Sensor device and method for plasma diagnostics

Abstract

The embodiments disclosed herein include sensor devices and methods of using such sensor devices. In one embodiment, the sensor device includes a substrate, a support extending upward from the substrate, and a resonator mechanically coupled to the support. In one embodiment, the sensor device further includes an antenna configured to electromagnetically couple with the resonator, wherein the antenna is connected via a transmission line in the substrate.

Description

Technical Field

[0001] The embodiments of this case relate to the field of semiconductor processing, and more specifically, to a substrate-based resonator array for determining plasma characteristics in a processing chamber. Prior Technology

[0002] Semiconductor manufacturing processes are typically performed in a plasma environment. For example, plasma processing chambers are used to deposit materials on a substrate (e.g., plasma-enhanced chemical vapor deposition (PECVD), plasma-enhanced atomic layer deposition (PEALD), physical vapor deposition (PVD), etc.). Additionally, plasma processing chambers can be used to remove material from the substrate during etching processes. Typically, the metrology used to quantify a given process is limited to the final result of the process. That is, after processing the substrate (e.g., using an etching or deposition process), metrology is used to determine how much material was added (e.g., in a deposition process) or removed (e.g., in an etching process).

[0003] Currently, plasma itself can be monitored using systems such as optical emission spectroscopy (OES). OES can be used to determine certain states of plasma, such as plasma composition. However, OES has a limitation in that it cannot describe plasma properties such as electron density, plasma (electron) temperature, or spatial variations of these properties.

[0004] Some probe architectures can be used to determine plasma characteristics. Microwave probe plasma diagnostics employs a coaxial transmission line design, which results in a relatively large probe volume relative to the discharge caused by probe interference. Therefore, the probe itself may alter the measured characteristics, and thus cannot provide an accurate measure of the processing conditions. Summary of the Invention

[0005] The embodiments disclosed herein include sensor devices and methods of using such sensor devices. In one embodiment, the sensor device includes a substrate, a support extending upward from the substrate, and a resonator mechanically coupled to the support. In one embodiment, the sensor device further includes an antenna configured to electromagnetically couple with the resonator, wherein the antenna is connected via a transmission line in the substrate.

[0006] In one embodiment, a method for measuring plasma using a sensor device includes inserting a sensor substrate having a plurality of resonators into a chamber and reducing the pressure in the chamber. In one embodiment, the method further includes measuring a first resonance profile of the plurality of resonators, initiating a plasma process, and measuring a second resonance profile of the plurality of resonators. In one embodiment, the method further includes determining plasma characteristics by comparing the first resonance profile with the second resonance profile.

[0007] In another embodiment, the sensor device includes a substrate, a plurality of supports extending upward from the substrate, and a plurality of resonators, wherein individual resonators are coupled to individual supports of the plurality of supports. In one embodiment, the sensor device may further include a plurality of antennas, wherein individual antennas of the plurality of antennas are configured to be coupled to individual resonators of the plurality of resonators, and wherein the plurality of antennas are connected to a single transmission line. Simple Explanation of the Diagram

[0008] Figure 1 is a graph of the reflected voltage versus frequency of a resonator in a vacuum and in plasma according to an embodiment.

[0009] Figure 2A is a cross-sectional view of a sensor device according to an embodiment, having a resonator attached to a support and an antenna for driving the resonator to resonate.

[0010] Figure 2B is a plan view illustration of a sensor device according to an embodiment, illustrating a hairpin shape on a helical antenna.

[0011] Figure 2C is a perspective view illustrating a support member for holding a resonator according to an embodiment.

[0012] Figure 2D is a plan view illustration of a helical antenna that can be used to drive resonance in a resonator according to an embodiment.

[0013] Figure 2E is a plan view illustration of a substrate having a plurality of sensor devices radially distributed on the surface of a substrate according to an embodiment.

[0014] Figure 3A is a plan view illustration of a substrate having a plurality of sensor devices distributed in a grid across the surface of a substrate according to an embodiment.

[0015] Figure 3B is a plan view illustrating a plurality of sensor devices with resonators according to an embodiment, wherein the resonators have tips of different lengths.

