Separation device
Patent Information
- Application Number
- TW114107948
- Authority / Receiving Office
- TW · TW
- Patent Type
- Patents
- Current Assignee / Owner
- Priority Date
- 2024-03-29
- Filing Date
- 2025-03-04
- Publication Date
- 2026-09-01
- Estimated Expiration
- 2045-03-03
AI Technical Summary
Existing separation devices face issues with liquid residue accumulation during the separation of bonded substrates, leading to decreased kinetic energy of the ejected liquid and potential hindrance in the separation process, which can cause damage to the substrates.
The separation device employs a combination of a rotating holding mechanism, a liquid nozzle for spraying high-pressure liquid, and a gas nozzle to spray gas onto the rotating substrates, effectively managing liquid residue and maintaining kinetic energy for efficient separation.
The device effectively suppresses liquid residue, ensuring efficient separation of bonded substrates without causing damage by maintaining kinetic energy and facilitating complete drainage of liquids, thereby promoting safe and reliable substrate separation.
Smart Images

Figure TWG2TB001908727_001 
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Abstract
Description
Technical Field
[0001] The embodiments of the present invention relate to a separation device. Prior Technology
[0002] Sometimes a technique is needed to separate board components. For example, a separation device is proposed that uses water jet to separate a pair of bonded substrates, i.e., bonded substrates (an example of board components) (see Patent Document 1). In this separation device, a holding mechanism holds the bonding substrate and rotates it. High-pressure liquid is sprayed from a nozzle toward the side of the bonding substrate. The sprayed liquid enters between the substrates (inside the bonding substrate) and creates a wedge effect, thereby separating the bonding substrates.
[0003] However, as the bonding substrates separate, the liquid that has entered between them becomes difficult to drain. Because high-pressure liquid is continuously ejected from the nozzle, if liquid remains between the substrates, the high-pressure liquid ejected from the nozzle may sometimes collide with the remaining liquid. If the high-pressure liquid ejected from the nozzle collides with the remaining liquid, the kinetic energy of the ejected liquid will decrease, potentially hindering the separation of the bonding substrates.
[0004] Therefore, it is desirable to develop a separation device that can suppress liquid residue inside the plate components during separation. [Existing Technical Documents] [Patent Literature]
[0005] [Patent Document 1] Japanese Patent Application Publication No. 2000-150456 Summary of the Invention
[0006] [The problem that the invention aims to solve] The problem to be solved by the present invention is to provide a separation device that can suppress liquid residue inside the plate component during separation. [Methods for solving problems]
[0007] The separation device of the embodiment includes: a rotating holding part for holding and rotating the plate member; a first nozzle for spraying liquid onto the side of the rotating plate member; and a second nozzle for spraying gas onto the side of the rotating plate member. [The effects of the invention]
[0008] According to an embodiment of the present invention, a separation device is provided that can suppress liquid residue inside the plate component during separation. Simple Explanation of the Diagram
[0009] Figure 1 is a schematic diagram illustrating the separation device of this embodiment. Figure 2 is a schematic perspective view of the separation device in Figure 1 viewed from the AA direction. Figure 3 is a schematic diagram for illustrating the separation of the plate components. Figure 4 is a schematic diagram for separating the illustrative panel components. Figure 5 is a schematic diagram for separating the illustrative panel components. Implementation
[0010] Hereinafter, embodiments will be illustrated with reference to the drawings. Furthermore, in each drawing, the same symbols will be used for the same constituent elements, and detailed descriptions will be omitted as appropriate.
[0011] The plate component separated by the separation device 1 of this embodiment is a bonding substrate 100. The bonding substrate 100, for example, has a substrate 101 and a substrate 102 bonded to one side of the substrate 101. There are no particular limitations as long as the substrate 101 and the substrate 102 are plate-shaped. The substrate 101 and the substrate 102 may be, for example, a semiconductor wafer, a substrate containing inorganic materials such as quartz or ceramic, or a substrate containing metal.
[0012] The following describes, as an example, the case where substrate 101 and substrate 102 are semiconductor wafers. A porous layer is provided on one side of substrate 101, and a single-crystal Si layer is provided on the porous layer. A single-crystal Si layer is provided on one side of substrate 102. Furthermore, an insulating layer is provided on the single-crystal Si layer of substrate 101 or the single-crystal Si layer of substrate 102. Substrate 101 and substrate 102 are bonded together via the insulating layer. However, the bonded substrate 100 is not limited to the example shown. The bonded substrate 100 can be formed by bonding substrate 101 and substrate 102 together. Moreover, the board component includes both a board formed by bonding two boards together and separating them by the separating device 1, and a board that is a single piece and separated (divided) into two pieces by the separating device 1.
