Method for processing substrate, non-transitory computer readable storage medium, and chemical vapor deposition chamber for processing substrate

Abstract

This document provides methods and apparatus for processing substrates. For example, one method includes the following steps: supplying a vaporized precursor into a processing volume; supplying activated elements comprising ions and free radicals from a remote plasma source; exciting the activated elements with RF source power during a first duty cycle to react with the vaporized precursor to deposit a SiNHx film onto a substrate disposed in the processing volume; supplying a first process gas from the remote plasma source while simultaneously providing RF bias power to a substrate support during a second duty cycle different from the first duty cycle to convert the SiNHx film into a SiOx film; supplying a process gas mixture formed by a second process gas supplied from the remote plasma source and a third process gas supplied from the gas source while simultaneously providing RF bias power to the substrate support during the second duty cycle; and annealing the substrate.

Description

[Technical Field]

[0001] The embodiments disclosed herein generally relate to methods and apparatus for processing substrates, and more specifically, to methods and apparatus configured to form interstitial SiO films using in-situ plasma processing. [Previous Technology]

[0002] Conventional methods and equipment for interstitial SiO films utilize vapor processes and / or one or more multi-step processes to develop stable SiO films, for example, to meet platform requirements. For instance, some methods use one or more deposition methods (e.g., chemical vapor deposition, DED furnace, etc.) to deposit SiO films, followed by one or more other processes, such as vapor annealing or complex multi-step methods (e.g., ultraviolet (UV) curing, chemical mechanical polishing (CMP), plasma treatment, etc.). However, such methods have structural problems (e.g., line bending), provide poor interstitial filling (e.g., porosity (seams / voids)), can be very complex and expensive, have low production volumes, and often exceed thermal budgets. [Summary of the Invention]

[0003] This document provides a method and apparatus for processing a substrate. In some embodiments, a method for processing a substrate includes the following steps: supplying a vaporized precursor from a gas supply to a processing volume of a processing chamber; supplying activated elements comprising ions and free radicals from a remote plasma source; exciting the activated elements with RF source power for a first duty cycle to react with the vaporized precursor to deposit a SiNHx film onto a substrate supported on a substrate support disposed in the processing volume; supplying a first process gas from the remote plasma source while simultaneously providing RF bias power to the substrate support for a second duty cycle different from the first duty cycle to convert the SiNHx film into a SiOx film; supplying a process gas mixture formed by a second process gas supplied from the remote plasma source and a third process gas supplied from the gas supply while simultaneously providing RF bias power to the substrate support for the second duty cycle; and annealing the substrate.

[0004] According to at least some embodiments, a non-transitory computer-readable storage medium is provided, the non-transitory computer-readable storage medium storing instructions that, when executed by a processor, perform a method for processing a substrate. The method includes the steps of: supplying a vaporized precursor from a gas supply to a processing volume of a processing chamber; supplying activated elements comprising ions and free radicals from a remote plasma source; exciting the activated elements with RF source power for a first duty cycle to react with the vaporized precursor to deposit a SiNHx film onto a substrate supported on a substrate support disposed in the processing volume; supplying a first process gas from the remote plasma source while simultaneously providing RF bias power to the substrate support for a second duty cycle different from the first duty cycle to convert the SiNHx film into a SiOx film; supplying a process gas mixture formed by a second process gas supplied from the remote plasma source and a third process gas supplied from the gas supply while simultaneously providing RF bias power to the substrate support for the second duty cycle; and annealing the substrate.

[0005] According to at least some embodiments, a chemical vapor deposition chamber for processing a substrate includes: a substrate support disposed in a processing volume of the chemical vapor deposition chamber; a remote plasma source coupled to the chemical vapor deposition chamber and configured to provide activated elements to a nozzle in the processing volume; an RF source power coupled to the nozzle and configured to provide RF source power in a first duty cycle; an RF bias power supply coupled to the substrate support and configured to provide RF bias power to the substrate support in a second duty cycle different from the first duty cycle; a gas supply coupled to the chemical vapor deposition chamber and configured to supply process gas to the nozzle disposed in the processing volume; and a controller configured to... The process involves: supplying a vaporized precursor from the gas supply to the processing volume of the chemical vapor deposition chamber; supplying activated elements, including ions and free radicals, from the remote plasma source; exciting the activated elements with RF source power during the first duty cycle to react with the vaporized precursor to deposit a SiNHx film onto a substrate supported on a substrate support disposed in the processing volume; supplying a first process gas from the remote plasma source while simultaneously providing RF bias power to the substrate support during the second duty cycle to convert the SiNHx film into a SiOx film; supplying a process gas mixture formed by a second process gas supplied from the remote plasma source and a third process gas supplied from the gas supply while simultaneously providing RF bias power to the substrate support during the second duty cycle; and annealing the substrate.

