Apparatus for processing substrate and method for manufacturing metal oxide semiconductor

Abstract

This invention relates to a substrate processing apparatus and a method for manufacturing a metal oxide semiconductor, wherein the substrate processing apparatus includes: a cavity, a substrate support unit disposed in the cavity, and a spraying unit disposed above the substrate support unit.

Description

Technical Field

[0001] This invention relates to a substrate processing apparatus for performing processing processes such as deposition and etching on a substrate. Prior Technology

[0002] Generally, in order to manufacture solar cells, semiconductor devices, flat panel display devices, etc., thin film layers, thin film circuit patterns, or optical patterns should be formed on a substrate. For this purpose, processing processes are performed on the substrate, and examples of processing processes include: deposition processes that deposit thin films containing specific materials on the substrate, exposure processes that selectively expose a portion of the thin film using a photosensitive material, and etching processes that remove the selectively exposed portions of the thin film to form patterns.

[0003] This type of processing is performed on a substrate using substrate processing equipment. The substrate processing equipment uses gas supplied from a gas supply device to perform the processing on the substrate.

[0004] Figure 1 is a block diagram of a substrate processing device according to related technologies.

[0005] Referring to FIG1, a substrate processing apparatus 10 according to the related art includes an injection unit 11 for injecting gas toward a substrate, a first supply unit 12 for supplying a first gas to the injection unit 11, and a second supply unit 13 for supplying a second gas to the injection unit 11. The first gas supplied by the first supply unit 12 and the second gas supplied by the second supply unit 13 are mixed with each other in a mixing space provided in the injection unit 11, and then injected toward the substrate.

[0006] Therefore, since the gas flow path for enabling the first gas and the second gas to flow should be provided in the injection unit 11, the mixing space is implemented to be narrow. As a result, in the substrate processing apparatus 10 according to the related art, it is difficult to control the mixing ratio of the first gas and the second gas, and for this reason, the deviation of the mixing ratio of the first gas and the second gas will increase, thereby causing the problem of film quality degradation of the thin film formed using the first gas and the second gas. Summary of the Invention

[0007] [Technical Issues]

[0008] The present invention is designed to solve the above-mentioned problems and to provide a substrate processing method that can improve the film quality of thin films formed using a first gas and a second gas.

[0009] The present invention provides a method for manufacturing metal oxide semiconductors, which can improve the step coverage of an oxide layer containing gallium.

[0010] [Technical means]

[0011] To achieve the above objectives, the present invention may include the following elements.

[0012] The substrate processing apparatus according to the present invention may include: a cavity; a substrate support unit disposed in the cavity; an injection unit disposed above the substrate support unit; a first source supply unit for supplying a first source gas; a second source supply unit for supplying a second source gas; a first supply line connecting the first source supply unit and the injection unit; a second supply line connecting the second source supply unit and the injection unit; a mixing unit installed in the first supply line to be disposed between the first source supply unit and the injection unit; a first connecting line connecting the second supply line to at least one of the first supply line and the mixing unit; and a first path changing unit installed at a first connection point of the first connecting line connected to the second supply line. The first path changing unit can change the flow path of the second source gas, so that the second source gas supplied from the second source supply unit is supplied to one selected from the mixing unit and the injection unit.

[0013] The method for manufacturing a metal oxide semiconductor according to the present invention forms an oxide layer on the exposed surface of a thin film, and may include: step a) preparing a substrate with a patterned exposed surface of the thin film; step b) forming a first channel layer on the exposed surface using at least one of indium oxide (InO), zinc oxide (ZnO), and tin oxide (SnO); and step c) forming a second channel layer using gallium oxide (GaO).

[0014] [Beneficial effects]

[0015] According to the present invention, the following effects can be achieved.

[0016] The substrate processing apparatus according to the present invention is implemented to generate a mixed gas by mixing multiple source gases in a mixing space that is wider than the interior of the spraying unit. Therefore, the substrate processing apparatus according to the present invention improves the ease of controlling the mixing composition ratio of the multiple source gases. Furthermore, the substrate processing apparatus according to the present invention reduces deviations in the mixing composition ratio of the multiple source gases, thereby improving the film quality of thin films formed using the multiple source gases.

[0017] The substrate processing apparatus according to the invention is implemented to perform a co-flow processing process in which a mixture of multiple source gases is sprayed toward a substrate, and a nano-lamination processing process in which multiple source gases are sequentially sprayed toward a substrate. Therefore, the substrate processing apparatus according to the invention provides customers with options for processing procedures, and thus helps to ensure a diversity of processing procedures that can be performed, and further helps to reduce customers' equipment setup costs.

[0018] The substrate processing apparatus according to the invention is implemented such that, in the case of a nano-lamination process in which multiple source gases are sequentially sprayed toward the substrate, a portion of the source gases is directly delivered to the spraying unit without passing through a mixing unit. Therefore, the substrate processing apparatus according to the invention eliminates the need for a purging process using purging gas to remove the contents of the mixing unit during the nano-lamination process, and thus reduces the time spent in the processing, thereby increasing the substrate yield for the processing.

[0019] The method for manufacturing a metal oxide semiconductor according to the present invention can be implemented by first forming a first channel layer using at least one of indium, zinc, and tin, which has higher reactivity with the hydroxyl groups (-OH) of thin films compared to gallium. Therefore, the method for manufacturing a metal oxide semiconductor according to the present invention can improve the step coverage to enhance the film quality of the oxide layer.

[0020] The method for manufacturing a metal-oxide-semiconductor according to the present invention can be implemented to independently form a first channel layer and a second channel layer. Therefore, the method for manufacturing a metal-oxide-semiconductor according to the present invention improves the accuracy of controlling the composition ratio between the precursors of the first channel layer and the precursors of the second channel layer, as well as the ease of operation. Simple Explanation of the Diagram

[0021] Figure 1 is a block diagram of a substrate processing apparatus according to related technologies. Figure 2 is a block diagram of a substrate processing apparatus according to the present invention. Figures 3 and 4 are side sectional views of a gas injection unit in the substrate processing apparatus according to the present invention. Figures 5 to 8 are block diagrams of a substrate processing apparatus according to the present invention. Figure 9 is a side sectional view illustrating an example of a metal-oxide-semiconductor. Figures 10 to 12 are schematic flowcharts of a method for manufacturing a metal-oxide-semiconductor according to the present invention. Figures 13 and 14 are schematic flowcharts of a method for manufacturing a metal-oxide-semiconductor according to a modified embodiment of the present invention. Implementation

[0022] Hereinafter, an embodiment of the substrate processing apparatus according to the present invention will be described in detail with reference to the accompanying drawings.

[0023] Referring to FIG. 2, the substrate processing apparatus 1 according to the present invention performs processing processes on a substrate S. The substrate S may be a silicon substrate, a glass substrate, a metal substrate, etc. The substrate processing apparatus 1 according to the present invention can perform deposition processes such as depositing a thin film on the substrate S and etching processes such as removing a portion of the thin film deposited on the substrate S. Hereinafter, embodiments of deposition processes performed by the substrate processing apparatus 1 according to the present invention will be mainly described, and based on this, it will be apparent to those skilled in the art that an embodiment is designed such that the substrate processing apparatus 1 according to the present invention performs another processing process such as an etching process.

[0024] The substrate processing apparatus 1 according to the present invention may include a cavity 2, a substrate support unit 3, and a spraying unit 4.

[0025] Referring to Figure 2, cavity 2 provides processing space 100. Processing processes such as deposition and etching on substrate S can be performed in processing space 100. Processing space 100 can be disposed in cavity 2. Exhaust port (not shown) for discharging gas from processing space 100 can be coupled to cavity 2. Substrate support unit 3 and spray unit 4 can be disposed in cavity 2.

[0026] Referring to Figure 2, the substrate support unit 3 supports the substrate S. The substrate support unit 3 can support one substrate S or multiple substrates S. When these substrates S are supported by the substrate support unit 3, the processing steps on these substrates S can be performed simultaneously. The substrate support unit 3 can be coupled to the cavity 2. The substrate support unit 3 can be disposed within the cavity 2.

