Method for detecting deep ultraviolet molecules

Abstract

A deep ultraviolet (DUV) molecular detection method provides an optical nano-detection chip, which includes elliptical semiconductor blocks arranged in a mirror-symmetrical, oblique configuration. First UV light is incident on the elliptical semiconductor blocks, causing the light to be reflected to an image sensor to capture a first reflectance and operating wavelength corresponding to the optical nano-detection chip. Next, a nanomolecule to be tested is formed on the elliptical semiconductor blocks. Second UV light is incident on the nanomolecule to be tested, causing the light to be reflected to the image sensor to capture a second reflectance and operating wavelength corresponding to the nanomolecule. Finally, a fingerprint spectrum corresponding to the nanomolecule to be tested is calculated based on the reflectance and operating wavelength, wherein the fingerprint spectrum includes the operating wavelength and its corresponding absorbance.

Claims

1. A deep ultraviolet molecular detection method, comprising the following steps: providing a plurality of optical nano-detection wafers, each optical nano-detection wafer comprising a silicon dioxide substrate and a plurality of on-pillar structures, each on-pillar structure comprising two elliptical silicon dioxide pillars and two elliptical semiconductor blocks respectively located on the two elliptical silicon dioxide pillars, the two elliptical semiconductor blocks comprising hafnium dioxide or aluminum nitride and arranged in a mirror-symmetric angled configuration, the two elliptical silicon dioxide pillars being disposed on the silicon dioxide substrate and arranged in a mirror-symmetric angled configuration, the length of the minor axis of the elliptical semiconductor block being W, and the height of the elliptical silicon dioxide pillar being H, 3.125 < ≤ 11; A first deep ultraviolet light is shone onto the plurality of pillar-lifted structures of the plurality of optical nanodetectors. The plurality of pillar-lifted structures of the plurality of optical nanodetectors reflect the first deep ultraviolet light to an image sensor to capture the first light reflectance and operating wavelength corresponding to the plurality of pillar-lifted structures of the plurality of optical nanodetectors. A nanomolecule to be tested is formed on the plurality of pillar-lifted structures of the plurality of optical nanodetectors and the silicon dioxide substrate. A second deep ultraviolet light is shone onto the nanomolecule to be tested. The nanomolecule to be tested reflects the second deep ultraviolet light to the image sensor to capture the second light reflectance and the operating wavelength corresponding to the nanomolecule to be tested. The image sensor calculates the spectral fingerprint corresponding to the nanomolecule to be tested based on the operating wavelength, the first light reflectance and the second light reflectance, wherein the spectral fingerprint includes the operating wavelength and its corresponding light absorption rate.

2. The deep ultraviolet molecule detection method as described in claim 1, wherein the first deep ultraviolet light and the second deep ultraviolet light are respectively directed through a low numerical aperture objective lens to the plurality of pillar-lifted structures of the plurality of optical nano-detection wafers and the nanomolecule to be detected.

3. The deep ultraviolet molecule detection method as described in claim 1, wherein the first deep ultraviolet light and the second deep ultraviolet light are respectively directed through a beam splitter to the plurality of pillar-lifted structures of the plurality of optical nano-detection wafers and the nanomolecule to be detected.

4. The deep ultraviolet molecular detection method as described in claim 1, wherein the nanomolecule to be detected is a tyrosine molecule.

5. The deep ultraviolet molecular detection method as described in claim 1, wherein the two elliptical semiconductor blocks correspond to a central axis of symmetry, the angle between the major axis of the elliptical semiconductor block and the central axis of symmetry is 30 degrees, the length of the major axis is 128–90 nanometers, the length of the minor axis of the elliptical semiconductor block is 64–45 nanometers, the height of the elliptical silicon dioxide pillar is 700 nanometers, and the thickness of the elliptical semiconductor block is 60 nanometers.

6. A deep ultraviolet molecular detection method, comprising the following steps: providing a plurality of optical nano-detection wafers, each optical nano-detection wafer comprising a semiconductor substrate, a silicon dioxide layer and a plurality of patterned structures, each patterned structure comprising two elliptical semiconductor blocks, the semiconductor substrate having an opening extending through itself, the silicon dioxide layer disposed on the semiconductor substrate and shielding the opening, the two elliptical semiconductor blocks comprising hafnium dioxide or aluminum nitride and arranged in a mirror-symmetric angled configuration, the two elliptical semiconductor blocks disposed on the silicon dioxide layer, the thickness of the silicon dioxide layer being 10–75 nanometers; irradiating the plurality of patterned structures of the plurality of optical nano-detection wafers with a first deep ultraviolet light, the plurality of patterned structures of the plurality of optical nano-detection wafers reflecting the first deep ultraviolet light to an image sensor, thereby capturing the first light reflectance and operating wavelength corresponding to the plurality of patterned structures of the plurality of optical nano-detection wafers; The nanomolecules to be tested are formed on the multiple patterned structures and silicon dioxide layers of the multiple optical nanodetection chips, and the nanomolecules to be tested are irradiated with a second deep ultraviolet light. The nanomolecules to be tested reflect the second deep ultraviolet light to the image sensor to capture the second light reflectance and the working wavelength corresponding to the nanomolecules to be tested. The image sensor calculates the spectral fingerprint corresponding to the nanomolecules to be tested based on the working wavelength, the first light reflectance and the second light reflectance, wherein the spectral fingerprint includes the working wavelength and its corresponding light absorption rate.

7. The deep ultraviolet molecule detection method as described in claim 6, wherein the first deep ultraviolet light and the second deep ultraviolet light are respectively directed through a low numerical aperture objective lens onto the plurality of patterned structures of the plurality of optical nanodetection wafers and the nanomolecule to be detected.

8. The deep ultraviolet molecule detection method as described in claim 6, wherein the first deep ultraviolet light and the second deep ultraviolet light are respectively directed through a beam splitter to the plurality of patterned structures of the plurality of optical nanodetection wafers and the nanomolecule to be detected.

9. The deep ultraviolet molecular detection method as described in claim 6, wherein the semiconductor substrate is a silicon substrate.

10. The deep ultraviolet molecular detection method as described in claim 6, wherein the nanomolecule to be detected is a tyrosine molecule.

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