Substrate processing apparatus and substrate processing method

Abstract

The present invention provides a substrate processing apparatus and a substrate processing method for suppressing the temperature drop of the processing liquid supplied to the lower surface of a substrate. The substrate processing apparatus (1) includes: a rotating holding unit (10); a lower surface ejection nozzle (32); a lower surface supply pipe (33); a heating unit (35); a flow rate adjustment unit (38); and a control device (40). The control device (40) includes: a temperature control unit (41) that controls the flow rate adjustment unit (38) to eject the processing liquid (L) to a height that does not reach the lower surface (b) of the substrate (W) while the rotating holding unit (10) holds the substrate (W), and heats the lower surface supply pipe (33); and a processing control unit (42) that controls the flow rate adjustment unit (38) to eject the processing liquid (L) to a height that reaches the lower surface (b) of the substrate (W) after the lower surface supply pipe (33) is heated, and processes the substrate (W).

Description

[Technical Field]

[0001] This invention relates to a substrate processing apparatus and a substrate processing method. [Previous Technology]

[0002] Regarding substrate processing apparatuses that process substrates such as semiconductor wafers using processing solutions such as chemical solutions or cleaning solutions, from the viewpoint of uniformity or reproducibility of processing each substrate, monolithic apparatuses that process substrates one by one are widely adopted. Monolithic substrate processing apparatuses rotate the substrate by rotating a rotating body that holds the substrate, while simultaneously spraying processing solution toward the center of the upper surface of the substrate. Centrifugal force is then used to distribute the processing solution throughout the entire upper surface of the substrate, thereby processing the upper surface.

[0003] Generally speaking, the higher the temperature of the processing solution, the higher the processing rate. Therefore, the processing solution is heated to a preset temperature. Then, the substrate processing apparatus sprays the processing solution heated to the preset temperature toward the upper surface of the substrate. [Prior Art Documents] [Patent Documents]

[0004] [Patent Document 1] Japanese Patent Application Publication No. 2012-004294 [Summary of the Invention]

[0005] [Problem to be Solved by the Invention] A substrate processing apparatus sometimes sprays a processing liquid toward the lower surface of a substrate to process the lower surface of the substrate. The heated processing liquid flows in a supply pipe connected to a spray nozzle and is sprayed from the spray nozzle toward the lower surface of the substrate. However, there is a concern that the temperature of the heated processing liquid decreases during its flow in the supply pipe.

[0006] The embodiments of the present invention were proposed to solve the aforementioned problems, and their object is to provide a substrate processing apparatus and a substrate processing method for suppressing the temperature drop of the processing liquid supplied to the lower surface of the substrate. [Means for Solving the Problems]

[0007] The substrate processing apparatus according to an embodiment of the present invention includes: a rotation holding unit for holding and rotating a substrate; a lower surface ejection nozzle for ejecting a processing liquid toward the lower surface of the substrate; a lower surface supply pipe connected to the lower surface ejection nozzle; a heating unit for heating the processing liquid supplied to the lower surface supply pipe; a flow rate adjustment unit for adjusting the flow rate of the processing liquid ejected from the lower surface ejection nozzle; and a control device for controlling the flow rate adjustment unit, the control device including: a temperature control unit for controlling the flow rate adjustment unit while the substrate is held by the rotation holding unit, so as to eject the processing liquid to a height that does not reach the lower surface of the substrate and heat the lower surface supply pipe; and a processing control unit for controlling the flow rate adjustment unit after heating the lower surface supply pipe, so as to eject the processing liquid to a height that reaches the lower surface of the substrate and process the substrate.

[0008] Furthermore, the substrate processing apparatus according to an embodiment of the present invention includes: a rotation holding section for holding and rotating a substrate; a nozzle head having a recess facing the lower surface of the substrate held by the rotation holding section and a drain hole opening in the recess; a lower surface ejection nozzle disposed on the nozzle head and ejecting a processing liquid toward the lower surface of the substrate; a lower surface supply pipe connected to the lower surface ejection nozzle; a heating section for heating the processing liquid supplied to the lower surface supply pipe; and a flow rate adjustment section for adjusting the flow rate of the processing liquid ejected from the lower surface ejection nozzle. The flow rate of the liquid is adjusted; and a control device controls the flow rate adjustment unit, the control device including: a heating control unit that controls the flow rate adjustment unit to cause the processing liquid ejected from the lower surface ejection nozzle to adhere to the recess and to heat the lower surface supply pipe; and a processing control unit that, after heating the lower surface supply pipe, controls the flow rate adjustment unit while the substrate is held by the rotating holding unit, so that the lower surface ejection nozzle ejects the processing liquid to a height reaching the lower surface of the substrate, and processes the substrate.

[0009] The substrate processing method according to an embodiment of the present invention includes: a holding step, holding the substrate; a rotation step, rotating the substrate; a heating step, after the holding step, adjusting the flow rate of the processing liquid ejected from the lower surface ejection nozzle to eject the heated processing liquid from the lower surface ejection nozzle connected to the lower surface supply pipe to a height that does not reach the lower surface of the substrate, and heating the lower surface supply pipe; and a processing step, after the heating step, adjusting the flow rate of the processing liquid ejected from the lower surface ejection nozzle to eject the processing liquid from the lower surface ejection nozzle to a height that reaches the lower surface of the substrate, and processing the substrate.

[0010] Furthermore, the substrate processing method according to an embodiment of the present invention includes: a heating step, in which heated processing liquid is ejected from a lower surface ejection nozzle connected to a lower surface supply pipe, and the lower surface supply pipe is heated; a holding step, in which the substrate is held; a rotation step, in which the substrate is rotated; and a processing step, in which the flow rate of the processing liquid ejected from the lower surface ejection nozzle is adjusted to eject the processing liquid from the lower surface ejection nozzle to a height reaching the lower surface of the substrate, and the substrate is processed. In the heating step, the flow rate of the processing liquid ejected from the lower surface ejection nozzle is adjusted so that the processing liquid ejected from the lower surface ejection nozzle adheres to a recess in the drain hole opening facing the lower surface of the substrate. [Effects of the Invention]

[0011] By means of embodiments of the present invention, the temperature drop of the processing liquid supplied to the lower surface of the substrate can be suppressed.

Implementation Method

[0013] [First Embodiment] Hereinafter, a first embodiment of the present invention will be described with reference to the accompanying drawings. However, the present invention is not limited to the embodiments described below.

[0014] [Summary] As shown in FIG1, the substrate processing apparatus 1 is an apparatus that holds and rotates a substrate W using a rotating holding unit 10, while simultaneously spraying a processing liquid L onto the substrate W. The substrate processing apparatus 1 sprays the processing liquid L onto the upper surface t and the lower surface b of the substrate W, and processes both the upper surface t and the lower surface b of the substrate W. The processing liquid L sprayed onto the upper surface t and the lower surface b of the substrate W is an etching solution, for example, an aqueous solution containing phosphoric acid.

[0015] Before processing the lower surface b of the substrate W, the substrate processing apparatus 1 sprays the processing liquid L from the lower surface ejection nozzle 32 to a height that does not reach the lower surface b of the substrate W, and heats the lower surface supply pipe 33 connected to the lower surface ejection nozzle 32. After heating the lower surface supply pipe 33, the processing liquid L is sprayed to a height that reaches the lower surface b of the substrate W, and the lower surface b of the substrate W is processed.

[0016] As shown in FIG1, the substrate processing apparatus 1 includes a rotation holding part 10, an upper surface treatment liquid supply part 20, a lower surface treatment liquid supply part 30, and a control device 40.

