For the power supply system of semiconductor manufacturing system clusters

Abstract

The present invention is a power supply system comprising: a power distribution unit; a plurality of power supply devices connected to the power distribution unit; a plurality of semiconductor manufacturing systems, each semiconductor manufacturing system including a plurality of substrate processing chambers and a power receiving device configured to wirelessly receive power from any of the plurality of power supply devices; and a control unit that controls the power distribution unit to adjust the maximum effective power supplied from the power distribution unit to each of the plurality of semiconductor manufacturing systems via the plurality of power supply devices based on the power usage status of each of the plurality of semiconductor manufacturing systems.

Description

For the power supply system of semiconductor manufacturing system clusters This invention relates to a power supply system for a semiconductor manufacturing system group. Patent Document 1 discloses a plasma processing apparatus that uses radio frequency to apply plasma treatment to a substrate. The aforementioned plasma processing apparatus includes a power supply device for supplying power to the process chamber via a cable. [Prior Art Documents] [Patent Documents] Patent Document 1: International Publication No. 2003 / 046959 [The problem that the invention aims to solve] The technology of this invention provides a power supply system for semiconductor manufacturing systems that can achieve efficient power utilization through optimization of power distribution. [Means for solving the problem] One aspect of the present invention is a power supply system comprising: a power distribution unit; a plurality of power supply devices connected to the power distribution unit; a plurality of semiconductor manufacturing systems, each semiconductor manufacturing system including a plurality of substrate processing chambers and a power receiving device configured to wirelessly receive power from any of the plurality of power supply devices; and a control unit that controls the power distribution unit to adjust the maximum effective power supplied from the power distribution unit to each of the plurality of semiconductor manufacturing systems via the plurality of power supply devices based on the power usage status of each of the plurality of semiconductor manufacturing systems. [Effects of the Invention] The present invention can provide a power supply system for a group of semiconductor manufacturing systems that can achieve efficient use of electricity through the optimization of power distribution. In the manufacturing process of semiconductor devices, the interior of a processing module that houses a semiconductor substrate (hereinafter referred to simply as "substrate") is brought into a depressurized state, and predetermined processing is applied to the substrate to perform various processing procedures. These processing procedures are performed in multiple semiconductor manufacturing systems and semiconductor manufacturing system groups that include these multiple semiconductor manufacturing systems. Semiconductor manufacturing system clusters are configured, for example, to have multiple semiconductor manufacturing systems operating concurrently within a cleanroom area. In this configuration, each of the multiple systems has a power supply device, and some systems are individually powered. In this case, the operating rates of the multiple systems are not equal; some systems have high operating rates while others have low operating rates. Furthermore, in semiconductor manufacturing systems and groups of semiconductor manufacturing systems, power supply devices are provided as auxiliary equipment to supply power to multiple units of the semiconductor manufacturing system. For example, as shown in Patent Document 1, power supply from the power supply device is usually carried out using cables. However, the use of cables in power supply, as in Patent Document 1, presents problems such as the need to reserve space for cable laying and the free configuration of cable obstruction devices. Furthermore, in semiconductor manufacturing systems, where power supply equipment is installed in each of multiple systems, and high-operation-rate devices and low-operation-rate systems coexist, the power supply equipment cannot share power, which may prevent the efficient use of the factory power supply used to power the factory. The present invention addresses the aforementioned issues by providing a power supply system for semiconductor manufacturing systems and groups of semiconductor manufacturing systems that enables efficient power utilization through optimized power distribution. Furthermore, it provides a power supply system that reduces device space and increases the flexibility of device configuration. Hereinafter, a semiconductor manufacturing system according to one embodiment of the present invention and a power supply system for a group of semiconductor manufacturing systems equipped with the semiconductor manufacturing system will be described with reference to the illustrations. Furthermore, in this specification and illustrations, elements having substantially the same functional configuration are given the same reference numerals and repeated descriptions are omitted. <Power Supply System> First, a power supply system S1 according to one embodiment will be described. Figure 1 is a schematic diagram illustrating an example of the configuration of the power supply system S1 according to one embodiment. In one embodiment, the power supply system S1 includes multiple semiconductor manufacturing systems 1. Furthermore, near each of the multiple semiconductor manufacturing systems 1, a power supply device 10 is provided, each electrically connected to a power cable 5. The power cable 5 is connected to a power distribution unit 20 that supplies power to the factory (factory power supply, AC power supply source), and AC power is supplied to the power supply device 10 from the power distribution unit 20 via the power cable 5. Multiple power supply units 10, each installed in a plurality of semiconductor manufacturing systems 1, are connected to a power distribution unit 20 via a common power cable 5 that forms a power grid. In other words, power from the power distribution unit 20 is appropriately distributed and supplied to the plurality of power supply units 10. The semiconductor manufacturing system 1 includes a power receiving device 30 (not shown in FIG. 1) that transmits power non-contactly from a power supply device 10. The semiconductor manufacturing system 1 also includes a smart meter 40 (not shown in FIG. 1) that measures the power used by the system and transmits the measurement data. Based on the data measured by the smart meter 40, the power flowing towards the power supply device 10 can be measured, and the power distribution to the multiple power supply devices 10 can be adjusted. The power distribution unit 20 includes a control unit 50, which receives measurement data transmitted from the smart meter 40 and controls the power distribution unit 20. The control unit 50 can analyze the power flowing to the multiple power supply devices 10. The control unit 50 may, for example, be configured to include an autonomous distributed computer that analyzes the power