Wafer handling robot with radial gas curtain and / or interior volume control

Abstract

Systems and techniques for reducing or eliminating particulate contamination caused by wafer handling robots configured for vertical translation are disclosed. In one such technique, a collar may be provided with an opening through which the turntable of the wafer handling robot can extend or retract. The collar may have one or more radial gas channels. Gas guided from the radial channels to the turntable may be deflected downwards upon impact with the turntable and may act to prevent or stop gas from escaping through the opening from the base of the wafer handling robot. In another technique, a bellows may be fixed to the bottom of the turntable and the bottom of the base such that the base volume occupied by the turntable and the bellows remains substantially fixed, regardless of the extent to which the turntable extends from the base.

Description

Technical Field

[0001] This invention relates to a wafer handling robot with radial air curtains and / or internal volume control. Prior Technology

[0002] Semiconductor processing tools often utilize Equipment Front-End Modules (EFEMs), which are large chambers or front chambers (part of the semiconductor processing tool) and typically provide a loading port on one side to receive open-form-on-frame (FOUP) wafer transfer cassettes (FOUPs) for transporting large numbers of wafers (e.g., 25 at a time) between semiconductor processing tools. EFEMs may also typically have one or more loading chambers or other joints on the opposite side of the loading port for introducing wafers into transfer chambers or processing chambers. Wafer handling robots are typically located within the EFEM to transfer wafers between the loading port and loading chambers, as well as possibly other stations within the EFEM (e.g., wafer aligners).

[0003] Wafer handling robots used in EFEM often include the ability to move wafers horizontally (through articulated arms with arm links, each configured to rotate relative to the arm links to which they are attached) and vertically (e.g., through linear translation mechanisms that raise or lower the entire robotic arm assembly).

[0004] This paper proposes an improved configuration for wafer handling robots, which is particularly suitable for certain types of EFEMs, such as those with potentially corrosive internal environments, such as environments with high humidity or the presence of one or more gases (e.g., chlorine, fluorine, or other corrosive substances). Summary of the Invention

[0005] Details of one or more embodiments of the subject matter described in this specification are set forth in the accompanying drawings and the following description. Other features, features, and advantages will become apparent from the description, drawings, and claims.

[0006] The inventors have conceived of at least two different mechanisms that can be used individually or in combination to provide an improved wafer handling robot. These two mechanisms reduce the possibility of particulate contamination caused by the vertical (z-axis) movement of the wafer handling robot.

[0007] A wafer handling robot with z-axis capability typically includes a base that is fixed relative to a chamber or a structure supporting them (e.g., an EFEM; such structures may be simply referred to as chambers herein, but this is to be understood as including EFEMs); a turntable mounted on the base in a manner that allows the turntable to move vertically relative to the base; and one or more robotic arms supported by the turntable and actuated by motors located within the turntable. When the wafer handling robot is in its lowest vertical position, the turntable is typically largely contained within the base and can be raised out of the base through openings in the base when raised to the elevated position. The inventors have determined that the vertical movement of the turntable relative to the base is a source of particulate contamination because with each descent or elevation of the turntable, air (or any atmosphere present in the chamber) is forced out or drawn into the base due to the displacement of the turntable within the base. For example, for a turntable with a diameter of 8 inches and a vertical movement of 18 inches, the turntable may displace more than half a cubic foot of volume during movement.

[0008] When the wafer handling robot is actuated to lower its arm, this displacement may cause gases located within the base to be expelled into the chamber or similar structure surrounding the wafer. This could result in particles originating from devices within the base being expelled into the chamber, where they may come into contact with and contaminate any wafers that may be present. When the wafer handling robot is actuated to raise its arm, this displacement may also cause air from within the chamber to be drawn into the base of the wafer handling robot, which could cause problems in chambers containing corrosive gases. These corrosive gases can damage components inside the base, such as bearings, motors, and cables, potentially affecting the performance or operability of the wafer handling robot. Such corrosion is also known to lead to further particle generation, which may increase the chance of wafer contamination due to the movement of the wafer handling robot.

[0009] The inventors have conceived two particulate reduction technologies applicable to wafer handling robots, such as the aforementioned technologies for reducing or eliminating particulate contamination caused by turntable displacement in such wafer handling robots.

[0010] The first technology involves providing a collar or other structure for a radial air curtain that extends completely around the turntable near the top of the base. The radial air curtain allows a fine radial flow of air (or other gas, such as nitrogen) to be delivered towards the turntable across a relatively small gap. After crossing the gap, the air curtain impacts the side of the turntable and deflects, flowing in a generally vertical direction; some of this airflow flows into the base of the wafer handling robot, while the remainder flows into the chamber. This portion of air flowing into the base tends to push against or resist any airflow that might attempt to escape from the base at the air curtain location, thus causing any particles that might be entrained in this air to remain within the base. This portion of air flowing into the base may also tend to increase the internal pressure within the base (if the base has an exhaust port that allows such gases to escape, the exhaust port size is designed to be small enough to allow a positive pressure differential to be established between the base and the surrounding environment). The resulting positive pressure in the base (relative to the chamber) prevents corrosive elements from entering the base at locations other than the air curtain location. The portion of air flowing into the chamber from the collar or other structure will tend to push against or resist any airflow that might attempt to flow into the base at the air curtain location, thus causing any corrosive elements that might be entrained in such air to remain within the chamber. It will be understood that although “air” is frequently mentioned herein, other gases may be used instead of air, such as nitrogen, as previously described.

[0011] The second technology is a bellows unit, which can be fixed at one end to the bottom of the turntable and at the other end to the base. Therefore, the bellows unit can expand into the internal volume of the base when the turntable rises and can be compressed when the turntable descends. Regardless of the vertical position of the turntable relative to the base, the bellows acts to keep the free volume within the base approximately constant. Therefore, there may be little or no total displacement of air from the base due to the vertical movement of the turntable relative to the base. The bellows also serves to prevent potentially corrosive air from the surrounding environment of the chamber from being drawn into the base from the bottom.

[0012] While either technology alone can reduce the likelihood or severity of particulate contamination, using both technologies can have a synergistic effect, allowing the particulate generation rate of a vertical moving system for wafer handling robots within a chamber to be reduced to virtually nothing, for example, less than 10 particles in a 72-minute window.

[0013] In some embodiments, a device may be provided comprising one or more robotic arms; a turntable supporting the one or more robotic arms; a linear translation mechanism supporting the turntable; and a base supporting the linear translation mechanism. In such devices, the linear translation mechanism may be configured to translate the turntable and the one or more robotic arms relative to the base along a first axis. The base may include an opening sized to allow at least one first portion of the turntable to pass through when the turntable is translated along the first axis. The opening may have one or more radial gas channels extending substantially around the entire opening. The dimensions of the one or more radial gas channels may be fixed. A first gap may exist between the inner edge of the opening and the first portion of the turntable, and the first gap may extend around the outer periphery of the first portion of the turntable.

[0014] In some embodiments of the device, the first gap between the first part of the turntable and the inner edge of the opening may not have any intermediate structure around the entire turntable.

[0015] In some embodiments of the device, the one or more radial gas channels may have a minimum width of less than 1 mm in a direction parallel to the first axis.

