Magnetic element, magnetic memory, high frequency oscillator, and manufacturing method thereof

Abstract

This invention provides a magnetic element, a magnetic memory, a high-frequency oscillator, and a method for manufacturing the same, comprising a wiring layer with high spin Hall effect and high compatibility with a laminated body having a magnetic tunneling interface formed thereon. The disclosure provides a magnetic element 10, a magnetic memory, and a high-frequency oscillator comprising a wiring layer 11 and a laminated body 12, wherein the wiring layer 11 is an amorphous structure comprising tungsten and an additive element X, and the laminated body 12 is located on the wiring layer and has a magnetic tunneling interface.

Description

Magnetic element, magnetic memory, high-frequency oscillator and manufacturing method thereof The present invention relates to a magnetic element, a magnetic memory, a high-frequency oscillator and a manufacturing method thereof. Due to the explosive growth of information in recent years, non-volatile memory that can retain information even when the power is off has attracted attention. One example of non-volatile memory is magnetoresistive random access memory (MRAM), which uses the magnetization of micromagnets as an information medium. As a representative example of an MRAM memory cell structure, a spin transfer torque magnetoresistive element (STT-MRAM) has been developed, in which current is directly applied to a magnetic tunnel junction (MTJ) serving as a recording element (see, for example, Non-Patent Document 1). STT-MRAM requires a high current to be applied to the high-resistance MTJ to write data. Because the read and write paths are the same, there are issues with rewrite durability. Furthermore, preventing erroneous writes makes high-speed operation difficult. As a novel MRAM structure to address the aforementioned issues, a spin-orbit torque magnetic memory device (SOT-MRAM) has been proposed. This device writes information without applying current directly to the MJT (e.g., see Patent Document 1 and Non-Patent Document 2). SOT-MRAM has the advantages of higher endurance than STT-MRAM and high-speed operation, making it promising for cache memory applications in large-scale integrated circuits. SOT-MRAM utilizes the spin Hall effect in the wiring layer connected to the MJT when writing information. The spin Hall effect is a phenomenon in which when current flows through the wiring layer, spin angular momentum flows in a direction perpendicular to the current flow (so-called spin current). Examples of spin Hall materials used in the wiring layer include platinum (Pt) and tungsten (W) (for example, see Non-Patent Documents 3 to 5 and Patent Document 2). (Prior Technical Literature) (Patent Document) Patent Document 1: Japanese Patent Application No. 2022-507841 Patent Document 2: Japanese Patent Application Laid-Open No. 2021-150639 (Non-patent literature) Non-patent literature 1: Y. Huai, AAPPS Bull., vol. 18, 633 (2008) Non-patent literature 2: L. Liu, et al., Science, vol. 336, pp555-558, (2012) Non-patent document 3: IM Miron, et al., Nature, vol. 476, pp189-193, (2012) Non-patent document 4: CF Pai, et al., Appl. Phys. Lett., vol. 101, 12404, (2012) Non-patent literature 5: S. Shi, et al., Phys. Rev. Appl. 9, 011002 (2018) Platinum, as a material for the wiring layer, has poor compatibility with the crystal structure of the MTJ formed thereon, resulting in poor magnetoresistance effect. Tungsten, which has an A15 structure, is used as a material for the wiring layer. The β phase (so-called β-W) has a larger spin Hall effect and can maintain the magnetoresistance effect of the MTJ when forming SOTMRAM, so it is considered to be a useful spin Hall material for the wiring layer. β-W is in a metastable state, and therefore has a problem of poor heat resistance during heat treatment in the semiconductor manufacturing process of SOTMRAM. The purpose of the invention is to provide a magnetic element, a magnetic memory, a high-frequency oscillator and a manufacturing method thereof having a wiring layer composed of a novel material, wherein the wiring layer has a high spin Hall effect and is highly compatible with a laminate having a magnetic tunneling junction formed thereon. According to one aspect of the present invention, a magnetic element, a magnetic memory and a high-frequency oscillator are provided, wherein the wiring layer has an amorphous structure and contains tungsten and an additive element X, and the laminate is on the wiring layer and has a magnetic tunneling junction. According to the above-mentioned aspects, the provided magnetic element, magnetic memory and high-frequency oscillator have a higher spin Hall effect due to the wiring layer having an amorphous structure containing tungsten and the added element X, and the wiring layer is an amorphous structure, which will suppress the influence on the crystalline structure of the laminate having a magnetic tunneling junction formed thereon, thereby improving the compatibility between the wiring layer and the laminate and having a larger magnetoresistance effect. According to another aspect of the present invention, a method for manufacturing a magnetic element is provided, which includes: a step of forming a wiring layer having an amorphous structure, and a step of using a material source containing tungsten and an additive element X to form the above-mentioned wiring layer; and a step of forming a laminate having a magnetic tunneling junction on the above-mentioned wiring layer. According to the above-mentioned state, an amorphous wiring layer containing tungsten and an added element X is formed to enhance the spin Hall effect, and the wiring layer is amorphous, thereby suppressing the influence on the crystalline structure of the laminate formed thereon, thereby providing a method for manufacturing a magnetic element with a higher magnetoresistance effect. 10, 20, 40, 50: magnetic components, magnetic memory 11: Wiring layer 11a,11b,13a: terminal 12,22:Laminated body 13: Electrode covering layer 14: Magnetization free layer 15: Tunneling barrier layer 16,26,66: reference layer 31: First ferromagnetic layer 32: Non-magnetic spacer layer 33: Second ferromagnetic layer 34: Antiferromagnetic layer 41:Film 60: High-frequency oscillator 61: T-type bias device 62: Thin wire components I SHE :Current FIG1 is a schematic diagram showing the structure of a magnetic element according to one embodiment. FIG. 2 is a diagram illustrating the operation of a magnetic element according to an embodiment. FIG3 is a schematic diagram showing the structure of a magnetic element according to another embodiment. FIG. 4A is a schematic diagram showing the structure of a magnetic element according to a modified example. FIG4B is a schematic structural diagram of a magnetic element according to another modified example. FIG5 is a flow chart of a method for manufacturing a magnetic element according to an embodiment. FIG6A is a conceptual diagram of co-sputtering using two sputtering targets: a tungsten W sputtering target and an additive element X sputtering target. FIG6B is a conceptual diagram showing a case where two sputtering targets, a tungsten W sputtering target and an additive element X sputtering target, are used and sputtering is performed alternately. FIG. 7 is a diagram showing an example of structural analysis of the wiring layer of the magnetic element of Example 1 obtained by thin film X-ray diffraction. FIG. 8 is a diagram showing an example of structural analysis of Example 1 performed using a transmission electron microscope. FIG9 shows the W 100-y (Ta 82 B 18) y A diagram showing the spin Hall effect of the magnetic element when forming the wiring layer of Example 2 of the magnetic element. FIG10A is a schematic diagram of a spin current density measurement circuit. FIG10B shows an example of a ferromagnetic resonance spectrum obtained by measuring the spin current density. FIG11 shows the W 90 B 10 A diagram showing the spin Hall effect when forming the wiring layer of Example 3 of the magnetic element. FIG12 shows the W 100-y (Mo 80 B 20 ) y A diagram showing the spin Hall effect when forming the wiring layer of Example 4 of the magnetic element. FIG13 is a magnetization curve of Example 5 of the magnetic element. FIG14 is a cross-sectional transmission electron microscope image of Example 6 of the magnetic memory. FIG15 is a magnetic resistance curve of Example 6. FIG16 is a magnetoresistance curve of Example 7 of the magnetic memory. FIG17 is a graph for obtaining characteristic values ​​of Example 6 and Example 7. FIG. FIG. 18 is a graph showing characteristic values ​​of Example 6 and Example 7. FIG. FIG. 19 is a diagram showing the abnormal Hall effect of Example 8 of the magnetic memory. FIG20 is a schematic diagram showing the structure of a high-frequency oscillator according to one embodiment. FIG21 is an oscillation signal V of the high frequency oscillator