[0013] Figure 1 is a schematic diagram illustrating the separation device 1 of this embodiment. Figure 2 is a schematic perspective view of the separation device 1 in Figure 1 viewed from the AA direction. Furthermore, to avoid making it cumbersome, Figure 2 omits all components except for the bonding substrate 100, clamp 21, support 22, separation 40 (nozzle 41: an example of the first nozzle, moving part 43) and liquid removal 50 (nozzle 51: an example of the second nozzle). As shown in Figure 1, the separation device 1 includes, for example, a base 10, a rotating holding part 20, a positioning part 30, a separation part 40, a liquid removal part 50, and a controller 60.
[0014] The base 10 can be installed at the location where the separation device 1 is installed. A rotation holding part 20, a positioning part 30, a separation part 40, and a liquid removal part 50 can be provided on one side of the base 10. Furthermore, a base 10a can be provided facing the base 10. A clamping plate 21, a support part 22, a clamping plate 23, a drive part 24, and a moving part 25 (described later) are provided between the base 10a and the base 10. The base 10a can be integrated with the base 10, for example, via a bracket (not shown).
[0015] The rotation holding part 20 holds the bonding substrate 100 formed by bonding a pair of substrates 101 and 102 together and rotates it. The rotating holding part 20 may include, for example, a clamp 21, a support part 22, a clamp 23, a drive part 24, a moving part 25, and an exhaust part 26.
[0016] A clamp 21 is provided on the substrate 101 side of the bonding substrate 100. The clamp 21 holds one side (the substrate 101 side) of the bonding substrate 100. The clamp 21 can be, for example, a vacuum clamp. For example, a suction hole is provided on the substrate 100 side of the clamp 21. An exhaust section 26 is connected to the suction hole.
[0017] The support 22 rotatably supports the clamp 21. The support 22 is provided, for example, on the base 10a. The support part 22 may have, for example, a rotating shaft 22a and a rotating mechanism 22b.
[0018] The rotating shaft 22a extends along the rotation center axis 1a of the separating device 1. A clamping plate 21 is provided at one end of the rotating shaft 22a. The other end of the rotating shaft 22a is connected to the rotating mechanism 22b.
[0019] The rotating mechanism 22b causes the clamp 21 and the clamp 23 (described later) to rotate synchronously. The rotating mechanism 22b may have a timing belt or timing pulley, for example, a synchronization transmission member. This synchronization transmission member connects the rotating shaft 22a, on which the clamp 21 is located, to the drive unit 24 (described later). In this way, the drive unit 24 can cause the clamp 21 and the clamp 23 to rotate simultaneously and at the same speed. Therefore, the structure of the rotating mechanism 22b can be simplified, the control program can be simplified, and even the manufacturing cost of the separation device 1 can be reduced.
[0020] A clamp 23 is provided on the substrate 102 side of the bonding substrate 100. The clamp 23 holds the other side of the bonding substrate 100 (the side opposite to the substrate 101 side). The clamp 23 can be, for example, a vacuum clamp. For example, a suction hole is provided on the side of the clamp 23 facing the substrate 100. An exhaust portion 26 is connected to the suction hole. As shown in FIG1, the clamp 23 holds the side of the bonding substrate 100 facing downwards in the direction of gravity. Therefore, after the bonding substrate 100 is separated into substrate 101 and substrate 102, the clamp 23 will hold the substrate 102 facing downwards in the direction of gravity.
[0021] The drive unit 24 rotates the clamp 23, and the clamp 21 rotates synchronously with the clamp 23 via the rotation mechanism 22b and the rotation shaft 22a. Therefore, the drive unit 24 can rotate the bonding substrate 100 held by the clamp 23 and the clamp 21. Furthermore, the drive unit 24 can control the rotational speed of the bonding substrate 100, or control the start and stop of rotation. The drive unit 24 may, for example, include a control motor such as a servo motor and a rotation shaft 24a. The clamp 23 is provided at one end of the rotation shaft 24a. The other end of the rotation shaft 24a is connected to the control motor via a transmission member or the like.
