Substrate processing apparatus, substrate processing method, semiconductor device manufacturing method and process

Abstract

The present invention provides a technique for suppressing the adhesion of foreign matter to a substrate. have: The processing container includes a first space inside and a second space located above the aforementioned first space; The mounting portion for placing a substrate; A drive unit that drives the aforementioned mounting unit; A first supply system that controls the supply of the first gas into the aforementioned processing container; A second supply system that controls the supply of a second gas with a molecular structure different from the first gas to the aforementioned processing container; and The control unit is configured to control the aforementioned drive unit, the aforementioned first supply system, and the aforementioned second supply system, so that they operate sequentially: (a) Processing of supplying the first gas to the substrate in the first space; (b) The process of arranging the aforementioned substrate within the aforementioned second space; and (c) Processing of supplying the aforementioned second gas to the aforementioned substrate within the aforementioned second space.

Description

Technical Field

[0001] This case relates to substrate processing apparatus, substrate processing method, and manufacturing method and procedure for semiconductor devices. Prior Technology

[0002] As one of the substrate processing steps (semiconductor device manufacturing steps), there are cases where gases are supplied to the substrate to assist in substrate processing by modifying the substrate surface and to form films on the substrate surface. (See, for example, Patent Document 1) Previous technical documents Patent documents

[0003] Patent Document 1: Japanese Patent Application Publication No. 2022-148256 Summary of the Invention

[0004] (The problem that the invention aims to solve) This case relates to providing a technology that can suppress the adhesion of foreign matter to a substrate. (Methods used to solve problems)

[0005] According to one aspect of this case, a technology with the following configuration can be provided. The processing container includes a first space inside and a second space located above the aforementioned first space; The mounting portion for mounting the substrate; A drive unit that drives the aforementioned mounting unit; A first supply system that controls the supply of the first gas into the aforementioned processing container; A second supply system that supplies a second gas with a molecular structure different from the first gas into the aforementioned processing container; and The control unit is configured to control the aforementioned drive unit, the aforementioned first supply system, and the aforementioned second supply system, so that they operate sequentially: (a) The process of supplying the first gas to the substrate within the first space; (b) The process of arranging the aforementioned substrate within the aforementioned second space; and (c) Processing of supplying the aforementioned second gas to the aforementioned substrate within the aforementioned second space. [The effects of the invention]

[0006] According to this case, foreign matter can be prevented from adhering to the substrate. Simple Explanation of the Diagram

[0007] [Figure 1] is a schematic cross-sectional view of the processing container of the substrate processing apparatus in an embodiment, showing the case where the wafer is set to the first position. [Figure 2] is a schematic cross-sectional view of the processing container of the substrate processing apparatus in an embodiment, showing the case where the wafer is set in the second position. [Figure 3] is a diagram showing a schematic configuration example of the gas supply unit in an embodiment. [Figure 4] is a block diagram of the controller and its surrounding components in the implementation form. [Figure 5] is a flowchart of the entire substrate processing in the implementation mode. [Figure 6] is a cross-sectional view of the processing container of another type of substrate processing device. Implementation

[0008] The following description will primarily refer to Figures 1 through 6 to illustrate one aspect of this invention. Furthermore, the figures used in the following description are schematic representations, and the dimensional relationships and ratios of the elements shown in the figures may not necessarily correspond to reality. Also, the dimensional relationships and ratios of the elements in multiple figures may not be consistent with each other. Furthermore, elements substantially identical to those described in Figure 1 are given the same symbols, and their descriptions are omitted. Moreover, unless otherwise stated in the specification, each element is not limited to one and may exist in multiples.

[0009] (1) Substrate processing device As shown in Figure 1, the substrate processing apparatus 100 includes a processing container 201. The processing container 201 is constructed of a metal material such as aluminum (Al) or stainless steel (SUS). Inside the processing container 201, there is a first space 301 for processing a wafer 1, which serves as a substrate, using a first gas, and a second space 302 for processing the wafer 1 using a second gas. The second space 302 is formed above the first space 301. A partition 202 is provided between the first space 301 and the second space 302. The processing container 201 consists of an upper container 201a and a lower container 201b. Both the first space 301 and the second space 302 are located within the lower container 201b.

[0010] A first gas supply port (first supply section) 203 and a substrate transfer inlet 500 adjacent to the gate valve 501 are provided on the side of the first space 301 of the lower container 201b. The wafer 1 moves between the first space 301 and the transfer chamber (not shown) through this substrate transfer inlet 500. That is, the first space 301 is also the transfer space for transferring the wafer 1 between the inside and outside of the processing container 201.

