mechanism 70, and is removed from the plasma processing chamber 100 by the transport mechanism 70. At this point, a series of wafer processing steps are completed.

[0136] <Effects, etc.> As described above, in this embodiment, the heat transfer layer D is also composed of at least one of a liquid layer or a solid layer, and therefore has a higher thermal conductivity than a heat transfer layer composed of a heat transfer gas, i.e., a gas. Furthermore, because the heat transfer layer D can freely deform, it can be in close contact with the lower surface of the wafer W. Therefore, according to this embodiment, heat exchange between the wafer W and the wafer mounting surface 104E1 can also be carried out efficiently via the heat transfer layer D. Therefore, during plasma processing, the temperature of the wafer W can be efficiently adjusted via the wafer mounting surface 104E1.

[0137] Furthermore, since the heat transfer medium forming the heat transfer layer D is composed of a liquid or a fluid solid, blockage of the flow path 310 due to the aforementioned heat transfer medium can be suppressed. Moreover, in the above example, when the wafer W is removed from the wafer mounting surface 104E1, the heat transfer layer D vaporizes and is removed; therefore, there is no need to separately perform a process to remove the heat transfer layer D. Thus, increased production output can be achieved.

[0138] <Example of variation in the supply form of heat transfer medium> In the above example, the gas for generating heat transfer medium is supplied from the outside to the wafer support stage 101E and is transformed into heat transfer medium within the wafer support stage 101E. However, the heat transfer medium can also be supplied directly from the outside to the wafer support stage 101.

[0139] Furthermore, in the above example, the heat transfer medium within the wafer support stage 101E is supplied to the wafer mounting surface 104E1 by means of capillary action. Alternatively, the heat transfer medium within the wafer support stage 101E can be supplied to the wafer mounting surface 104E1 by the supply pressure of a gas generating the heat transfer medium of the wafer support stage 101E from the outside or by the supply pressure of the heat transfer medium of the wafer support stage 101E from the outside.

[0140] <Example of Variation of Heat Transfer Medium> When the heat transfer medium inside the wafer support stage 101E is supplied to the wafer mounting surface 104E1 by supplying pressure from the outside to the heat transfer medium of the wafer support stage 101E as described above, the following can also be used as the heat transfer medium: That is, a heat transfer medium mixed with a powder having a higher thermal conductivity than the base material of the heat transfer medium can also be used. Specifically, the powder having a higher thermal conductivity than the base material of the heat transfer medium refers to, for example, carbon nanotube powder.

[0141] Furthermore, when the heat transfer medium inside the wafer support stage 101E is supplied to the wafer mounting surface 104E1 by supplying the heat transfer medium generating gas from the outside to the wafer support stage 101E, a mist containing the aforementioned powder with higher thermal conductivity can also be used as the heat transfer medium generating gas. By cooling the heat transfer medium generating gas within the flow path 310, it can be transformed into a heat transfer medium mixed with powder with higher thermal conductivity, thereby enabling the heat transfer medium to be supplied to the wafer mounting surface 104E1.

[0142] <Specific Example of Groove 320> Figures 20 and 21 are diagrams showing specific examples of groove 320. Sometimes, as shown in Figure 20, a plurality of support pillars 321 supporting the back side of the wafer W are formed on the wafer mounting surface 104E1 of the electrostatic chuck 104E. In this case, for example, the groove 320 is formed in the recesses between the support pillars 321. Also, as shown in Figure 21, a porous body (specifically, for example, porous ceramic) 322 can be disposed in the groove 320 to fill the groove 320. In this way, the shape of the wafer W can be maintained when electrostatically adsorbed by the electrostatic chuck 104E, regardless of the shape of the groove 320. Furthermore, when using the porous body 322, the heat transfer medium moves in the pores of the porous body by capillary action, and therefore can diffuse along the wafer mounting surface 104E1.

[0143] <Another example of the wafer mounting surface in the second embodiment> In this embodiment, the wafer mounting surface may also be composed of a porous body, except for the groove 320 (specifically, for example, the top of the support pillar 321). Furthermore, when the wafer mounting surface does not have a groove 320, the entire wafer mounting surface may be formed of a porous body.

[0144] <Example of heat transfer layer D on wafer mounting surface 104E1> In this embodiment, the heat transfer layer D is formed, for example, on the entire wafer mounting surface 104E1, including the central region and the peripheral region of the wafer mounting surface 104E1. However, the heat transfer layer D may also be formed only in a portion of the wafer mounting surface 104E1. For example, the heat transfer layer D may be formed only in the central region or the peripheral region of the wafer mounting surface 104E1. For example, by forming a groove 320 in advance only in a portion of the wafer mounting surface 104E1, such as the central region, the heat transfer layer D can be formed only in that portion of the region.

[0145] Furthermore, in this embodiment, the heat transfer layer D, for example, covers the entire wafer mounting surface 104E1, including the central and peripheral regions, and has a uniform thickness. However, the thickness may also vary within the wafer mounting surface 104E1. For example, the heat transfer layer D may be thinner only in the central or peripheral regions of the wafer mounting surface 104E1. In this way, the heat exchange efficiency between the wafer mounting surface 104E1 and the wafer W can be made different within the surface, thereby improving the heat exchange efficiency only in the aforementioned portion of the region. Moreover, when a groove 320 is formed on the wafer mounting surface 104E1, by making the depth of the groove 320 different in each region of the wafer mounting surface 104E1, the heat transfer layer D can be thinner only in the central region and other portions of the region.

[0146] Furthermore, when the wafer mounting surface 104E1 is not formed with a groove 320 but with the entire surface formed by a porous body, the same as when the thickness of the porous body is different in each region of the wafer mounting surface 104E1, and the depth of the groove 320 is different in each region of the wafer mounting surface 104E1, can make the heat exchange efficiency between the wafer mounting surface 104E1 and the wafer W different in the surface.

[0147] Furthermore, the heat transfer layer D can also be formed by mixing a high thermal conductivity medium and a low thermal conductivity medium, so that the mixing ratio of the high thermal conductivity medium and the low thermal conductivity medium is different in each region of the wafer mounting surface 104E1. In this way, the heat exchange efficiency between the wafer mounting surface 104E1 and the wafer W can also be different in the plane.

[0148] Furthermore, the density of the groove 320 can also be made different in each region of the wafer mounting surface 104E1. In other words, when the groove 320 is formed by the recesses between the support pillars 321, the density of the support pillars 321 can also be made different in each region of the wafer mounting surface 104E1. In this way, the heat exchange efficiency between the wafer mounting surface 104E1 and the wafer W can also be made different in the plane.

[0149] <Variations of the Second Embodiment> In the above example, the heat transfer layer D is formed after the wafer W is placed on the wafer mounting surface 104E1. However, the heat transfer layer D can also be formed before the wafer W is placed on the wafer mounting surface 104E1. In this case, a medium that exists in the form of at least one of liquid or solid even when the wafer W is not on the wafer mounting surface 104E1 is used as the heat transfer medium. Also, in this case, when the heat transfer layer D is formed, the wafer W can be placed inside the plasma processing chamber 100 and away from the wafer mounting surface 104E1, just as in the example described in FIG13.

[0150] (Third Embodiment) FIG22 is a longitudinal sectional view showing the general configuration of the processing module of the plasma processing apparatus as the third embodiment.

[0151] The processing module 60F in Figure 22 is different from the processing module 60 in Figure 2. It is not supplied with the raw material gas for the heat transfer layer D. Also, unlike the processing module 60E in Figure 14, it is not supplied with the heat transfer medium for forming the heat transfer layer D by the wafer support stage 101.

[0152] In the processing module 60F of FIG22, a heat transfer layer D composed of a liquid layer or a solid layer and capable of free deformation is formed on the wafer mounting surface 1041 of the wafer support stage 101 in the following manner: A wafer W on which the aforementioned heat transfer layer D is previously formed on the back side is placed on the wafer mounting surface 1041 of the wafer support stage 101 via, for example, a lifter 107 under the control of the control unit 80, thereby forming the heat transfer layer D on the wafer mounting surface 1041. Therefore, in this embodiment, the control unit 80 and the lifting mechanism of the wafer W including the lifter 107 can function as at least a part of the heat transfer layer forming section configured to form the heat transfer layer D on the wafer mounting surface 1041.

