air intake device for wafer processing equipment

Abstract

This invention provides a gas intake device for a wafer processing apparatus, comprising: an upper plate having an upper surface and an opposing lower surface; a lower plate having an upper surface and an opposing lower surface, the lower plate being disposed below the upper plate; a first gas channel for supplying gas to the edge region and / or central region of the gas intake device, the first gas channel being located between the lower surface of the upper plate and the upper surface of the lower plate; and a second gas channel for supplying gas to the central region of the gas intake device, the second gas channel being vertically penetrating the lower plate. This invention, by providing independent first and second gas channels, achieves gas intake for different regions of the wafer, solving the problem of uneven gas distribution.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor equipment, and in particular to the technical field of an air intake device of an ICP etching equipment. Prior Art

[0002] In the process of semiconductor wafer processing, etching equipment, such as ICP (Inductively Coupled Plasma) or CCP (Capacitively Coupled Plasma), is needed to etch grooves on the surface of the wafer.

[0003] Take ICP etching equipment as an example. In this equipment, the coil couples the energy of the RF power supply to the plasma in the vacuum chamber through the dielectric window by electromagnetic induction.

[0004] In the prior art, a dielectric window is used to transport process gas into a cavity, and the uniformity of process gas distribution will affect the uniformity of etching. However, the dielectric window of the prior art is still insufficient in terms of uniformity of gas distribution. Summary of the invention

[0005] The purpose of the present invention is to provide an air intake device for wafer processing equipment to solve the problem of air intake uniformity.

[0006] In order to achieve the above purpose, the present invention is implemented by the following technical solutions:

[0007] The present invention provides an air intake device for wafer processing equipment, comprising: an upper plate having an upper surface and an opposite lower surface; A lower plate, the lower plate having an upper surface and an opposite lower surface, the lower plate being disposed below the upper plate; A first gas channel, the first gas channel is used to deliver gas to the edge area and / or the middle area of the air intake device, and the first gas channel is located between the lower surface of the upper plate and the upper surface of the lower plate; A second gas channel is used to transport gas to the central area of the air intake device, and the second gas channel vertically penetrates the lower plate.

[0008] Optionally, the upper plate is provided with a first air inlet hole and a second air inlet hole, the first air inlet hole is provided at the center of the upper plate, and the second air inlet hole is provided adjacent to the first air inlet hole; The first air inlet is connected to the first gas channel, and the second air inlet is connected to the second gas channel.

[0009] Optionally, the first gas channel extends radially along the upper surface of the lower plate.

[0010] Optionally, the lower plate is provided with a first air outlet and a second air outlet, both of which are connected to the first gas channel, the first air outlet is provided in the edge area, and the second air outlet is provided in the middle area.

[0011] Optionally, the lower plate is further provided with a third air outlet, the third air outlet is connected to the second gas channel, and the third air outlet is provided in the central area.

[0012] Optionally, the lower plate includes a partition, which is arranged in the central area of the upper surface of the lower plate, and the partition is used to separate the first gas channel from the second gas channel.

[0013] Optionally, part of the first gas channel is located on the upper surface of the partition, and part of the second gas channel is located on the lower surface of the partition.

[0014] Optionally, an upwardly protruding air nozzle is provided on the upper surface of the partition, and the air nozzle is connected to the second air inlet hole.

[0015] Optionally, the air nozzle vertically penetrates the upper surface and the lower surface of the partition.

[0016] Optionally, a countersunk hole is provided at the lower portion of the second air inlet hole of the upper plate, and the countersunk hole is airtightly matched with the air nozzle.

[0017] Optionally, at least one protrusion is further provided on the upper surface of the partition, and the shape and size of the protrusion are the same as the upwardly protruding part of the air nozzle.

[0018] Optionally, the protrusion and the upwardly protruding portion of the air nozzle are distributed at equal intervals along the circumference of the upper surface of the partition.

[0019] Optionally, the upper surface of the protrusion abuts against the lower surface of the upper plate.

[0020] Optionally, the protrusion and the upwardly protruding portion of the air nozzle are both cylindrical.

[0021] Optionally, the lower plate further includes a flow-uniform portion, which is disposed in a central area of the lower plate and between the partition plate and the third air outlet.