[0011] A substrate support 232 for supporting the wafer 1 is disposed in the processing container 201. The substrate support 232 mainly includes a substrate stage 206 and a heater 207, which serves as a heat source, disposed within the substrate stage 206. The temperature of the heater 207 is controlled by a heater control unit 208 of a temperature control unit.

[0012] The substrate mounting stage 206 is supported by a drive shaft 205. The drive shaft 205 passes through the bottom of the processing container 201 and is further connected to a lifting mechanism 204 outside the processing container 201. The lifting mechanism 204, as a drive unit, mainly has a support shaft that supports the drive shaft 205 and an actuating part that raises, lowers, or rotates the support shaft. The actuating part has, for example, a lifting mechanism including a motor for raising and lowering and a gear for rotating the support shaft. By actuating the lifting mechanism 204, the drive shaft 205 and the substrate mounting stage 206 are raised and lowered, and the substrate mounting stage 206 can raise and lower the wafer 1 placed on it (on the substrate mounting surface).

[0013] As shown in Figure 1, during the transport of wafer 1, the substrate mounting stage 206 lowers the substrate mounting surface to a first position opposite the substrate loading inlet 500. Then, at this first position, wafer 1 is processed using a first gas. Furthermore, at this first position, the first space 301 and the second space 302 are not separated. Then, during the processing of wafer 1 using a second gas, as shown in Figure 2, wafer 1 rises to a second position within the second space 302. At this second position, the first space 301 and the second space 302 may separate by the upper surface of the substrate mounting stage 206 contacting the partition 202.

[0014] A second gas supply port (second supply section) 209 is provided above the second space 302, that is, in the upper container 201a. Purge gas for the second gas and the third gas is supplied from the second supply section 209 simultaneously or at different times.

[0015] The shower head 210, which connects to the second supply section 209 of the upper container 201a, has, for example, a disc-shaped dispersion plate. This dispersion plate has a plurality of through holes (second gas supply holes). The dispersion plate is configured to face the substrate mounting surface, and the through holes are provided throughout the dispersion plate. A buffer space 303 is used between the dispersion plate and the second supply section 209 to allow gas diffusion. Gas supplied to the shower head 210 is retained in the buffer space 303 and then supplied to the second space 302 via the second supply section 209 (the through holes in the dispersion plate). Alternatively, the shower head 210 can be considered as part of the second supply section 209.

[0016] (2) Gas supply system Next, Figures 1, 2 and 3 will be used to illustrate the gas supply system for supplying various gases to the processing container 201.

[0017] Furthermore, the first gas and the second gas are gases with different molecular structures. Also, in the following description, one or both of the first and second raw material gases may be referred to as the second gas. Moreover, in the following description, the third gas is an inert gas, for example, in the case of purification within the processing container 201.

[0018] In the first gas supply pipe 211, a first gas supply source 214, a mass flow controller (MFC) 213 of the flow control unit, and a valve 212 are sequentially arranged from the upstream side. The first gas supply pipe 211 is connected to the first supply unit 203 downstream of the valve 212. The first supply system 215 is mainly constituted by the first gas supply pipe 211, MFC 213, valve 212, and first supply unit 203. Alternatively, the first gas supply source 214 can be included in the first supply system 215. The first supply system 215 controls the supply of the first gas to the processing container 201 via the first supply unit 203.

[0019] In the first raw material gas supply pipe 216a, a first raw material gas supply source 219a, an MFC 218a, and a valve 217a are sequentially arranged from the upstream side. The first raw material gas supply pipe 216a is connected to the second supply section 209 downstream of the valve 217a. The first raw material gas supply system is mainly constituted by the first raw material gas supply pipe 216a, the MFC 218a, the valve 217a, and the second supply section 209. Alternatively, the first raw material gas supply source 219a can also be included in the first raw material gas supply system.

[0020] In the second raw material gas supply pipe 216b, a second raw material gas supply source 219b, an MFC 218b, and a valve 217b are sequentially arranged from the upstream side. The second raw material gas supply pipe 216b is connected to the second supply section 209 downstream of the valve 217b. The second raw material gas supply system is mainly constituted by the second raw material gas supply pipe 216b, the MFC 218b, the valve 217b, and the second supply section 209. Alternatively, the second raw material gas supply source 219b can also be included in the second raw material gas supply system.

[0021] In the following description, one or both of the first raw material gas supply system and the second raw material gas supply system may be referred to as the second supply system 220. The second supply system 220 controls the supply of the second gas to the processing container 201 via the second supply section 209.