[0022] Furthermore, as shown in Figure 1, the central axis of the rotation axis 22a, the central axis of the clamp 21, the central axis of the clamp 23, and the central axis of the rotation axis 24a coincide with the rotation axis 1a. That is, these central axes are arranged coaxially. Therefore, when the bonding substrate 100 is rotated, it is possible to suppress the deviation of the relative positions between the clamp 21 and the clamp 23 in the direction orthogonal to the rotation axis 1a.
[0023] The moving part 25 moves the driving part 24 in the direction along the rotation center axis 1a. For example, the moving part 25 raises or lowers the driving part 24. Since a clamp 23 is provided on the driving part 24 (rotation axis 24a), the distance between the clamp 23 and the clamp 21 in the direction along the rotation center axis 1a can be changed by moving the driving part 24 via the moving part 25. Therefore, the moving part 25 can hold and release the substrate 100 attached to it using the clamp 23 and the clamp 21. The moving part 25 may, for example, have a drive mechanism such as a cylinder or hydraulic cylinder, and a guide mechanism for moving the driving part 24 linearly.
[0024] The exhaust section 26 is connected to the clamp 21, for example, via a piping member such as a rotary joint provided in the support section 22. The exhaust section 26 draws gas from between the clamp 21 and the bonding substrate 100 (substrate 101) to create a negative pressure between the clamp 21 and the bonding substrate 100 (substrate 101). Furthermore, the exhaust section 26 is connected to the clamp 23, for example, via a piping member such as a rotary joint provided in the drive section 24. The exhaust section 26 draws gas from between the clamp 23 and the bonding substrate 100 (substrate 102) to create a negative pressure between the clamp 23 and the bonding substrate 100 (substrate 102). The exhaust section 26 may include an exhaust device such as a vacuum pump.
[0025] Furthermore, a gas-liquid separation device can also be installed between the clamping plates 21 and 23 and the exhaust device such as the vacuum pump.
[0026] Furthermore, a pressure control device may be installed between the clamping plate 21 and the gas-liquid separator, and between the clamping plate 23 and the gas-liquid separator. If a pressure control device is provided, the adsorption force of the clamping plate 21 and the clamping plate 23 can be controlled.
[0027] The positioning unit 30 positions the bonding substrate 100 in a direction orthogonal to the rotation center axis 1a. The positioning unit 30 aligns the position of the bonding substrate 100 so that the center of the bonding substrate 100 coincides with the rotation center axis 1a of the separation device 1 when viewed from above. Therefore, the rotation center axis of the positioned bonding substrate 100 can be set as the rotation center axis 1a.
[0028] The positioning part 30 may include, for example, a pin 31, an arm 32, a moving part 33, a moving part 34, a guide part 35, and a absorbing part 36. Multiple sets of the pin 31, arm 32, moving part 33, guide part 35, and absorbing part 36 may be provided.
[0029] Pin 31 is, for example, columnar and extends in the direction along the rotation center axis 1a. The side of pin 31 contacts the side of the substrate 100. Pin 31 may be provided at the upper end of arm 32, for example. Moreover, when viewed from the direction along the rotation center axis 1a, a plurality of pins 31 may be provided in a rotationally symmetrical position about the rotation center axis 1a.
[0030] Arm 32 is plate-shaped and extends in the direction along the rotation center axis 1a. The moving part 33 moves the arm 32 in the direction along the rotation center axis 1a. For example, the moving part 33 raises or lowers the arm 32. The moving part 33 may have a drive mechanism such as a cylinder or a hydraulic cylinder.
[0031] The moving part 34 can be provided relative to the plurality of arms 32. The moving part 34 may have, for example, a linkage mechanism or a cam mechanism, to simultaneously change the position of the plurality of arms 32 in a direction orthogonal to the rotation center axis 1a. For example, the moving part 34 moves the plurality of arms 32 toward the rotation center axis 1a, thereby pressing the side surface of the bonding substrate 100 toward the rotation center axis 1a by the plurality of pins 31. By pressing the side surface of the bonding substrate 100 toward the rotation center axis 1a by the plurality of pins 31, the center of the bonding substrate 100 coincides with the rotation center axis 1a when viewed from above. That is, the bonding substrate 100 is positioned. Moreover, for example, the moving part 34 moves the plurality of arms 32 in a direction away from the rotation center axis 1a, thereby isolating the plurality of pins 31 from the side surface of the bonding substrate 100.
[0032] A guide section 35 is provided between each of the plurality of arms 32 and the moving section 34. The guide section 35 guides the movement of the arms 32 in the direction along the rotation center axis 1a. The guide section 35 may be, for example, a linear movement guide section. With the guide section 35 provided, the relative position between the arms 32 and the moving section 34 in the direction along the rotation center axis 1a can be arbitrarily changed.
