Apparatus for processing substrate

Abstract

This invention relates to a substrate processing apparatus. The substrate processing apparatus of this embodiment includes: a base comprising a plurality of substrate support modules spaced apart at intervals to allow the substrate to be positioned in a plurality of process regions, and capable of rotation; and a plurality of separation gas injection units that inject separation gases to separate the plurality of process regions. The plurality of separation gas injection units inject separation gases with different injection flow rates depending on whether the base rotates or stops.

Description

Technical Field

[0001] The present invention relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus having a plurality of separate gas jets for distinguishing a plurality of process regions. Prior Technology

[0002] Recently, for various purposes such as productivity and process uniformity, substrate processing processes are performed on multiple substrates in a single process chamber.

[0003] Therefore, the substrate processing apparatus includes a separation gas jetting unit for jetting separation gas to divide the processing space of the process chamber into a plurality of process regions. Specifically, the gas jetting structure of the substrate processing apparatus may include a plurality of process gas jetting units corresponding to the plurality of process regions and a plurality of separation gas jetting units disposed between the plurality of process gas jetting units.

[0004] In this process, multiple separation gas injection units inject separation gas at the same flow rate. Specifically, each of the multiple separation gas injection units continuously injects separation gas, which has a flow rate capable of independently maintaining multiple process regions, from the start point to the end point of the substrate processing process of multiple substrates. Summary of the Invention

[0005] The technical problems to be solved Embodiments of the present invention provide a substrate processing apparatus capable of stably processing a substrate mounted on a base during rotational drive of a base without detaching it from the base.

[0006] Problem-solving methods An embodiment of the substrate processing apparatus of the present invention includes: a process chamber comprising a plurality of process regions; a base disposed inside the process chamber and rotatable, the base comprising: a plurality of substrate support modules spaced apart at a certain interval such that at least one substrate is located in each of the process regions; a gas injection structure comprising a plurality of process gas injection units disposed on the upper part of the process chamber for injecting process gas or purge gas onto the opposing substrate support modules, and a plurality of separation gas injection units for injecting separation gas to distinguish the plurality of process regions; and a control unit for controlling the driving of the base and the gas injection structure such that the plurality of process regions simultaneously or sequentially process the substrate, and controlling the injection flow rate from the plurality of separation gas injection units differently according to the rotation and stopping of the base.

[0007] The Effects of Invention According to an embodiment of the present invention, by reducing the flow rate of the separation gas injected into the separation zone during base rotation, it is possible to prevent the substrate affected by centrifugal force due to base rotation from detaching from the substrate support due to the pressure difference between the process zone and the separation zone when passing through the separation zone. Simple Explanation of the Diagram

[0008] Figure 1 is a cross-sectional view showing a substrate processing apparatus according to an embodiment of the present invention; Figure 2 is a bottom view showing the process gas injection section and the separation gas injection section disposed on the cover of the substrate processing apparatus shown in Figure 1; Figure 3 is an enlarged perspective view of the substrate support of the substrate processing apparatus shown in Figure 1; and Figure 4 is a timing diagram illustrating the operation of the gas separation jetting section of the present invention, which sprays the separation gas at different flow rates depending on the rotation and cessation of the base. Implementation

[0009] The advantages and features of the present invention, as well as the methods of implementing them, will become clear from reference to the accompanying drawings and the detailed description of the embodiments. However, the present invention is not limited to the embodiments disclosed below, but is implemented in various different forms, and these embodiments are intended to fully disclose the invention and to fully inform those skilled in the art of the scope of the invention, which is defined only by the scope of the claims. For clarity, the size and relative dimensions of layers and regions in the drawings may be enlarged. Throughout the specification, the same element symbol refers to the same component.

[0010] FIG1 is a cross-sectional view showing a substrate processing apparatus according to an embodiment of the present invention; FIG2 is a bottom view showing a process gas injection section and a separation gas injection section disposed on the cover of the substrate processing apparatus shown in FIG1; FIG3 is an enlarged perspective view of the substrate support of the substrate processing apparatus shown in FIG1. ​​For reference, FIG1 may include a cross-section along line I-I' of FIG2 and a cross-section along line II-II' of FIG3.

