Bonding apparatus, bonding method, and article manufacturing method

Abstract

The present invention provides a bonding apparatus for performing a bonding process to bond a second object to one of a plurality of regions in a first object to be bonded, comprising: a holder configured to hold the second object; a surface treatment apparatus configured to perform a surface treatment including activating a surface state of a target bonding surface of the second object held by the holder; and a controller configured to control the bonding process by performing the surface treatment on the second object via the surface treatment apparatus, such that the second object is bonded to one of the plurality of regions while held by the holder.

Description

Bonding Equipment, Bonding Method, and Article Manufacturing Method The present invention relates to bonding equipment, a bonding method, and an article manufacturing method. The method proposed in Japanese Patent Laid-Open No. 2013-243333 is a method of performing a surface activation process and a hydrophilicity process on each of a substrate and a wafer (die), then temporarily bonding the substrate and the wafer and performing heat treatment, so as to obtain a predetermined conductivity or bonding strength between the substrate and the wafer. When bonding a substrate (the first object to be bonded) and a wafer (the second object to be bonded), the longer the time from a surface treatment such as a surface activation process or a hydrophilicity process on the wafer to the bonding process between the wafer and the substrate, the lower the bonding strength tends to be. Therefore, it is required to shorten the time from the surface treatment to the bonding process as much as possible. In the method described in Japanese Patent Laid-Open No. 2013-243333, a surface treatment device for performing a surface activation process and a hydrophilicity process, a bonding device for bonding the wafer and the substrate, and a transport unit for transporting a plurality of wafers from the surface treatment device to the bonding device are provided individually. Therefore, during the process of transporting a plurality of wafers from the surface treatment device to the bonding device, the surface state of each wafer may change, and the bonding strength may be insufficient. The present invention provides a technique that is advantageous in terms of the bonding strength between a first object to be bonded and a second object to be bonded, for example. According to one aspect of the present invention, there is provided a bonding equipment for performing a bonding process, for bonding a second object to be bonded to one of a plurality of regions in a first object to be bonded, including: a holder configured to hold the second object; a surface treatment device configured to perform a surface treatment, which includes activating the surface state of a target bonding surface of the second object held by the holder; and a controller configured to control the bonding process by performing the surface treatment on the second object by the surface treatment device, such that the second object is bonded to one of the plurality of regions while the second object is held by the holder. Further features of the present invention will become apparent from the following description of exemplary embodiments with reference to the accompanying drawings. Hereinafter, embodiments will be described in detail with reference to the drawings. Note that the following embodiments are not intended to limit the scope of the invention claimed. A plurality of features are described in the embodiments, but the invention does not require all of these features, and a plurality of such features can be appropriately combined. In addition, in the accompanying drawings, the same or similar configurations are given the same reference numerals, and repeated descriptions thereof are omitted. In the specification and the accompanying drawings, directions will be represented in the XYZ coordinate system, where the direction parallel to the surface of the first object to be joined is defined as the XY plane. The directions parallel to the X-axis, Y-axis, and Z-axis of the XYZ coordinate system are defined as the X direction, Y direction, and Z direction, respectively. The rotation about the X-axis, the rotation about the Y-axis, and the rotation about the Z-axis are defined as θX, θY, and θZ, respectively. The control or drive (movement) with respect to the X-axis, Y-axis, and Z-axis means the control and drive (movement) with respect to the direction parallel to the X-axis, the direction parallel to the Y-axis, and the direction parallel to the Z-axis, respectively. Additionally, the control or drive with respect to the θX-axis, θY-axis, and θZ-axis means the control or drive with respect to the rotation about the axis parallel to the X-axis, the rotation about the axis parallel to the Y-axis, and the rotation about the axis parallel to the Z-axis. In the embodiments described later, an example is given in which a wafer (substrate) on which a semiconductor device is formed is used as the first object to be joined, and a die (chip) obtained by dividing a wafer (on which the semiconductor device is formed and which is to be used as the second object to be joined) into pieces. However, the first object and the second object are not limited thereto, and various changes and modifications can be made within the scope of the present invention. Examples of the first object, in addition to the wafer on which the semiconductor device is formed, are a silicon wafer (a silicon wafer on which wiring is formed), a glass wafer (a glass panel on which wiring is formed), an organic panel (PCB) on which wiring is formed, and a metal panel. The first object can be a wafer to which one or more dies have been joined. In addition, examples of the second object, in addition to the die obtained by dividing the wafer on which the semiconductor device is formed into pieces, also include a stack of dies, a small piece of material, an optical element, MEMS, and a structure. In the embodiments described later, various temporary or permanent joining methods can be applied as the joining method of the first object and the second object. Examples of the joining method are joining using an adhesive, temporary joining using a temporary adhesive, joining by hybrid bonding, atomic diffusion bonding, vacuum bonding, and bump bonding. Next, an industrial application example of the embodiments described later will be described. The first application example is the manufacture of a stacked memory. In the case where the joining device according to the embodiments described later is applied to the manufacture of a stacked memory, a wafer (substrate) on which a memory as a semiconductor device is formed is used as the first object, and a die (chip) on which a memory is formed is used as the second object. For example, when manufacturing a stacked memory having eight memory layers, the second object (die) formed as the eighth memory layer is joined to the first object (substrate) that already has seven memory layers. Note that the last layer of the stacked memory may not be a memory layer, but a layer on which a driver for driving the memory is formed. The second application example is the heterogeneous integration of processors. The mainstream of traditional processors is the system-on-chip (SoC), in which logic circuits, static random access memory (SRAM), etc. are formed in a single semiconductor element. In contrast, in heterogeneous integration, by applying the optimal process to each element, plural types of elements are formed from individual wafers and bonded together to manufacture a processor. This can achieve cost reduction and yield improvement of the processor. When the bonding device of the embodiment described later is applied to heterogeneous integration, the wafer (substrate) on which a logic device as a semiconductor device is formed is used as the first object. The separated dies (wafers) after detection (such as SRAM, antenna, or driver) are used as the second object. For example, in heterogeneous integration, different types of dies are bonded in sequence, so the objects bonded to the first object increase in sequence. More specifically, when a die with SRAM is bonded to a logic wafer, the logic wafer is the first object, and the die with SRAM is the second object. When a die with an element to be formed on the SRAM is bonded to the die with SRAM, the die with the logic wafer and SRAM is the first object, and the die with the element is the second object. Note that when plural dies are bonded overlapping each other, as for the bonding order, it is preferably started from the thin die so that the bonding head does not interfere with the bonded die. The third application example is 2.5D bonding using a silicon interposer. A silicon interposer is a silicon wafer on which wirings are formed. 2.5D bonding is a method of bonding plural types of dies to the silicon interposer and electrically connecting the plural types of dies by the wirings on the silicon interposer. When the bonding device according to the embodiment described later is applied to 2.5D bonding, the silicon wafer on which wirings are formed is used as the first object, and the separated dies are used as the second object. In 2.5D bonding, (for example) plural types of dies are bonded to the silicon interposer, so sometimes the structure of the silicon interposer to which one or more dies have already been bonded is treated as the first object. Note that when plural dies are bonded to the silicon interposer, as for the bonding order, it is preferably started from the thin die so that the bonding head does not interfere with the bonded die. The fourth application example is 2.1D bonding using an organic interposer or a glass interposer. The organic interposer is an organic panel (PCB substrate or CCL substrate) used as a packaging substrate, on which wirings are formed. The glass interposer is a glass panel on which wirings are formed. 2.1D bonding is a method of bonding plural types of dies to an organic interposer or a glass interposer and electrically bonding the plural types of dies through the wirings on the interposer. In the case of applying the bonding apparatus according to an embodiment described later to 2.1D bonding, in 2.1D bonding using an organic interposer, the organic panel on which wirings are formed is used as the first object, and the separate dies are used as the second object. On the contrary, in 2.1D bonding using a glass interposer, the glass panel on which wirings are formed is used as the first object, and the separate dies are used as the second object. For example, in 2.1D bonding, plural types of dies are bonded to an organic interposer or a glass interposer, and thus, sometimes, the structure of the organic interposer or the glass interposer to which one or more dies have been bonded is treated as the first object. Note that when bonding plural dies to the interposer, regarding the bonding order, it is preferable to start bonding from the thin dies so that the bonding head does not interfere with the bonded dies. The fifth application example is temporary bonding in a fan-out package manufacturing process. For example, the fan-out package, as an advanced package applied to a semiconductor manufacturing process, includes a fan-out wafer-level package and a fan-out panel-level package. The fan-out wafer-level package is a process of using a molding resin to package and reconstruct separate dies into a wafer shape. The fan-out panel-level package is a process of using a molding resin to package and reconstruct separate dies into a panel shape. In such a fan-out package, a redistribution from the die to the bump is formed, or a redistribution for connecting different types of dies is formed on the molded reconstructed substrate. At this time, if the die array accuracy is low, it may be difficult to accurately align the redistribution pattern to the die when transferring the redistribution pattern using a step-and-repeat exposure apparatus. For this reason, it is necessary to accurately arrange plural dies in the fan-out package. In the case of applying the bonding apparatus according to an embodiment described later to the fan-out package manufacturing process, a metal panel is used as the first object, and the separate dies are used as the second object. More specifically, the bonding apparatus is used to temporarily and serially bond the separate dies to the metal panel by a temporary adhesive. After that, the plural dies temporarily bonded to the metal panel are molded into a wafer shape or a panel shape by a molding apparatus, and are peeled off from the metal panel after molding. Thus, a reconstructed wafer or a reconstructed panel on which plural dies are arranged is manufactured. Note that in the fan-out package manufacturing process, the array of plural dies may be changed in the molding process. Therefore, when temporarily bonding plural dies to the metal panel using the bonding apparatus, it is preferable to adjust the bonding position of each die on the metal panel to correct the change in the array caused by the molding process. The sixth application example is heterogeneous substrate bonding. For example, in an infrared image sensor, InGaAs, which is called a high-sensitivity material, is used for sensor units configured to receive light, and silicon capable of achieving high-speed processing is used for logic circuits configured to capture data. Therefore, a high-sensitivity high-speed infrared image sensor can be manufactured. However, InGaAs crystals can currently only be mass-produced into wafers with a diameter as small as 4 inches, which is smaller than the mainstream 300-mm silicon wafers. Therefore, a method of bonding grains obtained by slicing an InGaAs substrate into pieces to a 300-mm silicon wafer on which a logic circuit is formed has been proposed. The bonding device according to the embodiment described later can also be applied to heterogeneous substrate bonding for bonding substrates made of different materials and having different sizes. When the bonding device is applied to heterogeneous substrate bonding, a large-diameter substrate such as a silicon wafer is used as the first object, and grains (chips) of a material such as InGaAs are used as the second object. Note that the grains (chips) of a material such as InGaAs can be crystal slices and are preferably cut into a rectangular shape. <First Embodiment> The first embodiment according to the present invention will be described. FIG. 1 is a schematic view showing a bonding device 100A according to the first embodiment. In FIG. 1, the direction perpendicular to the upper surface (target bonding surface) of the wafer 6 held by the wafer stage 43 is defined as the Z direction, and the directions orthogonal to each other in the plane parallel to the upper surface of the wafer 6 are defined as the X direction and the Y direction. The bonding device 100A is a device for sequentially bonding grains 51, which are the second object, to each of a plurality of regions on the wafer 6 (substrate), which is the first object. The plurality of grains 51 are supported by a dicing frame 5 as a support member. More specifically, the plurality of grains 51 are arranged on a dicing tape adhered to the dicing frame 5. As shown in FIG. 1, the bonding device 100A of the present embodiment includes a pickup unit 3, a bonding unit 4, and a controller CNT. The pickup unit 3 and the bonding unit 4 are mounted on a base 1 buffered by a fixing base 2. In this embodiment, the pickup unit 3 and the bonding unit 4 are mounted on the same base 1, but they can also be separately mounted on individual bases. The pickup unit 3 includes a pickup head 31, a release head 32, and a frame holder 33. The pickup unit 3 picks up the chips 51 one by one from the dicing tape adhered to the dicing frame 5. The frame holder 33 holds the dicing frame 5. The release head 32 pushes up the target chip 51 from the back side of the dicing tape adhered to the dicing frame 5, so that the target chip 51 to be picked up protrudes upward from the remaining chips. At this time, the target chip 51 is partially peeled off from the dicing tape. The pickup head 31 holds (adsorbs) the target chip 51 pushed up by the release head 32 by means of vacuum suction or the like, and peels off (separates) the target chip 51 from the dicing tape. The pickup head 31 moves from the pickup unit 3 to the bonding unit 4 and transfers the chip 51 to the bonding head 423 described later. In the present embodiment, the target bonding surface (the surface to be bonded) of the chip 51 transferred to the bonding head 423 faces upward. Here, the pickup head 31 contacts the target bonding surface of the chip 51. Therefore, it is preferably that the pickup head 31 does not generate static electricity and prevents foreign matter from adhering. More specifically, the pickup head 31 is discharged by an ionizer, and / or a needle pattern or an annular pattern is formed on the holding surface of the pickup head 31 for the chip 51 to reduce the contact area. A non-contact chuck such as a Bernoulli chuck or a chuck that holds the edge surface or the side surface of the chip can be used. The bonding unit 4 includes a stage base 41 and an upper base 42, and a wafer stage 43 is mounted on the stage base 41. The wafer stage 43 (the first holder) is configured to hold the wafer 6 and move on the stage base 41. More specifically, the wafer stage 43 includes a wafer chuck 433 that holds the wafer 6 (the substrate) by means of vacuum suction or the like, and a drive mechanism 436 that drives the wafer chuck 433 (the wafer 6). The drive mechanism 436 includes an actuator such as a linear motor and is configured to drive the wafer 6 in the X direction, the Y direction, and the θZ direction (the rotation direction around the Z axis). The drive mechanism 436 can be configured to drive the wafer 6 in the Z direction. The relative rotation operation of the wafer 6 and the chip 51 in the θZ direction can be performed by rotating the wafer 6 using the wafer stage 43 (the drive mechanism 436) and / or rotating the chip 51 using the bonding head 423. The wafer stage 43 also includes a surface mirror 432 for measuring the position of the wafer stage 43 in the X and Y directions. The surface mirror 432 serves as a target of an interferometer 422, which measures the position of the wafer stage 43 in the X and Y directions. The interferometer 422 is mounted on the upper base 42, irradiates the surface mirror 432 provided on the wafer stage 43 with light, and measures the position of the wafer stage 43 based on the reflected light from the surface mirror 432. The controller CNT can control the position of the wafer stage 43 (the wafer 6) in the X and Y directions and the θZ direction based on the position of the wafer stage 43 measured by the interferometer 422. In addition, a crystal grain observation camera 431 (crystal grain image capturing device) is installed on the wafer stage 43. The crystal grain observation camera 431 is a camera for observing the target bonding surface of the crystal grain 51. The crystal grain observation camera 431 can be configured to be able to capture an image of the target bonding surface of the crystal grain 51 in a state where the crystal grain 51 is held by the bonding head 423 (holder), and the target bonding surface of the crystal grain 51 faces downward. In the present embodiment, the crystal grain observation camera 431 is installed on the wafer stage 43 (drive mechanism 436) and can move in the X direction and the Y direction as the wafer stage 43 moves. The crystal grain observation camera 431 is used to obtain (measure) information indicating the position of the pattern provided on the target bonding surface of the crystal grain 51. For example, the controller CNT uses known image processing techniques to detect the position of the feature points on the target bonding surface of the crystal grain 51 from the image obtained by capturing the target bonding surface of the crystal grain 51 by the crystal grain observation camera 431. Therefore, the