Compositions for polishing hardmasks and related systems and methods

Abstract

The present invention relates to a system for polishing a hard mask, comprising a composition containing permanganate ions of a permanganate oxidant; a substrate comprising a hard mask containing at least one of a non-carbon boron component, a boron-carbon component, a non-carbon silicon component, a non-carbon chromium component, a non-carbon zirconium component, or any combination thereof; and a chemical mechanical planarization (CMP) apparatus configured to contact the composition with the substrate to remove at least a portion of the hard mask from the substrate.

Description

Compositions for polishing hard masks and related systems and methods The present invention relates to compositions for polishing hard masks and related systems and related methods. A substrate that has been planarized and polished can be patterned using materials having insulating, conductive, and semiconductive properties. The resulting substrate can be suitable for semiconductor manufacturing. Some embodiments relate to a system including a composition that includes permanganate ions of a permanganate oxidant; a substrate including a hard mask that includes at least one of a non-carbon boron component, a boron-carbon component, a non-carbon silicon component, a non-carbon chromium component, a non-carbon zirconium component, or any combination thereof; and a chemical mechanical planarization (CMP) apparatus that is configured to bring the composition into contact with the substrate to remove at least a portion of the hard mask of the substrate. Some embodiments relate to a method that includes one or more of the following steps: obtaining a substrate including a hard mask that includes at least one of a boron component, a silicon component, a chromium component, a zirconium component, or any combination thereof; obtaining a composition that includes permanganate ions of a permanganate oxidant; and using a chemical mechanical planarization apparatus to bring the composition and the hard mask into sufficient contact to remove at least a portion of the hard mask. Some embodiments relate to a composition that includes permanganate ions of a permanganate oxidant. In some embodiments, the composition removes at least a portion of the hard mask when brought into contact with the hard mask using a chemical mechanical planarization apparatus. In some embodiments, the hard mask includes at least one of a non-carbon boron component, a boron-carbon component, a non-carbon silicon component, a non-carbon chromium component, a non-carbon zirconium component, or any combination thereof. Among the benefits and improvements disclosed herein, other objects and advantages of the present invention will be apparent from the description taken in conjunction with the accompanying drawings. Specific embodiments of the invention are disclosed herein; however, it is to be understood that the disclosed embodiments are merely illustrative of the invention that can be embodied in various forms. Further, each example given in connection with the various embodiments of the invention is intended to be illustrative and not restrictive. Any prior patents and publications referenced herein are incorporated by reference in their entirety. In this specification and the claims, unless clearly stated otherwise herein, the following terms have the meanings specifically associated with them in this document. The phrases "in one embodiment," "in an embodiment," and "in some embodiments" as used herein do not necessarily refer to the same embodiment, although they may. Further, the phrases "in another embodiment" and "in some other embodiments" as used herein do not necessarily refer to different embodiments, although they may. All embodiments of the invention are intended to be combinable without departing from the scope or spirit of the invention. As used herein, unless clearly specified otherwise herein, the term "based on" is not exclusive and allows for other factors not described. Further, throughout this specification, the meanings of "a", "an", and "the" include plural referents. The meaning of "in" includes "in" and "on". Chemical mechanical planarization (CMP) is a process in which material is removed from the surface of a substrate, such as a silicon wafer, and the surface is planarized and polished by a physical process (such as abrasion, etc.) and a chemical process (such as oxidation, chelation, etc.). To perform the CMP process, a slurry is applied to the