Method for manufacturing a component with a recessed structure, and a component with a recessed structure.

Abstract

The present invention relates to a method for manufacturing a component having a recessed structure, comprising the following steps: (1) providing a catalyst material on a portion of a first surface of a workpiece, wherein the first surface contains an element having a boiling point of fluoride below 550°C, and the catalyst material contains an organic compound having a polar functional group; and (2) exposing the workpiece to a fluorine-containing gas at a temperature above 80°C; and after step (2), forming a recessed structure on the underside of the catalyst material on the first surface.

Description

[Technical Field]

[0001] The present invention relates to a method for manufacturing a component having a recessed structure, and a component having a recessed structure. [Previous Technology]

[0002] Microfabrication technology, which can form fine concave structures on the surface of a sample, is in demand in various fields. As a microfabrication technology, various methods have been proposed and put into practical use to date.

[0003] One of the microfabrication techniques is dry etching, in which reactive gases, ions, and / or free radicals are used to etch the surface of the sample.

[0004] For example, in reactive ion etching (RIE) methods, such as inductively coupled plasma-enhanced ion etching (ICP-RIE), etching is performed by plasmaifying the etching gas and causing it to impact the sample. Regarding this type of RIE method, it has been reported that it can perform extremely fine processing on the sample (e.g., Non-Patent Document 1). Previous Art Documents Non-Patent Documents

[0005] Non-patent document 1: xiao Li, King Yuk Chan and Rodica Ramer, "Fabrication of Through via Holes in Ultra-Thin Fused SilicaWafers for Microwave and Millimeter-Wave Applications", micromachines, 2018, 9, 138 [Summary of the Invention]

[0006] [The problem the invention aims to solve]

[0007] However, the RIE method has the following problems: when a concave structure is formed on the surface of the sample, it is easy to form an inclined shape on the sidewall, and it is difficult to form a concave structure that is close to the ideal shape (vertical structure).

[0008] This invention was made in view of this background, and its object is to provide a method for relatively easily manufacturing a component with a recessed structure having a near-vertical structure. Furthermore, the object of this invention is to provide a component having such a recessed structure. [Technical Means for Solving the Problem]

[0009] In this invention, a method for manufacturing a component having a recessed structure is provided, comprising the following steps: (1) disposing a catalyst material on a portion of a first surface of a workpiece, wherein the first surface contains an element having a boiling point of fluoride below 550°C, and the catalyst material contains an organic compound having a polar functional group; and (2) exposing the workpiece to a fluorine-containing gas at a temperature above 80°C; and after step (2), forming a recessed structure on the underside of the catalyst material on the first surface.

[0010] Furthermore, in this invention, a component is provided having a recessed structure on a first surface, wherein the recessed structure is a bottomed structure and / or a through structure, the first surface comprising at least one element selected from the group consisting of B, C, Si, P, S, Ti, V, Cr, Ge, As, Se, Nb, Mo, Tc, Ru, Rh, Sn, Sb, Te, I, Ta, W, Re, Os, Ir, Pt, and Au, the recessed structure being divided by a first opening formed on the first surface, a surrounding sidewall, and a bottom surface or a second opening, the sidewall having at least one stripe extending from the first opening to the bottom surface or the second opening.

[0011] Furthermore, in this invention, a component is provided having a recessed structure on a first surface, wherein the recessed structure is a bottomed structure and / or a through structure, the first surface contains at least one element selected from the group consisting of B, C, Si, P, S, Ti, V, Cr, Ge, As, Se, Nb, Mo, Tc, Ru, Rh, Sn, Sb, Te, I, Ta, W, Re, Os, Ir, Pt, and Au, the recessed structure has a depth of 1 μm or more, and has a first opening formed on the first surface, and a bottom surface or a second opening, wherein the minimum size of the first opening is set as a, the minimum size of the bottom surface or the second opening of the recessed structure is set as b, the depth of the recessed structure is set as c, and the angle θ represented by the following formula (1) is called the cone angle.

[0012] [Equation 1] Cone angle θ (°) = Equation (1) The above cone angle θ is 0°≦θ≦1°. [Effects of the Invention]

[0013] In this invention, a method is provided that enables relatively easy manufacture of a component having a recessed structure with a near-vertical configuration. Furthermore, in this invention, a component having such a recessed structure is provided.

Implementation Method

[0015] Hereinafter, one embodiment of the present invention will be described.

[0016] As described above, in the previous RIE method, there is the following problem: when a concave structure is formed on the surface of the sample, it is easy to form an "inclined shape" on the sidewall of the concave structure, and it is difficult to form a concave structure that is close to a vertical structure.

[0017] Here, the term "inclined shape" refers to the shape in which the sidewalls of the recessed structure are inclined relative to the extension axis of the depth direction of the recessed structure.

[0018] In order to address this previous problem, the inventors of this case have carried out research and development and discovered a microfabrication technology that can more easily form a concave structure with a near-vertical structure.

[0019] That is, in one embodiment of the present invention, a method for manufacturing a component having a recessed structure is provided, comprising the following steps: (1) providing a catalyst material on a portion of a first surface of a body to be treated, wherein the first surface contains an element having a boiling point of fluoride below 550°C, and the catalyst material contains an organic compound having a polar functional group; and (2) exposing the body to be treated to a fluorine-containing gas at a temperature above 80°C; and after step (2), forming a recessed structure on the underside of the catalyst material on the first surface.

[0020] One embodiment of the present invention includes a process of exposing a workpiece having a catalyst material disposed on its first surface to a fluorine-containing gas at a processing temperature of 80°C or higher (hereinafter, this process is referred to as the "etching process of the present invention"). By performing this etching process of the present invention, it is possible to selectively etch the area (hereinafter referred to as the "coated area") of the first surface of the workpiece having the catalyst material disposed on it in the method of one embodiment of the present invention.

[0021] Hereinafter, with reference to the drawings, the reasons for the ability to perform this etching process at the present time will be explained.

[0022] First, the role of the catalyst material and the effect of the processing temperature in the etching process of the present invention will be explained.

[0023] (Function of the catalyst material) In the etching process of the present invention, the catalyst material comprises an organic compound having polar functional groups. It is believed that such an organic compound having polar functional groups has the effect of reducing the activation energy for the formation of fluorides on the surface of the workpiece.

[0024] Hereinafter, this effect will be explained using Figures 1 to 3. Figures 1 to 3 schematically show the reaction of the surface of the treated object on which the catalyst material is provided.

[0025] Furthermore, in the following description, as an example, it is assumed that the body to be treated is SiO2 and the first surface is hydrogen-sealed.

[0026] First, Figure 1 schematically illustrates the assumed etching mechanism on the first surface of the treated body when the organic compound does not have polar functional groups.

