Photoresist with multiple patterning radiation-absorbing elements and / or vertical composition gradient

Abstract

Various embodiments herein relate to techniques for depositing photoresist materials on a substrate. For example, such techniques may involve providing the substrate in a reaction chamber; providing first and second reactants to the reaction chamber, wherein the first reactant is an organometallic precursor having the chemical formula M1aR1bL1c, wherein: M1 is a metal having a high patterned radiation absorption cross section, R1 is an organic group that can remain after the reaction between the first reactant and the second reactant and can break off from M1 upon exposure to patterned radiation, L1 is a ligand, ion, or other portion that reacts with the second reactant, a ≥ 1, b ≥ 1, and c ≥ 1, and wherein at least one of the following conditions is satisfied: the photoresist material contains two or more high patterned radiation absorption elements, and / or the photoresist material contains a compositional gradient along the thickness of the photoresist material.

Claims

1. An apparatus for depositing a metal oxide-containing photoresist material on a substrate, the apparatus comprising: a reaction chamber; an inlet for supplying a precursor and / or a reactant to the reaction chamber; and a controller having at least one processor configured to control the reaction chamber and the inlet to induce instructions to: cause a first organometallic precursor and a second organometallic precursor and a corresponding reactant to flow into the reaction chamber, The first organometallic precursor comprises a metal having a high EUV absorption cross section, a first organic group having a metal-carbon bond that remains after the vapor deposition reaction with the relative reactant, and a first ligand that reacts with the relative reactant; and the second organometallic precursor does not contain an organic group having a metal-carbon bond, but contains a second ligand that reacts with the relative reactant; and the ratio of the first organometallic precursor to the second organometallic precursor is changed during the deposition so that the metal oxide-containing photoresist material comprises a vertical compositional gradient along the thickness of the metal oxide-containing photoresist material.

2. The apparatus for depositing a metal oxide-containing photoresist material on a substrate as claimed in claim 1, wherein the ratio of the first organometallic precursor to the second organometallic precursor is changed such that the bottom of the metal oxide-containing photoresist material is more cross-linked than the top of the metal oxide-containing photoresist material.

3. The apparatus for depositing a photoresist material containing a metal oxide on a substrate as claimed in claim 1, wherein each of the first organometallic precursor and the second organometallic precursor contains tin (Sn).

4. The apparatus for depositing a photoresist material containing a metal oxide on a substrate as claimed in claim 1, wherein the first organic group is an alkyl group.

5. The apparatus for depositing a photoresist material containing a metal oxide on a substrate as claimed in claim 1, wherein the first ligand comprises an amine.

6. The apparatus for depositing a metal oxide-containing photoresist material on a substrate as claimed in claim 1, wherein the ratio of the second organometallic precursor to the first organometallic precursor decreases as the metal oxide-containing photoresist material grows.

7. The apparatus for depositing a photoresist material containing a metal oxide on a substrate as claimed in claim 1, wherein the first organometallic precursor is isopropyltris(dimethylamino)tin.

8. The apparatus for depositing a photoresist material containing a metal oxide on a substrate as claimed in claim 1, wherein the second organometallic precursor is tetra(dimethylamino)tin.

9. An apparatus for depositing a metal oxide-containing photoresist material on a substrate, the apparatus comprising: a reaction chamber; an inlet for supplying a precursor and / or a reactant to the reaction chamber; and a controller having at least one processor configured to control the reaction chamber and the inlet to induce instructions to: cause a first organometallic precursor and a second organometallic precursor and a corresponding reactant to flow into the reaction chamber, The first organometallic precursor comprises a metal having a high EUV absorption cross section, a first organic group having a metal-carbon bond that remains after the vapor deposition reaction with the relative reactant, and a first ligand that reacts with the relative reactant; and the second organometallic precursor comprises a second organic group having a metal-carbon bond that remains after the vapor deposition reaction with the relative reactant, and a second ligand that reacts with the relative reactant; and the ratio of the first organometallic precursor to the second organometallic precursor is changed during the deposition so that the metal oxide-containing photoresist material comprises a vertical compositional gradient along the thickness of the metal oxide-containing photoresist material.

10. The apparatus for depositing a photoresist material containing a metal oxide on a substrate as claimed in claim 9, wherein each of the first organometallic precursor and the second organometallic precursor contains tin (Sn).

11. The apparatus for depositing a metal oxide-containing photoresist material on a substrate as claimed in claim 9, wherein the ratio of the second organometallic precursor to the first organometallic precursor decreases as the metal oxide-containing photoresist material grows.

12. The apparatus for depositing a photoresist material containing a metal oxide on a substrate as claimed in claim 9, wherein at least one of the first ligand and the second ligand comprises an amine.

13. The apparatus for depositing a metal oxide-containing photoresist material on a substrate as claimed in claim 9, wherein the ratio is altered such that the bottom of the metal oxide-containing photoresist material is more cross-linked than the top of the metal oxide-containing photoresist material.

14. The apparatus for depositing a photoresist material containing a metal oxide on a substrate as claimed in claim 9, wherein the first organometallic precursor is isopropyltris(dimethylamino)tin.

15. The apparatus for depositing a photoresist material containing a metal oxide on a substrate as claimed in claim 9, wherein the second organometallic precursor is tert-butyltris(dimethylamino)tin.

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