A method for manufacturing an organic light-emitting display device

Abstract

A method for manufacturing an organic light-emitting display device may form an anode on each of a plurality of sub-pixels on a substrate, form a plurality of embankments between the plurality of sub-pixels, and form a plurality of protrusions on the plurality of embankments. The method may further form a first connecting structure on a first side of a first protrusion adjacent to a red sub-pixel, and form a first organic light-emitting element on the red sub-pixel using a first photolithography process. The method may further form a second connecting structure on a second side of a first protrusion adjacent to a green sub-pixel and a second protrusion, and form a second organic light-emitting element on the green sub-pixel using a second photolithography process. The method may further form a third connecting structure on a second side of a second protrusion adjacent to a blue sub-pixel, and form a third organic light-emitting element on the blue sub-pixel using a third photolithography process.

Description

Technical Field

[0001] These embodiments relate to a method of manufacturing an organic light emitting display device. Prior Art

[0002] As the demand for portable information media increases, attempts to apply organic light emitting display devices to various thin and light information electronic devices are expanding. Recently, organic light emitting display devices have been applied to product groups such as portable PCs or automobiles, rather than TVs or mobile phones. Since organic light emitting display devices applied to mobile PCs or automobiles are driven in a fixed image manner for a long time, a long lifespan is required. To obtain a long lifespan, light extraction from the organic light emitting elements should be maximized. In addition, to reduce costs, it is important to expand the technology to be able to produce at least the 8.5th generation (2200x2,500mm) and more preferably the 10.5th generation (3370x2940mm) on a substrate 110. To produce long-lived organic light emitting elements, each sub-pixel having an upward light-emitting structure and a side-by-side structure must be used as the structure of the organic light emitting element having two or more stacks.

[0003] Such an organic light emitting display device can be obtained by using a deposition device using a fine metal mask (FMM), hereinafter referred to as FMM. However, since production operations must be carried out only in a batch method rather than an on-line method, the deposition method using FMM has a problem of low productivity. In addition, there is a problem of low pixel position accuracy (PPA) between the FMM and the substrate. Therefore, the emission area ratio (EAR) is small, which limits the product lifespan. Here, the emission area ratio is the value obtained by dividing the emission area of the sub-pixel by the area of the sub-pixel.

[0004] Therefore, the development of a novel deposition method to solve the foregoing problems and an organic light emitting display device having a novel structure of an organic light emitting element using this novel deposition method is urgently needed. Summary of the Invention

[0005] An object of an embodiment is to solve the foregoing and other problems.

[0006] Another object of an embodiment is to provide an organic light emitting display device having a novel structure.

[0007] Another object of the embodiment is to provide an organic light emitting display device capable of improving the lifespan.

[0008] Another object of the embodiment is to provide an organic light emitting display device capable of improving productivity and yield.

[0009] Another object of the embodiment is to provide an organic light emitting display device capable of improving image quality.

[0010] The technical problems of the embodiment are not limited to those described in this case, and include those that can be understood through the description of the present invention.

[0011] To achieve the above or other objects, according to one aspect of the embodiment, a method of manufacturing an organic light emitting display device includes: forming an anode in each of a red sub-pixel, a green sub-pixel, and a blue sub-pixel on a substrate; forming a first bank between the red sub-pixel and the green sub-pixel and forming a second bank between the green sub-pixel and the blue sub-pixel; respectively forming a first protrusion and a second protrusion on each of the first bank and the second bank; forming a first connection structure on a first side portion of the first protrusion adjacent to the red sub-pixel, and forming a first organic light emitting element on the red sub-pixel using a first photolithography process; forming a second connection structure on a second side portion of the first protrusion adjacent to the first side portion of the green sub-pixel and the second protrusion, and forming a second organic light emitting element on the green sub-pixel using a second photolithography process; and forming a third connection structure on a second side portion of the second protrusion adjacent to the blue sub-pixel, and forming a third organic light emitting element in the blue sub-pixel using a third photolithography process, wherein each of the first organic light emitting element to the third organic light emitting element includes an anode, an organic light emitting layer including a hole injection layer, and a cathode, wherein each of the first connection structure to the third connection structure includes an auxiliary electrode electrically connecting the cathode, and each cathode respectively contacts one end of the hole injection layer; and wherein the formation of the first bank and the second bank includes: respectively forming an open structure configured to isolate the hole injection layer in the first bank and the second bank.

[0012] The formation of the above open structure may include forming a blocking layer that recesses inward from a first side portion and a second side portion of the first bank and a first side portion and a second side portion of the second bank, respectively.

[0013] The formation of the above first organic light emitting element may include depositing and patterning a first organic light emitting layer including a first hole injection layer and a first cathode on the substrate to form the first organic light emitting layer and the first cathode on the red sub-pixel and the first bank. The first cathode may contact one end of the first hole injection layer and the auxiliary electrode of the first connection structure.

[0014] The above-mentioned first organic light-emitting element can be configured to be isolated from the first open structure formed corresponding to the first side portion of the first bank.

[0015] The formation of the above-mentioned second organic light-emitting element may include depositing and patterning a second organic light-emitting layer including a second hole injection layer and a second cathode on a substrate to form the second organic light-emitting layer and the second cathode on the green sub-pixel, the first bank, and the second bank. The second cathode may contact one end of the second hole injection layer and the auxiliary electrode of the second connection structure.

[0016] The above-mentioned second organic light-emitting element can be configured to be isolated from the second open structure formed corresponding to the second side portion of the first bank and the first side portion of the second bank.

[0017] The formation of the above-mentioned third organic light-emitting element may include depositing and patterning a third organic light-emitting layer including a third hole injection layer and a third cathode on a substrate to form the third organic light-emitting layer and the third cathode on the blue sub-pixel and the second bank. The third cathode may contact one end of the third hole injection layer and the auxiliary electrode of the third connection structure.

[0018] The above-mentioned third organic light-emitting element can be configured to be isolated from the third open structure formed corresponding to the second side portion of the second bank.

[0019] The formation of the above-mentioned cathode may include forming a first conductive layer configured to electrically connect the auxiliary electrode. The first challenge layer includes a Mg:Ag alloy.

[0020] The formation of the above-mentioned cathode may include forming a first conductive layer and a second conductive layer on the first conductive layer to electrically connect the auxiliary electrode. The first conductive layer may include a Mg:Ag alloy, and the second conductive layer may include a transparent conductive oxide material.

[0021] The above-mentioned method may further include forming a first color filter layer to a third color filter layer on the first organic light-emitting element to the third organic light-emitting element.

[0022] The above-mentioned method may further include forming a packaging layer on the first organic light-emitting element, the second organic light-emitting element, and the third organic light-emitting element.

[0023] The efficacy of the organic light-emitting display device according to the embodiment is described as follows.

[0024] According to at least one embodiment, since there is no need to use an FMM, there are advantages that the process is simplified and the process cost can be reduced.

[0025] According to at least one embodiment, there are the following advantages, that is, since there is no need to use an FMM, the EAR in the sub-pixel increases, and thus the lifespan can be improved.

[0026] According to at least one embodiment, by depositing the organic light-emitting element on a large-area substrate in an in-line deposition system, there are advantages that the production efficiency, yield, and material utilization efficiency can be improved.

[0027] The additional applicable scope of the embodiment will be clearly understandable from the following embodiments. However, since various changes and modifications within the idea and scope of the embodiment can be clearly understood by those with ordinary knowledge in the technical field to which the present invention pertains, the embodiments and specific embodiments (such as preferred embodiments) should be understood to be presented only by way of example. Brief Description of the Drawings

[0028] [FIG. 1] schematically shows a plan view of an organic light-emitting display device according to a first embodiment. [FIG. 2] shows a plan view of a pixel of FIG. 1. [FIG. 3] shows a circuit diagram of an organic light-emitting display device according to an embodiment. [FIG. 4A] is a cross-sectional view of the pixel of FIG. 2 along line segment A-A'. [FIG. 4B] is a cross-sectional view of the pixel of FIG. 2 along line segment B-B'. [FIGS. 5A] to [FIG. 5O] show the manufacturing process of an organic light-emitting display device according to a first embodiment. [FIG. 6] is an enlarged cross-sectional view of the asymmetric open-connection structure of FIG. 5O. [FIG. 7] shows a cross-sectional view of the open structure of FIG. 6. [FIGS. 8A] to [FIG. 8E] show the manufacturing process of forming an open structure according to an embodiment. [FIGS. 9A] to [FIG. 9P] show a double-mask process for forming an asymmetric open-connection structure according to an embodiment. [FIGS. 10A] to [FIG. 10H] show a single-mask process for forming an asymmetric open-connection structure according to an embodiment. [FIGS. 11A] to [FIG. 11C] show another modified process of the process of FIGS. 10E to 10G. [FIG. 12A] to [FIG. 12D] illustrate the process of generating a residual film during the process of forming a red sub-pixel. [FIG. 13A] illustrates the residual film generated during the process of forming a red sub-pixel. [FIG. 13B] illustrates a process in which no residual film is generated. [FIG. 14A] to [FIG. 14D] illustrate the process of forming a red sub-pixel such that no residual film is generated on the second side portion adjacent to the first protrusion of the green sub-pixel. [FIG. 15A] to [FIG. 15K] illustrate the detailed process of forming a red sub-pixel using the first JIT process technology. [FIG. 16A] to [FIG. 16J] illustrate the detailed process of forming a green sub-pixel using the first JIT process technology. [FIG. 17A] to [FIG. 17K] illustrate the detailed process of forming a blue sub-pixel using the first JIT process technology. [FIG. 18] illustrates the substrate structure before immediately performing the second JIT process technology. [FIG. 19] illustrates the first process of forming a connection structure using the second JIT process technology before forming a green organic light-emitting element. [FIG. 20] illustrates the second process of forming a connection structure using the second JIT process technology before forming a green organic light-emitting element. [FIG. 21A] to [FIG. 21K] illustrate the detailed process of forming a red sub-pixel using the second JIT process technology. [FIG. 22A] to [FIG. 22M] illustrate the detailed process of forming green and blue sub-pixels using the second JIT process technology. [FIG. 23] illustrates the substrate structure before immediately performing the third JIT process technology. [FIG. 24] illustrates the process of forming a connection structure using the third JIT process technology before forming a green organic light-emitting element. [FIG. 25] illustrates an organic light-emitting display device manufactured using the third JIT process technology.

[0029] The sizes, shapes, dimensions, etc. of the elements shown in the drawings may be different from the actual elements. In addition, although the same elements are drawn with different sizes, shapes, dimensions, etc. between the drawings, this is only an example in the drawings, and the same elements have the same sizes, shapes, dimensions, etc. in the drawings. Embodiments

[0030] Hereafter, the embodiments disclosed in this specification will be described in detail with reference to the accompanying drawings. However, regardless of the reference numbers, the same or similar elements are given the same reference numbers, and redundant descriptions thereof are omitted. For the convenience of writing the specification, suffixes such as "module" and "unit" for each element used in the following description may be interchangeably given or used, and such suffixes themselves do not have meanings or roles different from each other. In addition, the accompanying drawings are used to simply understand the embodiments in this specification, and the technical idea disclosed in this specification is not limited by the accompanying drawings. In addition, when an element such as a layer, a region, or a substrate is described as being "on" another element, this means that the element can be directly on the other element or there is another intermediate element therebetween.

[0031] Hereafter, an organic light-emitting display device having a side-by-side structure manufactured using a lithography process is disclosed. This structure is referred to as Ph-SbS (side-by-side structure by photolithography). By using the lithography process, since an FMM does not need to be used, the process can be simplified and the process cost can be reduced. In addition, the EAR in the sub-pixels can be improved, so that the lifespan can be improved. In addition, since the organic light-emitting elements are deposited on a large-area substrate in an on-line deposition system, the productivity, yield, and material utilization efficiency can be improved.

[0032] Hereafter, the red sub-pixel SPr can be named the first sub-pixel, the green sub-pixel SPg can be named the second sub-pixel, and the blue sub-pixel SPb can be named the third sub-pixel. In addition, the red organic light-emitting element 120r can be named the first organic light-emitting element, the green organic light-emitting element 120g can be named the second organic light-emitting element, and the blue organic light-emitting element 120b can be named the third organic light-emitting element.

[0033] Hereafter, the organic light-emitting display device 100 is a top-emission type that emits light in the upward direction of the substrate 110 to display an image. However, a bottom-emission type that emits light in the downward direction of the substrate 110 to display an image may also be included in the technical idea of the present invention.

[0034] Hereafter, the schematic reference number of the auxiliary electrode may be given as AC as shown in FIG. 3, unless a different schematic reference number is given.

[0035] FIG. 1 schematically shows a plan view of an organic light-emitting display device according to a first embodiment. FIG. 2 shows a plan view of one pixel of FIG. 1.

[0036] Referring to FIGS. 1 and 2, the organic light emitting display device 100 according to the first embodiment may include a plurality of pixels P arranged in a matrix. The pixel P may be located in the display area AA. The remaining area outside the display area AA may be a non-display area NAA.

[0037] Each pixel P may include, for example, a red sub-pixel SPr, a green sub-pixel SPg, and a blue sub-pixel SPb. For example, a red organic light emitting element 120r may be disposed in the red sub-pixel SPr, a green organic light emitting element 120g may be disposed in the green sub-pixel SPg, and a blue organic light emitting element 120b may be disposed in the blue sub-pixel SPb. The drawings illustrate a pixel P including three sub-pixels SPr, SPg, SPb, but more sub-pixels may be included.

[0038] Although the drawings illustrate that the area of the blue sub-pixel SPb is larger than the area of the red sub-pixel SPr or the green sub-pixel SPg, other variations are possible.

[0039] Each sub-pixel SPr, SPg, SPb may include a light emitting area EA and a non-light emitting area NEA. The light emitting area EA is the area where the organic light emitting elements 120r, 120g, 120b of each sub-pixel SPr, SPg, SPb are disposed, and the non-light emitting area NEA may be the remaining area other than the light emitting area EA in each sub-pixel SPr, SPg, SPb.

[0040] Meanwhile, a first power line PL1 and a second power line PL2 may be provided to supply power to each sub-pixel SPr, SPg, SPb. A first power terminal 101 may be electrically connected to one end of the first power line PL1, and a second power terminal 102 may be electrically connected to one end of the second power line PL2. The first power terminal 101 and the second power terminal 102 may be electrically connected to a power supply unit (not shown) to receive a first potential voltage and a second potential voltage. The second potential voltage is greater than the first potential voltage, and the first potential voltage may be grounded.

[0041] The first power line PL1 and the second power line PL2 may be disposed between the non-light emitting areas NEA along the first direction X. The first power line PL1 and the second power line PL2 may be electrically connected to each sub-pixel SPr, SPg, SPb.

[0042] The contact pad 103 may be located in the non-light emitting area NEA. The first power line PL1 may be electrically connected to the contact pad 103.

[0043] The auxiliary electrode (AC in FIG. 3) can be positioned in the non-emitting area NEA. The auxiliary electrode AC can be positioned in the non-emitting area NEA along the second direction Y, but is not limited thereto.

[0044] The auxiliary electrode AC can be positioned in the non-emitting area NEA adjacent to each sub-pixel SPr, SPg, SPb. The auxiliary electrode AC can be electrically connected to the first power line PL1 through the contact pad 103.

[0045] The first power line PL1, the contact pad 103, and the auxiliary electrode AC can be disposed in different layers.

[0046] The auxiliary electrode AC can be electrically connected to the cathodes of the adjacent organic light-emitting elements 120r, 120g, 120b of the adjacent sub-pixels SPr, SPg, SPb. For example, when the auxiliary electrode AC is positioned between the red sub-pixel SPr and the green sub-pixel SPg, the auxiliary electrode AC can be electrically connected to the cathode of the red organic light-emitting element 120r and the cathode of the green organic light-emitting element 120g.

