Biochip and manufacturing method thereof

Abstract

A biochip for detecting biological materials includes a substrate, a semiconductor layer, an insulating layer, a metal layer, a first protective layer, and a second protective layer. The semiconductor layer is disposed on the substrate and has a reaction region. The insulating layer is disposed on the semiconductor layer and has a first opening exposing the reaction region. The metal layer is disposed on the insulating layer and includes a source, a drain, and a wall structure. The source and drain are electrically connected to the semiconductor layer, respectively. The wall structure surrounds the first opening, the source, and the drain. The first protective layer is disposed on the metal layer and has a second opening. The second protective layer is disposed on the first protective layer and has a third and a fourth opening. The second protective layer includes a first protrusion, a second protrusion, and a third protrusion. The first protrusion corresponds to the source. The second protrusion corresponds to the drain. The third protrusion corresponds to the wall structure and surrounds and defines the fourth opening. In the normal direction of the substrate, the third opening overlaps the second and first openings. The fourth opening exposes the first protective layer.

Claims

1. A biochip for detecting biological materials, comprising: substrate; A semiconductor layer is disposed on the substrate and has a reaction region; An insulating layer is disposed on the semiconductor layer and has a first opening that exposes the reaction region; A metal layer disposed on the insulating layer includes: a source and a drain, electrically connected to the semiconductor layer, respectively; and a wall structure surrounding the first opening, the source, and the drain; a first protective layer disposed on the metal layer and having a second opening; and a second protective layer disposed on the first protective layer, having a third opening and a fourth opening, and including: a first protrusion corresponding to the source; a second protrusion corresponding to the drain; and a third protrusion corresponding to the wall structure, surrounding and defining the fourth opening; wherein, in the normal direction of the substrate, the third opening overlaps the second opening and the first opening, and the fourth opening exposes the first protective layer.

2. The biochip as claimed in claim 1, wherein the source, the drain, and the enclosure structure are on the same layer and separated from each other, and the source and the drain are electrically insulated from the enclosure structure.

3. The biochip as claimed in claim 1, wherein the first protective layer is a hydrophobic material.

4. The biochip as claimed in claim 1, wherein the second protective layer is a hydrophilic material.

5. The biochip as claimed in claim 1, wherein the first protrusion, the second protrusion, and the third protrusion are separated from each other.

6. The biochip as claimed in claim 1, wherein the third protrusion completely surrounds the fourth opening.

7. The biochip as claimed in claim 1, wherein the third opening is disposed between the first protrusion and the second protrusion, and the fourth opening is disposed between the second protrusion and the third protrusion.

8. The biochip as claimed in claim 1, wherein the size of the fourth opening is larger than the size of the third opening.

9. The biochip as described in claim 1, further comprising: The solution contacts the upper surface of the first protective layer exposed by the fourth opening and includes a biological probe.

10. A method for manufacturing a biochip, comprising: Provide substrate; A semiconductor layer is formed on the substrate, wherein the semiconductor layer has a reactive region; An insulating layer is formed on the semiconductor layer, wherein the insulating layer has a first opening that exposes the reaction region; A metal layer is formed on the insulating layer, wherein the metal layer includes: a source and a drain, electrically connected to the semiconductor layer, respectively; and a wall structure surrounding the first opening, the source, and the drain; a first protective layer is formed on the metal layer, wherein the first protective layer has a second opening; and a second protective layer is formed on the first protective layer, wherein the second protective layer has a third opening and a fourth opening, and includes: a first protrusion corresponding to the source; a second protrusion corresponding to the drain; and a third protrusion corresponding to the wall structure, surrounding and defining the fourth opening; wherein, in the normal direction of the substrate, the first opening overlaps the second opening and the third opening, and the fourth opening exposes the first protective layer.

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