Processing method and processing system

TWI937286BActive Publication Date: 2026-09-01TOKYO ELECTRON LTD
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Patent Information

Application Number
TW111129669
Authority / Receiving Office
TW · TW
Patent Type
Patents
Current Assignee / Owner
Priority Date
2021-12-08
Filing Date
2022-08-08
Publication Date
2026-09-01
Estimated Expiration
2042-08-07

AI Technical Summary

Technical Problem

Existing methods struggle to reliably reduce the bonding force between substrates during edge trimming due to variations in thickness or structure, leading to inconsistent delamination and potential damage to the absorbing film.

Method used

A method involving pulsed laser irradiation of a laser absorbing film on the substrate interface, controlled by adjusting the temperature difference and frequency of laser light to form an unbonded region, allowing precise separation of substrates.

Benefits of technology

Ensures reliable and efficient removal of substrate portions by controlling the bonding force, minimizing damage to the absorbing film, and improving processing accuracy and throughput.

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Smart Images

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Patent Text Reader

Abstract

This invention relates to a method for processing an overlapping substrate in which a first substrate and a second substrate are joined, comprising the following steps: obtaining layer information of the overlapping substrate; irradiating a laser absorption film formed at the interface between the first substrate and the second substrate with pulsed laser light to form an unbonded region where the bonding strength between the first substrate and the second substrate decreases; and separating the first substrate from the second substrate; during the formation of the unbonded region, the temperature difference between a first temperature in the region directly below the laser light irradiation of a focal point containing pulsed laser light and a second temperature in the region surrounding the laser light irradiation formed between the focal point and another focal point irradiated by the laser light is varied based on the obtained layer information or at least one of the radial positions of a focal point on the overlapping substrate.
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Citation Information

Patent Citations

  • Method of processing wafer

    JP2004111606A

  • Manufacturing method of semiconductor device and the semiconductor device

    JP2020155493A

  • Substrate processing method and substrate processing system

    JP2021068869A

  • Substrate processing method and substrate processing system

    JP2021103725A