[0006] Other and further embodiments of this disclosure are described below.

Implementation Method

[0012] This document provides embodiments of methods and apparatus for processing substrates. For example, the methods and apparatus described herein use in-situ O2-based processing to convert SiNHx into SiOx bonds to form a SiO network and densify the SiO film in a deposition chamber. Compared to conventional methods and apparatus, the methods and apparatus described herein offer lower cost and higher throughput, for example, due to the fewer chambers required for converting and stabilizing the SiO film, the use of low-temperature SiO conversion to improve flowability and avoid porosity / conformity issues, and the provision of film composition tunability by varying processing conditions.

[0013] According to at least some embodiments of this disclosure, the first figure is a flowchart of a method 100 for processing a substrate, and the second figure is a tool 200 (or device) that can be used to perform the method 100.

[0014] Method 100 may be performed in tool 200, which includes any suitable processing chamber configured for one or more of physical vapor deposition (PVD), chemical vapor deposition (CVD) (e.g., plasma-enhanced CVD, PECVD, flowable CVD, FCVD) and / or atomic layer deposition (ALD) (e.g., plasma-enhanced ALD, PEALD, or thermal ALD (e.g., no plasma formation)); an annealing chamber; a pre-cleaning chamber; a wet etching or dry etching chamber; or a CMP chamber. Exemplary processing systems that can be used to perform the inventive methods disclosed herein are commercially available from Applied Materials, Inc., of Santa Clara, California. Other processing chambers, including those available from other manufacturers, may also be used appropriately in conjunction with the teachings provided herein.

[0015] Tool 200 may be embodied in a separate processing chamber, which may be configured independently or as part of a cluster of tools, for example, integrated as described below with reference to Figure 2. Examples of integrated tools are commercially available from Applied Materials, Inc., Santa Clara, California. The methods described herein may be practiced using a suitable processing chamber coupled thereto or in other suitable clusters of tools. For example, in some embodiments, the methods of the invention may be performed in an integrated tool such that there is limited or no vacuum interruption between processing steps. For example, reduced vacuum interruption may limit or prevent contamination (e.g., oxidation) of portions of the substrate.

[0016] The integrated tool includes a processing platform 201 (vacuum sealing processing platform), a factory interface 204, and a controller 202. The processing platform 201 includes multiple processing chambers, such as 214A, 214B, 214C, and 214D, which are operatively coupled to a transfer chamber 203 (vacuum substrate transfer chamber). The factory interface 204 is operatively coupled to the transfer chamber 203 via one or more loading gate chambers (two loading gate chambers, such as 206A and 206B shown in Figure 2).

[0017] In some embodiments, the fab interface 204 includes a docking station 207 and a fab interface robot 238 to facilitate the transfer of one or more semiconductor substrates (wafers). The docking station 207 is configured to receive one or more front-opening unified pods (FOUPs). Four FOUPs, such as 205A, 205B, 205C, and 205D, are illustrated in the embodiment of Figure 2. The fab interface robot 238 is configured to transfer substrates from the fab interface 204 to the processing platform 201 via loading gate chambers (such as 206A and 206B). Each of the loading gate chambers 206A and 206B has a first port coupled to the fab interface 204 and a second port coupled to the transfer chamber 203. Loading gate chambers 206A and 206B are coupled to a pressure control system (not shown) that evacuates and degasses the loading gate chambers 206A and 206B to facilitate the transfer of the substrate between the vacuum environment of the transfer chamber 203 and the substantially surrounding (e.g., atmospheric) environment of the factory interface 204. The transfer chamber 203 has a vacuum robot 242 disposed within it. The vacuum robot 242 is capable of transferring the substrate 221 between the loading gate chambers 206A and 206B and the processing chambers 214A, 214B, 214C, and 214D.