[0027] When hydrogen fluoride (HF) gas is supplied from the environment to the area on the surface of SiO2, which is a substrate containing a catalyst material, i.e., the "coated area", HF molecules (a) perform nucleophilic attacks on Si atoms (b), as shown in (i).

[0028] However, in order for Si atoms (b) and F atoms to react on the surface of the treated body, it is necessary to weaken the HF bond by having the OH groups (c) on the surface interact with the H atoms of the HF molecule (a) as shown in (ii). That is, if no energy is provided to break the HF bond in the HF molecule (a), Si-F bond (d) will not be generated as shown in (iii) with the removal of H 2O (g).

[0029] However, in this reaction system, there is no substance that helps to lower the activation energy of the Si-F bond (d). Therefore, no significant etching reaction occurs in the coated area.

[0030] Furthermore, in this system, as with typical masking pattern processing, there is a tendency for increased etching speed in the areas of the object being processed that are in direct contact with HF gas, i.e., the areas on the surface where no catalyst material is applied (hereinafter referred to as "non-coated areas").

[0031] On the other hand, Figure 2 schematically illustrates the reaction mechanism on the first surface of the treated organism when the organic compound has a polar functional group. Here, it is assumed that the polar functional group is a hydroxyl group.

[0032] In this case, when HF gas is supplied from the environment to the coated area of ​​the catalyst material, as shown in (i), HF molecules (a) perform nucleophilic attacks on Si atoms (b).

[0033] However, in this case, in addition to the above, the O atom of the -δ part (e) of the polar functional group also interacts with the H atom of the HF molecule (a). Furthermore, the H atom of the +δ part (f) of the polar functional group interacts with the OH group (c) on the surface.

[0034] Therefore, as shown in (ii), the HF bond in HF molecule (a) is weakened. Also, the Si(b)-OH(c) bond is weakened. Therefore, the activation energy required for the bonding reaction between Si and F atoms is reduced.

[0035] As a result, as shown in (iii), the O atom of the -δ part (e) of the polar functional group takes away the H atom of the HF molecule (a), and the H atom of the +δ part (f) reacts with the OH group on the surface, thereby causing the detachment of H 2O (g).

[0036] Thus, Si atoms (b) bond with fluorine atoms. Finally, according to the following reaction formula (2), SiF4 and H2O are formed. SiO2+4HF→SiF4↑+2H2O↑ (2) The SiF4 and H2O produced by the reaction are both gases at the processing temperature and are rapidly released from the system.

[0037] Through the above reaction mechanism, the area directly below the catalytic material in the treated body is selectively etched.

[0038] Furthermore, the above reaction is not limited to the case where the polar functional group contains a hydroxyl group. For example, the same reaction can also occur when the polar functional group has at least one of the following: aldehyde, hydroxyl, carboxyl, amino, sulfonyl, thiol, and amide bond.

[0039] Furthermore, in Figure 2, the reaction mechanism is explained using the case where the polar functional group of an organic compound contains a H atom as an example. However, the polar functional group of an organic compound is not necessarily limited to those containing H atoms.

[0040] Figure 3 schematically illustrates the reaction mechanism when an organic compound has another polar functional group. Here, it is assumed that the polar functional group is a carbonyl group (>C=O) without a hydrogen atom.

[0041] In this example, when HF gas is supplied from the environment to the coated area of ​​the catalyst material, as shown in (i), HF molecules (a) perform nucleophilic attacks on Si atoms (b). Furthermore, the O atoms of the -δ portion (e) of the polar functional group interact with the H atoms of the HF molecule (a).

[0042] Therefore, as shown in (ii), the HF bond in HF molecule (a) is weakened.

[0043] Secondly, as shown in (iii), H atoms that detach from the HF molecule (a) due to the O atom of the -δ part (e) of the polar functional group bond with the OH group (c) to generate H 2O (g).

[0044] Thus, in this case, the activation energy required for the bonding reaction between Si atoms and F atoms is also reduced. As a result, the reaction shown in the above reaction formula (2) occurs, and the area directly below the coated region in the treated body is selectively etched.

[0045] The same reaction mechanism may also occur, for example, when the polar functional group has at least one of carbonyl, nitro, cyano, ether bond, and ester bond.

[0046] Thus, in the etching process of the present invention, due to the presence of organic compounds with polar functional groups contained in the catalyst material, a fluoride generation reaction is promoted in the coated area of ​​the treated body, and etching can be selectively performed directly below the coated area.

[0047] (Influence of processing temperature) Next, the influence of processing temperature will be explained.

[0048] In the etching process of the present invention, the processing temperature is 80°C or higher. The reason is that when the temperature is below 80°C, appropriate etching selectivity will not occur between the coated area and the uncoated area on the first surface of the object being processed.

[0049] The effect of processing temperature will be explained in more detail below with reference to FIG4.

[0050] Figure 4 shows the relationship between the processing temperature and the etching reaction rate when etching glass with hydrogen fluoride (HF) gas obtained by the inventors of this case.

[0051] According to Figure 4, the etching rate of the glass gradually increases with temperature before the processing temperature reaches 80°C. However, when the processing temperature reaches above 80°C, the etching rate decreases sharply. As a result, the etching rate reaches its peak at temperatures below 80°C.

[0052] This phenomenon can be considered to correspond to the associated / unassociated state of HF gas. That is, when the temperature is below 80°C, HF gas is in an associated state, but when the temperature is above 80°C, HF gas is in an unassociated (monomer) state. Furthermore, when HF gas is in an associated state, the bonding force of HF bonds is relatively weakened when viewed as a single molecule. Therefore, the F atoms of the HF molecule become more likely to bond with the surface of the substrate, and thus more likely to form fluorides. This behavior can be considered to allow for a higher etching rate when the temperature is below 80°C.

[0053] In the etching process of the present invention, if the processing temperature is set to less than 80°C, the association state of HF gas will have an effect, and the workpiece will be etched in the non-coated area of ​​the catalyst material. Therefore, the etching selectivity of the coated area decreases due to the above-mentioned reaction mechanism.

[0054] In contrast, when the processing temperature is set to 80°C or higher, the higher etching force caused by the associated HF gas can be suppressed in the non-coated area of ​​the catalyst material. Furthermore, based on the above-described reaction mechanism, etching of the workpiece can be performed directly below the coated area. As a result, in the etching process of the present invention (processing temperature above 80°C), higher etching selectivity can be obtained between the coated and non-coated areas of the catalyst material. Furthermore, in the etching process of the present invention, the coated area can be selectively etched.

[0055] (Formed concave structure) In the previous RIE method, it is easy to form an "inclined shape" on the sidewall of the concave structure, and it is difficult to form a concave structure that is close to a vertical structure.

[0056] In contrast, in the etching process of the present invention, it is relatively easy to form a recessed structure (hereinafter referred to as "vertical recessed structure") having sidewalls that are not "inclined" but extend substantially parallel to the extension axis along the depth direction.