controller CNT can measure the position of the pattern of the crystal grain 51 held by the bonding head 423 in the X and Y directions and / or the θZ direction. Next, the mechanism installed on the upper base 42 will be described. The bonding head 423, the drive unit 425 (driver), and the wafer observation camera 421 are installed on the upper base 42. The bonding head 423 (second holder) holds the crystal grain 51 transferred from the pickup head 31 by vacuum suction or the like, and drives the crystal grain 51 in the -Z direction to bond the crystal grain 51 to the wafer 6. The bonding head 423 is driven by the drive unit 425. The drive unit 425 drives the bonding head 423 so that the crystal grain 51 moves between the surface treatment position and the bonding process position. At the surface treatment position, the target bonding surface of the crystal grain 51 is subjected to surface treatment by a surface treatment unit 46 (surface treatment device) described later, and at the bonding process position, a bonding process of bonding the crystal grain 51 to the wafer 6 is performed. That is, the drive unit 425 switches the position of the crystal grain 51 between the surface treatment position and the bonding process position. In the present embodiment, the direction of the target bonding surface of the crystal grain 51 changes between the surface treatment position (first position) and the bonding process position (second position). In the example shown in FIG. 1, the target bonding surface of the crystal grain 51 arranged at the surface treatment position faces upward, and the target bonding surface of the crystal grain 51 arranged at the bonding process position faces downward. The direction of the target bonding surface of the crystal grain 51 is reversed between the surface treatment position and the bonding process position. Therefore, the drive unit 425 is configured to drive the bonding head 423 to rotate about an axis L parallel to the Y direction. Thereby, the crystal grain 51 can be moved between the surface treatment position and the bonding process position so that the direction of the target bonding surface of the crystal grain 51 changes between the surface treatment position and the bonding process position (in the example shown in FIG. 1, the directions of the target bonding surfaces of the crystal grain 51 are opposite). Here, in the present embodiment, since the surface treatment is performed while the die 51 is held by the bonding head 423, the holding surface of the die 51 of the bonding head 423 is preferably made of a material that is not easily damaged by the surface treatment. In addition, a fixing mechanism for fixing (locking) the position of the bonding head 423 is preferably provided on the drive unit 425 so that the bonding head 423 does not vibrate or drift in the rotational direction during the bonding process. The bonding of the die 51 to the wafer 6 can be accomplished by relatively driving the die 51 and the wafer 6 by the bonding head 423 and the wafer stage 43. The bonding of the die 51 to the wafer 6 can be performed by driving the die 51 in the -Z direction by using the bonding head 423 or by driving the wafer 6 in the +Z direction by using the wafer stage 43. The wafer observation camera 421 (wafer image capturing device) is a camera for observing the target bonding surface of the wafer 6. The wafer observation camera 421 can be configured to be able to capture an image of the wafer 6 while the wafer 6 is held by the wafer stage 43. The wafer observation camera 421 is used to obtain (measure) information indicating the position of the pattern provided on the target bonding surface of the wafer 6. For example, the controller CNT uses known image processing techniques to detect the position of the feature points on the target bonding surface of the wafer 6 from the image obtained by capturing the target bonding surface of the wafer 6 by the wafer observation camera 421. Therefore, the controller CNT can measure the position of the pattern of the wafer 6 held by the wafer stage 43 in the X and Y directions and / or the θZ direction. Here, the relative position between the wafer observation camera 421 and the die observation camera 431 is preferably calibrated to accurately reduce the bonding deviation between the wafer 6 and the die 51 during the bonding process. Therefore, for calibration, it is preferable to dispose (mount) a mark on the bonding apparatus 100A that can be observed by one or both of the wafer observation camera 421 and the die observation camera 431. The bonding apparatus 100A according to the present embodiment is provided with a surface treatment unit 46. The surface treatment unit 46 performs a surface treatment on the held surface of the die 51 while the die 51 is held by the bonding head 423, such that the die 51 is disposed at the surface treatment position (i.e., such that the target bonding surface of the die 51 faces upward). The surface treatment includes an activation treatment for activating the surface state of the held surface of the die 51. In this case, the surface treatment unit 46 includes, for example, an atmospheric pressure plasma activation device that generates plasma under atmospheric pressure to impart predetermined energy to particles and causes the particles to impact the held surface of the die 51, thereby activating the held surface of the die 51. Additionally, the surface treatment may include a cleaning treatment for cleaning the held surface of the die 51 and / or a lyophilic treatment for making the held surface of the die 51 lyophilic (hydrophilic). In this case, the surface treatment unit 46 may include, for example, a cleaning device and / or a lyophilic device that supplies a predetermined liquid to the held surface of the die 51 to clean the held surface of the die 51, and the lyophilic device supplies a predetermined liquid to the held surface of the die 51, thereby making the held surface of the die 51 lyophilic. Additionally, as the predetermined liquid used in the cleaning device or the lyophilic device, water or a liquid containing an OH group may be used. However, the liquid is not limited to these. The controller CNT is formed, for example, by a computer (information processing device) including a processor such as a central processing unit (CPU) and a storage such as a memory. The controller CNT controls the surface treatment and the bonding process by controlling the respective units of the bonding apparatus 100A. The surface treatment includes the activation treatment as described above, and may additionally include a cleaning treatment and / or a lyophilic treatment. The bonding process is a process of aligning the wafer 6 and the die 51 such that the patterns of the wafer 6 and the die 51 overlap each other and bonding the die 51 onto the wafer 6. More specifically, the controller CNT obtains the position of the pattern provided on the target bonding surface of the wafer 6 based on the image of the target bonding surface of the wafer 6 captured by the wafer observation camera 421. Additionally, the controller CNT obtains the position of the pattern provided on the target bonding surface of the die 51 based on the image of the target bonding surface of the die 51 captured by the die observation camera 431. The controller CNT may control the bonding process based on the position of the pattern of the wafer 6 and the position of the pattern of the die 51. Recently, a technology called Chiplet has been proposed, which realizes high-performance semiconductor components in one package by bonding different dies with high-density I / O. In the Chiplet technology, the pitch of the high-density I / O arranged on each die is about 1 μm, and a bonding position accuracy of about 100 nm is required. Since the bonding position accuracy of an actually used bonding apparatus is about 2 μm, the bonding apparatus 100A needs to accurately perform the alignment between the wafer 6 and the die 51 and further improve the bonding position accuracy. Next, a detailed example of the configuration of the wafer stage 43 will be described. FIG. 2 is a view showing the wafer stage 43 observed from the +Z direction. The wafer 6 is held by the wafer chuck 433. To perform two-dimensional positioning, the wafer stage 43 includes a strip mirror 432x for performing position measurement in the X direction and the θZ direction (rotation direction), and a strip mirror 432y for performing position measurement in the Y direction. The strip mirror 432x is the target of the interferometers 422a and 422c that perform position measurement in the X direction. The interferometers 422a and 422c are arranged separately in the Y direction. The rotation amount (θZ direction) of the wafer stage 43 can be obtained from the difference between the measurement results of the interferometers 422a and 422c. The strip mirror 432y is the target of the interferometer 422b that performs position measurement in the Y direction. The interferometers 422a to 422c instantaneously measure the position of the wafer stage 43 in the X direction, the position in the Y direction, and the rotation amount in the θZ direction. The controller CNT can instantaneously perform feedback control on the driving of the wafer stage 43 and accurately perform two-dimensional positioning of the wafer stage 43. In the bonding apparatus 100A according to the present embodiment, by accurately measuring the position using the interferometers 422a to 422c and performing feedback control on the driving mechanism of the wafer stage 43 based on the result of the position measurement, the positioning mechanism of the wafer stage 43 can be functioned. A reference plate 434 including a plurality of markers 434a to 434c is mounted on the wafer stage 43. The reference plate 434 is made of a material having a low coefficient of thermal expansion and includes markers 434a to 434c formed (drawn) with high position accuracy. For example, the reference plate 434 can be formed by drawing markers on a quartz substrate by a drawing method using a semiconductor lithography process. The reference plate 434 can be configured to have a surface substantially flush with the surface of the wafer 6. In the present embodiment, the reference plate 434 can be observed by the wafer observation camera 421, but the present invention is not limited thereto when a reference plate observation camera is provided individually. The wafer stage 43 can be composed of a coarse movement stage and a fine movement stage. The coarse movement stage can be driven in a large range, and the fine movement stage can be accurately driven in a small range on the coarse movement stage. In this case, since the die observation camera 431, the mirror 432, the wafer chuck 433, and the reference plate 434 need to be accurately positioned, they are preferably fixed to the fine movement stage. A method for ensuring the origin position, magnification, X-axis and Y-axis directions (rotation), and orthogonality of the wafer stage 43 using the reference plate 434 will be described. While controlling the wafer observation camera 421 to capture (observe) an image of the mark 434a, when the mark 434a is disposed at the center of the image obtained by the wafer observation camera 421, the controller CNT obtains the measurement values of the interferometers 422a to 422c. The obtained measurement values are set as the origin of the wafer stage 43. Then, while controlling the wafer observation camera 421 to capture (observe) an image of the mark 434b, when the mark 434b is disposed at the center of the image obtained by the wafer observation camera 421, the controller CNT obtains the measurement values of the interferometers 422a to 422c. The controller CNT determines the Y-axis direction and Y magnification of the wafer stage 43 based on the obtained measurement values. Next, while controlling the wafer observation camera 421 to capture (observe) an image of the mark 434c, when the mark 434c is disposed at the center of the image obtained by the wafer observation camera 421, the controller CNT obtains the measurement values of the interferometers 422a to 422c. The controller CNT determines the X-axis direction and X magnification of the wafer stage 43 based on the obtained measurement values. That is, the direction from the mark 434b to the mark 434a on the reference plate 434 is defined as the Y-axis of the bonding device 100A, the direction from the mark 434c to the mark 434a is defined as the X-axis of the bonding device 100A, and the directions and orthogonality of each axis are calibrated. In addition, the interval between the mark 434b and the mark 434a is defined as the scale in the Y direction of the bonding device 100A, the interval between the mark 434c and the mark 434a is defined as the scale in the X direction of the bonding device 100A, and calibration is performed. Due to changes in atmospheric pressure and temperature, the refractive index of the optical path of the interferometer changes, which causes the measurement values to change. Therefore, it is preferable for the interferometers 422a to 422c to perform calibration at any timing and ensure the origin position, magnification, rotation, and orthogonality of the wafer stage 43. Note that in order to reduce the change in the measurement values of the interferometers 422a to 422c, the space where the wafer stage 43 moves can be covered with a temperature control room to control the temperature. In the present embodiment, an example has been described in which the reference plate 434 is disposed on the wafer stage 43 and an image of the reference plate 434 is captured (observed) by the wafer observation camera 421. However, the present invention is not limited thereto. For example, the reference plate 434 may be disposed on the upper base 42 to capture (observe) an image of the reference plate 434 by the die observation camera 431. Even in this configuration, the origin position, magnification, rotation, and orthogonality of the wafer stage 43 can be ensured. In the present embodiment, an example has been described in which calibration is performed by capturing (observing) an image of the reference plate 434. However, the present invention is not limited thereto. For example, calibration may be performed by a docking operation with a reference surface. Alternatively, accurate positioning of the wafer stage 43 may be performed using a position measuring mechanism such as a white interferometer that ensures absolute values. In order to improve the bonding strength between the wafer 6 and the die 51, it is preferable to minimize the time from the surface treatment of the target bonding surface of the die 51 to the start of the bonding process as much as possible. In addition, it is preferable to avoid contact of other members with the target bonding surface of the die 51 between the surface treatment and the bonding process. Therefore, as described above, the bonding apparatus 100A according to the present embodiment is provided with a surface treatment unit 46 that performs surface treatment on the target bonding surface of the die 51 while the die 51 is held by the bonding head 423. After the surface treatment is performed by the surface treatment unit 46, the bonding process of aligning the wafer 6 and the die 51 and bonding the die 51 to the wafer 6 is performed without releasing the holding of the die 51 by the bonding head 423. Thereby, between the surface treatment and the bonding process, contact of other members with the target bonding surface of the die 51 can be avoided, the time from the surface treatment to the bonding process can be shortened, and the bonding strength between the wafer 6 and the die 51 can be improved. [Operation of the Bonding Apparatus] Hereinafter, the operation (bonding method) of the bonding apparatus 100A according to the present embodiment will be described. FIG. 3 is a flowchart showing the operation procedure of the bonding apparatus 100A according to the present embodiment. The controller CNT can execute the processes in the flowchart of FIG. 3. FIGS. 4A to 4C are views for explaining the operation of the bonding apparatus 100A, and only the bonding unit 4 is shown. In step S101, the controller CNT loads the wafer 6 as the first object onto the wafer stage 43 (wafer chuck 433) of the bonding apparatus 100A using a wafer transfer mechanism (not shown). At this time, since foreign matter adheres to the target bonding surface of the wafer 6, which may cause poor bonding, it is desirable to maintain the space inside the bonding apparatus 100A at a high cleanliness level of about class 1. In order to maintain a high level of cleanliness even for the wafer 6, it is desirable to store the wafer 6 in a container having high airtightness and maintaining high cleanliness, and load it onto the wafer stage 43 of the bonding apparatus 100A from the container. This container is, for example, a front-opening unified pod (FOUP). In order to improve the cleanliness of the wafer 6, a cleaning mechanism for cleaning the wafer 6 can be provided in the bonding apparatus 100A. A mechanism for performing pre-treatment of the bonding process on the wafer 6 can also be provided in the bonding apparatus 100A. For example, the pre-treatment is a process of applying an adhesive to the target bonding surface of the wafer 6 when bonding using an adhesive, or a process of activating the target bonding surface of the wafer 6 in hybrid bonding. After measuring the position of the wafer 6 in the θZ direction and the X and Y directions by a pre-aligning unit (not shown), the wafer 6 is roughly positioned based on the measurement results and conveyed onto the wafer chuck 433 of the wafer stage 43. The position of the wafer 6 in the rotational direction can be measured by detecting the notch or the orientation flat of the wafer 6, and the position of the wafer 6 in the X and Y directions can be measured by detecting the outer shape of the wafer 6. In step S102, the controller CNT performs wafer alignment using the wafer observation camera 421. In the wafer alignment, the wafer observation camera 421 captures an image of the target bonding surface of the target region (bonding target) of the die 51 to be bonded in a plurality of regions of the wafer 6. Based on the obtained image, the position of the pattern provided on the target region is obtained. Note that each of the plurality of regions of the wafer 6 is a bonding region for bonding one die 51, and is sometimes simply referred to as a "region" hereinafter. Focus adjustment when capturing an image of the target bonding surface of the wafer 6 can be performed by a focus adjustment mechanism provided in the wafer observation camera 421, or by driving the wafer 6 in the Z direction by the Z drive mechanism of the wafer stage 43. When alignment marks are provided on the target bonding surface of the wafer 6, the alignment marks can be used to obtain the position of the pattern of the wafer 6. On the contrary, when no alignment marks are set on the target bonding surface of the wafer 6, feature points capable of specifying the position of the pattern of the wafer 6 can be used to obtain the position of the pattern of the wafer 6. As the feature points, for example, a part of the pattern of the wafer 6 can be used. For example, the controller CNT can measure the position of the pattern of the wafer 6 by measuring the image position of the projected alignment mark or feature point relative to the center of the image obtained by the wafer observation camera 421. Sometimes the alignment mark or feature point is referred to as an alignment mark or the like. For example, there is a method for accurately measuring the position of the alignment mark or the like relative to the reference point of the bonding device 100A. According to this method, the wafer stage 43 is driven in advance so that the mark formed on the reference plate 434 falls within the field of view of the image capture of the wafer observation camera 421, and the wafer observation camera 421 captures the image of the mark on the reference plate 434. Based on the position of the wafer stage 43 at this time and the position of the mark in the image obtained by the wafer observation