flow and optimizes power distribution. <Semiconductor Manufacturing System Configuration Example 1> Hereinafter, as an example of semiconductor manufacturing system 1, an example of the specific configuration of a plasma processing system equipped with a plasma processing apparatus, namely a substrate processing system, will be described. Figure 2 is a plan view showing the general configuration of the substrate processing system 60. Figure 3 is a side view showing the general configuration of the substrate processing system 60. Here, it will be described that the substrate processing system 60 has plasma processing chambers 62 in multiple locations (6 locations) for performing plasma processing such as etching and film formation on the substrate W. However, the module configuration of the substrate processing system 60 of the present invention is not limited to this, and can be selected according to the purpose of substrate processing. As shown in Figure 2, the substrate processing system 60 is configured such that the atmospheric section 100 and the pressure-reducing section 101 are connected as a single unit via a loading locking module 70. The loading locking module 70 has multiple, for example two, loading locks 71a and 71b along the width direction (X-axis direction) of the loading module 80 (described later). The loading locks 71a and 71b are configured (hereinafter sometimes collectively referred to as "loading lock 71") to connect the internal space of the atmospheric section 100 (described later) and the internal space of the transport module 110 (described later) via substrate transport ports. Furthermore, the substrate transport ports are configured to be freely openable and closed by gate valves 74 and 75, respectively. The loading lock 71 is configured to temporarily hold the substrate W. Furthermore, the loading lock 71 is configured to switch between an atmospheric environment and a depressurized environment (vacuum state). In other words, the loading lock module 70 is configured to appropriately receive the substrate W between the atmospheric section 100 in an atmospheric environment and the depressurized section 101 in a depressurized environment. The atmospheric section 100 includes a loading module 80, which includes a substrate transport device 90 described later; and a loading port 82 for holding a ring 81 capable of storing multiple substrates W. Furthermore, in the loading module 80, a positioning module (not shown) for adjusting the orientation of the substrates W and a storage module (not shown) for storing multiple substrates W can be arranged adjacent to each other. The interior of the loading module 80 is composed of a rectangular enclosure, and the interior of the enclosure is maintained in an atmospheric environment. On one side of the loading module 80, which forms the long side in the negative Y-axis direction, multiple loading ports 82 are arranged side by side, for example, four. On the other side of the loading module 80, which forms the long side in the positive Y-axis direction, loading locks 71a and 71b of the loading locking module 70 are arranged side by side. Inside the loading module 70, a substrate transport device 90 for transporting substrate W is provided. The substrate transport device 90 includes: a transport arm 91 for moving substrate W; a rotary table 92 for rotatably supporting the transport arm 91; and a rotary mounting stage 93 for mounting the rotary table 92. Furthermore, inside the loading module 80, a guide rail 94 extending along the long side direction (X-axis direction) of the loading module 80 is provided. The rotary mounting stage 93 is mounted on the guide rail 94, and the substrate transport device 90 is configured to move along the guide rail 94. The decompression unit 101 includes: a transport module 110 for internally transporting the substrate W; and a processing module (equivalent to a plasma processing apparatus 62) for applying desired processing to the substrate W transported from the transport module 110. The internal configuration of the transport module 110 and the processing module is such that they can be maintained in a decompression environment. Furthermore, in this embodiment, multiple, for example, six processing modules are connected to one transport module 110. Moreover, the number and arrangement of the processing modules are not limited to this embodiment and can be arbitrarily set. The transport module 110, serving as a vacuum transport module, is connected to the loading lock module 70. The transport module 110, for example, transports the substrate W, which has been loaded into the loading lock 71a of the loading lock module 70, to a processing module for desired processing, and then transports it out to the atmosphere 100 via the loading lock 71b of the loading lock module 70. In one embodiment, the transport module 110 has a vacuum transport space and an opening. The opening communicates with the vacuum transport space. Inside the transport module 110, a substrate transport device 120 for transporting substrate W is provided. That is, the substrate transport device 120 is disposed within the vacuum transport space of the vacuum transport module. The substrate transport device 120 includes: a transport arm 121 for moving the substrate W; a rotary table 122 for rotatably supporting the transport arm 121; and a rotary mounting stage 123 for mounting the rotary table 122. The rotary mounting stage 123 is disposed on a guide rail 125 extending along the long side direction (Y-axis direction) of the transport module 110, and the substrate transport device 120 is configured to move along the guide rail 125. The processing module (plasma processing apparatus 62) performs plasma processing on the substrate W, such as etching and film formation. The processing module can be selected to perform the relevant processing for the purpose of substrate processing. Furthermore, the processing module communicates with the transport module 110 via a substrate transport port formed on the side wall of the transport module 110, and the substrate transport port is configured to open and close freely using a gate valve 132. Furthermore, as shown in Figure 3, a wireless power supply unit 140, which supplies power to the entire substrate processing system 60, is electrically connected to the substrate processing system 60. The wireless power supply unit 140 includes: a receiving unit 140a, disposed on the substrate processing system 60 side; and a power supply unit 140b, disposed outside the substrate processing system 60. In one embodiment, the receiving unit 140a and the power supply unit 140b are physically separated. The spacing distance can be, for example, 40 mm or more. In one embodiment, the receiving unit 140a is disposed inside the lower part of the loading locking module 70. In one embodiment, the power supply unit 140b is disposed below the receiving unit 140a, that is, on or below the bottom surface where the substrate processing system 60 is disposed. Also, in one embodiment, the receiving unit 140a can be disposed on the side of the substrate processing system 60. In this case, the power supply unit 140b can be disposed at the position corresponding to the receiving unit 140a on the side of the substrate processing system 60. Furthermore, the figure shows the case where the power receiving unit 140a is located inside and below the