[0016] In some embodiments of the device, the one or more radial gas passages may have a minimum width of less than 0.5 mm in a direction parallel to the first axis.

[0017] In some embodiments of the device, the one or more radial gas passages may have a minimum width of less than or equal to 0.25 mm in a direction parallel to the first axis.

[0018] In some embodiments of the device, the one or more radial gas channels may be defined at least partially by one or more first surfaces and one or more second surfaces, and the one or more first surfaces may face the one or more second surfaces and may be separated from the one or more second surfaces by a second gap.

[0019] In some embodiments of the device, the one or more first surfaces and the one or more second surfaces may be perpendicular to the first axis.

[0020] In some embodiments of the device, each of the one or more first surfaces may define a first cross-sectional radial profile relative to a second axis parallel to the first axis and centered on the opening, and each of the one or more second surfaces may define a second cross-sectional radial profile relative to the second axis. The cross-sectional radial profiles may include the one or more first cross-sectional radial profiles and the one or more second cross-sectional radial profiles, each of which may be located in a corresponding plane that coincides with and is parallel to the second axis. Each first cross-sectional radial profile may be defined as an average first linear radial profile within ±30° perpendicular to the second axis, and each second cross-sectional radial profile may be defined as an average second linear radial profile within ±30° perpendicular to the second axis.

[0021] In some embodiments of the device, the device may further include one or more inflation chambers; one or more air inlets; and one or more flow control components configured to regulate the airflow to the one or more air inlets. In these embodiments, each air inlet may be fluidly connected to one of the one or more inflation chamber volumes, each of the one or more inflation chamber volumes may be fluidly connected to at least one of the one or more air inlets, each of the one or more air inlets may be fluidly inserted between one of the one or more inflation chamber volumes and one of the one or more flow control components, and each of the one or more inflation chamber volumes may be fluidly inserted between one of the one or more air inlets and one or more radial gas passages.

[0022] In some embodiments of the device, the device may further include one or more gas sources, and the one or more flow control components may be fluidly connected to the one or more gas sources and configured to supply gas from the one or more gas sources to the one or more inflation chamber volumes at a rate between 25 and 150 standard liters per minute. In these embodiments, the one or more radial gas channels may be sized such that gas from the one or more inflation chamber volumes flows out of the one or more radial gas channels at a velocity of at least 5 m / s.

[0023] In some embodiments of the device, the first part of the turntable may have a first nominal circular cross-section, and the opening may have a corresponding second nominal circular cross-section, the diameter of which is larger than the diameter of the first nominal circular cross-section.

[0024] In some embodiments of the device, the one or more radial gas channels may consist of a single gas channel in the form of a radial slit that extends around the entire opening without any interruption in continuity.

[0025] In some embodiments of the device, the first gap may be between 0.5 mm and 5 mm around the turntable.

[0026] In some embodiments of the device, the device may further include a bellows. A first end of the bellows may be fixed relative to one end of a turntable located within the base, and a second end of the bellows opposite to the first end may be fixed relative to a surface of the base on the side opposite to the opening of the base. The bellows may unfold in response to translation of the turntable away from the base surface, and the bellows may retract in response to translation of the turntable toward the base surface.

[0027] In some embodiments of the device, when viewed along the first axis, the bellows may have a first average closed cross-sectional area, and when viewed along the first axis, the outermost surface or multiple surfaces of the first part of the turntable may define a second average cross-sectional area, and the first average closed cross-sectional area may be substantially equal to the second average cross-sectional area.

[0028] In some embodiments of the device, the first part of the turntable may be nominally circular and have a first nominal diameter, the bellows may have a plurality of pleats, each pleat may have an inner diameter and an outer diameter, and the average value of the inner diameter and the outer diameter of the pleats may be substantially equal to the first nominal diameter.

[0029] In some embodiments of the device, when viewed along the first axis, the base may have one or more exhaust ports in the surface of the base and in the area surrounded by the bellows.

[0030] In some embodiments, a device may be provided comprising one or more robotic arms; a turntable supporting the one or more robotic arms; a linear translation mechanism supporting the turntable; a bellows; and a base supporting the linear translation mechanism. In these embodiments, the linear translation mechanism may be configured to translate the turntable and the one or more robotic arms relative to the base along a first axis. The base may include an opening sized to allow at least one first portion of the turntable to pass through when the turntable is translated along the first axis. A first end of the bellows may be fixed relative to a first end of the turntable located within the base. A second end of the bellows opposite to the first end of the bellows may be fixed relative to a first surface of the base on a side of the base opposite to the opening. The bellows may unfold in response to translation of the turntable away from the base surface and may retract in response to translation of the turntable toward the base surface.

[0031] In some embodiments of the device, the bellows connecting the turntable to the base second surface opposite to the base first surface may be absent.

[0032] In some embodiments of the device, when viewed along the first axis, the bellows may have a first average closed cross-sectional area, and when viewed along the first axis, the outermost surface or multiple surfaces of the first part of the turntable may define a second average cross-sectional area, and the first average closed cross-sectional area may be substantially equal to the second average cross-sectional area.

[0033] In some embodiments of the device, the first part of the turntable may be nominally circular and may have a first nominal diameter, the bellows may have a plurality of pleats, each pleat may have an inner diameter and an outer diameter, and the average value of the inner diameter and the outer diameter of the pleats may be substantially equal to the first nominal diameter.

[0034] In some embodiments of the device, when viewed along the first axis, the base may have one or more exhaust ports in the base surface and within the area surrounded by the bellows.

[0035] In some embodiments of the device, the opening may have one or more radial gas channels extending substantially around the entire opening, the size of which may be fixed, and a first gap may exist between the inner edge of the opening and the first part of the turntable, and the first gap may extend around the outer periphery of the first part of the turntable.

[0036] In some embodiments of the device, the first gap between the first part of the turntable and the inner edge of the opening may not have any intermediate structure.

[0037] In some embodiments of the device, the one or more radial gas channels may have a minimum width of less than 1 mm in a direction parallel to the first axis.

[0038] In some embodiments of the device, the one or more radial gas passages may have a minimum width of less than 0.5 mm in a direction parallel to the first axis.

[0039] In some embodiments of the device, the one or more radial gas passages may have a minimum width of less than or equal to 0.25 mm in a direction parallel to the first axis.

[0040] In some embodiments of the device, the one or more radial gas channels may be defined at least partially by one or more first surfaces and one or more second surfaces, wherein the one or more first surfaces may face the one or more second surfaces and may be separated from the one or more second surfaces by a second gap.

[0041] In some embodiments of the device, the one or more first surfaces and the one or more second surfaces may be perpendicular to the first axis.

[0042] In some embodiments of the device, each of the one or more first surfaces may define a first cross-sectional radial profile relative to a second axis parallel to the first axis and centered on the opening, and each of the one or more second surfaces may define a second cross-sectional radial profile relative to the second axis. The cross-sectional radial profiles including the one or more first cross-sectional radial profiles and the one or more second cross-sectional radial profiles may each be located in a corresponding plane that coincides with and is parallel to the second axis. Each first cross-sectional radial profile may be defined as an average first linear radial profile within ±30° perpendicular to the second axis, and each second cross-sectional radial profile may be defined as an average second linear radial profile within ±30° perpendicular to the second axis.