[0018] In some embodiments, processing chambers 214A, 214B, 214C, and 214D are coupled to transfer chamber 203. Processing chambers 214A, 214B, 214C, and 214D include at least an ALD chamber, a CVD chamber, a PVD chamber, an electron beam deposition chamber, an electroless (EEP) deposition chamber, a pre-cleaning chamber, a wet etching chamber, a dry etching chamber, an annealing chamber, and / or other chambers suitable for performing the methods described herein.

[0019] In some embodiments, one or more optional repair chambers (illustrated as 216A and 216B) may be coupled to transfer chamber 203. Repair chambers 216A and 216B may be configured to perform other substrate processes, such as degassing, bonding, chemical mechanical polishing (CMP), wafer splitting, etching, plasma dicing, alignment, substrate metering, cooling, etc.

[0020] Controller 202 controls the operation of tool 200 by directly controlling processing chambers 214A, 214B, 214C, and 214D, or alternatively by controlling a computer (or controller) associated with processing chambers 214A, 214B, 214C, and 214D and tool 200. During operation, controller 202 enables data collection and feedback from the respective chambers and systems to optimize the performance of tool 200. Controller 202 typically includes a central processing unit 230, memory 234, and support circuitry 232. Central processing unit 230 can be any type of general-purpose computer processor that can be used in an industrial environment. Support circuitry 232 is conventionally coupled to central processing unit 230 and may include cache, clock circuitry, input / output subsystems, power supply, etc. Software routines (such as the processing methods described above) can be stored in memory 234 (e.g., a non-transitory computer-readable storage medium on which instructions are stored), and when executed by central processing unit 230, central processing unit 230 transforms central processing unit 230 into a controller (dedicated computer). Software routines can also be stored and / or executed by a second controller (not shown) located remotely from tool 200.

[0021] Figure 3 is a cross-sectional view of a processing chamber 300 according to at least some embodiments of the present disclosure. The processing chamber 300 may be one of several processing chambers within the tool 200. For example, the processing chamber 300 may be configured to perform one or more plasma deposition processes. In at least some embodiments, the processing chamber 300 may be configured to perform PECVD and / or ALD. Suitable processing chambers for use with the teachings disclosed herein include, for example, processing chambers available from Applied Materials, Inc. of Santa Clara, CA.

[0022] The processing chamber 300 includes a chamber body 302 and a cover 304 that enclose a processing volume 306. The chamber body 302 is typically made of aluminum, stainless steel, or other suitable material. The chamber body 302 typically includes sidewalls 308 and a bottom 310. A substrate support inlet / outlet port (not shown) is typically defined in the sidewalls 308 and is selectively sealed by a slit valve to facilitate the entry and exit of a substrate 303 from the processing chamber 300. An exhaust port 326 is defined in the chamber body 302 and couples the processing volume 306 to a pump system 328, which may also serve as a purification station. The pump system 328 typically includes one or more pumps and throttle valves for evacuating and regulating the pressure of the processing volume 306 of the processing chamber 300. In an embodiment, the pump system 328 is configured to maintain the pressure within the processing volume 306 at an operating pressure, which is typically between about 1 mTorr and about 500 mTorr, between about 5 mTorr and about 100 mTorr, between about 5 mTorr and about 50 mTorr, or between about 10 mTorr and about 5 Torr, depending on the processing requirements.

[0023] In some embodiments, the processing chamber 300 may utilize capacitively coupled radio frequency (RF) energy for plasma processing, or in some embodiments, the processing chamber 300 may utilize inductively coupled RF energy for plasma processing. In some embodiments, a remote plasma source 377 (e.g., microwaves) may be coupled to a gas panel, as appropriate, to facilitate the dissociation of a gas mixture from the remote plasma before it enters the processing volume 306 for processing or for cleaning the processing chamber 300 between processes. The remote plasma source 377 may supply the processing chamber 300 with activated elements (e.g., ions, radicals, or neutrals). For example, in at least some embodiments, the activated element may be formed from at least one of ammonia, argon, oxygen (O2), and helium. For example, in at least some embodiments, the activated element may be an ammonia radical or an argon ion.