[0153] The heat transfer layer D is pre-formed on the lower surface of the wafer W, for example, within the transfer module 50, or within the loading locking modules 20, 21, or the carrier module 30. Furthermore, the aforementioned pre-formation may be achieved, for example, by using a gas that liquefies or solidifies below a specific temperature, thereby cooling the lower surface of the wafer W to below that specific temperature to pre-form the heat transfer layer D on the lower surface of the wafer W. Alternatively, a wafer W with a pre-formed heat transfer layer D on its lower surface outside the plasma processing system 1 may be pre-enclosed in the wafer transport box 31 and utilized.

[0154] According to this embodiment, heat exchange can also be carried out efficiently between the wafer W and the wafer mounting surface 1041 via the heat transfer layer D. Therefore, according to this embodiment, the temperature of the wafer W can also be efficiently adjusted via the wafer mounting surface 1041 during plasma processing.

[0155] Furthermore, in this embodiment, the heat transfer layer D may be formed on the entire back side of the wafer W, or it may be formed only in the central region or the peripheral region of the back side of the wafer W. Also, the heat transfer layer D may contain fillers (in one example, powder) with higher thermal conductivity than its base material.

[0156] (Fourth Embodiment) FIG23 is a longitudinal sectional view showing the general configuration of the processing module of the plasma processing apparatus according to the fourth embodiment.

[0157] The processing module 60G in Figure 23 is similar to the processing module 60F in Figure 22. It is not supplied with the raw material gas for the heat transfer layer D, nor is it supplied with the heat transfer medium for forming the heat transfer layer D by the wafer support stage 101.

[0158] In the processing module 60G of FIG23, a heat transfer layer D composed of a liquid layer or a solid layer and capable of free deformation is formed on the wafer mounting surface 1041 of the wafer support stage 101 in the following manner: A tray T, on which a wafer W is mounted and on which the heat transfer layer D is formed, is placed on the wafer mounting surface 1041 of the wafer support stage 101 via, for example, a lifter 107 under the control of the control unit 80, thereby forming the heat transfer layer D on the wafer mounting surface 1041 through the tray T. Therefore, in this embodiment, the control unit 80 and the lifting mechanism of the wafer W including the lifter 107 can also function as at least a part of the heat transfer layer forming part configured to form the heat transfer layer D on the wafer mounting surface 1041.

[0159] Furthermore, the tray T may also be housed in the wafer transport box 31 while the wafer W is placed on the heat transfer layer D.

[0160] In this embodiment, the heat transfer layer D, like in the third embodiment, can be formed on the entire back side of the wafer W, or it can be formed only in the central region or the peripheral region of the back side of the wafer W. Furthermore, the heat transfer layer D may also contain fillers (in one example, powder) with higher thermal conductivity than its base material.

[0161] The material of the tray T is, for example, the same material as the edge ring E. Furthermore, when performing plasma etching as a plasma process in the processing module 60, the material of the tray T can be changed according to the material of the layer to be etched. The thickness of the tray T can also be optimized so that the height of the edge of the wafer W is the desired height. The tray T can also electrically separate the area facing the wafer W from other areas.

[0162] Furthermore, in this embodiment, a heat transfer layer identical to the heat transfer layer D can also be formed between the tray T and the wafer mounting surface 1041. The aforementioned identical heat transfer layer can be formed in the same manner as the heat transfer layer D.

[0163] <Variations of Embodiments 1 to 4> The wafer mounting surface of the wafer support stage can have a fixed height in the central region and the peripheral region. That is, it can be flat macroscopically, or the central region can be higher, or the peripheral region can be higher.

[0164] When the wafer mounting surface is formed as a convex shape with a higher central region, when a wafer W with a temperature higher than the wafer mounting surface is placed on the wafer mounting surface, and the wafer W cools from the back side and undergoes thermal deformation to become convex, the wafer W can be made in close contact with the wafer mounting surface. Furthermore, when the wafer mounting surface is formed as a concave shape with a lower central region, when a wafer W with a temperature lower than the wafer mounting surface is placed on the wafer mounting surface, and the wafer W is heated from the back side and undergoes thermal deformation to become concave, the wafer W can be made in close contact with the wafer mounting surface.

[0165] When using the tray T as in the fourth embodiment, the tray T can be made to be in close contact with the wafer mounting surface in the same manner.

[0166] As described above, the heat transfer layer D may be formed on the entire back side of the wafer mounting surface or the wafer W, or it may be formed only on a portion of the back side of the wafer mounting surface or the wafer W (specifically, for example, either the central region or the peripheral region). Heat transfer gases such as He gas may also be supplied to the regions on the back side of the wafer mounting surface or the wafer W where the heat transfer layer D is not formed.

[0167] In the above example, as the fixing part for holding and fixing the wafer W to the wafer mounting surface, an electrostatic chuck is used, which is held by electrostatic force generated by applying a DC voltage to the internal electrode 109. The fixing part for electrically holding and fixing the wafer W is not limited to those held by electrostatic force, but can also be held by the Johnson-Labec force. The fixing part is not limited to electrically held types as described above. For example, the fixing part can also be a physical fixing type such as a clamp. A clamp refers to a device that fixes the wafer W by clamping it between the clamp and the wafer support stage. Furthermore, the fixing part may be omitted.

[0168] <Regarding the electrical characteristics of the heat transfer layer D> The heat transfer layer D may also be electrically insulating. This allows residual charges to be generated in the heat transfer layer D, which can then be used for electrostatic adsorption of the wafer W. Furthermore, the heat transfer layer D may also be conductive. This allows residual charges generated in the wafer W to be removed via the heat transfer layer D. Moreover, the heat transfer layer D may also be constructed by wrapping a conductive portion with an electrically insulating portion. This allows for higher thermal conductivity using the conductive portion, and electrostatic adsorption of the wafer W using the residual charges generated in the electrically insulating portion.

[0169] (Fifth Embodiment) <Plasma Processing System> FIG24 is a top view showing the general configuration of a plasma processing system including a processing module as a plasma processing apparatus of the fifth embodiment.

[0170] The depressurization unit 11 of the plasma processing system 1A in Figure 24, in addition to the conveying module 50, also has a processing module 60H as a plasma processing device and a storage module 62 as a storage unit for the storage edge ring E. The interior of the processing module 60H (specifically, the interior of the plasma processing chamber 100) and the interior of the storage module 62 are maintained in a depressurized environment. For one conveying module 50, a plurality of processing modules 60H are provided, for example, six, and a plurality of storage modules 62 are also provided, for example, two.

[0171] The processing module 60H is connected to the conveying module 50 via a gate valve 61. Furthermore, the differences between this processing module 60H and the processing module 60 in FIG1 will be described below.

[0172] The storage module 62 is connected to the conveying module 50 via a gate valve 63.

[0173] In this embodiment, the transfer module 50 not only transports the wafer W, but also the edge ring E. Specifically, the transfer module 50 transports the edge ring E within the receiving module 62 to a processing module 60H, and transports the edge ring E of the replacement object within the processing module 60H to the receiving module 62. Furthermore, the transfer mechanism 70 is configured to transport not only the wafer W, but also the edge ring E, and the transfer arm 71 of the transfer mechanism 70 is configured to support not only the wafer W, but also the edge ring E. In the transfer module 50, the transfer arm 71 receives the edge ring E within the receiving module 62 and transports it into the processing module 60E. Also, the transfer arm 71 receives the edge ring E held within the processing module 60E and transports it out to the receiving module 62.

[0174] The wafer processing system using plasma processing system 1A is the same as the wafer processing system using plasma processing system 1 shown in FIG1, so its description is omitted.

[0175] <Processing Module 60H> Figure 25 is a longitudinal sectional view showing the general structure of the processing module 60H.

[0176] In the processing module 60 of FIG2, the object whose temperature is adjusted via the wafer support stage and the freely deformable heat transfer layer D as described above is the wafer W. In contrast, in the processing module 60H of FIG25, not only the wafer W, but also the edge ring E is the object whose temperature is adjusted via the wafer support stage and the freely deformable heat transfer layer. Therefore, the main difference between the processing module 60H of FIG25 and the processing module 60 of FIG2 lies in the configuration of the wafer support stage. Hereinafter, this difference will be explained in detail.

[0177] The processing module 60H has a wafer support stage 101H, which includes, for example, a lower electrode 103H, an electrostatic chuck 104H, an insulator 105H and a foot 106, and is provided with a lifter 107 and a lifter 400.

