Structure for electrostatic discharge protection device

Abstract

A structure for an electrostatic discharge protection device (ESD) is disclosed, comprising a first metal winding layer, a second metal winding layer, and a current redistribution structure. The first metal winding layer is connected to a first element. The second metal winding layer is connected to a second element, and the first and second metal winding layers are spaced apart. The current redistribution structure is disposed between the first and second metal winding layers, and includes a current redistribution metal, a contact, and a diffusion region disposed on a substrate. The current redistribution metal is spaced apart from the first and second metal winding layers. The contact is connected to the current redistribution metal. The diffusion region disposed on the substrate is connected to the contact, and the diffusion region has the same doping type as the substrate.

Claims

1. A structure for an electrostatic discharge protection device (ESD) comprising: a first metal winding layer connected to a first element; a second metal winding layer connected to a second element, wherein the first metal winding layer and the second metal winding layer are spaced apart; and a current redistribution structure disposed between the first metal winding layer and the second metal winding layer, the current redistribution structure comprising: a current redistribution metal disposed spaced apart from the first metal winding layer and the second metal winding layer; a contact connected to the current redistribution metal; and a diffusion region connected to the contact; wherein when the first element, the substrate, and the element operating at the second voltage enter a snapback state, the series resistance between the first element and the current redistribution structure is a first resistance value, and the series resistance between the first element, the substrate, and the second element is a second resistance value, wherein the first resistance value is less than or equal to the second resistance value.

2. The structure as described in claim 1, wherein the diffusion region is disposed on a substrate and the diffusion region has the same doping type as the substrate.

3. The structure as described in claim 1, wherein the first metal winding layer, the second metal winding layer, and the current redistribution metal are configured in a finger type.

4. The structure as claimed in claim 1, wherein the diffusion region is a high-concentration P-type doped structure, and the diffusion region is disposed between a high-concentration N-type doped region of the first element and a high-concentration N-type doped region of the element operating at the second voltage.

5. The structure as claimed in claim 1, wherein the diffusion region is a high-concentration N-type doped structure, and the diffusion region is disposed between a high-concentration P-type doped region of the first element and a high-concentration P-type doped region of the element operating at the second voltage.

6. The structure as described in claim 1, wherein the length of the current redistribution metal projected vertically onto the substrate is located within the region of the diffusion region.

7. The structure as described in claim 1, wherein the first metal winding layer, the second metal winding layer, and the current redistribution metal are configured to have the same width.

8. The structure as described in claim 1, wherein the current redistribution metal is configured to have the same spacing as the first metal winding layer and the second metal winding layer.

9. The structure as described in claim 7, wherein the first metal winding layer, the second metal winding layer, and the current redistribution metal are made of aluminum, copper, or a combination thereof.

10. The structure as described in claim 1, wherein the length of the current redistribution metal is configured to be less than the lengths of the first metal winding layer and the second metal winding layer.

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