[0016] Figure 3C is a cross-sectional view illustrating a substrate having a plurality of sensor devices with retainers according to an embodiment, wherein the retainers support the resonator at different heights above the substrate.

[0017] Figure 4 is a cross-sectional view illustrating a sensor device removably attached to a substrate using a connector according to an embodiment.

[0018] Figure 5A is a block diagram of a circuit system for a sensor device on a sensing substrate driven by a wireless configuration, according to an embodiment.

[0019] Figure 5B is a block diagram of a circuit system for a sensor device on a sensing substrate driven using a wired configuration, according to an embodiment.

[0020] Figure 5C is a block diagram of a circuit system for a sensor device on a sensing substrate driven using a wired configuration, according to an additional embodiment.

[0021] Figure 5D is a block diagram of a circuit system for a sensor device on a sensing substrate driven using a wired configuration, according to an additional embodiment.

[0022] Figure 6 is a process flow diagram of a method for measuring plasma parameters in a plasma chamber according to an embodiment.

[0023] Figure 7 illustrates a block diagram of an exemplary computer system according to an embodiment of this case. Implementation

[0024] This document describes a substrate-based resonator array for determining plasma characteristics in a processing chamber. Numerous specific details are set forth in the following description to provide a thorough understanding of embodiments of the invention. It will be apparent to those skilled in the art that embodiments of the invention can be practiced without these specific details. In other instances, well-known forms have not been described in detail to avoid unnecessarily obscuring embodiments of the invention. Furthermore, it should be understood that the various embodiments shown in the accompanying drawings are illustrative and not necessarily drawn to scale.

[0025] The embodiments disclosed herein include diagnostic substrates that enable real-time measurement of plasma parameters during plasma processing. For example, plasma parameters may include, but are not limited to, electron density and electron temperature. Specifically, plasma parameters are measured by detecting changes in the resonant behavior of a resonator located within the plasma (e.g., rising above the substrate surface to at least the Debye length of the plasma).

[0026] In contrast to existing probe techniques, the embodiments disclosed herein involve a smaller amount of interference introduced by the sensing device. Additionally, the transmission line length required for measurement is reduced. This reduced transmission line length allows for measurement of a wider range of conditions. Simultaneous measurement of spatial resolution provides a single-measurement capability absent in conventional probe methods, where the probe must be moved to different parts of the plasma discharge for spatial measurement.

[0027] Referring now to Figure 1, a diagram illustrating the resonant behavior of a sensor device according to one embodiment is shown. In a vacuum (i.e., without plasma generation), the resonant behavior exhibits a narrow peak value. After plasma initiation, the peak value shifts and widens. The peak shift and peak widening compared to the vacuum behavior can be used to calculate plasma characteristics. For example, the peak shift (i.e., the change in resonant frequency) can be correlated with electron density, and the peak widening can be correlated with electron temperature. A peak shift correlated with electron density occurs due to modifications in the local instantaneous permittivity detected by the resonator. The peak widening is correlated with both electron density and electron temperature because plasma can be characterized as a lossy dielectric that reduces the resonator's ability to store electrical energy.

[0028] To detect plasma characteristics, the sensing device needs to be raised above the surface of the underlying substrate. Typically, the height of the resonator needs to be raised at least the Debye height of the plasma. An exemplary architecture of a sensing device that can be integrated onto the substrate is illustrated in Figure 2A.

[0029] Referring now to Figure 2A, a cross-sectional view of a sensor device 200 according to one embodiment is illustrated. In one embodiment, the sensor device 200 may be provided on a substrate 201. The substrate 201 may be any substrate material commonly found in semiconductor manufacturing environments. In certain environments, the substrate 201 may be an organic packaging substrate material, similar to a printed circuit board (PCB) or other board material. In one embodiment, the shape factor of the substrate 201 may be a wafer shape factor. Although it should be understood, other shape factors may also be used. In one embodiment, a ground plane 202 may be provided on the substrate 201.