[0178] The electrostatic chuck 104H is similar to the electrostatic chuck 104 in Figure 2, with a wafer mounting surface 1041 in the central part and the upper surface 104H2 of the peripheral part becoming a ring mounting surface for mounting the edge ring E.

[0179] The electrostatic chuck 104H is an example of a fixing part that fixes the edge ring E to the upper surface 104H2 of the peripheral portion of the electrostatic chuck 104H, i.e., the ring mounting surface. The electrostatic chuck 104H has an electrode 109 in the center for holding the wafer W by electrostatic adsorption, and an electrode 401 in the peripheral portion for holding the edge ring E by electrostatic adsorption.

[0180] A DC voltage from a DC power supply (not shown) is applied to electrode 401. The electrostatic force generated therefrom causes the edge ring E to be adsorbed and held on the upper surface (hereinafter, the ring mounting surface) 104H2 of the periphery of the electrostatic chuck 104H. Electrode 401 may be a bipolar type comprising a pair of electrodes, but may also be a unipolar type.

[0181] The lifting device 400 is a lifting member that moves up and down relative to the annular mounting surface 104H2 of the electrostatic chuck 104H, and is, for example, formed in a columnar shape. When the lifting device 400 rises, its upper end protrudes from the annular mounting surface 104H2, thereby supporting the edge ring E. With this lifting device 400, the edge ring E can be connected between the electrostatic chuck 104H and the conveying arm 71 of the conveying mechanism 70. Furthermore, three or more lifting devices 400 are provided at intervals along the circumference of the electrostatic chuck 104H. Also, the lifting device 400 is configured to extend in the vertical direction.

[0182] The lifting device 400 is connected to the drive unit 402 that raises and lowers the lifting device 400. The drive unit 402 is provided for each lifting device 400, for example. Furthermore, the drive unit 402 has, for example, a motor (not shown) as a drive source that generates the driving force to raise and lower the lifting device 400.

[0183] The lifting device 400 is inserted into a through hole 403 that opens at the upper end of the annular mounting surface 104H2 of the electrostatic chuck 104H. The through hole 403 is formed, for example, to pass through the periphery of the electrostatic chuck 104H, the lower electrode 103H and the insulator 105H.

[0184] In the processing module 60H, a gas containing raw material gas supplied from the gas supply unit 130 is used to form a liquid heat transfer layer DA on the annular mounting surface 104H2 of the wafer support stage 101H, for example. Therefore, in the processing module 60H, the gas supply unit 130 can function as at least a part of the heat transfer layer forming unit configured to form the heat transfer layer DA on the annular mounting surface 104H2.

[0185] Furthermore, in the processing module 60H, RF power can also be supplied by the RF power supply unit 140 to generate plasma from the raw material gas supplied to the plasma processing space 100s, which becomes the raw material of the heat transfer layer DA. Therefore, the RF power supply unit 140 can function as at least part of other plasma generating units configured to generate plasma from the raw material gas in the plasma processing chamber 100.

[0186] <Wafer Processing by Processing Module 60H> Next, an example of wafer processing using processing module 60H, including the process of replacing the edge ring E, will be described. This will be explained using Figures 26 to 30. Figure 26 is a flowchart for explaining an example of the wafer processing described above. Figures 27 to 30 are diagrams showing the state of processing module 60H in the above wafer processing. Furthermore, the following processing is performed under the control of control unit 80.

[0187] For example, firstly, as shown in FIG26, a heat transfer layer DA is formed on the annular mounting surface 104H2 of the wafer support stage 101H (step S21).

[0188] More specifically, firstly, with the wafer W and edge ring E not placed on the wafer support stage 101H, as shown in FIG27, a gas containing a liquid heat transfer layer DA is supplied from the gas supply unit 130 via the upper electrode 102 to the interior of the plasma processing chamber 100, which has been depressurized to a specific vacuum level by the exhaust system 150. Simultaneously, high-frequency power HF for plasma generation is supplied from the RF power supply unit 140 to the lower electrode 103. This excites the raw material gas to generate plasma P11. Then, the generated plasma P11 acts to form a liquid heat transfer layer DA on the ring mounting surface 104H2, etc. After the heat transfer layer DA is formed, the supply of high-frequency power HF from the RF power supply unit 140 and the supply of the raw material gas from the gas supply unit 130 are stopped.

[0189] Next, as shown in FIG28, the edge ring E is placed on the ring mounting surface 104H2 of the wafer support stage 101H (step S22). Specifically, the edge ring E is moved into the plasma processing chamber 100 by the conveying mechanism 70 and placed on the ring mounting surface 104H2 of the electrostatic chuck 104H by the lifting mechanism 400. Subsequently, the interior of the plasma processing chamber 100 is depressurized to a specific vacuum level by the exhaust system 150.

[0190] Furthermore, the transfer of the edge ring E into the plasma processing chamber 100 is performed, for example, in the following manner: First, the edge ring E within the receiving module 62 is held by the transfer arm 71 of the transfer mechanism 70. Then, the transfer arm 71 holding the edge ring E is inserted into the plasma processing chamber 100 of the processing module 60H via the transfer inlet / outlet (not shown). Next, the edge ring E is transferred by the transfer arm 71 to above the ring mounting surface 1042 of the electrostatic chuck 104H. Subsequently, the edge ring E is mounted on the ring mounting surface 104H2 of the electrostatic chuck 104H by the lifting device 400 lifting and the transfer arm 71 being withdrawn from the plasma processing chamber 100.

[0191] Next, the heat transfer layer DA formed inside the plasma processing chamber 100, excluding the circumferential mounting surface 104H1, is removed (step S23).

[0192] Specifically, as shown in FIG29, a removal gas for removing the heat transfer layer DA is supplied from the gas supply unit 120 to the plasma processing space 100s via the upper electrode 102, and high-frequency power HF for plasma generation is supplied from the RF power supply unit 140 to the lower electrode 103H. Hereby, the removal gas is excited to generate plasma P12. Then, the heat transfer layer DA formed on the portion other than the annular mounting surface 104H2 (e.g., the inner wall surface of the plasma processing chamber 100, such as the lower surface of the upper electrode 102, or the wafer mounting surface 1041) is removed by the action of the generated plasma P12. Furthermore, the heat transfer layer DA formed on the annular mounting surface 104H2 is not exposed to the plasma P12 because it is covered by the wafer W, and therefore is not removed. After the heat transfer layer DA is removed, the supply of high-frequency power HF from the RF power supply unit 140 and the supply of removal gas from the gas supply unit 120 are stopped.

[0193] Next, plasma processing is performed on the surface of the electrostatic chuck 104H on which the heat transfer layer DA is formed, i.e., on the mounting surface (step S24). Specifically, for example, plasma processing is performed in the same manner as the processing described using FIG3, etc. More specifically, for example, after forming the heat transfer layer D on the wafer mounting surface 1041 of the wafer support stage 101H, the wafer W is placed on the wafer mounting surface 1041, and then plasma processing is performed on the wafer W. Then, the wafer W is removed. After removal, the heat transfer layer D can also be removed from the wafer mounting surface 1041.

[0194] Furthermore, in the plasma processing, the annular mounting surface 104H2 is adjusted to a specific temperature by the temperature-regulating fluid flowing through the flow path 108, thereby regulating the temperature of the edge ring E. Also, in the plasma processing, the edge ring E is separated from the heat transfer layer DA and is mounted on the annular mounting surface 104H2. The heat transfer layer DA is freely deformable, so the lower surface, i.e., the back surface, of the edge ring E is in close contact with the heat transfer layer DA. Moreover, since the heat transfer layer DA is a liquid, its thermal conductivity is higher than that of heat transfer gases such as He. Therefore, when using a liquid heat transfer layer DA, compared to the case where heat transfer gases such as He flow between the annular mounting surface 104H2 and the back surface of the edge ring E, the temperature of the edge ring E can be adjusted more efficiently via the annular mounting surface 104H2. Specifically, even if there is a large heat input from the plasma P to the edge ring E during the plasma processing, the temperature of the edge ring E can be maintained at a constant level by adjusting the temperature of the annular mounting surface 104H2. Furthermore, when the set temperature of the edge ring E changes during plasma processing, the temperature of the edge ring E can be immediately changed to the changed set temperature by adjusting the temperature of the ring mounting surface 104H2.

