Semiconductor device manufacturing wafers and their applications, and methods for manufacturing semiconductor wafers containing semiconductor device manufacturing wafers.

Abstract

A semiconductor device manufacturing wafer comprises a substrate, an adhesive layer, an intermediate layer, and a film-like adhesive; it is composed of the adhesive layer, the intermediate layer, and the film-like adhesive sequentially deposited on the substrate; the intermediate layer contains a non-silicone resin with a weight average molecular weight of 100,000 or less as the main component; the maximum cross-sectional height of the surface of the substrate opposite to the side containing the adhesive layer is 2,000 nm or less.

Description

[Technical Field]

[0001] This invention relates to a wafer for manufacturing a semiconductor device. This application claims priority based on Japanese Patent Application No. 2020-058734, filed on March 27, 2020, the contents of which are incorporated herein by reference. [Previous Technology]

[0002] In the manufacture of a semiconductor device, a semiconductor wafer having a film-like adhesive is used, which comprises a semiconductor wafer and a film-like adhesive disposed on the inner surface of the semiconductor wafer. As an example of a method for manufacturing a semiconductor wafer having a film-like adhesive, the following can be cited.

[0003] That is, firstly, a diced die is attached to the inner surface of the semiconductor wafer. Examples of diced die include a die comprising a support sheet and a film-like adhesive disposed on one surface of the support sheet, where the support sheet can be used as a dicing die. Several types of support sheets with different configurations exist, such as a support sheet comprising a substrate and an adhesive layer disposed on one surface of the substrate; or a support sheet composed solely of a substrate. In a support sheet comprising an adhesive layer, the outermost surface of the adhesive layer side becomes the surface on which the film-like adhesive is disposed. The diced die is attached to the inner surface of the semiconductor wafer by means of the film-like adhesive therein.

[0004] Next, the semiconductor wafer and the film adhesive on the support sheet are cut together by a blade. The "cutting" of the semiconductor wafer is also called "division," thereby monolithizing the semiconductor wafer into a target semiconductor chip. The film adhesive is cut along the outer periphery of the semiconductor chip. In this way, a semiconductor chip with film adhesive is obtained, consisting of a semiconductor chip and the cut film adhesive disposed on the inner surface of the semiconductor chip, and a group of semiconductor chips with film adhesive is obtained by holding a plurality of semiconductor chips with film adhesive in an orderly arrangement on the support sheet.

[0005] Next, the semiconductor wafer with film-like adhesive is peeled off from the support sheet and picked up. When a support sheet with a hardening adhesive layer is used, the adhesiveness is reduced beforehand by hardening the adhesive layer, making picking up easier. In this way, a semiconductor wafer with film-like adhesive used in the manufacture of semiconductor devices is obtained.

[0006] Other examples of methods for manufacturing semiconductor wafers with film-like adhesives include the following: First, a back-side polishing tape (sometimes called a "surface protection tape") is attached to the circuit-forming surface of a semiconductor wafer. Second, predetermined dicing regions are defined inside the semiconductor wafer, and laser light is irradiated with the region contained in these regions as the focal point, thereby forming a modifier layer inside the semiconductor wafer. Next, the inner surface of the semiconductor wafer is ground using a polishing machine to adjust the thickness of the semiconductor wafer to a target value. Using the force applied to the semiconductor wafer during this grinding process, the semiconductor wafer is diced (monodilated) at the formation site of the modifier layer to produce multiple semiconductor wafers. This method of dicing semiconductor wafers while forming a modifier layer is called stealth dicing (registered trademark), which is fundamentally different from laser dicing, which removes the irradiated areas of the semiconductor wafer by irradiating it with laser light and gradually cuts the semiconductor wafer from the surface.

[0007] Next, a bonding wafer is attached to the inner surface (in other words, the ground surface) of all these semiconductor wafers fixed on the back grinding belt after the above-described grinding. The bonding wafer can be the same as the diced bonding wafer described above. Sometimes, the bonding wafer can be designed to be used only outside of semiconductor wafer dicing but with the same structure as the diced bonding wafer. The bonding wafer is also attached to the inner surface of the semiconductor wafer by means of a film-like adhesive.

[0008] Next, after the back-side polishing tape is removed from the semiconductor wafer, while cooling the wafer, the surface of the wafer (e.g., the surface where the film adhesive adheres to the semiconductor wafer) is stretched in a parallel direction, i.e., so-called expansion (cold expansion), thereby cutting the film adhesive along the outer periphery of the semiconductor wafer. In this way, a semiconductor wafer with film adhesive is obtained, consisting of a semiconductor wafer and the cut film adhesive disposed on the inner surface of the semiconductor wafer.

[0009] Secondly, similar to the case of cutting with a blade described above, the semiconductor wafer with film adhesive is pulled off and picked up from the support sheet, thereby obtaining the semiconductor wafer with film adhesive used in the manufacture of semiconductor devices.

[0010] Another example of a method for manufacturing a semiconductor wafer with a film-like adhesive can be given as follows. First, trenches are formed from one side of the semiconductor wafer that serves as the circuit formation surface by methods such as blade cutting, laser cutting, or water jet cutting. This process is also known as a half-cut.

[0011] Next, a back polishing tape (sometimes called a "surface protection tape") is attached to the circuit forming surface of the semiconductor wafer. Next, the opposite side of the circuit forming surface of the semiconductor wafer is polished with a polishing machine until the formed trench is reached, thereby dividing the semiconductor wafer (monodividing) and producing multiple semiconductor chips.

[0012] Next, a bonding wafer is attached to the inner surface (in other words, the ground surface) of all the semiconductor wafers fixed on the back polishing tape after the above-mentioned polishing. Next, the back polishing tape is removed from the semiconductor wafers. The semiconductor wafers are fixed to the substrate by a film adhesive.

[0013] The film-like adhesive can be cut along the outer periphery of a semiconductor wafer by laser irradiation and expansion. This method, which reverses the previous wafer cutting process after inner surface grinding, is called Dicing Before Grinding (DBG). In addition, the stealth dicing (registered trademark) mentioned above is also called SDBG (Stealth Dicing Before Grinding), which is a variation of Dicing Before Grinding.

[0014] Both die-cutting and die-bonding can be used to manufacture semiconductor wafers with film-like adhesives, ultimately achieving the manufacturing goal of a semiconductor device. In this specification, die-cutting and die-bonding are referred to as "semiconductor device manufacturing wafers".

[0015] As a wafer for manufacturing semiconductor devices, for example, a dicing ribbon (equivalent to the aforementioned dicing wafer) is disclosed, comprising a substrate layer (equivalent to the aforementioned support sheet) and an adhesive layer (equivalent to the aforementioned film adhesive) deposited in direct contact (see Patent Document 1). Because the dicing ribbon adjusts the 90-degree peel force of the substrate layer and the adhesive layer at -15°C within a specific range, the adhesive layer can be separated with high precision by expansion. Furthermore, because the 90-degree peel force of the substrate layer and the adhesive layer is adjusted within a specific range at 23°C, using this dicing ribbon allows for easy picking up of semiconductor wafers with adhesive layers (equivalent to the aforementioned semiconductor wafers with film adhesives), and suppresses the peeling of the semiconductor wafer and semiconductor wafer relative to the adhesive layer during the picking process. [Prior Art Documents] [Patent Documents]

[0016] [Patent Document 1] Japanese Patent Application Publication No. 2018-56289. [Summary of the Invention]

[0017] [The problem that the invention aims to solve]

[0018] A semiconductor wafer with a film-like adhesive can be obtained by attaching the cut and bonded wafer (semiconductor device manufacturing wafer) described in Patent Document 1 to a semiconductor wafer obtained by the DBG method and expanding it.

[0019] In the expansion step, the surface opposite to the side with the adhesive layer in the substrate of the semiconductor device manufacturing wafer (the back side of the substrate) is expanded by using an adsorption stage and an upward member.

[0020] At this time, an adsorption stage is used to attract the back side of the substrate of the semiconductor device manufacturing wafer, thereby fixing the semiconductor wafer group with film adhesive.

[0021] When using an adsorption stage to attract the back side of a substrate for manufacturing semiconductor devices, sometimes leakage occurs in the adsorption of the adsorption stage, causing the adsorption between the back side of the substrate and the adsorption stage to be released.

[0022] Therefore, the object of the present invention is to provide a wafer for manufacturing semiconductor devices that can suppress the release of adsorption between the back side of the substrate and the adsorption stage. [Means for solving the problem]

[0023] The present invention has the following aspects. (1) A semiconductor device manufacturing wafer comprising a substrate, an adhesive layer, an intermediate layer, and a film adhesive; wherein the adhesive layer, the intermediate layer, and the film adhesive are sequentially deposited on the aforementioned substrate; the intermediate layer contains a non-silicone resin with a weight average molecular weight of 100,000 or less as a main component; and the maximum cross-sectional height of the surface opposite to the side of the aforementioned substrate having the adhesive layer is 2,000 nm or less. (2) The semiconductor device manufacturing wafer as described in (1), wherein the surface roughness of the surface opposite to the side of the aforementioned substrate having the adhesive layer is 200 nm or less. (3) The semiconductor device manufacturing wafer as described in (1) or (2), wherein the haze of the support sheet formed by the aforementioned substrate and the aforementioned adhesive layer is 10 or more, or the total light transmittance of the aforementioned support sheet is 70% or less. (4) A semiconductor device manufacturing wafer as described in any one of (1) to (3), wherein the semiconductor device manufacturing wafer is used to manufacture the aforementioned semiconductor wafer with a film adhesive by means of a semiconductor wafer manufacturing method with a film adhesive; the aforementioned manufacturing method includes the following steps: attaching the aforementioned semiconductor device manufacturing wafer to the inner surface of a semiconductor wafer to form a laminate; while adsorbing the surface opposite to the side of the aforementioned substrate having the aforementioned adhesive layer at a temperature below 0°C using an adsorption stage, while adsorbing the aforementioned semiconductor... The device manufacturing wafer has the aforementioned intermediate layer and the aforementioned film adhesive area as a whole, which is lifted from the aforementioned substrate side by the aforementioned adsorption stage and the lifting member to expand and cut the aforementioned film adhesive, thereby obtaining a group of semiconductor wafers with film adhesive, in which a plurality of semiconductor wafers with film adhesive are neatly arranged on the aforementioned intermediate layer; and the step of heating the peripheral portion of the semiconductor wafers without the aforementioned film adhesive in the expanded wafer; wherein the area of ​​the aforementioned semiconductor wafer is 9 mm2 or less. (5) The semiconductor device manufacturing wafer as described in any one of (1) to (4), wherein the aforementioned adhesive layer contains one or more of the group consisting of a colorant and a filler.(6) A method for manufacturing a semiconductor wafer having a semiconductor device manufacturing wafer, comprising the following steps: attaching a semiconductor device manufacturing wafer as described in any one of (1) to (5) to the inner surface of a semiconductor wafer to form a laminate; while adsorbing the surface opposite to the side of the substrate having the aforementioned adhesive layer at a temperature below 0°C using an adsorption stage, and while lifting the entire area of ​​the semiconductor device manufacturing wafer having the aforementioned intermediate layer and the aforementioned film adhesive from the substrate side using the aforementioned adsorption stage and an upper lifting member, expanding and cutting the aforementioned film adhesive to obtain a group of semiconductor wafers with film adhesive arranged in a neat manner on the aforementioned intermediate layer; and heating the peripheral portion of the expanded laminate where the aforementioned semiconductor wafers without the aforementioned film adhesive are not placed. [Effect of the Invention].

[0024] According to the present invention, a wafer for manufacturing a semiconductor device can be provided, which can suppress the release of adsorption between the substrate and the adsorption stage.

Implementation Method

[0025] ◇ Semiconductor Device Manufacturing Wafer According to one embodiment of the present invention, the semiconductor device manufacturing wafer comprises a substrate, an adhesive layer, an intermediate layer, and a film adhesive; it is composed of an adhesive layer, an intermediate layer, and a film adhesive sequentially laminated on the aforementioned substrate, wherein the aforementioned intermediate layer contains a non-silicone resin with a weight average molecular weight of 100,000 or less as the main component.

[0026] The semiconductor device manufacturing wafer of this embodiment is used as a wafer bonding device for example, attached to a semiconductor wafer array obtained by the DBG method described above. The aforementioned semiconductor device manufacturing wafer has the aforementioned intermediate layer, and the maximum cross-sectional height of the surface (back side of the substrate) opposite to the side having the aforementioned adhesive layer in the substrate is 2000 nm or less. This suppresses the release of adsorption between the back side of the substrate and the adsorption stage. As a result, while the surface (back side of the substrate) opposite to the side having the aforementioned adhesive layer in the substrate of the aforementioned semiconductor device manufacturing wafer attached to the semiconductor wafer array is adsorbed by the adsorption stage at a temperature below 0°C, and while it is pushed up and expanded from the substrate side by the adsorption stage and the lifting member, the film adhesive can be cut with high precision at the target area, and cutting defects can be suppressed.

[0027] Furthermore, when the back side of the substrate is adsorbed by an adsorption stage, and the entire area of ​​the extended semiconductor device manufacturing wafer with the intermediate layer and film adhesive is lifted from the substrate side by the adsorption stage and the lifting member, and the surface of the semiconductor wafer is adsorbed and pulled up by the pulling mechanism for picking, the picking can be performed more easily.

[0028] Furthermore, when the semiconductor device manufacturing wafer of this embodiment is used as a wafer bonding device and a dicing (invisible dicing (registered trademark)) is performed, which is accompanied by the formation of a modification layer on the semiconductor wafer, since the semiconductor device manufacturing wafer has the aforementioned intermediate layer, by continuously stretching the semiconductor device manufacturing wafer in a direction parallel to the surface of the semiconductor device manufacturing wafer (e.g., the adhesion surface of the film adhesive to the semiconductor wafer), i.e., by performing so-called expansion, the film adhesive is cut off with high precision at the target location, and dicing defects can be suppressed.

[0029] Thus, the semiconductor device manufacturing wafer of this embodiment can suppress the generation of cutting chips from the substrate and intermediate layer when the blade is cut, and can suppress the poor cutting of the film adhesive during the aforementioned expansion. It has the characteristic of suppressing undesirable situations when dividing semiconductor wafers, and is excellent in semiconductor wafer dicing suitability.

[0030] On the other hand, when the semiconductor device manufacturing wafer of this embodiment is used for cutting bonded wafers with a blade, since the aforementioned semiconductor device manufacturing wafer has the aforementioned intermediate layer, the blade can easily prevent it from reaching the substrate, and the generation of whisker-like cutting chips (also known as: whiskers, hereinafter, not limited to those originating from the substrate, sometimes simply referred to as "cutting chips") from the substrate can be suppressed. In addition, since the main component of the aforementioned intermediate layer cut by the blade is a non-silicone resin with a weight average molecular weight of 100,000 or less, especially with a weight average molecular weight of 100,000 or less, the generation of the aforementioned cutting chips from the intermediate layer can also be suppressed.

[0031] In this specification, the term "weight average molecular weight" is, unless otherwise specified, the converted value of polystyrene determined by gel permeation chromatography (GPC).

[0032] The method of using the semiconductor device manufacturing wafer of this embodiment will be described in detail below.

[0033] Hereinafter, the semiconductor device manufacturing wafer of this embodiment will be described in detail with reference to the drawings. In addition, in order to facilitate understanding of the features of the present invention, the drawings used in the following description are sometimes enlarged to show the main parts, and the size ratios of each component may not be the same as the actual figures.

[0034] FIG1 is a schematic cross-sectional view of a semiconductor device manufacturing wafer according to one embodiment of the present invention, and FIG2 is a top view of the semiconductor device manufacturing wafer shown in FIG1. ​​Furthermore, in the figures following FIG2, the same reference numerals are used for the same constituent elements as those shown in the figures already described, and detailed descriptions are omitted.

[0035] The semiconductor device manufacturing wafer 101 shown here includes a substrate 11, which is formed by sequentially depositing an adhesive layer 12, an intermediate layer 13 and a film-like adhesive 14 on the substrate 11. The semiconductor device manufacturing wafer 101 further includes a release film 15 on the side of the film-like adhesive 14 opposite to the side where the intermediate layer 13 is provided (hereinafter sometimes referred to as the "first side") 14a.

[0036] The semiconductor device manufacturing wafer 101 has an adhesive layer 12 on one side (sometimes referred to as "first side" in this specification) 11a of the substrate 11, an intermediate layer 13 on the side of the adhesive layer 12 opposite to the side where the substrate 11 is disposed (sometimes referred to as "first side" in this specification), a film-like adhesive 14 on the side of the intermediate layer 13 opposite to the side where the adhesive layer 12 is disposed (sometimes referred to as "first side" in this specification), and a release film 15 on the first side 14a of the film-like adhesive 14. Thus, the semiconductor device manufacturing wafer 101 is formed by sequentially laminating the substrate 11, adhesive layer 12, intermediate layer 13, and film-like adhesive 14 in these thickness directions.

[0037] When the release film 15 has been removed, the first side 14a of the film adhesive 14 of the semiconductor device manufacturing sheet 101 is attached to the inner side of a semiconductor wafer, a semiconductor chip, or an incompletely diced semiconductor wafer (not shown).

[0038] In this specification, regardless of whether it is a semiconductor wafer or a semiconductor chip, the side on which the circuit is formed is called the "circuit forming surface", and the side opposite to the circuit forming surface is called the "inner surface".

[0039] In this specification, a laminate having a substrate and an adhesive layer deposited in the thickness direction but without an intermediate layer is sometimes referred to as a "support sheet". In Figure 1, the symbol 1 is used to denote a support sheet. Furthermore, a laminate having a substrate, an adhesive layer, and an intermediate layer deposited sequentially in the thickness direction is sometimes referred to as a "laminated sheet". In Figure 1, the symbol 10 is used to denote a laminated sheet. The aforementioned laminate containing the support sheet and the intermediate layer is included in the aforementioned laminated sheet.

[0040] The maximum cross-sectional height Rt of the surface opposite to the side of the substrate having the adhesive layer (the back surface 11b of the substrate in FIG. 1) is 2000 nm or less, preferably 1800 nm or less, and more preferably 1600 nm or less. By making the maximum cross-sectional height Rt of the back surface 11b of the substrate less than or equal to the aforementioned upper limit, the adsorption between the substrate and the adsorption stage can be suppressed when the adsorption stage is used to adsorb the back surface of the substrate.

[0041] By suppressing the release of adsorption between the back of the substrate and the adsorption stage, the step of heating the periphery of the semiconductor wafer in the laminate that is not covered with a film-like adhesive can be moved more reliably. In this way, the distance (i.e., the kerf width) between adjacent semiconductor wafers can be maintained.

[0042] Furthermore, by suppressing the release of adsorption between the back side of the substrate and the adsorption stage, while adsorbing the back side of the substrate with the adsorption stage, the entire area of ​​the extended semiconductor device manufacturing wafer with the intermediate layer and the film adhesive is lifted from the substrate side by the adsorption stage and the lifting member, and the surface of the semiconductor wafer is adsorbed and pulled up by the pull-off mechanism for picking up, the picking can be performed more easily.

[0043] The lower limit of the maximum cross-sectional height Rt of the substrate back side 11b is not particularly limited, for example, it can be set to 100nm.

[0044] The surface roughness Ra of the back side 11b of the substrate is preferably 200 nm or less, more preferably 175 nm or less, and especially preferably 150 nm or less. By ensuring that the surface roughness Ra of the back side 11b of the substrate is below the aforementioned upper limit, the adsorption between the substrate and the adsorption stage can be suppressed when the adsorption stage is used to adsorb the back side of the substrate during subsequent expansion. This helps to maintain the cut width.

[0045] The lower limit of the surface roughness Ra of the back side 11b of the substrate is not particularly limited, for example, it can be set to 5nm.

[0046] Generally speaking, the smaller the size of a semiconductor wafer, the larger the ratio of the gap area between adjacent semiconductor wafers to the total area of ​​the wafer used in semiconductor device manufacturing, making it more difficult to use an adsorption stage to adsorb the back side of the substrate.

[0047] Even when using a semiconductor wafer with an area of ​​9 mm2 or less, the semiconductor device manufacturing wafer 101 of this embodiment can still sufficiently suppress the removal of adsorption between the substrate and the adsorption stage.

[0048] It is preferable that the haze of the support sheet is 10 or higher, or that the total light transmittance of the support sheet is 70% or lower. It is even better that the haze of the support sheet is 11 or higher, or that the total light transmittance of the support sheet is 65% or lower. It is even better that the haze of the support sheet is 11.5 or higher, or that the total light transmittance of the support sheet is 63% or lower.

[0049] There is no particular limitation on the upper limit of the haze of the support sheet; for example, it can be set to 50. There is no particular limitation on the lower limit of the total light transmittance of the support sheet; for example, it can be set to 30%.

[0050] As detailed below, a tape-mounting machine is used when attaching a semiconductor device manufacturing wafer to a semiconductor wafer array. At this time, the tape-mounting machine identifies the periphery of the region (non-deposited region) of the first surface 12a of the adhesive layer 12 where the undeposited intermediate layer 13 and the film-like adhesive 14 are located. If the haze of the support sheet is above the aforementioned lower limit or the total light transmittance of the support sheet is below the aforementioned upper limit, the tape-mounting machine can more easily identify the periphery of the non-deposited region. As a result, the semiconductor device manufacturing wafer can be attached to the semiconductor wafer more reliably.

[0051] The intermediate layer 13 and the film adhesive 14 are both circular in shape when viewed from above, and the diameter of the intermediate layer 13 is the same as the diameter of the film adhesive 14. Furthermore, in the semiconductor device manufacturing wafer 101, the intermediate layer 13 and the film adhesive 14 are arranged in such a way that their centers are aligned, in other words, the outer periphery of the intermediate layer 13 and the film adhesive 14 are aligned in the radial direction.