[0030] In one embodiment, the sensor device 200 may include a support 222. The support 222 extends vertically upward from the surface of the substrate 201. The support 222 also holds the resonator 220. The resonator 220 is electrically isolated from the substrate 201 by the support 222. That is, the support 222 may be an electrically insulating material, such as an organic material. In some embodiments, the support 222 may be made of the same material as the substrate 201. In other embodiments, the support 222 may be a high-temperature plastic (e.g., Teflon) or ceramic material. The support 222 can raise the resonator 220 above the surface of the substrate 201 by a distance D. This distance D may be at least the Debye length of the plasma under study. In a particular embodiment, the distance D may be about 25 mm or less. In some embodiments, the distance D may be between about 1 mm and about 25 mm.

[0031] In one embodiment, the length of the resonator 220 (i.e., the distance between the support 222 and the opposite ends of the resonator 220) can be selected to provide a desired resonant frequency. For example, a sensor with a shorter resonator 220 length is tuned to have a higher resonant frequency than a sensor with a relatively longer resonator 220. In one embodiment, the length of the resonator 220 can be between about 1 mm and about 40 mm. In one embodiment, the resonator 220 can be a conductive material. For example, the resonator 220 can contain copper wire. The wire of the resonator 220 can have a diameter of about 1 mm or less. In a particular embodiment, the wire diameter of the resonator 220 can be about 0.5 mm or less.

[0032] In one embodiment, the sensor device 200 may further include an antenna 223. The antenna 223 may be configured to wirelessly couple with the resonator 220 to drive resonance in the resonator 220. For example, the antenna 223 may be configured to inductively couple with the resonator 220. In one embodiment, the antenna 223 may be embedded within a substrate 201. Embedding the antenna 223 protects it from the processing environment. An opening through the top ground plane 202 provides space between the resonator 220 and the antenna 223 to allow wireless coupling. In one embodiment, a single trace 225 may be coupled to the antenna 223. Additionally, the antenna 223 may be coupled to a ground plane. For example, a trace 226 may connect the antenna 223 to the ground plane 202. In one embodiment, the antenna 223 may be an antenna architecture. In a particular embodiment, the antenna 223 is a helical antenna.

[0033] Referring now to Figure 2B, a plan view illustration of a sensor device 200 according to one embodiment is shown. In one embodiment, the resonator 220 is illustrated as a hairpin resonator 220. That is, the resonator 220 comprises a U-shaped resonator having a pair of tips. In one embodiment, the tips are separated from each other by a width W. The width W may be about 5 mm or less. In a particular embodiment, the width W may be between about 2 mm and about 4 mm. In Figure 2B, the resonator 220 is illustrated as floating. However, it should be understood that a support member can fix the end of the resonator 220 close to the antenna 223.

[0034] As shown in the figure, antenna 223 is a helical antenna. Antenna 223 is provided below resonator 220. In the illustrated embodiment, antenna 223 is shown above substrate 201. However, it should be understood that antenna 223 may also be embedded within substrate 201, similar to the embodiment described in Figure 2A above.

[0035] Referring now to Figure 2C, a perspective view illustrating a support 222 for holding a resonator 220 according to one embodiment is shown. As shown, the support 222 may include a pair of grooves 233. The grooves 233 are configured to hold the tip of the resonator 220. As shown, the grooves 233 are coupled together to form a U-shaped retainer for the resonator. That is, the grooves 233 may be adjusted in size and shape to conform to the shape of the resonator 220. For example, the grooves 233 may be spaced apart from each other by about 5 mm or less. In a particular embodiment, the grooves 233 may be spaced apart from a distance between about 2 mm and about 4 mm. In one embodiment, the support 222 may have a height between about 1 mm and about 25 mm.

[0036] In one embodiment, the support member 222 may be an insulating material. In some embodiments, the support member 222 is made of the same material as the substrate 201. In other embodiments, the support member 222 is a high-temperature plastic, such as Teflon. In yet another embodiment, the support member 222 is a ceramic material. In one embodiment, the resonator 220 is placed in the groove 233, and the resonator 220 is fixed in the groove 233 by an adhesive material. For example, epoxy resin or the like can be used to fix the resonator in the groove 233.

