Semiconductor device processing apparatus and semiconductor device testing apparatus

Abstract

The purpose of this invention is to provide a semiconductor device processing apparatus that improves the sealing of the suction hole between the heater section and the heat exchange section, while also enhancing the thermal conductivity between the heater section and the heat exchange section. The solution is a processor 30 that moves a device under test (DUT) 100 to a probe card 20, including a thermal clamp 40 that moves while holding the DUT 100. The thermal clamp 40 includes: a heater section 41 having a holding surface 41a and a lower surface 41c that contact the DUT 100; a sheet-like heat-conducting member 42 that contacts the lower surface 41c; a heat exchange section 43 having a coolant flow channel 432 through which coolant passes and an upper surface 431a that contacts the heat-conducting member 42 and exchanges heat with the heater section 41 via the heat-conducting member 42; and a suction hole 46 penetrating the heat exchange section 43, the heat-conducting member 42, and the heater section 41.

Description

Semiconductor device processing equipment and semiconductor device testing equipment The present invention relates to a semiconductor device processing device and a semiconductor device testing device for an electronic component under test (hereinafter referred to as a "device under test" (DUT)) such as a semiconductor integrated circuit element. A handling system for transporting a DUT includes a temperature control device having a DUT heat exchanger (e.g., see Patent Document 1). The DUT heat exchanger contacts the DUT and performs heat exchange, and includes a thermal block having a flow channel through which a fluid can flow. In the flow channel of this heat block, a first fluid, serving as a warming medium, mixes with a second fluid, serving as a cooling medium, and this mixed fluid is used to adjust the temperature of the device under test. The temperature of the mixed fluid is adjusted by controlling the mixing ratio of the first and second fluids using a valve. [Prior Art Literature] [Patent Literature] [Patent Document 1] U.S. Patent Application Publication No. 2019 / 0302178 [Problem to be Solved by the Invention] In the aforementioned prior art, when the fluid flow rate is changed by opening and closing a valve, vibration is generated, which may cause instability in the fine positioning accuracy of the heat exchanger of the device under test. As a temperature adjustment device that does not mix two fluids as in this prior art, a device including a heater and a heat exchanger that exchanges heat with the heater is considered. However, in such temperature control devices, when suction holes are provided for sucking the DUT, a seal must be established between the heater and the heat exchanger. For example, using a standard rubber sealant (O-ring) can reduce thermal conductivity between the heater and the heat exchanger. The problem to be solved by the present invention is to provide a semiconductor device processing device and a semiconductor device testing device, which can improve the sealing performance of the suction hole between the heater part and the heat exchange part, and at the same time improve the thermal conductivity between the heater part and the heat exchange part. [Means for solving the problem] [1] Aspect 1 of the present invention is a semiconductor element processing device for moving a component to be tested to a contact portion, wherein the semiconductor element processing device includes a holding unit for holding the component to be tested while moving the component to be tested, and the holding unit includes: a heater portion having a first surface in contact with the component to be tested and a second surface opposite to the first surface; a sheet-like heat-conducting member in contact with the second surface; a heat exchange portion having a flow channel for a fluid to pass through and a third surface in contact with the heat-conducting member, and exchanging heat with the heater portion via the heat-conducting member; and a suction hole passing through the heat exchange portion, the heat-conducting member and the heater portion. [2] Aspect 2 of the present invention may also be a semiconductor element processing device according to aspect 1, wherein the attraction hole includes: a first through hole formed in the heater portion; a second through hole formed in the heat-conducting member and connected to the first through hole; and a third through hole formed in the heat exchange portion and connected to the second through hole. [3] Aspect 3 of the present invention may also be a semiconductor element processing device according to aspect 1 or 2, wherein the holding unit further includes an intermediate member located between the heater portion and the heat exchange portion and having a thickness substantially the same as that of the heat-conducting member. [4] Aspect 4 of the present invention may also be a semiconductor device processing device according to aspect 3, wherein the heat-conducting member has a fourth through hole extending through the heat-conducting member, and the intermediate member is disposed in the fourth through hole. [5] Aspect 5 of the present invention may also be a semiconductor element processing device of aspect 3 or 4, wherein the holding unit includes a plurality of the intermediate components; the plurality of intermediate components are concentric with the center of the second surface in a top view and are arranged at equal intervals in the circumferential direction of the semiconductor element processing device. [6] Aspect 6 of the present invention may also be a semiconductor device processing device according to any one of aspects 3 to 5, wherein the rigidity of the intermediate member is higher than the rigidity of the heat-conducting member. [7] Aspect 7 of the present invention may also be a semiconductor device processing device according to any one of aspects 3 to 6, wherein the intermediate member and the heat exchange portion are integrally formed. [8] Aspect 7 of the present invention may also be a semiconductor element processing device according to any one of aspects 3 to 7, wherein the holding unit includes: a frame member that contacts and presses the outer periphery of the heater portion; and a fixing member that fixes the frame member to the semiconductor element processing device of the heat exchange portion. [9] Aspect 9 of the present invention may also be a semiconductor element processing device of aspect 8, wherein the frame member is separated from the heater portion in the planar direction of the heater portion and is in contact with the peripheral portion in a direction perpendicular to the planar direction, and a first gap is formed between the heater portion and the frame member in the planar direction.