camera 421, the reference point of the bonding device 100A is determined. Based on the image obtained by capturing the alignment mark or the like by the wafer observation camera 421, the offset amount of the position of the alignment mark or the like relative to the reference point is obtained. Therefore, the position of the alignment mark can be accurately measured from the position of the reference point and the offset amount. In the present embodiment, as the position of the reference point of the bonding device 100A, the position of a specific mark on the reference plate 434 is used. However, if it is a position used as a reference, the position of another location can be used. Since the interferometer 422 has a narrow measurement range in the rotational direction, the amount of rotation that the wafer stage 43 can correct is relatively small. If the amount of rotation of the wafer 6 is large, it is preferably to reposition the wafer 6 on the wafer stage 43 to correct the amount of rotation of the wafer 6. When the wafer 6 is repositioned on the wafer stage 43, it is necessary to measure the position of the wafer 6 again. During the execution of step S102, it is preferably to use a height measurement mechanism (not shown) for measuring the surface position (height) of the target bonding surface of the wafer 6 to measure the surface position of the wafer 6. This is because of the thickness variation of the wafer 6, and the surface position of the wafer 6 is important for accurately managing (controlling) the gap between the wafer 6 and the die 51 in the bonding process. The reference plate 434 is used to ensure the origin position, magnification, X-axis and Y-axis directions (rotation), and orthogonality of the wafer stage 43. Accordingly, it is possible to measure the position of the wafer 6 mounted on the wafer stage 43 relative to the origin position and the like of the wafer stage 43. On the wafer 6, regions (bonding targets or target regions) where semiconductor devices (patterns) are formed are repeatedly arranged at a predetermined period. That is, the wafer 6 includes a plurality of regions to which the chips 51 are respectively bonded. The semiconductor devices in each region of the wafer 6 are accurately positioned and manufactured using semiconductor manufacturing equipment. The plurality of regions on the wafer 6 are usually accurately arranged at a repeating period with nanometer-level accuracy. For this reason, in the wafer alignment in step S102, it is not necessary to measure the positions of all regions on the wafer 6, but it is only necessary to measure the positions of some of the plurality of regions on the wafer 6. More specifically, the positions of the semiconductor devices (patterns or marks) in three or more of the plurality of regions on the wafer 6 are measured, and statistical processing is performed. Accordingly, it is possible to calculate the array of regions on the wafer 6, the origin position of the array, the positions in the X and Y directions, the rotation amount in the θZ direction, the orthogonality, and the magnification error of the repeating period. The wafer chuck 433 may include a mechanism for controlling the temperature of the wafer 6. This is because, in the case where the thermal expansion coefficient of the silicon wafer is 3 ppm / °C and the diameter of the wafer is 300 mm, if the temperature rises by 1°C, the outermost peripheral position moves by 150 mm × 0.000003 = 0.00045 mm = 450 nm. If the bonding position (for example, the position of the target region) moves after the wafer alignment, it may be difficult to accurately bond the wafer 6 and the chip 51. Therefore, it is preferable to control the temperature of the wafer 6 so that the temperature change of the wafer 6 is kept below 0.1°C. Note that, in the present embodiment, the wafer 6 is used as the first object. If an interposer having wirings formed thereon is used as the first object, the array of the wirings formed repeatedly is measured instead of the array of the semiconductor devices. If a wafer or a panel without patterns is used as the first object, it is not necessary to perform the wafer alignment in step S102. The above steps S101 and S102 are processes related to the wafer 6 used as the first object. In parallel with steps S101 and S102, processes related to the chip 51 used as the second object are performed (steps S201 to S205). In step S201, the controller CNT uses a conveyor mechanism (not shown) to load the cutting frame 5 onto the pickup unit 3 (onto the frame holder 33). The cutting frame 5 is a frame having an opening at the center, and a cutting tape is adhered to the cutting frame 5 to cover the opening. A plurality of die 51 divided by a cutter such as a dicing machine are arranged on the cutting tape. Conventionally, the cutting frame 5 is conveyed by an unsealed cassette. However, since foreign matter adheres to the target bonding surface of the die 51, resulting in poor bonding, it is necessary to convey the cutting frame 5 in a container with high airtightness and maintained high cleanliness. In order to improve the cleanliness of the die 51, a cleaning mechanism for cleaning the die 51 on the cutting frame 5 (cutting tape) may also be provided inside the bonding apparatus 100A. After the rotation direction and displacement positions (positions in the X and Y directions) of the cutting frame 5 are roughly determined based on the outer shape of the cutting frame 5 by a pre-alignment unit (not shown), the cutting frame 5 can be conveyed onto the frame holder 33. In step S202, the controller CNT controls the pickup head 31 and the release head 32 to pick up one die 51 from the cutting frame 5 (cutting tape). More specifically, the controller CNT moves the pickup head 31 and the release head 32 to the position of the die 51 to be picked up (hereinafter also referred to as the target die 51). The controller CNT drives the release head 32 in the +Z direction to push the target die 51 upward from the back side of the cutting tape. In this state, the controller CNT drives the pickup head 31 in the -Z direction so that the pickup head 31 and the target die 51 come into contact with each other. Then, the target die 51 is held (adsorbed) by the pickup head 31 by vacuum suction or the like, and the target die 51 can be peeled off from the cutting tape by driving the pickup head 31 in the +Z direction. The target die 51 to be picked up can be determined according to the information of defect-free dies (known good dies: KGD) uploaded online to the bonding apparatus 100A. Usually, only defect-free dies are picked up as the target die 51. However, for the regions on the wafer 6 having defective devices in a plurality of regions, defective dies (known bad die: KBD) can be picked up as the target die 51. In step S203, the controller CNT transfers (delivers) the target die 51 picked up by the pick-up head 31 to the bonding head 423 of the bonding unit 4. More specifically, the controller CNT drives the pick-up head 31 in the X direction to pick up the target die 51 and positions the pick-up head 31 above the bonding head 423. At this time, the bonding head 423 is driven (positioned) by the driving unit 425 so that the holding surface for holding the target die 51 faces upward. Then, the controller CNT transfers the target die 51 from the pick-up head 31 to the bonding head 423 by driving the pick-up head 31 in the -Z direction. When the target die 51 is picked up by the pick-up head 31, the target bonding surface of the target die 51 faces upward (is oriented in the +Z direction), and the target bonding surface of the target die 51 is held (contacted) by the pick-up head 31. On the other hand, if the target die 51 is transferred from the pick-up head 31 to the bonding head 423, the surface on the side opposite to the target bonding surface of the target die 51 is held by the bonding head 423. In the present embodiment, an example in which the pick-up head 31 directly transports the target die 51 to the bonding head 423 has been described, but the present invention is not limited thereto. For example, when one or more transport mechanisms are provided on the transport path from the target die 51 to the bonding head 423, the target die 51 can be transported to the bonding head 423 via a process of transferring the target die 51 to one or more transport mechanisms. Additionally, if one or more die holders are provided in the transport path from the target die 51 to the bonding head 423, the pick-up head 31 can transport the target die 51 to the bonding head 423 after re-holding the target die 51 using one or more die holders. In step S204, the controller CNT causes the surface treatment unit 46 to perform surface treatment for enhancing the bonding strength between the wafer 6 and the target die 51 on the target bonding surface of the target die 51 held by the bonding head 423 (see FIG. 4A). At this time, the bonding head 423 is driven (positioned) by the driving unit 425 so that the target die 51 is positioned at the surface treatment position to perform surface treatment by the surface treatment unit 46. In the present embodiment, it is possible to perform surface treatment on the holding surface of the target die 51 in a state where the target bonding surface of the target die 51 faces upward. As described above, the surface treatment includes activation treatment for activating the surface state of the holding surface of the target die 51. Additionally, the surface treatment may include cleaning treatment for cleaning the holding surface of the target die 51 and / or lyophilicity treatment for making the holding surface of the target die 51 lyophilic (hydrophilic). Here, in step S204, when bonding using an adhesive, a process of applying the adhesive to the target bonding surface of the target die 51 can be performed. When applying bump bonding, a heating process for melting the bumps of the target die 51 or a flux application process can be performed. In step S205, the controller CNT rotationally drives the bonding head 423 by the driving unit 425 so that the target die 51 held by the bonding head 423 is disposed at the bonding process position (see FIG. 4B). Thereby, the target bonding surface of the target die 51 held by the bonding head 423 can be oriented downward, and the target bonding surface of the target die 51 and the target bonding surface of the wafer 6 can face each other. At this time, the controller CNT preferably fixes (locks) the position of the bonding head 423 by the above-described fixing mechanism. Through the above process, the target die 51 held by the bonding head 423 can face the wafer 6 held by the wafer stage 43, so that a state in which a bonding process for bonding the target die 51 to the target area of the wafer 6 can be performed is obtained. In step S103, the controller CNT performs die alignment using the die observation camera 431 (see FIG. 4B). In die alignment, the wafer stage 43 on which the die observation camera 431 is mounted is driven so that the target die 51 held by the bonding head 423 is disposed above the die observation camera 431. Next, an image of the target bonding surface of the target die 51 is captured by the die observation camera 431, and the position of the pattern provided on the target bonding surface of the target die 51 is obtained based on the acquired image. Focus adjustment when capturing an image of the target bonding surface of the target die 51 can be performed by a focus adjustment mechanism provided in the die observation camera 431, or by driving the die observation camera 431 in the Z direction by the Z driving mechanism of the wafer stage 43. When the Z driving mechanism is provided on the bonding head 423, focus adjustment can be performed by driving the target die 51 in the Z direction by the Z driving mechanism of the bonding head 423. If alignment marks are provided on the target bonding surface of the target die 51, the alignment marks can be used to obtain the position of the pattern of the target die 51. On the other hand, for general dies, alignment marks are often disposed on scribe lines and removed together with the scribe lines. In this case, feature points that can specify the position of the pattern of the target die 51 can be used to obtain the position of the pattern of the target die 51. As the feature points, for example, the ends of pads or bump arrays disposed on the target bonding surface of the target die 51, regions having a non-periodic array, or the outer edge (outline) of the die, or the like can be used. For example, the controller CNT can measure the position of the pattern of the target die 51 by measuring the image position of the projected alignment marks or feature points relative to the center of the image obtained by the die observation camera 431. The measurement of the position of the target die 51 can include the measurement of the rotation amount of the target die 51 (rotation in the θZ direction). The rotation amount of the target die 51 can be obtained, for example, based on the positions of a plurality of feature points on the target bonding surface of the target die 51 from the image obtained by the die observation camera 431. The positions of the plurality of feature points can be obtained based on a plurality of images obtained by individually capturing the feature points while the wafer stage 43 drives the die observation camera 431. Alternatively, when the entire target die 51 falls within the field of view of the image capture of the die observation camera 431, the positions of the plurality of feature points can be obtained from the image obtained by capturing the entire target bonding surface of the target die 51 using the die observation camera 431. In the bonding process, the rotation amount of the target die 51 can be corrected by rotating the wafer 6 using the wafer stage 43. However, the measurement range of the interferometer 422 in the rotation direction is narrow. Therefore, if the rotation amount of the target die 51 is large, it is desirable to reposition the target die 51 on the bonding head 423 to correct the rotation amount of the target die 51. When the target die 51 is repositioned on the bonding head 423, the position of the target die 51 needs to be measured again. During the execution of step S103, it is preferably to use a height measurement mechanism (not shown) for measuring the surface position (height) of the target bonding surface of the target die 51 to measure the surface position of the target die 51. Due to the thickness variation of the target die 51, the surface position of the target die 51 is important for accurately managing (controlling) the gap between the wafer 6 and the target die 51 in the bonding process. In addition, the heights of a plurality of points on the target bonding surface of the target die 51 (i.e., the height distribution of the target bonding surface of the target die 51) can be measured to adjust the relative posture between the wafer 6 and the target die 51 based on the measurement results in the bonding process. The relative posture can be adjusted by a tilting mechanism installed on the wafer stage 43 and / or the bonding head 423. In step S104, the controller CNT drives the wafer stage 43 to align the wafer 6 and the target die 51 such that the patterns of the wafer 6 and the target die 51 overlap each other (see FIG. 4C). More specifically, the controller CNT drives the wafer stage 43 such that the target area of the target die 51 to be bonded on the wafer 6 is disposed under the target die 51 held by the bonding head 423. Then, the controller CNT aligns the wafer 6 and the target die 51 based on the position of the pattern of the wafer 6 obtained in step S102 and the position of the pattern of the target die 51 obtained in step S103. At this time, it is preferable to align the wafer 6 and the target die 51 to reduce the relative rotational deviation and / or the posture deviation between the wafer 6 and the target die 51. If a change (displacement) in the relative position between the wafer 6 and the target die 51 is predicted when bonding the wafer 6 and the target die 51, the change in the relative position can be used as an offset to align the wafer 6 and the target die 51. The offset can be obtained in advance by experiments, simulations, etc. The offset determination method (management method) will be described later. In step S105, the controller CNT bonds the target die 51 to the wafer 6 by reducing the interval between the wafer 6 and the target die 51 (bonding process). The bonding process can be performed by driving the target die 51 in the Z direction using the bonding head 423 or driving the wafer 6 in the Z direction using the wafer stage 43. Alternatively, the bonding process can be performed by relatively driving the target die 51 and the wafer 6 in the Z direction using the bonding head 423 and the wafer stage 43. To accurately control the interval between the wafer 6 and the target die 51, it is preferable to provide a detector (e.g., an encoder) that detects the position of the bonding head 423 and / or the wafer stage 43 in the Z direction and performs feedback control based on the detection result of the detector. In order to improve the alignment accuracy between the wafer 6 and the target die 51 even during the execution of the bonding process, the relative positions between the wafer 6 and the target die 51 in the X and Y directions can be controlled. In this case, preferably, the width of the mirror 432 in the Z direction is set such that even when the wafer stage 43 is driven in the Z direction, the mirror 432 can be irradiated with light from the interferometer 422. A detector (e.g., an encoder, a gap sensor) can also be provided, which detects the relative positions in the X and Y directions between the bonding head 423 and the wafer stage 43. In this case, during the execution of the bonding process, while the detector detects (monitors) the relative positions between the bonding head 423 and the wafer stage 43 in the X and Y directions, feedback control of the relative positions can be performed. Note that if the wafer 6 and the target die 51 come into contact with each other, the position of the wafer stage 43 feedback-controlled based on the measurement result of the interferometer 422 is restricted. Therefore, preferably, the control method of the relative positions between the wafer 6 and the target die 51 in the X and Y directions is switched before and after contact by, for example, stopping the feedback process at the start of the contact between the wafer 6 and the target die 51. In addition, in the bump bonding, the processes required for the bump bonding can be performed in step S105, for example, pressing the target die 51 against the wafer 6 with a predetermined pressure (pressing pressure). In the hybrid bonding, the process of applying an impact serving as a trigger for the start of bonding can be performed in step S105. The process of observing the bonding state (bonding deviation amount) between the wafer 6 and the target die 51 after bonding can also be performed in step S105. Here, from the start of holding by the bonding head 423 in step S203 until the end of the bonding between the wafer 6 and the target die 51 in step S105, the target die 51 is held by the bonding head 423. That is, the holding of the target die 51 by the bonding head 423 is not released. After the bonding between the wafer 6 and the target die 51 in step S105 is completed, the controller CNT releases the holding of the target die 51 by the bonding head 423 and increases the interval between the wafer stage 43 and the bonding head 423. Note that it can be understood that the bonding process includes the alignment between the wafer 6 and the target die 51 in step S104 described above. In step S106, the controller CNT determines whether the die 51 has been bonded to all the target areas on the wafer 6. Usually, dozens to hundreds of semiconductor devices are formed on one wafer 6 as a plurality of target areas, and the die 51 can be bonded to the plurality of target areas. If there is an area on the wafer 6 where the next die 51 to be bonded exists (the next target area), the process