Method and computer program product and apparatus for read retry

Abstract

This invention relates to a read retry method, computer program product, and apparatus. The method includes: issuing a first set reread voltage command to a flash memory module to notify the flash memory module to switch to a specific plane; and issuing one or more second set reread voltage commands to the flash memory module, wherein each second set reread voltage command carries an offset value of a specified read voltage for a specified character line type in a specified physical block type of the specific plane.

Claims

1. A read retry method, executed by a processing unit in a flash memory controller, wherein the flash memory controller is coupled to a flash memory module via a flash memory interface therein, the method comprising: issuing a first set reread voltage command to the flash memory module to notify the flash memory module to switch to a specific plane; and issuing one or more second set reread voltage commands to the flash memory module, wherein, Each of the second set reread voltage commands carries an offset value for a specified read voltage of a specified character line type in a specified entity block type of the specific plane.

2. The read retry method as described in request item 1, wherein, The first set reread voltage command is a first set characteristic command, and the operation code of the first set characteristic command is "EFh". Each second set reread voltage command is a second set characteristic command, and the operation code of the second set characteristic command is "EFh".

3. The read retry method as described in request item 2, wherein, The characteristic address of the first setting characteristic command is a specified reserved value, and the sub-characteristic parameter setting of the first setting characteristic command carries the number of the specific plane, so as to instruct the flash memory module to switch to the specific plane.

4. The read retry method as described in request item 3, wherein, Each of the second setting characteristic commands carries a characteristic address representing the value of the specified read voltage representing the specified character line type in the specified entity block type, and the sub-characteristic parameter setting of the second setting characteristic command carries the offset value of the specified read voltage of the specified character line type in the specified entity block type of the specified plane.

5. The read retry method as described in claim 1 further comprises: during the period of entering the debugging mode or unexpected error management, issuing a first acquire reread voltage command to the flash memory module to notify the flash memory module to switch to the specific plane; and during the period of entering the debugging mode or the unexpected error management, issuing one or more second acquire reread voltage commands to the flash memory module, wherein, Each of the second get reread voltage commands is used to obtain from the flash memory module the offset value of the specified read voltage of the specified character line type in the specified entity block type of the specified plane.

6. The read retry method as described in request item 5, wherein, The first acquire reread voltage command is a first acquire characteristic command, and the opcode of the first acquire characteristic command is "EEh". Each second acquire reread voltage command is a second acquire characteristic command, and the opcode of the second acquire characteristic command is "EEh".

7. The read retry method as described in request item 6, wherein, The feature address of the first feature acquisition command is a specified reserved value, the sub-feature parameter setting of the first feature acquisition command carries the number of the specific plane to instruct the flash memory module to switch to the specific plane, and each feature address of the second feature acquisition command carries the value of the specified read voltage representing the specified character line type in the specified entity block type.

8. A computer program product comprising program code, wherein, When the processing unit in the flash memory controller executes the code, the read retry method as described in any one of requests 1 to 7 is implemented.

9. A read retry device, comprising: a flash memory interface coupled to a flash memory module; and a processing unit coupled to the flash memory interface, configured to: issue a first preset reread voltage command to the flash memory module, for notifying the flash memory module to switch to a specific plane; and issue one or more second preset reread voltage commands to the flash memory module, wherein... Each of the second set reread voltage commands carries an offset value for a specified read voltage of a specified character line type in a specified entity block type of the specific plane.

10. The read retry device as described in claim 9, wherein, The first set reread voltage command is a first set characteristic command, and the operation code of the first set characteristic command is "EFh". Each second set reread voltage command is a second set characteristic command, and the operation code of the second set characteristic command is "EFh".

11. The read retry device as described in claim 10, wherein, The characteristic address of the first setting characteristic command is a specified reserved value, and the sub-characteristic parameter setting of the first setting characteristic command carries the number of the specific plane, so as to instruct the flash memory module to switch to the specific plane.

12. The read retry device as described in claim 11, wherein, Each of the second setting characteristic commands carries a characteristic address representing the value of the specified read voltage representing the specified character line type in the specified entity block type, and the sub-characteristic parameter setting of the second setting characteristic command carries the offset value of the specified read voltage of the specified character line type in the specified entity block type of the specified plane.

13. The read retry device as described in claim 9, wherein, The processing unit is configured to: during the period of entering debugging mode or unexpected error management, issue a first acquire reread voltage command to the flash memory module to notify the flash memory module to switch to the specific plane; and during the period of entering the debugging mode or unexpected error management, issue one or more second acquire reread voltage commands to the flash memory module, wherein each second acquire reread voltage command is used to acquire from the flash memory module the offset value of the specified read voltage of the specified character line type in the specified entity block type of the specific plane.

14. The read retry device as described in claim 13, wherein, The first acquire reread voltage command is a first acquire characteristic command, and the opcode of the first acquire characteristic command is "EEh". Each second acquire reread voltage command is a second acquire characteristic command, and the opcode of the second acquire characteristic command is "EEh".

15. The read retry device as described in claim 14, wherein, The feature address of the first feature acquisition command is a specified reserved value, the sub-feature parameter setting of the first feature acquisition command carries the number of the specific plane to instruct the flash memory module to switch to the specific plane, and each feature address of the second feature acquisition command carries the value of the specified read voltage representing the specified character line type in the specified entity block type.

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