[0027] Referring to Figures 2 to 4, the spraying unit 4 sprays gas toward the substrate support unit 3. The spraying unit 4 can be disposed within the cavity 2. The spraying unit 4 can be positioned opposite the substrate support unit 3. The spraying unit 4 can be disposed above the substrate support unit 3 relative to a vertical direction. The vertical direction is an axial direction parallel to the direction in which the spraying unit 4 and the substrate support unit 3 are separated from each other. The processing space 100 can be disposed between the spraying unit 4 and the substrate support unit 3. The spraying unit 4 can be coupled to a cover (not shown). The cover can be coupled to the cavity 2 to cover the top of the cavity 2. The spraying unit 4 can be connected to a gas supply unit 40. In this case, the spraying unit 4 can spray gas supplied from the gas supply unit 40 toward the substrate support unit 3.

[0028] The injection unit 4 may include a first gas flow path 4a and a second gas flow path 4b.

[0029] The first gas flow path 4a is used for injecting gas. The first gas flow path 4a can be connected to the processing space 100. Therefore, gas can flow along the first gas flow path 4a, and then be injected into the processing space 100 through the first gas flow path 4a. The first gas flow path 4a can serve as a flow path for enabling gas to flow and as a jet port for injecting gas into the processing space 100. One side of the first gas flow path 4a can be connected to the gas supply unit 40 through a flow tube, hose, or gas block. The other side of the first gas flow path 4a can be connected to the processing space 100. Therefore, gas supplied from the gas supply unit 40 can flow along the first gas flow path 4a, and then be injected into the processing space 100 through the first gas flow path 4a.

[0030] The second gas flow path 4b is used for injecting gas. The gas injected through the second gas flow path 4b and the gas injected through the first gas flow path 4a can be different gases. For example, the gas injected through the second gas flow path 4b and the gas injected through the first gas flow path 4a can be different source gases. For example, the gas injected through the second gas flow path 4b can be a reactant gas, and the gas injected through the first gas flow path 4a can be a source gas. The second gas flow path 4b can be connected to the processing space 100. Therefore, gas can flow along the second gas flow path 4b, and then be injected into the processing space 100 through the second gas flow path 4b. The second gas flow path 4b can serve as a flow path for enabling gas flow and as a jet port for injecting gas into the processing space 100. One side of the second gas flow path 4b can be connected to the gas supply unit 40 through a flow tube, hose, or airflow block. The other side of the second gas flow path 4b can be connected to the processing space 100. Therefore, the gas supplied from the gas supply unit 40 can flow along the second gas flow path 4b, and then be injected into the processing space 100 through the second gas flow path 4b.

[0031] The second gas flow path 4b and the first gas flow path 4a can be spatially separated from each other. Therefore, the injection unit 4 can be configured such that the gas flowing along the second gas flow path 4b and the gas flowing along the first gas flow path 4a do not mix until they are injected into the processing space 100. The second gas flow path 4b and the first gas flow path 4a can inject gas toward different parts of the processing space 100.

[0032] As shown in Figure 3, the spraying unit 4 may include a first plate 41 and a second plate 42.

[0033] A first plate 41 is disposed above a second plate 42. The first plate 41 and the second plate 42 may be spaced apart from each other. A plurality of first vents 411 may be formed in the first plate 41. Each of the first vents 411 may serve as a path for gas flow. The first vents 411 may be included in a first gas flow path 4a. A plurality of second vents 412 may be formed in the first plate 41. Each of the second vents 412 may serve as a path for gas flow. The second vents 412 may be included in a second gas flow path 4b. A plurality of protrusions 413 may be formed in the first plate 41. The protrusions 413 may protrude from the bottom surface of the first plate 41 toward the second plate 42. Each of the first vents 411 may be formed to pass through the first plate 41 and the protrusions 413.

[0034] Multiple openings 421 may be formed in the second plate 42. The openings 421 may be formed to pass through the second plate 42. The openings 421 may be positioned corresponding to each of the protrusions 413. Therefore, as shown in FIG3, the protrusions 413 may be formed to a length that allows the protrusions 413 to be inserted into the openings 421 respectively. Although not shown, the protrusions 413 may be formed to a length that allows the protrusions 413 to be positioned above the openings 421 respectively. The protrusions 413 may be formed to protrude downwards from the second plate 42. A second vent 412 may be provided to spray gas toward the top surface of the second plate 42. Although not shown, the protrusions 413 may not be provided in the second plate 42. In this case, the bottom surface of the second plate 42 facing the first plate 41 may be formed to be flat.

[0035] The injection unit 4 can generate plasma using the second plate 42 and the first plate 41. In this case, plasma power, such as radio frequency (RF) power, can be supplied to the first plate 41, and the second plate 42 can be grounded. The first plate 41 can be grounded, and plasma power can be supplied to the second plate 42.

[0036] As shown in Figure 4, multiple first openings 422 and multiple second openings 423 can be formed in the second plate 42.

[0037] A first opening 422 may be formed to pass through the second plate 42. These first openings 422 may be connected to the first vents 411 respectively. In this case, a protrusion 413 may be provided to contact the top surface of the second plate 42. Gas may be injected into the processing space 100 through the first vents 411 and the first openings 422. The first vents 411 and the first openings 422 may be included in the first gas flow path 4a.

[0038] Multiple second openings 423 may be formed to pass through the second plate 42. These second openings 423 may be respectively connected to the buffer space 43 disposed between the first plate 41 and the second plate 42. Gas may be injected into the processing space 100 through the second vent 412, the buffer space 43, and the second openings 423. The second vent 412, the buffer space 43, and the second openings 423 may be included in the second gas flow path 4b.

[0039] Referring to FIG5, the substrate processing apparatus 1 according to the present invention may further include a source supply unit 5.

[0040] Source supply unit 5 is used to supply source gas. Source supply unit 5 may be included in gas supply unit 40. Source supply unit 5 can supply source gas to injection unit 4. In this case, injection unit 4 can inject the source gas supplied from source supply unit 5 toward substrate support unit 3. Source supply unit 5 may include a storage tank (not shown) for storing source gas and a flow rate control valve (not shown) for controlling the amount of source gas discharged from storage tank and supplied to injection unit 4.

[0041] Source supply unit 5 may include a first source supply unit 51 and a second source supply unit 52.

[0042] The first source supply unit 51 is used to supply a first source gas. The first source supply unit 51 can be connected to the injection unit 4 via a first supply line 511. When the injection unit 4 includes a first gas flow path 4a and a second gas flow path 4b, the first supply line 511 can be connected to both the first source supply unit 51 and the first gas flow path 4a. The first supply line 511 can be implemented as a hose, a flow tube, etc. The first supply line 511 can be implemented as a hole forming a specific structure.

[0043] The second source supply unit 52 is used to supply a second source gas. The second source supply unit 52 can be connected to the injection unit 4 via a second supply line 521. When the injection unit 4 includes a first gas flow path 4a and a second gas flow path 4b, the second supply line 521 can be connected to each of the second source supply unit 52 and the second gas flow path 4b. The second supply line 521 can be implemented as a hose, a flow tube, a tube body, etc. The second supply line 521 can be implemented as a hole forming a specific structure. Each of the second source gas and the first source gas can contain at least one of indium, gallium, zinc, and oxides. The second source gas and the first source gas can be different gases.

[0044] Referring to FIG5, the substrate processing apparatus 1 according to the present invention may include a mixing unit 6.

[0045] A mixing unit 6 is installed in the first supply line 511. The mixing unit 6 may be disposed between the first source supply unit 51 and the injection unit 4. The mixing unit 6 can mix multiple source gases to generate a mixed gas. In the case of a substrate processing apparatus 1 according to the present invention performing a processing process using a co-flow process of injecting a mixed gas from multiple source gases, the mixing unit 6 can mix the first source gas supplied from the first source supply unit 51 with the second source gas supplied from the second source supply unit 52 to generate a mixed gas, and then deliver the mixed gas to the injection unit 4 through the first supply line 511. In this case, the mixed gas can be supplied from the mixing unit 6 to the first gas flow path 4a through the first supply line 511 and can be injected toward the substrate S through the first gas flow path 4a. Furthermore, the second source gas may not be supplied to the second gas flow path 4b.

[0046] As described above, the substrate processing apparatus 1 according to the present invention is implemented to generate a mixed gas by mixing multiple source gases independently supplied from the injection unit 4 through a mixing unit 6. Therefore, compared to a comparative example where multiple source gases are mixed to generate a mixed gas in the injection unit 4, the substrate processing apparatus 1 according to the present invention can mix multiple source gases to generate a mixed gas in a mixing unit 6, which is wider than the interior of the injection unit 4. Therefore, the substrate processing apparatus 1 according to the present invention improves the ease of controlling the mixing composition ratio of the multiple source gases. Furthermore, the substrate processing apparatus 1 according to the present invention reduces deviations in the mixing composition ratio of the multiple source gases, thereby improving the film quality of thin films formed using multiple source gases.