[0022] In the third gas supply pipe 221, a third gas supply source 224, a mass flow controller (MFC) 223 of the flow control unit, and a valve 222 are sequentially arranged from the upstream side. The third gas supply pipe 221 is connected to the second supply unit 209 downstream of the valve 222. The third supply system 225 is mainly constituted by the third gas supply pipe 221, MFC 223, valve 222, and second supply unit 209. Alternatively, the third gas supply source 224 can be included in the third supply system 225. The third supply system 225 controls the supply of the third gas to the processing container 201 via the second supply unit 209.

[0023] Here, an inert gas supply system with the same configuration as the third supply system 225 can also be connected to the first gas supply unit 203, so that inert gas can be supplied from the first gas supply unit 203 into the first space 301.

[0024] (3) Exhaust system The lower container 201b of the processing container 201 is provided with an exhaust port 226a (first exhaust port) and an exhaust port 226b (second exhaust port). Exhaust port 226a is located on the side of the first space 301, and exhaust port 226b is located on the side of the second space 302. Exhaust pipes connecting exhaust ports 226a and 226b are respectively equipped with valves 227a and 227b, which converge downstream of each valve to form an exhaust pipe 228. Here, at least one of valves 227a and 227b can be an adjustable valve. Furthermore, the magnitude of gas conduction downstream of exhaust port 226a and downstream of exhaust port 226b can be controlled by adjusting the opening of these valves.

[0025] Furthermore, an Auto Pressure Controller (APC) 229 and a pressure monitor 230 are provided in the exhaust pipe 228 to control the pressure inside the processing container 201 to a predetermined level. The APC 229 is a valve body (not shown) with an adjustable opening, which adjusts the conduction of the exhaust pipe 228 according to the instructions from the controller 400. The exhaust system is constituted by the exhaust pipe 228, the pressure monitor 230, the valves 227a and 227b, and the APC 229. Alternatively, a vacuum pump 231 may be included in the exhaust system.

[0026] (4) Controller Figure 3 shows a block diagram of the control unit included in the board processing apparatus 100. The controller 400 is configured as a computer including a CPU (Central Processing Unit) 400a, RAM (Random Access Memory) 400b, a memory device 400c, and an I / O port 400d. The RAM 400b, memory device 400c, and I / O port 400d are configured to communicate with the CPU 400a via an internal bus 400e. The controller 400 is connected, for example, to an input / output device 401 configured as a touch panel or an external memory device 402.

[0027] The memory device 400c is constructed, for example, using flash memory or an HDD (Hard Disk Drive). Within the memory device 400c, control programs that control the operation of the board processing device or process formulas recording the board processing procedures or conditions described later are readablely stored. Furthermore, the formula is a high-level language that combines various programs of the board processing method described later to execute on the controller 400 and obtain a predetermined result. Compared to the control program, it is a high-level language. The control program and the formula are collectively referred to as programs. The memory device 400c also sequentially stores log information recording the operation or status of the device. RAM 400b is a memory area (working area) configured to temporarily store programs or data read by the CPU 400a. Additionally, the provision of programs or data to the computer and the provision of programs or data from the computer to external devices can also be performed without using external memory devices, utilizing communication means such as the Internet or dedicated lines.

[0028] I / O port 400d is a component of a board processing device that is connected to gate valve 501, lifting mechanism 204, APC 229, pressure monitor unit 230, vacuum pump 231, MFC 213, 218a, 218b, 223, valves 212, 217a, 217b, 222, 227a, 227b, heater control unit 208, etc.

[0029] CPU 400a is configured to read the control program from memory device 400c and, according to the input of operation instructions from input / output device 401, read the wafer prescription from memory device 400c. CPU 400a is configured to control the opening and closing of gate valve 501, the lifting action of lifting mechanism 204, the opening and closing of APC 229, the pressure detection action of pressure monitor unit 230, the ON / OFF control of vacuum pump 231, the flow adjustment action of MFC 213, 218a, 218b, and 223, the opening and closing action of valves 212, 217a, 217b, 222, 227a, and 227b, and the temperature control of heater 207 in heater control unit 208, etc., according to the content of the read prescription.

[0030] (5) Substrate processing method Figure 5 illustrates an example of a substrate processing method for forming a film on wafer 1 using a substrate processing apparatus 100, as a manufacturing process for a semiconductor device. In the following description, the operation of each component constituting the substrate processing apparatus is controlled by a controller 400.

[0031] When the term "wafer" is used in this specification, it refers to the wafer itself, or to a laminate of a wafer and a predetermined layer or film formed on its surface. When the term "surface of a wafer" is used in this specification, it refers to the surface of the wafer itself, or to the surface of a predetermined layer, etc., formed on the wafer. When, for example, the terms "forming a desired film on a wafer" or "depositing a film on a wafer" are used in this specification, it means forming a predetermined film directly on the surface of the wafer itself, or forming a predetermined film on a layer, etc., formed on the wafer. The term "substrate" is also synonymous with the term "wafer" in this specification.