[0037] Referring now to Figure 2D, a planar view illustration of antenna 223 according to one embodiment is shown. As shown, antenna 223 may be a helical antenna. Although four loops are illustrated in helical antenna 223, it should be understood that helical antenna 223 may contain any number of loops. In one embodiment, a first end of helical antenna 223 is coupled to signal trace 225 and a second end of antenna 223 is coupled to trace 226, each of which is coupled to a ground plane. Antenna 223 may be a conductive material, such as copper. Although planar antenna 223 is illustrated, it should be understood that embodiments are not limited to these configurations. For example, non-planar antennas (e.g., coils) may also be used in some embodiments.

[0038] Referring now to Figure 2E, a plan view illustration of a sensor device 200 according to one embodiment is shown. As shown, a plurality of sensors are arranged radially around the periphery of a substrate 201. For example, the substrate 201 may have a wafer shape factor, as shown in Figure 2E. In one embodiment, each of the resonators 220 may have a closed end near the periphery of the substrate 201 and a tip extending toward the center of the substrate 201. In the illustrated embodiment, supports for holding the resonators 220 are omitted for simplicity. However, it should be understood that each resonator 220 is secured by a support (e.g., a support similar to that shown in Figure 2C). An antenna 223 may be inductively coupled to each of the resonators 220. For example, the antenna 223 may be located within the tip toward the closed end of the resonator 220. In the illustrated embodiment, the antenna 223 is illustrated as being on the substrate 201. However, it should be understood that in some embodiments, the antenna 223 may be embedded within the substrate 201. Embedding the antenna 223 within the substrate 201 protects it from the effects of the processing environment. Although no electrical connections are shown in the illustrated embodiment, it should be understood that the antenna 223 may be coupled to signal lines and a ground plane.

[0039] In one embodiment, the resonator 220 may have any suitable shape factor for detecting plasma characteristics. For example, the resonator 220 may have a length L. The length L may be between about 1 mm and about 40 mm. However, it should be understood that in some embodiments, the length L may be less than 1 mm or greater than 40 mm. In one embodiment, the tip of the resonator 220 may have a separation width W. In one embodiment, the width W may be less than about 5 mm. For example, the width W may be between about 2 mm and about 4 mm. However, it should be understood that in some embodiments, the width L may also be greater than 5 mm or less than 2 mm. The geometry of the resonator 220 can be used to set a desired resonant frequency in the resonator 220. The resonant frequency may be higher than the measured plasma frequency. For example, the resonant frequency may be set to about 1 GHz or greater.

[0040] In the illustrated embodiment, resonator 220 is shown as a hairpin resonator. That is, the resonator has a pair of tips coupled together at one end to form a U-shaped resonator 220. However, it should be understood that resonator 220 is not limited to a hairpin resonator 220. That is, resonator 220 can be any suitable RF resonator. The support for holding resonator 220 can be modified to accommodate the structure of resonator 220.

[0041] Referring now to Figure 3A, a plan view illustration of a sensor device 300 according to one embodiment is shown. As shown, a plurality of resonators 320 are provided on the surface of a substrate 301. In the illustrated embodiment, antennas and supports are omitted to avoid confusion. However, it should be understood that each resonator 320 may be coupled to an individual antenna and supported by a support. As shown, the resonators 320 may be provided across the surface of the substrate 301 in a grid pattern. The use of a plurality of resonators 310 allows for spatial mapping of plasma characteristics within a chamber. Specifically, when the sensor device 300 is inserted into a chamber with a known orientation, the sensor device 300 allows for accurate mapping of plasma characteristics within the chamber. The resolution of the plasma mapping can be increased by providing more resonators 320. For example, the number of resonators 320 may be ten or more. In some embodiments, the sensor device 300 may have one hundred or more resonators 320.

[0042] In Figure 3A, each of the resonators 320 has a generally uniform size and shape. However, it should be understood that the embodiments are not limited to these configurations. For example, Figure 3B provides an illustration of a sensor device 300 having resonators 320 with non-uniform shape and size.