[0057] The reasons will be explained below with reference to Figures 5 and 6.

[0058] One of the etching processes of the present invention is illustrated in Figures 5 and 6.

[0059] FIG5 schematically shows the state in which the catalyst material 3 is provided on the surface of the workpiece 1. Furthermore, in FIG5 and FIG6, for the sake of illustration, the workpiece 1 and the catalyst material 3 are shown to be separated from each other, but in reality they are in contact.

[0060] As described above, it is assumed that the body 1 to be processed is SiO2, and that the surface is H-terminated.

[0061] The catalyst material 3 is an organic compound having a polar functional group. Here, it is assumed that the polar functional group is an OH group. By applying the catalyst material 3 to the surface of the treated body 1, a coated region 8a and an uncoated region 8b are formed on the treated body 1.

[0062] As described above, by exposing the workpiece 1 heated to above 80°C to HF gas, selective etching is performed directly below the coated area 8a where the catalyst material 3 is disposed. This forms a recessed structure directly below the coated area 8a.

[0063] Figure 6 shows the state in which the etching of the workpiece 1 is performed to a certain extent to form a recess structure 5 of a certain depth.

[0064] As described above, a catalyst material 3 is provided in the covered area 8a. Therefore, even if an etching reaction is performed, the catalyst material 3 remains on the bottom surface 6 of the recessed structure 5. That is, as long as the etching process continues, the bottom surface 6 of the recessed structure 5 continues to be in contact with the catalyst material 3. Thereby, the bottom surface 6 of the recessed structure 5 continues to be etched due to the above-described reaction mechanism, and the bottom surface 6 continues to advance in the depth direction.

[0065] On the other hand, when focusing on the sidewall 7 of the recessed structure 5, once etching begins, the portion of the sidewall 7 in contact with the catalyst material 3 undergoes an etching reaction according to the mechanism described above. More precisely, only the portion of the processed body 1 in contact with the side of the catalyst material 3 is etched. Thus, a recessed structure 5 defined by the sidewall 7 is formed at the location in contact with the side of the catalyst material 3.

[0066] However, as the catalyst material 3 continues to descend deeper, after a certain point in time, the upper part of the sidewall 7 no longer contacts the side of the catalyst material 3. Hereinafter, this sidewall 7 that does not contact the side of the catalyst material 3 will be referred to as "the first sidewall portion 7a".

[0067] Here, as described above, in locations where the catalyst material 3 is absent, such as the non-coated region 8b, etching is not actually performed. In other words, in the workpiece 1, the etching reaction only occurs when in contact with the catalyst material 3, and does not occur in other states. Therefore, in the sidewall 7, once the location of the first sidewall portion 7a becomes no longer in contact with the catalyst material 3, subsequent etching has effectively stopped.

[0068] This is a key difference from dry etching methods such as the previous RIE method. That is, in the RIE method, during the etching process, areas that have already been etched, such as near openings on the surface of the workpiece, continue to be exposed to the reactive gas. Therefore, continuing the etching process increases the likelihood of forming a recessed structure with an inclined shape.

[0069] In the etching process of the present invention, as a result of the etching stop action at the first sidewall portion 7a that does not contact the catalyst material 3, the etched body 1 can be selectively etched only directly below the catalyst material 3, and a vertical recess structure is finally formed.

[0070] Due to the above effects, a characteristic vertical recess structure can be formed as recess structure 5 in the etching process of the present invention.

[0071] The etching process of the present invention further has the following additional effects: (I) It can form a deeper recessed structure. In the previous RIE method, there is a limit to the etching depth of SiO2. For example, there is a problem that when the photoresist is used as a masking agent, it is difficult to form a deeper recessed structure such as 20 μm.

[0072] However, in the etching process of the present invention, as long as fluorine-containing gas is continuously supplied to the coated area, an etching reaction will occur. Therefore, a recessed structure with a high aspect ratio can be formed. For example, an aspect ratio of 10 or higher can also be achieved.

[0073] Furthermore, the so-called "depth-to-width ratio" refers to the dimension of the recessed structure in the depth direction relative to the minimum dimension of the opening. (II) Capable of rapid etching The processing speed of the previous RIE method was less than about 1 μm / min, which could hardly be called a micro-machining technology with a sufficiently high speed.

[0074] In contrast, in the etching process of the present invention, by increasing the amount of catalyst material and / or the supply of fluorine-containing gas, etching speeds of 3.0 μm / min or higher can also be achieved, for example. Therefore, the etching process of the present invention can be used as a rapid recess structure formation technology.

[0075] (Method for manufacturing a component with a recessed structure according to one embodiment of the present invention) Next, referring to Figures 7 to 9, a method for manufacturing a component with a recessed structure according to one embodiment of the present invention will be described in more detail.

[0076] FIG7 schematically illustrates the process of a method for manufacturing a component having a recessed structure according to one embodiment of the present invention (hereinafter simply referred to as "the first method").

[0077] As shown in FIG7, the first method includes: (1) step (S110), which provides a body having a first surface, wherein the first surface contains an element having a boiling point of fluoride below 550°C; (2) step (S120), which provides a catalyst material on a portion of the first surface of the body, wherein the catalyst material contains an organic compound having a polar functional group; and (3) step (S130), which exposes the body to a fluorine-containing gas at a temperature above 80°C.

[0078] The following explains each step.

[0079] (Step S110) First, prepare the object to be processed.

[0080] The object being processed may be composed of a single component or a plurality of components.

[0081] When the body to be treated is composed of a single component, the body to be treated contains an element that forms a fluoride with a boiling point of 550°C or less by reacting with fluorine (F).

[0082] For example, the treated body may contain at least one element selected from the group consisting of B, C, Si, P, S, Ti, V, Cr, Ge, As, Se, Nb, Mo, Tc, Ru, Rh, Sn, Sb, Te, I, Ta, W, Re, Os, Ir, Pt, and Au. Furthermore, the treated body may also contain at least one element selected from the group consisting of H, N, Cl, Br, and O.

[0083] In particular, the treated body is preferably an element that contains a fluoride that forms a boiling point of 200°C or less by reacting with fluorine.

[0084] For example, the boiling point of silicon (Si) fluoride SiF4 is -86°C, and the substrate containing silicon can be preferably used as the substrate in the first method.

[0085] Furthermore, the boiling points of the fluorides of Al and Ca (AlF3 and CaF2) exceed 550°C. Therefore, Al and Ca cannot be considered elements that can form fluorides with boiling points below 550°C by reacting with fluorine (F).

[0086] The object being processed may be, for example, a quartz glass substrate, a crystal substrate, or a silicon substrate.

[0087] On the other hand, when the body to be treated is composed of a laminate of multiple components, the outermost surface of the body to be treated (hereinafter referred to as "the first surface") contains an element with a boiling point of fluoride of 550°C or less.