surface of the substrate using CMP equipment that is structurally designed to perform the removal, planarization, and polishing processes. For suitability for polishing applications, the slurry should exhibit suitable performance in terms of selectivity and removal rate, while providing a degree of control and adjustability therewith. The slurry should also be adjustable in terms of the operating pH range, type of polishing pad, etc. When the material to be removed from the surface of the substrate is a hard material (or hard mask), conventional slurries cannot meet the performance requirements for polishing such materials. Embodiments disclosed herein provide compositions that at least overcome the above challenges and disadvantages. For example, some embodiments relate to compositions comprising permanganate ions of a permanganate oxidant. The compositions disclosed herein can be used for polishing a hard mask using chemical mechanical planarization equipment. The compositions disclosed herein can exhibit excellent polishing performance in terms of selectivity and removal rate, while also providing control and adjustability therewith, as well as in terms of the operating pH range, type of polishing pad, etc. The embodiments disclosed herein further particularly provide related systems and related methods comprising the compositions disclosed herein. Figure 1 is a schematic diagram of a system 100 for polishing a hard mask according to some embodiments. As Figure As shown in 1, the system 100 for polishing a hard mask includes a chemical mechanical planarization device (CMP device 200). The CMP device 200 includes a polishing head 205 mounted on a carrier 210, a platen 215, and a polishing pad 220 on the platen 215. The polishing head 205 is structurally designed to hold the substrate 300 and bring the substrate 300 into contact with the polishing pad 220. The polishing pad 220 is structurally designed to rotate to polish the surface of the substrate 300 using the composition 400. The composition 400 is supplied to the substrate 300 from an inlet 225. The inlet 225 is fluidly coupled to a valve 230 for delivering the composition 400 from a source (not shown). In some embodiments, the composition 500 is supplied to the substrate 300 from an inlet 235. The inlet 235 is fluidly coupled to a valve 240 for delivering the composition 500 from a source (not shown). In some embodiments, a process controller 245 (such as a microprocessor, a microcontroller, etc.) is communicatively coupled to the valve 230 and the valve 240 for supplying the composition 400 and / or the composition 500 to the substrate 300. In some embodiments, the CMP device 200 includes a water supply 250. The substrate 300 includes a hard material on the surface of the substrate. In some embodiments, the hard material is provided on the surface of a silicon wafer. In some embodiments, the hard material exists in the form of a film on the surface of the substrate. In some embodiments, the hard material on the surface of the substrate is referred to herein as a hard mask. In some embodiments, the hard mask does not contain carbon. In some embodiments, the term "non-carbon", when used as a modifier, refers to a material that does not contain carbon. In some embodiments, the hard mask includes at least one of a non-carbon boron component, a non-carbon silicon component, a non-carbon chromium component, a non-carbon zirconium component, or any combination thereof. In some embodiments, the hard mask includes boron and amorphous silicon. In some embodiments, the hard mask includes chromium and chromium oxide. In some embodiments, the hard mask includes polysilicon and doped polysilicon. In some embodiments, the hard mask includes silicon dioxide. In some embodiments, the hard mask includes zirconium oxide. In some embodiments, the hard mask includes a boron-carbon component or consists of a boron-carbon component. In some embodiments, the hard mask includes boron and carbon or consists of boron and carbon. In some embodiments, the hard mask includes a boron component and a carbon component or consists of a boron component and a carbon component. In some embodiments, the hard mask comprises a boron component in an amount of 1 wt% to 99 wt% or any range or sub-range therebetween, based on the total weight of the hard mask. In some embodiments, the hard mask comprises a boron component in an amount of 10 wt% to 99 wt%, 20 wt% to 99 wt%, 30 wt% to 99 wt%, 40 wt% to 99 wt%, 50 wt% to 99 wt%, 60 wt% to 99 wt%, 65 wt% to 99 wt%, 70 wt% to 99 