[0011] Referring to Figures 1 to 3, for example, the substrate processing apparatus 10 of the present invention may be a spatiotemporally segmented atomic layer deposition apparatus having a processing space divided into a plurality of process regions.

[0012] In the embodiments, the substrate processing apparatus 10 may include a process chamber 100, a gas jet structure 200, a substrate support 300, a heater 450, an exhaust section 500, and a controller 600.

[0013] The process chamber 100 may include a chamber wall 110a and a cover 120. The cover 120 is located at the upper edge of the chamber wall 110a. As the gas jet structure 200 is inserted and fixed between the covers 120, a processing space 110 can be defined within the process chamber 100.

[0014] The process chamber 100 may include a sealing member (not shown in the figures) disposed between the chamber wall 110a and the cover 120. The sealing member may include, but is not limited to, an O-ring.

[0015] In this embodiment, the processing space 110 can be divided into first to fourth process regions A1, A2, A3, and A4, but is not limited thereto. For example, independent substrate processing processes can be performed in each of the first to fourth process regions A1, A2, A3, and A4. In order to enable independent substrate processing processes in each process region A1, A2, A3, and A4, a separation region for jetting separation gas is formed between each process region A1, A2, A3, and A4.

[0016] The gas injection structure 200 may include first to fourth process gas injection units 210, 220, 230, and 240 for supplying process gases to the first to fourth process regions A1, A2, A3, and A4, respectively. In an embodiment, the first to fourth process gas injection units 210, 220, 230, and 240 are spaced apart from each other at 90° intervals. Furthermore, the first to fourth process gas injection units 210, 220, 230, and 240 may be arranged sequentially along a circumferential direction.

[0017] Furthermore, the first to fourth process regions A1, A2, A3, and A4 can be located below the first to fourth process gas injection sections 210, 220, 230, and 240, respectively. This positional relationship of the first to fourth process gas injection sections 210, 220, 230, and 240 to the first to fourth process regions A1, A2, A3, and A4 can be fixed.

[0018] For example, suppose that a one-cycle processing procedure for a substrate S is performed and terminated in the following order: a first processing step (Step 1) in a first process region A1, a second processing step (Step 2) in a second process region A2, a third processing step (Step 3) in a third process region A3, and a fourth processing step (Step 4) in a fourth process region A4. As the substrate S moves, the process region where the substrate S is located changes sequentially according to each step (Step 1, Step 2, Step 3, Step 4). The movement of the substrate S is achieved based on the rotation of the substrate support 300.

[0019] Referring again to Figures 1 and 2, the gas injection structure 200 may include first to fourth process gas supply modules 250a, 250b, 250c, and 250d, respectively connected to the first to fourth process gas injection units 210, 220, 230, and 240. The first to fourth process gas supply modules 250a, 250b, 250c, and 250d supply process gas to their respective process gas injection units.

[0020] For example, assuming that the substrate S is subjected to the first to fourth processing steps (Step 1 to Step 4) in the first to fourth process regions A1, A2, A3, and A4 respectively, and the first to fourth processing steps (Step 1 to Step 4) are different types of processes, the first to fourth process gas supply modules 250a, 250b, 250c, and 250d respectively supply the process gas for performing the first to fourth processing steps (Step 1 to Step 4) to the corresponding process gas injection units.

[0021] In this embodiment, the first process gas supply module 250a can supply inhibitor gas or purge gas to the first process gas injection unit 210. Accordingly, the first process gas injection unit 210 injects inhibitor gas or purge gas into the first process region A1. The inhibitor gas is a deposition-inhibiting gas, which can be a gas with properties that inhibit the adsorption of subsequent process gases.