[0047] Therefore, the auxiliary electrode AC can supply the first potential voltage from the first power line PL1 to the cathodes of the organic light-emitting elements 120r, 120g, 120b.

[0048] At the same time, the second power line PL2 can be electrically connected to the driving circuits 106 of the sub-pixels SPr, SPg, SPb, such as driving transistors, but is not limited thereto. Therefore, when a specific sub-pixel is selected in response to a scanning signal through a specific gate line, light having a brightness corresponding to the current flowing in the driving transistor of the specific sub-pixel can be emitted by the first potential voltage of the first power line PL1 and the second potential voltage of the second power line PL2.

[0049] The organic light-emitting elements 120r, 120g, 120b can be arranged in a strip shape along the second direction Y. That is to say, the organic light-emitting elements 120r, 120g, 120b can be continuously arranged along the second direction Y without being separated. For example, the red organic light-emitting element 120r can be continuously arranged along the second direction Y, the green organic light-emitting element 120g can be continuously arranged along the second direction Y, and the blue organic light-emitting element 120b can be continuously arranged along the second direction Y.

[0050] For another example, the organic light-emitting elements 120r, 120g, and 120b can be separated into pixel P units or row-line units along the second direction Y. That is to say, the red organic light-emitting element 120r can be separated into pixel P units or row-line units along the second direction Y, the green organic light-emitting element 120g can be separated into pixel P units or row-line units along the second direction Y, and the blue organic light-emitting element 120b can be separated into pixel P units or row-line units along the second direction Y.

[0051] The red sub-pixels SPr, the green sub-pixels SPg, and the blue sub-pixels SPb can be alternately arranged in a column-line unit along the first direction X. That is to say, the red sub-pixels SPr, the green sub-pixels SPg, and the blue sub-pixels SPb with different colors can be sequentially positioned along the first direction X to implement an organic light-emitting display device having a side-by-side structure.

[0052] At the same time, the asymmetric open-connection (AOC) structure 105 can be positioned in the non-light-emitting area NEA. In one embodiment, the asymmetric open-connection structure 105 may include a connection structure 105A and an open structure 105B. Due to the difference ratio of the depth and the gap in the undercut structure of the connection structure 105A and the open structure 105B, it can be named the asymmetric open-connection structure 105. The depth can represent the width of the undercut structure in the horizontal direction, and the gap can represent the width of the undercut structure in the vertical direction.

[0053] As will be described later, the lateral leakage current between the sub-pixels SPr, SPg, and SPb can be prevented by the asymmetric open-connection structure 105. The lateral leakage current can refer to the leakage current flowing between adjacent sub-pixels SPr, SPg, and SPb in the first direction X. In addition, the electrical short circuit between the anode and the cathode of the corresponding sub-pixels SPr, SPg, and SPb can be prevented by the asymmetric open-connection structure 105. Therefore, by using the asymmetric open-connection structure 105, the color spots caused by the leakage current can be reduced, and the luminous efficiency and the brightness can be significantly improved.

[0054] The connection structure 105A can be a structure that electrically connects the auxiliary electrode AC to the cathodes of the organic light-emitting elements 120r, 120g, and 120b respectively. The open structure 105B can be a structure that separates the layers (such as the hole injection layer, charge generation layer, etc.) containing the low-resistance organic light-emitting materials of the organic light-emitting elements 120r, 120g, and 120b respectively, thereby preventing an electrical short circuit between the anode and the cathode and reducing the leakage current between sub-pixels. The asymmetric open-connection structure 105 can also be referred to as a "paradoxical open-connection" structure.

[0055] FIG. 3 shows a circuit diagram of an organic light-emitting display device according to an embodiment. FIG. 3 can be a circuit diagram of the electrical connection from the first power supply terminal 101 and the second power supply terminal 102 to the green sub-pixel SPg in FIG. 2. The circuit diagram shown in FIG. 2 can be similarly applied to the circuit diagram of the electrical connection from the first power supply terminal 101 and the second power supply terminal 102 to the red sub-pixel SPr or the blue sub-pixel SPb.

[0056] As shown in FIG. 3, the first power supply terminal 101 and the second power supply terminal 102 can be disposed in the non-display area NAA, and the first power supply line PL1 and the second power supply line PL2 can be disposed in the non-display area NAA and the display area AA.

[0057] The contact pad 103 can be disposed in the non-light-emitting area NEA and can be electrically connected to the first power supply line PL1. The first power supply line PL1 can be electrically connected to the auxiliary electrode AC through the contact pad 103.

[0058] The organic light-emitting element 120g can be disposed in the light-emitting area EA of the sub-pixel SPg, and the connection structure 105A and the open structure 105B can be disposed in the non-light-emitting area NEA. The asymmetric open-connection structure 105 shown in FIG. 2 can be configured by the connection structure 105A and the open structure 105B. The auxiliary electrode AC can be electrically connected to the cathode 123g of the organic light-emitting element 120g through the connection structure 105A. The hole injection layer of the organic light-emitting element 120g can be electrically isolated through the open structure 105B located between the anode 121g and the cathode 123g.

[0059] As shown in FIG. 3, various resistances can be formed between the components. Each resistance can be defined as follows.

[0060] R1: The contact resistance between the contact pad 103 and the auxiliary electrode AC

[0061] R2: Resistance value between the auxiliary electrode AC and the cathode

[0062] R4: Resistance value between the anode 121g and the cathode 123g due to the hole injection layer etc. provided in the horizontal direction

[0063] R5: Resistance value between the anode 121g and the cathode 123g due to the plurality of organic light-emitting layers etc. provided in the vertical direction

[0064] R6: Resistance value between the first power line PL1 and the contact pad 103

[0065] R7: Resistance value between the first power line PL1 and the auxiliary electrode AC

[0066] Among the above resistance values, since the hole injection layer etc. forming the fourth resistance value R4 is made of a low-resistance organic light-emitting material, leakage current easily flows through the hole injection layer etc. When the leakage current flows through the hole injection layer etc., an electrical short circuit between the anode 121g and the cathode 123g may cause light to be emitted from non-corresponding sub-pixels SPr, SPg, SPb, or the brightness of the light may be significantly lower than the desired brightness.

[0067] In the above embodiment, the hole injection layer corresponding to the open structure 105B can be isolated by the open structure 105B, thereby blocking the leakage current flowing through the hole injection layer etc.

[0068] In the above embodiment, the cathode 123g can be easily connected to the auxiliary electrode AC through the connection structure 105A, and the deposition area of the organic light-emitting element 120g can be maximized, thereby improving the light-emitting efficiency.

[0069] FIG. 4A is a cross-sectional view of the pixel of FIG. 2 along the line segment A-A'. FIG. 4B is a cross-sectional view of the pixel of FIG. 2 along the line segment B-B'. FIG. 4C is a cross-sectional view of the pixel of FIG. 2 along the line segment C-C'.

[0070] Referring to FIGS. 1, 2 and 4A to 4C, the organic light-emitting display device according to the first embodiment may include a plurality of dams 111-1, 111-2, a plurality of protrusions 130-1, 130-2, and a plurality of organic light-emitting elements 120r, 120g, 120b, etc.

[0071] A plurality of dams 111-1, 111-2, a plurality of protrusions 130-1, 130-2, and a plurality of organic light-emitting elements 120r, 120g, 120b can be disposed on a substrate 110. The plurality of dams 111-1, 111-2, the plurality of protrusions 130-1, 130-2, and / or the plurality of organic light-emitting elements 120r, 120g, 120b can be respectively disposed on the substrate 110 in a strip shape along a second direction Y. In this example, sub-pixels of the same color can be disposed along the second direction Y. For example, a plurality of red sub-pixels SPr can be disposed in a strip shape along the second direction Y. The dams 111-1, 111-2 can include an inorganic material or an organic material. For example, the dams 111-1, 111-2 can include an inorganic material such as SiNx, SiON, etc.

[0072] Meanwhile, as shown in FIG. 4C, a lateral dam 111-3 can be disposed in a column line unit along the second direction Y. Alternatively, the protrusion may not be disposed in the column line unit along the second direction Y. That is, the protrusion along the second direction Y may not be disposed on the lateral dam 111-3.

[0073] The first dam 111-1 and the second dam 111-2 can be referred to as longitudinal dams to distinguish them from the lateral dam 111-3.

[0074] A plurality of sub-pixels SPr, SPg, SPb can be separated from each other by a plurality of dams 111-1, 111-2. The first dam 111-1 can be disposed between the red sub-pixel SPr and the green sub-pixel SPg, and the second dam 111-2 can be disposed between the green sub-pixel SPg and the blue sub-pixel SPb. Although not shown, a third dam can be disposed between the blue sub-pixel SPb and another red sub-pixel SPr.

[0075] A plurality of organic light-emitting elements 120r, 120g, 120b can be spatially separated and electrically isolated from each other by the dams 111-1, 111-2. Therefore, the lateral leakage current between the sub-pixels SPr, SPg, SPb can be blocked, so that color spots can be enhanced and the luminous efficiency and brightness can be improved.

[0076] The red organic light-emitting element 120r can be disposed in the red sub-pixel SPr, the green organic light-emitting element 120g can be disposed in the green sub-pixel SPg, and the blue organic light-emitting element 120b can be disposed in the blue sub-pixel SPb.

[0077] The plurality of dams 111-1 and 111-2 may have a lattice shape. For example, the dams 111-1 and 111-2 may be disposed along the periphery of the sub-pixels SPr, SPg, and SPb. That is, the dams 111-1 and 111-2 may be disposed between adjacent sub-pixels SPr, SPg, and SPb along the first direction X and between adjacent sub-pixels SPr, SPg, and SPb along the second direction Y. In this example, adjacent sub-pixels SPr, SPg, and SPb along the first direction X may have different colors, and adjacent sub-pixels SPr, SPg, and SPb along the second direction Y may have the same color.

[0078] The plurality of organic light-emitting elements 120r, 120g, and 120b may be separated from each other by the plurality of dams 111-1 and 111-2. The plurality of dams 111-1 and 111-2 may be arranged to separately distinguish the organic light-emitting elements 120r, 120g, and 120b. The red organic light-emitting element 120r and the green organic light-emitting element 120g may be separated by the first dam 111-1, and the green organic light-emitting element 120g and the blue organic light-emitting element 120b may be separated by the second dam 111-2.

[0079] Meanwhile, the organic light-emitting display device according to this embodiment may include an open structure 105B in the edge region of each of the plurality of dams 111-1 and 111-2. For example, the open structure 105B may be disposed in the edge region of the lower side of each of the plurality of dams 111-1 and 111-2, but is not limited thereto.

[0080] The open structure 105B may be disposed in the edge region of the dams 111-1 and 111-2 between the sub-pixels SPr, SPg, and SPb along the first direction X. The open structure 105B may be disposed in the edge region of the dams 111-1 and 111-2 between the sub-pixels SPr, SPg, and SPb along the second direction Y.

[0081] When the organic light-emitting elements 120r, 120g, and 120b are deposited on the dams 111-1 and 111-2, some layers of the organic light-emitting elements 120r, 120g, and 120b may be isolated by the open structure 105B. For example, the open structure 105B may isolate the low-resistance layers of the respective organic light-emitting elements 120r, 120g, and 120b. The low-resistance layer may include, for example, a hole injection layer, a charge generation layer, etc. The low-resistance layer may refer to a layer having a resistance lower than that of a high-resistance layer (such as an organic light-emitting layer, an electron transport layer, an electron injection layer, etc.).

[0082] For example, the organic light-emitting layers 122r, 122g, and 122b of the organic light-emitting elements 120r, 120g, and 120b may have a separation structure 125-1 to 125-3 corresponding to the open structure 105B. The separation structure 125-1 to 125-3 may refer to a shape in which some layers of the organic light-emitting layers 122r, 122g, and 122b are isolated. Thus, in the separation structure 125-1 to 125-3, for example, a hole injection layer, a charge generation layer, etc. may be isolated.

[0083] The open structure 105B may include at least one or more blocking layers 113 that are recessed inward from the sides of the dams 111-1 and 111-2. An undercut structure may be formed at the edge regions of the dams 111-1 and 111-2 by the blocking layers 113. The blocking layers 113 may include a silicon-based inorganic material, a metal, etc. In the case of a metal, aluminum (Al), molybdenum (Mo), a molybdenum alloy, etc. may be used, but are not limited thereto.

[0084] When the organic light-emitting elements 120r, 120g, and 120b are deposited on the dams 111-1 and 111-2 (where the undercut structure is formed in this way), some layers (such as a hole injection layer and a charge generation layer) corresponding to the undercut structure in the organic light-emitting layers 122r, 122g, and 122b of the organic light-emitting elements 120r, 120g, and 120b may be isolated.

[0085] Meanwhile, as described above, the organic light-emitting elements 120r, 120g, and 120b corresponding to the sub-pixels SPr, SPg, and SPb may be isolated respectively.

[0086] The red organic light-emitting element 120r may include an anode 121r, a red organic light-emitting layer 122r, a cathode 123r, etc. The red organic light-emitting layer 122r may be disposed on the anode 121r, and the cathode 123r may be disposed on the red organic light-emitting layer 122r. The green organic light-emitting element 120g may include an anode 121g, a green organic light-emitting layer 122g, a cathode 123g, etc. The green organic light-emitting layer 122g may be disposed on the anode 121g, and the cathode 123g may be disposed on the green organic light-emitting layer 122g. The blue organic light-emitting element 120b may include an anode 121b, a blue organic light-emitting layer 122b, a cathode 123b, etc. The blue organic light-emitting layer 122b may be disposed on the anode 121b, and the cathode 123b may be disposed on the blue organic light-emitting layer 122b.

[0087] The anodes 121r, 121g, and 121b may include a plurality of conductive layers. The anodes 121r, 121g, and 121b may have a triple structure composed of ITO / Ag alloy / ITO. The anodes 121r, 121g, and 121b may have a triple structure composed of ITO / Ag alloy / (Ti, Mo, or MoTi).

[0088] One end of the anodes 121r, 121g, and 121b may be disposed under the dams 111-1 and 111-2. That is to say, one end of the dams 111-1 and 111-2 may be disposed on one end of the anodes 121r, 121g, and 121b. One end of the anodes 121r, 121g, and 121b may vertically overlap the dams 111-1 and 111-2.

[0089] The red organic light-emitting layer 122r, the green organic light-emitting layer 122g, and the blue organic light-emitting layer 122b may include at least one hole injection layer, and the hole injection layer includes a low-resistance organic light-emitting material.

[0090] At the same time, one end of the hole injection layer and / or the charge generation layer may contact the cathodes 123r, 123g, and 123b. In addition, the lower surface of the hole injection layer may contact the cathodes 123r, 123g, and 123b. In this example, since the resistance value of the hole injection layer is small, a leakage current may flow between the anodes 121r, 121g, and 121b and the cathodes 123r, 123g, and 123b, and an electrical short circuit may occur between the anodes 121r, 121g, and 121b and the cathodes 123r, 123g, and 123b.

[0091] However, according to an embodiment, since the hole injection layer and / or the charge generation layer is isolated by the open structure 105B in the edge regions of the dams 111-1 and 111-2, the anodes 121r, 121g, and 121b and the cathodes 123r, 123g, and 123b may be electrically separated, so that an electrical short circuit can be prevented.

[0092] At the same time, the organic light-emitting display device according to this embodiment may include a plurality of protrusions 130-1 and 130-2.