[0022] Optionally, the flow-uniform portion is provided with flow-uniform holes penetrating its upper surface and lower surface.

[0023] Optionally, a first air chamber is provided between the upper surface of the flow-uniform portion and the lower surface of the partition; a second air chamber is provided between the lower surface of the flow-uniform portion and the third air outlet hole, and the flow-uniform hole connects the first air chamber and the second air chamber.

[0024] Optionally, the diameter of the first air chamber is smaller than the diameter of the partition, and the diameter of the first air chamber is larger than the diameter of the flow-uniform portion; the diameter of the second air chamber is the same as the diameter of the lower portion of the flow-uniform portion.

[0025] Optionally, the flow-uniforming hole and the third air outlet hole are vertically offset.

[0026] The present invention also provides a wafer processing device, comprising: Cavity, As for the air intake device mentioned above, the air intake device is arranged above the cavity and is used to transport process gas to the cavity.

[0027] Optionally, it also includes: an air intake pipeline, through which the process gas is connected to the air intake device, for conveying the process gas to the air intake device; The air intake line comprises a first line and a second line connected in parallel; The first pipeline is used to introduce a first process gas into the first gas channel and the second gas channel of the air intake device, and the second pipeline is used to introduce a second process gas into the first gas channel and the second gas channel of the air intake device, and the first process gas and the second process gas are different.

[0028] Optional, The first pipeline includes a first main line, a flow ratio controller, a first branch and a second branch, the first branch and the second branch are connected in parallel and connected to the downstream of the first main line through the flow ratio controller; The second pipeline includes a second main line, a flow ratio controller, a third branch and a fourth branch, the third branch and the fourth branch are connected in parallel and connected to the downstream of the second main line through the flow ratio controller; The first branch, the second branch, the third branch and the fourth branch are respectively provided with a first fast valve.

[0029] Optionally, the air intake pipeline further includes a bypass, one end of which is connected to the first branch, the second branch, the third branch and the fourth branch respectively, and the other end of which is connected to the pump; A second quick valve is respectively arranged at the connection between one end of the bypass and the branch.

[0030] Compared with the prior art, the present invention has the following advantages:

[0031] The present invention provides a first gas channel and a second gas channel, so that process gas can be transported to different areas of the wafer, ensuring uniform distribution of the process gas on the surface of the wafer. Simple diagram description

[0032] Figure 1 is a schematic structural diagram of a wafer processing device of the present invention; Figure 2 is a schematic diagram of the structure of the air intake device of the present invention; Figure 3 is a schematic diagram of the structure of another intake device of the present invention; Figure 4 is a bottom view of the air intake device of the present invention; Figure 5 is a partial schematic diagram of the air intake device of the present invention; Figure 6 is a partial enlarged schematic diagram of the air intake device of the present invention; Figure 7 is a schematic diagram of the structure of the partition of the present invention; Figure 8 is a cross-sectional view of the partition of the present invention; Figure 9 is a schematic diagram of the structure of the flow equalizer of the present invention; Figure 10 is a cross-sectional view of the uniform flow portion of the present invention; Figure 11 is a schematic diagram of the structure of the upper plate of the present invention; Figure 12 is a schematic diagram of the structure of the lower plate of the present invention; FIG. 13 is a schematic diagram of the structure of the air intake pipeline of the present invention. Implementation

[0033] The scheme proposed by the present invention is further described in detail below in combination with the drawings and specific implementation methods. According to the following description, the advantages and features of the present invention will be clearer. It should be noted that the drawings adopt a very simplified form and use non-precise proportions, which are only used to conveniently and clearly assist in explaining the purpose of the implementation method of the present invention. In order to make the purpose, features and advantages of the present invention more obvious and easy to understand, please refer to the drawings. It should be noted that the structure, proportion, size, etc. illustrated in the drawings attached to this specification are only used to match the content disclosed in the specification for people familiar with this technology to understand and read, and are not used to limit the limiting conditions for the implementation of the present invention, so they have no technical substantive significance. Any modification of the structure, change of the proportional relationship or adjustment of the size should still fall within the scope of the technical content disclosed by the present invention without affecting the effect that the present invention can produce and the purpose that can be achieved.