loading locking module 70, but the configuration of the power receiving unit 140a is not limited to this. For example, each plasma processing device 62 may have a power receiving unit, or power may be distributed to each plasma processing device 62 from a single power receiving unit provided throughout the entire substrate processing system 60. Alternatively, power receiving units may be provided in each unit or component constituting the plasma processing device 62, and power may be distributed separately. In one embodiment, the receiving section 140a includes a receiving device 30, and the transmitting section 140b includes a power supply device 10. In the wireless power supply section 140, AC power is supplied to the transmitting section 140b from the power distribution unit 20, and AC power is transmitted from the power supply device 10 to the receiving device 30 via a non-contact means such as magnetic resonance. Then, the generated AC power is converted into DC power using a conversion means such as a DC / AC converter (not shown), and DC power is supplied. Alternatively, in another embodiment, the generated AC power can be supplied directly. In one embodiment, the substrate processing system 60 includes a smart meter 40 that measures the power consumption of the substrate processing system 60 as data and then transmits the measurement data to a control unit 50. In the control unit 50 shown in FIG1, based on the measurement data transmitted from the smart meter 40, the power flowing toward the power supply device 10 is measured, and the power supplied and distributed toward the substrate processing system 60 (semiconductor manufacturing system 1) is adjusted based on the measurement result. As shown in FIG. 2, a control unit 150 is provided in the above-described substrate processing system 60. The control unit 150 is, for example, a computer equipped with a CPU and memory, and has a program storage unit (not shown). The program storage unit stores relevant programs to control the handling and processing of the substrate W in the substrate processing system 60. Furthermore, the control unit 150, together with the aforementioned control unit 50, can measure the power flowing towards the power supply device 10 based on data measured by the smart meter 40, and adjust the power supplied and distributed to the substrate processing system 60 based on the measurement results. Moreover, the aforementioned program is recorded on a computer-readable memory medium H, and can be installed in the control unit 150 from the memory medium H, or obtained via communication and then installed in the control unit 150. <Example 2 of Semiconductor Manufacturing System Configuration> Furthermore, the semiconductor manufacturing system 1 is not limited to a plasma processing system equipped with the aforementioned plasma processing apparatus, but can be a system capable of processing various substrates. Hereinafter, as another example of the semiconductor manufacturing system 1, a coating and developing processing system 200 for forming a lower layer film, an intermediate layer film, a resist film, and developing the resist film after exposure processing on a substrate W will be described. Figure 4 is a schematic plan view showing the internal structure of the coating and developing processing system 200. Figures 5 and 6 are schematic side views showing the internal structure of the coating and developing processing system 200. The coating and developing system 200, as shown in FIG. 4, includes: a cassette stage 202, in which cassettes holding multiple substrates W are moved in and out; and a processing stage 203, each unit processing having multiple various processing devices for performing unit processing constituting coating and developing. The coating and developing system 200 is then configured to connect the following components into one unit: the cassette stage 202; the processing stage 203; and an interface stage 205, adjacent to the processing stage 203 and receiving substrates W between the processing stage 203 and the exposure apparatus 204. The cartridge stage 202 is divided into a cartridge loading / unloading section 210 and a substrate transport section 211, for example. The cartridge loading / unloading section 210 is located at the end of the coating and developing system 200 on the negative Y-direction (left side of FIG. 1). A cartridge mounting stage 212 is provided in the cartridge loading / unloading section 210. Multiple mounting plates 213, for example, are provided on the cartridge mounting stage 212. The mounting plates 213 are arranged side-by-side in a row along the horizontal X-direction (vertical direction of FIG. 1). These mounting plates 213 can hold cartridges C when loading / unloading cartridges C from outside the coating and developing system 200. As shown in FIG. 4, in the substrate transport section 211, a substrate transport device 221 is provided that can move freely along the transport path 220 extending along the X direction. The substrate transport device 221 can also move freely along the vertical direction and around the vertical axis (θ direction), and can transport substrates W between the cassette C on each mounting plate 213 and the receiving device of the third block G3 of the processing table 203 described later. The processing station 203 is provided with multiple blocks G1, G2, G3, and G4, each equipped with various devices. For example, block G1 is located on the front side of the processing station 203 (positive X-direction side in FIG4), and block G2 is located on the back side of the processing station 203 (negative X-direction side in FIG4). Furthermore, block G3 is located on the cassette table 202 side of the processing station 203 (negative Y-direction side in FIG4), and block G4 is located on the interface table 205 side of the processing station 203 (positive Y-direction side in FIG4). In block G1, a liquid processing apparatus is provided as a processing unit. For example, as shown in FIG. 5, the developing processing apparatus 230, the lower layer film forming apparatus 231, the intermediate layer film forming apparatus 232, and the resist film forming apparatus 233 are arranged in this order from bottom to top. The developing processing apparatus 230 performs developing processing, supplying developing liquid to the substrate W on which the resist film is formed after exposure, thereby developing the substrate W. The lower layer film forming apparatus 231 performs lower layer film forming processing, supplying coating liquid for lower layer film forming to the substrate W to form a lower layer film on the substrate W. The lower layer film is, for example, a SoC (Spin On Carbon) film. The intermediate layer film forming apparatus 232 performs intermediate layer film forming processing, supplying coating liquid for intermediate layer film forming to the substrate W to form a lower layer film on the substrate W. The intermediate layer film is, for example, a silicon-containing anti-reflective film (SiAR film). The resist film forming apparatus 233 performs a resist film forming process, which supplies resist liquid to the substrate W to form a resist film on the substrate W. For example, the imaging processing apparatus 230, the lower layer film forming apparatus 231, the intermediate layer film forming apparatus 232, and the resist film forming apparatus 233 are arranged in