wt%, 75 wt% to 99 wt%, 80 wt% to 99 wt%, 85 wt% to 99 wt%, 90 wt% to 99 wt%, 95 wt% to 99 wt%, 1 wt% to 90 wt%, 1 wt% to 80 wt%, 1 wt% to 70 wt%, 1 wt% to 60 wt%, 1 wt% to 50 wt%, 1 wt% to 40 wt%, 1 wt% to 30 wt%, 1 wt% to 20 wt%, or 1 wt% or 10 wt%, based on the total weight of the hard mask. In some embodiments, the hard mask comprises a carbon component in an amount of 1 wt% to 99 wt% or any range or sub-range therebetween, based on the total weight of the hard mask. In some embodiments, the hard mask comprises a carbon component in an amount of 10 wt% to 99 wt%, 20 wt% to 99 wt%, 30 wt% to 99 wt%, 40 wt% to 99 wt%, 50 wt% to 99 wt%, 60 wt% to 99 wt%, 65 wt% to 99 wt%, 70 wt% to 99 wt%, 75 wt% to 99 wt%, 80 wt% to 99 wt%, 85 wt% to 99 wt%, 90 wt% to 99 wt%, 95 wt% to 99 wt%, 1 wt% to 90 wt%, 1 wt% to 80 wt%, 1 wt% to 70 wt%, 1 wt% to 60 wt%, 1 wt% to 50 wt%, 1 wt% to 40 wt%, 1 wt% to 30 wt%, 1 wt% to 20 wt%, or 1 wt% to 10 wt%, based on the total weight of the hard mask. Composition 400 comprises one or more components for polishing the hard mask on the surface of substrate 300. In some embodiments, composition 400 comprises permanganate ions of a permanganate oxidant. In some embodiments, the permanganate oxidant comprises at least one of sodium permanganate, potassium permanganate, lithium permanganate, barium permanganate, hydrogen permanganate, or any combination thereof. In some embodiments, the permanganate ions comprise MnO -4 。 In some embodiments, composition 400 comprises at least one of ions of a metal-oxygen catalyst, ions of an acid catalyst, or any combination thereof. In some embodiments, the metal-oxygen catalyst comprises oxygen-nitrate, oxygen-chloride, oxygen-sulfate, oxygen-carbonate, C 2 -C 10 At least one of an oxygen-alkanoate, or any combination thereof. In some embodiments, the metal-oxygen catalyst comprises at least one of zirconyl nitrate, zirconium oxychloride, nickelyl nitrate, nickel hydroxide chloride, hafnyl nitrate, hafnium oxychloride, zirconium alkoxide or any combination thereof. In some embodiments, the ions of the metal-oxygen catalyst comprise ZrO + 、ZrO ++ 、NiO + 、ZrOH + 、HfO + 、HfOH + 、TiO + 、TiO ++ or at least one of any combination thereof. In some embodiments, the acid catalyst comprises at least one of aluminum nitrate, aluminum chloride, iron nitrate, iron chloride, copper nitrate, potassium chloride, magnesium chloride or any combination thereof. In some embodiments, the ions of the acid catalyst comprise Al 3+ 、Fe + 、Fe 2+ 、Fe 3+ or at least one of any combination thereof. In some embodiments, the composition comprises a permanganate oxidant in an amount of 0.2 wt% to 6 wt% or any range or sub-range therebetween, based on the total weight of the composition. In some embodiments, the composition comprises a permanganate oxidant in an amount of 0.2 wt% to 5.5 wt%, 0.2 wt% to 5 wt%, 0.2 wt% to 4.5 wt%, 0.2 wt% to 4 wt%, 0.2 wt% to 3.5 wt%, 0.2 wt% to 3 wt%, 0.2 wt% to 2.5 wt%, 0.2 wt% to 2 wt%, 0.2 wt% to 1.5 wt%, 0.2 wt% to 1 wt%, 0.2 wt% to 0.5 wt%, 0.5 wt% to 6 wt%, 1 wt% to 6 wt%, 1.5 wt% to 6 wt%, 2 wt% to 6 wt%, 2.5 wt% to 6 wt%, 3 wt% to 6 wt%, 3.5 wt% to 6 wt%, 4 wt% to 6 wt%, 4.5 wt% to 6 wt%, 5 wt% to 6 wt%, 5.5 wt% to 6 wt%, based on the total weight of the composition. In some embodiments, the composition comprises a catalyst in an amount of 0.01 wt% to 2 wt% or any range or sub-range therebetween, based on the total weight of the composition. In some embodiments, the composition comprises a catalyst in an amount of 0.1 wt% to 2 wt%, 0.2 wt% to 2 wt%, 0.3 wt% to 2 wt%, 0.4 wt% to 2 wt%, 0.5 wt% to 2 wt%, 0.6 wt% to 2 wt%, 0.7 wt% to 2 wt%, 0.8 wt% to 2 wt%, 0.9 wt% to 2 wt%, 1.1 wt% to 2 wt%, 1.2 wt% to 2 wt%, 1.3 wt% to 2 wt%, 1.4 wt% to 2 wt%, 1.5 wt% to 2 wt%, 1.6 wt% to 2 wt%, 1.7 wt% to 2 wt%, 1.8 wt% to 2 wt%, 1.9 wt% to 2 wt%, 0.01 wt% to 1.9 wt%, 0.01 wt% to 1.8 wt%, 0.01 wt% to 1.7 wt%, 0.01 wt% to 1.6 wt%, 0.01 wt% to 1.5 wt%, 0.01 wt% to 1.4 wt%, 0.01 wt% to 1.3 wt%, 0.01 wt% to 1.2 wt%, 0.01 wt% to 1.1 wt%, 0.01 wt% to 1 wt%, 0.01 wt% to 0.9 wt%, 0.01 wt% to 0.8 wt%, 0.01 wt% to 0.7 wt%, 0.01 wt% to 0.6 wt%, 0.01 wt% to 0.5 wt%, 0.01 wt% to 0.4 wt%, 0.01 wt% to 0.3 wt%, 0.01 wt% to 0.2 wt%, or 0.01 wt% to 0.1 wt%, based on the total weight of the composition. In some embodiments, the composition 400 comprises abrasive particles. In some embodiments, the abrasive particles comprise oxides, oxyhydroxides, or any combination thereof. In some embodiments, the abrasive particles comprise at least one of manganese oxide, zirconium