Semiconductor devices

Abstract

A semiconductor device with excellent transistor characteristics is provided. The semiconductor device includes: a first oxide semiconductor layer and a second oxide semiconductor layer, extending along a first direction and arranged in a second direction, and comprising a first metal element and oxygen; a first conductive layer, extending along the second direction and facing a portion of the outer peripheral surfaces of the first oxide semiconductor layer and the second oxide semiconductor layer; and a first gate insulating layer and a second gate insulating layer, disposed between the first oxide semiconductor layer and the second oxide semiconductor layer and the first conductive layer. In a first cross-section extending along a third direction and including the first oxide semiconductor layer, the second oxide semiconductor layer, and the first conductive layer, the first conductive layer includes: an annular first portion disposed from the outer peripheral surface of the first oxide semiconductor layer with a distance of a first width and surrounding the first oxide semiconductor layer; and an annular second portion disposed from the outer peripheral surface of the second oxide semiconductor layer with a distance of a first width and surrounding the second oxide semiconductor layer. A portion of a circle, ellipse, or oblong circumscribed by the first portion and a portion of a circle, ellipse, or oblong circumscribed by the second portion overlap.

Claims

1. A semiconductor device, comprising: substrate; A first oxide semiconductor layer and a second oxide semiconductor layer extend along a first direction intersecting the surface of the substrate and are arranged in a second direction intersecting the first direction, and contain a first metal element and oxygen (O); a first conductive layer extends along the second direction and faces a portion of the outer peripheral surface of the first oxide semiconductor layer and a portion of the outer peripheral surface of the second oxide semiconductor layer; a first gate insulating layer is disposed between the first oxide semiconductor layer and the first conductive layer. And a second gate insulating layer, disposed between the second oxide semiconductor layer and the first conductive layer, in a first cross section extending along the second direction and a third direction intersecting the first direction and the second direction and including the first oxide semiconductor layer, the second oxide semiconductor layer and the first conductive layer, the first conductive layer includes: an annular first portion, disposed from the outer peripheral surface of the first oxide semiconductor layer away from a first width and surrounding the first oxide semiconductor layer; And a second annular portion, disposed away from the outer peripheral surface of the second oxide semiconductor layer at a distance from the first width and surrounding the second oxide semiconductor layer, overlapping a portion of a circle, ellipse or oblong circumscribed by the first portion and a portion of a circle, ellipse or oblong circumscribed by the second portion.

2. The semiconductor device as claimed in claim 1, comprising: A third oxide semiconductor layer extends along the first direction and is arranged in a direction that intersects the first direction and is different from the second direction relative to the first oxide semiconductor layer, and contains the first metal element and oxygen (O); a second conductive layer is arranged adjacent to the first conductive layer in the third direction and extends along the second direction, and faces a portion of the outer peripheral surface of the third oxide semiconductor layer; and a third gate insulating layer is disposed between the third oxide semiconductor layer and the second conductive layer. The first cross-section further includes the third oxide semiconductor layer and the second conductive layer. In the first cross-section, when the closest distance between the outer peripheral surface of the first oxide semiconductor layer and the outer peripheral surface of the second oxide semiconductor layer is defined as the second width, and the closest distance between the outer peripheral surface of the first oxide semiconductor layer and the outer peripheral surface of the third oxide semiconductor layer is defined as the third width, the third width is larger than the second width.

3. The semiconductor device as claimed in claim 1, comprising: A fourth oxide semiconductor layer, comprising the first metal element and oxygen (O), extends along the first direction and is aligned with the first oxide semiconductor layer in the second direction, and a portion of its outer peripheral surface faces the first conductive layer; a through electrode is disposed on one side of the first direction relative to the fourth oxide semiconductor layer and extends along the first direction; and a third conductive layer is disposed between the first conductive layer and the through electrode, and surrounds another portion of the outer peripheral surface of the fourth oxide semiconductor layer, wherein the first conductive layer and the through electrode are electrically connected via the third conductive layer.

4. The semiconductor device as claimed in claim 1, comprising: A first insulating layer extends along the first direction and is aligned with the first oxide semiconductor layer in the second direction, with a portion of its outer peripheral surface facing the first conductive layer; a through electrode is disposed on one side of the first direction relative to the first insulating layer and extends along the first direction; and a third conductive layer is disposed between the first conductive layer and the through electrode, and surrounds another portion of the outer peripheral surface of the first insulating layer, wherein the first conductive layer and the through electrode are electrically connected via the third conductive layer.

5. The semiconductor device of claim 1, comprising a fifth oxide semiconductor layer, the fifth oxide semiconductor layer comprising the first metal element and oxygen (O), extending along a first direction and aligned with the first oxide semiconductor layer in a second direction, and a portion of its outer peripheral surface facing the first conductive layer, wherein in a second cross-section extending along the second direction and the third direction and including the fifth oxide semiconductor layer and the first conductive layer, the first conductive layer includes an annular third portion disposed from the outer peripheral surface of the fifth oxide semiconductor layer away from the first width and surrounding the fifth oxide semiconductor layer, a portion of the third portion being an end of the first conductive layer in the second direction.