of Example 9 OSC frequency spectrum. The following describes embodiments of the present invention based on the drawings. Common elements across multiple drawings are labeled with the same reference numerals, and repeated detailed descriptions of these elements are omitted. The composition of each layer is described in atomic percent (at%). [Magnetic components] FIG1 is a schematic diagram of the structure of a magnetic element according to one embodiment. Referring to FIG1 , magnetic element 10 comprises a wiring layer 11, a laminate 12, and an electrode cover layer 13. The laminate 12 is located on the wiring layer 11 and has a magnetic tunneling junction. The electrode cover layer 13 is located on the laminate 12. The laminate 12 comprises a magnetization free layer 14, a tunneling barrier layer 15, and a reference layer 16, stacked in order from the wiring layer 11 side, forming a magnetic tunneling junction. In magnetic element 10, when a pulse current flows between terminals 11a and 11b connected to the wiring layer 11, a flow of spin angular momentum, orthogonal to the current direction, is generated. This spin current, known as a spin-orbit torque, acts on the magnetization of the magnetization free layer 14 of the laminate 12, causing the magnetization direction of the magnetization free layer 14 to reverse in response to the polarity of the spin current and the direction of the magnetization. This changes the magnetic resistance between terminal 13a connected to electrode cover layer 13 and terminal 11a or terminal 11b. Since wiring layer 11 is formed of an amorphous alloy of tungsten (W) and an additive element (hereinafter referred to as "additive element X"), the spin Hall effect is large, enabling magnetization reversal of magnetization free layer 14 with low power. The magnetization free layer 14 is formed on the wiring layer 11 and is composed of a ferromagnetic material. The ferromagnetic material of the magnetization free layer 14 is selected from, for example, Fe-B, Co-Fe-B, Co-Ni-B, Fe-Ni-B, etc. In terms of composition, in order to promote the crystallization of the amorphous structure of the tunneling barrier layer 15, it is preferred that the B content be selected from a range of 10 at% to 40 at%. The magnetization free layer 14 uses a Co-Fe-B film, thereby increasing the magnetoresistance ratio of the magnetic element 10 to 100%. To ensure the thermal stability of the magnetization free layer 14 and to enable writing in a controlled film thickness region, the thickness of the magnetization free layer 14 is preferably set to 0.8 nm to 3 nm. When no external magnetic field is applied to the magnetization free layer 14, the magnetization direction can be parallel to the film plane, i.e., in-plane, or perpendicular to the film plane, i.e., perpendicular to the plane. The magnetization direction of the magnetization free layer 14 can be affected by the magnetic field of the magnetization pinned layer of the reference layer 16, the exchange interaction, or the in-plane shape anisotropy of the magnetization free layer 14. The tunneling barrier layer 15 is formed on the magnetization free layer 14 and is made of an insulating material (eg, MgO). To obtain a higher magnetoresistance ratio and a higher output, the thickness of the tunneling barrier layer 15 is preferably set to 0.8 nm to 2.5 nm. Reference layer 16 is formed on tunneling barrier layer 15 and is composed of a ferromagnetic material. Reference layer 16 is a fixed magnetization layer with a substantially fixed magnetization direction. Examples of ferromagnetic materials for reference layer 16 include CoFe, Co-Fe-B, Fe-B, CoPt laminated films, and CoPd laminated films. To ensure high thermal stability, the thickness of reference layer 16 is preferably set between 3 nm and 10 nm. The electrode cover layer 13 is formed on the reference layer 16 by a conductive material, for example, a base layer of a Ta layer and a Ru layer. The wiring layer 11 is composed of an amorphous alloy of tungsten (W) and an additive element X (hereinafter referred to as the "WX alloy"). To maintain the amorphous structure of the wiring layer 11, the additive element X preferably includes at least one element selected from boron (B), phosphorus (P), and carbon (C) (hereinafter referred to as the "element NM"). To maximize the spin Hall angle, the additive element X preferably includes at least one metal element selected from tantalum (Ta) and molybdenum (Mo) (hereinafter referred to as the "metal element M") in addition to the at least one element selected from boron (B), phosphorus (P), and carbon (C) (the "element NM"). The spin Hall angle is the ratio of the spin current density generated by the pulse current flowing through the terminals 11a and 11b of the wiring layer 11 to the unit current density (i.e., the current value relative to the cross-sectional area of ​​the wiring layer 11 perpendicular to the flow of the pulse current). The spin current density is the amount of spin angular motion relative to the surface area of ​​the wiring layer 11 in the stacking direction, and can be measured by, for example, spin torque ferromagnetic resonance. To maximize the amount of spin current injected into the magnetization free layer 14, the thickness of the wiring layer 11 is preferably set to 3 nm to 20 nm. In the wiring layer 11, the content of the additive element X is 5 at% or more, preferably 10 at% or more, and 50 at% or less, preferably 40 at% or less, which is beneficial for achieving a larger spin Hall effect during heat treatment. The wiring layer 11 can have a structure in which the content of the additive element X gradually changes from the bottom of the wiring layer 11 toward the upper magnetization free layer 14 within the above-mentioned preferred range, i.e., a composition gradient structure. More preferably, the content of the additive element X gradually decreases from the bottom of the wiring layer 11 toward the upper magnetization free layer 14. When the wiring layer 11 contains tungsten (W) and the element NM but does not contain the metal element M, the NM content is preferably 5 at% or more and 50 at% or less to maintain the amorphous structure of the wiring layer 11. When the wiring layer 11 contains tungsten (W), the element NM, and the metal element M, the NM content of the added element X is preferably 10 at% or more, preferably 15 at% or more, and 50 at% or less, preferably 45 at% or less, to increase the spin Hall angle. Furthermore, to maintain the amorphous structure during heat treatment, the NM content in the WX alloy film is preferably 5 at% or more. FIG2 is an explanatory diagram illustrating the operation of a magnetic element according to one embodiment. The magnetic element is used as an example of a magnetic memory. Referring to FIG2 , the magnetic element 10 comprises a wiring layer 11, a cylindrical laminate 12 located on the wiring layer 11, and an electrode cover layer 13. The wiring layer 11 is provided with two terminals 11a and 11b located at both ends of the direction in which the pulse current flows, and the electrode cover layer 13 is provided with a terminal 13a. When the magnetization direction of the magnetization free layer 14 of the laminate 12 is reversed (for example, when writing information), a current pulse flows from one terminal 11a or 11b to the other. The current pulse flowing in the wiring layer 11 generates a spin current that flows perpendicularly to the direction of flow and flows upward in the laminate 12. The spin current acts on the magnetization of the magnetization free layer 14, causing the magnetization direction to reverse. In this way, when information is written into the magnetization free layer 14 of the magnetic memory 10, when the magnetization direction of the magnetization free layer 14 is the same direction as the magnetization direction of the reference layer 16 (i.e., parallel), a lower magnetoresistance value is displayed in the binary of the stack 12, and when the magnetization direction of the magnetization free layer 14 is different from the magnetization direction of the reference layer 16 (i.e., antiparallel), a larger magnetoresistance value is displayed in the binary of the stack 12. When reading data, a pulse current flows from terminal 13a through electrode cover layer 13 and laminate 12, reaching, for example, terminal 11b. The magnitude of the voltage drop between terminals 13a and 11b is used to determine the magnetization direction of magnetization free layer 14. The read operation is similar to conventional spin-transfer torque-based magnetic memory (STT-MRAM). FIG3 is a schematic diagram of the structure of another embodiment of a magnetic element. Referring to FIG3 in conjunction with FIG1 , the magnetic element 20 comprises a wiring layer 11, a laminate 22, and an electrode cover layer 13. The laminate 22 is located on the wiring layer 11 and has a magnetic tunneling junction. The electrode cover layer 13 is located on the laminate 