[0052] The areas of the first surface 13a of the intermediate layer 13 and the first surface 14a of the film adhesive 14 are both smaller than the first surface 12a of the adhesive layer 12. Furthermore, the maximum value (i.e., diameter) of the width W13 of the intermediate layer 13 and the maximum value (i.e., diameter) of the width W14 of the film adhesive 14 are both smaller than the maximum value of the width of the adhesive layer 12 and the maximum value of the width of the substrate 11. Therefore, in the semiconductor device manufacturing wafer 101, a portion of the first surface 12a of the adhesive layer 12 is not covered by the intermediate layer 13 and the film adhesive 14. Thus, the area of ​​the first surface 12a of the adhesive layer 12 where the intermediate layer 13 and the film adhesive 14 are not deposited is in direct contact with and deposited with the release film 15. When the release film 15 is removed, this area is exposed (hereinafter, this area is sometimes referred to as the "non-deposited area" in this specification). Furthermore, in the semiconductor device manufacturing wafer 101 equipped with the release film 15, the area of ​​the adhesive layer 12 not covered by the intermediate layer 13 and the film adhesive 14, as shown here, may be an area where the release film 15 is not deposited, or this area may be absent.

[0053] The semiconductor device manufacturing wafer 101, which is in a state where the film adhesive 14 is not cut and is attached to the semiconductor wafer or semiconductor chip using the film adhesive 14, can be fixed by attaching a portion of the non-deposited area of ​​the adhesive layer 12 therein to a jig such as an annular frame for fixing the semiconductor wafer. Therefore, it is unnecessary to separately provide a jig adhesive layer for fixing the semiconductor device manufacturing wafer 101 to the aforementioned jig. Furthermore, since it is unnecessary to provide a jig adhesive layer, the semiconductor device manufacturing wafer 101 can be manufactured cheaply and efficiently.

[0054] Thus, while the semiconductor device manufacturing wafer 101 can achieve advantageous effects by not having a fixture adhesive layer, it can also have a fixture adhesive layer. In this case, the fixture adhesive layer can be provided in the area near the periphery of the surface of one of the layers constituting the semiconductor device manufacturing wafer 101. Examples of such areas include the aforementioned non-depositional area in the first surface 12a of the adhesive layer 12.

[0055] The adhesive layer for the fixture may be of known types, for example, it may be a single-layer structure containing adhesive components, or it may be a multi-layer structure consisting of layers containing adhesive components on two surface layers of a sheet that serves as the core material.

[0056] Furthermore, as described later, when the semiconductor device manufacturing wafer 101 is stretched in a parallel direction relative to the surface of the semiconductor device manufacturing wafer 101 (e.g., the first surface 12a of the adhesive layer 12), that is, when so-called expansion is performed, the semiconductor device manufacturing wafer 101 can be easily expanded by the presence of the aforementioned non-delamination region on the first surface 12a of the adhesive layer 12. In addition, not only can the film adhesive 14 be easily cut, but sometimes the peeling of the intermediate layer 13 and the film adhesive 14 relative to the adhesive layer 12 can also be suppressed.

[0057] In the semiconductor device manufacturing wafer 101, the intermediate layer 13 contains a non-silicone resin with a weight average molecular weight of less than 100,000 as the main component.

[0058] The semiconductor device manufacturing wafer of this embodiment is not limited to those shown in FIG1 and FIG2. Modifications, deletions or additions can be made to the components shown in FIG1 and FIG2 without impairing the effectiveness of the present invention.

[0059] For example, the semiconductor device manufacturing wafer of this embodiment may also have other layers that are not equivalent to any of the substrate, adhesive layer, intermediate layer, film adhesive, release film, or fixture adhesive layer. However, the semiconductor device manufacturing wafer of this embodiment is preferably provided with an adhesive layer in direct contact with the substrate, an intermediate layer in direct contact with the adhesive layer, and a film adhesive in direct contact with the intermediate layer, as shown in FIG1.

[0060] For example, in the semiconductor device manufacturing wafer of this embodiment, the planar shapes of the intermediate layer and the film adhesive may be shapes other than circular, and the planar shapes of the intermediate layer and the film adhesive may be the same or different from each other. Furthermore, it is preferable that the area of ​​the first surface of the intermediate layer and the area of ​​the first surface of the film adhesive are both smaller than the area of ​​the surface of the layer closer to the substrate (e.g., the first surface of the adhesive layer) than the intermediate layer and the film adhesive, and they may be the same or different from each other. In addition, the peripheral positions of the intermediate layer and the film adhesive may be the same or different in these radial directions.

[0061] Next, we will describe in more detail each layer of the semiconductor device manufacturing wafer constituting this embodiment.

[0062] ○Substrate The aforementioned substrate is in sheet or film form. The maximum cross-sectional height Rt of the surface opposite to the side having the adhesive layer (back side of the substrate) is 2000 nm or less, preferably 1800 nm or less, and more preferably 1600 nm or less. The lower limit of the maximum cross-sectional height Rt of the surface opposite to the side having the adhesive layer (back side of the substrate) is not particularly limited, and for example, it can be set to 100 nm.

[0063] The surface roughness Ra of the surface opposite to the adhesive layer in the substrate (back side of the substrate) is preferably 200 nm or less, more preferably 175 nm or less, and especially preferably 150 nm or less. There is no particular limitation on the lower limit of the surface roughness Ra of the surface opposite to the adhesive layer in the substrate (back side of the substrate), for example, it can be set to 5 nm.

[0064] The above-mentioned substrate can also be manufactured, for example, by sandwiching the raw material substrate between two rollers and passing it between the roller surfaces while rotating these rollers. By adjusting the Rt and Ra of the roller surfaces in contact with the raw material substrate, a substrate with the desired Rt and Ra can be manufactured.

[0065] Alternatively, the aforementioned substrate can be manufactured by pressing the raw material substrate against the surface of the roller, i.e., by using a so-called molding method. By adjusting the Rt and Ra of this roller surface, a substrate with a surface having the desired Rt and Ra can be manufactured.

[0066] The constituent material of the aforementioned substrate is preferably a variety of resins. Specifically, examples include polyethylene (low density polyethylene, linear low density polyethylene, high density polyethylene, etc.), polypropylene (PP), polybutene, polybutadiene, polymethylpentene, styrene-ethylene-butene-styrene block copolymer, polyvinyl chloride, vinyl chloride copolymer, polyethylene terephthalate (PET), polybutylene terephthalate (PBT), polyurethane, polyurethane acrylate, polyimide (PI), ionomer resins, ethylene-(meth)acrylic acid copolymers, ethylene-(meth)acrylic acid copolymers, ethylene-(meth)acrylic acid copolymers and ethylene copolymers other than ethylene-(meth)acrylic acid copolymers, polystyrene, polycarbonate, fluoropolymers, hydrogenated, modified, crosslinked or copolymerized resins, etc.

[0067] Furthermore, in this specification, the concept of "(meth)acrylic acid" includes both "acrylic acid" and "methacrylic acid". The same applies to similar terms, for example, the concept of "(meth)acrylate" includes both "acrylate" and "methacrylate", and the concept of "(meth)acrylyl" includes both "acrylyl" and "methacrylyl".

[0068] The resin constituting the substrate may be only one type or two or more types. When there are two or more types, the combination and ratio of these resins can be arbitrarily selected.

[0069] The substrate may consist of one layer (single layer) or multiple layers (two or more). When the substrate consists of multiple layers, these multiple layers may be the same or different from each other, and the combination of these multiple layers is not particularly limited without impairing the effectiveness of the present invention. In this specification, the situation is not limited to the substrate. The phrase "multiple layers may be the same or different from each other" means "all layers may be the same, all layers may be different, or only some layers may be the same." Furthermore, the phrase "multiple layers may be different from each other" means "at least one of the constituent materials and thicknesses of each layer is different from each other."

[0070] The thickness of the substrate can be appropriately selected according to the purpose, preferably from 50μm to 300μm, and more preferably from 60μm to 150μm. By making the substrate thickness above the aforementioned lower limit, the structure of the substrate can be more stable. By making the substrate thickness below the aforementioned upper limit, the film adhesive can be cut more easily during blade cutting and the aforementioned expansion of the wafer for semiconductor device manufacturing. Here, "substrate thickness" means the overall thickness of the substrate. For example, the thickness of a substrate composed of multiple layers means the total thickness of all layers constituting the substrate.

[0071] To improve the adhesion between the substrate and other layers such as the adhesive layer disposed on the substrate, the surface of the substrate may be subjected to surface treatments such as sandblasting, solvent treatment, and embossing; or oxidation treatments such as corona discharge treatment, electron beam irradiation treatment, plasma treatment, ozone / ultraviolet irradiation treatment, flame treatment, chromic acid treatment, and hot air treatment. A primer may also be applied to the surface of the substrate. The substrate may also have an antistatic coating; when stored overlapping with the wafer, it may prevent the substrate from adhering to other sheets or to the adsorption stage layer.

[0072] In addition to the aforementioned main constituent materials such as resin, the substrate may also contain various known additives such as fillers, colorants, antistatic agents, antioxidants, organic lubricants, catalysts, and softeners (plasticizers).

[0073] It is preferable that the haze of the support sheet composed of the substrate and the adhesive layer is 10 or higher, or that the total light transmittance of the support sheet is 70% or lower.

[0074] The substrate may also contain one or more of the group consisting of fillers and colorants. Examples of fillers and colorants that may be contained in the substrate include those used in the raw materials of the adhesive composition described later.

[0075] The substrate can be used to adjust the haze of the support sheet to a desired value by containing a filler. The substrate can be used to adjust the total light transmittance of the support sheet to a desired value by containing a colorant.

[0076] The optical properties of the substrate are not particularly limited without impairing the effectiveness of the present invention. The substrate may also allow laser light or energy lines to pass through, for example.

[0077] The substrate can be manufactured by known methods. For example, a substrate containing resin (using resin as a constituent material) can be manufactured by molding the aforementioned resin or a resin composition containing the aforementioned resin.

[0078] ○ Adhesive Layer The aforementioned adhesive layer may be in sheet or film form and contains an adhesive. The adhesive layer may be formed using an adhesive composition containing the aforementioned adhesive. For example, an adhesive composition may be applied to the surface to which the adhesive layer is to be formed, and dried as necessary, thereby forming an adhesive layer at the target location.

[0079] In the adhesive layer, the total content of one or more of the adhesive layer’s constituent components described below is not more than 100% by mass relative to the total mass of the adhesive layer. Similarly, in the adhesive composition, the total content of one or more of the adhesive composition’s constituent components described below is not more than 100% by mass relative to the total mass of the adhesive composition.

[0080] It is preferable that the haze of the support sheet composed of the substrate and the adhesive layer is 10 or higher, or that the total light transmittance of the support sheet is 70% or lower.

[0081] The application of the adhesive composition can be carried out by known methods, such as using an air knife coating machine, a doctor blade coating machine, a bar coating machine, a gravure coating machine, a roller coating machine, a roller knife coating machine, a curtain coating machine, a mold coating machine, a knife coating machine, a screen coating machine, a Meyer bar coating machine, a touch coating machine, etc.

[0082] There are no particular limitations on the drying conditions of the adhesive composition. When the adhesive composition contains the solvent described later, it is preferable to dry it by heating. In this case, it is preferable to dry it at 70°C to 130°C for 10 seconds to 5 minutes.

[0083] Examples of adhesives mentioned above include: acrylic resin, urethane resin, rubber resin, polysiloxane resin, epoxy resin, polyethylene ether, polycarbonate, ester resin, etc., with acrylic resin being preferred.

[0084] Furthermore, in this invention, the concept of "adhesive resin" includes both resins that have adhesive properties and resins that have adhesive properties. For example, the aforementioned adhesive resins include not only resins that have adhesive properties on their own, but also resins that exhibit adhesive properties when used in combination with other components such as additives, or resins that exhibit adhesive properties when triggered by the presence of heat or water.

[0085] The adhesive layer can be either curable or non-curable, for example, it can be either energy line curable or non-energy line curable. The properties of the curable adhesive layer before and after curing can be easily adjusted.

[0086] In this specification, the term "energy line" refers to an electromagnetic wave or charged particle beam possessing energy quanta. Examples of such energy lines include ultraviolet light, radiation, and electron beams. Ultraviolet light can be irradiated by using high-pressure mercury lamps, fusion lamps, xenon lamps, black light lamps, or LED (Light Emitting Diode) lamps as ultraviolet light sources. Electron beams can be irradiated by irradiating electron beams generated by electron beam accelerators, etc. Furthermore, in this invention, the term "energy line hardening property" refers to the property of hardening by irradiation of an energy line, and the term "non-energy line hardening property" refers to the property of not hardening even when irradiated with an energy line.

[0087] The adhesive layer may be composed of one layer (single layer) or multiple layers of two or more layers. When it is composed of multiple layers, these multiple layers may be the same or different from each other, and there is no particular limitation on the combination of these multiple layers.

[0088] The thickness of the adhesive layer is preferably from 1 μm to 100 μm, more preferably from 1 μm to 60 μm, and especially preferably from 1 μm to 30 μm. Here, "thickness of the adhesive layer" means the overall thickness of the adhesive layer. For example, the thickness of an adhesive layer composed of multiple layers means the total thickness of all the layers that make up the adhesive layer.

[0089] The optical properties of the adhesive layer are not particularly limited as long as they do not impair the effectiveness of the present invention. For example, the adhesive layer may also be one that allows energy lines to pass through. Next, we will describe the aforementioned adhesive composition.

[0090] [Adhesive Composition] When the adhesive layer is energy-line curable, the adhesive composition containing the energy-line curable adhesive, that is, the energy-line curable adhesive composition, may include the following adhesive compositions: adhesive composition (I-1), which contains a non-energy-line curable adhesive resin (I-1a) (hereinafter, sometimes simply referred to as "adhesive resin (I-1a)") and an energy-line curable compound; adhesive composition (I-2), which contains an energy-line curable adhesive resin (I-2a) with unsaturated groups introduced into the side chain of the non-energy-line curable adhesive resin (I-1a) (hereinafter, sometimes simply referred to as "adhesive resin (I-2a)"); adhesive composition (I-3), which contains the aforementioned adhesive resin (I-2a) and an energy-line curable compound.

[0091] [Adhesive composition (I-1)] The aforementioned adhesive composition (I-1) contains, as described above, a non-energy-line curable adhesive resin (I-1a) and an energy-line curable compound.

[0092] [Adhesive Resin (I-1a)] The aforementioned adhesive resin (I-1a) is preferably an acrylic resin. Examples of the aforementioned acrylic resin include, for instance, acrylic polymers having at least one constituent unit derived from (meth)acrylate. The aforementioned acrylic resin may have only one type of constituent unit or more than two types. When there are two or more types, the combination and ratio of these constituent units can be arbitrarily selected.

[0093] The adhesive composition (I-1) may contain only one type of adhesive resin (I-1a) or two or more types. In the case of two or more types, the combination and ratio of adhesive resins (I-1a) can be arbitrarily selected.

[0094] In the adhesive composition (I-1), the content of adhesive resin (I-1a) relative to the total mass of the adhesive composition (I-1) is preferably 5% to 99% by mass, more preferably 10% to 95% by mass, and especially preferably 15% to 90% by mass.

[0095] [Energy Line Curing Compound] The energy line curing compound contained in the adhesive composition (I-1) can be a monomer or oligomer having an energy line polymerizable unsaturated group and being curable by irradiation with an energy line. Examples of monomers in the energy line curing compound include: trimethylolpropane tri(meth)acrylate, pentaerythritol (meth)acrylate, pentaerythritol tetra(meth)acrylate, dipentaerythritol hexa(meth)acrylate, 1,4-butanediol di(meth)acrylate, 1,6-hexanediol (meth)acrylate, and other poly(meth)acrylates; (meth)acrylate aminocarbamates; polyester (meth)acrylates; polyether (meth)acrylates; epoxy (meth)acrylates, etc. Examples of oligomers in the energy line curing compound include oligomers formed by polymerizing the monomers exemplified above. In terms of having a relatively large molecular weight and being less likely to reduce the storage elastic modulus of the adhesive layer, energy-line curing compounds are preferably (meth)acrylate or (meth)acrylate oligomers.

[0096] The adhesive composition (I-1) may contain only one or more energy-line hardening compounds. In the case of two or more, the combination and ratio of these energy-line hardening compounds may be arbitrarily selected.

[0097] In the adhesive composition (I-1), the content of the aforementioned energy line hardening compound relative to the total mass of the adhesive composition (I-1) is preferably from 1% to 95% by mass, more preferably from 5% to 90% by mass, and especially preferably from 10% to 85% by mass.

[0098] The adhesive composition (I-1) is preferably composed of one or more of a group consisting of fillers and colorants. The adhesive composition (I-1) contains fillers that allow the haze of the support sheet to be adjusted to a desired value. The adhesive composition (I-1) contains colorants that allow the total light transmittance of the support sheet to be adjusted to a desired value.

[0099] [Filling Material] When using a filler, examples of well-known fillers include organic fillers and inorganic fillers. Organic fillers are preferred.

[0100] There are no particular restrictions on the use of organic fillers, and known organic fillers can be used. Examples of organic fillers include styrene-based particles, butadiene-based particles, acrylic-based particles, and other rubber particles, polysiloxane resin particles, polysiloxane rubber particles, and other polysiloxane composite particles. Among these, polysiloxane composite particles are preferred, and polysiloxane resin particles are even more preferred.

[0101] There are no particular restrictions on the inorganic filler material, and known inorganic fillers can be used. Examples of inorganic fillers include: powders of silicon oxide, alumina, talc, calcium carbonate, titanium dioxide, iron oxide, silicon carbide, boron nitride, etc.; beads formed by spheroidizing these inorganic fillers; surface-modified products of these inorganic fillers; single-crystal fibers of these inorganic fillers; glass fibers, etc. Among these, silicon oxide or alumina is preferred, with silicon oxide being more preferred.

[0102] The adhesive composition (I-1) may contain only one type of filler or two or more types of fillers. In the case of two or more types of fillers, the combination and ratio of fillers can be arbitrarily selected.

[0103] When using filler, the filler content in the adhesive composition (I-1) is preferably 0.01 to 50 parts by weight relative to 100 parts by weight of adhesive resin (I-1a), more preferably 0.1 to 20 parts by weight, and especially preferably 0.3 to 15 parts by weight.

[0104] [Coloring Agents] Examples of coloring agents include known substances such as inorganic pigments, organic pigments, and organic dyes. Inorganic pigments are preferred as coloring agents.

[0105] Examples of the aforementioned organic pigments and organic dyes include: ammonium pigments, cyanine pigments, quinoline pigments, croconium pigments, squalilium pigments, azurite pigments, polymethyl pigments, naphthoquinone pigments, pyranonium pigments, phthalocyanine pigments, naphthylphthalocyanine pigments, naphthyllactone pigments, azo pigments, condensed azo pigments, indigo pigments, and perinone pigments. Pigments, including perylene pigments, dioxazine pigments, quinacridone pigments, isoindolineone pigments, quinophthalone pigments, pyrrole pigments, thioindigo pigments, metal fusion pigments (metal fusion salt dyes), dithiol metal fusion pigments, indophenol pigments, triallylmethane pigments, anthraquinone pigments, naphthol pigments, methylene azo pigments, benzimidazole pigments, pinantrone pigments, and threne pigments, etc.

[0106] Examples of the aforementioned inorganic pigments include: carbon black, cobalt-based pigments, iron-based pigments, chromium-based pigments, titanium-based pigments, vanadium-based pigments, zirconium-based pigments, molybdenum-based pigments, ruthenium-based pigments, platinum-based pigments, ITO (Indium Tin Oxide) pigments, and ATO (Antimony Tin Oxide) pigments. Among these, carbon black is preferred.

[0107] The adhesive composition may contain only one type of colorant or two or more types. In the case of two or more types, the combination and ratio of these colorants can be arbitrarily selected.

[0108] When using a colorant, the content of the colorant in the adhesive composition (I-1) is preferably 0.01 to 50 parts by weight relative to 100 parts by weight of the adhesive resin (I-1a), more preferably 0.1 to 20 parts by weight, and especially preferably 0.3 to 15 parts by weight.

[0109] [Crosslinking agent] When the adhesive resin (I-1a) uses an acrylic polymer that has, in addition to having a constituent unit derived from an alkyl methacrylate, a constituent unit derived from a monomer containing a functional group, the adhesive composition (I-1) preferably contains a crosslinking agent.

[0110] The aforementioned crosslinking agent reacts with the aforementioned functional groups to crosslink the adhesive resin (I-1a) with each other. Examples of crosslinking agents include: isocyanate-based crosslinking agents (crosslinking agents having isocyanate groups) such as toluene diisocyanate, hexamethylene diisocyanate, phenyl diisocyanate, and adducts of these diisocyanates; epoxy-based crosslinking agents (crosslinking agents having glycidyl groups) such as ethylene glycol glycidyl ether; aziridine-based crosslinking agents (crosslinking agents having aziridine groups) such as hexa[1-(2-methyl)-aziridinyl]triphosphatidyltriazine; metal chelate-based crosslinking agents (crosslinking agents having metal chelate structures) such as aluminum chelates; and isocyanurate-based crosslinking agents (crosslinking agents having isocyanuric acid skeletons). In terms of improving the cohesiveness of the adhesive and thus the adhesion of the adhesive layer, and in terms of ease of acquisition, isocyanate-based crosslinking agents are preferred.

[0111] The crosslinking agent contained in the adhesive composition (I-1) may be only one type or two or more types. In the case of two or more types, the combination and ratio of these crosslinking agents can be arbitrarily selected.

[0112] When a crosslinking agent is used, in the aforementioned adhesive composition (I-1), the content of the crosslinking agent relative to the content of the adhesive resin (I-1a) is preferably 0.01 parts by mass to 50 parts by mass, more preferably 0.1 parts by mass to 20 parts by mass, and especially preferably 0.3 parts by mass to 15 parts by mass.

[0113] [Photopolymerization initiator] The adhesive composition (I-1) may further contain a photopolymerization initiator. The adhesive composition (I-1) containing a photopolymerization initiator can undergo a sufficient curing reaction even when irradiated with relatively low-energy lines such as ultraviolet light.

