Multi-tier device and method for providing the same

Abstract

The various embodiments described herein relate to a device having a voltage regulation architecture having multiple layers configured in a multilayer structure. The device may include one or more layers having a voltage regulation circuitry configured to manage at least one of process variations and temperature variations between the multiple layers of the multilayer structure.

Description

Technical field

[0001] [Inter-reference of relevant applications]

[0002] This application asserts priority and title to Temporary Patent Application No. 63 / 127,586 titled Multi-Layer Voltage Regulation Architecture filed on December 18, 2020, which is hereby incorporated herein by reference.

[0003] The invention relates to 3D multi-order architectural schemes and techniques for logic and memory applications in physical design. Prior technology

[0004] This section is used to provide information related to understanding the various techniques described in this paper. As meant by the title of such section, this is a discussion of the relevant technology, which shall not in any way mean that it is prior technology. Usually, the relevant technology may or may not be considered as prior technology. It should therefore be understood that any statements in this section should be read in this view and should not be read as any acknowledgment of prior technology.

[0005] In some familiar circuit designs, the process skew between multiple stacked grains in layered wafers for vertically folded data generally requires large protective bands. Furthermore, process skewness can be removed by expensive grading (binning) based on the process corner of each grain in the test stack, followed by stacking only matching grains. This one matching procedure can increase cost and may not be feasible for wafer-to-wafer bonding where the wafer is cut only after the connection has been made. Furthermore, in vertically stacked grains, different layers can have different temperatures, leading to further variation among multiple layers, and thus such variation cannot be repaired by recourse to fractionation. Therefore, there is a need to improve the efficiency of assessing process deflection and / or assessing temperature deflection in vertically stacked grains in some modern circuit designs and related applications. Contents of the invention

[0006] Various embodiments of a device are described herein. The device may include a voltage regulating architecture having a multilayer structure having a plurality of layers, wherein one or more layers of the plurality of layers may have a voltage regulating circuit system configured to manage at least one of the process variation and temperature variation between the plurality of layers of the multilayer structure.

[0007] This document describes various embodiments of a device having multiple stages, including a first stage and a second stage. The first stage may include a first circuit system having a first signal path and a second signal path, and the second stage may include a second circuit system having a third signal path and a fourth signal path. The first signal path may be coupled to the third signal path to provide a first continuous signal path between the first stage and the second stage. The second signal path may be coupled to the fourth signal path to provide a second continuous signal path between the first stage and the second stage, such that the second continuous signal path replicates the first continuous signal path.

[0008] This document describes various embodiments of a method. The method couples a first voltage regulation circuit system to a second voltage regulation circuit system via conductive lines to provide voltage regulation at various stages to manage variations between a first stage and a second stage. The method operates the first voltage regulation circuit system together with the second voltage regulation circuit system to balance process variations or skews attributable to temperature differences in the first and second stages by using different voltage offsets (ΔV) applied to an external voltage supply. Simple Explanation of the Diagram

[0009] This document describes various schemes and technical implementations with reference to the accompanying drawings. However, it should be understood that the drawings only illustrate the various implementations described herein and are not intended to limit the embodiments of the various technologies described herein. [Figure 1] A diagram illustrating a three-dimensional (3D) architecture with per-layer voltage regulation according to various implementation schemes described herein. Figures 2A and 2B illustrate memory architectures in single and multi-level configurations according to the various implementation schemes described herein. [Figure 3] A diagram illustrating a single-domain power delivery network according to the various implementation schemes described herein. [Figure 4] A diagram illustrating a multi-domain power delivery network according to the various implementation schemes described herein. [Figure 5] A diagram illustrating a three-dimensional (3D) multi-domain power delivery network according to the various implementation schemes described herein. [Figure 6] illustrates a method for providing a multi-tier memory architecture according to the implementation described herein. Implementation

[0010] The various implementation schemes described herein relate to 3D multi-tier architecture schemes and technologies for logic and memory applications in physical designs. For example, the various schemes and technologies described herein can provide enhanced per-tier voltage regulation in 3D multi-tier memory architectures to manage process and / or temperature variations between multiple tiers. Furthermore, the various schemes and technologies described herein can be configured to provide 3D on-chip circuitry systems with per-tier voltage regulation to manage process and / or temperature variations between multiple tiers.

[0011] The various implementations described herein refer to multilayer voltage regulation schemes and technologies for managing process and / or temperature variations in physical layout design applications. For example, the various implementations described herein relate to three-dimensional (3D) stacked die configurations with voltage regulation at each layer, which can be configured to offset the voltage regulator output on each individual layer to balance process skew and variations attributable to temperature differences between layers.

[0012] In some implementations, process skew between dies stacked in a 3D wafer can be addressed using a guard band for any data path folded in 3D. This process skew can be removed by expensive grading based on testing the process angles of each die and then stacking only the matched dies. This matching process can increase costs and may be impractical for wafer-to-wafer bonding where the wafer is only cut after interconnection. Furthermore, in 3D stacked systems, different layers can have different temperatures, leading to further inter-layer variability that cannot be corrected by grading. Additionally, clock tree balancing can be an issue during design, and inter-layer process skew can be large, further increasing the need for guard bands, and these issues generally result in performance degradation.

[0013] In some implementations, to overcome problems caused by process variations, the various implementations described herein utilize layer-specific voltage regulators (VRegs) in a multilayer structure. For example, process skew and variations attributable to temperature differences across multiple layers can be balanced by using a small offset (ΔV) in the voltage supply to match variations in those layers. In various cases, ΔV can be sufficiently small and no level offset may be required between relatively similar voltage domains. By using the proposed layer-specific VRegs, the average distribution between layers can be matched, and in some cases, an exact match of the average distribution may not be possible, but variations similar to or smaller than those used in similar techniques for 2D guard bands can be achieved.

[0014] This article will describe various implementation schemes for various multi-level memory architectures with reference to Figures 1 to 6.

[0015] Figure 100 illustrates a three-dimensional (3D) architecture 104 with layer voltage regulation configurations according to various implementation schemes described herein.

[0016] In various implementations, the 3D architecture 104 can be implemented as a system or device having various integrated circuit (IC) components configured and coupled together as an assembly or combination of components providing physical circuit design and various related structures. In some cases, methods of designing, providing, manufacturing, and fabricating the 3D architecture 104 into an integrated system or device may involve the use of the various IC circuit components described herein to implement various manufacturing schemes and techniques associated with it. Furthermore, the 3D architecture 104 can be integrated with computing circuit systems and various related components on a single chip, and the 3D architecture 104 can be implemented and incorporated into various embedded systems for automotive, electronic, mobile, server, and Internet-of-things (IoT) applications, including remote sensor nodes.