[0088] As described above, such elements may be selected from the group consisting of B, C, Si, P, S, Ti, V, Cr, Ge, As, Se, Nb, Mo, Tc, Ru, Rh, Sn, Sb, Te, I, Ta, W, Re, Os, Ir, Pt, and Au. Furthermore, the first surface may further include at least one element selected from the group consisting of H, N, Cl, Br, and O.

[0089] For example, the object being processed may have one or more films disposed on a substrate, and the outermost film satisfies the above-described features. Alternatively, the plurality of films may be made to satisfy the above-described features as a whole.

[0090] Such a membrane may contain at least one of SiO2, Si3N4, and SiC.

[0091] Alternatively, the substrate can also have the above-mentioned features together with the film. In this case, by means of the first method, a component in which the recessed structure is formed into the interior of the substrate can be manufactured. The substrate may be, for example, a quartz glass substrate, a crystal substrate, or a silicon substrate.

[0092] Furthermore, in the following description, in order to avoid complexity, it is assumed that the object being processed is made of a single piece of quartz glass, and that a recessed structure is formed on the first surface of the quartz glass.

[0093] (Step S120) Next, a catalyst material is disposed on the first surface of the object to be treated. The catalyst material is disposed in a specific area of ​​the first surface.

[0094] The catalyst material comprises an organic compound having a polar functional group. The polar functional group may include, for example, at least one selected from the group consisting of hydroxyl, aldehyde, carboxyl, amino, sulfonyl, thiol, amide, carbonyl, nitro, cyano, ether, and ester.

[0095] Representative examples of such organic compounds include phenolic resins, acrylic resins, and methacrylic resins.

[0096] The catalyst material may be composed solely of the above-mentioned organic compounds with polar functional groups, or it may be provided in the form of a mixture with other additives.

[0097] In the latter case, the catalyst material may include solvents, binders, and / or microparticles.

[0098] There are no particular limitations on the method of setting the catalyst material.

[0099] The catalyst material can be applied to the first surface of the body to be treated by means of coating, printing, spin coating or spraying.

[0100] Figure 8 shows a case where a catalyst material is provided on the object being treated.

[0101] As shown in FIG8, the workpiece 110 has a first surface 112 and a second surface 114. Catalyst material 130 is disposed on a portion of the first surface 112 of the workpiece 110.

[0102] Furthermore, in the example shown in FIG8, the catalyst material 130 is configured as a plurality of parallel line patterns 131. However, this is only one example, and the catalyst material 130 can be configured in any manner depending on the desired recess structure. For example, the catalyst material 130 can be configured as a straight line. Alternatively, the catalyst material 130 can be configured as a dot pattern or a single dot.

[0103] The thickness of the catalyst material 130 is not particularly limited, for example, it can be in the range of 0.1 μm to 4 μm. According to the above definition, the area in the first surface 112 where the catalyst material 130 is disposed is called the covered area 140a, and the other areas are called the uncovered areas 140b.

[0104] (Step S130) Next, the workpiece 110 on which the catalyst material 130 is disposed is housed in the processing chamber. Thereafter, in order to perform etching on the workpiece, the processing chamber is heated to a specific temperature and a processing gas is supplied.

[0105] The processing gas includes hydrogen fluoride gas or fluorine gas. For example, the processing gas can be adjusted to a specific concentration by means of a carrier gas such as argon or nitrogen. In this case, the concentration of hydrogen fluoride gas or fluorine gas can be, for example, in the range of 0.1 vol% to 100 vol%.

[0106] As described above, the processing temperature is 80°C or higher. The actual processing temperature varies depending on the elements contained in the workpiece 110 (especially the first surface 112), as well as the type and depth of the recessed structure, but is generally in the range of 200°C to 450°C, and preferably in the range of 250°C to 400°C. By setting the processing temperature to 450°C or lower, the deterioration of the organic compounds contained in the catalyst material 130 can be suppressed.

[0107] As described above, by etching the workpiece 110 under such conditions, the above reaction formula (2) occurs in the coated region 140a. Furthermore, the fluoride and water produced by the reaction escape from the system in the form of gas. As a result, a recessed structure is formed in the coated region 140a of the first surface 112.

[0108] The recessed structure can be a bottomed structure or a through structure. A bottomed structure can be, for example, a bottomed hole and / or a bottomed groove. A through structure can be a through hole or a through groove.

[0109] Figure 9 shows a typical example of a cross-section of the etched object 110.

[0110] In the example shown in Figure 9, the recessed structure 150 is composed of a plurality of grooves, which extend in parallel when viewed from above. In this example, although each groove extends in the depth direction from the first surface 112, it does not reach the second surface 114, and therefore is a bottomed groove.

[0111] Furthermore, after step S130, a process of removing the catalyst material 130 remaining on the bottom surface of the recessed structure 150 can also be performed. For example, the catalyst material 130 can be removed by washing the body 110 to be treated with an acidic solution, an alkaline solution, an organic solvent, a corrosive gas, or a plasma.

[0112] Through the above process, a component 100 having a recessed structure 150 on the first surface 112 can be manufactured.

[0113] (A component with a recessed structure according to one embodiment of the present invention) Next, referring to FIGS. 10 to 13, a component with a recessed structure according to one embodiment of the present invention will be described.

[0114] FIG10 shows a perspective view of a component (hereinafter referred to as "first component 200") having a recessed structure according to one embodiment of the present invention. FIG11 shows a schematic cross-sectional view of the first component 200 shown in FIG10 along line AA.

[0115] As shown in FIG10, the first member 200 has a first surface 202 and a second surface 204 facing each other. Furthermore, the first member 200 has a recessed structure 250 on the side of the first surface 202.

[0116] Furthermore, in the example shown in FIG10, the first surface 202 and the second surface 204 of the first member 200 are generally rectangular. However, the shape of the first surface 202 and the second surface 204 is not particularly limited.

[0117] Furthermore, in the example shown in FIG10, the recessed structure 250 has the shape of a bottomed groove extending in one direction, and the three recessed structures 250 are arranged in parallel.

[0118] However, this is only one example, and the shape and arrangement of the recessed structure 250 are not particularly limited. For example, the recessed structure 250 can be a bottomed structure or a through structure. A bottomed structure can be, for example, a bottomed hole and / or a bottomed groove. Similarly, a through structure can be a through hole or a through groove. Likewise, the pattern of the recessed structure 250 can be of any shape.

[0119] As shown in FIG11, the recessed structure 250 has an opening 252 on the first surface 202. Furthermore, the recessed structure 250 has a bottom surface 256 and a sidewall 257. In other words, the recessed structure 250 is divided by the opening 252, the bottom surface 256, and the sidewall 257.

[0120] The first component 200 can be manufactured, for example, by the first method described above.