[0043] In some embodiments of the device, the device may further include one or more inflation chambers; one or more air inlets; and one or more flow control components configured to regulate the airflow to the one or more air inlets. In these embodiments, each air inlet may be fluidly connected to one of the one or more inflation chamber volumes, each of the one or more inflation chamber volumes may be fluidly connected to at least one of the one or more air inlets, each of the one or more air inlets may be fluidly inserted between one of the one or more inflation chamber volumes and one of the one or more flow control components, and each of the one or more inflation chamber volumes may be fluidly inserted between one of the one or more air inlets and one or more radial gas passages.

[0044] In some embodiments of the device, the device may include one or more gas sources. In these embodiments, the one or more flow control components may be fluidly connected to the one or more gas sources and may be configured to supply gas from the one or more gas sources to the one or more inflation chamber volumes at a rate between 25 and 150 standard liters per minute, and the one or more radial gas passages may be sized such that gas from the one or more inflation chamber volumes flows out of the one or more radial gas passages at a velocity of at least 5 m / s.

[0045] In some embodiments of the device, the first part of the turntable may have a first nominal circular cross-section, and the opening may have a corresponding second nominal circular cross-section, the diameter of which is larger than the diameter of the first nominal circular cross-section.

[0046] In some embodiments of the device, the one or more radial gas channels may consist of a single gas channel in the form of a radial slit that extends around the entire opening without any interruption in continuity.

[0047] In some embodiments of the device, the first gap may be between 0.5 mm and 5 mm around the turntable. Simple Explanation of the Diagram

[0048] Figure 1 illustrates an exemplary semiconductor processing tool.

[0049] Figure 2 is an exemplary EFEM diagram of an exemplary wafer handling robot in a first configuration.

[0050] Figure 3 shows an exemplary wafer handling robot in a second configuration as shown in the exemplary EFEM diagram of Figure 2.

[0051] Figure 4 shows an exemplary wafer handling robot in a third configuration as shown in the exemplary EFEM diagram of Figure 2.

[0052] Figure 5 is a cross-sectional view of a portion of an exemplary air curtain system.

[0053] Figure 6 is a cross-sectional view of a portion of another exemplary air curtain system.

[0054] Figure 7 is a cross-sectional view of another exemplary air curtain system.

[0055] Figure 8 is a top cross-sectional view of an exemplary air curtain system.

[0056] Figure 9 is a top cross-sectional view of another exemplary air curtain system.

[0057] Figure 10 is a top cross-sectional view of another exemplary air curtain system. Implementation

[0058] As described above, wafer handling robots used in EFEM or other types of semiconductor processing tool chambers can utilize systems such as those briefly described above to reduce particulate generation caused by the wafer handling robot and reduce the possibility of internal components of the wafer handling robot being exposed to corrosive gases (if the wafer handling robot is used in such environments).

[0059] Figure 1 illustrates an exemplary semiconductor processing tool. In Figure 1, a semiconductor processing tool 100 is shown, comprising an EFEM 110 with a wafer transfer robot 114 located therein. The EFEM 110 may be connected to one or more loading ports 106, which allow wafers housed within a FOUP 108 to be transferred by the wafer transfer robot 114 into the EFEM 110. The EFEM 110 may also be connected to a transfer chamber 102 (or other chambers, such as a processing chamber) via one or more loading chambers 104. The EFEM 110 may also be equipped with a fan unit 112, which forces air within the EFEM downwards into an exhaust system in the base plate of the EFEM 110; in other embodiments, the exhaust system may simply be connected to a negative pressure source, such as an exhaust system with a blower unit, to draw air downwards through the EFEM 110 (in yet another embodiment, the EFEM may not have an exhaust system at all).

[0060] Figure 2 is an exemplary EFEM diagram of an exemplary wafer handling robot in a first configuration. In Figure 2, EFEM 210 is shown; in this example, EFEM 210 is not shown connected to other components, such as loading ports, loading chambers, etc., to avoid excessive clutter and focus the discussion on the wafer handling robot 214. The wafer handling robot 214 may include, for example, a base 230 having a linear translation mechanism 242 configured to raise or lower a turntable 224. In this example, the linear translation mechanism 242 includes a ball screw 244 that passes through a ball screw nut 246 fixed to the turntable 224 and is supported at one end by a bearing support 248 and at the other end by a motor 250. When the motor 250 is actuated to rotate the ball screw 244, the ball screw 244 raises and lowers the ball screw nut 246, thereby causing the turntable 224 to extend or retract through an opening 252 in a direction parallel to the first axis 238. The base 230 may have a housing that generally surrounds and protects the rigid body within the base 230; however, this housing may have numerous openings or leakage channels that allow gas to flow through it between the inside and outside of the housing (discussed later).

[0061] The turntable 224 can support one or more robotic arms, which may include, for example, an upper link 218, a lower link 220, and an end effector 222, which can be actuated by a number of drive motors and other systems located within the turntable (or elsewhere).

[0062] As previously mentioned, wafer handling robots may include one or both of the two technologies described herein, which can reduce particulate generation caused by wafer handling robots and / or help protect wafer handling robots from potentially harmful exposure to corrosive environments.

[0063] The first technique discussed in more detail below includes a radial air curtain that can be provided by a collar 232 defining an opening 252. The collar 232 may include one or more radial gas channels 234 fluidly connected to an inflation chamber volume 236 within the collar 232. Gas can flow into the inflation chamber volume 236 through one or more inlets (not shown) and then flow radially inward from one or more radial gas channels 234 towards the turntable 224 at relatively high velocities (e.g., 5 m / s, 10 m / s, 15 m / s, 20 m / s, 25 m / s or higher). The one or more radial gas channels 234 may be dimensioned to be relatively thin, for example, having a height less than or equal to 1 mm, 0.75 mm, 0.5 mm, or 0.25 mm, to achieve a desired gas velocity for a decrease in volumetric gas flow rate, for example, a volumetric gas flow rate between 25 and 150 standard liters per minute (SLM) or between 50 and 100 SLM. A first gap 240 may exist between the turntable 224 and the collar 232 to allow the first portion 226 of the turntable 224 to translate through the opening 252 without contacting the collar 232. This first gap 240 may be less than or equal to (or between) 5 mm, 4 mm, 3 mm, 2 mm, 1 mm, or 0.5 mm. In this example, the turntable 224 is generally cylindrical and has a first nominal diameter 228, while the opening 252 is a circular opening with a nominal diameter equal to twice the first gap 240 plus the first nominal diameter 228. It will be understood that other embodiments may feature a turntable 224 with a different nominal cross-sectional shape, such as a square, hexagon, etc., and the opening 252 in the collar 232 may be similarly shaped such that the first gap 240 remains generally constant around the periphery of the first portion 226 of the turntable 224, for example, ±10% or ±20%.