[0114] Examples of photopolymerization initiators include: benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin isobutyl ether, benzoin benzoic acid, methyl benzoate, benzoin dimethyl ketal, and other benzoin compounds; acetophenone, 2-hydroxy-2-methyl-1-phenyl-propane-1-one, 2,2-dimethoxy-1,2-diphenylethane-1-one, and other acetophenone compounds; bis(2,4,6-trimethylbenzoyl)phenylphosphine oxide, 2,4,6-trimethylbenzoyldiphenyl Phosphine oxide and other acetylated phosphine oxide compounds; benzyl phenyl sulfide, tetramethylthiuram monosulfide and other sulfide compounds; α-keto alcohol compounds such as 1-hydroxycyclohexylphenyl ketone; azo compounds such as azobisisobutyronitrile; titanium cadmium and other titanium cadmium compounds; thioxanthone and other thioxanthone compounds; peroxide compounds; diacetyl and other diketone compounds; benzohexane; dibenzohexane; benzophenone; 2,4-diethylthioxanthone; 1,2-diphenylmethane; 2-hydroxy-2-methyl-1-[4-(1-methylvinyl)phenyl]propanone; 2-chloroanthraquinone, etc. In addition, quinone compounds such as 1-chloroanthraquinone; photosensitizers such as amines, etc., can also be used as the aforementioned photopolymerization initiators.

[0115] The photopolymerization initiator contained in the adhesive composition (I-1) may be only one type or two or more types. In the case of two or more types, the combination and ratio of these photopolymerization initiators may be arbitrarily selected.

[0116] When using a photopolymerization initiator, the content of the photopolymerization initiator in the adhesive composition (I-1) is preferably 0.01 to 20 parts by mass relative to 100 parts by mass of the aforementioned energy line hardening compound, more preferably 0.03 to 10 parts by mass, and especially preferably 0.05 to 5 parts by mass.

[0117] [Other Additives] The adhesive composition (I-1) may also contain other additives that are not equivalent to any of the above-mentioned components, to the extent that the effects of the present invention are not impaired. Examples of such other additives include: antistatic agents, antioxidants, softeners (plasticizers), fillers, rust inhibitors, colorants (pigments, dyes), sensitizers, adhesion promoters, reaction delayers, crosslinking promoters (catalysts), and other known additives.

[0118] The term "reaction delay agent" refers, for example, to a component used to inhibit unintended cross-linking reactions that occur in the stored adhesive composition (I-1) due to the action of a catalyst incorporated into the adhesive composition (I-1). Examples of reaction delay agents include compounds that form chelate complexes by chelating the catalyst; more specifically, compounds having two or more carbonyl groups (-C(=O)-) in one molecule can be listed.

[0119] The adhesive composition (I-1) may contain only one or more other additives. In the case of two or more additives, the combination and ratio of these other additives may be arbitrarily selected.

[0120] The content of other additives in the adhesive composition (I-1) is not particularly limited, and can be selected appropriately according to the type of other additives.

[0121] [Soluble] The adhesive composition (I-1) may also contain a solvent. By containing a solvent, the adhesive composition (I-1) can improve its applicability to the target surface.

[0122] Organic solvents are preferred as mentioned above.

[0123] [Adhesive composition (I-2)] The aforementioned adhesive composition (I-2) is an adhesive resin (I-2a) with unsaturated groups introduced into the side chain of the non-energy-line curable adhesive resin (I-1a) as described above.

[0124] [Adhesive resin (I-2a)] The aforementioned adhesive resin (I-2a) is obtained, for example, by reacting the functional groups in the adhesive resin (I-1a) with a compound containing unsaturated groups that have energy-line polymerizable unsaturated groups.

[0125] The aforementioned compound containing an unsaturated group is a compound having the following groups: in addition to having the aforementioned energy-line polymerizable unsaturated group, it further has a group that can bond with the adhesive resin (I-1a) by reacting with the functional groups in the adhesive resin (I-1a). Examples of the aforementioned energy-line polymerizable unsaturated group include: (meth)acrylyl, vinyl (ethylene), allyl (2-propenyl), etc., with (meth)acrylyl being preferred. Examples of groups that can bond with the functional groups in the adhesive resin (I-1a) include: isocyanate groups and glycidyl groups that can bond with hydroxyl or amino groups, and hydroxyl and amino groups that can bond with carboxyl or epoxy groups, etc.

[0126] Examples of the aforementioned compounds containing unsaturated groups include: (meth)acryloxyethyl isocyanate, (meth)acrylyl isocyanate, (meth)acrylate glycidyl ester, etc.

[0127] The adhesive composition (I-2) may contain only one type of adhesive resin (I-2a) or two or more types. When there are two or more types, the combination and ratio of these adhesive resins (I-2a) can be arbitrarily selected.

[0128] In the adhesive composition (I-2), the content of adhesive resin (I-2a) relative to the total mass of the adhesive composition (I-2) is preferably 5% to 99% by mass, more preferably 10% to 95% by mass, and especially preferably 10% to 90% by mass.

[0129] The adhesive composition (I-2) is preferably composed of one or more of a group consisting of a filler and a colorant. The adhesive composition (I-2) contains a filler, which allows the haze of the support sheet to be adjusted to a desired value. The adhesive composition (I-2) contains a colorant, which allows the total light transmittance of the support sheet to be adjusted to a desired value.

[0130] [Filling material] The adhesive composition (I-2) may further contain a filler material.

[0131] The adhesive composition (I-2) may contain fillers that are the same as those in the adhesive composition (I-1). The adhesive composition may contain only one type of filler or two or more types of fillers. If there are two or more types, the combination and ratio of these fillers can be arbitrarily selected.

[0132] When using filler, the filler content in the adhesive composition (I-2) is preferably 0.01 to 50 parts by weight relative to 100 parts by weight of adhesive resin (I-2a), more preferably 0.1 to 20 parts by weight, and especially preferably 0.3 to 15 parts by weight.

[0133] [Coloring agent] The adhesive composition (I-2) may further contain a coloring agent.

[0134] The adhesive composition (I-2) may contain colorants that are the same as those in the adhesive composition (I-1). The adhesive composition may contain only one type of colorant or two or more types of colorants. In the case of two or more types, the combination and ratio of these colorants can be arbitrarily selected.

[0135] When using a colorant, the colorant content in the adhesive composition (I-2) is preferably 0.01 to 50 parts by weight relative to 100 parts by weight of the adhesive resin (I-2a), more preferably 0.1 to 20 parts by weight, and especially preferably 0.3 to 15 parts by weight.

[0136] [Crosslinking agent] Adhesive resin (I-2a) For example, similar to adhesive resin (I-1a), when using the aforementioned acrylic polymer having constituent units derived from monomers containing functional groups, the adhesive composition (I-2) may further contain a crosslinking agent.

[0137] As the aforementioned crosslinking agent in the adhesive composition (I-2), an example of a crosslinking agent that is the same as the crosslinking agent in the adhesive composition (I-1) can be cited. The crosslinking agent contained in the adhesive composition (I-2) may be only one type or two or more types. When there are two or more types, the combination and ratio of these crosslinking agents can be arbitrarily selected.

[0138] When a crosslinking agent is used, in the aforementioned adhesive composition (I-2), the content of the crosslinking agent relative to the content of the adhesive resin (I-2a) is preferably 0.01 parts to 50 parts by weight, more preferably 0.1 parts to 20 parts by weight, and especially preferably 0.3 parts to 15 parts by weight.

[0139] [Photopolymerization initiator] The adhesive composition (I-2) may further contain a photopolymerization initiator. The adhesive composition (I-2) containing the photopolymerization initiator can still undergo a sufficient hardening reaction even when irradiated with relatively low-energy lines such as ultraviolet light.

[0140] The aforementioned photopolymerization initiator in the adhesive composition (I-2) may be the same as the photopolymerization initiator in the adhesive composition (I-1). The adhesive composition (I-2) may contain only one or more photopolymerization initiators. When there are two or more, the combination and ratio of these photopolymerization initiators can be arbitrarily selected.

[0141] When using a photopolymerization initiator, the content of the photopolymerization initiator in the adhesive composition (I-2) is preferably 0.01 to 20 parts by weight relative to 100 parts by weight of the adhesive resin (I-2a), more preferably 0.03 to 10 parts by weight, and especially preferably 0.05 to 5 parts by weight.

[0142] [Other Additives, Solvents] The adhesive composition (I-2) may contain other additives that are not equivalent to any of the above-mentioned components, without impairing the effectiveness of the present invention. Furthermore, the adhesive composition (I-2) may also contain solvents for the same purpose as in the case of the adhesive composition (I-1). Examples of the other additives and solvents mentioned above in the adhesive composition (I-2) are those identical to those in the adhesive composition (I-1). The other additives and solvents contained in the adhesive composition (I-2) may be only one type or two or more types; in the case of two or more types, the combination and ratio of these other additives and solvents can be arbitrarily selected. The content of the other additives and solvents in the adhesive composition (I-2) is not particularly limited, as long as they are appropriately selected according to their type.

[0143] [Adhesive composition (I-3)] The aforementioned adhesive composition (I-3) contains the aforementioned adhesive resin (I-2a) and energy line hardening compound as described above.

[0144] In the adhesive composition (I-3), the content of adhesive resin (I-2a) relative to the total mass of the adhesive composition (I-3) is preferably 5% to 99% by mass, more preferably 10% to 95% by mass, and especially preferably 15% to 90% by mass.

[0145] [Energy Line Hardening Compound] The energy line hardening compound contained in the adhesive composition (I-3) can be exemplified as: monomers and oligomers having energy line polymerizable unsaturated groups and capable of being hardened by irradiation with energy lines; compounds identical to those contained in the adhesive composition (I-1) can be included. The adhesive composition (I-3) may contain only one or more of the aforementioned energy line hardening compounds. When there are two or more, the combination and ratio of these energy line hardening compounds can be arbitrarily selected.

[0146] The adhesive composition (I-3) is preferably composed of one or more of a group consisting of a filler and a colorant. The adhesive composition (I-3) contains a filler, which allows the haze of the support sheet to be adjusted to a desired value. The adhesive composition (I-3) contains a colorant, which allows the total light transmittance of the support sheet to be adjusted to a desired value.

[0147] [Filling material] The adhesive composition (I-3) may also contain filler material.

[0148] The adhesive composition (I-3) may contain fillers that are the same as those in the adhesive composition (I-1). The adhesive composition (I-3) may contain only one type of filler or two or more types of fillers. If there are two or more types, the combination and ratio of these fillers can be arbitrarily selected.

[0149] When using filler, the filler content in the adhesive composition (I-3) is preferably 0.01 to 50 parts by weight relative to 100 parts by weight of adhesive resin (I-2a), more preferably 0.1 to 20 parts by weight, and especially preferably 0.3 to 15 parts by weight.

[0150] [Coloring agent] The adhesive composition (I-3) may further contain a coloring agent.

[0151] The adhesive composition (I-3) may contain colorants that are the same as those in the adhesive composition (I-1). The adhesive composition (I-3) may contain only one type of colorant or two or more types of colorants. In the case of two or more types, the combination and ratio of these colorants can be arbitrarily selected.

[0152] When using a colorant, the colorant content in the adhesive composition (I-3) is preferably 0.01 to 50 parts by weight relative to 100 parts by weight of the adhesive resin (I-2a), more preferably 0.1 to 20 parts by weight, and especially preferably 0.3 to 15 parts by weight.

[0153] In the aforementioned adhesive composition (I-3), the content of the aforementioned energy line hardening compound relative to the content of adhesive resin (I-2a) is preferably 0.01 parts by mass to 300 parts by mass per 100 parts by mass, more preferably 0.03 parts by mass to 200 parts by mass, and especially preferably 0.05 parts by mass to 100 parts by mass.

[0154] [Photopolymerization initiator] The adhesive composition (I-3) may further contain a photopolymerization initiator. The adhesive composition (I-3) containing the photopolymerization initiator can still undergo a sufficient hardening reaction even when irradiated with relatively low-energy lines such as ultraviolet light.

[0155] The aforementioned photopolymerization initiator in the adhesive composition (I-3) may be the same as the photopolymerization initiator in the adhesive composition (I-1). The adhesive composition (I-3) may contain only one or more photopolymerization initiators. When there are two or more, the combination and ratio of these photopolymerization initiators can be arbitrarily selected.

[0156] When using a photopolymerization initiator, the content of the photopolymerization initiator in the adhesive composition (I-3) is preferably 0.01 to 20 parts by mass relative to 100 parts by mass of the total content of the adhesive resin (I-2a) and the aforementioned energy line hardening compound, more preferably 0.03 to 10 parts by mass, and especially preferably 0.05 to 5 parts by mass.

[0157] [Other Additives, Solvents] The adhesive composition (I-3) may contain other additives that are not equivalent to any of the above-mentioned components, without impairing the effectiveness of the present invention. Furthermore, the adhesive composition (I-3) may also contain solvents for the same purpose as in the case of the adhesive composition (I-1). Examples of the other additives and solvents mentioned above in the adhesive composition (I-3) are those identical to those in the adhesive composition (I-1). The other additives and solvents contained in the adhesive composition (I-3) may be only one type or two or more types; in the case of two or more types, the combination and ratio of these other additives and solvents can be arbitrarily selected. The content of the other additives and solvents in the adhesive composition (I-3) is not particularly limited, as long as they are appropriately selected according to their type.

[0158] [Adhesive compositions other than adhesive compositions (I-1) to adhesive compositions (I-3)] So far, adhesive compositions (I-1), adhesive compositions (I-2) and adhesive compositions (I-3) have been mainly described, but the components described as the constituents of these can also be used in all adhesive compositions other than these three adhesive compositions (in this specification, they are referred to as "adhesive compositions other than adhesive compositions (I-1) to adhesive compositions (I-3)").

[0159] Adhesive compositions other than those in I-1 to I-3 may include, in addition to those that are energy-line curable, those that are not energy-line curable. Examples of non-energy-line curable adhesive compositions include adhesive compositions (I-4) containing non-energy-line curable adhesive resins such as acrylic resin, urethane resin, rubber resin, polysiloxane resin, epoxy resin, polyethylene ether, polycarbonate, and ester resin, preferably containing acrylic resin.

[0160] Adhesive compositions other than adhesive composition (I-1) to adhesive composition (I-3) preferably contain one or more crosslinking agents, and the content of the crosslinking agent may be set to be the same as that of the adhesive composition (I-1) and the like.

[0161] [Adhesive composition (I-4)] As a preferred adhesive composition (I-4), an adhesive composition containing the aforementioned adhesive resin (I-1a) and crosslinking agent can be cited as an example.

[0162] [Adhesive resin (I-1a)] As the adhesive resin (I-1a) in adhesive composition (I-4), examples may be the same as the adhesive resin (I-1a) in adhesive composition (I-1). The adhesive resin (I-1a) contained in adhesive composition (I-4) may be only one type or two or more types. When there are two or more types, the combination and ratio of these adhesive resins (I-1a) can be arbitrarily selected.

[0163] In the adhesive composition (I-4), the content of adhesive resin (I-1a) relative to the total mass of the adhesive composition (I-4) is preferably 5% to 99% by mass, more preferably 10% to 95% by mass, and especially preferably 15% to 90% by mass.

[0164] The adhesive composition (I-4) is preferably composed of one or more of a group consisting of a filler and a colorant. The adhesive composition (I-4) contains a filler, which allows the haze of the support sheet to be adjusted to a desired value. The adhesive composition (I-4) contains a colorant, which allows the total light transmittance of the support sheet to be adjusted to a desired value.

[0165] [Filling material] The adhesive composition (I-4) may also contain filler material.

[0166] The adhesive composition (I-4) may contain fillers that are the same as those in the adhesive composition (I-1). The adhesive composition may contain only one type of filler or two or more types of fillers. If there are two or more types, the combination and ratio of these fillers can be arbitrarily selected.

[0167] When using filler, the filler content in the adhesive composition (I-4) is preferably 0.01 to 50 parts by weight relative to 100 parts by weight of adhesive resin (I-1a), more preferably 0.1 to 20 parts by weight, and especially preferably 0.3 to 15 parts by weight.

[0168] [Coloring agent] The adhesive composition (I-4) may further contain a coloring agent.

[0169] The adhesive composition (I-4) may contain colorants that are the same as those in the adhesive composition (I-1). The adhesive composition may contain only one type of colorant or two or more types of colorants. In the case of two or more types, the combination and ratio of these colorants can be arbitrarily selected.

[0170] When using a colorant, the colorant content in the adhesive composition (I-4) is preferably 0.01 to 50 parts by weight relative to 100 parts by weight of the adhesive resin (I-1a), more preferably 0.1 to 20 parts by weight, and especially preferably 0.3 to 15 parts by weight.

[0171] [Crosslinking agent] When the aforementioned acrylic polymer is used as an adhesive resin (I-1a) in addition to having constituent units derived from (meth)acrylate alkyl esters, it further has constituent units derived from monomers containing functional groups, the adhesive composition (I-4) preferably further contains a crosslinking agent.

[0172] As a crosslinking agent in adhesive composition (I-4), the same crosslinking agent as that in adhesive composition (I-1) can be cited. The crosslinking agent contained in adhesive composition (I-4) may be only one type or two or more types. When there are two or more types, the combination and ratio of these crosslinking agents can be arbitrarily selected.

[0173] In the aforementioned adhesive composition (I-4), the content of crosslinking agent relative to the content of adhesive resin (I-1a) is preferably 0.01 parts by weight to 50 parts by weight, more preferably 0.1 parts by weight to 25 parts by weight, and even more preferably 0.1 parts by weight to 10 parts by weight.

[0174] [Other Additives, Solvents] The adhesive composition (I-4) may contain other additives that are not equivalent to any of the above-mentioned components, without impairing the effectiveness of the present invention. Furthermore, the adhesive composition (I-4) may also contain solvents for the same purpose as in the case of the adhesive composition (I-1). Examples of the other additives and solvents mentioned above in the adhesive composition (I-4) are those identical to those in the adhesive composition (I-1). The other additives and solvents contained in the adhesive composition (I-4) may be only one type or two or more types; in the case of two or more types, the combination and ratio of these other additives and solvents can be arbitrarily selected. The content of the other additives and solvents in the adhesive composition (I-4) is not particularly limited, as long as they are appropriately selected according to their type.

[0175] [Method for Manufacturing Adhesive Composition] Adhesive compositions other than those from I-1 to I-3, such as adhesive compositions (I-1) to adhesive composition (I-3) or adhesive composition (I-4), can be obtained by formulating the aforementioned adhesives and, as needed, adding components other than the aforementioned adhesives to form the adhesive composition. There is no particular limitation on the order of addition when formulating the components, and two or more components may be added simultaneously. When using a solvent, the solvent may be mixed with any formulating component other than the solvent and the formulating component may be pre-diluted before use, or the solvent may be mixed with these formulating components without pre-diluting any formulating component other than the solvent. There are no particular limitations on the method of mixing the ingredients during preparation; any suitable method may be selected from the following well-known methods: mixing by rotating a stir bar or stirring blade; mixing using a mixer; mixing by applying ultrasound, etc. Regarding the temperature and time for adding and mixing the ingredients, there are no particular limitations as long as the ingredients are not degraded; appropriate adjustments can be made, with a preferred temperature of 15°C to 30°C.

[0176] ○ Intermediate layer, composition for forming intermediate layer The aforementioned intermediate layer is in sheet or film form and contains the aforementioned non-silicone resin as the main component. The intermediate layer may contain only non-silicone resin (composed of non-silicone resin), or it may contain non-silicone resin and components other than non-silicone resin.

[0177] The intermediate layer can be formed, for example, using an intermediate layer forming composition containing the aforementioned non-silicone resin. For example, the intermediate layer can be formed on the target area by applying the aforementioned intermediate layer forming composition to the surface to which the intermediate layer is to be formed, and drying it as necessary.

[0178] In the intermediate layer, the total content of one or more of the following ingredients in the intermediate layer is not more than 100% by mass relative to the total mass of the intermediate layer. Similarly, in the composition for forming the intermediate layer, the total content of one or more of the following ingredients in the composition for forming the intermediate layer is not more than 100% by mass relative to the total mass of the composition for forming the intermediate layer.

[0179] The application of the intermediate layer composition can be carried out in the same way as the application of the adhesive composition described above.

[0180] There are no particular limitations on the drying conditions of the composition for forming the intermediate layer. When the composition for forming the intermediate layer contains the solvent described later, it is preferable to dry it by heating. In this case, it is preferable to dry it at 60°C to 130°C for 1 to 6 minutes.

[0181] The weight average molecular weight of the aforementioned non-silicone resin is 100,000 or less. Based on the viewpoint of further improving the dicing suitability of the aforementioned semiconductor wafers for manufacturing semiconductor devices, the weight average molecular weight of the aforementioned non-silicone resin may be, for example, any one of 80,000 or less, 60,000 or less, or 40,000 or less.

[0182] There is no particular limitation on the lower limit of the weight average molecular weight of the aforementioned non-silicone resins. For example, non-silicone resins with a weight average molecular weight of 5,000 or above are easier to obtain.

[0183] The weight-average molecular weight of the aforementioned non-silicone resin can be appropriately adjusted within a range set by arbitrarily combining the aforementioned lower limit and any upper limit. For example, in one embodiment, the aforementioned weight-average molecular weight may be any of 5,000 to 100,000, 5,000 to 80,000, 5,000 to 60,000, and 5,000 to 40,000.

[0184] In this embodiment, the phrase "the intermediate layer contains a non-silicone resin with a weight average molecular weight of 100,000 or less as a main component" means that "the intermediate layer contains the aforementioned non-silicone resin in an amount sufficient to fully realize the effects achieved by containing the non-silicone resin with a weight average molecular weight of 100,000 or less." From this perspective, the ratio of the aforementioned non-silicone resin content to the total mass of the intermediate layer (in other words, the ratio of the aforementioned non-silicone resin content to the total content of all components other than the solvent in the intermediate layer forming composition) is preferably 80% by mass or more, more preferably 90% by mass or more, and for example, it can be any one of 95% by mass or more, 97% by mass or more, and 99% by mass or more. On the other hand, the aforementioned ratio is 100% by mass or less.

[0185] The aforementioned non-silicone resins with a weight average molecular weight of 100,000 or less are not particularly limited as long as they do not contain silicon atoms as constituent atoms and are resin components with a weight average molecular weight of 100,000 or less. The aforementioned non-silicone resins may be, for example, either polar resins with polar groups or non-polar resins without polar groups. For example, polar resins are preferred because they have high solubility in the aforementioned intermediate layer forming composition, and thus higher coating suitability of the aforementioned intermediate layer forming composition.

