Resin compositions, cured materials, electronic components and display devices

Abstract

A resin composition comprising (A) a soluble resin, (B) an organic salt, and (C) a solvent, wherein the (B) organic salt is an organic salt formed from an organic compound having a carboxyl group and an organic compound having an amine group, and the (B) organic salt is 0.01 to 10 parts by weight relative to 100 parts by weight of the (A) soluble resin. This invention provides a resin composition with excellent substrate adhesion and excellent storage stability.

Description

Resin compositions, cured materials, electronic components and display devices The present invention relates to a resin composition containing a soluble resin, an organic salt and a solvent, a cured product formed by curing the resin composition, an electronic component including the cured product, and a display device including the cured product. Polyimide-based or polybenzoxazole-based materials, which possess excellent heat resistance, electrical insulation, and mechanical properties, are widely used in surface protective films or interlayer insulating films for electronic components. During the manufacturing process of electronic components, a metal layer is sometimes formed on the insulating film. However, if the adhesion between the two is insufficient, delamination will occur at the interface, resulting in poor reliability of the electronic component. Therefore, excellent adhesion between the material used for the insulating film and the metal layer is required, and excellent adhesion to the metal substrate is also required during the evaluation phase of development. To address this issue, a resin composition containing additives of basic nitrogen-containing compounds or thiol derivatives has been disclosed (see Patent Documents 1 to 3). Furthermore, to meet the requirements of microfabrication for the high integration of electronic components, resin compositions that can be patterned using photolithography by containing a photosensitizer in the insulating film are sometimes used. In such cases, resin compositions having micro-patterning capabilities at the level of several μm to tens of μm are preferably used. [Prior Art Documents] [Patent Documents] Patent Document 1: Japanese Patent Application Publication No. 2007-39486; Patent Document 2: Japanese Patent Application Publication No. 2003-5369; Patent Document 3: International Publication No. 2014 / 115233 [Problems to be solved by the invention] The resin compositions described in Patent Documents 1 and 3 promote resin reaction and increase viscosity when stored at room temperature; the resin composition described in Patent Document 2 has poor compatibility between the resin and the additives, thus both have problems in terms of storage stability. Therefore, the objective of this invention is to provide a resin composition that exhibits excellent substrate adhesion and excellent storage stability. [Means for Solving the Problem] To solve the aforementioned problem, the present invention has the following structure. That is, [1] a resin composition containing (A) a soluble resin, (B) an organic salt and (C) a solvent, wherein the (B) organic salt is an organic salt formed from an organic compound having a carboxyl group and an organic compound having an amino group, and the (B) organic salt is 0.01 to 10 parts by mass relative to 100 parts by mass of the (A) soluble resin. [2] The resin composition as described in [1], wherein the (B) organic salt contains an organic salt having the structure represented by formula (6) or formula (7). [Chemistry 1] (In equation (6), R) 14 R represents a tetravalent organogroup with 4 to 40 carbon atoms; 15 Represents a hydrogen atom or a monovalent organic group having 1 to 10 carbon atoms; R 16 (Represents a divalent organic group with 1 to 40 carbon atoms) (In formula (7), R) 17 Represents a divalent organogroup with 1 to 40 carbon atoms; where R 17 It does not contain carboxyl or carboxylic acid ester groups; R 18 [3] A resin composition as described in [1] or [2], wherein the (A) soluble resin contains at least one soluble resin selected from the group consisting of polyimide, polybenzoxazole, precursors of these and copolymers thereof. [4] A resin composition as described in any one of [1] to [3] further contains (D) a photosensitizer. [5] A resin composition as described in any one of [1] to [4], wherein the (A) soluble resin contains at least one soluble resin selected from the group consisting of polyimide having the structure represented by formula (1), polybenzoxazole having the structure represented by formula (3), polyimide precursor having the structure represented by formula (4) and g in formula (4) being 2, polybenzoxazole precursor having the structure represented by formula (4) and g in formula (4) being 0, and copolymers thereof. [Chemistry 2] (In equation (1), R) 1 R represents a tetravalent organogroup with 4 to 40 carbon atoms; 2 The structure represented by equation (2) (in equation (2), R) 3 Composed of single bonds, -O-, -C(CH) 3) 2-、-C(CF 3) 2- indicates that R 4 and R 5 Represents a monovalent organic group with 1 to 20 carbon atoms; a and b independently represent integers 1 to 4, and c and d independently represent integers 0 to 1; * represents a chemical bond. [Chemistry 3] (In equation (3), R) 6 Composed of single bonds, -O-, -C(CH) 3) 2-、-C(CF 3) 2- indicates; R 7 (Represents divalent organogroups with 4 to 40 carbon atoms) [Chemistry 4] (In equation (4), R) 8 Represents an organogroup with 4 to 40 carbon atoms, ranging from divalent to tetravalent; R 9 The structure represented by expression (5); R 10 Represents a hydrogen atom or a monovalent organic group with 1 to 20 carbon atoms; g represents 0 or 2) (In formula (5), R 11 Composed of single bonds, -O-, -C(CH) 3) 2-、-C(CF 3) 2- indicates that R 12 and R 13 Represents a monovalent organic group with 1 to 20 carbon atoms; k and l independently represent integers 1 to 4, m and n independently represent integers 0 to 1; * represents a chemical bond) [6] A resin composition as described in any one of [1] to [5], wherein R in formula (6) 16 and R in the above formula (7) 18 The structure represented by equation (8). [Chemistry 5] (In equation (8), R) 19 Composed of single bonds, -O-, -C(CH) 3) 2-、-C(CF 3) 2- indicates that R 20 and R 21 Represents a monovalent organic group with 1 to 20 carbon atoms; o and p represent integers 1 to 4 independently, q and r represent integers 0 to 1 independently; * represents a chemical bond) [7] The resin composition as described in [6], wherein R in formula (8) 19 -C(CF) 3) 2. [8] A hardener, formed by curing a resin composition as described in any one of [1] to [7]. [9] An electronic component comprising the hardener as described in [8].

[10] A display device comprising the hardener as described in [8]. [Effects of the Invention] This invention provides a resin composition with excellent substrate adhesion and excellent storage stability. In a form containing more photosensitizer, a resin composition with micro-patterning processability is provided. The present invention will now be described in detail. <(A) Soluble Resin> The resin composition of the present invention contains (A) a soluble resin. In the present invention, a soluble resin refers to a resin that dissolves at least 0.1 g at 25°C relative to 100 g of an organic solvent or alkaline aqueous solution. Examples of organic solvents include: γ-butyrolactone, γ-valerolactone, δ-valerolactone, dimethyl sulfoxide, tetrahydrofuran, dioxane, propylene glycol monomethyl ether, propylene glycol monoethyl ether, acetone, methyl ethyl ketone, cyclopentanone, cyclohexanone, ethyl acetate, butyl acetate, isobutyl acetate, propyl acetate, propylene glycol monomethyl ether acetate, 3-methyl-3-methoxybutyl acetate, methyl lactate, ethyl lactate, and diacetone alcohol. 3-Methyl-3-methoxybutanol, toluene, xylene, N-methyl-2-pyrrolidone, N-ethyl-2-pyrrolidone, N,N-dimethylmethoxylamine, N,N-dimethylacetamide, 1,3-dimethyl-2-imidazolidinedione, N,N'-dimethylacrylurea, 1,3-dimethylisobutylamide, methoxy-N,N-dimethylpropionic acid, butoxy-N,N-dimethylpropionic acid, etc. Examples of alkaline aqueous solutions include: tetramethyl ammonium hydroxide (TMAH), diethanolamine, diethylaminoethanol, sodium hydroxide, potassium hydroxide, sodium carbonate, potassium carbonate, triethylamine, diethylamine, methylamine, dimethylaminoethyl acetate, dimethylaminoethanol, dimethylaminoethyl methacrylate, cyclohexylamine, ethylenediamine, hexamethylenediamine, etc. Examples of (A) soluble resins include: polyimide, polyimide precursors, polybenzoxazole, polybenzoxazole precursors, polyimide, polyamide-imide, phenolic resins, acrylic resins, polyurea, polyesters, polysiloxanes, etc. Additionally, it may contain two or more of these resins. Among these, in terms of superior heat resistance, strength, and substrate adhesion, it is preferable to include at least one soluble resin selected from the group consisting of polyimide, polybenzoxazole, precursors of these, and copolymers of these. Polyimide and polybenzoxazole are resins with cyclic structures containing amide rings or oxazole rings within their main chain structure. Furthermore, polyimide precursors and polybenzoxazole precursors, as precursors of these resins, are resins that form amide rings or benzoxazole ring structures through dehydration and ring closure. Polyimides are obtained by reacting a tetracarboxylic acid or its corresponding tetracarboxylic dianhydride, tetracarboxylic acid diester dichloride, etc., with a diamine or its corresponding diisocyanate compound, trimethylsilylated diamine, etc., and possess organic groups derived from both the tetracarboxylic acid and the diamine. For example, polyamide, which is a precursor of polyimides obtained by reacting tetracarboxylic dianhydride with a diamine, is obtained by dehydration and ring-closure through heat treatment. During this heat treatment, a solvent that azeotropically reacts with water, such as m-xylene, may also be added. Alternatively, a dehydration condensing agent such as a carboxylic anhydride or dicyclohexylcarbodiimide, or a ring-closure catalyst such as a base, such as triethylamine, may be added, and dehydration and ring-closure may be achieved through chemithermal treatment. Alternatively, a weakly acidic carboxylic acid compound may be added, and dehydration and ring-closure may be achieved through heat treatment at a low temperature below 100°C. Polybenzoxazole is obtained by reacting a diaminophenol compound with a dicarboxylic acid or its corresponding chloride, reactive ester, etc., and contains both an organic group derived from the dicarboxylic acid and an organic group derived from the diaminophenol. For example, polyhydroxyamide, one of the precursors of polybenzoxazole, obtained by reacting a diaminophenol compound with a dicarboxylic acid, can be obtained by dehydration and ring-closure through heat treatment. Alternatively, it can be obtained by adding phosphoric anhydride, a base, or a carbodiimide compound, and then dehydrating and ring-closing through chemical treatment. (A) The soluble resin is preferably a soluble resin comprising at least one of the group consisting of a polyimide having the structure represented by formula (1), a polybenzoxazole having the structure represented by formula (3), a polyimide precursor having the structure represented by formula (4) and g in formula (4) being 2, a polybenzoxazole precursor having the structure represented by formula (4) and g in formula (4) being 0, and copolymers thereof. By using at least one soluble resin selected from the group consisting of polyimide having the structure represented by formula (1), polybenzoxazole having the structure represented by formula (3), polyimide precursor having the structure represented by formula (4) with g=2 in formula (4), polybenzoxazole precursor having the structure represented by formula (4) with g=0 in formula (4), and copolymers thereof, the resin composition exhibits excellent heat resistance, strength, and substrate adhesion. The dissolution rate in an alkaline aqueous solution used as a developer increases, and the difference between the dissolution rate of the hardened portion of the resin composition coating relative to the developer and the dissolution rate of the unhardened portion relative to the developer (hereinafter referred to as dissolution contrast) increases, thus enabling fine pattern processing. [Chemistry 6] (In equation (1), R) 1R represents a tetravalent organogroup with 4 to 40 carbon atoms; 2 The structure represented by equation (2) (in equation (2), R) 3 Composed of single bonds, -O-, -C(CH) 3) 2-、-C(CF 3) 2- indicates that R 4 and R 5 Represents a monovalent organic group with 1 to 20 carbon atoms; a and b independently represent integers 1 to 4, and c and d independently represent integers 0 to 1; * represents a chemical bond. [Chemistry 7] (In equation (3), R) 6 Composed of single bonds, -O-, -C(CH) 