[0024] The RF source power 343 is coupled to the printhead assembly 330 via a matching network 341. The RF source power 343 can typically generate up to about 5000 W, for example, between about 100 W and about 5000 W, or between 1000 W and 3000 W, or about 1500 W, and depending on the situation, at an adjustable frequency in the range of about 50 kHz to about 200 MHz, for example, 13.56 MHz. During processing, the RF source power 343 can operate in a duty cycle (e.g., a first duty cycle). This duty cycle can range from about 10% for pulses to about 100% for continuous operation.

[0025] A gas panel 358 is coupled to a processing chamber 300 and includes one or more mass flow controllers 357 to supply one or more process and / or cleaning gases to a processing volume 306. Inlet ports 332', 332'', 332''' are provided in a cover 304 to allow gas to be delivered from the gas panel 358 to the processing volume 306 of the processing chamber 300. In embodiments, gas panel 358 is adapted to provide oxygen (O2), inert gases (such as argon, helium (or other rare gases), nitrogen (N2), hydrogen (H2)) or gas mixtures (such as carbon tetrafluoride (CF4), octafluorocyclobutane or perfluorocyclobutane (C4F8), trifluoromethane (CHF3), sulfur hexafluoride (SF6), silicon tetrafluoride or tetrafluorosilane (SiF4)), precursors (such as trisilylamine (TSA)), etc., through inlet ports 332', 332'', 332''' and into the internal volume 306 of processing chamber 300. In at least some embodiments, the process gas provided from gas panel 358 includes at least a process gas comprising an oxidant (such as oxygen). In embodiments, the process gas comprising an oxidant may further include an inert gas, such as argon or helium. In some embodiments, the process gas includes a reducing agent (such as hydrogen) and may be mixed with an inert gas (such as argon) or other gases (such as nitrogen or helium). In some embodiments, chlorine may be provided alone or in combination with at least one of nitrogen, helium, and an inert gas (such as argon). Non-limiting examples of oxygen-containing gases include one or more of O2, carbon dioxide (CO2), H2O, nitrous oxide (N2O), nitrogen dioxide (NO2), ozone (O3), etc. Non-limiting examples of nitrogen-containing gases include N2, ammonia (NH3), etc. Non-limiting examples of chlorine-containing gases include hydrogen chloride (HCl), chlorine (Cl2), carbon tetrachloride (CCl4), etc. In an embodiment, the nozzle assembly 330 is coupled to the inner surface 314 of the cover 304. The nozzle assembly 330 includes a plurality of pores that allow gas to flow from inlet ports 332', 332'', 332''' through the nozzle assembly 330 into the processing volume 306 of the processing chamber 300, where the gas is distributed in a predetermined manner on the surface (e.g., center, middle, side) of the substrate 303 being processed in the processing chamber 300.

[0026] In one embodiment, the nozzle assembly 330 is configured with a plurality of regions that allow individual control of the gas flowing into the processing volume 306 of the processing chamber 300. The nozzle assembly 330 includes a top delivery gas nozzle 335 configured to direct process gas toward a substrate support surface of the substrate support 348. Therefore, the top delivery gas nozzle 335 includes a center outlet 334 configured for central flow control and an intermediate outlet 336 configured for intermediate flow control, the center outlet and the intermediate outlet being individually coupled to a gas panel 358 via inlet ports 332', 332''. Furthermore, one or more side delivery gas nozzles may extend through the chamber body 302 and may be configured to direct process gas toward the side surfaces of the substrate support 348. For example, in at least some embodiments, the side delivery gas nozzle 333 may include a side outlet 337 configured for side flow control, which is individually coupled to the gas panel 358 via an inlet port 332. Unlike the center outlet 334 and intermediate outlet 336 disposed on the cover 304, the side outlet 337 is disposed in a generally circular manner along the interior of the sidewall 308 of the processing chamber. The center outlet 334 and intermediate outlet 336 are configured to provide process gas to substantially etch the central and intermediate regions of the substrate (e.g., between the center and the edge), and the side outlet 337 disposed thereal is configured to provide process gas to substantially etch the edge regions (or peripheries) of the substrate, as described in more detail below.

[0027] A substrate support 348 is disposed within the processing volume 306 of the processing chamber 300, below a gas distribution assembly (such as a nozzle assembly 330). For example, the substrate support 348 may be disposed below the nozzle assembly 330 such that the substrate is approximately 3 inches below the nozzle assembly 330. The substrate support 348 holds the substrate 303 during processing. The substrate support 348 typically includes a plurality of lifting pins (not shown) disposed therethrough, which are configured to lift the substrate 303 from the substrate support 348 and facilitate the exchange of the substrate 303 by a robot (not shown) in a conventional manner. A liner 318 may tightly surround the periphery of the substrate support 348.