[0195] In the plasma process, in order to further tighten the contact between the heat transfer layer DA and the lower surface of the edge ring E, the edge ring E can also be held or fixed to the wafer support stage 101H (specifically, the ring mounting surface 104H2). For example, the edge ring E can also be adsorbed and held on the ring mounting surface 104H2 by the electrostatic force generated by the electrostatic chuck 104H. More specifically, a DC voltage can also be applied to the electrode 401 of the electrostatic chuck 104H, and the edge ring E can be electrostatically adsorbed onto the electrostatic chuck 104H by the electrostatic force. By holding it in the manner described above, the temperature of the edge ring E can be adjusted more efficiently. Furthermore, in the heat transfer layer DA removal process in step S13, the edge ring E can also be held on the wafer support stage 101H by electrostatic force, etc. Furthermore, when the edge ring E is held in place on the wafer support stage 101H by electrostatic force, the heat loss of the wafer support stage 101H from the edge ring E can also be controlled by controlling the degree of contact between the edge ring E and the wafer support stage 101H by electrostatic force.

[0196] After plasma treatment of wafer W, edge ring E leaves the ring mounting surface 104H2 and is removed (step S25). The removal of edge ring E from the ring mounting surface 104H2 does not need to be performed during every plasma treatment of wafer W, for example, when edge ring E has been consumed or when the heat transfer layer DA is damaged or consumed due to plasma.

[0197] In this step S25, specifically, the edge ring E is raised by the lifter 400 and leaves the heat transfer layer DA on the ring mounting surface 104H2. Thereafter, the edge ring E is transferred from the lifter 400 to the conveying mechanism 70 and is moved out of the plasma processing chamber 100 by the conveying mechanism 70.

[0198] Then, the heat transfer layer DA is removed from the ring-mounted surface 104H2 (step S26).

[0199] Specifically, as shown in FIG30, a removal gas for removing the heat transfer layer DA is supplied from the gas supply unit 120 to the plasma processing space 100s via the upper electrode 102, and high-frequency power HF for plasma generation is supplied from the RF power supply unit 140 to the lower electrode 103H. Thereby, the removal gas is excited to generate plasma P12. Then, the heat transfer layer DA is removed from the ring mounting surface 104H2 by the action of the generated plasma P12. After the heat transfer layer DA is removed, the supply of high-frequency power HF from the RF power supply unit 140 and the supply of removal gas from the gas supply unit 120 are stopped. Then, returning to step S21, steps S22 and S23 are performed, the heat transfer layer DA is formed on the ring mounting surface 104H2, and a new edge ring E is mounted on the ring mounting surface 104H2.

[0200] Furthermore, the removal of the heat transfer layer DA from the ring mounting surface 104H2 in step S26 may not be performed for each edge ring E. That is, the heat transfer layer DA on the ring mounting surface 104H2 may be shared among multiple edge rings E.

[0201] <Another Example of Heat Transfer Layer DA> In the above example, the heat transfer layer DA used for the edge ring E is set as a liquid layer, but the heat transfer layer DA can also be a solid layer as long as it is freely deformable. Furthermore, the heat transfer layer DA can also be a combination of liquid and solid layers as long as it is freely deformable.

[0202] That is, the heat transfer layer DA used for edge ring E is the same as the heat transfer layer D used for wafer W, and is a layer composed of at least one of a liquid layer or a solid layer, and is a freely deformable layer. Furthermore, the heat transfer layer DA used for edge ring E may be the same as or different from the heat transfer layer D used for wafer W.

[0203] <Effects, etc.> As described above, in this embodiment, a heat transfer layer DA, which is composed of at least one liquid layer or solid layer and is freely deformable, is formed on the wafer mounting surface 1041 of the wafer support stage 101. Therefore, in this embodiment, for the same reasons as in the first embodiment, the temperature of the edge ring E can be efficiently adjusted via the ring mounting surface 104H2 during plasma processing.

[0204] Furthermore, in this embodiment, as described above, in plasma processing and the like, the edge ring E can also be adsorbed and held on the ring mounting surface 104H2 by the electrostatic force generated by the electrostatic chuck 104H. This allows for closer contact between the heat transfer layer DA and the lower surface of the edge ring E, thereby further improving the efficiency of heat loss from the edge ring E via the ring mounting surface 104H2 and the heat transfer layer DA, or the heating efficiency of the edge ring E.

[0205] <Example of the state and electrical characteristics of the annular mounting surface 104H2 of the heat transfer layer DA> The heat transfer layer DA for the edge ring E, like the heat transfer layer D for the wafer W, can be formed on the entire annular mounting surface 104H2, or it can be formed only in a portion of the annular mounting surface 104H2. For example, the heat transfer layer DA can be formed only on the inner periphery of the annular mounting surface 104H2, or it can be formed only on the outer periphery of the annular mounting surface 1042.

[0206] Furthermore, the heat transfer layer DA used for the edge ring E is the same as the heat transfer layer D used for the wafer W, and its thickness can be different within the plane of the ring mounting surface 104H2. For example, the heat transfer layer DA can be made thinner on the inner peripheral side of the ring mounting surface 104H2 than on the outer peripheral side, or the heat transfer layer DA can be made thinner on the outer peripheral side of the ring mounting surface 104H2 than on the inner peripheral side.

[0207] Furthermore, the heat transfer layer DA may also be formed only in a portion of the annular mounting surface 104H2. Heat transfer gases such as He gas may also be supplied to the regions of the annular mounting surface 104H2 where the heat transfer layer DA is not formed.

[0208] The heat transfer layer DA used for the edge ring E may also have electrical insulation. Furthermore, the heat transfer layer DA may also have electrical conductivity. Moreover, the heat transfer layer DA may also be constructed by wrapping a conductive portion with an electrically insulating portion.

[0209] <Variations of the Fifth Embodiment> In the example described using FIG3, etc., the processing module 60 of FIG2 only sets the wafer W and the edge ring E as objects for temperature adjustment via the wafer support stage 101 and the heat transfer layer D. Also, in the example described using FIG26, etc., the processing module 60H of FIG25 sets both the wafer W and the edge ring E as objects for temperature adjustment via the wafer support stage 101H and the heat transfer layer D. However, the processing module 60H of FIG25 may also only set the wafer W and the edge ring E as objects for temperature adjustment via the wafer support stage 101H and the heat transfer layer D. That is, in the processing module 60H of FIG25, the heat transfer layer D for the wafer W may not be formed, and only the heat transfer layer DA for the edge ring E may be formed.

[0210] Furthermore, in the examples described above using Figure 26, the objects of the temperature adjustment are both the wafer W and the edge ring E. The timing of forming the heat transfer layer D for the wafer W is different from the timing of forming the heat transfer layer DA for the edge ring E. However, when the heat transfer layer D for the wafer W and the heat transfer layer DA for the edge ring E are the same, the timing of forming the heat transfer layer D for the wafer W can also be the same as the timing of forming the heat transfer layer DA for the edge ring E. By setting them to be the same, it is possible to increase the output.

[0211] When the timing of forming the heat transfer layer D for wafer W is different from the timing of forming the heat transfer layer DA for edge ring E, the dummy wafer can also be placed on the wafer mounting surface 1041 when forming the heat transfer layer DA for edge ring E.

[0212] Furthermore, in the examples described above using Figure 26, the timing of removing the heat transfer layer D for wafer W differs from the timing of removing the heat transfer layer DA for edge ring E. However, in cases where edge ring E is replaced when wafer W is replaced, the timing of removing the heat transfer layer D for wafer W can be the same as the timing of removing the heat transfer layer DA for edge ring E. By setting them to be the same, it is possible to increase the yield.

[0213] Furthermore, the form of the heat transfer layer DA used to form the edge ring E from the raw material gas is not limited to the above example, and variations with the same form as the heat transfer layer D used to form the wafer from the raw material gas can be applied.

[0214] Furthermore, the form of supplying the raw material gas of the heat transfer layer DA for the edge ring E to the plasma processing space for 100s is not limited to the above example. The same variation of the form of supplying the raw material gas of the heat transfer layer D for the wafer to the plasma processing space for 100s can be applied.

[0215] Furthermore, the form in which the heat transfer layer DA formed outside the ring mounting surface 104H2 is removed is not limited to the above example, and variations of the form in which the heat transfer layer D formed outside the wafer mounting surface is removed can be applied. Also, the form in which the heat transfer layer DA formed on the ring mounting surface 104H2 is removed is not limited to the above example, and variations of the form in which the heat transfer layer D formed on the wafer mounting surface is removed can be applied.