[0064] As described above and in more detail below, gases compatible with the environment within the EFEM and / or with the internal components of the wafer handling robot (e.g., clean, dry air, nitrogen, or other gases) may flow through the inflation chamber volume 236, exit from one or more radial gas channels 234, and flow radially inward toward the outer surface of the turntable 224, which may then cause the airflow to be redirected to flow upward and downward along the outer surface of the turntable 224. This portion of the gas flowing downward into the base 230 may be used to push back any gas that might attempt to flow out of the base through the first gap 240, thereby preventing gas flow from within the base 230 and through the opening 252, and any particles that may be entrained therein. The base 230 may also have one or more exhaust fans 265, which may be disposed along the surface of the base 230 (e.g., the bottom surface 264 of the base 230) and may be controlled to exhaust gas from within the base to release pressure within the base 230. The fan speed can be controlled such that the volumetric flow rate of gas passing through the fan is nominally equal to the volumetric flow rate of gas entering the base 230 through the opening 252, for example, approximately half the volumetric flow rate of gas exiting the collar 232. This allows any pressure buildup in the base 230 due to the airflow from the collar 232 to dissipate, thus allowing the airflow from the collar 232 to continue resisting the airflow from within the base 230. In some embodiments, the gas exiting the base 230 through the fan can be drawn downward by the downward airflow in the EFEM (equipped with an exhaust system located on the base plate). In other embodiments, the fan 265 can be omitted and replaced by one or more exhaust ports or outlets, which can be provided to allow gas introduced into the base 230 through the collar 232 to exit the base 230 and enter the surrounding environment of the EFEM 210 or other chambers in which the base 230 is located. In such examples, the vent or discharge port may be sized such that during normal operation (i.e., under the nominal ambient pressure conditions used by EFEM 210 or other chambers during wafer transfer operations, and with collar 232 or other structures providing a radial air curtain at a nominal flow rate), the internal pressure in base 230 remains at least a few Pascals higher than the ambient pressure in EFEM 210, thereby preventing or reducing the possibility of corrosive gases from the environment surrounding EFEM 210 entering base 230.

[0065] A second technique that may be included in a wafer handling robot (used alone or in combination with the radial air curtain discussed above) is the use of a bellows 254 spanning between the bottom of the turntable 224 and its bottom surface 264. The bellows 254, made of a flexible material such as an elastic material, an elastomer-impregnated fabric, or a thin metal, may include a first end 260 fixed to the bottom surface or a plurality of surfaces of the turntable 224 and a second end 262 fixed to the bottom surface 264 of the base 230. The bottom surface 264 of the base 230 may have an exhaust port (or a plurality of exhaust ports) 258 that allows gas to escape from the bellows 254 when it is compressed, for example, when the turntable 224 moves from a raised position to a lowered position.

[0066] In some embodiments, the bellows 254 may have a plurality of pleats 256, each having an inner diameter 266 and an outer diameter 268. The inner diameter 266 and outer diameter 268 of the pleats 256 of the bellows 254 may be selected to produce an average diameter that is approximately equal to (e.g., within ±10% or ±20%) the first nominal diameter 228 of the first portion 226 of the turntable 224. By selecting the inner diameter 266 and outer diameter 268 in this manner, the turntable 224 and the bellows 254 can together occupy a volume within the base 230, which remains nominally constant in size regardless of how far or how small the turntable 224 extends from the base 230. Therefore, the volume of gas displaced within the base 230 (which is not included in the volume of air within the base 230 but is "separated" from the internal volume of the base 230 by the bellows 254) is negligible when the turntable 224 translates in and out of the base 230. Therefore, the use of the bellows 254, as shown in Figure 2, prevents the reciprocating motion of the turntable 224 from causing gas within the base to be forcibly expelled through the opening 252 (or at least significantly reduces the amount of such gas that might be expelled). Figure 3 is an exemplary EFEM diagram of Figure 2 showing the exemplary wafer handling robot in a second configuration (e.g., partially extended), and Figure 4 is an exemplary EFEM diagram of Figure 2 showing the exemplary wafer handling robot in a third configuration (e.g., fully retracted). As can be seen in each configuration, the internal volume 231 of the base 230 remains substantially the same regardless of how much the turntable 224 is extended or retracted. Accordingly, using the bellows in the manner shown in Figures 2 to 4 allows the turntable 224 of the wafer handling robot 214 to extend or retract with almost no air (or gas) displacement within the base 230. This significantly reduces the likelihood that particles entrained in such gas will be forcibly expelled from the base 230 due to such reciprocating motion of the turntable.

[0067] It will also be understood that the bellows discussed above can be used in conjunction with turntables that are not nominally cylindrical. In these embodiments, the inner and outer diameters of the bellows folds can be selected to define an average cross-sectional area (e.g., the area within a circle whose diameter is the average of the inner and outer diameters of the bellows folds), which is approximately equal to the cross-sectional area within the plane perpendicular to the first axis 238 of the outermost surface of the first part of the turntable (or, if a non-circular bellows is used, the average cross-sectional area of ​​the bellows (including the area within the bellows) can be approximately equal to the cross-sectional area within the outermost surface of the first part of the turntable).

[0068] As mentioned above, the bellows discussed above can be used with or without the radial air curtain feature discussed earlier (and vice versa). The radial air curtain feature can be configured in several different ways, which are discussed in more detail below.

[0069] Figure 5 is a cross-sectional view of a portion of an exemplary air curtain system. As can be seen in Figure 5, collar 532 may have an inflation chamber volume 536 supplied with air by one or more air inlets 574. The inflation chamber volume 536 may be configured to distribute gas from one or more air inlets 574 to one or more radial gas channels 534. The one or more radial gas channels 534 may be guided radially inward, for example across a first gap 540 and toward a turntable 524, to guide gas (e.g., air) from the inflation chamber volume 536 to the turntable 524. In the embodiment shown in Figure 5, the one or more radial gas channels 534 take the form of a single circumferential radial slit extending around the turntable 524. In this example, the radial gas channel 534 is provided by a first surface 580 and a second surface 582 that may face each other and are separated by a second gap 584. The first surface 580 may be defined by a first cross-sectional radial profile 586, which in this example is a line, and may be represented by an average first linear radial profile 590. Similarly, the second surface 582 can be defined by the second cross-sectional radial profile 588, which in this example is also a line, and can be represented by the average second linear radial profile 592.

[0070] Although Figure 5 shows a linear radial slit, i.e., in which the average first linear radial profile 590 and the average second linear radial profile 592 are parallel to each other and perpendicular to the first axis 538, as an exemplary radial gas channel, other configurations of radial gas channels may also be used, including radial gas channels having, for example, curved or inclined first and second surfaces.