oxide, silicon dioxide, aluminum oxide, α-aluminum oxide, aluminum oxide-cerium dioxide, cerium dioxide, or any combination thereof. In some embodiments, the abrasive particles comprise a coating that comprises at least one of manganese oxide, zirconium oxide, silicon dioxide, aluminum oxide, α-aluminum oxide, aluminum oxide-cerium dioxide, cerium dioxide, or any combination thereof. In some embodiments, the abrasive particles have a Mohs hardness of 2 to 9, 2 to 8, 2 to 7, 2 to 6, 2 to 5, 2 to 4, 2 to 3, 3 to 9, 4 to 9, 5 to 9, 6 to 9, 7 to 9, or 8 to 9. In some embodiments, the composition 400 comprises a pH adjuster. In some embodiments, the pH adjuster comprises at least one of an inorganic acid, a metal salt, an organic acid, an organic hydroxide, or any combination thereof. In some embodiments, the metal salt comprises at least one of a metal nitrate, a metal hydroxide, or any combination thereof. In some embodiments, the pH adjuster comprises H 2 SO 4 , HNO 3 , HF, H 3 PO 4 , HCl, Al(NO 3 ) 3 , Mn(NO 3 ) 2 , Zr(NO 3 ) 2 , Fe(NO 3 ) 3 , KOH, NaOH, Al(OH) 3 , CH 3 SO 3 H, polystyrenesulfonic acid (PSSA), toluenesulfonic acid, salicylic acid, oxalic acid, succinic acid, citric acid, malic acid, lactic acid, fumaric acid, NH 4 at least one of OH, choline hydroxide, or any combination thereof. In some embodiments, the composition 400 has a pH of 2 to 5. In some embodiments, the composition 400 has a pH of 2 to 4. In some embodiments, the composition 400 has a pH of 2 to 3. In some embodiments, the composition 400 has a pH of 3 to 5. In some embodiments, the composition 400 has a pH of 4 to 5. In some embodiments, the composition 400 does not contain hydrogen peroxide. The composition 500 is optional and may comprise one or more components of the composition 400. In some embodiments, the composition 500 is the same as or similar to the composition 400. In some embodiments, the composition 500 is different from the composition 400. In some embodiments, the composition 500 comprises any one or more of the components described above with respect to the composition 400. With respect to at least the composition 400 and the composition 500, the following U.S. patent applications are hereby incorporated by reference in their entireties for all purposes: U.S. Patent Application No. 17 / 232,947, filed April 16, 2021, and titled "CMP Compositions for Polishing Dielectric Materials" and U.S. Patent Application No. 17 / 163,372, filed January 30, 2021, and titled "CMP Compositions for Polishing Hard Materials". Some embodiments relate to compositions for polishing a hard mask. Such compositions for polishing a hard mask may comprise any of the compositions disclosed herein. In some embodiments, the composition comprises permanganate ions of a permanganate oxidant. In some embodiments, the composition removes at least a portion of the hard mask when contacted with the hard mask using a chemical mechanical planarization apparatus. In some embodiments, the hard mask comprises at least one of a non-carbon boron component, a boron-carbon component, a non-carbon silicon component, a non-carbon chromium component, a non-carbon zirconium component, or any combination thereof. Figure 2 is a flowchart of a method 600 for polishing a hard mask according to some embodiments. The method 600 for polishing a hard mask may include as presented in Figure One or more of the steps in 2. In some embodiments, method 600 includes step 602 of obtaining a substrate including a hard mask. In some embodiments, the hard mask includes at least one of a boron component, a silicon component, a chromium component, a zirconium component, or any combination thereof. In some embodiments, method 600 includes step 604 of obtaining a composition for polishing the hard mask. In some embodiments, the composition includes permanganate ions of a permanganate oxidant. In some embodiments, method 600 includes step 606 of using a chemical mechanical planarization apparatus to bring the composition and the hard mask into sufficient contact to remove at least a portion of the hard mask. It should be understood that any of the compositions, substrates, and CMP apparatuses disclosed herein may be employed without departing from the scope of the present invention. Example 1 Composition without abrasive particles Compositions were prepared using different catalysts and used for polishing a hard mask. For comparison purposes, a control composition without a catalyst was also prepared. None of these compositions contain any abrasive particles. The