[0043] Referring now to Figure 3B, a plurality of resonators 320A to 320N are provided on substrate 301. As shown, resonator 320A has a tip of a first length, and resonator 320N has a tip of a second length, which is less than the first length. Resonators 320 between resonators 320A and 320N may also have tips of non-uniform length. Although all resonators 320 are illustrated as having tips of different lengths, it should be understood that some of the resonators 320 may have tips of the same length. For example, a first group of resonators 320 may have tips of the first length, and a second group of resonators 320 may have tips of the second length.

[0044] The use of multiple resonators 320 of different sizes allows tuning to different frequency ranges. That is, a single sensor device 300 can detect multiple different resonant frequencies. This allows for an increase in the measurable range of plasma parameters. For example, a relatively long tip can be tuned to a lower frequency than a relatively short tip. By including both short and long tips, multiple frequencies can be used to determine plasma characteristics.

[0045] Referring now to Figure 3C, a cross-sectional view of a sensor device 300 according to one embodiment is illustrated. As shown, a plurality of supports 320A to 320N are illustrated. Each of the supports 322 may have a different height H. Variations in height H provide different isolation heights to the resonator 320. Providing different heights H allows plasma characteristics to be detected at different z-axis heights within the discharge. Therefore, in addition to XY-axis spatial information about the plasma, different Z-axis spatial information can also be detected.

[0046] As shown in the figure, support member 322 A has a first height, and support member 322 n has a second height less than the first height. Support members 322 between support members 322 A and 322 n may also have non-uniform heights. Although all support members 322 are illustrated as having different heights, it should be understood that some of the support members 322 may have the same height. For example, a first group of support members 322 may have a first height, and a second group of support members 322 may have a second height. In this embodiment, the height H may be between approximately 1 mm and approximately 25 mm. However, it should be understood that smaller or larger heights H may also be used in other embodiments.

[0047] Referring now to Figure 4, a cross-sectional view of a sensor device 400 according to one embodiment is illustrated. In one embodiment, the sensor device 400 includes a substrate 401. A ground plane 402 may be embedded within the substrate 401. In one embodiment, a support member 422 may be attached to the substrate 401 via a connector 441. The connector 441 may be a removable connector. That is, the support member 422 can be easily attached to and / or detached from the substrate 401. In addition to mechanical coupling, the connector 441 may also provide electrical coupling between the support member 422 and the transmission line 425 in the substrate 401. For example, the connector 441 may include an MMCX connector, etc.

[0048] In one embodiment, an antenna 423 may be provided on the support 422. Unlike the embodiments described herein, the antenna 423 is above the substrate 401. Providing the antenna 423 on the support 422 allows the distance between the resonator 420 and the antenna 423 to be controlled, regardless of the height of the support 422. Thus, a high degree of coupling (inductive coupling) between the antenna 423 and the resonator 420 can be achieved. In one embodiment, the antenna 423 is electrically coupled to the transmission line 425 via conductive traces in the support 422 and via connector 441. Although the transmission line 425 connection is illustrated, it should be understood that a connection from the antenna to the ground plane is also provided via the support 422 and connector 441.

[0049] The use of a removable connector offers several advantages. One advantage is that a damaged resonator 420 can be removed or replaced without discarding the entire sensor device 400. Additionally, the ability to replace the resonator 420 allows resonators of different form factors to be inserted and removed to detect different resonant frequencies. Furthermore, the supports 422 at different heights can be used to measure plasma characteristics at different Z-axis heights in the plasma.

[0050] In one embodiment, the sensing device may include a circuit system for driving and sensing resonance in a resonator. Figures 5A through 5D illustrate examples of block diagrams of the circuit systems for wireless and wired embodiments.