[0032] The term "supply quantity" in this specification refers to the flow rate of the gas supplied, "pressure" refers to the pressure inside the reaction chamber, and "processing temperature" refers to the temperature of the wafer or the temperature of the processing container 201.

[0033] (Wafer loading: S1) As shown in Figure 1, the substrate stage 206 is lowered to the first position and the gate valve 501 is opened. Then, the conveying mechanism (not shown) places the wafer 1 onto the substrate stage 206 in the first space 301 via the substrate transfer inlet 500.

[0034] After the wafer 1 is placed on the substrate stage 206, power is supplied to the heater 207 inside the substrate stage 206 to heat the wafer 1. At this time, the output of the heater 207 is controlled according to the temperature information of the wafer 1 detected by the temperature sensor (not shown), thereby adjusting the temperature of the wafer 1.

[0035] (First gas supply process: S2) The first gas is supplied from the first supply system 215 to the wafer 1 in the first space 301 via MFC 213, valve 212, and the first supply section 203. At this time, the exhaust system is controlled so that the gas in the processing container 201 is mainly exhausted through the exhaust port 226a. After a predetermined time has elapsed since the start of the first gas supply, valve 212 is closed, thereby ending step S2. Furthermore, the first gas supply process accompanying the first gas supply to the surface of wafer 1 can be performed multiple times.

[0036] The above-mentioned treatment is carried out, for example, under the conditions of a first gas supply of 5 to 1000 sccm, a pressure of 133 to 13332 Pa, and a treatment temperature of 50 to 600°C.

[0037] Furthermore, the numerical ranges described in this specification, such as "5~1000 sccm", mean that the lower and upper limits are included within the range. Therefore, for example, "5~1000 sccm" means "between 5 sccm and 1000 sccm". The same applies to other numerical ranges.

[0038] At this time, the third supply system 225 can also be used to supply inert gas into the second space 302. In this case, an inert gas flow can be formed from the second space 302 toward the first space 301. This can prevent the first gas from flowing into the second space 302 or foreign matter caused by the first gas from adhering to the inner wall of the lower container 201b.

[0039] The first gas is, for example, an adsorption barrier gas that prevents the adsorption of the second gas onto wafer 1. Using the first gas, an inhibition layer for the formation of the barrier film is formed on at least a portion of the surface of wafer 1. The first gas is selected according to the film formed in the film deposition process described later. For example, when titanium tetrachloride (TiCl₄) gas is used as the first raw material gas, tungsten hexafluoride (WF₆) gas or similar fluorine-containing halide gas can be used as the first gas.

[0040] Inert gases include, for example, N2 gas, helium (He) gas, neon (Ne) gas, argon (Ar) gas, etc.

[0041] For example, compared to the deep side of the recess formed on wafer 1, a suppression layer can also be preferentially formed on the opening side of the recess. This allows for film formation suppression on the opening side of the recess and film formation promotion on the deep side of the recess during the film deposition process. Furthermore, a film (gap filler) embedded in at least a portion of the recess can also be formed.

[0042] Alternatively, an inhibition layer may be preferentially formed on the surface of a predetermined material, for example, formed on wafer 1, compared to other surfaces. In such a case, a film may be preferentially formed on other surfaces for the predetermined surface.

[0043] In step S2, in addition to the surface of wafer 1, at least a portion of the surface of objects within the first space 301 (e.g., the inner wall of the lower container 201b, the underside of the substrate stage 206, the drive shaft 205, etc.) can also be formed. This allows the reaction caused by the second gas on the surface of objects within the first space 301 to be suppressed when the second gas used for film formation in the second space 302 (described later) flows into the first space 301.

[0044] In step S2, it is ideal for the gas in the processing container 201 to be mainly exhausted through the exhaust port 226a. For example, it is ideal to open valve 227a and close valve 227b in such a way that the gas will not be exhausted from the exhaust port 226b. Alternatively, it is ideal for the gas conduction downstream of the exhaust port 226a to be greater than the gas conduction downstream of the exhaust port 226b. In such cases, since the first gas supplied to the first space 301 is less likely to flow into the second space 302, the adhesion of foreign matter caused by the first gas on the inner wall of the lower container 201b can be suppressed.

[0045] At this time, the controller 400 ideally controls the exhaust system or various gas supply systems in such a way that the pressure in the second space 302 is higher than the pressure in the first space 301. In this way, since it is not easy for the first gas to flow into the second space 302, the adhesion of foreign matter caused by the first gas to the inner wall of the lower container 201b can be further suppressed.