[0017] [Rotation Holding Part] The rotation holding part 10 holds and rotates the substrate W. The rotation holding part 10 has a rotating body 11, a holding member 12, and a drive mechanism 13. The rotating body 11 is a cylindrical member, such as a rotary table. One end of the rotating body 11 is blocked by an opposing surface 11a. The opposing surface 11a is a circular surface with a diameter larger than that of the substrate W, and faces the substrate W, which is the object to be processed, at a distance. A through hole as a space is formed in the central part of the rotating body 11. A holding cylinder 131 is inserted into the through hole of the rotating body 11. The holding cylinder 131 is a hollow annular member, and a flow path is formed along the rotation axis of the rotating body 11. The flow path constitutes a drain path 313. The holding cylinder 131 is supported on a stand (not shown). Therefore, the holding cylinder 131 rotates without being linked to the rotating body 11.

[0018] The holding member 12 is a holding member that holds the substrate W at intervals from the opposing surface 11a of the rotating body 11. The holding member 12 is configured to protrude from the opposing surface 11a of the rotating body 11. A plurality of holding members 12 are provided at equal intervals along positions corresponding to the outer periphery of the substrate W. In addition, the holding member 12 is configured to move between a closed position where it is in contact with the outer periphery of the substrate W and holds the substrate W, and an open position where it is away from the outer periphery of the substrate W and releases the substrate W, by means of an opening and closing mechanism (not shown).

[0019] The drive mechanism 13 is a drive source (motor) that rotates the rotating body 11. By rotating the rotating body 11, the drive mechanism 13 causes the substrate W held by the holding member 12 to rotate about an axis that passes through the center of the substrate W and extends in a direction orthogonal to the upper surface t (lower surface b). The drive source is a hollow motor, and the holding cylinder 131 is inserted into its interior in a non-contact manner. Therefore, the holding cylinder 131 does not rotate.

[0020] [Upper Surface Treatment Liquid Supply Unit] The upper surface treatment liquid supply unit 20 supplies treatment liquid L to the upper surface t of the substrate W. The upper surface treatment liquid supply unit 20 has an upper surface spray nozzle 21, an arm 22, and a moving mechanism 23.

[0021] The upper surface ejection nozzle 21 is positioned above the center of the upper surface t of the substrate W in the supply position described later. The upper surface ejection nozzle 21 ejects the processing liquid L towards the center of the upper surface t of the substrate W. The upper surface ejection nozzle 21 is connected to an upper surface supply pipe (not shown). The upper surface supply pipe is connected to a processing liquid supply source (not shown), and the upper surface ejection nozzle 21 ejects the processing liquid L supplied from the processing liquid supply source via the upper surface supply pipe. Furthermore, the processing liquid L is ejected, for example, after being heated to a predetermined temperature such as 160°C.

[0022] Arm 22 holds the upper surface ejection nozzle 21 at its front end. The moving mechanism 23 moves the upper surface ejection nozzle 21 in a direction parallel to the upper surface t of the substrate W by moving arm 22 in a direction parallel to the upper surface t of the substrate W. The moving mechanism 23 moves the upper surface ejection nozzle 21 between a supply position near the center of the substrate W and a retraction position away from the upper surface of the substrate W by moving arm 22.

[0023] Furthermore, the upper surface treatment liquid supply unit 20 has a cleaning liquid ejection nozzle (not shown) for ejecting cleaning liquid toward the upper surface t of the substrate W. The cleaning liquid ejection nozzle is connected to a cleaning liquid supply source (not shown) via a cleaning liquid supply pipe (not shown). Carbonated water or pure water can be used as the cleaning liquid.

[0024] [Lower Surface Treatment Liquid Supply Unit] The lower surface treatment liquid supply unit 30 supplies treatment liquid L to the lower surface b of the substrate W. The lower surface treatment liquid supply unit 30 includes a nozzle head 31, a lower surface ejection nozzle 32, a lower surface supply pipe 33, a treatment liquid supply source 34, a heating unit 35, a piping 36, a pump 36a, three on / off valves 37a, 37b, and 37c, a flow rate adjustment unit 38, and a cleaning liquid ejection nozzle 39.

[0025] The nozzle head 31 is disposed inside the rotating body 11 and mounted on the upper part of the retaining cylinder 131. Therefore, even if the rotating body 11 rotates, the nozzle head 31 does not rotate. The nozzle head 31 has a recess 311 and a drain hole 312.

[0026] The recess 311 is configured to face the lower surface b of the substrate W held by the rotation holding portion 10. The recess 311 is a depression that is recessed below the upper surface of the nozzle head 31. The recess 311 is an inverted conical shape with an open upper surface. That is, the recess 311 has an inclined surface that gradually narrows from top to bottom. The central axis of the recess 311 is configured to be coaxial with the rotation axis of the substrate W. The recess 311 receives the processing liquid L that is ejected and falls from the nozzle 32 ejected from the lower surface. A drain hole 312 is formed at the lowermost end of the inclined surface of the recess 311. That is, the drain hole 312 opens inside the recess 311 and communicates with the recess 311. In addition, the drain hole 312 is connected to the upper end of the drain path 313 of the holding cylinder 131. Thus, the processing liquid L received by the recess 311 is discharged through the drain hole 312 and the drain path 313.

[0027] The lower surface ejection nozzle 32 ejects the processing liquid L toward the vicinity of the center of the lower surface b of the substrate W. The lower surface ejection nozzle 32 is positioned below the lower surface b of the substrate W held by the rotation holding portion 10. The lower surface ejection nozzle 32 is positioned offset from the center of the substrate W when viewed from above. Therefore, the lower surface ejection nozzle 32 is inclined relative to the rotation axis of the rotating body 11 so that the processing liquid L can be ejected toward the vicinity of the center of the lower surface b of the substrate W. The lower surface ejection nozzle 32 is provided in the recess 311 of the nozzle head 31.

[0028] The lower surface supply pipe 33 is a flow path for the processing liquid L and is a piping for supplying the processing liquid L to the lower surface ejection nozzle 32. One end of the lower surface supply pipe 33 is connected to the lower part of the lower surface ejection nozzle 32. The lower surface supply pipe 33 is configured to penetrate the thick-walled portion of the retaining cylinder 131 and extend to the outside of the rotating body 11. The other end of the lower surface supply pipe 33 is connected to the on / off valve 37a. By opening the on / off valve 37a, the processing liquid L is supplied to the lower surface supply pipe 33. Then, the processing liquid L is supplied from the lower surface supply pipe 33 to the lower surface ejection nozzle 32 and ejected from the lower surface ejection nozzle 32.

[0029] The processing fluid supply source 34 is a tank or the like for storing processing fluid L. A pipe 36 is connected to the processing fluid supply source 34. The processing fluid supply source 34 has an outlet 341 for the processing fluid L to flow out to the pipe 36, and an inlet 342 for the processing fluid L to flow in from the pipe 36. The processing fluid supply source 34 supplies the processing fluid L to the pipe 36 via the outlet 341. In addition, the processing fluid supply source 34 receives the inflow of processing fluid L from the pipe 36 via the inlet 342.

[0030] The heating unit 35 heats the processing liquid L supplied from the processing liquid supply source 34 to a predetermined temperature, which is a preset temperature. The predetermined temperature is the same as the temperature supplied to the upper surface t of the substrate W, for example, 160°C.