[0051] Referring now to Figure 5A, a circuit system for a wireless sensor device 500 according to one embodiment is illustrated. As shown, a switch block 561 may be coupled to a plurality of resonators (not shown). The switch block 561 may be coupled to a high-pass filter 562, which in turn is coupled to a circulator 563. A synthesizer 564 is coupled to the circulator, and a controller 565 is coupled to the synthesizer 564. The controller 565 may also be coupled to the switch 561. A power supply 566 (e.g., a battery) may be coupled to the controller 565. In one embodiment, a diode 567 is coupled to the circulator 563, and an analog-to-digital converter (ADC) 568 is coupled to the diode 567. A transmitter 569 (e.g., a wireless transceiver) is coupled to the ADC 568.

[0052] Referring now to Figure 5B, a circuit system for a wired sensor device 500 according to one embodiment is illustrated. Similar to the wireless sensor device 500 shown in Figure 5A, the wired sensor device 500 may include a switch 561, a high-pass filter 562, a circulator 563, a synthesizer 564, and a controller 565. Power and communication signals may be provided to the controller 565 via a wired connection. The wired sensor device 500 may also include a diode 567 and an ADC 568.

[0053] Referring now to Figure 5C, a circuit system for a wired sensor device 500 according to an additional embodiment is illustrated. The wired sensor device 500 may have some circuit systems offloaded from the substrate. For example, a controller 565, a synthesizer 564, and an ADC 568 may be offloaded from the wired sensor device 500. Thus, the wired sensor device 500 may include a switch 561, a high-pass filter 562, a circulator 563, and a diode 567.

[0054] Referring now to Figure 5C, a circuit system for a wired sensor device 500 according to yet another embodiment is illustrated. In the wired sensor device 500 of Figure 5D, switches are also omitted from device 500. This embodiment can rely on each of resonators with different resonant frequencies. Therefore, all resonators can be measured simultaneously because they are at different frequencies. Thus, the remaining circuit system on the sensor device 500 may include a high-pass filter 562, a circulator 563, and a diode 567.

[0055] Referring now to Figure 6, a process flow diagram is illustrated for a process 680 for measuring plasma parameters according to one embodiment. In one embodiment, process 680 may begin at operation 681, which includes inserting a sensor substrate having a plurality of resonators into a chamber. The sensor substrate 354 may be substantially similar to any of the sensor devices described in more detail above. For example, the resonators may be hairpin resonators raised above the substrate by means of a support. The hairpin resonators may be driven to resonate by an antenna. In some embodiments, the resonators may be structurally substantially uniform. In other embodiments, the resonators may have different geometries and / or be located at different Z-axis heights above the sensor substrate.

[0056] In some embodiments, the orientation of the sensor substrate within the chamber may also be known. Therefore, precise spatial resolution of the plasma parameters within the chamber can be obtained. This allows for improved monitoring of individual chambers and / or also allows for chamber matching between different chambers.

[0057] In one embodiment, process 680 can operate 682 to continue, which includes reducing the pressure in the chamber. In one embodiment, the pressure can be reduced to below about 10 tors, below about 1 tor, or below about 100 millitors. The pressure can be selected to substantially match the pressure at which the plasma will be triggered.

[0058] In one embodiment, process 680 can continue at operation 683, which includes measuring a first resonance profile of a plurality of resonators. In one embodiment, the first resonance profile can be used as a reference point for comparison with subsequent resonance profiles. Because there is no plasma at operation 682, the first resonance profile can be considered as a vacuum profile.

[0059] In one embodiment, process 680 can continue at operation 684, which includes initiating a plasma process in the chamber. The plasma process may include flowing one or more source gases and triggering plasma from the one or more source gases. In one embodiment, the height of the resonator above the sensor substrate surface may be greater than the Debye height of the plasma formed during operation 684.

[0060] In one embodiment, process 680 may operate 685 to continue, which includes measuring a second resonance profile of a plurality of resonators 685. The second resonance profile will typically differ from the first resonance profile. For example, for individual resonators, the frequency of the resonator will shift and the peak width will increase.

[0061] In one embodiment, process 680 can operate 686 to continue, which includes determining plasma characteristics by comparing a first resonant profile with a second resonant profile. For example, the offset in the frequency of a given resonator between the first and second resonant profiles can be used to determine the electron density. The broadening of the resonant peak can be used to determine the electron temperature.