[0028] The substrate support 348 includes a mounting plate 362, a base 364, and an electrostatic chuck 366. The mounting plate 362 is coupled to the bottom 310 of the chamber body 302 and includes channels for wiring facilities such as fluid, power lines, and sensor leads to the base 364 and the electrostatic chuck 366. The electrostatic chuck 366 includes clamping electrodes 380 for holding the substrate 303 below the nozzle assembly 330. The electrostatic chuck 366 is driven by a chuck power supply 382 to develop an electrostatic force that holds the substrate 303 to the chuck surface, as is conventionally known. Alternatively, the substrate 303 may be held to the substrate support 348 by clamping, vacuum, or gravity. In at least some embodiments, the substrate support 348 may be rotatable.

[0029] The base 364 or electrostatic chuck 366 may include a heater 376 (e.g., at least one optional embedded heater), at least one optional embedded isolator 374, and a plurality of conduits 368, 370 to control the lateral temperature distribution of the substrate support 348. The plurality of conduits 368, 370 are fluidly coupled to a fluid source 372 that circulates a temperature-regulating fluid through the conduits. The heater 376 is regulated by a power supply 378. The plurality of conduits 368, 370 and the heater 376 are used to control the temperature of the base 364, thereby heating and / or cooling the electrostatic chuck 366, and ultimately controlling the temperature distribution of the substrate 303 disposed thereon. A plurality of temperature sensors 390, 392 may be used to monitor the temperature of the electrostatic chuck 366 and the base 364. The electrostatic chuck 366 may further include a plurality of gas channels (not shown), such as grooves, formed in the substrate support base support surface of the electrostatic chuck 366, and fluidly coupled to a heat transfer (or back-side) gas source, such as helium (He). In operation, back-side gas is supplied to the gas channels at a controlled pressure to enhance heat transfer between the electrostatic chuck 366 and the substrate 303. In embodiments, the substrate temperature may be maintained from about -20°C to about 450°C. For example, in at least some embodiments, the substrate may be maintained from about -20°C to about 90°C.

[0030] The substrate support 348 is configured as a cathode and includes a clamping electrode 380 coupled to an RF bias power supply 384 and an RF bias power supply 386. The RF bias power supply 384 and the RF bias power supply 386 are coupled between the clamping electrode 380 disposed in the substrate support 348 and another electrode (such as the nozzle assembly 330 or the cover 304 of the chamber body 302). The RF bias power excites and sustains a plasma discharge formed by gas disposed in the processing area of ​​the chamber body 302.

[0031] RF bias power supplies 384 and 386 are coupled to clamping electrodes 380 disposed in substrate support 348 via matching circuit 388. Signals generated by RF bias power supplies 384 and 386 are delivered to substrate support 348 via matching circuit 388, passing through a single feed to ionize a gas mixture provided in a plasma processing chamber (such as processing chamber 300), thereby providing the ion energy necessary to perform etch deposition or other plasma enhancement processes. RF bias power supplies 384 and 386 are typically capable of generating RF signals with frequencies from about 50 kHz to about 200 MHz (e.g., 2 MHz) and power between about 0 watts and about 2500 watts. An additional bias power supply 389 may be coupled to clamping electrodes 380 to control plasma characteristics. Additionally, RF bias power supplies 384 and 386 may operate at a much shorter duty cycle (e.g., a second duty cycle) than the duty cycle in which the RF source power 343 operates. For example, RF bias power supplies 384 and 386 can operate at approximately 0.1% to approximately 20% of their duty cycles. In at least some embodiments, the on-time of the duty cycles of RF bias power supplies 384 and 386 has a pulse frequency of approximately 1 Hz to approximately 20 Hz.

[0032] Controller 350 (e.g., similar to controller 202) is coupled to processing chamber 300 to control the operation of processing chamber 300. Controller 350 includes a central processing unit 352, memory 354 (e.g., a non-transitory computer-readable storage medium), and support circuitry 356 for controlling process sequence and regulating gas flow from gas panel 358. Central processing unit 352 can be any form of general-purpose computer processor that can be used in an industrial environment. Software routines (e.g., stored executable instructions) can be stored in memory 354, such as random access memory, read-only memory, floppy disk or hard disk drives, or other forms of digital storage devices. Support circuitry 356 is typically coupled to central processing unit 352 and may include cache, clock circuitry, input / output systems, power supply, etc. Bidirectional communication between controller 350 and various components of processing chamber 300 is handled via a plurality of signal cables.