three horizontal directions. Furthermore, the number and arrangement of these imaging processing apparatus 230, lower layer film forming apparatus 231, intermediate layer film forming apparatus 232, and resist film forming apparatus 233 can be arbitrarily selected. In these imaging processing apparatuses 230, lower layer film forming apparatus 231, intermediate layer film forming apparatus 232, and resist film forming apparatus 233, spin coating of a given processing liquid is performed, for example, on a substrate W. During spin coating, for example, the processing liquid is ejected from a coating nozzle onto the substrate W, and simultaneously, the substrate W is moved, causing the processing liquid to diffuse on the surface of the substrate W. Furthermore, a fluid supply device (not shown) serving as a fluid supply unit may be provided near the intermediate layer film forming apparatus 232. For example, in block G2, as shown in FIG. 6, heat treatment apparatus 240 for heating and cooling the substrate W is arranged in both vertical and horizontal directions. Each of these heat treatment apparatuses 240 is configured to perform a given heating treatment on the substrate W followed immediately by a cooling treatment. Such heat treatment apparatuses may employ, for example, a known heat treatment apparatus, which includes the following components: a heating treatment section having a hot plate for heating within a chamber; and a cooling section having a cooling plate that also serves as a transport member for receiving and transferring the substrate W between the hot plate and the cooling plate. The number and arrangement of the heat treatment apparatuses 240 can be arbitrarily selected. The heat treatment apparatus 240 includes a lower layer film heating device, an intermediate layer film heating device, and a PAB processing device. In the heat treatment apparatus 240 for heating the lower layer film, the following heat treatment for the lower layer film is performed: the substrate W, which forms the lower layer film by the lower layer film forming apparatus 231, is heated to harden the lower layer film. In the heat treatment apparatus 240 for heating the intermediate film, the following heat treatment for the lower layer film is performed: the substrate W, which forms the lower layer film by the intermediate layer film forming apparatus 232, is heated to harden the intermediate film. In the heat treatment apparatus 240 for PAB processing, the following PAB processing is performed: the substrate W, which forms the resist film by the resist film forming apparatus 233, is heated before exposure to harden the resist film. In block G3, multiple receiving and transmitting devices 250 are set up, and inspection devices 251 and 252 are set up on them. As shown in Figure 4, the area enclosed by blocks G1 to G4 forms a substrate transport area D. A substrate transport device 270 is, for example, disposed in the substrate transport area D. The substrate transport device 270, for example, has a transport arm 270a that can move freely along the Y direction, the front-back direction, the θ direction, and the vertical direction. The substrate transport device 270 can move within the substrate transport area D and can transport the substrate W to a given device within the surrounding first block G1, second block G2, third block G3, and fourth block G4. For example, as shown in FIG. 6, the substrate transport device 270 has multiple devices arranged vertically, for example, capable of transporting the substrate W to a given height at the same level in each block G1 to G4. Furthermore, a shuttle transport device 271 is provided in the substrate transport area D for linearly transporting the substrate W between the third block G3 and the fourth block G4. The shuttle transport device 271 can move freely in a straight line along the Y direction, for example, as shown in FIG6. The shuttle transport device 271 can move along the Y direction while supporting the substrate W, and transport the substrate W between the receiving device 250 of the third block G3 and the receiving device 260 of the fourth block G4 at the same height. As shown in Figure 4, a substrate transport device 272 is provided on the negative X-direction side of the third block G3. The substrate transport device 272 has, for example, a transport arm 272a that can move freely along the front-back direction, the θ-direction, and the up-down direction. The substrate transport device 272 can move up and down while supporting the substrate W, and transport the substrate W to each receiving device 250 in the third block G3. On the interface stage 205, a substrate transport device 273 and a receiving device 274 are provided. The substrate transport device 273, for example, has a transport arm 273a that can move freely along the Y direction, the θ direction, and the up and down direction. The substrate transport device 273 can, for example, support the substrate W on the transport arm 273a and transport the substrate W between the receiving devices 260, the receiving device 274, and the exposure device 204 in the fourth block G4. Furthermore, a film thickness measuring device K is also provided in the coating and imaging processing system 200. This film thickness measuring device K is configured to measure the film thickness by irradiating the surface of the substrate W with laser light, for example, within a measuring container, and a known measuring device can be used. Furthermore, as shown in Figures 5 and 6, a wireless power supply unit 140, which provides power to the entire coating and developing system 200, is electrically connected to the coating and developing system 200. The wireless power supply unit 140 includes a power receiving unit 140a disposed on the side of the coating and developing system 200, and a power supply unit 140b disposed outside the coating and developing system 200. In one embodiment, the power receiving unit 140a and the power supply unit 140b are physically separated. The spacing distance can be, for example, 40 mm or more. In one embodiment, the power receiving unit 140a is disposed inside the substrate transport unit 211 at its lower level. In one embodiment, the power supply unit 140b is disposed below the power receiving unit 140a, that is, on or below the bottom surface where the coating and developing system 200 is disposed. Also, in one embodiment, the power receiving unit 140a can be disposed on the side of the coating and developing system 200. At this time, a power supply unit 140b can be provided at the position of the power receiving unit 140a on the side of the coating and developing system 200. Furthermore, the attached drawing shows the case where the power receiving unit 140a is located inside and below the substrate transport unit 211, but the configuration of the power receiving unit 140a is not limited to this. For example, a power receiving unit can be provided in each unit or component constituting the coating and developing system 200, and power can be distributed to each unit or component from a single power receiving unit provided throughout the entire coating and developing system 200. In one embodiment, the coating and developing system 200 includes a smart meter 40 that measures the power consumption of the coating and developing system 200 as data, and transmits this measurement data to a control unit 50. As shown in