[0121] Here, the first member 200 has the feature of having a stripe pattern along the depth direction on the side wall 257.

[0122] The feature will be described below with reference to FIG12.

[0123] FIG12 schematically shows the morphology of the surface of the sidewall 257 of the recessed structure 250. FIG12 schematically shows a portion of the sidewall 257 obtained by cutting along the extension axis in the direction of the first surface 202 of the first member 200 and the extension axis in the depth direction in the recessed structure 250.

[0124] As shown in FIG12, in the first member 200, a continuous stripe (hereinafter referred to as "continuous stripe") 280 is formed on the side wall 257 of the recess structure 250, extending from the first opening 252 to the bottom surface 256 without interruption.

[0125] Furthermore, Figure 12 shows three consecutive stripes 280. However, this is only one example, and the number of consecutive stripes 280 is not particularly limited.

[0126] The pattern of this continuous stripe 280 is obvious and cannot be seen in the previously etched components. That is, the continuous stripe 280 is a unique feature that can be observed in the first component 200 manufactured by the first method as described above.

[0127] It can be assumed that this pattern of continuous stripes 280 is formed for the following reasons.

[0128] As described above with reference to Figures 5 and 6, in the first method, the coated region 8a is selectively etched using the catalyst material 3 disposed on the coated region 8a. Furthermore, as long as the relationship between the catalyst material 3 and the coated region 8a continues, the recessed structure 5 continues to advance in the depth direction.

[0129] In the case of this etching mechanism, the sidewall 7 of the recessed structure 5 produced by etching is affected by the state of the side surface of the catalyst material 3 that is in contact with the sidewall 7.

[0130] That is, when the side surface of the catalyst material 3 has unevenness, the sidewall 7 of the recessed structure 5 reflects the influence of the unevenness of the side surface of the catalyst material 3 and becomes a surface state with corresponding unevenness.

[0131] Furthermore, in the first method, the catalyst material 3 with such unevenness on the side extends along the depth direction of the recessed structure 5 to the bottom surface 6 of the recessed structure 5. Therefore, it can be considered that a pattern of continuous stripes 280 corresponding to such unevenness is also formed on the sidewall 7 of the finally obtained recessed structure 5.

[0132] In addition to or different from the features described above, the first member 200 may have the feature that the cone angle θ of the recessed structure 5 is in the range of 0° to 2°.

[0133] Hereinafter, this feature will be described with reference to FIG13.

[0134] A cross section along the extension axis L of a certain concave portion is shown in Figure 13 in a pattern.

[0135] The recess 50 has an opening 52 on the first surface of the member. Also, the recess 50 has a bottom surface 56 and a side wall 57.

[0136] Furthermore, although not clearly defined according to Figure 13, the recess 50 can be a circular hole or a rectangular groove when viewed from above. Also, the recess 50 can be a through structure. In this case, the recess 50 can have a second opening instead of the bottom surface 56.

[0137] The cone angle θ for this type of concave portion 50° is specified as follows:

[0138] [Equation 2] Cone angle θ (°) = Equation (1) Here, a is the minimum dimension of opening 52. Also, b is the minimum dimension of bottom surface 56. Also, c is the distance between the first opening 52 and bottom surface 56, that is, the depth of recess 50.

[0139] The cone angle θ represented by Equation (1) serves as an indicator of the "verticality" of the recess 50. That is, the smaller the cone angle θ, the more the slope of the sidewall 57 of the recess 50 relative to the extension axis L can be suppressed, and thus it can be said that this recess 50 is close to a "vertical recess structure". In particular, in the first member 200, when the cone angle θ of the recess structure 250 is in the range of 0° to 2°, it can be said that the recess structure 250 has a vertical recess structure.

[0140] In the first member 200, the cone angle θ of the recessed structure 250 may be less than 1°.

[0141] Furthermore, in the first member 200, the depth of the recessed structure 250 may be 1 μm or more. In particular, in the first member 200, the depth of the recessed structure 250 is, for example, 2 μm or more, preferably 3 μm or more.

[0142] (Other features of the first component 200) The first component 200 may be a single component or may be composed of multiple components.

[0143] When the first component 200 is composed of a single component, the first component 200 contains an element that forms a fluoride with a boiling point of 550°C or less by reacting with fluorine (F).

[0144] For example, the first component 200 may contain at least one element selected from the group consisting of B, C, Si, P, S, Ti, V, Cr, Ge, As, Se, Nb, Mo, Tc, Ru, Rh, Sn, Sb, Te, I, Ta, W, Re, Os, Ir, Pt, and Au. Furthermore, the processed body may further contain at least one element selected from the group consisting of H, N, Cl, Br, and O.

[0145] When the first component 200 is composed of a single component, the first component 200 may be, for example, a quartz glass substrate or a crystal substrate.

[0146] On the other hand, when the first component 200 is composed of a plurality of components, the first component 200 contains an element on the first surface 202 of which has a boiling point of fluoride below 550°C.

[0147] As described above, such elements may be selected from the group consisting of B, C, Si, P, S, Ti, V, Cr, Ge, As, Se, Nb, Mo, Tc, Ru, Rh, Sn, Sb, Te, I, Ta, W, Re, Os, Ir, Pt, and Au. Furthermore, the first surface 202 may further include at least one element selected from the group consisting of H, N, Cl, Br, and O.

[0148] For example, the first component 200 may have one or more films disposed on the substrate material, and the outermost film satisfies the above-described features. Alternatively, the plurality of films may be made to satisfy the above-described features as a whole.

[0149] This film may, for example, contain at least one of SiO2, Si3N4 and SiC. Alternatively, the substrate material may also have the above-mentioned characteristics together with the film.

[0150] The first component 200 having this feature can be applied to various applications such as MEMS (Microelectromechanical systems) components, microfluidic components, semiconductor components, optical components, metasurface components, resin molding molds, window glass, and cover glass. [Example]

[0151] Hereinafter, embodiments of the present invention will be described.

[0152] Furthermore, in the following description, Examples 1 to 7 and Examples 11 to 12 are examples, and Example 21 is a comparative example.

[0153] (Example 1) In the following method, a recessed structure is formed on one surface (first surface) of the processed body.

[0154] First, a quartz glass substrate is prepared as the processing body. Next, a coating solution containing a catalyst material is prepared. An i-ray resist is used as the catalyst material, and it is mixed with a solvent (ethyl lactate, n-butyl acetate) to prepare the coating solution.

[0155] The i-ray resist used contains a phenolic varnish resin represented by the following chemical formula.

[0156] [Chemical 1] Therefore, the i-ray resist has hydroxyl groups as polar functional groups.

[0157] Next, a coating liquid is applied to the first surface of the substrate by spin coating. Then, a pattern of catalyst material is applied to the first surface of the substrate by exposure and development. The pattern is a parallel line pattern with a width of about 10 μm and a spacing of about 30 μm.