[0093] The plurality of organic light-emitting elements 120r, 120g, and 120b may be spatially separated and electrically isolated from each other by the plurality of protrusions 130-1 and 130-2. Therefore, the lateral leakage current between the plurality of sub-pixels SPr, SPg, and SPb can be blocked, so that color spots can be enhanced and the luminous efficiency and brightness can be improved.

[0094] A plurality of protrusions 130-1, 130-2 can be disposed on the upper sides of a plurality of banks 111-1, 111-2. The first protrusion 130-1 can be disposed on the upper side of the first bank 111-1 between the red sub-pixel SPr and the green sub-pixel SPg. The second protrusion 130-2 can be disposed on the upper side of the second bank 111-2 between the green sub-pixel SPg and the blue sub-pixel SPb.

[0095] The left and right sides of the protrusions 130-1, 130-2 can have a shape symmetric about the central normal line of the protrusions 130-1, 130-2, but are not limited thereto. For example, the left and right sides of the protrusions 130-1, 130-2 can each have an undercut structure. In this example, the undercut structure located on the left side and the undercut structure located on the right side can have a shape symmetric about the central normal line of the protrusions 130-1, 130-2.

[0096] The protrusions 130-1, 130-2 can have a connection structure 105A, and the connection structure 105A includes an auxiliary electrode AC, and the auxiliary electrode AC is electrically connected to the cathodes 123r, 123g, 123b.

[0097] The protrusions 130-1, 130-2 can include a first layer 131 and a second layer 132 on the first layer 131.

[0098] The side portion of the first layer 131 can be recessed from the side portion of the second layer 132 into the interior of the protrusion. Thus, an undercut structure can be formed on the side portion of the protrusion by the first layer 131 and the second layer 132. The undercut structure can have a cavity shape. For example, the undercut structure can have a U-shaped cavity shape. Thus, the undercut structure can be referred to as a U-hole, a hole portion, etc. In order to form the undercut structure, the first layer 131 and the second layer 132 can have different etching selectivities. For example, the first layer 131 can include a material with a high etching rate, and the second layer 132 can include a material with a low etching rate. Therefore, when the first layer 131 and the second layer 132 are etched after a photosensitive pattern is formed on the second layer 132, the side portion of the first layer 131 can be etched faster than the side portion of the second layer 132, so that an undercut structure can be formed on the side portions of the protrusions 130-1, 130-2.

[0099] The first layer 131 and / or the second layer 132 may include a metal or a conductive metal oxide having excellent conductivity. In the case of a metal, titanium (Ti), molybdenum (Mo), molybdenum-titanium (MoTi), aluminum (Al), copper (Cu), and their alloys can be used. In the case of a conductive metal oxide, ITO, IZO, etc. can be used.

[0100] Meanwhile, by adjusting the target-to-source distance of the vaporization source (or vaporization source device), the deposition material can be deposited on the substrate 110 at different deposition angles. The target-to-source distance can be the distance between the vaporization source and the substrate 110. The deposition angle can be the angle of an imaginary line between the vaporization source and the lower edge 132a of the second layer 132 with respect to the normal direction. For example, the longer the target-to-source distance, the smaller the deposition angle can be. The smaller the deposition angle, the closer the layer formed of the deposition material can be deposited to the adjacent sub-pixels. The larger the deposition angle, the closer the corresponding layer can be deposited to the protrusions 130-1, 130-2.

[0101] As shown in FIGS. 4A, 4B, and 4C, since the deposition material is deposited at different deposition angles, one end of the organic light-emitting layers 122r, 122g, 122b and one end of the first conductive layer 123-1 of the cathodes 123r, 123g, 123b can be positioned differently from each other.

[0102] The cathodes 123r, 123g, 123b may include a plurality of conductive layers 123-1, 123-2. For example, the cathodes 123r, 123g, 123b may include a first conductive layer 123-1 and a second conductive layer 123-2 on the first conductive layer 123-1, but three or more conductive layers can be included.

[0103] One end of the organic light-emitting layers 122r, 122g, 122b and one end of the first conductive layer 123-1 can be positioned on the upper side of the dams 111-1, 111-2. For example, one end of the organic light-emitting layers 122r, 122g, 122b can be positioned closer to the first layer 131 than one end of the first conductive layer 123-1.

[0104] The second conductive layer 123-2 can be provided over the entire area of the substrate 110. The second conductive layer 123-2 can be deposited by using a sputtering process. That is, the second conductive layer 123-2 can be provided on the upper side of the first conductive layer 123-1 of each sub-pixel SPr, SPg, SPb, on the upper side of the dams 111-1, 111-2, and on the side and upper side of the protrusions 130-1, 130-2. The second conductive layer 123-2 can contact the side of the first layer 131 and / or the lower side of the second layer 132.

[0105] For example, the first conductive layer 123-1 may include a metal having excellent conductivity, and the second conductive layer 123-2 may include a conductive oxide material. For example, the first conductive layer 123-1 may include a Mg:Ag alloy, and the second conductive layer 123-2 may include ITO, IZO, etc.

[0106] The Mg:Ag alloy can be formed as the first conductive layer 123-1 by deposition using a vaporization source. However, due to the poor step coverage characteristics of Mg:Ag, it is difficult for the deposition material containing the Mg:Ag alloy to be deposited deep into the undercut structure of the connection structure 105A. In addition, when the uniformity of the film thickness of the first conductive layer 123-1 containing the Mg:Ag alloy is insufficient, or the process margin is insufficient, the first conductive layer 123-1 may not be electrically connected to the auxiliary electrode AC included in the connection structure 105A, resulting in poor electrical connection.

[0107] To solve this problem, a conductive oxide material (such as ITO) having excellent step coverage characteristics can be deposited on the substrate 110 by a sputtering process, enabling it to be deposited deep into the undercut structure of the connection structure 105A. Therefore, the second conductive layer 123-2 can be stably deposited on the side of the first layer 131 (i.e., the auxiliary electrode AC), preventing electrical connection failures between the auxiliary electrode AC and the cathodes 123r, 123g, 123b including the first conductive layer 123-1 and the second conductive layer 123-2. In addition, since the film thickness of the first conductive layer is ensured, the stability of the production quality can be improved.

[0108] When the second conductive layer 123-2 is formed on the first conductive layer 123-1, there is no need to adjust or control the deposition angle to deposit the first conductive layer 123-1 using a vaporization source. In addition, although the organic light-emitting layers 122r, 122g, 122b and the first conductive layer 123-1 using a vaporization source are deposited freely regardless of the deposition angle, the organic light-emitting layers 122r, 122g, 122b can be deposited on the sub-pixels SPr, SPg, SPb, and the cathodes 123r, 123g, 123b can be stably connected to the auxiliary electrode AC of the protrusions 130-1, 130-2 through the second conductive layer 123-2. Therefore, when set by the combination of the above connection structure 105A and the open structure 105B, the productivity and material utilization efficiency can be improved through more free deposition processes.

[0109] In addition, when the organic light emitting display device is implemented in a top emission mode, the luminous efficiency can be improved by using a first conductive layer 123-1 containing a Mg:Ag alloy and cathodes 123r, 123g, 123b containing a semi-transmissive material by utilizing the constructive interference between anodes 121r, 121g, 121b and cathodes 123r, 123g, 123b.

[0110] Meanwhile, the protrusions 130-1, 130-2 may include a fourth layer 134 on a second layer 132. The fourth layer 134 may be omitted. The fourth layer 134 may include an inorganic material such as SiO 2, SiNx or SiONx. The fourth layer 134 may include a conductive oxide material such as ITO. The fourth layer 134 may serve as a stopper for the second layer 132. As described above, in order to form a side-by-side structure, the red sub-pixels SPr, the green sub-pixels SPg and the blue sub-pixels SPb may be etched twice respectively. At this time, when these two etchings are performed, the area or thickness of the second layer 132 may change. In this case, the deposition angle determined by the edge 132a on the lower side of the second layer 132 becomes different, and the deposition areas of the respective sub-pixels SPr, SPg, SPb become different, resulting in a reduction in image quality.

[0111] To solve the above problems, when the fourth layer 134 serving as a stopper for the second layer 132 is formed on the second layer 132, the etching of the second layer 132 can be suppressed or avoided by the fourth layer 134 even though the etching is performed twice, so that the deposition angle determined by the edge 132a on the lower side of the second layer 132 can be fixed. Therefore, since the deposition area in each of the sub-pixels SPr, SPg, SPb can be ensured to be the target area, the image quality can be improved accordingly.

[0112] Although not shown, a third layer may be provided under the first layer 131, but is not limited thereto. The third layer may include a material having a low etching rate. The third layer may include a metal or a conductive oxide material having excellent conductivity. The third layer may include an inorganic material having a low etching rate.

[0113] When the third layer includes a metal or a conductive oxide material, the third layer may be an auxiliary electrode AC.

[0114] The etching rate of the third layer may be equal to or slower than the etching rate of the second layer 132. When the second layer 132 and the third layer are etched simultaneously, since the etching rate of the third layer may be equal to or slower than the etching rate of the second layer 132, the side portion of the third layer may be positioned on the same vertical line as the side portion of the second layer 132 or may be provided to extend further from the side portion of the second layer 132 in the direction of the adjacent sub-pixel.

[0115] Meanwhile, the organic light-emitting display device according to this embodiment may include a encapsulation layer 135. The encapsulation layer 135 may be a barrier layer for preventing moisture and the like from penetrating into the organic light-emitting elements 120r, 120g, and 120b.

[0116] Meanwhile, the organic light-emitting display device according to this embodiment may include a plurality of color filter layers 140r, 140g, 140b and a plurality of encapsulation layers 141r, 141g, 141b.

[0117] The plurality of color filter layers 140r, 140g, 140b may include a resin material. Each of the plurality of encapsulation layers 141r, 141g, 141b may include a plurality of layers. Some of these layers may include an inorganic material, and other layers may include an organic material.

[0118] The red color filter layer 140r may be disposed in the red sub-pixel SPr. The red color filter layer 140r may be disposed on the red organic light-emitting element 120r in the red sub-pixel SPr, such that only the red light corresponding to the target red wavelength band set in the red color filter layer 140r can be emitted in the wavelength band of the red light emitted from the red organic light-emitting element 120r.

[0119] The green color filter layer 140g may be disposed in the green sub-pixel SPg. The green color filter layer 140g may be disposed on the green organic light-emitting element 120g in the green sub-pixel SPg, such that only the green light corresponding to the target green wavelength band set in the green color filter layer 140g can be emitted in the wavelength band of the green light emitted from the green organic light-emitting element 120g.

[0120] The blue color filter layer 140b is disposed in the blue sub-pixel SPb. The blue color filter layer 140b may be disposed on the blue organic light-emitting element 120b in the blue sub-pixel SPb, such that only the blue light corresponding to the target blue wavelength band set in the blue color filter layer 140b can be emitted in the wavelength band of the blue light emitted from the blue organic light-emitting element 120b.

[0121] Each of the plurality of color filter layers 140r, 140g, 140b may have a color filtering function of allowing only the color light of a predetermined wavelength band to be emitted.

[0122] As described above, the color filter layers 140r, 140g, and 140b can further enhance the color purity of each color compared to the case without the color filter layers, and in particular, can play a role in enhancing the change in color purity according to the viewing angle of the organic light-emitting display device having the upward light-emitting structure. Currently, a polarizer can be connected to remove the light reflected by the reflective materials of the anodes 121r, 121g, and 121b when external light is incident, but the most important role of the plurality of color filter layers 140r, 140g, and 140b is that the plurality of color filter layers 140r, 140g, and 140b can absorb external light to improve the contrast ratio and further contribute to cost reduction by removing the polarizer.

[0123] Meanwhile, the plurality of color filter layers 140r, 140g, and 140b can have the function of a photosensitive pattern to form the patterns of the encapsulation layer 135, the cathodes 123r, 123g, and 123b, and the organic light-emitting layers 122r, 122g, and 122b, respectively.

[0124] As shown in FIG. 4A, the encapsulation layer 135, the cathode 123r, and the red organic light-emitting layer 122r can be etched using the red color filter layer 140r so that they can be formed only in the red sub-pixel SPr. In this case, one end of the encapsulation layer 135, one end of the cathode 123r, and one end of the red organic light-emitting layer 122r on the first protrusion 130-1 can be positioned on the same vertical line or diagonal line.

[0125] As shown in FIG. 4B, the encapsulation layer 135, the cathode 123g, and the green organic light-emitting layer 122g can be etched using the green color filter layer 140g so that they can be formed only in the green sub-pixel SPg. In this case, one end of the encapsulation layer 135, one end of the cathode 123g, and one end of the green organic light-emitting layer 122g on the first protrusion 130-1 can be positioned on the same vertical line or diagonal line.

[0126] As shown in FIG. 4C, the encapsulation layer 135, the cathode 123b, and the blue organic light-emitting layer 122b can be etched using the blue color filter layer 140b so that only the blue sub-pixel SPb can be formed. In this case, one end of the encapsulation layer 135, one end of the cathode 123b, and one end of the blue organic light-emitting layer 122b on the first protrusion 130-1 can be positioned on the same vertical line or diagonal line.

[0127] For example, the blue organic light-emitting element 120b, the green organic light-emitting element 120g, and the red organic light-emitting element 120r can be formed in this order, but it is not limited thereto.

[0128] Meanwhile, the encapsulation layers 141r, 141g, and 141b may include a plurality of layers, and these plurality of layers include organic materials or inorganic materials.

[0129] The encapsulation layers 141r, 141g, and 141b can protect the color filter layers 140r, 140g, and 140b made of resin material from being etched. For example, when the blue encapsulation layer 141b is formed on the blue color filter layer 140b for patterning the blue organic light-emitting device 120b, the blue encapsulation layer 141b can prevent the etching of the blue color filter layer 140b when the green organic light-emitting device 120g is etched. Similarly, when the green encapsulation layer 141g is formed on the green color filter layer 140g for patterning the green organic light-emitting device 120g, the green encapsulation layer 141g can prevent the etching of the green color filter layer 140g when the red organic light-emitting device 120r is etched. Therefore, the red encapsulation layer 141r, the green encapsulation layer 141g, and the blue encapsulation layer 141b can serve as etching stop layers.

[0130] Meanwhile, each of the color filter layers 140r, 140g, and 140b may include a light scattering agent or a light diffusing agent. Since light is scattered or diffused by the light scattering agent or the light diffusing agent, the luminous efficiency can thus be improved.

[0131] Meanwhile, each of the red encapsulation layer 141r, the green encapsulation layer 141g, and the blue encapsulation layer 141b may include a plurality of layers, and these plurality of layers include inorganic materials and organic materials.

[0132] The red encapsulation layer 141r can be disposed on the red color filter layer 140r, the green encapsulation layer 141g can be disposed on the green color filter layer 140g, and the blue encapsulation layer 141b can be disposed on the blue color filter layer 140b.

[0133] Each of the red encapsulation layer 141r, the green encapsulation layer 141g, and the blue encapsulation layer 141b may include at least one or more layers. For example, each of the red encapsulation layer 141r, the green encapsulation layer 141g, and the blue encapsulation layer 141b may include a first inorganic layer, an organic layer on the first inorganic layer, a second inorganic layer on the organic layer, etc., but not limited thereto. The first inorganic layer and the second inorganic layer may include inorganic materials such as SiNx, and the organic layer may include a resin material, but not limited thereto.