FIG. 1, the control unit 50 measures the power flowing toward the power supply device 10 based on the measurement data transmitted from the smart meter 40, and adjusts the power supplied to the coating and developing system 200 (semiconductor manufacturing system 1) based on the measurement result. As shown in FIG. 4, a control unit 300 is provided in the above-described coating and imaging processing system 200. The control unit 300 is, for example, a computer equipped with a CPU and memory, and has a program storage unit (not shown). The program storage unit stores programs that control various processes performed on the substrate W of the coating and imaging processing system 200. Furthermore, the control unit 300, together with the aforementioned control unit 50, can measure the power flowing towards the power supply device 10 based on data measured by the smart meter 40, and adjust the power supplied to the coating and imaging processing system 200 based on the measurement results. Moreover, the aforementioned program is recorded on a computer-readable memory medium H, and can be installed from the memory medium H into the control unit 300. The memory medium H can be temporary or non-temporary. <Power Supply Method> The power supply system S1 shown in Figure 1 is configured such that multiple devices, including the substrate processing system 60 illustrated in Figures 2 and 3 (which is part of the semiconductor manufacturing system 1) and the coating and imaging processing system 200 illustrated in Figures 4 to 6, exist simultaneously on the same power grid. Depending on the device, devices with high operating rates or low operating rates do not necessarily require equal power supply to each device. Alternating current is supplied from the distribution unit 20 to the power supply units 10 of each device via power cables 5, which form a single power grid. The power supplied to each power supply unit 10 is determined based on data measured by the smart meters 40 present in each device. For example, electricity consumption can be predicted from the electricity usage data measured by the smart meters 40, and power can be supplied based on this prediction. In one embodiment, the power distribution unit 20 includes a control unit 50, which receives measurement results transmitted from the smart meters 40 and controls the power distribution unit 20. The control unit 50 transmits measurement data transmitted from the smart meters 40 of each device and analyzes the measurement data. Based on this analysis, it adjusts the power supply allocated to the multiple semiconductor manufacturing systems 1 that coexist in the power supply system S1. In one embodiment, the maximum effective power supplied from the power distribution unit 20 to each semiconductor manufacturing system 1 can be adjusted based on the usage status of the multiple semiconductor manufacturing systems 1. For example, the power supply for transferring dedicated power from non-operating devices to other operating devices can be optimized. Furthermore, the control unit 50 can predict power consumption based on the substrate handling schedule and processing schedule of each of the multiple semiconductor manufacturing systems 1, and then adjust the maximum effective power supplied from the power distribution unit 20 to each semiconductor manufacturing system 1 based on the predicted power consumption and the usage status of the multiple semiconductor manufacturing systems 1. In one embodiment, the maximum effective power supplied to each of the multiple semiconductor manufacturing systems 1 can be adjusted without changing the rated power of the power distribution unit 20. For example, the rated power of the power distribution unit 20 can be determined to be equal to the sum of the rated power of the multiple connected semiconductor manufacturing systems 1. In one embodiment, the maximum effective power supplied to each of the plurality of semiconductor manufacturing systems 1 may be less than the rated power of each semiconductor manufacturing system 1. For example, it may be limited to less than 70% of the rated power of each semiconductor manufacturing system 1. Furthermore, in another embodiment, the maximum effective power supplied to each of the plurality of semiconductor manufacturing systems 1 may be adjusted to not exceed the actual power used by each semiconductor manufacturing system 1. The actual power used may, for example, be an actual value based on measurement data transmitted from the smart meter 40. In one embodiment, the rated power of the semiconductor manufacturing system 1 depends on various factors. For example, it can be determined based on the number of substrate processing chambers (corresponding to the plasma processing device 62, the imaging processing device 230, the lower layer film forming device 231, the intermediate layer film forming device 232, and the resist film forming device 233) included in the semiconductor manufacturing system 1. <Effects of the Invention> The power supply system S1 of this embodiment supplies power from the power distribution unit 20 to multiple semiconductor manufacturing systems 1 (i.e., a group of semiconductor manufacturing systems) via power cables 5, which constitute a single power grid within the cleanroom area. Each semiconductor manufacturing system 1 is equipped with a smart meter 40, which measures the power used by the system, transmits the measurement data, and supplies power based on the measurement data. By utilizing the smart meters 40 of each semiconductor manufacturing system 1 in a coordinated manner, power distribution is optimized, thereby achieving efficient power utilization. For example, based on data measured by the smart meter 40, the power distribution to multiple semiconductor manufacturing systems 1 is optimized, thereby improving power utilization efficiency and reducing power costs. Furthermore, by transferring dedicated power from inactive devices to other operating devices, power costs can be further reduced. Furthermore, in the power supply system S1, a power supply device 10 connected to the power cable 5 is installed near each semiconductor manufacturing system 1. Then, each semiconductor manufacturing system 1 is equipped with a power receiving device 30 that transmits power from the power supply device 10 in a contactless manner. In other words, the power supply to each semiconductor manufacturing system 1 can also be performed wirelessly. This reduces, or eliminates, the wiring for connecting the semiconductor manufacturing system 1 to the power distribution unit 20 and its surrounding wiring. This also reduces equipment space and increases the flexibility of equipment configuration. The embodiments disclosed herein should be considered illustrative in all respects and are not limited thereto. The above embodiments may be omitted, substituted, or modified in various forms without departing from the scope and spirit of the appended invention claims. For example, the constituent elements of the above embodiments can be arbitrarily combined. Such arbitrary combinations can naturally yield the effects and functions of each constituent element related to the combination, and other effects and functions known to those skilled in the art can be obtained from the description herein. Furthermore, the effects described in this specification are for illustrative or exemplary