3) 2-、-C(CF 3) 2- indicates; R 7 (Represents divalent organogroups with 4 to 40 carbon atoms) [Chemistry 8] (In equation (4), R) 8 Represents an organogroup with 4 to 40 carbon atoms, ranging from divalent to tetravalent; R 9 The structure represented by expression (5); R 10 Represents a hydrogen atom or a monovalent organic group with 1 to 20 carbon atoms; g represents 0 or 2) (In formula (5), R 11 Composed of single bonds, -O-, -C(CH) 3) 2-、-C(CF 3) 2- indicates that R 12 and R 13 Represents a monovalent organic group with 1 to 20 carbon atoms; k and l independently represent integers 1 to 4, m and n independently represent integers 0 to 1; * represents a chemical bond) R in equation (1) 1It is an organogroup derived from a tetravalent carboxylic acid or its derivative having 4 to 40 carbon atoms, preferably an organogroup derived from a tetracarboxylic dianhydride. Examples of tetracarboxylic dianhydrides include: pyromellitic dianhydride, 3,3',4,4'-biphenyltetracarboxylic dianhydride, 2,3,3',4'-biphenyltetracarboxylic dianhydride, 2,2',3,3'-biphenyltetracarboxylic dianhydride, 3,3',4,4'-benzophenone tetracarboxylic dianhydride, 2,2',3,3'-benzophenone tetracarboxylic dianhydride, 2,2-bis(3,4-dicarboxyphenyl)propane dianhydride, 2,2-bis(2,3-dicarboxyphenyl)propane dianhydride, 1,1-bis(3,4-dicarboxyphenyl)ethane dianhydride, 1,1-bis(2,3-dicarboxyphenyl)ethane dianhydride, bis(3,4-dicarboxyphenyl) Aromatic tetracarboxylic anhydrides such as bis(2,3-dicarboxyphenyl)methane dianhydride, bis(3,4-dicarboxyphenyl)urethane dianhydride, 4,4'-oxophthalic anhydride, 1,2,5,6-naphthalenetetracarboxylic anhydride, 9,9-bis(3,4-dicarboxyphenyl)fluorenic anhydride, 9,9-bis{4-(3,4-dicarboxyphenoxy)phenyl}fluorenic anhydride, 2,3,6,7-naphthalenetetracarboxylic anhydride, 2,3,5,6-pyridinetetracarboxylic anhydride, 3,4,9,10-perylenetetracarboxylic anhydride, and 2,2-bis(3,4-dicarboxyphenyl)hexafluoropropane dianhydride, and 3,3',4,4'-diphenyl 1,2,3,4-Cyclobutanetetracarboxylic anhydride, 1,2,3,4-Cyclopentanetetracarboxylic anhydride, 1,2,4,5-Cyclohexanetetracarboxylic anhydride, 5-(2,5-dioxotetrahydrofuranyl)-3-methyl-3-cyclohexene-1,2-dicarboxylic anhydride, 2,3,5-tricarboxy-2-cyclopentaneacetic anhydride, 2,3,4,5-tetrahydrofurantetracarboxylic anhydride, 4-(2,5-dioxotetrahydrofuran-3-yl)-1,2,3,4-tetrahydronaphthalene-1,2-dicarboxylic anhydride, 4-(2,5-dioxotetrahydrofuran-3-yl)-4-methyl-1,2,3,4 Compounds containing tetrahydronaphthalene-1,2-dicarboxylic acid dianhydride, 4-(2,5-dioxotetrahydrofuran-3-yl)-7-methyl-1,2,3,4-tetrahydronaphthalene-1,2-dicarboxylic acid dianhydride, norbornane-2-spiro-2'-cyclopentanone-5'-spiro-2''-norbornane-5,5'',6,6''-tetracarboxylic acid dianhydride, norbornane-2-spiro-2'-cyclohexanone-6'-spiro-2''-norbornane-5,5'',6,6''-tetracarboxylic acid dianhydride, or compounds obtained by substituting a portion of the hydrogen atoms of the aromatic rings or hydrocarbons of these compounds with alkyl or fluoroalkyl groups having 1 to 10 carbon atoms, halogen atoms, etc. Furthermore, combinations of two or more of these tetracarboxylic acid dianhydrides may also be used. R in equation (1) 2Examples of diamines having the structure represented by formula (2) include: bis(3-amino-4-hydroxyphenyl) ether, bis(3-amino-4-hydroxyphenyl)methylene, bis[N-(3-aminobenzoyl)-3-amino-4-hydroxyphenyl] ion, bis[N-(4-aminobenzoyl)-3-amino-4-hydroxyphenyl] ion, bis(3-amino-4-hydroxyphenyl) ion, bis(3-amino-4-hydroxyphenyl) ion, bis(3-amino-4-hydroxyphenyl) propane, 2 2,2'-bis[N-(3-aminobenzoyl)-3-amino-4-hydroxyphenyl]propane, 2,2'-bis[N-(4-aminobenzoyl)-3-amino-4-hydroxyphenyl]propane, 9,9-bis(3-amino-4-hydroxyphenyl)fluorene, 9,9-bis[N-(3-aminobenzoyl)-3-amino-4-hydroxyphenyl]fluorene, 9,9-bis[N-(4-aminobenzoyl)-3-amino-4-hydroxyphenyl]fluorene, N,N'-bis (3-aminobenzoyl)-2,5-diamino-1,4-dihydroxybenzene, N,N'-bis(4-aminobenzoyl)-2,5-diamino-1,4-dihydroxybenzene, N,N'-bis(4-aminobenzoyl)-4,4'-diamino-3,3-dihydroxybiphenyl, N,N'-bis(3-aminobenzoyl)-3,3'-diamino-4,4-dihydroxybiphenyl, N,N'-bis(4-aminobenzoyl)-3,3'-diamino- 4,4-Dihydroxybiphenyl, 3,3'-diamino-4,4'-biphenol, bis(3-amino-4-hydroxyphenyl)methane, 1,1-bis(3-amino-4-hydroxyphenyl)ethane, 2,2-bis(3-amino-4-hydroxyphenyl)propane, 2,2-bis(3-amino-4-hydroxyphenyl)hexafluoropropane, or compounds obtained by substituting a portion of the hydrogen atoms of the aromatic rings or hydrocarbons of these compounds with alkyl or fluoroalkyl groups having 1 to 10 carbon atoms, halogen atoms, etc. Alternatively, combinations of two or more of these diamines having the structure represented by formula (2) may be used. R in equation (3) 6 Composed of single bonds, -O-, -C(CH) 3) 2-、-C(CF 3) 2- indicates. R in equation (3) 7 R represents a divalent organic group with 4 to 40 carbon atoms. 7 The organogroup is derived from a divalent carboxylic acid or its derivative having 4 to 40 carbon atoms, preferably an organogroup derived from a dicarboxylic acid. Examples of dicarboxylic acids include: phthalic acid, isophthalic acid, terephthalic acid, 2,2'-biphenyl dicarboxylic acid, 3,4'-biphenyl dicarboxylic acid, 4,4'-biphenyl dicarboxylic acid, benzophenone-2,4'-dicarboxylic acid, benzophenone-4,4'-dicarboxylic acid, 2,2-bis(4-carboxyphenyl)hexafluoropropane, 3,3'-dicarboxylic diphenyl ether, 3,4'-dicarboxylic diphenyl ether, 4,4'-dicarboxylic diphenyl ether. Benzyl ether, 3,3'-dicarboxylated diphenylmethane, 3,4'-dicarboxylated diphenylmethane, 4,4'-dicarboxylated diphenylmethane, 3,3'-dicarboxylated diphenyl difluoromethane, 3,4'-dicarboxylated diphenyl difluoromethane, 4,4'-dicarboxylated diphenyl difluoromethane, 3,3'-dicarboxylated diphenyl sulfonium, 3,4'-dicarboxylated diphenyl sulfonium, 4,4'-dicarboxylated diphenyl sulfonium, 3,3'-dicarboxylated diphenyl sulfonium Diphenyl sulfide, 3,4'-dicarboxylated diphenyl sulfide, 4,4'-dicarboxylated diphenyl sulfide, 3,3'-dicarboxylated diphenyl ketone, 3,4'-dicarboxylated diphenyl ketone, 4,4'-dicarboxylated diphenyl ketone, 2,2-bis(3-carboxyphenyl)propane, 2,2-bis(3,4'-dicarboxyphenyl)propane, 2,2-bis(4-carboxyphenyl)propane, 2,2-bis(3-carboxyphenyl)hexafluoro Propane, 2,2-bis(3,4'-carboxyphenyl)hexafluoropropane, 2,2-bis(4-carboxyphenyl)hexafluoropropane, 1,3-bis(3-carboxyphenoxy)benzene, 1,4-bis(3-carboxyphenoxy)benzene, 1,3-bis(4-carboxyphenoxy)benzene, or compounds obtained by substituting a portion of the hydrogen atoms of the aromatic ring or hydrocarbon of these compounds with an alkyl or fluoroalkyl group having 1 to 10 carbon atoms, a halogen atom, etc. Furthermore, two or more of these dicarboxylic acids may be used in combination. R in equation (4) 8 Represents an organogroup with 4 to 40 carbon atoms, ranging from divalent to tetravalent. R in formula (4) 8 When g is 0, it is an organic group derived from a divalent carboxylic acid or its derivative having 4 to 40 carbon atoms, preferably an organic group derived from a dicarboxylic acid. As a dicarboxylic acid, it can be listed as R in equation (3). 7 The same dicarboxylic acid. R in equation (4) 8 When g is 2, it is an organic group derived from a tetravalent carboxylic acid or its derivative having 4 to 40 carbon atoms, preferably an organic group derived from a tetracarboxylic dianhydride. As a tetracarboxylic acid dianhydride, it can be listed as R in formula (1). 1 The same tetracarboxylic acid dianhydride. R in equation (4) 9 As for the structure represented by formula (5), diamines having the structure represented by formula (5) can be listed as having the same structure as those represented by formula (2). (A) The soluble resin preferably has its end-capped by one or more of monoamines, acid anhydrides, acetic acid chlorides, and monocarboxylic acids. By using one or more of monoamines, acid anhydrides, acetic acid chlorides, and monocarboxylic acids to cap the end-capped resin, the resin composition exhibits excellent storage stability. When using monoamines to block the ends, the amount of monoamine relative to the total amine content is preferably in the range of 0.1 mol% to 60 mol%, more preferably 5 mol% to 50 mol%. With 5 mol% or more, excellent storage stability is achieved, and with 50 mol% or less, sufficient weight average molecular weight can be obtained, which is preferred in this respect. Examples of monoamines include: 5-amino-8-hydroxyquinoline, 1-hydroxy-7-aminonaphthalene, 1-hydroxy-6-aminonaphthalene, 1-hydroxy-5-aminonaphthalene, 1-hydroxy-4-aminonaphthalene, 2-hydroxy-7-aminonaphthalene, 2-hydroxy-6-aminonaphthalene, 2-hydroxy-5-aminonaphthalene, 1-carboxy-7-aminonaphthalene, 1-carboxy-6-aminonaphthalene, 1-carboxy-5-aminonaphthalene, 2-carboxy- 7-Aminonaphthalene, 2-Carboxy-6-aminonaphthalene, 2-Carboxy-5-aminonaphthalene, 2-aminobenzoic acid, 3-aminobenzoic acid, 4-aminobenzoic acid, 4-aminosalicylic acid, 5-aminosalicylic acid, 6-aminosalicylic acid, 3-amino-4,6-dihydroxypyrimidine, 2-aminophenol, 3-aminophenol, 4-aminophenol, 2-aminobenzylthiophenol, 3-aminobenzylthiophenol, 4-aminobenzylthiophenol, etc. Two or more of these monoamines can also be used in combination. When using anhydrides, acetic acid chlorides, and monocarboxylic acids to block the ends, the amount of each compound relative to the total acid content is preferably in the range of 0.1 mol% to 60 mol%, more preferably 5 mol% to 50 mol%. A content of 5 mol% or more provides excellent storage stability, while a content of 50 mol% or less allows for obtaining a sufficient weight-average molecular weight, which is preferable in this respect. Examples of acid anhydrides, acetic acid, and monocarboxylic acids include phthalic anhydride, maleic anhydride, terephthalic anhydride, cyclohexanedicarboxylic anhydride, and 3-hydroxyphthalic anhydride; monocarboxylic acids include 3-carboxyphenol, 4-carboxyphenol, 3-carboxybenzylthiophenol, 4-carboxybenzylthiophenol, 1-hydroxy-7-carboxynaphthalene, 1-hydroxy-6-carboxynaphthalene, 1-hydroxy-5-carboxynaphthalene, 1-mercapto-7-carboxynaphthalene, 1-mercapto-6-carboxynaphthalene, and 1-mercapto-5-carboxynaphthalene. Monochloro compounds obtained by chlorohydrining the carboxyl groups of these compounds; monochloro compounds obtained by chlorohydrining only one carboxyl group of dicarboxylic acids such as terephthalic acid, phthalic acid, maleic acid, cyclohexanedicarboxylic acid, 1,5-dicarboxynaphthalene, 1,6-dicarboxynaphthalene, 1,7-dicarboxynaphthalene, and 2,6-dicarboxynaphthalene; and active ester compounds obtained by reacting monochloro compounds with N-hydroxybenzotriazole or N-hydroxy-5-norbornene-2,3-dimethylimidene. Combinations of two or more of these anhydrides, chlorohydrins, and monocarboxylic acids can also be used. (A) The weight-average molecular weight of the soluble resin is preferably 1,000 or more and 200,000 or less, more preferably 5,000 or more and 100,000 or less, and even more preferably 10,000 or more and 50,000 or less. By achieving a weight-average molecular weight within the aforementioned range, good processability for fine patterns, heat resistance, and strength can be obtained. The weight-average molecular weight is determined by gel permeation chromatography (GPC) and calculated using polystyrene conversion. <(B) Organic Salts> The resin composition of the present invention contains (B) organic salts. In the present invention, organic salts refer to salts formed from organic compounds having acidic functional groups and organic compounds having basic functional groups. Examples of acidic functional groups include: carboxyl groups, sulfonic acid groups, phosphate groups, phenolic hydroxyl groups, etc. Examples of basic functional groups include: amino groups, specifically primary amino groups, secondary amino groups, etc. (B) The organic salt preferably contains an organic salt having the structure represented by formula (6) or formula (7). By making (B) the organic salt contain an organic salt having the structure represented by formula (6) or formula (7), the bonding between the resin composition and the Si substrate and SiO2 can be further improved. 2. Adhesion to exemplified substrates such as SiN substrate, Al substrate, Cu substrate, Ti substrate, and indium tin oxide (ITO) substrate. [Chemistry 9] (In equation (6), R) 14 R represents a tetravalent organogroup with 4 to 40 carbon atoms; 15 Represents a hydrogen atom or a monovalent organic group having 1 to 10 carbon atoms; R 16 (Represents a divalent organic group with 1 to 40 carbon atoms) (In formula (7), R) 17 Represents a divalent organogroup with 1 to 40 carbon atoms; where R 17 It does not contain carboxyl or carboxylic acid ester groups; R 18 R in formula (6) represents a divalent organogroup with 1 to 40 carbon atoms. 