Showerhead assembly with heated showerhead

Abstract

Methods and apparatus for substrate processing are described. In some embodiments, a nozzle assembly includes a heated nozzle having a heater and a gas diffuser plate coupled to the heater, the gas diffuser plate having a plurality of channels extending through the gas diffuser plate; an ion filter spaced apart from the heated nozzle, the ion filter having a first side facing the heated nozzle and a second side opposite to the first side, the ion filter having a plurality of channels extending through the ion filter; a heat transfer ring contacting between the heated nozzle and the ion filter, the heat transfer ring being thermally conductive and electrically insulating, the heat transfer ring including a plurality of elements spaced apart from each other along the interface between the heated nozzle and the ion filter; and a remote plasma region defined between the heated nozzle and the ion filter.

Description

Nozzle assembly with heated nozzle The embodiments disclosed herein are generally related to semiconductor processing apparatus, and more particularly to nozzle assemblies used in semiconductor processing apparatus. Substrate processing equipment typically includes processing chambers configured to perform certain processes (such as chemical vapor deposition, atomic layer deposition, etching, etc.) on a substrate. Some processing chambers may use nozzles to distribute processing gases onto the substrate during certain processes, such as plasma processing. However, the inventors have observed that in some applications, when the temperature of the nozzle (or a portion thereof) is too low, a certain amount of material condensation from the plasma occurs, resulting in a reduction in the deposition density of the material on the substrate. Therefore, the inventors have provided embodiments of the improved nozzle as disclosed herein. This document provides methods and apparatus for substrate processing. In some embodiments, a nozzle assembly for use in a processing chamber includes: a heating nozzle having a heater and a gas diffuser plate coupled to the heater, the gas diffuser plate having a plurality of channels extending through the gas diffuser plate; an ion filter spaced apart from the heating nozzle, the ion filter having a first side facing the heating nozzle and a second side opposite to the first side, the ion filter having a plurality of channels extending through the ion filter; a heat transfer ring contacting between the heating nozzle and the ion filter, the heat transfer ring being thermally conductive and electrically insulating, configured to transfer heat from the heating nozzle to the ion filter, the heat transfer ring including a plurality of elements spaced apart from each other along the interface between the heating nozzle and the ion filter; and a remote plasma region defined between the heating nozzle and the ion filter. In some embodiments, a nozzle assembly for use in a processing chamber includes: a heated nozzle having a gas diffuser plate and a heater plate connected to the gas diffuser plate, the heater plate extending parallel to and axially spaced from the gas diffuser plate to define a first gas chamber between the gas diffuser plate and the heater plate, the gas diffuser plate having a plurality of channels extending through the gas diffuser plate, and the heated nozzle having a first flange surrounding the plurality of channels of the gas diffuser plate; an ion filter spaced apart from the heated nozzle, the ion filter having a first side facing the heated nozzle and a side adjacent to the first side. On the opposite second side, the ion filter has a plurality of channels extending through the ion filter; the ion filter has a second flange surrounding the plurality of channels of the ion filter; the ion filter is axially spaced from the gas diffuser to define a second gas chamber between the gas diffuser and the ion filter; and a heat transfer ring that contacts between the first flange and the second flange; the heat transfer ring is thermally conductive and configured to transfer heat from the heating nozzle to the ion filter; the heat transfer ring is electrically insulated; and the heat transfer ring includes a plurality of elements spaced apart from each other along the interface between the first flange and the second flange. In some embodiments, a processing chamber includes: a chamber body having an internal volume; a substrate support disposed within the internal volume; and a nozzle assembly disposed within the internal volume opposite to the substrate support, wherein the nozzle assembly includes: a heating nozzle having a heater and a gas diffuser plate coupled to the heater, the gas diffuser plate having a plurality of channels extending through the gas diffuser plate; and an ion filter spaced apart from the heating