Method for forming carbon film on substrate

Abstract

This invention discloses a method for forming a carbon film on a substrate surface, comprising performing an ion implantation process on the substrate to form an ion implantation region on the substrate; heating the substrate and performing a plasma pre-cleaning process on the substrate; forming a carbon film on at least one surface of the substrate; and then subjecting the substrate to high-temperature tempering. After heating and plasma pretreatment, moisture and dangling bonds on the substrate can be removed, and it is beneficial to form a dense and flat carbon film on the substrate, thereby improving the protective effect of the carbon film on the substrate.

Claims

1. A method for forming a carbon film on a substrate surface, comprising: An epitaxial layer is formed on a silicon carbide substrate to form a substrate; An ion implantation process is performed on the substrate to form at least one ion implantation region on the epitaxial layer of the substrate, and n-type or p-type doping is formed; the substrate, the epitaxial layer and the ion implantation region are heated to remove moisture from the substrate, the epitaxial layer and the ion implantation region; a plasma pre-cleaning process is performed on the substrate, the epitaxial layer and the ion implantation region; a carbon film is formed on at least one surface of the substrate, wherein the carbon film covers the ion implantation region on the substrate; and the substrate is subjected to a high-temperature tempering process.

2. The method for forming a carbon film on the surface of a substrate as described in claim 1, wherein the heating temperature of the substrate is between 100°C and 300°C.

3. The method for forming a carbon film on the surface of a substrate as described in claim 2, wherein the heating time of the substrate is between 60 seconds and 300 seconds.

4. The method for forming a carbon film on the surface of a substrate as described in claim 1, wherein the high-temperature tempering temperature of the substrate is greater than 1900°C.

5. The method for forming a carbon film on a substrate surface as claimed in claim 1, comprising the following steps: conveying the substrate to a chemical vapor deposition chamber; heating the substrate and performing a plasma pre-cleaning process in the chemical vapor deposition chamber; and forming the carbon film on at least one surface of the substrate in the chemical vapor deposition chamber through a chemical vapor deposition process.

6. The method for forming a carbon film on a substrate surface as claimed in claim 1, comprising the following steps: after completing the heating of the substrate and the plasma pre-cleaning process, transporting the substrate to a chemical vapor deposition chamber, and forming the carbon film on the substrate on at least one surface of the substrate through a chemical vapor deposition process.

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