22. The laminate 22 is laminated in the order of a magnetization free layer 14, a tunneling barrier layer 15, and a reference layer 26 from the wiring layer 11 side, forming a magnetic tunneling junction. The reference layer 26 is laminated in the order of a first ferromagnetic layer 31, a nonmagnetic spacer layer 32, a second ferromagnetic layer 33, and an antiferromagnetic layer 34 from the tunneling barrier layer 15 side. The structure of the magnetic element 20 is the same as that of the magnetic element 10 shown in FIG1 , except for the different structure of the reference layer 26. Reference layer 26 has a laminated ferrimagnetic (SAF, artificial antiferromagnetic) structure, formed by antiferromagnetically coupling a first ferromagnetic layer 31 and a second ferromagnetic layer 33 via a nonmagnetic spacer layer 32. The first ferromagnetic layer 31 and the second ferromagnetic layer 33 are antiferromagnetically coupled, thereby substantially (substantially) fixing their magnetization directions. Furthermore, antiferromagnetic layer 34 is exchange-coupled with the second ferromagnetic layer 33 and applies an exchange bias magnetic field to the second ferromagnetic layer 33, thereby substantially fixing the magnetization direction of the second ferromagnetic layer 33 and, as a result, fixing the magnetization direction of the first ferromagnetic layer 31. Antiferromagnetic layer 34 is not essential. The thickness of the first ferromagnetic layer 31 and the second ferromagnetic layer 33 is set to 1 nm to 5 nm, for example, and ferromagnetic materials such as Co—Fe, Co—Fe—B, Fe—B, Co, and CoPt laminate films can be used. The thickness of the non-magnetic spacer layer 3 is set to, for example, 0.2 nm to 2 nm, and non-magnetic materials such as V, Cr, Cu, Mo, Ru, Rh, Ta, W, Re, and Ir can be used. The thickness of the antiferromagnetic layer 34 is set to, for example, 5 nm to 10 nm, and an antiferromagnetic material such as Ir—Mn or Pt—Mn can be used. Figures 4A and 4B are schematic diagrams of magnetic elements according to variations of Figures 1 and 3. Referring to Figures 4A and 4B, magnetic elements 40 and 50 have a thin film 41 formed between the wiring layer 11 and the magnetization free layer 14. This thin film 41 includes a material other than the elements constituting the wiring layer 11. Otherwise, the magnetic element 10 shown in Figure 1 and the magnetic element 20 shown in Figure 3 have the same structure. The film 41 preferably includes at least one metal element or its oxide selected from the group consisting of Ti, V, Cr, Co-O, Fe-O, Ni-O, Cu, Zr, Nb, Pd, Hf, Ir, Pt, and Au, which can improve the magnetic properties of the magnetization free layer 14, such as reducing the anisotropic magnetic field, suppressing the magnetic damping constant, and obtaining a larger spin Hall angle. In magnetic elements 10, 20, 40, and 50, when a pulse current flows between terminals 11a and 11b of wiring layer 11, a flow of spin angular momentum (i.e., spin current) is generated in a direction orthogonal to the current direction. This acts on the magnetization of the magnetization free layer 14 of the laminate 12, generating a torsional force that rotates the magnetization. This so-called spin-orbit torque is generated. This torsional force rotates the magnetization of the magnetization free layer 14 and tends to an energetically stable direction. When the magnetization of the magnetization free layer 14 is energetically stable, parallel to the film surface, in the in-plane direction, if a pulse current flows through wiring layer 11, the magnetization may rotate 180 degrees (i.e., reverse) depending on the polarity of the pulse current and the direction of the magnetization, sometimes pointing in another in-plane direction, and sometimes maintaining its in-plane direction. The wiring layer 11 of this embodiment is formed of an amorphous alloy of tungsten (W) and an added element X, thereby increasing the spin Hall effect and enabling the magnetization of the magnetization free layer 14 to be reversed with low power. When the magnetization of the magnetization free layer 14 of the magnetic elements 10, 20, 40, and 50 is stabilized perpendicular to the film plane, i.e., in the plane direction, a spin-orbit torque-type torsional force acts on the magnetization of the magnetization free layer 14, causing the magnetization direction to reverse. The following is an example of the structure of the magnetic element 10 in which the magnetization free layer 14 is perpendicular to the film plane. The thickness of each layer is within a preferred range. The example structure is described in the order in which the layers are stacked on the substrate. {Configuration Example 1} Wiring layer 11: WX alloy, thickness 3~20nm Magnetization free layer 14: Co-Fe-B, thickness 1-2 nm Tunneling barrier layer 15: MgO, thickness 0.8~2.0nm The reference layer 26 is the following laminate. ‧First ferromagnetic layer 31: Co-Fe-B, thickness 1-2 nm ‧Non-magnetic spacer layer 32: W, thickness 0.15nm Second ferromagnetic layer 33: Co / Pt multilayer film, thickness 2~5nm ‧Non-magnetic spacer layer: Ru or Ir, thickness 0.4~0.6nm or 0.8~1.2nm ‧Third ferromagnetic layer: Co / Pt multilayer film, thickness 2~5nm Electrode covering layer 13: Ru, Ta or Pt, thickness 3~20nm {Example 2} Wiring layer 11: WX alloy, thickness 3~20nm Thin film: Hf, Mo or Ti, thickness 0.5~1.0nm Magnetization free layer 14: Co-Fe-B, thickness 1-2 nm Tunneling barrier layer 15: MgO, thickness 0.8~2.0nm The reference layer 26 and the electrode covering layer 13 are the same as those in the above-mentioned structural example 1. The WX alloy of the wiring layer 11 may be a WX alloy film or a W / X multilayer film as described in the manufacturing method below. In the above-mentioned Configuration Examples 1 and 2, the magnetization of the first ferromagnetic layer 31 is perpendicular to the film surface due to the exchange interaction of the Co / Pt multilayer film of the reference layer 26, and the magnetization of the magnetization free layer 14 is perpendicular to the film surface due to this action. In the above-described configuration examples 1 and 2, the magnetization free layer 14 is made of Co-Fe-B, but this is not limiting. For example, Fe-B may be used. Furthermore, when the magnetization of the magnetization free layer 14 in the magnetic element 10 is stable perpendicular to the film plane, that is, perpendicular to the plane direction (z-direction or -z-direction), a bias magnetic field may be applied to the magnetization free layer 14 in the direction (x-direction) or the opposite direction (-x-direction) of the pulse current flowing through the wiring layer 11. This causes the magnetization of the magnetization free layer 14 to tilt from the z-direction or -z-direction toward the x-direction or -x-direction by a certain angle (e.g., 5°). This allows the magnetization of the magnetization free layer 14 to reverse from a direction perpendicular to the plane direction (e.g., the z-direction) to the opposite direction (e.g., the -z-direction), or reverse in the opposite direction to the above-described method, depending on the direction of the pulse current flowing through the wiring layer 11. [Method for manufacturing magnetic element] FIG5 is a flow chart of a method for manufacturing a magnetic element according to an embodiment. Referring to FIG5 in conjunction with FIG1 and FIG3 , a method for manufacturing a magnetic element according to an embodiment will be described. First, a substrate is prepared ( S100 ). The substrate is made of a non-magnetic material, such as a silicon substrate, a silicon substrate with a thermal oxidation pattern, or a gallium arsenide substrate, and is not particularly limited. Next, the wiring layer 11 is formed on the substrate (S10). Specifically, a material source containing tungsten and an additive element X is prepared, such as a sputtering target containing tungsten W and the additive element X. The wiring layer 11 is formed by sputtering or the like (the wiring layer 11 formed in this manner is also referred to as a "WX alloy film"). To maintain the amorphous structure of the wiring layer 11, the additive element X preferably includes at least one element selected from boron (B), phosphorus (P), and carbon (C) (hereinafter also referred to as "element NM"). To increase the spin Hall angle, the additive element X preferably includes at least one metal element selected from Ta and Mo in addition to at least one element selected from boron (B), phosphorus (P), and carbon (C) (element NM). To increase the spin Hall angle, the content of the additive element X in the material source containing tungsten and the additive element X is preferably 5 at% or more, more preferably 10 at% or more, and 50 at% or less, more preferably 40 at% or less. When the material source includes tungsten (W) and the element NM but does not include the metal element M, the content of the element NM is preferably 5 at% or