[0047] The mixing unit 6 may be disposed outside the cavity 2. The mixing unit 6 may be disposed spaced apart from the cover of the cavity 2. The mixing unit 6 may be coupled to the cover of the cavity 2. The mixing unit 6 may be implemented as a tank that provides a mixing space therein.

[0048] Referring to Figures 5 to 7, the substrate processing apparatus 1 according to the present invention may include a first path transformation unit 7.

[0049] The first path changing unit 7 changes the flow path of the second source gas. The first path changing unit 7 can change the flow path of the second source gas so that the second source gas supplied from the second source supply unit 52 is supplied to an element selected from the mixing unit 6 and the injection unit 4.

[0050] When the first path changing unit 7 changes the flow path of the second source gas so that the second source gas is supplied to the mixing unit 6, the second source gas can be supplied to the injection unit 4 through the mixing unit 6. Therefore, the injection unit 4 can spray the mixed gas of the first source gas and the second source gas toward the substrate S. In this case, the substrate processing apparatus 1 according to the present invention can perform a co-flow processing process, and thus a thin film layer formed by the mixed gas can be deposited on the substrate S.

[0051] When the first path changing unit 7 changes the flow path of the second source gas so that the second source gas is supplied to the injection unit 4, the second source gas can be supplied to the injection unit 4 without passing through the mixing unit 6. Therefore, the injection unit 4 can independently inject the first source gas and the second source gas toward the substrate S without mixing them. In this case, the substrate processing apparatus 1 according to the present invention can perform a nano-lamination process, and thus can sequentially deposit a thin film layer formed by the first source gas and a thin film layer formed by the second source gas on the substrate S.

[0052] As described above, the substrate processing apparatus 1 according to the present invention is implemented to perform all co-flow processing processes and nano-lamination processing processes using the first path switching unit 7. Therefore, the substrate processing apparatus 1 according to the present invention provides options for customer processing processes, and thus helps customers ensure the diversity of processing processes that can be performed and further helps reduce customer equipment setup costs. In this case, the selection of an element to which the second source gas will be supplied from the mixing unit 6 and the injection unit 4 can be performed by a worker. The selection of an element to which the second source gas will be supplied from the mixing unit 6 and the injection unit 4 can be based on a preset process sequence.

[0053] Furthermore, in the case of a processing step based on nano-lamination, the substrate processing apparatus 1 according to the present invention is implemented such that the second source gas is delivered to the injection unit 4 without passing through the mixing unit 6, and thus the second source gas is not supplied to the mixing unit 6. Therefore, in the case of a processing step based on nano-lamination, the substrate processing apparatus 1 according to the present invention can omit the purging process of purging the interior of the mixing unit 6 using purging gas, and thus can reduce the time spent in the processing step to increase the yield of the substrate S processed. This will be described in detail below.

[0054] Firstly, in the comparative example where all the first and second source gases pass through the mixing unit 6 in the nano-lamination-based processing procedure, residual first source gas occurs in the mixing unit 6 when the first source gas is conveyed to the injection unit 4 through the mixing unit 6. Therefore, in the comparative example, the second source gas must be supplied to the mixing unit 6 after the purging process to prevent the first and second source gases from mixing with each other. Therefore, in the comparative example, the processing time using the first and second source gases may inevitably be delayed by the purging process time in the mixing unit 6.

[0055] On the other hand, in the case of a processing procedure based on nano-lamination, the substrate processing apparatus 1 according to the present invention is implemented such that the second source gas is delivered to the injection unit 4 without passing through the mixing unit 6, and thus the purging process on the mixing unit 6 is not required. Therefore, compared with the comparative example, the substrate processing apparatus 1 according to the present invention can shorten the processing time by reducing the time spent on the purging process on the mixing unit 6. Moreover, the equipment for performing the purging process on the mixing unit 6 can be omitted, and therefore the substrate processing apparatus 1 according to the present invention can help reduce construction costs and process costs.

[0056] The first path conversion unit 7 may be installed at the first connection point 71a where the first connection line 71 is connected to the second supply line 521. The first connection line 71 connects the second supply line 521 to at least one of the first supply line 511 and the mixing unit 6.

[0057] As shown in Figure 6, one side of the first connecting line 71 can be connected to the second supply line 521 at the first connection point 71a, and the other side of the first connecting line 71 can be connected to the first supply line 511 between the first source supply unit 51 and the mixing unit 6. In this case, when performing a processing process based on a co-flow process, the flow path of the second source gas can be changed by the first path changing unit 7, and therefore the second source gas can flow along the second supply line 521, the first connecting line 71, and the first supply line 511 and can be supplied to the mixing unit 6.

[0058] As shown in Figure 7, one side of the first connecting line 71 can be connected to the second supply line 521 at the first connection point 71a, and the other side of the first connecting line 71 can be connected to the mixing unit 6. In this case, when the processing is carried out based on the co-flow process, the flow path of the second source gas can be changed by the first path changing unit 7, and therefore the second source gas can flow along the first connecting line 71 and can be directly supplied to the mixing unit 6.

[0059] Although not shown in the figure, one side of the first connecting line 71 can be connected to the second supply line 521 at the first connection point 71a, and the other side of the first connecting line 71 can branch and be connected to all the first supply lines 511 and the mixing unit 6. The first connecting line 71 can be implemented as a hose, flow tube, conduit, etc. The first connecting line 71 can be implemented as a hole forming a specific structure.

[0060] The first path conversion unit 7 may include a first connecting valve 72 and a first supply valve 73.

[0061] The first connection valve 72 selectively opens or closes the first connection line 71. The first connection valve 72 can be installed in the first connection line 71 located between one side and the other side of the first connection line 71.

[0062] The first supply valve 73 selectively opens or closes the second supply line 521. The first supply valve 73 can be installed in the second supply line 521 located between the first connection point 71a and the injection unit 4.

[0063] The first path changing unit 7 can use the first connecting valve 72 and the first supply valve 73 to change the flow path of the second source gas.

[0064] For example, when the injection unit 4 injects a mixture of multiple source gases toward the substrate S for processing, the first path changing unit 7 can control the first supply valve 73 to close the second supply line 521 and control the first connection valve 72 to open the first connection line 71. Therefore, the first path changing unit 7 can change the flow path of the second source gas so that the second source gas is supplied to the mixing unit 6.

[0065] For example, when the injection unit 4 sequentially injects multiple source gases toward the substrate S for processing, the first path changing unit 7 can control the first connection valve 72 to close the first connection line 71 and control the first supply valve 73 to open the second supply line 521. Therefore, the first path changing unit 7 can change the flow path of the second source gas, allowing the second source gas to be supplied to the injection unit 4. In this case, while maintaining the state where the first path changing unit 7 controls the first connection valve 72 to close the first connection line 71, the first path changing unit 7 can control the first supply valve 73 to open or close the second supply line 521 during the processing sequence. For example, only during the period when the second source gas is injected toward the substrate S in the processing sequence, the first path changing unit 7 can control the first supply valve 73 to open the second supply line 521. During other periods in the processing sequence besides the period when the second source gas is injected toward the substrate S, the first path changing unit 7 can control the first supply valve 73 to close the second supply line 521.

[0066] Therefore, the first mixing valve 61 and the second mixing valve 62 can be installed in the first supply line 511.

[0067] The first mixing valve 61 is disposed between the first source supply unit 51 and the mixing unit 6. That is, the first mixing valve 61 can be disposed on the air inlet side of the mixing unit 6. The first mixing valve 61 can open or close the first supply line 511 on the air inlet side of the mixing unit 6, and thus can change whether the first source gas is supplied to the mixing unit 6.

[0068] The second mixing valve 62 is disposed between the mixing unit 6 and the injection unit 4. That is, the second mixing valve 62 can be disposed on the outlet side of the mixing unit 6. The second mixing valve 62 can open or close the first supply line 511 on the outlet side of the mixing unit 6, and thus can change whether the first source gas or the mixture of the first source gas and the second source gas is supplied to the injection unit 4.

[0069] When the substrate processing apparatus 1 according to the present invention performs a processing process based on a co-flow process, the first mixing valve 61 and the second mixing valve 62 can be operated as follows.