[0186] Unless otherwise specified in this specification, "non-silicone resin" means non-silicone resin with a weight average molecular weight of 100,000 or less.

[0187] The aforementioned non-silicone resin may be a homopolymer of a polymer of one monomer (in other words, having only one constituent unit) or a copolymer of polymers of two or more monomers (in other words, having two or more constituent units).

[0188] Examples of the aforementioned polar groups include carbonyloxy group (-C(=O)-O-) and oxycarbonyl group (-OC(=O)-).

[0189] The aforementioned polar resin may have only a constituent unit with a polar group, or it may have both a constituent unit with a polar group and a constituent unit without a polar group.

[0190] Examples of the aforementioned constituent units with polar groups include constituent units derived from vinyl acetate. Examples of the aforementioned constituent units without polar groups include constituent units derived from ethylene.

[0191] In the aforementioned polar resin, the ratio of the mass of the constituent unit with polar groups to the total mass of all constituent units is preferably 5% to 70% by mass, for example, any one of 7.5% to 55% by mass and 10% to 40% by mass. In other words, in the aforementioned polar resin, the ratio of the mass of the constituent unit without polar groups to the total mass of all constituent units is preferably 30% to 95% by mass, for example, any one of 45% to 92.5% by mass and 60% to 90% by mass. By making the mass ratio of the constituent unit with polar groups above the aforementioned lower limit, the properties of the aforementioned polar resin due to the presence of polar groups are more pronounced. By making the mass ratio of the constituent unit with polar groups below the aforementioned upper limit, the aforementioned polar resin can more appropriately possess the properties produced by the absence of polar groups.

[0192] Examples of the aforementioned polar resins include ethylene-vinyl acetate copolymers. Among these, a preferred polar resin is a polar resin in which the mass of the constituent units derived from vinyl acetate in the ethylene-vinyl acetate copolymer, relative to the total mass of all constituent units (sometimes referred to in this specification as "content of constituent units derived from vinyl acetate") is 10% to 40% by mass. In other words, a preferred polar resin is a polar resin in which the mass of the constituent units derived from ethylene in the ethylene-vinyl acetate copolymer, relative to the total mass of all constituent units, is 60% to 90% by mass.

[0193] Examples of non-polar resins mentioned above include, for example, low-density polyethylene (LLDPE), linear low-density polyethylene (LLDPE), metallocene-catalyzed linear low-density polyethylene (metallocene LLDPE), medium-density polyethylene (MDPE), high-density polyethylene (HDPE), and other polyethylene (PE); polypropylene (PP).

[0194] The composition for forming the intermediate layer and the intermediate layer may contain only one or more of the aforementioned non-silicone resins. When there are two or more, the combination and ratio of these non-silicone resins can be arbitrarily selected. For example, the composition for forming the intermediate layer and the intermediate layer may contain one or more non-silicone resins that are polar resins and not contain any non-silicone resins that are not polar resins; it may contain one or more non-silicone resins that are not polar resins and not contain any non-silicone resins that are polar resins; or it may contain one or more of both polar and non-polar non-silicone resins. It is preferable that the composition for forming the intermediate layer and the intermediate layer contain at least one non-silicone resin that is a polar resin.

[0195] In the composition for forming the intermediate layer and in the intermediate layer, the ratio of the content of the aforementioned non-silicone resin as the polar resin to the total content of the aforementioned non-silicone resin is preferably 80% by mass or more, more preferably 90% by mass or more, for example, it can be any one of 95% by mass or more, 97% by mass or more, and 99% by mass or more. By making the aforementioned ratio above the aforementioned lower limit value, the effects brought about by using the aforementioned polar resin can be obtained more significantly. On the other hand, the aforementioned ratio is 100% by mass or less.

[0196] That is, in the composition for forming the intermediate layer and in the intermediate layer, the ratio of the content of the aforementioned non-silicone resin as a non-polar resin to the total content of the aforementioned non-silicone resin is preferably 20% by mass or less, and more preferably 10% by mass or less, for example, it can be any one of 5% by mass or less, 3% by mass or less, and 1% by mass or less. On the other hand, the aforementioned ratio is 0% by mass or more.

[0197] From the viewpoint of good operability, the composition for forming the intermediate layer preferably contains a solvent in addition to the aforementioned non-silicone resin, and may also contain components that are not equivalent to either the aforementioned non-silicone resin or the solvent (sometimes referred to as "additives" in this specification). The intermediate layer may contain only the aforementioned non-silicone resin, or it may contain both the aforementioned non-silicone resin and the aforementioned additives.

[0198] The aforementioned additives may be either resin components (sometimes referred to as "other resin components" in this specification) or non-resin components.

[0199] Examples of other resin components mentioned above include non-silicone resins with a weight average molecular weight (Mw) of more than 100,000, and silicone resins.

[0200] There are no particular limitations on non-silicone resins with a weight average molecular weight of more than 100,000, provided that such conditions are met.

[0201] As described below, the intermediate layer containing the aforementioned silicone resin makes it easier to pick up semiconductor wafers with film-like adhesives.

[0202] The aforementioned silicone resins are not particularly limited as long as they are resin components with silicon atoms as constituent atoms. For example, there is no particular limitation on the weight average molecular weight of silicone resins.

[0203] As a preferred silicone resin, examples include resin components that exhibit release properties for adhesive components, with silicone resins (resin components having silicone bonds (-Si-O-Si-), also known as silicone compounds) being more preferred.

[0204] Examples of the aforementioned silicate-based resins include polydialkylsiloxanes. The alkyl groups in the aforementioned polydialkylsiloxanes preferably have 1 to 20 carbon atoms. In the aforementioned polydialkylsiloxanes, the two alkyl groups bonded to one silicon atom may be the same or different from each other. When the two alkyl groups bonded to one silicon atom are different from each other, the combination of these two alkyl groups is not particularly limited. Examples of the aforementioned polydialkylsiloxanes include polydimethylsiloxanes.

[0205] The aforementioned non-resin components may be, for example, any of organic and inorganic compounds, without particular limitation.

[0206] The composition for forming the intermediate layer and the intermediate layer may contain only one or more of the aforementioned additives. When there are two or more additives, the combination and ratio of these additives can be arbitrarily selected. For example, the composition for forming the intermediate layer and the intermediate layer, as the aforementioned additives, may contain one or more resin components and not contain any non-resin components, may contain one or more non-resin components and not contain any resin components, or may contain one or more resin components and one or more non-resin components.

[0207] When the composition for forming the intermediate layer and the intermediate layer contain the aforementioned additives, the ratio of the content of the aforementioned non-silicone resin in the intermediate layer to the total mass of the intermediate layer (in other words, the ratio of the content of the aforementioned non-silicone resin in the composition for forming the intermediate layer to the total content of all components other than the solvent) is preferably from 90% to 99.99% by mass, for example, it can be any one of 90% to 97.5% by mass, 90% to 95% by mass, and 90% to 92.5% by mass, or any one of 92.5% to 99.99% by mass, 95% to 99.99% by mass, and 97.5% to 99.99% by mass, or 92.5% to 97.5% by mass. When the intermediate layer forming composition and the intermediate layer contain the aforementioned additives, the ratio of the content of the aforementioned additives in the intermediate layer to the total mass of the intermediate layer (in other words, the ratio of the content of the aforementioned additives in the intermediate layer forming composition to the total content of all components other than the solvent) is preferably from 0.01% to 10% by mass, for example, it can be any one of 2.5% to 10% by mass, 5% to 10% by mass, and 7.5% to 10% by mass, or any one of 0.01% to 7.5% by mass, 0.01% to 5% by mass, and 0.01% to 2.5% by mass, or 2.5% to 7.5% by mass.

[0208] The solvents contained in the composition for forming the intermediate layer are not particularly limited, but preferred examples include hydrocarbons such as toluene and xylene; alcohols such as methanol, ethanol, 2-propanol, isobutanol (2-methylpropane-1-ol), and 1-butanol; esters such as ethyl acetate; ketones such as acetone and methyl ethyl ketone; ethers such as tetrahydrofuran; and amides (compounds containing amide bonds) such as dimethylformamide and N-methylpyrrolidone. The composition for forming the intermediate layer may contain only one type of solvent or two or more types of solvents. When there are two or more types, the combination and ratio of these solvents can be arbitrarily selected.

[0209] The solvent contained in the composition for forming the intermediate layer is preferably tetrahydrofuran, based on the view that it can more uniformly mix the components contained in the composition for forming the intermediate layer.

[0210] There is no particular limitation on the solvent content of the composition for forming the intermediate layer, as long as it is appropriately selected according to the type of components other than the solvent.

[0211] As will be described later, based on the viewpoint that semiconductor wafers with film-like adhesives can be picked up more easily, a preferred intermediate layer may include, for example, an ethylene-vinyl acetate copolymer as the aforementioned non-silicone resin and a silicone compound as the aforementioned additive, wherein the content of the aforementioned ethylene-vinyl acetate copolymer (the aforementioned non-silicone resin) in the intermediate layer relative to the total mass of the intermediate layer is within any of the aforementioned numerical ranges, and the content of the aforementioned silicone compound (the aforementioned additive) in the intermediate layer relative to the total mass of the intermediate layer is within any of the aforementioned numerical ranges. For example, as such an intermediate layer, a layer may include an ethylene-vinyl acetate copolymer as the aforementioned non-silicone resin and a silicone compound as the aforementioned additive, wherein the content of the aforementioned ethylene-vinyl acetate copolymer in the intermediate layer relative to the total mass of the intermediate layer is 90% to 99.99% by mass, and the content of the aforementioned silicone compound in the intermediate layer relative to the total mass of the intermediate layer is 0.01% to 10% by mass. However, this is one example of a better intermediate layer.

[0212] As a preferred intermediate layer, for example, the aforementioned intermediate layer contains an ethylene-vinyl acetate copolymer as the aforementioned non-silicone resin and a silicone compound as the aforementioned additive. In the aforementioned ethylene-vinyl acetate copolymer, the mass ratio of the constituent units derived from vinyl acetate to the total mass of all constituent units (in other words, the content of constituent units derived from vinyl acetate) is 10% to 40% by mass; in the aforementioned intermediate layer, the content of the aforementioned ethylene-vinyl acetate copolymer is 90% to 99.99% by mass to the total mass of the intermediate layer; and in the aforementioned intermediate layer, the content of the aforementioned silicone compound is 0.01% to 10% by mass to the total mass of the intermediate layer. However, this is only one example of a preferred intermediate layer.

[0213] In semiconductor device manufacturing wafers, when analyzing the film-adhesive side of the intermediate layer (e.g., the first side 13a of the intermediate layer 13 shown in FIG. 1) by X-ray photoelectron spectroscopy (sometimes referred to as "XPS" in this specification), the ratio of silicon concentration to the total concentration of carbon, oxygen, nitrogen, and silicon (sometimes abbreviated as "silicon concentration ratio" in this specification) is preferably 1% to 20% on an elemental molar basis. By using a semiconductor device manufacturing wafer having such an intermediate layer, as described later, it is easier to pick up semiconductor wafers with film-adhesive.

[0214] The aforementioned silicon concentration ratio can be calculated using the following formula: [Measured silicon concentration in XPS analysis (atomic%)] / {[Measured carbon concentration in XPS analysis (atomic%)] + [Measured oxygen concentration in XPS analysis (atomic%)] + [Measured nitrogen concentration in XPS analysis (atomic%)] + [Measured silicon concentration in XPS analysis (atomic%)]} × 100

[0215] XPS analysis can be performed on the surface of the intermediate layer on the adhesive side of the film using an X-ray photoelectron spectrophotometer (e.g., ULVAC's "QuantraSXM") with an irradiation angle of 45°, an X-ray beam diameter of 20 μmφ, and an output of 4.5W.

[0216] Based on the view that this effect is more significant, the aforementioned silicon concentration ratio, for example, based on the mole of elements, can be any one of 4% to 20%, 8% to 20%, and 12% to 20%, or any one of 1% to 16%, 1% to 12%, and 1% to 8%, or any one of 4% to 16% and 8% to 12%.

[0217] When performing XPS analysis as described above, it is possible to detect other elements in the intermediate layer (the surface to be analyzed by XPS) that are not equivalent to any of carbon, oxygen, nitrogen, or silicon. However, even if the aforementioned other elements are detected, since the concentration is trace, the proportion of silicon concentration can usually be calculated with high accuracy by using the concentration measurements of carbon, oxygen, nitrogen, and silicon.

[0218] The intermediate layer can be composed of one layer (single layer) or multiple layers of two or more layers. When it is composed of multiple layers, these multiple layers can be the same or different from each other. There is no particular limitation on the combination of these multiple layers.

[0219] As mentioned above, the maximum width of the intermediate layer is preferably less than the maximum width of the adhesive layer and the maximum width of the substrate. The maximum width of the intermediate layer can be appropriately selected considering the size of the semiconductor wafer. For example, the maximum width of the intermediate layer can be 150mm to 160mm, 200mm to 210mm, or 300mm to 310mm. These three numerical ranges correspond to semiconductor wafers with a maximum width of 150mm, 200mm, or 300mm in the direction parallel to the attachment surface of the semiconductor device manufacturing wafer. However, as explained above, in the case where the film adhesive is cut by expanding the semiconductor device manufacturing wafer after the semiconductor wafer is diced following the formation of the modified layer, the diced semiconductor wafers (semiconductor wafer group) are treated as a whole, and the semiconductor device manufacturing wafer is attached to these semiconductor wafers.

[0220] Unless otherwise specified in this specification, the term "width of the intermediate layer" means, for example, "the width of the intermediate layer in the direction parallel to the first surface of the intermediate layer." For example, when the intermediate layer has a circular planar shape, the maximum value of the width of the intermediate layer becomes the diameter of the circle of the aforementioned planar shape. The same applies to semiconductor wafers. That is, the term "width of the semiconductor wafer" means "the width of the semiconductor wafer in the direction parallel to the mounting surface of the semiconductor device manufacturing wafer." For example, when the semiconductor wafer has a circular planar shape, the maximum value of the width of the semiconductor wafer becomes the diameter of the circle of the aforementioned planar shape.

[0221] The maximum width of the intermediate layer, ranging from 150mm to 160mm, refers to a size that is equal to or no more than 10mm in width relative to the maximum width of the 150mm semiconductor wafer. Similarly, the maximum width of the intermediate layer, ranging from 200mm to 210mm, refers to a size that is equal to or no more than 10mm in width relative to the maximum width of the 200mm semiconductor wafer. Likewise, the maximum width of the intermediate layer, ranging from 300mm to 310mm, refers to a size that is equal to or no more than 10mm in width relative to the maximum width of the 300mm semiconductor wafer. That is, in this embodiment, regardless of whether the maximum width of the semiconductor wafer is any of 150mm, 200mm, or 300mm, the difference between the maximum width of the intermediate layer and the maximum width of the semiconductor wafer can be, for example, 0mm to 10mm.

[0222] The thickness of the intermediate layer can be appropriately selected according to the purpose, preferably from 5μm to 150μm, and more preferably from 5μm to 120μm. For example, it can be any of 10μm to 90μm and 10μm to 60μm, or any of 30μm to 120μm and 60μm to 120μm. By making the thickness of the intermediate layer above the aforementioned lower limit, the structure of the intermediate layer can be more stable. By making the thickness of the intermediate layer below the aforementioned upper limit, the film adhesive can be cut more easily during blade cutting and the aforementioned expansion of the wafer for semiconductor device manufacturing. The term "thickness of the intermediate layer" here refers to the overall thickness of the intermediate layer. For example, the thickness of an intermediate layer composed of multiple layers refers to the total thickness of all layers constituting the intermediate layer.

[0223] When the intermediate layer contains the aforementioned silicone resin, especially when the silicone resin has low compatibility with the aforementioned non-silicone resin that is the main component, the silicone resin in the intermediate layer tends to concentrate in the vicinity of both sides (the first side and the opposite side) of the intermediate layer in semiconductor device manufacturing wafers. Furthermore, the stronger this tendency, the easier it is for the film-like adhesive adjacent to (directly in contact with) the intermediate layer to peel off from the intermediate layer, and as described later, it is easier to pick up the semiconductor wafer with the film-like adhesive. For example, comparing intermediate layers that differ only in thickness but are identical in composition, area of ​​the aforementioned two sides, etc., the proportion (mass %) of silicone resin content relative to the total mass of the intermediate layer is the same in these intermediate layers. However, the silicone resin content (parts by mass) of the intermediate layer is higher in the thicker intermediate layer than in the thinner intermediate layer. Therefore, when silicone resin tends to concentrate in the interlayer as described above, a thicker interlayer will result in a greater amount of silicone resin concentrated on both sides (the first side and its opposite side) and in the surrounding area compared to a thinner interlayer. Thus, even without changing the aforementioned proportions, the pick-up suitability of semiconductor wafers with film-like adhesives can be adjusted by regulating the thickness of the interlayer in a semiconductor device manufacturing wafer. For example, by increasing the thickness of the interlayer in a semiconductor device manufacturing wafer, it is easier to pick up semiconductor wafers with film-like adhesives.

[0224] ○ Film-like adhesive The aforementioned film-like adhesive has curing properties, preferably thermosetting properties, and more preferably pressure-sensitive adhesive properties. Film-like adhesives that simultaneously possess thermosetting and pressure-sensitive adhesive properties can be adhered to various substrates by gently pressing them against the substrate in their uncured state. In addition, film-like adhesives can also be those that can be softened by heat and adhered to various substrates. The film-like adhesive eventually becomes a highly impact-resistant cured material after curing, which maintains sufficient adhesive properties even under severe high temperature and high humidity conditions.

[0225] When viewed from above, the area of ​​the semiconductor device manufacturing wafer (i.e., the area of ​​the first side) is preferably set to be smaller than the area of ​​the substrate (i.e., the area of ​​the first side) and the area of ​​the adhesive layer (i.e., the area of ​​the first side) in a manner close to the area of ​​the semiconductor wafer before dicing. In this semiconductor device manufacturing wafer, a portion of the first side of the adhesive layer has an area that is not in contact with the intermediate layer and the film adhesive (i.e., the aforementioned non-deposition area). This makes the expansion of the semiconductor device manufacturing wafer easier, and the force applied to the film adhesive during expansion is not dispersed, making it easier to cut the film adhesive.

[0226] Film-like adhesives can be formed using adhesive compositions containing constituent materials of film-like adhesives. For example, by applying an adhesive composition to the surface to which the film-like adhesive is to be formed and drying it as necessary, a film-like adhesive can be formed at the target site.

[0227] In the film adhesive, the total content of one or more of the following ingredients in the film adhesive is not more than 100% by mass relative to the total mass of the film adhesive. Similarly, in the adhesive composition, the total content of one or more of the following ingredients in the adhesive composition is not more than 100% by mass relative to the total mass of the adhesive composition.

[0228] The application of the adhesive composition can be carried out in the same way as the application of the adhesive composition described above.

[0229] There are no particular limitations on the drying conditions of the adhesive composition. When the adhesive composition contains the solvent described later, it is preferable to dry it by heating, for example, at 70°C to 130°C for 10 seconds to 5 minutes.

[0230] The film adhesive may consist of one layer (single layer) or multiple layers of two or more layers. When it consists of multiple layers, these multiple layers may be the same or different from each other, and there is no particular limitation on the combination of these multiple layers.

[0231] As mentioned above, the maximum width of the film adhesive is preferably smaller than the maximum width of the adhesive layer and the maximum width of the substrate. The maximum width of the film adhesive relative to the size of the semiconductor wafer can also be the same as the maximum width of the intermediate layer as previously described. That is, the maximum width of the film adhesive can be appropriately selected considering the size of the semiconductor wafer. For example, the maximum width of the film adhesive can be 150mm to 160mm, 200mm to 210mm, or 300mm to 310mm. These three ranges correspond to semiconductor wafers with a maximum width of 150mm, 200mm, or 300mm in the direction parallel to the attachment surface of the semiconductor device manufacturing wafer.

[0232] Unless otherwise specified in this specification, the term "width of the film adhesive" means, for example, "the width of the film adhesive in a direction parallel to the first surface of the film adhesive." For example, in the case of a film adhesive with a circular planar shape, the maximum value of the width of the film adhesive is the diameter of the circle of the aforementioned planar shape. Furthermore, unless otherwise specified, the term "width of the film adhesive" does not refer to the width of the film adhesive after cutting during the manufacturing process of the semiconductor wafer with the film adhesive described later, but rather to the width of the film adhesive before cutting (before cutting).

[0233] The maximum width of the 150mm to 160mm film adhesive is equal to or no more than 10mm relative to the maximum width of the 150mm semiconductor wafer. Similarly, the maximum width of the 200mm to 210mm film adhesive is equal to or no more than 10mm relative to the maximum width of the 200mm semiconductor wafer. Similarly, the maximum width of the 300mm to 310mm film adhesive is equal to or no more than 10mm relative to the maximum width of the 300mm semiconductor wafer. That is, in this embodiment, the difference between the maximum width of the film adhesive and the maximum width of the semiconductor wafer, regardless of whether the maximum width of the semiconductor wafer is any of 150mm, 200mm, or 300mm, can be, for example, 0mm to 10mm.

[0234] In this embodiment, the maximum width of the intermediate layer and the maximum width of the film adhesive are both within the range of the above values. That is, as an example of a wafer for manufacturing a semiconductor device according to this embodiment, the maximum width of the intermediate layer and the maximum width of the film adhesive can be 150mm to 160mm, 200mm to 210mm, or 300mm to 310mm.

[0235] The thickness of the film adhesive is not particularly limited, but 1 μm to 30 μm is preferred, 2 μm to 20 μm is more preferred, and 3 μm to 10 μm is especially preferred. By making the thickness of the film adhesive above the aforementioned lower limit, a higher adhesion force can be obtained relative to the substrate (semiconductor wafer). By making the thickness of the film adhesive below the aforementioned upper limit, the film adhesive can be cut more easily during blade cutting and the aforementioned expansion of the wafer used in semiconductor device manufacturing. The term "thickness of the film adhesive" here refers to the total thickness of the film adhesive. For example, the thickness of a film adhesive composed of multiple layers refers to the total thickness of all layers constituting the film adhesive. Next, the adhesive composition will be explained.

