Treatment methods and plasma treatment devices

Abstract

The present invention relates to a method for plasma treatment of a substrate, comprising the following steps: placing a temperature-adjustable object on a mounting surface of a substrate support portion configured within a decompression-capable processing container; supplying a heat transfer medium, consisting of at least one of a liquid medium or a fluid solid medium, through the substrate support portion to the space between the mounting surface of the substrate support portion and the back surface of the temperature-adjustable object, thereby forming a heat transfer layer; performing plasma treatment on the substrate on the mounting surface on which the heat transfer layer is formed; and, after plasma treatment, removing the temperature-adjustable object from the mounting surface.

Description

Technical Field

[0001] This invention relates to a processing method and a plasma processing apparatus. Prior Technology

[0002] Patent Document 1 discloses a substrate processing apparatus comprising a mounting stage having a mounting surface for mounting a substrate and a gas supply pipe for supplying heat transfer gas to the gap between the substrate and the mounting surface. Previous technical documents Patent documents

[0003] Patent Document 1: Japanese Patent Application Publication No. 2020-120081 Summary of the Invention

[0004] [The problem the invention aims to solve]

[0005] The technology of this invention is to efficiently adjust the temperature of the object during plasma processing. [Technical means to solve the problem]

[0006] One aspect of the present invention is a method for plasma treatment of a substrate, comprising the following steps: placing a temperature-adjustable object on a mounting surface of a substrate support portion configured within a decompression-capable processing container; supplying a heat transfer medium, consisting of at least one of a liquid medium or a fluid solid medium, through the substrate support portion to the space between the mounting surface of the substrate support portion and the back surface of the temperature-adjustable object, thereby forming a heat transfer layer; performing plasma treatment on the substrate on the mounting surface where the heat transfer layer is formed; and after plasma treatment, removing the temperature-adjustable object from the mounting surface. [Effects of the Invention]

[0007] According to the present invention, the temperature of the object can be efficiently adjusted during plasma processing. Simple Explanation of the Diagram

[0008] Figure 1 is a schematic longitudinal sectional view showing the configuration of the processing module of the plasma processing apparatus according to the first embodiment. Figure 2 is a schematic longitudinal sectional view showing the configuration of the processing module of the plasma processing apparatus according to the first embodiment. Figure 3 is a flowchart illustrating an example of wafer processing using the processing modules of Figures 1 and 2. Figure 4 shows the state of the wafer processing of the processing module in Figures 1 and 2. Figure 5 shows the state of the wafer processing of the processing module in Figures 1 and 2. Figure 6 shows the state of the wafer processing of the processing module in Figures 1 and 2. Figure 7 shows the state of the wafer processing of the processing module in Figures 1 and 2. Figure 8 is another example illustrating the supply configuration of the heat transfer medium. Figure 9 shows a specific example of a trench. Figure 10 shows a specific example of a trench. Figure 11 is a schematic top view showing the configuration of a plasma processing system including a processing module as a plasma processing apparatus in the second embodiment. Figure 12 is a schematic longitudinal sectional view showing the configuration of the processing module of the plasma processing apparatus as described in the second embodiment. Figure 13 is a schematic longitudinal sectional view showing the configuration of the processing module of the plasma processing apparatus as described in the second embodiment. Figure 14 is a flowchart illustrating an example of wafer processing using the processing modules of Figures 12 and 13. Figure 15 is a diagram showing the state of the wafer processing of the processing modules in Figures 12 and 13. Figure 16 is a diagram showing the state of the wafer processing of the processing modules in Figures 12 and 13. Figure 17 is a diagram showing the state of the wafer processing of the processing modules in Figures 12 and 13. Implementation

[0009] In the manufacturing process of semiconductor devices, plasma is used to perform plasma treatments such as etching or film deposition on substrates such as semiconductor wafers (hereinafter referred to as "wafers"). The plasma treatment is performed with the substrate placed on a substrate support table in a depressurized processing container.

[0010] Furthermore, in order to obtain good and uniform plasma treatment results in the central and peripheral parts of the substrate, sometimes a ring-shaped component, i.e. an edge ring, is placed on the substrate support platform in a manner that surrounds the substrate on the substrate support platform.

[0011] However, since the result of plasma processing depends on the temperature of the substrate, the temperature of the substrate support stage is adjusted during plasma processing, and the temperature of the substrate is adjusted via the substrate support stage. When using the aforementioned edge ring, the temperature of the edge ring affects the plasma processing results at the periphery of the substrate, therefore, temperature adjustment of the edge ring is also important. The temperature of the edge ring is also adjusted via the substrate support platform. Furthermore, previously, in order to efficiently adjust the temperature of the substrate and edge ring via the substrate support stage, heat transfer gases such as He gas were supplied between the substrate support stage and the substrate and edge ring.

[0012] However, in cases where the heat input from the plasma is large during plasma processing, even if a heat transfer gas is used as described above, it may not be possible to adequately adjust the temperature of at least one of the substrate or edge ring.

[0013] Therefore, the technology of the present invention is to efficiently adjust the temperature of at least one of the substrate or edge ring, i.e., the temperature-adjusting object, during plasma processing.

[0014] The processing method and plasma processing apparatus of this embodiment will now be described with reference to the accompanying drawings. Furthermore, in this specification and drawings, elements having substantially the same functional configuration are labeled with the same symbols, thus omitting redundant descriptions.

[0015] (First Embodiment) <Processing Module> Figures 1 and 2 are schematic longitudinal sectional views showing the configuration of the processing module of the plasma processing apparatus according to the first embodiment. Furthermore, in Figures 1 and 2, different parts of the wafer support stage are shown in cross-section.

[0016] The processing module 1 in Figures 1 and 2 performs plasma processing such as etching or film deposition on the wafer W, which serves as a substrate. The processing module 1 includes a plasma processing chamber 100 as a processing container, gas supply units 120 and 130, an RF (Radio Frequency) power supply unit 140, and an exhaust system 150. Furthermore, the processing module 1 includes a wafer support stage 101 as a substrate support and an upper electrode 102.

[0017] The wafer support stage 101 is disposed in the lower region of the plasma processing space 100s within the plasma processing chamber 100, which is configured to reduce pressure. The upper electrode 102 is disposed above the wafer support stage 101. Furthermore, the upper electrode 102 can function as part of the top (top plate) of the plasma processing chamber 100.

[0018] The wafer support stage 101 is configured to support the wafer W within a plasma processing space of 100 seconds. In one embodiment, the wafer support stage 101 includes a lower electrode 103, an electrostatic chuck 104, an insulator 105, and feet 106, and is equipped with a lifter 107. Furthermore, the wafer support stage 101 includes a temperature adjustment unit configured to adjust the temperature of the electrostatic chuck 104 (e.g., the temperature of its central upper surface 104 1). The temperature adjustment unit includes, for example, a heater, a flow path, or a combination thereof. A temperature-regulating fluid such as a refrigerant or heat transfer gas flows through the flow path.

[0019] The lower electrode 103 is formed of a conductive material such as aluminum and is fixed to the insulator 105. In one embodiment, a flow path 108 for the temperature-regulating fluid, which constitutes part of the temperature adjustment section, is formed inside the lower electrode 103. For example, the temperature-regulating fluid is supplied to the flow path 108 from a cooling unit (not shown) located outside the plasma processing chamber 100. The temperature-regulating fluid supplied to the flow path 108 returns to the cooling unit. For example, by circulating a low-temperature brine, which serves as the temperature-regulating fluid, in the flow path 108, the electrostatic chuck 104, the wafer W mounted on the electrostatic chuck 104, and the edge ring E can be cooled to a specific temperature. Furthermore, for example, by circulating a high-temperature brine, which serves as the temperature-regulating fluid, in the flow path 108, the electrostatic chuck 104, the wafer W mounted on the electrostatic chuck 104, and the edge ring E can be heated to a specific temperature.

[0020] The electrostatic chuck 104 is configured to hold the wafer W by electrostatic force and is disposed on the lower electrode 103. In one embodiment, the upper surface of the central portion of the electrostatic chuck 104 is formed to be higher than the upper surface of the peripheral portion. The upper surface 1041 of the central portion of the electrostatic chuck 104 is a wafer mounting surface for placing the wafer W, and the upper surface 1042 of the peripheral portion of the electrostatic chuck 104 is a ring mounting surface for placing the edge ring E. The edge ring E is a ring-shaped component when viewed from above, which is arranged adjacent to the wafer W placed on the upper surface 1041 of the central portion of the electrostatic chuck 104.

[0021] The electrostatic chuck 104 is an example of a fixing part that fixes the wafer W to the upper surface 1041 of the central part of the electrostatic chuck 104, i.e., the wafer mounting surface. An electrode 109 is provided in the central part of the electrostatic chuck 104.

[0022] A DC voltage from a DC power supply (not shown) is applied to electrode 109. The resulting electrostatic force causes the wafer W to adhere and remain on the upper surface 1041 of the center portion of the electrostatic chuck 104. In one embodiment, the electrostatic chuck 104 is configured to hold the edge ring E by electrostatic attraction, and is provided with electrodes (not shown) for holding the edge ring E on the wafer support stage 101 by electrostatic attraction. In another embodiment, a gas supply hole (not shown) is formed on the upper surface 104 2 of the peripheral portion of the electrostatic chuck 104. This gas supply hole is used to supply a heat transfer gas, such as He gas, to the back side of the edge ring E placed on the upper surface 104 2. Heat transfer gas from a gas supply unit (not shown) is supplied through the gas supply hole. The gas supply unit may include one or more gas sources and one or more pressure controllers. In one embodiment, the gas supply unit is configured, for example, to supply heat transfer gas from the gas source to the aforementioned gas supply hole via the pressure controller.

[0023] Furthermore, the central portion of the electrostatic chuck 104 may be formed to be smaller than the diameter of the wafer W. When the wafer W is placed on the upper surface of the central portion of the electrostatic chuck 104 (hereinafter, the wafer placement surface) 104 1, the peripheral portion of the wafer W protrudes from the central portion of the electrostatic chuck 104. Furthermore, the edge ring E has a step formed on its upper part, and the upper surface of the outer periphery is formed to be higher than the upper surface of the inner periphery. The inner periphery of the edge ring E is formed by drilling into the lower side of the periphery of the wafer W protruding from the center of the electrostatic chuck 104.

[0024] A heater (specifically, a resistance heating element) that forms part of the temperature adjustment mechanism can also be provided inside the electrostatic chuck 104. By energizing the heater, the electrostatic chuck 104 and the wafer W placed on the electrostatic chuck 104 can be heated to a specific temperature. In this case, the electrostatic chuck 104, for example, has a configuration in which the wafer adsorption electrode 109 and the edge ring adsorption electrode are sandwiched between an insulating material made of insulating material, and the heater is embedded therein. Furthermore, the central portion of the electrostatic chuck 104 with wafer adsorption electrodes 109 and the peripheral portion of the electrostatic chuck 104 with edge ring adsorption electrodes can be formed integrally or separately.