material removal rates of various compositions on a non-carbon wafer containing approximately 99% boron were measured using a CMP apparatus equipped with a CMP pad (IC1010 CMP polishing pad) available from Dupont and operating at a pressure of 21 kPa, a platen speed of 120 rpm, and a head speed of 60 rpm. For each composition, the oxidant, catalyst, and material removal rate (MRR) are summarized in Table 1 below. Table 1 Example 2 Composition with abrasive particles Compositions were prepared using different catalysts and different abrasive particles. The resulting compositions were used for polishing a hard mask. The material removal rates of various compositions on a non-carbon wafer containing approximately 97% boron were measured using a CMP apparatus equipped with a CMP pad (IC1010 CMP polishing pad) available from Dupont and operating at a pressure of 21 kPa, a platen speed of 120 rpm, and a head speed of 60 rpm. For each composition, the oxidant, oxidant concentration (weight percentage), abrasive type, abrasive concentration (weight percentage), catalyst, and material removal rate (MRR) are summarized in Table 2 below. All weight percentages are based on the total weight of each composition. Table 2 Example 3 Compositions with different oxidants Compositions are prepared using different oxidants and used for polishing a hard mask. The material removal rates of various compositions on a non-carbon wafer containing approximately 97% boron are measured using a CMP apparatus equipped with CMP pads (IC1010 CMP polishing pad and IK4250H CMP polishing pad) available from Dupont and operating at a pressure of 21 kPa, a platen speed of 120 rpm, and a head speed of 60 rpm. For each composition, the oxidant, oxidant concentration (weight percentage), abrasive type, abrasive concentration (weight percentage), catalyst, various material removal rates (MRR), and selectivities are summarized in Tables 3 and 4 below. All weight percentages are based on the total weight of each composition. Table 3 Table 4 Example 4 Compositions with Different pH Compositions with different pH are prepared and used for polishing a hard mask. The material removal rates of various compositions on a non-carbon wafer containing approximately 97% boron are measured using a CMP apparatus equipped with a CMP pad (IC1010 CMP polishing pad) available from Dupont and operating at a pressure of 21 kPa, a platen speed of 120 rpm, and a head speed of 60 rpm. For each composition, the oxidant, catalyst, operating pH, and material removal rate (MRR) are summarized in Table 5 below. Table 5 Example 5 Polishing at Different Pressures A composition is prepared that contains 0.8 wt% KMnO₄ based on the total weight of the composition 4 、0.1 wt% α-aluminum oxide abrasive particles based on the total weight of the composition, 0.5 wt% boehmite abrasive particles based on the total weight of the composition, and 0.2 wt% zirconyl nitrate based on the total weight of the composition. The composition is used for polishing a boron-amorphous silicon hard mask at different pressures. The material removal rates of the composition on the hard mask at different pressures are measured using a CMP apparatus equipped with a CMP pad (IC1010 CMP polishing pad) available from Dupont and operating at a pressure of 21 kPa, a platen speed of 120 rpm, and a head speed of 60 rpm. The material removal rates of boron-amorphous silicon hard masks with different boron contents at each pressure are summarized in Table 6 below. Table 6 Aspect Various aspects are described below. It should be understood that any one or more of the features recited in the following aspects can be combined with any one or more other aspects. Aspect 1. A system comprising: a composition comprising permanganate ions of a permanganate oxidant, a substrate comprising a hard mask, the hard mask comprising at least one of a non-carbon boron component, a boron-carbon component, a non-carbon silicon component, a non-carbon chromium component, a non-carbon zirconium component, or any combination thereof; and chemical mechanical planarization (CMP) equipment structurally designed to bring the composition into contact with the substrate to remove at least a portion of the hard mask of the substrate. Aspect 2. The system of Aspect 1, wherein the permanganate oxidant comprises at least one of sodium permanganate, potassium permanganate, lithium permanganate, barium permanganate, hydrogen permanganate, or any combination thereof. Aspect 3. The system of any one of Aspects 1 to 2, wherein