[0017] As shown in Figure 1, the 3D architecture 104 can refer to a three-dimensional (3D) architecture with a multi-level configuration. For example, the 3D architecture 104 may include multiple levels, such as a first level (Tier_0) and a second level (Tier_1) configured in a 3D stacked structure. In some cases, the first level (Tier_0) may include a first circuit system having a first signal path (1st path) and a second signal path (2nd path), and the second level (Tier_2) may include a second circuit system having a third signal path (3rd path) and a fourth signal path (4th path). The first signal path (1st path) may be coupled to the third signal path (3rd path) to provide a first continuous signal path 118A between the first level (Tier_0) and the second level (Tier_1). Furthermore, the second signal path (2nd path) may be coupled to a fourth signal path (4th path) to provide a second continuous signal path 118B between the first order (Tier_0) and the second order (Tier_1), which replicates the first continuous signal path 118A. In some cases, the first continuous signal path 118A may be referred to as a first 3D connection (3DC) 118A, and the second continuous signal path 118B may be referred to as a second 3D connection (3DC) 118B.

[0018] In various implementations, the 3D architecture 104 can be configured to provide a multi-tier 3D architecture, which refers to a three-dimensional (3D) stacked die with voltage regulation (VR) at each layer, thereby managing process variations between multiple tiers (Tier_0, Tier_1) of the multi-tier 3D architecture 104. Furthermore, in some cases, the 3D stacked die may have a asynchronous 3D boundary, which is described in more detail below with reference to FIG5.

[0019] In various implementations, the 3D architecture 104 may include voltage regulation (VR) circuit systems at each stage, such that each stage has a local voltage regulation (local Vreg) circuit system. For example, as shown in FIG1, the first circuit system disposed in the first stage (Tier_0) may include a first voltage regulation circuit system (LVR_1), and the second circuit system disposed in the second stage (Tier_1) may include a second voltage regulation circuit system (LVR_2), which is coupled to the first voltage regulation circuit system (LVR_1) via an inter-tier external Vin connection 124. Furthermore, in various cases, process variations between the first stage (Tier_0) and the second stage (Tier_1) may be managed by the first voltage regulation circuit system (LVR_1) and the second voltage regulation circuit system (LVR_2).

[0020] In various embodiments, a first voltage regulation circuit system disposed in the first stage (Tier_0) can be coupled via a conductive line to a second voltage regulation circuit system disposed in the second stage (Tier_1) to provide voltage regulation (VR) for each stage to manage process and / or temperature variations between the first stage (Tier_0) and the second stage (Tier_1). Furthermore, in various embodiments, the first and second voltage regulation circuit systems operate to balance process variations and / or skews attributable to temperature differences between the first stage (Tier_0) and the second stage (Tier_1) by using a voltage offset (ΔV) applied to an external voltage supply (external Vin) 124 to provide matched voltages in the first stage (Tier_0) and the second stage (Tier_1).

[0021] Referring to Tier 0, a local Vreg (LVR_1) may be coupled to at least one logic device (e.g., LG1), such as sequential logic, to provide a voltage supply (Vdd) to the logic device (LG1). Furthermore, the logic device (LG1) may have a clock input (CLK) that receives a clock signal via a first signal path (1st path), and the logic device (LG1) may be configured to provide an internal signal to other logic circuitry (e.g., LG3) via an output (Q) through a second signal path (2nd path). The logic device (LG3) may refer to combinational logic. In some cases, as shown in FIG1, the first signal path (1st path) may pass from Tier 0 to Tier 1 via a first 3D connection (3DC) 118A. Furthermore, as shown in Figure 1, the second signal path (2nd path) can be transmitted from the first level (Tier_0) to the second level (Tier_1) via the second 3D connection (3DC) 118B through the logic circuit system (LG3).

[0022] Referring to Tier 1, a local Vreg (LVR_2) may be coupled to at least one logic device (e.g., LG2), such as sequential logic, to provide a regulated (or adjusted) voltage supply (Vdd ± ΔV) to the logic device (LG2). Furthermore, the logic device (LG2) may include a clock input (CLK) that can receive a clock signal from a first signal path (1st path) via a third signal path (3rd path) through a 3D connection (3DC) 118A. Additionally, the logic device (LG2) may be configured to receive an internal data signal from another logic circuit system (e.g., LG4) via an input (D) through a 4th signal path (4th path). The logic device (LG4) may refer to combinational logic. Furthermore, a first local Vreg (LVR_1) located in Tier 0 may be coupled to a second local Vreg (LVR_2) located in Tier 1 via a conductive line.

[0023] In some implementations, voltage regulation (VR) at various levels can be used to manage process variability and / or temperature variability between Tier 0 and Tier 1. Furthermore, the first local Vreg (LVR_1) and the second local Vreg (LVR_2) can be configured to provide matched voltages in Tier 0 and Tier 1 by using a voltage offset (ΔV) applied to an external voltage supply (external Vin) 124, thereby balancing process variability and / or skew attributable to temperature differences between Tier 0 and Tier 1. These and various other configurations, features, and characteristics are described in more detail below.

[0024] Figures 2A and 2B illustrate memory architectures with single and multi-level configurations according to the embodiments described herein. Specifically, Figure 2A shows a two-dimensional (2D) memory architecture 204A with a single-level configuration, and Figure 2B shows a 3D memory architecture 204B with a multi-level configuration.

[0025] In various implementations, memory architectures 204A and 204B can be implemented as systems or devices having various integrated circuit (IC) components configured and coupled together as assemblies or combinations of components providing physical circuit designs and various related structures. In some cases, methods of designing, supplying, manufacturing, and fabricating memory architectures 204A and 204B into integrated systems or devices may involve the use of the IC circuit components described herein to implement associated manufacturing schemes and techniques. Furthermore, memory architectures 204A and 204B can be integrated with computing circuit systems and / or various related components on a single chip, and furthermore, memory architectures 204A and 204B can be implemented and incorporated into various embedded systems for automotive, electronic, mobile, server, and Internet of Things (IoT) applications, including remote sensor nodes.

[0026] As shown in Figure 2A, memory architecture 204A can refer to a 2D memory architecture configured in a single-level manner. Memory architecture 204A may have a single-level configuration including a first level (Tier_0) having a first circuit system having a first signal path (actual path) 244 and a second signal path (copy path) 248. The first circuit system may include one or more logic circuits (such as, for example, bit unit 224, copy bit unit 228, decoder and word line driver 234, and input / output (IO) and control 238), which are coupled together and configured to provide various memory functions. In some cases, the first signal path (actual path) 244 may refer to a first consecutive signal path through logic circuits 224, 228, 234, and 238. Furthermore, the second signal path (copy path) 248 may refer to a second consecutive signal path through logic circuits 228, 234, and 238. In various cases, the route of the second signal path (copy path) 248 may differ from that of the first signal path (actual path) 244.