nozzle, the ion filter having a first side facing the heating nozzle and a second side opposite to the first side. On both sides, the ion filter has a plurality of channels extending through the ion filter; a heat transfer ring that contacts the heating nozzle and the ion filter, the heat transfer ring being configured to transfer heat from the heating nozzle to the ion filter, the ion filter being thermally conductive and electrically insulating, the heat transfer ring including a plurality of elements spaced apart from each other along the interface between the heating nozzle and the ion filter; a remote plasma region defined between the heating nozzle and the ion filter; and a direct plasma region defined between the ion filter and the substrate support. Other and further embodiments disclosed herein are described below. Embodiments of apparatus and methods for supplying plasma to a processing chamber are described, which can reduce or eliminate material condensation from the plasma. The inventors have observed that some nozzles in a plasma processing chamber operate at temperatures that allow material to condense from the plasma before reaching the substrate. This condensation can reduce the deposition density and / or uniformity of the material deposited on the substrate. According to one embodiment, a nozzle assembly is described comprising a heated nozzle, an ion filter, and a heat transfer ring that transfers heat from the heated nozzle to the ion filter to raise and control the temperature of the entire nozzle assembly above the material condensation temperature in the plasma, thereby improving the deposition density and / or uniformity of the material deposited on the substrate. Figure 1 shows a method suitable for depositing materials (e.g., TiCl) on a substrate. 3) A partial cross-sectional view of the processing chamber 100. The processing chamber 100 can be any processing chamber suitable for plasma-enhanced semiconductor processing, such as a processing chamber configured to perform plasma-assisted chemical vapor deposition (CVD) or atomic layer deposition (ALD) processes. An exemplary processing chamber may include ENDURA, available from Applied Materials, Inc. of Santa Clara, California. ® PRODUCER ® Or CENTURA ® Platform processing chambers or other processing chambers. Other processing systems, including those manufactured by other manufacturers, may benefit from the embodiments described herein. Therefore, in some embodiments and as shown in Figure 1, the processing chamber 100 includes a chamber body 102 having a cover 104, sidewalls 106, and a bottom wall 108, which define an internal volume 110. A base 112 is disposed within the internal volume 110 of the processing chamber 100. The base 112 may be made of aluminum, ceramic, or other suitable materials. In some embodiments, the base 112 is made of a ceramic material (such as aluminum nitride) that is suitable for high-temperature environments (such as plasma processing environments) without causing thermal damage to the base 112. The base 112 can be moved vertically along axis AA within the internal volume 110 using a lifting mechanism (not shown). The base 112 may include an embedded heater element 114 adapted to control the temperature of a substrate 116 supported on the base 112. In some embodiments, the base 112 may be resistively heated by applying current from a power source 118 to the heater element 114. In some embodiments, the heater element 114 may be encapsulated in a nickel-iron-chromium alloy (e.g., INCOLOY). ® The sheath tube is made of nickel-chromium wire. The current supplied by power supply 118 is regulated by controller 120 to control the heat generated by heater element 114, thereby maintaining the substrate 116 and base 112 at a substantially constant temperature within any suitable temperature range during film deposition. A temperature sensor 122, such as a thermocouple, may be embedded in the base 112 to monitor the temperature of the base 112 in a conventional manner. The controller 120 uses the measured temperature to control the power supplied to the heater element 114 to maintain the substrate at the desired temperature. The base 112 typically includes a plurality of lifting pins (not shown) disposed therethrough, which are configured to lift the substrate 116 from the base 112 and facilitate the replacement of the substrate 116 by a robot (not shown) in a conventional manner. A vacuum pump 124 is coupled to a port formed in the bottom wall 108 of the chamber body 102 and to a pumping ring 126 surrounding a base 112. The pumping ring 126 has a fluid passage 127 in fluid communication with the processing volume 178. The vacuum pump 124 is used to maintain the desired gas pressure in the processing chamber 100. The vacuum pump 124 also removes processed gases and process byproducts from the processing chamber 100 via