[0070] First, until the supply of the first source gas and the second source gas to the mixing unit 6 is complete, the first mixing valve 61 will open the first supply line 511 and the second mixing valve 62 will close the first supply line 511. In this case, the first supply valve 73 will close the second supply line 521 and the first connection valve 72 will open the first connection line 71. Therefore, the first source gas and the second source gas can be supplied to the mixing unit 6.

[0071] Subsequently, upon completion of the supply of the first source gas and the second source gas to the mixing unit 6, the first mixing valve 61 opens the first supply line 511 and the first connecting valve 72 closes the first connecting line 71. In this state, the second mixing valve 62 keeps the first supply line 511 closed, and the first supply valve 73 keeps the second supply line 521 closed. In this state, the process of mixing the first source gas and the second source gas to generate a mixed gas can be performed in the mixing unit 6.

[0072] Subsequently, when the first source gas and the second source gas mix to produce a mixed gas, the second mixing valve 62 opens the first supply line 511. In this case, when the first mixing valve 61 keeps the first supply line 511 closed and the first connecting valve 72 keeps the first connecting line 71 closed, the first supply valve 73 keeps the second supply line 521 closed. The mixed gas can flow along the first supply line 511 and can be supplied to the injection unit 4.

[0073] As described above, the substrate processing apparatus 1 according to the present invention can improve the mixing rate of multiple source gases by utilizing the first mixing valve 61 and the second mixing valve 62. Therefore, the substrate processing apparatus 1 according to the present invention can further improve the ease of operation in controlling the mixing composition ratio of multiple source gases and can further reduce the deviation of the mixing composition ratio of multiple source gases, thereby further improving the film quality of the thin film formed using multiple source gases. Moreover, the substrate processing apparatus 1 according to the present invention can increase the pressure of the mixed gas inside the mixing unit 6 by utilizing the first mixing valve 61 and the second mixing valve 62. Therefore, the substrate processing apparatus 1 according to the present invention can spray the mixed gas toward the substrate S through the spraying unit 4 with a stronger spraying pressure, and thus can further improve the quality of the substrate undergoing the processing.

[0074] Therefore, based on the customer's choice, the substrate processing apparatus 1 according to the present invention can be operated to perform only a co-flow process, or can be operated to perform only a nano-lamination process. Furthermore, based on the customer's choice, the substrate processing apparatus 1 according to the present invention can be operated to sequentially perform a co-flow process and a nano-lamination process. In this case, the spraying unit 4 can spray a mixed gas containing multiple source gases toward the substrate S to perform a first processing process, and then sequentially spray multiple source gases toward the substrate S to perform a second processing process. That is, the spraying unit 4 can sequentially spray a mixed gas, a first source gas, and a second source gas toward the substrate S. As described above, when performing all the first and second processing processes, the substrate processing apparatus 1 according to the present invention may further include an intermediate purging unit 63.

[0075] An intermediate purging unit 63 is connected to the mixing unit 6. To perform a second processing step after the first processing step and before only the first source gas is supplied to the mixing unit 6, purging gas inside the mixing unit 6 can be supplied to the mixing unit 6. Therefore, the intermediate purging unit 63 can remove the mixed gas remaining in the mixing unit 6 from the mixing unit 6. Subsequently, the first source gas can be supplied to the mixing unit 6. Therefore, the substrate processing apparatus 1 according to the invention can prevent the mixed gas from being ejected while the mixed gas is mixed with the first source gas during the second processing step after the first processing step. Therefore, even when the processing step based on a co-flow process and the processing step based on a nano-lamination process are performed sequentially, the substrate processing apparatus 1 according to the invention is still implemented to improve the quality of the thin film formed on the substrate S.

[0076] Referring to Figures 5 to 7, the substrate processing apparatus 1 according to the present invention may include a reactant supply unit 8.

[0077] The reactant supply unit 8 supplies reactant gas to the injection unit 4. The reactant supply unit 8 may be included in the gas supply unit 40. The reactant supply unit 8 can supply reactant gas capable of reacting with at least one of the source gases supplied by the source supply unit 5. The injection unit 4 can spray the reactant gas supplied from the reactant supply unit 8 toward the substrate support unit 3. The reactant supply unit 8 may include a storage tank (not shown) for storing the reactant gas and a flow rate control valve (not shown) for controlling the amount of reactant gas discharged from the storage tank and supplied to the injection unit 4. The reactant supply unit 8 may be connected to at least one of a first gas flow path 4a and a second gas flow path 4b. The reactant supply unit 8 may be connected to a third gas flow path (not shown) included in the injection unit 4. The reactant supply unit 8 may be connected to the injection unit 4 via a supply line 81. The supply line 81 may be implemented as a hose, a flow tube, a tube body, etc. The supply line 81 may be implemented as a hole forming a specific structure.

[0078] Although not shown in the figures, the substrate processing apparatus 1 according to the present invention may include a purging supply unit. The purging supply unit supplies purging gas to the injection unit 4. The purging supply unit may be included in a gas supply unit 40. The injection unit 4 may inject the purging gas supplied from the purging supply unit toward the substrate support unit 3. The purging supply unit may be connected to at least one of a first gas flow path 4a and a second gas flow path 4b. The purging supply unit may be connected to a purging gas flow path (not shown) included in the injection unit 4. The purging supply unit may be connected to at least one of a first supply line 511 and a second supply line 521. The purging supply unit may be connected to the injection unit 4 via spaced-apart supply lines.

[0079] Referring to Figures 5 to 8, the substrate processing apparatus 1 according to the present invention can be implemented to perform a processing process using three or more source gases. For example, in the case where the substrate processing apparatus 1 according to the present invention performs a processing process using three source gases, the source supply unit 5 may further include a third source supply unit 53 (shown in Figure 8).

[0080] The third source supply unit 53 is used to supply a third source gas. The third source supply unit 53 can be connected to the injection unit 4 via a third supply line 531. In this case, the injection unit 4 may include a third gas flow path (not shown) for injecting the third source gas. The third source supply unit 53 can be connected to at least one of the first gas flow path 4a and the second gas flow path 4b via the third supply line 531. The third supply line 531 can be implemented as a hose, flow tube, pipe body, etc. The third supply line 531 can be implemented as a hole forming a specific structure.

[0081] Furthermore, the substrate processing apparatus 1 according to the present invention may further include a second path transformation unit 9 (shown in FIG8).

[0082] The second path changing unit 9 changes the flow path of the third source gas. The second path changing unit 9 can change the flow path of the third source gas so that the third source gas supplied from the third source supply unit 53 is supplied to at least one element selected from the mixing unit 6 and the injection unit 4.

[0083] When the second path changing unit 9 changes the flow path of the third source gas so that the third source gas is supplied to the mixing unit 6, the third source gas can be supplied to the injection unit 4 through the mixing unit 6. Therefore, the injection unit 4 can inject a mixed gas, which is additionally mixed with at least one of the first source gas and the second source gas, toward the substrate S. In this case, the substrate processing apparatus 1 according to the present invention can perform a processing process based on nano-lamination, and thus a thin film layer formed by the mixed gas can be deposited on the substrate S.

[0084] When the second path changing unit 9 changes the flow path of the third source gas so that the third source gas is supplied to the injection unit 4, the third source gas can be supplied to the injection unit 4 without passing through the mixing unit 6. Therefore, the injection unit 4 can individually inject the first source gas, the second source gas, and the third source gas toward the substrate S without mixing with each other. In this case, the substrate processing apparatus 1 according to the present invention can perform a processing process based on nano-lamination, and thus can sequentially deposit a thin film layer formed by the first source gas, a thin film layer formed by the second source gas, and a thin film layer formed by the third source gas on the substrate S.

[0085] The second path conversion unit 9 may be installed at the second connection point 91a where the second connection line 91 is connected to the third supply line 531. The second connection line 91 connects the third supply line 531 to at least one of the first supply line 511 and the mixing unit 6.

[0086] As shown in Figure 8, one side of the second connecting line 91 can be connected to the third supply line 531 at the second connection point 91a, and the other side of the second connecting line 91 can be connected to the first supply line 511 between the first source supply unit 51 and the mixing unit 6. In this case, when performing a processing process based on a co-flow process, the flow path of the third source gas can be changed by the second path changing unit 9, and therefore the third source gas can flow along the third supply line 531, the second connecting line 91, and the first supply line 511 and can be supplied to the mixing unit 6.