[0027] As shown in Figure 2B, the memory architecture 204B can refer to a 3D memory architecture with a multi-tier configuration. The memory architecture 204B may include multiple tiers, including a first tier (Tier_0) and a second tier (Tier_1). The first tier (Tier_0) may include a first circuit system having various logic circuits 224A, 228A, 234A, and 238A, and the second tier (Tier_1) may include a second circuit system having various logic circuits 224B, 234B, and 238B. In some cases, the multi-tier configuration can provide a first signal path (actual path) 244 as a first continuous signal path, which is coupled between the first tier (Tier_0) and the second tier (Tier_1) via 3DC 218A. Furthermore, the multi-tier configuration can provide a second signal path (replica path) 248 as a second continuous signal path, which is coupled between the first tier (Tier_0) and the second tier (Tier_1) via 3DC 218B. In various cases, the first continuous path can be divided into multiple parts coupled together by 3DC 218A, wherein a first part is disposed in the first stage (Tier_0) and a second part is disposed in the second stage (Tier_1). Furthermore, in various cases, the second continuous path can be divided into multiple parts coupled together by 3DC 218B, wherein a first part is disposed in the first stage (Tier_0) and a second part is disposed in the second stage (Tier_1).

[0028] The first circuit system may include logic circuits (such as, for example, bit unit 224A, copy bit unit 228A, decoder and word line driver 234A, and I / O and control 238A), which are coupled together and configured in the first tier (Tier_0) to provide various memory functions. Furthermore, the second circuit system may include logic circuits (such as, for example, bit unit 224B, decoder and word line driver 234B, and I / O and control 238B), which are coupled together and configured in the second tier (Tier_1) to provide various memory functions. As shown in FIG2B, the first signal path (actual path) 244 provides a first continuous signal path through the logic circuits 238A and 234A in the first tier (Tier_0) and the logic circuits 224B and 238B in the second tier (Tier_1). Furthermore, as shown in Figure 2B, the second signal path (copy path) 248 can provide a second continuous signal path that passes through logic circuits 238A and 228A in the first tier (Tier_0) and logic circuit 238B in the second tier (Tier_1). In various cases, the route of the second signal path (copy path) 248 through these tiers (Tier_0, Tier_1) may differ from the first signal path (actual path) 244.

[0029] Figure 3 illustrates Figure 300 of a single-domain power delivery network (PDN) 304 according to the various implementation schemes described herein.

[0030] In various implementations, the single-domain PDN 304 can be implemented as a system or device having various integrated circuit (IC) components configured and coupled together as an assembly or combination of components providing physical circuit designs and various related structures. In some cases, the methods of designing, supplying, manufacturing, and fabricating the single-domain PDN 304 into an integrated system or device may involve the use of the various IC circuit components described herein to implement various associated manufacturing schemes and technologies. Furthermore, the single-domain PDN 304 can be integrated with computing circuit systems and various related components on a single chip, and the single-domain PDN 304 can be implemented and incorporated into various embedded systems for various automotive, electronic, mobile, server, and Internet of Things (IoT) applications, including remote sensor nodes.

[0031] As shown in Figure 3, the single-domain PDN 304 can refer to a single-layer voltage regulation (VR) architecture with a single-layer structure, wherein the single layer can refer to a single stage. The single-layer VR architecture may include various circuit systems (such as, for example, a local voltage regulator circuit (Vreg) 310, a sensing and control circuit 314, and a load 318), which are coupled together in the single stage and configured to provide voltage regulation. The single-layer VR architecture may also include a conductive boundary line 320, which provides an external input voltage (external Vin) to the local Vreg 310 via an input node (n1). Therefore, in some cases, the external Vin is supplied to the local Vreg 314, which is configured to provide a regulated (or adjusted) voltage supply (Vdd ± ΔV) to the load 318. Furthermore, in some cases, as shown in Figure 3, local Vreg 310 receives external Vin at node (n1), receives feedback control voltage (fb_ctrl) from sensing and control circuitry 314, and provides a regulation (or adjustment) voltage supply (Vdd ± ΔV) to load 318. Additionally, sensing and control circuitry 314 receives the regulation (or adjustment) voltage supply (Vdd ± ΔV) from local Vreg 310, receives feedback input voltage (fb_in) from an external source, and provides feedback control voltage (fb_ctrl) to local Vreg 310. Furthermore, in various cases, local Vreg 310 can use process sensor 314 to sense the regulated output voltage (Vdd ± ΔV) from local Vreg 310, where process sensor 314 provides feedback control (fb_ctrl) to local Vreg 310 to track, manage, and / or compensate for local process variations and / or skew in the single layer.

[0032] In some implementations, local Vreg 310 is configured to manage temperature variations within a single layer of the single-domain PDN 304. Furthermore, local Vreg 310 can be configured to offset the voltage regulator output (Vdd ± ΔV) supplied to load 318 based on a feedback control voltage (fb_ctrl) to balance process variations and / or skew attributable to temperature differences within the single layer. Therefore, in various cases, local Vreg 310 is configured to balance process variations and / or skew attributable to temperature differences on the single layer by using a voltage offset (ΔV) applied to an external voltage supply (external Vin). In various cases, conductive boundary 320 can be configured to provide an external voltage supply (external Vin) from an external source.

[0033] In various implementations, as shown in Figure 3, the single-domain PDN 304 can be implemented using a voltage regulation (VR) architecture with a local voltage regulator (local Vreg) 310 and sensing and control circuitry 314 coupled to a load 318. Furthermore, power is supplied as an external voltage supply (Vin) from an external power source (which is provided as an input to the local Vreg 310) to the local voltage regulator (local Vreg) 310. To avoid IR drop on the external Vin supply before reaching the local Vreg 310, a grid 320 can be used to connect the external Vin supply to the local Vreg 310. In some cases, the grid 320 may refer to conductive boundary lines configured as a mesh.

[0034] In some implementations, the power grid 320 may be tapped by a local Vreg 310 (e.g., at node n1), and thus the power grid 320 supplies the load (or load circuit) 118 with a local grid voltage (e.g., Vdd). Furthermore, the local Vreg 310 may be configured to provide a local regulator output voltage (Vdd ± ΔV) sensed by a programmable sensor 314, which provides feedback control (fb_ctrl) to the local Vreg 310. In some cases, the local Vreg 310 may be configured to track, manage, and / or compensate for local process skew and variation, which can result in more precise distribution and thus improved performance.