[0158] Next, the substrate with the pattern of the catalyst material is cut into a size of approximately 20 mm × approximately 20 mm, and the cut sample is placed in the processing chamber. Then, a gas etching process is performed on the sample in the processing chamber. The processing gas is a mixture of nitrogen and hydrogen fluoride gas (HF / N₂ = 20 vol%). The processing temperature is set to 250°C.

[0159] The processed body obtained after etching is called "sample 1".

[0160] Regarding sample 1, it was confirmed that a plurality of parallel extending grooves were formed on the first surface as a recessed structure.

[0161] (Examples 2 to 4) A recessed structure is formed on the first surface of the substrate by means of the same method as in Example 1. However, in Examples 2 to 4, the processing conditions during the etching process are changed to be different from those in Example 1 to form a recessed structure.

[0162] The processed bodies obtained after etching are referred to as "Sample 2" to "Sample 4".

[0163] Regarding samples 2 to 4, it was confirmed that a plurality of parallel extending grooves were formed on the first surface as a recessed structure.

[0164] (Examples 5-6) A recessed structure was formed on the first surface of the substrate using the same method as in Example 1. However, in Examples 5 and 6, the type of catalyst material and etching conditions were changed to form a recessed structure different from that in Example 1. In Examples 5 and 6, EB resist (Electron Beam Resist) was used as the catalyst material.

[0165] EB resist contains organic compounds represented by the following chemical formulas.

[0166] [Chemical 2] Therefore, EB resist has ester bonds as polar functional groups.

[0167] The processed bodies obtained after etching are referred to as "Sample 5" to "Sample 6".

[0168] Regarding samples 5 to 6, it was confirmed that a plurality of parallel extending grooves were formed on the first surface as a recessed structure.

[0169] (Example 7) A recessed structure is formed on the first surface of the substrate using the same method as in Example 1. However, in Example 7, the type of processed body and etching conditions are changed to form a recessed structure different from that in Example 1. A crystal substrate (AT-cut) is used as the processed body.

[0170] The processed body obtained after etching is called "sample 7".

[0171] Regarding sample 7, it was confirmed that a plurality of parallel extending grooves were formed on the first surface as a recessed structure.

[0172] (Example 11) A recessed structure is formed on the first surface of a substrate using the same method as in Example 1. However, in Example 11, the type of processing body and etching conditions are changed to form a recessed structure different from that in Example 1. The processing body is used on a Si wafer with a natural oxide film on the first surface.

[0173] The processed body obtained after etching is called "sample 11".

[0174] Regarding sample 11, it was confirmed that a plurality of parallel extending grooves were formed on the first surface as a recessed structure.

[0175] (Example 12) A recessed structure is formed on the first surface of the substrate using the same method as in Example 1. However, in Example 12, the type of processing body and etching conditions are changed to form a recessed structure that differs from that in Example 1. The processing system is fabricated by sputtering a SiO2 film with a thickness of about 5 μm on the first surface of the glass substrate.

[0176] The processed body obtained after etching is called "sample 12".

[0177] Regarding sample 12, it was confirmed that a plurality of parallel extending grooves were formed on the first surface as a recessed structure.

[0178] (Example 13) A recessed structure is formed on the first surface of the substrate using the same method as in Example 1. However, in Example 13, the type of processing body and etching conditions are changed to form a recessed structure that differs from that in Example 1. The processing system is fabricated by forming a SiO2 film with a thickness of approximately 30 μm on the first surface of the glass substrate using a CVD method.

[0179] The processed body obtained after etching is called "sample 13".

[0180] Regarding sample 13, it was confirmed that a plurality of parallel extending grooves were formed on the first surface as a recessed structure.

[0181] (Example 14) A recessed structure is formed on the first surface of the substrate using the same method as in Example 1. However, in Example 14, the type of processed body and etching conditions are changed to form a recessed structure that differs from that in Example 1. The processed body is a bulk material composed of SiO2 manufactured by particle sintering.

[0182] The processed body obtained after etching is called "sample 14".

[0183] Regarding sample 14, it was confirmed that a plurality of parallel extending grooves were formed on the first surface as a recessed structure.

[0184] (Example 21) As described below, a recessed structure is formed on one surface (first surface) of the processed body by means of the ICP-RIE method.

[0185] The processing body uses the same quartz glass substrate as in Example 1.

[0186] On the first surface of the substrate, a parallel line mask pattern with a thickness of about 7 μm is formed by a three-layer resist process.

[0187] Next, the first surface of the substrate is etched using the ICP-RIE method. In this way, the areas of the first surface where no resist pattern is provided are etched to form a plurality of parallel extending grooves.

[0188] The processed body obtained after processing is called "sample 21".

[0189] The preparation conditions for each sample are summarized in Table 1 below.

[0190] [Table 1] sample Processing unit organic compounds polar functional groups Processing temperature (°C) 1 Quartz glass i-ray corrosion resist hydroxyl 250 2 Quartz glass i-ray corrosion resist hydroxyl 250 3 Quartz glass i-ray corrosion resist hydroxyl 350 4 Quartz glass i-ray corrosion resist hydroxyl 350 5 Quartz glass EB resist ester bond 250 6 Quartz glass EB resist ester bond 250 7 Crystal substrate (AT cutting) i-ray corrosion resist hydroxyl 250 11 Si substrate + natural oxide film i-ray corrosion resist hydroxyl 350 12 Glass substrate + SiO2 film i-ray corrosion resist hydroxyl 350 13 Glass substrate + SiO2 film i-ray corrosion resist hydroxyl 250 14 SiO2 sintered body i-ray corrosion resist hydroxyl 250 twenty one Quartz glass RIE processing (Evaluation) For each sample, the cross-section of the concave structure was observed using a scanning electron microscope (SEM), and various dimensions were measured. Furthermore, the presence of continuous striations on the sidewalls of the concave structure was evaluated.

[0191] Figures 14 to 18 show an example of a cross-section of the concave structure obtained for samples 1, 4, 7, 13 and 21, respectively.

[0192] As can be seen from the photographs, in samples 1, 4, 7 and 13, a vertical concave structure with a significantly suppressed cone angle is formed as a concave structure.

[0193] Figure 19 shows an example of the morphology of the sidewall of the concave structure obtained in sample 4.

[0194] As can be seen from Figure 19, a plurality of continuous stripes are formed on the sidewall of the concave structure, extending uninterruptedly from the first surface to the bottom surface of the concave. This morphology was also confirmed in samples 1-3, 5-7, and 13-14.

[0195] The results obtained for each sample are summarized in Table 2.