the pumping ring 126. In some embodiments, and as shown in Figure 1, the cover 104 includes a plurality of fluid channels 104a extending within the cover. The fluid channels 104a are fluidly coupled to a supply of a heat transfer fluid (e.g., water). The fluid channels 104a are configured to allow the heat transfer fluid to flow in order to control the temperature of the cover 104 and the internal volume 110. The cover 104 also includes an opening 128 through which a plurality of gas conduits 130 extend. In some embodiments, the cover 104 may be formed of aluminum. In some embodiments, and as shown in Figure 1, the gas conduits 130 are at least partially surrounded by an outer tube 132 extending downward from the cover 104 and a bellows 134 extending downward from the outer tube 132. Bellows 134 supports nozzle assembly 140. In an embodiment, bellows 134 allows nozzle assembly 140 to move in an axial direction along axis AA. Furthermore, nozzle assembly 140 is supported by insulating ring 142, which is supported by pumping ring 126. Insulating ring 142 may comprise any process-compatible electrically insulating material. For example, in some embodiments, the electrically insulating ring may be made of quartz (SiO₂). 2) Sintered ceramics (such as alumina (Al) 2O 3) Or silicon nitride (SiN) or single-crystal sapphire (Al) 2O 3) Made. The nozzle assembly 140 includes a heated nozzle 144, an ion filter 146, and a heat transfer ring 180 that contacts the heated nozzle 144 and the ion filter 146. The heated nozzle 144 includes a heater plate having a central opening through which a gas conduit 130 extends. The heater plate 148 is connected to the bellows 134 along its upper side. In embodiments, the heater plate 148 may include an embedded heater element 150 adapted to control the temperature of the nozzle assembly 140. In some embodiments, the heater plate 148 may be resistively heated by applying current from a power source 152 to the heater element 150. In some embodiments, the heating element 150 may be encapsulated in a nickel-iron-chromium alloy (e.g., INCOLOY). ® The sheath tube is made of nickel-chromium wire. The current supplied from the power supply 152 is regulated by the controller 154 to control the heat generated by the heater element 150, thereby maintaining the ion filter 146 at a substantially constant temperature within any suitable temperature range during membrane deposition. The supplied current can be adjusted to selectively control the temperature of the ion filter above 575 degrees Celsius. A temperature sensor 156, such as a thermocouple, may be embedded in the ion filter 146 to monitor the temperature of the ion filter 146. Since the ion filter 146 is located in the area of ​​the nozzle assembly 140 where plasma will be present and condensation may occur, the temperature of the ion filter 146 is used to control the heater element 150. Therefore, in some embodiments, and as shown in Figure 1, the controller 154 uses the measured temperature of the ion filter 146 to control the power supplied to the heater element 150 to maintain the ion filter 146 at a desired temperature above the condensation temperature of the material in the plasma. The heating nozzle 144 also includes a gas diffuser 158 extending parallel to the heater plate 148. In some embodiments, and as shown in Figure 1, the gas diffuser 158 and the heater plate 148 are connected at their respective outer edges 158a and 148a, defining a first gas chamber 160. The gas diffuser 158 includes a plurality of through holes 158b that allow gas to flow from the gas conduit 130 through the gas diffuser 158. In some embodiments, the heater plate 148 and the gas diffuser 158 may be formed of nickel. An ion filter 146 extends parallel to and axially spaced from a gas diffuser 158. A second gas chamber 162 is defined between the ion filter 146 and the gas diffuser 158. In some embodiments, and as shown in Figure 1, the ion filter 146 has a flange 146a with an upper side 164 facing the heating nozzle 144. Furthermore, the flange 146a of the ion filter 146 has a lower side 166 facing the insulating ring 142. The flanges 144a and 146a include corresponding recesses 168 and 170 that define an interface between the heating nozzle 144 and the ion filter 146. The recesses 168 and 170 may extend along a circular interface centered on axis AA. In some embodiments, and as shown in Figure 1, the recesses 168 and 170 may have an arcuate cross-sectional profile, but other shapes may also be used. The ion filter 146 includes a plurality of through-holes 146b that allow gas to flow through the ion filter 146. In some embodiments, the ion filter 146 may be formed of nickel. In some embodiments, through-holes 158b in the gas diffuser 158 and through-holes 146b in the ion filter 146 can be used to introduce gas from the gas panel 172 via the gas conduit 130 and the