14 The organogroup is derived from a tetravalent carboxylic acid or its derivative having 4 to 40 carbon atoms, preferably an organogroup derived from a tetracarboxylic acid. Examples of tetracarboxylic acids include: pyromellitic acid, 3,3',4,4'-biphenyltetracarboxylic acid, 2,3,3',4'-biphenyltetracarboxylic acid, 2,2',3,3'-biphenyltetracarboxylic acid, 3,3',4,4'-benzophenone tetracarboxylic acid, 2,2',3,3'-benzophenone tetracarboxylic acid, 2,2-bis(3,4-dicarboxyphenyl)propane, 2,2-bis(2,3-dicarboxyphenyl)propane, 1,1-bis(3,4-dicarboxyphenyl)ethane, 1,1-bis(2,3-dicarboxyphenyl)ethane, and bis(3,4-dicarboxyphenyl)methane. Aromatic tetracarboxylic acids including bis(2,3-dicarboxyphenyl)methane, bis(3,4-dicarboxyphenyl)fluorene, 4,4'-oxobisphthalic acid, 1,2,5,6-naphthalenetetracarboxylic acid, 9,9-bis(3,4-dicarboxyphenyl)fluoreneic acid, 9,9-bis{4-(3,4-dicarboxyphenoxy)phenyl}fluoreneic acid, 2,3,6,7-naphthalenetetracarboxylic acid, 2,3,5,6-pyridinetetracarboxylic acid, 3,4,9,10-perylenetetracarboxylic acid, 2,2-bis(3,4-dicarboxyphenyl)hexafluoropropane, 3,3',4,4'-diphenylenetetracarboxylic acid, 1,2,3 4-Cyclobutanetetracarboxylic acid, 1,2,3,4-Cyclopentanetetracarboxylic acid, 1,2,4,5-Cyclohexanetetracarboxylic acid, 5-(2,5-dioxotetrahydrofuranyl)-3-methyl-3-cyclohexene-1,2-dicarboxylic acid, 2,3,5-tricarboxy-2-cyclopentaneacetic acid, 2,3,4,5-tetrahydrofurantetracarboxylic acid, 4-(2,5-dioxotetrahydrofuran-3-yl)-1,2,3,4-tetrahydronaphthalene-1,2-dicarboxylic acid, 4-(2,5-dioxotetrahydrofuran-3-yl)-4-methyl-1,2,3,4-tetrahydronaphthalene-1,2- Dicarboxylic acids, 4-(2,5-dioxotetrahydrofuran-3-yl)-7-methyl-1,2,3,4-tetrahydronaphthalene-1,2-dicarboxylic acids, norbornane-2-spiro-2'-cyclopentanone-5'-spiro-2''-norbornane-5,5'',6,6''-tetracarboxylic acids, norbornane-2-spiro-2'-cyclohexanone-6'-spiro-2''-norbornane-5,5'',6,6''-tetracarboxylic acids, or compounds obtained by substituting a portion of the hydrogen atoms of the aromatic rings or hydrocarbons of these compounds with alkyl or fluoroalkyl groups having 1 to 10 carbon atoms, halogen atoms, etc. Furthermore, combinations of two or more of these tetracarboxylic acids may also be used. R in equation (6) 16 The organogroup is derived from a divalent diamine or its derivative having 1 to 40 carbon atoms, preferably a divalent organogroup obtained by removing two amino groups from a diamine. Examples of diamines include: 3,4'-diaminodiphenyl ether, 4,4'-diaminodiphenyl ether, 3,4'-diaminodiphenylmethane, 4,4'-diaminodiphenylmethane, 3,4'-diaminodiphenyl sulfide, 4,4'-diaminodiphenyl sulfide, 1,4-bis(4-aminophenoxy)benzene, benzidine, m-phenylenediamine, p-phenylenediamine, 1,5-naphthylenediamine, 2,6-naphthylenediamine, bis(4-aminophenoxyphenyl) sulfide, bis(3-aminophenoxyphenyl) sulfide, bis(4-aminophenoxy)biphenyl, bis{4-(4-aminophenoxy)phenyl} ether, 1,4-bis(4-aminophenoxy)benzene, 2,2'-dimethyl... Aromatic diamines such as -4,4'-diaminobiphenyl, 2,2'-diethyl-4,4'-diaminobiphenyl, 3,3'-dimethyl-4,4'-diaminobiphenyl, 3,3'-diethyl-4,4'-diaminobiphenyl, 2,2',3,3'-tetramethyl-4,4'-diaminobiphenyl, 3,3',4,4'-tetramethyl-4,4'-diaminobiphenyl, 2,2'-bis(trifluoromethyl)-4,4'-diaminobiphenyl, or compounds obtained by substituting a portion of the hydrogen atoms of these aromatic rings or hydrocarbons with alkyl or fluoroalkyl groups having 1 to 10 carbon atoms, halogen atoms, etc., bis(3-amino-4-hydroxyphenyl) ethers, bis(3-amino-4-hydroxyphenyl)methylene, bis[N-(3-aminophenyl) [N-(4-aminobenzoyl)-3-amino-4-hydroxyphenyl] benzoyl, bis[N-(4-aminobenzoyl)-3-amino-4-hydroxyphenyl] benzoyl, bis(3-amino-4-hydroxyphenyl) benzoyl, bis(3-amino-4-hydroxyphenyl) propane, 2,2'-bis[N-(3-aminobenzoyl)-3-amino-4-hydroxyphenyl] propane, 2,2'-bis[ [N-(4-aminobenzoyl)-3-amino-4-hydroxyphenyl]propane, 9,9-bis(3-amino-4-hydroxyphenyl)fluorene, 9,9-bis[N-(3-aminobenzoyl)-3-amino-4-hydroxyphenyl]fluorene, 9,9-bis[N-(4-aminobenzoyl)-3-amino-4-hydroxyphenyl]fluorene, N,N'-bis(3- N,N'-bis(4-aminobenzoyl)-2,5-diamino-1,4-dihydroxybenzene, N,N'-bis(4-aminobenzoyl)-4,4'-diamino-3,3-dihydroxybiphenyl, N,N'-bis(3-aminobenzoyl)-3,3'-diamino-4, 4-Dihydroxybiphenyl, N,N'-bis(4-aminobenzoyl)-3,3'-diamino-4,4-dihydroxybiphenyl, 3,3'-diamino-4,4'-biphenyl, bis(3-amino-4-hydroxyphenyl)methane, 1,1-bis(3-amino-4-hydroxyphenyl)ethane, 2,2-bis(3-amino-4-hydroxyphenyl)propane, 2,Compounds such as 2-bis(3-amino-4-hydroxyphenyl)hexafluoropropane, or compounds obtained by substituting a portion of the hydrogen atoms of the aromatic rings or hydrocarbons thereof with alkyl or fluoroalkyl groups having 1 to 10 carbon atoms, halogen atoms, etc. R in equation (7) 17 R represents a divalent organogroup with 1 to 40 carbon atoms. 17 The organogroup is derived from a divalent carboxylic acid or its derivative having 1 to 40 carbon atoms, preferably an organogroup derived from a dicarboxylic acid. Examples of dicarboxylic acids include: phthalic acid, isophthalic acid, terephthalic acid, 2,2'-biphenyl dicarboxylic acid, 3,4'-biphenyl dicarboxylic acid, 4,4'-biphenyl dicarboxylic acid, benzophenone-2,4'-dicarboxylic acid, benzophenone-4,4'-dicarboxylic acid, 2,2-bis(4-carboxyphenyl)hexafluoropropane, 3,3'-dicarboxylic diphenyl ether, 3,4'-dicarboxylic diphenyl ether, 4,4'-dicarboxylic diphenyl ether. Benzyl ether, 3,3'-dicarboxylated diphenylmethane, 3,4'-dicarboxylated diphenylmethane, 4,4'-dicarboxylated diphenylmethane, 3,3'-dicarboxylated diphenyl difluoromethane, 3,4'-dicarboxylated diphenyl difluoromethane, 4,4'-dicarboxylated diphenyl difluoromethane, 3,3'-dicarboxylated diphenyl sulfonium, 3,4'-dicarboxylated diphenyl sulfonium, 4,4'-dicarboxylated diphenyl sulfonium, 3,3'-dicarboxylated diphenyl sulfonium Diphenyl sulfide, 3,4'-dicarboxylated diphenyl sulfide, 4,4'-dicarboxylated diphenyl sulfide, 3,3'-dicarboxylated diphenyl ketone, 3,4'-dicarboxylated diphenyl ketone, 4,4'-dicarboxylated diphenyl ketone, 2,2-bis(3-carboxyphenyl)propane, 2,2-bis(3,4'-dicarboxyphenyl)propane, 2,2-bis(4-carboxyphenyl)propane, 2,2-bis(3-carboxyphenyl)hexafluoro Propane, 2,2-bis(3,4'-carboxyphenyl)hexafluoropropane, 2,2-bis(4-carboxyphenyl)hexafluoropropane, 1,3-bis(3-carboxyphenoxy)benzene, 1,4-bis(3-carboxyphenoxy)benzene, 1,3-bis(4-carboxyphenoxy)benzene, or compounds obtained by substituting a portion of the hydrogen atoms of the aromatic ring or hydrocarbon of these compounds with an alkyl or fluoroalkyl group having 1 to 10 carbon atoms, a halogen atom, etc. Furthermore, two or more of these dicarboxylic acids may be used in combination. R in equation (7) 18 The organogroup is derived from a divalent diamine or its derivative having 1 to 40 carbon atoms, preferably a divalent organogroup obtained by removing two amino groups from a diamine. As a diamine, it can be listed as R in equation (6). 16 The same diamine. R in equation (6) 16 R in equation (7) 18 The structure represented by formula (8) is preferred. With the structure represented by formula (8), the dissolution rate in the alkaline aqueous solution used as the developer increases, the dissolution contrast between the hardened and unhardened parts of the resin composition coating increases, and it is easier to obtain fine pattern processing properties. [Chemistry 10] (In equation (8), R) 19 Composed of single bonds, -O-, -C(CH) 3) 2-、-C(CF 3) 2- indicates that R 20 and R 21The symbol represents a monovalent organic group with 1 to 20 carbon atoms; o and p represent integers 1 to 4 independently, and q and r represent integers 0 to 1 independently; * represents a chemical bond. Examples of diamines having the structure represented by formula (8) include: bis(3-amino-4-hydroxyphenyl) ether, bis(3-amino-4-hydroxyphenyl)methylene, bis[N-(3-aminobenzoyl)-3-amino-4-hydroxyphenyl] ion, bis[N-(4-aminobenzoyl)-3-amino-4-hydroxyphenyl] ion, bis(3-amino-4-hydroxyphenyl) ion, bis(3-amino-4-hydroxyphenyl) propane, 2,2'-bis[N-( [3-aminobenzoyl)-3-amino-4-hydroxyphenyl]propane, 2,2'-bis[N-(4-aminobenzoyl)-3-amino-4-hydroxyphenyl]propane, 9,9-bis(3-amino-4-hydroxyphenyl)fluorene, 9,9-bis[N-(3-aminobenzoyl)-3-amino-4-hydroxyphenyl]fluorene, 9,9-bis[N-(4-aminobenzoyl)-3-amino-4-hydroxyphenyl]fluorene, N,N'-bis(3-aminobenzoyl)fluorene N,N'-bis(4-aminobenzoyl)-2,5-diamino-1,4-dihydroxybenzene, N,N'-bis(4-aminobenzoyl)-4,4'-diamino-3,3-dihydroxybiphenyl, N,N'-bis(3-aminobenzoyl)-3,3'-diamino-4,4-dihydroxybiphenyl, N,N'-bis(4-aminobenzoyl)-3,3'-diamino-4,4-dihydroxybiphenyl -Dihydroxybiphenyl, 3,3'-diamino-4,4'-biphenyl, bis(3-amino-4-hydroxyphenyl)methane, 1,1-bis(3-amino-4-hydroxyphenyl)ethane, 2,2-bis(3-amino-4-hydroxyphenyl)propane, 2,2-bis(3-amino-4-hydroxyphenyl)hexafluoropropane, or compounds obtained by substituting a portion of the hydrogen atoms of the aromatic rings or hydrocarbons of these compounds with alkyl or fluoroalkyl groups having 1 to 10 carbon atoms, halogen atoms, etc. R in equation (8) 19 Better to be -C(CF) 3) 2-. By means of R 19 -C(CF) 3) 2-, with R 19 For single bonds, -O-, -C(CH) 3) Compared to case 2-, the dissolution rate in the alkaline aqueous solution used as the developer is greater, the dissolution contrast between the hardened and unhardened parts of the resin composition coating is greater, and it is easier to obtain fine pattern processing properties. As R in equation (8) 19 -C(CF) 3) Examples of 2-diamines include 2,2-bis(3-amino-4-hydroxyphenyl)hexafluoropropane, or compounds obtained by substituting a portion of the hydrogen atoms of these aromatic rings or hydrocarbons with alkyl or fluoroalkyl groups having 1 to 10 carbon atoms, halogen atoms, etc. Compared to 100 parts by weight of soluble resin (A), the content of organic salt (B) is set to be 0.01 parts by weight or more and 10 parts by weight or less, preferably 0.05 parts by weight or more and 1 part by weight or less. When the content of organic salt (B) is less than 0.01 parts by weight, the processability of fine patterns and the adhesion to the substrate are poor. When the content of organic salt (B) exceeds 10 parts by weight, the storage stability is poor. (B) Organic salts having the structure represented by formula (6) can be obtained, for example, by stirring the tetracarboxylic acid of a certain amount with a diamine in a solvent, and organic salts having the structure represented by formula (7) can be obtained, for example, by stirring the dicarboxylic acid of a certain amount with a diamine in a solvent. As a solvent, organic solvents or water, as exemplified in the section <(A) Soluble Resins>, are acceptable, but water is preferred from the viewpoint of reaction yield. The reaction temperature is preferably 0°C or higher and 150°C or lower, more preferably 10°C or higher and 120°C or lower, and particularly preferably 30°C or higher and 80°C or lower. By setting the reaction temperature to the aforementioned preferred range, the tetracarboxylic acid and diamine react sufficiently to obtain an organic salt having the structure represented by formula (6) in organic salt (B), thus suppressing over-reaction. Furthermore, the sufficient reaction of dicarboxylic acid and diamine to obtain an organic salt having the structure represented by formula (7) in organic salt (B) also suppresses over-reaction. The reaction time is preferably 0.5 hours or higher and 30 hours or lower, more preferably 1 hour or higher and 20 hours or lower, and particularly preferably 2 hours or higher and 10 hours or lower. By allowing the reaction time to be within the aforementioned preferred range, the tetracarboxylic acid and diamine react fully to obtain an organic salt of (B) having the structure represented by formula (6), thus suppressing over-reaction. Alternatively, the dicarboxylic acid and diamine react fully to obtain an organic salt of (B) having the structure represented by formula (7), thus suppressing over-reaction. As a second method for obtaining an organic salt having the structure represented by formula (6) in (B), one example is the method of hydrolyzing a tetracarboxylic acid anhydride, which is a derivative of the tetracarboxylic acid, by stirring in water, followed by adding an equal mole of the diamine and stirring. The hydrolysis reaction temperature is preferably 0°C or higher and 150°C or lower, more preferably 10°C or higher and 120°C or lower, and particularly preferably 30°C or higher and 80°C or lower. By keeping the reaction temperature within the aforementioned preferred range, hydrolysis can be carried out sufficiently, and over-reaction is suppressed. The reaction time is preferably 0.5 hours or higher and 30 hours or lower, more preferably 1 hour or higher and 20 hours or lower, and particularly preferably 2 hours or higher and 10 hours or lower. By keeping the reaction temperature within the aforementioned preferred range, hydrolysis can be carried out sufficiently, and over-reaction is suppressed. <(C) Solvent> The resin composition of the present invention contains (C) solvent. In the present invention, solvent refers to a component that can dissolve (A) soluble resin, (B) organic salt, (D) photosensitizer, and other components. (C) The content of the solvent is not particularly limited, but is preferably 100 parts by weight or more and 10,000 parts by weight or less, more preferably 100 parts by weight or more and 5,000 parts by weight or less, and even more preferably 100 parts by weight or more and 2,000 parts by weight or less, relative to 100 parts by weight of the soluble resin in (A). By