returns to step S202. If there is no next target area on the wafer 6, that is, the die 51 has been bonded to all the target areas on the wafer 6, the process proceeds to step S107. In the present embodiment, an example has been explained in which it is determined whether there is a next target area after the bonding process and the process returns to step S202. However, the determination of whether there is a next target area can be performed before the end of the bonding process. In this case, step S202 can be executed in parallel with the execution of the bonding process. That is, in parallel with the execution of the bonding process, the die 51 to be bonded to the next target area is picked up from the dicing frame 5 (dicing tape). At this time, if a plurality of bonding heads 423 and / or pick-up heads 31 are set, the parallel process can be executed faster. In the case of bonding a plurality of types of dies 51 to each target area (semiconductor device) on the wafer 6, one type of die is bonded to all the target areas of the wafer 6, and then the bonding of the next type of die is started. When starting the bonding of the next type of die, the loading operation (step S201) of the dicing frame 5 on which the next type of die is arranged is performed, and then the die pick-up in step S202 can be executed. In step S107, the controller CNT unloads the wafer 6 with the dies 51 bonded to a plurality of target areas from the wafer stage 43 (wafer chuck 433) using a wafer transfer mechanism (not shown). The case where the wafer 6 is returned to the container (e.g., FOUP) for loading the wafer 6 and the case where the wafer 6 is returned to a container different from the container can be considered. It is preferable to return the wafer 6 to another container because the thickness of the entire wafer 6 bonded with the dies 51 changes, and the gap between the wafers 6 needs to be wider than the gap between the wafers 6 before the bonding process. Above, the operation procedure of the bonding apparatus 100A that bonds the dies 51 to a plurality of areas on one wafer 6 respectively has been described. When the dies 51 are bonded to each of the plurality of wafers 6, the flowchart of FIG. 3 is repeated. Since the number of dies 51 on the dicing frame 5 and the number of a plurality of areas on the wafer 6 are usually different, the loading of the wafer 6 and the loading of the dicing frame 5 are usually not synchronized. If the dies 51 on the dicing frame 5 are used up during the bonding of the dies 51 to one wafer 6, the next dicing frame 5 can be loaded into the bonding apparatus 100A. If the dies 51 still remain on the dicing frame 5 even after the bonding of the dies 51 to one wafer 6 is completed, the remaining dies 51 can be used for the next wafer 6. [Offset determination method] The method (management method) for determining the offset that can be used in step S104 described above will be described below. As described above, when aligning the target die 51 and the target area of the wafer 6 based on the position of the target die 51 measured by the die observation camera 431 and the position of the target area of the wafer 6 measured by the wafer observation camera 421, the offset can be reflected. FIG. 5 is a flowchart showing the offset determination method. The controller CNT can execute the process in the flowchart of FIG. 5. Here, in order to determine the offset, a die for testing (hereinafter sometimes referred to as a test die) can be used. The test die can be made of a material that can transmit the measurement light detected by the wafer observation camera 421. In the present embodiment, the test die can be made of glass. If the wafer observation camera 421 can detect infrared light, the test die can be made of a material that transmits infrared light such as silicon. The test die is manufactured in this way because after the wafer 6 (target area) is bonded to the test die, the bonding deviation amount between the wafer 6 and the test die is measured by the wafer observation camera 421. The bonding deviation amount can include, for example, the position deviation amount (i.e., the overlap error) between the wafer 6 and the test die in the X and Y directions and / or the θZ direction. In addition, the test die is provided with alignment marks used to measure the die position and marks used to measure the bonding deviation amount. The test die can be manufactured to have the shape and pattern that simulate the die 51 used in the actual process. In step S301, the controller CNT uses a wafer transfer mechanism (not shown) to load the wafer 6 as the first object onto the wafer stage 43 (wafer chuck 433) of the bonding device 100A. On the wafer 6, marks used for wafer alignment and marks used to measure the bonding deviation amount are formed. The wafer 6 preferably undergoes a process such as the application of a temporary adhesive to reduce the position deviation of the test die relative to the wafer 6 (target area) that occurs when bonding the test die. After measuring the position of the wafer 6 in the rotation direction and the X and Y directions by a pre-alignment unit (not shown), the wafer 6 is roughly positioned based on the measurement results and is transferred onto the wafer chuck 433 of the wafer stage 43. The position of the wafer 6 in the rotation direction can be measured by detecting the notch or the orientation plane of the wafer 6, and the position of the wafer 6 in the X and Y directions can be measured by detecting the outer shape of the wafer 6. Note that, as the wafer 6 for determining the offset, a wafer for testing can be used. In step S302, the controller CNT performs wafer alignment using the wafer observation camera 421. For example, the controller CNT uses the wafer observation camera 421 to detect the alignment marks on the wafer 6 and measures the mounting position and the rotation amount of the wafer 6 on the wafer stage 43. Step S302 is the same process as step S102 described above, and its detailed description is omitted here. During the execution of step S302, a height measurement mechanism (not shown) for measuring the surface position (height) of the target bonding surface of the wafer 6 is preferably used to measure the surface position of the wafer 6. This is because of the thickness variation of the wafer 6, and the surface position of the wafer 6 is important for accurately managing (controlling) the gap between the wafer 6 and the test die in the bonding process. In step S303, the controller CNT mounts the test die, which is the second object, on the bonding head 423. For example, the test die is disposed on a dicing tape adhered to the dicing frame 5. The dicing frame 5 is held by the frame holder 33. The controller CNT controls the pick-up head 31 and the release head 32 to pick up the test die from the dicing frame 5 (dicing tape) by the pick-up head 31. Then the controller CNT drives the pick-up head 31 above the bonding head 423 and transfers (mounts) the test die from the pick-up head 31 to the bonding head 423. In step S304, the controller CNT performs die alignment using the die observation camera 431. For example, the controller CNT uses the die observation camera 431 to detect the alignment marks on the test die and measures the position and the amount of rotation of the test die held by the bonding head 423. Step S304 is the same process as step S103 described above, and its detailed description is omitted here. During the execution of step S304, it is preferable to use a height measurement mechanism (not shown) that measures the surface position (height) of the target bonding surface of the test die to measure the surface position of the test die. This is because the thickness of the test die varies, and the surface position of the test die is important for accurately managing (controlling) the gap between the wafer 6 and the test die during the bonding process. In addition, the heights of a plurality of points on the target bonding surface of the test die can be measured to adjust the relative posture between the wafer 6 and the test die based on the measurement results during the bonding process. The relative posture can be adjusted by a tilting mechanism mounted on the wafer stage 43 and / or the bonding head 423. In step S305, the controller CNT drives the wafer stage 43 to perform alignment between the wafer 6 and the test die so that the test die is disposed above the target area of the wafer 6. More specifically, the controller CNT performs alignment between the wafer 6 and the test die based on the position and the amount of rotation of the wafer 6 measured in step S302 and the position and the amount of rotation of the test die measured in step S304. Alignment can be performed so that the pattern (pad) of the target area of the wafer 6 and the pattern (pad) of the test die overlap each other. Step S305 is the same process as step S104 described above, and its detailed description is omitted here. In step S306, the controller CNT bonds the test die to the wafer 6 (bonding process). Step S306 is the same as step S105 described above, and its detailed description of the process is omitted here. In step S307, the controller CNT measures the bonding deviation amount between the target area of the wafer 6 and the test die using the wafer observation camera 421. For example, the controller CNT drives the wafer stage 43 so that the bonding point of the test die on the wafer 6 is disposed under the wafer observation camera 421. Then, the controller CNT causes the wafer observation camera 421 to capture an image of the bonding point and measures the bonding deviation amount (position deviation amount or overlap error) between the wafer 6 (target area) and the test die in the X and Y directions and / or the θZ direction based on the obtained image. An example of a mark for measuring the bonding deviation amount is a mark (Box-in-Box mark) formed by a rectangular frame with a width of 30 μm on the wafer side and a rectangular frame with a width of 60 μm on the test die side. If this mark is used, the wafer 6 and the test die are bonded so that the two frames overlap each other, and the bonding deviation amount between the wafer 6 and the test die is measured based on the position deviation amount between the two frames. The mark for measuring the bonding deviation amount does not always have to have a rectangular shape and may have other shapes in addition to the rectangular shape, such as a polygonal shape, a circular shape, or an elliptical shape. The mark is not limited to the example where the mark on the wafer side is the inner mark and the mark on the die side is the outer mark, and the mark on the wafer side may be the outer mark and the mark on the test die side may be the inner mark. In addition, the mark for measuring the bonding deviation amount is not limited to the Box-in-Box mark, and the mark on the wafer side and the mark on the test die side may be separately disposed. In this case, the bonding deviation amount can be measured based on the interval (e.g., deviation from the target interval) between the mark on the wafer side and the mark on the test die side. Preferably, the bonding deviation amount is measured at a plurality of points of the test die. When measuring the bonding deviation amount at a plurality of points, not only the bonding deviation amount in the X and Y directions can be measured, but also the bonding deviation amount in the θZ direction (i.e., rotational error) can be measured. In addition, when performing statistical processing on the bonding deviation amounts at a plurality of points, the measurement error can be reduced and the bonding deviation amount can be accurately measured. In step S308, the controller CNT calculates the offset based on the bonding deviation amount measured in step S307. For example, the controller CNT calculates the position deviation amounts in the X and Y directions and the rotation amount in the θZ direction for reducing the bonding deviation amount measured in step S307 as the offset. In the above description, an offset is calculated for one area of a test die for bonding the wafer 6. However, it is preferably to use a plurality of test dies to calculate the offset for each of a plurality of areas on the wafer 6. The plurality of areas on the wafer 6 are preferably set to positions corresponding to the plurality of areas where a plurality of dies 51 are bonded in the actual process. In addition, a representative value of the offsets calculated for the plurality of areas on the wafer 6 can be shared among the plurality of areas. Examples of the representative value are an average value, a maximum value, and a mode. If the offset changes according to the position of the wafer 6, the offset can be calculated individually for each of the plurality of areas on the wafer 6. An example of performing alignment between the wafer 6 and the target die 51 in step S104 of FIG. 3 using the offset calculated in the above manner will be described here. Note that the symbols change according to the definition of the direction of the coordinates, but follow the coordinate system shown in each of the following figures. Let (Wx, Wy) be the position of the target area of the wafer 6 relative to the reference point measured in step S102, and Wθ be the rotation amount. Let (Dx, Dy) be the position of the target die 51 relative to the center of gravity (center) of the image obtained by the die observation camera 431 in step S103, and Dθ be the rotation amount. Let (Px, Py) be the amount of displacement (displacement amount) between the wafer 6 and the target die 51 when bonding the wafer 6 and the target die 51, and Pθ be the rotation amount. In addition, as the offset obtained in step S308, let (X0, Y0) be the position deviation amounts in the X and Y directions, and θ0 be the rotation amount in the θZ direction. If the offset is correctly obtained in step S308, then Wx = Wy = Wθ = Dx = Dy = Dθ = 0. Therefore, when bonding the target die 51 to the wafer 6, alignment between the wafer 6 and the target die 51 is performed in step S104 such that the target die 51 is deviated from the target area of the wafer 6 by the offset. That is, the wafer stage 43 is configured such that the position deviation amounts in the X and Y directions are (X0, Y0), the rotation amount in the θZ direction is θ0, and the object die 51 is bonded to the wafer 6. This enables the bonding process to be accurately performed with high position accuracy. If there is a deviation in the position of the wafer 6 during the bonding process, for example, if the position of the wafer 6 deviates in the positive direction, the wafer stage 43 moves in the negative direction to correct the deviation of the wafer 6. More specifically, during the bonding process, the wafer stage 43 is configured such that the amount of position deviation in the X and Y directions is (X0 - Wx, Y0 - Wy), and the amount of rotation in the θZ direction is (θ0 - Wθ). If there is a deviation in the position of the target die 51 during the bonding process, for example, if the position of the target die 51 deviates in the positive direction, the wafer stage 43 moves in the positive direction to correct the deviation of the target die 51. More specifically, during the bonding process, the wafer stage 43 is configured such that the amount of position deviation in the X and Y directions is (X0 - Wx + Dx, Y0 - Wy + Dy), and the amount of rotation in the θZ direction is (θ0 - Wθ + Dθ). If a displacement amount is generated during the bonding process, the position of the amount of displacement is set as the bonding position. For example, if a displacement amount is generated in the positive direction, the wafer stage 43 moves by the same amount, and then the bonding process is performed. More specifically, during the bonding process, the wafer stage 43 is configured such that the amount of position deviation in the X and Y directions is (X0 - Wx + Dx + Px, Y0 - Wy + Dy + Py), and the amount of rotation in the θZ direction is (θ0 - Wθ + Dθ + Pθ). As described above, the bonding apparatus 100A according to the present embodiment includes a surface treatment unit 46 that performs surface treatment on the target bonding surface of the die 51 while the die 51 is held by the bonding head 423. In the bonding apparatus 100A, after the surface treatment is performed by the surface treatment unit 46, the bonding process of aligning the wafer 6 and the die 51 and bonding the die 51 to the wafer 6 is performed without releasing the holding of the die 51 by the bonding head 423. Thus, between the surface treatment and the bonding process, contact between other components and the target bonding surface of the die 51 can be avoided, the time from the surface treatment to the bonding process can be shortened, and the bonding strength between the wafer 6 and the die 51 can be improved. <Second Embodiment> A second embodiment according to the present invention will be described. FIG. 6 is a schematic view showing a bonding apparatus 100B according to the second embodiment. As shown in FIG. 6, the bonding apparatus 100B of the present embodiment uses an encoder to measure the position of the wafer stage. Note that the second embodiment basically inherits the first embodiment and may follow the first embodiment except for the matters mentioned below. The bonding apparatus 100B of the second embodiment is different from the bonding apparatus 100A of the first embodiment shown in FIG. 1 in that an encoder scale 424 and an encoder head 435 are provided instead of the interferometer 422 and the bar-shaped mirror 432. In the bonding apparatus 100B according to the second embodiment, the encoder head 435 is provided on the wafer stage 43, and the encoder scale 424 is mounted on the upper base 42. In the encoder scale 424, a two-dimensional scale is formed on a plane so that two-dimensional positioning can be performed. By detecting the scale with the encoder head 435, the position of the wafer stage 43 can be measured two-dimensionally. Preferably, the encoder scale 424 has a low coefficient of thermal expansion and is formed (drawn) with high position accuracy. As an example of the encoder scale 424, the scale is drawn on a quartz substrate using a drawing method of semiconductor lithography process. Here, the wafer stage 43 may be composed of a coarse movement stage and a fine movement stage. The coarse movement stage can be driven in a large range, and the fine movement stage can be accurately driven in a small range on the coarse movement stage. In this case, in order to perform accurate positioning, the encoder head 435 is preferably fixed to the fine movement stage. The positioning mechanism according to the present embodiment includes accurate position measurement by an encoder and feedback control based on the result. In addition, the unit composed of the encoder scale 424 and the encoder head 435 is sometimes referred to as an "encoder" hereinafter. Next, a method for ensuring the origin position, magnification, X-axis and Y-axis directions (rotation), and orthogonality of the stage using the reference plate 434 will be described with reference to FIG. 7. FIG. 7 is a view showing the wafer stage 43 from the +Z direction. While controlling the wafer observation camera 421 to capture (observe) an image of the mark 434a, when the mark 434a is disposed at the center of the image obtained by the wafer observation camera 421, the controller CNT obtains the measured value of the encoder and sets the measured value as the origin of the wafer stage 43. Then, while controlling the wafer observation camera 421 to capture (observe) an image of the mark 434b, when the mark 434b is disposed at the center of the image obtained by the wafer observation camera 421, the controller CNT obtains the measured value of the encoder. The controller CNT determines the Y-axis direction and Y magnification of the wafer stage 43 based on the obtained measured value. Next, while controlling the wafer observation camera 421 to capture (observe) an image of the mark 434c, when the mark 434c is disposed at the center of the image obtained by the wafer observation camera 421, the controller CNT obtains the measured value of the