[0033] An absorption section 36 is provided between the arm 32 and the moving section 33. The absorption section 36 absorbs positional changes between the arm 32 and the moving section 33 in a direction orthogonal to the rotation center axis 1a. The absorption section 36 may be, for example, an elastic body including rubber or a spring. With the absorption section 36 provided, even if the position between the moving section 33 and the arm 32 deviates due to the moving section 34 in a direction orthogonal to the rotation center axis 1a, the deviation can be absorbed.
[0034] The separation section 40 sprays high-pressure liquid 40a onto the side surface of the rotating bonding substrate 100 to separate the bonding substrate 100 into substrate 101 and substrate 102. Liquid 40a is sprayed toward a layer (e.g., a porous layer or a single-crystal Si layer) disposed between substrate 101 and substrate 102. Liquid 40a can be, for example, ultrapure water. When liquid 40a is water, the separation section 40 can be configured as a water spraying device.
[0035] The separating section 40 may include, for example, a nozzle 41, a supply section 42, and a moving section 43. The nozzle 41 sprays liquid 40a onto the side of the rotating bonding substrate 100. The nozzle 41 is cylindrical, with a spray port 41a at one end. The diameter of the spray port 41a is, for example, about 0.1 mm to 1 mm. The radial width (wall thickness) of the end of the nozzle 41 with the spray port 41a is, for example, about 1 cm to 5 cm. By setting the width of the end of the nozzle 41 in this way, damage to the nozzle 41 can be suppressed even when liquid 40a is sprayed at high pressure. In the direction along the rotation center axis 1a, the central axis of the spray port 41a of the nozzle 41 is located between the substrate 101 and the substrate 102. Moreover, the central axis of the spray port 41a of the nozzle 41 can be set to be approximately parallel to the surface of the clamp 23 on the bonding substrate 100 side.
[0036] The supply unit 42 supplies high-pressure liquid 40a to the nozzle 41. The pressure of the liquid 40a ejected from the nozzle 41 is, for example, about 15 MPa to 90 MPa. The flow rate of the liquid 40a is about 60 mL / min to 150 mL / min.
[0037] The supply unit 42 is connected, for example, via a high-pressure pipe to the end of the nozzle 41 opposite to the side where the spray port 41a is provided. The supply unit 42 may include, for example, a storage tank for collecting liquid 40a, a high-pressure pump for supplying liquid 40a collected in the storage tank to the nozzle 41, a control valve for controlling the flow rate or pressure of liquid 40a supplied to the nozzle 41, and a switching valve for switching the supply and stopping of liquid 40a.
[0038] The moving part 43 moves the position of the nozzle 41 (spray port 41a) between a direction along the tangent of the periphery of the bonding substrate 100 and a direction toward the rotation center axis (e.g., rotation center axis 1a) of the bonding substrate 100. The moving part 43 may be, for example, an XY platform or a robot capable of controlling two or more axes. The moving part 43 may be mounted on the base 10 via a support 43a or the like.
[0039] Here, as shown in FIG1, the bonding substrate 100 is held substantially horizontally by clamps 21 and 23. Therefore, the liquid 40a ejected from nozzle 41 and entering between substrate 101 and substrate 102 is difficult to discharge to the outside of the bonding substrate 100. Since liquid 40a is continuously ejected from nozzle 41, if liquid 40a remains between substrate 101 and substrate 102, the ejected liquid 40a may sometimes collide with the remaining liquid 40a. If the ejected liquid 40a collides with the remaining liquid 40a, the kinetic energy of the ejected liquid 40a decreases. If the kinetic energy of the ejected liquid 40a decreases, it may sometimes hinder the separation of substrate 101 and substrate 102. In this case, if the ejection pressure of liquid 40a is increased to increase the kinetic energy of liquid 40a, the force applied to at least one of substrate 101 and substrate 102 will increase, thereby risking damage to at least one of substrate 101 and substrate 102.
[0040] Furthermore, the liquid 40a ejected from the nozzle 41 may sometimes accumulate on the bonding substrate 100. At this time, as the separation of substrate 101 and substrate 102 progresses, creating a gap between them, the periphery of the upper substrate 101 may sometimes bend downwards due to the weight of the liquid 40a accumulated on the bonding substrate 100. For example, when substrate 101 is a semiconductor wafer, it may be very thin, sometimes less than 800 μm. Therefore, when substrate 101 is a semiconductor wafer, the periphery of substrate 101 is prone to bend downwards due to the weight of the liquid 40a accumulated on the bonding substrate 100.
