Susceptor, semiconductor processing system, and film deposition method

Abstract

This disclosure discloses a substrate having a circular pouch portion, an annular crossbar portion, and an annular edge portion. The circular pouch portion is disposed along a rotation axis and has a perforated surface. The annular crossbar portion extends circumferentially around the pouch portion and has a crossbar surface that is axially inclined upwards from the perforated surface. The edge portion extends circumferentially around the crossbar portion and is connected to the pouch portion by the crossbar portion of the substrate. The substrate has one or more of the following: an adjustment pouch, a contact slit, a precursor vent, and a purge channel, disposed radially outside the perforated surface to control the deposition of a film onto a substrate supported by the substrate. This disclosure also discloses a semiconductor processing system, a film deposition method, and a method for fabricating a substrate.

Description

[Technical Field]

[0001] This disclosure generally relates to depositing a film onto a substrate using a semiconductor processing system. More specifically, this disclosure relates to controlling the properties of a film deposited onto a substrate using a semiconductor processing system. [Previous Technology]

[0002] Films are typically deposited on a substrate to manufacture semiconductor devices, such as using epitaxial techniques in a chemical vapor deposition (CVD) process. The deposition of such films generally involves supporting the substrate within the process equipment, typically on a substrate support structure. The process equipment maintains the substrate and its support structure in an environment suitable for film deposition, during which a precursor gas system flows through the process equipment and across the substrate. As the precursor gas flows across the substrate, the film gradually grows on the substrate. Once the film has fully grown, the flow of the precursor gas stops, and the substrate is subsequently removed from the process equipment.

[0003] In some process equipment, the film deposited on the substrate may be thickened or thinned at the edge of the substrate relative to the interior of the substrate surface. Bridging may also be formed between the substrate and the substrate support structure, for example, between the bottom surface of the substrate and the substrate support structure, and / or between the edge of the substrate and the substrate support structure. While generally acceptable for its intended use, thickening and / or thinning of the film at the substrate edge may alter the electrical properties of the film relative to the film in the interior region of the substrate, potentially making the reliability of semiconductor devices located near the edge lower than that of other semiconductor devices located in the interior region of the substrate. Furthermore, bridging (once formed) can mechanically fix the substrate to the substrate support structure, potentially causing substrate damage upon removal from the substrate support structure and / or during subsequent processing of the substrate. The risk of substrate damage may be relatively high in deposition techniques used to deposit relatively thick films, such as in semiconductor devices used in power electronics.

[0004] Various countermeasures exist to control film thickening and / or thinning at substrate edges, and bridging between the substrate and substrate support structure. For example, edge thickness can be controlled by rotating the substrate during film growth on its surface. Bridging can be controlled using multi-pass deposition techniques, where two or more deposition operations are used to deposit the film. In these techniques, the substrate is typically removed from the substrate support structure between these deposition operations to break any bridging that may have formed between the substrate and the substrate support structure. The substrate is then returned to the substrate support structure for subsequent deposition operations. This allows any bridging that may have formed between the substrate and the substrate to be broken while remaining relatively thin, thereby limiting the risk of substrate damage by limiting the force applied to the substrate to break the bridging. In some deposition operations, reducing the risk of substrate damage is sufficient to offset the reduction in throughput associated with unloading operations.

[0005] Such systems and methods are generally considered suitable for their intended use. However, improvements are still needed in the substrates, semiconductor processing systems, and film deposition methods within this technology. This disclosure provides solutions to one or more of these needs. [Summary of the Invention]

[0006] This disclosure provides a base. The base has a circular pouch portion disposed along a rotation axis and having a perforated surface; an annular ledge portion extending circumferentially around the pouch portion and having a ledge surface that slopes upwards from the perforated surface along the rotation axis; and an annular edge portion extending circumferentially around the ledge portion, wherein the ledge portion of the base is connected to the pouch portion, and has an edge surface that is axially offset from the ledge surface of the base. The edge portion and the ledge surface of the base define an adjustment pouch therebetween to adjust the edge thickness profile of a film deposited on a substrate supported on the ledge surface of the base.

[0007] In some instances, this adjustment bag may define a flattening pocket depth, which is selected to flatten the film thickness of the radially inner side of the periphery of the substrate relative to the radially inner region of the substrate.

[0008] In some instances, the depth of this flattened bag may be greater than the depth of an upper roll-up pocket. The depth of this flattened bag may be less than the depth of a lower roll-down pocket.

[0009] In some embodiments, a substrate may be supported on the cross surface of the cross section of the base. The flattened bag depth may be selected such that the top side of the substrate is axially disposed between the edge surface of the edge section of the base and the perforated surface of the bag section of the base.

[0010] In some instances, this adjustment bag may define an up-wrap bag depth, which is configured to increase the film thickness deposited on the radially inner side of the substrate relative to the radially inner region of the substrate.

[0011] In some instances, the depth of this upper roll bag may be less than the depth of a flattened bag. The depth of this upper roll bag may be less than the depth of a lower roll flattened bag.

[0012] In some instances, a substrate may be supported by the cross face of the base. The depth of this flattening bag may be selected, and one top side of the substrate is substantially coplanar with the edge face of the edge portion of the base along the axis of rotation.

[0013] In some instances, this adjustment bag may define a roll depth, which is configured to reduce the film thickness deposited on the radially inner side of the substrate relative to the radially inner region of the substrate.

[0014] In some instances, the depth of this lower roll bag may be greater than the depth of an upper roll bag. The depth of this lower roll bag may be greater than the depth of a flattened bag.

[0015] In some embodiments, a substrate may be supported on the cross surface of the cross section of the base. The depth of the lower roll bag may be selected such that one top side of the substrate is axially disposed between the edge surface of the edge section of the base and the perforated surface of the bag section of the base.

[0016] In some instances, the base may be formed of graphite. This graphite may be encapsulated with a silicon carbide coating.

[0017] In some instances, the base may have: (a) a contact slit located on the cross face of the base to restrict contact between the substrate and the cross face of the base; (b) an array of purge channels located on the cross face of the base to allow a purge gas to flow between the periphery of the substrate and the cross face of the base; and (c) an array of precursor vent holes located radially outward of the perforated surface to discharge the precursor through a gap defined between the edge of the substrate and the base.

[0018] This disclosure provides a semiconductor processing system. The semiconductor processing system includes a reactor having: a hollow interior; a partition housed within the reactor and having a partition orifice, the partition dividing the interior of the reactor into an upper chamber and a lower chamber; and a base as described above. The base is disposed within the reactor and supported for rotation about a rotation axis extending through the partition orifice; a purge source is connected to the reactor and configured to allow a purge gas to flow through the lower chamber of the reactor; and a precursor source is connected to the reactor and configured to allow a precursor to flow through the upper chamber of the reactor.

[0019] This disclosure provides a film deposition method. The method includes, on a substrate as described above: supporting a substrate on a cross surface of a base, the substrate having a top side and a bottom side axially separated from each other by a periphery of the substrate; allowing a purge gas to flow through a perforated surface and into a purged volume defined between the bottom side of the substrate and the perforated surface of the base; and allowing a precursor to flow through the top side of the substrate; using the precursor to deposit a film onto the top side of the substrate; and adjusting the edge thickness of the film using an adjustment pocket defined by the base.

[0020] In some instances, the conditioning bag may be a flattened bag depth, and the method further includes homogenizing the precursor concentration in this gap relative to the precursor in one of the radially inner regions of this substrate.

[0021] In some instances, the adjustment bag may be an up-wound bag depth, and the method further includes increasing the precursor concentration in this gap relative to the precursor in one of the radially inner regions of this substrate.

[0022] In some instances, the adjustment bag may be a roll bag depth, and the method further includes reducing the precursor concentration in this gap relative to the precursor in one of the radially inner regions of this substrate.

[0023] In some instances, this method may include using a contact crack located on the cross face of the base to limit the contact between the substrate and the cross face of the base.

[0024] In some instances, this method may include using an array of purge channels located on the cross face of the base to allow a purge gas to flow between the periphery of the substrate and the cross face of the base.

[0025] In some instances, the method may include using an array of precursor vent holes located radially outward of the perforated surface of the base to discharge the precursor from a gap defined between a periphery of the substrate and an edge of the base.

[0026] This disclosure provides a base. The base has: a circular pouch portion disposed along a rotation axis and having a perforated surface; an annular crossbar portion extending circumferentially around the pouch portion and having a crossbar surface that slopes upwards from the perforated surface along the rotation axis; and an annular edge portion extending circumferentially around the crossbar portion, wherein the crossbar portion of the base is connected to the pouch portion, and having an edge surface that is axially offset from the crossbar surface of the base. The crossbar surface has a contact crack extending radially between the perforated surface and the edge surface to discontinuously support a substrate on the crossbar surface of the base.

[0027] In some instances, the contact crack may extend continuously centered on the bag portion of the base.

[0028] In some instances, this contact crack may extend radially outward from the perforated surface of the base.

[0029] In some instances, this contact crack may extend radially inward from the radial inner periphery of one of the bases.

[0030] In some instances, this contact crack may include an unpolished area of ​​the cross face of the base.

[0031] In some instances, this contact crack may include a portion of the abrasive area of ​​the cross face of the base.

[0032] In some instances, this contact crack may fluidly connect the perforated surface of the base to the edge surface of the base.

[0033] In some instances, this contact crack may include a roughened region of the cross face of the base.

[0034] In some instances, the contact crack may include (a) an unpolished area, (b) a portion of a polished area, or (c) a roughened area located on the cross surface of the base, and the area having a roughness between about 0.2 micrometers and about 5.0 micrometers.

[0035] In some instances, this contact crack may include a purge slot defined in the cross face of the base.

[0036] In some instances, the contact crack may include a grid structure having two or more teeth distributed radially along the crossbar and circumferentially centered on the bag portion of the base.

[0037] In some instances, the contact crack may include (a) an unpolished area, (b) a portion of a polished area, (c) a roughened area, (d) a purge channel, or (e) a mesh structure, located on the cross face of the base. A substrate and its periphery may cover the contact crack, and the substrate may be discontinuously supported by the contact crack.

[0038] In some instances, the substrate may be formed of graphite. The substrate may have a coating. The coating may encapsulate the substrate. The coating may be a silicon carbide coating.

[0039] In some instances, the base may have at least one of the following: (a) an adjustment bag defined between the edge surface of the base and a support circumference extending along the cross face and surrounding the perforated surface of the base; (b) an array of purge channels located on the cross face of the base to allow a purge gas to flow between the periphery of the substrate and the cross face of the base; and (c) an array of precursor exhaust holes located radially outward of the perforated surface to discharge the precursor through a gap defined between the substrate and the edge of the base.