[10] Aspect 10 of the present invention may also be a semiconductor element processing device of aspect 8 or 9, wherein a second gap is formed between the heat exchange portion and the frame member in a direction perpendicular to the planar direction of the heater portion.

[11] Aspect 11 of the present invention may also be a semiconductor device processing device according to any one of aspects 8 to 10, wherein the first surface protrudes relative to the frame member.

[12] Aspect 12 of the present invention may also be a semiconductor element processing device according to aspect 11, wherein the heater portion includes: a first portion having the first surface; and a second portion disposed around the first portion, wherein the height of the second portion is lower than that of the first portion, and the frame member presses the second portion toward the heat exchange portion.

[13] Aspect 13 of the present invention may also be that in a semiconductor element processing device of any one of aspects 1 to 12, the heater portion has a rectangular planar shape, the heater portion includes a plurality of fifth through holes located on the diagonals of the four corners of the heater portion, the retaining unit further includes a plurality of pins passing through the fifth through holes, and a third gap is formed between the inner wall of the fifth through hole and the pins in the diagonal direction of the heater portion, whereby the heater portion can be retractably retained in the semiconductor element processing device of the heat exchange portion in the diagonal direction.

[14] Aspect 14 of the present invention may also be that, in the semiconductor device processing device of aspect 13, the plurality of pins are erected on the third surface of the semiconductor device processing device in a manner surrounding the heat-conducting member.

[15] Aspect 15 of the present invention may also be a semiconductor element processing device according to any one of aspects 1 to 14, wherein the heater portion has a rectangular planar shape, the attraction hole includes a plurality of first through holes arranged on the first surface, and the plurality of first through holes are arranged on a diagonal line of the first surface.