[0046] Here, we consider the case where the temperature of wafer 1 in step 2 is lower than the temperature of wafer 1 in step 4 (described later). When wafer 1 is at a low temperature, the gas used tends to adhere to the surface of wafer 1, thus improving the adsorption effect on the barrier gas. However, in step S4, the second space 302 is more likely to reach a high temperature than in step S2, so the first gas adsorbed in the second space 302 is more likely to detach. Therefore, foreign matter caused by the first gas is easily generated. The technology of this invention supplies the first gas and the second gas to wafer 1 separately in the first space 301 and the second space 302, so even in this case, the incorporation of foreign matter into wafer 1 can be effectively suppressed.

[0047] After the supply of the first gas in step S2 is completed, the third supply system 225 can also be used to supply inert gas into the processing container 201, and exhaust gas can be discharged from one or both of the exhaust ports 226a and 226b. In this way, since the processing container 201 will be purified, the movement or retention of the first gas remaining in the processing container 201 and foreign matter caused by the first gas into the second space 302 can be suppressed.

[0048] Alternatively, after the supply of the first gas in step S2 is completed, inert gas can be supplied from the first gas supply unit 203 into the first space 301, and exhaust can be performed from one or both of the exhaust ports 226a and 226b. In this way, the first space 301 will be purified, and the first gas remaining in the processing container 201 will not easily move to the second space 302.

[0049] (Wafer movement process: S3) The lifting mechanism 204 moves the wafer 1 to the second space 302 by raising the substrate mounting stage 206. Ideally, valves 227a and 227b should be opened at this time to vent the waste gas from the processing container 201. This suppresses the movement and retention of the first gas remaining in the processing container 201 and foreign matter caused by the first gas into the second space 302. Additionally, it is ideal to supply inert gas from the first supply section 203 into the processing container 201 at this time. This prevents the first gas remaining in the processing container 201 from easily moving into the second space 302.

[0050] Here, the partition 202 is configured to overlap with the substrate mounting stage 206 when viewed from the direction of movement of the substrate mounting stage 206. Therefore, the substrate mounting stage 206 rises to a position where a portion of the substrate mounting stage 206 overlaps with the partition 202 provided in the lower container 201b (the position shown in FIG. 2). This prevents residual first gas in the first space 301 and foreign matter caused by the first gas from flowing into the second space 302.

[0051] (Film forming process: S4) Next, by sequentially performing steps S41 to S44, step 4, which is a film-forming process (second gas supply process, second gas treatment process), is carried out.

[0052] Here, in step 4, the exhaust system is controlled so that the gas in the processing container 201 is mainly exhausted through the exhaust port 226b. For example, it is ideal to open valve 227b and close valve 227a. Alternatively, it is ideal to increase the gas conduction downstream of exhaust port 226b compared to the downstream side of exhaust port 226a. In this case, since the second gas supplied to the second space 302 is less likely to flow into the first space 301, the formation of a membrane in the first space 301 can be suppressed.

[0053] Furthermore, in step S4, inert gas can also be supplied from the first gas supply unit 203 into the first space 301. This creates a flow of inert gas from the first space 301 toward the second space 302, thereby suppressing the flow of the second gas from the second space 302 into the first space 301.

[0054] (First raw material gas supply process: S41) The first raw material gas is supplied to wafer 1 through the first raw material gas supply pipe 216a. At this time, the first raw material gas selectively adsorbs onto a portion of the surface of wafer 1, excluding the inhibition layer formed thereon. An inert gas may also be supplied from the third supply system 225 at this time. After a predetermined time has elapsed since the start of the second gas supply, valve 217a is closed, thereby ending step S41. The first raw material gas may, for example, be titanium tetrachloride (TiCl₄) gas.

[0055] (Purge gas supply process: S42) After step S41 is completed, exhaust is performed while both valves 227b and 227a are open, and inert gas is supplied from the third supply system 225 to purify the treatment container 201. This removes residual first raw material gas and foreign matter caused by the first raw material gas from the second space 302.

[0056] (Second raw material gas supply process: S43) Next, the second raw material gas is supplied to wafer 1 through the second raw material gas supply pipe 216b. At this time, the first raw material gas adsorbed on wafer 1 reacts with the second raw material gas to form the desired film. An inert gas can also be supplied simultaneously from the third supply system 225. After a predetermined time has elapsed since the start of the second gas supply, valve 217b is closed, thereby ending step S43. For example, ammonia (NH3) gas can be used as the supplied second raw material gas. In this case, when the first raw material gas is TiCl4 gas, a TiN film is formed.

[0057] (Purge gas supply process: S44) After step S43 is completed, exhaust is performed while both valves 227b and 227a are open, and inert gas is supplied from the third supply system 225 to purify the treatment container 201. This removes unreacted gas and reaction byproducts from the second space 302.

