High electron mobility transistor device
By relocating source field plate contacts within the active region, the HEMT device enhances the active region's utilization, leading to reduced on-resistance through extended source and drain buses.
TWI934709BActive Publication Date: 2026-08-01HIPER SEMICONDUCTOR INC
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Patent Information
- Application Number
- TW114126046
- Authority / Receiving Office
- TW · TW
- Patent Type
- Patents
- Current Assignee / Owner
- Filing Date
- 2025-07-09
- Publication Date
- 2026-08-01
- Estimated Expiration
- 2045-07-08
AI Technical Summary
Technical Problem
The existing high electron mobility transistor (HEMT) devices face higher on-resistance due to the limited active region area caused by the need to reserve space for source field plate contact portions in the terminal region.
Method used
The source field plate contact portions are relocated within the active region, allowing for a more efficient use of the active region, thereby increasing the length of the source and drain buses and reducing on-resistance.
Benefits of technology
This configuration effectively utilizes the active region, increasing the length of the source and drain buses, thus reducing the on-resistance of the HEMT device.
✦ Generated by Eureka AI based on patent content.
Abstract
A high electron mobility transistor device includes an active region, two gate buses, a source bus, a first source field plate, a plurality of source contacts, a second source field plate, a top metal layer, and second source field plate contacts. The two gate buses are located in the active region and extend along a first direction. The source bus is located in the active region and disposed between the two gate buses. The first source field plate is located in the active region and at least partially overlaps the two gate buses. The second source field plate is located in the active region and is disposed above the first source field plate. The top metal layer is located above the second source field plate. The plurality of source contacts are disposed on the source bus and electrically connected to the top metal layer. The second source field plate contacts are located in the active region and electrically connect the second source field plate to the top metal layer, such that the second source field plate is electrically connected to the source bus.
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