[0034] FIG1 shows a schematic diagram of the structure of the wafer processing equipment of the present invention, and the wafer processing equipment may be at least one of an etching equipment, a CVD (Chemical Vapor Deposition) equipment, and a PVD (Physical Vapor Deposition) equipment. This article takes the ICP etching equipment as an example, as shown in FIG1, the etching equipment includes: a chamber 201, a base 202, an air intake device 300, a heating component 243, a pressing plate and a base 203. Among them, the chamber 201 is used to process the wafer and perform an etching process on the wafer. The base 202 is arranged in the cavity 201; the air inlet device 300 is arranged above the cavity 201, and is used to evenly distribute the process gas delivered to the cavity 201 on the surface of the wafer; the heating component 243 is arranged on the upper surface of the air inlet device 300, and is used to control the temperature of the air inlet device 300; the pressure plate is arranged above the heating component 243, and is used to fix the heating component 243 on the air inlet device 300, and is also used to seal the air inlet device 300, that is, to seal the upper plate and the lower plate of the air inlet device 300; specifically, the heating component 243 is a circular thin sheet with a thickness less than or equal to 5 mm, and the heating component 243 is arranged in the central area of the upper surface of the air inlet device 300, and is used to heat the central area of the air inlet device 300.

[0035] The base 203 is disposed between the air inlet device 300 and the upper edge of the cavity 201. Optionally, the air inlet device 300 is circular, the base 203 is annular, and an edge heating element is disposed in the base 203, and the edge heating element is used to heat the edge area of the air inlet device 300. The air inlet device 300 can uniformly control the temperature of the air inlet device 300 through the heating component 243 in the central area and the edge heating element at the edge.

[0036] Continuing to refer to FIG. 1 , the etching equipment further includes a pump, an air intake line, a process gas source 208, a coil, a coil support 204, a first plasma source 205, a second plasma source 206, a matcher 207 and a controller 209. The process gas in the process gas source 208 is connected to the air intake device 300 through the air intake line, and is used to deliver the process gas to the air intake device 300, and then the process gas is evenly distributed in the cavity 201 through the air intake device 300. The pump is connected to the cavity 201, and is used to extract the process gas after the process out of the cavity 201. The coil is arranged above the heating assembly 243, and the coil is fixed above the cavity 201 through the coil support 204. The first plasma source 205 is connected to the coil through the matcher 207, and is used to deliver a radio frequency signal to the coil, so that plasma is generated in the cavity 201 during the etching process. The second plasma source 206 is connected to the electrode in the base 202 through the matcher 207, and the controller 209 is respectively connected to the first plasma source 205 and the second plasma source 206, and is used to control the first plasma source 205 and the second plasma source 206. The coil is a planar coil, and the coil is spiral, which includes an inner coil and an outer coil, the outer coil forms a roughly ring shape, and the inner coil also forms a roughly ring shape, and the two rings are concentrically arranged, and the centers of the two circles are concentric with the center of the base 202, so as to ensure the uniformity of the plasma.

[0037] FIG2 shows a schematic diagram of the structure of the air intake device of the present invention. As shown in FIG2, the air intake device 300 includes: an upper plate 310, a lower plate 320, a first gas channel 351 and a second gas channel 352. The lower plate 320 is arranged below the upper plate 310. The upper plate 310 has an upper surface and an opposite lower surface; the lower plate 320 has an upper surface and an opposite lower surface; preferably, the upper plate 310 and the lower plate 320 are both circular.

[0038] The first gas channel 351 is located between the lower surface of the upper plate 310 and the upper surface of the lower plate 320, and the first gas channel 351 is used to deliver gas to the edge area and / or the middle area of the air inlet device. The second gas channel 352 vertically penetrates the lower plate 320, and the second gas channel 352 is used to deliver gas to the central area of the air inlet device. Preferably, the upper plate 310 and the lower plate 320 are both circular and concentric. Among them, the edge area is opposite to the edge area of the wafer, the central area is opposite to the central area of the wafer, the central area is the area between the edge area and the central area, the central area is circular, and the edge area and the central area are both annular. Optionally, the first gas channel 351 can simultaneously deliver gas to the edge area and the middle area of the air inlet device, as shown in FIG3; of course, the first gas channel 351 can only deliver gas to one of the edge area or the middle area of the air inlet device, as shown in FIG2. Optionally, the first gas channel 351 and the second gas channel 352 can be controlled independently of each other. The first gas channel 351 and the second gas channel 352 provided in the present invention can independently transport gas to different areas of the wafer, so that the gas distribution on the surface of the wafer is more uniform.