setting the content of the solvent in (C) within the aforementioned preferred range, excellent coatability and flatness of the coating film are achieved, and a coating film with a thickness of 1 μm or more can be formed. (C) The boiling point of the solvent at atmospheric pressure is preferably above 50°C and below 250°C, more preferably above 100°C and below 210°C. By making the boiling point at atmospheric pressure within the aforementioned range, the solvent can be removed from the coating film in a short time during the drying step of the resin composition coating film, resulting in excellent step embedding properties of the patterned substrate. Examples of solvents with boiling points in the aforementioned range at atmospheric pressure include: ethyl lactate (boiling point 154°C), butyl lactate (boiling point 186°C), dipropylene glycol dimethyl ether (boiling point 171°C), diethylene glycol dimethyl ether (boiling point 162°C), diethylene glycol ethyl methyl ether (boiling point 176°C), diethylene glycol diethyl ether (boiling point 189°C), 3-methoxybutyl acetate (boiling point 171°C), ethylene glycol monoethyl ether acetate (boiling point 160°C), γ-butyrolactone (boiling point 203°C), N-methyl-2-pyrrolidone (boiling point 204°C), diacetone alcohol (boiling point 166°C), N-cyclohexyl-2-pyrrolidone (boiling point 154°C), N,N-dimethyl methyl ether... Alkyl glycol monoalkyl ethers such as acetylamine (boiling point 153℃), N,N-dimethylacetylamine (boiling point 165℃), dimethyl sulfoxide (boiling point 189℃), propylene glycol monomethyl ether acetate (boiling point 146℃), N,N-dimethylisobutyric acid acetylamine (boiling point 175℃), ethylene glycol monomethyl ether (boiling point 124℃), and propylene glycol monomethyl ether (boiling point 120℃); alkyl acetates such as propyl acetate (boiling point 102℃), butyl acetate (boiling point 125℃), and isobutyl acetate (boiling point 118℃); ketones such as methyl isobutyl ketone (boiling point 116℃) and methyl propyl ketone (boiling point 102℃); and alcohols such as butanol (boiling point 117℃) and isobutanol (boiling point 108℃). It can also be used in combination of two or more solvents with boiling points above 100°C and below 210°C at atmospheric pressure. (C) The solubility parameter (SP value) of the solvent is preferably 7.0 or higher and 13.0 or lower. By keeping the SP value within this range, the efflorescence of solid components can be suppressed, making it easier to dissolve (A) soluble resins. The SP value is more preferably 12.5 or lower. In this invention, the solubility parameter (SP value) is the value recorded in "Basic Science of Coating" (page 65, by Yuji Harasaki, Maki Shoten). Alternatively, for those where the SP value is not recorded, the value is calculated by Fedors based on page 55 of the aforementioned book, using the evaporation energy and molar volume of atoms and groups. Solvents with SP values ​​above 7.0 and below 13.0 include: ethyl lactate (SP value 10.6, literature value), butyl lactate (SP value 9.7, literature value), dipropylene glycol dimethyl ether (SP value 7.9, calculated value), diethylene glycol dimethyl ether (SP value 8.1, calculated value), diethylene glycol ethyl methyl ether (SP value 8.1, calculated value), diethylene glycol diethyl ether (SP value 8.2, calculated value), 3-methoxybutyl acetate (SP value 8.7, calculated value), ethylene glycol monoethyl ether acetate (SP value 9.0, calculated value), γ-butyrolactone (SP value 12.8, literature value), N-methyl-2-pyrrolidone (SP value 11.2, literature value), diacetone alcohol (SP value 10.2, literature value), N-cyclohexyl-2-pyrrolidone (SP value 10.8, literature value), N... N-Dimethylformamide (SP value 12.1, literature value), N,N-Dimethylacetamide (SP value 11.1, literature value), dimethyl sulfoxide (SP value 12.9, literature value), propylene glycol monomethyl ether acetate (SP value 8.7, calculated value), N,N-Dimethylisobutyric acid amide (SP value 9.9, calculated value), ethylene glycol monomethyl ether (SP value 10.8, calculated value), propylene glycol monomethyl ether (SP value 10.2, calculated value), propyl acetate (SP value 8.7, calculated value), butyl acetate (SP value 8.5, literature value), isobutyl acetate (SP value 8.4, literature value), methyl isobutyl ketone (SP value 8.6, literature value), methyl propyl ketone (SP value 8.9, calculated value), butanol (SP value 11.3, literature value), isobutanol (SP value 11.1, literature value), etc. Alternatively, two or more solvents with SP values ​​of 7.0 or higher and 13.0 or lower may be used in combination. <(D) Photosensitive Agent> The resin composition of the present invention contains a (D) photosensitive agent. The photosensitive agent in the present invention refers to a component that generates reactive species by exposure, such as (D-1) photoacid generator or (D-2) photopolymerization initiator, etc. (D-1) Photoacid generating agent is a component that generates acid upon exposure. The exposed area dissolves faster relative to the alkaline aqueous solution, creating a dissolution contrast with the unexposed area, thereby obtaining a positive relief pattern where the exposed area is soluble. Positive patterns are preferred for applications requiring particularly high resolution. Alternatively, by using a mixture containing (D-1) photoacid generating agent and a crosslinking agent (described later), the acid generated in the exposed area causes the crosslinking agent to undergo a crosslinking reaction, resulting in a negative relief pattern where the exposed area is insoluble. Negative patterns are preferred for applications requiring particularly high exposure sensitivity and / or thick film processing. Examples of (D-1) photoacid generators include: quinone diazide compounds, strontium salts, phosphonium salts, diazonium salts, iodonium salts, etc. Examples of quinone diazide compounds include: compounds obtained by ester bonding of polyhydroxy compounds with the sulfonylurea group of quinone diazide; compounds obtained by sulfonylurea bonding of polyamine compounds with the sulfonylurea group of quinone diazide; and compounds obtained by ester bonding and / or sulfonylurea bonding of polyhydroxy polyamine compounds with the sulfonylurea group of quinone diazide. As the sulfonyl group in quinone diazido compounds, both 4-naphthoquinone diazidosulfonyl and 5-naphthoquinone diazidosulfonyl are preferred. The 4-naphthoquinone diazidosulfonyl ester compound absorbs in the i-ray region of a mercury lamp, making it suitable for i-ray exposure. The 5-naphthoquinone diazidosulfonyl ester compound absorbs in the g-ray region of a mercury lamp, making it suitable for g-ray exposure. In this invention, it is preferable to select the 4-naphthoquinone diazidosulfonyl ester compound and the 5-naphthoquinone diazidosulfonyl ester compound according to the wavelength of the light used for exposure. Alternatively, a naphthoquinone diazidosulfonyl ester compound may contain both 4-naphthoquinone diazidosulfonyl and 5-naphthoquinone diazidosulfonyl groups in the same molecule, or it may contain both 4-naphthoquinone diazidosulfonyl ester compound and 5-naphthoquinone diazidosulfonyl ester compound. (D-1) Among the photoacid generating agents, strontium salts, phosphonium salts, diazonium salts, and iodonium salts are preferred in terms of stabilizing the acid generated by exposure. Among these, strontium salts are more preferred from the viewpoint of wiring corrosion. Examples of cations that can form strontium salts include: triphenylstrontium, tri-p-tolylstrontium, tri-o-tolylstrontium, tris(4-methoxyphenyl)strontium, 1-naphthyldiphenylstrontium, 2-naphthyldiphenylstrontium, tris(4-fluorophenyl)strontium, tri-1-naphthylstrontium, tri-2-naphthylstrontium, tris(4-hydroxyphenyl)strontium, 4-(phenylthio)phenyldiphenylstrontium, 4-(p-tolylthio)phenyldi-p-tolylstrontium, 4-(4-methoxyphenylthio)phenylbis(4-methoxyphenyl)strontium, 4-(phenylthio)phenylbis(4-fluorophenyl)strontium, 4-(phenylthio)phenylbis(4-methoxyphenyl)strontium, and 4-(phenylthio) Phenylacetyl di-p-tolyl strontium, [4-(4-biphenylthio)phenyl]-4-biphenylphenyl strontium, [4-(2-thioxanthonethio)phenyl]diphenyl strontium, bis[4-(diphenylstrontium)phenyl] sulfide, bis[4-{bis[4-(2-hydroxyethoxy)phenyl]strontium}phenyl] sulfide, bis{4-[bis(4-fluorophenyl)strontium]phenyl} sulfide, bis{4-[bis(4-methylphenyl)strontium]phenyl} sulfide, bis{4-[bis(4-methoxyphenyl)strontium]phenyl} sulfide, 4-(4-benzopyrene-2-chlorophenylthio)phenyl bis(4-fluorophenyl)strontium ... 4-(4-benzophenoxyl)phenyl diphenyl strontium, 4-(4-benzophenoxyl)phenyl bis(4-fluorophenyl) strontium, 4-(4-benzophenoxyl)phenyl diphenyl strontium, 7-isopropyl-9-oxo-10-thia-9,10-dihydroanthracene-2-yldi-p-tolyl strontium, 7-isopropyl-9-oxo-10-thia-9,10-dihydroanthracene-2-yldiphenyl strontium, 2-[(di-p-tolyl)strontium]thioxanthone, 2-[(diphenyl)strontium]thioxanthone, 4-(9-oxo-9H-thioxanth-2-yl)thiophenyl-9-oxo-9H-thioxanth-2-ylphenyl strontium, 4-[4-(4- Triaryl strontium such as 4-[4-(4-tert-butylbenzoyl)phenylthio]phenyldiphenylstrontium, 4-[4-(benzophenylthio)]phenyldiphenylstrontium, 4-[4-(benzophenylthio)]phenyldiphenylstrontium, 5-(4-methoxyphenyl)thianthane, 5-phenylthianthianthane, 5-tolylthianthianthane, 5-(4-ethoxyphenyl)thianthianthane, 5-(2,4,6-trimethylphenyl)thianthianthane, etc.; diphenylbenzomethylstrontium, diphenyl-4-nitrobenzomethylstrontium, diphenylbenzylstrontium, diphenylmethylstrontium, etc.Phenylacetylbenzyl strontium, 4-hydroxyphenylmethylbenzyl strontium, 4-methoxyphenylmethylbenzyl strontium, 4-acetoxyphenylmethylbenzyl strontium, 4-hydroxyphenyl(2-naphthylmethyl)methyl strontium, 2-naphthylmethylbenzyl strontium, 2-naphthylmethyl(1-ethoxycarbonyl)ethyl strontium, phenylmethylbenzylmethyl strontium, 4-hydroxyphenylmethylbenzylmethyl strontium, 4-methoxy Monoaryl strontium spars include methylbenzylbenzoyl strontium, 4-acetylated carbonyloxyphenylbenzylbenzoyl strontium, 2-naphthylmethylbenzyl strontium, 2-naphthyloctadecylbenzyl strontium, and 9-anthraylmethylbenzyl strontium; dimethylbenzyl strontium, benzylmethyltetrahydrothiophenonium, dimethylbenzyl strontium, benzyltetrahydrothiophenonium, and octadecylmethylbenzyl strontium, etc. The anion that forms strontium salt is preferably one selected from the group consisting of borate ions, phosphate ions, and gallate ions. Examples of borate ions include: pentafluorophenylborate, trifluorophenylborate, tetrafluorophenylborate, trifluoromethylphenylborate, bis(trifluoromethyl)phenylborate, pentafluoroethylphenylborate, bis(pentafluoroethyl)phenylborate, fluoro-bis(trifluoromethyl)phenylborate, fluoro-pentafluoroethylphenylborate, fluoro-bis(pentafluoroethyl)phenylborate, etc. Examples of phosphate ions include hexafluorophosphate and tri(pentafluoroethyl)trifluorophosphate. Examples of gallate ions include tetra(pentafluorophenyl) gallate and tetra(3,5-bis(trifluoromethyl)phenyl) gallate. The content of photoacid generator (D-1) is preferably 0.01 parts by mass and 50 parts by mass or more, relative to 100 parts by mass of soluble resin (A). Maintaining the content within this range is preferable in terms of good sensitivity and excellent storage stability. (D-2) Photopolymerization initiator is a component that generates free radicals through bond breaking and / or reactions caused by exposure. By using (D-2) photopolymerization initiator and the free radical polymerizable compound described later, a free radical polymerization reaction is carried out in the exposed area to obtain a negative relief pattern that is insoluble in the exposed area. The negative type is preferred in applications that require particularly high exposure sensitivity and / or thick film processing. Examples of (D-2) photopolymerization initiators include: benzyl ketal photopolymerization initiators, α-hydroxy ketone photopolymerization initiators, α-amino ketone photopolymerization initiators, acetophosphine oxide photopolymerization initiators, oxime ester photopolymerization initiators, acridine photopolymerization initiators, titanoceramsite photopolymerization initiators, benzophenone photopolymerization initiators, acetophenone photopolymerization initiators, aromatic ketone ester photopolymerization initiators, and benzoic acid ester photopolymerization initiators. From a sensitivity perspective, α-amino ketone photopolymerization initiators, acetophosphine oxide photopolymerization initiators, and oxime ester photopolymerization initiators are preferred. Examples of α-amino ketone photopolymerization initiators include: 2-methyl-1-[4-(methylthio)phenyl]-2-morpholinopropane-1-one, 2-benzyl-2-dimethylamino-1-(4-morpholinophenyl)-butane-1-one, 2-dimethylamino-2-(4-methylbenzyl)-1-(4-morpholinophenyl)-butane-1-one, and 3,6-bis(2-methyl-2-morpholinopropane)-9-octyl-9H-carbazole. Examples of phosphine oxide photopolymerization initiators include 2,4,6-trimethylbenzoyl-diphenylphosphine oxide, bis(2,4,6-trimethylbenzoyl)-phenylphosphine oxide, and bis(2,6-dimethoxybenzoyl)-(2,4,4-trimethylpentyl)phosphine