[0025] The insulator 105 is a circular plate-shaped component made of ceramic or the like, which fixes the lower electrode 103. The insulator 105 is, for example, formed to have the same diameter as the lower electrode 103.

[0026] The foot 106 is a cylindrical component made of ceramic or the like, which supports the electrostatic chuck 104 across the lower electrode 103 and the insulator 105. The foot 106 is formed, for example, to have an outer diameter that is the same as the outer diameter of the insulator 105, and supports the periphery of the insulator 105.

[0027] The lift 107 is a lifting member that moves up and down relative to the wafer mounting surface 104 1 of the electrostatic chuck 104, and is, for example, formed in a columnar shape. When the lift 107 rises, its upper end protrudes from the wafer mounting surface 104 1, and can support the wafer W. By means of the lift 107, the wafer W can be transferred between the electrostatic chuck 104 and an external transport mechanism (not shown). Furthermore, the lifting devices 107 are provided in three or more intervals, and are arranged in a manner that extends in the vertical direction.

[0028] The lifting devices 107 are respectively connected to the support members 110 that support the lifting devices 107. Furthermore, the support members 110 generate a driving force that causes the support members 110 to rise and fall, and are connected to the drive unit 111 that causes the plurality of lifting devices 107 to rise and fall. The drive unit 111 has, for example, a motor (not shown) as the driving source for generating the aforementioned driving force.

[0029] The lifter 107 is inserted into the through hole 112, which is an opening at the upper end of the wafer mounting surface 104 1 of the electrostatic chuck 104. The through hole 112 is formed, for example, by passing through the central part, the lower electrode 103 and the insulator 105 of the electrostatic chuck 104. The lifter 107, the support member 110, and the drive unit 111 constitute a lifting mechanism for raising and lowering the wafer W relative to the wafer mounting surface 1041.

[0030] In this embodiment, as described below, a heat transfer medium consisting of at least one of a liquid medium or a solid medium with fluidity is supplied to the wafer mounting surface 104 1 via the wafer support stage 101, and a heat transfer layer D is formed from the heat transfer medium.

[0031] Therefore, as shown in Figure 2, a heat transfer medium supply port 113 is formed on the wafer mounting surface 104 1 of the electrostatic chuck 104 of the wafer support stage 101. For example, a plurality of supply ports 113 are provided on the wafer mounting surface 104 1. Trench 114 may also be provided on wafer mounting surface 104 1. The trench 114 is formed by extending the heat transfer medium along the wafer mounting surface 104 1 through the trench 114.

[0032] Furthermore, a flow path 115 is provided inside the wafer support stage 101, one end of which is in fluid communication with each supply port 113. The other end of the flow path 115 is, for example, in fluid connection to the gas supply section 120. Also, the flow path 115 may have a narrower end on the wafer mounting surface 104 1 side (specifically, for example, a portion located within the electrostatic chuck 104), and the aforementioned heat transfer medium within the flow path 115 is supplied to the wafer mounting surface 104 1 via the supply port 113 through capillary action. Furthermore, the flow path 115 is formed, for example, spanning the electrostatic chuck 104, the lower electrode 103, and the insulator 105.

[0033] The gas supply unit 120 may include one or more gas sources 121 and one or more flow controllers 122. In one embodiment, the gas supply unit 120 is configured, for example, to supply one or more types of gases used to generate the aforementioned heat transfer medium (hereinafter, heat transfer medium generating gas) from their respective gas sources 121 to their respective flow controllers 122 to the wafer support stage 101. Each flow controller 122 may include, for example, a mass flow controller or a pressure-controlled flow controller. Furthermore, the gas supply unit 120 may include one or more flow modulation elements for modulating or pulsed the flow rate of one or more types of heat transfer medium generating gas.

[0034] The heat transfer medium generated by the gas supply unit 120 is cooled in the flow path 115, for example, by the lower electrode 103 after being cooled by the temperature-regulating fluid in the flow path 108, thereby liquefying or solidifying into a heat transfer medium composed of at least one of a liquid medium or a fluid solid medium. "Liquid" also includes sols or gels in which liquid is used as a dispersion medium. As described above, the heat transfer medium is supplied to the wafer mounting surface 104 1 via the supply port 113 through a capillary phenomenon, thereby forming the heat transfer layer D. Therefore, the flow path 108 can function as at least part of a cooling mechanism configured to cool the heat transfer medium generated in the flow path 115 into a heat transfer medium using gas, and the gas supply section 120 can function as at least part of a heat transfer layer forming section configured to form the heat transfer layer D on the wafer mounting surface 104 1.

[0035] The aforementioned upper electrode 102 also functions as a cluster injector for supplying various gases from the gas supply unit 130 to the plasma processing space 100s. In one embodiment, the upper electrode 102 has a gas inlet 102a, a gas diffusion chamber 102b, and a plurality of gas inlets 102c. The gas inlet 102a is in fluid communication with, for example, the gas supply unit 130 and the gas diffusion chamber 102b. The plurality of gas inlets 102c are in fluid communication with the gas diffusion chamber 102b and the plasma processing space 100s. In one embodiment, the upper electrode 102 is configured to supply various gases from the gas inlet 102a through the gas diffusion chamber 102b and the plurality of gas inlets 102c to the plasma processing space 100s.

[0036] The gas supply unit 130 may include one or more gas sources 131 and one or more flow controllers 132. In one embodiment, the gas supply unit 130 is configured to supply one or more types of process gases from their respective gas sources 131 to the gas inlet 102a via their respective flow controllers 132. Each flow controller 132 may include, for example, a mass flow controller or a pressure-controlled flow controller. Furthermore, the gas supply unit 130 may include one or more flow modulation elements for modulating or pulsed flow rates of one or more types of process gases.

[0037] The RF power supply unit 140 is configured to supply RF power, such as one or more RF signals, to one or more electrodes, such as the lower electrode 103, the upper electrode 102, or both the lower electrode 103 and the upper electrode 102. This allows plasma to be generated by one or more processing gases supplied to the plasma processing space 100s. Therefore, the RF power supply unit 140 can function as at least part of a plasma generation unit configured to generate plasma from one or more processing gases in the plasma processing chamber 100.

[0038] The RF power supply unit 140 includes, for example, two RF generation units 141a and 141b and two matching circuits 142a and 142b. In one embodiment, the RF power supply unit 140 is configured to supply a first RF signal from the first RF generation unit 141a to the lower electrode 103 via the first matching circuit 142a. For example, the first RF signal may have a frequency in the range of 27 MHz to 100 MHz.

[0039] In another embodiment, the RF power supply unit 140 is configured to supply a second RF signal from the second RF generation unit 141b to the lower electrode 103 via a second matching circuit 142b. For example, the second RF signal may have a frequency in the range of 400 kHz to 13.56 MHz. Alternatively, a voltage pulse other than an RF signal may be supplied instead of the second RF signal. The voltage pulse may be a negative DC voltage. In other examples, the voltage pulse may also be a triangular wave or a pulse.

[0040] Furthermore, although the illustrations are omitted, other embodiments are considered in this invention. For example, in an alternative embodiment, it may be configured such that the RF power supply unit 140 supplies a first RF signal to the lower electrode 103 from the RF generation unit, supplies a second RF signal to the lower electrode 103 from another RF generation unit, and supplies a third RF signal to the lower electrode 103 from yet another RF generation unit. Moreover, in another alternative embodiment, a DC voltage may be applied to the upper electrode 102.

[0041] Furthermore, in various embodiments, the amplitude of one or more RF signals (i.e., the first RF signal, the second RF signal, etc.) can be pulsed or modulated. Amplitude modulation may also include pulsed RF signal amplitude between an on state and an off state, or between two or more different on states.

[0042] The exhaust system 150 may be connected, for example, to an exhaust port 100e located at the bottom of the plasma processing chamber 100. The exhaust system 150 may include a pressure valve and a vacuum pump. The vacuum pump may include a turbomolecular pump, a roughing pump, or a combination thereof.

[0043] Furthermore, the processing module 1 includes a control unit 160. In one embodiment, the control unit 160 processes computer-executable commands to cause the processing module 1 to perform the various steps described herein. The control unit 160 may be configured to control other elements of the processing module 1 in a manner that executes the various steps described herein. In one embodiment, part or all of the control unit 160 may also be included in other elements of the processing module 1. The control unit 160 may, for example, include a computer 170. The computer 170 may, for example, include a processing unit (CPU: Central Processing Unit) 171, a memory unit 172, and a communication interface 173. The processing unit 171 may be configured to perform various control actions based on programs stored in the memory unit 172. The memory unit 172 may include RAM (Random Access Memory), ROM (Read Only Memory), HDD (Hard Disk Drive), SSD (Solid State Drive), or a combination thereof. The communication interface 173 can communicate with other elements of the processing module 1 via communication lines such as LAN (Local Area Network).

[0044] <Processing Module 1: Wafer Processing> Next, an example of wafer processing using processing module 1 will be described using Figures 3 to 7. Figure 3 is a flowchart illustrating an example of the above-described wafer processing. Figures 4 to 7 are diagrams showing the state of processing module 1 in the above-described wafer processing. Furthermore, the following processing is performed under the control of control unit 160.

[0045] For example, first, as shown in Figures 3 and 4, the wafer W is placed on the wafer mounting surface 104 1 of the wafer support stage 101 (step S1). Specifically, a conveying mechanism (not shown) is used to move the wafer W into the plasma processing chamber 100, and the lifting device 107 is used to lift and place the wafer W on the wafer mounting surface 104 1 of the electrostatic chuck 104. Subsequently, the exhaust system 150 is used to depressurize the interior of the plasma processing chamber 100 to a specific vacuum level (pressure p1).

[0046] Subsequently, as shown in Figure 5, a heat transfer medium consisting of at least one of a liquid medium or a fluid solid medium is supplied through the wafer support stage 101 to the space between the wafer mounting surface 104 1 and the back side of the wafer W to form a heat transfer layer D (step S2).

[0047] Specifically, the wafer W is held on the wafer support stage 101. For example, a DC voltage is applied to the electrodes 109 of the electrostatic chuck 104, and the wafer W is electrostatically attracted to the electrostatic chuck 104 by electrostatic force. At this time, the temperature of the wafer mounting surface 104 1 is adjusted to temperature T1, and therefore, the flow path 115 is also adjusted to temperature T1. Furthermore, temperature T1 is set to a temperature that can effectively carry out program processing, for example, equal to the temperature of the wafer mounting surface 104 1 during program processing.