more and 50 at% or less to maintain the amorphous structure of the wiring layer 11. When the material source includes tungsten (W), the element NM, and the metal element M, the content of the element NM in the added element X is preferably 10 at% or more, more preferably 15 at% or more, and 50 at% or less, more preferably 45% or less to maintain the amorphous structure of the formed magnetic element during heat treatment. Furthermore, in the WX alloy film, the content of the element NM is preferably 5 at% or more to maintain the amorphous structure during heat treatment. When sputtering is used to form the wiring layer 11, the substrate temperature is preferably between 1°C and 50°C to achieve an amorphous structure. The ambient gas used is, for example, an inert gas, preferably krypton. To achieve a large spin Hall angle, the thickness of the wiring layer 11 is preferably between 3nm and 20nm. In S110, as an alternative method for forming the wiring layer 11, power may be supplied to both a tungsten W sputtering target and a sputtering target of an additive element X, thereby simultaneously sputtering sputtered particles from the two sputtering targets to form the wiring layer 11 (so-called co-sputtering). In this way, the wiring layer 11 comprising an amorphous alloy of tungsten and the additive element X can be formed. Furthermore, the wiring layer 11 comprising an amorphous alloy of tungsten and the additive element X can be formed by alternately stacking tungsten sputtered particles and additive element X sputtered particles. 6A and 6B are conceptual diagrams illustrating alternative methods for forming the wiring layer 11. FIG6A is a conceptual diagram illustrating co-sputtering using a tungsten W sputtering target and a sputtering target of an additive element X. FIG6B is a conceptual diagram illustrating alternate sputtering using a tungsten W sputtering target and a sputtering target of an additive element X. Referring to Figure 6A , power is supplied to two sputtering targets, one containing tungsten and the other containing the additive element X. This causes the tungsten and X-containing sputtering particles to simultaneously sputter (co-sputter) and accumulate, thereby forming a WX alloy film. The composition ratio of the WX alloy film is controlled by adjusting the sputtering power supplied to each sputtering target. Referring to Figure 6B , tungsten layers and additive element X layers are alternately laminated n times (the wiring layer 11 thus formed is also referred to as a "W / X multilayer film"). To maintain an amorphous structure during heat treatment, the thickness of each tungsten layer and additive element X layer is preferably 1.0 nm or less. The ratio of the thickness of one additive element X layer to the sum of the thicknesses tw of one tungsten layer and tx of one additive element X layer (i.e., tx / (tw + tx)) is preferably 0.10 or more and 0.50 or less. The number of repeated laminations, n, is preferably 3 or more and 20 or less. Furthermore, although Figure 6 clearly depicts the boundary between the tungsten layer and the additive element X layer, the thickness of each tungsten layer and additive element layer in the laminated wiring layer 11 is very thin and amorphous, making it difficult to measure the thicknesses tw and tx of each layer. The thicknesses tw and tx of each layer are preferably controlled by using a film thickness monitor to determine the deposition rate and control the deposition time. Returning to FIG5 , the laminated bodies 12 and 22 having magnetic tunneling junctions are then formed on the wiring layer 11 ( S120 ). Specifically, for example, by sputtering, in the example of the magnetic element 10 shown in FIG1 , the magnetization free layer 14 , the tunneling barrier layer 15 , and the reference layer 16 are deposited on the wiring layer 11 in this order. In the example of the magnetic element 20 shown in FIG3 , the magnetization free layer 14 , the tunneling barrier layer 15 , the first ferromagnetic layer 31 of the reference layer 26 , the non-magnetic spacer layer 32 , the second ferromagnetic layer 33 , and the antiferromagnetic layer 34 are deposited on the wiring layer 11 in this order. Next, an electrode covering layer is formed ( S130 ). Specifically, a stack of Ta and Ru layers is formed on the stacked bodies 12 and 22 by sputtering, for example. Next, the magnetic element formed in S130 may be subjected to heat treatment (S140). Specifically, to improve the magnetic properties of the magnetization free layer 14, the reference layer 16, and the like, which serve as ferromagnetic layers, and to prevent crystallization of the wiring layer 11, the heat treatment temperature is preferably, for example, 300°C to 420°C. The heat treatment time is preferably 0.5 hours to 3 hours. The heat treatment may be continued while the magnetic element formed up to step S130 is being treated, or the heat treatment may be performed after being temporarily exposed to the atmosphere. Through the above steps, a magnetic element is formed. <Example 1> FIG7 is a diagram showing an example of structural analysis of the wiring layer of Example 1 of the magnetic element by thin film X-ray diffraction, and an example of the θ-2θ method of thin film X-ray diffraction. The graph of the wiring layer of Example 1 is shown with a solid line, while the graph of the wiring layer of the comparative example is shown with a dotted line. Example 1 is a structure in which Ta is sequentially stacked on a substrate. 80 B 20 layer (thickness 1 nm), W as the wiring layer 11 67.9 (Ta 82 B 18 ) 32.1 (thickness 10nm), Co-Fe-B as the magnetization free layer 14 (thickness 3nm), MgO as the tunneling barrier layer 15 (thickness about 2nm), Ta-O layer as the electrode cover layer 13 (thickness 2nm). The wiring layer of Example 1 uses W sputtering target and Ta 80 B 20 Sputtering target and forming film by co-sputtering. Tungsten W and Ta in the wiring layer 82 B 18 The composition ratio (67.9:32.1) is controlled by the sputtering power of each sputtering target. In addition, since the reference layer 16 does not affect the structure of the wiring layer, it is omitted. The remainder is the same as that of Example 1 except for the tungsten layer (crystalline) of the β phase (A15 structure) (thickness 5 nm). Referring to Figure 7 , the diffraction pattern of the wiring layer of Example 1 shows no diffraction peak in the 2θ range of 35° to 45°, but instead displays a broad halo pattern. Therefore, it is clear that the wiring layer of Example 1 is amorphous. On the other hand, the wiring layer of Comparative Example 1 shows a diffraction peak near 41°, indicating that it is crystalline. The X-ray diffraction instrument used was the Malvern Panalytical X'Pert Pro model. Cu-Kα radiation was used as the X-ray source. Figure 8 shows an example of structural analysis of Example 1 using a transmission electron microscope (TEM). Figure 8(a) is a cross-sectional TEM image of Example 1. Figures 8(b) and 8(c) are nanobeam diffraction images of Region 1 and Region 2 of the wiring layer shown in Figure 8(a), respectively. Referring to FIG8(a), no crystal planes were observed in the wiring layer of Example 1, and no nanocrystals were found in the cross-sectional TEM image. Referring to FIG8(b) and FIG8(c), no clear disc-shaped diffraction images were observed in the nanobeam diffraction images of Regions 1 and 2 within the wiring layer of Example 1. These images indicate that the wiring layer of Example 1 is amorphous. The transmission electron microscope used was a JEOL Ltd. NEOARM atomic resolution analysis electron microscope, model: JEM-ARM200F. The nanobeam diffraction conditions were: camera length 0.8 m, acceleration voltage 200 kV, and beam diameter on the sample of approximately 5 nm. <Example 2> In Example 2, Ta is sequentially stacked on the substrate. 82 B 18 layer (thickness 1 nm), W as the wiring layer 11 100-y (Ta 82 B 18 ) y (thickness 5nm) (y=16, 22.9, 32.1, 42.4, 50.1, 65.6, 77.9, 100), Co-Fe-B (thickness 3nm) as the magnetization free layer 14, MgO (thickness about 2nm) as the tunneling barrier layer 15, and Ta-O layer (thickness 2nm) as the electrode cover layer 13. The fixed magnetization layer is omitted because its purpose is to measure the spin Hall effect. The wiring layer 11 is made of tungsten W sputtering target and Ta 80 B 20 The target is sputtered and a film is formed by co-sputtering. The tungsten and Ta in the wiring layer 11 82 B 18 The composition ratio (100-y:y) is controlled by sputtering power. The β-phase tungsten layer (crystalline) (thickness 5 nm) and other layer systems are the same as those in Example 2. Figure 9 shows the W 100-y (Ta 82 B 18 ) y Graph showing the spin Hall effect when forming the wiring layer of Example 2 of the magnetic element. FIG9(a) shows the spin current density per unit current density of the current flowing in the wiring layer relative to the composition of the wiring layer. ξ SHE Figure 9(b) shows the spin current density per unit magnetic field of the wiring layer relative to the composition of the wiring layer. ξ SHE The absolute value of spin current density ξ SHE The larger the absolute value of , the greater the spin Hall effect, allowing for spin injection into the free magnetization layer with a smaller current or electric field. The blackened circles (●) and blackened triangles (▲) in the figure represent Example 2, while the hollow circles (○) and hollow triangles (△) represent Comparative Example 2. 