Substrate processing apparatus and substrate processing method

Abstract

The substrate processing apparatus of the present invention includes: a first liquid supply unit that supplies a first processing liquid to a substrate; a second liquid supply unit that supplies a second processing liquid, different from the first processing liquid, to the substrate; a temperature adjustment unit that adjusts the temperature of a target liquid for heating contained in the second processing liquid; a cooling unit that cools the first processing liquid, i.e., the cooling target liquid, supplied to the substrate; and a first supply line that supplies the target liquid for heating from the cooling unit to the temperature adjustment unit. The cooling unit includes: a first tank for storing the target liquid for cooling; and a heat exchanger disposed within the first tank, which cools the target liquid stored in the first tank by allowing the target liquid for heating, which has a lower temperature than the target liquid for cooling, to flow through it. The first supply line supplies the target liquid for heating, which flows in the heat exchanger and is heated by the target liquid for cooling, to the temperature adjustment unit. The temperature adjustment unit adjusts the temperature of the target liquid for heating supplied to the temperature adjustment unit via the first supply line. The aforementioned second liquid supply unit supplies the aforementioned second processing liquid, which contains the aforementioned heated target liquid whose temperature has been adjusted by the aforementioned temperature adjustment unit, to the aforementioned substrate.

Description

Technical Field

[0001] This invention relates to a substrate processing apparatus and a substrate processing method. Prior Technology

[0002] Substrate processing apparatuses that supply high-temperature solutions to substrates for processing are known. For example, Patent Document 1 discloses a substrate processing apparatus that supplies high-temperature SPM (Sulfuric acid hydrogen peroxide mixture) to a substrate. SPM is a mixture of sulfuric acid (H2SO4) and hydrogen peroxide water (H2O2). The temperature of SPM is, for example, above about 190°C and below about 220°C. The resist film can be removed from the substrate by means of SPM.

[0003] After being cooled, the high-temperature chemical solution used for substrate processing is discharged to the waste liquid equipment of the factory equipped with the substrate processing equipment. For example, Patent Document 1 discloses a configuration in which SPM is discharged from the substrate processing equipment after being cooled by a cooling unit.

[0004] On the other hand, it is known that rinsing solutions heated to a temperature higher than room temperature are used as rinsing solutions to remove high-temperature chemicals from the substrate. For example, Patent Document 1 discloses the use of deionized water (DIW) heated to a temperature higher than room temperature as a rinsing solution. [Previous Technical Documents] [Patent Literature]

[0005] [Patent Document 1] Japanese Patent Application Publication No. 2020-047857 Summary of the Invention

[0006] [The problem the invention aims to solve] However, in the configuration of the substrate processing apparatus disclosed in Patent Document 1, electricity is always required to heat the rinsing liquid from room temperature to the processing temperature (target temperature). Therefore, there is room for further improvement if electricity consumption is taken into consideration.

[0007] The purpose of this invention is to provide a substrate processing apparatus and a substrate processing method that can reduce power consumption. [Technical means to solve the problem]

[0008] According to one embodiment of the present invention, a substrate processing apparatus includes: a first liquid supply unit, a second liquid supply unit, a temperature adjustment unit, a cooling unit, and a first supply line. The first liquid supply unit supplies a first processing liquid to the substrate. The second liquid supply unit supplies a second processing liquid, different from the first processing liquid, to the substrate. The temperature adjustment unit adjusts the temperature of a target liquid contained in the second processing liquid. The cooling unit cools the first processing liquid, i.e., the cooling target liquid, supplied to the substrate. The first supply line supplies the target liquid from the cooling unit to the temperature adjustment unit. The cooling unit has a first tank and a heat exchanger. The first tank stores the target liquid. The heat exchanger is disposed within the first tank. The heat exchanger cools the target liquid stored in the first tank by allowing the target liquid, which has a lower temperature than the target liquid, to flow through it. The aforementioned first supply line supplies the aforementioned heating target liquid, which flows in the aforementioned heat exchanger and is heated by the aforementioned cooling target liquid, to the aforementioned temperature adjustment unit. The aforementioned temperature adjustment unit adjusts the temperature of the aforementioned heating target liquid supplied to the aforementioned temperature adjustment unit via the aforementioned first supply line. The aforementioned second liquid supply unit supplies the aforementioned second processing liquid, containing the aforementioned heating target liquid whose temperature has been adjusted by the aforementioned temperature adjustment unit, to the aforementioned substrate.

[0009] In one embodiment, the aforementioned cooling unit further includes a second tank and a circulation pipeline. The second tank stores a liquid at a lower temperature than the liquid to be cooled compared to the liquid to be heated. The circulation pipeline circulates the liquid to be heated between the heat exchanger and the second tank.

[0010] In one implementation, the first supply line branches off from the aforementioned circulation line.

[0011] In one embodiment, the first supply pipeline supplies the heated liquid from the second tank to the temperature adjustment unit.

[0012] In one embodiment, the aforementioned first supply line includes a liquid delivery pump. The aforementioned liquid delivery pump delivers the liquid to be heated from the aforementioned second tank to the aforementioned temperature adjustment unit.

[0013] In one embodiment, the cooling unit further includes a first water level sensor. The first water level sensor detects whether the water level of the target liquid for heating stored in the second tank is within a specified range. The substrate processing apparatus further includes a second supply line and a controller. The second supply line supplies the target liquid for heating, which has a lower temperature than the target cooling liquid, to the second tank. The second supply line includes an on / off valve that controls the flow of the target liquid for heating through the second supply line. The controller controls the on / off valve based on the detection result of the first water level sensor.

[0014] In one embodiment, the aforementioned temperature adjustment unit includes a heater and a temperature sensor. The heater adjusts the temperature of the liquid to be heated, which is supplied to the aforementioned temperature adjustment unit via the aforementioned first supply line. The temperature sensor detects the temperature of the liquid to be heated, which is supplied to the aforementioned temperature adjustment unit via the aforementioned first supply line. The aforementioned substrate processing apparatus further includes a controller. The controller controls the aforementioned heater based on the temperature detected by the aforementioned temperature sensor.

[0015] In one embodiment, the aforementioned temperature adjustment unit includes a heater, a temperature sensor, and a flow control unit. The heater adjusts the temperature of the liquid to be heated, supplied to the temperature adjustment unit via the first supply line. The temperature sensor detects the temperature of the liquid to be heated supplied to the temperature adjustment unit via the first supply line. The flow control unit is located upstream of the heater. The flow control unit controls the flow rate of the liquid to be heated supplied to the temperature adjustment unit via the first supply line. The aforementioned substrate processing apparatus further includes a controller. The controller controls the flow control unit based on the temperature detected by the temperature sensor.

[0016] In one embodiment, the temperature adjustment unit includes a third tank and a second water level sensor. The third tank stores the aforementioned target liquid for heating, which is supplied to the temperature adjustment unit via the first supply line. The second water level sensor detects whether the water level of the target liquid for heating stored in the third tank is a predetermined level. The substrate processing apparatus further includes a controller. Based on the detection result of the second water level sensor, the controller controls the supply of the target liquid for heating to the temperature adjustment unit via the first supply line.

[0017] In one embodiment, the aforementioned first treatment solution contains sulfuric acid.

[0018] In one embodiment, the aforementioned heated liquid contains water.

[0019] In one embodiment, the aforementioned second processing liquid includes a rinsing liquid. The aforementioned rinsing liquid contains only the aforementioned heated target liquid.

[0020] In one embodiment, the substrate processing apparatus further includes a third liquid supply unit. The third liquid supply unit supplies a third processing liquid, different from the first and second processing liquids, to the substrate. The third processing liquid contains ammonia, hydrogen peroxide, and the aforementioned target liquid for heating, after the temperature has been adjusted by the temperature adjustment unit.

[0021] According to another aspect of the present invention, the substrate processing method includes: a step of supplying a first processing liquid to the substrate; a step of draining the first processing liquid, i.e., the cooling target liquid, supplied to the substrate into a first tank of a cooling unit; a cooling step of cooling the cooling target liquid by exchanging heat between the cooling target liquid stored in the first tank and a heating target liquid with a lower temperature than the cooling target liquid; a supply step of supplying the heating target liquid, which is heated by heat exchange with the cooling target liquid, from the cooling unit to a temperature adjustment unit; a step of adjusting the temperature of the heating target liquid by the temperature adjustment unit; and a step of supplying a second processing liquid, different from the first processing liquid, to the substrate. The second processing liquid contains the heating target liquid after its temperature has been adjusted by the temperature adjustment unit.

[0022] In one embodiment, during the aforementioned cooling process, the aforementioned heated liquid is circulated between the second tank storing the aforementioned heated liquid and the heat exchanger that performs heat exchange between the aforementioned cooled liquid and the aforementioned heated liquid.

[0023] In one embodiment, during the aforementioned supply process, the aforementioned heating liquid is supplied to the aforementioned temperature adjustment unit from a circulation pipeline that circulates the aforementioned heating liquid between the aforementioned second tank and the aforementioned heat exchanger.

[0024] In one embodiment, during the aforementioned supply process, the aforementioned heating target liquid is supplied from the aforementioned second tank to the aforementioned temperature adjustment unit.

[0025] In one embodiment, during the aforementioned supply process, the liquid to be heated is supplied from the aforementioned second tank to the aforementioned temperature adjustment unit by a liquid delivery pump.

[0026] In one embodiment, the above-described substrate processing method further includes the following step: based on the water level of the heated target liquid stored in the aforementioned second tank, supplying the aforementioned heated target liquid with a temperature lower than that of the aforementioned cooled target liquid to the aforementioned second tank.

[0027] In one embodiment, the aforementioned temperature adjustment unit includes a heater. The heater adjusts the temperature of the liquid to be heated, which is supplied from the aforementioned cooling unit to the aforementioned temperature adjustment unit. The aforementioned substrate processing method further includes the step of controlling the aforementioned heater based on the temperature of the liquid to be heated supplied from the aforementioned cooling unit to the aforementioned temperature adjustment unit.

[0028] In one embodiment, the aforementioned temperature adjustment unit includes a heater and a flow control unit. The heater adjusts the temperature of the liquid to be heated, which is supplied from the cooling unit to the temperature adjustment unit. The flow control unit is located upstream of the heater and controls the flow rate of the liquid to be heated supplied from the cooling unit to the temperature adjustment unit. The aforementioned substrate processing method further includes the step of controlling the flow control unit based on the temperature of the liquid to be heated supplied from the cooling unit to the temperature adjustment unit.

[0029] In one embodiment, the aforementioned temperature adjustment unit has a third tank. The third tank stores the heating target liquid supplied from the aforementioned cooling unit to the aforementioned temperature adjustment unit. The aforementioned substrate processing method further includes the following step: controlling the supply of the heating target liquid from the aforementioned cooling unit to the aforementioned temperature adjustment unit based on the water level of the heating target liquid stored in the aforementioned third tank.

[0030] In one embodiment, the aforementioned first treatment solution contains sulfuric acid.

[0031] In one embodiment, the aforementioned heated liquid contains water.

[0032] In one embodiment, the aforementioned second processing liquid includes a rinsing liquid. The aforementioned rinsing liquid contains only the aforementioned heated target liquid.

[0033] In one embodiment, the above-described substrate processing method further includes the following step: supplying a third processing liquid, different from the first and second processing liquids, to the substrate. The third processing liquid contains: ammonia, hydrogen peroxide, and the aforementioned heating target liquid after the temperature is adjusted by the temperature adjustment unit. Simple Explanation of the Diagram

[0034] Figure 1 is a schematic top view of a substrate processing apparatus according to a first embodiment of the present invention. Figure 2 is a schematic diagram showing the configuration of the substrate processing unit included in the substrate processing apparatus of the first embodiment of the present invention. Figure 3 is a flowchart showing the processing performed by the control unit included in the substrate processing apparatus of the first embodiment of the present invention. Figure 4 is a diagram showing a portion of the configuration of the substrate processing apparatus according to the first embodiment of the present invention. Figure 5 is a diagram showing the configuration of the second processing liquid supply unit included in the substrate processing apparatus of the first embodiment of the present invention. Figure 6 is a diagram showing the configuration of the warm water supply pipeline, warm water unit and cooling unit included in the substrate processing apparatus of the first embodiment of the present invention. Figure 7 is a flowchart showing the first supplementary processing performed by the control unit included in the substrate processing apparatus of the first embodiment of the present invention. Figure 8 is a flowchart showing the heating process performed by the control unit included in the substrate processing apparatus of the first embodiment of the present invention. Figure 9A is a diagram showing the first state of the cooling unit, warm water supply pipeline and warm water unit included in the substrate processing apparatus of the first embodiment of the present invention. Figure 9B is a diagram showing the second state of the cooling unit, warm water supply pipeline and warm water unit included in the substrate processing apparatus of the first embodiment of the present invention. Figure 10 is a flowchart showing the second supplementary processing performed by the control unit included in the substrate processing apparatus of the first embodiment of the present invention. Figure 11 is a diagram showing a substrate processing method according to a first embodiment of the present invention. Figure 12 is a diagram showing the supply process (step S44) of Figure 11. Figure 13 is a diagram showing the supplementary steps included in the substrate processing method of the first embodiment of the present invention. Figure 14 is a diagram showing the heating process included in the substrate processing method of the first embodiment of the present invention. Figure 15 is a diagram showing the configuration of the warm water supply pipeline, warm water unit and cooling unit included in the substrate processing apparatus of the second embodiment of the present invention. Figure 16 is a flowchart showing the flow control processing performed by the control unit included in the substrate processing apparatus of the second embodiment of the present invention. Figure 17 is a diagram showing the heating process included in the substrate processing method of the second embodiment of the present invention. Figure 18 is a diagram showing the configuration of the warm water supply pipeline, warm water unit and cooling unit included in the substrate processing apparatus of the third embodiment of the present invention. Figure 19A is a diagram showing the first state of the cooling unit, warm water supply pipeline and warm water unit included in the substrate processing apparatus of the third embodiment. Figure 19B is a diagram showing the second state of the cooling unit, warm water supply pipeline and warm water unit included in the substrate processing apparatus of the third embodiment. Implementation

[0035] Hereinafter, embodiments of the substrate processing apparatus and substrate processing method of the present invention will be described with reference to Figures 1 to 19B. However, the present invention is not limited to the following embodiments and can be implemented in various forms without departing from its spirit. Furthermore, descriptions of parts that are repeated are sometimes appropriately omitted. In addition, in the figures, the same or equivalent parts are indicated by the same reference numerals without repetition of description.