[0058] (Pre-ordered number of times implemented: S45) Perform a predetermined number of cycles (n times, where n is an integer greater than or equal to 1) including steps S41, S42, S43, and S44 to form a membrane of the desired thickness.

[0059] In step S4, as described above, since a portion of the substrate mounting stage 206 overlaps with the partition 202, the second space 302 and the first space 301 of the first gas supply process are blocked. This prevents residual first gas and foreign matter caused by the first gas from adhering to the film surface and the inner wall of the lower container 201b of the second space 302 during film formation. Furthermore, since the first space 301 is blocked, residual first gas and foreign matter caused by the residual first gas can be efficiently removed from the first space 301.

[0060] In addition, the above-mentioned film-forming process is carried out under conditions where both the first raw material gas and the second raw material gas are supplied at, for example, a supply rate of 100~1000 sccm, a pressure of 1333~13332 Pa, and a processing temperature of 50~600°C.

[0061] After step S4, while keeping valve 227b or both valves 227a and 227b open, exhaust gas is released from the second space 302 to remove unreacted gases and reaction byproducts remaining in the processing container 201. Then, valve 222 is opened to supply inert gas into the processing container 201. Alternatively, purification can be performed simultaneously with or after step S5, which will be described later.

[0062] (Wafer movement process: S5) The substrate mounting stage 206 is lowered by the lifting mechanism 204, so that the wafer 1 is moved to the first space 301.

[0063] (Wafer removal: S6) Open gate valve 501. Then, the conveying mechanism (not shown) moves wafer 1 to the outside of processing container 201 via substrate removal inlet 500.

[0064] According to this embodiment, in addition to the effects described above, one or more of the following effects can be achieved.

[0065] After the surface of wafer 1 is modified using the first gas, when wafer 1 is processed using the second gas within the same processing container 201, the first gas may adhere to objects within the processing container 201 (e.g., the inside of the supply section, the inner wall of the processing container 201, the underside of the substrate mounting stage 206, etc.). Furthermore, when the second gas is supplied to wafer 1, components from the first gas may be contained in the film. Additionally, due to the action of the first gas, the film formed on the surface of objects within the processing container 201 may peel off, and this peeled film may adhere to the surface of wafer 1. In other words, the yield of substrate processing may decrease due to the occurrence of such foreign matter.

[0066] After supplying the first gas to the wafer in the first space 301, the second gas is supplied to the wafer in the upper second space 302. This prevents the first gas from adhering to the surface of objects within the second space 302. Therefore, it prevents the first gas and foreign matter caused by the first gas from adhering to the wafer 1.

[0067] The flow of gas between the first space 301 and the second space 302 is suppressed by the partition 202. The first gas in the first space 301 does not easily flow into the second space 302. Therefore, the first gas remaining in the film forming process and foreign matter caused by the first gas do not easily adhere to the inner wall of the lower container 201b of the second space 302 and the wafer 1.

[0068] Furthermore, the second space 302 is positioned above the first space 301. In this way, even if the spaces performed in steps S2 and S4 are separated internally, the increase in the area (footprint) occupied by the substrate processing apparatus 100 in the horizontal direction can be suppressed.

[0069] Furthermore, the above description addresses the use of WF6 gas as the first gas, but this case is not limited to this. The same applies to the use of other gases such as chlorine trifluoride (ClF3), nitrogen trifluoride (NF3), hydrogen fluoride (HF), and fluorine (F2).

[0070] Similarly, the above description pertains to the use of TiCl4 gas as the first raw material gas in the second gas supply process, but this application is not limited to this. The same principle applies to the use of other gases, such as halogen-containing silicon tetrachloride (SiCl4), aluminum tetrachloride (AlCl4), zirconium tetrachloride (ZrCl4), hafnium tetrachloride (HfCl4), tantalum pentachloride (TaCl5), tungsten pentachloride (WCl5), molybdenum pentachloride (MoCl5), and tungsten hexachloride (WCl6).

[0071] Similarly, the above description pertains to the use of NH3 gas as the second raw material gas in the second gas supply process, but this case is not limited to this. The same principle applies when using a mixture of hydrazine (N2H4), water (H2O), oxygen (O2), hydrogen (H2), and O2—gases that react with the first raw material gas—as the reactant gas.

[0072] (Modified Example) FIG6 illustrates a modified substrate processing apparatus. The modified substrate processing apparatus includes a plasma generation unit that activates a second gas (one or both of the first and second raw material gases) within the second space 302 by means of a potential difference with the substrate mounting stage 206. The other configurations of the modified substrate processing apparatus are the same as those of the embodiment substrate processing apparatus.