[0236] [Adhesive Composition] Preferred adhesive compositions may include, for example, those containing a polymer component (a) and a thermosetting component (b). The following description addresses each component. Furthermore, the adhesive composition shown below is a preferred example, and the adhesive composition in this embodiment is not limited to those shown below.

[0237] [Polymer Component (a)] Polymer component (a) can be considered as a component formed by the polymerization reaction of a polymeric compound. It is a polymeric compound that imparts film-forming properties, flexibility, etc., to film adhesives and can improve adhesion (in other words, adhesion) to objects such as semiconductor wafers. Polymer component (a) is thermoplastic but not thermosetting.

[0238] The polymer component (a) contained in the adhesive composition and the film adhesive may be only one type or two or more types. When there are two or more types, the combination and ratio of these polymer components (a) can be arbitrarily selected.

[0239] Examples of polymer component (a) include acrylic resin, urethane resin, phenoxy resin, polysiloxane resin, saturated polyester resin, etc. Among these, acrylic resin is preferred as polymer component (a).

[0240] In the adhesive composition, the ratio of the content of polymer component (a) to the total content of all components other than the solvent (that is, the ratio of the content of polymer component (a) to the total mass of the film adhesive in the film adhesive) is preferably 20% to 75% by mass, and more preferably 30% to 65% by mass.

[0241] [Thermosetting component (b)] Thermosetting component (b) is a component that has thermosetting properties and is used to thermoset the film adhesive. The thermosetting component (b) contained in the adhesive composition and the film adhesive may be only one type or two or more types. When there are two or more types, the combination and ratio of these thermosetting components (b) can be arbitrarily selected.

[0242] Examples of thermosetting components (b) include epoxy thermosetting resins, polyimide resins, and unsaturated polyester resins. Among these, epoxy thermosetting resins are preferred as thermosetting components (b).

[0243] 〇 Epoxy thermosetting resin Epoxy thermosetting resin is composed of epoxy resin (b1) and thermosetting agent (b2). The adhesive composition and film adhesive contain only one type of epoxy thermosetting resin or two or more types. When there are two or more types, the combination and ratio of these epoxy thermosetting resins can be arbitrarily selected.

[0244] ・Epoxy resin (b1) As epoxy resin (b1), known epoxy resins can be listed, such as: multifunctional epoxy resins, biphenyl compounds, bisphenol A diglycidyl ether and its hydrogenates, o-cresol phenolic varnish epoxy resin, dicyclopentadiene type epoxy resin, biphenyl type epoxy resin, bisphenol A type epoxy resin, bisphenol F type epoxy resin, phenyl skeleton type epoxy resin and other epoxy compounds with more than 2 functions.

[0245] As the epoxy resin (b1), an epoxy resin having unsaturated hydrocarbon groups can also be used. Epoxy resins having unsaturated hydrocarbon groups have higher compatibility with acrylic resins compared to epoxy resins without unsaturated hydrocarbon groups. Therefore, by using an epoxy resin having unsaturated hydrocarbon groups, the reliability of the encapsulation obtained using a film adhesive can be improved.

[0246] The epoxy resin (b1) contained in the adhesive composition and the film adhesive may be only one type or two or more types. When there are two or more types, the combination and ratio of these epoxy resins (b1) can be arbitrarily selected.

[0247] ・Thermosetting Agent (b2) Thermosetting agent (b2) functions as a curing agent for epoxy resin (b1). Examples of thermosetting agents (b2) include compounds having two or more functional groups that can react with epoxy groups in one molecule. Examples of the aforementioned functional groups include phenolic hydroxyl groups, alcoholic hydroxyl groups, amino groups, carboxyl groups, and groups formed by anhydride conversion of acid groups, preferably phenolic hydroxyl groups, amino groups, or groups formed by anhydride conversion of acid groups, and more preferably phenolic hydroxyl groups or amino groups.

[0248] Among the thermosetting agents (b2), examples of phenolic curing agents having phenolic hydroxyl groups include: polyfunctional phenolic resins, biphenol, phenolic varnish-type phenolic resins, dicyclopentadiene-type phenolic resins, aralkyl-type phenolic resins, etc. Among the thermosetting agents (b2), examples of amine curing agents having amine groups include: dicyandiamide (DICY), etc.

[0249] Thermosetting agent (b2) may also have unsaturated hydrocarbon groups.

[0250] The adhesive composition and the thermosetting agent (b2) contained in the film adhesive may be only one type or two or more types. When there are two or more types, the combination and ratio of these thermosetting agents (b2) can be arbitrarily selected.

[0251] In the adhesive composition and the film adhesive, the content of the thermosetting agent (b2) relative to 100 parts by weight of epoxy resin (b1) is preferably from 0.1 parts by weight to 500 parts by weight, and more preferably from 1 part by weight to 200 parts by weight. For example, it can be any one of 1 part by weight to 100 parts by weight, 1 part by weight to 50 parts by weight, and 1 part by weight to 25 parts by weight. By making the aforementioned content of the thermosetting agent (b2) above the aforementioned lower limit, the curing of the film adhesive becomes easier. By making the aforementioned content of the thermosetting agent (b2) below the aforementioned upper limit, the moisture absorption rate of the film adhesive is reduced, and the reliability of the encapsulation obtained using the film adhesive is further improved.

[0252] In the adhesive composition and the film adhesive, the content of the thermosetting component (b) (e.g., the total content of epoxy resin (b1) and thermosetting agent (b2)) relative to the content of polymer component (a) is preferably 5 to 100 parts by mass, more preferably 5 to 75 parts by mass, and especially preferably 5 to 50 parts by mass. For example, it can be any of 5 to 35 parts by mass and 5 to 20 parts by mass. By making the thermosetting component (b) in such a range as described above, the peel force between the intermediate layer and the film adhesive becomes more stable.

[0253] To improve the various physical properties of film adhesives, adhesive compositions and film adhesives may, as necessary, contain other components that are not equivalent to these polymer components (a) and thermosetting components (b), in addition to the polymer component (a) and thermosetting component (b). Preferred other components contained in adhesive compositions and film adhesives include, for example, curing accelerators (c), fillers (d), coupling agents (e), crosslinking agents (f), energy-line curing resins (g), photopolymerization initiators (h), and general additives (i).

[0254] [Curing Accelerator (c)] The curing accelerator (c) is a component used to adjust the curing speed of the adhesive composition. Examples of preferred curing accelerators (c) include: tertiary amines such as triethylenediamine, benzyldimethylamine, triethanolamine, dimethylaminoethanol, and tris(dimethylaminomethyl)phenol; imidazoles (imidazoles in which one or more hydrogen atoms are replaced by groups other than hydrogen atoms) such as 2-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, 2-phenyl-4,5-dihydroxymethylimidazole, and 2-phenyl-4-methyl-5-hydroxymethylimidazole; organophosphorus compounds (phosphorus compounds in which one or more hydrogen atoms are replaced by organic groups) such as tributylphosphine, diphenylphosphine, and triphenylphosphine; and tetraphenylboronic salts such as tetraphenylphosphonium tetraphenylboronic acid and triphenylphosphine tetraphenylboronic acid.

[0255] The curing accelerator (c) contained in the adhesive composition and the film adhesive may be only one type or two or more types. When there are two or more types, the combination and ratio of these curing accelerators (c) can be arbitrarily selected.

[0256] When using curing accelerator (c), the content of curing accelerator (c) in the adhesive composition and the film adhesive is preferably 0.01 to 10 parts by mass relative to the content of thermosetting component (b) per 100 parts by mass, and more preferably 0.1 to 5 parts by mass. By ensuring that the aforementioned content of curing accelerator (c) is above the aforementioned lower limit, the effect obtained by using curing accelerator (c) becomes more significant. By ensuring that the content of curing accelerator (c) is below the aforementioned upper limit, for example, the effect of inhibiting the highly polar curing accelerator (c) from migrating and segregating to the bonding interface between the film adhesive and the substrate under high temperature and high humidity conditions becomes higher, and the reliability of the encapsulation obtained using the film adhesive is further improved.

[0257] [Filler (d)] By containing filler (d), the cutability of the film adhesive is further improved. Furthermore, by containing filler (d), the coefficient of thermal expansion of the film adhesive is easier to adjust, allowing for optimization of this coefficient of thermal expansion relative to the object to which the film adhesive is applied, thus improving the reliability of the encapsulation obtained using the film adhesive. In addition, by including filler (d) in the film adhesive, the moisture absorption rate of the cured film adhesive can be reduced, or its heat dissipation can be improved.

[0258] The filler (d) may be either an organic filler or an inorganic filler, with inorganic fillers being preferred. Examples of preferred inorganic fillers include: powders of silicon oxide, alumina, talc, calcium carbonate, titanium dioxide, iron oxide, silicon carbide, boron nitride, etc.; beads formed by spheroidizing these inorganic fillers; surface-modified versions of these inorganic fillers; single-crystal fibers of these inorganic fillers; glass fibers, etc. Among these, silicon oxide or alumina is preferred as the inorganic filler.

[0259] The filler (d) contained in the adhesive composition and the film adhesive may be only one type or two or more types. When there are two or more types, the combination and ratio of these fillers (d) can be arbitrarily selected.

[0260] When using filler (d), the proportion of filler (d) in the adhesive composition relative to the total content of all components other than the solvent (i.e., the proportion of filler (d) in the film adhesive relative to the total mass of the film adhesive) is preferably 5% to 80% by mass, more preferably 10% to 70% by mass, and especially preferably 20% to 60% by mass. By making the aforementioned proportions within such a range, the effects brought about by using the aforementioned filler (d) can be obtained more significantly.

[0261] [Coupling Agent (e)] Film adhesives containing coupling agent (e) can improve adhesion and bonding strength to the substrate. Furthermore, by containing coupling agent (e), the cured film adhesive can improve water resistance without compromising heat resistance. Coupling agent (e) has functional groups that can react with inorganic or organic compounds.

[0262] The coupling agent (e) is preferably a compound whose functional groups can react with the functional groups of polymer component (a), thermosetting component (b), etc., and a silane coupling agent is more preferred.

[0263] The coupling agent (e) contained in the adhesive composition and the film adhesive may be only one type or two or more types. When there are two or more types, the combination and ratio of these coupling agents (e) can be arbitrarily selected.

[0264] When using coupling agent (e), the content of coupling agent (e) in the adhesive composition and film adhesive is preferably 0.03 to 20 parts by mass relative to 100 parts by mass of the total content of polymer component (a) and thermosetting component (b), more preferably 0.05 to 10 parts by mass, and especially preferably 0.1 to 5 parts by mass. By ensuring that the aforementioned content of coupling agent (e) is above the aforementioned lower limit, the effects of using coupling agent (e), such as improving the dispersibility of filler (d) with the resin or improving the adhesion of film adhesive to the substrate, are more significant. By ensuring that the aforementioned content of coupling agent (e) is below the aforementioned upper limit, the generation of gas escape can be further suppressed.

[0265] [Crosslinking agent (f)] When the polymer component (a) uses the aforementioned acrylic resin or the like, which has functional groups such as vinyl, (meth)acrylic, amino, hydroxy, carboxyl, and isocyanate groups that can bond with other compounds, the adhesive composition and the film adhesive may also contain a crosslinking agent (f). The crosslinking agent (f) is a component used to crosslink the aforementioned functional groups in the polymer component (a) to other compounds. By crosslinking in this way, the initial adhesion and cohesion of the film adhesive can be adjusted.

[0266] As a crosslinking agent (f), examples include: organic polyisocyanate compounds, organic polyimide compounds, metal chelate crosslinking agents (crosslinking agents with metal chelate structures), aziridine crosslinking agents (crosslinking agents with aziridine groups), etc.

[0267] When the crosslinking agent (f) is an organic polyisocyanate compound, it is preferable to use a polymer containing hydroxyl groups for the polymer component (a). When the crosslinking agent (f) has isocyanate groups and the polymer component (a) has hydroxyl groups, the crosslinking structure can be easily introduced into the film adhesive by the reaction between the crosslinking agent (f) and the polymer component (a).

[0268] The crosslinking agent (f) contained in the adhesive composition and the film adhesive may be only one type or two or more types. When there are two or more types, the combination and ratio of these crosslinking agents (f) can be arbitrarily selected.

[0269] When using a crosslinking agent (f), the content of the crosslinking agent (f) in the adhesive composition is preferably 0.01 to 20 parts by mass relative to 100 parts by mass of the polymer component (a), more preferably 0.1 to 10 parts by mass, and especially preferably 0.3 to 5 parts by mass. By ensuring that the aforementioned content of the crosslinking agent (f) is above or above the aforementioned lower limit, the effects brought about by the use of the crosslinking agent (f) can be obtained more significantly. By ensuring that the aforementioned content of the crosslinking agent (f) is below the aforementioned upper limit, the excessive use of the crosslinking agent (f) can be suppressed.

[0270] [Energy Line Curing Resin (g)] Adhesive composition and film adhesive: By containing energy line curing resin (g), the film adhesive can change its properties by irradiation with energy lines.

[0271] The energy-line curable resin (g) is obtained from an energy-line curable compound. Examples of such energy-line curable compounds include compounds having at least one polymerizable double bond within the molecule, preferably acrylate compounds having a (meth)acrylic group.

[0272] The adhesive composition may contain only one type of energy-curing resin (g) or two or more types. When there are two or more types, the combination and ratio of these energy-curing resins (g) can be arbitrarily selected.

[0273] When using energy line curing resin (g), the content of energy line curing resin (g) in the adhesive composition relative to the total mass of the adhesive composition is preferably 1% to 95% by mass, more preferably 5% to 90% by mass, and especially preferably 10% to 85% by mass.

[0274] [Photopolymerization initiator (h)] When the adhesive composition and film adhesive contain energy line curing resin (g), in order to carry out the polymerization reaction of energy line curing resin (g) efficiently, a photopolymerization initiator (h) may also be included.

[0275] As a photopolymerization initiator (h) in the adhesive composition, examples include: benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin isobutyl ether, benzoin benzoic acid, methyl benzoate, benzoin dimethyl ketal, and other benzoin compounds; acetophenone, 2-hydroxy-2-methyl-1-phenyl-propane-1-one, 2,2-dimethoxy-1,2-diphenylethane-1-one, and other acetophenone compounds; bis(2,4,6-trimethylbenzoyl)phenylphosphine oxide, 2,4,6-trimethylbenzoyldiphenyl Examples of photopolymerization initiators include phosphine oxides such as phosphine oxide; sulfide compounds such as benzylphenyl sulfide and tetramethylthiuram monosulfide; α-keto alcohol compounds such as 1-hydroxycyclohexylphenyl ketone; azo compounds such as azobisisobutyronitrile; titanium eccentricate compounds such as titanium eccentricate; thioxanthone compounds such as thioxanthone; peroxide compounds; diacetylene and other diketone compounds; benzohexyphenidate; dibenzohexyphenidate; benzophenone; 2,4-diethylthioxanthone; 1,2-diphenylmethane; 2-hydroxy-2-methyl-1-[4-(1-methylvinyl)phenyl]propanone; and anthraquinone compounds such as 2-chloroanthraquinone. Furthermore, photosensitizers such as amines can also be cited as photopolymerization initiators (h).

[0276] The photopolymerization initiator (h) contained in the adhesive composition may be only one type or two or more types. When there are two or more types, the combination and ratio of these photopolymerization initiators (h) can be arbitrarily selected.

[0277] When using a photopolymerization initiator (h), the content of the photopolymerization initiator (h) in the adhesive composition is preferably 0.1 to 20 parts by mass relative to the content of the energy line curing resin (g) per 100 parts by mass, more preferably 1 to 10 parts by mass, and especially preferably 2 to 5 parts by mass.

[0278] [General Additives (i)] General additives (i) can be known substances and can be selected arbitrarily according to the purpose without any particular limitation. Examples of preferred additives include plasticizers, antistatic agents, antioxidants, colorants (dyes, pigments), and getters.

[0279] The adhesive composition and the film adhesive may contain only one or more general additives (i). When there are two or more, the combination and ratio of these general additives (i) can be arbitrarily selected. There is no particular limitation on the content of the adhesive composition and the film adhesive, as long as it is appropriately selected according to the purpose.

[0280] [Soluble Medium] It is preferable that the adhesive composition contains a solvent. Adhesive compositions containing a solvent have better workability. The aforementioned solvent is not particularly limited, but preferred examples include hydrocarbons such as toluene and xylene; alcohols such as methanol, ethanol, 2-propanol, isobutanol (2-methylpropane-1-ol), and 1-butanol; esters such as ethyl acetate; ketones such as acetone and methyl ethyl ketone; ethers such as tetrahydrofuran; and amides (compounds with amide bonds) such as dimethylformamide and N-methylpyrrolidone. The adhesive composition may contain only one type of solvent or two or more types of solvents. When there are two or more types, the combination and ratio of these solvents can be arbitrarily selected.

[0281] Based on the consideration that the components contained in the adhesive composition can be mixed more evenly, the solvent contained in the adhesive composition is preferably methyl ethyl ketone or the like.

[0282] There is no particular limitation on the solvent content of the adhesive composition, as long as it is appropriately selected according to the types of components other than the solvent.

[0283] [Method for manufacturing adhesive composition] Adhesive composition can be obtained by blending the various components that constitute the adhesive composition. Except for differences in the types of blending components, adhesive composition can be manufactured in the same way as the adhesive composition described above.

[0284] ◇ Manufacturing method of semiconductor device manufacturing wafer The aforementioned semiconductor device manufacturing wafer can be manufactured by laminating the above-mentioned layers in a corresponding positional relationship. The method of forming each layer is as described above.

[0285] For example, the aforementioned semiconductor device manufacturing wafer can be manufactured by pre-preparing a substrate, an adhesive layer, an intermediate layer, and a film adhesive, and then laminating and stacking these layers in the order of substrate, adhesive layer, intermediate layer, and film adhesive. However, this is only one example of a manufacturing method for a semiconductor device manufacturing wafer.

[0286] The aforementioned semiconductor device manufacturing wafer can also be manufactured in the following manner: two or more intermediate laminates are prefabricated to form a plurality of layers constituting the semiconductor device manufacturing wafer, and then these intermediate laminates are bonded together. The composition of the intermediate laminates can be arbitrarily selected. For example, a first intermediate laminate (equivalent to the aforementioned support sheet) consisting of a substrate and an adhesive layer is prefabricated, and a second intermediate laminate consisting of an intermediate layer and a film-like adhesive layer is bonded together, thereby manufacturing a semiconductor device manufacturing wafer. However, this is only one example of a method for manufacturing a semiconductor device manufacturing wafer.

[0287] For example, in the case of manufacturing a semiconductor device wafer in which the area of ​​the first surface of the intermediate layer and the area of ​​the first surface of the film adhesive, as shown in FIG. 1, are both smaller than the areas of the first surface of the adhesive layer and the first surface of the substrate, a step of processing the intermediate layer and the film adhesive to the target size can be added at any stage of the above manufacturing method. For example, in the manufacturing method using the aforementioned second intermediate laminate, a step of processing the intermediate layer and the film adhesive in the second intermediate laminate to the target size can also be added to manufacture a semiconductor device wafer.

[0288] In the case of manufacturing a semiconductor device wafer with a release film on a film adhesive, for example, the film adhesive can be formed on the release film and maintained in this state, and then the remaining layers can be deposited to manufacture the semiconductor device wafer. Alternatively, the substrate, adhesive layer, intermediate layer, and film adhesive can all be deposited, and then the release film can be deposited on the film adhesive to manufacture the semiconductor device wafer. The release film can be maintained until the semiconductor device wafer is used, and can be removed at the necessary stage.

[0289] A semiconductor device manufacturing wafer having a layer other than any of the substrate, adhesive layer, intermediate layer, film adhesive and release film can be manufactured by adding a step of forming and depositing such other layer at an appropriate time in the above manufacturing method.

[0290] ◇Method of using semiconductor device manufacturing wafer (method of manufacturing semiconductor wafer with film adhesive) The aforementioned semiconductor device manufacturing wafer can be used in the manufacturing process of semiconductor devices, specifically in the manufacturing of semiconductor wafers with film adhesive. Hereinafter, the method of using the aforementioned semiconductor device manufacturing wafer (method of manufacturing semiconductor wafer with film adhesive) will be described in detail with reference to the drawings.

[0291] (First Embodiment) Figures 3A, 3B, and 3C are schematic cross-sectional views illustrating an example of a method of using a semiconductor device manufacturing wafer, showing the case where the semiconductor device manufacturing wafer is attached to a semiconductor wafer. In this method, the semiconductor device manufacturing wafer is used as a die-cutting wafer. Here, the semiconductor device manufacturing wafer 101 shown in Figure 1 is used as an example to illustrate its method of use.

[0292] First, as shown in FIG3A, the semiconductor device manufacturing wafer 101 with the release film 15 removed is heated while the film-like adhesive 14 therein is attached to the inner surface 9b' of the semiconductor wafer 9'. The symbol 9a' indicates the circuit formation surface of the semiconductor wafer 9.

[0293] There is no particular limitation on the heating temperature during the attachment of the semiconductor device manufacturing wafer 101. However, from the viewpoint of improving the heating and attachment stability of the semiconductor device manufacturing wafer 101, 40°C to 70°C is preferred.

[0294] The maximum value of the width W13 of the intermediate layer 13 in the semiconductor device manufacturing wafer 101 and the maximum value of the width W14 of the film adhesive 14 are exactly the same as the maximum value of the width W9' of the semiconductor wafer 9', or although they are not the same, the error is slight and they are approximately equal.

[0295] Next, the stack of semiconductor device manufacturing wafer 101 and semiconductor wafer 9' obtained above is cut by cutting with a blade from the circuit forming surface 9a' side of semiconductor wafer 9', thereby dividing semiconductor wafer 9 and cutting film adhesive 14.

[0296] Blade cutting can be performed using known methods. For example, the area near the periphery of the un-deposited intermediate layer 13 and the film adhesive 14 on the first surface 12a of the adhesive layer 12 in the semiconductor device manufacturing wafer 101 (the aforementioned non-deposited area) can be fixed to a jig such as an annular frame (not shown), and then a blade can be used to cleave the semiconductor wafer 9' and cut the film adhesive 14.