[0041] On the other hand, the liquid 40a adhering to the lower surface of the substrate 102 is easy to fall off, so there is almost no bending of the substrate 102 due to the weight of the adhering liquid 40a. Therefore, if the periphery of the substrate 101 bends downward, the gap between the substrate 101 and the substrate 102 becomes narrower, and the sprayed liquid 40a has difficulty reaching the central area of the substrate 100. If the sprayed liquid 40a has difficulty reaching the central area of the substrate 100, it may sometimes hinder the separation of the substrate 101 and the substrate 102. Moreover, there is also a risk that the liquid 40a sprayed from the nozzle 41 may collide with the bent substrate 101, causing deformation or damage to the substrate 101.
[0042] Therefore, a liquid removal unit 50 is provided in the separation device 1. As shown in Figures 1 and 2, the liquid removal unit 50 includes, for example, a nozzle 51 and a supply unit 52. Nozzle 51 sprays gas 50a onto the side of the rotating bonding substrate 100. For example, nozzle 51 sprays gas 50a toward the gap between the separated substrates 101 and 102. Gas 50a is not particularly limited as long as it does not react with the materials of substrates 101 and 102. Gas 50a may be, for example, an inert gas such as nitrogen or a rare gas, or CDA (Clean Dry Air).
[0043] The spray pattern of nozzle 51 can be appropriately selected according to the rigidity of substrate 101 and substrate 102, the size of the gap formed between substrate 101 and substrate 102, etc.
[0044] For example, when the injection pattern is linear or conical, the straightness of the injected gas 50a can be improved, and the flow rate can be increased. Therefore, a large kinetic energy can be applied to the liquid 40a remaining between the substrate 101 and the substrate 102 or to the liquid 40a adhering to the bonding substrate 100. However, the increased kinetic energy of the injected gas 50a results in a larger force applied to the separated substrate 101 and substrate 102.
[0045] For example, when the spraying mode is a flat type or a curtain type, the spraying mode can be set to be small in the direction of the rotation center axis 1a of the bonding substrate 100 and large in the direction intersecting the rotation center axis 1a of the bonding substrate 100. For example, for the spraying port 51a of the nozzle 51 that opens at the end on the bonding substrate 100 side, it is sufficient to make the dimension in the direction of the rotation center axis 1a of the bonding substrate 100 smaller than the dimension in the direction intersecting the rotation center axis 1a.
[0046] In the case of the flat type, curtain type, and other spray modes described above, the flow rate of the sprayed gas 50a is slower than that in the case of the straight type, etc. Therefore, the kinetic energy of the sprayed gas 50a can be suppressed from increasing, and thus the force applied to the separated substrate 101 and substrate 102 can be suppressed.
[0047] Therefore, in the case of metal plates or thick substrates, any type of spray pattern is acceptable. However, if the discharge or removal of liquid 40a in a large area is taken into consideration, a flat or curtain-type spray pattern with a large spray area for gas 50a is preferred.
[0048] For example, in the case of semiconductor wafers or thin substrates, the spraying mode is preferably set to a flat type or a curtain type. In this way, liquid 40a can be discharged or removed in a large area, and damage or deformation of at least one of the substrates 101 and 102 can be suppressed.
[0049] The supply unit 52 supplies pressurized gas 50a to the nozzle 51. The supply pressure of gas 50a can be appropriately set according to the rigidity of substrate 101 and substrate 102. For example, the supply pressure of gas 50a can be set to a pressure that allows for the discharge or removal of liquid 40a between substrate 101 and substrate 102 or on substrate 100, and can prevent damage or deformation to at least one of substrate 101 and substrate 102, through experiments or simulations. For example, in the case of semiconductor wafers, the supply pressure of gas 50a can be set to 0.7 MPa or less.
[0050] Furthermore, the pressure or flow rate of gas 50a can be set to a fixed value, or it can be varied according to the opening status of substrates 101 and 102 during separation or the progress of separation. For example, the pressure or flow rate of gas 50a can be increased as separation progresses in the outer peripheral region of the substrate 100. Moreover, in the case of semiconductor wafers or thin substrates, displacement gauges or the like can be used to detect the amount of deflection of at least one of substrates 101 and 102. Furthermore, if a deflection that may cause damage is detected in at least one of substrates 101 and 102, the supply pressure or flow rate of gas 50a can be reduced.
