Method for forming semiconductor structure

Abstract

This disclosure provides a method for forming a semiconductor structure, comprising the following steps: providing a substrate; forming a first pattern on the top surface of the substrate; removing a portion of the substrate using the first pattern as a mask to form an isolation trench defining a plurality of active regions; and applying a hydrophobic treatment to the side surfaces of the isolation trench, such that the side surfaces of the isolation trench are first hydrophobic surfaces.

Claims

1. A method for forming a semiconductor structure, comprising: Provide a base; A first pattern is formed on the top surface of the substrate; A portion of the substrate is removed using the first pattern as a mask to form an isolation trench defining a plurality of active regions; the side surfaces of the isolation trench are hydrophobically treated such that the side surfaces of the isolation trench are a first hydrophobic surface, wherein the hydrophobic treatment causes the surface of the first pattern to be a second hydrophobic surface; and the first pattern is removed by a wet etching process to expose the top surface of the substrate, wherein the top surface of the substrate is a hydrophilic surface.

2. The method as described in claim 1, wherein the first hydrophobic surface and the second hydrophobic surface are directly connected to each other.

3. The method of claim 1, wherein the hydrophobic treatment comprises a gas-phase treatment by introducing hexamethyldisilazane (HMDS).

4. The method as described in claim 1, wherein the hydrophobic treatment includes plasma treatment.

5. The method of claim 4, wherein the plasma treatment uses a source gas comprising F, H2, N2 or a combination thereof.

6. A method for forming a semiconductor structure, comprising: Provide a base; A first pattern is formed on the top surface of the substrate; A portion of the substrate is removed using the first pattern as a mask to form an isolation trench defining a plurality of active zones; the side surfaces of the isolation trench are hydrophobically treated such that the side surfaces of the isolation trench are a first hydrophobic surface, wherein the hydrophobic treatment includes plasma treatment using a source gas containing carbon tetrafluoride (CF4).

7. The method of claim 6, wherein the plasma treatment includes a source gas used for ashing treatment, the source gas comprising H2 and N2.

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