[0039] As shown in FIG3 , the upper plate 310 is provided with a first air inlet hole 311 and a second air inlet hole 312. The first air inlet hole 311 is provided at the center of the upper plate 310, and the second air inlet hole 312 is provided adjacent to the first air inlet hole 311. The first air inlet hole 311 is connected to the first gas channel 351, and the second air inlet hole 312 is connected to the second gas channel 352. The first air inlet hole 311 and the second air inlet hole 312 both extend vertically and pass through the upper surface and the lower surface of the upper plate 310.

[0040] FIG4 shows a bottom view of the air intake device. As shown in FIG4 , the lower plate 320 is provided with a first air outlet 321 and a second air outlet 322. The first air outlet 321 and the second air outlet 322 are both connected to the first gas channel 351. The first air outlet 321 is arranged in the edge area, and the second air outlet 322 is arranged in the middle area. The lower plate 320 is also provided with a third air outlet, which is connected to the second gas channel 352 and is arranged in the central area. The first air outlet 321, the second air outlet 322 and the third air outlet all extend vertically and penetrate the upper surface and the lower surface of the lower plate 320. There are multiple first air outlets 321, and the multiple first air outlets 321 are arranged in a ring shape. The center of the ring shape is concentric with the center of the lower plate 320. Optionally, the ring shape is one or more groups. Similarly, there are multiple second air outlet holes 322, and the multiple second air outlet holes 322 are arranged in a ring shape, and the center of the ring shape is concentric with the center of the lower plate 320. Optionally, the ring shape is one group or multiple groups. Similarly, there are multiple third air outlet holes, and the multiple third air outlet holes are arranged in a ring shape, and the center of the ring shape is concentric with the center of the lower plate 320. Optionally, the ring shape is one group, two groups or multiple groups.

[0041] FIG5 and FIG6 show partial schematic diagrams of the air intake device. As shown in FIG5 and FIG6, the lower plate 320 includes a partition 330, and the partition 330 is arranged in the central area of the upper surface of the lower plate, and the partition is used to separate the first gas channel 351 from the second gas channel 352. Part of the first gas channel 351 is located on the upper surface of the partition 330, and part of the second gas channel 352 is located on the lower surface of the partition 330.

[0042] FIG. 7 and FIG. 8 show schematic diagrams of the structure of the partition. As shown in FIG. 7 and FIG. 8, the partition 330 is circular, and the center of the partition 330 is concentric with the center of the lower plate. The upper surface of the partition 330 is provided with an upwardly protruding gas nozzle 331, and the gas nozzle 331 is provided near the center of the partition 330. The gas nozzle 331 is connected to the second air inlet hole and is used to introduce gas from the second air inlet hole into the second gas channel 352. The gas nozzle 331 vertically penetrates the upper and lower surfaces of the partition 330. The lower part of the second air inlet hole of the upper plate 310 is provided with a countersunk hole 314, and the countersunk hole 314 is airtightly matched with the gas nozzle 331. At least one protrusion 332 is also provided on the upper surface of the partition, and the shape and size of the protrusion 332 are the same as the upward protruding portion of the gas nozzle 331, wherein the size refers to the lateral width of the outer contour of the gas nozzle 331 and the protrusion 332. Taking the gas nozzle 331 as a circle as an example, the size refers to the diameter of the circle. The upper surface of the protrusion 332 abuts against the lower surface of the upper plate. Preferably, the protrusion 332 and the upward protruding portion of the gas nozzle 331 are distributed at equal intervals along the circumference of the upper surface of the partition 330, and the protrusion 332 and the upward protruding portion of the gas nozzle 331 are both cylindrical. The provision of the protrusion 332 is conducive to fixing the partition 330, and at the same time, it allows the gas to diffuse more evenly on the upper surface of the partition 330.