[0297] Through this step, as shown in FIG3B, a plurality of semiconductor wafers 914 with film-like adhesive are obtained, which are formed by having a semiconductor wafer 9 and a cut film-like adhesive 140 disposed on the inner surface 9b of the semiconductor wafer 9. These semiconductor wafers 914 with film-like adhesive are arranged in an orderly manner and fixed on the intermediate layer 13 in the laminate 10, forming a group of semiconductor wafers 910 with film-like adhesive. The inner surface 9b of the semiconductor wafer 9 corresponds to the inner surface 9b' of the semiconductor wafer 9'. In addition, in FIG3A, FIG3B and FIG3C, the symbol 9a represents the circuit formation surface of the semiconductor wafer 9, which corresponds to the circuit formation surface 9a' of the semiconductor wafer 9'.

[0298] When cutting with a blade, it is preferable to use a blade to cut the entire area of ​​the semiconductor wafer 9' in the thickness direction, and to cut the semiconductor device manufacturing wafer 101 from the first surface 14a of the film adhesive 14 to the middle area of ​​the intermediate layer 13, thereby cutting the entire area of ​​the film adhesive 14 in the thickness direction without cutting into the adhesive layer 12. That is, when cutting with a blade, it is preferable to use a blade to cut the stack of the semiconductor device manufacturing wafer 101 and the semiconductor wafer 9' along these stacking directions, from the circuit forming surface 9a' of the semiconductor wafer 9' to at least the first surface 13a of the intermediate layer 13, without cutting into the side of the intermediate layer 13 opposite to the first surface 13a (i.e., the contact surface with the adhesive layer 12).

[0299] In this step, the blade can be easily prevented from reaching the substrate 11, thereby suppressing the generation of cutting chips from the substrate 11. In addition, the fact that the main component of the intermediate layer 13 cut by the blade is a non-silicone resin with a weight average molecular weight of 100,000 or less, especially with a weight average molecular weight of 100,000 or less, also suppresses the generation of cutting chips from the intermediate layer 13.

[0300] The cutting conditions of the blade can be adjusted appropriately according to the purpose, and there are no particular limitations. Generally, the blade rotation speed is best between 15,000 rpm and 50,000 rpm, and the blade movement speed is best between 5 mm / sec and 75 mm / sec.

[0301] After cutting with a blade, as shown in FIG3C, the semiconductor wafer 914 with film-like adhesive is picked up by peeling it off from the intermediate layer 13 in the laminate 10. Here, the peeling mechanism 7, such as a vacuum clamp, is used to peel the semiconductor wafer 914 with film-like adhesive in the direction of arrow P. However, the peeling mechanism 7 is not shown in cross-section here. The semiconductor wafer 914 with film-like adhesive can be picked up using known methods.

[0302] As a method for picking up the semiconductor wafer 914 with the film adhesive, it can also be a method of using the peeling mechanism 7 to adsorb the surface of the semiconductor wafer 914 and pull it upward. Alternatively, it can be a method of using the adsorption stage 40 to adsorb the back side 11b of the substrate, while the entire area of ​​the semiconductor device manufacturing wafer having the interlayer and the film adhesive is lifted from the substrate side by the adsorption stage and the lifting member, and then using the peeling mechanism 7 to adsorb the surface of the semiconductor wafer 914 and pull it upward.

[0303] When using the adsorption stage 40 for pickup as described above, by ensuring that the maximum cross-sectional height of the back surface 11b of the substrate 11 is 2000 nm or less, the adsorption between the back surface 11b of the substrate 11 and the adsorption stage 40 can be suppressed, thereby improving pickup suitability. Furthermore, by ensuring that the surface roughness of the back surface 11b of the substrate 11 is 200 nm or less, the adsorption between the back surface 11b of the substrate 11 and the adsorption stage 40 can be suppressed, thereby improving pickup suitability.

[0304] When the silicon concentration of the first surface 13a of the intermediate layer 13 is 1% to 20%, the semiconductor wafer 914 with the film-like adhesive can be picked up more easily. When the intermediate layer 13 contains, for example, the ethylene-vinyl acetate copolymer as the aforementioned non-silicone resin and the silicate compound as the aforementioned additive, and the content of the ethylene-vinyl acetate copolymer in the intermediate layer is 90% to 99.99% by mass relative to the total mass of the intermediate layer, and the content of the silicate compound in the intermediate layer is 0.01% to 10% by mass relative to the total mass of the intermediate layer, the semiconductor wafer 914 with the film-like adhesive can be picked up more easily.

[0305] In the previously described methods for manufacturing semiconductor wafers with film-like adhesives, a preferred embodiment may be provided, for example, a method for manufacturing semiconductor wafers with film-like adhesives. The aforementioned semiconductor wafer with film-like adhesives comprises a semiconductor wafer and a film-like adhesive disposed on the inner surface of the aforementioned semiconductor wafer. The aforementioned semiconductor device manufacturing wafer comprises the aforementioned substrate, adhesive layer, intermediate layer, and film-like adhesive. The aforementioned manufacturing method includes the following steps: while heating the aforementioned semiconductor device manufacturing wafer, attaching the aforementioned film-like adhesive from the semiconductor device manufacturing wafer to the inner surface of the aforementioned semiconductor wafer; and attaching the aforementioned film-like adhesive to the inner surface of the semiconductor wafer. The semiconductor wafer is cut into the entire thickness direction from the circuit formation surface side to form the semiconductor wafer, thereby fabricating the semiconductor chip. The semiconductor device manufacturing wafer is cut into the thickness direction from the film adhesive side to the middle region of the intermediate layer to cut the film adhesive without cutting into the adhesive layer, thereby obtaining a group of semiconductor wafers with film adhesive, in which a plurality of semiconductor wafers with film adhesive are neatly arranged on the intermediate layer; and the step of picking up the semiconductor wafers with film adhesive by peeling them off from the intermediate layer (sometimes referred to as "manufacturing method 1" in this specification).

[0306] Alternatively, after obtaining the aforementioned semiconductor wafer group with film-like adhesive, before picking up the aforementioned semiconductor wafer with film-like adhesive, the aforementioned laminated wafer can be extended in a parallel direction relative to the aforementioned intermediate layer side (first surface) of the aforementioned adhesive layer, and this state can be maintained while heating the peripheral portion of the aforementioned laminated wafer that does not have the aforementioned film-like adhesive (the semiconductor wafer group with film-like adhesive). By adopting this method, the distance between adjacent semiconductor wafers (i.e., the cut width) can be maintained sufficiently wide and highly uniformly on the aforementioned laminated wafer while shrinking the aforementioned peripheral portion. In addition, it is easier to pick up semiconductor wafers with film-like adhesive.

[0307] (Second Embodiment) Figures 4A, 4B, and 4C are cross-sectional views illustrating an example of a method for manufacturing a semiconductor wafer, which is used as a semiconductor device manufacturing wafer, showing the manufacturing of a semiconductor wafer by dicing accompanied by the formation of a modifier layer on the semiconductor wafer. Figures 5A, 5B, and 5C are cross-sectional views illustrating another example of a method for using a semiconductor device manufacturing wafer, showing the use of the semiconductor device manufacturing wafer after it has been attached to a semiconductor wafer. In this method, the semiconductor device manufacturing wafer is used as a wafer bonding device. Here, the semiconductor device manufacturing wafer 101 shown in Figure 1 is used as an example to illustrate its method of use.

[0308] First, before using the semiconductor device manufacturing wafer 101, as shown in FIG4A, a semiconductor wafer 9' is prepared, and a back polishing tape (sometimes also called a "surface protection tape") 8 is attached to the circuit forming surface 9a of the semiconductor wafer 9'. In FIG4A, FIG4B and FIG4C, the symbol W9' indicates the width of the semiconductor wafer 9'.

[0309] Next, laser light is irradiated with a focal point set inside the semiconductor wafer 9' (illustration omitted), thereby forming a modified layer 90' inside the semiconductor wafer 9' as shown in FIG4B. It is preferable that the aforementioned laser light irradiates the semiconductor wafer 9' from the inner surface 9b' side.

[0310] The focal position at this time is the predetermined position for the dicing (cutting) of the semiconductor wafer 9', which is set by obtaining semiconductor chips of target size, shape and number from the semiconductor wafer 9'.

[0311] Next, the inner surface 9b' of the semiconductor wafer 9' is ground using a grinding machine (illustration omitted). In this way, the thickness of the semiconductor wafer 9' is adjusted to the target value, and by using the force applied to the semiconductor wafer 9 during grinding, the semiconductor wafer 9' is divided at the formation site of the modified layer 90', and a plurality of semiconductor wafers 9 are fabricated as shown in FIG4C.

[0312] The modified layer 90' of the semiconductor wafer 9' is different from other parts of the semiconductor wafer 9'. It is degraded and weakened by laser light irradiation. Therefore, by applying force to the semiconductor wafer 9' on which the modified layer 90' is formed, the modified layer 90' will be subjected to force, and the semiconductor wafer 9' will break at this part of the modified layer 90' to obtain a plurality of semiconductor wafers 9.

[0313] By means of the above method, the object of use of semiconductor device manufacturing wafer 101, namely semiconductor wafer 9, is obtained. More specifically, by means of this step, a semiconductor wafer group 901 is obtained in which a plurality of semiconductor wafers 9 are arranged in an orderly manner and fixed on the back polishing belt 8.

[0314] When the semiconductor wafer assembly 901 is viewed from above, the planar shape formed by the outermost portion connecting the semiconductor wafer assembly 901 (sometimes referred to in this specification as the "planar shape of the semiconductor wafer assembly") is exactly the same as the planar shape when viewed from above the semiconductor wafer 9', or the differences between these planar shapes are so slight as to be negligible. The aforementioned planar shape of the semiconductor wafer assembly 901 can be said to be approximately the same as the aforementioned planar shape of the semiconductor wafer 9'. Therefore, the width of the aforementioned planar shape of the semiconductor wafer assembly 901, as shown in Figure 4C, can be considered to be the same as the width W9' of the semiconductor wafer 9'. Furthermore, the maximum value of the width of the aforementioned planar shape of the semiconductor wafer assembly 901 can be considered to be the same as the maximum value of the width W9' of the semiconductor wafer 9'.

[0315] In addition, although this shows the case where a semiconductor wafer 9 is fabricated from a semiconductor wafer 9' according to the purpose, depending on the grinding conditions of the inner surface 9b' of the semiconductor wafer 9', sometimes a part of the semiconductor wafer 9' is not divided into a semiconductor wafer 9.

[0316] Next, using the semiconductor wafer 9 (semiconductor wafer group 901) obtained above, a semiconductor wafer with a film-like adhesive is manufactured. First, as shown in FIG5A, while heating a semiconductor device manufacturing wafer 101 with the release film 15 removed, the film-like adhesive 14 in the semiconductor device manufacturing wafer 101 is attached to the inner surface 9b of all semiconductor wafers 9 in the semiconductor wafer group 901. At this time, the film-like adhesive 14 can also be attached to semiconductor wafers that have not been completely divided.

[0317] The maximum value of the width W13 of the intermediate layer 13 in the semiconductor device manufacturing wafer 101 and the maximum value of the width W14 of the film adhesive 14 are exactly the same as the maximum value of the width W9' of the semiconductor wafer 9' (in other words, the width of the semiconductor wafer group 901), or, although not the same, the error is slight and they are approximately equal.

[0318] At this time, the film adhesive 14 (semiconductor device manufacturing wafer 101) is attached to the semiconductor wafer group 901 in the same way as the case of attaching the film adhesive 14 (semiconductor device manufacturing wafer 101) to the semiconductor wafer 9' in the aforementioned manufacturing method 1, except that the semiconductor wafer 9 is replaced by the semiconductor wafer group 901.

[0319] Next, the back-side polishing tape 8 is removed from the semiconductor wafer group 901 in this fixed state. Furthermore, as shown in FIG5B, while cooling the semiconductor device manufacturing wafer 101, the surface of the semiconductor device manufacturing wafer 101 (e.g., the first surface 12a of the adhesive layer 12) is stretched in a parallel direction to extend it. Here, the extension direction of the semiconductor device manufacturing wafer 101 is indicated by arrow E1. By extending it in this manner, the film-like adhesive 14 is cut along the outer periphery of the semiconductor wafer 9. More specifically, the extension step may also be as described below.

[0320] Through the extended step, a plurality of semiconductor wafers 914 with film-like adhesive can be obtained, comprising a semiconductor wafer 9 and a cut film-like adhesive 140 disposed on the inner surface 9b of the semiconductor wafer 9. These semiconductor wafers 914 with film-like adhesive are arranged and fixed on the intermediate layer 13 of the laminate 10, forming a group of semiconductor wafers 910 with film-like adhesive. The semiconductor wafers 914 with film-like adhesive and the group of semiconductor wafers 910 with film-like adhesive obtained here are substantially the same as the semiconductor wafers 914 with film-like adhesive and the group of semiconductor wafers 910 with film-like adhesive obtained by manufacturing method 1 as described above.

[0321] As mentioned above, when a portion of the semiconductor wafer 9' is not divided into semiconductor chips 9 during the dicing process, this step will divide this portion into semiconductor chips.

[0322] In the expansion step, it is preferable to set the temperature of the semiconductor device manufacturing wafer 101 to below 0°C for expansion, and more preferably to set the temperature of the semiconductor device manufacturing wafer 101 to -5°C to 5°C for expansion. By cooling and expanding the semiconductor device manufacturing wafer 101 in this manner (performing cold expansion), the film adhesive 14 can be cut more easily and with higher precision.

[0323] The expansion step can be performed using known methods. For example, the area near the periphery of the un-deposited intermediate layer 13 and film adhesive 14 on the first surface 12a of the adhesive layer 12 in the semiconductor device manufacturing wafer 101 (the aforementioned non-deposited area) can be fixed to a jig such as an annular frame (not shown). While adsorbing the back side 11b of the substrate 11 of the semiconductor device manufacturing wafer 101 with an adsorption stage 40, the entire area of ​​the un-deposited intermediate layer 13 and film adhesive 14 of the semiconductor device manufacturing wafer 101 can be pushed upward from the substrate 11 side in the direction from the substrate 11 to the adhesive layer 12 using the adsorption stage 40 and the lifting member (not shown), thereby expanding the semiconductor device manufacturing wafer 101.

[0324] The expansion speed (the rising speed of the adsorption stage and the upper member) in the expansion step is, for example, 1 mm / s to 400 mm / s. Furthermore, the expansion amount in the expansion step can be, for example, 3 mm to 16 mm. Next, the adsorption stage 40 and the upper member are lowered to release the expansion state of the expansion step.

[0325] Typically, the adsorption stage 40 has a gap extending through the thickness direction. The adsorption stage is depressurized on the opposite side of the side that contacts the semiconductor device manufacturing wafer 101, thereby adsorbing and fixing the semiconductor device manufacturing wafer 101 by the adsorption stage 40.

[0326] By ensuring that the maximum cross-sectional height of the back surface 11b of the substrate 11 is 2000 nm or less, the adsorption between the back surface 11b of the substrate 11 and the adsorption stage 40 can be suppressed during the extension step. By ensuring that the surface roughness of the back surface 11b of the substrate 11 is 200 nm or less, the adsorption between the back surface 11b of the substrate 11 and the adsorption stage 40 can be suppressed during the extension step.

[0327] As shown in FIG5B, in the expansion step, in the first surface 12a of the adhesive layer 12, the non-deposited intermediate layer 13 and the film adhesive 14 are generally parallel to the first surface 13a of the intermediate layer 13. However, as described above, in the expanded state by being pushed up by the semiconductor device manufacturing wafer 101, the aforementioned non-deposited area includes an inclined surface (as it approaches the outer periphery of the adhesive layer 12, the height decreases in the opposite direction to the aforementioned upward direction).

[0328] In the extended step, the semiconductor device manufacturing wafer 101 has an intermediate layer 13 (in other words, the film adhesive 14 before cutting is disposed on the intermediate layer 13), and the film adhesive 14 can be cut with high precision at the target area (in other words, along the outer periphery of the semiconductor wafer 9), which can suppress cutting defects.

[0329] After expansion, as shown in FIG5C, the semiconductor wafer 914 with film-like adhesive is peeled off from the intermediate layer 13 in the laminate 10 for pickup. The pickup at this time can be performed in the same way as the pickup in manufacturing method 1 described above, and the pickup suitability is also the same as the pickup suitability in manufacturing method 1.

[0330] For example, even in this step, when the silicon concentration of the first surface 13a of the intermediate layer 13 is 1% to 20%, it is easier to pick up the semiconductor wafer 914 with the film-like adhesive. Furthermore, when the intermediate layer 13 contains, for example, the ethylene-vinyl acetate copolymer as the aforementioned non-silicone resin and the silicate compound as the aforementioned additive, and the content of the ethylene-vinyl acetate copolymer in the intermediate layer is 90% to 99.99% by mass relative to the total mass of the intermediate layer, and the content of the silicate compound in the intermediate layer is 0.01% to 10% by mass relative to the total mass of the intermediate layer, it is easier to pick up the semiconductor wafer 914 with the film-like adhesive.

[0331] In the previously described methods for manufacturing semiconductor wafers with film-like adhesives, a preferred embodiment is, for example, a method for manufacturing semiconductor wafers with film-like adhesives. The aforementioned semiconductor wafer with film-like adhesives comprises a semiconductor wafer and a film-like adhesive disposed on the inner surface of the aforementioned semiconductor wafer. The aforementioned semiconductor device manufacturing wafer comprises the aforementioned substrate, adhesive layer, intermediate layer, and film-like adhesive. The manufacturing method includes the following steps: irradiating laser light with a focal point set inside the semiconductor wafer to form a modified layer inside the aforementioned semiconductor wafer; grinding the inner surface of the aforementioned semiconductor wafer after the formation of the modified layer, and using the grinding force applied to the aforementioned semiconductor wafer, dividing the aforementioned semiconductor wafer at the formation site of the modified layer to obtain a group of semiconductor wafers in a neatly arranged state; and while heating the aforementioned semiconductor device manufacturing wafer, attaching the aforementioned film-like adhesive from the semiconductor device manufacturing wafer to the aforementioned semiconductor wafer. The steps include: cooling the semiconductor device manufacturing wafer attached to the semiconductor wafer, while using an adsorption stage to adsorb the surface opposite to the side of the substrate having the adhesive layer, and lifting the entire area of ​​the semiconductor device manufacturing wafer having the intermediate layer and the film adhesive from the substrate side using the adsorption stage and the lifting member, stretching it in a parallel direction relative to the surface of the film adhesive, thereby cutting the film adhesive along the outer periphery of the semiconductor wafer, and obtaining a group of semiconductor wafers with film adhesive arranged neatly on the intermediate layer; heating the periphery of the semiconductor wafers without the film adhesive (group of semiconductor wafers with film adhesive) in the stretched laminated wafer; and picking up the semiconductor wafers with film adhesive pulled off the intermediate layer (sometimes referred to as "manufacturing method 2" in this specification).

[0332] Up to now, both manufacturing methods 1 and 2 have been described using the semiconductor device manufacturing wafer 101 shown in FIG. 1 as an example, but other semiconductor device manufacturing wafers of this embodiment can also be used in the same way. In this case, other steps may be appropriately added as needed based on the differences in the structure between this semiconductor device manufacturing wafer and the semiconductor device manufacturing wafer 101, and the semiconductor device manufacturing wafer may be used.

[0333] By heating the periphery of a semiconductor wafer without a film-like adhesive (a group of semiconductor wafers with a film-like adhesive) in a laminated wafer, the periphery can be contracted while maintaining a sufficiently wide and highly uniform distance (i.e., cut width) between adjacent semiconductor wafers on the laminated wafer. In addition, semiconductor wafers with film-like adhesives can be picked up more easily.

[0334] (Third Embodiment) Figures 6A, 6B, and 6C are cross-sectional views illustrating an example of a method for manufacturing semiconductor wafers, which is used to schematically explain the application of the semiconductor device manufacturing wafer. They show the process of manufacturing semiconductor wafers by cutting semiconductor wafers using methods such as the Dicing before Grinding (DBG) method.

[0335] In this method, as shown in FIG6A, for a semiconductor wafer 9', a groove 90' ​​is formed by half-cutting a surface 9a' of the circuit forming surface of the semiconductor wafer 9' using a blade cutting, laser cutting, water cutting or other methods.

[0336] Next, as shown in FIG6B, the inner surface 9b' opposite to the aforementioned surface (circuit forming surface) 9a' of the semiconductor wafer 9' is ground. The grinding of the inner surface 9b' can be performed by a known method (e.g., using a grinding machine 62). As shown here, the grinding of the inner surface 9b' is preferably performed by attaching a back-side grinding belt 8 to the aforementioned surface 9a' of the semiconductor wafer 9'.

[0337] Furthermore, by grinding the aforementioned inner surface 9b' until the trench 90' is reached, as shown in FIG6C, a plurality of semiconductor wafers 9 are obtained from the semiconductor wafer 9'. The aforementioned inner surface 9b' of the semiconductor wafer 9' is the inner surface 9b of the semiconductor wafer 9, that is, the surface used to apply the film-like adhesive 14. In FIG6A and FIG6C, the symbol W9' represents the width of the semiconductor wafer 9'.

[0338] By means of the above method, the object of use of semiconductor device manufacturing wafer 101, namely semiconductor wafer 9, is obtained. More specifically, by means of this step, a semiconductor wafer group 902 is obtained in which a plurality of semiconductor wafers 9 are arranged in an orderly manner and fixed on the back polishing belt 8.

[0339] In the manufacturing method of the third embodiment, in addition to replacing the semiconductor wafer group 901 in the manufacturing method of the second embodiment with the semiconductor wafer group 902, the semiconductor wafer with film adhesive can also be obtained by extension in the same way.

[0340] The extension in the third embodiment of the manufacturing method can be carried out in the same way as the extension in the manufacturing method 2 described above, and the extension adaptability is also the same as that in the manufacturing method 2.

[0341] The picking in the third embodiment of the manufacturing method can be performed in the same way as the picking in the manufacturing method 1 described above, and the picking suitability is also the same as that in the manufacturing method 1.