[0031] Pipe 36 is a flow path for supplying the processing liquid L. Pipe 36 is used to circulate the processing liquid L stored in the processing liquid supply source 34 and to supply the processing liquid L heated by the heating unit 35 to the lower surface supply pipe 33. Pipe 36 includes a delivery pipe 361, a circulation pipe 362, a branch pipe 363, and a flow adjustment pipe 364.

[0032] The outgoing pipe 361 is a pipe through which the processing liquid L flows from the processing liquid supply source 34. One end of the outgoing pipe 361 is connected to the outlet 341 of the processing liquid supply source 34. The other end of the outgoing pipe 361 branches off and is connected to a circulation pipe 362 and a branch pipe 363. In addition, the outgoing pipe 361 is also connected to a flow adjustment pipe 364. Furthermore, a pump 36a and a heating unit 35 are provided in the middle of the outgoing pipe 361. In the outgoing pipe 361, the heating unit 35 is arranged downstream of the pump 36a. The pump 36a delivers the processing liquid L stored in the processing liquid supply source 34 to the outgoing pipe 361. Driven by the pump 36a, the processing liquid L flowing in the outgoing pipe 361 is heated to a predetermined temperature by the heating unit 35.

[0033] The circulation pipe 362 is used to return the processed liquid L supplied from the processed liquid supply source 34 to the processed liquid supply source 34. One end of the circulation pipe 362 is connected to the delivery pipe 361. The other end of the circulation pipe 362 is connected to the inlet 342 of the processed liquid supply source 34. Thus, the processed liquid L supplied from the processed liquid supply source 34 flows in the delivery pipe 361 and the circulation pipe 362, achieving circulation. An on / off valve 37b is provided in the middle of the circulation pipe 362. When the processed liquid L is not sprayed from the nozzle 32 on the lower surface, the on / off valve 37b is set to the open state, and the processed liquid L is circulated through the circulation pipe 362. Even when the processed liquid L is not sprayed from the nozzle 32 on the lower surface, the processed liquid L is maintained at a specified temperature by circulating while being heated by the heating unit 35. On the other hand, when the treatment liquid L is sprayed from the nozzle 32 on the lower surface, the on / off valve 37b is set to the closed state.

[0034] The branch pipe 363 is a piping that supplies the processing fluid L to the lower surface supply pipe 33. One end of the branch pipe 363 is connected to the delivery pipe 361. The other end of the branch pipe 363 is connected to the on / off valve 37a. Thus, the processing fluid L supplied from the processing fluid supply source 34 is configured to flow in the delivery pipe 361 and the branch pipe 363, and can be supplied to the lower surface supply pipe 33 via the on / off valve 37a. By opening and closing the on / off valve 37a, the supply and stop of the processing fluid L from the branch pipe 363 to the lower surface supply pipe 33 are controlled.

[0035] The flow regulating pipe 364 is used to regulate the flow rate of the treatment liquid L supplied from the branch pipe 363 to the lower surface supply pipe 33. One end of the flow regulating pipe 364 is connected to the delivery pipe 361 downstream of the heating unit 35. The other end of the flow regulating pipe 364 is connected to the circulation pipe 362 downstream of the on / off valve 37b. The flow regulating pipe 364 is a flow path for the treatment liquid L to flow when it is ejected from the lower surface ejection nozzle 32. The flow regulating pipe 364 is provided with an on / off valve 37c and a flow regulating part 38. The flow regulating part 38 is provided downstream of the on / off valve 37c in the flow regulating pipe 364. The on / off valve 37c is in an open state when the treatment liquid L is ejected from the lower surface ejection nozzle 32, and in a closed state when it is not ejected.

[0036] The flow adjustment unit 38 is, for example, a needle valve, which adjusts the flow rate of the treatment fluid L ejected from the lower surface ejection nozzle 32. Specifically, by setting the on / off valves 37a and 37c to the open state, the flow rate of the treatment fluid L flowing in the flow adjustment pipe 364 is adjusted, thereby adjusting the flow rate of the treatment fluid L flowing in the branch pipe 363 and the lower surface supply pipe 33 and ejected from the lower surface ejection nozzle 32. The ejection height of the treatment fluid L can be determined based on the flow rate of the treatment fluid L ejected from the lower surface ejection nozzle 32. The ejection height of the treatment fluid L refers to the highest point in the trajectory of the treatment fluid L ejected from the lower surface ejection nozzle 32 in an upward direction (obliquely upward in this embodiment).

[0037] Furthermore, in this embodiment, the on / off valve 37a is provided on the outside of the rotating body 11. Therefore, the heating unit 35 for heating the processing liquid L and the piping 36 for supplying the heated processing liquid L to the lower surface supply pipe 33 are also provided on the outside of the rotating body 11. That is, the processing liquid L heated by the heating unit 35 is ejected from the lower surface ejection nozzle 32 through the lower surface supply pipe 33, which has a length at least equal to or greater than the length in the direction of the rotation axis of the rotating body 11.

[0038] The cleaning fluid ejection nozzle 39 ejects cleaning fluid toward the lower surface b of the substrate W. The cleaning fluid ejection nozzle 39 is connected to a cleaning fluid supply source (not shown) via a cleaning fluid supply pipe (not shown). Carbonated water or pure water can be used as the cleaning fluid. The cleaning fluid ejection nozzle 39 is positioned offset from the center of the substrate W when viewed from above. Therefore, the cleaning fluid ejection nozzle 39 is inclined relative to the rotation axis of the rotating body 11 so that the cleaning fluid can be ejected near the center of the lower surface b of the substrate W. The cleaning fluid ejection nozzle 39 is provided in the recess 311 of the nozzle head 31. In addition, as shown in FIG3, the cleaning fluid ejection nozzle 39 is provided in the recess 311 at a position that does not face the lower surface ejection nozzle 32. That is, the cleaning fluid ejection nozzle 39 is provided at a position offset from the center of the recess 311 (drain hole 312) on a straight line passing through the lower surface ejection nozzle 32 when viewed from above.

[0039] (Control Device) The control device 40 controls each part of the substrate processing apparatus 1. In order to realize the various functions of the substrate processing apparatus 1, the control device 40 has a processor for executing programs, a memory for storing various information such as programs or operating conditions, and drive circuits for driving each component. That is, the control device 40 controls the rotation holding part 10, the upper surface treatment liquid supply part 20, the lower surface treatment liquid supply part 30, etc.

[0040] The control device 40 controls the on / off valves 37a, 37b, and 37c of the lower surface treatment liquid supply unit 30 and the flow adjustment unit 38, and controls the spraying / stopping of the treatment liquid L from the lower surface spray nozzle 32 and the spraying height of the treatment liquid L. When the treatment liquid L is not sprayed from the lower surface spray nozzle 32, the control device 40 controls the on / off valves 37a and 37c to be closed and the on / off valve 37b to be open. If this is the case, as shown in FIG4, the treatment liquid L is circulated through the delivery pipe 361 and the circulation pipe 362. Therefore, the treatment liquid L circulating in the pipes 36 (delivery pipe 361 and circulation pipe 362) is heated by the heating unit 35, thereby maintaining it at a specified temperature.

[0041] On the other hand, when the treatment fluid L is ejected from the lower surface ejection nozzle 32, the control device 40 controls the on / off valve 37b to be closed and controls the on / off valves 37a and 37c to be open. In this way, by controlling the on / off valves 37a, 37b, and 37c, the treatment fluid L flows from the distribution pipe 363 to the lower surface supply pipe 33 and is ejected from the lower surface ejection nozzle 32.