[0048] After holding the wafer W on the wafer support stage 101, a heat transfer medium generating gas is supplied from the gas supply section 120 into the flow path 115 of the wafer support stage 101 at a temperature T2 (>T1) and a pressure p2 (>p1). The heat transfer medium generating gas supplied to the flow path 115 is cooled to a temperature T1 within the flow path 115, becoming a heat transfer medium composed of at least one of a liquid medium or a fluid solid medium. Then, this heat transfer medium is supplied to the wafer mounting surface 104 1 through the supply port 113, for example, by capillary action. The heat transfer medium supplied to the wafer mounting surface 104 1 expands along the wafer mounting surface 104 1 by capillary action generated due to the gap between the wafer mounting surface 104 1 and the back surface of the wafer W, forming a heat transfer layer D. The heat transfer layer D is formed from a heat transfer medium consisting of at least one of a liquid medium or a solid medium with fluidity, and is therefore free to deform.

[0049] Furthermore, if the gap between the wafer mounting surface 104 1 and the back surface of the wafer W is too narrow, the heat transfer medium may not be able to expand along the wafer mounting surface 104 1 due to factors such as the viscosity of the heat transfer medium. Therefore, as described above, by providing the groove 114 on the wafer mounting surface 104 1, the gap between the wafer mounting surface 104 1 and the back surface of the wafer W can be widened, thus allowing the heat transfer medium to expand appropriately along the wafer mounting surface 104 1 through capillary action. Furthermore, in order to facilitate the transfer of the heat transfer medium through capillary action, a medium with lower viscosity can also be used as the aforementioned heat transfer medium.

[0050] Regarding the supply of heat transfer medium to the wafer mounting surface 104 1 (specifically, the supply of heat transfer medium generating gas from the gas supply section 120), for example, it stops when the supply amount reaches a certain amount (specifically, when the time for supplying heat transfer medium generating gas from the gas supply section 120 exceeds a certain time). Furthermore, for example, a monitoring device such as a camera can be used to monitor whether heat transfer medium leaks between the wafer mounting surface 104 1 and the back surface of the wafer W. When leakage is detected, the supply of heat transfer medium to the wafer mounting surface 104 1 is stopped. In this case, the monitoring device such as the camera is, for example, disposed outside the plasma processing chamber 100, and monitoring, i.e., recording, is performed through an optical window provided in the plasma processing chamber 100.

[0051] Then, plasma treatment is performed on the wafer W on the wafer mounting surface 104 1 where the heat transfer layer D is formed (step S3). Specifically, plasma treatment is performed on the wafer W where the heat transfer layer D is formed between the wafer mounting surface 104 1 and the wafer.

[0052] More specifically, for example, while the wafer W is continuously held on the wafer support stage 101, as shown in FIG6, processing gas is supplied from the gas supply unit 130 to the plasma processing space 100s via the upper electrode 102, and at the same time, high-frequency power HF for plasma generation is supplied from the RF power supply unit 140 to the lower electrode 103. This excites the processing gas to generate plasma P. At this time, high-frequency power LF for ion feeding can also be supplied from the RF power supply unit 140. Then, plasma processing is performed on the wafer W by the action of the generated plasma P.

[0053] In plasma processing, for temperature control of wafer W, the wafer mounting surface 104 1 is adjusted to a specific temperature T1 by a temperature-regulating fluid flowing in the flow path 108. Furthermore, in plasma processing, wafer W is mounted on wafer mounting surface 104 1 with a heat transfer layer D in between, and the heat transfer layer D is freely deformable as described above, so the lower surface, i.e., the back surface, of wafer W is in close contact with the heat transfer layer D. Moreover, the heat transfer layer D is formed of a heat transfer medium, which is composed of at least one of a liquid medium or a fluid solid medium, and therefore has higher thermal conductivity than heat transfer gases such as He. Therefore, when using the heat transfer layer D, compared to the case where heat transfer gases such as He are circulated between wafer mounting surface 104 1 and the back surface of wafer W as previously described, the temperature of wafer W can be adjusted more efficiently via wafer mounting surface 104 1. Specifically, even if the amount of heat input from plasma P to wafer W is large during plasma processing, the temperature of wafer W can be maintained at a fixed temperature by adjusting the temperature of wafer mounting surface 104 1. Furthermore, when there is a change in the set temperature of wafer W during plasma processing, the temperature of wafer W can be immediately changed to the changed set temperature by adjusting the temperature of wafer mounting surface 104 1. In plasma processing, when the wafer W is held on the wafer support stage 101 by electrostatic force, the degree of contact between the wafer W and the wafer support stage 101 can also be controlled by electrostatic force, thereby controlling the cooling of the wafer W using the wafer support stage 101.

[0054] Furthermore, in plasma processing, the pressure p3 applied to the heat transfer layer D also includes the pressure applied to the heat transfer layer D due to electrostatic adsorption of the wafer W, which is 0.1 Torr to 100 Torr. Furthermore, in plasma processing, a DC voltage can be applied to the electrode for adsorption of the edge ring of the electrostatic chuck 104 to electrostatically adsorb the edge ring E onto the electrostatic chuck 104. Moreover, in plasma processing, heat transfer gas can be supplied from the gas supply hole (not shown) formed on the upper surface 104 2 of the peripheral portion of the electrostatic chuck 104 toward the back side of the edge ring E.

[0055] When the plasma treatment ends, the supply of high-frequency power HF from the RF power supply unit 140 is stopped, and the supply of processing gas from the gas supply unit 130 is also stopped. When high-frequency power LF is supplied during plasma treatment, the supply of that high-frequency power LF is also stopped. Furthermore, the interior of the plasma treatment chamber 100 is depressurized to a specific vacuum level (pressure p1) by the exhaust system 150. The pressure p1 is, for example, less than 0.001 Torr. Moreover, when the edge ring E is held in place by the electrostatic chuck 104 during plasma treatment, and heat transfer gas is supplied to the back of the edge ring E, at least one of these measures can also be stopped.

[0056] After plasma treatment, the wafer W is removed from the wafer mounting surface 104 1, and the heat transfer layer D is vaporized and removed (step S4). In one example, the heat transfer layer D is removed by vaporizing it. Specifically, after the wafer W stops being held on the wafer support stage 101 (e.g., by using an electrostatic chuck 104 to hold the wafer W), the wafer W is lifted by the lifter 107, leaving the wafer mounting surface 104 1 as shown in FIG. 7. After the wafer W leaves, the heat transfer layer D is exposed to a reduced pressure atmosphere, specifically, to an atmosphere with a pressure p1 below 0.001 Torr, whereby it is vaporized and removed.

[0057] To achieve this vaporization, the heat transfer medium used to form the heat transfer layer D is either a liquid or a fluid solid at a pressure p3 of 0.1 to 100 Torr and a temperature T1, or a gaseous medium at a pressure p1 of less than 0.001 Torr and a temperature T1.

[0058] Furthermore, the gas used to generate the heat transfer medium that forms the heat transfer layer D may contain, for example, at least one of the constituent atoms of the heat transfer layer D, B (boron) or C (carbon), and at least one of the constituent gas components, H (hydrogen), N (nitrogen), or O (oxygen). Moreover, the gas used to generate the heat transfer medium preferably contains components that do not interfere with plasma processing. Furthermore, in order to remove the heat transfer layer D from the wafer mounting surface 104E 1, the heat transfer layer D may be exposed to a reduced pressure atmosphere or at least one of the following can be used simultaneously: exposure of the heat transfer layer D to plasma, heating of the heat transfer layer D, or irradiation of the heat transfer layer D with light.

[0059] Then, the wafer W is removed (step S5). Specifically, the wafer W is delivered from the elevator 107 to a transport mechanism (not shown), and then removed from the plasma processing chamber 100 by the transport mechanism. This completes the series of wafer processing steps.

[0060] <Effects, etc.> As described above, in this embodiment, during plasma processing, a heat transfer medium composed of at least one of a liquid medium or a fluid solid medium is supplied via the wafer support stage 101 between the wafer mounting surface 104 1 and the back surface of the wafer W to form a heat transfer layer D. This heat transfer layer D is formed from the heat transfer medium described above, and therefore has a higher thermal conductivity than a heat transfer gas, i.e., a heat transfer layer containing gas. Furthermore, the heat transfer layer D is freely deformable as described above, and therefore can be in close contact with the lower surface of the wafer W. Therefore, according to this embodiment, heat exchange can be efficiently performed between the wafer W and the wafer mounting surface 104 1 via the heat transfer layer D. Therefore, during plasma processing, the temperature of the wafer W can be efficiently adjusted via the wafer mounting surface 104 1. Specifically, during plasma processing, heat can be efficiently absorbed from the wafer W through the heat transfer layer D via the wafer mounting surface 104 1, and the wafer W can be efficiently heated through the heat transfer layer D via the wafer mounting surface 104 1.

[0061] Furthermore, according to this embodiment, the heat transfer medium forming the heat transfer layer D is composed of a liquid or a fluid solid, thus preventing the heat transfer medium from blocking the flow path 115. Furthermore, when the wafer W is removed from the wafer mounting surface 104 1, the heat transfer layer D vaporizes and is removed, thus eliminating the need for a separate step to remove the heat transfer layer D. Therefore, it is possible to increase production capacity.

[0062] Furthermore, in this embodiment, during plasma processing, the wafer W is held on the wafer mounting surface 104 1 by the electrostatic force of the electrostatic chuck 104. This allows for closer contact between the heat transfer layer D and the lower surface of the wafer W, thereby further improving the cooling efficiency or heating efficiency of the wafer W via the wafer mounting surface 104 1 and the heat transfer layer D. Furthermore, by utilizing the electrostatic chuck 104 for holding as described above, even if the wafer W warps, the heat transfer layer D can still maintain close contact with the lower surface of the wafer W. Therefore, even when the wafer W warps, cooling or heating of the wafer W can be performed efficiently.

[0063] <Examples of variations in the supply method of heat transfer medium> Figure 8 is another example illustrating the supply configuration of the heat transfer medium. In the above example, a heat transfer medium generating gas is supplied from the outside to the wafer support stage 101 and becomes a heat transfer medium inside the wafer support stage 101. However, as shown in FIG8, a medium supply unit 180 may also be provided to supply the heat transfer medium itself to the wafer support stage 101 (specifically, flow path 115).

[0064] The medium supply unit 180 may include a source 181 of one or more heat transfer media and one or more flow controllers 182. In one embodiment, the medium supply unit 180 is configured, for example, to supply one or more heat transfer media from their respective sources 181 to the wafer support stage 101 via their respective flow controllers 182. Furthermore, the medium supply unit 180 may include one or more flow modulation elements for modulating or pulsed flow rates of one or more heat transfer media.