[0087] Although not shown in the figure, one side of the second connecting line 91 can be connected to the third supply line 531 at the second connection point 91a, and the other side of the second connecting line 91 can be directly connected to the mixing unit 6. In this case, when performing a processing process based on a co-flow process, the flow path of the third source gas can be changed by the second path changing unit 9, and therefore the third source gas can flow along the third supply line 531 and the second connecting line 91 and can be directly supplied to the mixing unit 6.

[0088] Although not shown in the figure, one side of the second connecting line 91 can be connected to the third supply line 531 at the second connection point 91a, and the other side of the second connecting line 91 can branch and connect to all the first supply lines 511 and the mixing unit 6. The second connecting line 91 can be implemented as a hose, flow tube, conduit, etc. The second connecting line 91 can be implemented as a hole forming a specific structure.

[0089] Although not shown in the figure, the second path conversion unit 9 may include a second connection valve that selectively opens or closes the second connection line 91 and a second supply valve that selectively opens or closes the third supply line 531. The second connection valve and the second supply valve differ from each of the first connection valve 72 and the first supply valve 73 only in configuration, and therefore their detailed description is omitted.

[0090] Furthermore, when the substrate processing apparatus 1 according to the present invention uses N (where N is an integer greater than 3) source gases for processing, the substrate processing apparatus 1 according to the present invention can be implemented to include N source supply units, N supply lines, N path conversion units, and N connection lines.

[0091] Hereinafter, an embodiment of a method for manufacturing a metal-oxide-semiconductor according to the present invention will be described in detail with reference to the accompanying drawings. In describing an embodiment of the invention, where any structure is described as forming another structure, such description should be interpreted to include cases where a third structure is disposed between these structures and cases where these structures are in contact with each other.

[0092] Referring to Figures 2 to 9, the method for manufacturing a metal-oxide-semiconductor according to the present invention is used to manufacture a metal-oxide-semiconductor 200 on a substrate S by forming an oxide layer 230. The substrate S may be a silicon substrate, a glass substrate, a metal substrate, etc. The method for manufacturing a metal-oxide-semiconductor according to the present invention can be performed using the substrate processing apparatus 1 described above.

[0093] Referring to Figures 2 to 10, a metal-oxide-semiconductor 200 can be manufactured according to the method of manufacturing a metal-oxide-semiconductor according to the present invention, comprising a thin film 210 formed on a substrate S as shown in Figure 9 and an oxide layer 230 formed on an exposed surface 211 of the thin film 210. The exposed surface 211 is the surface of the thin film 210 exposed by patterning of the thin film 210. In Figure 9, the exposed surface 211 is illustrated corresponding to a side surface of the thin film 210, but the present invention is not limited thereto, and the exposed surface 211 may correspond to another surface contained in the thin film 210. The exposed surface 211 may be exposed by through-holes 220 formed in the thin film 210. When the metal-oxide-semiconductor 200 is a three-dimensional transistor, the thin film 210 may be a gate insulating layer. In this case, the exposed surface 211 may correspond to a side surface of the gate insulating layer. Thin film layers 240 may be disposed on both sides of the thin film 210. When the metal-oxide semiconductor 200 is a three-dimensional transistor, the thin film layer 240 can be implemented as a structure in which multiple oxide films and multiple word lines (WL) are stacked in an alternating manner. The thin film layer 240 can be formed on the substrate S, and patterned holes can be formed in the thin film layer 240 through an etching process. Subsequently, a thin film 210 can be formed on the side surface of the thin film layer 240 exposed through the patterned holes. The oxide layer 230 can be implemented as an indium gallium zinc oxide (IGZO) oxide layer containing indium (In), gallium (Ga), zinc (Zn), and oxide (O). The oxide layer 230 can also be implemented as an indium tin gallium oxide (ITGO) oxide layer containing indium (In), tin (Sn), gallium (Ga), and oxide (O).

[0094] The method for manufacturing a metal oxide semiconductor according to the present invention may include step a) (step S10), step b) (step S20) and step c) (step S30).

[0095] Step a) (Step S10) can be performed by preparing a substrate S in which the exposed surface 211 of the thin film 210 is patterned. Step a) (Step S10) can be performed by loading the substrate S in which the exposed surface 211 of the thin film 210 is patterned onto the substrate support unit 3. The substrate S can be loaded onto the substrate support unit 3 with the through hole 220 formed in the thin film 210. In this case, the exposed surface 211 can correspond to the side surface of the thin film 210.

[0096] Step b) (Step S20) can be performed by forming a first channel layer 231 on the exposed surface 211 using at least one of indium oxide (InO), zinc oxide (ZnO), and tin oxide (SnO). Step b) (Step S20) can be performed by sequentially injecting a source gas containing at least one of indium, zinc, and tin, and a reaction gas containing oxides using the injection unit 4. Therefore, the first channel layer 231 can be formed on the exposed surface 211 through an atomic layer deposition (ALD) process. The source gas containing at least one of indium, zinc, and tin can be injected through a first gas flow path 4a. In this case, the first gas flow path 4a can be connected to the source supply unit 5. The reaction gas containing oxides can be injected through a second gas flow path 4b. In this case, a third gas flow path can be connected to the reactant supply unit 8.

[0097] c) Step S30 can be performed by forming a second channel layer 232 using gallium oxide (GaO). Step S30 can also be performed by sequentially injecting a source gas containing gallium and a reactant gas containing oxide using the injection unit 4. Therefore, the second channel layer 232 can be formed on the first channel layer 231 using an ALD process. The source gas containing gallium can be injected through a first gas flow path 4a. In this case, the first gas flow path 4a can be connected to the source supply unit 5. The reactant gas containing oxide can be injected through a second gas flow path 4b. In this case, the second gas flow path 4b can be connected to the reactant supply unit 8. The reactant gas containing oxide can be injected through a third gas flow path. In this case, the third gas flow path can be connected to the reactant supply unit 8.

[0098] As described above, the method for manufacturing a metal-oxide-semiconductor according to the present invention can be implemented by first forming a first channel layer 231 on the exposed surface 211 using at least one of indium, zinc, and tin, and then subsequently forming a second channel layer 232 using gallium. Therefore, the method for manufacturing a metal-oxide-semiconductor according to the present invention achieves the following advantages.

[0099] First, the method for manufacturing a metal-oxide-semiconductor according to the present invention can initially form a first channel layer 231 using at least one of indium, zinc, and tin, which have higher reactivity than gallium and the hydroxyl groups (-OH) of the thin film 210. This prevents the step coverage from decreasing due to a high activation barrier that hinders the initial self-limiting chemical adsorption process between gallium and the hydroxyl groups (-OH) of the thin film 210. In this case, the method for manufacturing a metal-oxide-semiconductor according to the present invention can reduce the activation barrier between the thin film 210 and the first channel layer 231, and thus promote the surface nucleus growth of the precursor contained in the first channel layer 231. Therefore, the method for manufacturing a metal-oxide-semiconductor according to the present invention can improve the step coverage of the first channel layer 231 formed on the exposed surface 211, and further improve the step coverage of the second channel layer 232 formed on the first channel layer 231, thereby improving the film quality of the oxide layer 230.

[0100] Secondly, the method for manufacturing a metal-oxide-semiconductor according to the present invention can be implemented to independently form the first channel layer 231 and the second channel layer 232, thereby improving the ease and accuracy of controlling the composition ratio between the precursors of the first channel layer 231 and the second channel layer 232. Therefore, the method for manufacturing a metal-oxide-semiconductor according to the present invention can improve responsiveness to variations in the type and specifications of the metal-oxide-semiconductor 200 and improve the versatility of the oxide layer 230 that can be used to form various metal-oxide-semiconductor 200s. Furthermore, surface reactivity can be improved through control of the composition ratio between the precursors of the first channel layer 231 and the second channel layer 232, and therefore, the method for manufacturing a metal-oxide-semiconductor according to the present invention can further improve the step coverage of the oxide layer 230.

[0101] Third, the method for manufacturing a metal-oxide-semiconductor according to the present invention can be implemented to form a first channel layer 231 comprising indium oxide and then to form a second channel layer 232 comprising gallium oxide. The indium in the first channel layer 231 can help improve the deposition uniformity of gallium in the second channel layer 232, and therefore, the method for manufacturing a metal-oxide-semiconductor according to the present invention can further improve the step coverage of the second channel layer 232, thereby further improving the film quality of the oxide layer 230. Therefore, the method for manufacturing a metal-oxide-semiconductor according to the present invention can manufacture a metal-oxide-semiconductor 200 that ensures good electrical and chemical properties of the oxide layer 230 per cell in a micro-fine pattern device with a high aspect ratio.