[0022] Furthermore, the second process gas supply module 250b can supply the first process gas, the second process gas, or the purge gas to the second process gas injection unit 220. Accordingly, the second process gas injection unit 220 can inject the first process gas, the second process gas, or the purge gas into the second process region A2. For example, the first process gas and the second process gas can be different types of process gases, including precursors containing Zr, precursors containing Hf, and precursors containing Ta, but are not limited to these.

[0023] Furthermore, the third process gas supply module 250c can supply third process gas, fourth process gas, or purge gas to the third process gas injection unit 230. Accordingly, the third process gas injection unit 230 can inject third process gas, fourth process gas, or purge gas into the third process region A3. For example, the third process gas and the fourth process gas can be different types of process gases, including precursors containing Al, precursors containing Y, and precursors containing Ti, but are not limited to these.

[0024] Furthermore, the fourth process gas supply module 250d can supply the first reactant gas, the second reactant gas, or the purge gas to the fourth process gas injection unit 240. Accordingly, the fourth process gas injection unit 240 can inject the first reactant gas, the second reactant gas, or the purge gas into the fourth process region A4. For example, the first reactant gas may include an O2 or O3 precursor, and the second reactant gas may include H2O, but it is not limited to these.

[0025] Referring again to Figures 1 and 2, the gas injection structure 200 may include a plurality of separate gas injection sections 260a to 260e. The plurality of separate gas injection sections 260a to 260e are respectively located between adjacent first to fourth process gas injection sections 210, 220, 230, and 240. For example, a plurality of separating gas injection units 260a to 260e may include a first separating gas injection unit 260a located between a first process gas injection unit 210 and a second process gas injection unit 220, a second separating gas injection unit 260b located between a second process gas injection unit 220 and a third process gas injection unit 230, a third separating gas injection unit 260c located between a third process gas injection unit 230 and a fourth process gas injection unit 240, a fourth separating gas injection unit 260d located between a fourth process gas injection unit 240 and a first process gas injection unit 210, and a fifth separating gas injection unit 260e located at the center where the first to fourth separating gas injection units 260a to 260d are connected to each other. The fifth separating gas injection unit 260e may be a curtain-type gas injection unit.

[0026] The first to fifth separate gas injection sections 260a to 260e are located between adjacent first to fourth process regions A1, A2, A3, and A4, respectively, to prevent the various process gases injected into each process region from mixing with each other and from unexpected reactions between process gases and reactants.

[0027] The first to fifth separating gas injection units 260a to 260e can be connected to the separating gas supply module 270 respectively. The separating gas supply module 270 supplies separating gas to the first to fifth separating gas injection units 260a to 260e respectively. For example, the separating gas may include inert gases such as argon (Ar) and nitrogen (N2), but is not limited to them.

[0028] In this embodiment, the first to fifth separating gas injection units 260a to 260e can be connected to the separating gas supply module 270 via corresponding first to fifth separating gas supply lines 271 to 275. For example, the first to fifth separating gas supply lines 271 to 275 can each include a mass flow controller (MFC, not shown in the figure) for adjusting the flow rate of the injection gas supplied to the corresponding separating gas injection unit and a valve (not shown in the figure) that opens and closes according to the signal of the MFC.

[0029] The above embodiments illustrate that the substrate processing apparatus 10 operates in a 4-Zone substrate processing mode. In other embodiments, the substrate processing apparatus 10 may operate in a 2-Zone substrate processing mode.

[0030] For example, according to the 2-Zone substrate processing method, in the second and third process regions A2 and A3 of the first to fourth process regions A1 to A4, the same processing process is performed on two substrates S. Specifically, source gas and purge gas are injected into the second and third process regions A2 and A3, and reaction gas and purge gas are injected into the first and fourth process regions.

[0031] According to the above 4-Zone substrate processing method, the substrates S located in the first to fourth process regions A1 to A4 are moved at 90° intervals to the process region for the next step of processing. In contrast, in the 2-Zone substrate processing method, the substrates S located in the first to fourth process regions A1 to A4 are moved at 180° intervals to the process region for the next step of processing.