[0216] In the above example, when forming the heat transfer layer DA for the edge ring E, the edge ring E is not located within the plasma processing chamber 100, but it may also be located within the plasma processing chamber 100. Specifically, when forming the heat transfer layer DA, the edge ring E may also be located within the plasma processing chamber 100 and away from the ring mounting surface 104H2. More specifically, with the wafer W supported by the elevator 400 and away from the ring mounting surface 104H2, a raw material gas may be supplied to the plasma processing chamber 100, and at least one of the raw material gas may be liquefied or solidified to form the heat transfer layer DA on the ring mounting surface 104H2.

[0217] In this case, for example, the heat transfer layer DA formed on the upper surface of the edge ring E when the heat transfer layer DA is formed on the ring mounting surface 104H2 can also be removed in the same manner as when the heat transfer layer D formed on the upper surface of the wafer W is removed using FIG13.

[0218] Furthermore, as in this example, when the heat transfer layer DA is formed with the edge ring E supported by the elevator 400 and away from the ring mounting surface 104H2, a suppression part for suppressing the formation of the heat transfer layer DA on the elevator 400 can also be provided. The suppression part is configured, for example, to be the same as the suppression part for suppressing the formation of the heat transfer layer D for the wafer W on the elevator 107.

[0219] Alternatively, the heat transfer layer DA can be formed on the annular mounting surface 104H2 in the following manner. That is, firstly, the liquefaction or solidification of the raw material gas supplied to the plasma processing chamber 100 can be performed by forming the heat transfer layer DA on at least the lower surface of the edge ring E located within the plasma processing chamber 100, without forming the heat transfer layer DA on the annular mounting surface 104H2. Subsequently, the heat transfer layer D can be formed on the annular mounting surface 104H2 by placing the edge ring E with the heat transfer layer DA formed on its lower surface on the annular mounting surface 104H2. In this example, the control unit 80, the lifting mechanism of the edge ring E including the lifter 400, and the gas supply unit 130 can function as at least a part of the heat transfer layer forming unit configured to form the heat transfer layer DA on the annular mounting surface 104H2.

[0220] As described above, the heat transfer layer DA is selectively formed on the edge ring E, for example, by pre-cooling the edge ring E before it is moved into the plasma processing chamber 100. In the case where the edge ring E is pre-cooled, the front end, i.e. the upper end, of the lifter 400 supporting the edge ring E can also be formed of a heat-insulating material.

[0221] In the above example, when the heat transfer layer DA for the edge ring E is removed from the ring mounting surface 104H2 and the heat transfer layer DA is formed on the ring mounting surface 104H2, the edge ring E is replaced, but it may not be done. When the edge ring E is not replaced, during the formation of the heat transfer layer DA on the ring mounting surface 104H2, the edge ring E may be located outside the plasma processing chamber 100, or it may be located inside the plasma processing chamber 100 while being supported by the lift 400 and away from the ring mounting surface 104H2.

[0222] (Sixth Embodiment) <Processing Module 60J> Figures 31 and 32 are longitudinal sectional views showing the general configuration of the processing module of the plasma processing apparatus according to the sixth embodiment. Furthermore, in Figures 31 and 32, different parts of the wafer support stage 101J are shown in cross-section.

[0223] In this embodiment, similar to the second embodiment, a heat transfer layer D is formed on the wafer support stage using a heat transfer medium composed of at least one of a liquid medium or a solid medium with fluidity. However, in the second embodiment, the object whose temperature is adjusted via the wafer support stage and the heat transfer layer D is the wafer W, but in this embodiment, not only the wafer W, but also the edge ring E is the object whose temperature is adjusted. Therefore, the main difference between the processing module of this embodiment and the processing module of the second embodiment lies in the configuration of the wafer support stage. Hereinafter, this difference will be mainly explained.

[0224] The processing module 60J of Figures 31 and 32 has a wafer support stage 101J, which includes, for example, a lower electrode 103J, an electrostatic chuck 104J, an insulator 105J and a foot 106, and is provided with a lifter 107 and a lifter 400.

[0225] The electrostatic chuck 104J is the same as the electrostatic chuck 104H in FIG25, and is provided with electrode 109 and electrode 401. In the processing module 60J, the insertion hole 403 for the lifting device 400 to be inserted is formed, for example, to pass through the periphery of the electrostatic chuck 104J, the lower electrode 103J and the insulator 105J.

[0226] Furthermore, as shown in FIG32, a heat transfer medium supply port 500 is formed on the annular mounting surface 104J2 of the electrostatic chuck 104J of the wafer support stage 101J. For example, a plurality of supply ports 500 are provided on the annular mounting surface 104J2. A groove 501 may also be provided on the annular mounting surface 104J2. The groove 501 is formed for the heat transfer medium to diffuse along the annular mounting surface 104J2 via the groove 501.

[0227] Furthermore, a flow path 502 is provided inside the wafer support stage 101J, with one end in fluid communication with each supply port 500. The other end of the flow path 502 is, for example, in fluid connection with the gas supply section 510. Also, the end of the flow path 502 on the side of the ring mounting surface 104J2 (specifically, for example, the portion located within the electrostatic chuck 104J) is formed to be narrower, and the aforementioned heat transfer medium within the flow path 502 is supplied to the ring mounting surface 104J2 via the supply port 500 through capillary action. Furthermore, the flow path 502 is formed, for example, across the electrostatic chuck 104J, the lower electrode 103J, and the insulator 105J.

[0228] The gas supply unit 510 may include one or more gas sources 511 and one or more flow controllers 512. In one embodiment, the gas supply unit 510 is configured, for example, to supply one or more types of heat transfer medium generating gas from their respective gas sources 511 to the wafer support stage 101J via their respective flow controllers 512. Each flow controller 512 may include, for example, a mass flow controller or a pressure-controlled flow controller. Furthermore, the gas supply unit 510 may include one or more flow modulation devices that modulate or pulse the flow rate of one or more types of heat transfer medium generating gas.

[0229] The heat transfer medium generating gas system supplied from the gas supply unit 510 is cooled within the flow path 502, for example, by the lower electrode 103J which has been cooled by the temperature-regulating fluid in the flow path 108, and undergoes liquefaction or solidification to change into a heat transfer medium composed of at least one of a liquid medium or a fluid solid medium. As described above, the heat transfer medium is supplied to the annular mounting surface 104J2 via the supply port 500, for example, by capillary action, to form a heat transfer layer DA for the edge ring E. Therefore, the gas supply unit 510 can function as at least a part of the heat transfer layer forming unit configured to form the heat transfer layer DA on the annular mounting surface 104J2.

[0230] <Wafer Processing by Processing Module 60J> Next, an example of wafer processing including the replacement of the edge ring E performed using processing module 60J will be described using Figures 33 to 36. Figure 33 is a flowchart for describing an example of the wafer processing described above. Figures 34 to 36 are diagrams showing the state of processing module 60J in the wafer processing described above. Furthermore, the following processing is performed under the control of control unit 80.

[0231] For example, firstly, as shown in Figures 33 and 34, the edge ring E is placed on the ring mounting surface 104J2 of the wafer support stage 101J (step S31). Specifically, the edge ring E is moved into the plasma processing chamber 100 by the conveying mechanism 70 and placed on the ring mounting surface 104J2 of the electrostatic chuck 104J by the lifting mechanism 400. Subsequently, the interior of the plasma processing chamber 100 is depressurized to a specific vacuum level (pressure p11) by the exhaust system 150.

[0232] Then, as shown in FIG35, a heat transfer medium consisting of at least one of a liquid medium or a solid medium with fluidity is supplied through the wafer support stage 101J to the back side between the ring mounting surface 104J2 and the edge ring E to form a heat transfer layer DA (step S32).

[0233] Specifically, the edge ring E is held on the wafer support stage 101J. For example, a DC voltage is applied to the electrode 401 of the electrostatic chuck 104J, and the edge ring E is electrostatically attracted to the electrostatic chuck 104J by electrostatic force. At this time, the temperature of the ring mounting surface 104J2 is adjusted to temperature T11, and therefore, the temperature in the flow path 502 is also adjusted to T11. Furthermore, the temperature T11 is set to a temperature that can effectively carry out the process processing, for example, it is set to be equal to the temperature of the ring mounting surface 104J2 during the process processing.