[0036] In the substrate processing apparatus and substrate processing method of the present invention, various substrates, such as semiconductor wafers, photomask glass substrates, liquid crystal display glass substrates, plasma display glass substrates, FED (Field Emission Display) substrates, optical disc substrates, magnetic disc substrates, and optical-magnetic disc substrates, can be used as the "substrate" to be processed. Hereinafter, an embodiment of the present invention will be described primarily using a disk-shaped semiconductor wafer as the substrate to be processed as an example. However, the substrate processing apparatus and substrate processing method of the present invention can also be applied to various substrates other than the aforementioned semiconductor wafers. Furthermore, the shape of the substrate is not limited to a disk shape; the substrate processing apparatus and substrate processing method of the present invention can be applied to substrates of various shapes.

[0037] [First Implementation Form] First, referring to Figures 1 to 14, the first embodiment of the present invention will be described. Figure 1 is a schematic top view of the substrate processing apparatus 100 of this embodiment. The substrate processing apparatus 100 processes a substrate W. More specifically, the substrate processing apparatus 100 is a monolithic apparatus that processes the substrate W one by one using a plurality of processing liquids.

[0038] As shown in Figure 1, the substrate processing apparatus 100 includes: a plurality of wafer loading and unloading machines LP, a transfer robot IR, a central robot CR, a plurality of substrate processing units 101, and a controller 102.

[0039] Wafer cassettes (CAs) are placed on each of the wafer loading / unloading machines (LPs). A wafer cassette (CA) stacks and houses one or more substrates (W). A wafer cassette (CA) can be, for example, a FOUP (Front Opening Unify Pod), an SMIF (Standard Mechanical Interface) wafer cassette, or an OC (Open Cassette).

[0040] The transfer robot IR transports substrate W between the wafer cassette CA and the central robot CR. The central robot CR transports substrate W between the transfer robot IR and multiple substrate processing units 101. In addition, a temporary mounting stage (path) for placing substrate W can be provided between the transfer robot IR and the central robot CR, which is configured as a device for indirectly transferring substrate W between the transfer robot IR and the central robot CR via the mounting stage.

[0041] A plurality of substrate processing units 101 are formed with a plurality of towers TW. The plurality of towers TW are configured to surround the central robot CR in a top view. Each tower TW contains a plurality of substrate processing units 101 stacked on top of each other.

[0042] In this embodiment, a plurality of substrate processing units 101 are formed with four towers TW (first tower TW1, second tower TW2, third tower TW3 and fourth tower TW4). The first tower TW1, second tower TW2, third tower TW3 and fourth tower TW4 each contain three substrate processing units 101 with upper and lower layers.

[0043] Each of the substrate processing units 101 sequentially supplies a plurality of processing liquids to the upper surface of the substrate W. As a result, the substrate W is processed. Specifically, each of the substrate processing units 101 sequentially supplies a first processing liquid, a second processing liquid, and a third processing liquid to the substrate W.

[0044] In this embodiment, the substrate processing unit 101 supplies SPM (sulfuric acid hydrogen peroxide mixture), SC1 (ammonia hydrogen peroxide water mixture), and rinsing solution to the substrate W in the order of SPM, rinsing solution, SC1, and rinsing solution. SPM removes the resist film from the substrate W. The rinsing solution supplied to the substrate after SPM rinses away the SPM from the substrate W. SC1 removes residual sulfur and other substances from the substrate W. The rinsing solution supplied to the substrate after SC1 rinses away the SC1 from the substrate W.

[0045] SPM contains sulfuric acid (H2SO4). Specifically, SPM is a mixture of sulfuric acid and hydrogen peroxide solution (H2O2) (sulfuric acid and hydrogen peroxide mixture). SPM is an example of a "first treatment solution". The temperature of SPM is, for example, above 120°C and below 200°C. SPM is an example of a "high-temperature solution".

[0046] The rinsing solution may be, for example, pure water. Pure water may be, for example, deionized water (DIW). More specifically, the rinsing solution may be ultrapure water.

[0047] The temperature of the rinsing solution supplied to substrate W after SPM is higher than room temperature. Room temperature is, for example, above 20°C and below 25°C. For example, the temperature of the rinsing solution supplied to substrate W after SPM is above 40°C and below 80°C. The rinsing solution with a temperature higher than room temperature is an example of "second processing solution". The temperature of the rinsing solution supplied to substrate W after SC1 can be, for example, room temperature.

[0048] SC1 contains ammonia (NH4OH), hydrogen peroxide solution, and water as if it were pure water. Specifically, SC1 is a mixture of ammonia, hydrogen peroxide solution, and water as if it were pure water. SC1 is an example of a "third treatment solution". The temperature of SC1 is higher than room temperature. For example, the temperature of SC1 is above 40°C and below 80°C.

[0049] According to this embodiment, since a rinsing solution with a temperature higher than room temperature is supplied to the substrate W after it has been supplied with a high-temperature chemical solution, the rapid shrinkage of the substrate W can be avoided. Specifically, the substrate W expands due to the supply of a high-temperature chemical solution. If a rinsing solution at room temperature is supplied to the expanded substrate W, the substrate W is rapidly cooled. As a result, the substrate W shrinks rapidly. Therefore, according to this embodiment, since a rinsing solution with a temperature higher than room temperature is supplied to the expanded substrate W, the substrate W is not rapidly cooled. As a result, the rapid shrinkage of the substrate W can be avoided.

[0050] Furthermore, according to this embodiment, SC1 at a temperature higher than room temperature is supplied to the substrate W. As a result, sulfur and other substances remaining on the substrate W can be removed more efficiently compared to using SC1 at room temperature. Therefore, according to this embodiment, the particle removal rate can be improved compared to using SC1 at room temperature.

[0051] The controller 102 controls the operation of various parts of the substrate processing apparatus 100. For example, the controller 102 controls the wafer loading and unloading machine LP, the transfer robot IR, the central robot CR, and the substrate processing unit 101. Specifically, the controller 102 includes a control unit 103 and a memory unit 104.

[0052] The control unit 103 controls the operation of various parts of the board processing device 100 based on various information stored in the memory unit 104. The control unit 103 may, for example, have a processor. The control unit 103 may have a CPU (Central Processing Unit) or an MPU (Micro Processing Unit) as a processor. Alternatively, the control unit 103 may have a general-purpose arithmetic unit or a dedicated arithmetic unit.

[0053] The memory unit 104 stores various information used to control the operation of the substrate processing device 100. For example, the memory unit 104 stores data and computer programs. The data includes various process condition data. Process condition data includes, for example, process conditions. Process conditions are data that specifies the sequence of steps in substrate processing. Specifically, process conditions specify the execution order of a series of processes included in substrate processing, the content of each process, and the conditions (parameter settings) of each process.

[0054] The memory unit 104 has a main memory device. The main memory device may include, for example, a semiconductor memory. The memory unit 104 may further have an auxiliary memory device. The auxiliary memory device may include, for example, at least one of a semiconductor memory and a hard disk drive. A removable medium may be included in the memory unit 104.

[0055] Next, referring to Figures 1 and 2, the substrate processing apparatus 100 of this embodiment will be described. Figure 2 is a schematic diagram showing the configuration of the substrate processing unit 101 included in the substrate processing apparatus 100 of this embodiment. In detail, Figure 2 shows the substrate processing unit 101 included in the first tower TW1.

[0056] As shown in Figure 2, the substrate processing unit 101 includes: a processing chamber 101a, a substrate holding unit 3, a substrate rotating unit 4, a first processing liquid supply unit 5a, a second processing liquid supply unit 5b, a third processing liquid supply unit 5c, a first nozzle moving unit 6a, a second nozzle moving unit 6b, a third nozzle moving unit 6c, a liquid receiving unit 7, and a liquid receiving moving unit 75. Furthermore, the substrate processing apparatus 100 further includes a drain tank 400A, a cooling unit 800, a drain pipe 301a, and a drain pipe 401a.

[0057] The processing chamber 101a has a generally box-like shape. The processing chamber 101a houses a substrate W, a substrate holding part 3, a substrate rotating part 4, a portion of a first processing liquid supply part 5a, a portion of a second processing liquid supply part 5b, a portion of a third processing liquid supply part 5c, a first nozzle moving part 6a, a second nozzle moving part 6b, a third nozzle moving part 6c, a liquid receiving part 7, and a liquid receiving moving part 75. The substrate W is moved into the processing chamber 101a and processed within it. That is, substrate processing is performed within the processing chamber 101a. The processing chamber 101a is, for example, a cavity.

[0058] The substrate holding section 3 holds the substrate W horizontally within the processing chamber 101a. The substrate holding section 3 is controlled by the control section 103. Specifically, the substrate holding section 3 may have a spin base 31 and a plurality of clamping members 32.

[0059] The spin base 31 is generally disk-shaped and supports a plurality of clamping components 32 in a horizontal position. The plurality of clamping components 32 are disposed around the periphery of the spin base 31. The plurality of clamping components 32 clamp the periphery of the substrate W. The substrate W is held in a horizontal position by the plurality of clamping components 32. The movement of the plurality of clamping components 32 is controlled by the control unit 103.

[0060] The substrate rotating part 4 rotates the substrate W integrally with the substrate holding part 3. Specifically, the substrate rotating part 4 rotates the substrate holding part 3 holding the substrate W around a first rotation axis AX1 extending vertically. The substrate rotating part 4 is controlled by the control part 103. More specifically, the first rotation axis AX1 passes through the center of the spin base 31. A plurality of clamping members 32 are arranged such that the center of the substrate W faces the center of the spin base 31. Therefore, the substrate W rotates around its center.

[0061] Specifically, the substrate rotation part 4 may have a drive part 41 and a shaft 42. The shaft 42 is coupled to the central part of the spin base 31 and extends downward from the spin base 31. The drive part 41 generates a driving force that rotates the substrate W integrally with the substrate holding part 3. In detail, the drive part 41 rotates the shaft 42 about the first rotation axis AX1. As a result, the spin base 31 rotates. The drive part 41 is controlled by the control part 103. The drive part 41 includes, for example, an electric motor.

[0062] The first processing liquid supply unit 5a supplies processing liquid to the substrate W held in the substrate holding unit 3. The first processing liquid supply unit 5a is an example of a "first liquid supply unit". In this embodiment, the first processing liquid supply unit 5a supplies SPM (first processing liquid) to the substrate W.

[0063] Specifically, the first processing fluid supply unit 5a includes: a first nozzle 51a, a first processing fluid pipe 521, a second processing fluid pipe 522, a first processing fluid on / off valve 531, and a second processing fluid on / off valve 532.

[0064] The first nozzle 51a is housed within the processing chamber 101a. The first nozzle 51a sprays SPM (first processing liquid) onto the upper surface of the substrate W held in the substrate holding portion 3. Therefore, SPM is supplied from the first nozzle 51a to the upper surface of the substrate W. More specifically, the first nozzle 51a sprays SPM onto the upper surface of the rotating substrate W. As a result, a liquid film of SPM is formed on the upper surface of the substrate W.

[0065] The first processing solution pipe 521 and the second processing solution pipe 522 are tubular components that allow the processing solution to flow. Specifically, one end of the second processing solution pipe 522 is connected to the first processing solution pipe 521. The second processing solution pipe 522 allows sulfuric acid to flow to the first processing solution pipe 521. Therefore, sulfuric acid is supplied to the first processing solution pipe 521. The temperature of the sulfuric acid is, for example, above 90°C and below 180°C.

[0066] One end of the first treatment solution pipe 521 is connected to the first nozzle 51a. A portion of the first treatment solution pipe 521 is housed within the treatment chamber 101a. The first treatment solution pipe 521 allows hydrogen peroxide water to flow through it. Therefore, sulfuric acid and hydrogen peroxide water mix within the first treatment solution pipe 521 to generate SPM. The temperature of the hydrogen peroxide water is, for example, room temperature. Room temperature is, for example, above 20°C and below 25°C. If sulfuric acid and hydrogen peroxide water are mixed, the sulfuric acid reacts with the hydrogen peroxide water and the temperature rises. As a result, for example, SPM is generated at a temperature above 120°C and below 200°C.

[0067] The first processing fluid piping 521 allows SPM to flow to the first nozzle 51a. Therefore, SPM is supplied to the first nozzle 51a and ejected from the first nozzle 51a.

[0068] The first processing fluid on / off valve 531 and the second processing fluid on / off valve 532 are capable of opening and closing. The opening and closing actions of the first processing fluid on / off valve 531 and the second processing fluid on / off valve 532 are controlled by the control unit 103. The actuators of the first processing fluid on / off valve 531 and the second processing fluid on / off valve 532 are, for example, pneumatic actuators or electric actuators.

[0069] The first processing fluid on / off valve 531 is located upstream of the connection point P1 between the first processing fluid pipe 521 and the second processing fluid pipe 522 on the first processing fluid pipe 521. In other words, the second processing fluid pipe 522 is connected to the first processing fluid pipe 521 downstream of the first processing fluid on / off valve 531. The first processing fluid on / off valve 531 controls the flow of hydrogen peroxide water through the first processing fluid pipe 521. Specifically, when the first processing fluid on / off valve 531 is open, hydrogen peroxide water flows through the first processing fluid pipe 521. When the first processing fluid on / off valve 531 is closed, the flow of hydrogen peroxide water through the first processing fluid pipe 521 stops.

[0070] A second processing liquid on / off valve 532 is installed on the second processing liquid piping 522. The second processing liquid on / off valve 532 controls the flow of sulfuric acid through the second processing liquid piping 522. Specifically, when the second processing liquid on / off valve 532 is open, sulfuric acid flows through the second processing liquid piping 522. When the second processing liquid on / off valve 532 is closed, the flow of sulfuric acid through the second processing liquid piping 522 stops.

[0071] When SPM is ejected from the first nozzle 51a, the control unit 103 sets the first processing fluid on / off valve 531 and the second processing fluid on / off valve 532 to the open state. When the ejection of SPM from the first nozzle 51a is stopped, the control unit 103 sets the first processing fluid on / off valve 531 and the second processing fluid on / off valve 532 to the closed state.

[0072] More specifically, after supplying SPM to the substrate W, the first processing liquid supply unit 5a supplies hydrogen peroxide water to the substrate W. Specifically, the control unit 103 first sets the first processing liquid on / off valve 531 and the second processing liquid on / off valve 532 to the open state, and sprays SPM from the first nozzle 51a. Then, the control unit 103 sets the second processing liquid on / off valve 532 to the closed state, stopping the flow of sulfuric acid from the second processing liquid pipe 522 to the first processing liquid pipe 521. Therefore, hydrogen peroxide water flows through the first processing liquid pipe 521 to the first nozzle 51a, and is sprayed from the first nozzle 51a.

[0073] The second processing liquid supply unit 5b supplies processing liquid to the substrate W held in the substrate holding unit 3. The second processing liquid supply unit 5b is an example of a "third liquid supply unit". In this embodiment, the second processing liquid supply unit 5b supplies SC1 (the third processing liquid) to the substrate W. As explained, the temperature of SC1 is higher than room temperature. For example, the temperature of SC1 is 40°C or higher and 80°C or lower.