[0196] [Table 2] sample Depth of recess (μm) Cone angle θ (°) Continuous stripes 1 13.4 0 have 2 twenty three 0 have 3 4.3 0 have 4 33.8 0.17 have 5 3.2 0 have 6 0.9 0 have 7 2.6 0 have 11 0.04 Undetermined Undetermined 12 1.3 Undetermined Undetermined 13 3.0 0 have 14 - 0 have twenty one twenty one 4.06 none Based on these results, it can be seen that in sample 21, the cone angle θ of the concave structure is relatively large, exceeding 4°, resulting in an inclined shape.

[0197] In contrast, it can be seen that in samples 1 to 7 and samples 13 to 14, the concave structure does not have an inclined shape, but forms a vertical concave structure.

[0198] Furthermore, continuous stripes were confirmed to have been produced in at least samples 1 to 7 and samples 13 to 14.

[0199] (One aspect of the present invention) The present invention may have the following aspects.

[0200] (State 1) A method for manufacturing a component having a recessed structure, comprising the following steps: (1) disposing a catalyst material on a portion of a first surface of a body to be treated, wherein the first surface contains an element having a boiling point of fluoride below 550°C, and the catalyst material contains an organic compound having a polar functional group; and (2) exposing the body to be treated to a fluorine-containing gas at a temperature above 80°C; and after step (2), forming a recessed structure on the underside of the catalyst material on the first surface.

[0201] (State 2) The method described in State 1, wherein the polar functional group comprises at least one selected from the group consisting of hydroxyl, aldehyde, carboxyl, amino, sulfonyl, thiol, amide, carbonyl, nitro, cyano, ether, and ester.

[0202] (State 3) The method described in State 1 or 2, wherein the above-mentioned fluorine-containing gas system contains hydrogen fluoride gas or fluorine gas.

[0203] (State 4) The method described in any one of States 1 to 3, wherein the step (2) above is performed in the range of 200°C to 450°C.

[0204] (State 5) The method described in any one of States 1 to 4, wherein the first surface comprises at least one element selected from the group consisting of H, B, C, N, O, Si, P, S, Cl, Ti, V, Cr, Ge, As, Se, Br, Nb, Mo, Tc, Ru, Rh, Sn, Sb, Te, I, Ta, W, Re, Os, Ir, Pt, and Au.

[0205] (Form 6) The method described in any one of Forms 1 to 5, wherein the above-mentioned recessed structure includes a bottomed structure and / or a through structure.

[0206] (State 7) The method described in State 6, wherein the above-mentioned recessed structure is at least one of a bottom hole, a through hole, a bottom groove, and a through groove.

[0207] (State 8) The method described in any of States 1 to 7, wherein the object being processed is composed of a single component.

[0208] (State 9) The method described in State 8, wherein the above-mentioned treated system is a sintered body of a quartz glass substrate, a crystal substrate, or silicon dioxide particles.

[0209] (State 10) The method described in any one of States 1 to 7, wherein the subject being processed has one or more layers.

[0210] (Patent 11) The method described in Patent 10, wherein the object to be processed has a substrate and a film disposed on the substrate, the film comprising at least one of SiO2, SiN and SiC and forming the first surface.

[0211] (State 12) A component having a recessed structure on a first surface, wherein the recessed structure is a bottomed structure and / or a through structure, wherein the first surface comprises at least one element selected from the group consisting of B, C, Si, P, S, Ti, V, Cr, Ge, As, Se, Nb, Mo, Tc, Ru, Rh, Sn, Sb, Te, I, Ta, W, Re, Os, Ir, Pt, and Au, wherein the recessed structure is divided by a first opening formed on the first surface, a surrounding sidewall, and a bottom surface or a second opening, wherein the sidewall has at least one stripe extending from the first opening to the bottom surface or the second opening.

[0212] (State 13) The component described in State 12, wherein the first surface further comprises at least one selected from the group consisting of H, N, Cl, Br and O.

[0213] (Pattern 14) As described in Pattern 12 or 13, wherein the minimum dimension of the first opening is set as a, the minimum dimension of the bottom surface of the recess is set as b, the depth of the recess is set as c, and the angle θ represented by the following formula (1) is called the cone angle,

[0214] [Formula 3] Cone angle θ (°) = Formula (1) The cone angle θ above is 0°≦θ≦2°.

[0215] (State 15) The component described in any one of States 12 to 14, wherein the above-mentioned recessed structure is at least one of a bottom hole, a through hole, a bottom groove, and a through groove.

[0216] (State 16) The component described in any of the states 12 to 15, wherein the component is composed of a single component.

[0217] (State 17) The component described in State 16, wherein the component is a sintered body of a quartz glass substrate, a crystal substrate, or silicon dioxide particles.

[0218] (State 18) A component as described in any of State 12 to 15, wherein the component has one or more layers.

[0219] (Form 19) The component described in Form 16, wherein the component has a substrate and a film disposed on the substrate, the film comprising at least one of SiO2, SiN and SiC and forming the first surface.

[0220] (State 20) A component having a recessed structure on a first surface, wherein the recessed structure is a bottomed structure and / or a through structure, wherein the first surface contains at least one element selected from the group consisting of B, C, Si, P, S, Ti, V, Cr, Ge, As, Se, Nb, Mo, Tc, Ru, Rh, Sn, Sb, Te, I, Ta, W, Re, Os, Ir, Pt, and Au, wherein the recessed structure has a depth of 1 μm or more, and has a first opening formed on the first surface, and a bottom surface or a second opening, wherein the minimum size of the first opening is defined as a, the minimum size of the bottom surface or the second opening of the recessed structure is defined as b, the depth of the recessed structure is defined as c, and the angle θ represented by the following formula (1) is called the cone angle.

[0221] [Formula 4] Cone angle θ (°) = Formula (1) The cone angle θ above is 0°≦θ≦1°.

[0222] (State 21) The component described in State 20, wherein the first surface further comprises at least one selected from the group consisting of H, N, Cl, Br and O.

[0223] (State 22) The component described in State 20 or 21, wherein the component is composed of a single component.

[0224] (State 23) The component described in State 22, wherein the component is a sintered body of a quartz glass substrate, a crystal substrate, or silicon dioxide particles.

[0225] (State 24) The component described in State 20 or 21, wherein the component has one or more layers.

[0226] (Form 25) The component described in Form 23, wherein the component has a substrate and a film disposed on the substrate, the film comprising at least one of SiO2, SiN and SiC and forming the first surface.