9 (a), the spin current density per unit current density of y in Example 2 is 16~60at% ξ SHE The absolute value of is about 20% or more, and when y is 16~40at%, it is higher than that of Comparative Example 2. 9 (b), the spin current density per unit magnetic field of y in Example 2 is 16~60at% ξ SHE The absolute value of 3 Ω -1 cm -1 ), and the smaller y is, the higher the amount of tungsten is. It can be seen that in Example 2, y is higher than in Comparative Example 2 when it is 16-40 at%. Spin current density ξ SHEIt is measured by using the magnetic damping modulation method of spin torque ferromagnetic resonance (for example, refer to the literature L. Liu et al, Phys. Rev. Lett. 106.036601 (2011)). ξ SHE An external magnetic field is applied to the surface of the magnetization free layer at a predetermined angle, causing the magnetization of the magnetization free layer to enter a state of magnetization precession through ferromagnetic resonance. A direct current is then passed through the wiring layer 11. The spin current flowing from the wiring layer 11 to the magnetization free layer 14 is measured based on the degree of modulation of the resonance line amplitude caused by the spin-orbit torque acting on the magnetization. More specific details are as follows. FIG10A is a schematic diagram of a spin current density measurement circuit. Referring to FIG10A , the measurement circuit transmits a DC current I through a T-type bias device 61. DC (Keysight, Model: B2902A) and microwave current I RF (Microwave generator Keysight, Model: 5173B EXG-Series) is applied to the thin wire element 62 after the laminated body of the measurement object has been shaped. Microwave current I RF The ferromagnetic resonance of the magnetized free layer is caused. The ferromagnetic resonance of the magnetized free layer is measured by the spin torque diode effect to determine the voltage V on the DC port side of the T-type bias device 61. FMR To conduct detection. RF Amplitude modulation is applied and a lock-in amplifier (Stanford Research, Model: SR830 DSP Digital Lock-in Amplifier) ​​is used to measure the voltage to increase the voltage V FMR The measurement accuracy. Figure 10B shows an example of a ferromagnetic resonance spectrum obtained by measuring the spin current density. The horizontal axis represents the external magnetic field applied in the in-plane direction. μ0H( μ0 is the magnetic permeability in vacuum), the vertical axis represents the voltage V FMR The black circles (●) represent the case where a direct current of +2 mA flows in the wiring layer, and the hollow circles (○) represent the case where a direct current of -2 mA flows in the wiring layer. 10B, the ferromagnetic resonance of the magnetization free layer is obtained according to the alternating current flowing through the wiring layer to obtain the rectified voltage V FMR , and according to V FMR The resonance line width W is obtained by looking at the spectral shape of the wave. A direct current I flows simultaneously with the alternating current. DC , and according to the DC current I DC The corresponding change in resonance linewidth ( W / I DC ) to find the spin current density per unit current density ξ SHE . The spin current density per unit current density mentioned above ξ SHE The absolute value of is calculated according to the following formula. Among them, in the above formula e. H, γ, f, Ms, d. φ、 H res 、 H demag 、 w、 t、 The η system is respectively the basic charge, Dirac constant, gyromagnetic ratio, frequency of input AC current (8 GHz), saturation magnetization of the magnetization free layer, film thickness of the magnetization free layer, in-plane angle of the external magnetic field applied in the long side direction of the fine wire element, resonant magnetic field of the magnetization free layer, effective antimagnetic field of the magnetization free layer 14, and fine wire width of the fine wire element (3 μm), the thickness of the wiring layer 11, and the current split ratio in the wiring layer 11. The spin current density per unit magnetic field ξ E SHE The absolute value of is obtained according to the following formula. in, ρ represents the resistivity of the wiring layer. <Example 3> In Example 3, Ta is sequentially stacked on the substrate. 82 B 18 layer (thickness 1 nm), W as the wiring layer 11 90 B 10 (5nm thick), Co-Fe-B as the magnetization free layer 14 (3nm thick), MgO as the tunneling barrier layer 15 (about 2nm thick), and Ta-O layer as the electrode cover layer 13 (2nm thick), and then heat treated at 350℃ for one hour. Since the fixed magnetization layer is used to measure the spin Hall effect, it is omitted. The wiring layer 11 is made of W. 90 B 10 sputtering target, and forming a film by sputtering. FIG11 shows the W 90 B 10 Graph showing the spin Hall effect when forming the wiring layer of Example 3 of the magnetic element. FIG11(a) shows the spin current density per unit current density of the current flowing through the wiring layer. ξ SHE Figure 11(b) shows the spin current density per unit magnetic field of the wiring layer. ξ SHE FIG11 shows Comparative Example 2 for comparison. 11 (a), the spin current density per unit current density of Example 3 is ξ SHE The absolute value of is about 31%, which is a high value equivalent to that of Comparative Example 2. Referring to FIG11(b), it can be seen that the spin current density per unit magnetic field of Example 3 is ξ SHE The absolute value of 3 Ω -1 cm -1 ), and showed high values ​​equivalent to those of Comparative Example 2. From these results, it can be seen that Example 3 forms the wiring layer using a material with B added to W, thereby achieving excellent heat resistance during heat treatment and a higher spin Hall angle. <Example 4> FIG12 shows the W 100-y (Mo 80 B 20 ) y Graph showing the spin Hall effect when forming the wiring layer of Example 4 of the magnetic element. FIG12(a) shows the spin current density per unit current density of the current flowing in the wiring layer relative to the composition of the wiring layer. ξ SHE Figure 12(b) shows the spin current density per unit magnetic field of the wiring layer relative to the composition of the wiring layer. ξ SHE Graph of the absolute value of . In the fourth embodiment, W as the wiring layer 11 is sequentially stacked on the substrate. 100-y (Mo 80 B 20 ) y (8nm thickness) (y = 10, 14, 20, 25, 30, 35), Co-Fe-B (3nm thickness) as the magnetization free layer 14, MgO (about 2nm thickness) as the tunneling barrier layer 15, and Ta-O (2nm thickness) as the electrode cover layer 13 for the measurement of the spin Hall effect. The fixed magnetization layer is omitted. The wiring layer 11 is made of a co-sputtered tungsten W sputtering target and Mo 80 B 20 The tungsten and Mo of the wiring layer 11 are stacked in the form of sputtering targets. 80 B 20 The composition ratio (100-y:y) is controlled by the sputtering power of each sputtering target. 12 (a), the spin current density per unit current density of y in Example 4 is 10~35at% ξ SHE The absolute value is about 30% or more. 12 (b), the spin current density per unit electric field of y in Example 4 is 10~35at% ξ SHE The absolute value of 3 Ω -1 cm -1 ) and the smaller y is, the higher the amount of tungsten is. <Example 5> Example 5 is an example of a magnetic element in which the magnetization of the magnetization free layer is perpendicular to the film surface. In Example 5, the wiring layer 11 is sequentially stacked on the substrate by sputtering: W 67.9 (Ta 82 B 18 ) 32.1 (thickness 8nm), magnetization free layer 14: Fe 80 B 20 (thickness 1 nm), tunnel barrier layer 15: MgO (thickness about 1.5 nm), first ferromagnetic layer 31: (Fe 91 Co 9) 80 B 20 (thickness 1nm), non-magnetic spacer layer 32: W (thickness 0.2nm), second ferromagnetic layer 33: Co (thickness 0.4nm) / Pt (thickness 1nm) and Co (thickness 0.4nm) / Pt (thickness 0.6nm) multilayer film (layered three times) and Co (thickness 0.3nm), non-magnetic spacer layer: Ru (thickness 0.47nm), third ferromagnetic layer: Co (thickness 0.4nm) / Pt (thickness 0.6nm) and Co (thickness 0.24nm) / Pt (thickness 0.36nm) multilayer film (layered eight times), electrode cover layer 13: Pt (thickness 3nm) / Ru (thickness 5nm). In addition, tungsten W sputtering target and Ta 80 B 20 The sputtering targets are co-sputtered at a desired composition ratio to build up the wiring layer 11 . Figure 13 shows the magnetization curve of the magnetic element of