[16] Aspect 15 of the present invention is a semiconductor device testing device for testing a device under test, comprising: the aforementioned contact portion; a tester electrically connected to the aforementioned contact portion; and a semiconductor device processing device as described in any one of aspects 1 to 15. [Effects of the Invention] According to the present invention, the holding unit includes a heater portion, a sheet-shaped heat-conducting member in contact with the second surface of the heater portion, a heat exchange portion for exchanging heat with the heater portion via the heat-conducting member, and a suction hole extending through the heat exchange portion, the heat-conducting member, and the heater portion. The heat-conducting member improves the sealing of the suction hole between the heater portion and the heat exchange portion, while also enhancing thermal conductivity between the heater portion and the heat exchange portion. [Embodiments for Implementing the Invention] Hereinafter, embodiments of the present invention will be described based on the drawings. FIG1 is a schematic diagram of the overall structure of the semiconductor device testing apparatus 1 and the internal structure of the processor 30 in an embodiment of the present invention. FIG2 is a cross-sectional view showing the hot chuck 40 in an embodiment of the present invention and a block diagram showing the control system. FIG3 is an enlarged cross-sectional view showing the hot chuck 40 in an embodiment of the present invention. FIG4 is a top view showing the hot chuck 40 in an embodiment of the present invention, and FIG5 is a top view showing the state in which the frame member 44 and the heater portion 41 are removed from the hot chuck 40 in FIG4. In addition, for easy understanding, in FIG2, although the device under test 100 is separated from the hot chuck 40, in fact, because the device under test 100 is retained in the hot chuck 40, the device under test 100 is in contact with the hot chuck 40. In addition, FIG2 is also a cross-sectional view along the II-II line segment in FIG4. The semiconductor device testing apparatus 1 in this embodiment is used to test the electrical characteristics of a device under test 100. While not particularly limited, the device under test 100 in this embodiment may be a die formed by dicing a semiconductor wafer. Alternatively, the device under test 100 may be a device in which the die is encapsulated with a resin material. As shown in FIG1 , the semiconductor device testing apparatus 1 includes a tester 10, a probe card 20, and a processor 30. The processor 30 is an example of a "semiconductor device processing apparatus" in the embodiment of the present invention. As shown in Figure 1, the tester 10 includes a test head 11 and a main unit (tester body) 12. The test head 11 is connected to the main unit 12 via a cable. A probe card 20 is electrically connected to the test head 11. The probe card 20 enters the interior of the processor 30 through an opening 32 formed in a base 31 above the processor 30. The probe card 20 includes a circuit board 21 and a probe head 22 mounted on the circuit board 21. As shown in FIG2 , the probe head 22 includes a plurality of probes 23 and a housing 24. The probe card 20 is an example of a "contact portion" in the present invention. Probes 23 are electrical probes that contact terminals 111 of the device under test 100. A plurality of probes 23 are arranged to correspond to the plurality of terminals 111 of the device under test 100. Although not particularly limited, specific examples of probes 23 include single-pin spring connectors (pogo pins), vertical probes, cantilever probes, anisotropic conductive rubber sheets, bumps provided on a membrane, or contactors manufactured using MEMS technology. The probe 23 is held in a housing 24, which is fixed to the circuit board 21 by screws or the like. The probe head 22 is mounted on the circuit board 21. Alternatively, the circuit board 21 may directly hold the probe 23, in which case the housing 24 may be omitted. 1 and 2 , the processor 30 includes a thermal chuck 40, a first moving device 60, and a control device 70. The thermal chuck 40 is equivalent to an example of a "holding unit" in the present invention. The thermal chuck 40 holds the DUT 100 by suction and adjusts the temperature of the DUT 100. As shown in Figures 2 and 3, the thermal chuck 40 includes a heater 41, a heat-conducting member 42, a heat exchanger 43, a frame 44, a fixing member 45, suction holes 46, and a temperature sensor 49. As shown in Figure 2, heater unit 41 is in direct contact with device under test 100 and directly heats device under test 100. Examples of heater unit 41 include ceramic heaters such as aluminum nitride heaters, silicon nitride heaters, and PTC heaters, as well as polyimide heaters, cartridge heaters, and thermoelectric (Peltier) elements. Heater unit 41 is connected to control device 70 via terminals (not shown) and generates heat using power supplied from control device 70. As shown in FIG3 , the heater section 41 includes a first portion 411 and a second portion 412 . The first portion 411 includes a holding surface 41 a for holding the device under test 100 . As shown in FIG4 , the holding surface 41 a in this embodiment has a generally rectangular planar shape. As shown in FIG3 , this holding surface 41 a protrudes toward the +Z direction relative to the frame member 44 . Therefore, the device under test 100 placed on the holding surface 41 a does not interfere with the frame member 44 . The device under test 100 is heated via this holding surface 41 a . Furthermore, this holding surface 41 a represents an example of the "first surface" in this aspect of the present invention, and the second portion 412 represents an example of the "peripheral portion" in this aspect of the present invention. As shown in Figures 3 and 4, the first portion 411 includes a plurality of first through holes 413 that extend through the first portion 411 and open on the holding surface 41a. As shown in Figure 2, the first through holes 413 are formed at a position opposite to the device under test 100 and constitute a portion of the suction hole 46 described below. As shown in Figure 4, in this embodiment, the plurality of first through holes 413 are formed on a pair of diagonal lines DL of the holding surface 41a of the heater portion 41. 