[0342] In the aforementioned method for manufacturing a semiconductor wafer with a film-like adhesive, as a preferred embodiment, a method for manufacturing a semiconductor wafer with a film-like adhesive can be provided, wherein the semiconductor wafer with a film-like adhesive comprises a semiconductor wafer and a film-like adhesive disposed on the inner surface of the semiconductor wafer, and the semiconductor device manufacturing wafer comprises the aforementioned substrate, adhesive layer, intermediate layer and film-like adhesive; the aforementioned manufacturing method includes the following steps: halving a semiconductor wafer to form a trench on one surface of the semiconductor wafer that serves as the circuit formation surface; grinding the inner surface of the semiconductor wafer after the trench is formed down to the trench formation portion, thereby dividing the semiconductor wafer at the trench formation portion to obtain a semiconductor wafer group in which a plurality of semiconductor wafers are arranged in an orderly manner; while heating the semiconductor device manufacturing wafer, attaching the film-like adhesive in the semiconductor device manufacturing wafer to all semiconductor wafers in the semiconductor wafer group. The steps include: cooling the semiconductor device fabrication wafer attached to the aforementioned semiconductor wafer, simultaneously using an adsorption stage to adsorb the surface opposite to the side of the substrate containing the aforementioned adhesive layer, and lifting the entire area of ​​the semiconductor device fabrication wafer containing the aforementioned intermediate layer and the aforementioned film adhesive from the substrate side using the aforementioned adsorption stage and lifting member, stretching it in a parallel direction relative to the surface of the film adhesive, thereby cutting the aforementioned film adhesive along the outer periphery of the aforementioned semiconductor wafer, obtaining a group of semiconductor wafers with film adhesive neatly arranged on the aforementioned intermediate layer; heating the peripheral portion of the semiconductor wafers without the aforementioned film adhesive (the group of semiconductor wafers with film adhesive) in the stretched laminated wafer; and picking up the semiconductor wafers with film adhesive pulled away from the aforementioned intermediate layer. [Example]

[0343] Hereinafter, the present invention will be described in more detail by way of specific embodiments. However, the present invention is not limited to the embodiments shown below.

[0344] [Raw Materials for Adhesive Composition] The raw materials used in the manufacture of the adhesive composition are as follows. [Polymer Component (a)] (a)-1: Acrylic resin (weight average molecular weight 800,000, glass transition temperature 9°C) obtained by copolymerizing methyl acrylate (95 parts by mass) and 2-hydroxyethyl acrylate (5 parts by mass). [Epoxy Resin (b1)] (b1)-1: Cresol phenolic varnish-type epoxy resin with acrylamide added ("CNA147" manufactured by Nippon Kayaku Co., Ltd., epoxy equivalent 518 g / eq, number average molecular weight 2100, unsaturated group content equal to epoxy group content). [Thermosetting Agent (b2)] (b2)-1: Aryl alkyl phenolic resin (Milex XLC-4L manufactured by Mitsui Chemicals, quantity average molecular weight 1100, softening point 63℃) [Filler (d)] (d)-1: Spherical silica (YA050C-MJE manufactured by Admatechs, average particle size 50nm, methacrylate silane treated product) [Coupling Agent (e)] (e)-1: Silane coupling agent, 3-glycidoxypropylmethyldiethoxysilane (KBE-402 manufactured by Shin-Etsu Polysiloxane Co., Ltd.) [Crosslinking Agent (f)] (f)-1: Toluene diisocyanate crosslinking agent (Coronate L manufactured by Tosoh Co., Ltd.)

[0345] [Reference Example 1] [Manufacturing and Evaluation of Wafers for Semiconductor Device Manufacturing (1)] [Manufacturing of Substrate] Low-density polyethylene (LDPE, manufactured by Sumitomo Chemical Co., Ltd. "Sumikasen L705") was melted using an extruder, and the melt was extruded by a T-die method. The extrudate was then stretched in a biaxial manner using a cooling roller to obtain a substrate made of LDPE (110 μm thick).

[0346] [Preparation of Adhesive Layer] A non-energy-line curable adhesive composition is prepared, the non-energy-line curable adhesive composition containing an acrylic resin (Oribain BPS 6367X manufactured by Toyo-Chem Co., Ltd.) (100 parts by weight) as an adhesive resin (I-1a), and a crosslinking agent (BXX 5640 manufactured by Toyo-Chem Co., Ltd.) (1 part by weight).

[0347] Next, a release film with one side treated with polysiloxane was used to peel off the release film. The adhesive composition obtained above was applied to the peeled side and heated and dried at 100°C for 2 minutes to produce a non-energy-line hardening adhesive layer (10 μm thick).

[0348] [Preparation of Intermediate Layer] At room temperature, 15g of ethylene-vinyl acetate copolymer (EVA, weight average molecular weight 30,000, content of constituent units derived from vinyl acetate 25% by mass) was dissolved in 85g of tetrahydrofuran. 1.5g of a silicate compound (polydimethylsiloxane, BYK-333 manufactured by BYK Chemie Japan, with 45 to 230 constituent units represented by the formula "-Si(-CH3)2-O-" per molecule) was added to the resulting solution and stirred to prepare a composition for forming an intermediate layer.

[0349] A release film with a single side treated with polysiloxane was used to perform a release treatment. The intermediate layer composition obtained above was applied to the release treatment side and dried at 70°C for 5 minutes to form an intermediate layer (thickness 20 μm).

[0350] [Preparation of film adhesive] A thermosetting adhesive composition containing polymer component (a)-1 (100 parts by weight), epoxy resin (b1)-1 (10 parts by weight), thermosetting agent (b2)-1 (1.5 parts by weight), filler (d)-1 (75 parts by weight), coupling agent (e)-1 (0.5 parts by weight), and crosslinking agent (f)-1 (0.5 parts by weight) is prepared.

[0351] Next, a release film with one side treated with polysiloxane was used to peel off the release film. The adhesive composition obtained above was applied to the peeled side and heated and dried at 80°C for 2 minutes to produce a thermosetting film adhesive (7 μm thick).

[0352] [Manufacturing of a wafer for semiconductor device manufacturing] The exposed surface opposite to the side having the release film in the adhesive layer obtained above is bonded to a surface of the substrate obtained above, thereby fabricating a first intermediate laminate with a release film (in other words, a support sheet with a release film). The exposed surface opposite to the side having the release film in the film-like adhesive obtained above is bonded to the exposed surface opposite to the side having the release film in the intermediate layer obtained above, thereby fabricating a second intermediate laminate with a release film (a laminate of release film, intermediate layer, film-like adhesive, and release film).

[0353] Next, the second intermediate laminate with a release film is punched from the release film on the intermediate layer side to the film adhesive using a cutting knife to remove unwanted parts, thereby producing a processed product of the second intermediate laminate with a release film. The release film on the film adhesive side has a planar circular (diameter 305mm) film adhesive (thickness 7μm), an intermediate layer (thickness 20μm) and a release film stacked sequentially in the thickness direction.

[0354] Next, the release film is removed from the first intermediate laminate with the release film obtained above, exposing one side of the adhesive layer. Furthermore, the circular release film is removed from the second intermediate laminate with the release film obtained above, exposing one side of the intermediate layer. Next, the newly formed exposed surface of the adhesive layer in the first intermediate laminate is bonded to the newly formed exposed surface of the intermediate layer in the second intermediate laminate. For the substrate and adhesive layer (i.e., support sheets) in the laminate obtained thereby, with the planar shape of these support sheets being circular (diameter 370 mm) and the circular film adhesive and intermediate layer (diameter 305 mm) being concentric, a cutting blade (370 mm) is used to punch away unwanted portions from the substrate side. By means of the above method, a semiconductor device manufacturing wafer with a release film is obtained by sequentially depositing a substrate (110 μm thick), an adhesive layer (10 μm thick), an intermediate layer (20 μm thick), a film adhesive (7 μm thick), and a release film in the thickness direction.

[0355] [Calculation of Silicon Concentration Ratio on the Surface of the Intermediate Layer on the Adhesive Side] During the manufacturing process of the aforementioned semiconductor device wafer, the exposed surface of the intermediate layer before bonding with the adhesive layer was analyzed by XPS to determine the concentration (atomic %) of carbon (C), oxygen (O), nitrogen (N), and silicon (Si). The ratio (%) of silicon concentration to the total concentration (of carbon, oxygen, nitrogen, and silicon) was calculated based on the measured values. XPS analysis was performed using an X-ray photoelectron spectrophotometer (Ulvac Quantra SXM) with an irradiation angle of 45°, an X-ray beam diameter of 20 μm φ, and an output of 4.5 W. The results, along with the ratio (%) of the concentrations of other elements, are displayed in the "Ratio (%) of Element Concentration in the Intermediate Layer" column of Table 1.

[0356] [Evaluation of the effectiveness in suppressing chip generation during blade cutting][Manufacturing of silicon wafer clusters with film-like adhesive] The release film was removed from the semiconductor device manufacturing wafer obtained above. Using a silicon wafer (300 mm in diameter and 75 μm in thickness) whose inner surface had been dry-polished, the semiconductor device manufacturing wafer was attached to the inner surface (polished surface) of the silicon wafer using a bonding machine (Adwill RAD2500 manufactured by Lintec Corporation) while heated to 60°C, using the film-like adhesive of the semiconductor device manufacturing wafer. In this way, a laminate was obtained by sequentially stacking a substrate, an adhesive layer, an intermediate layer, a film-like adhesive, and a silicon wafer in the thickness direction (a laminate consisting of the aforementioned laminated wafer, film-like adhesive, and silicon wafer sequentially stacked in the thickness direction).

[0357] Next, the area near the periphery of the first side of the adhesive layer in the aforementioned laminate, where no intermediate layer is provided (the aforementioned non-laminated area), is fixed to a wafer dicing ring frame. Then, a dicing apparatus (Disco's "DFD6361") is used to dice the silicon wafer, thereby cutting the film adhesive and obtaining a silicon wafer with a size of 8mm × 8mm. The dicing is performed by setting the blade rotation speed to 30,000 rpm and the blade travel speed to 30 mm / sec. For a semiconductor device manufacturing wafer, the blade cuts from the silicon wafer attachment surface of the film adhesive to the middle area of ​​the intermediate layer (i.e., the entire area in the thickness direction of the film adhesive and the middle area of ​​the intermediate layer from the film adhesive side to the middle). As the cutting blade, Disco's "Z05-SD2000-D1-90 CC" was used. Through the above operations, a group of silicon wafers with film-like adhesive, which are provided on the inner surface of the silicon wafers after cutting, are obtained and are neatly arranged and fixed on the intermediate layer of the aforementioned laminate by the film-like adhesive.

[0358] [Evaluation of the effectiveness in suppressing chip generation] The silicon wafer array with film-like adhesive obtained above was observed from above the silicon wafer side using a digital microscope (Keyence VH-Z100) to confirm whether or not chips were generated. Furthermore, cases where no chips were generated were classified as "A", and cases where a small amount of chips were generated were classified as "B". The results are shown in Table 1.

[0359] [Evaluation of the severability of the film-like adhesive during expansion][Manufacturing of a silicon wafer array with film-like adhesive] A silicon wafer with a planar circular shape, a diameter of 300 mm, and a thickness of 775 μm was used. A back-grinding tape (Lintec "Adwill E-3100TN") was attached to one side of the silicon wafer. Next, a laser irradiation device (Disco "DFL73161") was used to irradiate the silicon wafer with a focal point set inside the silicon wafer, thereby forming a modified layer inside the silicon wafer. At this time, the aforementioned focal point was set so that a plurality of silicon wafers with a size of 8 mm × 8 mm were obtained from the silicon wafer. In addition, the laser irradiated the silicon wafer from the other side (the side without the back-grinding tape attached). Next, the other side of the silicon wafer is ground using a grinding machine to adjust the thickness of the silicon wafer to 30 μm. Using the force applied during grinding, the silicon wafer is diced at the site where the modified layer is formed, thus fabricating a plurality of silicon wafers. This results in a group of silicon wafers that are neatly arranged and fixed on the back-side grinding belt.

[0360] Next, using a bonding machine (Lintec's "Adwill RAD2500"), the semiconductor device manufacturing wafer obtained above is heated to 60°C while the film adhesive of the semiconductor device manufacturing wafer is attached to the other side (in other words, the polished side) of all the aforementioned silicon wafers (silicon wafer group). Next, the area near the periphery of the first side of the adhesive layer of the semiconductor device manufacturing wafer attached to the silicon wafer group, where no intermediate layer is provided (the aforementioned non-deposition area), is fixed to the wafer dicing ring frame.

[0361] Next, the back-side polishing tape is removed from the fixed silicon wafer group. Next, using a fully automated die separator (Disco's "DDS2300"), the semiconductor device manufacturing wafer is cooled at 0°C while being extended in a direction parallel to the surface of the semiconductor device manufacturing wafer, thereby cutting the film adhesive along the outer periphery of the silicon wafer. At this time, by fixing the periphery of the semiconductor device manufacturing wafer, the entire area of ​​the semiconductor device manufacturing wafer with the interlayer and film adhesive is pushed upwards from the substrate side at a height of 15 mm to extend it. This results in a silicon wafer group with film adhesive, in which a plurality of silicon wafers with film adhesive, having been cut and fixed on the other side (polished surface), are neatly arranged on the interlayer.

[0362] Next, after temporarily releasing the expansion of the semiconductor device manufacturing wafer, at room temperature, the laminate (i.e., the aforementioned laminated wafer) formed by the deposition of the substrate, adhesive layer, and intermediate layer is expanded in a direction parallel to the first surface of the adhesive layer. Furthermore, while maintaining this expanded state, the periphery of the silicon wafer in the aforementioned laminated wafer that does not contain a film-like adhesive is heated. This causes the aforementioned periphery to shrink, and the cut width between adjacent silicon wafers on the aforementioned laminated wafer is maintained at a certain value or higher.

[0363] [Evaluation of the Cutting Performance of the Film-like Adhesive] During the manufacture of the aforementioned silicon wafer array with film-like adhesive, a digital microscope (Keyence VH-Z100) was used to observe the obtained silicon wafer array with film-like adhesive from above the silicon wafer side. Furthermore, the number of cut lines was confirmed, and the cutting performance of the film-like adhesive was evaluated according to the following evaluation criteria. The cut lines are defined as: multiple cut lines extending in one direction that would necessarily form under the assumption of normal cutting of the film-like adhesive by the expansion of the semiconductor device manufacturing wafer; and cut lines that were not actually formed and those that were incompletely formed, among multiple cut lines extending in a direction orthogonal to that direction. The results are shown in Table 1. (Evaluation Criterion) A: The total number of cut lines of film-like adhesive that were not actually formed and cut lines of film-like adhesive that were incompletely formed is 5 or less. B: The total number of cut lines of the actual unformed adhesive film and the cut lines of the incompletely formed adhesive film is 6 or more.

[0364] [Evaluation of Pickup Performance of Silicon Wafers with Film-like Adhesive after Extension] After evaluating the cutability of the aforementioned film-like adhesive, a group of silicon wafers with film-like adhesive and a die-attachment device (PU100 manufactured by Fasford Technology) were used to pick up silicon wafers with film-like adhesive from the intermediate layer of the aforementioned laminated wafer under the conditions of an upward lifting height of 250 μm, an upward lifting speed of 5 mm / s, and an upward lifting time of 500 ms. Furthermore, a rating of "A" was given when all silicon wafers with film-like adhesive could be picked up normally, and a rating of "B" was given when more than one silicon wafer with film-like adhesive could not be picked up normally. The results are shown in Table 1.

[0365] [Determination of T-shaped peel strength between intermediate layer and film adhesive] In the semiconductor device manufacturing wafer obtained above, the release film is removed. The entire exposed surface of the film adhesive in the semiconductor device manufacturing wafer generated therefrom is attached to the adhesive surface of the adhesive tape ("PET50(A) PL thin 8LK" manufactured by Lintec Corporation) having a polyethylene terephthalate layer. The resulting laminate is cut out in the size of 50mm × 100mm to prepare a test piece. In the test piece, according to JIS K6854-3, the laminate of substrate, adhesive layer and intermediate layer (i.e., the aforementioned laminate) is torn apart from the laminate of film adhesive and adhesive tape, thereby peeling the test piece in a T-shape. The maximum value of the peel force (mN / 50mm) measured at this time is taken as the T-shaped peel strength. At this point, the peeling speed was set to 50 mm / min, and the measurement was conducted at 23°C and 50% RH. The results are shown in Table 1.

[0366] [Continuation of the manufacturing and evaluation of semiconductor device wafers (1)] [Reference Example 2] The coating amount of the composition for forming the intermediate layer was increased, and the thickness of the intermediate layer was replaced with 80 μm instead of 20 μm. Otherwise, a semiconductor device wafer was manufactured and evaluated in the same manner as in Reference Example 1. The results are shown in Table 1.

[0367] [Reference Example 3] In the preparation of the composition for forming the intermediate layer, the aforementioned silicate compound was not added, and the amount of the aforementioned ethylene-vinyl acetate copolymer used was set to 16.5g instead of 15g (in other words, the aforementioned silicate compound was replaced by the same mass of the aforementioned ethylene-vinyl acetate copolymer, so that the aforementioned ethylene-vinyl acetate copolymer was dissolved in tetrahydrofuran). Otherwise, a semiconductor device manufacturing wafer was manufactured and evaluated using the same method as in Reference Example 1. The results are shown in Table 1. The "-" in the additive column of Table 1 indicates that the additive was not used.

[0368] [Comparative Example 1] In the preparation of the intermediate layer composition, the same mass of ethylene-vinyl acetate copolymer (EVA, weight average molecular weight 200,000, content of constituent units derived from vinyl acetate 25% by mass) was used instead of the aforementioned ethylene-vinyl acetate copolymer, and the coating amount of the intermediate layer composition was increased, and the thickness of the intermediate layer was changed from 20 μm to 80 μm. Otherwise, a semiconductor device manufacturing wafer was manufactured and evaluated using the same method as in Reference Example 1. The results are shown in Table 1.

[0369] [Comparative Example 2] In the preparation of the composition for forming the intermediate layer, the same mass of ethylene-vinyl acetate copolymer (EVA, weight average molecular weight 200,000, content of constituent units derived from vinyl acetate 25% by mass) was used instead of the aforementioned ethylene-vinyl acetate copolymer. Otherwise, a semiconductor device manufacturing wafer was manufactured using the same method as in Reference Example 1, and the results were evaluated. The results are shown in Table 1.

[0370] [Table 1] Reference Example 1 See Example 2 See Example 3 Comparative Example 1 Comparative Example 2 Composition of the intermediate layer principal component Ingredient Name EVA EVA EVA EVA EVA Weight average molecular weight 30000 30000 30000 200000 200000 Content (mass %) 90.9 90.9 100 90.9 90.9 additive Ingredient Name Polydimethylsiloxane Polydimethylsiloxane - Polydimethylsiloxane Polydimethylsiloxane Content (mass %) 9.1 9.1 - 9.1 9.1 Thickness (μm) 20 80 20 80 20 Evaluation results The ratio of elemental concentrations in the intermediate layer (%) C 66 66 81 70 70 O 25 25 19 twenty two twenty two N 0 0 0 0 0 Si 9 9 0 8 8 The effect of suppressing the generation of cutting chips during blade cutting. A A A B B Cutting properties of film-like adhesive during expansion A A A A B Pickup properties of expanded silicon wafers with film-like adhesive A A B A A T-peel strength between the intermediate layer and the film adhesive (mN / 50mm) 100 60 200 60 100

[0371] It is evident from the above results that, in Reference Examples 1 to 3, the generation of cutting chips can be suppressed during blade cutting, and the poor cutting of the film adhesive can be suppressed during expansion, demonstrating excellent performance in silicon wafer dicing. In Reference Examples 1 to 3, the weight average molecular weight of the ethylene-vinyl acetate copolymer, which is the main component contained in the intermediate layer of the semiconductor device manufacturing wafer, is 30,000.

[0372] Furthermore, in Reference Examples 1 to 3, the content of the aforementioned ethylene-vinyl acetate copolymer in the aforementioned intermediate layer is 90.9% by mass or more relative to the total mass of the intermediate layer, and the content of the aforementioned siloxane compound is 9.1% by mass or less relative to the total mass of the intermediate layer.

[0373] Furthermore, in Reference Examples 1 and 2, the pick-up performance of the expanded silicon wafer with film-like adhesive is excellent. In Reference Examples 1 and 2, the T-shaped peel strength between the intermediate layer and the film-like adhesive is moderately low at 100 mN / 50 mm or less, and the aforementioned silicon concentration ratio of the intermediate layer is moderately high at 9%. These evaluation results match the above-mentioned evaluation results of the pick-up performance of the silicon wafer with film-like adhesive. In Reference Example 3, the intermediate layer in the semiconductor device manufacturing wafer does not contain the aforementioned siloxane compounds.

[0374] The only difference between the semiconductor device manufacturing wafers of Reference Examples 1 and 2 is the thickness of the intermediate layer. Compared with the semiconductor device manufacturing wafer of Reference Example 1, the T-shaped peel strength between the intermediate layer and the film adhesive of Reference Example 2 is smaller. Compared with Reference Example 1, Reference Example 2 is easier to pick up silicon wafers with film adhesive. It is speculated that this is because even though the ratio (mass %) of the content of siloxane compounds to the total mass of the intermediate layer is the same in the semiconductor device manufacturing wafers of Reference Examples 1 and 2, the content (mass parts) of siloxane compounds in the intermediate layer is more in Reference Example 2 than in Reference Example 1. Furthermore, since siloxane compounds in the intermediate layer tend to concentrate on both sides of the intermediate layer and the surrounding area, the amount of siloxane compounds concentrated on both sides of the intermediate layer and the surrounding area is also more in Reference Example 2 than in Reference Example 1.

[0375] Furthermore, in Reference Examples 1 to 3, nitrogen was not detected during XPS analysis of the exposed surface of the intermediate layer.

[0376] In contrast, in Comparative Examples 1 and 2, the generation of cutting chips could not be suppressed during blade cutting, resulting in poor dicing suitability of the silicon wafer. In Comparative Examples 1 and 2, the weight average molecular weight of the ethylene-vinyl acetate copolymer contained in the intermediate layer of the semiconductor device manufacturing wafer, which is the main component, is 200,000.