[0040] This disclosure provides a semiconductor processing system. The semiconductor processing system includes: a reactor having a hollow interior; a partition housed within the reactor and having a partition orifice, the partition dividing the interior of the reactor into an upper chamber and a lower chamber; and a base as described above. The base is disposed within the reactor and supported for rotation about a rotation axis extending through the partition orifice. A purge source is connected to the reactor and configured to allow a purge gas to flow through the lower chamber of the reactor; a precursor source is connected to the reactor and configured to allow a precursor to flow through the upper chamber of the reactor; and a contact slit fluidly connects the purge source and the upper chamber of the reactor through the lower chamber of the reactor and the perforated surface of the base.

[0041] This disclosure provides a film deposition method. The method includes: discontinuously supporting a substrate on a cross surface of the substrate, the substrate having a top side and a bottom side axially separated from each other by a periphery of the substrate; allowing a purge gas to flow through a perforated surface and into a purge volume defined between the bottom side of the substrate and the perforated surface of the substrate; and allowing a precursor gas to flow through the top side of the substrate. A film is deposited onto the top side of the substrate using the precursor gas, and the purge gas flows between the periphery of the substrate and the cross surface of the substrate via a contact crack located on the cross surface of the substrate.

[0042] This disclosure provides a method for manufacturing a base. The method includes defining a base having: a circular pouch portion disposed along a rotation axis and having a perforated surface; an annular crossbar portion extending circumferentially around the pouch portion and having a crossbar surface inclined upwards along the rotation axis from the perforated surface; and an annular edge portion extending circumferentially around the crossbar portion, wherein the crossbar portion of the base is connected to the pouch portion, and having an edge surface axially offset from the crossbar surface of the base. Under a substrate not supported by the base, a region of the crossbar surface is roughened by cyclically etching and depositing a film onto the crossbar surface of the base.

[0043] In some instances, the method may include cyclically etching and depositing a film onto the cross face of the substrate, including cyclically: (a) etching the cross face with a mixture of hydrochloric acid (HCl) and hydrogen (H2); and (b) depositing a silicon layer onto the cross face.

[0044] In some instances, the cyclic etching and deposition of the film onto the cross face of the substrate includes a total of: (a) etching the cross face for more than 1,000 minutes; and (b) depositing a film of more than 4,000 micrometers onto the cross face.

[0045] In some instances, this method may further include depositing a silicon-containing pre-coating onto the crossbar surface, the crossbar surface having a thickness between about 1 micrometer and about 3 micrometers.

[0046] This disclosure provides a base. The base has a circular pouch portion disposed along a rotation axis and having a perforated surface; an annular crossbar portion extending circumferentially around the pouch portion and having a crossbar surface that is axially inclined upwards from the perforated surface; and an annular edge portion extending circumferentially around the crossbar portion and connected to the pouch portion by the crossbar portion of the base. A precursor vent hole having a precursor vent inlet extends through the base, the precursor vent inlet being located radially outward of the perforated surface to discharge the precursor through a gap defined between the periphery of a substrate supported by the crossbar surface of the base and the edge portion of the base.

[0047] In some instances, the precursor vent can be a first precursor vent, and the precursor vent inlet can be a first precursor vent inlet, and the base can have one or more second precursor vents having a second precursor vent inlet. The second precursor vent inlet can be located radially outward from the perforated surface and circumferentially offset from the first precursor vent inlet with the bag portion of the base as the center.

[0048] In some instances, the preceding exhaust port may extend radially outward from the preceding exhaust inlet to a preceding exhaust outlet, the preceding exhaust outlet may be fluidly connected to the preceding exhaust inlet via the preceding exhaust port, and the preceding exhaust outlet may be located on one of the radially outer peripheries of the base.

[0049] In some instances, the exhaust outlet of the previous drive can be axially disposed on one side of this crossbar, facing away from the perforated surface of this base.

[0050] In some instances, the exhaust outlet of the previous drive can be axially disposed between the cross face and the perforated face of the base.

[0051] In some instances, the previous drive exhaust port may extend axially from the previous drive exhaust inlet and toward the bottom surface of the base.

[0052] In some instances, the preceding drive exhaust port may have a preceding drive exhaust outlet. The preceding drive exhaust outlet may be fluidly connected to the preceding drive exhaust inlet via the preceding drive exhaust port, and the preceding drive exhaust outlet may be located on the bottom surface of this base.

[0053] In some instances, the exhaust inlet for the previous drive may be located on the radial inner circumference of one of the bases.

[0054] In some instances, the preceding vent hole may have a preceding vent outlet. The preceding vent outlet may be fluidly connected to the preceding vent inlet via the preceding vent hole, and the preceding vent outlet may be located on one of the radially outer peripheries of the base.

[0055] In some instances, the exhaust inlet for the previous drive vehicle may be located on the crossbeam of this base.

[0056] In some instances, the base may have a purge channel extending therethrough, the purge channel having a purge channel outlet. The purge channel outlet may be radially disposed between the perforated surface of the base and the prior material exhaust inlet.

[0057] In some embodiments, a base having a periphery may be supported on the crossbeam of the base. The base plate may axially cover the purge channel outlet, and the periphery of the base plate may radially separate the purge channel outlet from the preceding material exhaust inlet.

[0058] In some embodiments, the crossbar may have a contact crack radially located between the preceding material exhaust inlet and the purge channel outlet. The crossbar may be configured such that the periphery of the substrate radially separates the purge gas outlet from the preceding material exhaust inlet.

[0059] In some instances, the crossbar may have a contact crack that is radially disposed between the former exhaust inlet and the perforated surface of the substrate.

[0060] In some instances, this contact crack may include a grid structure defined by the cross face of the base.

[0061] In some instances, the contact crack may include an unpolished area on the crossbeam of the base. The unpolished area may have a roughness between about 0.2 micrometers and about 5 micrometers.

[0062] In some instances, the contact crack may include a portion of a polished area located on the crossbeam surface of the base. This portion of the polished area may have a roughness between about 0.2 micrometers and about 5 micrometers.

[0063] In some instances, the contact crack may include a roughened region located on the crossbeam surface of the base. The roughened region may have a roughness between about 0.2 micrometers and about 5 micrometers.

[0064] This disclosure provides a semiconductor processing system. The semiconductor processing system includes: a reactor having a hollow interior; a partition housed within the reactor and having a partition hole, the partition dividing the interior of the reactor into an upper chamber and a lower chamber; and a base as described above. The base is disposed within the reactor and supported for rotation about a rotation axis extending through the partition hole; a purge source is connected to the reactor and configured to allow a purge gas to flow through the lower chamber of the reactor; and a precursor source is connected to the reactor and configured to allow a precursor to flow through the upper chamber of the reactor. The precursor exhaust inlet is located in the upper chamber of the reactor to discharge the precursor from a gap defined between an edge of the base and the periphery of a substrate supported by a crossbeam of the base.

[0065] This disclosure provides a film deposition method. The film deposition method includes: supporting a substrate on a substrate as described above, the substrate having a top side and a bottom side axially separated from each other by a periphery of the substrate; allowing a purge gas to flow through a perforated surface and into a purge volume defined between the bottom side of the substrate and the perforated surface of the substrate; and allowing a precursor to flow through the top side of the substrate. A film is deposited onto the top side of the substrate using the precursor, and the precursor is discharged from a gap defined between the periphery of the substrate and an edge of the substrate. Optionally, the purge gas flows from the purge volume along a crossbeam of the substrate and between the periphery of the substrate and the crossbeam of the substrate to a precursor exhaust inlet.

[0066] This disclosure provides a base. The base includes: a circular pouch portion disposed along a rotation axis and having a perforated surface; an annular crossbar portion extending circumferentially around the pouch portion and having a crossbar surface inclined upwards along the rotation axis from the perforated surface; and an annular edge portion extending circumferentially around the crossbar portion. This edge portion is connected to the pouch portion by the crossbar portion of the base and has an edge surface axially offset from the crossbar surface of the base. The crossbar portion has a purge channel extending through it to deliver a purge gas to the underside of a substrate supported on the crossbar surface of the base.

[0067] In some instances, this purge channel is one of a plurality of purge channels, which are circumferentially distributed around the perforated surface of the base.

[0068] In some instances, this purge channel may have a purge channel outlet. This purge channel outlet may be located on the crossbeam of the base.

[0069] In some instances, the crossbar may have a support circumference extending from the perforated surface of the base. The purge channel outlet may be radially positioned between the perforated surface of the base and the support circumference.

[0070] In some instances, a substrate having a periphery can be supported by the crossbar of the base, and the purge channel outlet can be radially disposed between the periphery of the substrate and the perforated surface of the base.

[0071] In some instances, the purging channel may have a purging channel inlet located on the bottom surface of the base.

[0072] In some instances, this purge channel may connect the purge channel inlet to one of the purge channel outlets located on the crossbeam of this base.

[0073] In some instances, the purge channel may extend axially between the purge channel inlet and the cross face of the base.

[0074] In some embodiments, the crossbar surface may have a contact crack that is radially disposed between the edge of the base and the perforated surface. This contact crack provides fluid connection between the purge channel and the edge of the base.

[0075] In some instances, the contact crack includes one of the following: (a) an unpolished area; (b) a portion of a polished area; and (c) a roughened area to connect the purging channel fluid to the edge of the base.

[0076] In some instances, the contact crack may include one of the following: (a) a purge slit and (b) a mesh structure to fluidly connect the purge channel to the edge of the base.

[0077] In some instances, a substrate having a periphery may be discontinuously supported on a base through this contact crack, which may be axially disposed between the periphery of the substrate and the crossbar of the base.

[0078] In some embodiments, the crossbar may have a contact crack located on the crossbar surface of the base and radially between the edge of the base and the perforated surface. This contact crack can fluidly separate the purge channel from the edge of the base.

[0079] In some instances, the base may have a precursor vent located radially outward of the perforated surface of the base. This precursor vent may be fluidly connected to this purge channel.

[0080] In some instances, this purging channel may be located radially inside the exhaust port of the preceding material.

[0081] In some instances, the crossbar may have a contact crack radially disposed between the perforated surface of the base and the edge portion. This contact crack allows the purge channel to be fluidly connected to the previously driven material exhaust port.

[0082] In some instances, a substrate having a periphery can be supported on the crossbar of the base, and the periphery of the substrate can be radially disposed between the purge channel and the exhaust port of the preceding material.

[0083] This disclosure provides a semiconductor processing system. The semiconductor processing system includes: a reactor having a hollow interior; a partition housed within the reactor and having a partition orifice dividing the interior of the reactor into an upper chamber and a lower chamber; and a base as described above. The base is disposed within the reactor and supported for rotation about a rotation axis extending through the partition orifice. A purge source is connected to the reactor and configured to allow a purge gas to flow through the lower chamber of the reactor. A precursor source is connected to the reactor and configured to allow a precursor to flow through the upper chamber of the reactor. The purge source fluidly connects to the upper chamber of the reactor via the base and the lower chamber of the reactor.