nozzle assembly 140 into the processing chamber 100. The through-holes 158b and 146b can have different sizes, numbers, distributions, shapes, designs, and diameters to facilitate the flow of various processing gases for different processing purposes. For example, in some embodiments, plasma can be formed from the processing gas mixture exiting the nozzle assembly 140 to enhance the thermal decomposition of the processing gases in the mixture, resulting in material deposition on the substrate surface. A heat transfer ring 180 is seated at the interface between flanges 144a and 146a in recesses 168 and 170. The heat transfer ring 180 is thermally conductive and electrically insulating. In some embodiments, the heat transfer ring 180 is formed of aluminum nitride. As illustrated in more detail in Figure 2, and in some embodiments, the heat transfer ring 180 includes a plurality of elements 182 configured to be arranged along the interface. In the exemplary embodiment shown in Figure 2, the elements 182 are formed as arcuate segments and arranged along a circle. The elements 182 are spaced apart from each other by gaps 184 of sufficient size to allow the elements 182 to expand based on the coefficient of thermal expansion of the material of the elements 182, and to fill the gaps without breaking or otherwise damaging the elements 182 when the elements 182 are at or above a predetermined temperature. In one example, at room temperature, the gaps 184 between the elements are about 5 mm to 7 mm to allow the elements to expand at processing temperatures of 575 degrees Celsius to 600 degrees Celsius. Furthermore, since the gap 184 between the elements 182 may create a leakage path if it is not closed or restricted, the temperature of the heat transfer ring 180 can be increased in operation to cause the elements 182 to expand in order to reduce the size of the gap 184 before the gas is introduced into the nozzle assembly 140 via the gas conduit 130. In some embodiments, and as shown in Figure 3, the cross-section of element 182 may be a circular cross-section or a tubular cross-section. In some embodiments, the heat transfer ring 180 includes at least fifteen elements. In some embodiments, the heat transfer ring includes eighteen to thirty-six elements. As shown in Figure 1, when the heat transfer ring 180 is seated in the recesses 168 and 170, the flanges 144a and 146a are spaced apart from each other by the gap 174. Therefore, in some embodiments, the heated nozzle 144 and the ion filter 146 are not in direct contact with each other, but are indirectly connected only by the heat transfer ring 180. In some embodiments, the gap 174 is about 5 mm to 7 mm. The gap 174 provides plasma confinement features for the remote plasma in the second gas chamber 162. The gap 174 is in fluid communication with the second gas chamber 162. In an embodiment, the gap 174 is in fluid communication with the purification channel 196 and the purification gas supply 198. In an embodiment, the purification gas can be introduced into the second gas chamber 162 via the purification channel 196 and the gap 174 before the treatment gas is introduced into the nozzle assembly 140 via the gas conduit 130. In some embodiments, and as shown in Figure 1, the flange 146a of the ion filter 146 may be spaced apart from the insulating ring 142 by a gap 176. The gap 176 may be about 5 mm to 7 mm. The gap 176 may facilitate direct plasma confinement between the ion filter 146 and the substrate 116. The gap 176 is in fluid communication with the processing volume 178 between the ion filter 146 and the substrate 116. In some embodiments, the gap 176 is in fluid communication with the purification channel 197 and the purification gas supply 199. In some embodiments, the purification gas may flow from the purification channel 197 and the gap 176 into the processing volume 178 before the processing gas is introduced from the gas conduit 130 into the nozzle assembly 140. The pumping ring 126 is also in fluid communication with the processing volume 178. The purification gas in the processing volume 178 may be discharged from the processing volume 178 via the pumping ring 126. The heating nozzle 144, ion filter 146, and base 112 can be configured as electrodes. In one example, the base 112 includes at least one electrode 192 for holding the substrate 116 on the base 112. The electrode 192 is driven by a clamping power supply 188 to develop an electrostatic force that holds the substrate 116 to the surface of the base, as is conventional. Alternatively, the substrate 116 can be held to the base 112 by clamping, vacuum, or gravity. In some embodiments, the base 112 is configured as a cathode having an electrode 192 embedded therein, which is coupled to RF bias power supplies 185, 186. Although the exemplary embodiment depicted in Figure 1 illustrates two RF bias power supplies 