[0042] The control device 40 includes a temperature control unit 41 and a processing control unit 42. The temperature control unit 41 performs temperature control, and the processing control unit 42 performs processing control. The common feature of the temperature control and the processing control is that they control the processing liquid L to be sprayed out of the nozzle 32 from the lower surface, but the spraying height of the processing liquid L is different.

[0043] Temperature control is used to heat the lower surface supply pipe 33 to the same temperature as the processing liquid L sprayed during processing control. As shown in FIG5, temperature control sprays the processing liquid L to a height where the processing liquid L does not reach the lower surface b of the substrate W. Therefore, the temperature control unit 41 controls the flow rate adjustment unit 38 so that the spray height of the processing liquid L does not reach the lower surface b of the substrate W. In the state of temperature control, since the processing liquid L does not reach the lower surface b of the substrate W, processing of the lower surface b of the substrate W is not started. In addition, the temperature control unit 41 preferably controls the flow rate by means of the flow rate adjustment unit 38 during temperature control so that the processing liquid L sprayed from the lower surface spray nozzle 32 adheres to the recess 311 of the nozzle head 31. By controlling it in this way, the processing liquid L can be prevented from scattering toward the rotating body 11, etc.

[0044] As shown in FIG2, the processing control is used to control the processing liquid L to be sprayed to a height where the processing liquid L reaches the lower surface b of the substrate W for processing. The processing control unit 42 controls the flow rate adjustment unit 38 to make the flow rate greater than that when the temperature is controlled, so that the spraying height of the processing liquid L becomes the height where it reaches the lower surface b of the substrate W.

[0045] [Processing Method] In addition to Figures 1 to 5, the operation of the substrate processing apparatus 1 of this embodiment as described above will be explained with reference to the flowchart in Figure 6. Furthermore, a substrate processing method for processing the substrate W by means of the following process is also a form of this embodiment.

[0046] As shown in Figure 4, the control device 40 pre-controls the on-off valves 37a and 37c to the closed state and the on-off valve 37b to the open state, so as to control the circulation of the treatment liquid L in the piping 36. That is, the treatment liquid L passes through the heating unit 35 and is maintained at a predetermined temperature.

[0047] The substrate W, which is the object of processing, is a substrate on which a silicon nitride film or a silicon oxide film is formed. Regarding the substrate W in this embodiment, both the upper surface t and the lower surface b are etched. First, by opening the holding member 12, the substrate W, mounted on the hand of the transport robot, is placed in the hand, and then the holding member 12 is closed, holding the outer periphery of the substrate W by the holding member 12 (step S01). Then, the rotating body 11 rotates, causing the substrate W to rotate (step S02).

[0048] Subsequently, the process is divided into steps S03 to S08 for processing the upper surface t of the substrate W and steps S09 to S16 for processing the lower surface b of the substrate W. In this embodiment, as shown in FIG1, since the processing of the upper surface t and the lower surface b of the substrate W is performed simultaneously, steps S03 to S08 and steps S09 to S16 are performed in parallel.

[0049] First, the processing flow for the upper surface t of the substrate W will be described. A pre-rinsing process is performed on the upper surface t of the substrate W (step S03). This pre-rinsing process is a preparatory step for the etching process of the substrate W. The upper surface treatment liquid supply unit 20 sprays cleaning liquid from the cleaning liquid spray nozzle onto the upper surface t of the substrate W, initiating the pre-rinsing process for the upper surface t of the substrate W. The pre-rinsing process continues until a predetermined time has elapsed (step S04, "No"). The predetermined time is, for example, 30 seconds.

[0050] After a predetermined time has elapsed (step S04, "Yes"), etching of the upper surface t of the substrate W is performed (step S05). The upper surface treatment liquid supply unit 20 sprays treatment liquid L from the upper surface spray nozzle 21 toward the upper surface t of the substrate W, and the etching of the upper surface t of the substrate W begins. The etching process continues until a predetermined time has elapsed (step S06, "No"). After the predetermined time has elapsed (step S06, "Yes"), the spraying of treatment liquid L from the upper surface spray nozzle 21 is stopped, and the etching process ends.

[0051] Finally, cleaning fluid is sprayed onto the upper surface t of the substrate W for rinsing (step S07). That is, cleaning fluid is sprayed from the cleaning fluid spray nozzle toward the upper surface t of the substrate W to begin rinsing the upper surface t of the substrate W. The rinsing process continues until a predetermined time has elapsed (step S08, "No"). After the predetermined time has elapsed (step S08, "Yes"), the rinsing process ends, and the treatment of the upper surface t of the substrate W is completed.

[0052] On the other hand, the processing of the lower surface b of the substrate W is performed simultaneously with the processing of the upper surface t of the substrate W. After the rotation of the substrate W begins (step S02), the processing of the lower surface b of the substrate W is transferred to step S09. In the processing of the lower surface b of the substrate W, the pre-rinsing process and temperature control are performed in parallel with the preparation step (pre-rinsing process) of the upper surface t of the substrate W.

[0053] First, cleaning fluid is supplied to the lower surface b of the substrate W to perform a pre-rinsing treatment of the lower surface b of the substrate W (step S09). The cleaning fluid spray nozzle 39 of the lower surface treatment fluid supply unit 30 sprays cleaning fluid to the lower surface b of the substrate W to perform a pre-rinsing treatment of the lower surface b of the substrate W. At this time, as shown in FIG4, the control device 40 controls the on / off valves 37a and 37c to be closed and the on / off valve 37b to be open, so that the treatment fluid L circulates in the delivery pipe 361 and the circulation pipe 362. That is, the treatment fluid L passes through the heating unit 35, thereby maintaining a predetermined temperature. The pre-rinsing treatment is performed until a predetermined time has elapsed (step S10, "No"). The predetermined time is, for example, 15 seconds.

[0054] After a predetermined time has elapsed (step S10, "Yes"), the temperature control unit 41 performs temperature control (step S11). That is, as shown in FIG5, the temperature control unit 41 controls the on / off valves 37a and 37c to be in the open state, and controls the on / off valve 37b to be in the closed state. In addition, the temperature control unit 41 controls the flow rate adjustment unit 38 so that the spray height of the processing liquid L does not reach the lower surface b of the substrate W.

[0055] The processing liquid L, heated to a predetermined temperature by the heating unit 35, flows through the lower surface supply pipe 33 to the lower surface ejection nozzle 32. As the heated processing liquid L flows through the lower surface supply pipe 33, the lower surface supply pipe 33 is heated by heat conduction from the processing liquid L. During temperature control, the processing liquid L is only ejected to a height that does not reach the lower surface b of the substrate W, therefore no etching process is performed on the lower surface b of the substrate W.

[0056] The temperature rise control continues until the temperature of the liquid flowing through the lower surface supply pipe 33 reaches the same level as the temperature of the liquid being sprayed during the processing control (step S12, "No"). The specified time is, for example, 15 seconds. After the temperature rise control is performed for the specified time (step S12, "Yes"), the lower surface supply pipe 33 is heated to the same level as the temperature of the liquid being circulated in the piping 36. That is, even if the liquid being circulated to the specified temperature passes through the lower surface supply pipe 33, the temperature of the liquid being circulated will not decrease.

[0057] The pre-rinsing treatment (step S09) and temperature control (step S11) of the lower surface b of the substrate W are performed in parallel with the pre-rinsing treatment (step S03) of the upper surface t of the substrate W. That is, the time for the pre-rinsing treatment (step S09) and temperature control (step S11) of the lower surface b of the substrate W is the time for the pre-rinsing treatment (step S03) of the upper surface t of the substrate W.