[0134] According to an embodiment, the sub-pixels SPr, SPg, and SPb may be formed in sequence to manufacture an organic light-emitting display device having a side-by-side structure. For example, the blue organic light-emitting element 120b, the blue filter layer 140b, and the blue encapsulation layer 141b may be formed and patterned over the entire area of the substrate 110 using a photolithography process such that the blue sub-pixel SPb can be formed. Thereafter, the green organic light-emitting element 120g, the green filter layer 140g, and the green encapsulation layer 141g may be formed and patterned over the entire area of the substrate 110 using a photolithography process such that the green sub-pixel SPg can be formed. Thereafter, the red organic light-emitting element 120r, the red filter layer 140r, and the red encapsulation layer 141r may be formed and patterned using a photolithography process such that the red sub-pixel SPr can be formed.

[0135] Meanwhile, in the first embodiment (FIGS. 1 and 2), the red organic light-emitting element 120r, the green organic light-emitting element 120g, and the blue organic light-emitting element 120b may be arranged in a strip shape along the second direction Y.

[0136] Conversely, although not shown, the red organic light-emitting element 120r, the green organic light-emitting element 120g, and the blue organic light-emitting element 120b may be arranged at intervals in a dot shape. The red organic light-emitting element 120r may be disposed in the red sub-pixel SPr, the green organic light-emitting element 120g may be disposed in the green sub-pixel SPg, and the blue organic light-emitting element 120b may be disposed in the blue sub-pixel SPb. One pixel P may be composed of the red sub-pixel SPr, the green sub-pixel SPg, and the blue sub-pixel SPb.

[0137] For example, the red organic light-emitting element 120r and the green organic light-emitting element 120g may be separated by a row line along the second direction Y, respectively. For example, the blue organic light-emitting element 120b may be separated by two row lines along the second direction Y.

[0138] For example, the area of the blue organic light-emitting element 120b may be larger than the area of the red organic light-emitting element 120r or the green organic light-emitting element 120g. The length of the blue organic light-emitting element 120b in the second direction Y may be similar to the sum of the widths of the red organic light-emitting element 120r and the green organic light-emitting element 120g, but is not limited thereto.

[0139] In a pixel structure in which the red organic light-emitting element 120r, the green organic light-emitting element 120g, and the blue organic light-emitting element 120b are spaced apart from each other in a dot shape, there is no connection structure between sub-pixels adjacent along the first direction X (105A in FIG. 4A), but the asymmetric open-connection structure 105 (i.e., the connection structure 105A and the open structure 105B) can be provided at the edges of at least two or more of the sub-pixels SPr, SPg, SPb along the second direction Y.

[0140] FIGS. 5A to 5O illustrate the manufacturing process of the organic light-emitting display device according to the first embodiment.

[0141] As illustrated in FIG. 5A, the anodes 121r, 121g, 121b and the blocking layer 113 can be respectively formed on the red sub-pixel SPr, the green sub-pixel SPg, and the blue sub-pixel SPb on the substrate 110 through a first photosensitive pattern (not shown).

[0142] The substrate 110 may include a material having excellent insulation performance. For example, the substrate 110 may include a plastic material, a resin material, glass, etc. The substrate 110 may include a rigid material or a flexible material.

[0143] The anodes 121r, 121g, 121b can be formed to be spaced apart from each other between the red sub-pixel SPr, the green sub-pixel SPg, and the blue sub-pixel SPb. The blocking layer 113 can be formed to be spaced apart from each other between the red sub-pixel SPr, the green sub-pixel SPg, and the blue sub-pixel SPb.

[0144] The anodes 121r, 121g, 121b may include a plurality of conductive layers. The anodes 121r, 121g, 121b may have a triple structure composed of ITO / Ag alloy / ITO. The anodes 121r, 121g, 121b may have a triple structure composed of ITO / Ag alloy / (Ti, Mo or MoTi).

[0145] The blocking layer 113 may include a silicon-based inorganic material, a metal such as molybdenum (Mo), etc. Aluminum (Al), molybdenum (Mo), molybdenum alloy, etc. can be used as the metal, but are not limited thereto.

[0146] The first photosensitive pattern can be removed.

[0147] An inorganic film and a photosensitive film can be formed on the substrate 110, and the photosensitive film can be patterned to form a second photosensitive pattern 201.

[0148] The inorganic film may include an inorganic material or an organic material. For example, the inorganic film may include an inorganic material such as SiNx, SiON, etc.

[0149] The first dam 111-1 and the second dam 111-2 may be etched and formed using the second photosensitive pattern 201. The inorganic film 111a may be etched until the barrier layer 113 is exposed in the red sub-pixel SPr, the green sub-pixel SPg, and the blue sub-pixel SPb.

[0150] The first dam 111-1 may be formed on the substrate 110 between the red sub-pixel SPr and the green sub-pixel SPg. The first dam 111-1 may be disposed in the edge region of the barrier layer 113 between the red sub-pixel SPr and the green sub-pixel SPg. The second dam 111-2 may be formed on the substrate 110 between the green sub-pixel SPg and the blue sub-pixel SPb. The second dam 111-2 may be disposed in the edge region of the barrier layer 113 between the green sub-pixel SPg and the blue sub-pixel SPb.

[0151] The barrier layer 113 may be etched using the second photosensitive pattern 201 to form the open structure 105B. The open structure 105B may have an undercut structure, in which the side portions of the barrier layer 113 are recessed inward from the side portions of the first dam 111-1 and / or the second dam 111-2.

[0152] As shown in FIG. 5B, the second photosensitive pattern 201 may be removed.

[0153] As shown in FIG. 5C, the first layer 131, the second layer 132, the fourth layer 134, and the photosensitive film may be formed on the substrate 110, and the photosensitive film may be patterned to form the third photosensitive pattern 202. The fourth layer 134 may be omitted.

[0154] The first layer and the second layer 132 may have different etching selectivities. For example, the etching rate of the first layer 131 may be greater than the etching rate of the second layer 132. At least one of the first layer 131 or the second layer 132 may be an auxiliary electrode for connecting to the cathode (123r, 123g, 123b in FIG. 5O). The auxiliary electrode may be connected to the first power line (PL1 in FIG. 3). Therefore, the cathodes 123r, 123g, 123b may be electrically connected to the first power line PL1 through the auxiliary electrode.

[0155] The first layer 131 and / or the second layer 132 may include a metal or a conductive oxide material having excellent conductivity. In the case of a metal, titanium (Ti), molybdenum (Mo), molybdenum-titanium (MoTi), aluminum (Al), copper (Cu), its alloys, etc. may be used. In the case of a conductive metal oxide, ITO, IZO, etc. may be used.

[0156] The fourth layer 134 may include an inorganic material, such as SiO 2, SiNx, or SiONx. The fourth layer 134 may include a conductive oxide material, such as ITO. The fourth layer 134 may serve as a stopper for the second layer 132. That is, the fourth layer 134 may be used as an etch stop layer.

[0157] Although not shown, a third layer may be disposed under the first layer 131. That is, the third layer may be formed on the substrate 110, and the first layer 131 may be formed on the third layer. The third layer may include, for example, a metal or a conductive oxide material having excellent conductivity. Therefore, the third layer may be an auxiliary electrode.

[0158] As shown in FIG. 5D, the fourth layer 134, the second layer 132, and the first layer 131 may be etched using the third photosensitive pattern 202 to form a first protrusion 130-1 and a second protrusion 130-2 each having a connection structure 105A. The first protrusion 130-1 may be formed on a first bank 111-1 between the red sub-pixel SPr and the green sub-pixel SPg, and the second protrusion 130-2 may be formed on a second bank 111-2 between the green sub-pixel SPg and the blue sub-pixel SPb.

[0159] Since the etching rate of the first layer 131 is greater than the etching rate of the second layer 132 and / or the third layer 133, the side portions of the first layer 131 may be etched faster than the side portions of the second layer 132, such that the etching speed of the side portions of the first layer 131 is faster than the etching speed of the side portions of the second layer 132, such that an undercut structure of the connection structure 105A may be formed, in which the side portions of the first layer 131 are recessed inward from the side portions of the second layer 132.

[0160] When the fourth layer 134 is used as an etch stop layer, the second layer 132 formed under the fourth layer 134 may be protected from being etched by the fourth layer 134, such that the side portions of the second layer 132 and the side portions of the fourth layer 134 may be positioned on the same vertical line or diagonal line.

[0161] Meanwhile, although not shown, the blocking layer 113 may not be shown in the process etching of FIG. 5B and may also be etched together with the etching of the first layer 131, the second layer, and the fourth layer 134 in the process shown in FIG. 5D. Therefore, since the connection structure 105A and the open structure 105B are batch-formed using the same photosensitive pattern 202, the number of masks can be reduced, the process can be simplified, and the cost can be reduced.

[0162] The third photosensitive pattern 202 can be removed.

[0163] As shown in FIG. 5E, the blue organic light-emitting layer 122b and the first conductive layer 123-1 can be formed on the substrate 110.

[0164] Although not shown, the blue organic light-emitting layer 122b may include a hole injection layer and the like. In the case of the blue organic light-emitting device 120b having a two-layer structure, the blue organic light-emitting layer 122b may include a hole injection layer, a charge generation layer, and the like.

[0165] The first conductive layer 123-1 may include a single layer, and the single layer includes a metal such as a Mg:Ag alloy. When a deposition material made of a metal such as a Mg:Ag alloy is deposited on the substrate 110, the first conductive layer 123-1 can be formed on one side region of each of the blue sub-pixel SPb, the first bank 111-1, and the second bank 111-2. Since the deposition material is not deposited inside the undercut structure of the connection structure 105A, the first conductive layer 123-1 may not be electrically connected to the auxiliary electrode.

[0166] As shown in FIG. 5F, the second conductive layer 123-2 and a packaging layer (not shown) can be formed on the first conductive layer 123-1.

[0167] The second conductive layer 123-2 may include a conductive oxide material such as ITO. The packaging layer may include an inorganic material.

[0168] The conductive oxide material such as ITO may have excellent step coverage characteristics. Therefore, since the deposition material made of the conductive oxide material is deposited on the substrate 110 by a sputtering process, the second conductive layer 123-2 can be formed not only on one side region of each of the blue sub-pixel SPb, the first bank 111-1, and the second bank 111-2, but also inside the undercut structure of the connection structure 105A. Therefore, the second conductive layer 123-2 can be electrically connected to the auxiliary electrode in the connection structure 105A of the second protrusion 130-2.

[0169] As shown in FIG. 5G, the blue filter layer 140b can be formed on the second conductive layer 123-2. The blue filter layer 140b can include a resin material.

[0170] By using a fourth photosensitive pattern (not shown), the blue filter layer 140b, the encapsulation layer, the second conductive layer 123-2, the first conductive layer 123-1, and the blue organic light-emitting layer 122b can be etched so that the blue filter layer 140b, the encapsulation layer, the second conductive layer 123-2, the first conductive layer 123-1, and the blue organic light-emitting layer 122b can be formed in the blue sub-pixel SPb. The blue filter layer 140b, the encapsulation layer, the second conductive layer 123-2, the first conductive layer 123-1, and the blue organic light-emitting layer 122b can be formed on a side region of the second protrusion 130-2.

[0171] The cathode 123b can be disposed by the first conductive layer 123-1 and the second conductive layer 123-2. The blue organic light-emitting device 120b can be formed by the anode 121b, the blue organic light-emitting layer 122b, and the cathode 123b in the blue sub-pixel SPb.

[0172] The fourth photosensitive pattern can be removed.

[0173] As shown in FIG. 5H, the blue encapsulation layer 141b can be formed on the substrate 110.

[0174] The blue encapsulation layer 141b can be etched using a fifth photosensitive pattern (not shown) so that the blue encapsulation layer 141b can be formed on the blue filter layer 140b in the blue sub-pixel SPb.

[0175] The fifth photosensitive pattern can be removed.

[0176] As shown in FIG. 5I, the green organic light-emitting layer 122g, the first conductive layer 123-1, the second conductive layer 123-2, and the encapsulation layer 135 can be formed on the substrate 110. The cathode 123g can be disposed by the first conductive layer 123-1 and the second conductive layer 123-2. Accordingly, the green organic light-emitting device 120g can be formed by the anode 121g, the green organic light-emitting layer 122g, and the cathode 123g in the green sub-pixel SPg.

[0177] The first conductive layer 123-1 containing a metal such as Mg:Ag may not be connected to the auxiliary electrode, and the second conductive layer 123-2 containing a conductive oxide material such as ITO may be connected to the auxiliary electrode in each of the connection structures 105A of the first protrusion 130-1 and the connection structure 105A of the second protrusion 130-2.

[0178] Although not shown, the green organic light-emitting layer 122g may include a hole injection layer or the like. In the case where the green organic light-emitting device 120g has a two-layer stacked structure, the green organic light-emitting layer 122g may include a hole injection layer, a charge generation layer, and the like.

[0179] As shown in FIG. 5J, the green filter layer 140g may be formed on the substrate 110. The green filter layer 140g may include a resin material.

[0180] By using a sixth photosensitive pattern (not shown), the green filter layer 140g, the encapsulation layer 135, the cathode 123g, and the green organic light-emitting layer 122g may be etched so that the green filter layer 140g, the encapsulation layer 135, the cathode 123g, and the green organic light-emitting layer 122g may be formed in the green sub-pixel SPg. The green filter layer 140g, the encapsulation layer 135, the cathode 123g, and the green organic light-emitting layer 122g may be formed on one side region of the first protrusion 130-1 and the remaining side regions of the second protrusion 130-2.

[0181] The sixth photosensitive pattern may be removed.

[0182] As shown in FIG. 5K, the green encapsulation layer 141g may be formed on the substrate 110.

[0183] By using a seventh photosensitive pattern (not shown), the green encapsulation layer 141g may be etched so that the green encapsulation layer 141g may be formed on the green filter layer 140g in the blue sub-pixel SPb and the green sub-pixel SPg. Although not shown, the green encapsulation layer 141g may not be formed in the blue sub-pixel SPb.

[0184] The seventh photosensitive pattern may be removed.

[0185] As shown in FIG. 5L, a red organic light-emitting layer 122r, a first conductive layer 123-1, a second conductive layer 123-2, and a packaging layer 135 may be formed on a substrate 110. The cathode 123r may be disposed by the first conductive layer 123-1 and the second conductive layer 123-2. Accordingly, the red organic light-emitting device 120r may be disposed by the anode 121r, the red organic light-emitting layer 122r, and the cathode 123r in the red sub-pixel SPr.

[0186] The first conductive layer 123-1 including a metal such as Mg:Ag may not be connected to the auxiliary electrode, and the second conductive layer 123-2 including a conductive oxide material such as ITO may be connected to the auxiliary electrode in the structure 105A of the first protrusion 130-1.

[0187] Although not shown, the red organic light-emitting layer 122r may include a hole injection layer or the like. In the case where the red organic light-emitting device 120r has a two-layer stacked structure, the red organic light-emitting layer 122r may include a hole injection layer, a charge generation layer, and the like.

[0188] As shown in FIG. 5M, a red color filter layer 140r may be formed on the substrate 110. The red color filter layer 140r may include a resin material.

[0189] By using an eighth photosensitive pattern (not shown), the red color filter layer 140r, the packaging layer 135, the cathode 123r, and the red organic light-emitting layer 122r may be etched such that the red color filter layer 140r, the packaging layer 135, the cathode 123r, and the red organic light-emitting layer 122r may be formed in the red sub-pixel SPr. The red color filter layer 140r, the packaging layer 135, the cathode 123r, and the red organic light-emitting layer 122r may be formed on the remaining side regions of the first protrusion 130-1.

[0190] The eighth photosensitive pattern may be removed.

[0191] As shown in FIG. 5N, a red packaging layer 141r may be formed on the substrate 110.