oxide. Examples of oxime ester-based photopolymerization initiators include: 1-phenylpropane-1,2-dione-2-(O-ethoxycarbonyl)oxime, 1-phenylbutane-1,2-dione-2-(O-methoxycarbonyl)oxime, 1,3-diphenylpropane-1,2,3-trione-2-(O-ethoxycarbonyl)oxime, 1-[4-(phenylthio)phenyl]octane-1,2-dione-2-(O-benzoyl)oxime, 1-[4-[4-[4-(carboxyphenyl)thio]phenyl]propane-1,2-dione-2-(O-acetylated)oxime, and 1-[9-ethylhexyl]propane-1,2-dione-2-(O-acetylated)oxime. Examples include 1-[9-ethyl-6-[2-methylbenzoyl]-9H-carbazole-3-yl]acetone-1-(O-acetyl)oxime, 1-[9-ethyl-6-[2-methyl-4-[1-(2,2-dimethyl-1,3-dioxacyclopentan-4-yl)methyloxy]benzoyl]-9H-carbazole-3-yl]acetone-1-(O-acetyl)oxime, and 1-(9-ethyl-6-nitro-9H-carbazole-3-yl)-1-[2-methyl-4-(1-methoxypropane-2-yloxy)phenyl]acetone-1-(O-acetyl)oxime. The content of photopolymerization initiator (D-2) is preferably 1 part by mass or more and 25 parts by mass or less, relative to 100 parts by mass of soluble resin (A). Maintaining the content within this range is preferable in terms of good sensitivity and excellent resolution. (D) The photoacid generator (D-1) and photopolymerization initiator (D-2) in the photosensitizer can be used individually or in combination. The content of the photosensitizer (D) is preferably 0.01 parts by weight or more and 50 parts by weight or less, relative to 100 parts by weight of the soluble resin (A). Maintaining the content within this range is preferable in terms of good sensitivity, resolution, and storage stability. <Crosslinking Agent> The resin composition of the present invention may further contain a crosslinking agent. The crosslinking agent in the present invention refers to a component that crosslinks the (A) soluble resin or other components, and examples include compounds having at least two functional groups such as alkoxymethyl, hydroxymethyl, epoxy, and oxetyl. By containing a crosslinking agent, the (A) soluble resin or other components can be crosslinked, thereby improving the heat resistance, strength, and chemical resistance of the hardened film. Furthermore, by containing both the crosslinking agent and the (D-1) photoacid generator, the acid generated in the exposure zone causes the crosslinking agent to undergo a crosslinking reaction, resulting in a negative relief pattern that is insoluble in the exposure zone. Examples of compounds having at least two alkoxymethyl or hydroxymethyl groups include: DML-PC, DML-PEP, DML-OC, DML-OEP, DML-34X, DML-PTBP, DML-PCHP, DML-OCHP, DML-PFP, DML-PSBP, DML-POP, DML-MBOC, DML-MBPC, DML-MTrisPC, DML-BisOC-Z, DML-BisOCHP-Z, DML-BPC, DML-BisOC-P, DMOM-PC, DMOM-PTBP, DMOM-MBPC, TriML-P, TriML-35XL, TML-HQ, TML-BP, TML-pp-BPF, TML-BPE, TML-BPA, TML- BPAF, TML-BPAP, TMOM-BP, TMOM-BPE, TMOM-BPA, TMOM-BPAF, TMOM-BPAP, HML-TPPHBA, HML-TPHAP, HMOM-TPPHBA, HMOM-TPHAP (the above are trade names, manufactured by Honshu Chemical Industry Co., Ltd.), "NIKALAC" (registered trademark) MX-290, "NIKALAC" MX-280, "NIKALAC" MX-270, "NIKALAC" MX-279, "NIKALAC" MW-100LM, "NIKALAC" MX-750LM (the above are trade names, manufactured by Sanwa Chemical Co., Ltd.), etc. These compounds having at least two alkoxymethyl or hydroxymethyl groups can also be used in combination. Examples of compounds having at least two epoxy groups include: "Epolight" (registered trademark) 40E, "Epolight" 100E, "Epolight" 200E, "Epolight" 400E, "Epolight" 70P, "Epolight" 200P, "Epolight" 400P, and "Epolight" 1500N. P, "Epolight" 80MF, "Epolight" 4000, "Epolight" 3002 (all manufactured by Kyoei Chemical Co., Ltd.), "Denacol" (registered trademark) EX-212L, "Denacol" EX-214L, "Denacol" EX-216L, "Denacol" EX-850L (all manufactured by Nagase Chemical Co., Ltd.) Chemtex (manufactured by Chemtex), GAN, GOT (manufactured by Nippon Kayaku (co.k.), "Epikote" (registered trademark) 828, "Epikote" 1002, "Epikote" 1750, "Epikote" 1007, YX8100-BH30, E1256, E4250, E4275 (manufactured by Nippon Epoxy Resin (co.k.), " Epiclon (registered trademark) EXA-9583, HP4032 (manufactured by DIC Corporation), VG3101 (manufactured by Mitsui Chemicals), TEPIC (registered trademark) S, TEPIC G, TEPIC P (manufactured by Nissan Chemical Industries), Denacol EX-321L (manufactured by Nagase Chemtex Corporation), NC6000 (manufactured by Nippon Kayaku Corporation), Epotohto (registered trademark) YH-434L (manufactured by Toto Chemical Corporation), EPPN502H, NC3000 (manufactured by Nippon Kayaku Corporation), Epiclon (registered trademark) N695, HP7200 (manufactured by DIC Corporation), etc. Two or more of these compounds having at least two epoxy groups may also be used in combination. Examples of compounds having at least two oxocyclic butyl groups include: Eternacoll EHO, Eternacoll OXBP, Eternacoll OXTP, and Eternacoll OXMA (all manufactured by Ube Industries, Inc.). Combinations of two or more of these compounds having at least two oxocyclic butyl groups can also be used. The content of the crosslinking agent is preferably 5 parts by mass and less than 100 parts by mass, and more preferably 10 parts by mass and less than 90 parts by mass, relative to 100 parts by mass of soluble resin (A). By keeping the content within the aforementioned preferred range, good chemical resistance, excellent heat resistance, and superior strength are achieved. <Free Radical Polymerizing Compounds> The resin composition of the present invention may further contain free radical polymerizing compounds. In the present invention, free radical polymerizing compounds refer to components that undergo polymerization reactions under a free radical mechanism. By containing free radical polymerizing compounds and the (D-2) photopolymerization initiator, a free radical polymerization reaction is carried out in the exposure section to obtain a negative relief pattern that is insoluble in the exposure section. Examples of free radical polymerizable compounds include: trimethylolpropane tri(meth)acrylate, di-trimethylolpropane tri(meth)acrylate, di-trimethylolpropane tetra(meth)acrylate, pentaerythritol tri(meth)acrylate, pentaerythritol tetra(meth)acrylate, dipentaerythritol penta(meth)acrylate, dipentaerythritol hexa(meth)acrylate, tripentaerythritol hepta(meth)acrylate, tripentaerythritol octa(meth)acrylate, and 2,2-bis[4-(3-(meth)propene]. [Acryloxy-2-hydroxypropoxy]phenyl]propane, 1,3,5-tris((meth)propenyloxyethyl)isocyanuric acid, 1,3-bis((meth)propenyloxyethyl)isocyanuric acid, 9,9-bis[4-(2-(meth)propenyloxyethoxy)phenyl]fluorene, 9,9-bis[4-(3-(meth)propenyloxypropoxy)phenyl]fluorene, 9,9-bis(4-(meth)propenyloxyphenyl)fluorene, or acid-modified, ethylene oxide-modified, or propylene oxide-modified forms of these compounds. Combinations of two or more of these free radical polymerizable compounds may also be used. The content of the free radical polymerizable compound is preferably 10 parts by mass and 90 parts by mass, more preferably 20 parts by mass and 80 parts by mass, relative to 100 parts by mass of soluble resin (A). By achieving the aforementioned preferred content range, good sensitivity, excellent heat resistance, and superior strength are obtained. <Solubility Accelerator> The resin composition of the present invention may further contain a solubility accelerator. In the present invention, a solubility accelerator refers to a component that increases the solubility of the resin composition in an alkaline aqueous solution. By containing a solubility accelerator, the dissolution rate in the alkaline aqueous solution used as a developer increases, the dissolution contrast between the hardened and unhardened portions of the resin composition coating increases, and fine pattern processing is easily obtained. Examples of solubility promoters include: Bis-Z, BisOC-Z, BisOPP-Z, BisP-CP, Bis26X-Z, BisOTBP-Z, BisOCHP-Z, BisOCR-CP, BisP-MZ, BisP-EZ, Bis26X-CP, BisP-PZ, BisP-IPZ, BisCRIPZ, BisOCP-IPZ, BisOIPP-CP, Bis26X-IPZ, BisOTBP-CP, TekP-4HBPA (tetrakis P-DO-BPA), Tris P-HAP, TrisP-PA, TrisP-PHBA, TrisP-SA, TrisOCR-PA, BisOFP-Z, BisRS-2P, BisPG-26X, BisRS-3P, BisOC-OCHP, BisPC-OCHP, and Bis25X-O. CHP, Bis26X-OCHP, BisOCHP-OC, Bis236T-OCHP, Methylenetris-FR-CR, BisRS-26X, BisRS-OCHP (the above are trade names, manufactured by Honshu Chemical Industry Co., Ltd.), BIR-OC, BIP-PCBIR-PC, BIR-PTBP, BIR-PCHP, BIP-BIOC-F, 4PC, BIR-B IPC-F, TEP-BIP-A (trade names, manufactured by Asahi Organic Materials Co., Ltd.), 1,4-dihydroxynaphthalene, 1,5-dihydroxynaphthalene, 1,6-dihydroxynaphthalene, 1,7-dihydroxynaphthalene, 2,3-dihydroxynaphthalene, 2,6-dihydroxynaphthalene, 2,7-dihydroxynaphthalene, 2,4-dihydroxyquinoline, 2,6-dihydroxyquinoline, 2,3-dihydroxyquinoxaline, anthracene-1,2,10-triol, anthracene-1,8,9-triol, 8-quinolinol, and other phenolic compounds. Combinations of two or more of these solubility promoters can also be used. The content of the solubility accelerator is preferably 1 part by mass and 20 parts by mass or less than 100 parts by mass of soluble resin (A). By keeping the content within the aforementioned preferred range, good heat resistance is achieved, and fine patterning processability can be obtained. <Adhesion Improver> The resin composition of the present invention may further contain a adhesion improver. In the present invention, the adhesion improver refers to a component that enhances the adhesion between the resin composition film and the substrate. Examples of substrates include: Si substrates and SiO2 substrates. 2 substrate, SiN substrate, Al substrate, Cu substrate, Ti substrate, ITO substrate, etc. Examples of adhesion modifiers include: vinyltrimethoxysilane, vinyltriethoxysilane, epoxycyclohexylethyltrimethoxysilane, 3-glycidoxypropyltrimethoxysilane, 3-glycidoxypropyltriethoxysilane, p-styryltrimethoxysilane, 3-aminopropyltrimethoxysilane, 3-aminopropyltriethoxysilane, N-phenyl-3-aminopropyltrimethoxysilane, titanium chelating agents, aluminum chelating agents, and compounds obtained by reacting aromatic amine compounds with alkoxy-containing silicon compounds. Combinations of two or more of these adhesion modifiers can also be used. The content of the bonding modifier is preferably 0.1 parts by mass or more and 10 parts by mass or less, relative to 100 parts by mass of the total amount of resin components excluding solvent (C). <Surfactants> The resin composition of the present invention may further contain surfactants. In the present invention, surfactants refer to components that enhance the wettability of the resin composition to the substrate. Examples of surfactants include: Dow Corning Toray's SH, SD, and ST series; BYK-Chemie Japan's BYK series; Shin-Etsu Chemical's KP series; Nippon Yusen's DISFOAM series; DIC's MEGAFAC (registered trademark) series; Sumitomo 3M's FLUORAD series; Asahi Glass's SURFLON (registered trademark) series and AsahiGuard (registered trademark) series; and OMNOVA Solutions. Fluorinated surfactants such as PolyFox from Solution Inc., acrylic and / or methacrylic surfactants such as PolyFox from Kyoeisha Chemical Co., Ltd., and DISPARLON (registered trademark) from Kusumoto Chemical Co., Ltd. The surfactant content is preferably 0.001 parts by mass or more and 1 part by mass or less, relative to 100 parts by mass of the total amount of resin composition excluding solvent (C). <Curved Product> The cured product of the present invention is a cured product formed by curing the aforementioned resin composition. As long as the resin composition is cured by light or heat, the cured product can be of any form. Examples of light-based curing methods include curing by exposure to 50 mJ or more and 3,000 mJ or less using 365 nm i-rays, 405 nm h-rays, or 432 nm g-rays from a high-pressure mercury lamp. Examples of heat-based curing methods include curing by heat treatment at 150°C or higher and 500°C or lower for 5 minutes or more and 5 hours or less. The method for manufacturing the cured material includes: a step of coating the resin composition onto a substrate and drying it to form a resin film on the substrate; a step of exposing the resin composition film to light; a step of developing the resin composition film by removing the unexposed or exposed portions of the resin composition film using a developing solution; and a step of heat-treating the developed resin composition film to harden it. Examples of steps for forming a resin film on a substrate by coating the resin composition onto the substrate and drying it include: coating the resin composition onto the substrate using a spin coater, spray coater, screen coater, doctor blade coater, die coater, calender coater, meniscus coater, rod coater, roller coater, corner roller coater, gravure coater, slit coater, etc., and drying it at a temperature of 50°C to 150°C for 1 minute to 24 hours to form a resin composition film. Examples of steps for exposing the resin composition film include: exposing it to 50 mJ or more but less than 3,000 mJ using a high-pressure mercury lamp with i-rays at 365 nm, h-rays at 405 nm, and g-rays at 432 nm, through a mask having the desired pattern. The resin composition film exposed by these steps can then be