Light emitting diode package structure
Patent Information
- Application Number
- TW114111888
- Authority / Receiving Office
- TW · TW
- Patent Type
- Patents
- Current Assignee / Owner
- Filing Date
- 2025-03-27
- Publication Date
- 2026-08-11
- Estimated Expiration
- 2045-03-26
Smart Images

Figure TWG2TB001905676_001 
Figure TWG2TB001905676_002 
Figure TWG2TB001905676_003
Abstract
Claims
1. A light-emitting diode (LED) packaging structure, comprising: An insulating layer having a process working area, wherein the area of the process working area occupies 2% to 50% of the total area of the insulating layer; a plurality of light-emitting diodes (LEDs) embedded in the insulating layer and arranged around the process working area; a circuit layer embedded in the insulating layer and electrically connected to the LEDs; a plurality of bonding pads disposed under the insulating layer and electrically connected to the circuit layer; and a light conversion layer disposed on the insulating layer, wherein, in a top view, the process working area overlaps with a geometric center of the LED package structure.
2. The light-emitting diode packaging structure as described in claim 1, wherein a light-emitting surface of each light-emitting diode is flush with an upper surface of the insulating layer.
3. The light-emitting diode packaging structure as described in claim 1 further includes an adhesive layer disposed between the light conversion layer and the light-emitting diodes.
4. The light-emitting diode packaging structure as claimed in claim 1, wherein each light-emitting diode has a plurality of electrodes disposed on a side opposite to the light conversion layer, wherein any two adjacent electrodes have a first distance between them, and any two adjacent bonding pads have a second distance between them, and the second distance is greater than the first distance.
5. The light-emitting diode packaging structure as described in claim 1, wherein each light-emitting diode has a thickness of 3 micrometers to 20 micrometers.
6. The light-emitting diode packaging structure as described in claim 1, wherein the insulating layer includes a first insulating layer and a second insulating layer located below the first insulating layer, the light-emitting diodes are embedded in the first insulating layer, and the circuit layer is embedded in the second insulating layer.
7. The light-emitting diode packaging structure as described in claim 6, wherein the first insulating layer or the second insulating layer reflects the light emitted by the light-emitting diodes, and the reflectivity of the first insulating layer or the second insulating layer is at least greater than 80%.
8. The light-emitting diode package structure as described in claim 1, wherein the light-emitting diodes are spaced apart and symmetrically arranged on any two opposite sides of the process working area.
9. The light-emitting diode packaging structure as described in claim 1, wherein each light-emitting diode has a first thickness, the light conversion layer has a second thickness, and the second thickness is greater than the first thickness and less than 200 micrometers.
10. The light-emitting diode packaging structure as described in claim 1, wherein the light conversion layer continuously covers the light-emitting diodes.
Citation Information
Patent Citations
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