Example 5. The magnetization curve was obtained by applying a magnetic field perpendicular to the film surface using a vibrating sample magnetometer (VSM, Tamagawa Manufacturing Co., Ltd., model TM-VSM-211483-HGC) and scanning between -0.4T and 0.4T. The horizontal axis represents the applied magnetic field, and the vertical axis represents the magnetization. Referring to Figure 13 , when the applied magnetic field is near 0T, the magnetization curve exhibits a roughly rectangular hysteresis. This indicates that the magnetization of the magnetic free layer of Example 5 is perpendicular to the film surface and that the magnetization is reversed. [Magnetic Memory] A magnetic memory system according to one embodiment has the same structure as the magnetic elements 10, 20, 40, and 50 of the aforementioned embodiments, that is, the same structure as the magnetic elements 10, 20, 40, and 50 shown in Figures 1, 3, 4A, and 4B. Specifically, the magnetic elements 10, 20, 40, and 50 can be used as magnetic memories and are respectively designated as magnetic memories 10, 20, 40, and 50. Referring to Figures 1 and 3, the magnetic memory system according to the embodiment uses the magnetization free layer 14 of the magnetic elements 10, 20, 40, and 50 shown in Figures 1, 3, 4A, and 4B as a recording layer. When writing information into magnetic memories 10, 20, 40, and 50, a pulse current flows between terminals 11a and 11b connected to wiring layer 11, causing a spin current to flow through laminate 12 and act on the magnetization of magnetization free layer 14. The magnetization direction of magnetization free layer 14 reverses according to the polarity of the spin current and the direction of the magnetization. This changes the magnetic resistance between terminal 13a connected to electrode cover layer 13 and either terminal 11a or terminal 11b, thereby recording information. Magnetic memories 10, 20, 40, and 50 achieve the same functional effects as the aforementioned magnetic elements 10, 20, 40, and 50. Furthermore, the manufacturing method for magnetic memories 10, 20, 40, and 50 is the same as that for the magnetic element previously described in FIG. 5 and its description. Embodiments 6 and 7 form embodiments as magnetic memories. <Example 6> In Example 6, W as the wiring layer 11 is formed on the substrate in sequence by sputtering. 67.9 (Ta 82 B 18 ) 32.1 film (thickness 8 nm), Co as the magnetization free layer 14 15 Fe 60 B 25 film (thickness 1.8nm), MgO film (thickness 1.0~1.8nm) as tunneling barrier layer 15, first ferromagnetic layer 31 as reference layer: Co-Fe-B film (thickness 2nm), non-magnetic spacer layer 32: W film (thickness 0.15nm), second ferromagnetic layer 33: Co 70 Fe 30 (thickness 2.0nm) / Ru(thickness 0.85nm) / Co 70 Fe 30 (thickness 2.5 nm) laminate, Ir as the antiferromagnetic layer 34 20 Mn 80 The electrode cover layer 13 is a laminate of Ru (3 nm thick) / Ta (1 nm thick) / Ru (1.5 nm thick) / Pt (2 nm thick). 67.9 (Ta 82 B 18 ) 32.1 Co-sputtered W and Ta films 80 B 20 The composition ratio (67.9:32.1) was controlled by the sputtering power of each sputtering target. <Example 7> In Example 7, W as the wiring layer 11 is formed on the substrate in sequence by sputtering. 67.9 (Ta 82 B 18 ) 32.1 film (thickness 8 nm), Co as the magnetization free layer 14 15 Fe 60 B 25 film (thickness 1.8nm), MgO film (thickness 1.0~1.8nm) as tunneling barrier layer 15, first ferromagnetic layer 31 as reference layer: Co-Fe-B film (thickness 2nm) / non-magnetic spacer layer 32: W film (thickness 0.15nm) / second ferromagnetic layer 33: Co 70 Fe 30 (thickness 2.0nm) / Ru(thickness 0.85nm) / Co 70 Fe 30The electrode cover layer 13 is a laminate of Ru (thickness 1.5 nm) / Ta (thickness 4 nm) / Ru (thickness 1.5 nm) / Pt (thickness 2 nm). 76 (Ta 80 B 20 ) 24 Co-sputtered W and Ta films 80 B 20 The composition ratio (76:24) is controlled by the sputtering power of each sputtering target. Figure 14 shows a cross-sectional transmission electron micrograph of Example 6 of the magnetic memory. Figure 14(a) shows a cross-sectional transmission electron micrograph of Example 6 as a whole, while Figure 14(b) shows a cross-sectional transmission electron micrograph of the wiring layer of Example 6. As shown in Figure 14(a), the reference layer exhibits a crystalline structure on its crystal plane. On the other hand, as shown in Figure 14(b), the atoms in the wiring layer are randomly arranged, forming an amorphous structure. FIG15 is a magnetoresistance curve of Example 6. FIG15(a) shows the magnetoresistance value R of the magnetic tunneling junction measured by scanning the applied magnetic field along the in-plane direction of the magnetization free layer of Example 6. MTJ 15 (b) shows the magnetoresistance curve of the magnetic tunneling junction measured by changing the magnitude of the pulse current flowing in the wiring layer of Example 6. MTJ The pulse width of the pulse current is set to 100 μ seconds. 15(a), when the applied magnetic field is scanned between -4mT and 4mT, the magnetoresistance curve of the magnetic tunneling junction of Example 6 changes from A→B→C→D→A. It can be seen that at B (2.6mT) and D (-1.6mT), the magnetization free layer 14 (Co 15 Fe 60 B 25 The magnetization direction of the free layer 14 (the recording layer) is reversed, and the magnetoresistance value changes to a low resistance value (13.9 kΩ) and a high resistance value (33.0 kΩ). This shows that information can be recorded by changing the magnetization direction of the free layer 14, that is, the recording layer. Referring to Figure 15(b), if the current density of the pulse current applied to the wiring layer 11 of Example 6 is -4.8×10 6A / cm 2 With 4.4×10 6 A / cm 2 When the magnetoresistance curve of the magnetic tunneling junction of Example 6 changes from E to F to G to H to E. 6 A / cm 2 ) and H(-2.7×10 6 A / cm 2 ), the magnetization free layer 14 (Co 15 Fe 60 B 25 The magnetization direction of the free layer 14 (the recording layer) is reversed, causing the magnetoresistance to change to a high resistance value (33.0 kΩ) and a low resistance value (13.9 kΩ). This shows that the pulse current applied to the wiring layer 11 can reverse the magnetization of the free layer 14, i.e., the recording layer, and thus record information. Figure 16 is a magnetoresistance curve of Example 7 of the magnetic memory. Figure 16 (a) shows the magnetoresistance value R of the magnetic tunneling junction measured by scanning the applied magnetic field along the in-plane direction of the magnetized free layer of Example 7. MTJ 16 (b) shows the magnetoresistance curve of the magnetic tunneling junction by changing the magnitude of the pulse current flowing through the wiring layer of Example 7. MTJ The pulse width of the pulse current is set to 100 μ seconds. 16(a), when the applied magnetic field is scanned between -4mT and 4mT, the magnetoresistance curve of the magnetic tunneling junction of Example 7 changes from A→B→C→D→A. It can be seen that in B (1.2mT) and D (-1.5mT), the magnetization free layer 14 (Co 15 Fe 60 B 25 The magnetization direction of the free layer 14 (the recording layer) is reversed, and the magnetoresistive value changes to a low resistance value (6.1 kΩ) and a high resistance value (14.1 kΩ). This shows that information can be recorded by changing the magnetization direction of the free layer 14, i.e., the recording layer. Referring to FIG16(b), if the current density of the pulse current applied to the wiring layer 11 of Example 7 is set to -8×10 6 A / cm 2 With 8×10 6 A / cm 2 When the magnetoresistance curve of the magnetic tunneling junction of Example 7 changes from E to F to G to H to E. 6 A / cm 2 ) and H(-4.3×10 6 A / cm 2 ), the magnetization free layer 14 (Co 15 Fe 60 B 25 The magnetization direction of the free layer 14 (the recording layer) is reversed, causing the magnetoresistance to change to a high resistance value (14.1 kΩ) and a low resistance value (6.1 kΩ). This shows that the pulse current applied to the wiring layer 11 can reverse the magnetization of the free layer 14, or recording layer, and thus record information. FIG17 is a graph for obtaining characteristic values ​​of Example 6 and Example 7. The horizontal axis of FIG17 is the pulse width of the pulse current applied to the wiring layer. τp divided by the reciprocal of the trial frequency 1 GHz The value obtained by τ0 ( τp / τ0). τ0 is set to 1ns. The vertical axis is the reversal current density j SW , which is the magnetization free layer 14 (Co 15 Fe 60 B 25 The density of the pulse current during the magnetization reversal of the film). The triangle marks (△, ▲) in the figure are Example 6, and the circle marks (○, ●) are Example 7. Reversal current density j SW and( τp / τ0) can be expressed by the following relationship. Among them, j c0It is equivalent to the threshold value of the intrinsic reversal current density and is an indicator of power saving operation. Δ is the thermal stability index