baked after exposure. From the viewpoint of curability and adhesion to the substrate, baking after exposure is preferably at 50°C or more, and from the viewpoint of resolution, it is preferably at 150°C or less. The development process, which involves removing unexposed or exposed portions of the resin composition film using a developing solution, can include: spraying the developing solution onto the surface of the resin composition film; filling the surface of the resin composition film with the developing solution; immersing the resin composition film in the developing solution; or immersing and applying ultrasound. The developing conditions, such as the developing time, developing steps, and developing solution temperature, are all suitable for removing the unexposed or exposed portions and forming a pattern. A rinsing process is preferred after developing. The rinsing process is preferably performed by adding alcohols such as water, ethanol, and isopropanol, or ethyl lactate, propylene glycol monomethyl ether acetate, or a combination of two or more of these. As a step in curing the developed resin composition film by heat treatment, examples include heat treatment at 150°C or higher and 500°C for 5 minutes to 5 hours to form a hardened product. The heat treatment can be selected as either a method of selectively increasing the temperature in stages, or a method of continuously increasing the temperature within a selected temperature range. For the former, an example is heat treatment at 130°C and 200°C for 30 minutes each. For the latter, an example is a method of heating from room temperature to 400°C over 2 hours. <Electronic Components> The electronic component of the present invention includes the aforementioned hardened material. The hardened material can be used as an insulating film, protective film, or the like constituting the electronic component. Examples of electronic components include: active components containing semiconductors such as transistors, diodes, integrated circuits (ICs), and memory; and passive components such as resistors, capacitors, and inductors. Specific examples of hardened materials within electronic components include passivation films for semiconductors, surface protective films for semiconductor elements and thin-film transistors (TFTs), interlayer insulating films between rewiring in multilayer wiring for high-density mounting of 2 to 10 layers, insulating films and protective films for touch panel displays, and insulating layers for organic light-emitting diodes. Various other structures can also be employed. <Display Device> The display device of the present invention includes the aforementioned hardened material. The hardened material can be used as a planarization layer or a pixel segmentation layer constituting the display device. Examples of display devices include organic EL display devices having a planarization layer, a first electrode, a pixel segmentation layer, an organic electroluminescence (EL) layer, and a second electrode on a substrate, wherein the planarization layer and / or the pixel segmentation layer comprises the cured material of the present invention. Taking an active matrix type display device as an example, a TFT (thin-film transistor) and wiring located on the side of the TFT and connected to the TFT are provided on a substrate such as glass or a resin film. A planarization layer is provided on the TFT in a manner that covers unevenness, and a display element is disposed on the planarization layer. The display element and the wiring are connected via contact holes formed in the planarization layer. The cured material formed by curing the photosensitive resin composition of the present invention is preferably used as a planarization layer due to its excellent planarization properties and pattern dimensional stability. In particular, in recent years, the flexibility of organic EL display devices has become mainstream, and organic EL display devices with the aforementioned driving circuitry and a substrate comprising a resin film can also be used. [Examples] Hereinafter, examples are given to illustrate the present invention, but the present invention is not limited to these examples. First, the evaluation methods in each example and comparative example will be described. (1) Evaluation of the processability of the fine pattern of the negative resin composition containing (D-2) photopolymerization initiator The negative resin composition containing (D-2) photopolymerization initiator was coated on a copper substrate using a spin coater (Mikasa 1H-360S manufactured by Mikasa Co., Ltd.) and dried at 100°C for 3 minutes using a heating plate (Dainippon Screen SCW-636 manufactured by Dainippon Screen Co., Ltd.) to form a 10 μm coating. Using an alignment exposure machine (Canon PLA-501F manufactured by Canon Co., Ltd.), a photomask with patterns of L / S=30 μm / 30 μm, 20 μm / 20 μm, and 15 μm / 15 μm was used as the light source, and the exposure was performed at 200 mJ / cm 2 The copper substrate with the coating was exposed. The exposure amount was calculated by measuring the illuminance at 365 nm. Then, it was heated at 120°C for 1 minute, and developed using an automatic developing machine (AD-1200 manufactured by Takizawa Sangyo Co., Ltd.) with a 2.38% by mass tetramethylammonium hydroxide (TMAH) aqueous solution as the developing solution, in a 45-second, double-layer development process, followed by rinsing with pure water for 30 seconds. Then, the pattern processing section was observed using a flat panel display (FPD) microscope (MX61 manufactured by Olympus Co., Ltd.), and the minimum processable pattern size was checked. The processability of the fine pattern was evaluated based on the following criteria: Here, processability means that the opening size of the developed pattern is 95% or more of the size of the pattern on the photomask. A and B are considered acceptable, and C is considered unacceptable. A: Minimum pattern size is 15 μm; B: Minimum pattern size is 20 μm; C: Minimum pattern size is 30 μm. (2) Evaluation of the processability of fine patterns of positive resin compositions containing (D-1) photoacid generator: A positive resin composition containing (D-1) photoacid generator was coated onto a copper substrate using a spin coater (Mikasa 1H-360S, manufactured by Mikasa Co., Ltd.), and dried at 100°C for 3 minutes using a heating plate (Dainippon Screen SCW-636, manufactured by Dainippon Screen Co., Ltd.) to form a 10 μm coating. Using an alignment exposure machine (Canon PLA-501F, manufactured by Canon Co., Ltd.), a photomask with patterns of L / S=15 μm / 15 μm, 10 μm / 10 μm, and 5 μm / 5 μm was used as the light source, with an ultra-high pressure mercury lamp as the light source and an exposure temperature of 800 mJ / cm². 2The copper substrate with the coating was exposed. The exposure amount was calculated by measuring the illuminance at 365 nm. Then, using an automatic developing machine (AD-1200 manufactured by Takizawa Sangyo Co., Ltd.), development was performed twice in 45-second intervals using a 2.38% by mass tetramethylammonium hydroxide (TMAH) aqueous solution as the developing solution, followed by rinsing with pure water for 30 seconds. Then, the pattern processing section was observed using an FPD microscope (MX61 manufactured by Olympus Co., Ltd.), and the minimum pattern size that could be processed was checked. The processability of fine patterns was evaluated based on the following criteria: Here, processability means that the opening size of the developed pattern is 95% or more of the size of the pattern on the photomask. A and B are set as acceptable, and C is set as unacceptable. A: Minimum pattern size is 5 μm B: Minimum pattern size is 10 μm C: Minimum pattern size is 15 μm (3) Evaluation of the processability of the fine patterning of the negative resin composition containing (D-1) photoacid generator: The negative resin composition containing (D-1) photoacid generator was coated onto a copper substrate using a spin coater (Mikasa 1H-360S, manufactured by Mikasa Co., Ltd.), and dried at 120°C for 3 minutes using a heating plate (Dainippon Screen SCW-636, manufactured by Dainippon Screen Co., Ltd.) to form a 15 μm coating. Using an alignment exposure machine (Canon PLA-501F, manufactured by Canon Co., Ltd.), the patterning was performed through a photomask with L / S = 15 μm / 15 μm, 10 μm / 10 μm, and 5 μm / 5 μm patterns, with an ultra-high pressure mercury lamp as the light source and an exposure temperature of 500 mJ / cm². 2The copper substrate with the coating was exposed. The exposure amount was calculated by measuring the illuminance at 365 nm. Then, it was heated at 100°C for 3 minutes, and developed using an automatic developing machine (AD-1200 manufactured by Takizawa Sangyo Co., Ltd.) with a 2.38% by mass tetramethylammonium hydroxide (TMAH) aqueous solution as the developing solution, in a 30-second, double-layer development process, followed by rinsing with pure water for 30 seconds. Then, the pattern processing section was observed using an FPD microscope (MX61 manufactured by Olympus Co., Ltd.), and the minimum processable pattern size was checked. The processability of fine patterns was evaluated based on the following criteria: Here, "processable" means that the opening size of the developed pattern is 95% or more of the size of the pattern on the photomask. A to C are considered acceptable, and D is considered unacceptable. A: Minimum pattern size is 5 μm. B: Minimum pattern size is 10 μm. C: Minimum pattern size is 15 μm. D: Pattern size of 15 μm cannot be processed. (4) Evaluation of the adhesion of the non-photosensitive resin composition to the substrate: The non-photosensitive resin composition was coated onto a copper substrate using a spin coater (Mikasa 1H-360S, manufactured by Mikasa Ltd.), and a 10 μm coating was formed by heating and drying at 100°C for 3 minutes using a heating plate (Dainippon Screen SCW-636, manufactured by Dainippon Screen Ltd.). The copper substrate with the coating was then subjected to a 1-hour heat treatment using an inert oven (KOYO THERMO SYSTEM CLH-21CD-S, manufactured by KOYO THERMO SYSTEM Ltd.), with the oxygen concentration below 20 ppm and a heating rate of 3.5°C / min to 280°C. For the obtained hardened film, the cross-cutting method according to Japanese Industrial Standards (JIS) K5400-8.5 was used, with a single blade performing 10 columns and 10 rows of cross-cuts at 2 mm intervals. A peel test was conducted using cellophane adhesive tape, and the substrate adhesion was evaluated according to the following criteria. A and B were set as acceptable, and C, D, and E were set as unacceptable.A: The number of grids of the hardened film that adheres closely to the substrate after the test is 100. B: The number of grids of the hardened film that adheres closely to the substrate after the test is 80 or more and less than 100. C: The number of grids of the hardened film that adheres closely to the substrate after the test is 50 or more and less than 80. D: The number of grids of the hardened film that adheres closely to the substrate after the test is 20 or more and less than 50. E: The number of grids of the hardened film that adheres closely to the substrate after the test is less than 20. (5) Evaluation of substrate adhesion of negative resin composition containing (D-2) photopolymerization initiator: The negative resin composition containing (D-2) photopolymerization initiator was coated on a copper substrate using a spin coater (Mikasa (1H-360S) manufactured by Mikasa (1H-360S) and dried at 100°C for 3 minutes using a heating plate (Dainippon Screen (SCW-636) manufactured by Dainippon Screen (1H-636)) to form a 10 μm coating. Using an alignment exposure machine (PLA-501F manufactured by Canon Inc.), through a photomask with a square pattern of 100 μm × 100 μm, with an ultra-high pressure mercury lamp as the light source, at 200 mJ / cm². 2The copper substrate with the coating was exposed. The exposure amount was calculated by measuring the illuminance at 365 nm. Then, it was heated at 120°C for 1 minute and developed using an automatic developing machine (AD-1200 manufactured by Takizawa Sangyo Co., Ltd.) with a 2.38% by mass tetramethylammonium hydroxide (TMAH) aqueous solution as the developing solution, using a double-layer development method at 45 seconds, followed by rinsing with pure water for 30 seconds. Then, it was heated to 280°C for 1 hour in an inert oven (CLH-21CD-S manufactured by KOYO THERMO SYSTEM Co., Ltd.) at an oxygen concentration of 20 ppm or less, with the temperature increased at a rate of 3.5°C / min. The shear strength of the patterned hardened film was measured using a die shear tester (Dage Series 4000, manufactured by Nordson, Inc.) under the conditions of a 150 μm wide tool, a height of 1 μm from the copper substrate, and a speed of 15 μm / s. The average of 10 measurements was taken as the shear strength, and the substrate adhesion was evaluated based