[0192] By using a ninth photosensitive pattern (not shown), the red packaging layer 141r may be etched such that the red packaging layer 141r may be formed on the red color filter layer 140r in the blue sub-pixel SPb, the green sub-pixel SPg, and the red sub-pixel SPr. Although not shown, the red packaging layer 141r may not be formed in the blue sub-pixel SPb and the green sub-pixel SPg.

[0193] The ninth photosensitive pattern can be removed.

[0194] As shown in FIG. 5O, a plurality of encapsulation layers 143, 144 can be formed on the substrate 110. For example, the encapsulation layer 143 can include a resin material such as polycaprolactone (PCL), and the encapsulation layer 144 can include an inorganic material such as silicon nitride (SiNx).

[0195] Thereafter, a pad open process is performed using a tenth photosensitive pattern (not shown), such that the first power line (PL1 in FIG. 3) can be electrically connected to the auxiliary electrode through the contact pad 103, as shown in FIG. 3. The tenth photosensitive pattern can be removed.

[0196] Thereafter, after performing a defect inspection process, a repair process, etc., a protective film can be attached to the substrate 110, such that an organic light emitting display device can be manufactured.

[0197] In the above, it is described that the blue organic light emitting element 120b, the green organic light emitting element 120g, and the red organic light emitting element 120r can be sequentially formed, but the order can be changed.

[0198] FIG. 6 is an enlarged cross-sectional view of the asymmetric open-connection structure of FIG. 5O. FIG. 7 is a cross-sectional view showing the open structure of FIG. 6.

[0199] The drawings illustrate the connection structure 105A of the first protrusion 130-1 and the open structure 105B formed in the first bank 111-1, but this can also be applied to the connection structure of the second protrusion 130-2 and the open structure formed in the second bank 111-2.

[0200] As shown in FIG. 6, the connection structure 105A of the first protrusion 130-1 can have an undercut structure. The green organic light emitting layer 122g and the first conductive layer 123-1 can be formed in the green sub-pixel SPg through the undercut structure of the connection structure 105A. At this time, even if the first conductive layer 123-1 is not electrically connected to the auxiliary electrode (i.e., the first layer 131 and / or the second layer 132), the second conductive layer 123-2 can be electrically connected to the auxiliary electrode in the connection structure 105A. Therefore, the stability of the electrical connection of the cathode 123g including the first conductive layer 123-1 and the second conductive layer 123-2 can be ensured.

[0201] As shown in FIGS. 6 and 7, the green organic light-emitting layer 122g can be isolated through the open structure 105B. The green organic light-emitting device 120g can include a hole injection layer, a charge generation layer, etc. In this case, the hole injection layer and / or the charge generation layer can be isolated corresponding to the open structure 105B. Therefore, the leakage current flowing through the hole injection layer or the charge generation layer between the anode 121g and the cathode 123g can be blocked, thereby improving the light-emitting efficiency and brightness.

[0202] The open structure 105B can have an open depth OD and an open gap OD. The opening depth OD can be the depth at which the blocking layer 113 is etched. The open gap OD can be the thickness of the blocking layer 113. It is necessary to design the opening depth OD and the open gap OD such that at least the charge generation layer is isolated, and the cathode 123b of the blue organic light-emitting device 120b with the minimum thickness is not isolated.

[0203] Meanwhile, as shown in FIG. 5O, the red organic light-emitting layer 122r and the green organic light-emitting layer 122g can be separated from each other on the upper side of the first protrusion 130-1, and the green organic light-emitting layer 122g and the blue organic light-emitting layer 122g can be separated from each other on the upper side of the first protrusion 130-1. Therefore, the leakage current flowing along the first direction X between the red sub-pixel SPr, the green sub-pixel SP, and the blue sub-pixel SPb, that is, the lateral leakage current, can be blocked, thereby improving the light-emitting efficiency and brightness.

[0204] Meanwhile, as described above, the open structure 105B can be formed by the blocking layer 113. During the process of forming the open structure 105B, yield management such as dark spot defects is very important.

[0205] The anodes 121r, 121g, 121b can have a triple structure composed of ITO / Ag alloy / ITO. The anodes 121r, 121g, 121b can be formed by wet etching. During wet etching, compounds of silver (Ag) may be generated and may remain in the form of particles. Therefore, it may be important for yield management to remove the particles composed of the compounds through Ag.

[0206] In addition, the particles generated during the dry etching of the layers other than the anodes 121r, 121g, 121b can also remain on the surfaces of the anodes 121r, 121g, 121b, resulting in dark spot defects.

[0207] Referring to FIGS. 8A to 8E, a method of forming the open structure 105B to remove these particles will be described.

[0208] FIGS. 8A to 8E illustrate a process for forming an open structure according to an embodiment. The drawings illustrate a process for forming an open structure 105B in a first bank 111-1 adjacent to a green sub-pixel SPg, but the same process can be applied to the process of forming an open structure in a second bank 111-2.

[0209] As illustrated in FIG. 8A, an anode 121g and a blocking layer 113 can be formed on a substrate 110, and a photosensitive pattern 203 can be formed on the blocking layer 113.

[0210] As illustrated in FIG. 8B, the anode 121g and the blocking layer 113 can be etched using the photosensitive pattern 203 such that the anode 121g and the blocking layer 113 can be formed in the green sub-pixel SPg.

[0211] The photosensitive pattern 203 can be removed.

[0212] When the photosensitive pattern 203 is removed, particles 161 can be retained on the upper surface of the blocking layer 113.

[0213] As illustrated in FIG. 8C, an inorganic film 111a can be formed on the substrate 110. In this case, the particles 161 can be located between the blocking layer 113 and the inorganic film 111a without being removed.

[0214] As illustrated in FIG. 8D, a photosensitive pattern 203 can be formed on the inorganic film 111a. The inorganic film 111a can be etched using the photosensitive pattern 203 such that a first bank 111-1 can be formed between a red sub-pixel SPr and a green sub-pixel SPg.

[0215] Since the inorganic film 111a is etched until the blocking layer 113 is exposed, the particles 161 remaining on the upper surface of the blocking layer 113 can be removed through this etching process.

[0216] However, another particle 162 can remain on the upper surface of the blocking layer 113 through the etching of the inorganic film 111a.

[0217] As illustrated in FIG. 8E, the blocking layer 113 can be etched using the photosensitive pattern 203 to form an open structure 105B.

[0218] Since the blocking layer 113 is etched until the anode 121g is exposed, another particle 162 remaining on the upper surface of the blocking layer 113 can be removed.

[0219] The photosensitive pattern 203 can be removed. The photosensitive pattern 203 can be the second photosensitive pattern 201 illustrated in FIG. 5A.

[0220] After performing the above etching processes, a cleaning process can be performed.

[0221] In addition to the formation process of the open structure 105B as described above, the particles 161 and 162 generated during wet etching or dry etching can be removed through the cleaning process performed after each etching process, thereby preventing poor image quality and improving the yield.

[0222] Meanwhile, the asymmetric open-connection structure 105 according to this embodiment can be formed via a double-mask process (FIGS. 9A to 9P) or a single-mask process (FIGS. 10A to 10H).

[0223] [Double-mask process]

[0224] FIGS. 9A to 9P illustrate a double-mask process for forming an asymmetric open-connection structure according to an embodiment. The drawings illustrate the process of forming the open structure 105B in the first bank 111-1 adjacent to the green sub-pixel SPg, but the same process can be applied to the process of forming the open structure in the second bank 111-2.

[0225] As illustrated in FIG. 9A, after the substrate 110 is cleaned, the anode 121g can be formed on the substrate 110.

[0226] Specifically, by sequentially depositing ITO, an Ag alloy, and ITO on the substrate 110, the anode 121g composed of ITO / Ag alloy / ITO can be formed on the substrate 110.

[0227] As illustrated in FIG. 9B, after the substrate 110 is cleaned, a blocking layer 113 such as molybdenum (Mo) can be formed on the anode 121g. In addition to molybdenum (Mo), a silicon-based inorganic material can be used.

[0228] As illustrated in FIG. 9C, after the substrate 110 is cleaned, the photosensitive pattern 204 can be formed on the blocking layer 113.

[0229] As shown in FIG. 9D, the blocking layer 113 can be wet-etched using the photosensitive pattern 204.

[0230] As shown in FIG. 9E, the ITO / Ag alloy / ITO of the anode 121g can be batch-etched using the photosensitive pattern 204. The sides of the blocking layer 113 and the sides of the anode 121g can be positioned on the same vertical line or diagonal line, but are not limited thereto.

[0231] As shown in FIG. 9F, the photosensitive pattern 204 can be removed.

[0232] As shown in FIG. 9G, after the substrate 110 is cleaned, the inorganic film 111a (such as silicon nitride (SiNx)) can be deposited on the substrate 110.

[0233] As shown in FIG. 9H, after the substrate 110 is cleaned, the photosensitive pattern 205 can be formed on the inorganic film 111a.

[0234] As shown in FIG. 9I, after the substrate 110 is cleaned, the inorganic film 111a can be dry-etched using the photosensitive pattern 205 to form the first dam 111-1. The first dam 111-1 can be formed on the substrate 110 between the red sub-pixel SPr and the green sub-pixel SPg.

[0235] As shown in FIG. 9J, the photosensitive pattern 205 can be removed.

[0236] As shown in FIG. 9K, after the substrate 110 is cleaned, titanium (Ti) can be deposited on the substrate 110 to form the third layer 133.

[0237] As shown in FIG. 9L, the first layer 131 and the second layer 132 can be formed by sequentially depositing aluminum (Al) and titanium (Ti) on the third layer 133.

[0238] As shown in FIG. 9M, after the substrate 110 is cleaned, the photosensitive pattern 206 can be formed on the second layer 132.

[0239] As shown in FIG. 9N, after the substrate 110 is cleaned, the second layer 132, the first layer 131, and the third layer 133 can be dry-etched in sequence using the photosensitive pattern 206 to form the first protrusion 130-1.

[0240] As shown in FIG. 9O, after the substrate 110 is cleaned, the first layer 131 and the barrier layer 113 can be wet-etched using the photosensitive pattern 206 to simultaneously form the connection structure 105A and the open structure 105B. The asymmetric open-connection structure 105 can be configured by the connection structure 105A and the open structure 105B.

[0241] Therefore, the connection structure 105A can be formed to have an undercut structure, in which the side portions of the first layer 131 are recessed inward from the side portions of the second layer 132 or the side portions of the third layer 133. In addition, the open structure 105B can be formed to have an undercut structure, in which the side portions of the barrier layer 113 are recessed inward from the side portions of the first dam 111-1.

[0242] As shown in FIG. 9P, the photosensitive pattern 206 can be removed. Thereafter, whether there are defects in the driving circuits (e.g., at least one or more transistors) in each sub-pixel of the substrate 110 can be checked.

[0243] [Single Mask Process]

[0244] FIGS. 10A to 10H illustrate a single mask process for forming an asymmetric open-connection structure according to an embodiment. The drawings illustrate the process for forming the open structure 105B in the first dam 111-1 adjacent to the green sub-pixel SPg, but the same process can be applied to the process of forming the open structure in the second dam 111-2.

[0245] Since the processes for forming the anode 121g and the barrier layer 113 in the green sub-pixel SPg are the same as those in FIGS. 9A to 9F, the detailed description thereof will be omitted.

[0246] As shown in FIG. 10A, after the substrate 110 is cleaned, an inorganic film 111a (e.g., silicon nitride (SiNx)) can be deposited on the substrate 110.

[0247] As shown in FIG. 10B, after the substrate 110 is cleaned, titanium (Ti) can be deposited on the substrate 110 to form the third layer 133.

[0248] As shown in FIG. 10C, aluminum (Al) and titanium (Ti) can be sequentially deposited on the third layer 133 to form the first layer 131 and the second layer 132.

[0249] As shown in FIG. 10D, after the substrate 110 is cleaned, the photosensitive pattern 207 can be formed on the second layer 132.

[0250] As shown in FIG. 10E, after the substrate 110 is cleaned, the second layer 132, the first layer 131, and the third layer 133 can be sequentially dry-etched using the photosensitive pattern 207 to form the first protrusion 130-1.

[0251] For example, the second layer 132 can be etched using dry etching with CF4 / O2 gas. For example, the first layer 131 can be etched using dry etching with Cl and / or HCl gas. For example, the third layer 133 can be etched using dry etching with CF4 / O2 gas.

[0252] The sides of the second layer 132, the sides of the first layer 131, and the sides of the third layer 133 can be positioned on the same vertical line or diagonal line.

[0253] As shown in FIG. 10F, after the substrate 110 is cleaned, the inorganic film 111a can be dry-etched using the photosensitive pattern 207 to form the first dam 111-1. Thus, the first protrusion 130-1 and the first dam 111-1 can be formed using the same photosensitive pattern 207.

[0254] For example, the inorganic film 111a can be etched using dry etching with CF4 and He gas.

[0255] As shown in FIG. 10G, after the substrate 110 is cleaned, the first layer 131 and the barrier layer 113 can be wet-etched using the photosensitive pattern 207 to simultaneously form the connection structure 105A and the open structure 105B each having an undercut structure. The asymmetric open-connection structure 105 can be configured by the connection structure 105A and the open structure 105B.

[0256] As shown in FIG. 10H, the photosensitive pattern 207 can be removed. Thereafter, it can be checked whether there are defects in the driving circuits (such as at least one or more transistors) in each of the sub-pixels SPr, SPg, SPb of the substrate 110.

[0257] Meanwhile, as shown in FIGS. 11A to 11C, other modifications of the above single-mask process (FIGS. 10A to 10H) are also possible.

[0258] Figures 11A to 11C illustrate another modified process of the process of FIGS. 10E to 10G. The process illustrated in FIG. 11A may correspond to the process illustrated in FIG. 10E, the process illustrated in FIG. 11B may correspond to the process illustrated in FIG. 10F, and the process illustrated in FIG. 11C may correspond to the process illustrated in FIG. 10G.

[0259] As illustrated in FIG. 11A, the second layer 132 may be etched using the photosensitive pattern 207 and by dry etching using CF4 / O2 gas.

[0260] Different from FIG. 10E, the first layer 131 may be etched using wet etching. The aluminum (Al) forming the first layer 131 may be quickly etched away by wet etching. Thus, the connection structure 105A having an undercut structure recessed inward from the side of the second layer 132 may be formed.

[0261] For example, the third layer 133 may be etched using dry etching with CF4 / O2 gas.

[0262] Similar to FIG. 10F, as illustrated in FIG. 11B, the inorganic film 111a may be etched using the photosensitive pattern 207 and by dry etching using CF4 and He gas to form the first dam 111-1.

[0263] As illustrated in FIG. 11C, the barrier layer 113 may be etched using the photosensitive pattern 207 to form the open structure 105B.

[0264] When the barrier layer 113 is wet-etched, the first layer 131 may also be etched. Thus, the opening depth D2 of the connection structure 105A illustrated in FIG. 11C may be greater than the opening depth D1 of the connection structure 105A illustrated in FIG. 10G. Therefore, when a connection structure 105A with a large opening depth D2 is required, it may be preferable to perform the processes shown in FIGS. 11A and 11C.

[0265] Meanwhile, in an organic light-emitting display device having a side-by-side structure manufactured using a photolithography process, a red sub-pixel SPr, a green sub-pixel SPg, and a blue sub-pixel SPb can be sequentially formed. For example, after a red organic light-emitting layer 122r, a encapsulation layer 135, etc. are deposited on a substrate 110, the red organic light-emitting layer 122r and the encapsulation layer 135 can be etched to form only the red sub-pixel SPr. In this etching process, the photosensitive film or the encapsulation layer 135 may not be removed from the undercut structure (i.e., the U-shaped cavity) of the connection structure 105A of the first protrusion 130-1, so that a residual film can be generated.