1. DL 2 up. As shown in Figures 3 and 4, the second portion 412 is disposed around the first portion 411. The second portion 412 is integrally formed with the first portion 411 and has a rectangular frame shape. This second portion 412 is pressed by the frame member 44, described below. The frame member 44 presses the second portion 412, thereby pressing the heater portion 41 toward the heat transfer member 42 and the heat exchange portion 43 (in the -Z direction in the figure). As shown in FIG. 3 , the height H of the second portion 412 is 2 than the height H of the first portion 411 1 smaller (height H 2>Height H 1). Therefore, the heater portion 41 has a convex shape in which the first portion 411 protrudes relative to the second portion 412. By bringing the frame member 44 into contact with the second portion 412, the holding surface 41a can protrude to the +Z direction side relative to the frame member 44. 1. H 2 is the height from the upper surface of the heat conducting member 42 . The second portion 412 includes a plurality of pin holes 414. The plurality of pin holes 414 in this embodiment are formed at the four corners of the second portion 412 of the heater portion 41 and are formed on the diagonal line DL. 1. DL 2. In addition, the pin hole 414 is equivalent to an example of the "fifth through hole" in the embodiment of the present invention. The plurality of pin holes 414 are through holes through which the pins 435 described below pass, and have a diagonal line DL 1.DL 2 in the direction of extension. In this article, the so-called oblong shape means a shape formed by a pair of straight lines extending parallel to each other and a pair of arc parts connected to the straight lines. In addition, the planar shape of the pin hole 414 is not particularly limited to the above shape, and may also be an ellipse or a rectangle. In addition, in the diagonal direction (diagonal DL 1. DL 2), a third gap 436 is formed between the inner wall 414a of the pin hole 414 and the pin 435. Thus, the heater portion 41 is held in the heat exchange portion 43 so as to be telescopic in the diagonal direction. The expansion and contraction of the heater portion 41 in the diagonal direction occurs, for example, when the temperature of the heater portion 41 increases and decreases, due to the expansion and contraction of the heater portion 41. Therefore, the deformation of the heater portion 41 due to thermal expansion can be released in the diagonal direction by the pin hole 414 as described above, so that the expansion and contraction center of the heater portion 41 can be set as the center C of the heater portion. 1. Therefore, positional deviation of the device under test 100 held on the holding surface 41a of the heater portion 41 can be suppressed. As shown in FIG3 , the sheet-like heat-conducting member 42 contacts the lower surface 41c of the heater portion 41, opposite the retaining surface 41a, and is located between the heater portion 41 and the heat exchange portion 43. As shown in FIG5 , the heat-conducting member 42 in this embodiment is not particularly limited but can have a generally rectangular planar shape. Furthermore, the lower surface 41c is an example of the "second surface" in this aspect of the present invention. The heat conducting member 42 is made of a material with high thermal conductivity and is closely attached to the lower surface 41c of the heater portion 41 and the upper surface 431a of the heat exchange portion 43, thereby enabling more efficient heat exchange between the heater portion 41 and the heat exchange portion 43. Thermal interface material (TIM) can be used as heat conducting member 42, for example. Examples of TIM include metal foil composed of aluminum or copper, graphite sheets, silicone rubber sheets containing dispersed thermally conductive fillers, sheets containing carbon nanotubes (CNTs), and gels containing dispersed thermally conductive fillers. As shown in Figures 3 and 5 , the heat conducting member 42 includes a plurality of second through holes 423 and a plurality of intermediate holes 424. The intermediate holes 424 are equivalent to an example of the "fourth through holes" of the present invention. As shown in FIG3 , the second through hole 423 penetrates the heat conducting member 42. The second through hole 423 is provided at a position opposite to the first through hole 413. In this embodiment, the second through hole 423 is formed on the diagonal line DL 3. DL 4. In addition, the second through hole 423 is opposite to the first through hole 413 and communicates with the first through hole 413. The second through hole 423 also constitutes a part of the suction hole 46 similarly to the first through hole 413. As shown in FIG3, the middle hole 424 passes through the heat conducting member 42. Inside the middle hole 424, an intermediate member 434 described below is provided. As shown in FIG5, the middle hole 424 in this embodiment is formed at the center C of the heat conducting member 42. 2 are arranged at equal intervals in the circumferential direction of the imaginary circle VC. 2 is the diagonal line DL of the heat conducting component 3. DL The intersection of 4. As shown in FIG3 , the heat exchange portion 43 is in contact with the heater portion 41 and the heat conducting member 42. The heat exchange portion 43 exchanges heat with the heater portion 41 via the heat conducting member 42. The heat exchange portion 43 includes a main body 431 , a plurality of intermediate members 434 , and a plurality of pins 435 (see FIG4 ). As shown in Figures 3 and 5, the main body 431 has a refrigerant flow channel 432 and a plurality of third through holes 433. The refrigerant flow channel 432 is formed at a position inside the main body 431 corresponding to the heat-conducting member 42. As shown in Figure 2, a refrigerant supply device 51 is connected to this refrigerant flow channel 432, and a refrigerant with a temperature lower than normal temperature is supplied to the refrigerant flow channel 432 from the refrigerant supply device 51. This refrigerant passes through the refrigerant flow channel 432, thereby cooling the heater part 41 via the heat-conducting member 42. As the refrigerant flowing through this refrigerant flow channel 432, a liquid or a gas can be used. Although not particularly limited, as a specific example of a liquid refrigerant, for example, water or a fluorine-based inert liquid can be