[0084] This disclosure provides a film deposition method. The method includes, on a substrate as described above: supporting a substrate on a cross surface of a base, the substrate having a top side and a bottom side axially separated from each other by a periphery of the substrate; allowing a purge gas to flow through a perforated surface and into a purge volume defined between the bottom side of the substrate and the perforated surface of the base; and allowing a precursor gas to flow through the top side of the substrate. A film is deposited onto the top side of the substrate using the precursor gas; and purge gas is emitted to the bottom side of the substrate at a radial position between the perforated surface of the base and the periphery of the substrate.

[0085] This disclosure provides a method for manufacturing a base. The method includes defining a base having: a circular bag portion having a perforated surface; an annular crossbar portion extending centrally from the bag portion and having a crossbar surface axially upwardly inclined from the perforated surface; and an annular edge portion connected to the bag portion via the crossbar portion and having an edge surface. An adjustment bag is axially defined between the edge surface and the crossbar surface of the base. A precursor vent is defined in the base and has a precursor vent inlet located radially outward of the perforated surface of the base. A contact slit is defined on the crossbar surface of the base at a position radially between the perforated surface and the edge surface of the base. A purge channel is defined in the base and has a purge channel inlet located on the crossbar surface of the base.

[0086] In some instances, this base may be formed of graphite.

[0087] In some instances, the base may include a coating. The coating may encapsulate the base. The coating may be a silicon carbide coating.

[0088] In some instances, this coating may be a first coating, and a second coating may cover the first coating. The second coating may radially extend across the crossbeam of the base. The second coating may extend circumferentially with the crossbeam as the center.

[0089] In some instances, this second coating may include silicon.

[0090] In some instances, this second coating may have a thickness between about 1 micrometer and about 3 micrometers.

[0091] In some instances, this method may include modulating the crossbar by cyclically: (a) etching the crossbar and (b) depositing a silicon coating onto the crossbar of the substrate, for a predetermined number of coating / etching cycles. Etching may be performed using hydrochloric acid (HCl) or a mixture of hydrochloric acid (HCl) and hydrogen (H2) gas. Each etching cycle may last approximately 2 minutes. Coating may be performed at a temperature between approximately 1000 degrees Celsius and approximately 1250 degrees Celsius. Coating may be performed at a temperature of approximately 1160 degrees Celsius. Each coating cycle may include depositing a silicon layer having a thickness of approximately 1 micrometer. The predetermined number of coating / etching cycles may be between approximately 400 and approximately 600 cycles. The predetermined number of coating / etching cycles may be approximately 500 cycles.

[0092] This disclosure is intended to present a selection of concepts in a simplified form. These concepts will be described in more detail in the embodiments disclosed below. This disclosure is not intended to identify the essential or necessary features of the claimed substance, nor is it intended to limit the scope of the claimed substance.

Implementation Method

[0095] The figures will now be labeled, with similar reference numerals representing similar structural features or configurations of this disclosure. For purposes of explanation and illustration, and not for limitation, Figure 1 is a partial view showing an example of a substrate according to this disclosure, and is generally indicated by reference numeral 100. Figures 2 through 18E provide other embodiments of the substrate, semiconductor processing system, and film deposition method according to this disclosure or its configurations, as detailed below. The substrate, semiconductor processing system, and film deposition method described herein can be used to deposit films on substrates during the manufacture of semiconductor devices (e.g., very large-scale integration circuits), such as using epitaxial deposition techniques in atmospheric pressure chemical vapor deposition (CVD) systems. However, this disclosure is not limited to chemical vapor deposition semiconductor processing systems, epitaxial deposition techniques, or (generally) the manufacture of any particular type of semiconductor device.

[0096] Referring to Figure 1, a semiconductor processing system 10 is shown. This semiconductor processing system 10 is configured to deposit a film on a substrate (e.g., depositing a film 12 on a substrate 14), and includes in this respect a reactor 16, a separator 18, and a spider 20. This semiconductor processing system 10 also includes a shaft 22, a drive module 24, and a gate valve 26. This semiconductor processing system 10 further includes a substrate processor 28, a first precursor source 30, a second precursor source 34, and a purge source 32. Although a particular type of semiconductor processing system, such as a single-wafer atmospheric pressure chemical vapor deposition semiconductor processing system used to deposit thick films using epitaxial deposition technology, is shown and described herein for the purpose of illustrating certain features of this disclosure, it should be understood and appreciated that other types of semiconductor processing systems (e.g., atomic layer deposition semiconductor processing systems) may also benefit from this disclosure.

[0097] The reactor 16 has a wall 36 that surrounds a hollow interior 38 of the reactor 16. A partition 18 is fixed to the interior 38 of the reactor 16 and divides the interior 38 into an upper chamber 40 and a lower chamber 42, and has a partition orifice 44. The partition orifice 44 is configured to receive the base 100 therein and fluidly connects the lower chamber 42 of the reactor 16 to the upper chamber 40 of the reactor 16. A gate valve 26 is connected to the reactor 16 and configured to provide access to and from the interior 38 of the reactor 16 from the external environment. A substrate handler 28 is located outside the reactor 16, connected to the gate valve 26, and configured to position and retrieve a substrate, such as the substrate 14 from the interior 38 of the reactor 16. In some embodiments, the reactor 16 may be formed of a light-transmitting material (e.g., quartz), as a non-limiting example. In some instances, the substrate processor 28 may include a wafer processing module. It is also conceivable that in some instances, one or more lamps or lamp arrays 46 may be disposed outside the reactor 16 to transfer heat energy to the interior 38 of the reactor 16.

[0098] The base 100 is supported within the interior 38 of the reactor 16 to rotate about a rotation axis 48 and is positioned along this rotation axis 48. This rotation axis 48 then extends through the hollow interior 38 of the reactor 16, i.e., through the lower chamber 42, through the partition hole 44, and into the upper chamber 40 of the reactor 16. The base 100 is mounted on the spider frame 20 and is rotatably fixed relative to the spider frame 20 to rotate with it about the rotation axis 48 relative to the reactor 16. The spider frame 20 is then positioned along the rotation axis 48 and connected to the shaft portion 22, and is rotatably fixed relative to the shaft portion 22. The shaft portion 22 is positioned along the rotation axis 48 and operatively connects the drive module 24 to the spider frame 20 and the base 100, and is connected to the base 100 via the spider frame 20 to allow the base 100 to rotate about the rotation axis 48.

[0099] The precursor source 30 is connected to the reactor 16 and configured to allow a precursor 50 to flow through the upper chamber 40 of the reactor 16. In some instances, the precursor may include a reactive material, such as a reactive material (e.g., a reactant) suitable for an epitaxial or atomic layer deposition operation. According to some instances, the precursor 50 may include a silicon-containing precursor, for example, used in an epitaxial film deposition operation. This silicon-containing precursor may include monosilane (SiH4), dichlorosilane (SiH2Cl2), and / or trichlorosilane (HCl3Si), as non-limiting examples.

[0100] This purge source 32 is connected to the reactor 16 and is configured to allow a purge gas 54 to flow through the lower chamber 42 of the reactor 16. This purge gas may be selected to prevent film deposition onto the surfaces contacted by the purge gas 54. In some instances, the purge gas 54 may include hydrogen (H2), hydrochloric acid (HCl), or a mixture of hydrochloric acid (HCl) and hydrogen (H2).

[0101] In some instances, the precursor source 30 may be one of a plurality of precursor sources. In this regard, and as shown in Figure 1, the precursor source 30 is a first precursor source 30, and the semiconductor processing system 10 includes a second precursor source 34. This second precursor source 32 is connected to the reactor 16 and is configured to allow a second precursor 52 to flow through the upper chamber 40 of the reactor 16. In some instances, the second precursor 52 may flow sequentially through the upper chamber 40 of the reactor 16 with the first precursor 50 (e.g., a first precursor gas), for example during an epitaxial or atomic layer deposition operation. According to some instances, the second precursor 52 (e.g., a second precursor gas) may be mixed with the first precursor 50 to flow synchronously through the upper chamber 40 of the reactor 16, for example during a chemical vapor deposition and / or an epitaxial deposition operation. It is also conceivable that this second precursor 52 may include a dopant. For example, the first precursor may include a dopant and hydrogen, while the second precursor may include a silicon source and a dopant (or this dopant) and hydrogen. Examples of suitable dopants include band gap-engineering dopants, such as germanium (Ge), n-type dopants (e.g., boron (B)), and p-type dopants (e.g., arsenic (As)).

[0102] The substrate 14 is supported by the base 100 along the rotation axis 48 and has a top side 56, a bottom side 58, and a periphery 60. The top side 56 and bottom side 58 of the substrate 14 are axially separated from each other along the rotation axis 48 and connected to each other via the periphery 60 of the substrate 14. The periphery 60 of the substrate 14 thus extends around the rotation axis 48 and connects the top side 56 of the substrate 14 to the bottom side 58. In some embodiments, the substrate 14 may include a silicon wafer, such as a 300 mm wafer having a thickness of about 750 micrometers, and the periphery 60 includes a cavity or a bevel. According to some embodiments, the periphery 60 of the substrate 14 may be in close mechanical contact with the base 100. In this type of example, during the deposition of the film 12 onto the top side 56 of the substrate 14, the periphery 60 of the substrate 14 is directly supported against the surface of the base 100; during the deposition of the film 12 onto the top side 56 of the substrate 14, the bottom side 58 of the substrate 14 can be separated from the base 100; and during the deposition of the film 12 onto the top side 56 of the substrate 14, the substrate 14 can be supported by the base 100 through the periphery 60 of the substrate 14.

[0103] As mentioned above, the film thickness may differ at the edge of the substrate relative to the interior region of the substrate. For example, an upper edge thickness profile (e.g., upper edge thickness profile C, shown in Figure 3B) or a lower edge thickness profile (e.g., lower edge thickness profile D, shown in Figure 3C) may be grown in the film 12 deposited on the top side 56 of the substrate 14. During the deposition of the film 12 onto the top side 56 of the substrate 14, a bridging may be formed between the substrate and the substrate support structure supporting the substrate, such as a bottom bridging 62 and / or an edge bridging 64. To control one (or both) of the edge roll-up, edge roll-down, and / or bridging between the substrate 14 and the base 100, the base 100 includes an adjustment bag 102, a contact slit 104, a precursor vent array 106, and / or a purge channel array 108.