[0377] Furthermore, the only difference between the semiconductor device manufacturing wafers of Comparative Examples 1 and 2 is the thickness of the intermediate layer. The relationship between the T-shaped peel strength between the intermediate layer and the film adhesive in Comparative Examples 1 and 2 shows the same tendency as in Reference Examples 1 and 2. In addition, nitrogen was not detected in the XPS analysis of the exposed surface of the intermediate layer in Comparative Examples 1 and 2.

[0378] [Example 1] [Manufacturing and Evaluation of Wafer for Semiconductor Device Manufacturing (2)] [Manufacturing of Wafer for Semiconductor Device Manufacturing] The substrate was manufactured in the same manner as in Reference Example 1. The maximum cross-sectional height Rt of one side of the substrate was 1500 nm, and the surface roughness Ra was 140 nm (this side is sometimes referred to as the smooth side). In addition, the maximum cross-sectional height Rt of the other side was 6000 nm, and the surface roughness Ra was 600 nm (this side is sometimes referred to as the rough side). Furthermore, carbon black (0.5 parts by mass) was added to the adhesive composition as a coloring pigment. In addition, the coating amount of the adhesive composition was increased, and the thickness of the adhesive layer was changed from 10 μm to 20 μm. In addition, when making the composition for forming the intermediate layer, ethylene-vinyl acetate copolymer (EVA, weight average molecular weight 30000, content of constituent units derived from vinyl acetate 20% by mass) was used instead of ethylene-vinyl acetate copolymer (EVA, weight average molecular weight 30000, content of constituent units derived from vinyl acetate 25% by mass). The exposed surface opposite to the side with the release film in the adhesive layer obtained above is bonded to a rough surface of the substrate obtained above, thereby creating a first intermediate laminate with a release film (in other words, a support sheet with a release film). Except as described above, a wafer for manufacturing a semiconductor device is manufactured in the same manner as in Reference Example 1.

[0379] By the above method, a semiconductor device manufacturing wafer with a release film is obtained, which is formed by depositing a substrate (thickness 110 μm), an adhesive layer (thickness 20 μm), an intermediate layer (thickness 20 μm), a film-like adhesive (thickness 7 μm), and a release film in the thickness direction of these layers in this order. In the semiconductor device manufacturing wafer of Example 1, the surface opposite to the side of the substrate where the adhesive layer is located becomes a smooth surface.

[0380] [Measurement of total light transmittance and haze of the support sheet] The release film was removed from the first intermediate laminate obtained above to obtain a support sheet composed of a substrate and an adhesive layer. For the obtained support sheet, the total light transmittance (%) was measured using a haze meter (Nippon Denshoku Kogyo Co., Ltd., NDH7000) according to JISK7361-1:1997, and the haze value (%) was measured according to JISK7136:2000. The results are shown in Table 2.

[0381] [Determination of Maximum Cross-sectional Height Rt and Arithmetic Mean Roughness Ra of the Back Side of the Substrate] The maximum cross-sectional height Rt and arithmetic mean roughness Ra of the side of the substrate opposite to the side with the adhesive layer (back side of the substrate) of the semiconductor device manufacturing wafer obtained above were measured. The maximum cross-sectional height Rt was measured according to JISB0601:2013 (ISO4287:1997, Amd.1:2009). The arithmetic mean roughness Ra was measured according to JISB0601:2001. The results are shown in Table 2.

[0382] [Evaluation of Identification of Peripheral Areas of Non-Laminated Regions of Adhesive Layers] In the semiconductor device manufacturing wafer obtained above, the maximum width (i.e., diameter) of the intermediate layer and the maximum width (i.e., diameter) of the film adhesive are both smaller than the maximum width of the adhesive layer and the maximum width of the substrate. Regarding whether the periphery of the non-laminated intermediate layer and the film adhesive region (non-laminated region) in the adhesive layer can be identified by a bonding machine, the following evaluation procedure is used.

[0383] First, remove the release film from the semiconductor device manufacturing wafer obtained above. Prepare a silicon wafer (300 mm in diameter and 75 μm in thickness) whose inner surface has been dry polished.

[0384] Using a bonding machine (Lintec "AdwillRAD2700"), the aforementioned semiconductor device manufacturing wafer was heated to 60°C, and a film-like adhesive of the semiconductor device manufacturing wafer was used to bond it to the inner surface (polished surface) of a silicon wafer. The feasibility of bonding was evaluated according to the following evaluation criteria. The results are shown in Table 2.

[0385] (Evaluation Criteria) A: The periphery of the non-layered area of ​​the adhesive layer can be identified, and the semiconductor device manufacturing die can be attached to the silicon wafer. B: The periphery of the non-layered area of ​​the adhesive layer cannot be identified, and the semiconductor device manufacturing die cannot be attached to the silicon wafer.

[0386] [Evaluation of Cut Retention During Cold Spreading][Manufacturing of Silicon Wafer Clusters with Film-like Adhesive] First, a silicon wafer (300 mm in diameter, 775 μm thick) was halved by cutting a blade from one of the circuit formation surfaces using a dicing apparatus (Disco "DFD6361"). The dicing was performed using a blade (Disco "ZH05-SD2000-N1-90") with a rotational speed of 50,000 rpm, a blade travel speed of 25 mm / sec, and a cutting depth of 75 μm.

[0387] Next, a back-side polishing tape (Lintec "Adwill E-3100TN") is attached to the aforementioned surface (i.e., the circuit formation surface) of the silicon wafer.

[0388] Next, using a back-side polishing apparatus (DISCO's "DGP8761"), the other side of the silicon wafer (the side not attached to the back-side polishing tape) is polished to adjust the thickness of the silicon wafer to 30 μm, and the silicon wafer is then divided to produce a plurality of silicon wafers with a size of 3 mm × 3 mm. In this way, a group of silicon wafers is obtained in which a plurality of silicon wafers are neatly arranged and fixed on the back-side polishing tape.

[0389] Next, the release film is removed from the semiconductor device manufacturing wafer obtained above. Using a bonding machine (Lintec "AdwillRAD2700"), the semiconductor device manufacturing wafer is heated to 60°C and attached to the side of the silicon wafer group with back polishing tape that is not attached with the back polishing tape using the film adhesive of the semiconductor device manufacturing wafer. In this way, a silicon wafer group with film adhesive is obtained by sequentially stacking the substrate, adhesive layer, intermediate layer, film adhesive and silicon wafer group in the thickness direction of these layers.

[0390] Next, the area near the periphery of the first side of the adhesive layer of the semiconductor device manufacturing wafer attached to the silicon wafer assembly (the aforementioned non-deposition area) is fixed to the annular frame for wafer dicing.

[0391] Next, the back polishing tape of the silicon wafer array with its own film adhesive is removed.

[0392] Next, the expansion step is performed using a fully automated die separator (Disco DDS2300). First, the surface opposite to the adhesive layer of the silicon wafer substrate (the back side of the substrate) is brought into contact with the adsorption stage and the top member. Next, the back side of the substrate is adsorbed using the adsorption stage. While cooling the semiconductor device manufacturing wafer at 0°C, the surface of the semiconductor device manufacturing wafer is expanded in a parallel direction to cut the film adhesive along the outer periphery of the silicon wafer. At this time, the periphery of the semiconductor device manufacturing wafer is fixed, and while adsorbing the back side of the substrate using the adsorption stage, the entire area of ​​the semiconductor device manufacturing wafer with the interlayer and film adhesive is lifted from the substrate side using the adsorption stage and the top member to expand it. The expansion speed is 100 mm / s, and the expansion amount is 10 mm. Next, the adsorption stage and the top member are lowered to release the expansion state.

[0393] Thereby, a group of silicon wafers with film-like adhesive, having a silicon wafer and a cut film-like adhesive disposed on the other side (grinding surface) mentioned above, are obtained in which a group of silicon wafers with film-like adhesive are fixed in an orderly arrangement on an intermediate layer. Next, the semiconductor device manufacturing wafer is de-adsorbed from the state of being adsorbed on the adsorption stage and is expanded.

[0394] Next, the periphery of the silicon wafer in the aforementioned laminated wafer that does not contain a film-like adhesive is heated.

[0395] [Evaluation of Cut Retention Performance] Next, the cut retention performance is evaluated by the following method. That is, assuming that the film adhesive is normally cut during the expansion of a semiconductor device manufacturing wafer, the expanded silicon wafer group with film adhesive will form cuts in a network manner through multiple cuts extending on the MD of the intermediate layer and multiple cuts extending on the TD of the intermediate layer. Among the intersections (in other words, orthogonal parts) of the cuts extending on the MD of the intermediate layer and the cuts extending on the TD of the intermediate layer, the central intersection (sometimes referred to as the "first intersection" in this specification) corresponding to the approximate center of the silicon wafer before dicing, and the intersections of the two parts located closest to the outer periphery of the silicon wafer before dicing and located on the TD of the intermediate layer at the same position as the aforementioned central intersection (first intersection) (sometimes referred to as the "second intersection" and "fourth intersection" in this specification, respectively). The five intersecting locations (sometimes referred to as "the third intersecting location" and "the fifth intersecting location" respectively) on the MD of the intermediate layer, located closest to the outer periphery of the silicon wafer before dicing and at the same position as the aforementioned central intersecting location (the first intersecting location), were measured using a digital microscope (Keyence VH-Z100) from above the silicon wafer side of the silicon wafer group with the film-like adhesive. That is, for each intersecting location, the measured value of the cut width was set to one for the aforementioned MD and one for the aforementioned TD (a total of two), so that the total number of measured values ​​of the cut width for the five intersecting locations is 10.

[0396] Figure 7 shows the measurement location of the cut width at this time. In Figure 7, symbol 9 represents a silicon wafer, symbol 79a represents a cut extending on the MD of the intermediate layer, and symbol 79b represents a cut extending on the TD of the intermediate layer. When the semiconductor device manufacturing wafer used is as shown in Figure 1, the first surface 13a of the intermediate layer 13 will be exposed through these cuts 79a and 79b. In addition, symbols Wa1, Wa2, Wa3, Wa4, and Wa5 all represent the width of the cut extending on the MD of the intermediate layer (in other words, the cut width of the TD in the aforementioned intersection), and symbols Wb1, Wb2, Wb3, Wb4, and Wb5 all represent the width of the cut extending on the TD of the intermediate layer (in other words, the cut width of the MD in the aforementioned intersection). The intersection of the cut widths Wa1 and Wb1 is the aforementioned first intersection. Furthermore, the intersection of the measured cut widths Wa2 and Wb2 is the aforementioned second intersection, and the intersection of the measured cut widths Wa4 and Wb4 is the aforementioned fourth intersection. Additionally, the intersection of the measured cut widths Wa3 and Wb3 is the aforementioned third intersection, and the intersection of the measured cut widths Wa5 and Wb5 is the aforementioned fifth intersection. Furthermore, Figure 7 is a schematic top view of a silicon wafer array with a film-like adhesive, used to illustrate the measurement locations of the cut width. Although it shows a case where the cut width is constant at any location, this is merely an example. Even within the same silicon wafer array with a film-like adhesive, the cut width may vary depending on the cut position. Moreover, in various embodiments and comparative examples, even cuts at the same location within a silicon wafer array with a film-like adhesive may have varying cut widths.

[0397] Furthermore, the incision retention was evaluated based on the following evaluation criteria using the measured values ​​of the 10 incision widths mentioned above. The results are shown in Table 2. (Evaluation Criteria) A: All measured values ​​of the incision width are 10 μm or more. B: The measured values ​​of more than one incision width are less than 10 μm.

[0398] [Evaluation of Pickup Performance of Silicon Wafers with Film-like Adhesive After Expansion] Following the evaluation of cut retention during cold expansion, a group of silicon wafers with film-like adhesive and a die-attaching device (PU100 manufactured by Fasford Technology) were used. Under the conditions of an upward lifting height of 250 μm, an upward lifting speed of 5 mm / s, an upward lifting time of 500 ms, an expansion amount of 4 mm, and an upward lifting method of 1 top pin, the back side of the substrate was adsorbed by an adsorption stage, and the support sheet was lifted by the adsorption stage and the upward lifting member. Silicon wafers with film-like adhesive were picked up from the intermediate layer of the aforementioned laminate. Furthermore, the case where all silicon wafers with film-like adhesive could be picked up normally was evaluated as "A", and the case where more than one silicon wafer with film-like adhesive could not be picked up normally was evaluated as "B". The results are shown in Table 2.

[0399] A silicon wafer with a film-like adhesive, after being picked up, is bonded to the circuit formation surface of a substrate using the film-like adhesive. Next, other semiconductor wafers are deposited onto this semiconductor wafer, and after wire bonding, the entire assembly is sealed with resin. A target semiconductor device is manufactured in this manner.

[0400] [Manufacturing and Evaluation of Semiconductor Device Manufacturing Wafers][Example 2] In the preparation of the adhesive composition, instead of adding coloring pigments, microparticles composed of silicon-containing compounds ("TOSPEARL120", average particle size: 2.0 μm, refractive index: 1.43) (1.5 parts by mass) were added as filler. Otherwise, semiconductor device manufacturing wafers were manufactured and evaluated in the same manner as in Example 1. The results are shown in Table 2.

[0401] [Example 3] No coloring pigment was added when making the adhesive composition. Otherwise, a semiconductor device manufacturing wafer was manufactured and evaluated in the same manner as in Example 1. The results are shown in Table 2.

[0402] [Reference Example 4] In manufacturing a semiconductor device wafer, the exposed surface opposite to the side having the release film in the adhesive layer is bonded to the smooth surface of the substrate obtained above, thereby obtaining a first intermediate laminate with a release film. In the semiconductor device wafer of Reference Example 4, the surface opposite to the side having the adhesive layer in the substrate becomes a rough surface. Except as described above, the semiconductor device wafer was manufactured and evaluated using the same method as in Example 1. The results are shown in Table 2.

[0403] [Reference Example 5] The blade cutting setting was changed so that the size of the silicon wafer cluster obtained from the silicon wafer was 4mm × 4mm. Otherwise, the silicon wafer was halved in the same way as in Example 1. Furthermore, when manufacturing a semiconductor device manufacturing wafer, the exposed side opposite to the side with the release film in the adhesive layer was bonded to the smooth surface of the substrate obtained above, thereby obtaining a first intermediate laminate with a release film. Except as described above, the semiconductor device manufacturing wafer was manufactured in the same way as in Example 1. Except as described above, the semiconductor device manufacturing wafer was manufactured in the same way as in Example 1 and evaluated. The results are shown in Table 2.

[0404] [Table 2] Example 1 Example 2 Example 3 See Example 4 See Example 5 chip Dimensions (mm) 3×3 3×3 3×3 3×3 4×4 Area (mm) 2 ) 9 9 9 9 16 substrate Ra(nm) 140 140 140 600 600 Rt(nm) 1500 1500 1500 6000 6000 Total light transmittance (%) 60 80 80 60 60 Haze (%) 4 12 4 4 4 Identification of non-layered regions A A B A A Incision retention A A A B A Picking A A A B A

[0405] In Examples 1 to 2 and Reference Examples 4 to 5, the adhesive layer contains coloring pigments or fillers, so the haze of the support sheet formed by the substrate and the adhesive layer is 10 or higher, or the total light transmittance of the support sheet is 70% or lower. Therefore, in Examples 1 to 2 and Reference Examples 4 to 5, the bonding machine can identify the non-deposition areas of the adhesive layer and can attach semiconductor device manufacturing wafers to silicon wafers.

[0406] In Example 3, since the adhesive layer does not contain coloring pigments, the bonding machine cannot identify the non-deposition areas of the adhesive layer. Therefore, the device is set to semi-automatic mode, the bonding position is confirmed manually, the semiconductor device manufacturing die is bonded to the silicon wafer, and then the cut retention is evaluated.

[0407] In Examples 1 to 3, the maximum cross-sectional height of the back side of the substrate was 2000 nm or less, and the surface roughness of the back side of the substrate was 200 nm or less. Therefore, in Examples 1 to 3, the cut retention was sufficient. This result is believed to be because, during the expansion process, the adsorption between the back side of the substrate and the adsorption stage could be suppressed, allowing the periphery of the silicon wafer group in the laminate that did not contain the film-like adhesive to be heated and fixed.

[0408] In contrast, in Reference Example 4, the maximum cross-sectional height of the substrate back side exceeds 2000 nm, and the surface roughness of the substrate back side exceeds 200 nm. Therefore, in Reference Example 4, where the silicon wafer group size is 3 mm × 3 mm, the cut retention is insufficient. This result is considered to be due to the release of adsorption between the substrate back side and the adsorption stage during the expansion process, which prevents the aforementioned peripheral heating from proceeding rapidly.

[0409] In contrast, in Reference Example 5, the maximum cross-sectional height of the back side of the substrate exceeds 2000 nm, and the surface roughness of the back side of the substrate exceeds 200 nm. Reference Example 5 uses a silicon wafer group size of 4 mm × 4 mm, and the cut retention is sufficient. It is speculated that because the size of the silicon wafer group in Reference Example 5 is larger than that in Reference Example 4, the proportion of the area of ​​the gap between adjacent semiconductor wafers is smaller relative to the total area of ​​the wafer used for semiconductor device manufacturing. As a result, during the expansion process, the adsorption between the back side of the substrate and the adsorption stage can be suppressed, and the aforementioned peripheral portion can be heated and fixed.

[0410] When using the semiconductor device manufacturing wafers of Examples 1 to 3 and Reference Example 5, the adsorption between the back side of the substrate and the adsorption stage does not occur during the pick-up step. In contrast, when using the semiconductor device manufacturing wafer of Reference Example 4, the adsorption between the back side of the substrate and the adsorption stage is released during the pick-up step. In Reference Example 5, although the maximum cross-sectional height of the back side of the substrate exceeds 2000 nm and the surface roughness of the back side of the substrate exceeds 200 nm, the adsorption between the back side of the substrate and the adsorption stage does not occur because the size of the silicon wafer group is 4 mm × 4 mm.

[0411] [Industry Applicability] The present invention can be used to manufacture semiconductor devices. [Simplified Explanation of the Diagram]

[0413] [Fig. 1] is a cross-sectional view schematically showing a semiconductor device manufacturing wafer according to one embodiment of the present invention. [Fig. 2] is a top view of the semiconductor device manufacturing wafer shown in Fig. 1. [Fig. 3A] is a cross-sectional view schematically illustrating an example of a method of using the semiconductor device manufacturing wafer according to one embodiment of the present invention. [Fig. 3B] is a cross-sectional view schematically illustrating an example of a method of using the semiconductor device manufacturing wafer according to one embodiment of the present invention. [Fig. 3C] is a cross-sectional view schematically illustrating an example of a method of using the semiconductor device manufacturing wafer according to one embodiment of the present invention. [Fig. 4A] is a cross-sectional view schematically illustrating an example of a method of manufacturing a semiconductor wafer. [Fig. 4B] is a cross-sectional view schematically illustrating an example of a method of manufacturing a semiconductor wafer. [Fig. 4C] is a cross-sectional view schematically illustrating an example of a method of manufacturing a semiconductor wafer. [Fig. 5A] is a cross-sectional view schematically illustrating other examples of a method of using the semiconductor device manufacturing wafer according to one embodiment of the present invention. [Figure 5B] is a cross-sectional view illustrating another example of the method of using a semiconductor device manufacturing wafer according to one embodiment of the present invention. [Figure 5C] is a cross-sectional view illustrating another example of the method of using a semiconductor device manufacturing wafer according to one embodiment of the present invention. [Figure 6A] is a cross-sectional view illustrating a method of obtaining a semiconductor wafer by forming trenches on a semiconductor wafer. [Figure 6B] is a cross-sectional view illustrating a method of obtaining a semiconductor wafer by forming trenches on a semiconductor wafer. [Figure 6C] is a cross-sectional view illustrating a method of obtaining a semiconductor wafer by forming trenches on a semiconductor wafer. [Figure 7] is a top view schematically showing the evaluation object, illustrating the measurement location of the cut width during the evaluation of cut retention performance in the embodiment.

Claims

1. A semiconductor device manufacturing wafer comprising a substrate, an adhesive layer, an intermediate layer, and a film-like adhesive, wherein the adhesive layer, the intermediate layer, and the film-like adhesive are sequentially deposited on the substrate; the intermediate layer contains a non-silicone resin with a weight average molecular weight of 100,000 or less as a main component; and the maximum cross-sectional height of the surface of the substrate opposite to the side containing the adhesive layer is 2,000 nm or less.

2. The semiconductor device manufacturing wafer as described in claim 1, wherein the surface roughness of the surface opposite to the side having the aforementioned adhesive layer in the aforementioned substrate is 200 nm or less.

3. The semiconductor device manufacturing wafer as described in claim 1 or 2, wherein the haze of the support sheet composed of the aforementioned substrate and the aforementioned adhesive layer is 10 or more, or the total light transmittance of the aforementioned support sheet is 70% or less.

4. The semiconductor device manufacturing wafer as described in claim 1 or 2, wherein the aforementioned adhesive layer contains one or more of the group consisting of colorants and fillers.

5. A method for manufacturing a semiconductor wafer having a semiconductor device manufacturing wafer, comprising the following steps: attaching a semiconductor device manufacturing wafer as described in any one of claims 1 to 4 to an inner surface of a semiconductor wafer to form a laminate; while adsorbing the surface opposite to the side of the substrate having the adhesive layer at a temperature below 0°C using an adsorption stage, and while lifting the entire area of ​​the semiconductor device manufacturing wafer having the intermediate layer and the film adhesive from the substrate side using the adsorption stage and an upward lifting member, thereby expanding and cutting the film adhesive to obtain a group of semiconductor wafers with film adhesive arranged in a neat manner on the intermediate layer; and heating the peripheral portion of the expanded laminate where the semiconductor wafer without the film adhesive is placed.

6. The use of a semiconductor device manufacturing wafer as described in claim 1 or 2, wherein the semiconductor wafer is manufactured by means of a semiconductor wafer manufacturing method for a semiconductor device manufacturing wafer as described in claim 5, wherein the area of ​​the semiconductor wafer is 9 mm2 or less.

Images