[0071] Figure 6 is a cross-sectional view of a portion of another exemplary air curtain system. The air curtain system in Figure 6 is similar to that in Figure 5; the last two digits of the same designation in Figure 6 indicate similar structures. For a discussion of these structures, the reader can refer to the discussion in Figure 5 above. The difference between the air curtain system in Figure 6 and that in Figure 5 is that the radial gas passage 634 has a different cross-sectional profile. For example, the radial gas passage 634 is defined by a first surface 680 and a second surface 682. The first surface 680 may have a curved first cross-sectional radial profile 686 defining an average first linear radial profile 690, while the second surface 682 may have a curved second cross-sectional radial profile 688 defining an average second linear radial profile 692. In some of these embodiments, the average first linear radial profile 690 and the average second linear radial profile 692 may each be within ±10°, ±20°, or ±30° of the axis perpendicular to the first axis 638. In some further embodiments, the average first linear radial profile 690 and the average second linear radial profile 692 may, for example, be asymmetrically angled with respect to an axis perpendicular to the first axis 638. For instance, both the average first linear radial profile 690 and the average second linear radial profile 692 may be angled slightly downward toward the base, thus causing the flow of radial curtain gas to be more biased toward the base 230 after impacting the turntable 224, rather than entering the EFEM 210. In another example, both the average first linear radial profile 690 and the average second linear radial profile 692 may be angled slightly upward away from the base, causing the flow of radial curtain gas to be more biased toward entering the EFEM 210 rather than entering the base 230 after impacting the turntable 224. This allows for the regulation of the amount of gas distributed to prevent air from within the base 230 from entering the EFEM 230 via the opening 252 and to prevent gas from within the EFEM 230 from entering the base 230 via the opening 252.

[0072] As previously discussed, gas drawn from one or more radial gas channels of one of the collars discussed herein can be directed to the turntable of a wafer handling robot. Figure 7 is a cross-sectional view illustrating an exemplary air curtain system for such airflow. As shown in Figure 7, a collar 732 with an air chamber volume 736 is shown, which receives gas from an inlet 774 (as indicated by the airflow arrow) and distributes the gas to the radial gas channels 734. Gas discharged from the radial gas channels 734 is guided radially inward, passing through a first gap 740, thereby impacting the side of the turntable 724. The airflow then splits into two general directions—upward back to the EFEM, and downward into the base.

[0073] It will be understood that the collar discussed above, and the radial gas passages it includes, can be provided in several forms. In some embodiments, the collar may be integrated into the housing of the base or another component rather than a separate component. Some embodiments of the air curtain system discussed herein may feature radial gas passages with different geometries. Some of these various embodiments are discussed below.

[0074] Figure 8 is a top cross-sectional view of an exemplary air curtain system. In Figure 8, a collar 832 is shown, comprising an inflation chamber volume 836 supplied with gas through an air inlet 874. A turntable 824 extends through an opening in the collar 832 and is separated from the collar 832 by a first gap 840. Gas from the inflation chamber volume 836 flows through the first gap 840 via radial gas channels 834, which, like some previous collars discussed herein, are single circumferential radial slits. These radial gas channels 834 provide a uniformly distributed airflow around the circumference of the turntable 824.

[0075] Figure 9 is a top cross-sectional view of another exemplary air curtain system. The air curtain system in Figure 9 is similar to that in Figure 8; the last two digits of the same designation in Figure 9 indicate similar structures. Readers can refer to the discussion in Figure 8 to explore these structures. Compared to the air curtain system in Figure 8, the air curtain system in Figure 9 is characterized by four radial gas channels 934, each spanning an arc of approximately 90° and separated from adjacent radial gas channels 934 by small radial walls (not shown, but visible at the 12 o'clock, 3 o'clock, 6 o'clock, and 9 o'clock positions). This arrangement provides a substantially continuous radial air curtain around the circumference of the turntable 924, as the small radial walls provide only minimal airflow interruption. However, the small radial walls provide a useful mechanism to help maintain a constant height of the radial gas channels 934.

[0076] Figure 10 is a top cross-sectional view of another exemplary air curtain system. The air curtain system of Figure 10 is similar to that of Figure 8, and the last two digits of the same reference numerals in Figure 10 indicate similar structures; readers can refer to the discussion in Figure 8 to explore these structures. In Figure 10, there are a large number (e.g., 72) of radial gas channels 1034, each of which is a radially extending hole or channel. These radial gas channels can be arranged in such a close-packed arrangement that extends around the periphery of the turntable 1024 to supply a generally continuous air curtain around the periphery of the turntable 1024 via the various holes or channels.

[0077] It will be understood that the radial air curtain systems discussed above provide consistent and unchanging performance because one or more radial gas channels used in such systems guide gas directly to the turntable and are of fixed size; that is, the second gap of such radial gas channels does not change over time (except for potential thermal expansion effects). This contrasts with floating seal systems, in which the seals surrounding the shaft "float" in space, buffered by thin layers of gas flowing along their outer, upper, and lower surfaces—in which the size of the gaps through which gas flows can change due to the floating movement of the seals, resulting in changes in flow conduction and fluctuations in the gas flow rate within these gaps. Furthermore, the use of floating seals introduces a further potential source of specific generation because the seals themselves can potentially come into contact with other components and thus generate particulate matter, which can then be ejected from the sealed area and potentially enter the EFEM. These radial air curtain systems also offer advantages over systems that use annular inflation chambers around the shaft to supply pressurized gas through, for example, a small number of gas ports (e.g., 2, 4, or 8 gas ports). In these systems, compared to the air curtain system discussed herein (which guides a generally continuous radial air curtain radially inward, thus producing a more uniform airflow distribution), the gas flowing through the smaller annular outlet areas above and below the annular inflation chamber and along the shaft may experience circumferential flow fluctuations due to the pressure difference within the annular inflation chamber, because of its low number of gas ports.

[0078] Wafer handling robots incorporating one or two of the technologies discussed above can be part of a larger semiconductor processing tool, as previously discussed, and can be controlled by one or more controllers.

[0079] The controller may be part of a system (including the examples above) and may be operatively connected to various valves, mass flow controllers, pumps, etc., to receive information from and / or control such devices. Such systems may include semiconductor processing equipment comprising a processing tool or multiple tools, a chamber or multiple chambers, a processing platform or multiple platforms, and / or specific processing components (wafer pedestals, gas flow systems, etc.). Such systems may be combined with electronic equipment to control the operation of semiconductor wafers or substrates before, during, and after processing. Such electronic equipment may refer to a "controller" that controls various components or subcomponents of the system or multiple systems. Depending on the processing conditions and / or system type, the controller may be programmable to control any process disclosed herein, including the delivery of various gases, temperature settings (such as heating and / or cooling), pressure settings, vacuum settings, power settings, flow rate settings, fluid delivery settings, and position and operation settings.

[0080] Broadly speaking, a controller can be defined as an electronic device having various integrated circuits, logic, memory, and / or software for receiving instructions, issuing instructions, controlling operations, initiating cleaning operations, initiating endpoint measurements, and the like. Integrated circuits may include: a wafer in the form of firmware storing program instructions, a digital signal processor (DSP), a wafer defined as an application-specific integrated circuit (ASIC), and / or one or more microprocessors, or a microcontroller that executes program instructions (e.g., software). Program instructions may be transmitted to the controller in the form of various individual settings (or program files), which define operating parameters for implementing a specific process (on the semiconductor wafer, or for the semiconductor wafer, or for the system). In some implementations, the operating parameters may be part of a formulation defined by a process engineer to achieve one or more processing steps during the manufacturing process of one or more of the following: layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or wafer grains.