[0104] Referring to Figure 2, the base 100 is shown in perspective. The base 100 has a pocket portion 110, a crossbar portion 112, and a side edge portion 114. The pocket portion 110 is circular, arranged along the axis of rotation 48, and has a perforated surface 116. The crossbar portion 112 is annular, extending circumferentially from the pocket portion 110, and has a crossbar surface 118 that is axially inclined upward in a radially outward direction from the perforated surface 116. The side edge portion 114 is annular, extending circumferentially from the crossbar portion 112 of the base 100, has a side edge surface 120, and is connected to the pocket portion 110 via the crossbar portion 112 of the base 100.

[0105] This edge surface 120 extends radially between a radially inner periphery 124 and a radially outer periphery 126 of the base 100. This edge surface 120 is further axially located on one side of the crossbar surface 118 and axially opposite the perforated surface 116 of the base 100. This bag portion 110 has a plurality of axially extending holes 122 (shown in Figure 3) passing through it, and is recessed relative to the crossbar portion 112 of the base 100. It is conceivable that each of these plurality of holes 122 fluidly connects the bottom surface 128 of the base 100 (shown in Figure 3A) and the perforated surface 116 of the base 100. As those skilled in the art will understand from this disclosure, fluid connection between the bottom surface 128 of the base 100 and the perforated surface 116 of the base 100 will fluidly connect the lower chamber 42 of the reactor 16 (shown in Figure 1) to a purge volume 130 (shown in Figure 3A) defined between the perforated surface 116 and the substrate 14. In some embodiments, the base 100 may be formed of graphite 132. According to some embodiments, the base 100 may have a silicon-containing pre-coating 134.

[0106] It is conceivable that this silicon-containing pre-coating 134 can cover one of the graphite materials forming this substrate 100. It is also conceivable that this silicon-containing pre-coating 134 can cover one of the silicon carbide 180 (shown in Figure 2) coatings encapsulating this substrate 100. This silicon-containing pre-coating 134 can have a thickness between about 1 micrometer and about 3 micrometers.

[0107] Referring to Figures 3A to 3C, an example of the base 100 is shown to include the adjusting bag 102. The adjusting bag 102 is defined between the edge surface 120 of the base 100 and the cross surface 118 of the base 100. More specifically, the adjusting bag 102 is defined between the edge surface 120 and a support circumference 136 disposed along the cross surface 118, and is radially offset from the rotation axis 48 by approximately half the diameter of the base plate 14. Specifically, the adjusting bag 102 may be one of a flattened bag depth 138, an up-rolled bag depth 142 (shown in Figure 3B), and a down-rolled bag depth 140 (shown in Figure 3C). In some embodiments, the support circumference 136 may extend circumferentially around the rotation axis 148. According to some embodiments, the support circumference 136 may have a diameter between approximately 290 mm and approximately 298 mm. Although this document is described in the context of 300 mm substrates, it should be understood and appreciated that substrates with diameters less than 300 mm (e.g., 200 mm substrates) and substrates with diameters greater than 300 mm (e.g., 450 mm substrates) can also benefit from this disclosure and still fall within the scope of this disclosure.

[0108] As shown in Figure 3A, in some embodiments, the base 100 may define the flattening pocket depth 138. In this respect, the edge surface 120 may be axially offset from the support perimeter 136 to homogenize the precursor concentration in the gap 66 compared to the precursor concentration at the radially inner position of the substrate 14. Homogenizing the precursor in the gap 66 will more closely match the rate at which the film 12 is deposited at the radially outer edge of the substrate 14 compared to the radially inner position of the substrate 14, thereby flattening the edge profile of the film 12 during its deposition on the substrate 14 and giving the film 12 a flattened edge thickness profile B, compared to otherwise giving the film 12 a nominal edge thickness profile A.

[0109] In some instances, for a given deposition process, the flattening bag depth 138 may be greater than the roll-up bag depth 142 (shown in Figure 3B). According to some instances, for a given deposition process, the flattening bag depth 138 may be less than (shallower than) the roll-down bag depth 140 (shown in Figure 3C). In some instances, the flattening bag depth 138 may be between about 0.4 mm and about 1.3 mm, or between about 0.6 mm and about 1.09 mm, or even between about 0.8 mm and about 1.09 mm. For example, the flattening bag depth may be about 0.8 mm or about 1.09 mm. Without being limited to a particular theory or operating mode, it is generally believed that bag depths falling within these ranges can compensate for other factors causing edge thickness variations by creating flow conditions at the wafer edge, thereby limiting variations in edge thickness in relatively thick silicon-containing epitaxial films (e.g., having an average thickness between about 40 micrometers and 100 micrometers). As those skilled in the art will understand from this disclosure, limiting (or eliminating) edge roll-up can limit the possibility that semiconductor devices formed around the substrate (e.g., edge dies adjacent to the wafer ramp) have similar (or substantially equivalent) electrical characteristics to those formed in radially inward locations, thereby improving device manufacturing yield.

[0110] It is also conceivable that, according to certain examples, the flattened bag depth 138 can be selected such that the top side 56 of the substrate 14 is supported by the cross surface 118, and when supported by the cross surface 118 of the cross portion 112 of the base 100, it is axially arranged along the rotation axis 48 between the edge surface 120 of the edge portion 114 of the base 100 and the perforated surface 116 of the bag portion 110 of the base.

[0111] As shown in Figure 3B, according to certain embodiments, the base 100 may define the roll-up bag depth 142. In such embodiments, the edge surface 120 may be axially offset from the support perimeter 136 to increase the precursor concentration in the gap 66, relative to the recycling induced by the flattened bag depth 138 (shown in Figure 13, Figure 8). The increased precursor concentration in the gap 66 increases the deposition rate at the radially outer edge of the substrate 14 relative to the radially inner edge of the substrate, thereby thickening the film 12 at the radially outer edge of the substrate 14. During the deposition of the film 12 onto the substrate 14, the thickening of the film 12 at the radially outer edge of the substrate 14 further imparts to the film 12 a roll-up edge thickness profile C, relative to a nominal edge thickness profile A otherwise imparted to the film 12.

[0112] In some instances, for this given deposition process, the roll-up bag depth 142 may be less than (shallower than) the flattening bag depth 138 (shown in Figure 3A). According to some instances, for this given deposition process, the roll-up bag depth 142 may also be less than (shallower than) the roll-up bag depth 140 (shown in Figure 3C). It is conceivable that in some instances, the roll-up bag depth 142 may be between approximately 0.83 mm and approximately 1.03 mm. It is also conceivable that, according to some instances, the roll-up bag depth 142 may be selected such that the top side 56 of the substrate 14, when supported by the cross surface 118 of the cross portion 112 of the base 100, is substantially coplanar with the edge surface 120 of the edge portion 114 of the base 100 along the axis of rotation 48.

[0113] As shown in Figure 3C, it is also conceivable that, according to certain embodiments, the base 100 may define the lower roll bag depth 140. In such embodiments, the edge surface 120 may be axially offset from the support perimeter 136 in a direction opposite to the upper roll bag depth 142 (shown in Figure 3B) to reduce the precursor concentration in the gap 66, compared to the precursor concentration in the gap 66 otherwise induced by the flattened bag depth 138 (shown in Figure 3A). During the deposition of the film 12 onto the substrate 14, the reduced precursor concentration in the gap 66 further imparts a lower roll edge thickness profile D to the film 12, compared to a nominal edge thickness profile A otherwise imparted to the film 12.

[0114] In some instances, for a given deposition process, the lower roll bag depth 140 may be greater than (deeper than) the upper roll bag depth 142 (shown in Figure 3B). According to some instances, for a given deposition process, the lower roll bag depth 140 may also be greater than (deeper than) the flattened bag depth 138 (shown in Figure 3A). It is conceivable that in some instances, the lower roll bag depth 140 may be between approximately 1.13 mm and approximately 1.33 mm. It is also conceivable that, according to some instances, the lower roll bag depth 140 may be selected such that the top side 56 of the substrate 14, when supported by the cross surface 118 of the cross portion 112 of the base 100, is axially positioned between the edge surface 120 of the edge portion 114 of the base 100 and the perforated surface 116 of the bag portion 110 of the base 100.

[0115] Referring to Figures 4A to 8B, an example of the base 100 is shown including the contact crack 104. The contact crack 104 is configured to allow a purge gas, such as purge gas 54 (shown in Figure 1), to flow from the purge volume 130 to a gap 66 (shown in Figure 3A), which is defined between the periphery 60 of the substrate 14 and the radially inner periphery 124 of the edge portion 114 of the base 100. It is conceivable that the contact crack 104 supports the periphery 60 of the substrate 14, and the periphery 60 covers the contact crack 104, thereby discontinuously supporting the base 100 through the contact crack 104. In some instances, the contact crack 104 can indirectly allow the purge gas 54 to flow radially along the crossbar 118 via the roughness of the crossbar 118, for example, via a tortuous flow path axially defined between the bottom side 58 of the substrate 14 and the crossbar 118. According to some instances, the contact crack 104 can define a direct flow path, for example, via a radially extending flow region in a purge slit; or a mesh structure axially located between the crossbar 118 and the bottom surface 58 of the substrate 14.

[0116] Without being limited to a specific theory, it is generally believed that allowing the purge gas 54 to flow from the purge volume 130 into the gap 66 will force the precursors, such as the first precursor 50 (shown in Figure 1) and / or the second precursor 52 (shown in Figure 1), to leave the gap 66. Forcing the precursors to leave the gap 66 will thus reduce the precursor concentration in the gap 66, thereby limiting (or preventing) the bridging growth between the substrate 14 and the base 100, according to the flow rate of the purge gas 54 through the contact crack 104 between the cross facet 118 and the periphery of the substrate 14. The flow rate of the purge gas 54 through the contact crack 104 will therefore be at least partially determined by the arrangement of the contact crack 104.

[0117] As shown in Figures 4A and 4B, the contact crack 104 may include an unpolished area 144. In such examples, the unpolished area 144 forms at least a portion of the crossbeam surface 118 and is radially located between the perforated surface 116 of the base 100 and the radially inner periphery 124. More specifically, the unpolished area 144 may be axially disposed between the perforated surface 116 and the periphery 60 of the substrate 14, for example, such that the unpolished area 144 radially passes through the support periphery 136 of the base 100. As those skilled in the art will understand from this disclosure, axially disposing the unpolished area 144 between the crossbeam surface 118 and the periphery 60 of the substrate 14 will allow the purging gas 54 (shown in Figure 1) to flow from the purging volume 130 to the gap 66 at a rate determined by the roughness of the unpolished area 144.