[0065] Furthermore, in the above example, the heat transfer medium within the wafer support stage 101 is supplied to the wafer mounting surface 104 1 via capillary action. Alternatively, the heat transfer medium within the wafer support stage 101 can be supplied to the wafer mounting surface 104 1 by supplying the pressure of a heat transfer medium generating gas to the wafer support stage 101 from the outside, or by supplying the pressure of the heat transfer medium to the wafer support stage 101 from the outside.

[0066] <Example of Changes in Heat Transfer Medium> As described above, when the heat transfer medium within the wafer support 101 is supplied to the wafer mounting surface 104 1 by supplying pressure to the wafer support 101 from the outside, the following can also be used as the heat transfer medium: That is, a heat transfer medium mixed with a powder having a higher thermal conductivity than the base material of the heat transfer medium can also be used. Specifically, the powder having a higher thermal conductivity than the base material of the heat transfer medium is, for example, carbon nanotube powder.

[0067] Furthermore, when supplying the heat transfer medium within the wafer support stage 101 to the wafer mounting surface 104 1 by pressurizing the heat transfer medium generating gas supplied from the outside to the wafer support stage 101, a mist containing the aforementioned highly thermally conductive powder can also be used as the heat transfer medium generating gas. By cooling the heat transfer medium generating gas within the flow path 115, it can be transformed into a heat transfer medium mixed with highly thermally conductive powder, and this heat transfer medium can be supplied to the wafer mounting surface 104 1.

[0068] <Specific Example of Groove 114> Figures 9 and 10 show specific examples of trench 114. As shown in Figure 9, a plurality of support pillars 116 are sometimes formed on the wafer mounting surface 1041 of the electrostatic chuck 104 to support the back side of the wafer W. In this case, for example, the recesses formed between the support pillars 116 constitute a groove 114. Furthermore, as shown in Figure 10, a porous body (specifically, a porous ceramic) 117 can be disposed within the trench 114 to fill the trench 114. In this way, regardless of the shape of the trench 114, the shape of the wafer W during electrostatic adsorption by the electrostatic chuck 104 can be maintained. Moreover, when using the porous body 117, the heat transfer medium moves within the pores of the porous body through capillary action, thus allowing it to expand along the wafer mounting surface 104 1.

[0069] <Another example of a wafer mounting surface> In this embodiment, the wafer mounting surface can be formed by a porous body, except for the trench 114 (specifically, for example, the top of the support pillar 116). Furthermore, if the trench 114 is not provided on the wafer mounting surface, the entire wafer mounting surface can be formed by a porous body.

[0070] <Another example of the formation morphology of heat transfer layer D> In this embodiment, the heat transfer layer D is formed, for example, on the entire wafer mounting surface 104 1, including the central and peripheral regions of the wafer mounting surface 104 1. However, the heat transfer layer D may also be formed only on a portion of the wafer mounting surface 104 1. For example, when it is necessary to absorb or heat the central portion of the wafer W to a greater extent, the heat transfer layer D may be formed only in the central region of the wafer mounting surface 104 1 facing the central portion of the wafer W. Similarly, when it is necessary to absorb or heat the peripheral portion of the wafer W to a greater extent, the heat transfer layer D may be formed only in the peripheral region of the wafer mounting surface 104 1 facing the peripheral portion of the wafer W. For example, by forming trenches 114 only in a portion of the wafer mounting surface 104 1, such as the central region, a heat transfer layer D can be formed only in that portion of the region.

[0071] Furthermore, in this embodiment, the heat transfer layer D has a uniform thickness throughout the entire wafer mounting surface 104 1, including the central and peripheral regions, but it may also have an uneven thickness within the wafer mounting surface 104 1. For example, when it is necessary to absorb or heat the central portion of the wafer W to a greater extent, the heat transfer layer D in the central region of the wafer mounting surface 104 1 facing the central portion of the wafer W may be thinner than the heat transfer layer D in the peripheral region. Similarly, when it is necessary to absorb or heat the peripheral portion of the wafer W to a greater extent, the heat transfer layer D in the peripheral region of the wafer mounting surface 104 1 facing the peripheral portion of the wafer W may be thinner than the heat transfer layer D in the central region. In this way, by making the heat transfer layer D thinner only in a portion of the wafer mounting surface 104 1, such as the central region, the heat exchange efficiency between the wafer mounting surface 104 1 and the wafer W is made uneven in the plane, and the heat exchange efficiency of the aforementioned portion of the area can be improved. Furthermore, when trenches 114 are formed on wafer mounting surface 104 1, by making the depth of trenches 114 different in different regions of wafer mounting surface 104 1, the heat transfer layer D in only a part of the region, such as the central region, can be made thinner.

[0072] Furthermore, when the wafer mounting surface 104 1 is formed entirely of porous material instead of trench 114, by making the thickness of the porous material different in different regions of the wafer mounting surface 104 1, the heat exchange efficiency between the wafer mounting surface 104 1 and the wafer W can be made uneven in the surface, just as when the depth of the trench 114 is made different in different regions of the wafer mounting surface 104 1.

[0073] Furthermore, the heat transfer layer D can be formed by mixing a high thermal conductivity medium and a low thermal conductivity medium, and the mixing ratio of the high thermal conductivity medium and the low thermal conductivity medium can be different in different regions of the wafer mounting surface 104 1. In this way, the heat exchange efficiency between the wafer mounting surface 104 1 and the wafer W can also be made uneven in the plane.

[0074] Furthermore, the density of the trench 114 can be made different in different regions of the wafer mounting surface 104 1. In the case where the trench 114 is formed by recesses formed between the support pillars 116, the density of the support pillars 116 can be made different in different regions of the wafer mounting surface 104 1. In this way, the ratio of the portion with the heat transfer layer formed can be different in different regions of the wafer mounting surface 104 1, thereby making the heat exchange efficiency between the wafer mounting surface 104 1 and the wafer W uneven in the plane.

[0075] <Regarding the electrical properties of heat transfer layer D> The heat transfer layer D can be electrically insulating. This generates a residual charge in the heat transfer layer D, which can then be used for electrostatic adsorption of the wafer W. Furthermore, the heat transfer layer D can also be conductive. In this way, residual charges generated in the wafer W can be removed through the heat transfer layer D. Furthermore, the heat transfer layer D can also be constructed by covering a conductive portion with an electrically insulating portion. In this way, high thermal conductivity can be ensured with the conductive portion (generally speaking, the higher the conductivity, the higher the thermal conductivity), and the wafer W can be electrostatically attracted by the residual charge generated in the electrically insulating portion.

[0076] <Other variations of the first embodiment> Regarding the wafer mounting surface 104 1 of the wafer support stage 101, the height of the central region and the peripheral region can be fixed, that is, it can be flat macroscopically, and the central region can be higher, and the peripheral region can be higher.

[0077] When the wafer mounting surface 104 1 is formed into a convex shape with a higher central region, when a wafer W with a temperature higher than the wafer mounting surface 104 1 is placed on the wafer mounting surface 104 1, and the wafer W cools from the back side and undergoes thermal deformation to become convex, the wafer W can be made to be in close contact with the wafer mounting surface 104 1. Furthermore, when the wafer mounting surface 104 1 is formed into a concave shape with a lower central region, when a wafer W with a lower temperature than the wafer mounting surface 104 1 is placed on the wafer mounting surface 104 1, and the wafer W is heated from the back side and undergoes thermal deformation to become concave, the wafer W can be made to be in close contact with the wafer mounting surface 104 1.

[0078] As described above, the heat transfer layer D can be formed on the entire wafer mounting surface 104 1, or it can be formed only on a portion of the wafer mounting surface 104 1 (specifically, either the central region or the peripheral region). For the regions on the wafer mounting surface 104 1 where the heat transfer layer D is not formed, a heat transfer gas such as He gas can be supplied.

[0079] In the above example, as a fixing part that holds and fixes the wafer W on the wafer mounting surface 104 1, an electrostatic chuck 104 is used to hold it by electrostatic force, which is generated by applying a DC voltage to the internal electrode 109. As an electrical holding part that holds the wafer W in place, it is not limited to holding it by electrostatic force, but can also be held by Johnson-Rahbek force. The aforementioned fixing part is not limited to electrically retaining components as described above. For example, the aforementioned fixing part can also be a physical fixing component such as a clamp. A clamp is defined as a component that fixes the wafer W by clamping it between the clamp and the wafer support stage 101. Furthermore, the aforementioned fixing parts can also be omitted.

[0080] (Second Implementation) <Plasma Treatment System> Figure 11 is a schematic top view showing the configuration of a plasma processing system including a processing module of the plasma processing apparatus as described in the second embodiment.

[0081] The plasma processing system PS in Figure 11 includes an atmospheric section 10 and a depressurization section 11, which are integrally connected via mounting lock-up modules 20 and 21. The atmospheric section 10 includes an atmospheric module for performing the required processing on the wafer W, which serves as a substrate, under atmospheric pressure. The depressurization section 11 includes a processing module 1A for performing the required processing on the wafer W under a depressurized atmosphere (vacuum atmosphere).

[0082] Loading lock-up modules 20 and 21 are configured to connect the loading module 30 included in the atmospheric section 10 and the transfer module 50 included in the depressurization section 11 via a gate valve (not shown). Loading lock-up modules 20 and 21 are configured to temporarily hold the wafer W. Furthermore, loading lock-up modules 20 and 21 are configured to switch the internal atmosphere between atmospheric pressure and depressurized atmosphere.

[0083] The atmospheric section 10 includes: a loading module 30, which has a conveying mechanism 40; and a load port 32 for holding a wafer pod (FOUP: Front Opening Unified Pod) 31. The wafer pod 31 is capable of holding multiple wafers W. Furthermore, a locator module (not shown) for adjusting the horizontal orientation of the wafers W and a buffer module (not shown) for temporarily storing multiple wafers W can be connected to the loading module 30.

[0084] The loading module 30 has a rectangular housing, and the interior of the housing is maintained at atmospheric pressure. On one side of the long side of the housing constituting the loading module 30, a plurality of, for example, five, load ports 32 are arranged side by side. On the other side of the long side of the housing constituting the loading module 30, loading locking modules 20 and 21 are arranged side by side.

[0085] Inside the housing of the loading module 30, a transport mechanism 40 configured to transport wafer W is provided. The transport mechanism 40 includes: a transport arm 41 that supports the wafer W during transport; a rotary table 42 that rotatably supports the transport arm 41; and a base 43 on which the rotary table 42 is mounted. Furthermore, a guide rail 44 extending along the long side of the loading module 30 is provided inside the loading module 30. The base 43 is mounted on the guide rail 44, and the transport mechanism 40 is configured to move along the guide rail 44.