[0062] When the absolute position of the sensor substrate is known, the resonant profile can be used to provide an accurate mapping of the plasma process within the chamber. Additionally, chamber matching between different chambers can be implemented. In some embodiments, plasma parameter information can be used as input to artificial intelligence (AI) and / or machine learning (MI) algorithms that control the process within the chamber.

[0063] Figure 7 illustrates a machine in an exemplary form of computer system 700, which is executable with a set of instructions for causing the machine to perform any or more of the methods described herein. In alternative embodiments, the machine may be connected to (e.g., network-connected to) a Local Area Network (LAN), an intranet, an inter-enterprise network, or another machine on the Internet. The machine may operate as a server or client machine in a client-server network environment, or as a peer machine in a peer-to-peer (distributed) network environment. The machine may be a personal computer (PC), tablet computer, set-top box (STB), personal digital assistant (PDA), cellular phone, web device, server, network router, switch, or bridge, or any machine capable of executing a set of instructions (sequentially or otherwise) specifying actions to be taken by the machine. Furthermore, although only a single machine is illustrated, the term "machine" should also be used to include any collection of machines (e.g., computers) that individually or collectively execute a set (or more) of instructions to perform any one or more of the methods described herein.

[0064] An exemplary computer system 700 includes a processor 702, main memory 704 (e.g., read-only memory (ROM), flash memory, dynamic random access memory (DRAM) (such as synchronous DRAM (SDRAM) or Rambus DRAM (RDRAM)), static memory 706 (e.g., flash memory, static random access memory (SRAM), MRAM, etc.), and secondary memory 718 (e.g., data storage device), all of which communicate with each other via a bus 730.

[0065] Processor 702 represents one or more general-purpose processing devices, such as microprocessors, central processing units, etc. More specifically, processor 702 may be a complex instruction set computing (CISC) microprocessor, a reduced instruction set computing (RISC) microprocessor, a very long instruction word (VLIW) microprocessor, a processor implementing other instruction sets, or a processor implementing a combination of instruction sets. Processor 702 may also be one or more special-purpose processing devices, such as application-specific integrated circuits (ASICs), field-programmable gate arrays (FPGAs), digital signal processors (DSPs), network processors, etc. Processor 702 is configured to execute processing logic 726 for performing the operations described herein.

[0066] The computer system 700 may further include a network interface device 708. The computer system 700 may also include a video display unit 710 (e.g., a liquid crystal display (LCD), a light emitting diode display (LED), or a cathode ray tube (CRT)), a digit input device 712 (e.g., a keyboard), a cursor control device 714 (e.g., a mouse), and a signal generation device 716 (e.g., a speaker).

[0067] Secondary memory 718 may include machine-accessible storage medium (or more specifically, computer-readable storage medium) 732, on which one or more sets of instructions (e.g., software 722) are stored to implement any one or more of the methods or functions described herein. Software 722 may also reside wholly or at least partially in main memory 704 and / or in processor 702 during execution by computer system 700, both of which also constitute machine-readable storage media. Software 722 may further be transmitted or received on network 720 via network interface device 708.

[0068] Although the machine-accessible storage medium 732 is illustrated as a single medium in the exemplary embodiment, the term "machine-readable storage medium" should be understood to include a single medium or multiple media (e.g., a centralized or distributed database, and / or associated cache and server) that store one or more sets of instructions. The term "machine-readable storage medium" should also be understood to include any medium capable of storing or encoding a set of instructions executable by a machine and causing the machine to perform any of the methods of this invention. The term "machine-readable storage medium" should accordingly be understood to include, but is not limited to, solid-state memory and optical and magnetic media.

[0069] According to an embodiment of this invention, the machine can access a storage medium having instructions stored thereon, which cause the data processing system to execute a method for measuring plasma parameters in a plasma chamber using a diagnostic substrate with a resonator.

[0070] Therefore, a method for measuring plasma parameters has been revealed.