[0074] Specifically, the second processing fluid supply unit 5b includes: a second nozzle 51b, a third processing fluid piping 523, and a third processing fluid on / off valve 533.

[0075] The second nozzle 51b is housed within the processing chamber 101a. The second nozzle 51b ejects SC1 (the third processing liquid) onto the upper surface of the substrate W held in the substrate holding portion 3. Therefore, SC1 is supplied from the second nozzle 51b to the upper surface of the substrate W. More specifically, the second nozzle 51b ejects SC1 onto the upper surface of the rotating substrate W. As a result, a liquid film of SC1 is formed on the upper surface of the substrate W.

[0076] The third processing fluid pipe 523 is a tubular component that allows the processing fluid to flow. Specifically, one end of the third processing fluid pipe 523 is connected to the second nozzle 51b. A portion of the third processing fluid pipe 523 is housed within the processing chamber 101a. The third processing fluid pipe 523 allows SC1 to flow to the second nozzle 51b. Therefore, SC1 is supplied to the second nozzle 51b and ejected from the second nozzle 51b.

[0077] A third processing fluid on / off valve 533 is installed on the third processing fluid piping 523. The third processing fluid on / off valve 533 controls the flow of SC1 through the third processing fluid piping 523. Specifically, when the third processing fluid on / off valve 533 is open, SC1 flows through the third processing fluid piping 523. When the third processing fluid on / off valve 533 is closed, the flow of SC1 through the third processing fluid piping 523 stops.

[0078] When SC1 is ejected from the second nozzle 51b, the control unit 103 sets the third processing fluid on / off valve 533 to the open state. When the ejection of SC1 from the second nozzle 51b stops, the control unit 103 sets the third processing fluid on / off valve 533 to the closed state. Furthermore, since the configuration of the third processing fluid on / off valve 533 is substantially the same as that of the first processing fluid on / off valve 531 and the second processing fluid on / off valve 532, its detailed description is omitted.

[0079] The third processing liquid supply unit 5c supplies processing liquid to the substrate W held in the substrate holding unit 3. The third processing liquid supply unit 5c is an example of the "second liquid supply unit". In this embodiment, the third processing liquid supply unit 5c selectively supplies either a rinsing liquid with a temperature higher than room temperature (the second processing liquid) or a rinsing liquid at room temperature to the substrate W.

[0080] Specifically, the third processing fluid supply unit 5c includes: a third nozzle 51c, a fourth processing fluid pipe 524, a fifth processing fluid pipe 525, a fourth processing fluid on / off valve 534, and a fifth processing fluid on / off valve 535.

[0081] The fourth and fifth processing fluid pipes 524 and 525 are tubular components that allow the processing fluid to flow. One end of the fifth processing fluid pipe 525 is connected to the fourth processing fluid pipe 524. One end of the fourth processing fluid pipe 524 is connected to the third nozzle 51c. The third nozzle 51c is housed within the processing chamber 101a. A portion of the fourth processing fluid pipe 524 is housed within the processing chamber 101a.

[0082] The fourth processing fluid on / off valve 534 is located upstream of the connection point P2 between the fourth processing fluid pipe 524 and the fifth processing fluid pipe 525 on the fourth processing fluid pipe 524. In other words, the fifth processing fluid pipe 525 is connected to the fourth processing fluid pipe 524 downstream of the fourth processing fluid on / off valve 534. The fifth processing fluid on / off valve 535 is located on the fifth processing fluid pipe 525. Furthermore, since the configuration of the fourth processing fluid on / off valve 534 and the fifth processing fluid on / off valve 535 is substantially the same as that of the first processing fluid on / off valve 531 and the second processing fluid on / off valve 532, their detailed description is omitted.

[0083] A rinsing solution (second processing solution) at a temperature higher than room temperature is supplied to the fourth processing solution pipe 524. The rinsing solution can be water such as pure water. In other words, water at a temperature higher than room temperature can be supplied to the fourth processing solution pipe 524 as the rinsing solution. Hereinafter, water at a temperature higher than room temperature will sometimes be referred to as "warm water". In this embodiment, DIW (deionized water) at a temperature higher than room temperature is supplied to the fourth processing solution pipe 524 as the rinsing solution.

[0084] A flushing fluid at room temperature can be supplied to the fifth processing fluid piping 525, for example. In other words, a flushing fluid at a temperature lower than that of warm water can be supplied to the fifth processing fluid piping 525. In this embodiment, room temperature DIW is supplied to the fifth processing fluid piping 525 as the flushing fluid.

[0085] When warm water is ejected from the third nozzle 51c, the control unit 103 sets the fourth processing liquid on / off valve 534 to the open state and the fifth processing liquid on / off valve 535 to the closed state. Therefore, warm water flows to the third nozzle 51c via the fourth processing liquid pipe 524, and the third nozzle 51c ejects warm water (the second processing liquid) onto the upper surface of the substrate W held in the substrate holding part 3. More specifically, the third nozzle 51c ejects warm water onto the upper surface of the rotating substrate W. Therefore, a film of warm water is formed on the upper surface of the substrate W.

[0086] When room-temperature DIW is ejected from the third nozzle 51c, the control unit 103 sets the fourth processing liquid on / off valve 534 to the closed state and the fifth processing liquid on / off valve 535 to the open state, allowing room-temperature DIW to flow from the fifth processing liquid pipe 525 into the fourth processing liquid pipe 524. Therefore, room-temperature DIW flows through the fourth processing liquid pipe 524 to the third nozzle 51c, and is ejected from the third nozzle 51c onto the upper surface of the substrate W held in the substrate holding part 3.

[0087] More specifically, the third nozzle 51c sprays room-temperature DIW onto the upper surface of the rotating substrate W. Thus, a liquid film of room-temperature DIW is formed on the upper surface of the substrate W. The room-temperature DIW can be supplied, for example, from the factory equipped with the substrate processing apparatus 100 to the fifth processing liquid piping 525.

[0088] In addition, in the following description, when it is not necessary to distinguish between warm water and room temperature DIW, warm water and room temperature DIW may sometimes be referred to as "rinsing fluid".

[0089] The first nozzle moving part 6a moves the first nozzle 51a in both the vertical and horizontal directions. The first nozzle moving part 6a is controlled by the control part 103. Specifically, the first nozzle moving part 6a moves the first nozzle 51a between a first standby position and a processing position. The first standby position is the position outside the liquid receiving part 7. The processing position is the position facing the upper surface of the substrate W held in the substrate holding part 3. In this embodiment, the processing position is the position facing the center of the substrate W. When the first nozzle moving part 6a processes the substrate W with SPM (first processing liquid), the first nozzle 51a moves to the processing position. Therefore, SPM is ejected from the first nozzle 51a toward the center of the substrate W.

[0090] Specifically, the first nozzle moving part 6a may have a nozzle arm 61, a nozzle base 62, and a nozzle moving mechanism 63.

[0091] The nozzle base 62 extends vertically. A nozzle arm 61 is coupled to the nozzle base 62. The nozzle arm 61 extends horizontally from the nozzle base 62. The nozzle arm 61 supports a first nozzle 51a. For example, the first nozzle 51a is fixed to the front end of the nozzle arm 61 and protrudes downward from the front end of the nozzle arm 61.

[0092] The nozzle moving mechanism 63 moves the nozzle arm 61 in both the vertical and horizontal directions. Therefore, the first nozzle 51a moves in both the vertical and horizontal directions. The nozzle moving mechanism 63 is controlled by the control unit 103.

[0093] Specifically, the nozzle moving mechanism 63 includes a rotating mechanism and a lifting mechanism. The rotating mechanism causes the nozzle base 62 to rotate in both directions around a second rotation axis AX2 extending vertically. Therefore, the first nozzle 51a moves along the horizontal plane. The lifting mechanism causes the nozzle base 62 to move up and down vertically. Therefore, the first nozzle 51a moves vertically. The actuator of the rotating mechanism may include, for example, a servo motor such as a stepper motor and a speed reducer. The actuator of the lifting mechanism may include, for example, a ball screw and an electric motor capable of rotating in both directions.

[0094] The second nozzle moving part 6b, like the first nozzle moving part 6a, moves the second nozzle 51b in both the vertical and horizontal directions. The second nozzle moving part 6b is controlled by the control part 103. Specifically, the second nozzle moving part 6b, like the first nozzle moving part 6a, moves the second nozzle 51b between a second standby position and a processing position. The second standby position is a position outside the liquid receiving part 7 that differs from the first standby position. Since the structure of the second nozzle moving part 6b is substantially the same as that of the first nozzle moving part 6a, its description is omitted.

[0095] The third nozzle moving part 6c, like the first nozzle moving part 6a and the second nozzle moving part 6b, moves the third nozzle 51c in both the vertical and horizontal directions. The third nozzle moving part 6c is controlled by the control part 103. Specifically, the third nozzle moving part 6c, like the first nozzle moving part 6a and the second nozzle moving part 6b, moves the third nozzle 51c between a third standby position and a processing position. The third standby position is a position outside the liquid receiving part 7 that differs from the first standby position and the second standby position. Since the structure of the third nozzle moving part 6c is substantially the same as that of the first nozzle moving part 6a, its description is omitted.

[0096] The liquid-receiving portion 7 surrounds the substrate W held in the substrate holding portion 3 and receives the processing liquid (SPM, SC1, and rinsing liquid) discharged from the substrate W. Specifically, the liquid-receiving portion 7 may have a first liquid-receiving portion 71, a second liquid-receiving portion 72, and a third liquid-receiving portion 73. In this embodiment, the first liquid-receiving portion 71 receives the SPM discharged from the substrate W. The second liquid-receiving portion 72 receives the SC1 and rinsing liquid discharged from the substrate W.

[0097] More specifically, the first liquid receiving portion 71 has a first protective cover portion 711 and a first cup portion 712. The second liquid receiving portion 72 has a second protective cover portion 721 and a second cup portion 722. The third liquid receiving portion 73 is a protective cover portion. Hereinafter, the third liquid receiving portion 73 will sometimes be referred to as "the third protective cover portion 73".

[0098] The liquid-receiving moving part 75 moves the first shield part 711, the second shield part 721, and the third shield part 73, so that the first shield part 711 receives the SPM discharged from the substrate W, and the second shield part 721 receives the rinsing liquid and SC1 discharged from the substrate W. The liquid-receiving moving part 75 is controlled by the control part 103. Specifically, the liquid-receiving moving part 75 may have a first lifting part 75a, a second lifting part 75b, and a third lifting part 75c.

[0099] The first lifting section 75a raises and lowers the first protective cover section 711 between the first upper position and the first lower position. When the first protective cover section 711 is in the first upper position, its upper end is positioned above the substrate W held in the substrate holding section 3. When the first protective cover section 711 is in the first lower position, its upper end is positioned below the substrate W held in the substrate holding section 3. Figure 2 shows the first protective cover section 711 in the first upper position.

[0100] Similarly, the second lifting part 75b raises and lowers the second protective cover 721 between the second upper position and the second lower position. The third lifting part 75c raises and lowers the third protective cover 73 between the third upper position and the third lower position. Figure 2 shows the second protective cover 721 in the second upper position and the third protective cover 73 in the third upper position.

[0101] The first lifting section 75a to the third lifting section 75c are controlled by the control section 103. Each of the first lifting section 75a to the third lifting section 75c may have, for example, a ball screw and an electric motor capable of rotating in both directions.

[0102] More specifically, the first shield portion 711 is generally cylindrical. When the first shield portion 711 is in the first upper position, it surrounds the substrate W held in the substrate holding portion 3 and receives the processing liquid (SPM) discharged from the substrate W.

[0103] The first cup portion 712 is an annular component disposed around the substrate rotating portion 4. The first cup portion 712 has an annular groove with an open upper surface. The lower end of the annular portion 711 of the first shield portion is located inside the annular groove of the first cup portion 712. Therefore, the processing liquid (SPM) received by the first shield portion 711 is collected in the groove of the first cup portion 712. The SPM collected in the first cup portion 712 is the SPM supplied to the substrate W after processing. In other words, the SPM collected in the first cup portion 712 is the SPM used after substrate processing (used SPM).

[0104] The second shield 721 is a generally cylindrical member disposed around (outer side) the first shield 711. When the second shield 721 is in the second upper position and the first shield 711 is in the first lower position, the second shield 721 surrounds the substrate W held in the substrate holding part 3 and receives the processing liquid (SC1 and rinsing liquid) discharged from the substrate W.

[0105] The second cup portion 722, like the first cup portion 712, has an annular groove with an open upper surface. The processing liquid (SC1 and rinsing liquid) received by the second shield portion 721 is concentrated in the groove of the second cup portion 722. The SC1 concentrated in the second cup portion 722 is the SC1 supplied to the substrate W after use (SC1 after application). The rinsing liquid concentrated in the second cup portion 722 is the rinsing liquid supplied to the substrate W after use (rinsing liquid after application). Since the structure of the second cup portion 722 is substantially the same as that of the first cup portion 712, its description is omitted.

[0106] The third protective cover 73 is a generally cylindrical component disposed around (outer side) the second protective cover 721.

[0107] The cooling unit 800 is located outside the processing chamber 101a. The cooling unit 800 is positioned below the processing chamber 101a. The drain pipe 301a is a tubular component that allows the processing fluid to flow through. The drain pipe 301a guides the used SPM to the cooling unit 800. Specifically, one end of the drain pipe 301a is connected to the bottom of the first cup portion 712. The used SPM collected in the first cup portion 712 flows into the drain pipe 301a. In other words, the drain pipe 301a allows the used SPM to be discharged from the first cup portion 712 (receiving portion 7). The drain pipe 301a extends from the inside of the processing chamber 101a to the outside. Therefore, the used SPM is discharged from the processing chamber 101a via the drain pipe 301a. The other end of the drain pipe 301a is connected to the cooling unit 800. Therefore, the SPM after use flows into the cooling unit 800.

[0108] As already stated, SPM is at a high temperature. Cooling unit 800 cools the SPM after use. The SPM after use is an example of "cooling target liquid". After cooling, the SPM is discharged to the first waste liquid equipment of the factory equipped with substrate processing device 100.

[0109] In detail, the used SPM flows into the cooling unit 800 from each tower TW as illustrated in Figure 1. Figure 2 illustrates the drain pipe 301a of the first tower TW1. The drain pipe 301a of the first tower TW1 allows the used SPM to be discharged from the three processing chambers 101a contained in the first tower TW1.

[0110] As illustrated in Figure 2, the used SPM discharged from the three processing chambers 101a contained in the first tower TW1 flows into the cooling unit 800 via the drain pipe 301a. In other words, the drain pipe 301a discharges the used SPM from the first tower TW1 to the cooling unit 800. The cooling unit 800 cools the used SPM discharged from each tower TW (each processing chamber 101a).