[0043] 5 and 6 , the lower plate 320 further includes a flow equalizer 340 , which is disposed in the central region of the lower plate 320 and between the partition plate 330 and the third air outlet.

[0044] FIG9 and FIG10 show schematic diagrams of the structure of the flow equalizer. As shown in FIG9 and FIG10, the flow equalizer 340 is provided with flow equalizer holes 341 penetrating the upper and lower surfaces thereof, and the flow equalizer holes 341 extend vertically. Preferably, the flow equalizer 340 is a cylinder, and a circumferential annular protrusion 342 is provided on the upper edge thereof. Further preferably, there are a plurality of flow equalizer holes 341, and the plurality of flow equalizer holes 341 are arranged in a ring shape, and optionally, the ring shape is a group.

[0045] As shown in FIG6 , in some preferred embodiments, a first air chamber 361 is provided between the upper surface of the flow-leveling part 340 and the lower surface of the partition; a second air chamber 362 is provided between the lower surface of the flow-leveling part 340 and the third air outlet hole, and the flow-leveling hole 341 connects the first air chamber 361 and the second air chamber 362. Preferably, the first air chamber 361 and the second air chamber 362 are both cylindrical, and the centers of the first air chamber 361 and the second air chamber 362 are both concentric with the center of the lower plate. The diameter of the first air chamber 361 is smaller than the diameter of the partition, and the diameter of the first air chamber 361 is larger than the diameter of the flow-leveling part; the diameter of the second air chamber 362 is the same as the diameter of the lower part of the flow-leveling part. Specifically, the diameter of the partition is larger than the diameter of the first air chamber 361, the diameter of the first air chamber 361 is larger than the diameter of the annular protrusion 342 on the upper edge of the flow-leveling part 340, and the diameter of the lower part of the flow-leveling part 340 is the same as the diameter of the second air chamber 362. The height of the first air chamber 361 is less than the height of the flow-equalizing hole 341. Preferably, the height of the first air chamber 361 is less than or equal to 1 mm. The height of the second air chamber 362 is less than the height of the third air outlet hole 327. The height of the second air chamber 362 is less than or equal to 1 mm. The first air chamber 361 and the second air chamber 362 are low in height, which is conducive to preventing ignition caused by high voltage. At the same time, the height of the flow-equalizing hole 341 and the third air outlet hole 327 is high, which is conducive to the gas filling the first air chamber 361 and the second air chamber 362, thereby ensuring the effect of gas uniform flow.

[0046] Preferably, the diameter of the flow-uniform hole 341 is larger than the diameter of the third air outlet hole 327, and the flow-uniform hole 341 and the third air outlet hole 327 are vertically offset, that is, the flow-uniform hole 341 and the third air outlet hole 327 are not collinear, thereby increasing the flow-uniform effect.

[0047] Continuing to refer to FIG6 , the gas reaches the first horizontal gas channel through the first vertical air inlet, and then enters the edge area and the middle area of the cavity through the first air outlet and the second air outlet to form a first flow path S1. The gas enters the gas nozzle through the second vertical air inlet, and then reaches the first horizontal air chamber 361, and then enters the uniform flow hole and the second air chamber 362 downward in turn, and enters the central area of the cavity from the third air outlet 327 to form a second flow path S2.

[0048] Figure 11 shows a schematic structural diagram of the upper plate of the present invention. As shown in Figure 11, the upper plate 310 is circular, and an annular boss 313 is circumferentially arranged on its edge. The annular boss 313 is arranged on the upper part of the upper plate 310, and the upper surface of the annular boss 313 is flush with the upper surface of the upper plate 310.

[0049] FIG12 shows a schematic diagram of the structure of the lower plate of the present invention. As shown in FIG12, the lower plate 320 is circular, and the radius of the lower plate 320 is greater than the radius of the upper plate 310. A plurality of concentric circular grooves are arranged on the upper surface of the lower plate 320, and the plurality of circular grooves are stacked up and down, and the center of the circular groove is concentric with the center of the lower plate 320. The plurality of circular grooves include, from top to bottom, a first circular groove, a second circular groove 323, a third circular groove 324, a fourth circular groove 325, and a fifth circular groove.