6. The semiconductor device of claim 1, comprising a second insulating layer extending along a first direction and aligned with a first oxide semiconductor layer in a second direction, and a portion of its outer peripheral surface facing the first conductive layer, wherein in a third cross-section extending along the second direction and the third direction and including the second insulating layer and the first conductive layer, the first conductive layer includes an annular fourth portion surrounding the outer peripheral surface of the second insulating layer, a portion of the fourth portion being an end portion of the first conductive layer in the second direction.

7. The semiconductor device of claim 1, comprising a third insulating layer disposed on one side of the first conductive layer in the first direction, the third insulating layer comprising the same material as the first gate insulating layer and the second gate insulating layer, and being continuous with the first gate insulating layer and the second gate insulating layer.

8. The semiconductor device as claimed in claim 2, comprising: A third insulating layer is disposed on one side of the first conductive layer in the first direction; A fourth insulating layer is disposed on one side of the second conductive layer in the first direction. The third insulating layer comprises the same material as the first gate insulating layer and is continuous with the first gate insulating layer. The fourth insulating layer comprises the same material as the third gate insulating layer and is continuous with the third gate insulating layer. Between the third insulating layer and the fourth insulating layer, a fifth insulating layer comprises the same material as the third insulating layer and the fourth insulating layer and is continuous with the third insulating layer and the fourth insulating layer.

9. The semiconductor device of claim 1, wherein the first metal element is selected from the group consisting of indium (In), gallium (Ga), aluminum (Al), zinc (Zn), tin (Sn), titanium (Ti), tungsten (W), and molybdenum (Mo).

10. The semiconductor device of claim 1, comprising a capacitor layer disposed on one side of the first oxide semiconductor layer and the second oxide semiconductor layer in the first direction, the capacitor layer comprising capacitor structures electrically connected to the first oxide semiconductor layer and the second oxide semiconductor layer, respectively.

11. A semiconductor device, comprising: substrate; A first oxide semiconductor layer and a second oxide semiconductor layer extend along a first direction intersecting the surface of the substrate and are arranged in a second direction intersecting the first direction, and contain a first metal element and oxygen (O); a first conductive layer extends along the second direction and faces a portion of the outer peripheral surface of the first oxide semiconductor layer and a portion of the outer peripheral surface of the second oxide semiconductor layer; a gate insulating layer is disposed between the first oxide semiconductor layer and the first conductive layer, and between the second oxide semiconductor layer and the first conductive layer; and a first electrode and a second electrode are respectively connected to one end of the first oxide semiconductor layer and the second oxide semiconductor layer in the first direction. When viewed from the first direction, a portion of the surface of the first conductive layer in a third direction intersecting the first and second directions is disposed consistent with the surface of the first electrode and the second electrode in the third direction, or is disposed away from the surface of the first electrode and the second electrode in the third direction by a first distance from the outside or inside.

12. The semiconductor device of claim 11, wherein the first electrode includes a fourth conductive layer, the fourth conductive layer being connected to one end of the first oxide semiconductor layer in the first direction and comprising a second metal element and oxygen (O), the second metal element being an element selected from the group consisting of indium (In), gallium (Ga), zinc (Zn), magnesium (Mg), aluminum (Al), manganese (Mn), tin (Sn), titanium (Ti), tantalum (Ta), calcium (Ca), tungsten (W), and molybdenum (Mo).

13. The semiconductor device as claimed in claim 11, comprising: A third oxide semiconductor layer, extending along the first direction and arranged in a direction intersecting the first direction and different from the second direction relative to the first oxide semiconductor layer, and containing the first metal element and oxygen (O); a third electrode, connected to one end of the third oxide semiconductor layer in the first direction; and a second conductive layer, arranged adjacent to the first conductive layer in the third direction and extending along the second direction, and facing a portion of the outer peripheral surface of the third oxide semiconductor layer, wherein in a cross-section extending along the second direction and the third direction and including the first electrode, the second electrode, and the third electrode, when the closest distance between the outer peripheral surface of the first electrode and the outer peripheral surface of the second electrode is defined as a second distance, and the closest distance between the outer peripheral surface of the first electrode and the outer peripheral surface of the third electrode is defined as a third distance, the third distance is larger than the second distance.

14. The semiconductor device of claim 11, wherein the first metal element is selected from the group consisting of indium (In), gallium (Ga), aluminum (Al), zinc (Zn), tin (Sn), titanium (Ti), tungsten (W), and molybdenum (Mo).

15. The semiconductor device of claim 11, comprising a capacitor layer disposed on one side of the first oxide semiconductor layer and the second oxide semiconductor layer in the first direction, the capacitor layer comprising capacitor structures electrically connected to the first oxide semiconductor layer and the second oxide semiconductor layer, respectively.

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