[0111] The drain tank 400A is located outside the processing chamber 101a. The drain tank 400A is positioned below the processing chamber 101a. The drain pipe 401a is a tubular component for the flow of processing liquid. One end of the drain pipe 401a is connected to the bottom of the second cup portion 722. Like the drain pipe 301a, the drain pipe 401a guides the used SC1 and the used rinsing liquid to the drain tank 400A. Therefore, the used SC1 and the used rinsing liquid are stored in the drain tank 400A. The SC1 and rinsing liquid stored in the drain tank 400A are discharged to the second waste liquid equipment of the factory equipped with the substrate processing apparatus 100.

[0112] Furthermore, the drain tank 400A is provided for each of the towers TW as described with reference to FIG1. ​​Thus, in one drain tank 400A, the used SC1 and the used flushing liquid discharged from the three processing chambers 101a contained in the corresponding tower TW flow in.

[0113] Next, referring to Figures 1 to 3, the processing performed by the control unit 103 will be described. Figure 3 is a flowchart showing the processing performed by the control unit 103 included in the substrate processing apparatus 100 of this embodiment. The processing shown in Figure 3 begins when the substrate W is moved into the processing chamber 101a by the central robot CR.

[0114] When the processing shown in FIG. 3 begins, the control unit 103 causes the substrate holding unit 3 to hold the substrate W horizontally (step S1). Specifically, the control unit 103 controls the central robot CR, and after the plurality of clamping members 32 place the substrate W, the central robot CR retracts from the processing chamber 101a. When the substrate W is placed on the plurality of clamping members 32, the control unit 103 causes the plurality of clamping members 32 to hold the substrate W. Therefore, the substrate W is held by the substrate holding unit 3.

[0115] When the substrate holding part 3 holds the substrate W, the control unit 103 controls the substrate rotation part 4 to rotate the substrate W integrally with the substrate holding part 3. Furthermore, after the central robot CR retracts from the processing chamber 101a, the control unit 103 controls the liquid-receiving movement part 75 to move the first shield part 711, the second shield part 721, and the third shield part 73 from the first lower position, the second lower position, and the third lower position to the first upper position, the second upper position, and the third upper position, respectively. Additionally, the control unit 103 controls the first nozzle movement part 6a to move the first nozzle 51a from the first retraction position to the processing position.

[0116] When the rotational speed of the substrate W reaches a predetermined rotational speed, the control unit 103 performs SPM processing (step S2). Specifically, the control unit 103 changes the self-closed state of the first processing liquid on / off valve 531 and the second processing liquid on / off valve 532 to the open state. Therefore, SPM is sprayed from the first nozzle 51a onto the rotating substrate W held in the substrate holding part 3, forming a liquid film of SPM on the upper surface of the substrate W. The SPM discharged from the rotating substrate W is received by the first liquid receiving part 71 and then discharged to the cooling unit 800.

[0117] When a predetermined time has elapsed since the start of SPM spraying, the control unit 103 changes the second processing liquid on / off valve 532 from the open state to the closed state. Therefore, hydrogen peroxide water is sprayed from the first nozzle 51a onto the rotating substrate W held in the substrate holding part 3, forming a liquid film of hydrogen peroxide water on the upper surface of the substrate W. Furthermore, the control unit 103 moves the first protective cover part 711 from the first upper position to the first lower position. Therefore, the hydrogen peroxide water discharged from the rotating substrate W is received by the second liquid receiving part 72 and discharged into the drain tank 400A.

[0118] When a predetermined time has elapsed since the start of the hydrogen peroxide water spraying, the control unit 103 performs the first rinsing process (step S3). The first rinsing process refers to the process of supplying warm water to the substrate W.

[0119] Specifically, the control unit 103 changes the first processing liquid on / off valve 531 from the open state to the closed state, stopping the spraying of hydrogen peroxide water from the first nozzle 51a. Furthermore, the control unit 103 controls the first nozzle moving part 6a to move the first nozzle 51a from the processing position to the first retraction position, and controls the third nozzle moving part 6c to move the third nozzle 51c from the third retraction position to the processing position. Then, the fourth processing liquid on / off valve 534 changes from the closed state to the open state, spraying warm water from the third nozzle 51c onto the rotating substrate W held in the substrate holding part 3. Therefore, a film of warm water (rinsing liquid) is formed on the upper surface of the substrate W. The warm water (rinsing liquid) discharged from the rotating substrate W is received by the second receiving part 72 and then discharged into the drain tank 400A.

[0120] When a predetermined time has elapsed since the start of the warm water spray, the control unit 103 executes the SC1 process (step S4).

[0121] Specifically, the control unit 103 changes the fourth processing liquid on / off valve 534 from the open state to the closed state, stopping the spraying of warm water (rinsing liquid) from the third nozzle 51c. Furthermore, the control unit 103 controls the third nozzle moving part 6c to move the third nozzle 51c from the processing position to the third retraction position, and controls the second nozzle moving part 6b to move the second nozzle 51b from the second retraction position to the processing position. Then, the third processing liquid on / off valve 533 changes from the closed state to the open state, spraying SC1 from the second nozzle 51b onto the rotating substrate W held in the substrate holding part 3. Therefore, a liquid film of SC1 is formed on the upper surface of the substrate W. The SC1 discharged from the rotating substrate W is received by the second liquid receiving part 72 and then discharged into the drain tank 400A.

[0122] When a predetermined time has elapsed since the ejection of SC1, the control unit 103 performs the second rinsing process (step S5). The second rinsing process refers to the process of supplying room temperature DIW to the substrate W.

[0123] Specifically, the control unit 103 changes the third processing liquid on / off valve 533 from the open state to the closed state, stopping the ejection of SC1 from the second nozzle 51b. Furthermore, the control unit 103 controls the second nozzle moving part 6b to move the second nozzle 51b from the processing position to the second retraction position, and controls the third nozzle moving part 6c to move the third nozzle 51c from the third retraction position to the processing position. Then, the fifth processing liquid on / off valve 535 changes from the closed state to the open state, ejecting room-temperature DIW from the third nozzle 51c onto the rotating substrate W held in the substrate holding part 3. Therefore, a liquid film of DIW (rinsing liquid) is formed on the upper surface of the substrate W. The DIW (rinsing liquid) discharged from the rotating substrate W is received by the second receiving part 72 and then discharged into the drain tank 400A.

[0124] When a predetermined time has elapsed since the DIW (distilled liquid) began to be ejected from the room temperature nozzle, the control unit 103 changes the fifth processing liquid on / off valve 535 from the open state to the closed state. After the DIW ejection from the third nozzle 51c stops, a drying process is performed to dry the substrate W (step S6). Specifically, the substrate rotation unit 4 is controlled to increase the rotation speed of the substrate W. Therefore, the substrate W dries. The DIW (rinsing liquid) discharged from the rotating substrate W is received by the second receiving unit 72 and discharged into the drain tank 400A. Furthermore, after the DIW ejection from the third nozzle 51c stops, the control unit 103 controls the third nozzle moving unit 6c to move the third nozzle 51c from the processing position to the third retraction position.

[0125] When the rotation speed of the substrate W increases for a predetermined time, the control unit 103 controls the substrate rotation unit 4 to stop the rotation of the substrate W, and then removes the processed substrate W from the processing chamber 101a (step S7). Therefore, the processing shown in FIG3 is completed.

[0126] Specifically, when the rotation of the substrate W stops, the control unit 103 controls the liquid-receiving moving unit 75 to move the second protective cover 721 and the third protective cover 73 from the second upper position and the third upper position to the second lower position and the third lower position, respectively. After the second protective cover 721 and the third protective cover 73 have moved, the control unit 103 controls the substrate holding unit 3 to release the substrate W from its holding position. Then, the control unit 103 controls the central robot CR to move the substrate W to the outside of the processing chamber 101a.

[0127] Next, referring to FIG4, the substrate processing apparatus 100 of this embodiment will be described. FIG4 is a diagram showing a portion of the configuration of the substrate processing apparatus 100 of this embodiment. Specifically, FIG4 shows the warm water unit 200, the warm water circulation pipeline 22, and the first tower TW1.

[0128] As shown in Figure 4, the substrate processing apparatus 100 of this embodiment further includes a warm water unit 200 and a warm water circulation pipeline 22.

[0129] The warm water unit 200 adjusts the temperature of the liquid contained in the rinsing fluid (second processing fluid), which has a temperature higher than room temperature, to the temperature of the target liquid. The warm water unit 200 is an example of a "temperature adjustment unit." As explained, in this embodiment, the rinsing fluid is pure water. Therefore, the target liquid is pure water. More specifically, the target liquid is DIW (diluted water). The warm water unit 200 adjusts the temperature of the DIW to generate warm water. In detail, the warm water unit 200 raises the temperature of the DIW to the processing temperature (target temperature). The warm water unit 200 is an example of a "temperature raising unit."

[0130] The warm water circulation line 22 circulates the warm water generated by the warm water unit 200. Specifically, the warm water circulation line 22 includes: a common warm water pipe 23, a first warm water circulation pipe 23a, a second warm water circulation pipe 23b, a third warm water circulation pipe 23c, a fourth warm water circulation pipe 23d, a warm water circulation pump 24, a first heater 25, a first warm water filter 26a, a second warm water filter 26b, a third warm water filter 26c, and a fourth warm water filter 26d. The warm water unit 200 has a warm water tank 21. The common warm water pipe 23, a portion of each of the first to fourth warm water circulation pipes 23a to 23d, the warm water circulation pump 24, the first heater 25, the first to fourth warm water filters 26a to 26d, and the warm water tank 21 are housed within the warm water unit 200.

[0131] The warm water tank 21 stores DIW. The warm water circulation line 22 circulates the DIW through the warm water tank 21.

[0132] In detail, the common warm water pipe 23, the first warm water circulation pipe 23a, the second warm water circulation pipe 23b, the third warm water circulation pipe 23c, and the fourth warm water circulation pipe 23d are tubular components for the flow of the treatment liquid. One end of the common warm water pipe 23 is connected to the warm water tank 21 and communicates with the inner space of the warm water tank 21. The warm water circulation pump 24 and the first heater 25 are installed in the common warm water pipe 23. Specifically, the warm water circulation pump 24 is installed downstream of the first heater 25. One end of each of the first warm water circulation pipe 23a, the second warm water circulation pipe 23b, the third warm water circulation pipe 23c, and the fourth warm water circulation pipe 23d is connected to the other end of the common warm water pipe 23 and communicates with the common warm water pipe 23. The other end of each of the first warm water circulation pipe 23a, the second warm water circulation pipe 23b, the third warm water circulation pipe 23c and the fourth warm water circulation pipe 23d is connected to the warm water tank 21 and communicates with the inner space of the warm water tank 21.

[0133] The warm water circulation pump 24 delivers DIW (diluted water) from the common warm water pipe 23 to one end of each of the first to fourth warm water circulation pipes 23a to 23d. Therefore, when the warm water circulation pump 24 is activated, the DIW in the warm water tank 21 flows into the first, second, third, and fourth warm water circulation pipes 23a, 23b, 23c, and 23d respectively via the common warm water pipes 23. The operation of the warm water circulation pump 24 is controlled by the control unit 103.

[0134] The first heater 25 adjusts the temperature of the DIW flowing in the common warm water pipe 23 to the processing temperature. Specifically, the first heater 25 adjusts the temperature of the DIW to set it to warm water. Therefore, warm water flows into the first warm water circulation pipe 23a, the second warm water circulation pipe 23b, the third warm water circulation pipe 23c, and the fourth warm water circulation pipe 23d. The warm water flowing through the first warm water circulation pipe 23a, the second warm water circulation pipe 23b, the third warm water circulation pipe 23c, and the fourth warm water circulation pipe 23d returns to the warm water tank 21 from the other end of each of these pipes. The first heater 25 is controlled by the control unit 103.

[0135] The first warm water filter 26a, the second warm water filter 26b, the third warm water filter 26c, and the fourth warm water filter 26d are respectively installed in the first warm water circulation pipe 23a, the second warm water circulation pipe 23b, the third warm water circulation pipe 23c, and the fourth warm water circulation pipe 23d. The first warm water filter 26a removes foreign matter from the warm water flowing through the first warm water circulation pipe 23a. Similarly, the second to fourth warm water filters 26b and 26d remove foreign matter from the warm water flowing through the second to fourth warm water circulation pipes 23b and 23d, respectively.

[0136] The first warm water circulation pipe 23a, the second warm water circulation pipe 23b, the third warm water circulation pipe 23c, and the fourth warm water circulation pipe 23d correspond to the first tower TW1, the second tower TW2, the third tower TW3, and the fourth tower TW4, respectively. Figure 4 illustrates the relationship between the first tower TW1 and the first warm water circulation pipe 23a.

[0137] As shown in Figure 4, warm water is supplied from the first warm water circulation pipe 23a to the third processing liquid supply unit 5c contained in each of the three substrate processing sections 101 forming the first tower TW1. Specifically, the other end of the fourth processing liquid pipe 524 contained in each of the third processing liquid supply units 5c is connected to the first warm water circulation pipe 23a. Therefore, the third processing liquid supply unit 5c supplies DIW (temperature-controlled water) adjusted in temperature by the warm water unit 200 to the substrate W. Specifically, the third processing liquid supply unit 5c supplies DIW (warm water) heated by the warm water unit 200 to the substrate W.

[0138] Next, referring to FIG5, the substrate processing apparatus 100 of this embodiment will be described. FIG5 is a diagram showing the configuration of the second processing liquid supply unit 5b included in the substrate processing apparatus 100 of this embodiment.

[0139] As shown in Figure 5, the second processing fluid supply unit 5b, in addition to the second nozzle 51b, the third processing fluid piping 523, and the third processing fluid on / off valve 533, further includes: a mixer 54, a first upstream side piping 523a, a second upstream side piping 523b, a third upstream side piping 523c, a first upstream side on / off valve 533a, a second upstream side on / off valve 533b, and a third upstream side on / off valve 533c.

[0140] The first upstream pipe 523a to the third upstream pipe 523c are each a tubular component that allows the treatment liquid to flow. One end (downstream end) of each of the first upstream pipe 523a to the third upstream pipe 523c is connected to the mixer 54. The first upstream pipe 523a allows ammonia water to flow to the mixer 54. The second upstream pipe 523b allows hydrogen peroxide water to flow to the mixer 54. The third upstream pipe 523c allows warm water to flow to the mixer 54. Specifically, the other end (upstream end) of the third upstream pipe 523c is connected to one of the corresponding first warm water circulation pipes 23a to the fourth warm water circulation pipes 23d as shown in FIG4. Alternatively, the other end of the third upstream pipe 523c can be connected to the corresponding fourth treatment liquid pipe 524.

[0141] The first upstream on-off valve 533a, the second upstream on-off valve 533b, and the third upstream on-off valve 533c are respectively installed on the first upstream piping 523a, the second upstream piping 523b, and the third upstream piping 523c. Furthermore, since the configuration of the first upstream on-off valve 533a, the second upstream on-off valve 533b, and the third upstream on-off valve 533c is substantially the same as that of the first processing fluid on-off valve 531 and the second processing fluid on-off valve 532 described with reference to FIG2, their detailed description is omitted.