[0227] This case asserts priority based on Japanese Patent Application No. 2021-210305, filed on December 24, 2021, and incorporates the entire contents of that Japanese application hereby. [Simplified Explanation of the Diagram]

[0014] Figure 1 is a schematic diagram showing the possible reaction mechanism that may occur on the first surface of the treated body when the organic compound does not have a polar functional group. Figure 2 is a schematic diagram showing the possible reaction mechanism that may occur on the first surface of the treated body when the organic compound has a polar functional group. Figure 3 is a schematic diagram showing the possible reaction mechanism that may occur on the first surface of the treated body when the organic compound has another polar functional group. Figure 4 is a graph showing the relationship between the processing temperature and the etching reaction rate during hydrogen fluoride (HF) gas etching of glass. Figure 5 is a schematic cross-sectional view showing one process of a manufacturing process according to one embodiment of the present invention. Figure 6 is a schematic cross-sectional view showing one process of a manufacturing process according to one embodiment of the present invention. Figure 7 is a schematic flowchart showing the method of manufacturing a component with a recessed structure according to one embodiment of the present invention. Figure 8 is a schematic perspective view showing the case where a catalyst material is provided on the treated body in the method of manufacturing a component with a recessed structure according to one embodiment of the present invention. Figure 9 is a cross-sectional view of an example of a processed body 110 after etching in a method for manufacturing a component with a recessed structure according to one embodiment of the present invention. Figure 10 is a perspective view of a component according to one embodiment of the present invention. Figure 11 is a schematic cross-sectional view along line AA of the component of one embodiment of the present invention shown in Figure 10. Figure 12 is a diagram showing the surface morphology of the sidewall of the recessed structure in a component according to one embodiment of the present invention. Figure 13 is a schematic diagram illustrating the cone angle θ of the recessed structure. Figure 14 is a photograph showing an example of a cross-section of a recessed structure according to an embodiment of the present invention. Figure 15 is a photograph showing an example of a cross-section of a recessed structure according to another embodiment of the present invention. Figure 16 is a photograph showing an example of a cross-section of a recessed structure according to yet another embodiment of the present invention. Figure 17 is a photograph showing an example of a cross-section of a recessed structure according to yet another embodiment of the present invention. Figure 18 is a photograph showing an example of a cross-section of a recessed structure formed by the prior method. Figure 19 is a photograph showing an example of the shape of the sidewall of the recessed structure according to an embodiment of the present invention.

Claims

1. A method for manufacturing a component having a recessed structure, comprising the steps of: (1) providing a catalyst material on a portion of a first surface of a body to be treated, wherein the first surface contains an element having a boiling point of fluoride below 550°C, and the catalyst material contains an organic compound having a polar functional group; and (2) exposing the body to be treated to a fluorine-containing gas at a temperature above 80°C; and after step (2), forming a recessed structure on the underside of the catalyst material on the first surface.

2. The method of claim 1, wherein the polar functional group comprises at least one selected from the group consisting of hydroxyl, aldehyde, carboxyl, amino, sulfonyl, thiol, amide, carbonyl, nitro, cyano, ether, and ester.

3. The method of claim 1 or 2, wherein the aforementioned fluorine-containing gas is hydrogen fluoride gas or fluorine gas.

4. The method of claim 1 or 2, wherein step (2) above is performed in the range of 200°C to 450°C.

5. The method of claim 1 or 2, wherein the first surface comprises at least one element selected from the group consisting of H, B, C, N, O, Si, P, S, Cl, Ti, V, Cr, Ge, As, Se, Br, Nb, Mo, Tc, Ru, Rh, Sn, Sb, Te, I, Ta, W, Re, Os, Ir, Pt, and Au.

6. The method of claim 1 or 2, wherein the recessed structure includes a bottomed structure and / or a through structure.

7. The method of claim 6, wherein the recessed structure is at least one of a bottom hole, a through hole, a bottom groove, and a through groove.

8. The method of claim 1 or 2, wherein the processed body is composed of a single component.

9. The method of claim 8, wherein the above-mentioned treated system is a sintered body of a quartz glass substrate, a crystal substrate, or silicon dioxide particles.

10. The method of request item 1 or 2, wherein the subject being processed has one or more layers.

11. The method of claim 10, wherein the processed body has a substrate and a film disposed on the substrate, the film comprising at least one of SiO2, SiN and SiC and forming the first surface.

12. A component having a recessed structure on a first surface, wherein the recessed structure is a bottomed structure and / or a through structure, wherein the first surface comprises at least one element selected from the group consisting of B, C, Si, P, S, Ti, V, Cr, Ge, As, Se, Nb, Mo, Tc, Ru, Rh, Sn, Sb, Te, I, Ta, W, Re, Os, Ir, Pt, and Au, wherein the recessed structure is divided by a first opening formed on the first surface, surrounding sidewalls, and a bottom surface or a second opening, wherein the sidewalls have at least one stripe extending from the first opening to the bottom surface or the second opening, wherein the minimum dimension of the first opening is defined as a, the minimum dimension of the bottom surface of the recessed structure is defined as b, the depth of the recessed structure is defined as c, and the angle θ represented by the following formula (1) is called the cone angle, [Formula 1] Cone angle θ (°) = Equation (1) The cone angle θ above is 0°≦θ≦2°.

13. The component of claim 12, wherein the first surface further comprises at least one selected from the group consisting of H, N, Cl, Br, and O.

14. The component of claim 12 or 13, wherein the recessed structure is at least one of a bottom hole, a through hole, a bottom groove, and a through groove.

15. The component of claim 12 or 13, wherein the component is composed of a single component.

16. The component of claim 15, wherein the component is a sintered body of a quartz glass substrate, a crystal substrate, or silicon dioxide particles.

17. A component as claimed in claim 12 or 13, wherein the component has one or more layers.

18. The component of claim 15, wherein the component has a substrate and a film disposed on the substrate, the film comprising at least one of SiO2, SiN and SiC and forming the first surface.

19. A component having a recessed structure on a first surface, wherein the recessed structure is a bottomed structure and / or a through structure, wherein the first surface contains at least one element selected from the group consisting of B, C, Si, P, S, Ti, V, Cr, Ge, As, Se, Nb, Mo, Tc, Ru, Rh, Sn, Sb, Te, I, Ta, W, Re, Os, Ir, Pt, and Au, wherein the recessed structure has a depth of 1 μm or more and has a first opening formed on the first surface and a bottom surface or a second opening, wherein the minimum size of the first opening is set as a, the minimum size of the bottom surface or the second opening of the recessed structure is set as b, the depth of the recessed structure is set as c, and the angle θ represented by the following formula (1) is called the cone angle, [Formula 2] Cone angle θ (°) = Formula (1) The cone angle θ is 0°≦θ≦1°.

20. The component of claim 19, wherein the first surface further comprises at least one selected from the group consisting of H, N, Cl, Br, and O.

21. The component of claim 19 or 20, wherein the component is composed of a single component.

22. The component of claim 21, wherein the component is a sintered body of a quartz glass substrate, a crystal substrate, or silicon dioxide particles.

23. A component as claimed in claim 19 or 20, wherein the component has one or more layers.

24. The component of claim 22, wherein the component has a substrate and a film disposed on the substrate, the film comprising at least one of SiO2, SiN and SiC and forming the first surface.

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