[0058] Furthermore, in the aforementioned process, the pre-rinsing treatment (step S09) and temperature control (step S11) of the lower surface b are each performed for 15 seconds. The combined time of the pre-rinsing treatment and temperature control is the same as the time of the preparation step (pre-rinsing treatment) of the upper surface t. However, the time is not limited to this as long as the temperature of the lower surface supply pipe 33 can be raised to the same level as the temperature of the treatment liquid L sprayed during treatment control. For example, the pre-rinsing treatment (step S09) can be set to 10 seconds, and the temperature control (step S11) can be set to 20 seconds. In addition, the preparation step time can be set to 30 seconds as a whole, but the preparation step time can be shorter or longer.

[0059] After the temperature rise is controlled for a specified time, the processing control unit 42 performs processing control (step S13). The lower surface processing liquid supply unit 30 sprays processing liquid L from the lower surface ejection nozzle 32 onto the lower surface b of the substrate W to perform etching processing on the lower surface b of the substrate W. As shown in FIG2, the processing control unit 42 sets the on / off valves 37a and 37c to the open state, sets the on / off valve 37b to the closed state, and controls the flow rate adjustment unit 38 so that the ejection height of the processing liquid L reaches the lower surface b of the substrate W.

[0060] Processing control is continuously performed from heating control. "Continuously performed" means that the process liquid L is ejected from the lower surface nozzle 32 without stopping the flow. In other words, during the transition from heating control to processing control, there is no time when the process liquid L is not flowing in the lower surface supply pipe 33. Even after heating control ends, the heating control unit 41 does not close the on / off valve 37a, and the processing control unit 42 controls the flow adjustment unit 38 while the on / off valve 37a remains open. Therefore, during the transition from heating control to processing control, the temperature drop of the lower surface supply pipe 33, which is heated by heating control, is suppressed.

[0061] The processing control (etching process) continues until a predetermined time has elapsed (step S14, "No"). After the predetermined time has elapsed (step S14, "Yes"), the ejection of processing liquid L from the lower surface ejection nozzle 32 is stopped. By using the processing control unit 42 to set the on / off valves 37a and 37c to the closed state and the on / off valve 37b to the open state, the ejection of processing liquid L from the lower surface ejection nozzle 32 is stopped, and the processing liquid L circulates in the piping 36. Thus, the etching process of the lower surface b of the substrate W is completed. In addition, the etching process of the lower surface b of the substrate W (step S13) and the etching process of the upper surface t of the substrate W (step S05) are performed in parallel.

[0062] Finally, cleaning fluid is sprayed onto the lower surface b of the substrate W for rinsing (step S15). That is, cleaning fluid is sprayed from the cleaning fluid spray nozzle 39 of the lower surface treatment fluid supply unit 30 onto the lower surface b of the substrate W to begin rinsing the lower surface b of the substrate W. The rinsing process continues until a predetermined time has elapsed (step S16, "No"). After the predetermined time has elapsed (step S16, "Yes"), the rinsing process ends, and the treatment of the lower surface b of the substrate W is completed.

[0063] After the rinsing treatment of the upper surface t and the lower surface b of the substrate W are completed (step S08, "Yes", step S16, "Yes"), the rotating body 11 stops rotating, and the rotation of the substrate W stops (step S17). After the rotation of the substrate W stops, the hand of the transport robot is inserted under the substrate W, and the holding member 12 is in the open position, thereby releasing the substrate W. The substrate W is placed on the hand of the transport robot and moved out to the outside of the substrate processing device 1 (step S18).

[0064] [Effect] (1) As described above, the substrate processing apparatus 1 of this embodiment includes: a rotation holding unit 10 for holding and rotating the substrate W; a lower surface ejection nozzle 32 for ejecting processing liquid L toward the lower surface b of the substrate W; a lower surface supply pipe 33 connected to the lower surface ejection nozzle 32; a heating unit 35 for heating the processing liquid L supplied to the lower surface supply pipe 33; a flow rate adjustment unit 38 for adjusting the flow rate of the processing liquid L ejected from the lower surface ejection nozzle 32; and a control device 40 for controlling the flow rate adjustment unit 38. The control device 40 includes: a temperature control unit 41 for controlling the flow rate adjustment unit 38 to eject the processing liquid L to a height that does not reach the lower surface b of the substrate W while the rotation holding unit 10 holds the substrate W, and for heating the lower surface supply pipe 33; and a processing control unit 42 for controlling the flow rate adjustment unit 38 after heating the lower surface supply pipe 33, so that the processing liquid L is ejected to a height that reaches the lower surface b of the substrate W, and the substrate W is processed.

[0065] In addition, the substrate processing method of this embodiment includes: a holding step, holding the substrate W; a rotation step, rotating the substrate W; a heating step, after the holding step, adjusting the flow rate of the processing liquid L ejected from the lower surface ejection nozzle 32 to eject the heated processing liquid L from the lower surface ejection nozzle 32 connected to the lower surface supply pipe 33 to a height that does not reach the lower surface b of the substrate W, and heating the lower surface supply pipe 33; and a processing step, after the heating step, adjusting the flow rate of the processing liquid L ejected from the lower surface ejection nozzle 32 to eject the processing liquid L from the lower surface ejection nozzle 32 to a height that reaches the lower surface b of the substrate W, and processing the substrate W.

[0066] Thus, in the pre-processing stage of the substrate W, the lower surface supply pipe 33 can be heated by the heating control based on the heating control unit 41. Furthermore, during the heating control, the spray height of the processing liquid L ejected from the lower surface ejection nozzle 32 is such that it does not reach the lower surface b of the substrate W, therefore the processing liquid L is not supplied to the substrate W. Therefore, the processing of the lower surface b of the substrate W will not be performed due to the processing liquid L, thus preventing the processing of the substrate W from being performed at a low processing rate.

[0067] Then, the lower surface b of the substrate W is processed by the processing control unit 42. At this time, the lower surface supply pipe 33 is heated by the temperature control, so the temperature drop of the processing liquid L supplied to the lower surface b of the substrate W can be suppressed during processing control. Therefore, a high processing rate can be maintained during the processing of the lower surface b of the substrate W.

[0068] Furthermore, since the temperature rise control is performed while the substrate W is being held, the process control can be immediately transferred after the temperature rise control. Therefore, when transferring from temperature rise control to process control, the temperature drop of the lower surface supply tube 33 after temperature rise can be suppressed.

[0069] (2) The substrate processing apparatus further includes a nozzle head 31, which has a recess 311 facing the lower surface b of the substrate W and a drain hole 312 opening in the recess 311. A lower surface ejection nozzle 32 is provided in the nozzle head 31. The heating control unit 41 controls the flow rate adjustment unit 38 so that the processing liquid L ejected from the lower surface ejection nozzle 32 adheres to the recess 311. As a result, the processing liquid L can be prevented from scattering to the constituent components of the substrate processing apparatus 1, such as the rotating body 11, and the processing liquid can be prevented from adhering to the substrate W from the constituent components.

[0070] (3) After the flow rate adjustment unit 38 based on the temperature control unit 41 controls the flow rate adjustment unit 38 to process the substrate W without stopping the ejection of the processing liquid L. That is, during the transition from temperature control to processing control, the processing liquid L also flows in the lower surface supply pipe 33. As a result, during the transition from temperature control to processing control, the temperature drop of the lower surface supply pipe 33 after temperature rise can be suppressed. Therefore, during processing control, the temperature drop of the processing liquid L can be suppressed more effectively.