on the following criteria: A and B were considered acceptable, and C was considered unacceptable. A: Shear strength ≥ 300 mN; B: Shear strength ≥ 250 mN and < 300 mN; C: Shear strength < 250 mN. (6) Evaluation of substrate adhesion of positive resin composition containing (D-1) photoacid generator: A positive resin composition containing (D-1) photoacid generator was coated onto a copper substrate using a spin coater (Mikasa 1H-360S, manufactured by Mikasa Co., Ltd.), and dried at 100°C for 3 minutes using a heating plate (Dainippon Screen SCW-636, manufactured by Dainippon Screen Co., Ltd.) to form a 10 μm coating. An alignment exposure machine (Canon PLA-501F, manufactured by Canon Co., Ltd.) was used, with an ultra-high pressure mercury lamp as the light source and an exposure temperature of 800 mJ / cm², through a photomask with a square pattern of 100 μm × 100 μm. 2The copper substrate with the coating was exposed. The exposure amount was calculated by measuring the illuminance at 365 nm. Then, using an automatic developing machine (AD-1200 manufactured by Takizawa Sangyo Co., Ltd.), development was performed with a 2.38% by mass tetramethylammonium hydroxide (TMAH) aqueous solution as the developing solution, using a double-layer development method at 45 seconds, followed by rinsing with pure water for 30 seconds. Then, using an inert oven (CLH-21CD-S manufactured by KOYO THERMO SYSTEM Co., Ltd.), the temperature was increased to 280°C at a heating rate of 3.5°C / min with an oxygen concentration of less than 20 ppm, and then heat-treated for 1 hour. The shear strength of the pattern of the obtained hardened film was measured using a die shear tester (Dage-Series 4000 manufactured by Nordson Co., Ltd.) under the conditions of a 150 μm wide tool, a height of 1 μm from the copper substrate, and a speed of 15 μm / s. The average value of 10 measurements was used as the shear strength. The substrate adhesion was evaluated based on the following criteria. A and B were set as qualified, and C was set as unqualified. A: Shear strength of 300 mN or more B: Shear strength of 250 mN or more and less than 300 mN C: Shear strength less than 250 mN. (7) Evaluation of substrate adhesion of negative resin composition containing (D-1) photoacid generator The negative resin composition containing (D-1) photoacid generator was coated on a copper substrate using a spin coater (Mikasa 1H-360S manufactured by Mikasa Co., Ltd.) and dried at 120°C for 3 minutes using a heating plate (Dainippon Screen SCW-636 manufactured by Dainippon Screen Co., Ltd.) to form a 15 μm coating. Using an alignment exposure machine (Canon PLA-501F), through a photomask with a 100 μm × 100 μm square pattern, and with an ultra-high pressure mercury lamp as the light source, at 500 mJ / cm²... 2The copper substrate with the coating was exposed. The exposure amount was calculated by measuring the illuminance at 365 nm. Then, it was heated at 100°C for 1 minute and developed using an automatic developing machine (AD-1200 manufactured by Takizawa Sangyo Co., Ltd.) with a 2.38% by mass aqueous solution of tetramethylammonium hydroxide (TMAH) as the developing solution, using a double-layer development method at 30 seconds, followed by rinsing with pure water for 30 seconds. Then, it was heated to 200°C for 1 hour in an inert oven (CLH-21CD-S manufactured by KOYO THERMO SYSTEM Co., Ltd.) at an oxygen concentration of 20 ppm or less, with the temperature increased at a rate of 3.5°C / min. The shear strength of the pattern of the hardened film was measured using a grain shear tester (Dage-series 4000 manufactured by Nordson Corporation) under the conditions of a 150 μm wide tool, a height of 1 μm from the copper substrate, and a speed of 15 μm / s. The average value of 10 measurements was taken as the shear strength, and the substrate adhesion was evaluated based on the following criteria. A and B were set as acceptable, and C was set as unacceptable. A: Shear strength of 200 mN or more B: Shear strength of 150 mN or more but less than 200 mN C: Shear strength less than 150 mN. (8) Evaluation of storage stability After the resin composition was prepared, the viscosity at 25°C was measured using an E-type viscometer (TVE-25 manufactured by Toki Sangyo Corporation) after 12 to 24 hours, and the value was set as V. 1. Then, the resin composition was sealed and stored at room temperature (23°C) for 4 weeks. The viscosity was then measured and the value was set as V. 2. Set the viscosity increase rate (%) as (V 2-V 1) / V 1×100, evaluate storage stability based on the following criteria. A, B, and C are considered acceptable, and D is considered unacceptable. A: Viscosity increase rate less than 3% B: Viscosity increase rate ≥3% and less than 5% C: Viscosity increase rate ≥5% and less than 20% D: Viscosity increase rate ≥20%. [Synthetic Example 1: Synthesis of Polyhydroxystyrene (P1)] In a mixed solution containing 500 mL of tetrahydrofuran and 0.01 moles of butyllithium dibutyl as an initiator, a total of 20 g of p-tert-butoxystyrene and styrene were added at a mole ratio of 3:1, and polymerization was carried out while stirring at 120°C for 3 hours. The polymerization was stopped by adding 0.1 moles of methanol to the reaction solution. Next, to purify the polymer, the reaction mixture was injected into methanol, and the precipitated polymer was dried to obtain a white polymer. Then, it was dissolved in 400 mL of acetone, and a small amount of concentrated hydrochloric acid was added at 60 °C. After stirring for 7 hours, it was injected into water to allow the polymer to settle, thereby deprotecting p-tert-butoxystyrene and converting it to hydroxystyrene. After washing and drying, a purified copolymer of p-hydroxystyrene and styrene (P1) was obtained. [Synthesis Example 2 Synthesis of Polyimide Precursor (P2)] Under a dry nitrogen stream, 4,4'-oxydiphthalic anhydride (hereinafter referred to as ODPA) (21.72 g, 0.070 moles) and γ-butyrolactone (hereinafter referred to as GBL) were dissolved in GBL in a flask. Subsequently, 3-aminophenol (hereinafter referred to as MAP) (1.53 g, 0.014 mol), 1,3-bis(3-aminopropyl)tetramethyldisiloxane (hereinafter referred to as SiDA) (0.87 g, 0.0035 mol), and 2,2-bis(3-aminophenyl)hexafluoropropane (19.72 g, 0.059 mol) were added, and the mixture was stirred at 60 °C for 4 hours. After cooling the reaction solution, it was added to 2.5 L of water, and the resulting white precipitate was filtered. After washing three times with water, the precipitate was dried under vacuum at 80 °C for 24 hours to obtain the polyimide precursor (P2). [Synthesis Example 3: Synthesis of Polyimide Precursor (P3)] 2,2-bis(3-aminophenyl)hexafluoropropane (19.72 g, 0.059 mol) was replaced with 2,2-bis(3-amino-4-hydroxyphenyl)hexafluoropropane (hereinafter referred to as BAHF) (21.55 g, 0.059 mol). Otherwise, the procedure was the same as in Synthesis Example 2 to obtain the polyimide precursor (P3). [Synthesis Example 4: Synthesis of Polyimide (P4)] The reaction solution obtained in Synthesis Example 3 was further heated to 200°C and stirred for 4 hours. After cooling, the reaction solution was added to 2.5 L of water. The resulting white precipitate was filtered, washed three times with water, and then dried under vacuum at 80°C for 24 hours to obtain polyimide (P4).[Synthetic Example 5: Synthesis of Polyimide (P5)] Under a dry nitrogen stream, 30.03 g (0.1 mol) of 4-(2,5-dioxotetrahydrofuran-3-yl)-1,2,3,4-tetrahydronaphthalene-1,2-dicarboxylic acid dianhydride (hereinafter referred to as TDA-100) was added to 100 g of GBL and stirred at 60 °C to dissolve. Then, 0.55 g (0.005 mol) of MAP and 30.1 g (0.09 mol) of 2,2-bis(3-aminophenyl)hexafluoropropane were added, and the mixture was stirred at 60 °C for 1 hour. The temperature was then raised to 200 °C and stirred for 4 hours. The precipitate was then added to 3 L of cooled reaction solution water to precipitate the precipitate. The precipitate was collected by filtration, washed three times with water, and dried under vacuum at 80 °C for 5 hours to obtain polyimide (P5). [Synthesis Example 6: Synthesis of Polyimide (P6)] 2,2-bis(3-aminophenyl)hexafluoropropane (30.08 g, 0.09 mol) was replaced with BAHF (32.96 g, 0.09 mol), and the process was otherwise identical to that in Synthesis Example 5 to obtain polyimide (P6). [Synthesis Example 7: Synthesis of Polyimide Precursor (P7)] ODPA (31.02 g, 0.10 mol) was dissolved in 200 g of GBL under a dry nitrogen stream. BAHF (32.96 g, 0.09 mol: 90 mol% relative to all amines and their derivatives) was added, and the mixture was stirred at 20°C for 1 hour, followed by stirring at 50°C for 2 hours. Then, MAP (1.09 g, 0.01 mol: 10 mol% relative to all amines and their derivatives) was added, and the mixture was stirred at 50°C for 2 hours. Then, a small amount of a solution of N,N-dimethylformamide dimethyl acetal (21.5 g, 0.18 moles) diluted with 20 g of GBL was added each time, and the mixture was stirred at 50°C for 3 hours. The solution was then added to 3 L of cooled reaction water to precipitate the precipitate. The precipitate was collected by filtration, washed three times with water, and dried under vacuum at 80°C for 5 hours to obtain the polyimide precursor (P7). [Synthetic Example 8: Synthesis of Polybenzoxazole Precursor (P8)] Under a stream of dry nitrogen, 22.93 g (0.100 moles) of 1,1'-(4,4'-oxybenzoyl)diimidazole (hereinafter referred to as PBOM) was dissolved in 234.67 g of NMP at 60°C. MAP (1.09 g, 0.010 moles) and 5 g of NMP were added, and the mixture was reacted at 85°C for 15 minutes. Then, 32.55 g of 6FAP and 0.105 mol of NMP were added, and the mixture was reacted at 85°C for 3 hours. After the reaction was complete, the mixture was cooled to room temperature, and the solution was added to 3 L of water to obtain a white precipitate. The precipitate was collected by filtration, washed three times with water, and then dried in a ventilated dryer at 50°C for 3 days to obtain a powder of polybenzoxazole precursor (P8).[Synthesis Example 9: Synthesis of Polybenzoxazole (P9)] The reaction solution obtained in Synthesis Example 8 was further heated to 200°C and stirred for 4 hours. After cooling, the reaction solution was added to 2.5 L of water and the resulting white precipitate was filtered. After washing three times with water, the precipitate was dried under vacuum at 80°C for 24 hours to obtain polybenzoxazole (P9). [Synthesis Example 10: Synthesis of Organic Salt (M1)] Under a stream of dry nitrogen, ODPA (6.20 g, 0.020 moles) and 200 g of deionized water were added to a flask and stirred at 80°C to hydrolyze the ODPA. Then, 2,2-bis(3-aminophenyl)hexafluoropropane (6.68 g, 0.020 moles) was added and stirred at 80°C for 1 hour. The resulting yellowish-white precipitate was filtered, washed three times with water, and dried under vacuum at 80°C for 24 hours to obtain the organic salt (M1). [Synthesis Example 11 Synthesis of Organic Salt (M2)] The organic salt (M2) was obtained in the same manner as in Synthesis Example 10, except that 2,2-bis(3-aminophenyl)hexafluoropropane (6.68 g, 0.020 mol) was replaced with BAHF (7.33 g, 0.020 mol). The names of the compounds used in the examples and comparative examples are shown below. [Synthesis Example 12: Synthesis of Organic Salt (M3)] 2,2-bis(3-aminophenyl)hexafluoropropane (6.68 g, 0.020 mol) was replaced with 2,2-bis(3-amino-4-hydroxyphenyl)propane (5.17 g, 0.020 mol), otherwise the procedure was the same as in Synthesis Example 10 to obtain organic salt (M3). [Synthesis Example 13: Synthesis of Organic Salt (M4)] ODPA (6.20 g, 0.02 mol) was replaced with TDA-100 (6.01 g, 0.02 mol), otherwise the procedure was the same as in Synthesis Example 10 to obtain organic salt (M4). [Synthesis Example 14: Synthesis of Organic Salt (M5)] ODPA (6.20 g, 0.02 mol) was replaced with TDA-100 (6.01 g, 0.02 mol), and the procedure was otherwise identical to that in Synthesis Example 11 to obtain organic salt (M5). [Synthesis Example 15: Synthesis of Organic Salt (M6)] ODPA (6.20 g, 0.02 mol) was replaced with TDA-100 (6.01 g, 0.02 mol), and the procedure was otherwise identical to that in Synthesis Example 12 to obtain organic salt (M6). [Synthesis Example 16: Synthesis of Organic Salt (M7)] ODPA (6.20 g, 0.02 mol) was replaced with 4,4'-dicarboxylic acid diphenyl ether (5.16 g, 0.02 mol), and the procedure was otherwise identical to that in Synthesis Example 10 to obtain organic salt (M7). [Synthesis Example 17: Synthesis of Organic Salt (M8)] ODPA (6.20 g, 0.02 mol) was replaced with 4,4'-dicarboxylic diphenyl ether (5.16 g, 0.02 mol), otherwise the procedure was the same as in Synthesis Example 11 to obtain organic salt (M8). [Synthesis Example 18: Synthesis of Organic Salt (M9)] ODPA (6.20 g, 0.02 mol) was replaced with 4,4'-dicarboxylic diphenyl ether (5.16 g, 0.02 mol), otherwise the procedure was the same as in Synthesis Example 12 to obtain organic salt (M9). [Synthetic Example 19: Synthesis of Organic Salt (M10)] ODPA (6.20 g, 0.020 mol) was replaced with phthalic anhydride (2.96 g, 0.020 mol), and 2,2-bis(3-aminophenyl)hexafluoropropane (6.68 g, 0.020 mol) was replaced with aniline (1.86 g, 0.020 mol). Otherwise, the procedure was the same as in Synthetic Example 10 to obtain the organic salt (M10). The names of the compounds used in the examples and comparative examples are shown below.