the permanganate ions comprise MnO -4 . Aspect 4. The system of any one of Aspects 1 to 3, wherein the hard mask comprises boron and amorphous silicon. Aspect 5. The system of any one of Aspects 1 to 4, wherein the hard mask comprises chromium and chromium oxide. Aspect 6. The system of any one of Aspects 1 to 5, wherein the hard mask comprises polysilicon and doped polysilicon. Aspect 7. The system of any one of Aspects 1 to 6, wherein the hard mask comprises silicon dioxide. Aspect 8. The system of any one of Aspects 1 to 7, wherein the hard mask comprises zirconium oxide. Aspect 9. The system of any one of Aspects 1 to 8, wherein the composition further comprises at least one of ions of a metal-oxygen catalyst, ions of an acid catalyst, or any combination thereof. Aspect 10. The system of any one of Aspects 1 to 9, wherein the composition further comprises abrasive particles having a Mohs hardness of 2 to 9. Aspect 11. The system of any one of Aspects 1 to 10, wherein the composition further comprises a pH adjuster. Aspect 12. A method comprising: obtaining a substrate comprising a hard mask, the hard mask comprising at least one of a boron component, a silicon component, a chromium component, a zirconium component, or any combination thereof; obtaining a composition comprising permanganate ions of a permanganate oxidant; and using chemical mechanical planarization equipment to bring the composition into sufficient contact with the hard mask to remove at least a portion of the hard mask. Aspect 13. The method of Aspect 12, wherein the permanganate oxidant comprises at least one of sodium permanganate, potassium permanganate, lithium permanganate, barium permanganate, hydrogen permanganate, or any combination thereof. Aspect 14. The method of any one of Aspects 12 to 13, wherein the permanganate ions comprise MnO -4. Aspect 15. The method according to any one of Aspects 12 to 14, wherein the hard mask comprises boron and amorphous silicon. Aspect 16. The method according to any one of Aspects 12 to 15, wherein the hard mask comprises chromium and chromium oxide. Aspect 17. The method according to any one of Aspects 12 to 16, wherein the hard mask comprises polysilicon and doped polysilicon. Aspect 18. The method according to any one of Aspects 12 to 17, wherein the hard mask comprises silicon dioxide. Aspect 19. The method according to any one of Aspects 12 to 18, wherein the hard mask comprises zirconium oxide. Aspect 20. A composition comprising: permanganate ions of a permanganate oxidant, wherein the composition removes at least a portion of the hard mask when contacted with the hard mask using a chemical mechanical planarization apparatus, wherein the hard mask comprises at least one of a non-carbon boron component, a boron-carbon component, a non-carbon silicon component, a non-carbon chromium component, a non-carbon zirconium component, or any combination thereof. It should be understood that changes may be made in details, particularly in matters of the construction materials and the shape, size and arrangement of the parts employed, without departing from the scope of the invention. The present specification and the described embodiments are examples, the true scope and spirit of the invention being designated by the appended claims. 100: System 200: Chemical mechanical planarization apparatus 205: Polishing head 210: Carrier 215: Platen 220: Polishing pad 225: Inlet 230: Valve 235: Inlet 240: Valve 245: Process controller 250: Water supply 300: Substrate 400: Composition 500: Composition 600: Method 602: Step 604: Step 606: Step Some embodiments of the present invention are described herein by way of example only with reference to the accompanying drawings. Referring now to the details of the drawings, it is emphasized that the embodiments shown are by way of example and for purposes of illustrative discussion of the embodiments of the present invention. In this regard, the description taken in conjunction with the drawings enables those skilled in the art to understand how the embodiments of the present invention may be practiced. Figure 1 is a schematic diagram of a system for polishing a hard mask according to some embodiments. Figure 2 is a flowchart of a method for polishing a hard mask according to some embodiments. 100: System 200: Chemical mechanical planarization apparatus 205: Polishing head 210: Carrier 215: Platen 220: Polishing pad 225: Inlet 230: Valve 235: Inlet 240: Valve 245: Process controller 250: Water supply 300: Substrate 400: Composition 500: Composition