[0266] Referring to FIGS. 12A to 12D, the generation of the residual film will be described.

[0267] FIGS. 12A to 12D illustrate the process of generating a residual film in the process of forming a red sub-pixel. The first protrusion 130-1 is illustrated in the drawings, but the same method can also be applied to the second protrusion 130-2.

[0268] As illustrated in FIG. 12A, the first protrusion 130-1 having the connection structure 105A can be formed on the first bank 111-1. The substrate 110 can be provided under the first bank 111-1.

[0269] As illustrated in FIG. 12B, the red organic light-emitting element 120r and the encapsulation layer 135 can be formed on the substrate 110. The cathode 123r of the red organic light-emitting element 120r can be electrically connected to the first layer 131 and the third layer 133 of the first protrusion 130-1. The first layer 131 and the third layer 133 can be used as auxiliary electrodes.

[0270] The encapsulation layer 135 can include a first first insulating layer 135-1, a first second insulating layer 135-2, and a first third insulating layer 135-3. For example, the first first insulating layer 135-1 can include an inorganic material such as silicon oxide (SiOx), the first second insulating layer 135-2 can include an inorganic material such as silicon nitride (SiNx), and the first third insulating layer 135-3 can include an inorganic material such as silicon nitride (SiOx).

[0271] The encapsulation layer 135 can be formed on the undercut structure (i.e., the U-shaped cavity portion) of the connection structure 105A.

[0272] As shown in FIG. 12C, the photosensitive pattern 208 can be formed on the substrate 110. The photosensitive pattern 208 can be formed on one side region of each of the red sub-pixel SPr and the first protrusion 130-1.

[0273] As shown in FIG. 12D, the encapsulation layer 135, the cathode 123r of the red organic light-emitting element 120r, and the red organic light-emitting layer 122r can be dry-etched using the photosensitive pattern 208, such that the encapsulation layer 135, the cathode 123r, and the red organic light-emitting layer 122r can be formed only on one side region of the red sub-pixel SPr and the first protrusion 130-1.

[0274] However, the encapsulation layer 135 or the photosensitive pattern 208 can remain as the residual films 230, 230a in the undercut structure of the first protrusion 130-1 adjacent to the green sub-pixel SPg. These residual films 230, 230a can remain between the side of the first layer 131 and the lower side of the second layer 132 of the first protrusion 130-1.

[0275] The photosensitive pattern 208 can include a transparent resin material having high purity, low water vapor transmission rate (WVTR), etc. Although the photosensitive pattern 208 removal process is performed, a part of the photosensitive pattern can remain in the undercut structure 151 without being removed, thereby forming a residual film to become the resin layer 136.

[0276] Since these residual films 230, 230a can be foreign substances that contribute to the formation of new moisture penetration passages, resulting in poor image quality (such as dark spots), they must be removed.

[0277] Specifically, the residual films 230, 230a become the penetration channels for developers, etching agents, and strippers in the wet process. In addition, during the drying process, they become the moisture penetration channels after the product is completed, which may cause dark spots in terms of long-term reliability, thereby having a fatal impact on the service life of the product. Since the finally formed sub-pixels (such as the blue sub-pixel SPb) undergo secondary patterning to form the red sub-pixel SPr and the green sub-pixel SPg, the dark spots caused by the residual films 230 and 230a may increase more, further increasing the defect rate.

[0278] FIG. 13A shows a residual film generated during the process of forming a red pixel.

[0279] As shown in FIG. 13A, before forming the green pixel SPg, when the connection structure 105A is formed on the first side of the first protrusion 130-1 adjacent to the green pixel SPg, the residual films 230, 230a can be formed on the undercut structure of the connection structure 105A.

[0280] As shown in FIG. 13A, the encapsulation layer 135 and the red organic light-emitting element 120r formed on the substrate 110 can be dry-etched so that the encapsulation layer 135 and the cathode 123r and the red organic light-emitting layer 122r of the red organic light-emitting element 120r can be formed on one side area of the red pixel SPr and the first protrusion 130-1.

[0281] Thereafter, an ashing process can be performed so that the photosensitive pattern (208 in FIG. 12D) can be peeled off and can remain in the undercut structure on both sides of the first protrusion 130-1. The ashing process can be performed as an anisotropic process.

[0282] Moisture penetration can be blocked through the photosensitive pattern 208 remaining in the undercut structure on both sides of the first protrusion 130-1.

[0283] The encapsulation layer 135 and the photosensitive pattern 208 can remain in the undercut structure of the first protrusion 130-1. The encapsulation layer 135 and the photosensitive pattern 208 remaining in the undercut structure of the first protrusion 130-1 adjacent to the red pixel SPr can have the function of preventing moisture penetration. However, the encapsulation layer 135 and the photosensitive pattern 208 (which remain in the undercut structure of the first protrusion 130-1 adjacent to the green pixel SPg or remain in the undercut structure of the second protrusion 130-2 adjacent to the blue pixel SPb) may cause dark spots in the green pixel SPg or the blue pixel SPb.

[0284] FIG. 13B shows a process that does not generate a residual film.

[0285] As shown in FIG. 13B, the photosensitive pattern (208 in FIG. 13A) can be removed using wet etching so that the photosensitive pattern 208 does not remain as a residual film 230 in the undercut structure of the first protrusion 130-1 adjacent to the green pixel SPg.

[0286] However, the encapsulation layer 135 can still remain as the residual film 230a in the undercut structure adjacent to the first protrusion 130-1 of the green sub-pixel SPg. In addition, the red organic light-emitting layer 122r on the first protrusion 130-1 can be etched during the peeling process, which may become a potential cause of poor image quality due to another foreign object or a new channel for moisture penetration in the subsequent process.

[0287] To solve this problem, just-in-time (JIT) process technology can be used in this embodiment. The JIT process technology can be a process technology that can immediately form the connection structure 105A or the open structure 105B when the formation of the connection structure 105A or the open structure 105B is needed. That is, by immediately forming the connection structure 105A or the open structure 105B when needed without pre-forming the connection structure 105A or the open structure 105B, defects such as the above-mentioned dark spots can be prevented. Here, the connection structure 105A or the open structure 105B can have an undercut structure or a U-shaped cavity. The JIT process technology of this embodiment can be applied to immediately form the connection structure 105A and / or the open structure 105B when necessary, and a series of overall processes of forming the corresponding sub-pixels after the connection structure 105A and / or the open structure 105B are formed.

[0288] FIGS. 14A to 14D illustrate the process of forming a red sub-pixel such that no residual film is generated on the second side portion of the first protrusion adjacent to the green sub-pixel. The drawings illustrate the process of forming the red sub-pixel SPr, but the same can also be applied to the process of forming the green sub-pixel SPg or the blue sub-pixel SPb. In addition, the drawings illustrate that the connection structure 105A and the open structure 105B are formed using the JIT process technology, but the open structure 105B can be omitted.

[0289] As illustrated in FIG. 14A, the anodes 121r, 121g can be respectively formed on the red sub-pixel SPr and the green sub-pixel SPg of the substrate 110.

[0290] The first dam 111-1 and the first protrusion 130-1 can be formed on the substrate 110 between the red sub-pixel SPr and the green sub-pixel SPg. The open structure 105B can be formed in the edge area on the lower side of the first dam 111-1.

[0291] The first connection structure 171 can be formed on the first side of the first protrusion 130-1 (i.e., the side adjacent to the red sub-pixel SPr), but the second connection structure may not be formed on the second side of the first protrusion 130-1 (i.e., the side adjacent to the green sub-pixel SPg). This is to prevent the residual film from being generated via the second connection structure when the encapsulation layer 135 or the photosensitive pattern is removed. When the green sub-pixel SPg is formed, the second connection structure on the second side of the first protrusion 130-1 may be formed later.

[0292] As shown in FIG. 14B, the red organic light-emitting layer 122r, the cathode 123r, the encapsulation layer 135, etc. can be formed on the substrate 110.

[0293] As shown in FIG. 14C, the photosensitive film can be formed and patterned on the substrate 110 such that the photosensitive pattern can be formed on the red sub-pixel SPr and a side region of the first protrusion 130-1.

[0294] The encapsulation layer 135, the cathode 123r, and the red organic light-emitting layer 122r on the green sub-pixel SPg and the remaining side region of the first protrusion 130-1 can be removed using the photosensitive pattern and via an etching process. Thereafter, the photosensitive pattern can be removed. Thus, the red organic light-emitting device 120r can be formed in the red sub-pixel SPr.

[0295] As shown in FIG. 14C, the second connection structure 172 is not yet formed on the second side of the first protrusion 130-1. In addition, the second side of the first protrusion 130-1 may have a flat or straight surface. Thus, as shown in FIG. 14B, when the green sub-pixel SPg is formed, the encapsulation layer 135 or the photosensitive film formed on the second side of the first protrusion 130-1 can be removed without forming a residual film.

[0296] As shown in FIG. 14D, after the red sub-pixel SPr is formed, the green sub-pixel SPg can be formed. To form the green sub-pixel SPg, the second connection structure 172 formed on the second side of the first protrusion 130-1 is required. Thus, when the formation of the green sub-pixel SPg is needed, the second connection structure 172 and the open structure can be immediately formed on the second side of the first protrusion 130-1 using the JIT process technology.

[0297] Thereafter, the green organic light-emitting layer 122 g , the cathode 123 g , the encapsulation layer 135 , etc. can be formed on the substrate 110 , and then the encapsulation layer 135 , the cathode 123 g , and the green organic light-emitting layer 122 g on the remaining region of the first protrusion 130 - 1 (excluding the chlorophyll SPg and the remaining side portion) can be removed using a photosensitive pattern. The photosensitive pattern can be removed. Therefore, the green organic luminescent piece 120g can be formed in the chlorophyll pixel SPg.

[0298] In summary, the JIT process technology may be a process technology for connected structures 105A and / or open structures 105B that form this embodiment at a "necessary time" at a "necessary location".

[0299] As shown in Figure 5D , when the connection structure 105A is preformed on the dilateral portion of the first protrusion 130-1 as well as the dilateral portion of the second protrusion 130-2, as shown in Figures 5F to 5G , in forming a blue subpaint During the process of blue organic light-emitting device 120b in prime SPb, residual films (230, 230a in Fig. 12D) can be generated on top of the connection structure 105A and the like on the dilateral portion of the first protrusion 130-1. In addition, as shown in Figures 5I and 5J , during the process of forming the green organic light-emitting member 120 g in the chlorophyll SPg, the residual films 230 , 230a can be generated on the connection structure 105A on one side of the first protrusion 130 - 1 . Due to the generation of dark spots caused by these residual films 230 , 230a , the yield will be reduced and additional dark spots will be generated during product use, which may reduce the reliability of the product.

[0300] Although Figures 5A to 5O illustrate that blue organic luminescent members 120b, green organic luminescent members 120g, and red organic luminescent members 120r are formed in that order, the order can be changed.

[0301] However, according to an embodiment, when the corresponding subpixels SPr, SPg, SPb are formed, the connection structure 105A may be formed on the side adjacent to the protrusions 130-1, 130-2 of the corresponding subpixels SPr, SPg, SPb using JIT process technology. In this case, since the linker structure 105A is not formed on the lateral portion of the corresponding protrusion when the forming another subpixel is formed, the residual film may not be generated on the lateral portion of the corresponding protrusion. Therefore, the appearance of dark spots due to residual films 230 , 230a can be avoided in advance, enabling the yield to be improved and the product reliability to be improved.

[0302] Specifically, when the formation of the red sub-pixel SPr is required, the first connection structure 171 can be formed on the first side portion of the first protrusion 130-1 using the JIT process technology, and then the red sub-pixel SPr can be formed.

[0303] After the first connection structure 171 is formed and the red organic light-emitting element 120r is formed on the red sub-pixel SPr, the green sub-pixel SPg can now be formed. At this time, the second connection structure 172 can be formed on the second side portion of the first protrusion 130-1 using the JIT process technology, and then the green sub-pixel SPg can be formed.

[0304] After the second connection structure 172 is formed and the green organic light-emitting element 120g is formed on the green sub-pixel SPg, the blue sub-pixel SPb can now be formed. At this time, the third connection structure 173 can be formed on the second side portion (i.e., the side adjacent to the blue sub-pixel SPb) of the second protrusion 130-2 using the JIT process technology. After the third connection structure 173 is formed, the blue organic light-emitting element 120b can be formed on the blue sub-pixel SPb.

[0305] Referring to FIGS. 15A to 15K, FIGS. 16A to 16J, and FIGS. 17A to 17K, the entire process of forming the red sub-pixel SPr, the green sub-pixel SPg, and the blue sub-pixel SPb using the JIT process technology is described. Although the open structure 105B is not shown in FIGS. 15A to 15K, FIGS. 16A to 16J, and FIGS. 17A to 17K, when the connection structure 105A is formed using the first JIT process technology, the open structure 105B can also be formed.

[0306] In the following description, the shapes, structures, functions, processes, etc. that are repeated with the above content are omitted.

[0307] FIGS. 15A to 15K illustrate the detailed process of forming the red sub-pixel using the first JIT process technology.

[0308] As shown in FIG. 15A, the anodes 121r, 121g, 121b can be respectively formed on the red sub-pixel SPr, the green sub-pixel SPg, and the blue sub-pixel SPb of the substrate 110.

[0309] The first dam 111-1 and the first protrusion 130-1 can be formed on the substrate 110 between the red sub-pixel SPr and the green sub-pixel SPg. The second dam 111-2 and the second protrusion 130-2 can be formed on the substrate 110 between the green sub-pixel SPg and the blue sub-pixel SPb.

[0310] As shown in FIG. 15B, the photosensitive pattern 211 can be formed on the green sub-pixel SPg, the remaining side regions of the first protrusion 130-1, the blue sub-pixel SPb, and the second protrusion 130-2.

[0311] As shown in FIG. 15C, the first protrusion 130-1 can be etched using the photosensitive pattern 211 such that the first connection structure 171 can be formed on the first side portion (i.e., the side portion adjacent to the red sub-pixel SPr) of the first protrusion 130-1. The first connection structure 171 can have an undercut structure, wherein the side portions of the first layer 131 are recessed inwardly from the side portions of the second layer 132 or the third layer 133.

[0312] As shown in FIG. 15D, the photosensitive pattern 211 can be removed.

[0313] As shown in FIG. 15E, the red organic light-emitting layer 122r can be deposited on the substrate 110.

[0314] As shown in FIG. 15F, the cathode 123r can be deposited on the red organic light-emitting layer 122r. The cathode 123r can be electrically connected to the auxiliary electrode (e.g., at least one of the first layer 131, the second layer 132, or the third layer 133) via the side portion of the first protrusion 130-1.

[0315] As shown in FIG. 15G, the encapsulation layer 135 can be deposited on the cathode 123r.

[0316] As shown in FIG. 15H, the photosensitive pattern 212 can be formed on the red sub-pixel SPr and one side region of the first protrusion 130-1.

[0317] As shown in FIG. 15I, the encapsulation layer 135 can be dry-etched using the photosensitive pattern 212 such that the encapsulation layer 135 on the green sub-pixel SPg, the remaining side regions of the first protrusion 130-1, the blue sub-pixel SPb, and the second protrusion 130-2 can be removed.

[0318] As shown in FIG. 15J, the cathode 123r and the red organic light-emitting layer 122r can be dry-etched using the photosensitive pattern 212, so that the cathode 123r and the red organic light-emitting layer 122r on the green sub-pixel SPg, the remaining side regions of the first protrusion 130-1, the blue sub-pixel SPb, and the second protrusion 130-2 can be removed.