[0051] The supply unit 52 is connected, for example, via a pipe to the end of the nozzle 51 opposite to the side where the injection port is located. The supply unit 52 may include, for example, a gas storage tank or plant pipe containing compressed gas 50a, a control valve for controlling the flow rate or pressure of the gas 50a supplied to the nozzle 51, and a switching valve for switching the supply and stopping of the gas 50a.
[0052] The nozzle 51 can be provided, for example, in the aforementioned moving part 43. When the nozzle 51 is provided in the moving part 43, the nozzle 41 and the nozzle 51 move together. However, the nozzle 51 can also be provided in a moving part different from the moving part 43. In this case, the moving part with the nozzle 51 can be the same as the aforementioned moving part 43. If the nozzle 51 is provided in a moving part different from the moving part 43, the operation of the nozzle 41 and the nozzle 51 can be controlled separately. On the other hand, if the nozzle 41 and the nozzle 51 are provided in a common moving part 43, the structure of the separation device 1 can be simplified, the separation device 1 can be miniaturized, the control program can be simplified, and even the manufacturing cost of the separation device 1 can be reduced.
[0053] Furthermore, nozzle 51 can be fixed in a predetermined position. However, if nozzle 41 moves together with nozzle 51, or nozzle 51 moves in accordance with nozzle 41, gas 50a can be sprayed near the area where liquid 40a has been sprayed. Therefore, liquid 40a remaining between substrate 101 and substrate 102 can be discharged efficiently, or liquid 40a adhering to substrate 101 and substrate 102 can be removed efficiently.
[0054] Furthermore, as illustrated in Figures 1 and 2, nozzles 41 and 51 are arranged in a plane substantially perpendicular to the rotation center axis 1a of the bonding substrate 100. Moreover, nozzles 41 and 51 are arranged such that their axes are parallel to each other. This prevents the gas 50a supplied from nozzle 51 from colliding with the liquid 40a ejected from nozzle 41, thus not hindering the penetration of liquid 40a between substrates 101 and 102, and facilitating the separation of the bonding substrates 100.
[0055] Furthermore, at least one nozzle 51 may be provided. For example, the nozzle 51 illustrated in FIG. 2 or FIG. 3 to 5 described later is provided on the downstream side of nozzle 41 in the rotational direction of the bonding substrate 100, but the nozzle 51 may also be provided on the upstream side of nozzle 41. Moreover, nozzle 51 may be provided on both the downstream side and the upstream side of nozzle 41.
[0056] With the nozzle 51 positioned downstream of the nozzle 41 in the rotational direction of the bonding substrate 100, the gas 50a can remove the liquid 40a ejected from the nozzle 41 and remaining between the substrates 101 and 102, and the liquid 40a accumulated on the bonding substrate 100 can be removed immediately. This causes the periphery of the bonding substrate 100 to flex downwards, thereby preventing the periphery of the substrates 101 and 102 from closing. As a result, the situation where the liquid 40a ejected from the nozzle 41 cannot penetrate between the substrates 101 and 102 and separation is hindered can be prevented.
[0057] Alternatively, if the nozzle 51 is positioned upstream of the nozzle 41 in the rotational direction of the bonding substrate 100, liquid 40a can be sprayed onto the side of the bonding substrate 100 immediately after the liquid 40a remaining between the substrate 101 and the substrate 102 is removed by gas 50a. This removes any liquid 40a remaining before spraying, further reducing the possibility of the sprayed liquid 40a colliding with any remaining liquid 40a.
[0058] Furthermore, by supplying gas 50a between substrate 101 and substrate 102, the peripheral edges of substrate 101 and substrate 102 are opened, and liquid 40a can be sprayed immediately thereafter. In this way, the sprayed liquid 40a can easily penetrate between substrate 101 and substrate 102, thereby promoting separation more efficiently.
[0059] The controller 60 includes, for example, an arithmetic unit such as a central processing unit (CPU) and a memory unit such as memory. The controller 60 is, for example, a computer. The controller 60 controls the operation of each component in the separation device 1 by means of a control program stored in the memory unit.
[0060] Next, the function of the separation device 1, namely, the separation of the bonding substrate 100 as an example of a plate component, will be explained. Figures 3 to 5 are schematic diagrams illustrating the separation of the bonding substrate 100. Furthermore, the shaded areas in Figures 3 to 5 represent the separated regions. Also, Figures 3 to 5 show the case where nozzle 41 and nozzle 51 move together. When nozzle 41 and nozzle 51 move separately, nozzle 51 only needs to perform the same action as nozzle 41.