Claims

1. A system for polishing a hard mask, comprising: a composition containing permanganate ions of a permanganate oxidant; a substrate containing a hard mask, the hard mask comprising at least one of a non-boron carbon component, a non-silicon carbon component, a non-chromium carbon component, a non-zirconium carbon component, or any combination thereof; and a chemical mechanical planarization (CMP) apparatus, wherein the CMP apparatus is configured to contact the composition with the hard mask to remove at least a portion of the hard mask.

2. The system of claim 1, wherein the permanganate oxidant comprises at least one of sodium permanganate, potassium permanganate, lithium permanganate, barium permanganate, hydrogen permanganate, or any combination thereof.

3. The system of claim 1, wherein the permanganate ion comprises MnO-4.

4. The system of claim 1, wherein the hard mask comprises boron and amorphous silicon.

5. The system of claim 1, wherein the hard mask comprises chromium and chromium oxide.

6. The system of claim 1, wherein the hard mask comprises polysilicon and doped polysilicon.

7. The system of claim 1, wherein the hard mask comprises silicon dioxide.

8. The system of claim 1, wherein the hard mask comprises zirconium oxide.

9. The system of claim 1, wherein the composition further comprises at least one of metal-oxygen catalyst ions, acid catalyst ions, or any combination thereof.

10. The system of claim 1, wherein the composition further comprises abrasive particles having a Mohs hardness of 2 to 9.

11. The system of claim 1, wherein the composition further comprises a pH adjuster.

12. A method for grinding a hard mask, comprising: Obtain a substrate comprising a hard mask, the hard mask comprising at least one of a non-carbon boron component, a non-carbon silicon component, a non-carbon chromium component, a non-carbon zirconium component, or any combination thereof; obtain a composition comprising permanganate ions containing a permanganate oxidant; and use a chemical mechanical planarization apparatus to contact the composition with the hard mask to remove at least a portion of the hard mask.

13. The method of claim 12, wherein the permanganate oxidant comprises at least one of sodium permanganate, potassium permanganate, lithium permanganate, barium permanganate, hydrogen permanganate, or any combination thereof.

14. The method of claim 12, wherein the permanganate ion comprises MnO-4.

15. The method of claim 12, wherein the hard mask comprises boron and amorphous silicon.

16. The method of claim 12, wherein the hard mask comprises chromium and chromium oxide.

17. The method of claim 12, wherein the hard mask comprises polysilicon and doped polysilicon.

18. The method of claim 12, wherein the hard mask comprises silicon dioxide.

19. The method of claim 12, wherein the hard mask comprises zirconium oxide.

Images