Cold edge low temperature electrostatic chuck

The ESC design with cooling channels, a thin bonding layer, and two temperature zones addresses temperature control issues in plasma etching, enhancing etching rate and uniformity while reducing complexity and costs.

TWI933829BActive Publication Date: 2026-08-01LAM RES CORP
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Patent Information

Application Number
TW110138496
Authority / Receiving Office
TW · TW
Patent Type
Patents
Current Assignee / Owner
Priority Date
2020-10-20
Filing Date
2021-10-18
Publication Date
2026-08-01
Estimated Expiration
2041-10-17

AI Technical Summary

Technical Problem

Existing electrostatic chucks (ESCs) in plasma processing chambers fail to effectively control wafer temperature during plasma etching, leading to uneven etching rates and profiles due to high thermal conductivity at the wafer edges, which can impact the quality of semiconductor wafers and increase system costs with multiple temperature zones and components.

Method used

The ESC design incorporates a base plate with cooling channels, a thin bonding layer, and inner and outer heating elements to create two temperature zones, promoting heat conduction cooling and maintaining a cold edge temperature region, thereby controlling wafer temperature uniformly.

Benefits of technology

This design improves etching rate and uniformity by maintaining the wafer edge at a lower temperature, meeting stringent critical dimension requirements and reducing system complexity and costs by using fewer heaters and components.

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Abstract

An electrostatic chuck is provided. In one example, the electrostatic chuck includes a base plate, a bonding layer disposed above the base plate, a ceramic plate, and a heater. The ceramic plate includes a bottom surface disposed above the bonding layer and a raised top surface for supporting a substrate. The raised top surface includes an outer diameter. The heater is disposed between the bottom surface of the ceramic plate and the bonding layer. The heater element includes an inner heating element and an outer heating element. The inner heating element is disposed in a central circular region adjacent to the bottom surface of the ceramic plate, while the outer heating element is disposed in an annular region surrounding the central circular region and adjacent to the bottom surface of the ceramic plate. The outer diameter of the outer heating element is embedded from the annular heater recessed region of the ceramic plate. The annular heater recessed region is located between the outer diameter of the raised top surface and the outer diameter of the outer heating element. The base plate includes a plurality of cooling channels. The plurality of cooling channels are disposed below the inner heating element, below the outer heating element, and below the annular heater recessed region. Each of the plurality of cooling channels is configured to allow the flow of cooling fluid to generate heat conduction cooling in the recessed area of ​​the annular heater on the ceramic plate.
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