[0102] Furthermore, the materials contained in the first channel layer 231 and the materials contained in the second channel layer 232 can be mixed or reacted with each other, and the oxide layer 230 can be implemented as an IGZO oxide layer or an ITGO oxide layer. When the oxide layer 230 is implemented as an IGZO oxide layer, step b) (step S20) can utilize indium oxide and zinc oxide to form the first channel layer 231. When the oxide layer 230 is implemented as an ITGO oxide layer, step b) (step S20) can utilize indium oxide and tin oxide to form the first channel layer 231.

[0103] Furthermore, when the metal oxide semiconductor 200 is a three-dimensional transistor, step b) (step S20) can be performed by forming a first channel layer 231 on the side of the gate insulating layer, and step c) (step S30) can be performed by forming a second channel layer 232 on the side of the first channel layer 231.

[0104] Referring to Figures 2 to 10, the method for manufacturing a metal-oxide-semiconductor according to the present invention may include repeatedly performing step b) (step S20) followed by repeatedly performing step c) (step S30). In this case, the first channel layer 231 may be formed from multiple layers on the exposed surface 211 by repeatedly performing step b) (step S20), and then the second channel layer 232 may be formed from multiple layers on the first channel layer 231 by repeatedly performing step c) (step S30). Step b) (S20) may be repeatedly performed by sequentially performing multiple injections of a source gas containing at least one of indium, zinc, and tin and an injection of a reaction gas containing oxide. Therefore, the first channel layer 231 may be formed from multiple layers through an ALD process. Step c) (step S30) may be repeatedly performed by sequentially performing multiple injections of a source gas containing gallium and an injection of a reaction gas containing oxide. Therefore, the second channel layer 232 may be formed from multiple layers through an ALD process. The steps of repeatedly performing step b) and then repeatedly performing step c) can be repeated until the oxide layer 230 is formed on the exposed surface 211 with a preset thickness.

[0105] Referring to Figures 2 to 11, the method for manufacturing a metal oxide semiconductor according to the present invention may further include step d) (step S40). Step d) (step S40) may be performed by forming a first channel layer 231 using at least one of indium oxide, zinc oxide, and tin oxide. Step d) (step S40) may be performed using an injection unit 4 by sequentially injecting a source gas containing at least one of indium, zinc, and tin and a reactant gas containing oxides. Therefore, the first channel layer 231 may be formed on a second channel layer 232 through an ALD process. The source gas containing at least one of indium, zinc, and tin may be injected through a first gas flow path 4a. In this case, the first gas flow path 4a may be connected to a source supply unit 5. The reactant gas containing oxides may be injected through a second gas flow path 4b. In this case, the second gas flow path 4b may be connected to a reactant supply unit 8. The reactant gas containing oxides may be injected through a third gas flow path. In this case, the third gas flow path may be connected to a reactant supply unit 8. When the metal oxide semiconductor 200 is a three-dimensional transistor, step d) (step S40) can be performed by forming a first channel layer 231 on the side of the second channel layer 232.

[0106] Referring to Figures 2 to 11, the method for manufacturing a metal-oxide semiconductor according to the present invention may further include a step of repeatedly performing step c) after step d) (step S50 shown in Figure 11). Through this step (step S50), the first channel layer 231 and the second channel layer 232 may be formed alternately in the order of first channel layer 231, second channel layer 232, first channel layer 231, second channel layer 232. The step of repeatedly performing step c) after step d) (step S50 shown in Figure 11) may be repeated until the oxide layer 230 is formed on the exposed surface 211 with a predetermined thickness.

[0107] Referring to Figures 2 to 12, the method for manufacturing a metal-oxide-semiconductor according to the present invention may include a step of treating the exposed surface (step S11 shown in Figure 12). This step (step S11) may be performed before step b) (step S20). The method for manufacturing a metal-oxide-semiconductor according to the present invention may be implemented to form a first channel layer 231 on the exposed surface 211 after the treatment on the exposed surface 211, and thus the step coverage of the first channel layer 231 may be further improved. The step of treating the exposed surface (step S11) may be performed by the spraying unit 4.

[0108] The step of treating the exposed surface (step S11) can be performed by treating the exposed surface 211 with plasma using at least one of ozone (O3), hydrogen (H2), and ammonia (NH3). In this case, the spraying unit 4 can use plasma generated by using the second plate 42 and the first plate 41, as well as at least one of ozone (O3), hydrogen (H2), and ammonia (NH3), to treat the exposed surface 211.

[0109] The step of processing the exposed surface (step S11) can be performed on the exposed surface 211 by a heat treatment process in an oxygen (O2) environment. In this case, the spraying unit 4 can provide a processing space 100 with an oxygen environment and a heating unit (not shown) can provide heat, and therefore, the step of processing the exposed surface (S11) can be performed. The heating unit can be installed in at least one of the cover and the substrate support unit 3.

[0110] Referring to Figures 2 to 13, in the method for manufacturing a metal-oxide-semiconductor according to a modified embodiment of the present invention, steps b) (step S20) and c) (step S30) can be implemented as follows.

[0111] b) Step S20 can be performed by forming a first channel layer 231 using at least one of indium zinc oxide (IZO), indium tin oxide (ITO), and zinc tin oxide (ZTO).

[0112] (b) Step (step S20) may include the step of depositing indium zinc oxide (step S21). The step of depositing indium zinc oxide (step S21) may be performed by sequentially performing an indium oxide sub-cycle (ISC) and a zinc oxide sub-cycle (ZSC).

[0113] An indium oxide sub-cycle (ISC) can sequentially inject a source gas containing indium and a reactant gas containing oxide to deposit indium oxide through an ALD process. The indium-containing source gas can be injected through a first gas flow path 4a. In this case, the first gas flow path 4a can be connected to the source supply unit 5. The oxide-containing reactant gas can be injected through a second gas flow path 4b. In this case, the second gas flow path 4b can be connected to the reactant supply unit 8. The oxide-containing reactant gas can be injected through a third gas flow path. In this case, the third gas flow path can be connected to the reactant supply unit 8.

[0114] A zinc oxide subcycle (ZSC) sequentially injects a source gas containing zinc and a reactant gas containing oxides to deposit zinc oxide through an ALD process. An indium oxide subcycle (ISC) sequentially injects a source gas containing zinc and a reactant gas containing oxides multiple times to deposit zinc oxide through an ALD process. The source gas containing zinc can be injected through a first gas flow path 4a. In this case, the first gas flow path 4a can be connected to the source supply unit 5. The reactant gas containing oxides can be injected through a second gas flow path 4b. In this case, the second gas flow path 4b can be connected to the reactant supply unit 8. The reactant gas containing oxides can be injected through a third gas flow path. In this case, the third gas flow path can be connected to the reactant supply unit 8.

[0115] The step of depositing indium zinc oxide by sequentially performing indium oxide sub-cycles (ISC) and zinc oxide sub-cycles (ZSC) (step S21) can sequentially deposit indium oxide and zinc oxide on the exposed surface 211 to form indium zinc oxide (IZO) on the exposed surface 211. Indium zinc oxide (IZO) can constitute all or part of the first channel layer 231. The step of depositing indium zinc oxide (step S21) can be performed by sequentially performing indium oxide sub-cycles (ISC) and zinc oxide sub-cycles (ZSC) multiple times.

[0116] (b) Step (step S20) may include the step of depositing indium tin oxide (step S22). The step of depositing indium tin oxide (step S22) may be performed by sequentially performing an indium oxide sub-cycle (ISC) and a tin oxide sub-cycle (TSC). The indium oxide sub-cycle (ISC) is implemented to substantially match the description of the step of depositing indium zinc oxide (step S21), and therefore its detailed description is omitted.

[0117] The tin oxide subcycle (TSC) sequentially injects a source gas containing tin and a reactant gas containing oxides to deposit tin oxide in an ALD process. The tin oxide subcycle (TSC) can sequentially inject the source gas containing tin and the reactant gas containing oxides multiple times to deposit tin oxide through the ALD process. The source gas containing tin can be injected through a first gas flow path 4a. In this case, the first gas flow path 4a can be connected to the source supply unit 5. The reactant gas containing oxides can be injected through a second gas flow path 4b. The second gas flow path 4b can be connected to the reactant supply unit 8. The reactant gas containing oxides can be injected through a third gas flow path. In this case, the third gas flow path can be connected to the reactant supply unit 8.