[0086] The decompression unit 11 includes: a transfer module 50 that transports the wafer W and the edge ring E; a processing module 1A, which serves as a plasma processing apparatus, and performs plasma processing on the wafer W transported from the transfer module 50; and a storage module 60, which serves as a storage unit and stores the edge ring E. The interiors of the transfer module 50 and the processing module 1A (specifically, the interiors of the decompression transfer chamber 51 and the plasma processing chamber 100 described below) are maintained at a decompression atmosphere, and the interior of the storage module 60 is also maintained at a decompression atmosphere. A plurality of processing modules 1A, for example, six, are provided relative to one transfer module 50, and a plurality of storage modules 60, for example, two, are also provided.

[0087] The transfer module 50 includes a depressurization transfer chamber 51 with a polygonal (pentagonal in the example shown) housing, which is connected to the loading lock-up modules 20 and 21. The transfer module 50 transfers wafers W, which are loaded into the loading lock-up module 20, to a processing module 1A, and after performing the required plasma processing in the processing module 1A, the wafers W are transferred out to the atmosphere 10 via the loading lock-up module 21. Furthermore, the transfer module 50 transfers edge rings E within the receiving module 60 to a processing module 1A, and transfers edge rings E of exchange objects within the processing module 1A to the receiving module 60.

[0088] Processing module 1A is connected to transfer module 50 via gate valve 61. Furthermore, the differences between this processing module 1A and the processing module 1 described using FIG1, etc., are as follows.

[0089] The storage module 60 is connected to the transfer module 50 via a gate valve 62.

[0090] Inside the decompression transfer chamber 51 of the transfer module 50, a transfer mechanism 70 configured to transfer wafer W and edge ring E is provided. Similar to the transfer mechanism 40 described above, the transfer mechanism 70 includes: a transfer arm 71 that supports the wafer W and edge ring E during transfer; a rotary table 72 that rotatably supports the transfer arm 71; and a base 73 on which the rotary table 72 is mounted. Furthermore, inside the decompression transfer chamber 51 of the transfer module 50, a guide rail 74 extending along the long side of the transfer module 50 is provided. The base 73 is mounted on the guide rail 74, and the transfer mechanism 70 is configured to move along the guide rail 74.

[0091] In the transfer module 50, the transfer arm 71 receives the wafer W held in the loading latch module 20 and moves it into the processing module 1A. Also, the transfer arm 71 receives the wafer W held in the processing module 1A and moves it out to the loading latch module 21. Furthermore, in the transfer module 50, the conveying arm 71 receives the edge ring E within the storage module 60 and moves it into the processing module 1A. Also, the conveying arm 71 receives the edge ring E held within the processing module 1A and moves it out into the storage module 60.

[0092] Furthermore, the plasma processing system PS has a control unit 80. In one embodiment, the control unit 80 processes computer-executable commands to cause the plasma processing system PS to perform the various steps described herein. The control unit 80 may be configured to control other elements of the plasma processing system PS to perform the various steps described herein. In one embodiment, part or all of the control unit 80 may also be included in other elements of the plasma processing system PS. In another embodiment, the control unit 80 processes computer-executable commands to cause the processing module 1A to perform the various steps described herein. The control unit 80 may be configured to control other elements of the processing module 1A to perform the various steps described herein. In one embodiment, part or all of the control unit 80 may also be included in other elements of the processing module 1A. The control unit 80 may, for example, include a computer 90. The computer 90 may, for example, include a processing unit (CPU) 91, a memory unit 92, and a communication interface 93. The processing unit 91 may be configured to perform various control actions based on programs stored in the memory unit 92. The memory unit 92 may include RAM, ROM, HDD, SSD, or a combination thereof. The communication interface 93 can communicate with other elements of the plasma processing system PS via communication lines such as LAN.

[0093] <Plasma Processing System: Wafer Processing> Next, the wafer processing using the plasma processing system PS configured as described above will be explained.

[0094] First, the wafer W is removed from the desired wafer transfer cassette 31 by the conveying mechanism 40 and placed into the loading latch module 20. Then, the loading latch module 20 is sealed and depressurized. Afterward, the interior of the loading latch module 20 is connected to the interior of the transfer module 50.

[0095] Secondly, the wafer W is held by the conveying mechanism 70 and transferred from the loading locking module 20 to the transfer module 50.

[0096] Next, the gate valve 61 is opened, and the wafer W is moved into the required processing module 1A by the conveying mechanism 70. Then, the gate valve 61 is closed, and the wafer W is processed as required in the processing module 1A. Furthermore, the processing of the wafer W in the processing module 1A will be described below.

[0097] Next, the gate valve 61 is opened, and the wafer W is moved out of the processing module 1A by the conveying mechanism 70. Then, the gate valve 61 is closed.

[0098] Next, the wafer W is moved into the loading latch module 21 by the conveying mechanism 70. After the wafer W is moved into the loading latch module 21, the loading latch module 21 is sealed and opened to the atmosphere. Subsequently, the interior of the loading latch module 21 is connected to the interior of the loading module 30.

[0099] Next, the wafer W is held by the conveyor mechanism 40 and returned from the loading lock module 21 to the required wafer transport box 31 via the loading module 30 for storage. At this point, a series of wafer processing steps in the plasma processing system PS is completed.

[0100] <Processing Module 1A> Figures 12 and 13 are schematic longitudinal sectional views showing the configuration of the processing module 1A. Furthermore, in Figures 12 and 13, different parts of the wafer support stage 101A are shown in cross-section.

[0101] In processing module 1 of Figures 1 and 2, the object whose temperature is adjusted via the wafer support stage 101 and the heat transfer layer D formed by the heat transfer medium is the wafer W. In contrast, in processing module 1A of Figures 12 and 13, not only the wafer W but also the edge ring E is the object whose temperature is adjusted. Therefore, the main difference between processing module 1A of Figures 12 and 13 and processing module 1 of Figures 1 and 2 lies in the configuration of the wafer support stage. This difference will be explained below.

[0102] The wafer support stage 101A of the processing module 1A includes, for example, a lower electrode 200, an electrostatic chuck 201, an insulator 202 and a foot 106, and is provided with a lifter 107 and a lifter 203.

[0103] The electrostatic chuck 201 is similar to the electrostatic chuck 104 in Figure 1, with a wafer mounting surface 104 1 in the central part and an upper surface 201 1 on the periphery as a ring mounting surface for mounting the edge ring E.

[0104] The electrostatic chuck 201 is an example of a fixing part that fixes the edge ring E to the upper surface 2011 of the peripheral portion of the electrostatic chuck 201, i.e., the ring mounting surface. Regarding the electrostatic chuck 201, an electrode 109 for holding the wafer W by electrostatic adsorption is provided in the central portion, and an electrode 204 for holding the edge ring E by electrostatic adsorption is provided in the peripheral portion.

[0105] A DC voltage from a DC power source (not shown) is applied to electrode 204. The resulting electrostatic force causes the edge ring E to adhere to and remain on the upper surface (hereinafter referred to as the ring mounting surface) 201 1 of the periphery of the electrostatic chuck 201. Electrode 204 may be a bipolar type, for example, comprising a pair of electrodes, but may also be a unipolar type.

[0106] The lifting device 203 is a lifting member that moves up and down relative to the annular mounting surface 201 1 of the electrostatic chuck 201, and is, for example, formed in a columnar shape. When the lifting device 203 rises, its upper end protrudes from the annular mounting surface 201 1, and can support the edge ring E. With the lifting device 203, the edge ring E can be transferred between the electrostatic chuck 201 and the conveying arm 71 of the conveying mechanism 70. Furthermore, three or more lifting devices 203 are provided at intervals along the circumference of the electrostatic chuck 201. Also, the lifting devices 203 are provided in a manner that extends in the vertical direction.

[0107] The lift 203 is connected to the drive unit 205 that raises and lowers the lift 203. For example, each lift 203 is provided with a drive unit 205. Furthermore, the drive unit 205 has, for example, a motor (not shown) as a drive source that generates the driving force to raise and lower the lift 203.

[0108] The lifting device 203 is inserted into the insertion hole 206, which is an opening in the annular mounting surface 201 of the electrostatic chuck 201. The insertion hole 206 is formed, for example, by passing through the periphery of the electrostatic chuck 201, the lower electrode 200, and the insulator 202.

[0109] Furthermore, as shown in Figure 13, a heat transfer medium supply port 207 is formed on the annular mounting surface 201 1 of the electrostatic chuck 201 of the wafer support stage 101A. For example, a plurality of supply ports 207 are provided on the annular mounting surface 201 1. A groove 208 may also be provided on the annular mounting surface 201 1. The groove 208 is formed by the heat transfer medium extending along the annular mounting surface 201 1 through the groove 208.

[0110] Furthermore, a flow path 209 is provided inside the wafer support stage 101A, one end of which is in fluid communication with each supply port 207. The other end of the flow path 209 is, for example, in fluid connection to the gas supply section 210. Also, the flow path 209 may have a narrower end on the side of the annular mounting surface 201 1 (specifically, for example, a portion located within the electrostatic chuck 201), and the aforementioned heat transfer medium within the flow path 209 is supplied to the annular mounting surface 201 1 via the supply port 207 through capillary action. Furthermore, the flow path 209 is formed, for example, spanning the electrostatic chuck 201, the lower electrode 200, and the insulator 202.

[0111] The gas supply unit 210 may include one or more gas sources 211 and one or more flow controllers 212. In one embodiment, the gas supply unit 210 is configured to supply one or more types of heat transfer medium generating gas from their respective gas sources 211 to the wafer support stage 101A via their respective flow controllers 212. Each flow controller 212 may include, for example, a mass flow controller or a pressure-controlled flow controller. Furthermore, the gas supply unit 210 may include one or more flow modulation elements for modulating or pulsed the flow rate of one or more types of heat transfer medium generating gas.

[0112] The heat transfer medium generated by the gas supply unit 210 is cooled in the flow path 209, for example by the lower electrode 200 after being cooled by the temperature regulating fluid in the flow path 108, thereby liquefying or solidifying into a heat transfer medium composed of at least one of a liquid medium or a fluid solid medium. As described above, the heat transfer medium is supplied to the annular mounting surface 2011 via the supply port 207 through capillary action, thereby forming the heat transfer layer DA. Therefore, the flow path 108 can function as at least part of a cooling mechanism configured to cool the heat transfer medium generated in the flow path 209 into a heat transfer medium using gas, and the gas supply unit 210 can function as at least part of a heat transfer layer forming unit configured to form the heat transfer layer DA on the annular mounting surface 2011.

[0113] <Wafer Processing in Processing Module 1A> Next, an example of wafer processing, including the processing of the exchange edge ring E, performed using processing module 1A will be described. This will be explained using Figures 14 to 17. Figure 14 is a flowchart illustrating an example of the above-described wafer processing. Figures 15 to 17 are diagrams showing the state of processing module 1A in the above-described wafer processing. Furthermore, the following processing is performed under the control of control unit 160.