[0035] In some implementations, the programmable sensor and controller 314 may have various combinations of logic circuitry, such as logic gates (e.g., inverters, NAND gates, NOR gates, and / or various specialized circuitry for matching n-only and p-only devices). Furthermore, in some cases, closed-loop control with local Vreg 310 can be configured to reduce the mean square error of the average count from the logic circuitry to balance the single-domain layer. Alternatively, a reference count can be used, in which case some other sensor outputs can communicate with the sensor and controller 314 from external circuitry.

[0036] In some implementations, the program sensor and controller 314 may receive one or more external signals from various other circuit systems. For example, the program sensor and controller 314 may receive an optional feedback input signal (e.g., fb_in or similar) from another layer (or other circuit system) as a program sensor output from one or more adjacent layers (or adjacent logic circuit systems) for fb_in sensing and / or control. Therefore, in some cases, the program voltage fb_in may be received by the program sensor and controller 314 as a sensor output from an adjacent layer (e.g., one or more layers above and / or below) and / or an adjacent (or adjacent) local Vreg in an adjacent (or nearby) local Vreg circuit system for fb_in sensing and / or control. Therefore, in this example, the programmable sensor and controller 314 can receive feedback from the sensor output (fb_in) of an adjacent layer (or other local Vreg circuit system) or a centralized controller (or independently from an external output convergence) used by one or more or all programmable sensors to generate a feedback control signal (fb_ctrl).

[0037] Figure 4 illustrates a multi-domain power delivery network (PDN) 404 according to various embodiments described herein. Referring to Figure 4, the multi-domain PDN 404 may have similar features, components, and characteristics to the single-domain PDN 304 shown in Figure 3.

[0038] In various implementations, the multi-domain PDN 404 can be implemented as a system or device having various integrated circuit (IC) components configured and coupled together as an assembly or combination of components providing physical circuit designs and various related structures. In some cases, methods of designing, supplying, manufacturing, and fabricating the multi-domain PDN 404 into an integrated system or device may involve the use of the various IC circuit components described herein to implement various associated manufacturing schemes and technologies. Furthermore, the multi-domain PDN 404 can be integrated with computing circuit systems and various related components on a single chip, and furthermore, the multi-domain PDN 404 can be implemented and incorporated into various embedded systems for various automotive, electronic, mobile, server, and / or Internet of Things (IoT) applications, including remote sensor nodes.

[0039] As shown in Figure 4, the multi-domain PDN 404 can refer to a single-layer voltage regulation (VR) architecture with a single-layer structure. This single-layer structure has an array of a single layer and multiple single-domain PDNs (304A, 304B, …, 304I), where the single layer can refer to a single stage. Furthermore, each single-domain PDN (304A, 304B, …, 304I) may include various circuit systems (such as, for example, local voltage regulator circuits (Vreg) 310, sensing and control circuits 314, and loads 318), which are coupled together in the single stage and configured to provide voltage regulation (VR). The single-layer VR architecture may also include conductive boundary lines 320, which provide an external input voltage (external Vin) to each local Vreg 310 via input nodes (n1). Therefore, in all cases, the external Vin is supplied to each local Vreg 314, which is configured to provide a regulated (or adjusted) voltage supply (Vdd ± ΔV) to the load 318 in each single-domain PDN (304A, 304B, …, 304I). Furthermore, in all cases, as shown in Figure 4, each local Vreg 310 receives the external Vin at node (n1), receives the feedback control voltage (fb_ctrl) from the sensing and control circuit 314, and also provides a regulated (or adjusted) voltage supply (Vdd ± ΔV) to the load 318. Additionally, the sensing and control circuit 314 receives the regulated (or adjusted) voltage supply (Vdd ± ΔV) from the local Vreg 310, receives the feedback input voltage (fb_in) from an external source, and provides the feedback control voltage (fb_ctrl) to the local Vreg 310.

[0040] In various implementations, each local Vreg 310 in each single-domain PDN (304A, 304B, …, 304I) can be configured to manage temperature variations within a single layer of the multi-domain PDN 404. Furthermore, each local Vreg 310 can be configured to offset the voltage regulator output (Vdd ± ΔV) supplied to the load 318 based on a feedback control voltage (fb_ctrl) to balance process variations and / or skew attributable to temperature differences within that single layer. Therefore, in various cases, each local Vreg 310 is configured to balance process variations and / or skew attributable to temperature differences on that single layer, for example, by using a voltage offset (ΔV) applied to an external voltage supply (external Vin). In various cases, the conductive boundary line 320 can be configured to provide an external voltage Vin to each single-domain PDN (304A, 304B, …, 304I) from an external source.

[0041] In various implementations, as shown in Figure 4, the multi-domain PDN 404 can be implemented using a voltage regulation architecture having multiple local voltage regulators (LVregs) 310 configured in a grid pattern (e.g., an array, or the like), along with multiple sensing and control circuits (S&C) 314 coupled to multiple local loads (or load circuits) 318. In some cases, power is supplied as an external voltage supply (Vin) from an external power source (which is provided as input to each local Vreg 310) to the local voltage regulators (local Vregs) 310. To avoid IR drop on the external Vin supply before reaching the local Vregs 310, a grid 320 can be used to connect the external Vin supply to the local Vregs 310. In some cases, the grid 320 may refer to multiple conductive boundary lines configured in a grid pattern (e.g., a grid, or the like).

[0042] In some implementations, the power grid 320 may be tapped by local Vregs 310 (e.g., at various nodes n1), and thus the power grid 320 supplies the load (or load circuit) 318 with a local grid voltage (e.g., Vdd). Furthermore, each local Vreg 310 may be configured to provide a local regulator output voltage (Vdd ± ΔV) sensed by each process sensor 314, which provides feedback control (fb_ctrl) to each local Vreg 310. In some cases, each local Vreg 310 may be configured to track, manage, and / or compensate for local process skew and variation, which can result in more precise distribution and improved performance.

[0043] Figure 5 illustrates a 3D multi-domain power delivery network (PDN) 504 according to various embodiments described herein. Referring to Figure 5, the 3D multi-domain PDN 504 may have similar features, components, and characteristics to the single-domain PDN 304 shown in Figure 3 and the multi-domain PDN 404 shown in Figure 4.

[0044] In various implementations, the 3D multi-domain PDN 504 can be implemented as a system or device having various integrated circuit (IC) components configured and coupled together as an assembly or combination of components providing physical circuit designs and various related structures. In some cases, methods of designing, supplying, manufacturing, and fabricating the 3D multi-domain PDN 504 into an integrated system or device may involve the use of the various IC circuit components described herein to implement various associated manufacturing schemes and technologies. Furthermore, the 3D multi-domain PDN 504 can be integrated with computing circuit systems and related components on a single chip, and furthermore, the 3D multi-domain PDN 504 can be implemented and / or incorporated into various embedded systems for various automotive, electronic, mobile, server, and / or Internet of Things (IoT) applications, including remote sensor nodes.