[0050] Referring to FIG. 6 , the first circular groove is used to place the upper plate 310. The diameter of the first circular groove is the same as that of the upper plate 310. The annular boss 313 of the upper plate is arranged at the circumferential upper edge of the first circular groove to achieve sealing between the upper plate 310 and the lower plate 320. A plurality of radial grooves extending in the radial direction are arranged at the bottom of the first circular groove. The intervals between two adjacent radial grooves are the same. The radial grooves form the first gas channel 351. The radial grooves at least span the middle area and the edge area, and the radial grooves communicate the middle area and the edge area.

[0051] The second circular groove 323 is used to place the partition 330, and the diameter of the second circular groove 323 is smaller than the diameter of the first circular groove; the height and diameter of the second circular groove 323 are the same as the height and diameter of the partition 330.

[0052] The third circular groove 324 is used to form the first air chamber 361, and the diameter of the third circular groove 324 is smaller than the diameter of the second circular groove 323.

[0053] The fourth circular groove 325 is used to accommodate the annular protrusion 342 on the upper edge of the flow uniforming portion, and the diameter of the fourth circular groove 325 is smaller than the diameter of the third circular groove 324.

[0054] The fifth circular groove is used to accommodate the flow equalizer and form the second air chamber, and the diameter of the fifth circular groove is smaller than the diameter of the fourth circular groove. The bottom of the fifth circular groove forms a central air outlet 326, which is located in the central area, and the third air outlet 327 is arranged in the central air outlet 326.

[0055] ICP etching equipment is widely used in Bosch process. Bosch process realizes etching of high aspect ratio grooves by alternately switching etching gas and passivation gas into the cavity. In order to ensure the conformality of the groove, it is necessary to stabilize the pressure and flow rate when the etching gas and the passivation gas are switched. FIG13 shows a schematic diagram of the structure of the air intake pipeline. As shown in FIG13, the air intake pipeline includes a first pipeline and a second pipeline in parallel. The first pipeline is used to pass the first process gas into the first gas channel and the second gas channel of the air intake device 300, and the second pipeline is used to pass the second process gas into the first gas channel and the second gas channel of the air intake device 300. The first process gas and the second process gas are different. Among them, the first process gas can be, for example, a passivation gas, and the second gas can be, for example, an etching gas. Through the setting of the first pipeline and the second pipeline, the passivation gas and the etching gas are repeatedly switched and alternately introduced into the cavity. The downstream of the first pipeline is connected to the air intake device 300 through the first air intake hole 311 and the second air intake hole 312, and the downstream of the second pipeline is connected to the air intake device 300 through the first air intake hole 311 and the second air intake hole 312.

[0056] The first pipeline includes a first main line 281, a flow ratio controller (FRC), a first branch line 2811 and a second branch line 2812. The first branch line 2811 and the second branch line 2812 are connected in parallel and connected to the downstream of the first main line 281 through the flow ratio controller; the downstream of the first branch line 2811 is connected to the second air inlet 312, and the downstream of the second branch line 2812 is connected to the first air inlet 311. The flow ratio controller is used to control the process gas flow ratio of the first branch line 2811 and the second branch line 2812, thereby controlling the distribution ratio of the process gas entering the central area, the edge area and the middle area in the chamber.

[0057] The second pipeline includes a second main path 282, a flow ratio controller (FRC), a third branch 2821 and a fourth branch 2822. The third branch 2821 and the fourth branch 2822 are connected in parallel and connected to the downstream of the second main path 282 through the flow ratio controller; the downstream of the third branch 2821 is connected to the second air inlet 312, and the downstream of the fourth branch 2822 is connected to the first air inlet 311. The flow ratio controller is used to control the process gas flow ratio of the third branch 2821 and the fourth branch 2822, thereby controlling the distribution ratio of the process gas entering the central area, the edge area and the middle area in the chamber.

[0058] Valves are respectively provided on the first main path 281 and the second main path 282 for switching the first main path 281 and the second main path 282. First quick valves are respectively provided on the first branch 2811, the second branch 2812, the third branch 2821 and the fourth branch 2822. The first quick valves are used to switch between the passivation gas and the etching gas.

