Recycling method of substrate

Abstract

The substrate recycling method includes providing a substrate on which a sacrificial layer is formed, forming a bonding layer on the sacrificial layer, and forming a patterned dielectric layer on the bonding layer. The method further includes performing an epitaxial process after forming the patterned dielectric layer to form a plurality of epitaxial stacks on the bonding layer. The epitaxial stacks are separated from each other by slits formed above the patterned dielectric layer during the epitaxial process. After forming the epitaxial stacks, the method further includes removing the sacrificial layer through the slits.

Claims

1. A method for recycling a substrate, comprising: A substrate is provided having a sacrificial layer formed thereon; A bonding layer is formed on the sacrificial layer; A patterned dielectric layer is formed on the bonding layer; after forming the patterned dielectric layer, an epitaxial process is performed to form a plurality of epitaxial stacks on the bonding layer, wherein the epitaxial stacks form a dividing channel above the patterned dielectric layer and are separated from each other during the epitaxial process; and after forming the epitaxial stacks, the sacrificial layer is removed through the dividing channel to separate the substrate from the bonding layer, wherein the dividing channel exposes the patterned dielectric layer.

2. The method for recycling a substrate as described in claim 1, wherein the step of forming the epitaxial stack on the bonding layer includes: A selective area growth (SAG) process is performed to form the epitaxial stacks on the bonding layer, wherein the selective area growth process simultaneously forms the epitaxial stacks and the slit channel.

3. The substrate recycling method as described in claim 1 or 2, wherein the epitaxial stack material includes gallium nitride (GaN), aluminum gallium nitride (AlGaN), indium gallium nitride (InGaN), indium gallium aluminum nitride (InGaAlN), aluminum indium nitride, or a combination thereof.

4. The method for recycling a substrate as described in claim 1 or 2, wherein the material of the patterned dielectric layer comprises an amorphous silicon oxide.

5. The substrate recycling method as described in claim 1, wherein the material of the sacrificial layer includes silicon oxide, silicon nitride, silicon oxynitride, or a combination thereof.

6. The substrate recycling method as described in claim 5, wherein the sacrificial layer is formed via plasma-assisted chemical vapor deposition (PECVD).

7. The substrate recycling method as described in claim 1, wherein the step of removing the sacrificial layer through the slitting channel includes: A first etching process is performed, which removes the patterned dielectric layer and the bonding layer through a slit channel to expose the sacrificial layer; And perform a second etching process that removes the sacrificial layer through the dividing channel.

8. The substrate recycling method as described in claim 7, wherein the first etching process is a dry etching process.

9. The substrate recycling method as described in claim 7, wherein the second etching process is a wet etching process.

10. The substrate recycling method as described in claim 7, wherein the step of removing the sacrificial layer through the slit channel of the epitaxial stack further comprises: Before performing the first etching process and the second etching process, a protective layer is formed on the bonding layer.

11. A method for recycling a substrate as claimed in claim 1, wherein the substrate comprises: a substrate and a composite material layer, wherein the composite material layer encapsulates the substrate.

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