[0073] Matching unit 602 and high-frequency power supply 603 are connected to electrode 604 provided inside upper container 201a, serving as activation unit 600 of plasma generation unit capable of supplying electromagnetic waves (high-frequency power or microwaves). Electrode 604 is configured to generate capacitively coupled plasma. Bias electrode 605 inside substrate stage 206 is connected to bias adjustment unit 606, allowing bias voltage adjustment. Additionally, impedance meter 601 can be provided between electrode 604 of activation unit 600 and high-frequency power supply 603.

[0074] Furthermore, the high-frequency power supply 603, matching device 602, and impedance meter 601 can transmit and receive signals with the controller 400. Based on the value measured by the impedance meter 601, the controller 400 can control the settings of the high-frequency power supply 603 and matching device 602.

[0075] In this modified example, the same effect as the above-described form can be achieved. Furthermore, in this modified example, the raw material gas is further decomposed and activated into a plasma state for reaction, thus forming a uniform film with excellent coating properties on the fine structure of wafer 1. In addition, since the processing temperature can be set lower, the influence of the processing temperature on the surface of wafer 1 can also be suppressed.

[0076] In this situation, since a voltage is applied between the upper container 201a and the substrate mounting stage 206, it is ideal that the substrate mounting stage 206 does not come into contact with objects other than the drive shaft 205 (such as the partition 202). Therefore, in step S4, the second gas flows into the first space 301, where a film-forming reaction easily occurs. According to the technology of this invention, in step S2, while the suppression layer is formed on the wafer 1, a suppression layer can also be formed on the surface of objects in the first space 301 (such as the inner wall of the lower container 201b or the gate valve 501). Therefore, the generation of foreign matter in the first space 301 can be suppressed.

[0077] The above-described forms or variations can be used in appropriate combinations. The processing procedures and conditions can, for example, be set to be the same as those of the above-described forms or variations.

[0078] In the above-described forms and variations, an example was described where an adsorption barrier gas was supplied as the first gas before step S4 (film formation process). In this case, the situation where an adsorption aid gas is supplied as the first gas in step 2 is also applicable. This adsorption aid gas assists the adsorption of the first raw material gas, which is a portion of the second gas supplied subsequently. That is, the adsorption aid gas assists the adsorption of at least a portion of the first raw material gas supplied subsequently onto the surface of wafer 1. In other words, it can assist in film formation (selective film formation) on at least a portion of the surface of wafer 1. Furthermore, based on the film-forming properties of the raw material gas in the film formation process, the adsorption aid gas can also be called a film-forming aid gas.

[0079] Alternatively, in step S4, either step S42 or step S44 can be omitted. That is, only one of the first raw material gas and the second raw material gas can be supplied to the second space 302 to process wafer 1. Furthermore, in step S4, step S43 can be performed simultaneously with at least a portion of step S41. That is, at least a portion of the first raw material gas and the second raw material gas can be supplied to the second space 302 simultaneously to process wafer 1. The same effect can be achieved in these cases.

[0080] The above-described form illustrates an example of forming a film using a single-piece substrate processing apparatus that processes one or more substrates at a time. This invention is not limited to the above-described form and variations; for example, it can also be applied to forming a film using a batch-type substrate processing apparatus that processes multiple substrates at a time, whether it is a hot-wall type processing furnace or a cold-wall type processing furnace.

[0081] When using such substrate processing apparatus, each processing procedure and processing condition can be used in the same manner as described above, and the same effect as described above can be achieved.

[0082] 201: Handling Containers 202: Partition 204: Lifting mechanism (drive unit) 206: Substrate mounting stage (mounting section) 215: The First Supply System 220: Second Supply System 400: Control Department

Claims

1. A substrate processing apparatus, characterized by comprising: a processing container having an interior including a first space and a second space located above the first space; a mounting portion for mounting a substrate; a drive portion for driving the mounting portion; a first supply system for controlling the supply of a first gas to the processing container; a second supply system for controlling the supply of a second gas with a molecular structure different from the first gas to the processing container; and a control unit configured to control the drive portion, the first supply system, and the second supply system such that the following are performed sequentially: (a) processing of supplying the first gas to the substrate in the first space; (b) processing of arranging the substrate in the second space; and (c) processing of supplying the second gas to the substrate in the second space, wherein in (a), an inhibition layer is formed on at least a portion of the surface of the substrate, which inhibits the processing of the second gas in (b).

2. The substrate processing apparatus as described in claim 1, wherein, The aforementioned first supply system includes a first supply unit disposed in the aforementioned first space, and the aforementioned second supply system includes a second supply unit disposed in the aforementioned second space. The aforementioned control unit further controls the aforementioned first supply system in (a) so that the aforementioned first gas is supplied through the aforementioned first supply unit, and in (c) further controls the aforementioned second supply system so that the aforementioned second gas is supplied through the aforementioned second supply unit.