[0033] Continuing with reference to Figure 1, at 102, method 100 includes supplying a vaporized precursor from a gas supply to a processing volume of a processing chamber. For example, gas panel 358 may supply one or more vaporized precursors to a processing volume 306 of processing chamber 300 (e.g., one of processing chambers 214A to 214D) to deposit (develop) a gap-filling film (e.g., a flowable silicon film, such as SiOx) on a substrate (e.g., substrate 303). In at least some embodiments, gas panel 358 may supply a vaporized precursor comprising trisilylamine (TSA) to form a silazane-like film (SiNHx).

[0034] Next, at 104, method 100 includes supplying an activated element comprising ions and radicals from a remote plasma source. For example, the remote plasma source 377 may supply one or more activated elements, including argon, hydrogen (H2), ammonia (NH3), and / or oxygen (O2). For example, in at least some embodiments, the activated element may include at least one of ammonia radicals (NHx), H2 radicals, and argon ions.

[0035] Next, at 106, method 100 includes exciting the activated elements with RF source power during a first duty cycle to react with the vaporized precursor to deposit a film onto a substrate supported on a substrate holder disposed in the processing volume. For example, ammonia radicals can be excited via argon ions (e.g., from a remote plasma source) and reacted with the vaporized precursor (e.g., TSA). The reaction between the ammonia radicals and the vaporized precursor deposits a flowable polysilazane-based film (SiNHx) onto the substrate. During 106, the RF source power 343 can be from about 100 W to about 5000 W. For example, in at least some embodiments, the RF source power 343 can be about 100 W and is at a tunable frequency ranging from about 50 kHz to about 200 MHz (e.g., 13.56 MHz). Furthermore, the RF source power 343 can be from about 10% for pulsed operation to about 100% for continuous operation. Furthermore, at point 106, the temperature of the substrate can be maintained at approximately -20°C to approximately 90°C. In at least some embodiments, the temperature of the substrate can be maintained at approximately 20°C, for example, approximately room temperature. Additionally, at point 106, the pressure within the processing volume of the processing chamber can be maintained at a pressure of approximately 10 mTorr to 5 Torr.

[0036] Next, at 108, method 100 includes supplying a first process gas from a remote plasma source while simultaneously providing RF bias power to a substrate support at a second duty cycle different from the first duty cycle. For example, the remote plasma source 377 may supply one or more oxygen-containing gases to the processing volume 306 of the processing chamber 300. In at least some embodiments, the one or more oxygen-containing gases may be O2. O2 may be supplied to the processing volume 306 to convert SiNHx to SiOx, for example, thereby forming a SiOx network on the substrate. Additionally, at 108, the RF bias power supply 384 may operate at a duty cycle of about 0.1% to about 20%, may operate at a power level of about 500 W to about 2500 W (e.g., about 2000 W), and may operate at a pulse frequency of about 1 Hz to about 20 Hz. At 108, the RF source power and the RF bias power may be simultaneously provided to the nozzle 330 (or cap 304) and the substrate support 348, respectively.

[0037] Next, at 110, method 100 includes supplying a process gas mixture formed by a second process gas supplied from the remote plasma source and a third process gas supplied from the gas source, while simultaneously providing RF bias power to the substrate support during the second duty cycle. For example, the remote plasma source 377 may supply one or more inert (rare) gases. In at least some embodiments, the remote plasma source 377 may supply argon. Similarly, the gas panel 358 may also supply one or more inert gases. In at least some embodiments, the gas panel 358 may supply helium. Alternatively or additionally, each of the remote plasma source 377 and the gas panel 358 may be configured to supply both the second and third process gases. Other inert gases may also be used. The inventors have discovered that by supplying a gas mixture at 110, simultaneously providing RF source power to the nozzle during a first duty cycle and RF bias power to the substrate support during a second duty cycle, densification and stabilization of the SiOx film are promoted. This helps the SiOx film withstand the high-temperature / high-pressure annealing process after deposition, as described below. In at least some embodiments, one or more additional gases may also be provided during 108 and 110. For example, one or more hydrogen-containing gases may be provided. In at least some embodiments, H2 may be provided simultaneously with the supply of O2 at 108 and / or simultaneously with the supply of the process gas mixture at 110.