[0081] In some implementations, the controller may be part of a computer, or coupled to a computer that is integrated with, coupled to, or connected to the system via other networks, or a combination thereof. For example, the controller may be located in all or part of a cloud-based or factory mainframe computer system that allows remote access to wafer processing. The computer enables the system to remotely access and monitor the current progress of manufacturing operations, examine the history of past manufacturing operations, check trends or performance metrics from multiple manufacturing operations, change parameters for the current process, set processing steps after the current process, or start a new process. In some examples, a remote computer (e.g., a server) may provide process recipes to the system via a network, which may include a local area network or the Internet. The remote computer may include a user interface capable of parameter and / or setting input or programming, which can then be transmitted from the remote computer to the system. In some examples, the controller receives instructions in the form of data specifying parameters for each processing step to be performed during one or more operations. It should be understood that parameters can be specific to the type of process to be performed and the type of tool with which the controller is coupled or controlled. Therefore, as mentioned above, the controller can be distributed, for example, by comprising one or more separate controllers that are networked together and operate toward a common purpose (e.g., the process and control described herein). An example of a distributed controller for this purpose is one or more integrated circuits on the chamber that communicate with one or more integrated circuits located remotely (e.g., at the platform level or as part of a remote computer), and the two are combined to control the process on the chamber.

[0082] Exemplary systems may include, but are not limited to, plasma etching chambers or modules, deposition chambers or modules, rotary cleaning chambers or modules, metal-coated chambers or modules, cleaning chambers or modules, beveled edge etching chambers or modules, physical gas phase deposition (PVD) chambers or modules, chemical gas phase deposition (CVD) chambers chambers or modules, atomic layer deposition (ALD) chambers or modules, atomic layer etching (ALE) chambers or modules, ion implantation chambers or modules, developer (track) chambers or modules, and any other semiconductor treatment system that may be associated with, or used, in the manufacture and / or handling of semiconductor wafers.

[0083] As described above, depending on the process steps or plural steps to be performed with recourse to the tool, the controller may communicate with one or more of the following in a semiconductor manufacturing plant: other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, adjacent tools, tools distributed throughout the plant, a master computer, another controller, or a tool used in a material transport, the location of the tool carrying the wafer / container used in or to and from the material transport.

[0084] For the purposes of the present invention, the term "fluid connection" is used with respect to volumes, inflation chambers, orifices, etc. that can be interconnected to form a fluid connection, which is analogous to the manner in which the term "electrical connection" is used with respect to members connected together to form an electrical connection. Where the term "fluid interpolation" is used, it may be used to refer to a member, volume, inflation chamber, or orifice fluidly connected to at least two other members, volumes, inflation chambers, or holes such that from such other members, volumes, inflation chambers or one of the orifices The fluid flowing to such other member, volume, inflation chamber, or other in the orifice flows through the member of the "fluid interposition" before reaching the member, volume, inflation chamber, or the other in the orifice. For example, if the pump fluid is inserted between the vessel and the outlet, the fluid flowing from the vessel to the outlet will flow through the pump before reaching the outlet.

[0085] When understood, the phrase "for each of the one or more items," "for each of the one or more items," or similar expressions used herein include both single groups of items and multiple groups of items. That is, the use of the phrase "for each of" means, in programming languages, that it is used to refer to each item in the entire group of items referred to. For example, if the group of items referred to is a single item, then "each" will refer only to that single item (although in fact, the dictionary definition of "each" is often defined as "each of two or more things"), and does not mean that at least two of such items must be present. Similarly, the terms "set" or "subset" should not be considered by themselves to necessarily contain a plural number of items—it will be understood that a set or subset may contain only one member or multiple members (unless the context indicates otherwise).

[0086] Any ordinal designations used in this invention and the claims (if any), such as (a), (b), (c)... or similar, are to be understood not to indicate any particular order or sequence unless such order or sequence is explicitly specified. For example, if there are three steps labeled (i), (ii), and (iii), it is to be understood that, unless otherwise specified, these steps may be performed in any order (or even simultaneously, if there are no other restrictions). For example, if step (ii) involves processing an element established in step (i), then step (ii) can be considered to occur at some point after step (i). Similarly, if step (i) involves processing an element established in step (ii), then it is to be understood that the opposite is true.

[0087] For example, terms such as “about,” “probably,” “substantively,” “nominally,” and the like, when used to refer to quantities or similar quantifiable characteristics, are to be understood to include values ​​within ±10% of the specified value or relation (and to include the specified actual value or relation), unless otherwise specified.

[0088] It should be understood that all combinations of the foregoing concepts (assuming these concepts are not contradictory) are considered part of the inventive scope disclosed herein. In particular, all combinations of the claims appearing at the end of this invention are considered part of the inventive scope disclosed herein. It should also be understood that the terminology expressly used herein (and may also appear in any disclosure incorporated by reference) should have the meaning most consistent with the specific concepts disclosed herein.

[0089] It should be further understood that while the above disclosure focuses on a specific implementation or multiple implementations, it is not limited to the examples discussed, but can also be applied to similar variations and mechanisms, which are also considered to be within the scope of this invention. It should also be understood that the above disclosure is intended to cover at least the following numbered embodiments.

[0090] Embodiment 1: An apparatus comprising: one or more robotic arms; a turntable supporting one or more robotic arms; a linear translation mechanism supporting the turntable; and a base supporting the linear translation mechanism, wherein: the linear translation mechanism is configured to translate the turntable and one or more robotic arms relative to the base along a first axis, the base including an opening sized to allow at least a first portion of the turntable to pass through when the turntable is translated along the first axis, the opening having one or more radial gas channels extending substantially around the entire opening, the one or more radial gas channels being fixed in size, a first gap existing between the inner edge of the opening and the first portion of the turntable, and the first gap extending around the outer periphery of the first portion of the turntable.

[0091] Implementation 2: The device of Implementation 1, wherein the first gap between the first part of the turntable and the inner edge of the opening has no intermediate structure around the entire turntable.

[0092] Embodiment 3: The device of Embodiment 1, wherein the one or more radial gas channels have a minimum width of less than 1 mm in a direction parallel to the first axis.

[0093] Embodiment 4: The apparatus of Embodiment 1, wherein the one or more radial gas channels have a minimum width of less than 0.5 mm in a direction parallel to the first axis.

[0094] Embodiment 5: The apparatus of Embodiment 1, wherein the one or more radial gas channels have a minimum width of less than or equal to 0.25 mm in a direction parallel to the first axis.

[0095] Embodiment 6: The apparatus of Embodiment 1, wherein: the one or more radial gas channels are defined at least partially by one or more first surfaces and one or more second surfaces, and the one or more first surfaces face the one or more second surfaces and are separated from the one or more second surfaces by a second gap.

[0096] Embodiment 7: The device of Embodiment 6, wherein: the one or more first surfaces and the one or more second surfaces are perpendicular to the first axis.

[0097] Embodiment 8: The device of Embodiment 6, wherein: each of the one or more first surfaces defines a first cross-sectional radial profile relative to a second axis parallel to the first axis and centered on the opening; each of the one or more second surfaces defines a second cross-sectional radial profile relative to the second axis; the cross-sectional radial profiles of the one or more first cross-sectional radial profiles and the one or more second cross-sectional radial profiles are each located in a corresponding plane that coincides with and is parallel to the second axis; each first cross-sectional radial profile is defined as an average first linear radial profile within ±30° perpendicular to the second axis; and each second cross-sectional radial profile is defined as an average second linear radial profile within ±30° perpendicular to the second axis.