[0032] In this embodiment, the movement of the substrate S is achieved by rotating the substrate support 300 that supports the substrate S.

[0033] The substrate support 300 may be disposed inside the processing space 110 of the process chamber 100. For example, the substrate support 300 may be disposed in the lower region of the processing space 110. The substrate support 300 may support a plurality of substrates loaded into the process chamber 100.

[0034] The substrate holder 300 may include a susceptor 310, a rotation shaft 320, and a plurality of substrate support modules 400. The susceptor 310 is generally disk-shaped, but not limited to this. The rotation shaft 320 may be connected to the lower center of the susceptor 310 to allow the susceptor 310 to rotate. That is, the substrate holder 300, specifically the susceptor 310, rotates about the rotation shaft 320. For example, the rotation shaft 320 rotates clockwise.

[0035] A plurality of substrate support modules 400 are mounted in the recesses of the substrate holder 300 and can rotate independently. For example, the substrate support modules 400 may be located on the upper part of the substrate holder 300 so as to face the first to fourth process gas injection sections 210, 220, 230, and 240 respectively during the manufacturing process. Furthermore, the number of substrate support modules 400 corresponds to the number of the first to fourth process gas injection sections 210, 220, 230, and 240.

[0036] In the embodiment, the first to fourth process regions A1 to A4 of the processing space 110 respectively include first to fourth process gas injection sections 210 to 240 and first to fourth substrate support modules 400-1 to 400-4 on the base 310 opposite to each process gas injection section.

[0037] As mentioned above, the positional relationship of the first to fourth process gas injection units 210 to 240 in the first to fourth process regions A1 to A4 is fixed and is independent of the substrate processing process. However, the substrate support module opposite to the first to fourth process gas injection units 210 to 240 can be changed as the substrate processing process proceeds.

[0038] For example, before the substrate processing process begins, the first process gas jet unit 210 and the first substrate support module 400-1, the second process gas jet unit 220 and the second substrate support module 400-2, the third process gas jet unit 230 and the third substrate support module 400-3, and the fourth process gas jet unit 240 and the fourth substrate support module 400-4 may be in a state where they are opposite to each other. However, as the substrate processing process proceeds, in order to perform the next step of the processing process on the substrate S on each substrate support module, the base 310 is rotated under the control of the control unit 600, and as a result, the substrate support modules opposite to the first to fourth process gas jet units 210 to 240 are changed.

[0039] For example, when the substrate processing method of the substrate processing apparatus 10 in this embodiment is a 4-Zone method, the first substrate support module 400-1 moves sequentially towards the first process gas jet 210, the second process gas jet 220, the third process gas jet 230, and the fourth process gas jet 240 according to each processing step (Step 1 to Step 4). The second to fourth substrate support modules 400-2 to 400-4 also move sequentially towards the corresponding process gas jets according to the processing steps, just like the first substrate support module 400-1.

[0040] In addition, when the substrate processing method of the substrate processing apparatus 10 in the embodiment is the 2-Zone method, according to the processing steps, the second and third substrate support modules 400-2 and 400-3 move to face the first and fourth process gas injection units 210 and 240 respectively, and the first and fourth substrate support modules 400-1 and 400-4 move to face the third and second process gas injection units 230 and 220 respectively.

[0041] For example, the base 310 may be rotated 90° or 180° clockwise depending on whether the substrate processing method of the substrate processing apparatus 10 is a 4-Zone method or a 2-Zone method, thereby changing the process area where the first to fourth substrate support modules 400-1 to 400-2 are located.

[0042] In this embodiment, the first to fifth separation gas injection units 260a to 260e continuously inject separation gas into the separation area from the start of the substrate processing process in the substrate processing apparatus 10 until its end. For example, during the period when process gas for substrate S processing and purge gas for removing residual process gas and reaction byproducts are injected into the first to fourth process areas A1 to A4, and during the period when the base 310 rotates to move the substrates S located in the first to fourth process areas A1 to A4 to the process area for the next processing step, the first to fifth separation gas injection units 260a to 260e continuously inject separation gas. Among them, during the period when the base 310 rotates, the first and fourth process gas injection units 210 to 240 and the purge plate (not shown in the figure) inject purge gas into the first to fourth process areas A1 to A4 respectively.