185, 186, the number of RF bias power supplies can be any desired number. RF bias power supplies 185, 186 are coupled between the electrode 192 disposed in the base 112 and another electrode (such as a heated nozzle 144, an ion filter 146, or a cover 104 of the processing chamber 100). One or both of the RF bias power supplies 185, 186 excite and sustain a plasma discharge formed by a gas disposed in the processing volume 178 of the processing chamber 100. In the embodiment depicted in Figure 1, dual RF bias power supplies 185, 186 are coupled to electrodes 192 disposed in the base 112 via a matching circuit 194. Signals generated by the RF bias power supplies 185, 186 are transmitted to the base 112 via a single feed through the matching circuit 194 to ionize the gas mixture provided in the processing chamber 100, thereby providing the ion energy necessary to perform deposition or other plasma-enhanced processes. The RF bias power supplies 185, 186 are typically capable of generating RF signals with frequencies from about 50 kHz to about 200 MHz and power between about 0 watts and about 5000 watts. One or more RF sources 147 provide a bias potential to the nozzle assembly 140 via a matching network to facilitate plasma generation between the nozzle assembly 140 and the base 112. Alternatively, the RF source 147 and the matching network 145 may be coupled to the nozzle assembly 140, the base 112, or both, or to an antenna (not shown) located outside the processing chamber 100. In some embodiments, the RF source 147 may provide between about 10 watts and about 3000 watts at a frequency of about 30 kHz to about 13.6 MHz. Alternatively, the RF source 147 may be a microwave generator that provides microwave power to the heated nozzle 144, which helps to generate plasma within the internal volume 110. Gas diffuser 158 includes a plurality of through-holes 158b that fluidly couple a first gas chamber 160 to a second gas chamber 162, allowing process gases in the first gas chamber 160 to pass through the gas diffuser 158 and enter the second gas chamber 162. Ion filter 146 includes a plurality of through-holes 146b to allow activated substances (e.g., free radicals) generated in the plasma to flow from the second gas chamber 162 to the processing volume 178 of the processing chamber 100. The second gas chamber 162 provides a second cavity or space to allow ignition of the process gases to form plasma and further allow plasma accumulation to facilitate dispersion of plasma material via the through-holes 146b. In some embodiments, during plasma processing, vacuum pump 124 provides a negative pressure in the processing volume 178 relative to the second gas chamber 162, thereby allowing material in the second gas chamber 162 to flow into the processing volume 178. Compared to a plasma source that can be formed using a single cavity, providing multiple regions (e.g., in the second chamber 162 and the processing volume 178) for the plasma to be formed provides multiple excitation stages for the plasma to promote enhanced free radical generation. Before use in plasma processing, the nozzle assembly 140 can be seasoned, for example, by coating its surface with TiN. This seasoning also controls metal from the nozzle assembly to prevent contamination of the substrate during plasma processing. The gas conduit 130 can be connected to various gases (such as TiCl). 4. N 2 and NH 3) Supply. In at least some embodiments, the first gas chamber 160 can be supplied with N from the gas conduit 130. 2. Purification: The second gas chamber 162 can be supplied with N2 via gap 174. 2. Purification, and the processing volume 178 can be supplied with N via gap 176. 2. Purification. Once purified, TiCl 4 and NH TiCl3 is introduced separately into the first gas chamber 160 and heated and mixed in the first gas chamber 160 while the heater is operating and the temperature of the ion filter 146 is at or above 575 degrees Celsius. This process is achieved by mixing and heating TiCl3 in the first gas chamber. 4 and NH 3. TiCl can be minimized 4 and NH The low-temperature mixing of 3 promotes thermal TiN quaternization. Once the nozzle assembly 140 has been thermally quaternized, the first gas chamber 160, the second gas chamber 162, and the treatment volume 178 can be purified again as described above before the reactant gas is introduced into the nozzle assembly 140 via the gas conduit 130 for plasma treatment. Figure 4 illustrates a plasma treatment method 400 according to this disclosure. This method can be performed after the quaternization nozzle assembly 140. The exemplary method described herein is performed on TiCl... 4. Deposition of TiCl The method is described in the context of 3. However, it is not limited to such materials. At block 402, heater element 150 is turned on to raise the temperature of ion filter 146 to a desired temperature at which