Image sensing device manufacturing method

Abstract

This invention provides a method for manufacturing an image sensing device, comprising a cover glass providing step, a first optical film forming step, a first protective layer forming step, a barrier setting step, an etching step, and a bonding step. The first optical film forming step forms a first optical film on a first surface of the cover glass. The first protective layer forming step forms a first protective layer on the first optical film, the first protective layer being adapted to resist chemical etching. The barrier setting step forms a barrier layer on the first protective layer. The etching step subjects the barrier layer, the first optical film, the first protective layer, and the cover glass to an etching process. The bonding step covers and bonds the barrier layer, the first optical film, the first protective layer, and the cover glass to an image sensing structure. This solves the problem of optical loss caused by chemical etching.

Claims

1. A method for manufacturing an image sensing device, comprising: a cover glass providing step, providing a cover glass; a first optical film forming step, forming a first optical film on a first surface of the cover glass; a first protective layer forming step, forming a first protective layer on the first optical film, the first protective layer being adapted to resist chemical etching; a dike setting step, forming a dike layer on the first protective layer; an etching step, subjecting the dike layer, the first optical film, the first protective layer and the cover glass to an etching process, the etching process causing a middle portion of the dike layer to be chemically etched away to form a hollow region; and a bonding step, covering and bonding the dike layer, the first optical film, the first protective layer and the cover glass to an image sensing structure, such that the dike layer corresponds to a non-sensing area of ​​the image sensing structure and the hollow region corresponds to a sensing area of ​​the image sensing structure.

2. The method for manufacturing an image sensing device as described in claim 1 further includes a second optical film forming step and a second protective layer forming step, wherein the second optical film forming step is performed after the first protective layer forming step, wherein a second optical film is formed on a second surface of the cover glass in the second optical film forming step, and a second protective layer is formed on the second optical film in the second protective layer forming step.

3. The method for manufacturing the image sensing device as described in claim 1, wherein, In the first protective layer forming step, a material of the first protective layer includes silicon nitride, zirconium dioxide, hafnium dioxide, or tantalum pentoxide.

4. The method for manufacturing the image sensing device as described in claim 3, wherein, The first protective layer is doped with a single-component nitride or a single-component oxide.

5. The method for manufacturing an image sensing device as described in claim 1 further includes a surface modification film forming step, wherein the surface modification film forming step is performed after the first protective layer forming step to form a surface modification film on the first protective layer, wherein a water droplet angle of the surface modification film is smaller than a water droplet angle of the first protective layer.

6. The method for manufacturing the image sensing device as described in claim 1, wherein, In the first protective layer forming step, the thickness of the first protective layer is greater than or equal to 1 nm and less than or equal to 12 nm.

7. The method for manufacturing the image sensing device as described in claim 1, wherein, In the first optical film formation step and the first protective layer formation step, the first optical film and the first protective layer are formed by a plasma-assisted reactive magnetron sputtering method.

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