[0038] In at least some embodiments, the RF source power and RF bias power can be provided sequentially in a closed-loop gas processing scheme. For example, in at least some embodiments, after step 110, steps 102 to 110 can be repeated as needed (e.g., in a cyclic mode) until the desired thickness of the SiOx film is obtained. For this purpose, process parameters (such as thickness per cycle) and processing conditions (e.g., source / bias power, pulse frequency, duty cycle, process gas, temperature, pressure, on-time, etc.) can be varied to tune the composition of the SiOx film. Furthermore, to facilitate obtaining a uniform SiOx film, the substrate support 348 can be rotated during any of steps 102 to 110. For example, the substrate support 348 can be rotated during steps 108 and 110.

[0039] The quality of the SiOx film can be further improved by high-temperature / high-pressure annealing, which helps to increase the refractive index and reduce the hydrogen content across the entire thickness of the SiOx film. Therefore, at 112, method 100 includes annealing the substrate. For example, after 110, a vacuum robot 242 disposed within the transfer chamber 203 of tool 200 can transfer the substrate 303 from processing chamber 300 (e.g., processing chamber 214A) to one or more other processing chambers (e.g., processing chamber 214B) to anneal the substrate. In at least some embodiments, annealing the substrate includes maintaining the substrate at a temperature of about 500°C, maintaining the processing volume of processing chamber 214B at a pressure of about 10 mTorr to about 37,500 Torr (70 bar), and supplying one or more process gases, such as Ar, CO2, D2, H2, N2, and O2, to the processing volume during annealing.

[0040] Although the foregoing are embodiments of the present disclosure, other and further embodiments of the present disclosure may be designed without departing from the basic scope of the present disclosure. [Simplified Explanation of the Diagram]

[0007] The embodiments of this disclosure, which have been briefly summarized above and are discussed in more detail below, can be understood by referring to the illustrative embodiments depicted in the accompanying drawings. However, the drawings only illustrate typical embodiments of this disclosure and should not be considered as limiting the scope, as this disclosure may allow for other equally effective embodiments.

[0008] Figure 1 is a flowchart of a method for processing a substrate according to at least some embodiments of the present disclosure.

[0009] Figure 2 is a schematic diagram of an apparatus according to at least some embodiments of the present disclosure.

[0010] Figure 3 is a cross-sectional view of a processing chamber according to at least some embodiments of the present disclosure.

[0011] To facilitate understanding, the same reference numerals are used to denote common elements in the drawings where possible. The drawings are not drawn to scale and may be simplified for clarity. Elements and features of one embodiment may be advantageously incorporated into other embodiments without further description.

Claims

1. A method for processing a substrate, comprising the steps of: supplying a vaporized precursor from a gas supply to a processing volume of a processing chamber; supplying activated elements comprising ions and free radicals from a remote plasma source; exciting the activated elements with RF source power in a first duty cycle to react with the vaporized precursor to deposit a SiNHx film onto a substrate supported on a substrate support disposed in the processing volume; supplying a first process gas from the remote plasma source while simultaneously providing RF bias power to the substrate support in a second duty cycle different from the first duty cycle to convert the SiNHx film into a SiOx film; A process gas mixture is supplied, consisting of a second process gas supplied from the remote plasma source and a third process gas supplied from the gas source. Simultaneously, RF source power is supplied to a nozzle and the substrate support during the first operating cycle and RF bias power is supplied during the second operating cycle, respectively, to promote the densification and stabilization of the SiOx film and to withstand the high-temperature and high-pressure annealing process after deposition; and the substrate is annealed.

2. The method as claimed in claim 1, wherein the first duty cycle is from about 10% to about 100%, and wherein the second duty cycle is from about 0.1% to about 20%, and wherein an on-time of the second duty cycle has a pulse frequency of from about 1 Hz to about 20 Hz.

3. The method as described in claim 1, wherein the step of annealing the substrate includes the following steps: heating the substrate to a temperature of approximately 500°C.

4. The method as described in claim 1, further comprising the step of: sequentially providing the RF source power and the RF bias power in a closed-loop gas processing scheme.