[0098] Embodiment 9: The apparatus of Embodiment 1 further includes: one or more air chambers; one or more air inlets; and one or more flow control components configured to regulate the airflow to one or more air inlets, wherein: each air inlet is fluidly connected to one of the volumes of the one or more air chambers, each of the volumes of the one or more air chambers is fluidly connected to at least one of the one or more air inlets, each of the one or more air inlets is fluidly inserted between one of the one or more air chamber volumes and one of the one or more flow control components, and each of the one or more air chamber volumes is fluidly inserted between one of the one or more air inlets and one or more radial gas passages.

[0099] Embodiment 10: The apparatus of Embodiment 9 further includes one or more gas sources, wherein: the one or more flow control components are fluidly connected to the one or more gas sources and configured to supply gas from the one or more gas sources to the one or more inflation chamber volumes at a rate between 25 and 150 standard liters per minute, and the one or more radial gas passages are sized such that gas from the one or more inflation chamber volumes flows out of the one or more radial gas passages at a velocity of at least 5 m / s.

[0100] Implementation 11: The device of Implementation 1, wherein the first part of the turntable has a first nominal circular cross-section, and the opening has a corresponding second nominal circular cross-section, the diameter of which is larger than the diameter of the first nominal circular cross-section.

[0101] Embodiment 12: The apparatus of Embodiment 1, wherein the one or more radial gas channels comprise only a single gas channel in the form of a radial slit that extends around the entire opening without any interruption in continuity.

[0102] Implementation method 13: The device of implementation method 1, wherein the first gap is between 0.5 mm and 5 mm around the turntable.

[0103] Embodiment 14: The apparatus of Embodiment 1 further includes a bellows, wherein: a first end of the bellows is fixed relative to one end of a turntable located within the base, a second end of the bellows opposite to the first end is fixed relative to the surface of the base on one side opposite to the opening of the base, the bellows unfolds in response to translation of the turntable away from the surface of the base, and the bellows retracts in response to translation of the turntable toward the surface of the base.

[0104] Embodiment 15: The device of Embodiment 14, wherein: when viewed along the first axis, the bellows has a first average closed cross-sectional area, and when viewed along the first axis, the outermost surface or multiple surfaces of the first part of the turntable defines a second average cross-sectional area, and the first average closed cross-sectional area is substantially equal to the second average cross-sectional area.

[0105] Implementation 16: The device of Implementation 14, wherein: the first part of the turntable is nominally circular and has a first nominal diameter, the bellows has a plurality of pleats, each pleat has an inner diameter and an outer diameter, and the average value of the inner diameter and the outer diameter of the pleats is substantially equal to the first nominal diameter.

[0106] Embodiment 17: The device of Embodiment 14, wherein when viewed along a first axis, the base has one or more exhaust ports in the base surface and within the area surrounded by the bellows.

[0107] Embodiment 18: An apparatus comprising: one or more robotic arms; a turntable supporting one or more robotic arms; a linear translation mechanism supporting the turntable; a bellows; and a base supporting the linear translation mechanism, wherein: the linear translation mechanism is configured to translate the turntable and one or more robotic arms relative to the base along a first axis, the base including an opening sized to allow at least a first portion of the turntable to pass through when the turntable is translated along the first axis, a first end of the bellows fixed relative to a first end of the turntable located within the base, a second end of the bellows opposite to the first end fixed relative to a first surface of the base on a side of the base opposite to the opening, the bellows unfolding in response to translation of the turntable away from the base surface, and the bellows retracting in response to translation of the turntable toward the base surface.

[0108] Example 19: The device of embodiment 18, wherein there is no bellows connecting the turntable to the base second surface opposite to the base first surface.

[0109] Implementation 20: The device of Implementation 18, wherein: when viewed along the first axis, the bellows has a first average closed cross-sectional area, and when viewed along the first axis, the outermost surface or a plurality of surfaces of the first part of the turntable defines a second average cross-sectional area, and the first average closed cross-sectional area is substantially equal to the second average cross-sectional area.

[0110] Implementation 21: The device of Implementation 18, wherein: the first part of the turntable is nominally circular and has a first nominal diameter, the bellows has a plurality of pleats, each pleat has an inner diameter and an outer diameter, and the average value of the inner diameter and the outer diameter of the pleats is substantially equal to the first nominal diameter.

[0111] Embodiment 22: The device of Embodiment 18, wherein when viewed along a first axis, the base has one or more exhaust ports in the base surface and within the area surrounded by the bellows.

[0112] Embodiment 23: The apparatus of Embodiment 18, wherein: the opening has one or more radial gas channels extending substantially around the entire opening, the one or more radial gas channels having a fixed size, a first gap existing between the inner edge of the opening and the first part of the turntable, and the first gap extending around the outer periphery of the first part of the turntable.

[0113] Implementation 24: The device of Implementation 23, wherein the first gap between the first part of the turntable and the inner edge of the opening has no intermediate structure.

[0114] Embodiment 25: The apparatus of Embodiment 23, wherein the one or more radial gas channels have a minimum width of less than 1 mm in a direction parallel to the first axis.

[0115] Embodiment 26: The apparatus of Embodiment 23, wherein the one or more radial gas channels have a minimum width of less than 0.5 mm in a direction parallel to the first axis.

[0116] Embodiment 27: The apparatus of Embodiment 23, wherein the one or more radial gas passages have a minimum width of less than or equal to 0.25 mm in a direction parallel to the first axis.

[0117] Embodiment 28: The apparatus of Embodiment 23, wherein: the one or more radial gas channels are defined at least partially by one or more first surfaces and one or more second surfaces, and the one or more first surfaces face the one or more second surfaces and are separated from the one or more second surfaces by a second gap.

[0118] Embodiment 29: The apparatus of Embodiment 28, wherein: the one or more first surfaces and the one or more second surfaces are perpendicular to the first axis.

[0119] Embodiment 30: The apparatus of Embodiment 28, wherein: each of the one or more first surfaces defines a first cross-sectional radial profile relative to a second axis parallel to the first axis and centered on the opening; each of the one or more second surfaces defines a second cross-sectional radial profile relative to the second axis; the cross-sectional radial profiles of the one or more first cross-sectional radial profiles and the one or more second cross-sectional radial profiles are each located in a corresponding plane that coincides with and is parallel to the second axis; each first cross-sectional radial profile is defined as an average first linear radial profile within ±30° perpendicular to the second axis; and each second cross-sectional radial profile is defined as an average second linear radial profile within ±30° perpendicular to the second axis.

[0120] Embodiment 31: The apparatus of Embodiment 23 further includes: one or more inflation chambers; one or more air inlets; and one or more flow control components configured to regulate the airflow to one or more air inlets, wherein: each air inlet is fluidly connected to one of the one or more inflation chamber volumes, each of the one or more inflation chamber volumes is fluidly connected to at least one of the one or more air inlets, each of the one or more air inlets is fluidly inserted between one of the one or more inflation chamber volumes and one of the one or more flow control components, and each of the one or more inflation chamber volumes is fluidly inserted between one of the one or more air inlets and one or more radial gas passages.