[0118] The step of depositing indium tin oxide (ITO) by sequentially performing indium oxide sub-cycles (ISC) and tin oxide sub-cycles (TSC) (step S22) can sequentially deposit indium oxide and tin oxide on the exposed surface 211 to form indium tin oxide (ITO) on the exposed surface 211. Indium tin oxide (ITO) can constitute all or part of the first channel layer 231. The step of depositing indium tin oxide (step S22) can be performed by sequentially performing multiple indium oxide sub-cycles (ISC) and tin oxide sub-cycles (TSC).

[0119] (b) Step (step S20) may include the step of depositing zinc tin oxide (step S23). The step of depositing zinc tin oxide (step S23) may be performed by sequentially performing a zinc oxide sub-cycle (ZSC) and a tin oxide sub-cycle (TSC). The zinc oxide sub-cycle (ZSC) is implemented to substantially match the description of the step of depositing indium zinc oxide (step S21) and the tin oxide sub-cycle (TSC) is implemented to substantially match the description of the step of depositing indium tin oxide (step S22), and therefore detailed descriptions of the zinc oxide sub-cycle and the tin oxide cycle are omitted. The step of depositing zinc tin oxide by sequentially performing zinc oxide sub-cycle (ZSC) and tin oxide cycle (TSC) (step S23) may sequentially deposit zinc oxide and tin oxide on the exposed surface 211 to form zinc tin oxide (ZTO) on the exposed surface 211. Zinc tin oxide (ZTO) may constitute all or part of the first channel layer 231. The step of depositing zinc tin oxide (step S23) can be performed by sequentially performing multiple zinc oxide sub-cycles (ZSC) and tin oxide sub-cycles (TSC).

[0120] In addition, step b) (step S20) may include at least one of the steps of depositing indium zinc oxide (step S21), depositing indium tin oxide (step S22), and depositing zinc tin oxide (step S23).

[0121] c) Step S30 can be performed by forming a second channel layer 232 using at least one of indium gallium oxide (IGO), gallium tin oxide (GTO), and gallium zinc oxide (GZO).

[0122] c) Step (step S30) may include the step of depositing indium gallium oxide (step S31). The step of depositing indium gallium oxide (step S31) may be performed by sequentially performing an indium oxide sub-cycle (ISC) and a gallium oxide sub-cycle (GSC). The indium oxide sub-cycle (ISC) is implemented to substantially correspond to the description of the step of depositing indium zinc oxide (step S21) in step b) (step S20), and therefore its detailed description is omitted.

[0123] A gallium oxide subcycle (GSC) can sequentially inject a source gas containing gallium and a reactant gas containing oxide to deposit gallium oxide through an ALD process. The gallium oxide subcycle (GSC) can sequentially inject the source gas containing gallium and the reactant gas containing oxide multiple times to deposit gallium oxide through an ALD process. The source gas containing gallium can be injected through a first gas flow path 4a. In this case, the first gas flow path 4a can be connected to the source supply unit 5. The reactant gas containing oxide can be injected through a second gas flow path 4b. In this case, the second gas flow path 4b can be connected to the reactant supply unit 8. The reactant gas containing oxide can be injected through a third gas flow path. In this case, the third gas flow path can be connected to the reactant supply unit 8.

[0124] The step of depositing indium gallium oxide (IGO) by sequentially performing indium oxide sub-cycles (ISC) and gallium oxide sub-cycles (GSC) (step S31) can sequentially deposit indium oxide and gallium oxide on the first channel layer 231 to form indium gallium oxide (IGO) on the first channel layer 231. IGO can constitute all or part of the second channel layers 232. The step of depositing indium gallium oxide (step S31) can be performed by sequentially performing multiple indium oxide sub-cycles (ISC) and gallium oxide sub-cycles (GSC).

[0125] c) Step (step S30) may include a step of depositing gallium tin oxide (step S32). The step of depositing gallium tin oxide (step S32) may be performed by sequentially performing a gallium oxide sub-cycle (GSC) and a tin oxide sub-cycle (TSC). The gallium oxide sub-cycle (GSC) is implemented in a manner substantially similar to the description of the step of depositing indium gallium oxide (step S31), and the tin oxide sub-cycle (TSC) is implemented in a manner substantially similar to the description of the step of depositing indium tin oxide in step b) (step S20) (step S22), and therefore detailed descriptions of the gallium oxide sub-cycle and the tin oxide cycle are omitted.

[0126] The step of depositing gallium tin oxide by sequentially performing gallium oxide sub-cycles (GSC) and tin oxide sub-cycles (TSC) (step S32) can sequentially deposit gallium oxide and tin oxide on the first channel layer 231 to form gallium tin oxide (GTO) on the first channel layer 231. Gallium tin oxide (GTO) can constitute all or part of the second channel layer 232. The step of depositing gallium tin oxide (step S32) can be performed by sequentially performing gallium oxide sub-cycles (GSC) and tin oxide sub-cycles (TSC) multiple times.

[0127] c) Step (step S30) may include the step of depositing gallium zinc oxide (step S33). The step of depositing gallium zinc oxide (step S33) may be performed by sequentially performing a gallium oxide sub-cycle (GSC) and a zinc oxide sub-cycle (ZSC). The gallium oxide sub-cycle (GSC) is implemented to substantially match the description of the step of depositing indium gallium oxide (step S31) and the zinc oxide sub-cycle (ZSC) is implemented to substantially match the description of the step of depositing indium zinc oxide (step S21) in step b) (step S20), and therefore detailed descriptions of the gallium oxide sub-cycle and the zinc oxide sub-cycle are omitted.

[0128] The step of depositing gallium zinc oxide by sequentially performing gallium oxide sub-cycles (GSC) and zinc oxide sub-cycles (ZSC) (step S33) can sequentially deposit gallium oxide and zinc oxide on the first channel layer 231 to form gallium zinc oxide (GZO) on the first channel layer 231. Gallium zinc oxide (GZO) can constitute all or part of the second channel layer 232. The step of depositing gallium zinc oxide (step S33) can be performed by sequentially performing gallium oxide sub-cycles (GSC) and zinc oxide sub-cycles (ZSC) multiple times.

[0129] In addition, step c) (step S30) may include at least one of the steps of depositing indium gallium oxide (step S31), depositing gallium tin oxide (step S32), and depositing gallium zinc oxide (step S33).

[0130] Referring to Figures 2 to 13, a method for manufacturing a metal-oxide-semiconductor according to a modified embodiment of the present invention may include repeatedly performing step b) (step S20) followed by repeatedly performing step c) (step S30). In this case, the first channel layer 231 may be formed by repeatedly performing step b) (step S20) from a plurality of layers on the exposed surface 211, and then the second channel layer 232 may be formed by repeatedly performing step c) (step S30) from a plurality of layers on the first channel layer 231. The step of repeatedly performing step b) followed by repeatedly performing step c) may be repeated until the oxide layer 230 is formed on the exposed surface 211 with a predetermined thickness.

[0131] Referring to Figures 2 to 14, the method for manufacturing a metal-oxide-semiconductor according to a modified embodiment of the present invention may further include step d) (step S40).

[0132] d) Step (step S40) can be performed by forming a first channel layer 231 using at least one of indium zinc oxide (IZO), indium tin oxide (ITO) and zinc tin oxide (ZTO).

[0133] d) Step (step S40) may include the step of depositing indium zinc oxide (IZO) (step S41). The step of depositing IZO (step S41) may be performed by sequentially performing an indium oxide sub-cycle (ISC) and a zinc oxide sub-cycle (ZSC). The step of depositing IZO by sequentially performing an indium oxide sub-cycle (ISC) and a zinc oxide sub-cycle (ZSC) (step S41) may involve sequentially depositing indium oxide and zinc oxide on the second channel layer 232 to form indium zinc oxide (IZO) on the second channel layer 232. Indium zinc oxide (IZO) may constitute all or a portion of the first channel layer 231. The step of depositing IZO (step S41) may be performed by sequentially performing multiple indium oxide sub-cycles (ISC) and zinc oxide sub-cycles (ZSC).