[0114] For example, first, as shown in Figures 14 and 15, the edge ring E is placed on the ring mounting surface 2011 of the wafer support stage 101A (step S11). Specifically, the edge ring E is moved into the plasma processing chamber 100 by the conveying mechanism 70, and the edge ring E is placed on the ring mounting surface 2011 of the electrostatic chuck 201 by the lifting mechanism 203. Then, the interior of the plasma processing chamber 100 is depressurized to a specific vacuum level (pressure p11) by the exhaust system 150.

[0115] Furthermore, the transport of the edge ring E into the plasma processing chamber 100 is carried out, for example, in the following manner. That is, firstly, the edge ring E within the receiving module 60 is held by the conveying arm 71 of the conveying mechanism 70. Then, the conveying arm 71 holding the edge ring E is inserted into the plasma processing chamber 100 of the processing module 1A through the inlet / outlet (not shown). Then, the edge ring E is conveyed by the conveying arm 71 to the top of the ring mounting surface 201 1 of the electrostatic chuck 201. Subsequently, by lifting the elevator 203 and pulling the conveying arm 71 out of the plasma processing chamber 100, the edge ring E is placed on the ring mounting surface 201 1 of the electrostatic chuck 201.

[0116] Subsequently, as shown in Figure 16, a heat transfer medium consisting of at least one of a liquid medium or a fluid solid medium is supplied through the wafer support stage 101A to the back side of the ring mounting surface 2011 and the edge ring E to form a heat transfer layer DA (step S12).

[0117] Specifically, the edge ring E is held on the wafer support stage 101A. For example, a DC voltage is applied to the electrode 204 of the electrostatic chuck 201, and the edge ring E is electrostatically attracted to the electrostatic chuck 201 by electrostatic force. At this time, the temperature of the ring mounting surface 201 1 is adjusted to temperature T11, and therefore, the flow path 209 is also adjusted to temperature T11. Furthermore, temperature T11 is set to a temperature that can effectively carry out the process processing, for example, equal to the temperature of the ring mounting surface 201 1 during process processing.

[0118] After the edge ring E is held on the wafer support stage 101A, a heat transfer medium generating gas is supplied from the gas supply section 210 to the flow path 209 of the wafer support stage 101A at a temperature T12 (>T11) and a pressure p12 (>p11). The heat transfer medium generating gas supplied to the flow path 209 is cooled to a temperature T11 within the flow path 209, becoming a heat transfer medium composed of at least one of a liquid medium or a fluid solid medium. Then, this heat transfer medium is supplied to the ring mounting surface 2011 via the supply port 207, for example, by capillary action. The heat transfer medium supplied to the ring mounting surface 2011 expands along the ring mounting surface 2011 by capillary action generated by the gap between the ring mounting surface 2011 and the back surface of the edge ring E, forming a heat transfer layer DA. The heat transfer layer DA is freely deformable in the same way as the heat transfer layer D.

[0119] Furthermore, as described above, by providing the groove 208 on the annular mounting surface 2011, the gap between the annular mounting surface 2011 and the back surface of the edge ring E can be widened, thereby allowing the heat transfer medium to be appropriately extended along the annular mounting surface 2011 by means of capillary phenomenon. Furthermore, the pressure p13 applied to the heat transfer layer DA also includes the pressure applied to the heat transfer layer DA due to the electrostatic adsorption of the edge ring E, which is 0.1 Torr to 100 Torr.

[0120] Regarding the supply of heat transfer medium to the annular mounting surface 2011 (specifically, the supply of heat transfer medium generating gas from the gas supply section 210), for example, it stops when the supply amount reaches a certain amount (specifically, when the time for supplying heat transfer medium generating gas from the gas supply section 210 exceeds a certain time). Furthermore, for example, a monitoring device such as a camera can be used to monitor whether heat transfer medium leaks between the annular mounting surface 2011 and the back surface of the edge ring E; when leakage is detected, the supply of heat transfer medium to the annular mounting surface 2011 is stopped.

[0121] Then, plasma treatment is performed on the wafer W on the upper surface of the electrostatic chuck 201 on which the heat transfer layer DA is formed, i.e., on the mounting surface (step S13). Specifically, for example, plasma processing is performed in the same manner as illustrated in Figure 3. More specifically, for example, after placing wafer W on the wafer mounting surface 104 1 of wafer support stage 101A and forming a heat transfer layer D between the wafer mounting surface 104 1 and the back surface of wafer W, plasma processing is performed on wafer W. Subsequently, the heat transfer layer D is vaporized and removed, and wafer W is removed.

[0122] Furthermore, in the plasma process, for temperature control of the edge ring E, the ring mounting surface 201 1 is adjusted to a specific temperature T11 by a temperature-regulating fluid flowing in the flow path 108. Also, in the plasma process, the edge ring E is mounted on the ring mounting surface 201 1 with the heat transfer layer DA in between, and the heat transfer layer DA is freely deformable as described above, so the lower surface, i.e., the back surface, of the edge ring E is in close contact with the heat transfer layer DA. Moreover, the heat transfer layer DA is formed of a heat transfer medium, which is composed of at least one of a liquid medium or a fluid solid medium, and therefore has higher thermal conductivity than heat transfer gases such as He. Therefore, when using the heat transfer layer DA, compared to the case where heat transfer gases such as He are circulated between the ring mounting surface 201 1 and the back surface of the edge ring E, the temperature of the edge ring E can be adjusted more efficiently via the ring mounting surface 201 1. Specifically, even if the heat input from plasma P to edge ring E is relatively large during plasma processing, the temperature of edge ring E can be maintained at a fixed temperature by adjusting the temperature of ring mounting surface 2011. Furthermore, when the set temperature of edge ring E changes during plasma processing, the temperature of edge ring E can be immediately changed to the changed set temperature by adjusting the temperature of ring mounting surface 2011.

[0123] Furthermore, during plasma processing, a DC voltage is applied to the electrodes 204 of the electrostatic chuck 201, thereby electrostatically attracting and holding the edge ring E to the electrostatic chuck 201. Additionally, the degree of contact between the edge ring E and the wafer support stage 101A is controlled by electrostatic force, thereby controlling the cooling of the edge ring E using the wafer support stage 101A.

[0124] After plasma treatment of wafer W, the edge ring E is removed from the ring mounting surface 201 1, and the heat transfer layer DA is vaporized and removed (step S14). In one example, the heat transfer layer DA is removed by vaporizing it. It is not necessary to remove the edge ring E from the ring mounting surface 201 1 every time the wafer W is plasma treated, but rather to do so, for example, when the edge ring E is consumed, or when the heat transfer layer DA is damaged or consumed by the plasma.

[0125] In step S14, specifically, after the edge ring E is held on the wafer support stage 101A by the electrostatic chuck 201, the edge ring E rises by the lifter 203, leaving the ring mounting surface 2011 as shown in Figure 16. After the edge ring E leaves, the heat transfer layer DA is exposed to a reduced pressure atmosphere, specifically, to an atmosphere with a pressure p11 below 0.001 Torr, whereby it is vaporized and removed. Furthermore, in order to remove the heat transfer layer DA from the annular mounting surface 201 1, the heat transfer layer DA may be exposed to a reduced pressure atmosphere instead of being exposed to plasma, heated, or irradiated with light.

[0126] Furthermore, the gas used to generate the heat transfer medium in heat transfer layer DA may be the same as or different from the gas used to generate the heat transfer medium in heat transfer layer D.

[0127] Then, the edge ring E is moved out (step S15). Specifically, the edge ring E is delivered from the elevator 203 to the conveyor 70, and then removed from the plasma processing chamber 100 by the conveyor 70. This completes the series of wafer processing steps.

[0128] <Effects, etc.> As described above, in this embodiment, a heat transfer medium composed of at least one of a liquid medium or a fluid solid medium is supplied via the wafer support stage 101A to the space between the ring mounting surface 2011 and the back surface of the edge ring E, thereby forming a heat transfer layer DA. Therefore, in this embodiment, for the same reasons as in the first embodiment, the temperature of the edge ring E can be efficiently adjusted via the ring mounting surface 2011 during plasma processing. Furthermore, the blockage of the flow path 209 by the heat transfer medium can be suppressed. Moreover, there is no need to separately perform a step to remove the heat transfer layer DA, thus enabling increased production capacity.

[0129] Furthermore, in this embodiment, during plasma processing, the edge ring E is held in place on the ring mounting surface 2011 by the electrostatic force of the electrostatic chuck 201. This allows for closer contact between the heat transfer layer DA and the lower surface of the edge ring E, thereby further improving the cooling efficiency or heating efficiency of the edge ring E via the ring mounting surface 2011 and the heat transfer layer DA.

[0130] <Examples of variations when forming an edge ring heat transfer layer DA, examples of the electrical characteristics of the heat transfer layer DA, and specific examples of trench 208> In processing module 1 of Figures 1 and 2, the object whose temperature is adjusted via wafer support stage 101 and heat transfer layer D formed by heat transfer medium is wafer W. Similarly, in processing module 1A of Figures 12 and 13, both wafer W and edge ring E are objects of the aforementioned temperature adjustment. However, the object of temperature adjustment may also be only edge ring E. Specifically, in the processing module 1A of the examples in Figures 12 and 13, a configuration is provided for both flow path 209, etc., used to form heat transfer layer DA for edge ring E, and flow path 115, etc., used to form heat transfer layer D for wafer W, but the latter configuration may be omitted.

[0131] In the above example, the temperature adjustment targets both wafer W and edge ring E. The timing of forming the heat transfer layer D for wafer W can be different from, or the same as, the timing of forming the heat transfer layer DA for edge ring E. By making them the same, it is possible to increase production capacity.

[0132] Furthermore, the supply form of the heat transfer medium used to form the heat transfer layer DA for the edge ring E is not limited to the above example, and variations of the same supply form as the heat transfer medium used to form the heat transfer layer D for the above wafer W can be applied.

[0133] Furthermore, the heat transfer medium used to form the heat transfer layer DA for the edge ring E is not limited to the above example, and variations of the same heat transfer medium used to form the heat transfer layer D for the above wafer W can be applied.

[0134] Furthermore, regarding the trench 208 used to form the heat transfer layer DA for the edge ring E, the same specific example as the trench 114 used to form the heat transfer layer DA for the edge ring E can be applied.

[0135] Furthermore, the annular mounting surface can also be formed, similar to the wafer mounting surface, by porous bodies, comprising the portion other than the trench 208 (specifically, for example, the top of the support pillars within the trench 208). When the trench 208 is not provided on the annular mounting surface, the entire annular mounting surface can also be formed by porous bodies.