the substance in the gas plasma will not condense (e.g., at least 575 degrees Celsius). At block 404, the processed gas (e.g., H₂) is... 2. TiCl 4) The process gas is introduced separately into the first gas chamber 160 via the gas panel 172 and the gas conduit 130. The process gas is mixed and heated in the first gas chamber 160 and flows into the second gas chamber 162 via the through-hole 158b of the gas diffuser plate 158. At block 406, plasma is generated in the second gas chamber 162 and the process volume 178. At block 408, the material in the second gas chamber 162 (e.g., TiCl) 3) The material flows through the through-hole 146b of the ion filter 146, allowing it to flow into the processing volume 178 and deposit on the surface of the substrate 116. By maintaining the temperature of the ion filter 146 above the temperature at which the material condenses in the plasma, improved material density and uniformity along the substrate 116 can be achieved. Although the foregoing are embodiments of this disclosure, other and further embodiments of this disclosure may be designed without departing from the basic scope of this disclosure. 100: Processing chamber; 102: Chamber body; 104: Cover; 104a: Fluid channel; 106: Side wall; 108: Bottom wall; 110: Internal volume; 112: Base; 114: Embedded heater element; 116: Substrate; 118: Power supply; 120: Controller; 122: Temperature sensor; 124: Vacuum pump; 126: Pumping ring; 127: Fluid passage; 128: Opening; 130: Gas conduit; 132: Outer tube; 134: Bellows; 140: Nozzle assembly; 142: Insulating ring; 144: Heated nozzle; 144a: Flange; 145: Matching network; 146: Ion filter; 146a: Flange; 146b: Through hole; 147: RF source; 148: Heater plate; 148a: Outer edge; 150: Heater element; 152: Power supply; 154 Controller 156: Temperature sensor 158: Gas diffuser 158a: Outer edge 158b: Through hole 160: First gas chamber 162: Second gas chamber 164: Upper side 166: Lower side 168: Groove 170: Groove 172: Gas panel 174: Gap 176: Gap 178: Processing volume 180: Heat transfer ring 182: Component 184: Gap 185: RF bias power supply 186: RF bias power supply 188: Clamping power supply 192: Electrode 194: Matching circuit 196: Purification channel 197: Purification channel 198: Purification gas supply 199: Purification gas supply 400: Plasma treatment method 402: Block 404: Block 406: Block 408: Block AA: Axis 3-3: Line The embodiments of this disclosure, which have been briefly summarized above and are discussed in more detail below, can be understood by referring to the illustrative embodiments depicted in the accompanying drawings. However, the drawings only illustrate typical embodiments of this disclosure and should not be considered as limiting the scope, as this disclosure may allow for other equally effective embodiments. Figure 1 is a partial schematic cross-sectional view of a processing chamber according to at least some embodiments of the present disclosure. Figure 2 is a plan view of a heat transfer ring according to at least some embodiments of the present disclosure. Figure 3 is a cross-sectional view of the heat transfer loop in Figure 2 along line 3-3. Figure 4 is a flowchart of a plasma processing method according to at least some embodiments of the present disclosure. To facilitate understanding, the same reference numerals are used to denote common elements in the figures where possible. The figures are not drawn to scale and may be simplified for clarity. Elements and features of one embodiment may be advantageously incorporated into other embodiments without further description. Domestic storage information (please note in order of storage institution, date, and number): None. International storage information (please note in order of storage country, institution, date, and number): None. 100: Processing Chamber 102: Main body of the chamber 104: Cover 104a: Fluid Channel 106: Sidewall 108: Bottom wall 110: Internal volume 112: Base 114: Embedded heater element 116:Substrate 118: Power Supply 120: Controller 122: Temperature sensor 124: Vacuum pump 126: Pumping Ring 127: Fluid Pathway 128: Opening 130: Gas conduit 132: External pipe 134: Corrugated pipe 140: Nozzle assembly 142: Insulating ring 144: Heated nozzle 144a: Flange 145: Matching network 146: Ion Filter 146a: Flange 146b: Through hole 147: RF source 148: Heater plate 148a: Outer edge 150: Heater element 152: Power Supply 154: Controller 156: Temperature sensor 158: Gas Diffuser 158a: Outer edge 158b: Through hole 160: First air chamber 162: Second air chamber 164: Upper side 166: Lower side 168: Groove 170: Groove 172: Gas Panel 174: Gap 176: Gap 178: Processing volume 180: Heat transfer ring 185: RF bias power supply 186: RF bias power supply 188: Clamping Power Supply 192: Electrode 194: Matching Circuit 196: Purification Channel 197: Purification Channel 198: Purified Gas Supply 199: Purified Gas Supply