[0234] After the edge ring E is held on the wafer support stage 101J, a heat transfer medium generating gas is supplied from the gas supply section 510 to the flow path 502 of the wafer support stage 101J at a temperature T12 (>T11) and a pressure p12 (>p11). The heat transfer medium generating gas system supplied to the flow path 502 is cooled to a temperature T11 within the flow path 502, becoming a heat transfer medium composed of at least one of a liquid medium or a fluid solid medium. Then, the heat transfer medium is supplied to the ring mounting surface 104J2 via the supply port 500, for example, by capillary action. The heat transfer medium supplied to the ring mounting surface 104J2 diffuses along the ring mounting surface 104J2 by ​​capillary action generated by the gap between the ring mounting surface 104J2 and the back surface of the edge ring E, forming a heat transfer layer DA.

[0235] Furthermore, by providing the groove 501 on the ring mounting surface 104J2 as described above, the gap between the ring mounting surface 104J2 and the back surface of the edge ring E can be widened, thereby allowing the heat transfer medium to diffuse appropriately along the ring mounting surface 104J2 through capillary action. Also, the pressure p13 applied to the heat transfer layer DA also includes the pressure applied to the heat transfer layer DA by electrostatic adsorption of the edge ring E, and is 0.1 Torr to 100 Torr.

[0236] The supply of heat transfer medium to the annular mounting surface 104J2 (specifically, the supply of heat transfer medium generating gas from the gas supply unit 510) is stopped, for example, when the supply amount reaches a certain amount (specifically, when the supply time of heat transfer medium generating gas from the gas supply unit 510 exceeds a certain time). Furthermore, for example, a monitoring device such as a camera can be used to monitor for leakage of heat transfer medium between the annular mounting surface 104J2 and the back surface of the edge ring E; when leakage is detected, the supply of heat transfer medium to the annular mounting surface 104J2 is stopped.

[0237] Next, plasma processing is performed on the upper surface of the electrostatic chuck 104, i.e., the mounting surface, where the heat transfer layer DA is formed (step S33). Specifically, for example, plasma processing is performed in the same manner as the processing described using FIG3, etc. More specifically, for example, after placing the wafer W on the wafer mounting surface 1041 of the wafer support stage 101J, forming the heat transfer layer D between the wafer mounting surface 1041 and the back surface of the wafer W, plasma processing is performed on the wafer W. Subsequently, the heat transfer layer D is vaporized and removed, and the wafer W is removed.

[0238] Furthermore, in the plasma process, the annular mounting surface 104J2 is adjusted to a specific temperature T11 by the temperature-regulating fluid flowing through the flow path 108 to regulate the temperature of the edge ring E. Also, in the plasma process, the edge ring E is separated by a heat transfer layer DA mounted on the annular mounting surface 104J2, and the heat transfer layer DA is freely deformable; therefore, the lower surface, i.e., the back surface, of the edge ring E is in close contact with the heat transfer layer DA. Furthermore, the heat transfer layer DA is formed of a heat transfer medium, and this heat transfer medium is composed of at least one of a liquid medium or a fluid solid medium; therefore, its thermal conductivity is higher than that of heat transfer gases such as He. Therefore, when using the heat transfer layer DA, compared to the case where heat transfer gases such as He flow between the annular mounting surface 104J2 and the back surface of the edge ring E, the temperature of the edge ring E can be adjusted more efficiently via the annular mounting surface 104J2. Specifically, even if there is a large amount of heat input from plasma P to edge ring E during plasma processing, the temperature of edge ring E can be maintained at a constant level by adjusting the temperature of ring mounting surface 104J2. Furthermore, when the set temperature of edge ring E changes during plasma processing, the temperature of edge ring E can be immediately changed to the changed set temperature by adjusting the temperature of ring mounting surface 104J2.

[0239] Furthermore, during plasma processing, a DC voltage is applied to the electrode 401 of the electrostatic chuck 104J, thereby causing the edge ring E to be electrostatically attracted and held on the electrostatic chuck 104J. Also, the degree of contact between the edge ring E and the wafer support stage 101J can be controlled by electrostatic force, thereby controlling the heat dissipation of the wafer support stage 101J from the edge ring E.

[0240] After plasma treatment of wafer W, the edge ring E leaves the ring mounting surface 104J2, and the heat transfer layer DA is vaporized and removed (step S34). In one example, the heat transfer layer DA is removed by vaporization. The removal of the edge ring E from the ring mounting surface 104J2 does not need to be performed during every plasma treatment of wafer W, for example, when the edge ring E is consumed or when the heat transfer layer DA is damaged or consumed due to plasma.

[0241] In this step S34, specifically, after the holding of the edge ring E on the wafer support stage 101J, i.e., the adsorption and holding of the edge ring E by the electrostatic chuck 104J, stops, the edge ring E is raised by the lifter 400, as shown in FIG36, and leaves the ring mounting surface 104J2. After leaving, the heat transfer layer DA is exposed to a reduced pressure environment, specifically, to an environment with a pressure p11 below 0.001 Torr, thereby vaporizing and being removed. Furthermore, when removing the heat transfer layer DA from the ring mounting surface 104J2, at least one of plasma, heat, or light, or at least one of plasma, heat, or light, can be used instead of exposure to a reduced pressure environment.

[0242] Furthermore, the gas used to generate the heat transfer medium for the heat transfer layer DA may be the same as or different from the gas used to generate the heat transfer medium for the heat transfer layer D.

[0243] Next, the edge ring E is moved out (step S35). Specifically, the edge ring E is transferred from the lifter 400 to the conveying mechanism 70, and is moved out of the plasma processing chamber 100 by the conveying mechanism 70. Afterwards, return to step S31 and proceed to step S32, where the new edge ring E is placed on the ring mounting surface 104J2, and a heat transfer layer DA is formed on the ring mounting surface 104J2.

[0244] <Effects, etc.> As described above, in this embodiment, a heat transfer medium consisting of at least one of a liquid medium or a fluid solid medium is supplied via the wafer support stage 101J to the area between the ring mounting surface 104J2 and the back surface of the edge ring E, forming a heat transfer layer DA. Therefore, in this embodiment, for the same reasons as in the second embodiment, the temperature of the edge ring E can be efficiently adjusted via the ring mounting surface 104J2 during plasma processing. Furthermore, blockage of the flow path 502 due to the aforementioned heat transfer medium can be suppressed. Moreover, there is no need to separately provide a process for removing the heat transfer layer DA, thus enabling an increase in yield.

[0245] <Variation of the 6th Embodiment> In this embodiment, similar to the variation of the 5th embodiment described above, only the wafer W and the edge ring E in the edge ring E can be set as objects for temperature adjustment via the wafer support stage 101J and the heat transfer layer D. Specifically, the processing module 60J in the examples of FIG31 and FIG32 is provided with a flow path 502 for forming the heat transfer layer DA for the edge ring E and a flow path 310 for forming the heat transfer layer D for the wafer W, but the latter configuration can be omitted.

[0246] Furthermore, in this embodiment, the timing of forming the heat transfer layer D for wafer W can be the same as the timing of forming the heat transfer layer DA for edge ring E, which is the same as the variation of the fifth embodiment described above.

[0247] Furthermore, the supply form of the heat transfer medium used to form the heat transfer layer DA for forming the edge ring E is not limited to the above example, and variations of the same supply form as the heat transfer medium used to form the heat transfer layer D for forming the wafer W can be applied.

[0248] Furthermore, the heat transfer medium used to form the heat transfer layer DA for the edge ring E is not limited to the above example, and the same variation of the heat transfer medium used to form the heat transfer layer D for the wafer W can be used.

[0249] Furthermore, the groove 501 used to form the heat transfer layer DA for the edge ring E can be the same specific example as the groove 320 used to form the heat transfer layer D for the wafer described above.

[0250] Furthermore, the annular mounting surface may also be the same as the wafer mounting surface, with the portion other than the groove 501 (specifically, for example, the top of the support pillar disposed within the groove 501) being composed of a porous body. In the case where the groove 501 is not provided on the annular mounting surface, the entire annular mounting surface may also be formed of a porous body.

[0251] When the groove 501 is not formed on the annular mounting surface 104J2 and the entire surface is formed by a porous body, the thickness of the porous body can also be different in each region of the annular mounting surface 104J2.