[0142] When the first upstream on-off valve 533a, the second upstream on-off valve 533b, and the third upstream on-off valve 533c are in the open state, ammonia, hydrogen peroxide solution, and warm water are supplied to the mixer 54. The mixer 54 has an internal flow path, in which the ammonia, hydrogen peroxide solution, and warm water are mixed to produce SC1, which has a temperature higher than room temperature. The other end (downstream end) of the third processing liquid pipe 523 is connected to the mixer 54 and communicates with the internal flow path of the mixer 54. Therefore, SC1 is supplied to the third processing liquid pipe 523. Here, the warm water contained in SC1 is an example of a "temperature-increasing target liquid".

[0143] Next, referring to Figures 6 to 8, the substrate processing apparatus 100 of this embodiment will be described. Figure 6 is a diagram showing the configuration of the warm water supply line 11A, the warm water unit 200, and the cooling unit 800 included in the substrate processing apparatus 100 of this embodiment. First, referring to Figure 6, the cooling unit 800 included in the substrate processing apparatus 100 of this embodiment will be described.

[0144] As shown in Figure 6, the substrate processing apparatus 100 further includes drain pipes 301b, 301c, and 301d. A portion of each of drain pipes 301a, 301b, 301c, and 301d is housed within the cooling unit 800.

[0145] As illustrated with Figure 2, drain pipe 301a discharges used SPM from tower TW1 to cooling unit 800. Drain pipes 301b to 301c are similar to drain pipe 301a, discharging used SPM from tower TW2 to tower TW4 to cooling unit 800.

[0146] As illustrated with reference to FIG2, the cooling unit 800 cools the used SPM discharged from each tower TW. Specifically, the cooling unit 800 includes: a cooling tank 8, a heat exchanger 82, a buffer tank 83, a quantitative water level sensor 83a, a cooling circulation pipeline 84, a replenishment pipeline 9, a drain tank 400B, drain pipes 402a and 402b, and a drain pump 403. The cooling tank 8, heat exchanger 82, buffer tank 83, quantitative water level sensor 83a, cooling circulation pipeline 84, drain tank 400B, a portion of drain pipes 402a and 402b, and drain pump 403 are housed within the cooling unit 800.

[0147] Cooling tank 8 stores used SPM (Solution to be cooled). Cooling tank 8 is an example of "tank 1". In detail, cooling tank 8 stores used SPM discharged from tower 1 TW1 to tower 4 TW4.

[0148] Specifically, the used SPM discharged from Tower 1 (TW1) flows into the cooling tank 8 via drain pipe 301a. One end of drain pipe 301b is connected to drain pipe 301a. The used SPM discharged from Tower 2 (TW2) flows from drain pipe 301b into drain pipe 301a, and then into the cooling tank 8 via drain pipe 301a. The used SPM discharged from Tower 3 (TW3) flows into the cooling tank 8 via drain pipe 301c. One end of drain pipe 301d is connected to drain pipe 301c. The used SPM discharged from Tower 4 (TW4) flows from drain pipe 301d into drain pipe 301c, and then into the cooling tank 8 via drain pipe 301c.

[0149] A heat exchanger 82 is disposed within a cooling tank 8. The heat exchanger 82 cools the used SPM (strained liquid) stored in the cooling tank 8 by circulating a DIW (cooled liquid) at a lower temperature than the used SPM (strained liquid). Specifically, the heat exchanger 82 has an internal flow path. Heat exchange occurs between the used SPM and the DIW by circulating the DIW within the internal flow path of the heat exchanger 82. Therefore, the used SPM (strained liquid) is cooled, and the DIW (cooled liquid) is heated. For example, the heat exchanger 82 may include a tubular component for the circulation of the liquid (DIW).

[0150] The replenishment line 9 supplies DIW (heating solution) with a temperature lower than that of the used SPM (cooling solution) to the buffer tank 83. The buffer tank 83 stores DIW (heating solution) with a temperature lower than that of the used SPM (cooling solution). Specifically, room temperature DIW (heating solution) is supplied from the factory equipped with the substrate processing apparatus 100 to the replenishment line 9. The replenishment line 9 supplies room temperature DIW (heating solution) to the buffer tank 83. The buffer tank 83 is an example of "tank 2". The replenishment line 9 is an example of "second supply line".

[0151] According to this embodiment, only room-temperature DIW needs to be supplied to the cooling unit 800 from the factory; there is no need to supply cooling water to the cooling unit 800 from the factory. Therefore, the power required for cooling the DIW can be reduced. Furthermore, according to this embodiment, since the DIW, which heats up through heat exchange with the used SPM, is used for rinsing fluid and SC1, there is no need for factory equipment to cool the DIW that heats up through heat exchange with the used SPM. Therefore, the power required for cooling the DIW can be reduced.

[0152] The cooling circulation line 84 circulates the DIW (temperature-dependent liquid) between the heat exchanger 82 and the buffer tank 83. Specifically, the cooling circulation line 84 includes: an upstream cooling pipe 84a, a downstream cooling pipe 84b, a cooling circulation pump 85, and a circulation on / off valve 86A.

[0153] The upstream cooling pipe 84a and the downstream cooling pipe 84b are tubular components for the flow of liquid-in-water (DIW). One end of the upstream cooling pipe 84a is connected to the buffer tank 83 and communicates with the inner space of the buffer tank 83. Specifically, one end of the upstream cooling pipe 84a is connected to the bottom wall of the buffer tank 83. The other end of the upstream cooling pipe 84a is connected to the inlet of the heat exchanger 82 and communicates with the internal flow path of the heat exchanger 82. One end of the downstream cooling pipe 84b is connected to the outlet of the heat exchanger 82 and communicates with the internal flow path of the heat exchanger 82. The other end of the downstream cooling pipe 84b is connected to the buffer tank 83 and communicates with the inner space of the buffer tank 83. For example, the other end of the downstream cooling pipe 84b may be located in the inner space of the buffer tank 83.

[0154] A circulation on / off valve 86A is installed on the downstream cooling pipe 84b. The circulation on / off valve 86A controls the inflow of DIW (the liquid to be heated) from the downstream cooling pipe 84b to the buffer tank 83. Specifically, when the circulation on / off valve 86A is open, DIW flows from the downstream cooling pipe 84b into the buffer tank 83. When the circulation on / off valve 86A is closed, the inflow of DIW from the downstream cooling pipe 84b into the buffer tank 83 stops. Furthermore, since the configuration of the circulation on / off valve 86A is substantially the same as that of the first processing liquid on / off valve 531 and the second processing liquid on / off valve 532 described with reference to FIG2, its detailed description is omitted.

[0155] A cooling circulation pump 85 is installed in the upstream cooling pipe 84a. The cooling circulation pump 85 delivers DIW (diluted liquid) from the upstream cooling pipe 84a to the inlet of the heat exchanger 82. Therefore, when the cooling circulation pump 85 is activated, the DIW stored in the buffer tank 83 flows into the internal flow path of the heat exchanger 82 via the upstream cooling pipe 84a. Then, the DIW flows through the internal flow path of the heat exchanger 82 into the downstream cooling pipe 84b. The cooling circulation pump 85 is controlled by the control unit 103.

[0156] When the circulation valve 86A is open, the DIW (temperature-inducing liquid) flowing into the downstream cooling pipe 84b flows into the buffer tank 83 via the downstream cooling pipe 84b. Therefore, when the circulation valve 86A is open, the DIW circulates between the heat exchanger 82 and the buffer tank 83. On the other hand, when the circulation valve 86A is closed, the DIW flowing into the downstream cooling pipe 84b flows into the warm water supply line 11A described later.

[0157] A quantitative water level sensor 83a detects whether the water level of the DIW (dissolved liquid for heating) stored in the buffer tank 83 is within a specified range. The quantitative water level sensor 83a is an example of a "first water level sensor." The water level represents the height of the liquid surface from the bottom of the buffer tank 83. For example, the quantitative water level sensor 83a may be configured to detect the water level using laser light. The control unit 103 controls the replenishment line 9 based on the detection result of the quantitative water level sensor 83a. Specifically, the quantitative water level sensor 83a outputs a signal indicating whether the water level of the DIW stored in the buffer tank 83 is within a specified range. The control unit 103 controls the replenishment line 9 based on the signal output from the quantitative water level sensor 83a.

[0158] Here, referring to Figures 6 and 7, the first supplementary processing performed by the control unit 103 will be described. Figure 7 is a flowchart showing the first supplementary processing performed by the control unit 103 included in the substrate processing apparatus 100 of this embodiment. The first supplementary processing shown in Figure 7 can, for example, be repeated for each predetermined cycle.

[0159] As shown in Figure 7, when the first replenishment process begins, the control unit 103 determines, based on the signal output by the self-quantitative water level sensor 83a, whether the water level of the DIW stored in the buffer tank 83 has changed from above the specified water level to below the specified water level (step S11). If the control unit 103 determines that the water level of the DIW stored in the buffer tank 83 has changed from above the specified water level to below the specified water level (yes in step S11), it controls the replenishment pipeline 9 to supply room temperature DIW to the buffer tank 83 (step S12). If the control unit 103 determines that the water level of the DIW stored in the buffer tank 83 has not changed from above the specified water level to below the specified water level (no in step S11), it ends the first replenishment process shown in Figure 7.

[0160] After the control unit 103 begins supplying (replenishing) room-temperature DIW to the buffer tank 83, it determines, based on the signal output by the self-quantitative water level sensor 83a, whether the water level of the DIW stored in the buffer tank 83 has changed from a level below the specified level to above the specified level (step S13). The control unit 103 repeats the determination in step S13 until the water level of the DIW stored in the buffer tank 83 changes from a level below the specified level to above the specified level (step S13 No).

[0161] When the control unit 103 determines that the water level of the DIW stored in the buffer tank 83 has changed from below the specified water level to above the specified water level (as determined in step S13), it controls the replenishment pipeline 9 to stop the supply of room temperature DIW from the replenishment pipeline 9 to the buffer tank 83 (step S14). Therefore, the first replenishment process shown in Figure 7 is completed.

[0162] As shown in Figure 6, the supplementary pipeline 9 includes a supplementary piping 91 and a supplementary on / off valve 92. A portion of the supplementary piping 91 and the supplementary on / off valve 92 are housed within the cooling unit 800.

[0163] The supplementary piping 91 is a tubular component for the flow of liquid water (DIW). One end of the supplementary piping 91 is connected to the buffer tank 83 and communicates with the inner space of the buffer tank 83. For example, one end of the supplementary piping 91 may be located in the inner space of the buffer tank 83. Room temperature DIW is supplied from the factory where the substrate processing apparatus 100 is installed to the supplementary piping 91.

[0164] A supplementary on / off valve 92 is provided on the supplementary piping 91. The supplementary on / off valve 92 controls the flow of DIW (the liquid to be heated) through the supplementary piping 91 (supplementary line 9). Specifically, when the supplementary on / off valve 92 is open, the DIW (the liquid to be heated) flows through the supplementary piping 91 (supplementary line 9). When the supplementary on / off valve 92 is closed, the flow of DIW (the liquid to be heated) through the supplementary piping 91 (supplementary line 9) stops. Furthermore, since the configuration of the supplementary on / off valve 92 is substantially the same as that of the first processing liquid on / off valve 531 and the second processing liquid on / off valve 532 described with reference to FIG2, its detailed description is omitted.

[0165] Based on the detection results of the quantitative water level sensor 83a, the control unit 103 controls the supplementary on / off valve 92. Specifically, when the control unit 103 determines that the water level of the DIW stored in the buffer tank 83 has changed from above the specified water level to below the specified water level, the supplementary on / off valve 92 changes from the closed state to the open state. Therefore, room temperature DIW is supplied to the buffer tank 83 from the supplementary piping 91 (supplementary line 9). Furthermore, when the control unit 103 determines that the water level of the DIW stored in the buffer tank 83 has changed from below the specified water level to above the specified water level, the supplementary on / off valve 92 changes from the open state to the closed state. Therefore, the supply of room temperature DIW to the buffer tank 83 from the supplementary line 9 is stopped.

[0166] Drain pipe 402a is a tubular component for the flow of process fluid (SPM). One end of drain pipe 402a is connected to the bottom wall of cooling tank 8 and communicates with the inner space of cooling tank 8. The other end of drain pipe 402b is connected to drain tank 400B and communicates with the inner space of drain tank 400B. Drain tank 400B is located below cooling tank 8.

[0167] SPM cooled by heat exchanger 82 flows from cooling tank 8 to drain pipe 402a. SPM flowing out of cooling tank 8 to drain pipe 402a flows into drain tank 400B via drain pipe 402a. Therefore, SPM cooled by heat exchanger 82 is stored in drain tank 400B.

[0168] Specifically, the cooling tank 8 has a partition plate 81. The partition plate 81 is disposed in the inner space of the cooling tank 8. The partition plate 81 extends upward from the bottom wall of the cooling tank 8. The upper end of the partition plate 81 faces the top wall of the cooling tank 8. There is a gap between the upper end of the partition plate 81 and the top wall of the cooling tank 8. The partition plate 81 divides the inner space of the cooling tank 8 into a storage section 8a and a discharge section 8b. The used SPM discharged from the first tower TW1 to the fourth tower TW4 flows into the storage section 8a. A heat exchanger 82 is disposed in the storage section 8a to cool the SPM stored in the storage section 8a.

[0169] The water level of SPM stored in storage section 8a increases by the discharge of used SPM from tower 1 TW1 to tower 4 TW4. When the water level of SPM stored in storage section 8a exceeds the upper end of partition plate 81, SPM flows out of storage section 8a to discharge section 8b.

[0170] One end of the drain pipe 402a is connected to the discharge section 8b. Therefore, the SPM that flows from the storage section 8a to the discharge section 8b, passing over the upper end of the partition plate 81, flows into the drain pipe 402a.

[0171] According to this embodiment, the SPM after use is cooled by the heat exchanger 82 before passing the upper end of the partition plate 81. Therefore, the SPM after use can be cooled more reliably.

[0172] The drain pipe 402b is a tubular component for the flow of process fluid (SPM). One end of the drain pipe 402b is connected to the drain tank 400B and communicates with the internal space of the drain tank 400B. Therefore, the SPM stored in the drain tank 400B flows into the drain pipe 402b. The drain pipe 402b extends from the inside of the cooling unit 800 to the outside. A drain pump 403 is installed on the drain pipe 402b. The drain pump 403 is controlled by the control unit 103.

[0173] The drain pump 403 delivers the SPM within the drain pipe 402b to the outside of the cooling unit 800. Therefore, when the drain pump 403 is activated, the SPM within the drain tank 400B is discharged to the outside of the cooling unit 800 via the drain pipe 402b. Specifically, the SPM within the drain tank 400B is discharged via the drain pipe 402b to the first waste liquid equipment of the factory equipped with the substrate processing apparatus 100.