exemplified. On the other hand, as a specific example of a gas refrigerant, for example, air or nitrogen can be exemplified. Furthermore, the refrigerant flow channel 432 is equivalent to an example of a “flow channel” in the aspect of the present invention, and the refrigerant is equivalent to an example of a “fluid” in the aspect of the present invention. As shown in Figures 3 and 5 , a plurality of third through-holes 433 extend through the main body 431. These third through-holes 433 are located opposite the second through-holes 423. Furthermore, these third through-holes 433 are opposite the second through-holes 423 and communicate with the second through-holes 423. Similar to the first through-holes 413 and the second through-holes 423, these third through-holes 433 also constitute a portion of the suction hole 46. As shown in Figures 3 and 5 , a plurality of intermediate members 434 stand upright on the upper surface 431a of the main body 431. These intermediate members 434 prevent unnecessary deformation of the heat conductive member 42 in the Z direction when the heat conductive member 42 is pressed against the heater portion 41. This prevents loss of focus from the terminals 111 of the device under test 100 when photographing with the camera 82 (see Figure 1 ), described below. Furthermore, the upper surface 431a serves as an example of the "third surface" in this aspect of the present invention. The intermediate member 434 is located between the heater portion 41 and the main body portion 431 of the heat exchange portion 43. In addition, the rigidity of this intermediate member 434 is higher than that of the heat-conducting member 42. In other words, the material constituting the heat-conducting member 42 has a Young's modulus smaller than the Young's modulus of the material constituting the intermediate member 434. The intermediate member 434 in this embodiment is formed integrally with the main body portion 431 of the heat exchange portion 43, and is arranged to be located inside the intermediate hole 424 in the upper surface 431a of the main body portion 431. In addition, the intermediate member 434 may also be another member independent of the heat exchange portion 43. As shown in FIG. 3 , the thickness T of the intermediate member 434 is 2 is formed to have the same thickness T as the thermal conductive member 42 1 is approximately the same (thickness T 2=Thickness T 1). Therefore, as shown in FIG. 5 , similarly to the middle hole 424 , in a top view, a hole C is formed at the center of the heat conducting member 42 . 2 are arranged at equal intervals in the circumferential direction of the imaginary circle VC on the concentric imaginary circle VC. This can suppress deformation of the entire heat transfer member 42. A plurality of pins 435 are erected on the upper surface 431a in a manner surrounding the heat conducting member 42. The pins 435 are, as described above, arranged in a diagonal direction (diagonal DL 1. DL 2 ), the heater portion 41 is separated from the inner wall 414 a of the pin hole 414 via the third gap 436, whereby the heater portion 41 is held in the heat exchange portion 43 so as to be telescopic in the diagonal direction. As shown in Figures 3 and 5 , a frame member 44 is provided on the outer periphery of the thermal chuck 40. The frame member 44 has a frame-like planar shape and an L-shaped cross-sectional shape. The frame member 44 contacts the second portion 412 in a direction perpendicular to the planar direction of the heater unit 41 (the XY directions in the figure), thereby pressing the second portion 412. By pressing the second portion 412 of the heater unit 41 with the frame member 44, the entire circumference of the heater unit 41 is pressed, thereby evenly pressing the entire heat transfer member 42. This improves the fit between the heater unit 41 and the heat transfer member 42, as well as the fit between the heat exchange unit 43 and the heat transfer member 42. This improves the heat exchange efficiency between the heater unit 41 and the heat exchange unit 43. This frame member 44 is separated from the first portion 411 of the heater unit 41 in the planar direction of the heater unit 41. This creates a first gap 47 between the first portion 411 and the frame member 44 in the planar direction of the heater unit 41. Since deformation of the heater unit 41 in the planar direction during expansion is released into this first gap 47, the interference between the heater unit 41 and the frame member 44 suppresses deformation of the heater unit 41, such as warping. Similarly, the first gap 47 is formed between the second portion 412 and the frame member 44. Therefore, since deformation of the heater unit 41 during expansion is released into the first gap, deformation of the heater unit 41, such as warping, is suppressed. Furthermore, the frame member 44 is separated from the heat exchange portion 43 in the Z direction. Consequently, a second gap 48 is formed in the Z direction between the heat exchange portion 43 and the frame member 44. This second gap 48 suppresses heat exchange between the frame member 44 and the heat exchange portion 43, thereby improving the heat exchange efficiency between the heater portion 41 and the heat exchange portion 43. Fixing members 45 are located at the four corners of frame member 44 in a plan view. These fixing members 45 secure frame member 44 to heat exchange unit 43. Fasteners such as screws can be used as fixing members 45. While not particularly limited, adjusting the shaft diameter and tightening torque of these fasteners can adjust the pressure on heater unit 41 and the length of second gap 48. Suction hole 46 penetrates heat exchange portion 43, heat conducting member 42, and heater portion 41. Suction hole 46 is formed by the aforementioned first through hole 413, second through hole 423, and third through hole 433. Suction hole 46 is connected to a pressure reducing device 52. When device under test 100 is placed on holding surface 41a of heater portion 41, suction is applied to suction hole 46 by pressure reducing device 52, thereby holding device under test 100 in heater portion 41 by adsorption. A specific example of pressure reducing device 52 is a vacuum pump. Although not particularly limited, the temperature sensor 49 is embedded in the heater unit 41. The temperature sensor 49 is disposed within the heater unit 41 so as to be located near the