encoder. The controller CNT determines the X-axis direction and X magnification of the wafer stage 43 based on the obtained measured value. That is, the direction from the mark 434b on the reference plate 434 toward the mark 434a is defined as the Y-axis of the bonding device 100B, the direction from the mark 434c toward the mark 434a is defined as the X-axis of the bonding device 100B, and the directions and orthogonality of each axis are calibrated. In addition, the interval between the mark 434b and the mark 434a is defined as the scale in the Y direction of the bonding device 100B, the interval between the mark 434c and the mark 434a is defined as the scale in the X direction of the bonding device 100B, and calibration is performed. Since the scale of the encoder expands thermally due to temperature changes and the measured value is different from the actual value (distance), it is preferably performed calibration at any time to ensure the origin position, magnification, rotation, and orthogonality of the wafer stage 43. Here, the encoder may include a linear encoder for each drive stage. In this case, due to the increased variation factors between the wafer stage 43 and the measurement points of the encoder, a solution such as increasing the calibration frequency or using other measurement methods is required. If a plurality of encoder heads 435 are configured and selectively used according to, for example, the bonding position, etc., the floor area of the bonding device 100B can be reduced. Or, if a plurality of encoder heads 435 are configured at positions symmetrically sandwiching the bonding position and the measured values from the plurality of encoder heads 435 are used, the position measurement accuracy of the wafer stage 43 can be improved. In the above description, an example of performing calibration by capturing (observing) an image of the reference plate 434 has been described, but the present invention is not limited thereto. For example, calibration can be performed by a docking operation with a reference surface. Or, calibration can be performed by providing a calibration mechanism in the encoder and using a position measurement mechanism that guarantees an absolute value for accurate positioning. The bonding device 100B configured as described above operates similarly to the bonding device 100A according to the first embodiment. That is, in the bonding device 100B, the die 51 is also bonded to each of the plurality of regions on the wafer 6 according to the flowchart of FIG. 3. However, in the bonding device 100B, for example, in step S104 of FIG. 3, the alignment between the wafer 6 and the die 51 can be controlled based on the measured value of the encoder. <Third Embodiment> A third embodiment according to the present invention will be described. FIG. 8 is a schematic view showing a bonding device 100C according to the third embodiment. As shown in FIG. 8, the bonding device 100C according to the present embodiment drives a bonding head that holds a specific die, rather than driving a wafer stage 43 that holds a wafer, so as to align the wafer and the die and bond the die to the wafer. In FIG. 8, the direction perpendicular to the upper surface (target bonding surface) of the wafer 6 held by the wafer chuck 443 is defined as the Z direction, and the mutually orthogonal directions in the plane parallel to the upper surface of the wafer 6 are defined as the X direction and the Y direction. Note that the third embodiment basically inherits the first embodiment and can follow the first embodiment except for the matters mentioned below. The same reference numerals as in the first embodiment denote the same elements in the third embodiment, and the detailed description of these elements will be omitted. In the third embodiment, an example of the configuration for driving the bonding head (die 51) will be described. However, in addition to the bonding head, the wafer 6 can also be driven as in the first embodiment. In this case, the second embodiment can be applied. As shown in FIG. 8, the bonding device 100C of the present embodiment includes a pickup unit 3, a bonding unit 4, and a controller CNT. The pickup unit 3 and the controller CNT are the same as those of the bonding device 100A of the first embodiment, and thus the detailed description thereof will be omitted. The bonding unit 4 includes an upper base 42 and a lower base 44, and a surface treatment unit 46 is provided on one side of the lower base 44. The surface treatment unit 46 (treatment unit) performs a surface treatment on the holding surface of the die 51 in a state where the die 51 is held by the bonding head 453, such that the die 51 is disposed at the surface treatment position (such that the target bonding surface of the die 51 faces downward). As described in the first embodiment, the surface treatment unit 46 includes, for example, an atmospheric pressure plasma activation device, and as the surface treatment, performs an activation treatment for activating the surface state of the holding surface of the die 51. In addition, the surface treatment unit 46 may include a cleaning device, and performs (as the surface treatment) a cleaning treatment for cleaning the holding surface of the die 51. The surface treatment unit 46 may include a wettability device, and performs (as the surface treatment) a wettability treatment for making the holding surface of the die 51 wettable (hydrophilic). The bonding stage 45 is mounted on the upper base 42. The bonding stage 45 is configured to move in the X and Y directions along the lower surface of the upper base 42. More specifically, the bonding stage 45 includes a bonding head 453 for holding the die 51 and a driving unit 456 for driving the bonding head 453 (the die 51). The bonding head 453 holds the die 51 transferred from the pick-up head 31 by vacuum suction or the like. In the present embodiment, the pick-up head 31 picks up one die 51 from the dicing tape adhered to the dicing frame 5 and moves it from the pick-up unit 3 to the bonding unit 4. The target bonding surface of the die 51 picked up from the dicing tape by the pick-up head 31 faces upward. That is, the target bonding surface of the die 51 is held by the pick-up head 31. Therefore, during the movement from the pick-up unit 3 to the bonding unit 4, the pick-up head 31 rotates (flips) to turn the die 51 upside down and transfers it to the bonding head 453. Thus, the bonding head 453 can hold the die 51 while keeping the holding surface of the die 51 facing downward. In the present embodiment, since the surface treatment is performed in a state where the die 51 is held by the bonding head 453, the holding surface of the die 51 by the bonding head 453 is preferably made of a material that is not easily damaged by the surface treatment. The bonding of the die 51 to the wafer 6 can be completed by relatively driving the die 51 and the wafer 6 by the bonding head 453 and the wafer chuck 443 (wafer stage). The bonding of the die 51 to the wafer 6 can be performed by driving the die 51 in the -Z direction by using the bonding head 453 or by driving the wafer 6 in the +Z direction by using the wafer chuck 443 (wafer stage). The drive unit 456 includes actuators such as linear motors and is configured to drive the bonding head 453 (die 51) in the X and Y directions and the θZ direction. The drive unit 456 can be configured to drive the bonding head 453 (die 51) in the Z direction. The relative rotation operation of the wafer 6 and the die 51 in the θZ direction can be performed by rotating the die 51 using the bonding stage 45 (drive unit 456) and / or rotating the wafer 6 using the wafer chuck 443 (wafer stage). The drive unit 456 drives the bonding head 453, thereby moving the die 51 between the surface treatment position and the bonding process position. At the surface treatment position, the target bonding surface of the die 51 is surface-treated by the surface treatment unit 46, and at the bonding process position, the bonding process of bonding the die 51 to the wafer 6 is performed. That is, the drive unit 456 switches the position of the die 51 between the surface treatment position and the bonding process position. In the present embodiment, at the surface treatment position (first position) and the bonding process position (second position), the direction of the target bonding surface of the die 51 is downward. Therefore, the drive unit 456 is configured to drive the bonding head 453 translationally in the Y direction. Thereby, the die 51 can be moved between the surface treatment position and the bonding process position such that the target bonding surface of the die 51 faces the same direction at the surface treatment position and the bonding process position. The bonding stage 45 is provided with a surface mirror 452 for measuring the position of the bonding stage 45 in the X and Y directions. The surface mirror 452 serves as a target of the interferometer 442, which measures the position of the bonding stage 45 in the X and Y directions. The interferometer 442 is mounted on the lower base 44, irradiates the surface mirror 452 provided on the bonding stage 45 with light, and measures the position of the bonding stage 45 based on the reflected light from the surface mirror 452. The controller CNT can control the position of the bonding stage 45 (die 51) in the X and Y directions and the θZ direction based on the position of the bonding stage 45 measured by the interferometer 442. In addition, a wafer observation camera 451 (wafer image capturing device) is mounted on the bonding stage 45. The wafer observation camera 451 is a camera for observing the target bonding surface of the wafer 6. The wafer observation camera 451 can be configured such that it can capture an image of the wafer 6 in a state where the wafer 6 is held by the wafer chuck 443 (wafer stage). The wafer observation camera 451 is used to obtain (measure) information indicating the position of the pattern provided on the target bonding surface of the wafer 6. For example, the controller CNT uses known image processing techniques to detect the position of the feature points on the target bonding surface of the wafer 6 from the image obtained by capturing the target bonding surface of the wafer 6 by the wafer observation camera 451. Therefore, the controller CNT can measure the position of the pattern of the wafer 6 held by the wafer chuck 443 (wafer stage) in the X and Y directions and / or the θZ direction. Next, the mechanism installed on the lower base 44 will be described. The die observation camera 441 and the wafer chuck 443 are installed on the lower base 44. The wafer chuck 443 holds the wafer 6 (substrate) by vacuum suction or the like, and can be understood as a wafer stage. The die observation camera 441 (die image capturing device) is a camera for observing the target bonding surface of the die 51. The die observation camera 441 can be configured to be able to capture an image of the target bonding surface of the die 51 in a state where the die 51 is held by the bonding head 453, and the target bonding surface of the die 51 faces downward. In the present embodiment, when the bonding stage 45 moves to position the die 51 held by the bonding head 453 above the die observation camera 441, the die observation camera 441 captures (observes) an image of the target bonding surface of the die 51. The die observation camera 441 is used to obtain (measure) information indicating the position of the pattern provided on the target bonding surface of the die 51. For example, the controller CNT uses known image processing techniques to detect the position of the feature points on the target bonding surface of the die 51 from the image obtained by capturing the target bonding surface of the die 51 by the die observation camera 441. Therefore, the controller CNT can measure the position of the pattern of the die 51 held by the bonding head 453 in the X and Y directions and / or the θZ direction. Here, it is preferable to calibrate the relative positions between the wafer observation camera 451 and the die observation camera 441 to accurately reduce the bonding deviation between the wafer 6 and the die 51 in the bonding process. Therefore, for calibration, it is preferable to arrange (install) a mark on the bonding apparatus 100C that can be observed by one or both of the wafer observation camera 451 and the die observation camera 441. Next, a detailed example of the configuration of the bonding stage 45 will be described. FIG. 9 is a view showing the bonding stage 45 observed from the -Z direction. The bonding head 453 holds the die 51. To perform two-dimensional positioning, the bonding stage 45 includes a strip mirror 452x for performing position measurement in the X direction and the θZ direction, and a strip mirror 452y for performing position measurement in the Y direction. The strip mirror 452x is the target of the interferometers 442a and 442c that perform position measurement in the X direction. The interferometers 442a and 442c are arranged separately in the Y direction. The rotation amount (θZ direction) of the bonding stage 45 can be obtained from the difference between the measurement results of the interferometers 442a and 442c. The strip mirror 452y is the target of the interferometer 442b that performs position measurement in the Y direction. The interferometers 442a to 442c instantaneously measure the position of the bonding stage 45 in the X direction, the position in the Y direction, and the rotation amount in the θZ direction. The controller CNT can instantaneously perform feedback control on the driving of the bonding stage 45 and accurately perform two-dimensional positioning of the bonding stage 45. In the bonding apparatus 100C according to the present embodiment, by accurately measuring the position using the interferometers 442a to 442c and performing feedback control on the bonding stage 45 based on the result of the position measurement, the positioning mechanism of the bonding stage 45 can be functioned. A reference plate 454 including a plurality of marks 454a to 454c is mounted on the bonding stage 45. The reference plate 454 is made of a material having a low coefficient of thermal expansion and includes marks 454a to 454c formed (drawn) with high position accuracy. For example, the reference plate 454 can be formed by drawing marks on a quartz substrate by a drawing method using a semiconductor lithography process. The reference plate 454 can be configured to have a surface substantially flush with the surface of the die 51 held by the bonding head 453. In the present embodiment, the reference plate 454 can be observed by the die observation camera 441, but the present invention is not limited thereto when a reference plate observation camera is provided individually. The bonding stage 45 can be composed of a coarse movement stage and a fine movement stage. The coarse movement stage can be driven in a large range, and the fine movement stage can be accurately driven in a small range on the coarse movement stage. In this case, since the wafer observation camera 451, the strip mirror 452, the bonding head 453, and the reference plate 454 need to be accurately positioned, they are preferably fixed to the fine movement stage. A method for ensuring the origin position, magnification, X-axis and Y-axis directions (rotation), and orthogonality of the bonding stage 45 using the reference plate 454 will be described. While controlling the crystal observation camera 441 to capture (observe) an image of the mark 454a, when the mark 454a is disposed at the center of the image obtained by the crystal observation camera 441, the controller CNT obtains the measurement values of the interferometers 442a to 442c. The obtained measurement values are set as the origin of the bonding stage 45. Then, while controlling the crystal observation camera 441 to capture (observe) an image of the mark 454b, when the mark 454b is disposed at the center of the image obtained by the crystal observation camera 441, the controller CNT obtains the measurement values of the interferometers 442a to 442c. The controller CNT determines the Y-axis direction and Y magnification of the bonding stage 45 based on the obtained measurement values. Next, while controlling the crystal observation camera 441 to capture (observe) an image of the mark 454c, when the mark 454c is disposed at the center of the image obtained by the crystal observation camera 441, the controller CNT obtains the measurement values of the interferometers 442a to 442c. The controller CNT determines the X-axis direction and X magnification of the bonding stage 45 based on the obtained measurement values. That is, the direction from the mark 454b to the mark 454a on the reference plate 454 is defined as the Y-axis of the bonding apparatus 100C, the direction from the mark 454c to the mark 454a is defined as the X-axis of the bonding apparatus 100C, and the directions and orthogonality of the respective axes are calibrated. In addition, the interval between the mark 454b and the mark 454a is defined as the scale in the Y direction of the bonding apparatus 100C, the interval between the mark 454c and the mark 454a is defined as the scale in the X direction of the bonding apparatus 100C, and calibration is performed. Due to changes in atmospheric pressure and temperature, the refractive index of the optical path of the interferometer changes, which causes the measurement values to change. Therefore, the interferometers 442a to 442c preferably perform calibration at any timing and ensure the origin position, magnification, rotation, and orthogonality of the bonding stage 53. Note that in order to reduce the change in the measurement values of the interferometers 442a to 442c, the space in which the bonding stage 45 moves can be covered with a temperature control chamber to control the temperature. In the present embodiment, an example has been described in which the reference plate 454 is disposed on the bonding stage 45 and the image of the reference plate 454 is captured (observed) by the die observation camera 441. However, the present invention is not limited thereto. For example, the reference plate 454 may be disposed on the lower base 44 to capture (observe) the image of the reference plate 454 by the wafer observation camera 451. Even in this configuration, the origin position, magnification, rotation, and orthogonality of the bonding stage 45 can be ensured. In the present embodiment, an example has been described in which calibration is performed by capturing (observing) the image of the reference plate 454. However, the present invention is not limited thereto. For example, calibration may be performed by a docking operation with a reference surface. Alternatively, a position measuring mechanism such as a white interferometer that guarantees an absolute value may be used to perform accurate positioning of the bonding stage 45. In addition, in the present embodiment, since the position where bonding is performed (bonding process position) is separated from the point measured by the interferometer 442, correction of the Abbe error is also important. Error can also be reduced by performing measurements on both sides of the bonding stage 45. [Operation of Bonding Equipment] Hereinafter, the operation (bonding method) of the bonding equipment 100C according to the present embodiment will be described. The operation of the bonding equipment 100C according to the present embodiment can be executed according to the flowchart of FIG. 3. Hereinafter, matters different from the first embodiment will be described, and descriptions of matters the same as those in the first embodiment will be omitted. In step S101, the controller CNT uses a wafer transfer mechanism (not shown) to load the wafer 6 as the first object onto the wafer chuck 443 (wafer stage) of the bonding equipment 100C. After measuring the position of the wafer 6 in the rotational direction and the X and Y directions by a pre-alignment unit (not shown), the wafer 6 is roughly positioned based on the measurement results and transferred onto the wafer chuck 443. In step S102, the controller CNT performs wafer alignment using the wafer