[0174] Next, referring to FIG6, the warm water supply line 11A included in the substrate processing apparatus 100 of this embodiment will be described. As shown in FIG6, the substrate processing apparatus 100 further includes the warm water supply line 11A.

[0175] Warm water supply line 11A supplies DIW (heating target liquid) from cooling unit 800 to warm water unit 200. Warm water supply line 11A is an example of "first supply line". More specifically, warm water supply line 11A supplies DIW (heating target liquid), which flows in heat exchanger 82 and is heated by used SPM (cooling target liquid), to warm water unit 200. Warm water unit 200 adjusts the temperature of DIW (heating target liquid) supplied to warm water unit 200 via warm water supply line 11A.

[0176] In this embodiment, the warm water supply line 11A branches off from the cooling circulation line 84. Specifically, the warm water supply line 11A includes a warm water supply piping 111a and a warm water on / off valve 112. A portion of the warm water supply piping 111a and the warm water on / off valve 112 are housed within the cooling unit 800.

[0177] The warm water supply pipe 111a is a tubular component for the flow of liquid water (DIW). One end of the warm water supply pipe 111a is connected to and communicates with the downstream cooling pipe 84b. The circulation on / off valve 86A is located in the downstream cooling pipe 84b, positioned downstream of the connection point P3 between the downstream cooling pipe 84b and the warm water supply pipe 111a. Therefore, when the circulation on / off valve 86A is closed, the DIW heated by the heat exchanger 82 flows from the downstream cooling pipe 84b into the warm water supply pipe 111a (warm water supply line 11A).

[0178] The warm water on / off valve 112 controls the flow of DIW (the liquid to be heated) through the warm water supply pipe 111a. When the warm water on / off valve 112 is open, the DIW (the liquid to be heated) flowing from the downstream cooling pipe 84b into the warm water supply pipe 111a flows through the warm water supply pipe 111a. When the warm water on / off valve 112 is closed, the flow of DIW (the liquid to be heated) through the warm water supply pipe 111a stops. Furthermore, since the configuration of the warm water on / off valve 112 is substantially the same as that of the first processing liquid on / off valve 531 and the second processing liquid on / off valve 532 described with reference to FIG2, its detailed description is omitted.

[0179] Next, referring to FIG6, the warm water unit 200 included in the substrate processing apparatus 100 of this embodiment will be described. As shown in FIG6, the warm water unit 200 further includes a warm water supply line 11B and a temperature sensor 115.

[0180] The warm water replenishment line 11B allows the DIW (dissolved liquid for heating) supplied to the warm water unit 200 via the warm water supply line 11A to flow to the warm water tank 21. Therefore, the warm water tank 21 stores the DIW (dissolved liquid for heating) supplied to the warm water unit 200 via the warm water supply line 11A. In other words, the warm water tank 21 stores the DIW (dissolved liquid for heating) supplied from the cooling unit 800 to the warm water unit 200. The warm water tank 21 is an example of a "third tank".

[0181] In detail, the DIW (temperature-controlled liquid) heated by the heat exchanger 82 flows into the warm water replenishment line 11B via the warm water supply line 11A. The warm water replenishment line 11B allows the DIW (temperature-controlled liquid) heated by the heat exchanger 82 to circulate to the warm water tank 21. Therefore, the warm water tank 21 stores the DIW (temperature-controlled liquid) heated by heat exchange with the used SPM.

[0182] Specifically, the warm water supply line 11B includes a warm water supply piping 111b, a second heater 113, and a supply filter 114.

[0183] The warm water supply pipe 111b is a tubular component for the flow of liquid-to-water (DIW). One end of the warm water supply pipe 111b is connected to the other end (downstream end) of the warm water supply pipe 111a, thus communicating with the warm water supply pipe 111a. The other end of the warm water supply pipe 111b is connected to the warm water tank 21, thus communicating with the inner space of the warm water tank 21. Therefore, the DIW (the liquid to be heated) heated by the heat exchanger 82 flows from the warm water supply pipe 111a into the warm water supply pipe 111b. The warm water supply pipe 111b allows the DIW (the liquid to be heated) supplied from the warm water supply pipe 111a to flow to the warm water tank 21.

[0184] The supplementary filter 114 is installed in the warm water supply pipe 111b to remove foreign matter from the DIW flowing through the warm water supply pipe 111b.

[0185] The second heater 113 adjusts the temperature of the DIW (target liquid for heating) supplied from the cooling unit 800 to the warm water unit 200 via the warm water supply line 11A. The second heater 113 is an example of a "heater". Specifically, the second heater 113 is installed in the warm water supply line 111b and heats the DIW (target liquid for heating) flowing in the warm water supply line 111b to the processing temperature (target temperature). Therefore, even if the temperature of the DIW (target liquid for heating) heated by the heat exchanger 82 does not reach the processing temperature, the DIW (target liquid for heating) heated to the processing temperature by the second heater 113 is stored in the warm water tank 21.

[0186] According to this embodiment, the second heater 113 heats the DIW (the liquid to be heated) that has been heated by the heat exchanger 82. Therefore, the load on the second heater 113 can be reduced. Therefore, the power consumption of the second heater 113 can be reduced.

[0187] In this embodiment, temperature sensor 115 detects the temperature of DIW (temperature-controlled liquid) supplied to warm water unit 200 via warm water supply line 11A, and control unit 103 controls second heater 113 based on the temperature detected by temperature sensor 115.

[0188] Specifically, temperature sensor 115 detects the temperature of the DIW flowing in the hot water supply pipe 111b upstream of the second heater 113. Temperature sensor 115 outputs a signal corresponding to the detected temperature. Control unit 103 receives the signal output from temperature sensor 115.

[0189] Here, referring to Figures 6 and 8, the heating process performed by the control unit 103 will be described. Figure 8 is a flowchart showing the heating process performed by the control unit 103 included in the substrate processing apparatus 100 of this embodiment. The heating process shown in Figure 8 can, for example, be repeated for each predetermined cycle.

[0190] As shown in Figure 8, when the heating process begins, the control unit 103 determines the temperature of the DIW supplied from the cooling unit 800 to the warm water unit 200 based on the signal received from the temperature sensor 115 (step S21), and controls the output of the second heater 113 based on the determined temperature (step S22). Therefore, the heating process shown in Figure 8 ends. Specifically, the control unit 103 adjusts (changes) the set temperature in the second heater 113 based on the determined temperature. Therefore, the temperature of the DIW flowing into the warm water tank 21 from the warm water supply pipe 111b is adjusted to the processing temperature.

[0191] According to this embodiment, the control unit 103 controls the output of the second heater 113 based on the temperature detected by the temperature sensor 115. Therefore, the power consumption of the second heater 113 can be further reduced.

[0192] Furthermore, the control unit 103 can control the first heater 25 in the same way as the second heater 113. Specifically, the warm water unit 200 may further include a temperature sensor that detects the temperature of the DIW flowing through the warm water common pipe 23 upstream of the first heater 25. The control unit 103 can control the first heater 25 based on the temperature of the DIW flowing through the warm water common pipe 23.

[0193] Next, referring to Figures 6, 9A, 9B, and 10, the cooling unit 800, the warm water supply line 11A, and the warm water unit 200 included in the substrate processing apparatus 100 of this embodiment will be described. Figure 9A is a diagram showing the first state of the cooling unit 800, the warm water supply line 11A, and the warm water unit 200 included in the substrate processing apparatus 100 of this embodiment. Figure 9B is a diagram showing the second state of the cooling unit 800, the warm water supply line 11A, and the warm water unit 200 included in the substrate processing apparatus 100 of this embodiment. Figure 10 is a flowchart showing the second supplementary processing performed by the control unit 103 included in the substrate processing apparatus 100 of this embodiment. The second supplementary processing shown in Figure 10 can, for example, be repeated for each predetermined cycle. Furthermore, in Figures 9A and 9B, some components of the cooling unit 800 and the warm water unit 200 are omitted for the sake of simplification.

[0194] As shown in Figures 6, 9A and 9B, the warm water unit 200 further includes a quantitative water level sensor 21a and a supplementary water level sensor 21b.

[0195] The quantitative water level sensor 21a detects whether the water level of the DIW (dissolved liquid to be heated) stored in the warm water tank 21 is at a predetermined first water level. The replenishment water level sensor 21b detects whether the water level of the DIW (dissolved liquid to be heated) stored in the warm water tank 21 is at a predetermined second water level. Here, the first water level refers to a water level higher than the second water level. The replenishment water level sensor 21b is an example of a "second water level sensor". Since the configuration of the quantitative water level sensor 21a and the replenishment water level sensor 21b is substantially the same as that of the quantitative water level sensor 83a, their detailed description is omitted.

[0196] Based on the detection results of the replenishment water level sensor 21b, the control unit 103 controls the supply of DIW (the target liquid for heating) to the warm water unit 200 via the warm water supply line 11A. In this embodiment, the control unit 103 controls the supply of DIW to the warm water unit 200 via the warm water supply line 11A based on the detection results of the replenishment water level sensor 21b and the quantitative water level sensor 21a. Specifically, the control unit 103 controls the circulation on / off valve 86A and the warm water on / off valve 112 based on the detection results of the replenishment water level sensor 21b and the quantitative water level sensor 21a.

[0197] In detail, as shown in Figure 10, the control unit 103 determines, based on the signal output by the self-replenishing water level sensor 21b, whether the water level of the DIW stored in the warm water tank 21 has changed from above the second water level to below the second water level (step S31). When the control unit 103 determines that the water level of the DIW stored in the warm water tank 21 has changed from above the second water level to below the second water level (yes in step S31), it controls the circulation on / off valve 86A and the warm water on / off valve 112 to supply the DIW after passing through the heat exchanger 82 from the cooling unit 800 to the warm water unit 200 (step S32).

[0198] Specifically, the control unit 103 changes the circulation on / off valve 86A from the open state to the closed state, and changes the warm water on / off valve 112 from the closed state to the open state. Therefore, as shown in FIG9B, the DIW after passing through the heat exchanger 82 is supplied from the warm water supply line 11A to the warm water replenishment line 11B, and the DIW after passing through the heat exchanger 82 is replenished to the warm water tank 21.

[0199] On the other hand, when the control unit 103 determines that the water level of the DIW stored in the warm water tank 21 has not changed from above the second water level to below the second water level (No in step S31), the second supplementary processing shown in FIG10 ends.

[0200] When the control unit 103 starts supplying DIW from the cooling unit 800 to the warm water unit 200, it determines, based on the signal output by the automatic quantitative water level sensor 21a, whether the water level of the DIW stored in the warm water tank 21 has changed from below the first water level to above the first water level (step S33). The control unit 103 repeats the determination in step S33 until the water level of the DIW stored in the warm water tank 21 changes from below the first water level to above the first water level (step S33 - no).

[0201] The control unit 103 determines that the water level of the DIW stored in the warm water tank 21 has changed from below the first water level to above the second water level (Yes in step S33), and stops the supply of DIW from the warm water supply line 11A to the warm water unit 200 (step S34). Therefore, the second supplementary processing shown in FIG10 ends.

[0202] In detail, the control unit 103 changes the self-closed state of the circulation on / off valve 86A to the open state, and changes the self-open state of the warm water on / off valve 112 to the closed state. Therefore, as shown in Figure 9A, the supply of DIW from the warm water supply line 11A to the warm water replenishment line 11B is stopped, and the replenishment of DIW to the warm water tank 21 is stopped.

[0203] Furthermore, in the second state shown in Figure 9B, the DIW supplied from the buffer tank 83 to the heat exchanger 82 is supplied to the warm water supply line 11A and does not return to the buffer tank 83. Therefore, the water level in the buffer tank 83 decreases. As explained with reference to Figure 6, the control unit 103 determines that the water level of the DIW stored in the buffer tank 83 has changed from above the specified water level to below the specified water level, and changes the self-closed state of the supplementary on / off valve 92 to the open state, supplying room temperature DIW to the buffer tank 83.

[0204] Furthermore, in the first state shown in Figure 9A, the DIW supplied from the buffer tank 83 to the heat exchanger 82 returns to the buffer tank 83. Therefore, the water level in the buffer tank 83 does not decrease. The control unit 103, upon determining that the water level of the DIW stored in the buffer tank 83 has changed from below the specified level to above the specified level, changes the replenishment valve 92 from the open state to the closed state, stopping the supply of DIW from the replenishment pipeline 9 to the buffer tank 83.

[0205] Next, referring to FIGS. 1 to 14, the substrate processing method of this embodiment will be described. FIG. 11 is a diagram showing the substrate processing method of this embodiment. The substrate processing method shown in FIG. 11 is performed by the substrate processing apparatus 100 described with reference to FIGS. 1 to 10. As shown in FIG. 11, the substrate processing method of this embodiment includes steps S41 to S46.

[0206] First, SPM is supplied to the substrate W via the first processing liquid supply unit 5a (step S41). The SPM (cooling target liquid) supplied to the substrate W is discharged into the cooling tank 8 within the cooling unit 800 (step S42). Specifically, the used SPM discharged from the substrate W is received by the first liquid receiving unit 71. The used SPM received by the first liquid receiving unit 71 is discharged into the cooling tank 8 via drain pipes 301a, 301b, 301c, or 301d.

[0207] The used SPM (cooling target liquid) stored in the cooling tank 8 exchanges heat with DIW (heating target liquid) at a lower temperature than the used SPM (cooling target liquid) through the heat exchanger 82. As a result, the used SPM (cooling target liquid) is cooled (step S43; cooling process). For example, the used SPM (cooling target liquid) stored in the cooling tank 8 is cooled by DIW (heating target liquid) circulating between the buffer tank 83 and the heat exchanger 82.

[0208] The heated liquid water (DIW) is supplied from the cooling unit 800 to the warm water unit 200 through heat exchange with the used SPM (cooling target liquid) (step S44; supply process). Specifically, the DIW (heated target liquid) after the heat exchanger 82 is supplied from the cooling circulation line 84 to the warm water supply line 11A to the warm water unit 200. In detail, based on the detection result of the replenishment water level sensor 21b, the control unit 103 changes the circulation on / off valve 86A from the open state to the closed state and changes the warm water on / off valve 112 from the closed state to the open state. Therefore, the DIW (heated target liquid) after the heat exchanger 82 is supplied to the warm water unit 200.

[0209] The temperature of the DIW (temperature-controlled liquid) supplied to the warm water unit 200 via the warm water supply line 11A is adjusted (step S45). Specifically, the temperature of the DIW (temperature-controlled liquid) supplied to the warm water unit 200 via the warm water supply line 11A is adjusted by the first heater 25 and the second heater 113.