<(C) = Solvent> GBL: γ-Butyrolactone EL: Ethyl lactate <(D-1) Photopolymerization Acid Generator> HA5-170: HA5-170 (manufactured by Toyo Gosei Co., Ltd.) CPI-310FG: CPI-310FG (manufactured by San-Apro Co., Ltd.) <(D-2) Photopolymerization Initiator> OXE02: "Irgacure" (registered trademark) OXE02 (manufactured by BASF Japan Co., Ltd.) <Free Radical Polymerizing Compound> DCP-A: Light Acrylate DCP-A (manufactured by Kyoeisha Chemical Co., Ltd.) BP-6EM: Light ester BP-6EM (manufactured by Kyoeisha Chemical Co., Ltd.) MOI-BP: Karenz MOI-BP (manufactured by Showa Denko Co., Ltd.) <Crosslinking Agent> MW-100LM: "NIKALAC" (registered trademark) MW-100LM (manufactured by Sanwa Chemical Co., Ltd.) MX-270: "NIKALAC" (registered trademark) MX-270 (manufactured by Sanwa Chemical Co., Ltd.) TEPIC-VL: TEPIC-VL (manufactured by Nissan Chemical Industries, Ltd.) <Adhesion Modifier> KBM403 (manufactured by Shin-Etsu Chemical Industry Co., Ltd.) <Surfactant> PF77: Polyflow No.77 (manufactured by Kyoeisha Chemical Co., Ltd.) [Example 1] 3.5 g of polyhydroxystyrene (P1), 0.0175 g of organic salt (M1), 2.1 g of GBL, and 3.1 g of EL were mixed and pressure filtered using a filter with a retention particle size of 1 μm to prepare a non-photosensitive resin composition. The substrate adhesion and storage stability of the non-photosensitive resin composition were evaluated according to the evaluation methods described in (4) and (8). [Examples 2-19] Non-photosensitive resin compositions were prepared in the same manner as in Example 1, using (A) soluble resin, (B) organic salt, and (C) solvent as shown in Table 1. The substrate adhesion and storage stability of the non-photosensitive resin compositions were evaluated according to the evaluation methods described in (4) and (8). [Comparative Examples 1-5] Non-photosensitive resin compositions were prepared in the same manner as in Example 1, using (A) soluble resin, (B) organic salt, and (C) solvent as shown in Table 1. The substrate adhesion and storage stability of the non-photosensitive resin compositions were evaluated according to the evaluation methods described in (4) and (8). [Table 1] The evaluation results of Examples 1 to 19 and Comparative Examples 1 to 5 are shown in Table 2. [Table 2] [Example 20] Under yellow light, 3.5 g of polyhydroxystyrene (P1), 0.0175 g of organic salt (M1), 0.5 g of OXE02, 0.5 g of DCP-A, 1.5 g of BP-6EM, 0.5 g of MOI-BP, 1.0 g of MW-100LM, 0.5 g of MX-270, 0.25 g of KBM403, 0.003 g of PF77, 2.1 g of GBL, and 3.1 g of EL were mixed and pressure filtered using a filter that retains a particle size of 1 μm to prepare a negative resin composition. The micropatterning processability, substrate adhesion, and storage stability of the negative resin composition containing the (D-2) photopolymerization initiator were evaluated according to the evaluation methods described in (1), (5), and (8). [Examples 21] to [Examples 40] Negative resin compositions containing photopolymerization initiator (D-2) were prepared in the same manner as in Example 20, using (A) soluble resin, (B) organic salt, (C) solvent, (D) photosensitizer, and other components as described in Tables 3-1 and 3-2. The micropatterning processability, substrate adhesion, and storage stability of the negative resin compositions containing photopolymerization initiator (D-2) were evaluated according to the evaluation methods described in (1), (5), and (8). [Comparative Examples 6] to [Comparative Examples 10] Negative resin compositions containing photopolymerization initiator (D-2) were prepared in the same manner as in Example 20, using (A) soluble resin, (B) organic salt, (C) solvent, (D) photosensitizer, and other components as described in Table 3-2. The micropatterning processability, substrate adhesion, and storage stability of the negative resin compositions containing photopolymerization initiator (D-2) were evaluated according to the evaluation methods described in (1), (5), and (8). [Table 3-1] [Table 3-2] The evaluation results of Examples 20 to 40 and Comparative Examples 6 to 10 are shown in Table 4. [Table 4] [Example 41] Under yellow light, 3.5 g of polyhydroxystyrene (P1), 0.0175 g of organic salt (M1), 0.4 g of HA5-170, 0.17 g of TrisP-PA, 0.34 g of MX-270, 0.33 g of KBM1403, 4.3 g of GBL, and 2.4 g of EL were mixed and pressure filtered using a filter with a particle size retention of 1 μm to prepare a positive resin composition containing (D-1) photoacid generator. The micropatterning processability, substrate adhesion, and storage stability of the positive resin composition containing (D-1) photoacid generator were evaluated according to the evaluation methods described in (2), (6), and (8). [Examples 42-61] A positive resin composition containing photoacid generator (D-1) was prepared in the same manner as in Example 41, using (A) soluble resin, (B) organic salt, (C) solvent, (D) photosensitizer, and other components as described in Tables 5-1 and 5-2. The fine patterning processability, substrate adhesion, and storage stability of the positive resin composition containing photoacid generator (D-1) were evaluated according to the evaluation methods described in (2), (6), and (8). [Comparative Examples 11-15] A positive resin composition containing photoacid generator (D-1) was prepared in the same manner as in Example 41, using (A) soluble resin, (B) organic salt, (C) solvent, (D) photosensitizer, and other components as described in Table 5-2. The fine patterning processability, substrate adhesion, and storage stability of the positive resin composition containing photoacid generator (D-1) were evaluated according to the evaluation methods described in (2), (6), and (8). [Table 5-1] [Table 5-2] The evaluation results of Examples 41 to 61 and Comparative Examples 11 to 15 are shown in Table 6. [Table 6] [Example 62] Under yellow light, 2.35 g of polyhydroxystyrene (P1), 0.0118 g of organic salt (M1), 0.17 g of CPI-310FG, 3.0 g of TEPIC-VL, 0.20 g of KBM403, and 10 g of GBL were mixed and pressure filtered using a filter with a particle size retention of 1 μm to prepare a negative resin composition containing (D-1) photoacid generator. The micropatterning processability, substrate adhesion, and storage stability of the negative resin composition containing (D-1) photoacid generator were evaluated according to the evaluation methods described in (3), (7), and (8). [Examples 63-68] A negative resin composition containing the photoacid generator (D-1) was prepared in the same manner as in Example 62, using (A) soluble resin, (B) organic salt, (C) solvent, (D) photosensitizer, and other components as described in Table 7. The fine patterning processability, substrate adhesion, and storage stability of the positive resin composition containing the photoacid generator (D-1) were evaluated according to the evaluation methods described in (3), (7), and (8). [Comparative Examples 16-18] A negative resin composition containing the photoacid generator (D-1) was prepared in the same manner as in Example 62, using (A) soluble resin, (B) organic salt, (C) solvent, (D) photosensitizer, and other components as described in Table 7. The fine patterning processability, substrate adhesion, and storage stability of the positive resin composition containing the photoacid generator (D-1) were evaluated according to the evaluation methods described in (3), (7), and (8). [Table 7] The evaluation results of Examples 62 to 68 and Comparative Examples 16 to 18 are shown in Table 8. [Table 8] [Industrial Applicability] The cured material formed by curing the resin composition of the present invention can be used as an insulating film or protective film constituting electronic components, or as a planarization layer or pixel division layer constituting a display device. Examples of electronic components include active components having semiconductors such as transistors, diodes, integrated circuits (ICs), and memory, as well as passive components such as resistors, capacitors, and inductors. More specifically, it is preferably used as a passivation film for semiconductors, a surface protective film for semiconductor elements, TFTs (Thin Film Transistors), an interlayer insulating film between rewiring in multilayer wiring for high-density mounting of 2 to 10 layers, an insulating film or protective film for touch panel displays, and an insulating layer for organic electric field light-emitting elements. Various other structures can also be used. Examples of display devices include organic EL display devices having a planarization layer, a first electrode, a pixel division layer, an organic EL layer, and a second electrode on a substrate, and where the planarization layer and / or the pixel division layer contains the cured material of the present invention. Taking an active-matrix display device as an example, a TFT (thin-film transistor) and wiring located on the side of the TFT and connected to the TFT are formed on a substrate such as glass or resin film. A planarization layer is formed on the substrate in a manner that covers unevenness, and then a display element is disposed on the planarization layer. The display element and the wiring are connected through contact holes formed in the planarization layer. none none

Claims

1. A resin composition comprising (A) a soluble resin, (B) an organic salt and (C) a solvent, wherein the (B) organic salt is an organic salt formed from an organic compound having a carboxyl group and an organic compound having an amine group, and the (B) organic salt is 0.01 to 10 parts by mass relative to 100 parts by mass of the (A) soluble resin, and the (B) organic salt contains an organic salt having a structure represented by formula (6) or formula (7): (In formula (6), R14 represents a tetravalent organic group having 4 to 40 carbon atoms; R15 represents a hydrogen atom or a monovalent organic group having 1 to 10 carbon atoms; R16 represents a divalent organic group having 1 to 40 carbon atoms); (In formula (7), R17 represents a divalent organic group having 1 to 40 carbon atoms; wherein, R17 does not contain a carboxyl group or a carboxylic acid ester group; R18 represents a divalent organic group having 1 to 40 carbon atoms), the (A) soluble resin contains at least one soluble resin selected from the group consisting of a polyimide having the structure represented by formula (1), a polybenzoxazole having the structure represented by formula (3), a polyimide precursor having the structure represented by formula (4) and g in formula (4) being 2, a polybenzoxazole precursor having the structure represented by formula (4) and g in formula (4) being 0, and copolymers thereof, (in formula (1), R1 represents a tetravalent organic group having 4 to 40 carbon atoms; R2 represents the structure represented by formula (2)). (In formula (2), R3 is represented by a single bond, -O-, -C(CH3)2-, and -C(CF3)2-; R4 and R5 represent monovalent organic groups with 1 to 20 carbon atoms; a and b represent integers 1 to 4 independently; c and d represent integers 0 to 1 independently; * represents a chemical bond), (In formula (3), R6 is represented by a single bond, -O-, -C(CH3)2-, and -C(CF3)2-; R7 represents divalent organic groups with 4 to 40 carbon atoms), (In formula (4), R8 represents divalent to quadrivalent organic groups with 4 to 40 carbon atoms; R9 represents the structure represented by formula (5); R10 represents a hydrogen atom or a monovalent organic group with 1 to 20 carbon atoms; g represents 0 or 2), (In formula (5), R11 is represented by a single bond, -O-, -C(CH3)2-, and -C(CF3)2-; R12 and R13 represent monovalent organic groups with carbon numbers from 1 to 20; k and l represent integers from 1 to 4, respectively; m and n represent integers from 0 to 1, respectively; * represents a chemical bond).

2. The resin composition as claimed in claim 1 further contains (D) a photosensitizer.

3. The resin composition as claimed in claim 1, wherein R16 in formula (6) and R18 in formula (7) are structures represented by formula (8), (in formula (8), R19 is represented by a single bond, -O-, -C(CH3)2-, -C(CF3)2-, R20 and R21 represent monovalent organic groups with 1 to 20 carbon atoms; o and p each independently represent integers 1 to 4, q and r each independently represent integers 0 to 1; * represents a chemical bond).

4. The resin composition as claimed in claim 3, wherein R19 in formula (8) is -C(CF3)2-.

5. A hardened material, which is formed by hardening a resin composition as described in any one of claims 1 to 4.

6. An electronic component comprising the hardened material as described in claim 5.

7. A display device comprising the hardened material as described in claim 5.