[0071] (4) The processing solution L is an etching solution. Therefore, the temperature drop of the etching solution during the processing control of the lower surface b of the substrate W can be suppressed. Therefore, a high etching rate can be maintained in the lower surface b of the substrate W for processing.

[0072] (5) The substrate processing apparatus further includes an upper surface ejection nozzle 21 that ejects processing liquid L toward the upper surface t of the substrate W, and the processing control unit 42 causes the processing liquid L to be ejected from the upper surface ejection nozzle 21. In this way, the upper surface t and the lower surface b of the substrate W are processed in parallel. Assuming that the temperature of the processing liquid L supplied to the lower surface b of the substrate W is lower than the temperature of the processing liquid L supplied to the upper surface t, heat moves through the substrate W from the processing liquid L supplied to the upper surface t to the processing liquid L supplied to the lower surface b by heat conduction. Therefore, there is a concern that the temperature of the processing liquid L supplied to the region of the upper surface t corresponding to the region in the lower surface b where the processing liquid L is ejected may decrease. If the temperature of the processing liquid L supplied to the region of the upper surface t decreases, the temperature distribution of the processing liquid L supplied to the upper surface t becomes uneven, and the in-plane processing rate of the upper surface t becomes uneven.

[0073] On the other hand, in this embodiment, by heating the lower surface supply pipe 33 through temperature control, the temperature drop of the processing liquid L sprayed onto the lower surface b of the substrate W is suppressed during processing control. Therefore, by spraying the processing liquid L onto the lower surface b of the substrate W, the temperature drop of the processing liquid L sprayed onto the upper surface t of the substrate W can be suppressed. Therefore, the temperature distribution of the processing liquid L sprayed onto the upper surface t of the substrate W becomes uniform, and the in-plane processing rate of the upper surface t can be maintained.

[0074] (6) The temperature of the processing liquid L supplied to the lower surface supply pipe 33 by the flow adjustment unit 38 controlled by the heating control unit 41 is above the temperature of the processing liquid L supplied to the lower surface supply pipe 33 by the flow adjustment unit 38 controlled by the processing control unit 42. In this embodiment, the temperature of the processing liquid L supplied to the lower surface supply pipe 33 during heating control is the same predetermined temperature as the temperature of the processing liquid L supplied to the lower surface supply pipe 33 during processing control. Therefore, the heating of the lower surface supply pipe 33 can be performed quickly, and the efficiency of heating control is improved. In addition, the lower surface supply pipe 33 can be heated to the same temperature as the processing liquid L sprayed during processing control, and the temperature drop of the processing liquid L passing through the lower surface supply pipe 33 can be suppressed.

[0075] (7) The temperature control unit 41 controls the flow rate adjustment unit 38 until the temperature of the lower surface supply pipe 33 or the temperature of the processing liquid L flowing in the lower surface supply pipe 33 reaches or exceeds a preset temperature. In this embodiment, the temperature control is performed for a predetermined time until the temperature of the lower surface supply pipe 33 reaches the same level as the temperature of the processing liquid L sprayed during processing control. As a result, the lower surface supply pipe 33 can be heated to the same level as the temperature of the processing liquid L sprayed during processing control, and the temperature drop of the processing liquid L passing through the lower surface supply pipe 33 can be suppressed.

[0076] [Second Embodiment] The substrate processing apparatus 1 of the second embodiment will be described with reference to the accompanying drawings. Furthermore, the same symbols are used for structures and functions identical to those in the first embodiment, and detailed descriptions are omitted. In the first embodiment, temperature control is performed while the substrate W is being moved in and held and rotated; however, in the second embodiment, temperature control is performed before the substrate W is moved in.

[0077] As shown in FIG. 7, the substrate processing apparatus 1 first performs temperature control by the temperature control unit 41 of the control device 40 (step S20). That is, the lower surface supply pipe 33 is heated while the holding member 12 is not holding the substrate W. As shown in FIG. 8, the temperature control unit 41 can control the flow rate adjustment unit 38 to spray the processing liquid L to a height above the lower surface b of the substrate W while the substrate W is being held. Thus, even if the control device 40 controls the flow rate adjustment unit 38, the processing of the substrate W will not start because the substrate W is not held by the holding member 12. Furthermore, in FIG. 8, the substrate W is not actually present, but it is shown as a dashed line to illustrate the spray height of the processing liquid L.

[0078] However, the temperature control unit 41 controls the flow rate adjustment unit 38 so that the sprayed treatment liquid L adheres to the recess 311 of the nozzle head 31. That is, during temperature control, the treatment liquid L sprayed from the lower surface spray nozzle 32 is received by the recess 311, discharged through the drain hole 312 and via the drain path 313. The flow rate control of the flow rate adjustment unit 38 can be based solely on the angle of the lower surface spray nozzle 32 or the size of the recess 311.

[0079] The temperature control is performed for a predetermined time (step S21, "No"). After the predetermined time has elapsed (step S21, "Yes"), the substrate W is brought in, and the outer periphery of the substrate W is held by the holding member 12 (step S01). The rotating body 11 rotates, thereby rotating the substrate W (step S02). Moreover, as in the first embodiment, both the upper surface t and the lower surface b of the substrate W are etched. In the processing of the lower surface b of the substrate W, since the temperature control has already been performed, the processing control, i.e., the etching process, is performed immediately after the substrate pre-rinsing process (step S09) (step S13). After the processing of both the upper surface t and the lower surface b of the substrate W is completed, the rotation of the substrate W is stopped (step S17), the substrate is released and moved out of the substrate processing apparatus 1 (step S18).

[0080] As described above, the substrate processing apparatus 1 of this embodiment includes: a rotation holding unit 10 for holding and rotating a substrate W; a nozzle head 31 having a recess 311 facing the lower surface b of the substrate W held by the rotation holding unit 10 and a drain hole 312 opening in the recess 311; a lower surface ejection nozzle 32 for ejecting processing liquid L toward the lower surface b of the substrate W; a lower surface supply pipe 33 connected to the lower surface ejection nozzle 32; a heating unit 35 for heating the processing liquid L supplied to the lower surface supply pipe 33; and a flow rate adjustment unit 38 for adjusting the flow rate of the liquid ejected from the lower surface ejection nozzle 32. The flow rate of the processing liquid L is adjusted; and a control device 40 controls the flow rate adjustment unit 38. The control device 40 includes: a heating control unit 41, which controls the flow rate adjustment unit 38 so that the processing liquid L ejected from the lower surface ejection nozzle 32 adheres to the recess 311 and heats the lower surface supply pipe 33; and a processing control unit 42, which, after heating the lower surface supply pipe 33, controls the flow rate adjustment unit 38 while the substrate W is held by the rotating holding unit 10, so that the lower surface ejection nozzle 32 ejects the processing liquid L to a height reaching the lower surface b of the substrate W, and processes the substrate W.

[0081] In addition, the substrate processing method of this embodiment includes: a heating step, in which heated processing liquid L is sprayed from a lower surface ejection nozzle 32 connected to a lower surface supply pipe 33, and the lower surface supply pipe 33 is heated; a holding step, in which the substrate W is held; a rotation step, in which the substrate W is rotated; and a processing step, in which the flow rate of the processing liquid L sprayed from the lower surface ejection nozzle 32 is adjusted so that the processing liquid L is sprayed from the lower surface ejection nozzle 32 to a height reaching the lower surface b of the substrate W, and the substrate W is processed. In the heating step, the flow rate of the processing liquid L sprayed from the lower surface ejection nozzle 32 is adjusted so that the processing liquid L sprayed from the lower surface ejection nozzle 32 adheres to the recess 311 of the drain hole 312 opening and facing the lower surface b of the substrate W.