[0210] Then, the rinsing solution containing the DIW (temperature-adjusted target liquid) whose temperature has been adjusted by the warm water unit 200 is supplied to the substrate W through the third processing liquid supply unit 5c (step S46).

[0211] Figure 12 shows the supply process (step S44) of Figure 11. As shown in Figure 12, the supply process (step S44) of Figure 11 includes step S441. Specifically, in the supply process, based on the water level of the DIW (the liquid to be heated) stored in the warm water tank 21, the supply of DIW (the liquid to be heated) from the cooling unit 800 to the warm water unit 200 is controlled (step S441). In detail, as explained with reference to Figures 6, 9A, 9B and 10, the control unit 103 controls the circulation valve 86A and the warm water valve 112 based on the detection results of the replenishment water level sensor 21b and the quantitative water level sensor 21a.

[0212] Figure 13 is a diagram showing the supplementary steps included in the substrate processing method of this embodiment. The substrate processing method of this embodiment includes the supplementary steps shown in Figure 13. The supplementary steps can be performed in parallel with the supply step (step S44) in Figure 11, for example.

[0213] As shown in Figure 13, the replenishment process includes step S442. Specifically, in the replenishment process, based on the water level of the DIW stored in the buffer tank 83, DIW with a temperature lower than that of the used SPM (room temperature DIW) is supplied to the buffer tank 83 (step S442). The replenishment process shown in Figure 13 is performed by the control unit 103 included in the substrate processing apparatus 100. In detail, as explained with reference to Figures 6 and 7, the control unit 103 controls the replenishment on / off valve 92 based on the signal output by the self-quantitative water level sensor 83a.

[0214] Figure 14 is a diagram showing the heating process included in the substrate processing method of this embodiment. The substrate processing method of this embodiment includes the heating process shown in Figure 14. The heating process can be performed in parallel with the supply process (step S44) in Figure 11, for example.

[0215] As shown in Figure 14, the heating process includes step S443. Specifically, in the heating process, the second heater 113 is controlled based on the temperature of the DIW (temperature-inducing liquid) supplied from the self-cooling unit 800 to the warm water unit 200 (step S443). The heating process shown in Figure 14 is performed by the control unit 103 included in the substrate processing apparatus 100. In detail, as explained with reference to Figures 6 and 8, the control unit 103 controls the output of the second heater 113 based on the detection result of the temperature sensor 115.

[0216] As explained above with reference to Figures 1 to 14, according to this embodiment, power consumption can be reduced. Therefore, environmental load can be reduced. For example, according to this embodiment, the second heater 113 heats the DIW (dissolved liquid to be heated) heated by the heat exchanger 82. Therefore, the load on the second heater 113 can be reduced. Therefore, the power consumption of the second heater 113 can be reduced.

[0217] [Second Implementation] Next, referring to Figures 15-17, a second embodiment of the present invention will be described. However, the description of matters that differ from the first embodiment will be omitted, while the description of matters that are the same as those in the first embodiment will be omitted. The second embodiment differs from the first embodiment in the point of controlling the flow rate of the DIW (temperature-increasing liquid) supplied from the cooling unit 800 to the warm water unit 200.

[0218] Figure 15 is a diagram showing the configuration of the warm water supply line 11A, the warm water unit 200, and the cooling unit 800 included in the substrate processing apparatus 100 of the second embodiment. As shown in Figure 15, the warm water replenishment line 11B included in the substrate processing apparatus 100 of the second embodiment further includes a flow control valve 116 and a flow sensor 117.

[0219] A flow control valve 116 is located upstream of the second heater 113 in the warm water supply pipe 111b (warm water supply line 11B) and controls the flow rate of the DIW (dissolved liquid to be heated) supplied to the warm water unit 200 via the warm water supply line 11A. In other words, the flow control valve 116 controls the flow rate of the DIW (dissolved liquid to be heated) supplied from the cooling unit 800 to the warm water unit 200. The flow control valve 116 is an example of a "flow control unit". The flow control valve 116 is, for example, a motor needle valve.

[0220] A flow sensor 117 is disposed downstream of the flow control valve 116 and upstream of the second heater 113 in the warm water makeup pipe 111b (warm water makeup line 11B). Specifically, the flow sensor 117 is disposed between the second heater 113 and the makeup filter 114. The flow sensor 117 detects the flow rate of DIW flowing in the warm water makeup pipe 111b (warm water makeup line 11B). Furthermore, the flow rate detected by the flow sensor 117 represents the amount of DIW flowing through the warm water makeup pipe 111b per unit time.

[0221] The control unit 103 controls the flow control valve 116 based on the temperature detected by the temperature sensor 115.

[0222] Figure 16 is a flowchart showing the flow control process performed by the control unit 103 included in the substrate processing apparatus 100 of the second embodiment. The flow control process shown in Figure 16 can be repeated, for example, for each predetermined cycle.

[0223] As shown in Figure 16, when the flow control process begins, the control unit 103 determines the temperature of the DIW supplied from the cooling unit 800 to the warm water unit 200 based on the signal received from the temperature sensor 115 (step S51), and controls the flow control valve 116 based on the determined temperature (step S52). Therefore, the flow control process shown in Figure 16 ends. In detail, the control unit 103 adjusts (changes) the target flow rate based on the determined temperature, and controls the flow control valve 116 in such a way that the flow rate of the DIW flowing in the warm water replenishment pipe 111b (warm water replenishment line 11B) becomes the target flow rate based on the flow rate detected by the flow sensor 117 and the target flow rate.

[0224] Specifically, when the temperature of the DIW is below the first temperature, the control unit 103 controls the flow control valve 116 to reduce the flow rate of the DIW flowing through the warm water supply pipe 111b (warm water supply line 11B). When the temperature of the DIW is above the second temperature, the control unit 103 controls the flow control valve 116 to increase the flow rate of the DIW flowing through the warm water supply pipe 111b (warm water supply line 11B). The second temperature refers to a temperature higher than the first temperature.

[0225] When the temperature of the DIW is below the first temperature, the difference between the DIW temperature and the processing temperature (target temperature) is large. Therefore, when the DIW flow rate is high, it may be impossible for the second heater 113 to raise the temperature of the DIW to the processing temperature (target temperature). To address this, according to this embodiment, when the DIW temperature is below the first temperature, the DIW flow rate is reduced. Therefore, the possibility of the DIW temperature not rising to the processing temperature (target temperature) can be reduced.

[0226] Furthermore, when the temperature of the DIW is above the second temperature, the difference between the DIW temperature and the processing temperature (target temperature) is small. Therefore, when the DIW flow rate is low, it is possible to raise the temperature of the DIW to above the processing temperature (target temperature) by the second heater 113. In response to this, according to this embodiment, when the DIW temperature is above the second temperature, the DIW flow rate is increased. Therefore, the possibility that the DIW temperature will reach above the processing temperature (target temperature) by the second heater 113 can be reduced.

[0227] Figure 17 is a diagram showing the heating process included in the substrate processing method of the second embodiment. The substrate processing method of the second embodiment is implemented by the substrate processing apparatus 100 described with reference to Figures 15 and 16. The substrate processing method of the second embodiment includes the heating process shown in Figure 17. The heating process can, for example, be performed in parallel with the supply process (step S44) in Figure 11.

[0228] As shown in Figure 17, the heating process includes step S444. Specifically, in the heating process, the flow control valve 116 is controlled based on the temperature of the DIW (temperature-controlled liquid) supplied from the self-cooling unit 800 to the warm water unit 200 (step S444). The heating process shown in Figure 17 is performed by the control unit 103 included in the substrate processing apparatus 100. In detail, as explained with reference to Figures 15 and 16, the control unit 103 controls the flow control valve 116 based on the detection result of the temperature sensor 115.

[0229] The second embodiment of the present invention has been described above with reference to Figures 15-17. According to the second embodiment, similar to the first embodiment, power consumption can be reduced. Therefore, environmental impact can be reduced.

[0230] [Third Implementation Form] Next, referring to Figures 18-19B, a third embodiment of the present invention will be described. However, matters that differ from the first and second embodiments will be described, while matters that are the same as those in the first and second embodiments will be omitted. The configuration of the cooling unit 800 and the warm water supply pipeline 11A in the third embodiment differs from those in the first and second embodiments.

[0231] Figure 18 is a diagram showing the configuration of the warm water supply line 11A, the warm water unit 200 and the cooling unit 800 included in the substrate processing apparatus 100 of the third embodiment.

[0232] As shown in Figure 18, in the third embodiment, the supplementary pipeline 9 supplies room temperature DIW to the upstream cooling pipeline 84a. Specifically, one end of the supplementary pipeline 91 is connected to the upstream cooling pipeline 84a.

[0233] Furthermore, in the third embodiment, the cooling circulation line 84 has a circulation on / off valve 86B instead of the circulation on / off valve 86A. The circulation on / off valve 86B is located on the upstream cooling line 84a. Specifically, the circulation on / off valve 86B is located upstream of the cooling circulation pump 85. More specifically, the circulation on / off valve 86B is located upstream of the connection point P4 between the supplementary line 91 and the upstream cooling line 84a.

[0234] Furthermore, in the third embodiment, the warm water supply pipeline 11A supplies DIW (heating target liquid) from the buffer tank 83 to the warm water unit 200. Specifically, one end of the warm water supply pipeline 111a is connected to the bottom wall of the buffer tank 83 and communicates with the inner space of the buffer tank 83.

[0235] Furthermore, in the third embodiment, the warm water supply line 11A further includes a liquid delivery pump 118. The liquid delivery pump 118 is installed in the warm water supply line 111a. The liquid delivery pump 118 delivers DIW (the liquid to be heated) from the buffer tank 83 to the warm water unit 200. Therefore, when the liquid delivery pump 118 is activated, the DIW stored in the buffer tank 83 is supplied to the warm water unit 200 (warm water replenishment line 11B) via the warm water supply line 111a (warm water supply line 11A). The liquid delivery pump 118 is controlled by the control unit 103.

[0236] Next, referring to Figures 18, 19A, and 19B, the cooling unit 800, the warm water supply line 11A, and the warm water unit 200 included in the substrate processing apparatus 100 of the third embodiment will be described. Figure 19A is a diagram showing the first state of the cooling unit 800, the warm water supply line 11A, and the warm water unit 200 included in the substrate processing apparatus 100 of the third embodiment. Figure 19B is a diagram showing the second state of the cooling unit 800, the warm water supply line 11A, and the warm water unit 200 included in the substrate processing apparatus 100 of the third embodiment. Furthermore, in Figures 19A and 19B, for the sake of simplification, a portion of the structure of the cooling unit 800 and the warm water unit 200 is omitted from the illustrations.

[0237] Similar to the first embodiment, when the control unit 103 determines that the water level of the DIW stored in the warm water tank 21 has changed from above the second water level to below the second water level, it controls the cooling circulation pipeline 84 and the warm water supply pipeline 11A to supply the DIW after passing through the heat exchanger 82 from the cooling unit 800 to the warm water unit 200.

[0238] In the third embodiment, the control unit 103 determines that the water level of the DIW (the liquid to be heated) stored in the warm water tank 21 has changed from above the second water level to below the second water level, and causes the circulation on / off valve 86B to change from the open state to the closed state, and drives the liquid delivery pump 118. Therefore, as shown in FIG19B, the DIW stored in the buffer tank 83 through the heat exchanger 82 is supplied to the warm water unit 200 via the warm water supply line 11A.

[0239] Therefore, in the third embodiment, in the supply process (step S44) shown in FIG11, DIW (the liquid to be heated) is supplied from the buffer tank 83 to the warm water unit 200. More specifically, DIW (the liquid to be heated) is supplied from the buffer tank 83 to the warm water unit 200 by means of the liquid delivery pump 118.

[0240] Furthermore, in the third embodiment, the control unit 103 determines that the water level of the DIW stored in the warm water tank 21 has changed from below the first water level to above the second water level, and changes the self-closed state of the circulation on / off valve 86B to the open state, and stops the liquid delivery pump 118. Therefore, as shown in FIG19A, the supply of DIW from the cooling unit 800 to the warm water unit 200 via the warm water supply pipeline 11A stops.

[0241] Furthermore, in the second state shown in Figure 19B, the DIW returning from the heat exchanger 82 to the buffer tank 83 is supplied to the warm water supply line 11A, instead of returning to the cooling upstream piping 84a (cooling circulation line 84). Therefore, the water level in the buffer tank 83 decreases. As explained with reference to Figure 6, the control unit 103, upon determining that the water level of the DIW stored in the buffer tank 83 has changed from above a predetermined level to below a predetermined level, changes the automatic closing state of the supplementary on / off valve 92 to the open state. Therefore, ambient temperature DIW is supplied from the supplementary line 9 to the cooling upstream piping 84a.

[0242] Furthermore, in the first state shown in Figure 19A, the DIW stored in the buffer tank 83 circulates in the cooling circulation line 84. Therefore, the water level in the buffer tank 83 does not decrease. The control unit 103 determines that the water level of the DIW stored in the buffer tank 83 has changed from below the specified water level to above the specified water level, and changes the replenishment valve 92 from the open state to the closed state, thereby stopping the supply of DIW from the replenishment line 9 to the cooling circulation line 84.

[0243] The third embodiment of the present invention has been described above with reference to Figures 18-19B. According to the third embodiment, similar to the first and second embodiments, power consumption can be reduced. Therefore, environmental impact can be reduced. Furthermore, according to the third embodiment, the DIW (dissolved liquid to be heated) is supplied from the cooling unit 800 to the warm water unit 200 via the liquid delivery pump 118. Therefore, for example, even in cases where the pressure loss of the heat exchanger 82 is large, the flow rate of the DIW supplied from the cooling unit 800 to the warm water unit 200 can be more stable. However, the liquid delivery pump 118 can be omitted.

[0244] The embodiments of the present invention have been described above with reference to Figures 1 to 19B. However, the present invention is not limited to the above embodiments and can be implemented in various forms without departing from its spirit. Furthermore, the plurality of constituent elements disclosed in the above embodiments can be appropriately modified. For example, one of the constituent elements shown in one embodiment can be added to the constituent elements of another embodiment, or several constituent elements shown in one embodiment can be removed from the embodiment.

[0245] To facilitate understanding of the invention, the drawings schematically show the various constituent elements on the main body. The thickness, length, number, and spacing of each constituent element in the drawings may sometimes differ from the actual components for ease of drawing creation. Furthermore, the composition of each constituent element shown in the above embodiments is an example and is not particularly limited. Needless to say, various modifications can be made within the scope of the effects of the invention without substantially departing from them.

[0246] For example, in the embodiments described with reference to Figures 1 to 19B, a drying process (step S6 in Figure 3) is performed after the second rinsing process (step S5 in Figure 3), but a displacement process can be performed between the second rinsing process and the drying process. The displacement process refers to the process of replacing the liquid film on the substrate W with the liquid film of the DIW and the liquid film of the IPA.

