Wafer pairing and bonding method and system thereof

Abstract

A wafer pairing and bonding method and system thereof. The bonding method includes the following steps: testing a wafer group that has not undergone bonding process to generate first test data; collecting the first test data and analyzing the first test data to construct a test model, and generating a bonding pairing table for the wafer group based on the test model; performing the bonding process on the wafers in the wafer group one by one according to the current bonding pairing table; testing the wafers that have undergone bonding process to generate second test data and third test data; and collecting the second test data and third test data, and analyzing the first test data, second test data and third test data to dynamically update the test model and bonding pairing table during the bonding process.

Claims

1. A wafer pairing and bonding method, comprising the following steps: testing a wafer group that has not undergone a bonding process to generate first test data; collecting the first test data and analyzing the first test data to construct a test model, and generating a bonding pairing table for the wafer group based on the test model; performing the bonding process on multiple wafers in the wafer group one by one according to the current bonding pairing table; testing the wafers that have undergone the bonding process to generate second test data and third test data; and collecting the second test data and the third test data, and analyzing the first test data, the second test data and the third test data to dynamically update the test model and the bonding pairing table during the execution of the bonding process.

2. The wafer pairing and bonding method as described in claim 1, wherein the step of analyzing the first test data to construct the test model includes: The first test data is analyzed in conjunction with a fourth test data obtained in the previous test to summarize the correlation between the first test data and the fourth test data, and the test model is constructed accordingly.

3. The wafer pairing and bonding method as described in claim 1, wherein the step of analyzing the first test data to construct the test model includes: An interpolation method was used to analyze the first test data in order to construct the test model.

4. The wafer pairing and bonding method as described in claim 1, wherein the wafers in the wafer group include a plurality of first wafers and a plurality of second wafers, and the bonding and pairing table records the pairing relationship between the first wafers and the second wafers.

5. The wafer mating and bonding method as described in claim 4, wherein the step of performing the bonding process on each wafer in the wafer group according to the current bonding mating table includes: According to the bonding pairing table, the bonding process is performed on each of the first wafers and the second wafers that are paired with each other in the wafer group.

6. The wafer mating and bonding method as described in claim 1 further includes: Each time the bonding pairing table is updated, the bonding process is performed on the wafers in the wafer group that have not yet been bonded, according to the updated bonding pairing table, until all the wafers in the wafer group have undergone the bonding process.

7. The wafer mating and bonding method as described in claim 1, wherein the step of testing the wafers performing the bonding process to generate the second test data and the third test data includes: The wafers undergoing the bonding process are tested to generate the second test data; And test the wafers after the bonding process is completed to generate the third test data.

8. The wafer mating and bonding method as described in claim 1, wherein the step of analyzing the first test data, the second test data, and the third test data to dynamically update the test model and the bonding mating table during the bonding process includes: The first test data, the second test data, and the third test data are analyzed to summarize the correlation between them, and the test model and the adhesion pairing table are dynamically updated accordingly.

9. The wafer mating and bonding method as described in claim 1, wherein the step of analyzing the first test data, the second test data, and the third test data to dynamically update the test model and the bonding mating table during the bonding process includes: Based on a large language model, the first test data, the second test data, and the third test data are analyzed in conjunction with yield data to summarize the correlation between the first test data, the second test data, the third test data and the yield data, and to dynamically update the test model and the adhesive pairing table accordingly.

10. The wafer pairing and bonding method as claimed in claim 1, wherein the first test data includes edge collapse measurement data, a height radial second derivative, a warpage, a conductive layer depression data, and an etching measurement data; the second test data includes a stacking measurement data, an alignment accuracy, and an adhesion wave propagation measurement data; and the third test data includes a void inspection data obtained by scanning acoustic microscopy.

11. A wafer pairing and bonding system, comprising: A first testing apparatus is configured to test a wafer assembly that has not undergone a bonding process to generate first test data; A processing device, coupled to the first testing device, configured to collect the first test data into an internal memory, and analyze the first test data to construct a test model, and generate a bonding pairing table for the wafer set based on the test model; a bonding device, coupled to the processing device, configured to perform the bonding process on multiple wafers in the wafer set one by one according to the current bonding pairing table; and a second testing device and a third testing device, coupled to the processing device and the bonding device, configured to test the wafers performing the bonding process to generate second test data and third test data, wherein the processing device collects the second test data and the third test data into the memory, and analyzes the first test data, the second test data and the third test data to dynamically update the test model and the bonding pairing table during the execution of the bonding process.

12. The wafer pairing and bonding system as claimed in claim 11, wherein the processing device analyzes the first test data in conjunction with a fourth test data obtained in a previous test to determine the correlation between the first test data and the fourth test data, thereby constructing the test model.

13. The wafer pairing and bonding system as claimed in claim 11, wherein the processing apparatus uses an interpolation method to analyze the first test data to construct the test model.

14. The wafer pairing and bonding system as claimed in claim 11, wherein the wafers in the wafer group include a plurality of first wafers and a plurality of second wafers, and the bonding pairing table records the pairing relationships between the first wafers and the second wafers.

15. The wafer pairing and bonding system as claimed in claim 14, wherein the bonding device performs the bonding process on each of the first wafers and the second wafers paired with each other in the wafer group in accordance with the bonding pairing table.

16. The wafer mating and bonding system as claimed in claim 11, wherein each time the bonding mating table is updated, the bonding apparatus performs the bonding process on the wafers in the wafer group that have not yet been bonded, according to the updated bonding mating table, until all the wafers in the wafer group have undergone the bonding process.

17. The wafer mating and bonding system as claimed in claim 11, wherein the second testing device tests the wafers performing the bonding process to generate the second test data, and the third testing device tests the wafers after the bonding process is completed to generate the third test data.

18. The wafer pairing and bonding system as claimed in claim 11, wherein the processing device analyzes the first test data, the second test data and the third test data to summarize the correlation between the first test data, the second test data and the third test data, and dynamically updates the test model and the bonding and pairing table accordingly.

19. The wafer pairing and bonding system as claimed in claim 11, wherein the processing device analyzes the first test data, the second test data, and the third test data in conjunction with yield data based on a large language model to summarize the correlation between the first test data, the second test data, the third test data, and the yield data, and dynamically updates the test model and the bonding and pairing table accordingly.

20. The wafer mating and bonding system as claimed in claim 11, wherein the first test data includes edge collapse measurement data, a height radial second derivative, a warpage, a conductive layer depression data, and an etching measurement data; the second test data includes a stacking measurement data, an alignment accuracy, and an adhesion wave propagation measurement data; and the third test data includes a void inspection data obtained by scanning acoustic microscopy.

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