5. The method as described in claim 1, further comprising the step of rotating the substrate support.

6. The method as described in claim 1 further includes the step of: maintaining a temperature of the substrate at about -20°C to about 90°C while supplying the activated elements.

7. The method as described in claim 1 further includes the step of maintaining a pressure of about 10 millitor to 5 tort while supplying the activated elements.

8. The method as described in claim 1, wherein the processing chamber is a plasma-enhanced chemical vapor deposition chamber.

9. The method as described in claim 1, wherein the RF source power is about 100 W, and wherein the RF bias power is about 500 W to about 2500 W.

10. The method as described in claim 1, wherein the step of supplying the activated elements from the remote plasma source includes the step of supplying at least one of ammonia radicals, H2 radicals, or argon ions.

11. The method as described in claim 1, wherein the step of supplying the first process gas includes the step of supplying an oxide.

12. The method as described in claim 1, wherein the step of supplying the second process gas and the third process gas includes the steps of supplying argon and helium respectively.

13. The method as described in any one of claims 1 to 12, wherein the step of supplying the vaporized precursor includes the step of supplying trisilylamine.

14. A non-transitory computer-readable storage medium storing instructions that, when executed by a processor, perform a method for processing a substrate, the method comprising the steps of: supplying a vaporized precursor from a gas supply to a processing volume of a processing chamber; supplying activated elements comprising ions and radicals from a remote plasma source; exciting the activated elements with RF source power in a first duty cycle to react with the vaporized precursor to deposit a SiNHx film onto a substrate supported on a substrate support disposed in the processing volume; supplying a first process gas from the remote plasma source while simultaneously providing RF bias power to the substrate support in a second duty cycle different from the first duty cycle to convert the SiNHx film into a SiOx film; A process gas mixture is supplied, consisting of a second process gas supplied from the remote plasma source and a third process gas supplied from the gas source. Simultaneously, RF source power is supplied to a nozzle and the substrate support during the first operating cycle and RF bias power is supplied during the second operating cycle, respectively, to promote the densification and stabilization of the SiOx film and to withstand the high-temperature and high-pressure annealing process after deposition; and the substrate is annealed.

15. The non-transitory computer-readable storage medium as described in claim 14, wherein the first duty cycle is from about 10% to about 100%, and wherein the second duty cycle is from about 0.1% to about 20%, and wherein an on-time of the second duty cycle has a pulse frequency of from about 1 Hz to about 20 Hz.

16. The non-transitory computer-readable storage medium as described in claim 14, wherein the step of annealing the substrate includes the step of heating the substrate to a temperature of approximately 500°C.

17. The non-transitory computer-readable storage medium as described in claim 14, the method further comprising the steps of: sequentially providing the RF source power and the RF bias power in a closed-loop gas processing scheme.

18. A chemical vapor deposition chamber for processing a substrate, comprising: A substrate support is disposed in a processing volume of the chemical vapor deposition chamber; A remote plasma source coupled to the chemical vapor deposition chamber and configured to supply activated elements to a nozzle in the processing volume; An RF source power, which is coupled to the nozzle and configured to provide RF source power in a first duty cycle; An RF bias power source is coupled to the substrate support and configured to provide RF bias power to the substrate support in a second operating cycle different from the first operating cycle; A gas supply is coupled to the chemical vapor deposition chamber and configured to supply process gas to the nozzle disposed in the processing volume; And a controller configured to: supply a vaporized precursor from the gas supply to the processing volume of the chemical vapor deposition chamber; supply activated elements comprising ions and radicals from the remote plasma source; excite the activated elements with RF source power during the first duty cycle to react with the vaporized precursor to deposit a SiNHx film onto a substrate supported on a substrate support disposed in the processing volume; supply a first process gas from the remote plasma source while simultaneously providing RF bias power to the substrate support during the second duty cycle to convert the SiNHx film into a SiOx film; A process gas mixture is supplied, consisting of a second process gas supplied from the remote plasma source and a third process gas supplied from the gas source. Simultaneously, RF source power is supplied to a nozzle and the substrate support during the first operating cycle and RF bias power is supplied during the second operating cycle, respectively, to promote the densification and stabilization of the SiOx film and to withstand the high-temperature and high-pressure annealing process after deposition; and the substrate is annealed.

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