[0045] As shown in Figure 5, the 3D multi-domain PDN 504 can refer to a multi-layer voltage regulation (VR) architecture with a multi-layer structure. This multi-layer structure has multiple layers and one or more layers of an array with multiple single-domain PDNs (304A, 304B, …, 304I), wherein the multi-layer architecture can refer to a multi-level architecture. Furthermore, each single-domain PDN (304A, 304B, …, 304I) in one or more layers may include various circuit systems (such as, for example, local Vreg 310, sensing and control circuitry 314, and load 318), which are coupled together and configured in one or more layers or levels to provide voltage regulation (VR). The multi-layer VR architecture may also include 3D conductive boundary lines 320 (in the xyz direction), which provide external input voltage (external Vin) to each local Vreg 310 via nodes (n1) in one or more layers. Therefore, in various cases, an external Vin is supplied to each local Vreg 314 in one or more layers, which is configured to provide a regulated (or adjusted) voltage supply (Vdd ± ΔV) to the load 318 in each single-domain PDN (304A, 304B, …, 304I). Furthermore, as described herein, each local Vreg 310 in one or more layers receives the external Vin at node (n1), receives a feedback control voltage (fb_ctrl) from the sensing and control circuitry 314, and also provides a regulated (or adjusted) voltage supply (Vdd ± ΔV) to the load 318. Additionally, as described herein, the sensing and control circuitry 314 receives a regulated (or adjusted) voltage supply (Vdd ± ΔV) from the local Vreg 310, receives a feedback input voltage (fb_in) from an external source, and also provides a feedback control voltage (fb_ctrl) to the local Vreg 310.

[0046] In various implementations, a 3D voltage-controlled architecture can refer to a multilayer structure having multiple layers (Layer_1, Layer_2, Layer_3), wherein one or more layers of the multiple layers (Layer_1, Layer_2, Layer_3) have a voltage-controlled circuitry system (LVreg 310) configured to manage process variations between the multiple layers (Layer_1, Layer_2, Layer_3) of the multilayer structure. As shown in Figure 5, a multilayer structure can refer to a three-dimensional (3D) stacked die with voltage control for each layer to manage process variations between the multiple layers (Layer_1, Layer_2, Layer_3) of the multilayer structure, and furthermore, the 3D stacked die may have a asynchronous 3D boundary. Furthermore, the multilayer structure may include any number of layers such as (for example), a first layer (Layer_1), a second layer (Layer_2), and a third layer (Layer_3), wherein one or more layers may have an array of multiple single-domain PDNs (304A, 304B, …, 304I). In some cases, as shown in Figure 5, the corner 3D conductive line 320 may be larger than other 3D conductive lines 320 disposed between and within the layers (Layer_1, Layer_2, Layer_3).

[0047] In various implementations, each local Vreg 310 in each single-domain PDN (304A, 304B, …, 304I) can be configured to manage temperature variations within one or more layers of the multiple layers (Layer_1, Layer_2, Layer_3) of the 3D multi-domain PDN 504. Furthermore, each local Vreg 310 can be configured to offset the voltage regulator output (Vdd ± ΔV) supplied to the load 318 based on a feedback control voltage (fb_ctrl) to balance process variations and / or skew attributable to temperature differences in that single layer. Therefore, in various cases, each local Vreg 310 is configured to balance process variations and / or skew attributable to temperature differences on one or more of the multiple layers (Layer_1, Layer_2, Layer_3) by using a voltage offset (ΔV) applied to an external voltage supply (external Vin). In various cases, the conductive boundary line 320 can be configured to provide external Vin to one or more layers (Layer_1, Layer_2, Layer_3) via one or more conductive package connections, such as (for example) package bumps (pkg_bump_1, pkg_bump_2, pkg_bump_3, pkg_bump_4) to external sources of the 3D multi-domain PDN 504.

[0048] In some implementations, a voltage regulation circuitry (e.g., LVreg 310) can be configured to manage temperature variations between multiple layers (Layer_1, Layer_2, Layer_3) of a multilayer structure. Furthermore, the voltage regulation circuitry (e.g., LVreg 310) for one or more layers can offset the output of one or more layer voltage regulators to balance process variations and / or skew attributable to temperature differences between the multiple layers (Layer_1, Layer_2, Layer_3). Additionally, in some cases, the voltage regulation circuitry (e.g., LVreg 310) for one or more layers can include one or more voltage regulators interconnected by conductive boundary lines 320, and furthermore, one or more voltage regulators for one or more layers can be configured to provide voltage regulation for each layer to manage process variations between the multiple layers (Layer_1, Layer_2, Layer_3) of the multilayer structure. Furthermore, one or more voltage regulators in one or more layers can be configured to use a voltage offset (ΔV) applied to an external voltage supply (external Vin) via conductive boundary line 320 to provide matched voltages in multiple layers (Layer_1, Layer_2, Layer_3) to balance process variations and / or skews attributable to temperature differences in multiple layers (Layer_1, Layer_2, Layer_3).

[0049] In some implementations, conductive line 320 can be configured to provide an external voltage supply (external Vin) from an external source, and furthermore, the external source can direct electrical package bonding, such as, for example, connectors, probes, pins, or bumps. For example, as shown in FIG5, conductive package bonding can refer to one or more package bumps (pkg_bump_1, pkg_bump_2, pkg_bump_3, pkg_bump_4). Furthermore, in various cases, voltage and / or power to the 3D multi-domain PDN 504 can be supplied from an external source as input to voltage regulators (LVreg 310) in one or more layers (Layer_1, Layer_2, Layer_3). Additionally, a Z-dimensional electrical grid can be configured to use conductive boundary line 320 to couple or connect the external voltage supply (external Vin) to one or more layers (Layer_1, Layer_2, Layer_3). Furthermore, as described herein, each voltage regulator (LVreg 310) of one or more layers may have a program sensor (e.g., 314) configured to sense the regulated output voltage from the voltage regulator (LVreg 310) and also provide feedback control (fb_ctrl) to the voltage regulator (LVreg 310) to track, manage, and / or compensate for local process variations and / or skews in one or more layers (Layer_1, Layer_2, Layer_3).