Claims

1. A nozzle assembly for use in a processing chamber, comprising: A heating nozzle having a heater and a gas diffuser plate coupled to the heater, the gas diffuser plate having a plurality of channels extending through the gas diffuser plate; an ion filter spaced apart from the heating nozzle, the ion filter having a first side facing the heating nozzle and a second side opposite to the first side, the ion filter having a plurality of channels extending through the ion filter; a heat transfer ring in contact with the heating nozzle and the ion filter, the heat transfer ring being thermally conductive and electrically insulating, the heat transfer ring including a plurality of elements separated from each other along an interface between the heating nozzle and the ion filter; and a remote plasma region defined between the heating nozzle and the ion filter.

2. The nozzle assembly as claimed in claim 1, wherein the plurality of elements have a circular cross-section.

3. The nozzle assembly as claimed in claim 2, wherein the plurality of elements are circumferentially spaced apart from each other by a gap of 0.5 mm to 0.7 mm.

4. The nozzle assembly as claimed in claim 1, wherein the plurality of elements are formed of aluminum nitride.

5. The nozzle assembly as claimed in claim 1, wherein the heat transfer ring is disposed between an outer edge of the heated nozzle and an outer edge of the ion filter, and further includes a gap between the outer edge of the heated nozzle and the outer edge of the ion filter, the gap being 0.5 mm to 0.7 mm.

6. The nozzle assembly as claimed in claim 5, wherein the gap is coupled to a purification channel configured to guide purification gas into the gap.

7. The nozzle assembly as claimed in claim 5, wherein when the heater operates at a temperature of at least 750 degrees Celsius, the heater generates at least 4 kW to maintain a temperature of the ion filter at or above 575 degrees Celsius.

8. The nozzle assembly as described in any one of claims 1 to 7, wherein the heated nozzle and the ion filter are formed of nickel.

9. The nozzle assembly as described in any one of claims 1 to 7, wherein: The heater includes a heater plate connected to the gas diffuser plate, the heater plate extending parallel to and axially spaced from the gas diffuser plate to define a first gas chamber between the gas diffuser plate and the heater plate, and a heating nozzle having a first flange surrounding the plurality of channels of the gas diffuser plate, and an ion filter having a second flange surrounding the plurality of channels of the ion filter, the ion filter being axially spaced from the gas diffuser plate to define a second gas chamber between the gas diffuser plate and the ion filter, and a heat transfer ring contacting between the first flange and the second flange, the heat transfer ring being configured to transfer heat from the heating nozzle to the ion filter, wherein the interface is between the first flange and the second flange.

10. The nozzle assembly as claimed in claim 9, wherein the plurality of elements comprises at least 15 elements, and wherein the plurality of elements has a coefficient of thermal expansion sufficient to close the gap between the elements when the temperature of the ion filter is above 575 degrees Celsius.

11. The nozzle assembly as claimed in claim 9, wherein the heat transfer ring is formed of aluminum nitride.

12. The nozzle assembly as claimed in claim 9 further includes a gap between the first flange and the second flange, the gap being in fluid communication with the second air chamber, the gap being 0.5 mm to 0.7 mm.

13. The nozzle assembly as claimed in claim 12, wherein the gap is coupled to a purification channel configured to guide purification gas into the gap.

14. A processing chamber, comprising: A chamber body having an internal volume; A substrate support disposed within the internal volume; a nozzle assembly disposed within the internal volume opposite to the substrate support, wherein the nozzle assembly is as described in any one of claims 1 to 5; and a direct plasma region defined between the ion filter and the substrate support.

15. The processing chamber as claimed in claim 14, wherein the chamber body includes a cover coupled to the nozzle assembly, and further includes a plurality of gas conduits extending between the cover and the heating nozzle, wherein the cover includes fluid channels fluidly coupled to a supply of a heat transfer fluid.

16. The processing chamber as described in claim 14, further comprising: An insulating ring supports the ion filter spaced above the substrate support; And a pumping ring supporting the insulating ring, wherein the insulating ring is at least partially disposed between the ion filter and the pumping ring, wherein a gap is defined between the insulating ring and the ion filter, the gap being coupled to a purified gas supply and in fluid communication with the direct plasma region, and wherein the pumping ring has a fluid passage in fluid communication with the direct plasma region.

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