[0071] 200: Sensor device 201:Substrate 202: Grounding plane 220: Resonator 222: Support component 223: Antenna 225: Signal trace 226: Traces 233: Groove 300: Sensor device 301:Substrate 320: Resonator 320 A: Resonator 320 n: Resonator 322 A: Support component 322 n: Support component 400: Sensor device 401:Substrate 402: Grounding plane 420: Resonator 422: Support component 423: Antenna 425: Transmission line 441: Connector 500: Wireless Sensor Device 561: Switch 562: High-pass filter 563: Circulator 564: Synthesizer 565: Controller 566: Power Supply 567: Diode 568: Analog-to-Digital Converter 569: Transmitter 680: Manufacturing Process 681: Operation 682: Operation 683: Operation 684: Operation 685: Operation 686: Operation 700: Computer System 702: Processor 704: Main Memory 706: Static Memory 708: Network Interface Device 710: Video display unit 712: Digital Input Device 714: Vernier control device 716: Signal generating device 718: Sub-memory 722: Software 726: Processing Logic 730: Busbar D: Distance H: Height L: Length W: Width

[0072] Domestic storage information (please note in order of storage institution, date, and number) none Overseas storage information (please note in the order of storage country, institution, date, and number) none

Claims

1. A sensor device for plasma diagnostics, comprising: a substrate; a support extending upward from the substrate; a resonator mechanically coupled to the support; and an antenna configured to electromagnetically couple to the resonator, wherein the antenna is connected to a transmission line in the substrate.

2. The sensor device as claimed in claim 1, wherein the resonator is a hairpin resonator having a pair of tips.

3. The sensor device as claimed in claim 2, wherein a resonant frequency of the resonator is about 1 GHz or greater.

4. The sensor device as claimed in claim 1, wherein a distance between the resonator and the substrate is greater than a Debye length of a plasma.

5. The sensor device as claimed in claim 1, wherein the antenna is embedded in the substrate.

6. The sensor device as claimed in claim 1, wherein the antenna is on the substrate and coupled to the support.

7. The sensor device as claimed in claim 1, wherein the antenna is a helical antenna.

8. The sensor device as claimed in claim 1, wherein the resonator is a radio frequency resonator.

9. The sensor device as claimed in claim 1, wherein the support is removably mounted to the substrate.

10. The sensor device as claimed in claim 1, wherein the sensor device is configured to communicate wirelessly with an external device.

11. A method for measuring a plasma, comprising the steps of: inserting a sensor substrate having a plurality of resonators into a chamber; reducing the pressure in the chamber; measuring a first resonance profile of the plurality of resonators; initiating a plasma process; measuring a second resonance profile of the plurality of resonators; and determining a plasma characteristic by comparing the first resonance profile with the second resonance profile.

12. The method as described in claim 11, wherein the plasma characteristic is an electron density.

13. The method as described in claim 11, wherein the plasma characteristic is an electron temperature.

14. The method as described in claim 11, wherein the plasma process includes a desired pulse frequency, pressure, gas composition, power, and radio frequency.

15. The method as described in claim 11, wherein the plasma characteristic is used for chamber matching between a plurality of chambers.

16. The method as described in claim 11, wherein the plasma characteristics are stored as data points for machine learning or artificial intelligence algorithms.

17. A sensor device for plasma diagnostics, comprising: a substrate; a plurality of supports extending upward from the substrate; a plurality of resonators, wherein individual resonators of the plurality of resonators are coupled to individual supports of the plurality of supports; and a plurality of antennas, wherein individual antennas of the plurality of antennas are configured to be coupled to individual resonators of the plurality of resonators, and wherein the plurality of antennas are connected to a single transmission line.

18. The sensor device as claimed in claim 17, wherein the plurality of supports have non-uniform heights.

19. The sensor device as claimed in claim 17, wherein an individual resonator of the plurality of resonators includes a pair of tips, and wherein the pair of tips has a non-uniform length or a non-uniform width.

20. The sensor device as claimed in claim 17, further comprising: a circuit system for communicatively coupling the single transmission line to an external device via a wireless or wired connection, wherein the circuit system comprises: passive radio frequency circuit elements and / or active radio frequency circuit elements.

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