[0319] As shown in FIG. 15K, the photosensitive pattern 212 can be removed. Accordingly, the red organic light-emitting element 120r and the encapsulation layer 135 can be formed on the red sub-pixel SPr.

[0320] Therefore, when the red organic light-emitting element 120r is formed, the connection structure 105A may not be formed on the second side portion of the first protrusion 130-1 (i.e., the side portion adjacent to the green sub-pixel SPg). The second side portion of the first protrusion 130-1 may have a flat surface or a straight surface. Accordingly, the organic light-emitting layer, the cathodes 123r, 123g, 123b, and the encapsulation layer 135 formed on the second side portion of the first protrusion 130-1 can be easily removed without remaining as a residual film.

[0321] Thereafter, an inspection as to whether the red sub-pixel SPr is completed is performed, and defects in the red sub-pixel SPr can be detected.

[0322] FIGS. 16A to 16J illustrate a detailed process of forming a green sub-pixel using the first JIT process technology.

[0323] As shown in FIG. 16A, the photosensitive pattern 213 can be formed on the red sub-pixel SPr, one side portion of the first protrusion 130-1, the blue sub-pixel SPb, and the remaining side portions of the second protrusion 130-2.

[0324] As shown in FIG. 16B, the first protrusion 130-1 can be etched using the photosensitive pattern 213, so that the second connection structure 172 can be formed on the second side portion of the first protrusion 130-1 (i.e., the side portion adjacent to the green sub-pixel SPg). The second connection structure 172 may have an undercut structure, in which the side portion of the first layer 131 is recessed inward from the side portion of the second layer 132 or the third layer 133.

[0325] As shown in FIG. 16C, the photosensitive pattern 213 can be removed.

[0326] As shown in FIG. 16D, the green organic light-emitting layer 122g can be deposited on the substrate 110.

[0327] As shown in FIG. 16E, the cathode 123g can be deposited on the green organic light-emitting layer 122g. The cathode 123g can be electrically connected to the auxiliary electrode (for example, at least one of the first layer 131, the second layer 132, or the third layer 133) via the side of the first protrusion 130-1.

[0328] As shown in FIG. 16F, the encapsulation layer 135 can be deposited on the cathode 123g.

[0329] As shown in FIG. 16G, the photosensitive pattern 214 can be formed on the green sub-pixel SPg and the remaining side regions of the first protrusion 130-1.

[0330] As shown in FIG. 16H, the encapsulation layer 135 can be dry-etched using the photosensitive pattern 214, so that the encapsulation layer 135 on the red sub-pixel SPr, one side region of the first protrusion 130-1, the blue sub-pixel SPb, and the second protrusion 130-2 can be removed.

[0331] As shown in FIG. 16I, the cathode 123g and the green organic light-emitting layer 122g can be dry-etched using the photosensitive pattern 214, so that the cathode 123r and the green organic light-emitting layer 122g on the red sub-pixel SPr, one side region of the first protrusion 130-1, the blue sub-pixel SPb, and the second protrusion 130-2 can be removed.

[0332] As shown in FIG. 16J, the photosensitive pattern 214 can be removed. Therefore, the green organic light-emitting element 120g and the encapsulation layer 135 can be formed on the green sub-pixel SPg.

[0333] Therefore, when the green organic light-emitting element 120g is formed, the connection structure 105A may not be formed on the second side of the second protrusion 130-2 (i.e., the side adjacent to the blue sub-pixel SPb). The second side of the second protrusion 130-2 may have a flat surface or a straight surface. Therefore, the organic light-emitting layer, the cathode 123g, and the encapsulation layer 135 formed on the second side of the second protrusion 130-2 can be easily removed without remaining as a residual film.

[0334] In the figure, the area of the red organic light-emitting layer 122r on the upper side of the first protrusion 130-1 is shown to be larger than the area of the green organic light-emitting layer 122g, but they may have the same area.

[0335] Thereafter, an inspection as to whether the green sub-pixel SPg is completed is performed, and defects in the green sub-pixel SPg can be detected.

[0336] Figures 17A to 17K illustrate a detailed process of forming a blue sub-pixel using the first JIT process technology.

[0337] As illustrated in Figure 17A, a substrate 110 on which a red sub-pixel SPr and a green sub-pixel SPg are formed can be prepared.

[0338] As illustrated in Figure 17B, a photosensitive pattern 215 can be formed on a side portion of the red sub-pixel SPr, the first protrusion 130-1, the green sub-pixel SPg, and the second protrusion 130-2.

[0339] As illustrated in Figure 17C, the second protrusion 130-2 can be etched using the photosensitive pattern 215 such that a third connection structure 173 can be formed on a second side portion of the second protrusion 130-2 (i.e., the side portion adjacent to the blue sub-pixel SPb). The third connection structure 173 can have an undercut structure, in which side portions of the first layer 131 are recessed inward from side portions of the second layer 132 or the third layer 133.

[0340] As illustrated in Figure 17D, the photosensitive pattern 215 can be removed.

[0341] As illustrated in Figure 17E, a blue organic light-emitting layer 122b can be deposited on the substrate 110.

[0342] As illustrated in Figure 17F, a cathode 123b can be deposited on the blue organic light-emitting layer 122b. The cathode 123b can be electrically connected to an auxiliary electrode (e.g., at least one of the first layer 131, the second layer 132, or the third layer 133) via a side portion of the second protrusion 130-2.

[0343] As illustrated in Figure 17G, a packaging layer 135 can be deposited on the cathode 123b.

[0344] As illustrated in Figure 17H, a photosensitive pattern 216 can be formed on the blue sub-pixel SPb and the second protrusion 130-2.

[0345] As shown in FIG. 17I, the encapsulation layer 135 can be dry-etched using the photosensitive pattern 216 such that the encapsulation layer 135 on the red sub-pixel SPr, the first protrusion 130-1, the green sub-pixel SPg, and the second protrusion 130-2 can be removed.

[0346] As shown in FIG. 17J, the cathode 123b and the blue organic light-emitting layer 122b can be dry-etched using the photosensitive pattern 216 such that the cathode 123b and the blue organic light-emitting layer 122b on one side region of the blue sub-pixel SPb, the cathode 123b and the blue organic light-emitting layer 122b on the first protrusion 130-1, the green sub-pixel SPg, and the second protrusion 130-2 can be removed.

[0347] As shown in FIG. 17K, the photosensitive pattern 216 can be removed. Accordingly, the blue organic light-emitting device 120b and the encapsulation layer 135 can be formed in the blue sub-pixel SPb.

[0348] In the drawings, the area of the green organic light-emitting layer 122g on the upper side of the first protrusion 130-1 is shown to be larger than the area of the blue organic light-emitting layer 122b, but they can have the same area.

[0349] Thereafter, an inspection as to whether the blue sub-pixel SPb is completed is performed, and defects in the blue sub-pixel SPb can be detected.

[0350] As shown in FIGS. 15A to 15K, 16A to 16J, and 17A to 17K, in the substrate structure using the first JIT process, the first bank 111-1 and the first protrusion 130-1 are formed, and before the red organic light-emitting device 120r is formed, the first connection structure 171 can be formed on the side adjacent to the red sub-pixel SPr in the first protrusion 130-1.

[0351] Conversely, as shown in FIG. 18, in the substrate structure using the second JIT process technology, before the red organic light-emitting device 120r is formed, the first bank 111-1 and the first connection structure 171 can be formed. In addition, as shown in FIG. 23, in the substrate structure using the third JIT process technology, the first bank 111-1 is formed, and before the red organic light-emitting device 120r is formed, the first connection structure 171 can be formed.

[0352] The open structure 105B formed using the blocking layer 113 is shown in FIGS. 18 and 23, but the open structure 105B can be omitted.

[0353] Thereafter, the manufacturing using the second JIT process technology and the third JIT process technology will be described in more detail.

[0354] FIG. 18 illustrates a substrate structure before immediately performing the second JIT process technology. The red sub-pixel SPr is illustrated in the drawing, but the same method can be applied to the green sub-pixel SPg and the blue sub-pixel SPb.

[0355] As illustrated in FIG. 18, the inorganic film 111a, the third layer 133, the first layer 131, and the second layer 132 can be formed on the substrate 110.

[0356] Thereafter, when the red sub-pixel SPr is formed, the third layer 133, the first layer 131, and the second layer 132 can be etched using the second JIT process technology to form the first connection structure 171, and the inorganic film 111a and the blocking layer 113 can be etched to form the first dam 111-1 and the open structure 105B. At this time, the inorganic film 111a can be etched until the anodes 121r, 121g, 121b are exposed in the red sub-pixel SPr.

[0357] Thereafter, the red organic light-emitting layer 122r, the cathodes 123r, 123g, 123b, the encapsulation layer 135, etc. can be deposited and patterned so that the red organic light-emitting device 120r and the encapsulation layer 135 can be formed in the red sub-pixel SPr.

[0358] FIG. 19 illustrates a first process of forming a connection structure using the second JIT process technology before forming the green organic light-emitting device. The green sub-pixel SPg is illustrated in the drawing, but the same method can be applied to the red sub-pixel SPr and the blue sub-pixel SPb.

[0359] In step R10, the red organic light-emitting device 120r can be formed in the red sub-pixel SPr of the substrate 110 (see FIG. 18). At this time, the anodes 121r, 121g, 121b, the inorganic film 111a, the third layer 133, the first layer 131, and the second layer 132 can be formed on the substrate 110 in the green sub-pixel SPg. The etching rate of the first layer 131 can be greater than the etching rate of the second layer 132 or the third layer 133.

[0360] In step G01, the photosensitive pattern 221 can be formed on the remaining area (excluding the green sub-pixel SPg) of the substrate 110.

[0361] In step G02a, the second layer 132 can be dry-etched using the photosensitive pattern 221, so that the second layer 132 in the green pixel SPg can be removed.

[0362] In step G02b, the first layer 131 and the third layer 133 can be batch-wet-etched using the photosensitive pattern 221, so that the first layer 131 and the third layer 133 in the green pixel SPg can be removed. In this case, the first layer 131 can be etched faster than the third layer 133, so that the first protrusion 130-1 having the second connection structure 172 can be formed, wherein one side portion of the first layer 131 is recessed inward from one side portion of the second layer 132 or the third layer 133. In the figure, the side portion of the third layer 133 has a shape that is recessed more inward than the side portion of the second layer 132, but is not limited thereto.

[0363] In step G02c, the inorganic film 111a can be dry-etched in a self-aligned manner using the photosensitive pattern 221, so that the first dam 111-1 can be formed. Through this self-aligned dry etching method, the end portion of the first dam 111-1 can be the same as the end portion of the photosensitive pattern 221 or the second layer 132 in the vertical direction.

[0364] In step G03, the photosensitive pattern 221 can be removed.

[0365] Thereafter, a green organic light-emitting element can be formed in the green pixel SPg.

[0366] FIG. 20 shows a second process of forming a connection structure using the second JIT process technology before forming a green organic light-emitting element. The green pixel SPg is shown in the figure, but the same method can be applied to the red pixel SPr and the blue pixel SPb.

[0367] Step R10, step G01, and step G02a are the same as step R10, step G01, and step G02a shown in FIG. 19, so their descriptions are omitted.

[0368] In step G02b, the first layer 131, the third layer 133, and the inorganic film 111a can be dry-etched in a self-aligned manner using the photosensitive pattern 221, so that the first protrusion 130-1 and the first dam 111-1 can be formed. Since dry etching is performed in a self-aligned manner, the side portion of the first layer 131, the side portion of the second layer 132, and / or the side portion of the third layer 132 can be positioned on the same vertical line or diagonal line.

[0369] In step G02c, the first layer 131 and the third layer 133 can be batch wet-etched using the photosensitive pattern 221. Therefore, the first layer 131 can be etched faster than the third layer 133, so that the first protrusion 130-1 of the second connection structure 172 that is recessed inward from the side of the first layer 131 or the side of the third layer 133 can be formed.

[0370] In step G03, the photosensitive pattern can be removed.

[0371] Thereafter, a green organic light-emitting element can be formed in the green sub-pixel SPg.

[0372] Referring to FIGS. 21A to 21K and FIGS. 22A to 22M, the entire process of forming the red sub-pixel SPr, the green sub-pixel SPg, and the blue sub-pixel SPb using the second JIT process technology will be described. Although the open structure is not shown in FIGS. 21A to 21K and FIGS. 22A to 22M, the open structure can also be provided.

[0373] In the following description, shapes, structures, functions, processes, etc. that overlap with the above content are omitted.

[0374] FIGS. 21A to 21K illustrate the detailed process of forming a red sub-pixel using the second JIT process technology.

[0375] As shown in FIG. 21A, the inorganic film 111a, the third layer 133, the first layer 131, and the second layer 132 can be formed on the substrate 110 including the red sub-pixel SPr, the green sub-pixel SPg, and the blue sub-pixel SPb.

[0376] As shown in FIG. 21B, the photosensitive pattern 231 can be formed on the remaining area of the substrate 110 (excluding the red sub-pixel SPr). The photosensitive pattern 231 can be formed on the green sub-pixel SPg and the blue sub-pixel SPb of the substrate 110. The photosensitive pattern 231 can also be formed on the area between the red sub-pixel SPr and the green sub-pixel SPg and the area between the green sub-pixel SPg and the blue sub-pixel SPb in the substrate 110.

[0377] As shown in FIG. 21C, the second layer 132 can be dry-etched using the photosensitive pattern 231.

[0378] As shown in FIG. 21D, the first layer 131 and the third layer 133 can be batch wet-etched using the photosensitive pattern 231, so as to form the first connection structure 171 in the region contacting the red sub-pixel SPr. The first connection structure 171 can have an undercut structure or a U-shaped cavity.

[0379] As shown in FIG. 21E, the inorganic film 111a can be dry-etched using the photosensitive pattern 231 to expose the anode 121r to the red sub-pixel SPr.

[0380] As shown in FIG. 21F, the photosensitive pattern 231 can be removed.

[0381] As shown in FIG. 21G, the red organic light-emitting layer 122r and the cathode 123r can be deposited on the substrate 110.

[0382] As shown in FIG. 21H, the encapsulation layer 135 can be deposited on the cathode 123r. The encapsulation layer 135 can include but is not limited to a first insulating layer including an inorganic material such as SiO2 and a second insulating layer including an inorganic material such as SiNx.

[0383] As shown in FIG. 21I, the photosensitive pattern 232 can be formed on the red sub-pixel SPr of the substrate 110. The photosensitive pattern 232 can also be formed on the portion between the red sub-pixel SPr and the green sub-pixel SPg of the substrate 110 and on the portion of the substrate 110 between the green sub-pixel SPg and the blue sub-pixel SPb.

[0384] As shown in FIG. 21J, the encapsulation layer 135, the cathode 123r, and the red organic light-emitting layer 122r can be dry-etched using the photosensitive pattern 232, so that the encapsulation layer 135, the cathode 123r, and the red organic light-emitting layer 122r in the green sub-pixel SPg and the blue sub-pixel SPb can be removed. Therefore, the opening 261 can be formed in the green sub-pixel SPg and the blue sub-pixel SPb where the second layer 132 is exposed. The encapsulation layer 135, the cathode 123r, and the red organic light-emitting layer 122r on the remaining portion between the red sub-pixel SPr and the green sub-pixel SPg of the substrate 110 and on the remaining portion between the green sub-pixel SPg and the blue sub-pixel SPb of the substrate 110 can be removed.

[0385] As shown in FIG. 21K, the photosensitive pattern 232 can be removed, so that the red sub-pixel SPr including the red organic light-emitting element 120r can be formed.