holding surface 41a. The temperature sensor 49 detects the temperature of the device under test 100 via the holding surface 41a. The temperature sensor 49 is connected to the control device 70 so that its detection results can be output. As shown in FIG1 , the first moving device 60 is a device for moving the thermal chuck 40. This first moving device 60 includes a support member 61 and a moving mechanism 62 for moving the support member 61. Using this first moving device 60, the device under test 100 is aligned relative to the probe card 20 so that the plurality of terminals 111 of the device under test 100 face the plurality of probes 23 of the probe head 22. The thermal chuck 40 is supported by a flat support member 61. This support member 61 is supported by a moving mechanism 62. The moving mechanism 62 is capable of moving the support member 61 in the X, Y, and Z axes in the figure and rotating it about the Z axis (θz). This moving mechanism 62 includes an X-drive unit including an X-direction rail 63, a Y-drive unit including a Y-direction rail 64, and a Z-drive unit 65. As shown in FIG1 , the X-direction rail 63 is provided on the lower base 34 of the processor 30 and extends in the X-direction. The Y-direction rail 64 is slidably held on the X-direction rail 63 and is formed to be movable along the X-direction. The Z-drive unit 65 is slidably held on the Y-direction rail 64 and is formed to be movable along the Y-direction. The above-mentioned support member 61 is mounted on the Z-drive unit 65. The Z-drive unit 65 raises and lowers the support member 61 and is also capable of rotating the support member 61 around the Z-axis. As a result, the hot chuck 40 supported on the support member 61 is formed to be movable in the XYZ directions and to be rotatable around the Z-axis by the moving mechanism 62. Although not particularly limited, the X-drive unit, Y-drive unit, and Z-drive unit 65 of the moving mechanism 62 may include, for example, an actuator, a transmission mechanism, and a guide mechanism. Although not particularly limited, specific examples of the actuator include a motor such as an electric motor or an electric actuator including such an electric motor; specific examples of the transmission mechanism include a ball screw mechanism; and the guide mechanism includes a linear guide mechanism including a guide rail and a block slidable on the guide rail. The control device 70 shown in Figure 2 is implemented, for example, by a computer. Although not specifically shown, this computer is an electronic computer that includes a CPU (processor), main memory (RAM, etc.), auxiliary memory (hard drive or SSD, etc.), and an interface. The control system described below, for example, implements functions by executing programs in this control device 70. Furthermore, this control device 70 can also be implemented using a circuit board rather than a computer. The control device 70 is electrically connected to the heater unit 41, the temperature sensor 49, and the refrigerant supply device 51. The control device 70 controls the heater unit 41 and the refrigerant supply device 51 based on the detection results of the temperature sensor 49, thereby adjusting the temperature of the device under test 100 via the heater unit 41. Although not particularly limited, as an example of a control method, the flow rate of the refrigerant supplied by the refrigerant supply device 51 may be controlled to be constant, and the output of the heater unit 41 may be adjusted based on the detection results of the temperature sensor 49. Furthermore, the control device 70 may control the heater 41 and the coolant supply device 51 based on the output of the temperature detection circuit included in the device under test 100, rather than based on the temperature sensor 49. Although not particularly limited, a specific example of such a temperature detection circuit may include a circuit including a thermal diode included in the device under test 100. Furthermore, the control device 70 is electrically connected to the pressure reducing device 52. The control device 70 controls the pressure reducing device 52, causing the thermal chuck 40 to absorb and hold the device under test 100 or release the device under test 100. Furthermore, the control device 70 is connected to the first moving device 60 to output a control signal, thereby controlling the movement of the first moving device 60. Hereinafter, a method of advancing the DUT 100 toward the probe card 20 by the above-mentioned handler 30 will be described with reference to FIG. 1 . First, as indicated by the single-dot chain line in FIG. 1 , the first moving device 60 moves the thermal chuck 40 so that it is positioned below the opening 33 of the upper base 31 of the handler 30 . In this state, the transport device 81 included in the handler 30 removes the DUT 100 before testing from the tray or plate and transports it to the thermal chuck 40 through the opening 33 . Furthermore, as a specific example of the transport device 81, although not particularly limited, a pick-and-place device including an adsorption pad can be exemplified. Furthermore, as a specific example of the aforementioned tray, although not particularly limited, a customized tray compliant with the JEDEC (Joint Electron Device Engineering Council) standard can be exemplified. Furthermore, as the aforementioned tray, a buffer tray capable of holding the DUT 100 can be exemplified. Furthermore, if the DUT 100 is a single die, the DUT 100 prior to testing is also held on a ring frame (wafer ring) rather than on the aforementioned tray or tray. After the transport device 81 places the DUT 100 on the holding surface 41a, the control device 70 activates the pressure reducing device 52, causing the thermal chuck 40 to suction and hold the DUT 100. Furthermore, after the DUT 100 is placed on the holding surface 41a, the control device 70 begins controlling the heater unit 41 and the coolant supply device 51 to adjust the temperature of the DUT 100. Next, as indicated by the two-dot chain line in FIG. 1 , the first moving device 60 moves the thermal chuck 40 so that the camera 82, held on the upper base 31 of the processor 30, faces the device under test 100. The camera 82 then images the device under test 100 held on the thermal chuck 40. Furthermore, the camera 83, mounted on the support member 61 of the first moving device 60, preliminarily images the probe head 22 of the probe card 20. Based on the images captured by the cameras 82 and 83, the image processing function of the control device 70 identifies the relative positional relationship between the terminals 111 of the device under test 100 and the probes 23 of the probe card 20. The camera 83 may capture the probe card 20, for example, when the probe card is replaced to accommodate the type of device under test 100. 