[0082] Thus, during temperature control, the lower surface supply pipe 33 can be heated, and during processing control, the temperature drop of the processing liquid L can be suppressed. Furthermore, during temperature control, the flow rate of the processing liquid L ejected from the lower surface ejection nozzle 32 is adjusted so that it adheres to the recess 311 of the nozzle head 31. Therefore, it is possible to prevent the processing liquid L from splashing onto the rotating body 11 and other components, and to prevent contamination of the components of the substrate processing apparatus 1.

[0083] [Modification] (1) The lower surface treatment liquid supply unit 30 may also have a flow detection unit for detecting the flow rate of the treatment liquid L ejected from the lower surface ejection nozzle 32. The flow detection unit may be provided in the lower surface supply pipe 33. Then, the heating control unit 41 controls the flow adjustment unit 38 based on the flow rate of the treatment liquid L detected by the flow detection unit. Thus, when the flow rate of the treatment liquid L is greater than a predetermined value, the heating control unit 41 can control the flow rate of the treatment liquid L ejected from the lower surface ejection nozzle 32 to decrease by means of the flow adjustment unit 38. In addition, when the flow rate of the treatment liquid L is less than a predetermined value, the heating control unit 41 can control the flow rate of the treatment liquid L ejected from the lower surface ejection nozzle 32 to increase by means of the flow adjustment unit 38. Therefore, in temperature control, while ensuring efficient heating of the lower surface supply pipe 33, the spray height of the processing liquid L can be more accurately controlled to a height that does not reach the lower surface b of the substrate W or to a height that adheres to the recess 311 of the nozzle head 31.

[0084] Furthermore, not only the temperature control unit 41, but also the processing control unit 42 can control the flow adjustment unit 38 based on the detection results of the flow detection unit. Therefore, even during processing control, the flow rate of the processing liquid L can be controlled more accurately. Thus, the flow rate of the processing liquid L supplied to the lower surface b of the substrate W can be accurately controlled, and the substrate W can be processed.

[0085] (2) The lower surface treatment liquid supply unit 30 may also have a temperature detection unit that detects the temperature of the treatment liquid L or the lower surface supply pipe 33. The temperature detection unit may be installed in the lower surface supply pipe 33. Then, the heating control unit 41 ends the heating control after the temperature detected by the temperature detection unit reaches the specified temperature (the same temperature as the treatment liquid L flowing in the pipe 36 heated by the heated unit 35). As a result, heating control can be performed efficiently, thus improving the processing efficiency.

[0086] (3) The flow adjustment unit 38 is not limited to a needle valve. The flow adjustment unit 38 can be used as long as the flow rate can be adjusted, for example, it can also be a mass flow controller. In this case, as shown in FIG9, the piping 36 does not need to have a flow adjustment piping 364. In this case, the flow adjustment unit 38 is provided in the circulation piping 362 instead of the on / off valve 37b. Therefore, the piping 36 can be miniaturized and simplified.

[0087] (4) During processing control, the processing control unit 42 controls the on-off valves 37a and 37c to be in the open state and the on-off valve 37b to be in the closed state. However, it may also control the on-off valve 37a to be in the open state and the on-off valves 37b and 37c to be in the closed state. That is, the on-off valve 37c may also function as a flow adjustment unit 38 for adjusting the flow rate of the processing liquid L ejected from the nozzle 32 on the lower surface. For example, the inner diameter of the flow adjustment pipe 364 may be adjusted when the on-off valves 37a and 37c are in the open state and the on-off valve 37b is in the closed state so that the ejection height of the processing liquid L is such that it does not reach the lower surface b of the substrate W. In the case described above, when the on-off valve 37a is in the open state and the on-off valves 37b and 37c are in the closed state, the ejection height of the processing liquid L is such that it reaches the lower surface b of the substrate W.

[0088] (5) In the first embodiment, after the temperature control, the processing control is continuously performed without stopping the spraying of the processing liquid L. However, the temperature control unit 41 may also stop the spraying of the processing liquid L once after the temperature control, and then transfer to the processing control unit 42.

[0089] (6) In the first embodiment, temperature control (step S11) is performed after the pre-rinsing process (step S09), but the pre-rinsing process (step S09) and temperature control (step S11) can also be performed in parallel. That is, while the cleaning liquid is being sprayed from the cleaning liquid spray nozzle 39 toward the lower surface b of the substrate W, the treatment liquid L can also be sprayed from the lower surface spray nozzle 32 to a height that does not reach the lower surface b of the substrate W. Here, as described above, the cleaning liquid spray nozzle 39 is provided in the recess 311 at a position that does not face the lower surface spray nozzle 32 (see FIG3). Therefore, the cleaning liquid sprayed from the cleaning liquid spray nozzle 39 and the treatment liquid L sprayed from the lower surface spray nozzle 32 will not interfere with each other, and the pre-rinsing process (step S09) and temperature control (step S11) can be performed in parallel.

[0090] (7) When processing multiple substrates W, the heating control time of the substrate W processed in the N+1th time can be changed based on the elapsed time since the processing control of the substrate W processed in the Nth time. That is, if the elapsed time since the processing control of the substrate W processed in the Nth time is short, the heating control time of the N+1th time is shortened; if the elapsed time since the processing control of the substrate W processed in the Nth time is long, the heating control time of the N+1th time is extended. As a result, the heating control can be performed based on the temperature of the lower surface supply tube 33, which decreases due to the elapsed time since the processing control, so the lower surface supply tube 33 can be heated efficiently.

[0091] (8) In the above embodiment, the etching solution is sprayed out by means of temperature control and processing control, but it may not be an etching solution. In addition, the processing solution L sprayed out by means of temperature control and the processing solution L sprayed out by means of processing control may also be different.

[0092] (9)The substrate processing apparatus 1 is not limited to etching processing using an etching solution. The substrate processing apparatus 1 can be used as long as the lower surface b of the substrate W is processed using a processing solution L that requires preheating.

[0093] (10) The temperature of the processing liquid L supplied to the lower surface supply pipe 33 in the heating control may also be different from the temperature of the processing liquid L supplied to the lower surface supply pipe 33 in the processing control. For example, the temperature of the processing liquid L supplied to the lower surface supply pipe 33 in the heating control may be higher than the temperature of the processing liquid L supplied to the lower surface supply pipe 33 in the processing control. As a result, the lower surface supply pipe 33 can be heated quickly, and the efficiency of the heating control is improved. In addition, in the case described above, the processing liquid L supplied to the lower surface supply pipe 33 in the heating control may also be a different processing liquid L from the processing liquid L supplied to the lower surface supply pipe 33 in the processing control. Furthermore, since the temperature of the lower surface supply pipe 33 may also be higher than that of the processing liquid L ejected in the processing control, the temperature drop of the processing liquid L ejected from the lower surface ejection nozzle 32 during processing control can be suppressed more effectively.