[0061] In the separation step of the bonding substrate 100, firstly, the clamps 21 and 23 are rotated, thereby causing the bonding substrate 100, which is adsorbed and held in the clamps 21 and 23, to rotate.
[0062] Next, as shown by the solid line nozzle 41 in Figure 3, the nozzle 41, which is in the standby position [a], is moved to the vicinity of the periphery of the bonding substrate 100 and positioned at the separation start position [b]. The separation start position [b] is a predetermined position from the nozzle 41 to the side of the bonding substrate 100, and is the position where the central axis of the spray port 41a of the nozzle 41 coincides with the tangent of the periphery of the bonding substrate 100. The nozzle 41, positioned at the separation start position [b], sprays liquid 40a between the substrate 101 and the substrate 102. At this time, the bonding substrate 100 rotates, so liquid 40a can be sprayed between the substrate 101 and the substrate 102 over the entire periphery of the bonding substrate 100. Therefore, separation can be performed over the entire periphery of the bonding substrate 100.
[0063] Furthermore, since nozzle 51 moves together with nozzle 41, nozzle 51 also moves to the vicinity of the periphery of the bonding substrate 100. Then, gas 50a is sprayed from nozzle 51 toward the side of the bonding substrate 100. At this time, the bonding substrate 100 rotates, so gas 50a can be sprayed between substrates 101 and 102 across the entire periphery of the bonding substrate 100. Therefore, liquid 40a remaining between substrates 101 and 102 is discharged to the outside of the bonding substrate 100. Moreover, gas 50a also flows to the upper and lower surfaces of the bonding substrate 100, so liquid 40a adhering to the upper and lower surfaces is discharged to the outside of the bonding substrate 100.
[0064] Next, as shown in Figures 4 and 5, the bonding substrate 100 is separated by moving the central axis of the spray port 41a of the nozzle 41 toward the separation position [c] of the center of the bonding substrate 100, thereby separating the bonding substrate 100 into substrate 101 and substrate 102. For example, as shown in FIG4, the nozzles 41 and 51 are moved in a manner that follows the separated area, and the separation of the substrate 101 and the substrate 102 by means of the jetting of liquid 40a and the discharge and removal of liquid 40a by means of the jetting of gas 50a can be performed in the area between the periphery and the central area of the bonding substrate 100.
[0065] Subsequently, as shown in FIG5, the nozzle 41 can be positioned at the separation position [c], and liquid 40a can be sprayed from the nozzle 41 toward the center of the bonding substrate 100 to separate the bonding substrate 100 in the central region. Moreover, gas 50a can be sprayed from the nozzle 51 to discharge and remove liquid 40a in the central region of the bonding substrate 100.
[0066] In this separation step of the bonding substrate 100, as shown in FIG3, the nozzle 41 can move from the separation start position [b] along an arc-shaped trajectory to the separation position [c] at the center of the bonding substrate 100. Furthermore, the nozzle 41 is moved in a manner that keeps the distance d between the nozzle 41 and the bonding substrate 100 approximately fixed. By moving the nozzle 41 with the distance d approximately fixed, the spray nozzle 41a can be brought as close as possible to the side of the bonding substrate 100. Moreover, since the nozzle 51 moves together with the nozzle 41, the nozzle 51 can also move along the same trajectory.
[0067] Furthermore, during the movement of nozzle 41 along the aforementioned arc-shaped trajectory, liquid 40a is sprayed, thus spraying liquid 40a towards a portion of the periphery Ra of the bonding substrate 100. Moreover, since nozzle 51 moves together with nozzle 41, gas 50a is sprayed towards region Ra. Furthermore, region Ra is a region on the periphery of the bonding substrate 100 that includes an arc with a central angle of 90 degrees. Even though liquid 40a is sprayed towards this portion of the circumference Ra, due to the rotation of the bonding substrate 100, liquid 40a is sprayed throughout the entire circumference of the bonding substrate 100, thereby enabling separation over the entire area of the bonding substrate 100.
[0068] Next, as shown in FIG5, when the separation progresses to the center of the bonding substrate 100, the injection of liquid 40a from nozzle 41 is stopped, and the injection of gas 50a from nozzle 51 is also stopped. After the separation of the bonding substrate 100 is completed, nozzle 41 and nozzle 51 move to a standby position separated from the bonding substrate 100 [a] (see FIG3). Then, the rotation of clamping plates 21 and 23 is stopped, thereby stopping the rotation of the bonded substrate 100 that has been separated. As described above, the substrate 100 can be separated and bonded.