1 , the first moving device 60 moves the thermal chuck 40 so that the probe head 22 of the probe card 20 faces the DUT 100. During this movement, the camera 83 can also capture images of the probe head 22 of the probe card 20. Next, based on the relative positional relationship between the terminals 111 of the device under test 100 and the probes 23 of the probe card 20 identified by the cameras 82 and 83, the first moving device 60 fine-tunes the position of the thermal chuck 40. This positions the terminals 111 of the device under test 100 so that they face the probes 23 of the probe head 22, and the device under test 100 is positioned relative to the probe card 20. Next, the first moving device 60 raises the thermal chuck 40 and pushes the DUT 100 toward the probe card 20 for electrical connection. In this state, the terminals 111 of the DUT 100 are in contact with the probes 23 of the probe card 20 . Next, the tester 10 inputs an electrical signal to the device under test 100 through the probes 23 and the terminals 111 . Then, the tester 10 determines the quality or characteristics of the device under test 100 based on the electrical signal output from the device under test 100 through the terminals 111 . As described above, in the semiconductor device testing apparatus 1 of this embodiment, the heater section 41 and the heat exchange section 43 exchange heat via the heat conductive member 42. On the other hand, if the heater section and the heat exchange section are in direct contact without a heat conductive member, a small gap is likely to form between the lower surface of the heater section and the upper surface of the heat exchange section. Air with low thermal conductivity enters this gap, reducing the heat exchange efficiency between the heater section and the heat exchange section. In contrast, the sheet-like heat conductive member 42 deforms to conform to the shape of the lower surface 41c of the heater section 41 and the shape of the upper surface 431a of the heat exchange section 43, thereby conforming to these lower and upper surfaces 41c and 431a. Consequently, the heat exchange efficiency between the heater section 41 and the heat exchange section 43 is improved compared to a case where the heater section and the heat exchange section are in direct contact without a heat conductive member. Furthermore, the semiconductor device testing apparatus 1 of this embodiment is provided with a suction hole 46 extending through the heat exchange portion 43, the heat conductive member 42, and the heater portion 41. In this case, the sheet-like heat conductive member 42, as described above, is in close contact with the lower surface 41c of the heater portion 41 and the upper surface 431a of the heat exchange portion 43. Therefore, the heat conductive member 42 improves heat exchange efficiency and enhances the airtightness of the suction hole 46. Furthermore, even if the heater portion 41 and the heat exchange portion 43 expand or contract due to temperature changes and deform, the heat conductive member 42 located between them can follow this deformation, thereby improving both heat exchange efficiency and airtightness. Furthermore, the embodiments described above are provided for easy understanding of the present invention and are not intended to limit the present invention. Therefore, the elements disclosed in the embodiments described above are intended to include all design changes and equivalents within the technical scope of the present invention. For example, the device under test 100 may also be a semiconductor wafer. In this case, the thermal chuck 40 described above may be used as a wafer chuck. 1: Semiconductor device tester 10: Tester 11: Test head 12: Main unit 20: Probe card 21: Circuit board 22: Probe head 23: Probe 24: Housing 30: Processor 31: Upper base 32: Opening 33: Opening 34: Lower base 40: Thermal chuck 41: Heater 41a: Holding surface 41b: Peripheral surface 41c: Lower surface 42: Heat conducting member 43: Heat exchanger 44: Frame member 45: Fixing member 46: Suction hole 47: First gap 48: Second gap 49: Temperature sensor 51: Refrigerant supply device 52: Decompression device 60: First moving device 61: Support Holding member 62: Moving mechanism 63: X-direction rail 64: Y-direction rail 65: Z-drive unit 70: Control device 81: Transport device 82: Camera 83: Camera 100: DUT 101: Top 102: Bottom 111: Terminal 200: Semiconductor package 300: Wafer 411: First portion 412: Second portion 413: First through-hole 414: Pin hole 414a: Inner wall 423: Second through-hole 424: Intermediate hole 431: Main body 431a: Top surface 432: Coolant flow path 433: Third through-hole 434: Intermediate member 435: Pin 436: Third gap C 1: Center C 2: Center DL 1: Diagonal DL 2: Diagonal DL 3: Diagonal DL 4: Diagonal H 1: Height H 2: Height T 1:Thickness T 2: Thickness VC: imaginary circle FIG1 is a schematic diagram illustrating the overall structure of a semiconductor device testing apparatus and the internal structure of a processor according to an embodiment of the present invention. FIG2 is a cross-sectional view of a thermal chuck according to an embodiment of the present invention and a block diagram of a control system. FIG3 is an enlarged cross-sectional view of the thermal chuck according to an embodiment of the present invention. FIG4 is a top view of the thermal chuck according to an embodiment of the present invention. FIG5 is a top view of the thermal chuck of FIG4 with the heater unit and frame member removed. 10: Tester 20:Probe card 21: Circuit Board 22: Probe head 23: Probe 24: Shell 40: Hot chuck 41: Heater 42: Heat conducting component 43: Heat exchange unit 44:Frame components 45:Fixed components 46: Suction hole 49: Temperature sensor 51: Refrigerant supply device 52: Pressure reducing device 60: First mobile device 61: Support components 70: Control device 100: Component under test 111:Terminal 413: First through hole 431: Ontology Department 432: Refrigerant flow channel 434:Intermediate Component