[0043] The separation gas ejected by the first to fifth separation gas ejection sections 260a to 260e is used for complete separation between the first to fourth process regions A1 to A4. During the period when the substrate S processing is performed in the first to fourth process regions A1 to A4, that is, during the period when the base 310 is in a stopped state, the separation gas is ejected at a relatively high flow rate compared to the purge gas ejected by the first to fourth process gas ejection sections 210 to 240. For example, assuming that the purge gas ejected by the first to fourth process gas ejection sections 210 to 240 has a flow rate of 2000 sccm, then when the base 310 is stopped, the separation gas ejected by the first to fifth separation gas ejection sections 260a to 260e has a flow rate of 2500 sccm or more.

[0044] In order to move the substrates S located in the first to fourth process regions A1 to A4 respectively to the process region of the next step, the base 310 rotates, and the substrates S will pass through the separation region. Among them, the substrates S affected by the centrifugal force caused by the rotation of the base 310 may detach from the substrate support module due to the pressure difference between the process region and the separation region.

[0045] Therefore, in this embodiment, the injection flow rate of the separation gas injected by the first to fifth separation gas injection sections 260a to 260e when the base 310 is stopped is different from the injection flow rate of the separation gas injected by the first to fifth separation gas injection sections 260a to 260e when the base 310 is rotating.

[0046] For example, the control unit 600 controls the mass flow controllers (MFCs) (not shown in the figures) respectively installed in the first to fifth separation gas supply lines 271 to 275 as follows: When the base 310 is stopped, the first to fifth separation gas injection units 260a to 260e inject separation gas with a first injection flow rate into the separation area; when the base 310 is rotating, the first to fifth separation gas injection units 260a to 260e inject separation gas with a second injection flow rate lower than the first injection flow rate into the separation area. The second injection flow rate may be the same as or lower than the injection flow rate of the purge gas injected by the first to fourth process gas injection units 210 to 240 and the purge plate (not shown in the figures) during the rotation of the base 310. For example, the second injection flow rate may be the same as or lower than 2000 sccm.

[0047] Figure 4 is a timing diagram illustrating the operation of the separation gas injection unit of an embodiment of the present invention, which injects separation gas at different flow rates depending on the rotation and cessation of the base. For ease of explanation, Figure 4 only shows the first processing step (Step 1) and the second processing step (Step 2) on the substrate S, but it is self-evident to those skilled in the art that multiple processing steps may be performed before the first processing step (Step 1) and after the second processing step (Step 2).

[0048] Referring to FIG4, the first processing step (Step 1) of the substrate includes the steps of injecting process gas for the first processing step (Step 1) into at least one of the first to fourth process regions (A1 to A4) of the process chamber 110 (FIG. 1) for a set time, and the steps of injecting purge gas into the process region for a set time after the process gas injection is completed. During the first processing step (Step 1) of the substrate, the base 310 (FIG. 3) is in a stopped state. Furthermore, the separation gas injection units 260a to 260e (FIG. 2) can inject separation gas into a plurality of separation regions B1 to B5 (FIG. 3) at a first injection flow rate. The first injection flow rate may have a preset maximum injection flow rate value (Max).

[0049] The first processing step (Step 1) of the substrate can be completed after the purge gas is sprayed for a set time. After the first processing step (Step 1) of the substrate is completed, the base 310 will rotate in order to move the substrate to the process area for the next processing step. During the rotation of the base 310, the process gas jetting unit corresponding to the process area where the first processing step (Step 1) of the substrate has been performed will continuously spray purge gas.