[0069] The embodiments have been illustrated above. However, the present invention is not limited to these descriptions. For example, in the described embodiment, a separation device 1 with a rotation center axis 1a extending in a generally vertical direction is illustrated, but the present invention can also be applied to a separation device with a rotation center axis 1a extending in a generally horizontal direction. Regarding the foregoing embodiments, any additions, deletions, or design changes to constituent elements, or any additions, omissions, or changes to steps or conditions made by those skilled in the art, as long as they possess the features of the present invention, are also included within the scope of the present invention. For example, the shape, size, material, and configuration of each component included in the separation device 1 are not limited to those illustrated, but can be appropriately changed. Furthermore, the elements included in the foregoing embodiments can be combined as much as possible, and any combination thereof that contains the features of the present invention is also included within the scope of the present invention.
[0070] 1: Separation device 1a: Rotation center axis 10, 10a: Base 20: Rotary retaining part 21, 23: Clamping plate 22: Support Department 22a, 24a: Rotation axis 22b: Rotating mechanism 24: Drive Unit 25, 33, 34, 43: Moving parts 26: Exhaust section 30: Positioning Department 31: Sales 32: Arm 35: Guiding Department 36: Absorption section 40: Separation section 40a: liquid 41, 51: Nozzle 41a, 51a: Injection nozzle 42, 52: Supply Department 43a: Bracket 50: Liquid Removal Section 50a: Gas 60: Controller 100: Lamination substrate 101, 102: Substrate [a]: Standby position [b]: Separation start position [c]: Separation position d: distance Ra: Region
Claims
1. A separation device, comprising: The rotating retainer holds the plate component and allows it to rotate. The first nozzle sprays liquid onto the side of the rotating plate member; And a second nozzle that sprays gas onto the side of the rotating plate member, wherein the first nozzle and the second nozzle are arranged in such a way that their axes become parallel to each other.
2. A separation device, comprising: The rotating retainer holds the plate component and allows it to rotate. The first nozzle sprays liquid onto the side of the rotating plate member; And a second nozzle that injects gas onto the side of the rotating plate member, wherein the dimension of the injection port of the second nozzle at the end opening on the side of the plate member, along the direction of the rotation center axis of the plate member, is smaller than the dimension in the direction intersecting the rotation center axis.
3. A separation device, comprising: The rotating retainer holds the plate component and allows it to rotate. The first nozzle sprays liquid onto the side of the rotating plate member; And a second nozzle that sprays gas onto the side of the rotating plate member, wherein the second nozzle has a flat or curtain-type spray pattern.
4. A separation device, comprising: The rotating retainer holds the plate component and allows it to rotate. The first nozzle sprays liquid onto the side of the rotating plate member; The second nozzle sprays gas onto the side of the rotating plate member; and the first moving part moves the first nozzle between the direction of the tangent along the periphery of the plate member held by the rotation holding part and the direction toward the rotation center axis of the plate member, wherein the second nozzle is disposed on the first moving part.
5. A separation device, comprising: The rotating retainer holds the plate component and allows it to rotate. The first nozzle sprays liquid onto the side of the rotating plate member; A second nozzle sprays gas onto the side of the rotating plate member; a first moving part moves the first nozzle between a direction along the tangent of the periphery of the plate member held by the rotation holding part and a direction toward the rotation center axis of the plate member; and a second moving part moves the second nozzle in accordance with the first nozzle.
6. A separation device, comprising: The rotating retainer holds the plate component and allows it to rotate. The first nozzle sprays liquid onto the side of the rotating plate member; And a second nozzle that injects gas onto the side of the rotating plate member, wherein the pressure or flow rate of the gas injected from the second nozzle changes in response to the propulsion of the separation of the plate member.
7. The separation device as claimed in any one of claims 1 to 6, wherein the second nozzle is disposed upstream of the first nozzle in the rotational direction of the plate member.
8. The separation device as claimed in any one of claims 1 to 6, wherein the second nozzle is disposed downstream of the first nozzle in the rotational direction of the plate member.
Citation Information
Patent Citations
Method for separating composite member and method for producing pasted member
JP2001177080A
Method and device for separating member
JP2003017668A
Separation apparatus and method of sample, and compound member
JP2007194415A
Separating method, separating apparatus, and separating system
TW202314789A