purposes only and are not intended to limit the invention to these effects. In other words, the technology of this invention may not only achieve the effects described above, but may also achieve other effects known to those skilled in the art from the description herein, or may replace the effects described above and achieve other effects known to those skilled in the art from the description herein. For example, in the power supply system S1 described in the above embodiment, the semiconductor manufacturing system 1 may have an energy storage unit that stores power from the power receiving device 30. In one embodiment, the energy storage unit may be, for example, a capacitor or a battery. In the energy storage unit, the alternating current power from the power receiving device 30 is converted into direct current by a conversion means such as a converter (not shown) and stored. The stored power is supplied to the semiconductor manufacturing system 1, which operates using electricity, and at least one element of the unit or component constituting the semiconductor manufacturing system, and then used to drive the above components. By configuring the semiconductor manufacturing system 1 to include an energy storage unit, in addition to the effects described in the above embodiments, electricity costs can be further reduced. That is, by storing inexpensive electricity in the energy storage unit during a specific time period (e.g., at night) and then using it to drive the semiconductor manufacturing system 1 and the units or components constituting the semiconductor manufacturing system, electricity costs can be reduced. Furthermore, in the power supply system S1 described in the above embodiment, the power transmission from the power supply device 10 to the power receiving device 30 is performed non-contactly, and the power supply to each semiconductor manufacturing system 1 can also be performed in a so-called wireless manner. However, the configuration of the present invention is not limited to this. For example, the power transmission from the power supply device 10 to the power receiving device 30 can be performed in a wired manner. <Other Embodiments of the Invention> Hereinafter, a power supply system S2 according to another embodiment of the present invention will be described. FIG7 is a schematic diagram illustrating an example of the configuration of the power supply system S2 according to another embodiment. Furthermore, in this embodiment, elements having essentially the same functional configuration as those described in the above embodiments may be given the same reference numerals, and repeated descriptions may be omitted. In this embodiment, the power supply system S2 includes multiple semiconductor manufacturing systems 1, and compared to the above embodiment, it includes at least one additional semiconductor manufacturing system 1a. Near each semiconductor manufacturing system 1, 1a, a power supply device 10 is provided, each electrically connected to a power cable 5. The power cable 5 is connected to a power distribution unit 20 that supplies power to the factory (factory power supply, AC power supply source), and AC power is supplied to the power supply device 10 from the power distribution unit 20 via the power cable 5. In one embodiment, the number of power supply devices 10 may be greater than the number of semiconductor manufacturing systems 1, 1a. As shown in FIG7, power supply devices 10 are provided in each of the semiconductor manufacturing systems 1, 1a. Furthermore, there may be power supply devices 10 not provided in the semiconductor manufacturing systems 1, 1a. In this configuration, the semiconductor manufacturing systems 1, 1a can be configured to receive power wirelessly from any of the multiple power supply devices 10 via the power receiving device 30. As described above, increasing the number of power supply devices 10 facilitates the movement of the semiconductor manufacturing systems 1, 1a, thereby increasing the flexibility in configuration changes. In one embodiment, the sum of the maximum effective power supplied to each of the plurality of semiconductor manufacturing systems 1 and the additional semiconductor manufacturing system 1a may be less than the rated power of the power distribution unit 20. This section presents a specific example of power supply. Comparing the power supply system S1 of the above embodiment with the power supply system S2 of this embodiment, the number of semiconductor manufacturing systems is increased. For example, the number of substrate processing chambers included in semiconductor manufacturing systems 1 and 1a is 12. If the maximum usable power of each system is set to "1", the maximum usable power of semiconductor manufacturing systems 1 and 1a becomes "12". In power supply system S1, there are four semiconductor manufacturing systems 1, so the total maximum usable power is "48". At this time, the rated power of the power distribution unit 20 is set to "48". Furthermore, the actual power used by each substrate processing chamber may not be at its maximum; for example, the power used by each chamber may be "0.6". In this case, the power used by the four semiconductor manufacturing systems 1 becomes "28.8", and even if two additional semiconductor manufacturing systems 1a are added, the total power used is only "43.2". In other words, even with the configuration including the additional semiconductor manufacturing systems 1a (power supply system S2), the power used will not exceed the rated power of the originally configured power distribution unit 20 "48". Therefore, according to the power supply system S2 of this embodiment, an efficient power supply can be achieved without changing the rated power of the existing equipment, i.e., by adding semiconductor manufacturing systems 1a. Furthermore, the following configuration examples also fall within the technical scope of the present invention. (1) A power supply system comprising: a power distribution unit; a plurality of power supply devices connected to the power distribution unit; a plurality of semiconductor manufacturing systems, each semiconductor manufacturing system including a plurality of substrate processing chambers and a power receiving device configured to wirelessly receive power from any of the plurality of power supply devices; and a control unit that controls the power distribution unit to adjust the maximum effective power supplied from the power distribution unit to each of the plurality of semiconductor manufacturing systems via the plurality of power supply devices based on the power usage status of each of the plurality of semiconductor manufacturing systems. (2) The power supply system of (1), wherein the maximum effective power supplied to each of the plurality of semiconductor manufacturing systems can be adjusted without changing the rated power of the power distribution unit. (3) The power supply system of (1) or (2), wherein the rated power of the power distribution unit is equal to the sum of the rated power of each of the plurality of semiconductor manufacturing systems. (4) A power supply system of any of (1) to (3), wherein the maximum effective power supplied to each of the plurality of semiconductor manufacturing systems is less than the rated power of the semiconductor manufacturing system. (5) A power supply system of any of (1) to (4), wherein the maximum