[0134] d) Step (step S40) may include a step of depositing indium tin oxide (ITO) (step S42). The step of depositing ITO (step S42) may be performed by sequentially performing an indium oxide sub-cycle (ISC) and a tin oxide sub-cycle (TSC). The step of depositing ITO by sequentially performing an indium oxide sub-cycle (ISC) and a tin oxide sub-cycle (TSC) (step S42) may sequentially deposit indium oxide and tin oxide on the second channel layer 232 to form indium tin oxide (ITO) on the second channel layer 232. Indium tin oxide (ITO) may constitute all or a portion of the first channel layer 231. The step of depositing ITO (step S42) may be performed by sequentially performing multiple indium oxide sub-cycles (ISC) and tin oxide sub-cycles (TSC).

[0135] d) Step (step S40) may include a step of depositing zinc tin oxide (step S43). The step of depositing zinc tin oxide (step S43) may be performed by sequentially performing zinc oxide sub-cycles (ZSC) and tin oxide sub-cycles (TSC). The step of depositing zinc tin oxide by sequentially performing zinc oxide sub-cycles (ZSC) and tin oxide sub-cycles (TSC) (step S43) may sequentially deposit zinc oxide and tin oxide on the second channel layer 232 to form zinc tin oxide (ZTO) on the second channel layer 232. Zinc tin oxide (ZTO) may constitute all or a portion of the first channel layer 231. The step of depositing zinc tin oxide (step S43) may be performed by sequentially performing multiple zinc oxide sub-cycles (ZSC) and tin oxide sub-cycles (TSC).

[0136] In addition, step d) (step S40) may include at least one of the steps of depositing indium zinc oxide (S41), depositing indium tin oxide (S42), and depositing zinc tin oxide (S43).

[0137] Referring to Figures 2 to 14, the method for manufacturing a metal-oxide-semiconductor according to a modified embodiment of the present invention may further include a step of repeatedly performing step c) after step d) (step S50 shown in Figure 11). Through this step (step S50), the first channel layer 231 and the second channel layer 232 may be formed alternately in the order of first channel layer 231, second channel layer 232, first channel layer 231, second channel layer 232. The step of repeatedly performing step c) after step d) (step S50) may be repeated until the oxide layer 230 is formed on the exposed surface 211 with a predetermined thickness.

[0138] The present invention described above is not limited to the embodiments and accompanying drawings, and those skilled in the art will clearly understand that various modifications, variations, and substitutions are possible without departing from the scope and spirit of the invention.

[0139] S:Substrate S10~S50: Steps 1: Substrate processing equipment 2: Cavity 3: Substrate support unit 4: Injection Unit 4a: First gas flow path 4b: Second gas flow path 10: Substrate processing equipment 11: Injection Unit 12: First Supply Unit 13: Second Supply Unit 40: Gas supply unit 41: First board 411: First pore 412: Second pore 413:Protrusion 42: Second board 421: Opening 422: First Opening 423: Second opening 43: Buffer space 5: Source Supply Unit 51: Primary Source Supply Unit 511: First Supply Line 52: Second-source supply unit 521: Second Supply Line 53: Third-source supply unit 531: Third Supply Line 6: Hybrid Unit 61: First mixing valve 62: Second mixing valve 63: Intermediate blow-off unit 7: First path transformation unit 71: First connecting line 71a: First connection point 72: First connecting valve 73: First supply valve 8: Reactant Supply Unit 81: Supply Line 9: Second path transformation unit 91: Second connecting line 91a: Second connection point 100: Processing space 200: Metal Oxide Semiconductor 210:Film 211: Exposed Surface 220: Through hole 230: Oxide layer 231: First Channel Layer 232: Second Channel Layer 240: Thin film layer

Claims

1. A substrate processing apparatus, comprising: a cavity; a substrate support unit disposed in the cavity; a spraying unit disposed above the substrate support unit; a first source supply unit for supplying a first source gas; a second source supply unit for supplying a second source gas; a first supply line connecting the first source supply unit and the spraying unit; a second supply line connecting the second source supply unit and the spraying unit; a mixing unit installed in the first supply line and disposed between the first source supply unit and the spraying unit; a first connection line connecting the second supply line and at least one of the first supply line and the mixing unit; and a first path changing unit installed on the first connection line connected to a first connection point of the second supply line, wherein the first path changing unit changes a flow path of the second source gas, such that the second source gas supplied from the second source supply unit is supplied to one selected from the mixing unit and the spraying unit.

2. The substrate processing apparatus of claim 1, wherein, in the case where the spraying unit sprays a mixed gas, formed by mixing multiple source gases together, toward the substrate to perform a processing process, the first path changing unit changes the flow path of the second source gas so that the second source gas is supplied to the mixing unit.

3. The substrate processing apparatus of claim 1, wherein, in the case where the spraying unit sequentially sprays a plurality of source gases toward the substrate to perform a processing process, the first path changing unit changes the flow path of the second source gas so that the second source gas is supplied to the spraying unit.

4. The substrate processing apparatus according to any one of claims 1 to 3, wherein the first path switching unit comprises: a first connection valve for selectively opening or closing the first connection line; and a first supply valve for selectively opening or closing the second supply line.

5. The substrate processing apparatus as claimed in claim 1, further comprising: a first mixing valve installed in the first supply line and disposed between the first source supply unit and the mixing unit; and a second mixing valve installed in the first supply line and disposed between the mixing unit and the spraying unit.

6. The substrate processing apparatus of claim 1, comprising an intermediate purging unit connected to the mixing unit, wherein the injection unit injects a mixed gas, formed by mixing a plurality of source gases together, toward the substrate for a first processing process, and then sequentially injects the plurality of source gases toward the substrate for a second processing process, and the intermediate purging unit supplies a purging gas, which purges one of the purging gases from the interior of the mixing unit, to the mixing unit after the first processing process and before only the first source gas is supplied to the mixing unit for the second processing process.

7. The substrate processing apparatus of claim 1, further comprising: a third source supply unit for supplying a third source gas; a third supply line connecting the third source supply unit and the injection unit; a second connection line connecting the third supply line and at least one of the first supply line and the mixing unit; and a second path changing unit installed at a second connection point of the second connection line connected to the third supply line, wherein the second path changing unit changes a flow path of the third source gas so that the third source gas supplied from the third source supply unit is supplied to one selected from the mixing unit and the injection unit.

8. The substrate processing apparatus as claimed in claim 1 further includes a reactant supply unit for supplying a reactant gas to the spraying unit.

9. A method for manufacturing a metal oxide semiconductor having an oxide layer formed on an exposed surface of a thin film, the method comprising: step a) preparing a substrate with a patterned exposed surface of the thin film; step b) forming a first channel layer on the exposed surface using at least one of indium oxide (InO), zinc oxide (ZnO), and tin oxide (SnO); and step c) forming a second channel layer using gallium oxide (GaO).

10. The method for manufacturing a metal-oxide-semiconductor as claimed in claim 9 further includes a step of repeatedly performing step c) after repeatedly performing step b).

11. The method for manufacturing a metal oxide semiconductor as claimed in claim 9 further includes step d) of forming the first channel layer on the second channel layer using at least one of indium oxide, zinc oxide, and tin oxide.

12. The method for manufacturing a metal-oxide-semiconductor as claimed in claim 11 further includes a step of repeatedly performing step c) after performing step d).

13. The method for manufacturing a metal oxide semiconductor as claimed in claim 9 further includes a step of treating the exposed surface prior to step b).

14. The method of manufacturing a metal oxide semiconductor as claimed in claim 13, wherein the step of treating the exposed surface is performed using a plasma of at least one of ozone (O3), hydrogen (H2), and ammonia (NH3).

15. The method of manufacturing a metal oxide semiconductor as claimed in claim 13, wherein the step of treating the exposed surface is performed in an oxygen (O2) environment via a heat treatment process.

16. The method of manufacturing a metal oxide semiconductor as claimed in claim 9, wherein step b) forms the first channel layer using at least one of indium zinc oxide (IZO), indium tin oxide (ITO), and zinc tin oxide (ZTO), and step c) forms the second channel layer using at least one of indium gallium oxide (IGO), gallium tin oxide (GTO), and gallium zinc oxide (GZO).

17. The method for manufacturing a metal-oxide-semiconductor as claimed in claim 16 further includes a step of repeatedly performing step c) after repeatedly performing step b).

18. The method for manufacturing a metal oxide semiconductor as claimed in claim 16 further includes step d) of forming the first channel layer on the second channel layer using at least one of indium zinc oxide (IZO), indium tin oxide (ITO), and zinc tin oxide (ZTO).

19. The method for manufacturing a metal-oxide-semiconductor as described in claim 18 further includes a step of repeatedly performing step c) after performing step d).

Images