3. The substrate processing apparatus as described in claim 1, wherein, It further includes an exhaust system and a first exhaust port that connects the aforementioned first space to the aforementioned exhaust system. The aforementioned control unit further controls the aforementioned exhaust system so that gas is discharged from the aforementioned first exhaust port in (a).

4. The substrate processing apparatus as described in claim 3, wherein, It also has a second exhaust port, which is different from the first exhaust port, and connects the second space to the exhaust system. The control unit further controls the exhaust system so that gas is discharged from the second exhaust port in (b).

5. The substrate processing apparatus as described in claim 4, wherein, The aforementioned control unit can further control the aforementioned exhaust system, such that the pressure in the aforementioned second space of (a) is higher than the pressure in the aforementioned first space of (a).

6. The substrate processing apparatus as described in claim 4, wherein, The aforementioned control unit can further control the aforementioned exhaust system such that: (1) in (a), the conduction of gas downstream of the aforementioned first exhaust port is greater than the conduction of gas downstream of the aforementioned second exhaust port, or (2) in (a), gas is not discharged from the aforementioned second exhaust port.

7. The substrate processing apparatus as described in claim 4, wherein, The aforementioned control unit can further control the aforementioned exhaust system, so that in (a) gas is discharged from the aforementioned second exhaust port.

8. The substrate processing apparatus as described in any one of claims 1 to 7, wherein, It also has a third supply system that supplies purge gas to the aforementioned second space. The aforementioned control unit can further control the aforementioned third supply system so that the aforementioned purge gas is supplied to the aforementioned second space in (a).

9. The substrate processing apparatus as described in any one of claims 1 to 7, wherein, It also has a temperature control unit that controls the temperature of the aforementioned substrate. The aforementioned control unit can further control the aforementioned temperature control unit so that the temperature of the aforementioned substrate in (a) is set to be lower than the temperature of the aforementioned substrate in (b).

10. The substrate processing apparatus as described in any one of claims 1 to 7, wherein, It also has an inlet and outlet, which is located in the aforementioned first space and is configured to allow the aforementioned substrate to move between the inside and outside of the aforementioned processing container.

11. The substrate processing apparatus as described in any one of claims 1 to 7, wherein, It also has a partition that inhibits the flow of gas between the aforementioned first space and the aforementioned second space.

12. The substrate processing apparatus as described in claim 11, wherein, The aforementioned partition is configured to overlap with a portion of the aforementioned mounting portion when viewed from the direction in which the aforementioned mounting portion is driven.

13. The substrate processing apparatus as described in claim 1, wherein, In the aforementioned (a), the aforementioned inhibition layer is further formed on at least a portion of the surface of the object in the aforementioned first space.

14. The substrate processing apparatus as described in any one of claims 1 to 7, wherein, The aforementioned first supply system has a supply section disposed at a position opposite to the surface of the aforementioned substrate.

15. The substrate processing apparatus as described in any one of claims 1 to 7, wherein, The aforementioned mounting portion is the aforementioned substrate configured to hold multiple pieces.

16. The substrate processing apparatus as described in any one of claims 1 to 7, wherein, It also has an activation section, which activates the gas in the second space by changing the potential difference between the aforementioned mounting section and other components.

17. A substrate processing method, characterized by comprising the following steps performed sequentially: (a) supplying a first gas to a substrate in a first space within a processing container; (b) disposing the substrate in a second space located above the first space within the processing container; and (c) supplying a second gas with a molecular structure different from the first gas to the substrate in the second space, wherein in (a), at least a suppression layer is formed on at least a portion of the surface of the substrate, which suppresses the processing by the second gas in (b).

18. A method for manufacturing a semiconductor device, characterized by comprising the following steps performed sequentially: (a) supplying a first gas to a substrate in a first space within a processing container; (b) disposing the substrate in a second space located above the first space within the processing container; and (c) supplying a second gas with a molecular structure different from the first gas to the substrate in the second space, wherein in (a), at least a suppression layer is formed on at least a portion of the surface of the substrate, which suppresses the processing by the second gas in (b).

19. A program characterized by performing the following procedures in a substrate processing apparatus by means of a computer: (a) a procedure for supplying a first gas to a substrate in a first space within a processing container; (b) a procedure for arranging the substrate in a second space located above the first space within the processing container; and (c) a procedure for supplying a second gas with a molecular structure different from the first gas to the substrate in the second space, wherein in (a), at least a suppression layer is formed on at least a portion of the surface of the substrate, which suppresses the processing by the second gas in (b).

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