[0094] (11) The heating control unit 41 may also heat the lower surface supply pipe 33 to the same temperature as the processing liquid L flowing in the lower surface supply pipe 33 during processing control. In addition, in the above embodiment, the heating control unit 41 performs heating control until the lower surface supply pipe 33 reaches the same temperature as the processing liquid L sprayed during processing control, but it may also perform heating control until the lower surface supply pipe 33 reaches a higher temperature than the processing liquid L sprayed during processing control. In the case of discontinuous heating control and processing control, there is a concern that the temperature of the heated lower surface supply pipe 33 may decrease during the time between heating control and processing control. Therefore, the lower surface supply pipe 33 is heated by heating control, taking into account the potential temperature decrease. This prevents the temperature of the processing liquid L sprayed during processing control from decreasing from a predetermined temperature.

[0095] (12) In the above embodiment, the processing of both the upper surface t and the lower surface b of the substrate W is performed in parallel, but the processing of only the lower surface b of the substrate W may also be performed. Alternatively, the processing of the upper surface t of the substrate W may be performed, and then the processing of the lower surface b of the substrate W may be performed. In this case, after the processing of the upper surface t of the substrate W is completed, the processing of the lower surface b of the substrate W can be performed without reversing the substrate W, thus improving the processing efficiency.

[0096] [Other Embodiments] Embodiments of the present invention have been described in this specification, but these embodiments are given by way of example and are not intended to limit the scope of the invention. Such embodiments can be implemented in various other ways, and various omissions, substitutions, and modifications can be made without departing from the scope of the invention. Embodiments or variations thereof are included in the scope or spirit of the invention, and are equally included in the scope of the invention described in the claims and their equivalents. [Simplified Explanation of the Diagram]

[0012] FIG1 is a schematic side view showing the overall structure of the substrate processing apparatus of the first embodiment. FIG2 is a schematic diagram showing the ejection state of the processing liquid during processing control in the first embodiment. FIG3 is a plan view of the nozzle head in the first embodiment. FIG4 is a schematic diagram showing the state in the first embodiment where no processing liquid is ejected. FIG5 is a schematic diagram showing the ejection state of the processing liquid during temperature control in the first embodiment. FIG6 is a flowchart showing the processing method in the first embodiment. FIG7 is a flowchart showing the processing method in the second embodiment. FIG8 is a schematic diagram showing the ejection state of the processing liquid during temperature control in the second embodiment. FIG9 is a schematic diagram showing the structure of the piping in the modified example.

Claims

1. A substrate processing apparatus, characterized in that it comprises: The rotating holding part holds the substrate and rotates it; A nozzle on the lower surface sprays a processing liquid toward the lower surface of the substrate; A lower surface supply pipe is connected to the lower surface ejection nozzle; a heating unit heats the processing liquid supplied to the lower surface supply pipe; and a flow rate adjustment unit adjusts the flow rate of the processing liquid ejected from the lower surface ejection nozzle. The system also includes a control device for controlling the flow adjustment unit. The control device includes: a heating control unit that controls the flow adjustment unit while the substrate is held in place by the rotating holding unit, to spray the processing liquid to a height that does not reach the lower surface of the substrate and to heat the lower surface supply pipe; and a processing control unit that, after heating the lower surface supply pipe, controls the flow adjustment unit to spray the processing liquid to a height that reaches the lower surface of the substrate and to process the substrate.

2. A substrate processing apparatus, characterized in that it comprises: The rotating holding part holds the substrate and rotates it; The nozzle head has a recess that faces the lower surface of the substrate held by the rotating holding portion and a drain hole that opens in the recess. A nozzle is provided on the lower surface to spray the treatment liquid toward the lower surface of the substrate; A lower surface supply pipe is connected to the lower surface ejection nozzle; a heating unit heats the processing liquid supplied to the lower surface supply pipe; and a flow rate adjustment unit adjusts the flow rate of the processing liquid ejected from the lower surface ejection nozzle. The control device includes a temperature control unit that controls the flow adjustment unit to cause the treatment liquid ejected from the nozzle on the lower surface to adhere to the recess and to heat the supply pipe on the lower surface. The processing control unit, after heating the lower surface supply pipe, controls the flow adjustment unit while the substrate is held in place by the rotating holding unit, so that the lower surface ejection nozzle ejects the processing liquid to a height reaching the lower surface of the substrate, and processes the substrate.

3. The substrate processing apparatus according to claim 1, characterized in that it further includes a nozzle head having a recess disposed facing the lower surface of the substrate and a drain hole opening in the recess, the lower surface ejection nozzle being disposed on the nozzle head, and the temperature control unit controlling the flow adjustment unit to cause the processing liquid ejected from the lower surface ejection nozzle to adhere to the recess.

4. The substrate processing apparatus according to any one of claims 1 to 3, characterized in that it further includes a flow detection unit disposed on the lower surface supply pipe for detecting the flow rate of the processing liquid, and the temperature control unit controls the flow adjustment unit based on the flow rate detected by the flow detection unit.

5. The substrate processing apparatus according to any one of claims 1 to 3, characterized in that it further includes a temperature detection unit, the temperature detection unit detecting the temperature of the lower surface supply pipe or the temperature of the processing liquid flowing in the lower surface supply pipe, the temperature control unit controlling the flow rate adjustment unit based on the temperature detected by the temperature detection unit, and ending the temperature rise of the lower surface supply pipe.

6. The substrate processing apparatus according to any one of claims 1 to 3, characterized in that the processing control unit controls the flow adjustment unit to process the substrate without stopping the ejection of the processing liquid after the flow adjustment unit is controlled by the heating control unit.

7. The substrate processing apparatus according to any one of claims 1 to 3, wherein the processing liquid is an etching solution.

8. The substrate processing apparatus according to any one of claims 1 to 3, characterized in that it further includes an upper surface spray nozzle for spraying processing liquid toward the upper surface of the substrate, and the processing control unit causes the processing liquid to be sprayed from the upper surface spray nozzle.

9. The substrate processing apparatus according to any one of claims 1 to 3, characterized in that the temperature of the processing liquid supplied to the lower surface supply pipe by the flow adjustment unit controlled by the heating control unit is above the temperature of the processing liquid supplied to the lower surface supply pipe by the flow adjustment unit controlled by the processing control unit.

10. The substrate processing apparatus according to any one of claims 1 to 3, characterized in that the temperature control unit controls the flow rate adjustment unit until the temperature of the lower surface supply pipe or the temperature of the processing liquid flowing in the lower surface supply pipe reaches or exceeds a predetermined temperature.

11. A substrate processing method, characterized in that it includes: The holding step holds the substrate; the rotation step rotates the substrate. In the heating step, after the holding step, the flow rate of the processing liquid ejected from the lower surface ejection nozzle is adjusted so that the heated processing liquid is ejected from the lower surface ejection nozzle connected to the lower surface supply pipe to a height that does not reach the lower surface of the substrate, and the lower surface supply pipe is heated. The process includes a heating step in which, after the heating step, the flow rate of the processing liquid ejected from the lower surface nozzle is adjusted to eject the processing liquid from the lower surface nozzle to a height reaching the lower surface of the substrate, and the substrate is then processed.

12. A substrate processing method, characterized in that it includes: In the heating step, heated treatment liquid is sprayed from a lower surface spray nozzle connected to the lower surface supply pipe, and the lower surface supply pipe is heated. The holding step holds the substrate; the rotation step rotates the substrate. The process includes adjusting the flow rate of the processing liquid ejected from the lower surface nozzle to eject the processing liquid from the lower surface nozzle to a height reaching the lower surface of the substrate, and processing the substrate. In the heating step, the flow rate of the processing liquid ejected from the lower surface nozzle is adjusted so that the processing liquid ejected from the lower surface nozzle adheres to the drain hole opening and the recess facing the lower surface of the substrate.

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