observation camera 451. In wafer alignment, the wafer observation camera 451 captures an image of the target bonding surface of the target region (bonding target) of the die 51 to be bonded in a plurality of regions of the wafer 6. Based on the obtained image, the position of the pattern provided in the target region is obtained. Focus adjustment when capturing the image of the target bonding surface of the wafer 6 can be performed by a focus adjustment mechanism provided in the wafer observation camera 451, or by driving the wafer 6 in the Z direction by the Z drive mechanism of the wafer chuck 443. When alignment marks are provided on the target bonding surface of the wafer 6, the alignment marks can be used to obtain the position of the pattern of the wafer 6. On the contrary, when no alignment marks are set on the target bonding surface of the wafer 6, feature points capable of specifying the position of the pattern of the wafer 6 can be used to obtain the position of the pattern of the wafer 6. As the feature points, for example, a part of the pattern of the wafer 6 can be used. For example, the controller CNT can measure the position of the pattern on the wafer 6 by measuring the image position of the projected alignment mark or feature point relative to the center of the image obtained by the wafer observation camera 451. Sometimes the alignment mark or feature point is referred to as an alignment mark or the like. For example, there is a method for accurately measuring the position of the alignment mark or the like relative to the reference point of the bonding device 100C. According to this method, the bonding stage 45 is driven in advance so that the mark formed on the reference plate 454 falls within the field of view of the image capture of the die observation camera 441, and the die observation camera 441 captures an image of the mark on the reference plate 454. Based on the position of the bonding stage 45 at this time and the position of the mark in the image obtained by the die observation camera 441, the reference point of the bonding device 100C is determined. Based on the image obtained by capturing the alignment mark or the like by the wafer observation camera 451, the offset amount of the position of the alignment mark or the like relative to the reference point is obtained. Therefore, the position of the alignment mark can be accurately measured from the position of the reference point and the offset amount. In the present embodiment, as the position of the reference point of the bonding device 100C, the position of a specific mark on the reference plate 454 is used. However, if it is a position used as a reference, the position of another location can be used. Since the interferometer 442 has a narrow measurement range in the rotational direction, the amount of rotation that the bonding stage 45 can correct is relatively small. If the amount of rotation of the wafer 6 is large, it is preferably to reposition the wafer 6 on the wafer chuck 443 to correct the amount of rotation of the wafer 6. When the wafer 6 is repositioned on the wafer chuck 443, it is necessary to measure the position of the wafer 6 again. During the execution of step S102, it is preferably to use a height measurement mechanism (not shown) for measuring the surface position (height) of the target bonding surface of the wafer 6 to measure the surface position of the wafer 6. This is because of the thickness variation of the wafer 6, and the surface position of the wafer 6 is important for accurately managing (controlling) the gap between the wafer 6 and the die 51 during the bonding process. The reference plate 454 is used to ensure the origin position, magnification, X-axis and Y-axis directions (rotation), and orthogonality of the bonding stage 45. Therefore, the position of the wafer 6 mounted on the wafer chuck 443 relative to the origin position of the bonding stage 45 and the like can be measured. On the wafer 6, regions (bonding targets or target regions) for forming semiconductor devices (patterns) are repeatedly arranged at a predetermined period, as described in the first embodiment. That is, the wafer 6 includes a plurality of regions to which the dies 51 are respectively bonded. The semiconductor devices in each region of the wafer 6 are accurately positioned and manufactured using semiconductor manufacturing equipment. The plurality of regions on the wafer 6 are usually accurately arranged at a repeating period with nanometer-level accuracy. For this reason, in the wafer alignment in step S102, it is not necessary to measure the positions of all regions on the wafer 6, but only the positions of some regions among the plurality of regions on the wafer 6. More specifically, the positions of the semiconductor devices (patterns or marks) in three or more regions among the plurality of regions on the wafer 6 are measured, and statistical processing is performed. Therefore, the region array on the wafer 6, the origin position of the array, the positions in the X and Y directions, the rotation amount in the θZ direction, the orthogonality, and the magnification error of the repeating period can be calculated. In addition, similar to the wafer chuck 433 according to the first embodiment, the wafer chuck 443 according to the present embodiment can also be provided with a mechanism configured to control the temperature of the wafer 6. Note that, in the present embodiment, the wafer 6 is used as the first object. If an interposer having wirings formed thereon is used as the first object, the array of the repeating wirings is measured instead of the array of the semiconductor devices. If a wafer or a panel without patterns is used as the first object, it is not necessary to perform the wafer alignment in step S102. In parallel with steps S101 and S102, which are processes regarding the wafer 6 as the first object, a process regarding the die 51 as the second object (steps S201 to S205) is performed. Note that steps S201 and S202 are the same as those described in the first embodiment, and the detailed description thereof will be omitted here. In step S203, the controller CNT transfers (delivers) the target die 51 picked up by the pick-up head 31 to the bonding head 453 of the bonding unit 4. More specifically, the controller CNT drives the pick-up head 31 to pick up the target die 51 in the X direction and perform a flipping operation (inverting operation), thereby disposing the pick-up head 31 below the bonding head 453. At this time, the bonding head 453 is driven (positioned) by the driving unit 456 such that the holding surface for holding the target die 51 faces downward. Then, the controller CNT transfers the target die 51 from the pick-up head 31 to the bonding head 453 by driving the pick-up head 31 in the +Z direction. In the present embodiment, an example has been described in which the pickup head 31 directly transports the target die 51 to the bonding head 453, but the present invention is not limited thereto. For example, when one or more transport mechanisms are provided on the transport path from the target die 51 to the bonding head 453, the target die 51 can be transported to the bonding head 453 via a process of transferring the target die 51 to one or more transport mechanisms. Additionally, if one or more die holders are provided in the transport path from the target die 51 to the bonding head 453, the pickup head 31 can transport the target die 51 to the bonding head 453 after re-holding the target die 51 using one or more die holders. In step S204, the controller CNT causes the surface treatment unit 46 to perform surface treatment on the target bonding surface of the target die 51 held by the bonding head 453. At this time, the bonding head 453 is driven (positioned) by the drive unit 456 such that the target die 51 is disposed at the surface treatment position (more specifically, above the surface treatment unit 46). In the present embodiment, it is possible to perform surface treatment on the holding surface of the target die 51 in a state where the target bonding surface of the target die 51 faces downward. As described above, the surface treatment includes activation treatment, and may also include cleaning treatment and / or wettability treatment. In step S205, the controller CNT causes the bonding stage 45 (drive unit 456) to translate and drive the bonding head 453 in the +Y direction such that the target die 51 held by the bonding head 453 is disposed at the bonding process position. Thereby, the target bonding surface of the target bonding die 51 held by the bonding head 453 can face the target bonding surface of the wafer 6. In step S103, the controller CNT performs die alignment using the die observation camera 441. In die alignment, the bonding stage 45 is driven such that the target die 51 held by the bonding head 453 is disposed above the die observation camera 441. Next, an image of the target bonding surface of the target die 51 is captured by the die observation camera 441, and the position of the pattern provided on the target bonding surface of the target die 51 is obtained based on the acquired image. The focus adjustment when capturing an image of the target bonding surface of the target die 51 can be performed by a focus adjustment mechanism provided in the die observation camera 441, or by driving the bonding head 453 (target die 51) in the Z direction by the Z drive mechanism of the bonding stage 45. When alignment marks are provided on the target bonding surface of the target die 51, the alignment marks can be used to obtain the position of the pattern of the target die 51. On the other hand, for general dies, alignment marks are often arranged on the scribe lines and removed together with the scribe lines. In this case, feature points capable of specifying the position of the pattern of the target die 51 can be used to obtain the position of the pattern of the target die 51. As the feature points, for example, the ends of pads or bump arrays arranged on the target bonding surface of the target die 51, regions having a non-periodic array, or the outer edge (outline) of the die, or the like can be used. For example, the controller CNT can measure the position of the pattern of the target die 51 by measuring the image position of the projected alignment marks or feature points relative to the center of the image obtained by the die observation camera 441. The measurement of the position of the target die 51 can include the measurement of the rotation amount (rotation in the θZ direction) of the target die 51. The rotation amount of the target die 51 can be obtained, for example, based on the positions of a plurality of feature points on the target bonding surface of the target die 51 obtained from the image obtained by the die observation camera 441. The positions of the plurality of feature points can be obtained based on a plurality of images obtained by individually capturing the feature points by the die observation camera 441 while the target die 51 is being driven by the bonding stage 45. Alternatively, when the entire target die 51 falls within the field of view of the image capture of the die observation camera 441, the positions of the plurality of feature points can be obtained from the image obtained by capturing the entire target bonding surface of the target die 51 using the die observation camera 441. In the bonding process, by rotating the object die 51 using the bonding stage 45, the rotation amount of the object die 51 can be corrected. However, the measurement range of the interferometer 442 in the rotation direction is narrow. Therefore, if the rotation amount of the target die 51 is large, it is desirable to reposition the target die 51 on the bonding head 453 to correct the rotation amount of the target die 51. When the target die 51 is repositioned on the bonding head 453, the position of the target die 51 needs to be measured again. During the execution of step S103, preferably, a height measuring mechanism (not shown) for measuring the surface position (height) of the target bonding surface of the target die 51 is used to measure the surface position of the target die 51. Due to the thickness variation of the target die 51, the surface position of the target die 51 is important for accurately managing (controlling) the gap between the wafer 6 and the target die 51 during the bonding process. In addition, the heights of a plurality of points on the target bonding surface of the target die 51 (i.e., the height distribution of the target bonding surface of the target die 51) can be measured to adjust the relative postures of the wafer 6 and the target die 51 based on the measurement results during the bonding process. The relative postures can be adjusted by a tilting mechanism mounted on the bonding stage 45 and / or the wafer chuck 443. In step S104, the controller CNT drives the bonding stage 45 to align the wafer 6 and the target die 51 such that the patterns of the wafer 6 and the target die 51 overlap each other. More specifically, the controller CNT drives the bonding stage 45 such that the target die 51 held by the bonding head 453 is disposed above the target area of the wafer 6 where the target die 51 is to be bonded. Then, the controller CNT aligns the wafer 6 and the target die 51 based on the position of the pattern of the wafer 6 obtained in step S102 and the position of the pattern of the target die 51 obtained in step S103. At this time, the wafer 6 and the target die 51 are preferably aligned to reduce the relative rotational deviation and / or posture deviation between the wafer 6 and the target die 51. If a change (displacement) in the relative position between the wafer 6 and the target die 51 is predicted when bonding the wafer 6 and the target die 51, the change in the relative position can be used as an offset amount to align the wafer 6 and the target die 51. The offset amount can be obtained in advance by experiments, simulations, etc. The offset amount determination method (management method) will be described later. In step S105, the controller CNT bonds the target die 51 to the wafer 6 (bonding process) by reducing the interval between the wafer 6 and the target die 51. The bonding process can be performed by driving the target die 51 in the Z direction using the bonding head 453 or driving the wafer 6 in the Z direction using the wafer chuck 443. Alternatively, the bonding process can be performed by relatively driving the target die 51 and the wafer 6 in the Z direction using the bonding head 453 and the wafer chuck 443. To accurately control the interval between the wafer 6 and the target die 51, preferably, a detector (e.g., an encoder) is provided which detects the position of the bonding head 453 and / or the wafer chuck 443 in the Z direction and performs feedback control according to the detection results of the detector. In order to improve the alignment accuracy between the wafer 6 and the target die 51 even during the execution of the bonding process, the relative positions between the wafer 6 and the target die 51 in the X and Y directions can be controlled. In this case, preferably, the width of the mirror 452 in the Z direction is set such that even when the bonding stage 45 is driven in the Z direction, the mirror 452 can be irradiated with light from the interferometer 442. A detector (e.g., an encoder, a gap sensor) can also be provided, which detects the relative positions between the bonding head 453 and the wafer chuck 443 in the X and Y directions. In this case, during the execution of the bonding process, while the detector detects (monitors) the relative positions between the bonding head 453 and the wafer chuck 443 in the X and Y directions, feedback control of the relative positions can be performed. In order to accurately control the interval between the target die 51 and the wafer 6, a measuring unit (e.g., a linear encoder) configured to measure the relative position between the bonding head 453 and the wafer chuck 443 in the Z direction can be provided. Note that if the wafer 6 and the target die 51 are in contact with each other, the position of the bonding stage 45 feedback-controlled based on the measurement result of the interferometer 442 is restricted. Therefore, preferably, the control method of the relative positions between the wafer 6 and the target die 51 in the X and Y directions is switched before and after contact by, for example, stopping the feedback process at the start of the contact between the wafer 6 and the target die 51. In addition, in the bump bonding, the processes required for the bump bonding can be performed in step S105, for example, pressing the target die 51 against the wafer 6 with a predetermined pressure (pressing pressure). In the hybrid bonding, the process of applying an impact serving as a trigger for the start of the bonding can be performed in step S105. The process of observing the bonding state (bonding deviation amount) between the wafer 6 and the target die 51 after the bonding can also be performed in step S105. Here, from the start of holding by the bonding head 453 in step S203 until the end of the bonding between the wafer 6 and the target die 51 in step S105, the target die 51 is held by the bonding head 453. That is, the holding of the target die 51 by the bonding head 453 is not released. After the bonding between the wafer 6 and the target die 51 in step S105 ends, the controller CNT releases the holding of the target die 51 by the bonding head 453 and increases the interval between the wafer chuck 443 and the bonding head 453. Note that it can be understood that the bonding process includes the alignment between the wafer 6 and the target die 51 in step S104 described above. Please note that steps S106 and S107 are the same as those described in the first embodiment, and the detailed description thereof will be omitted here. Note that if there are a plurality of bonding stages 45 on which the bonding heads 453 are mounted, the bonding processes for two or more regions for bonding the target die 51 to the wafer 6 can be performed in parallel. [Offset Determination Method] The following will describe the method (management method) for determining the offset that can be used in step S104 above. As described above, when aligning the target die 51 with the target area of the wafer 6 based on the position of the target die 51 measured by the die observation camera 441 and the position of the target area of the wafer 6 measured by the wafer observation camera 451, the offset can be reflected. The offset determination method of this embodiment can be executed according to the flowchart of FIG. 5. Hereinafter, matters different from the first embodiment will be described, and descriptions of matters the same as those of the first embodiment will be omitted. In step S301, the controller CNT uses a wafer transfer mechanism (not shown) to load the wafer 6 as the first object onto the wafer chuck 443 of the bonding device 100C. On the wafer 6, marks used for wafer alignment and marks used for measuring the bonding deviation amount are formed. The wafer 6 preferably undergoes a process such as applying a temporary adhesive to reduce the positional deviation of the test die relative to the wafer 6 (target area) that occurs when bonding the test die. After measuring the position of the wafer 6 in the rotational direction and the X and Y directions by a pre-alignment unit (not shown), the wafer 6 is roughly positioned based on the measurement results and transferred onto the wafer chuck 443. In step S302, the controller CNT performs wafer alignment using the wafer observation camera 451. For example, the controller CNT uses the wafer observation camera 451 to detect the alignment marks on the wafer 6 and measures the mounting position and rotation amount of the wafer 6 on the wafer chuck 443. Step S302 is the same process as step S102 above, and its detailed description is omitted here. During the execution of step S302, a height measurement mechanism (not shown) for measuring the surface position (height) of the target bonding surface of the wafer 6 is preferably used to measure the surface position of the wafer 6. This is because the thickness of