of the magnetization free layer and is a thermal stability index indicating thermal stability. B is the Boltzmann constant, T is the measurement environment temperature, and in the measurements of Examples 6 and 7, it is room temperature (300K). Referring to FIG17 , it can be seen that the data points of Examples 6 and 7 can be well fitted to a straight line. Based on this straight line, j c0 and △ / (k B T). FIG18 is a graph showing the characteristic values ​​of Example 6 and Example 7. Referring to FIG18, the jc0 system of Example 6 and Example 7 is composed of a wiring layer. The thermal stability index is higher than that of Non-Patent Documents 5 and 6. Furthermore, the heat treatment temperatures are 360°C and 400°C, respectively, which are 100°C higher than those of Non-Patent Documents 5 and 6. This shows that Examples 6 and 7 have extremely excellent heat resistance during semiconductor manufacturing. <Example 8> Example 8 of the magnetic memory is an example of a case where the magnetization of the free layer is perpendicular to the film surface. Measurements of the anomalous Hall effect show that the magnetization of the free layer perpendicular to the film surface is reversed by the spin current of a pulse current applied to the wiring layer. In Example 8, W as the wiring layer 11 is formed on the substrate in sequence by sputtering. 67.9 (Ta 82 B 18 ) 32.1 film (thickness 8 nm), Fe as the magnetization free layer 14 80 B 20A laminate of a film (thickness 1.4 nm), an MgO film (thickness 1.0~1.2 nm) as a tunneling barrier layer 15, and Ta (thickness 3 nm) / Ru (thickness 3 nm) as an electrode cover layer 13. In Example 8, even if the reference layer is omitted, the phenomenon of magnetization free layer reversal can be observed by measuring the abnormal Hall effect. However, for magnetic memory, the reference layer is indispensable. In the measurement of the abnormal Hall effect, the in-plane direction of the magnetization free layer and the direction in which the wiring layer 11 extends is set as the x-direction, the direction in the same plane and perpendicular to the x-direction is set as the y-direction, and the film surface direction perpendicular to the magnetization free layer is set as the z-direction. The Hall coefficient is obtained by measuring the voltage in the y-direction. Figure 19 is a graph showing the abnormal Hall effect of Example 8 of the magnetic memory. Figure 19(a) shows the magnitude of the applied magnetic field per unit area relative to the applied magnetic field when the magnetic field (Hx) is scanned along the in-plane direction (x direction) of the magnetic free layer (dashed line) and when the magnetic field (Hz) is scanned along the direction perpendicular to the film surface of the magnetic free layer (z direction) (solid line). Magnetic moment of μ0H in m / S (mA). Referring to Figure 19(a), sweeping the magnetic field (Hx) along the in-plane direction (x-direction) of the magnetization free layer (dashed line) produces a curve that applies the magnetic field to the difficult axis of magnetization. Sweeping the magnetic field (Hz) along the perpendicular direction (z-direction) to the film plane of the magnetization free layer produces a curve that applies the magnetic field to the easy axis of magnetization. This indicates that the magnetization of the magnetization free layer is perpendicular to the film plane. Figure 19(b) shows the Hall coefficient curve when the applied magnetic field (Hz) is scanned perpendicular to the film surface (z-direction) of the magnetized free layer. Referring to Figure 19(b), when a magnetic field is applied perpendicular to the film surface and scanned, a curve with both high and low Hall coefficients is formed. This indicates that the magnetization of the magnetized free layer is oriented perpendicular to the film surface and its direction is reversed by the application of a magnetic field. FIG19(c) shows the Hall coefficient curve measured by varying the magnitude of the pulse current flowing through the wiring layer of Example 8, and applying a bias magnetic field of 10 mT in the in-plane direction (x-direction) of the magnetization free layer. By applying the bias magnetic field, the magnetization of the magnetization free layer is tilted from the z-direction to the x-direction in the xz plane. Referring to FIG19(c), when the current density of the pulse current applied to the wiring layer 11 of Example 8 is set to -1.7×10 11 A / cm 2 With 1.7×10 11 A / cm 2When the Hall coefficient curve of the magnetic memory of Example 8 changes between A→B→C→D→A, it can be seen that the magnetization direction of the magnetization free layer changes between B(1.16×10 11 A / cm 2 ) and D(-0.97×10 11 A / cm 2 ) is reversed and the Hall coefficient changes to 0.30Ω and -0.30Ω respectively. This shows that the magnetization of the free layer, ie, the recording layer, can be reversed by applying a pulse current to the wiring layer 11, and information can be recorded. FIG19(d) shows the Hall coefficient curves obtained by varying the magnitude of the pulse current flowing through the wiring layer of Example 8 and applying a 10 mT bias magnetic field in the in-plane direction (-x direction) of the magnetization free layer. By applying the bias magnetic field, the magnetization of the magnetization free layer is tilted from the z direction to the -x direction in the xz plane. Referring to FIG19(d), when the current density of the pulse current applied to the wiring layer of Example 8 is set at -1.7×10 11 A / cm 2 With 1.7×10 11 A / cm 2 When the Hall coefficient curve of the magnetic memory of Example 8 changes between F(1.25×10 11 A / cm 2 ) and H(-1.17×10 11 A / cm 2 ) is reversed and the Hall coefficient changes to -0.30Ω and 0.30Ω respectively. This shows that the pulse current applied to the wiring layer 11 can reverse the magnetization of the free layer, that is, the recording layer, and record information. [High-frequency oscillator] FIG20 is a schematic diagram of a high-frequency oscillator according to an embodiment. Referring to FIG20 , a high-frequency oscillator 60 according to an embodiment is composed of a wiring layer 11 and a magnetization free layer 14, a tunneling barrier layer 15, a reference layer 66, and an electrode cover layer 13 stacked on the wiring layer 11. The reference layer 66 is formed by stacking a first ferromagnetic layer 31, a non-magnetic spacer layer 32, and a second ferromagnetic layer 33 from the tunneling barrier layer 15 side. The high-frequency oscillator 60 has the same structure as the magnetic elements 10 and 20 according to the above-mentioned embodiment, that is, the same structure as the magnetic elements 10 and 20 shown in FIG1 and FIG3. That is, the magnetic elements 10 and 20 can be used as the high-frequency oscillator 60. The high-frequency oscillator 60 is formed when the current I SHE When the current flows between the terminal 11a and the terminal 11b connected to the wiring layer 11, the torque caused by the magnetic damping generated during the precession motion and the spin-orbit torque caused by the spin current generated by the current flowing through the wiring layer 11 act on the magnetization of the magnetization free layer 14, causing the magnetization of the magnetization free layer 14 to self-oscillate. In this way, the high-frequency oscillator 60 oscillates the voltage between the terminal 13a and the terminal 11a or the terminal 11b, and generates an oscillation signal V OSC The high frequency oscillator 60 is manufactured using the same method as the magnetic element described in FIG. 5 . <Example 9> The high frequency oscillator of Example 9 is formed with the same film structure and formation conditions as the magnetic memory of Example 1. A direct current of -0.8 mA is passed through the wiring layer 11 to measure the oscillation signal V OSC . FIG21 is an oscillation signal V of the high frequency oscillator of Example 9 OSC The horizontal axis is the frequency, and the vertical axis is the oscillation signal V OSC Referring to FIG21 , it can be seen that the oscillation signal V of Example 9 OSC Contains a dominant wavelength component of 1.26 GHz. While preferred embodiments of the present invention have been described in detail above, the present invention is not limited to the specific embodiments, and various modifications and alterations can be made within the scope of the present invention described in the claims. This application claims priority based on Japanese Patent Application No. 2023-164022 filed on September 26, 2023, and Japanese Patent Application No. 2023-212929 filed on December 18, 2023. The present application incorporates all the contents disclosed in the specifications and drawings of these Japanese Patent Applications. 10: Magnetic components 11: Wiring layer 11a, 11b: Terminals 12: Laminated body 13: Electrode covering layer 13a:Terminal 14: Magnetization free layer 15: Tunneling barrier layer 16: Reference layer