[0136] Furthermore, the heat transfer layer DA for the edge ring E can be formed on the entire ring mounting surface 201 1 in the same way as the heat transfer layer D for the wafer W, or it can be formed only in a portion of the ring mounting surface 201 1. For example, the heat transfer layer DA can be formed only on the inner periphery of the ring mounting surface 201 1, or it can be formed only on the outer periphery of the ring mounting surface 201 1.

[0137] Furthermore, the heat transfer layer DA used for the edge ring E can be of the same thickness as the heat transfer layer D used for the wafer W, with uneven thickness within the ring mounting surface 2011. For example, the heat transfer layer DA on the inner periphery of the ring mounting surface 2011 can be thinner than the heat transfer layer DA on the outer periphery, or the heat transfer layer DA on the outer periphery of the ring mounting surface 2011 can be thinner than the heat transfer layer DA on the inner periphery.

[0138] Furthermore, when the groove 208 is not formed on the annular mounting surface 2011 but the entire surface is formed by a porous body, the thickness of the porous body can be made different in different areas of the annular mounting surface 2011.

[0139] Furthermore, the heat transfer layer DA used for the edge ring E can also be formed by mixing a high thermal conductivity conductive medium and a low thermal conductivity conductive medium, and the mixing ratio of the high thermal conductivity conductive medium and the low thermal conductivity conductive medium is different in each region of the ring mounting surface 201 1.

[0140] Furthermore, the density of the groove 208 can be made different in different areas of the annular mounting surface 2011.

[0141] The heat transfer layer DA used in the edge ring E can have electrical insulation properties. Furthermore, the heat transfer layer DA can be electrically conductive. Furthermore, the heat transfer layer DA can also be constructed by covering a conductive portion with an electrically insulating portion.

[0142] As described above, the heat transfer layer DA can be formed on the entire annular mounting surface 2011, or it can be formed only on a portion of the annular mounting surface 2011. For the areas on the annular mounting surface 2011 where the heat transfer layer DA is not formed, heat transfer gases such as He gas can be supplied.

[0143] In the above example, as a fixing part that holds and fixes the edge ring E to the ring mounting surface 201, an electrostatic chuck 201 is used to hold it by electrostatic force, which is generated by applying a DC voltage to the internal electrode 204. As an electrically fixed part, it is not limited to being held by electrostatic force, but can also be held by Johansen-Labec force. The aforementioned fixing part is not limited to electrically retaining components as described above. For example, the aforementioned fixing part can also be a physical fixing component such as a clamp. Furthermore, the aforementioned fixing parts can also be omitted.

[0144] Furthermore, in the above example, the edge ring E is housed in the storage module 60 connected to the transfer module 50, and can also be stored in the wafer transport box mounted on the load port 32 in the same way as the wafer W.

[0145] (Other examples of variations) In the above examples, plasma etching is performed as a plasma treatment, but the technology of the present invention can also be applied to situations where other treatments besides etching (such as film formation) are performed as plasma treatments.

[0146] Furthermore, on the wafer support stage of the plasma processing module, a cover ring is sometimes mounted in a manner that covers the outer side of the edge ring. In this case, similar to the heat transfer layer DA used for the edge ring E mentioned above, a heat transfer medium can be supplied between the mounting surface of the cover ring and the bottom surface of the cover ring in the wafer support stage to form a heat transfer layer.

[0147] The embodiments disclosed herein should be understood as illustrative in all respects and not as limiting. The above embodiments can also be omitted, substituted, and modified in various ways without departing from the scope and spirit of the appended patent applications. For example, the constituent elements of the above embodiments can be arbitrarily combined. Based on such arbitrary combinations, the functions and effects of each constituent element related to the combination can be obtained, and other functions and effects as specified by the manufacturer in this specification can also be obtained.

[0148] Furthermore, the effects described in this specification are for illustrative or exemplary purposes only and are not intended to limit the scope of the invention. That is, the technology of this invention can achieve, or replace, the aforementioned effects while obtaining them, other effects as defined by the manufacturer based on the description herein.

[0149] Furthermore, the following configuration examples also fall within the technical scope of this invention. (1) A processing method, which involves plasma treatment of a substrate, and includes the following steps: The temperature-adjustable object is placed on the mounting surface of a substrate support portion configured within a decompression-capable processing container; A heat transfer medium, consisting of at least one of a liquid medium or a fluid solid medium, is supplied via the substrate support to the space between the mounting surface of the substrate support and the back surface of the temperature-adjustable object, thereby forming a heat transfer layer; Plasma treatment is performed on the substrate on the mounting surface on which the above-mentioned heat transfer layer is formed; and After plasma treatment, the temperature-adjusted object is removed from the mounting surface. (2) The processing method described in (1) above, wherein the forming step includes the following steps: supplying a heat transfer medium generating gas to the substrate support portion and cooling it in the substrate support portion to become the heat transfer medium. (3) The processing method as described in (1) or (2) above, wherein the forming step includes the following step: supplying the heat transfer medium from the outside of the substrate support portion to the substrate support portion. (4) The processing method as described in (2) or (3) above, wherein the above forming step includes the following step: supplying the heat transfer medium in the substrate support portion to the mounting surface by means of capillary phenomenon. (5) The processing method described in any one of (1) to (4) above, wherein the forming step includes the following step: the heat transfer medium supplied to the back side of the mounting surface and the temperature adjustment object is extended along the mounting surface by means of capillary phenomenon. (6) The processing method described in (5) above, wherein the above-mentioned expansion step is to expand the heat transfer medium through the groove formed on the above-mentioned mounting surface by means of capillary phenomenon. (7) The processing method described in any of (1) to (6) above, wherein the above forming step is to form the heat transfer layer only in a portion of the temperature-adjustable object. (8) The processing method described in any of (1) to (7) above, wherein the above forming step is to form the heat transfer layer of different thickness in each region of the temperature adjustment object. (9) The processing method described in any of (1) to (8) above, wherein the above forming step forms the heat transfer layer in a manner in which the ratio of the portion in which the heat transfer layer is formed is different in each region of the temperature-adjustable object. (10) The processing method described in any of (1) to (9) above, wherein in the above forming step, the temperature adjustment object is fixed to the above mounting surface. (11) The processing method described in (10) above, wherein the temperature adjustment object is adsorbed, held and fixed on the mounting surface by the electrostatic force of the electrostatic chuck. (12) The processing method described in any one of (1) to (11) above, wherein at least one of the temperature adjustment target system substrate or the edge ring arranged in such a way as to surround the substrate placed on the mounting surface. (13) The processing method described in (12) above, wherein both the temperature adjustment target system substrate and the edge ring are included. The above-described forming steps on the substrate are performed at a different time sequence than the above-described forming steps on the edge ring. (14) The processing method described in (12) above, wherein both the temperature adjustment target system substrate and the edge ring are included. The above-described forming steps on the substrate are performed in the same sequence as the above-described forming steps on the edge ring. (15) The processing method described in any of (1) to (14) above, wherein the heat transfer layer is removed when the temperature adjustment object is removed from the mounting surface. (16) A plasma treatment apparatus comprising: The processing container is configured to depressurize; A substrate support portion, disposed within the aforementioned processing container, has a mounting surface for placing a substrate; and Control Department; and The aforementioned substrate support portion has a flow path for supplying a heat transfer medium composed of at least one of a liquid medium or a fluid solid medium to the space between the mounting surface and the back surface of the substrate. The aforementioned control unit performs control by executing the following steps: The temperature-adjustable object is placed on the aforementioned mounting surface; The aforementioned heat transfer medium is supplied via the aforementioned substrate support to the space between the aforementioned mounting surface and the back surface of the aforementioned temperature adjustment object, thereby forming a heat transfer layer; Plasma treatment is performed on the substrate on the mounting surface on which the above-mentioned heat transfer layer is formed; and After plasma treatment, the temperature-adjusted object is removed from the mounting surface. (17) The plasma processing apparatus as described in (16) above further comprises: a gas supply unit that supplies heat transfer medium generating gas to the flow path of the substrate support unit; and A cooling mechanism that cools the heat transfer medium in the flow path with gas, so that it becomes the heat transfer medium. (18) The plasma processing apparatus as described in (16) or (17) above further includes a medium supply section for supplying the heat transfer medium to the flow path of the substrate support section. (19) The plasma processing apparatus described in any of (16) to (18) above, wherein the flow path is formed in such a way that the heat transfer medium is supplied to the mounting surface by means of capillary phenomenon. (20) The plasma treatment apparatus as described in any one of (16) to (19) above, wherein the mounting surface is formed with grooves. The aforementioned groove is formed by the aforementioned heat transfer medium expanding along the aforementioned mounting surface through the groove via capillary action. (21) The plasma treatment apparatus as described in (20) above, wherein the trench is formed only in a portion of the mounting surface. (22) The plasma treatment apparatus as described in (20) or (21) above, wherein the depth of the trench varies in different regions of the mounting surface. (23) The plasma treatment apparatus described in any of (20) to (22) above, wherein the density of the trenches is different in different regions of the mounting surface. (24) The plasma treatment apparatus described in any of (20) to (23) above has a porous body disposed inside the trench. (25) The plasma processing apparatus described in any of (16) to (24) above further includes a fixing portion for fixing the substrate to the mounting surface. (26) The plasma treatment apparatus as described in (25) above, wherein the fixing part is an electrostatic chuck that adsorbs, holds and fixes the temperature adjustment object to the mounting surface by means of electrostatic force. (27) The plasma processing apparatus described in any of (16) to (25) above, wherein at least one of the temperature adjustment target system substrate or the edge ring arranged in such a way as to surround the substrate placed on the mounting surface. (28) The plasma processing apparatus as described in (27) above, wherein both the temperature adjustment target system substrate and the edge ring, The above-described forming steps on the substrate are performed at a different time sequence than the above-described forming steps on the edge ring. (29) The plasma processing apparatus as described in (27) above, wherein both the temperature adjustment target system substrate and the edge ring, The above-described forming steps on the substrate are performed in the same sequence as the above-described forming steps on the edge ring. (30) The processing method described in any of (16) to (29) above, wherein the heat transfer layer is removed when the temperature adjustment object is removed from the mounting surface.