effective power supplied to each of the plurality of semiconductor manufacturing systems is adjusted to not exceed the actual power used by the semiconductor manufacturing system. (6) A power supply system of any of (1) to (5), wherein the maximum effective power supplied to each of the plurality of semiconductor manufacturing systems is limited to less than 70% of the rated power of the semiconductor manufacturing system. (7) A power supply system of any of (1) to (6), wherein the rated power of the plurality of semiconductor manufacturing systems is determined based on the number of substrate processing chambers included in the semiconductor manufacturing system. (8) A power supply system of any of (1) to (7), further comprising at least one additional semiconductor manufacturing system, the additional semiconductor manufacturing system comprising: a plurality of additional substrate processing chambers; and a power receiving device that wirelessly receives power from at least one of the plurality of power supply devices. (9) The power supply system of (8), wherein the sum of the maximum effective power supplied to each of the aforementioned plurality of semiconductor manufacturing systems and the aforementioned additional semiconductor manufacturing system is less than the rated power of the aforementioned power distribution unit. (10) The power supply system of any of (1) to (9), wherein the aforementioned control unit predicts the power consumption of the semiconductor manufacturing system based on the substrate handling schedule and / or processing schedule of each of the aforementioned plurality of semiconductor manufacturing systems, and controls the aforementioned power distribution unit to adjust the maximum effective power supplied from the aforementioned power distribution unit to each of the aforementioned plurality of semiconductor manufacturing systems via the aforementioned plurality of power supply devices based on the predicted power consumption and the power usage status of each of the aforementioned plurality of semiconductor manufacturing systems.(11) A power supply system as described in any of (1) to (10), wherein the number of the plurality of power supply devices is greater than the number of the plurality of semiconductor manufacturing systems. (12) A power supply system as described in any of (1) to (11), wherein the plurality of semiconductor manufacturing systems includes a smart meter for measuring power usage data, and the control unit is configured to obtain the power usage status of each of the plurality of semiconductor manufacturing systems from the smart meter. (13) A power supply system as described in any of (1) to (12), wherein the plurality of semiconductor manufacturing systems has an energy storage unit for storing power from the aforementioned power receiving device, and power is supplied from the aforementioned energy storage unit to at least one element within the plurality of semiconductor manufacturing systems. (14) A power supply system as described in (13), wherein power is supplied to the aforementioned energy storage unit after the AC power from the aforementioned power receiving device is converted into DC power. (15) A power supply system as described in (13) or (14), wherein the aforementioned energy storage unit is a capacitor or a battery. (16) A power supply system as described in (13) or (15), wherein the aforementioned energy storage unit receives power during a specific time period. (17) A power supply system comprising: a power distribution unit; a plurality of power supply devices configured to be connected to the power distribution unit and wirelessly supplying power to at least one of a plurality of semiconductor manufacturing systems; and a control unit controlling the power distribution unit to adjust the maximum effective power supplied from the power distribution unit to each of the plurality of semiconductor manufacturing systems via the plurality of power supply devices based on the power usage status of each of the plurality of semiconductor manufacturing systems. (18) A power supply system comprising: a power distribution unit; a plurality of semiconductor manufacturing systems connected to the power distribution unit, each semiconductor manufacturing system including a plurality of substrate processing chambers; and a control unit controlling the power distribution unit to adjust the maximum effective power supplied from the power distribution unit to each of the plurality of semiconductor manufacturing systems based on the power usage status of each of the plurality of semiconductor manufacturing systems. 1: Semiconductor Manufacturing System 1a: Semiconductor Manufacturing System 5: Power Cable 10: Power Supply Unit 20: Power Distribution Unit 30: Power Receiving Device 40: Smart Meter 50: Control Unit 60: Substrate Processing System 62: Plasma Processing Chamber 70: Loading Locking Module 71a: Loading Lock 71b: Loading Lock 74: Gate Valve 75: Gate Valve 80: Loading Module 81: Ring Hoop 82: Loading Port 90: Substrate Handling Device 91: Handling Arm 92: Rotary stage 93: Rotary mounting stage 94: Guide rail 100: Atmospheric section 101: Pressure reducing section 110: Conveyor module 120: Substrate handling device 121: Handling arm 122: Rotary stage 123: Rotary mounting stage 125: Guide rail 132: Gate valve 140: Wireless power supply section 140a: Power receiving section 140b: Power supply section 150: Control section 200: Coating and developing system 202: Chiller stage 203: Processing stage 204: Exposure device 2 05: Interface stage 210: Chronograph loading / unloading section 211: Substrate transport section 212: Chronograph mounting stage 213: Mounting plate 220: Transport path 221: Substrate transport device 230: Imaging processing device 231: Lower layer film forming device 232: Intermediate layer film forming device 233: Resist film forming device 240: Heat treatment device 250: Receiving / receiving device 251: Inspection device 252: Inspection device 260: Receiving / receiving device 270: Substrate 270a: Board handling device; 271: Handling arm; 272: Shuttle handling device; 272a: Board handling arm; 273: Board handling device; 273a: Handling arm; 274: Receiving / receiving device; 300: Control unit; C: Chiller; D: Board handling area; G1: Block 1; G2: Block 2; G3: Block 3; G4: Block 4; H: Memory media; K: Film thickness measurement device; S1: Power supply system; S2: Power supply system; W: Board. Figure 1 is a schematic diagram illustrating an example of the configuration of a power supply system according to one embodiment. Figure 2 is a schematic plan view showing the configuration of a substrate processing system. Figure 3 is a schematic side view showing the configuration of a substrate processing system. Figure 4 is a schematic plan view showing the internal configuration of a coating and developing processing system. Figure 5 is a schematic side view showing the internal configuration of a coating and developing processing system. Figure 6 is a schematic side view showing the internal configuration of a coating and developing processing system. Figure 7 is a schematic diagram illustrating an example of the configuration of a power supply system according to another embodiment. 1: Semiconductor Manufacturing System 5: Power cables 10: Power supply device 20: Power Distribution Unit 50: Control Department S1: Power Supply System