[0386] Thereafter, the green sub-pixel SPg and the blue sub-pixel SPb can be formed using the second JIT process technology as illustrated in FIGS. 22A to 22M.

[0387] FIGS. 22A to 22M illustrate the detailed process of using the second JIT process technology to form the green sub-pixel and the blue sub-pixel.

[0388] As illustrated in FIG. 22A, the photosensitive pattern 233 can be formed on the remaining area (excluding the green sub-pixel SPg) of the substrate 110. The photosensitive pattern 233 can be formed on the green sub-pixel SPg and the blue sub-pixel SPb of the substrate 110. The photosensitive pattern 233 can also be formed on the area between the red sub-pixel SPr and the green sub-pixel SPg and the area between the green sub-pixel SPg and the blue sub-pixel SPb in the substrate 110.

[0389] As illustrated in FIG. 22B, the second layer 132 can be dry-etched using the photosensitive pattern 233.

[0390] As illustrated in FIG. 22C, the first layer 131 and the third layer 133 can be batch wet-etched using the photosensitive pattern 233. Therefore, the second connection structure 172 can be formed in the side portion of the first layer 131, where the side portion of the first layer 131 is recessed inward from the side portion of the second layer 132. The first protrusion 130-1 having the first connection structure 171 and the second connection structure 172 can be formed between the red sub-pixel SPr and the green sub-pixel SPg.

[0391] As illustrated in FIG. 22D, the inorganic film 111a can be dry-etched using the photosensitive pattern 233. Therefore, the first dam 111-1 can be formed between the red sub-pixel SPr and the green sub-pixel SPg. In this case, the first protrusion 130-1 can be formed on the upper side of the first dam 111-1.

[0392] Therefore, the opening 262 can be formed in the green sub-pixel SPg where the anode 121g is exposed.

[0393] At the same time, since the third layer 133 for the dry etching of the inorganic film 111a is not etched through CF4 and He gas, the area where the inorganic film 111a is removed can be the same as the area of the removed third layer 133. That is to say, the side portion of the third layer 133 and the side portion of the first dam 111-1 can be located on the same vertical line or diagonal line. Therefore, the width of the first dam 111-1 can become narrower, and conversely, the hole area of the green sub-pixel SPg can become larger.

[0394] As shown in FIG. 22E, the photosensitive pattern 233 can be removed. In this case, the photosensitive pattern 233 formed on the first connection structure 171 may not be removed and may remain as the residual film 241.

[0395] As shown in FIG. 22F, the green sub-pixel SPg including the green organic light-emitting element 120g can be formed. Since the process of forming the green organic light-emitting element 120g is the same as the process of forming the red organic light-emitting element 120r (FIGS. 22G to 22K), the description of its details will be omitted.

[0396] Meanwhile, after the green sub-pixel SPg is formed, the photosensitive pattern 234 can be formed on the remaining area of the substrate 110 (excluding the blue sub-pixel SPb). The photosensitive pattern 234 can be formed on the red sub-pixel SPr and the green sub-pixel SPg of the substrate 110. The photosensitive pattern 234 can also be formed on the area between the red sub-pixel SPr and the green sub-pixel SPg on the substrate 110 and the area between the green sub-pixel SPg and the blue sub-pixel SPb.

[0397] As shown in FIG. 22G, the second layer 132 can be dry-etched using the photosensitive pattern 234.

[0398] As shown in FIG. 22H, the first layer 131 and the third layer 133 can be batch wet-etched using the photosensitive pattern 234. Therefore, the third connection structure 173 can be formed in the side portion of the first layer 131, where the side portion of the first layer 131 is recessed inward from the side portion of the second layer 132. The second protrusion 130-2 having the second connection structure 172 and the third connection structure 173 can be formed between the green sub-pixel SPg and the blue sub-pixel SPb.

[0399] As shown in FIG. 22I, the inorganic film 111a can be dry-etched using the photosensitive pattern 234. Therefore, the second bank 111-2 can be formed between the green sub-pixel SPg and the blue sub-pixel SPb. In this case, the second protrusion 130-2 can be formed on the upper side of the second bank 111-2.

[0400] Therefore, the opening 263 can be formed in the blue sub-pixel SPb where the anode 121b is exposed.

[0401] Meanwhile, since the third layer 133 for dry etching the inorganic film 111a is etched without using CF4 and He gas, the area of the inorganic film 111a removed can be the same as the area of the removed third layer 133. That is to say, the side portions of the third layer 133 and the second bank 111-2 can be positioned on the same vertical line or diagonal line. Therefore, the width of the second bank 111-2 can become narrower, and conversely, the hole area of the blue sub-pixel SPb can become larger.

[0402] As shown in FIG. 22J, the photosensitive pattern 234 can be removed. In this case, the photosensitive pattern 234 formed on the second connection structure 172 may not be removed and may remain as the residual film 242.

[0403] As shown in FIG. 22K, the blue sub-pixel SPb including the blue organic light-emitting element 120b can be formed. The process of forming the blue organic light-emitting element 120b is the same as the process of forming the red organic light-emitting element 120r (FIGS. 22G to 22K), and therefore, the detailed description thereof will be omitted.

[0404] When the photosensitive pattern (not shown) is removed after the blue organic light-emitting element 120b formed on the blue sub-pixel SPb, the photosensitive pattern formed on the third connection structure 173 may not be removed and may remain as the residual film 243.

[0405] As shown in FIGS. 22L and 22M, a plurality of encapsulation layers 143, 144 can be formed on the substrate 110. The encapsulation layers 143, 144 can include organic or inorganic materials having excellent insulating properties and moisture permeation barrier performance.

[0406] The encapsulation layer 143 can be formed by an inkjet process, and the encapsulation layer 144 can be formed by a PECVD process, but is not limited thereto.

[0407] The organic light-emitting display device can be manufactured through a series of processes as described above.

[0408] In the above, it is described that the red sub-pixel SPr, the green sub-pixel SPg, and the blue sub-pixel SPb are formed in sequence, but this order can be changed.

[0409] FIG. 23 shows the substrate structure immediately before performing the third JIT process technology. The red sub-pixel SPr is shown in the figure, but the same can be applied to the green sub-pixel SPg and the blue sub-pixel SPb.

[0410] As shown in FIG. 23, the first dam 111-1 can be formed on the substrate 110. The third layer 133, the first layer 131, and the second layer 132 can be formed on the first dam 111-1.

[0411] Thereafter, when the red sub-pixel SPr is formed, the third layer 133, the first layer 131, and the second layer 132 can be etched using the third JIT process technology to form the first connection structure 171. By etching the third layer 133, the first layer 131, and the second layer 132, the anodes 121r, 121g, 121b in the red sub-pixel SPr can be exposed.

[0412] The blocking layer 113 can be etched using the third JIT process technology to form the open structure 105B.

[0413] Thereafter, the red organic light-emitting layer 122r, the cathode 123r, the encapsulation layer 135, etc. can be deposited and patterned such that the red organic light-emitting device 120r and the encapsulation layer 135 can be formed in the red sub-pixel SPr.

[0414] FIG. 24 shows the process of forming the connection structure using the third JIT process technology before forming the green organic light-emitting device. The green sub-pixel SPg is shown in the figure, but the same can be applied to the red sub-pixel SPr and the blue sub-pixel SPb.

[0415] In step R10, the red organic light-emitting device 120r can be formed in the red sub-pixel SPr of the substrate 110 (see FIG. 23). At this time, the anodes 121r, 121g, 121b, the third layer 133, the first layer 131, and the second layer 132 can be formed on the substrate 110 in the green sub-pixel SPg. The etching rate of the first layer 131 can be greater than the etching rates of the second layer 132 or the third layer 133. In addition, the first dam 111-1 can be formed between the red sub-pixel SPr and the green sub-pixel SPg.

[0416] In step G01, the photosensitive pattern 241 can be formed on the remaining area (excluding the green sub-pixel SPg) of the substrate 110.

[0417] In step G02a, the second layer 132 can be dry-etched using the photosensitive pattern 241 such that the second layer 132 in the green sub-pixel SPg can be removed.

[0418] In step G02b, the first layer 131 and the third layer 133 can be batch-wet-etched using the photosensitive pattern 241, so that the first layer 131 and the third layer 133 in the green pixel SPg can be removed. In this case, the first layer 131 can be etched faster than the third layer 133, so that the first protrusion 130-1 with the second connection structure 172 can be formed, where one side portion of the first layer 131 is recessed inward from one side portion of the second layer 132 or the third layer 133. In the figure, the side portion of the third layer 133 has a shape that is more recessed inward than the side portion of the second layer 132, but is not limited thereto.

[0419] In step G03, the photosensitive pattern 241 can be removed.

[0420] Thereafter, a green organic light-emitting element can be formed in the green pixel SPg.

[0421] FIG. 25 illustrates an organic light-emitting display device manufactured using the third JIT process technology.

[0422] As illustrated in FIG. 25, the width W2 of the hole region in the organic light-emitting display device manufactured using the third JIT process technology can be smaller than the width W1 of the hole region in the organic light-emitting display device manufactured using the second JIT process technology (FIG. 22M).

[0423] As described above, when the second JIT process technology is used, the width W1 of the hole region of the green pixel SPg or the blue pixel SPb can increase as the width of the first dam 111-1 or the second dam 111-2 formed by the removal of the inorganic film 111a decreases.

[0424] It can be seen that the second JIT process technology has more advantages than the third JIT process technology in terms of expanding the width of the open region.

[0425] 100: Organic light-emitting display device 101: First power terminal 102: Second power terminal 103: Contact pad 105: Asymmetric open-connection structure 105A: Connection structure 105B: Open structure 106: Driving circuit 110: Substrate 111a: Inorganic film 111-1: (First) Dam 111-2: (Second) Dam 111-3: Transverse Dam 113: Barrier Layer 120b: (Blue) Organic Light-Emitting Element 120g: (Green) Organic Light-Emitting Element 120r: (Red) Organic Light-Emitting Element 121b, 121g, 121r: Anode 122b: (Blue) Organic Light-Emitting Layer 122g: (Green) Organic Light-Emitting Layer 122r: (Red) Organic Light-Emitting Layer 123b, 123g, 123r: Cathode 123-1: (First) Conductive Layer 123-2: (Second) Conductive Layer 125-1, 125-2, 125-3: Separation Structure 130-1: (First) Protrusion 130-2: (Second) Protrusion 131: First Layer 132: Second Layer 132a: Edge 133: Third Layer 134: Fourth Layer 135: Encapsulation Layer 135-1: First First Insulating Layer 135-2: First Second Insulating Layer 135-3: First Third Insulating Layer 136: Resin Layer 140b: Blue Filter Layer (Color Filter Layer) 140g: Green Filter Layer (Color Filter Layer) 140r: Red Filter Layer (Color Filter Layer) 141b: (Blue) Encapsulation Layer 141g: (Green) Encapsulation Layer 141r: (Red) Encapsulation Layer 143, 144: Encapsulation Layer 161, 162: Particles 171: First Connection Structure 172: Second Connection Structure 173: Third Connection Structure 201: (Second) Photosensitive Pattern 202: (Third) photosensitive pattern 203 - 208: Photosensitive pattern 211 - 216: Photosensitive pattern 221: Photosensitive pattern 230, 230a: Residual film 231, 232, 233, 234: Photosensitive pattern 261, 262, 263: Opening AA: Display area AC: Auxiliary electrode A - A’, B - B’, C - C’: Line segment D1, D2: Opening depth EA: Emission area G01, G02a, G02b, G02c, G03: Steps NAA: Non - display area NEA: Non - emission area OD: Opening depth OG: Opening gap P: Pixel PL1: First power line PL2: Second power line R1 - R7: Resistance value R10: Step SPb: Blue sub - pixel SPg: Green sub - pixel SPr: Red sub - pixel W1, W2: Width

Claims

1. A method of manufacturing an organic light-emitting display device, comprising: forming an anode in each of a red sub-pixel, a green sub-pixel, and a blue sub-pixel on a substrate; forming a first bank between the red sub-pixel and the green sub-pixel and forming a second bank between the green sub-pixel and the blue sub-pixel; respectively forming a first protrusion and a second protrusion on each of the first bank and the second bank; forming a first connection structure on a first side portion of the first protrusion adjacent to the red sub-pixel, and forming a first organic light-emitting element on the red sub-pixel using a first photolithography process; forming a second connection structure on a second side portion of the first protrusion adjacent to a first side portion of the green sub-pixel and the second protrusion, and forming a second organic light-emitting element on the green sub-pixel using a second photolithography process; and forming a third connection structure on a second side portion of the second protrusion adjacent to the blue sub-pixel, and forming a third organic light-emitting element in the blue sub-pixel using a third photolithography process; wherein, each of the first organic light-emitting element to the third organic light-emitting element includes the anode, an organic light-emitting layer including a hole injection layer, and a cathode, wherein each of the first connection structure to the third connection structure includes an auxiliary electrode electrically connecting the cathode, and each of the cathodes respectively contacts one end of the hole injection layer; and wherein the formation of the first bank and the second bank includes: respectively forming an open structure configured to isolate the hole injection layer in the first bank and the second bank.

2. The method according to claim 1, wherein, the formation of the open structure includes: forming a blocking layer that is recessed inwardly from a first side portion and a second side portion of the first bank and a first side portion and a second side portion of the second bank.

3. The method according to claim 1, wherein, the formation of the first organic light-emitting element includes: depositing and patterning a first organic light-emitting layer including a first hole injection layer and a first cathode on the substrate to form the first organic light-emitting layer and the first cathode on the red sub-pixel and the first bank, and wherein the first cathode contacts one end of the first hole injection layer and the auxiliary electrode of the first connection structure.

4. The method according to claim 3, wherein, the first organic light-emitting element is configured to be isolated corresponding to a first open structure formed on the first side portion of the first bank.

5. The method according to claim 3, wherein, the formation of the second organic light-emitting element includes: depositing and patterning a second organic light-emitting layer including a second hole injection layer and a second cathode on the substrate to form the second organic light-emitting layer and the second cathode on the green sub-pixel, the first bank, and the second bank, and wherein the second cathode contacts one end of the second hole injection layer and the auxiliary electrode of the second connection structure.

6. The method according to claim 5, wherein, The second organic light-emitting element is configured to be isolated from a second opening structure formed correspondingly on the second side portion of the first bank and the first side portion of the second bank.

7. The method according to claim 5, wherein, the formation of the third organic light-emitting element includes: depositing and patterning a third organic light-emitting layer including a third hole injection layer and a third cathode on the substrate to form the third organic light-emitting layer and the third cathode on the blue pixel and the second bank, and wherein the third cathode contacts one end of the third hole injection layer and the auxiliary electrode of the third connection structure.

8. The method according to claim 7, wherein, the third organic light-emitting element is configured to be isolated from a third opening structure formed correspondingly on the second side portion of the second bank.

9. The method according to claim 1, wherein, the formation of the cathode includes: forming a first conductive layer configured to electrically connect to the auxiliary electrode, and wherein the first challenging layer includes a Mg:Ag alloy.

10. The method according to claim 1, wherein, the formation of the cathode includes: forming a first conductive layer; and forming a second conductive layer on the first conductive layer to electrically connect to the auxiliary electrode, wherein the first conductive layer includes a Mg:Ag alloy, and wherein the second conductive layer includes a transparent conductive oxide material.

11. The method according to claim 1, further comprising: forming a first color filter layer to a third color filter layer on the first organic light-emitting element to the third organic light-emitting element.

12. The method according to claim 1, further comprising: forming a packaging layer on the first organic light-emitting element, the second organic light-emitting element, and the third organic light-emitting element.