Claims

1. A magnetic element comprising: an amorphous wiring layer comprising tungsten and an additive element X; and a laminated body on the wiring layer having a magnetic tunneling interface; wherein the wiring layer is a multilayer film structure consisting of an alternately laminated first layer comprising tungsten and a second layer comprising the aforementioned additive element X, and wherein, during X-ray diffraction, a halo pattern is displayed in the range of 2θ being 35° to 45°; and the film thicknesses of the aforementioned first layer and the aforementioned second layer are both 1.0 nm or less.

2. The magnetic element as described in claim 1, wherein, The content of the aforementioned added element X in the wiring layer is between 5 at% and 50 at%.

3. The magnetic element as described in claim 1, wherein, The aforementioned added element X is an element NM that includes at least one of B, P and C.

4. The magnetic element as described in claim 3, wherein, The content of the aforementioned element NM in the aforementioned wiring layer is more than 5 at% and less than 50 at%.

5. The magnetic element as described in claim 1, wherein, The aforementioned added element X series includes at least one metallic element M selected from Ta and Mo, and at least one element NM selected from B, P, and C.

6. The magnetic element as described in claim 5, wherein, The content of the aforementioned element NM in the aforementioned added element X of the aforementioned wiring layer is more than 10 at% and less than 50 at%.

7. The magnetic element as described in claim 1, wherein, The stacked system having the aforementioned magnetic tunneling interface includes a magnetized free layer; when the magnetic field is not applied from outside the magnetic element, the magnetization direction of the aforementioned magnetized free layer is parallel or perpendicular to the film surface of the magnetized free layer.

8. The magnetic element as described in claim 7, wherein, The aforementioned magnetized free layer system is formed directly on the aforementioned wiring layer, or it is formed on the aforementioned wiring layer through a thin film containing a material other than the aforementioned wiring layer.

9. The magnetic element as described in claim 8, wherein, The aforementioned thin film system contains at least one metal element or oxide selected from Ti, V, Cr, Co-O, Fe-O, Ni-O, Cu, Zr, Nb, Pd, Hf, Ir, Pt, and Au.

10. A magnetic memory having the magnetic element described in any one of claims 1 to 9.

11. A high-frequency oscillator comprising the magnetic element described in any one of claims 1 to 9.

12. A method for manufacturing a magnetic element, comprising: a step of forming a wiring layer having an amorphous structure, wherein the wiring layer is formed using a material source containing tungsten and an additive element X; and a step of forming a multilayer having a magnetic tunneling interface on the wiring layer; wherein in the step of forming the wiring layer, a first material source containing tungsten and a second material source containing the aforementioned additive element X are alternately released and deposited to form a multilayer film structure in which a first layer containing tungsten and a second layer containing the additive element X are alternately deposited; the thicknesses of the first layer and the second layer are both 1.0 nm or less.

13. A method for manufacturing a magnetic element as described in claim 12, wherein, The film thickness ratio of the aforementioned second layer to the sum of the film thicknesses of the aforementioned first layer and the aforementioned second layer, i.e., film thickness ratio = (film thickness of the aforementioned second layer) / {(film thickness of the aforementioned first layer) + (film thickness of the aforementioned second layer)}, is 0.10 or more and 0.50 or less.

14. A method for manufacturing a magnetic element as described in claim 12, wherein, In X-ray diffraction, the aforementioned wiring layer system displays a halo pattern in the range of 2θ, which is 35° to 45°.

15. A method for manufacturing a magnetic element as described in claim 12, wherein, The aforementioned added element X includes at least one element NM from B, P and C.

16. A method for manufacturing a magnetic element as described in claim 12, wherein, The aforementioned added element X series includes: at least one metallic element M selected from Ta and Mo, and at least one element NM selected from B, P and C.

17. A method for manufacturing a magnetic element as described in claim 12, wherein, In the step of forming the aforementioned wiring layer, a first material source containing tungsten and a second material source containing the aforementioned additive element X are used.

18. A method for manufacturing a magnetic element as described in claim 17, wherein, In the step of forming the aforementioned wiring layer, the respective constituent elements are released and deposited simultaneously or alternately from a first material source containing tungsten and a second material source containing the aforementioned additive element X to form the wiring layer.

19. A method for manufacturing a magnetic memory, comprising: a method for manufacturing the magnetic element described in any one of claims 12 to 18.

20. A method for manufacturing a high-frequency oscillator, comprising: a method for manufacturing the magnetic element described in any one of claims 12 to 18.

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