Claims

1. A semiconductor device processing apparatus for moving a device under test (DUT) to a contact portion, the semiconductor device processing apparatus including a holding unit for holding the DUT while moving it; wherein the holding unit includes: The heater section has a first surface that contacts the element under test and a second surface opposite to the first surface; a sheet-like heat-conducting member that contacts the second surface; and a heat exchange section that has a flow channel for fluid passage and a third surface that contacts the heat-conducting member, through which heat is exchanged with the heater section. A suction hole, penetrating the heat exchange section, the heat-conducting member, and the heater section; and an intermediate member, located between the heater section and the heat exchange section, having a thickness approximately the same as that of the heat-conducting member.

2. The semiconductor device processing apparatus as described in claim 1, wherein, The suction hole includes: a first through hole formed in the heater section; a second through hole formed in the heat-conducting member and communicating with the first through hole; and a third through hole formed in the heat exchange section and communicating with the second through hole.

3. The semiconductor device processing apparatus as described in claim 1, wherein, The heat-conducting component has a fourth through hole; the intermediate component is disposed in the fourth through hole.

4. The semiconductor device processing apparatus as described in claim 1, wherein, The retaining unit includes a plurality of the intermediate members; the plurality of intermediate members are concentric with the center of the first surface in a top view and are arranged at equal intervals in the circumferential direction.

5. The semiconductor device processing apparatus as described in claim 1, wherein, The intermediate component has higher rigidity than the heat-conducting component.

6. The semiconductor device processing apparatus as described in claim 1, wherein, The intermediate component is integrally formed with the heat exchange section.

7. The semiconductor device processing apparatus as described in any one of claims 1 to 6, wherein, The retaining unit includes: a frame member that contacts and presses against the outer periphery of the heater section; and a fixing member that fixes the frame member to the heat exchange section.

8. The semiconductor device processing apparatus as described in claim 7, wherein, The frame member is separated from the heater portion in the planar direction, and at the same time, contacts the outer periphery in a direction perpendicular to the planar direction; a first gap is formed between the heater portion and the frame member in the planar direction.

9. The semiconductor device processing apparatus as described in claim 7, wherein, A second gap is formed between the heat exchange section and the frame member in a direction perpendicular to the plane direction of the heater section.

10. The semiconductor device processing apparatus as described in claim 7, wherein, The first surface protrudes from the frame member.

11. The semiconductor device processing apparatus as described in claim 10, wherein, The heater section includes: a first portion having the first surface; and a second portion disposed around the first portion; the height of the second portion is lower than the height of the first portion; and the frame member presses the second portion toward the heat exchange section.

12. The semiconductor device processing apparatus as described in claim 1, wherein, The heater section has a rectangular planar shape; the heater section includes a plurality of fifth through holes located on the diagonals of the four corners of the heater section; the retaining unit further includes a plurality of pins passing through the fifth through holes; in the diagonal direction of the heater section, a third gap is formed between the inner wall of the fifth through holes and the pins, thereby the heater section is retractably retained in the heat exchange section in the diagonal direction.

13. The semiconductor device processing apparatus as described in claim 12, wherein, The pins are erected on the third side in a manner that surrounds the heat-conducting component.

14. The semiconductor device processing apparatus as described in claim 1, wherein, The heater part has a rectangular planar shape; the suction hole includes a plurality of first through holes disposed on the first surface; the plurality of first through holes are disposed on the diagonal of the first surface.

15. A semiconductor device testing apparatus for testing a device under test, comprising: The contact area; The tester is electrically connected to the contact portion; And a semiconductor device processing apparatus as described in any one of claims 1 to 14.

Images