the wafer 6 changes, and the surface position of the wafer 6 is important for accurately managing (controlling) the gap between the wafer 6 and the test die during the bonding process. In step S303, the controller CNT mounts the test die, which is the second object, on the bonding head 453. Next, in step S304, the controller CNT performs die alignment using the die observation camera 441. For example, the controller CNT uses the die observation camera 441 to detect the alignment marks on the test die and measures the position and rotation amount of the test die held by the bonding head 453. Step S304 is the same process as step S103 described above, and its detailed description is omitted here. During the execution of step S304, it is preferably to measure the surface position (height) of the target bonding surface of the test die using a height measurement mechanism (not shown). This is because the thickness of the test die varies, and the surface position of the test die is important for accurately managing (controlling) the gap between the wafer 6 and the test die during the bonding process. In addition, the heights of a plurality of points on the target bonding surface of the test die can be measured to adjust the relative posture of the wafer 6 and the test die based on the measurement results during the bonding process. The relative posture can be adjusted by a tilting mechanism mounted on the bonding stage 45 and / or the bonding head 453. In step S305, the controller CNT drives the bonding stage 45 to perform alignment between the wafer 6 and the test die so that the test die is disposed above the target area of the wafer 6. More specifically, the controller CNT performs alignment between the wafer 6 and the test die based on the position and rotation amount of the wafer 6 measured in step S302 and the position and rotation amount of the test die measured in step S304. Alignment can be performed so that the patterns (pads) of the target area of the wafer 6 and the patterns (pads) of the test die overlap each other. Step S305 is the same process as step S104 described above, and its detailed description is omitted here. In step S306, the controller CNT bonds the test die to the wafer 6 (bonding process). Step S306 is the same process as step S105 described above, and its detailed description is omitted here. Next, in step S307, the controller CNT measures the bonding deviation amount between the target area of the wafer 6 and the test die using the wafer observation camera 451. For example, the controller CNT drives the bonding stage 45 so that the bonding point of the test die on the wafer 6 is disposed below the wafer observation camera 451. Then, the controller CNT causes the wafer observation camera 451 to capture an image of the bonding point and measures the bonding deviation amount (position deviation amount or overlap error) between the wafer 6 (target area) and the test die in the X and Y directions and / or the θZ direction based on the obtained image. In step S308, the controller CNT calculates the offset based on the bonding deviation amount measured in step S307. For example, the controller CNT calculates the position deviation amounts in the X and Y directions and the rotation amount in the θZ direction for reducing the bonding deviation amount measured in step S307 as the offset. In the above description, an offset is calculated for one area of one test die for the bonding of the wafer 6. However, it is preferably to use a plurality of test dies to calculate the offset for each of a plurality of areas on the wafer 6. The plurality of areas on the wafer 6 are preferably set to positions corresponding to the plurality of areas where a plurality of dies 51 are bonded in the actual process. In addition, a representative value of the offsets calculated for the plurality of areas on the wafer 6 can be shared among the plurality of areas. Examples of the representative value are an average value, a maximum value, and a mode. If the offset changes according to the position of the wafer 6, the offset can be calculated individually for each of the plurality of areas on the wafer 6. An example of performing alignment between the wafer 6 and the target die 51 in step S104 of FIG. 3 using the offset calculated in the above manner will be described here. Note that the symbols change according to the definition method of the coordinate directions, but follow the coordinate system shown in each of the following figures. Let (Wx, Wy) be the position of the target area of the wafer 6 relative to the reference point measured in step S102, and Wθ be the rotation amount. Let (Dx, Dy) be the position of the target die 51 relative to the center of gravity (center) of the image obtained by the die observation camera 441 in step S103, and Dθ be the rotation amount. Let (Px, Py) be the amount of displacement (displacement amount) between the wafer 6 and the target die 51 when bonding the wafer 6 and the target die 51, and Pθ be the rotation amount. In addition, as the offset obtained in step S308, let (X0, Y0) be the position deviation amounts in the X and Y directions, and θ0 be the rotation amount in the θZ direction. If the offset is correctly obtained in step S308, then Wx = Wy = Wθ = Dx = Dy = Dθ = 0. Therefore, when bonding the target die 51 to the wafer 6, alignment between the wafer 6 and the target die 51 is performed in step S104 such that the target die 51 is deviated from the target area of the wafer 6 by the offset. That is, the bonding stage 45 is configured such that the position deviation amounts in the X and Y directions are (X0, Y0), and the rotation amount in the θZ direction is θ0, and the object die 51 is bonded to the wafer 6. This enables the bonding process to be accurately performed with high position accuracy. If the position of the wafer 6 deviates during the bonding process, for example, if the position of the wafer 6 deviates in the positive direction, the bonding stage 45 moves in the positive direction to correct the deviation of the wafer 6. More specifically, during the bonding process, the bonding stage 45 is configured such that the amount of position deviation in the X and Y directions is (X0 + Wx, Y0 + Wy), and the amount of rotation in the θZ direction is (θ0 + Wθ). If the position of the target die 51 deviates during the bonding process, for example, if the position of the target die 51 deviates in the positive direction, the bonding stage 45 moves in the negative direction to correct the deviation of the target die 51. More specifically, during the bonding process, the bonding stage 45 is configured such that the amount of position deviation in the X and Y directions is (X0 + Wx - Dx, Y0 + Wy - Dy), and the amount of rotation in the θZ direction is (θ0 + Wθ - Dθ). If a displacement amount is generated during the bonding process, the position of the amount of displacement is set as the bonding position. For example, if a displacement amount is generated in the positive direction, the bonding stage 45 is moved by the same amount in the opposite direction (i.e., in the negative direction), and then the bonding process is performed. More specifically, during the bonding process, the bonding stage 45 is configured such that the amount of position deviation in the X and Y directions is (X0 + Wx - Dx - Px, Y0 + Wy - Dy - Py), and the amount of rotation in the θZ direction is (θ0 + Wθ - Dθ - Pθ). As described above, the bonding apparatus 100C according to the present embodiment includes a surface treatment unit 46 that performs surface treatment on the target bonding surface of the die 51 while the die 51 is held by the bonding head 453. In the bonding apparatus 100C, after the surface treatment is performed by the surface treatment unit 46, the bonding process of aligning the wafer 6 and the die 51 and bonding the die 51 to the wafer 6 is performed without releasing the holding of the die 51 by the bonding head 453. Thus, between the surface treatment and the bonding process, contact between other components and the target bonding surface of the die 51 can be avoided, the time from the surface treatment to the bonding process can be shortened, and the bonding strength between the wafer 6 and the die 51 can be improved. <Fourth Embodiment> A fourth embodiment of the present invention will be described. FIG. 10 is a schematic view showing a bonding apparatus 100D according to the fourth embodiment. As shown in FIG. 10, the bonding apparatus 100D of the present embodiment uses an encoder to measure the position of the bonding stage. Note that the fourth embodiment basically inherits the third embodiment and may follow the third embodiment except for the matters mentioned below. The bonding apparatus 100D of the fourth embodiment is different from the bonding apparatus 100C of the third embodiment shown in FIG. 8 in that an encoder scale 444 and an encoder head 455 are provided instead of the interferometer 442 and the bar mirror 452. In the bonding apparatus 100D according to the fourth embodiment, the encoder head 455 is provided on the bonding stage 45, and the encoder scale 444 is mounted on the lower base 44. In the encoder scale 444, a two-dimensional scale is formed on a plane so that two-dimensional positioning can be performed. By detecting the scale with the encoder head 455, the position of the bonding stage 45 can be measured two-dimensionally. Preferably, the encoder scale 444 has a low coefficient of thermal expansion and is formed (drawn) with high position accuracy. As an example of the encoder scale 444, the scale is drawn on a quartz substrate using a drawing method of semiconductor lithography process. Here, the bonding stage 45 may be composed of a coarse movement stage and a fine movement stage. The coarse movement stage can be driven over a large range, and the fine movement stage can be accurately driven within a small range on the coarse movement stage. In this case, in order to perform accurate positioning, the encoder head 455 is preferably fixed to the fine movement stage. The positioning mechanism according to the present embodiment includes accurate position measurement by an encoder and feedback control based on the result. In addition, the unit composed of the encoder scale 444 and the encoder head 455 is sometimes referred to as an "encoder" hereinafter. Next, a method for ensuring the origin position, magnification, X-axis and Y-axis directions (rotation), and orthogonality of the stage using the reference plate 454 will be described with reference to FIG. 11. FIG. 11 is a view showing the bonding stage 45 from the -Z direction. While controlling the die observation camera 441 to capture (observe) an image of the mark 454a, when the mark 454a is disposed at the center of the image obtained by the die observation camera 441, the controller CNT obtains the measured value of the encoder and sets the measured value as the origin of the bonding stage 45. Then, while controlling the die observation camera 441 to capture (observe) an image of the mark 454b, when the mark 454b is disposed at the center of the image obtained by the die observation camera 441, the controller CNT obtains the measured value of the encoder. The controller CNT determines the Y-axis direction and Y magnification of the bonding stage 45 based on the obtained measured value. Next, while controlling the die observation camera 441 to capture (observe) an image of the mark 454c, when the mark 454c is disposed at the center of the image obtained by the die observation camera 441, the controller CNT obtains the measured value of the encoder. The controller CNT determines the X-axis direction and X magnification of the bonding stage 45 based on the obtained measured value. That is, the direction from the mark 454b on the reference plate 454 toward the mark 454a is defined as the Y-axis of the bonding apparatus 100D, the direction from the mark 454c toward the mark 454a is defined as the X-axis of the bonding apparatus 100D, and the directions and orthogonality of each axis are calibrated. In addition, the interval between the mark 454b and the mark 454a is defined as the scale in the Y direction of the bonding apparatus 100D, the interval between the mark 454c and the mark 454a is defined as the scale in the X direction of the bonding apparatus 100D, and calibration is performed. Since the scale of the encoder thermally expands due to temperature changes and the measured value is different from the actual value (distance), it is preferably performed calibration at any time to ensure the origin position, magnification, rotation, and orthogonality of the bonding stage 45. Here, the encoder may include linear encoders for each drive stage. In this case, due to the increased factors of variation between the bonding stage 45 and the measurement points of the encoder, solutions such as increasing the calibration frequency or using other measurement methods are required. If a plurality of encoder heads 455 are configured and selectively used according to, for example, the bonding position, etc., the floor area of the bonding device 100D can be reduced. Alternatively, if a plurality of encoder heads 455 are configured at positions symmetrically sandwiching the bonding position and the measurement values from the plurality of encoder heads 455 are used, the position measurement accuracy of the bonding stage 45 can be improved. In the above description, an example of performing calibration by capturing (observing) an image of the reference plate 454 has been described, but the present invention is not limited thereto. For example, calibration can be performed by a docking operation with a reference surface. Alternatively, accurate positioning can be performed by providing a calibration mechanism in the encoder and using a position measurement mechanism that guarantees absolute values. The bonding device 100D configured as described above operates similarly to the bonding device 100C according to the third embodiment. That is, in the bonding device 100D, the die 51 is also bonded to each of the plurality of regions on the wafer 6 according to the flowchart of FIG. 3. However, in the bonding device 100D, for example, in step S104 of FIG. 3, the alignment between the wafer 6 and the die 51 can be controlled based on the measurement value of the encoder. <Embodiment of the method for manufacturing an article> A method for manufacturing an article (semiconductor IC element, liquid crystal display element, MEMS, etc.) using the above-described bonding device will be described. The method for manufacturing an article according to an embodiment of the present invention is suitable for manufacturing articles such as micro devices like semiconductor devices or components having a fine structure. The method for manufacturing an article of the present embodiment includes: a step of bonding a second object to each of a plurality of regions of a first object using the above-described bonding device or bonding method; and a step of processing the first object to which the second object is bonded to each of the plurality of regions. The manufacturing method further includes other known processes (for example, detection, cutting, bonding, and packaging). Compared with the conventional method, the method for manufacturing an article according to the present embodiment is advantageous in at least one of the performance, quality, productivity, and production cost of the article. <Other Embodiments> Embodiment(s) of the present invention may also be implemented by a computer of a system or device or by a method executed by a computer of a system or device. The system or device reads and executes computer-executable instructions (such as one or more programs) recorded on a storage medium (which may also be more comprehensively referred to as a "non-transitory computer-readable storage medium") to perform the functions of the above-described one or more embodiments and / or includes one or more circuits (such as an application-specific integrated circuit (ASIC)) to perform the functions of the above-described one or more embodiments. And the method reads and executes computer-executable instructions from a storage medium (for example) to perform the functions of the above-described one or more embodiments and / or controls one or more circuits to perform the functions of the above-described one or more embodiments. The computer may include one or more processors (for example, a central processing unit (CPU), a microprocessing unit (MPU)) and may include an individual computer or a network of individual processors to read and execute computer-executable instructions. The computer-executable instructions may be provided to the computer from a network or a storage medium, for example. The storage medium may include, for example, one or more of a hard disk, a random access memory (RAM), a read-only memory (ROM), a storage of a distributed computing system, an optical disc (such as a compact disc (CD)), a digital versatile disc (DVD), or a Blu-ray Disc™, a flash memory device, a memory card, etc. Although the present invention has been described with reference to exemplary embodiments, it should be understood that the present invention is not limited to the disclosed exemplary embodiments. The scope of the appended claims should be accorded the broadest interpretation so as to encompass all such modifications as well as equivalent structures and functions. 1: Base 2: Fixed base 3: Pick-up unit 4: Bonding unit 5: Cutting frame 6: Wafer 31: Pick-up head 32: Release head 33: Frame holder 41: Stage base 42: Upper base 43: Wafer stage 44: Lower base 45: Bonding stage 46: Surface treatment unit 51: Chip 100A: Bonding equipment 100B: Bonding equipment 100C: Bonding equipment 100D: Bonding equipment 421: Wafer observation camera 422: Interferometer 422a: Interferometer 422b: Interferometer 422c: Interferometer 423: Bonding head 424: Encoder scale 425: Driving unit 431: Chip observation camera 432: Mirror 432x: Strip mirror 432y: Strip mirror 433: Wafer chuck 434: Reference plate 434a: Mark 434b: Mark 434c: Mark 435: Encoder head 436: Driving mechanism 441: Wafer observation camera 442: Interferometer 442a: Interferometer 442b: Interferometer 442c: Interferometer 443: Wafer chuck 444: Encoder scale 451: Chip observation camera 452: Mirror 452x: Strip mirror 452y: Strip mirror 453: Bonding head 454: Reference plate 454a: Mark 454b: Mark 454c: Mark 455: Encoder head 456: Driving unit L: Axis CNT: Controller S101: Step S102: Step S103: Step S104: Step S105: Step S106: Step S107: Step S201: Step S202: Step S203: Step S204: Step S205: Step S301: Step S302: Step S303: Step S304: Step S305: Step S306: Step S307: Step S308: Step [Fig. 1] is a schematic view showing a bonding equipment according to the first embodiment; [Fig. 2] is a schematic view showing an example of the configuration of a wafer stage according to the first embodiment; [Fig. 3] is a flowchart showing the operation procedure of the bonding equipment; [Figs. 4A] to [4C] are views for explaining the operation of the bonding equipment; [Fig. 5] is a flowchart showing a method for determining an offset; [Fig. 6] is a schematic view showing a bonding equipment according to the second embodiment; [Fig. 7] is a schematic view showing an example of the configuration of a wafer stage according to the second embodiment; [Fig. 8] is a schematic view showing a bonding equipment according to the third embodiment; [Fig. 9] is a schematic view showing an example of the configuration of the bonding stage, according to the third embodiment; [Fig. 10] is a schematic view showing the bonding apparatus, according to the fourth embodiment; and [Fig. 11] is a schematic view showing an example of the configuration of the bonding stage, according to the fourth embodiment. 1: Base 2: Fixed base 3: Pickup unit 4: Bonding unit 5: Cutting frame 6: Wafer 31: Pickup head 32: Release head 33: Frame holder 41: Stage base 42: Upper base 43: Wafer stage 46: Surface treatment unit 51: Chip 100A: Bonding apparatus 421: Wafer observation camera 422: Interferometer 423: Bonding head 425: Driving unit 431: Chip observation camera 432: Mirror 433: Wafer chuck 436: Driving mechanism CNT: Controller L: Axis