[0118] In some embodiments, the unground area 144 may be radially disposed along the crossbeam surface 118 between the perforated surface 116 and the radially inner periphery 124 of the base 100. According to some embodiments, the unground area 144 may extend radially outward from the perforated surface 116 of the base 100. It is also conceivable that, in some embodiments, the unground area 144 may extend radially inward from the radially inner periphery 124 of the base 100. More conceivable that, according to some embodiments, the unground area 144 may extend continuously along the crossbeam surface 118 and around the pocket portion 110 of the base 100.

[0119] In some instances, the roughness of the unpolished region 144 may be between about 0.2 micrometers and about 5.0 micrometers, or between about 0.5 micrometers and about 5.0 micrometers, or between about 0.8 micrometers and about 5.0 micrometers. It is also conceivable that, according to some instances, the unpolished region 144 may have a roughness even greater than about 5.0 micrometers. For example, the base 100 may be formed by accepting the inherent roughness of the material forming the crossbeam 118, for example by applying the silicon-containing pre-coating 134 to the graphite 132 (or silicon carbide coating) in an unpolished state, thereby simplifying the manufacture of the base 100. As those skilled in the art will understand from this disclosure, the unpolished region 144 allows the periphery 60 of the substrate 14 to cover the unpolished region 144, thereby discontinuously supporting the base 100 through the unpolished region 144.

[0120] As shown in Figures 5A and 5B, the contact crack 104 may include a portion of the polished area 146. In this type of example, the polished area 146 may form at least a portion of the cross face 118 and may be radially disposed between the perforated surface 116 of the base 100 and the radially inner periphery 124. More specifically, the polished area 146 may be axially disposed between the cross face 118 and the periphery 60 of the substrate 14, for example, such that the polished area 146 radially passes through the support periphery 136. As those skilled in the art will understand from this disclosure, this portion of the polishing area 146 is axially disposed between the crossbeam 118 and the periphery 60 of the substrate 14, such that the purging gas 54 (shown in Figure 1) can flow from the purging volume 130 to the gap 66 at a rate determined by the roughness of this portion of the polishing area 146, the roughness of which is imparted by the polishing operation used to polish the crossbeam 118. In some embodiments, the roughness of this portion of the polishing area 146 may be between about 0.2 micrometers and about 5.0 micrometers, or between about 0.5 micrometers and about 5.0 micrometers, or between about 0.8 micrometers and about 5.0 micrometers.

[0121] In some embodiments, this grinding region 146 is radially arranged along the crossbeam surface 118 between the perforated surface 116 and the radially inner periphery 124 of the base 100. According to some embodiments, this grinding region 146 may extend radially outward from the perforated surface 116 of the base 100. It is conceivable that, in some embodiments, this grinding region 146 may extend radially inward from the radially inner periphery 124 of the base 100. It is also conceivable that, according to some embodiments, this grinding region 146 may extend continuously along the crossbeam surface 118 and around the pocket portion 110 of the base 100. In some instances, the base 100 may be formed by limiting the normal grinding degree of the cross face 118, for example, stopping grinding before reaching a roughness of about 0.2 micrometers. This partially ground area 146 simplifies the manufacture of the base 100 and limits (or prevents) bridging between the substrate 14 and the base 100. As those skilled in the art will understand from this disclosure, this partially ground area 146 allows the periphery 60 of the substrate 14 to cover this partially ground area 146 and thereby be discontinuously supported by the base 100 through this partially ground area 146.

[0122] As shown in Figures 6A and 6B, the contact crack 104 may include a roughened region 148. In such examples, the roughened region 148 may form at least a portion of the cross face 118 and may be radially disposed between the radially inner periphery 124 and the radially outer periphery 126 of the base 100. More specifically, the roughened region 148 may be axially disposed between the cross face 118 and the periphery 60 of the substrate 14, for example, such that the roughened region 148 radially crosses the support periphery 136. As those skilled in the art will understand from this disclosure, the roughened region 148 is axially disposed between the crossbeam 118 and the periphery 60 of the substrate 14, such that the purge gas 54 (shown in Figure 1) can flow from the purge volume 130 to the gap 66 at a rate determined by the roughness of the roughened region 148, the roughness of which is imparted by a roughening operation applied to the crossbeam 118. In some embodiments, the roughness of the roughened region 148 may be between about 0.5 micrometers and about 2.0 micrometers, or between about 0.5 micrometers and about 5.0 micrometers, or between about 0.8 micrometers and about 5.0 micrometers.

[0123] In some embodiments, the roughened region 148 is radially disposed along the crossbeam surface 118 between the perforated surface 116 and the radially inner periphery 124 of the base 100. According to some embodiments, the roughened region 148 may extend radially outward from the perforated surface 116 of the base 100. It is conceivable that, in some embodiments, the roughened region 148 may extend radially inward from the radially inner periphery 124 of the base 100. It is also conceivable that, according to some embodiments, the roughened region 148 may extend continuously along the crossbeam surface 118 and around the pocket portion 110 of the base 100. In some instances, the base 100 may be formed by grinding the crossbeam 118 and then reworking it, for example by reworking an over-ground crossbeam or by repairing a base with a ground crossbeam. This reworked or repaired base 100 thereby limits (or prevents) bridging between the substrate 14 and the base 100. As those skilled in the art will understand from this disclosure, the roughened region 148 causes the periphery 60 of the substrate 14 to cover the roughened region 148, thereby discontinuously supporting the base 100 through the roughened region 148.

[0124] This roughened area can be formed, for example, on a substrate not supported by the base 100, by cyclic etching and depositing a film on the cross facet 118 of the base 100. In this regard, cyclic etching and depositing a film on the cross facet 118 of the base 100 may include cyclically (a) etching the cross facet 118 with a mixture of hydrochloric acid (HCl) and hydrogen (H2) gas, and (b) subsequently depositing a silicon layer on the cross facet 118. On the other hand, cyclic etching and depositing the film on the cross facet 118 of the base 100 may include a total of: (a) etching the cross facet 118 for more than 1000 minutes, and (b) depositing a film of more than 4000 micrometers on the cross facet 118.

[0125] As shown in Figures 7A and 7B, the contact crack 104 may include a purge slit 150. In such examples, the purge slit 150 is defined in the cross facet 118 and between the periphery 60 of the substrate 14 and the perforated surface 116. It is conceivable that the purge slit 150 directly fluidly connects the purge volume 130 to the gap 66. In some examples, the purge slit 150 is radially disposed along the cross facet 118 between the perforated surface 116 and the radially inner periphery 124 of the base 100. According to some examples, the purge slit 150 may extend radially outward from the perforated surface 116 of the base 100. It is conceivable that in some examples, the purge slit 150 may extend radially inward from the radially inner periphery 124 of the base 100. It is also conceivable that, according to certain examples, this purge slit 150 may be one of a plurality of purge slits 150 defined by the cross face 118 and distributed around the pocket portion 110 of the base 100. As those skilled in the art will understand from this disclosure, this purge slit 150 allows the periphery 60 of the substrate 14 to cover the purge slit 150, thereby being discontinuously supported by the base 100 by a portion of the edge face 118 defining the purge slit 150.

[0126] As those skilled in the art will understand from this disclosure, the purge slit 150 is axially defined between the crossbar 118 and the periphery 60 of the substrate 14, such that the purge gas 54 (shown in Figure 1) can flow from the purge volume 130 to the gap 66 at a rate determined by the flow area of ​​the purge slit 150. In some embodiments, the purge slit 150 may be one of a plurality of purge slits 150 defined in the crossbar 118 and distributed around the pocket portion 110 of the base 100. According to certain examples, the plurality of purge slits 150 can be evenly distributed around the bag portion 110 of the base 100, thereby uniformly reducing the precursor concentration in the gap 66 by distributing the purge gas 54 (shown in Figure 1) around the periphery 60 of the substrate 14 and in the gap 66.

[0127] As shown in Figures 8A and 8B, the contact crack 104 may include a mesh structure 152. In such examples, the mesh structure 152 is defined in the cross facet 118 and axially located between the periphery 60 of the substrate 14 and the cross facet 118, for example, by a scribing or cutting operation of the graphite 132 (shown in Figure 2) forming the base 100. It is conceivable that the mesh structure 152 directly fluidly connects the purge volume 130 to the gap 66. In some examples, the mesh structure 152 includes a plurality of teeth 154 radially distributed along the cross facet 118 between the perforated surface 116 of the base 100 and the radially inner periphery 124. According to some examples, the mesh structure 152 may extend radially outward from the perforated surface 116 of the base 100. It is conceivable that, in some instances, this mesh structure 152 may extend radially inward from the radially inner periphery 124 of the base 100. It is also conceivable that, according to some instances, this mesh structure 152 may extend continuously along the crossbeam 118 and around the pocket portion 110 of the base 100. As those skilled in the art will understand from this disclosure, this mesh structure 152 allows the periphery 60 of the substrate 14 to cover the mesh structure 152, thereby being discontinuously supported by the base 100 through the mesh structure 152.

[0128] As those skilled in the art will understand from this disclosure, the mesh structure 152 is axially defined between the crossbeam 118 and the periphery 60 of the substrate 14 such that the purge gas 54 (shown in Figure 1) can flow from the purge volume 130 to the gap 66 at a rate determined by the flow area defined between the teeth 154. In some embodiments, the teeth 154 of the mesh structure 152 may be defined on the crossbeam 118 and distributed around the pocket portion 110 of the base 100. According to some embodiments, the teeth 154 of the mesh structure 152 may be evenly distributed around the pocket portion 110 of the base 100, thereby uniformly reducing the concentration of the precursor in the gap 66 by distributing the purge gas 54 (shown in Figure 1) around the periphery 60 of the substrate 14 and in the gap 66.

[0129] Referring to Figures 9A to 13B, an example of this base 100 with precursor venting holes is shown, for example, the precursor 106 (shown in Figure 1). The precursor venting hole array 106 is configured to discharge precursors, such as the first precursor 50 (shown in Figure 1) and / or the second precursor 52 (shown in Figure 1), from this gap 66 (shown in Figure 3A), wherein this gap is defined between the periphery 60 of the substrate 14 and the radially inner periphery 124 of the edge portion 114 of the base 100. Without being limited to any particular theory, it is generally believed that discharging precursors from this gap 66 reduces the tendency of the precursors to recycle (and / or concentrate) in the gap 66, thereby limiting (or preventing) bridging between the substrate 14 and the base 100. In some instances, the precursor exhaust port array 106 can work in conjunction with the contact crack 104 to extract the purge gas 54 from the purge volume 130, pass through the contact crack 104, and enter the gap 66. Once the purge gas 54 has removed the precursor in the gap 66, it reduces the precursor concentration in the gap 66.