[0252] Furthermore, the heat transfer layer DA used for the edge ring E can also be formed by mixing a high thermal conductivity conductive medium and a low thermal conductivity conductive medium, and the mixing ratio of the high thermal conductivity conductive medium and the low thermal conductivity conductive medium is different in each region of the ring mounting surface 104J2.

[0253] Alternatively, the density of the groove 501 can be made different in each region of the annular mounting surface 104J2.

[0254] In the above example, when the heat transfer layer DA used for removing the edge ring E from the ring mounting surface 104J2 and when the heat transfer layer DA is formed on the ring mounting surface 104J2, the edge ring E is also replaced, but it is also optional. If the edge ring E is not replaced, the edge ring E, which is supported by the lift 400 and removed from the ring mounting surface 104J2 for the purpose of removing the heat transfer layer DA, can be temporarily moved out of the plasma processing chamber 100 and then moved back into the plasma processing chamber 100, or it can be placed on the ring mounting surface 104J2 again without being moved out.

[0255] <Variations of the 5th and 6th Embodiments> In the above examples, as the fixing part that holds and fixes the edge ring E to the ring mounting surface, an electrostatic chuck is used, which is held by adsorption using the electrostatic force generated by applying a DC voltage to the internal electrode 401. As an electrically fixed part, it is not limited to being held by electrostatic force, but can also be held by Johnson-Labec force. The above-mentioned fixing part is not limited to being electrically held as described above. For example, the above-mentioned fixing part can also be physically fixed such as a clamp. Furthermore, the above-mentioned fixing part can also be omitted.

[0256] Furthermore, in the above example, the edge ring E is housed in the housing module 62 connected to the transfer module 50, but it can also be housed in the wafer transfer box placed on the loading port 32 in the same manner as the wafer W.

[0257] Furthermore, sometimes a cover ring configured to cover the outer side of the edge ring is placed on a wafer support stage of a plasma processing module. In this case, a heat transfer layer can also be formed on the mounting surface of the cover ring in the wafer support stage in the same manner as the heat transfer layer DA used for the edge ring E described above.

[0258] (Other variations) The above-described methods for removing the heat transfer layer formed on each part can also be combined. For example, when removing the heat transfer layer formed outside the wafer mounting surface, two or more of the following methods can be combined: plasma application, heating, light irradiation, and depressurization of the plasma processing chamber 100 while the wafer W is mounted.

[0259] In the above example, plasma etching is performed as plasma treatment, but the technology of the present invention can also be applied to situations where other treatments besides etching (e.g., film formation treatment) are performed as plasma treatment.

[0260] The embodiments disclosed herein should be considered illustrative in all respects and not restrictive. The above embodiments may also be omitted, substituted, or modified in various forms without departing from the scope and spirit of the claims. For example, the constituent elements of the above embodiments can be arbitrarily combined. Based on such arbitrary combinations, it is naturally possible to obtain the functions and effects related to each of the combined constituent elements, and to obtain other functions and effects that can be understood by the practitioner based on the description in this specification.

[0261] Furthermore, the effects described in this specification are merely illustrative or exemplary and not limiting. That is, the technology of the present invention can achieve the above-mentioned effects and other effects that the operator can understand from the description of this specification, or can replace the above-mentioned effects to achieve other effects that the operator can understand from the description of this specification.

[0262] Furthermore, the following configuration examples also fall within the technical scope of the present invention. (1) A processing method that performs plasma treatment on a substrate, and includes the following steps: placing a temperature-adjustable object on a mounting surface of a substrate support portion configured within a processing container capable of depressurization; forming a heat transfer layer for the temperature-adjustable object on the mounting surface of the substrate support portion, the heat transfer layer being composed of at least one of a liquid layer or a freely deformable solid layer and being freely deformable; and performing plasma treatment on the substrate on the mounting surface on which the heat transfer layer is formed. (2) The processing method of (1) above, wherein the forming step includes the following step, namely, supplying a raw material gas, which becomes the raw material for the heat transfer layer, to the processing space within the processing container. (3) The processing method of (2) above, wherein the processing container has a wall dividing the processing space, and the step of supplying the raw material gas is to supply the raw material gas through the wall. (4) The processing method as described in (2) or (3) above, wherein the process of supplying the raw material gas is to supply the raw material gas via the substrate support portion. (5) The processing method as described in any one of (2) to (4) above, wherein the process of supplying the raw material gas is to supply the raw material gas via a conveying device that conveys the substrate relative to the processing container. (6) The processing method as described in any one of (2) to (5) above, wherein the forming process uses plasma to form the heat transfer layer from the raw material gas. (7) The processing method as described in any one of (2) to (5) above, wherein the forming process uses at least one of the liquefaction or solidification of the raw material gas on the cooled mounting surface to form the heat transfer layer. (8) The processing method as described in (1) above, wherein the forming process supplies a heat transfer medium composed of at least one of a liquid medium or a fluid solid medium to the mounting surface via the substrate support portion to form the heat transfer layer. (9) The processing method of any one of (1) to (8) above, wherein the forming step is performed by placing the temperature adjustment object having the heat transfer layer formed on its lower surface on the placement surface during the placement step, thereby forming the heat transfer layer on the placement surface. (10) The processing method of any one of (1) to (9) above, wherein the forming step is performed by forming the heat transfer layer on the placement surface while the temperature adjustment object is located inside the processing container and away from the placement surface. (11) The processing method of any one of (1) to (8) and (10) above, wherein the forming step is performed before the placement step. (12) The processing method of (1) or (8) above, wherein the forming step is performed after the placement step. (13) The processing method of any one of (1) to (12) above, comprising the step of removing the heat transfer layer formed in the processing container during the forming step, excluding the placement surface.(14) The processing method of any one of (1) to (13) above includes the step of removing the heat transfer layer from the mounting surface after performing the plasma treatment step. (15) The processing method of (14) above, wherein the step of removing the heat transfer layer from the mounting surface is to vaporize the heat transfer layer by heating the mounting surface. (16) The processing method of (14) above, wherein the step of removing the heat transfer layer from the mounting surface is to remove the heat transfer layer using plasma. (17) The processing method of any one of (1) to (16) above includes the step of adsorbing and holding the temperature adjustment object on the mounting surface by electrostatic force generated by an electrostatic chuck. (18) The processing method of any one of (1) to (17) above, wherein at least one of the temperature adjustment object system substrate or the edge ring arranged in a manner surrounding the substrate mounted on the mounting surface. (19) A plasma processing apparatus comprising: a processing container configured to depressurize; a substrate support disposed within the processing container and having a mounting surface for mounting a substrate; a heat transfer layer forming section forming a heat transfer layer for a temperature-adjustable object on the mounting surface of the substrate support, the heat transfer layer being composed of at least one of a liquid layer or a freely deformable solid layer and being freely deformable; and a control section; the control section controlling the following steps: placing the temperature-adjustable object on the mounting surface; and performing plasma processing on the substrate on the mounting surface on which the heat transfer layer is formed. (20) The plasma processing apparatus of (19) above, wherein the heat transfer layer forming section supplies a raw material gas, which becomes the raw material for the heat transfer layer, into the processing space within the processing container. (21) In the plasma processing apparatus of (19) or (20) above, the heat transfer layer forming section supplies a heat transfer medium composed of at least one of a liquid medium or a fluid solid medium to the mounting surface via the substrate support section to form the heat transfer layer. (22) In the plasma processing apparatus of any one of (19) to (21) above, the heat transfer layer forming section forms the heat transfer layer on the mounting surface by placing the temperature adjustment object on which the heat transfer layer is formed on the lower surface. (23) In the plasma processing apparatus of any one of (19) to (22) above, the heat transfer layer forming section forms the heat transfer layer on the mounting surface while the temperature adjustment object is located inside the processing container and away from the mounting surface. (24) The plasma processing apparatus of any one of (19) to (23) above, wherein at least one of the temperature adjustment target system substrate or the edge ring arranged in such a way as to surround the substrate placed on the mounting surface.(25) The plasma processing apparatus of any one of (19) to (24) above, wherein the substrate support portion has an electrostatic chuck, and the control portion is controlled in such a way as to adsorb and hold the temperature adjustment object on the mounting surface by means of the electrostatic force generated by the electrostatic chuck. [Simplified Explanation of the Diagram]