[0247] Furthermore, in the embodiments described with reference to Figures 1 to 19B, the substrate W is dried by rotating it at high speed during the drying process (step S6 in Figure 3), but the drying process is not limited to this process. For example, the substrate processing apparatus 100 may have a configuration that blows an inert gas toward the substrate W after the displacement process to dry the substrate W. Alternatively, the substrate processing apparatus 100 may have a configuration that sets the gas environment around the substrate W to an inert gas environment after the displacement process to dry the substrate W.

[0248] Furthermore, in the embodiments described with reference to Figures 1 to 19B, the substrate holding portion 3 has a clamping fixture mechanism, but the substrate holding portion 3 is not limited to a clamping fixture mechanism. For example, the substrate holding portion 3 may have a vacuum fixture mechanism.

[0249] Furthermore, in the embodiments described with reference to Figures 1 to 19B, SC1 is generated by the mixer 54. However, for example, ammonia, hydrogen peroxide, and DIW (warm water) can be supplied to the tank of the liquid tank provided in the substrate processing apparatus 100 to generate SC1 in the tank.

[0250] Furthermore, in the embodiments described with reference to Figures 1 to 19B, SPM is generated within the piping, but SPM can also be generated, for example, within a nozzle. Specifically, sulfuric acid and hydrogen peroxide water can be mixed within the nozzle. Alternatively, SPM can be generated on the substrate W. Specifically, sulfuric acid and hydrogen peroxide water can be supplied to the upper surface of the substrate W, and the sulfuric acid and hydrogen peroxide water can be mixed on the upper surface of the substrate W. In this case, the substrate processing unit 101 may have a nozzle for spraying sulfuric acid onto the substrate W and a nozzle for spraying hydrogen peroxide water onto the substrate W.

[0251] Furthermore, in the embodiments described with reference to Figures 1 to 19B, the nozzle that sprays the flushing fluid is a scanning nozzle, but the nozzle that sprays the flushing fluid may include a fixed nozzle and a nozzle disposed on the shielding plate. [Industrial Applicability]

[0252] The present invention provides an apparatus and method for processing substrates. [Related Applications]

[0253] This invention application claims priority based on Japanese Patent Application No. 2024-069009, filed on April 22, 2024, the entire contents of which are incorporated herein by reference.

[0254] 3: Substrate holding section 4: Substrate Rotation Section 5a: First Processing Fluid Supply Unit 5b: Second Processing Fluid Supply Unit 5c: Third Processing Fluid Supply Unit 6a: Nozzle 1 moving part 6b: Second nozzle moving part 6c: Third nozzle moving part 7: Wetted part 8: Cooling tank 8a: Storage Department 8b: Discharge section 9: Supplemental pipelines 11A: Warm water supply pipeline 11B: Warm water supply pipeline 21: Warm water bath 21a: Quantitative water level sensor 21b: Supplemental water level sensor 22: Warm water circulation pipeline 23: Common piping for warm water 23a: First warm water circulation piping 23b: Second warm water circulation piping 23c: Third warm water circulation piping 23d: 4th warm water circulation piping 24: Warm water circulating pump 25: First heater 26a: First warm water filter 26b: Second warm water filter 26c: Third warm water filter 26d: 4th warm water filter 31: Spin base 32: Fixture components 41: Drive Unit 42: Axis 51a: Nozzle 1 51b: Nozzle 2 51c: Nozzle 3 54: Mixer 61: Nozzle Arm 62: Nozzle base 63: Nozzle moving mechanism 71: The first wetted part 72: 2nd wetted part 73: Third liquid receiving section / Third protective cover section 75: Liquid-receiving moving part 75a: First Lifting Unit 75b: Second Lifting Unit 75c: Third Lifting Unit 81: Divider 82: Heat exchanger 83: Buffer slot 83a: Quantitative water level sensor 84: Cooling circulation pipeline 84a: Cooling upstream piping 84b: Cooling downstream piping 85: Cooling Circulation Pump 86A: Circulation On / Off Valve 86B: Circulation On / Off Valve 91: Supplemental piping 92: Supplementary on / off valve 100: Substrate processing apparatus 101: Substrate Processing Department 101a: Processing Room 102: Controller 103: Control Department 104: Memory Department 111a: Warm water supply piping 111b: Warm water supply piping 112: Warm water on / off valve 113: Second heater 114: Replenish filter 115: Temperature sensor 116: Flow control valve 117: Flow sensor 118: Liquid delivery pump 200: Warm water unit 301a~301d, 401a, 402a, 402b: Drainage piping 400A, 400B: Drainage tank 403: Drainage Pump 521: First treatment fluid piping 522: Second treatment fluid piping 523: Piping for the third treatment fluid 523a: First upstream side piping 523b: Second upstream side piping 523c: Third upstream side piping 524: Piping for the 4th treatment fluid 525: Fifth processing fluid piping 531: First treatment fluid on / off valve 532: Second processing fluid on / off valve 533: Third processing fluid on / off valve 533a: First upstream side on / off valve 533b: Second upstream side on / off valve 533c: Third upstream side on / off valve 534: Fourth processing fluid on / off valve 535: Fifth processing fluid on / off valve 711: First Protective Shield Section 712: First Cup Section 721: Second Protective Shield Section 722: Second Cup Section 800: Cooling Unit AX1: First axis of rotation AX2: Second axis of rotation CA: Wafer Box CR: Central Robot DIW: Deionized Water IR: Transport Robot LP: Wafer Loading and Unloading Machine P1~P4: Connection parts S1~S7, S11~S14, S21, S22, S31~S34, S41~S46, S51, S52, S441~S444: Steps TW: Tower TW1: Tower 1 TW2: Tower 2 TW3: Tower 3 TW4: Tower 4 W: substrate

Claims

1. A substrate processing apparatus comprising: a first liquid supply unit supplying a first processing liquid to a substrate; a second liquid supply unit supplying a second processing liquid, different from the first processing liquid, to the substrate; a temperature adjustment unit adjusting the temperature of a target liquid contained in the second processing liquid; a cooling unit cooling the first processing liquid, i.e., the cooling target liquid, supplied to the substrate; and a first supply line supplying the target liquid from the cooling unit to the temperature adjustment unit; wherein the cooling unit has: a first tank storing the target liquid; and a heat exchanger disposed in the first tank, cooling the target liquid stored in the first tank by allowing the target liquid, which has a lower temperature than the target liquid, to flow through it; the first supply line supplying the target liquid, which flows in the heat exchanger and is heated by the target liquid, to the temperature adjustment unit; The aforementioned temperature adjustment unit adjusts the temperature of the target liquid that is supplied to the aforementioned temperature adjustment unit via the aforementioned first supply line; the aforementioned second liquid supply unit supplies the aforementioned second processing liquid containing the aforementioned target liquid that has been temperature-adjusted by the aforementioned temperature adjustment unit to the aforementioned substrate.

2. The substrate processing apparatus of claim 1, wherein the aforementioned cooling unit further comprises: a second tank, wherein the temperature of the storage tank is lower than that of the aforementioned cooling target liquid than that of the aforementioned heating target liquid; and a circulation pipeline that circulates the aforementioned heating target liquid between the aforementioned heat exchanger and the aforementioned second tank.

3. The substrate processing apparatus of claim 2, wherein the first supply line branches off from the circulation line.

4. The substrate processing apparatus of claim 2, wherein the first supply line supplies the heated liquid from the second tank to the temperature adjustment unit.

5. The substrate processing apparatus of claim 4, wherein the first supply line includes a liquid delivery pump that delivers the heated liquid from the second tank to the temperature adjustment unit.

6. The substrate processing apparatus of any one of claims 2 to 5, wherein the aforementioned cooling unit further comprises a first water level sensor that detects whether the water level of the aforementioned heated target liquid stored in the aforementioned second tank is a predetermined water level; and the aforementioned substrate processing apparatus further comprises: a second supply line that supplies the aforementioned heated target liquid, which has a temperature lower than the aforementioned cooling target liquid, to the aforementioned second tank; and a controller; the aforementioned second supply line includes an on / off valve that controls the flow of the aforementioned heated target liquid through the aforementioned second supply line; and the aforementioned controller controls the aforementioned on / off valve based on the detection result of the aforementioned first water level sensor.

7. A substrate processing apparatus according to any one of claims 1 to 5, wherein the aforementioned temperature adjustment unit comprises: a heater that adjusts the temperature of the liquid to be heated supplied to the aforementioned temperature adjustment unit via the aforementioned first supply line; and a temperature sensor that detects the temperature of the liquid to be heated supplied to the aforementioned temperature adjustment unit via the aforementioned first supply line; and the aforementioned substrate processing apparatus further comprises a controller that controls the aforementioned heater based on the aforementioned temperature detected by the aforementioned temperature sensor.

8. A substrate processing apparatus according to any one of claims 1 to 5, wherein the aforementioned temperature adjustment unit comprises: a heater that adjusts the temperature of the liquid to be heated supplied to the aforementioned temperature adjustment unit via the aforementioned first supply line; a temperature sensor that detects the temperature of the liquid to be heated supplied to the aforementioned temperature adjustment unit via the aforementioned first supply line; and a flow control unit disposed upstream of the aforementioned heater that controls the flow rate of the liquid to be heated supplied to the aforementioned temperature adjustment unit via the aforementioned first supply line; and the aforementioned substrate processing apparatus further comprises a controller that controls the aforementioned flow control unit based on the temperature detected by the aforementioned temperature sensor.

9. A substrate processing apparatus according to any one of claims 1 to 5, wherein the aforementioned temperature adjustment unit comprises: a third tank storing the aforementioned heating target liquid supplied to the aforementioned temperature adjustment unit via the aforementioned first supply line; and a second water level sensor detecting whether the water level of the aforementioned heating target liquid stored in the aforementioned third tank is a predetermined water level; and the aforementioned substrate processing apparatus further comprises a controller that controls the supply of the aforementioned heating target liquid to the aforementioned temperature adjustment unit via the aforementioned first supply line based on the detection result of the aforementioned second water level sensor.

10. The substrate processing apparatus of any one of claims 1 to 5, wherein the aforementioned first processing solution contains sulfuric acid.

11. The substrate processing apparatus of any one of claims 1 to 5, wherein the aforementioned heated liquid contains water.

12. The substrate processing apparatus of claim 11, wherein the aforementioned second processing liquid includes a rinsing liquid; and the aforementioned rinsing liquid contains only the aforementioned heated target liquid.

13. The substrate processing apparatus of claim 11, further comprising a third liquid supply unit that supplies a third processing liquid, different from the first processing liquid and the second processing liquid, to the substrate; and the third processing liquid contains ammonia, hydrogen peroxide, and the aforementioned heating target liquid after the temperature is adjusted by the aforementioned temperature adjustment unit.

14. A substrate processing method, comprising: a step of supplying a first processing liquid to a substrate; a step of draining the first processing liquid, i.e., a cooling target liquid, supplied to the substrate into a first tank of a cooling unit; a cooling step of cooling the cooling target liquid by exchanging heat between the cooling target liquid stored in the first tank and a heating target liquid with a temperature lower than the cooling target liquid; a supply step of supplying the heating target liquid, which is heated by heat exchange with the cooling target liquid, from the cooling unit to a temperature adjustment unit; a step of adjusting the temperature of the heating target liquid by the temperature adjustment unit; and a step of supplying a second processing liquid, different from the first processing liquid, to the substrate; wherein the second processing liquid contains the heating target liquid whose temperature is adjusted by the temperature adjustment unit.

15. The substrate processing method of claim 14, wherein in the aforementioned cooling process, the aforementioned heated liquid is circulated between a second tank storing the aforementioned heated liquid and a heat exchanger that performs heat exchange between the aforementioned cooled liquid and the aforementioned heated liquid.

16. The substrate processing method of claim 15, wherein in the aforementioned supply process, the aforementioned heating target liquid is supplied to the aforementioned temperature adjustment unit from a circulation pipeline that circulates the aforementioned heating target liquid between the aforementioned second tank and the aforementioned heat exchanger.

17. The substrate processing method of claim 15, wherein in the aforementioned supply process, the aforementioned heating target liquid is supplied from the aforementioned second tank to the aforementioned temperature adjustment unit.

18. The substrate processing method of claim 17, wherein in the aforementioned supply process, the aforementioned heating target liquid is supplied from the aforementioned second tank to the aforementioned temperature adjustment unit by a liquid delivery pump.

19. The substrate processing method of any one of claims 15 to 18 further includes the following step: supplying the aforementioned heating target liquid with a temperature lower than that of the aforementioned cooling target liquid to the aforementioned second tank based on the water level of the aforementioned heating target liquid stored in the aforementioned second tank.

20. A substrate processing method according to any one of claims 14 to 18, wherein the aforementioned temperature adjustment unit has a heater that adjusts the temperature of the liquid to be heated supplied from the aforementioned cooling unit to the aforementioned temperature adjustment unit; and the aforementioned substrate processing method further includes the step of controlling the aforementioned heater based on the temperature of the liquid to be heated supplied from the aforementioned cooling unit to the aforementioned temperature adjustment unit.

21. A substrate processing method according to any one of claims 14 to 18, wherein the aforementioned temperature adjustment unit comprises: a heater that adjusts the temperature of the liquid to be heated supplied from the aforementioned cooling unit to the aforementioned temperature adjustment unit; and a flow control unit disposed upstream of the aforementioned heater that controls the flow rate of the liquid to be heated supplied from the aforementioned cooling unit to the aforementioned temperature adjustment unit; and the aforementioned substrate processing method further comprises the step of controlling the aforementioned flow control unit based on the temperature of the liquid to be heated supplied from the aforementioned cooling unit to the aforementioned temperature adjustment unit.

22. A substrate processing method according to any one of claims 14 to 18, wherein the aforementioned temperature adjustment unit has a third tank that stores the aforementioned heating target liquid supplied from the aforementioned cooling unit to the aforementioned temperature adjustment unit; and the aforementioned substrate processing method further includes the step of controlling the supply of the aforementioned heating target liquid from the aforementioned cooling unit to the aforementioned temperature adjustment unit based on the water level of the aforementioned heating target liquid stored in the aforementioned third tank.

23. The substrate processing method of any one of claims 14 to 18, wherein the aforementioned first processing solution contains sulfuric acid.

24. The substrate processing method of any one of claims 14 to 18, wherein the aforementioned heated liquid contains water.

25. The substrate processing method of claim 24, wherein the aforementioned second processing liquid includes a rinsing liquid; and the aforementioned rinsing liquid contains only the aforementioned heated target liquid.

26. The substrate processing method of claim 24 further includes the following steps: supplying a third processing liquid, which is different from the first processing liquid and the second processing liquid, to the substrate; and the third processing liquid contains: ammonia water, hydrogen peroxide water, and the aforementioned heating target liquid whose temperature is adjusted by the aforementioned temperature adjustment unit.

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