Claims

1. A bonding apparatus for performing a bonding process, bonding a second object to one of a plurality of regions in a first object, comprising: A holder, configured to hold the second object; A surface treatment apparatus configured to perform surface treatment, comprising activating the surface state of the target mating surface of the second object held by the holder; A driver configured to drive the holder to move the second object between a first position where the surface treatment is performed and a second position where the bonding process is performed; The controller is configured to control the bonding process by performing the surface treatment on the second object using the surface treatment apparatus, such that the second object is bonded to one of the plurality of regions while being held by the holder, wherein the drive is configured to rotatably drive the holder so that the target bonding surface of the second object faces different directions at the first position and the second position.

2. The equipment as requested in item 1, wherein, The driver is configured to rotate the holder so that the orientation of the target engagement surface of the second object is reversed between the first position and the second position.

3. The equipment as requested in item 1, wherein, After the alignment between the first object and the second object held by the holder is performed, the controller is configured to control the engagement process.

4. The apparatus of claim 3, further comprising an image capturing device configured to capture an image of the target mating surface of the second object disposed at the second position, wherein, The controller is configured to perform alignment between the first object and the second object held by the holder based on the image obtained by the image capturing device.

5. The equipment as requested in any of items 1 to 4, wherein, The surface treatment includes cleaning the target mating surface of the second object.

6. Equipment as requested in any of items 1 to 4, wherein, The surface treatment includes making the target bonding surface of the second object hydrophilic.

7. The equipment as requested in any of items 1 to 4, wherein, The holder holds the surface of the second object on the opposite side of the target engagement surface.

8. The device of any one of claims 1 to 4 further includes a pickup unit configured to pick up a second object from a plurality of second objects supported by a support member and to transfer the second object to the holder.

9. A joining method for joining a second object to one of a plurality of regions in a first object, comprising: The holder holds the second object in place; Performing a surface treatment includes activating the surface state of the target mating surface of the second object held by the holder; after performing the surface treatment, driving the holder to move the second object between a first position where the surface treatment was performed and a second position where the second object is to be mated; And, while the second object to be joined is held by the holder, the second object is joined to one of the plurality of regions, wherein driving the holder includes rotating the holder so that the target joining surface of the second object faces different directions at the first position and the second position.

10. A method for manufacturing an article, comprising: Using the joining method defined in request item 9, join the second object to one of the multiple regions in the first object; The first object in which the second object is joined to one of the plurality of regions; And to manufacture articles from the processed first object.

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