[0059] The air inlet pipeline also includes a bypass 283, one end of which is respectively connected to the first branch 2811, the second branch 2812, the third branch 2821 and the fourth branch 2822, and the other end of which is connected to the pump. A second fast valve is respectively provided at the connection between one end of the bypass 283 and the above-mentioned branches, and the second fast valve is used to deliver the unused process gas to the pump when the process gas is switched, so as to ensure the stability of the flow rate and pressure in the chamber when the process gas is switched. Preferably, both the first fast valve and the second fast valve are ALD valves to increase the speed of gas switching.

[0060] For example, during the etching process, the first fast valves on the third branch 2821 and the fourth branch 2822 are opened, the second fast valve on the bypass 283 at the connection with the third and fourth branches is closed, and the etching gas respectively enters the second gas inlet hole 312 and the first gas inlet hole 311. At this time, the first fast valves on the first branch 2811 and the second branch 2812 are closed, the second fast valve on the bypass 283 at the connection with the first and second branches is opened, and the passivation gas is delivered to the pump.

[0061] When switching from the etching process to the passivation process, the first fast valves on the third branch 2821 and the fourth branch 2822 are closed, the second fast valve on the bypass 283 at the connection with the third and fourth branches is opened, and the etching gas is delivered to the pump. At the same time, the first fast valves on the first branch 2811 and the second branch 2812 are opened, the second fast valve on the bypass 283 at the connection with the first and second branches is closed, and the passivation gas enters the second air inlet 312 and the first air inlet 311 respectively.

[0062] The air intake pipeline of the present invention can ensure stability during gas switching, thereby ensuring better conformality of the etched grooves.

[0063] It should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, the elements defined by the sentence "including one..." do not exclude the existence of other identical elements in the process, method, article or device including the elements. In addition, the term "connection" in this article means that A and B are directly connected, or that A and B are indirectly connected, such as A and B are connected through C, or even through more components such as C and D. The connection between A and B can be integral or split, detachable or fixed. The term "optional" in this article means that the technical feature can be combined or not combined with any feature in the text.

[0064] Although the content of the present invention has been described in detail through the above preferred embodiments, it should be recognized that the above description should not be considered as limiting the present invention. After reading the above content, various modifications and substitutions of the present invention will be obvious to those skilled in the art. Therefore, the protection scope of the present invention should be limited by the scope of the attached patent application.

[0065] 201: Cavity 202: Base 203: Base 204: Coil bracket 205: First plasma source 206: Second plasma source 207:Matcher 208: Process gas source 209: Controller 243: Heating component 300: Air intake 310:On the board 320: Lower board 311: First air inlet 312: Second air inlet 321: First vent 322: Second vent 327: The third vent 330: Partition 331: Gas nozzle 332: bulge 351: First gas channel 352: Second gas channel 340: Flow uniformity section 341: Flow hole 342: Ring protrusion S1: First flow path S2: Second flow path 323: Second circular groove 324: The third circular groove 325: Fourth circular groove 361: First Air Chamber 362: Second air chamber 314: Countersunk hole 313: annular boss 326: central air outlet 281: First Main Road 2811: First Branch 2812: Second Branch 282: Second Main Road 2821: The Third Branch 2822: The fourth branch 283: Bypass

Claims

1. An air intake device for a wafer processing apparatus, comprising: An upper plate having an upper surface and an opposing lower surface; A lower plate having an upper surface and an opposite lower surface, the lower plate being disposed below the upper plate; A first gas passage is used to deliver gas to the edge region and / or central region of the air intake device, and the first gas passage is located between the lower surface of the upper plate and the upper surface of the lower plate. The upper plate includes a first air inlet and a second air inlet. The first air inlet is located at the center of the upper plate, and the second air inlet is located adjacent to the first air inlet. The first air inlet is connected to the first air inlet, and the second air inlet is connected to the second air inlet. The lower plate includes a partition located in the central area of ​​the upper surface of the lower plate, which separates the first air inlet and the second air inlet. An upwardly protruding nozzle is provided on the upper surface of the partition, and the nozzle is connected to the second air inlet.

2. The air intake device of the wafer processing apparatus as described in claim 1, wherein, The first gas passage extends radially along the upper surface of the lower plate.