[0130] As shown in Figures 9A and 9B, the precursor vent array 106 may include a radial vent 156. In this type of example, the radial vent 156 has a radial vent inlet 158 ​​and a radial vent outlet 160. The radial vent inlet 158 ​​is located on the radial inner periphery 124 of the base 100, and the radial vent outlet 160 is located on the radial outer periphery 126 of the base 100. The radial vent 156 fluidly connects the radial vent inlet 158 ​​to the radial vent outlet 160 to discharge the precursor from the gap 66 to the radial outer periphery 126 of the base 100. In the illustrated example, the radial vent outlet 160 is axially located between the cross face 118 and the perforated face 116, thereby sending the discharged precursor to the upper chamber 40 (shown in Figure 1) of the reactor 16 (shown in Figure 1). In the illustrated example, the radial vent 156 is perpendicular to the axis of rotation 48. As those skilled in the art will understand from this disclosure, discharging the precursor into the upper chamber 40 allows the flow through the radial vent 156 to be controlled by the pressure within the upper chamber 40 of the reactor 16.

[0131] In some instances, the radial vent 156 may be one of a plurality of radial vents 156. According to some instances, the plurality of radial vents 156 are circumferentially distributed around the bag portion 110 of the base 100. According to some instances, the plurality of radial vents 156 may be evenly distributed around the bag portion 110 of the base 100 to provide uniform precursor discharge from the gap 66. Although a specific number of radial vents 156 is shown in the illustrated examples, it should be understood and appreciated that the base 100 may have a greater or lesser number of radial vents 156 than shown in Figures 9A and 9B, and still fall within the scope of this disclosure.

[0132] As shown in Figures 10A and 10B, the preceding drive vent array 106 may include an axial vent 162. In this type of example, the axial vent 162 has an axial vent inlet 164 and an axial vent outlet 166. The axial vent inlet 164 is located on the cross face 118 of the base 100. More specifically, the axial vent inlet 164 is radially disposed between the perforated surface 116 and the radially inner periphery 124 of the base 100. Specifically, the axial vent inlet 164 is located radially outward of the periphery 60 of the substrate 14, for example, at a distance greater than about 152 mm from the rotation axis 48, such that the axial vent inlet 164 is radially disposed between the periphery 60 and the radially inner periphery 124 of the base 100.

[0133] This axial exhaust outlet 166 is located on the bottom surface 128 of the base 100 and is fluidly connected to the axial exhaust inlet 164 via this axial exhaust port 162. In this respect, this axial exhaust outlet 166 is located on one side of the perforated surface 116 and axially opposite to the cross face 118, through which the axial exhaust port 162 sends the discharged precursor to the lower chamber 42 (shown in Figure 1) of the reactor 16 (shown in Figure 1). In the illustrated example, this axial exhaust port 162 is substantially parallel to the axis of rotation 48. As those skilled in the art will understand from this disclosure, discharging the precursor into this lower chamber 42 allows the flow through this axial exhaust port 162 to be controlled by the pressure in the lower chamber 42 of the reactor 16.

[0134] In some instances, the axial vent 162 may be one of a plurality of axial vents 162. According to some instances, the plurality of axial vents 162 may be circumferentially distributed around the bag portion 110 of the base 100. According to some instances, the plurality of axial vents 162 may be evenly distributed around the bag portion 110 of the base 100 to provide uniform precursor discharge in the gap 66. Although a specific number of axial vents 162 are shown in the illustrated examples, it should be understood and appreciated that the base 100 may have a greater or lesser number of axial vents 162 than shown in Figures 10A and 10B, and still fall within the scope of this disclosure.

[0135] As shown in Figures 11A and 11B, the preceding drive exhaust port array 106 may include one or more oblique exhaust ports 168. Each oblique exhaust port 168 has an oblique exhaust inlet 170 and an oblique exhaust outlet 172. The oblique exhaust inlet 170 is located on the radially inner periphery 124 of the base 100. More specifically, the oblique exhaust inlet 170 is radially disposed between the cross face 118 and the edge face 120 of the base 100. Specifically, the oblique exhaust inlet 170 is located radially outer of the support perimeter 136 and on one side of the cross face 118, axially opposite to the perforated surface 116 of the base 100.

[0136] This oblique exhaust outlet 172 is located on the radially outer periphery 126 of the base 100, through which the oblique exhaust port 168 is fluidly connected to the oblique exhaust inlet 170, and extends obliquely through the edge 114 of the base 100 relative to the rotation axis 48. More specifically, this oblique exhaust outlet 172 is located on the radially outer periphery 126, and at a position axially between the cross face 118 and the bottom surface 128 of the base 100. Specifically, this oblique exhaust outlet 172 is located on the radially outer periphery 126, and axially between the cross face 118 and the perforated surface 116 of the base 100. As those skilled in the art will understand from this disclosure, the inclined exhaust outlet 172 is axially positioned between the cross face 118 and the bottom face 128 such that the inclined exhaust port 168 can discharge the precursor from the gap 66 to the partition hole 34 (shown in Figure 1), the flow of the discharged precursor being controlled by the pressure difference between the lower chamber 42 (shown in Figure 1) and the upper chamber 40 (shown in Figure 1) of the reactor 16 (shown in Figure 1).

[0137] In some instances, the angled vent 168 may be one of a plurality of angled vents 168. According to some instances, the plurality of angled vents 168 may be circumferentially distributed with the bag portion 110 of the base 100 as the center. According to some instances, the plurality of angled vents 168 may be evenly distributed around the bag portion 110 of the base 100, thereby providing uniform discharge of precursor from the gap 66. Although a specific number of angled vents 168 is shown in the illustrated examples, it should be understood and appreciated that the base 100 may have a greater or lesser number of angled vents 168 than shown in Figures 11A and 11B, and still fall within the scope of this disclosure.

[0138] As shown in Figures 12A and 12B, in some embodiments, the base 100 may include the contact slit 104 and the pre-driven vent array 106. In such embodiments, both the contact slit 104 and the pre-driven vent array 106 are located radially outside the pocket portion 110 of the base 100. More specifically, the contact slit 104 is located radially outside the pocket portion 110 of the base 100, and the pre-driven vent array 106 is located radially outside the contact slit 104. Specifically, the contact slit 104 is located radially outside the perforated surface 116 of the base 100 and is fluidly connected to the perforated surface 116 of the base 100, while the pre-driven vent array 106 is located radially outside the contact slit 104 and is fluidly connected to the perforated surface 108 via the contact slit 104. As those skilled in the art will understand from this disclosure, fluidly connecting the pre-driving material vent array 106 to the perforated surface 116 via the contact crack 104 reduces the concentration of the pre-driving material in the gap 66 and thereby limits the cooperation between the contact crack 104 and the pre-driving material vent array 106.

[0139] Referring to Figures 13A to 16B, an example of a base 100 having this purge channel array 108 is shown. This purge channel array 108 is configured such that a purge gas, such as purge gas 54 (shown in Figure 1), flows from the lower chamber 42 (shown in Figure 1) of the reactor 16 (shown in Figure 1) to the purge volume 130 defined between the bottom side 58 of the substrate 14 and the perforated surface 116 of the base 100. More specifically, the purge channel array 108 is radially arranged along the cross face 118 of the base 100. Specifically, the purge channel array 108 is located on the cross face 118 and radially arranged between the periphery 60 of the substrate 14 and the perforated surface 116 of the base 100. With this configuration, the purge channel array 108 will emit purge gas from the lower chamber 42 of the reactor 16 to the bottom side 58 of the substrate 14 at a position near the periphery 60 of the substrate 14.

[0140] As shown in Figures 13A and 13B, the purge channel array 108 may include a purge channel 174. The purge channel 174 has a purge channel inlet 176 and a purge channel outlet 178. The purge channel inlet 176 is located on the bottom surface 128 of the base 100 and is fluidly connected to the purge channel outlet 178 via the purge channel 174. The purge channel outlet 178 is located on the cross face 118 and is located radially inward of the periphery 60 of the substrate 14. In some embodiments, the purge channel 174 extends axially through the base 100. According to some embodiments, the purge channel 174 may be substantially parallel to the axis of rotation 48. It is conceivable that in some instances, the purge channel 174 may be one of a plurality of purge channels 174 distributed around the pocket portion 110 of the base 100 on the cross face 118 and located radially outward of the perforated surface 116 of the base 100. It is also conceivable that, according to some instances, the plurality of purge channels 174 may be evenly distributed along the cross face 118 to uniformly deliver the purge gas to the bottom side 58 of the base 100 at a position circumferentially adjacent to the periphery 60 of the substrate 14 and within the purge volume 130.

[0141] As shown in Figures 14A and 14B, in some embodiments, the base 100 may include both the contact slit 104 and the purge channel array 108. In such embodiments, the contact slit 104 and the purge channel array 106 cooperate to limit (or prevent) bridging between the periphery 60 of the substrate 14 and the crossbeam 118, particularly on both the radially inner and radially outer sides of the periphery 60 of the substrate 14. Specifically, the purge channel array 108 operates above the crossbeam 118 and radially inner to the periphery 60 of the substrate 14, axially emitting purge gas 54 (shown in Figure 1) to the bottom side 58 of the substrate 14, and the contact slit 104 operates to allow the purge gas 54 to flow radially outward and between the periphery 60 of the substrate 14 and the crossbeam 118 into the gap 66.

[0142] As those skilled in the art will understand from this disclosure, emitting the purge gas to the bottom side 58 of the substrate 14 and subsequently allowing the purge gas 54 to flow through the contact crack 104 increases the area swept by the purge gas 54 on the bottom side 58 and periphery 60 of the substrate 14, further limiting (or preventing) the bridging between the substrate 14 and the crossbeam 118 of the base 100. Although Figure 14B shows the grid array 152, it should be understood and appreciated that the contact crack 104 may include the unpolished area 144 (shown in Figure 4A), the partially polished area 146 (shown in Figure 5A), the roughened area 148 (shown in Figure 6A), or the purge slit 150 (shown in Figure 7A), and still fall within the scope of this disclosure.

[0143] As shown in Figures 15A and 15B, in some embodiments, the base 100 may include both the pre-driven vent array 106 and the purge channel array 108. In such embodiments, the purge channel array 108 and the pre-driven vent array 104 cooperate to limit (or prevent) bridging between the periphery 60 of the substrate 14 and the crossbeam 118, particularly on both the radially inner and radially outer sides of the periphery 60 of the substrate 14. Specifically, the precursor exhaust port array 106 operates to discharge the precursor 14 from the gap 66 defined between the periphery 60 of the substrate, in order to limit (or prevent) bridging between the periphery 60 of the substrate 14 and the crossbeam 118, especially on the radially outer side of the periphery 60 of the substrate 14, and the purge channel array 108 operates to axially emit the purge gas 54 (shown in Figure 1) to the bottom side 58 of the substrate 14 above the crossbeam 118 and on the radially inner side of the periphery 60 of the substrate 14.