[0050] Referring to Figure 4, during the rotation of the base 310, the separating gas injection sections 260a to 260e inject separating gas into a plurality of separating regions B1 to B5 at a second injection flow rate. The second injection flow rate has a relatively lower flow rate value compared to the first injection flow rate, and may have a preset minimum injection flow rate value (Min). For example, the second injection flow rate b of the separating gas is less than or equal to the injection flow rate a of the purge gas injected from the process gas injection section.

[0051] When the substrate is located in the process area for performing the second processing step (Step 2), the base 310 will stop rotating. Then, process gas for the second processing step (Step 2) is injected into the process area where the substrate is located for a set time, followed by the injection of purge gas for a set time. The separation gas injection units 260a to 260e can again inject separation gas into a plurality of separation areas B1 to B5 at a first injection flow rate.

[0052] As described above, the flow rate of the separation gas injected into the separation area when the base 310 is rotating is lower than the flow rate of the separation gas injected into the separation area when the base 310 is stopped, thereby preventing the substrate S from detaching from the substrate support module during the rotation of the base 310.

[0053] The heater 450 may be located inside the processing space 110 of the process chamber 100. The heater 450 may include a hollow H1 for inserting the rotating shaft 320, located at the lower part of the base 310, to heat the base 310 at a predetermined temperature.

[0054] The exhaust unit 500 may include an exhaust line 530, a valve V, and a vacuum pump 540. The exhaust line 530 may connect to the interior of the process chamber 100, the processing space 110, and the vacuum pump 540. The vacuum pump 540 provides a vacuum to the processing space 110, adjusts the vacuum level of the processing space 110, and exhausts process gases and reaction byproducts from the processing space 110. The valve V, located in the exhaust line 530, may be a throttling valve that adjusts the vacuum level of the processing space 110 according to the opening rate.

[0055] At least one exhaust section 500 may be provided in the process chamber 110, and a remote plasma device may also be provided as appropriate.

[0056] The control unit 600 controls the driving of the gas jet structure 200 and the substrate support 300 for the substrate processing process. The control unit 600 uses the ALD method to control each component of the substrate processing apparatus 10 to realize a spatiotemporal segmentation method that integrates spatial segmentation and temporal segmentation.

[0057] As an example, the control unit 600 controls the first to fourth process gas supply modules 250a, 250b, 250c, and 250d, and controls the types of process gases and reaction gases supplied through the first to fourth process gas injection units 210, 220, 230, and 240.

[0058] Furthermore, the control unit 600 can control the MFCs (not shown in the figures) connected to the first to fifth separation gas supply lines 271 to 275 of the separation gas supply module 270 and the first to fifth separation gas injection units 260a to 260e respectively, so that when the base 310 is stopped, separation gas is injected into the separation area at a first injection flow rate, and when the base 310 is rotating, separation gas is injected into the separation area at a second injection flow rate lower than the first injection flow rate.

[0059] Furthermore, the control unit 600 controls the rotation angle of the substrate support 300 (i.e., the base 310) (e.g., rotation and stop operation) to ensure that the first to fourth substrates S1, S2, S3, S4 are positioned relative to the first to fourth process gas injection units 210, 220, 230, 240 and the process gas injection time is determined. Additionally, the rotation speed of the substrate support 300 is adjusted to control the purging process time.

[0060] More specifically, in order to achieve the spatiotemporal segmentation method, the control unit 600 controls the following: when a gas for substrate processing is sprayed onto the first to fourth substrates S1, S2, S3, and S4, the substrate support 300 is stopped; the type of gas sprayed onto the first to fourth substrates S1, S2, S3, and S4 is changed; and when a purging process is to be performed, the substrate support 300 is rotated.

[0061] The present invention has been described in detail above through preferred embodiments, but the present invention is not limited to the embodiments described. Within the scope of the technical concept of the present invention, those skilled in the art can make various changes to the present invention.