Claims

1. A power supply system comprising: a power distribution unit; a plurality of power supply devices connected to the power distribution unit; a plurality of semiconductor manufacturing systems, each semiconductor manufacturing system including a plurality of substrate processing chambers and a power receiving device, the power receiving device receiving power wirelessly from any one of the plurality of power supply devices; and a control unit controlling the power distribution unit to adjust the maximum effective power supplied from the power distribution unit to each of the plurality of semiconductor manufacturing systems via the plurality of power supply devices based on the power usage status of each of the plurality of semiconductor manufacturing systems.

2. The power supply system of claim 1, wherein the maximum effective power supplied to each of the plurality of semiconductor manufacturing systems can be adjusted without changing the rated power of the power distribution unit.

3. The power supply system as claimed in claim 2, wherein the rated power of the power distribution unit is equal to the sum of the rated power of each of the plurality of semiconductor manufacturing systems.

4. The power supply system as described in claim 3, wherein the maximum effective power supplied to each of the plurality of semiconductor manufacturing systems is less than the rated power of the semiconductor manufacturing system.

5. The power supply system as described in claim 3, wherein the maximum effective power supplied to each of the plurality of semiconductor manufacturing systems is adjusted to not exceed the actual power used by the semiconductor manufacturing system.

6. The power supply system of claim 3, wherein the maximum effective power supplied to each of the plurality of semiconductor manufacturing systems is limited to less than 70% of the rated power of the semiconductor manufacturing system.

7. The power supply system of claim 4, wherein the rated power of the plurality of semiconductor manufacturing systems is determined based on the number of substrate processing chambers contained in the semiconductor manufacturing system.

8. The power supply system of claim 7 further comprises at least one additional semiconductor manufacturing system, the additional semiconductor manufacturing system including: a plurality of additional substrate processing chambers; and a power receiving device that wirelessly receives power from at least one of the plurality of power supply devices.

9. The power supply system of claim 8, wherein the sum of the maximum effective power supplied to each of the plurality of semiconductor manufacturing systems and the additional semiconductor manufacturing system is less than the rated power of the distribution unit.

10. The power supply system of claim 1, wherein the control unit predicts the power consumption of the semiconductor manufacturing system based on the respective substrate handling schedule and / or processing schedule of the plurality of semiconductor manufacturing systems, and controls the power distribution unit to adjust the maximum effective power supplied from the power distribution unit to each of the plurality of semiconductor manufacturing systems through the plurality of power supply devices based on the predicted power consumption and the power usage status of each of the plurality of semiconductor manufacturing systems.

11. The power supply system of claim 1, wherein the number of the plurality of power supply devices is greater than the number of the plurality of semiconductor manufacturing systems.

12. The power supply system of claim 1, wherein the plurality of semiconductor manufacturing systems include smart meters for measuring power usage data, and the control unit is configured to obtain the power usage status of each of the plurality of semiconductor manufacturing systems from the smart meters.

13. The power supply system of claim 1, wherein the plurality of semiconductor manufacturing systems have an energy storage unit for storing power from the power receiving device, and from the energy storage unit supplies power to at least one element within the plurality of semiconductor manufacturing systems.

14. The power supply system of claim 13, wherein the power supply to the energy storage unit is performed after the AC power from the power receiving device is converted into DC power.

15. The power supply system of claim 14, wherein the energy storage unit is a capacitor or a battery.

16. The power supply system of claim 15, wherein the energy storage unit receives power during a specific time period.

17. A power supply system comprising: a power distribution unit; a plurality of power supply devices configured to be connected to the power distribution unit and to wirelessly supply power to at least one of a plurality of semiconductor manufacturing systems; and a control unit that controls the power distribution unit to adjust the maximum effective power supplied from the power distribution unit to each of the plurality of semiconductor manufacturing systems via the plurality of power supply devices based on the power usage status of each of the plurality of semiconductor manufacturing systems.

18. A power supply system comprising: a power distribution unit; a plurality of semiconductor manufacturing systems connected to the power distribution unit, each semiconductor manufacturing system including a plurality of substrate processing chambers; and a control unit for controlling the power distribution unit to adjust the maximum effective power supplied from the power distribution unit to each of the plurality of semiconductor manufacturing systems based on the power usage status of each of the plurality of semiconductor manufacturing systems.

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