[0144] In some embodiments, supporting the substrate 14 with the crossbar 118 allows the peripheral 60 of the substrate 14 to fluidly separate the purge volume 130 from the pre-driven vent array 106. According to some embodiments, supporting the substrate 14 on the crossbar 118 allows purge gas to flow from the purge volume 130 to the pre-driven vent array 106. In such embodiments, the flow of the purge gas further restricts (or prevents) bridging between the substrate 14 and the crossbar 118 of the base 100. Although Figures 15A and 15B show the pre-driven vent array 106 comprising radial vents 156, it should be understood and appreciated that the pre-driven vent array 106 may include axial vents 162 (shown in Figure 10A) or oblique vents 168 (shown in Figure 11A), and still falls within the scope of this disclosure.

[0145] As shown in Figures 16A and 16B, in some embodiments, the base 100 may include the contact slit 104, the pre-driven vent array 106, and the purge channel array 108. In such embodiments, each of the contact slit 104, the pre-driven vent array 106, and the purge channel array 108 may cooperate to limit (or prevent) bridging between the periphery 60 of the substrate 14 and the cross face 118 of the base 100. Specifically, the purge channel array 108 is operable to emit the purge gas 54 to the bottom side 58 of the substrate 14 at a location adjacent to the periphery 60 of the substrate 14. The contact slit 104 is operable to allow the purge gas 54 (shown in Figure 1) to flow radially outward between the periphery 60 of the substrate 14 and the crossbar 118. The precursor exhaust port array 106 is operable to extract one (or both) of the first precursor 52 (shown in Figure 1) and the purge gas 54 from the gap 66.

[0146] Although Figures 16A and 16B show specific examples of the contact crack 104, the precursor vent array 106, and the purge channel array 108, it should be understood and appreciated that the base 100 may include other types of contact cracks, precursor vent arrays, and purge channel arrays, and still fall within the scope of this disclosure. It is conceivable that the contact crack 104 may include, for example, one of the following: the unpolished area 144 (shown in Figure 4A), the partially polished area 146 (shown in Figure 5A), the roughened area 148 (shown in Figure 6A), or the purge slit 150 (shown in Figure 7A). It is also conceivable that the precursor vent array 106 may include the axial vent 162 (shown in Figure 10A) or the oblique vent 168 (shown in Figure 11A), as a non-limiting example.

[0147] Referring to Figures 17A to 17E, a method 200 for manufacturing a base (e.g., base 100, shown in Figure 1) is illustrated. As shown in block 210, this method 200 includes defining a base, such as base 100 (shown in Figure 1). In some instances, this method 200 may include defining an adjustment bag in the base, such as adjustment bag 102 (shown in Figure 1), as shown in block 220. According to some instances, this method 200 may include providing a contact slit on the cross face of the base, such as contact slit 104 (shown in Figure 1), as shown in block 230. It is conceivable that in some instances, this method 200 may include defining one or more precursor vents in the base, such as precursor vent array 206 (shown in Figure 1), as shown in block 240. It is also conceivable that, in some instances, this method 200 may include defining one or more purge channels in the base, such as this purge channel array 108 (shown in Figure 1), as shown in block 250.

[0148] As shown in Figure 17B, the definition of this base may include defining a circular bag portion having a perforated surface, such as the circular bag portion 110 (shown in Figure 2) having this perforated surface 116 (shown in Figure 2), as shown in block 212. The definition of this base may include defining an annular crossbar extending from the bag portion and having a crossbar surface, such as the crossbar portion 112 (shown in Figure 2) having this crossbar surface 118 (shown in Figure 2), as shown in block 214. The definition of this base may include defining an annular edge portion connected to the bag portion by the crossbar portion and having an edge surface, such as the edge portion 114 (shown in Figure 2) having this edge surface 120 (shown in Figure 2), as shown in block 216. It is conceivable that this base may be formed of graphite, such as graphite 132 (shown in Figure 2), as shown in block 218. It is also conceivable that this base may have a silicon-containing pre-coating, such as silicon-containing pre-coating 134 (shown in Figure 2), as shown in block 211.

[0149] As shown in Figure 17C, the definition of this conditioning bag may include defining a flattened bag depth in this base, such as flattened bag depth 138 (shown in Figure 3A), as shown in block 222. The definition of this conditioning bag may include defining an up-wrap bag depth in this base, such as up-wrap bag depth 142 (shown in Figure 3B), as shown in block 224. The definition of this conditioning bag may include defining a down-wrap bag depth in this base, such as down-wrap bag depth 142 (shown in Figure 3C), as shown in block 226. This conditioning bag may be selected to compensate for an edge up-wrap, flattened, or edge down-wrap characteristic of a predetermined deposition operation (e.g., a rated deposition operation), such as the deposition operation used to deposit this film 12 (shown in Figure 1), as shown in block 228.

[0150] As shown in Figure 17D, defining the contact crack on the crossbar surface may include leaving at least a portion of the crossbar surface unpolished, such as unpolished area 144 (shown in Figure 4A), as shown in block 232. Defining the contact crack on the crossbar surface may include partially polishing at least a portion of the crossbar surface to define a partially polished area of ​​the crossbar surface, such as partially polished area 146 (shown in Figure 5A), as shown in block 234. Defining the contact crack on the crossbar surface may include roughening a portion of the crossbar surface to define a roughened area on the crossbar surface, such as roughened area 148 (shown in Figure 6A), as shown in block 236. Defining the contact crack on the crossbar surface may include defining one or more purge slits in the crossbar surface, such as purge slit 150 (shown in Figure 7A), as shown in block 238. It is also conceivable that the definition of this contact crack may include defining a mesh structure within the crossbar, such as mesh structure 152 (shown in Figure 8A), as shown in block 231. This mesh structure may be defined by cutting or scribing the crossbar, as a non-limiting example.

[0151] As shown in Figure 17E, defining one or more precursor vents in this base may include defining one or more radial vents in the base, such as radial vent 156 (shown in Figure 9A), as shown in block 242. Defining one or more precursor vents may include defining one or more axial vents, such as axial vent 162 (shown in Figure 10A), as shown in block 244. Defining one or more precursor vents may include defining one or more oblique vents in the base, such as oblique vent 168 (shown in Figure 11A), as shown in block 246. It is conceivable that the precursor vents may be defined at a location radially outer of the bag portion of this base, for example in this cross section and / or this edge portion of the base, as shown in block 248.

[0152] As shown in Figure 17E, the definition of one or more purge channels may include defining one or more purge channels radially outside the perforated surface of the base, as shown in block 252. The definition of one or more purge channels may include defining one or more purge channels radially inside a support perimeter of the base, such as support perimeter 136 (shown in Figure 3A), as shown in block 254. The definition of one or more purge channels may include defining one or more purge channels radially between the support perimeter of the base and the perforated surface, as shown in block 256.

[0153] Referring to Figure 18A, a film deposition method 300 is shown. This method 300 includes supporting a substrate on a crossbeam of a base, for example, the substrate 14 (shown in Figure 1) on a crossbeam 118 (shown in Figure 2) of the base 100 (shown in Figure 1), as shown in block 310. A purge gas is allowed to flow over the bottom side of the substrate, for example, the purge gas 54 (shown in Figure 1) flowing over the bottom side 58 (shown in Figure 1) of the substrate 14 (shown in Figure 1), as shown in block 320. A precursor is allowed to flow over the top side of the substrate, for example, over the top side 56 (shown in Figure 1) of the substrate 14 (shown in Figure 1), as shown in block 330; and a film, for example, film 12 (shown in Figure 1), is deposited on the top side of the substrate, as shown in block 340.

[0154] As shown in Figure 18B, supporting the substrate with this base may include discontinuously supporting the bottom side of the substrate around its periphery using a contact crack, for example, using contact crack 104 (shown in Figure 1), as shown in block 312. Discontinuous support may be achieved by an unpolished area of ​​the base, for example, unpolished area 144 (shown in Figure 4A), as shown in block 314. Discontinuous support may be achieved by a partially polished area of ​​the base, for example, partially polished area 146 (shown in Figure 5A), as shown in block 316. Discontinuous support may be achieved by a roughened area of ​​the base, for example, roughened area 148 (shown in Figure 6A), as shown in block 318. In some instances, discontinuous support may be achieved by a purge slit defined by the base, for example, purge slit 150 (shown in Figure 7A), as shown in block 311. It is also conceivable that, according to certain instances, discontinuous support can be achieved by a grid structure defined by this base, such as this grid structure 152 (shown in Figure 8A), as shown in block 313.

[0155] As shown in Figure 18C, allowing the purge gas to flow over the bottom side of the substrate may include a fluid connection between a purge volume and a gap. The purge volume is defined between the bottom side of the substrate and the perforated surface of the base, and the gap is defined between the periphery of the substrate and the edge of the base, for example, the purge volume 130 (shown in Figure 1) and the gap 66 (shown in Figure 1), as shown in block 322. The fluid connection may be achieved by discontinuously supporting the periphery of the substrate around the base using a contact crack, for example, contact crack 104 (shown in Figure 1), as shown in block 324. For example, the fluid connection may be achieved by an unpolished area of ​​the base, for example, unpolished area 144 (shown in Figure 4A), as shown in block 326. The fluid connection may be achieved by a polished area of ​​the base, for example, polished area 146 (shown in Figure 5A), as shown in block 328. Fluid connection can be achieved using a roughened region, such as roughened region 148 (shown in Figure 6A), as shown in block 321. Alternatively, fluid connection can be achieved using a purge slit, such as purge slit 150 (shown in Figure 7A), or using a mesh structure, such as mesh structure 152 (shown in Figure 8A), as shown in blocks 323 and 325.

[0156] As shown in Figure 18D, allowing the precursor to flow through the top side of the substrate may include discharging the precursor through a gap defined between the periphery and the edge of the substrate, such as gap 66 (shown in Figure 1), as shown in block 332. For example, the precursor may be discharged radially from this gap via a radial vent, such as radial vent 156 (shown in Figure 9A), as shown in block 334. In such examples, the precursor may be discharged from this gap into the upper chamber of the reactor housing the substrate, such as upper chamber 40 (shown in Figure 1), as shown in block 336. The precursor may be discharged axially from this gap via an axial vent, such as axial vent 162 (shown in Figure 10A), as shown in block 338. In such examples, the precursor can be discharged from this gap into a lower chamber of the reactor housing the substrate, such as lower chamber 42 (shown in Figure 1), as shown in block 331. The precursor can also be discharged obliquely from this gap via an oblique vent, such as oblique vent 168 (shown in Figure 11A), as shown in block 333. In such examples, the precursor can be discharged from this gap into both the upper and lower chambers of the reactor, as shown in block 335.