[0062] 10: Substrate processing apparatus 100: Process Chamber 110: Processing Space 110a: Chamber wall 120: Cover 200: Gas injection structure 210: First Process Gas Injection Section 220: Second process gas injection section 230: Third Process Gas Injection Section 240: Fourth Process Gas Injection Section 250a: First-process gas supply module 250b: Second process gas supply module 250c: Third Process Gas Supply Module 250d: Fourth Process Gas Supply Module 260a: First Separating Gas Injection Section (Separating Gas Injection Section) 260b: Second Separating Gas Injection Section (Separating Gas Injection Section) 260c: Third Separating Gas Injection Section (Separating Gas Injection Section) 260d: Fourth Separating Gas Injection Section (Separating Gas Injection Section) 260e: Fifth Separating Gas Injection Section (Separating Gas Injection Section) 270: Separated Gas Supply Module 271: First Separation Gas Supply Line 272: Second Separation Gas Supply Line 273: Third Separation Gas Supply Line 274: Fourth Separation Gas Supply Line 275: Fifth Separation Gas Supply Line 300: Substrate support 310: Base 320: Rotation axis 400: Substrate support module 400-1: First substrate support module (substrate support module) 400-2: Second substrate support module (substrate support module) 400-3: Third substrate support module (substrate support module) 400-4: Fourth substrate support module (substrate support module) 450: Heater 500: Exhaust section 530: Exhaust Line 540: Vacuum pump 600: Control Department A1: First Process Area (Process Area) A2: Second Process Area (Process Area) A3: Third Process Area (Process Area) A4: Fourth Process Area (Process Area) a: Purge gas injection flow rate b: Second injection flow rate of the separated gas B1~B5: Separation Area H1: Hollow V: Valve S:Substrate S1: First substrate S2: Second substrate S3: Third substrate S4: Fourth substrate Step 1: First Processing Step Step 2: Second processing step (processing steps)

Claims

1. A substrate processing apparatus, comprising: A process chamber, comprising multiple process areas; A base, disposed inside the process chamber and rotatable, the base comprising a plurality of substrate support modules spaced apart such that at least one substrate is located in each of the process regions; a gas injection structure comprising: a plurality of process gas injection units disposed on the upper part of the process chamber to inject process gas or purge gas onto the opposing substrate support modules; a plurality of separation gas injection units to inject separation gas to separate the plurality of process regions to form separation regions; and a control unit to control the driving of the base and the gas injection structure so that the plurality of process regions simultaneously or sequentially process the substrate, and to control the injection flow rate from the plurality of separation gas injection units differently according to the rotation and stopping of the base, so as to prevent the substrate from detaching from the substrate support module due to the pressure difference between the process region and the separation region when moving between the process regions.

2. The substrate processing apparatus according to claim 1, wherein, The control unit controls the plurality of separating gas injection units as follows: when the base is stopped, the separating gas is injected at a first injection flow rate; when the base is rotating, the separating gas is injected at a second injection flow rate lower than the first injection flow rate.

3. The substrate processing apparatus according to claim 2, wherein, The plurality of separating gas injection units includes: a first to a fourth separating gas injection unit located between the plurality of process gas injection units; and a fifth separating gas injection unit located at the center where the first to fourth separating gas injection units are connected to each other.

4. The substrate processing apparatus according to claim 3, wherein, The gas injection structure further includes: a gas separation supply module for supplying separation gas to the first to fifth gas separation injection units respectively; and first to fifth gas separation supply lines for connecting the gas separation supply module and the first to fifth gas separation injection units respectively. And a mass flow controller (MFC) is installed in the first to fifth separate gas supply lines, respectively.

5. The substrate processing apparatus according to claim 4, wherein, The control unit uses the flow controller to control the first to fifth separating gas injection units as follows: depending on the stop state or rotation state of the base, the separating gas is injected at the first injection flow rate or the second injection flow rate.

6. The substrate processing apparatus according to claim 2, wherein, The second injection flow rate of the separated gas is equal to or lower than the injection flow rate of the purging gas injected by the plurality of process gas injection units.

7. The substrate processing apparatus according to claim 1, wherein, The control unit controls the plurality of process gas injection units as follows: During the rotation of the base, the purging gas is injected into the corresponding process regions of the plurality of process regions.

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