[0150] 1: Processing Module 1A: Processing Module 10: Atmospheric Department 11: Decompression Section 20: Load the interlocking module 21: Loading the locking module 30: Loading Module 31: Wafer Transfer Box 32: Load Port 40: Moving and transporting organizations 41:Conveying arm 42: Rotary table 43:Abutment 44: Guide rail 50: Transfer Module 51: Decompression and Transfer Room 60: Storage Module 61: Gate valve 62: Gate valve 70: Moving and transporting organizations 71:Conveying arm 72: Rotary Table 73:Abutment 74: Guide rail 80: Control Department 90: Computer 91: Processing Department 92: Memory Department 93: Communication Interface 100: Plasma treatment chamber 100e: Exhaust port 100s: Plasma processing space 101: Wafer Support Stage 101A: Wafer Support Stage 102: Upper electrode 102a: Gas Inlet 102b: Gas diffusion chamber 102c: Gas inlet 103: Lower electrode 104: Electrostatic Chuck 104 1: Wafer mounting surface 104 2: Upper surface 105: Insulator 106: Feet 107: Lifting device 108:Flow path 109: Electrode 110: Supporting Components 111: Drive Unit 112: Through hole 113: Supply Port 114: Trench 115:Flow path 116: Support column 117:Porous body 120: Gas Supply Department 121: Gas Source 122: Flow controller 130: Gas Supply Department 131: Gas Source 132: Flow controller 140: RF Power Supply Department 141a: First RF Generation Unit 141b: Second RF Generation Unit 142a: First Matching Circuit 142b: Second Matching Circuit 150: Exhaust System 160: Control Department 170: Computer 171: Processing Department 172: Memory Department 173: Communication Interface 180: Media Supply Department 181: Source 182: Flow Controller 200: Lower electrode 201: Electrostatic Chuck 201 1: Ring-mounted surface 202: Insulator 203: Lifter 204: Electrode 205: Drive Unit 206: Through hole 207: Supply Port 208: Trench 209:Flow path 210: Gas Supply Department 211: Gas Source 212: Flow controller D: Heat transfer layer DA: Heat transfer layer E: Edge ring P: Plasma PS: Plasma treatment system S1, S2, S3, S4, S5, S11, S12, S13, S14, S15: Steps W: Wafer

Claims

1. A processing method for plasma processing of a substrate, comprising the following steps: placing a temperature-adjustable object on a mounting surface of a substrate support portion configured within a depressurization-capable processing container; supplying a heat transfer medium, consisting of at least one of a liquid medium or a fluid solid medium, through the substrate support portion to the space between the mounting surface of the substrate support portion and the back surface of the temperature-adjustable object, thereby forming a heat transfer layer; performing plasma processing on the substrate on the mounting surface on which the heat transfer layer is formed; and, after plasma processing, removing the temperature-adjustable object from the mounting surface; wherein the forming step comprises the following steps: supplying a heat transfer medium generating gas into the substrate support portion, cooling it within the substrate support portion, and thus transforming it into the heat transfer medium.

2. The processing method of claim 1, wherein the above-mentioned forming step includes the following step: supplying the heat transfer medium in the substrate support portion to the mounting surface by means of capillary phenomenon.

3. A processing method for plasma treatment of a substrate, comprising the steps of: placing a temperature-adjustable object on a mounting surface of a substrate support portion configured within a processing container capable of depressurization; supplying a heat transfer medium, consisting of at least one of a liquid medium or a fluid solid medium, through the substrate support portion to the space between the mounting surface of the substrate support portion and the back surface of the temperature-adjustable object, thereby forming a heat transfer layer; performing plasma treatment on the substrate on the mounting surface on which the heat transfer layer is formed; and, after plasma treatment, removing the temperature-adjustable object from the mounting surface; wherein the forming step comprises the step of: extending the heat transfer medium supplied between the mounting surface and the back surface of the temperature-adjustable object along the mounting surface by means of capillary action.

4. The processing method of claim 3, wherein the above-mentioned expansion step is achieved by expanding the heat transfer medium through the groove formed on the mounting surface by means of capillary phenomenon.

5. The processing method of claim 1, wherein the above forming step is to form the heat transfer layer only in a portion of the temperature-adjustable object.

6. The processing method of claim 1, wherein the above forming step involves forming heat transfer layers of different thicknesses in different regions of the temperature adjustment object.

7. The processing method of claim 1, wherein the above forming step is to form the heat transfer layer in such a way that the ratio of the portion in which the heat transfer layer is formed is different in each region of the temperature adjustment object.

8. The processing method of claim 1, wherein in the above forming step, the temperature adjustment object is fixed to the above mounting surface.

9. The processing method of claim 8, wherein the temperature adjustment object is adsorbed, held and fixed on the mounting surface by the electrostatic force of the electrostatic chuck.

10. The processing method of any one of claims 1 to 9, wherein at least one of the above-mentioned temperature adjustment target system substrate or the edge ring arranged in such a way as to surround the substrate placed on the above-mentioned mounting surface.

11. The processing method of claim 1, wherein the forming steps of the substrate and the edge ring arranged to surround the substrate placed on the mounting surface are performed at a different time sequence than the forming steps of the edge ring.

12. A processing method for plasma processing a substrate, comprising the steps of: placing a temperature-adjustable object on a mounting surface of a substrate support portion configured within a processing container capable of depressurization; supplying a heat transfer medium, consisting of at least one of a liquid medium or a fluid solid medium, through the substrate support portion to the space between the mounting surface of the substrate support portion and the back surface of the temperature-adjustable object, thereby forming a heat transfer layer; performing plasma processing on the substrate on the mounting surface where the heat transfer layer is formed; and, after plasma processing, removing the temperature-adjustable object from the mounting surface; wherein the formation steps of the substrate and the edge ring arranged to surround the substrate placed on the mounting surface are performed in the same sequence as the formation steps of the edge ring.

13. The processing method of any one of claims 1 to 9 and 12, wherein the above-mentioned forming step includes the following step: supplying the heat transfer medium from the outside of the above-mentioned substrate support portion to the inside of the above-mentioned substrate support portion.

14. A plasma processing apparatus comprising: a processing container configured to depressurize; a substrate support disposed within the processing container and having a mounting surface for mounting a substrate; and a control unit; wherein the substrate support has a flow path for supplying a heat transfer medium composed of at least one of a liquid medium or a fluid solid medium to the space between the mounting surface and the back surface of the substrate, and the control unit controls the process by performing the following steps: placing a temperature-adjustable object on the mounting surface; and supplying the heat transfer medium via the substrate support to the space between the mounting surface and the back surface of the temperature-adjustable object to form a heat transfer layer; The substrate on the mounting surface on which the heat transfer layer is formed is subjected to plasma treatment; and after the plasma treatment, the temperature adjustment object is removed from the mounting surface; and the plasma treatment apparatus further includes: a gas supply unit that supplies heat transfer medium generating gas to the flow path of the substrate support unit; and a cooling mechanism that cools the heat transfer medium generating gas in the flow path to make it the heat transfer medium.

15. The plasma processing apparatus of claim 14, wherein the cooling mechanism further comprises: other flow paths formed inside the substrate support portion; and a cooling unit that supplies a cooling medium for cooling the substrate support portion to the other flow paths.

16. A plasma processing apparatus comprising: a processing container configured to depressurize; a substrate support disposed within the processing container and having a mounting surface for mounting a substrate; and a control unit; wherein the substrate support has a flow path for supplying a heat transfer medium, consisting of at least one of a liquid medium or a fluid solid medium, to the space between the mounting surface and the back surface of the substrate; and the control unit controls the process by performing the following steps: placing a temperature-adjustable object on the mounting surface; supplying the heat transfer medium via the substrate support to the space between the mounting surface and the back surface of the temperature-adjustable object to form a heat transfer layer; performing plasma processing on the substrate on the mounting surface on which the heat transfer layer is formed; and, after plasma processing, removing the temperature-adjustable object from the mounting surface; wherein the flow path is formed such that the heat transfer medium is supplied to the mounting surface via capillary action.

17. A plasma processing apparatus comprising: a processing container configured to depressurize; a substrate support disposed within the processing container and having a mounting surface for mounting a substrate; and a control unit; wherein the substrate support has a flow path for supplying a heat transfer medium, consisting of at least one of a liquid medium or a fluid solid medium, to the space between the mounting surface and the back surface of the substrate; and the control unit controls the process by performing the following steps: placing a temperature-adjustable object on the mounting surface; supplying the heat transfer medium via the substrate support to the space between the mounting surface and the back surface of the temperature-adjustable object to form a heat transfer layer; performing plasma processing on the substrate on the mounting surface where the heat transfer layer is formed; and, after plasma processing, removing the temperature-adjustable object from the mounting surface; and wherein the mounting surface has a groove formed in which the heat transfer medium expands along the mounting surface via the groove through a capillary phenomenon.

18. The plasma treatment apparatus of claim 17, wherein the trench is formed only in a portion of the mounting surface.

19. The plasma treatment apparatus of claim 17, wherein the depth of the trench varies in different regions of the mounting surface.

20. The plasma treatment apparatus of claim 17, wherein the density of the trenches is different in different regions of the mounting surface.

21. The plasma treatment apparatus of claim 17, wherein a porous body is disposed inside the aforementioned trench.

22. The plasma processing apparatus of any one of claims 14 to 16, wherein the entire mounting surface is formed of a porous body.

23. The plasma processing apparatus of any one of claims 14 to 21, wherein the aforementioned mounting surface is formed such that the central region is higher than the peripheral region.

24. The plasma processing apparatus of any one of claims 14 to 21, wherein the aforementioned mounting surface is formed such that the central region is lower than the peripheral region.

25. The plasma processing apparatus of any one of claims 14 to 21 further includes a fixing portion for fixing the substrate to the aforementioned mounting surface.

26. The plasma processing apparatus of claim 25, wherein the fixing part is an electrostatic chuck that adsorbs, holds, and fixes the temperature adjustment object to the mounting surface by means of electrostatic force.

27. The plasma processing apparatus of any one of claims 14 to 21, wherein at least one of the aforementioned temperature adjustment target system substrate or the edge ring arranged in such a way as to surround the substrate placed on the aforementioned mounting surface.

28. The plasma processing apparatus of any one of claims 14 to 21, wherein the formation steps of the substrate and the edge ring arranged to surround the substrate placed on the mounting surface are performed at a different time sequence than the formation steps of the edge ring.

29. A plasma processing apparatus comprising: a processing container configured to depressurize; a substrate support disposed within the processing container and having a mounting surface for mounting a substrate; and a control unit; wherein the substrate support has a flow path for supplying a heat transfer medium, consisting of at least one of a liquid medium or a fluid solid medium, to the space between the mounting surface and the back surface of the substrate; and the control unit controls the process by performing the following steps: placing a temperature-adjustable object on the mounting surface; supplying the heat transfer medium via the substrate support to the space between the mounting surface and the back surface of the temperature-adjustable object to form a heat transfer layer; performing plasma processing on the substrate on the mounting surface on which the heat transfer layer is formed; and, after plasma processing, removing the temperature-adjustable object from the mounting surface; wherein the formation steps of the substrate and the edge ring arranged to surround the substrate placed on the mounting surface are performed in the same sequence as the formation steps of the edge ring.

30. The plasma processing apparatus of any one of claims 14 to 21 and 29, further comprising a medium supply section for supplying the heat transfer medium to the flow path of the substrate support portion.

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