[0008] Figure 1 is a top view showing an overview of the configuration of a plasma processing system including a processing module of the plasma processing apparatus according to the first embodiment. Figure 2 is a longitudinal sectional view showing an overview of the configuration of the processing module of the plasma processing apparatus according to the first embodiment. Figure 3 is a flowchart illustrating an example of wafer processing performed using the processing module of Figure 2. Figure 4 is a diagram showing the state of the processing module of Figure 2 during wafer processing. Figure 5 is a diagram showing the state of the processing module of Figure 2 during wafer processing. Figure 6 is a diagram showing the state of the processing module of Figure 2 during wafer processing. Figure 7 is a diagram showing the state of the processing module of Figure 2 during wafer processing. Figure 8 is a diagram showing the state of the processing module of Figure 2 during wafer processing. Figure 9 is a diagram illustrating another example of the feed gas supply configuration. Figure 10 is a diagram illustrating another example of the feed gas supply configuration. Figure 11 is a diagram illustrating another example of the feed gas supply configuration. Figure 12 is a diagram illustrating another example of the supply configuration of the raw material gas. Figure 13 is a diagram illustrating another example of the state inside the processing container during the formation of the heat transfer layer. Figure 14 is a longitudinal sectional view showing an overview of the configuration of the processing module of the plasma processing apparatus according to the second embodiment. Figure 15 is a flowchart illustrating an example of wafer processing performed using the processing module of Figure 14. Figure 16 is a diagram showing the state of the processing module of Figure 14 during wafer processing. Figure 17 is a diagram showing the state of the processing module of Figure 14 during wafer processing. Figure 18 is a diagram showing the state of the processing module of Figure 14 during wafer processing. Figure 19 is a diagram showing the state of the processing module of Figure 14 during wafer processing. Figure 20 is a diagram showing a specific example of a tank. Figure 21 is a diagram showing a specific example of a tank. Figure 22 is a longitudinal sectional view showing an overview of the configuration of the processing module of the plasma processing apparatus according to the third embodiment. Figure 23 is a longitudinal sectional view showing the general configuration of the processing module of the plasma processing apparatus according to the fourth embodiment. Figure 24 is a top view showing the general configuration of the plasma processing system including the processing module of the plasma processing apparatus according to the fifth embodiment. Figure 25 is a longitudinal sectional view showing the general configuration of the processing module of the plasma processing apparatus according to the fifth embodiment. Figure 26 is a flowchart illustrating an example of wafer processing performed using the processing module of Figure 25. Figure 27 is a diagram showing the state of the processing module of Figure 25 during wafer processing. Figure 28 is a diagram showing the state of the processing module of Figure 25 during wafer processing. Figure 29 is a diagram showing the state of the processing module of Figure 25 during wafer processing. Figure 30 is a diagram showing the state of the processing module of Figure 25 during wafer processing. Figure 31 is a longitudinal sectional view showing the general configuration of the processing module of the plasma processing apparatus according to the sixth embodiment. Figure 32 is a longitudinal sectional view showing the general configuration of the processing module of the plasma processing apparatus according to the sixth embodiment.Figure 33 is a flowchart illustrating an example of wafer processing performed using the processing modules of Figures 31 and 32. Figure 34 is a diagram showing the states during wafer processing using the processing modules of Figures 31 and 32. Figure 35 is a diagram showing the states during wafer processing using the processing modules of Figures 31 and 32. Figure 36 is a diagram showing the states during wafer processing using the processing modules of Figures 31 and 32.

Claims

1. A processing method for plasma treatment of a substrate, comprising the steps of: placing a temperature-adjustable object on a mounting surface of a substrate support portion configured within a processing container capable of depressurization; forming a heat transfer layer for the temperature-adjustable object on the mounting surface of the substrate support portion, the heat transfer layer being composed of and freely deformable of at least one of a liquid layer or a freely deformable solid layer; and performing plasma treatment on the substrate on the mounting surface on which the heat transfer layer is formed.

2. The processing method of claim 1, wherein the above-mentioned forming process includes the following step: supplying raw material gas, which becomes the raw material of the heat transfer layer, to the processing space within the processing container.

3. The processing method of claim 2, wherein the processing container has a wall dividing the processing space, and the process of supplying the raw material gas is to supply the raw material gas through the wall.

4. The processing method of claim 2, wherein the process of supplying the raw material gas is to supply the raw material gas via the substrate support portion.

5. The processing method of claim 2, wherein the process of supplying the raw material gas is to supply the raw material gas via a conveying device that conveys the substrate relative to the processing container.

6. The processing method of any one of claims 2 to 5, wherein the above forming process uses plasma to form the heat transfer layer from the above raw material gas.

7. The processing method of any one of claims 2 to 5, wherein the above-mentioned forming process involves liquefying or solidifying the above-mentioned raw material gas using the cooled above-mentioned placement surface to form the heat transfer layer.

8. The processing method of claim 1, wherein the above-mentioned forming process involves supplying a heat transfer medium consisting of at least one of a liquid medium or a fluid solid medium to the above-mentioned mounting surface via the above-mentioned substrate support portion to form the heat transfer layer.

9. The processing method of any one of claims 1 to 5, wherein the above-mentioned forming step is performed by placing the temperature adjustment object having the heat transfer layer formed on its lower surface on the placement surface during the above-mentioned placement step, thereby forming the heat transfer layer on the placement surface.

10. The processing method of any one of claims 1 to 5, wherein the above forming step is performed by forming the heat transfer layer on the mounting surface while the temperature adjustment object is located inside the processing container and away from the mounting surface.

11. The processing method of any one of claims 1 to 5, wherein the above-mentioned forming process is performed before the above-mentioned placement process.

12. The processing method as described in claim 1 or 8, wherein the above-mentioned forming process is performed after the above-mentioned placement process.

13. The processing method of any one of claims 1 to 5 includes the step of removing the heat transfer layer formed in the processing container during the above forming step, excluding the above-mentioned placement surface.

14. The processing method of any one of claims 1 to 5 includes the following step: after performing the above-mentioned plasma treatment step, the heat transfer layer is removed from the above-mentioned mounting surface.

15. The processing method of claim 14, wherein the step of removing the heat transfer layer from the mounting surface is performed by heating the mounting surface to vaporize the heat transfer layer.

16. The processing method of claim 14, wherein the process of removing the heat transfer layer from the mounting surface is to remove the heat transfer layer using plasma.

17. The processing method of any one of claims 1 to 5 includes the following steps: adsorbing and holding the temperature adjustment object on the mounting surface by means of electrostatic force generated by an electrostatic chuck.

18. The processing method of any one of claims 1 to 5, wherein at least one of the above-mentioned temperature adjustment target system substrate or the edge ring arranged in such a way as to surround the substrate placed on the above-mentioned mounting surface.

19. A plasma processing apparatus comprising: a processing container configured to depressurize; a substrate support disposed within the processing container and having a mounting surface for mounting a substrate; a heat transfer layer forming section forming a heat transfer layer for a temperature-adjustable object on the mounting surface of the substrate support, the heat transfer layer being composed of at least one of a liquid layer or a freely deformable solid layer and being freely deformable; and a control section; wherein the control section controls the process of: placing the temperature-adjustable object on the mounting surface; and performing plasma processing on the substrate on the mounting surface on which the heat transfer layer is formed.

20. The plasma processing apparatus of claim 19, wherein the heat transfer layer forming section supplies a raw material gas, which becomes the raw material for the heat transfer layer, to the processing space within the processing container.

21. The plasma processing apparatus of claim 19, wherein the heat transfer layer forming section supplies a heat transfer medium consisting of at least one of a liquid medium or a fluid solid medium to the mounting surface via the substrate support section to form the heat transfer layer.

22. The plasma processing apparatus of claim 19, wherein the heat transfer layer forming section forms the heat transfer layer on the mounting surface by placing the temperature adjustment object on the mounting surface having the heat transfer layer formed on its lower surface.

23. The plasma processing apparatus of any one of claims 19 to 22, wherein the heat transfer layer forming part forms the heat transfer layer on the mounting surface when the temperature adjustment object is located inside the processing container and away from the mounting surface.

24. The plasma processing apparatus of any one of claims 19 to 22, wherein at least one of the temperature adjustment target system substrate or the edge ring arranged in such a way as to surround the substrate placed on the mounting surface.

25. The plasma processing apparatus of any one of claims 19 to 22, wherein the substrate support portion has an electrostatic chuck, and the control portion controls the process of adsorbing and holding the temperature adjustment object on the mounting surface by means of the electrostatic force generated by the electrostatic chuck.