[0050] In some implementations, as shown in Figure 5, the multi-layer, multi-domain power delivery network (PDN) 504 can be implemented using a voltage regulation architecture having a multi-layer (e.g., multi-level) structure with multiple layers (Layer_1, Layer_2, Layer_3). In various implementations, one or more layers (Layer_1, Layer_2, Layer_3) may include voltage regulation circuitry (304A, 304B, …, 304I) configured to manage process variations between the layers of the multi-layer structure. In some cases, the multi-layer structure may refer to a three-dimensional (3D) stacked die with voltage regulation for each layer to manage process variations between the layers of the multi-layer structure. Furthermore, in addition to managing process variations, the voltage regulation circuitry (304A, 304B, …, 304I) may be configured to manage temperature variations between the layers of the multi-layer structure. In addition, the voltage regulation circuitry system (304A, 304B, …, 304I) of one or more layers (Layer_1, Layer_2, Layer_3) can offset the voltage regulator output for one or more layers (Layer_1, Layer_2, Layer_3) to balance process variations and / or skews attributable to temperature differences between the layers.

[0051] In some cases, the voltage regulation circuitry system (304A, 304B, …, 304I) of one or more layers (Layer_1, Layer_2, Layer_3) may include one or more voltage regulators 310 interconnected by conductive boundary lines of the power grid 320. The voltage regulators 310 of one or more layers (Layer_1, Layer_2, Layer_3) may be configured to provide voltage regulation for each layer to manage process variations between the layers of a multilayer structure. Furthermore, the voltage regulators 310 of one or more layers (Layer_1, Layer_2, Layer_3) may be configured to provide matched voltages across the layers by using a voltage offset (ΔV) applied to an external voltage supply (e.g., Vin regulated to Vdd) to balance process variations and / or skew attributable to temperature differences across the layers. Furthermore, the conductive boundary lines can be configured to provide an external voltage supply (Vin) via one or more conductive package bumps (pkg_bump_1, pkg_bump_2, pkg_bump_3, pkg_bump_4). Additionally, power can be supplied from the conductive package bumps (pkg_bump_1, pkg_bump_2, pkg_bump_3, pkg_bump_4) as input to the voltage regulators 310 in each layer. Furthermore, the power grid 320 can refer to a Z-dimensional power grid configured to use the conductive boundary lines to connect the external voltage supply (Vin) to each layer. Additionally, each voltage regulator 310 in one or more layers may include a programmable sensor and a controller 314 configured to sense the regulated output voltage from the voltage regulator 310 and provide feedback control (fb_ctrl) to the voltage regulator 310 to track, manage, and / or compensate for local process variations and skews in each layer.

[0052] In some implementations, as shown in Figure 5, the grid 320 may include additional vertical (or Z-dimensional) interconnects disposed adjacent to and / or between multiple layers (Layer_1, Layer_2, Layer_3). For example, the grid 320 may have four corner-based vertical lines from four encapsulation bumps, along with eight additional side-based Z-lines between the four corner-based vertical lines, which can be used to reinforce the Z-grid. In this case, as shown in Figure 5, two vertical lines are disposed on each side of the grid 320 between the corner-based vertical lines. Therefore, in some cases, the additional Z-grid lines between these layers and / or corners can add significant strength to the Z-dimensional grid 320.

[0053] Figure 6 illustrates a method 600 for providing a multi-level configuration memory architecture according to the implementation scheme described herein.

[0054] It should be understood that even though method 600 specifies a particular order of operations, in some cases, the various parts of the operations may be executed in different orders and on different systems. In other cases, additional operations and / or steps may be added to method 600 and / or omitted from the method. Furthermore, method 600 may be implemented in hardware and / or software. For example, if implemented in hardware, method 600 may be implemented using various components and / or circuit systems, as described in Figures 1 to 5. In addition, in other cases, if implemented in software, method 600 may be implemented as a program or software instruction set configured to provide a 3D multilevel memory architecture as described herein. In addition, in other cases, if implemented in software, the instructions related to implementing method 600 may be stored and / or recorded in memory and / or a database. Therefore, a computer or various other types of computing devices having a processor and memory may be configured to execute method 600.

[0055] As shown with reference to FIG6, method 600 can be used to manufacture and / or produce an integrated circuit (IC) or cause an integrated circuit (IC) to be manufactured and / or produced, the integrated circuit implementing various layout schemes and techniques in the physical design as described herein to provide a voltage-regulated multi-level memory architecture using various related devices, components and / or circuit systems as described herein.

[0056] At block 610, method 600 can provide a first stage having a first memory circuit system having a first signal path and a second signal path. At block 620, method 600 can provide a second stage having a second memory circuit system having a third signal path and a fourth signal path. Furthermore, at block 630, method 600 can couple the first signal path to the third signal path to provide a first continuous signal path between the first stage and the second stage. Further, at block 640, method 600 can couple the second signal path to the fourth signal path to provide a second continuous signal path between the first stage and the second stage, the second continuous signal path replicating the first continuous signal path. In various embodiments, the first and second stages can be formed as a multi-stage memory architecture configured as a three-dimensional (3D) stacked die with voltage regulation at each stage to manage process variations between the multiple stages of the multi-stage memory architecture. Furthermore, in some cases, 3D stacked grains may have a non-synchronous 3D boundary.

[0057] In some embodiments, method 600 may provide a first memory circuit system having a first voltage regulation circuit system, and method 600 may provide a second memory circuit system having a second voltage regulation circuit system coupled to the first voltage regulation circuit system. Furthermore, method 600 may manage process variations between first-stage and second-stage processes by using the first voltage regulation circuit system and the second voltage regulation circuit system.

[0058] In various embodiments, method 600 may couple the first voltage regulation circuit system to the second voltage regulation circuit system via conductive boundary lines to provide voltage regulation at each stage for managing process variations between the first and second stages. Similarly, method 600 may operate the first voltage regulation circuit system together with the second voltage regulation circuit system to provide matched voltages in the first and second stages by using a voltage offset (ΔV) applied to an external voltage supply, thereby balancing process variations and skews attributable to temperature differences in the first and second stages.

[0059] In various embodiments, method 600 may couple the first voltage regulation circuit system to the second voltage regulation circuit system via conductive boundary lines to provide voltage regulation at each stage for managing process variations between the first and second stages. Furthermore, method 600 may operate the first voltage regulation circuit system together with the second voltage regulation circuit system to provide matched voltages in the first and second stages by using a voltage offset (ΔV) applied to an external voltage supply, thereby balancing process variations or skews attributable to temperature differences in the first and second stages.

[0060] The various implementation schemes described herein refer to multilayer voltage regulation schemes and technologies for managing process and / or temperature variations in physical layout design applications. For example, the various implementation schemes described herein relate to a 3D power delivery network (PDN) architecture with a Z-dimensional grid to uniformly supply external Vin / Vdd to one or more or all local voltage regulators. In various cases, one or more layers may have one or more local voltage regulators (LVregs), each LVreg providing distributed voltage regulation on each layer, supplying loads and / or load circuits on each layer. Furthermore, the output voltage of the local regulators may be sensed by a programmable sensor and controller that provides feedback control to each LVreg.