[0157] As shown in Figure 18E, depositing this film onto the substrate may include adjusting an edge thickness profile of the film deposited on the substrate using an adjustment bag of the base, such as adjustment bag 102 (shown in Figure 1), as shown in block 342. For example, a flattened edge thickness profile may be imparted to the film using a flattening bag depth defined by the adjustment bag, such as the flattened edge thickness profile B (shown in Figure 3A) imparted using flattening bag depth 138 (shown in Figure 3A), as shown in block 344. In some instances, an up-rolling edge thickness profile may be imparted to the film using an up-rolling bag depth defined by the adjustment bag, such as the up-rolling edge thickness profile C (shown in Figure 3B) imparted using up-rolling bag depth 142 (shown in Figure 3B), as shown in block 346. It is also conceivable that, in some instances, a roll edge thickness profile can be imparted to the film using a roll depth defined by the adjustment bag, for example, the roll edge thickness profile D (shown in Figure 3C) imparted using a roll depth of 140 (shown in Figure 3C), as shown in block 348.

[0158] Referring again to Figure 18A, this method 300 may include emitting a purge gas to the underside of the substrate at a location adjacent to the periphery of the substrate via a purge channel, for example, emitting the purge gas 54 (shown in Figure 1) via purge channel 174 (shown in Figure 13A), as shown in block 350. In some embodiments, the purge gas may flow from the purge channel to the gap between the periphery of the substrate and the edge of the substrate, for example, via contact crack 104 (shown in Figure 1), as shown in block 352. In such embodiments, the purge gas flowing from the purge channel and through the contact crack may sweep the precursor out of the gap, for example, via the purge channel array 108 (shown in Figure 1), as shown in block 354. It is also conceivable that the purging gas emitted from the bottom surface of the substrate near this perimeter may be retained in this purging volume, for example, according to the roughness of the cross section 112 of this base (shown in Figure 2), as shown in block 356.

[0159] The specific embodiments illustrated and described are examples of the present disclosure and its best mode, and are not intended to limit the scope of these embodiments in any other way. In fact, for the sake of brevity, conventional manufacturing, connection, preparation and other functional aspects of this system may not be detailed. Furthermore, the connecting lines shown in the various figures are intended to represent illustrative functional relationships and / or connections between various elements. Many alternative or additional functional relationships or connections may exist in the actual system and / or may not exist in some embodiments.

[0160] It should be understood that the constructions and / or methods described herein are illustrative in nature, and these specific embodiments or instances should not be considered limiting, as many variations may exist. The specific generalities or methods described herein may represent one or more of any number of processing strategies. Therefore, various illustrative operations may be performed in the illustrative sequence, in other sequences, or in some cases omitted.

[0161] The subject matter of this disclosure includes all novel and non-obvious combinations and sub-combinations of the various processes, systems, and structures disclosed herein, as well as other features, functions, operations, and / or properties, and any and all equivalents thereof. [Simplified Explanation of the Diagram]

[0093] These and other features, features and advantages of this disclosure will be described below with reference to the drawings of certain embodiments, which are intended to illustrate and not limit this disclosure. Figure 1 is a schematic diagram of a semiconductor processing system constructed according to the present disclosure, showing a substrate supported by a base during film deposition onto the top side of a substrate; Figure 2 is a perspective view of the base of Figure 1, showing a circular pouch portion connected to a radially outer annular edge portion by a radially inner crossbar portion to support the substrate during film deposition onto the substrate; Figures 3A to 3C are cross-sectional side views of examples of the base of Figure 1, showing that these adjustment pouches have a flattening pouch depth, a thickening pouch depth, and a thinning pouch depth, respectively; Figures 4A to 8B are cross-sectional side views of examples of the base of Figure 1, showing that the base has contact cracks located on the crossbar surface of the base and below the periphery of the substrate; Figures 9A to 12B are cross-sectional side views of other examples of the base of Figure 1, showing that the base has precursor vent holes extending through the base at a position radially outer of the pouch portion of the base. Figures 13A to 16B are cross-sectional side views of another example of the base of Figure 1, showing that the base has a purge channel extending through the base at a position radially outward of the bag portion of the base; Figures 17A to 17E are block diagrams of a method for manufacturing a base according to the present disclosure, illustrating the operation of the method by way of exemplary and non-limiting examples; and Figures 18A to 18E are block diagrams of a method for depositing a film onto a substrate according to the present disclosure, illustrating the operation of the method by way of exemplary and non-limiting examples.

[0094] As will be understood from the drawings, the elements in the drawings are shown for simplicity and are not necessarily drawn to scale. For example, the relative size of some elements in the drawings may be exaggerated relative to other elements to help improve the understanding of the embodiments illustrated in this disclosure.

Claims

1. A base, comprising: A circular pouch portion is disposed along a rotation axis and has a perforated surface; an annular crossbar portion extends circumferentially around the pouch portion and has a crossbar surface that slopes upward from the perforated surface along the rotation axis; and an annular side edge portion extends circumferentially around the crossbar portion, is connected to the pouch portion from the crossbar portion of the base, and has a side edge surface that is axially offset from the crossbar surface of the base; wherein the side edge portion and the crossbar surface define an adjustment pouch therebetween to adjust an edge thickness profile of a film, the film being deposited on a substrate supported on the crossbar surface of the base, the substrate having a periphery, wherein the periphery of the substrate and a radially inner periphery of the side edge portion define a gap therebetween, and wherein the adjustment pouch defines a pouch depth selected to homogenize, increase, or decrease the precursor concentration in the gap relative to the precursor concentration in a radially inner region of the substrate, thereby adjusting the edge thickness profile of the film.

2. The base as claimed in claim 1, wherein the adjustment bag defines a flattening bag depth, which is selected to flatten a film thickness of the radially inner side of the periphery of the substrate relative to the radially inner region of the substrate.

3. The base of claim 2, wherein the flattened bag depth is less than the depth of a lower roll bag, and wherein the flattened bag depth is greater than the depth of an upper roll bag, and wherein the flattened bag depth is between 0.8 mm and 1.09 mm.

4. The base of claim 2 further includes a substrate supported by the cross face of the base, such that a top side of the substrate is axially disposed along the rotation axis between the edge face of the edge portion of the base and the perforated face of the pocket portion of the base.

5. The base as claimed in claim 1, wherein the adjustment bag defines an up-wrap bag depth, which is configured to increase the film thickness on the substrate radially inward of the periphery of the substrate relative to the radially inner region of the substrate.

6. The base of claim 5, wherein the depth of the upper roll bag is less than the depth of the flattened bag, wherein the depth of the upper roll bag is less than the depth of the lower roll bag.

7. The base of claim 5 further includes a substrate supported by the cross face of the base, such that a top side of the substrate is substantially coplanar with the edge face of the edge portion of the base along the axis of rotation.

8. The base of claim 1, wherein the adjusting bag defines a roll depth, which is configured to reduce the film thickness on the substrate radially inward of the periphery of the substrate relative to the radially inner region of the substrate.

9. The base of claim 8, wherein the depth of the lower roll bag is greater than the depth of an upper roll bag, wherein the depth of the lower roll bag is greater than the depth of a flattened bag.

10. The base of claim 8 further includes a substrate supported by the cross face of the base, such that a top side of the substrate is axially disposed between the edge face of the edge portion of the base and the perforated face of the pocket portion of the base.

11. The base of claim 1, wherein the base is formed of graphite, wherein the graphite is encapsulated by a silicon carbide coating.

12. The base of claim 1, wherein the base has at least one of the following: a contact slit located on the cross face of the base to restrict contact between the substrate and the cross face of the base; an array of purge channels located on the cross face of the base to allow a purge gas to flow between the periphery of the substrate and the cross face of the base; and an array of precursor vent holes located radially outward of the perforated surface to discharge the precursor from the gap defined between the substrate and the edge portion of the base.

13. A semiconductor processing system, comprising: A reactor having a hollow interior; a partition, housed within the reactor and having a partition orifice, the partition dividing the reactor interior into an upper chamber and a lower chamber; a base, as claimed in claim 1, disposed within the reactor and supported for rotation about a rotation axis extending through the partition orifice; a substrate having a bottom side, wherein the bottom side of the substrate and the perforated surface of the base define a purge volume therebetween; wherein the base includes a contact slit located on the cross face of the base, the contact slit being configured to fluidly connect the purge volume to the gap to allow a purge gas to flow into the gap; a purge source connected to the reactor and configured to allow the purge gas to flow through the lower chamber of the reactor; and a precursor source connected to the reactor and configured to allow a precursor gas to flow through the upper chamber of the reactor.

14. A film deposition method, comprising: A base includes: a circular bag portion disposed along a rotation axis and having a perforated surface; an annular crossbar portion extending circumferentially around the bag portion and having a crossbar surface that is inclined upwardly from the perforated surface along the rotation axis; and an annular side edge portion extending circumferentially around the crossbar portion, connected to the bag portion by the crossbar portion of the base, and having a side edge surface that is axially offset from the crossbar surface of the base; the side edge portion and the crossbar surface define an adjustment bag therebetween; a substrate is supported on the crossbar surface of the base, the substrate having a top side and a bottom side, the top side and the bottom side being axially separated from each other by a periphery of the substrate, wherein the periphery of the substrate and a radially inner periphery of the side edge portion define a gap therebetween; a purge gas flows through the perforated surface and enters a purge volume defined between the bottom side of the substrate and the perforated surface of the base; A precursor gas is passed over the top side of the substrate; a film is deposited onto the top side of the substrate using the precursor gas; and the edge thickness of the film deposited on the top side of the substrate is adjusted using the adjustment bag defined by the base.

15. The method of claim 14, wherein the adjustment bag is a flattened bag depth, the method further comprising homogenizing the precursor concentration in the gap relative to a precursor in a radially inner region of the substrate.

16. The method of claim 14, wherein the adjustment bag is an up-wrap bag depth, the method further comprising increasing the precursor concentration in the gap relative to a precursor in a radially inner region of the substrate.

17. The method of claim 14, wherein the adjusting bag is a roll-up bag depth, the method further comprising reducing the precursor concentration in the gap relative to the precursor in one radially inner region of the substrate.

18. The method of claim 14 further includes using a contact crack located on the cross face of the base to limit the contact between the substrate and the cross face of the base.

19. The method of claim 14 further includes using an array of purge channels located on the cross face of the base to allow a purge gas to flow between the periphery of the substrate and the cross face of the base.

20. The method of claim 14 further includes discharging the precursor from the gap by means of an array of precursor vent holes located radially outside the perforated surface of the base, the gap being defined between the periphery of the substrate and the edge of the base.

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