3. The air intake device of the wafer processing equipment as described in claim 2, wherein, The lower plate is provided with a first vent and a second vent, both of which are connected to the first gas channel. The first vent is located in the edge region, and the second vent is located in the middle region.

4. The air intake device of the wafer processing apparatus as described in claim 2, wherein, The lower plate is also provided with a third vent, which is connected to the second gas channel and is located in the central area.

5. The air intake device of the wafer processing apparatus as described in claim 4, wherein, A portion of the first gas passage is located on the upper surface of the partition, and a portion of the second gas passage is located on the lower surface of the partition.

6. The air intake device of the wafer processing apparatus as described in claim 5, wherein, The air nozzle extends vertically through the upper and lower surfaces of the partition.

7. The air intake device of the wafer processing apparatus as described in claim 5, wherein, A countersunk hole is provided at the lower part of the second air inlet of the upper plate, and the countersunk hole is airtightly fitted with the air nozzle.

8. The air intake device of the wafer processing apparatus as described in claim 5, wherein, The upper surface of the partition is also provided with at least one protrusion, the shape and size of which are the same as the upward protruding part of the air nozzle.

9. The air intake device of the wafer processing apparatus as described in claim 8, wherein, The protrusions and the upward-protruding portion of the air nozzle are distributed at equal intervals along the circumference of the upper surface of the partition.

10. The air intake device of the wafer processing apparatus as described in claim 9, wherein, The upper surface of the protrusion abuts against the lower surface of the upper plate.

11. The air intake device of the wafer processing apparatus as described in any one of claims 8 to 10, wherein, Both the protrusion and the upward-protruding part of the air nozzle are cylindrical.

12. The air intake device of the wafer processing apparatus as described in any one of claims 5 to 7, wherein, The lower plate also includes a flow equalization section, which is disposed in the central region of the lower plate and located between the partition and the third air outlet.

13. The air intake device of the wafer processing apparatus as described in claim 12, wherein, The flow equalization section is provided with flow equalization holes penetrating its upper and lower surfaces.

14. The air intake device of the wafer processing apparatus as described in claim 13, wherein, A first air chamber is provided between the upper surface of the flow equalization section and the lower surface of the partition plate; a second air chamber is provided between the lower surface of the flow equalization section and the third air outlet, and the flow equalization hole connects the first air chamber and the second air chamber.

15. The air intake device of the wafer processing apparatus as described in claim 14, wherein, The diameter of the first air chamber is smaller than the diameter of the partition plate, and the diameter of the first air chamber is larger than the diameter of the flow equalization section; the diameter of the second air chamber is the same as the diameter of the lower part of the flow equalization section.

16. The air intake device of the wafer processing apparatus as described in claim 15, wherein, The flow equalization hole and the third air outlet are vertically misaligned.

17. A wafer processing apparatus, comprising: A cavity, and an air intake device as claimed in any one of claims 1 to 16, the air intake device being disposed above the cavity for supplying process gas to the cavity.

18. The wafer processing apparatus as claimed in claim 17, further comprising: An intake pipe is provided, through which the process gas is connected to the intake device, for delivering the process gas to the intake device. The intake pipeline includes a first pipeline and a second pipeline connected in parallel; the first pipeline is used to introduce a first process gas into the first gas passage and the second gas passage of the intake device, and the second pipeline is used to introduce a second process gas into the first gas passage and the second gas passage of the intake device, wherein the first process gas and the second process gas are different.

19. The wafer processing apparatus as claimed in claim 18, wherein, The first pipeline includes a first main line, a flow proportional controller, a first branch line, and a second branch line. The first branch line and the second branch line are connected in parallel and are connected downstream of the first main line through the flow proportional controller. The second pipeline includes a second main line, the flow proportional controller, a third branch line, and a fourth branch line. The third branch line and the fourth branch line are connected in parallel and are connected downstream of the second main line through the flow proportional controller. A first quick valve is respectively installed on the first branch line, the second branch line, the third branch line, and the fourth branch line.

20. The wafer processing apparatus as claimed in claim 19, wherein, The intake pipe also includes a bypass, one end of which is connected to the first branch, the second branch, the third branch and the fourth branch respectively, and the other end of which is connected to the pump; A second quick valve is installed at the connection point between one end of the bypass and the branch.

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