[0061] The advantages of implementing the process variation schemes and technologies described herein may include one or more of the following. For example, layer Vregs with voltage offsets (ΔV) can be used to address process skew on multiple layers attributable to process and ambient temperature variations between multiple layers. Furthermore, in some cases, a Z-dimensional grid can be used to distribute external Vin / Vdd to each layer, and one or more layers can be de-energized separately, where intelligent partitioning designs can operate in low-power mode with only one stage or level. Additionally, in some cases, when non-interactive cells are used on multiple layers, independent DVFSs can be run on those layers, and host voltage control can be used in planer and SOI technologies to independently control PMOS and NMOS process mismatches.

[0062] The scope of the patent application should be intended to be limited to the various embodiments and / or illustrations provided herein, but should include any modified forms of such embodiments, including portions thereof, and combinations of various elements of different embodiments referenced in the patent application. It should also be understood that in the development of any such embodiments, as in any engineering or design project, many embodiment-specific decisions must be made to achieve the developer's specific objectives, such as, for example, compliance with system-related and / or business-related limitations that may vary with the embodiment. Furthermore, it should be understood that such development efforts may be complex and time-consuming, but remain routine in design, production, and manufacturing for those skilled in the art to which this disclosure pertains.

[0063] Detailed references have been provided to various embodiments, examples of which are illustrated in the accompanying drawings. In the following embodiments, numerous specific details are set forth to provide a thorough understanding of the disclosures provided herein. However, the disclosures provided herein can be practiced without these specific details. In the various embodiments, methods, procedures, components, circuits, and networks well-known have not been described in detail to avoid unnecessarily obscuring the details of the embodiments.

[0064] It should also be understood that while terms such as "first" and "second" may be used in this document to describe various elements, these elements should not be limited by these terms. These terms are used only to distinguish between elements. For example, a first element may be called a second element, and similarly, a second element may be called a first element. Furthermore, while both a first element and a second element are elements, they are not considered to be the same element.

[0065] The terminology used in the description of this disclosure provided herein is for the purpose of describing specific embodiments and is not intended to limit the scope of this disclosure. When used in the description of this disclosure and the accompanying claims, the singular forms “a / an” and “the” are intended to include the plural forms as well, unless the context clearly indicates otherwise. As used herein, the term “and / or” refers to and covers any one or more of the associated listed items and all possible combinations thereof. When used in this specification, the terms “include,” “including,” and / or “comprising” specify the presence of the described features, integers, steps, operations, elements, and / or components, but do not exclude the presence or inclusion of one or more other features, integers, steps, operations, elements, components, and / or groups thereof.

[0066] As used in this text, the word "if" can be interpreted, depending on the context, as meaning "when," "upon," "in response to determining," or "in response to detecting." Similarly, the phrases "if it is determine" or "if [a stated condition or event] is detected" can be interpreted, depending on the context, as meaning "upon determining," "in response to determining," "upon detecting [the stated condition or event]," or "in response to detecting [the stated condition or event]." The terms “up” and “down”; “upper” and “lower”; “upwardly” and “downwardly”; “below” and “above”; and various other similar terms indicating relative positions above or below a given point or element may be associated with various embodiments of the various techniques described herein.

[0067] While the foregoing pertains to embodiments of the various technologies described herein, other and further embodiments may be devised based on this disclosure and may be determined by the claims below. Although the subject matter has been described in specific language of structural features and / or methodological actions, it should be understood that the subject matter defined in the appended claims is not necessarily limited to the specific features or actions described above. Rather, the specific features and / or actions described above are disclosed as examples of implementing the claims.

[0068] 100: Picture 104: Architecture / 3D Architecture 118A: First continuous signal path / First 3D connection (3DC) 118B: Second Continuous Signal Path / Second 3D Connection (3DC) 124: External Vin connection / External voltage supply (external Vin) 204A: Two-dimensional (2D) memory architecture / memory architecture 204B: 3D Memory Architecture / Memory Architecture 218A:3DC 218B:3DC 224: Bit unit / logic circuit 224A: Logic Circuit / Bit Unit 224B: Logic Circuits 228: Copy bit unit / logic circuit 228A: Logic Circuits / Replication Bit Unit 234: Decoder and Word Line Driver / Logic Circuit 234A: Logic Circuits / Decoder and Word Line Driver 238: Input / Output (IO) and Control / Logic Circuits 238A: Logic Circuits / I / O and Control 238B: Logic Circuits 244: First signal path (actual path) 248: Second signal path (copy path) 300: Figure 304: Single-Domain Power Delivery Network (PDN) 304A: Single-Domain PDN / Voltage Regulation Circuit System 304B: Single-Domain PDN / Voltage Regulation Circuit System 304C: Single-domain PDN / Voltage Regulation Circuit System 304D: Single-Domain PDN / Voltage Regulation Circuit System 304E: Single-domain PDN / Voltage Regulation Circuit System 304F: Single-domain PDN / Voltage Regulation Circuit System 304G: Single-domain PDN / Voltage Regulation Circuit System 304H: Single-domain PDN / voltage regulation circuit system 304I: Single-Domain PDN / Voltage Regulation Circuit System 310: Local Voltage Regulator Circuit (Vreg) / Local Voltage Regulator (LVreg) / Voltage Control Circuit System 314: Sensing and Control Circuits (S&C) / Program Sensors / Program Sensors and Controllers 318: Load / Load Circuit 320: Conductive boundary line / electric grid / conductive line 400: Figure 404: Multi-Domain Power Delivery Network (PDN) 500: Figure 504: 3D Multi-Domain Power Delivery Network (PDN) 600: Method 610: Square 620: Square 630: Square 640: Square CLK: Clock Input D: Input fb_ctrl: Feedback control voltage / feedback control fb_in: Feedback input voltage Layer_1: First layer Layer_2: Second layer Layer_3: Third layer LG1: Logic Device LG2: Logic Device LG3: Logic Device LG4: Logic Device LVR_1: First voltage regulation circuit system / First local Vreg LVR_2: Second voltage regulation circuit system / Second local Vreg LVreg: Local Voltage Regulator n1: Node pkg_bump_1: Encapsulation bump pkg_bump_2: Encapsulation bump pkg_bump_3: Encapsulation bump pkg_bump_4: Encapsulation bump Q: Output S&C: Sensing and Control Circuits Tier_0: First order Tier_1: Second Tier Vdd: Voltage supply Vdd ± ΔV: Regulates (or adjusts) the voltage supply / voltage regulator output / regulator output voltage

Claims

1. A multi-stage device comprising: a voltage regulation architecture having a multi-layer structure having multiple layers, wherein the multi-layer structure has voltage regulation circuitry for each layer, the voltage regulation circuitry for each layer being configured to manage at least one of process variation and temperature variation among the multiple layers of the multi-layer structure.

2. A multi-stage device comprising: a voltage-regulated architecture having a multi-layer structure having multiple layers, wherein one or more of the multiple layers have a voltage-regulated circuit system configured to manage at least one of process variation and temperature variation between the multiple layers of the multi-layer structure, and wherein the multi-layer structure refers to a three-dimensional (3D) stacked die having voltage regulation at each layer for managing process variation between the multiple layers of the multi-layer structure.

3. A multi-stage device comprising: a voltage regulation architecture having a multi-layer structure having a plurality of layers, wherein one or more of the plurality of layers have a voltage regulation circuit system configured to manage at least one of process variation and temperature variation between the plurality of layers of the multi-layer structure, wherein the voltage regulation circuit system is configured to manage temperature variation between the plurality of layers of the multi-layer structure, and wherein the voltage regulation circuit system of the one or more layers outputs an offset voltage regulator for the one or more layers to balance process variation and skew attributable to temperature difference between the plurality of layers.

4. A multi-stage device comprising: a voltage regulation architecture having a multi-layer structure having multiple layers, wherein one or more of the multiple layers have a voltage regulation circuit system configured to manage at least one of process variation and temperature variation between the multiple layers of the multi-layer structure, wherein the voltage regulation circuit system of the one or more layers includes one or more voltage regulators interconnected by conductive lines, and wherein the one or more voltage regulators of the one or more layers are configured to provide voltage regulation for each layer to manage variation between the multiple layers of the multi-layer structure.

5. The multi-stage device as claimed in claim 4, wherein the one or more voltage regulators of the one or more layers are configured to balance process variations and skews attributable to temperature differences on the multiple layers by using different voltage offsets (ΔV) applied to an external voltage supply.

6. The multi-stage device as claimed in claim 4, wherein the one or more voltage regulators of the one or more layers are configured to balance process variations or skews attributable to temperature differences on the multiple layers by using different voltage offsets (ΔV) applied to the external voltage supply.

7. A multi-stage device as described in claim 4, wherein: These conductive lines are configured to provide an external voltage supply via an external source, which is a conductive package bonding, including connectors, probes, pins, or bumps, and the power is supplied from the external source as input to one or more voltage regulators, and one of the Z-dimensional electrical grids is configured to use conductive lines to connect the external voltage supply to the layers.

8. The multi-stage device of claim 4, wherein the one or more voltage regulators of the one or more layers have a program sensor configured to sense the regulated output voltage from the one or more voltage regulators and provide feedback control to the one or more voltage regulators to track and compensate for local variations and skews in each layer.

9. A multi-stage device comprising: a first stage having a first circuit system having a first signal path and a second signal path; and a second stage having a second circuit system having a third signal path and a fourth signal path, wherein the first signal path is coupled to the third signal path to provide a first continuous signal path between the first stage and the second stage, wherein the second signal path is coupled to the fourth signal path to provide a second continuous signal path between the first stage and the second stage, such that the second continuous signal path replicates the first continuous signal path, and wherein the first circuit system and the second circuit system provide voltage regulation for each stage to manage process variations between the first stage and the second stage.

10. A multi-stage device as described in claim 9, wherein: The first circuit system has a first voltage regulation circuit system, and the second circuit system has a second voltage regulation circuit system, which is coupled to the first voltage regulation circuit system.

11. A multi-stage device as described in claim 10, wherein: The first voltage regulation circuit system and the second voltage regulation circuit system manage the variation and temperature between the first and second stages.

12. A multi-stage device as claimed in claim 11, wherein: The first voltage regulation circuit system is coupled to the second voltage regulation circuit system via conductive lines to provide voltage regulation at each stage, which is used to manage process variations between the first stage and the second stage.

13. A multi-stage device as described in claim 12, wherein: The first voltage regulation circuit system and the second voltage regulation circuit system operate to balance process variations and skews attributable to temperature differences in the first and second stages by using a voltage offset (ΔV) applied to an external voltage supply.

14. A multi-stage device as described in claim 12, wherein: The first voltage regulation circuit system and the second voltage regulation circuit system operate to balance process variations or skews attributable to temperature differences in the first and second stages by using different voltage offsets (ΔV) applied to an external voltage supply.

15. A multi-stage device comprising: a first stage having a first circuit system having a first signal path and a second signal path; and a second stage having a second circuit system having a third signal path and a fourth signal path, wherein the first signal path is coupled to the third signal path to provide a first continuous signal path between the first stage and the second stage, wherein the second signal path is coupled to the fourth signal path to provide a second continuous signal path between the first stage and the second stage, such that the second continuous signal path replicates the first continuous signal path, and wherein the device provides a multi-stage memory architecture, the multi-stage memory architecture referring to a three-dimensional (3D) stacked die having stage voltage regulation for managing process variations between the multiple stages of the multi-stage memory architecture.

16. A method for providing a multi-stage device, comprising: coupling a first voltage regulation circuit system to a second voltage regulation circuit system via conductive lines to provide voltage regulation for each stage to manage variations between a first stage and a second stage; and operating the first voltage regulation circuit system together with the second voltage regulation circuit system to balance at least one of process variations and skews attributable to temperature differences in the first and second stages by using different voltage offsets (ΔV) applied to an external voltage supply.

17. The method of claim 16, further comprising: providing the first stage having a first memory circuit system having a first signal path and a second signal path; and providing the second stage having a second memory circuit system having a third signal path and a fourth signal path.

18. The method of claim 17, further comprising: coupling the first signal path to the third signal path to provide a first continuous signal path between the first stage and the second stage; and coupling the second signal path to the fourth signal path to provide a second continuous signal path between the first stage and the second stage, the second continuous signal path replicating the first continuous signal path.

19. As in request item 18, wherein: The first and second stages are formed into a multi-stage memory architecture, which refers to a three-dimensional (3D) stacked die with voltage regulation at each stage, the voltage regulation at each stage being used to manage process variations between the multiple stages of the multi-stage memory architecture.

20. The method of claim 18, further comprising: providing the first memory circuit system having a first voltage regulation circuit system; providing the second memory circuit system having a second voltage regulation circuit system coupled to the first voltage regulation circuit system; and managing process variations between the first and second stages by using the first and second voltage regulation circuit systems.

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