[0121] Embodiment 32: The apparatus of Embodiment 31 further includes one or more gas sources, wherein: the one or more flow control components are fluidly connected to the one or more gas sources and configured to supply gas from the one or more gas sources to the one or more inflation chamber volumes at a rate between 25 and 150 standard liters per minute, and the one or more radial gas passages are sized such that gas from the one or more inflation chamber volumes flows out of the one or more radial gas passages at a velocity of at least 5 m / s.

[0122] Implementation method 33: The device of implementation method 23, wherein the first part of the turntable has a first nominal circular cross-section, and the opening has a corresponding second nominal circular cross-section, the diameter of which is larger than the diameter of the first nominal circular cross-section.

[0123] Embodiment 34: The apparatus of Embodiment 23, wherein the one or more radial gas channels comprise only a single gas channel in the form of a radial slit that extends around the entire opening without any interruption in continuity.

[0124] Implementation method 35: The device of implementation method 23, wherein the first gap is between 0.5 mm and 5 mm around the turntable.

[0125] 100: Semiconductor processing tools 102: Transfer Chamber 104: Loading Room 106: Loading Port 108: Front-opening wafer transfer box 110: Equipment front-end module 112: Fan Unit 114: Wafer Handling Robot 210: Equipment front-end module 214: Wafer Handling Robot 218: Upper Linkage 220: Lower Linkage 222: End effector 224: Turntable 226: Part One 228: First nominal diameter 230: Base 231: Internal volume 232: Collar 234: Radial gas channel 236: Volume of the inflation chamber 238: First Axis 240: First gap 242: Linear translation mechanism 244: Ball screw 246: Ball screw nut 248: Bearing support component 250: Motor 252: Opening 254: Corrugated pipe 256: pleats 258: Exhaust port 260: First end 262: Second end 264: Bottom surface 265: Exhaust fan 266:Inner diameter 268:Outer diameter 524: Turntable 532: Collar 534: Radial gas channel 536: Volume of the air chamber 538: First Axis 540: First gap 574: Air Inlet 580: First Surface 582: Second Surface 584: Second gap 586: Radial profile of the first cross section 588: Radial profile of the second cross section 590: Average First Linear Radial Profile 592: Average Second Linear Radial Profile 624: Turntable 632: Collar 634: Radial gas channel 636: Inflation chamber volume 638: First Axis 640: First gap 674: Air Inlet 680: First Surface 682: Second Surface 684: Second gap 686: Radial profile of the first cross section 688: Radial profile of the second cross section 690: Average First Linear Radial Profile 692: Average Second Linear Radial Profile 724: Turntable 732: Collar 734: Radial gas channel 736: Inflation chamber volume 740: First gap 774: Air Inlet 824: Turntable 832: Collar 834: Radial gas channel 836: Volume of the inflation chamber 840: First gap 874: Air Inlet 924: Turntable 932: Collar 934: Radial gas channel 936: Volume of the air chamber 940: First Gap 974: Air Intake 1024: Turntable 1032: Collar 1034: Radial gas channel 1036: Volume of the inflation chamber 1040: First gap 1074: Air Intake

Claims

1. A wafer handling apparatus, comprising: one or more robotic arms; a turntable supporting the one or more robotic arms; a linear translation mechanism supporting the turntable; and a base supporting the linear translation mechanism, wherein: the linear translation mechanism is configured to translate the turntable and the one or more robotic arms relative to the base along a first axis, the base including an opening sized to allow at least one first portion of the turntable to pass through when the turntable is translated along the first axis, the opening having one or more radial gas channels extending substantially around the entire opening and configured to guide gas inward toward the turntable, the one or more radial gas channels being fixed in size, a first gap existing between one inner edge of the opening and the first portion of the turntable, and the first gap extending around the outer periphery of the first portion of the turntable.

2. The wafer handling apparatus as claimed in claim 1, wherein the first gap between the first portion of the turntable and the inner edge of the opening has no intermediate structure around substantially the entire turntable.

3. The wafer handling apparatus as claimed in claim 1, wherein the one or more radial gas channels have a minimum width of less than 1 mm in a direction parallel to the first axis.

4. The wafer handling apparatus as claimed in claim 1, wherein the one or more radial gas channels have a minimum width of less than 0.5 mm in a direction parallel to the first axis.

5. The wafer handling apparatus as claimed in claim 1, wherein the one or more radial gas channels have a minimum width of less than or equal to 0.25 mm in a direction parallel to the first axis.

6. The wafer handling apparatus as claimed in claim 1, wherein: the one or more radial gas channels are defined at least partially by one or more first surfaces and one or more second surfaces, and the one or more first surfaces face the one or more second surfaces and are separated from the one or more second surfaces by a second gap.

7. The wafer handling apparatus as claimed in claim 6, wherein the one or more first surfaces are perpendicular to the first axis and the one or more second surfaces are perpendicular to the first axis.

8. The wafer handling apparatus as claimed in claim 6, wherein: each of the one or more first surfaces defines a first cross-sectional radial profile relative to a second axis parallel to the first axis and centered on the opening; each of the one or more second surfaces defines a second cross-sectional radial profile relative to the second axis; the cross-sectional radial profiles of the one or more first cross-sectional radial profiles and the one or more second cross-sectional radial profiles are each located in a corresponding plane that coincides with and is parallel to the second axis; each of the first cross-sectional radial profiles is defined as an average first linear radial profile within ±30° perpendicular to the second axis; and each of the second cross-sectional radial profiles is defined as an average second linear radial profile within ±30° perpendicular to the second axis.

9. The wafer handling apparatus of claim 1, further comprising: one or more gas chamber volumes; one or more air inlets; and one or more flow control members configured to regulate airflow to the one or more air inlets, wherein: each of the air inlets is fluidly connected to one of the one or more gas chamber volumes, each of the one or more gas chamber volumes is fluidly connected to at least one of the one or more air inlets, each of the one or more air inlets is fluidly inserted between one of the one or more gas chamber volumes and one of the one or more flow control members, and each of the one or more gas chamber volumes is fluidly inserted between one of the one or more air inlets and the one or more radial gas passages.

10. The wafer handling apparatus of claim 9, further comprising one or more gas sources, wherein: the one or more flow control components are fluidly connected to the one or more gas sources and configured to supply gas from the one or more gas sources to the one or more gas chamber volumes at a rate between 25 and 150 standard liters per minute, and the one or more radial gas passages are sized such that gas from the one or more gas chamber volumes flows out of the one or more radial gas passages at a velocity of at least 5 m / s.

11. The wafer handling apparatus as claimed in claim 1, wherein the first portion of the turntable has a first nominal circular cross-section, and the opening has a corresponding second nominal circular cross-section, the diameter of which is larger than the diameter of the first nominal circular cross-section.

12. The wafer handling apparatus as claimed in claim 1, wherein the one or more radial gas channels comprise only a single gas channel in the form of a radial slit extending around the entire opening without any interruption in continuity.

13. The wafer handling apparatus as claimed in claim 1, wherein the first gap is between 0.5 mm and 5 mm around the turntable.

14. The wafer handling apparatus as claimed in any one of claims 1 to 13, further comprising a bellows, wherein: a first end of the bellows is fixed relative to an end of the turntable located within the base, a second end of the bellows opposite to the first end is fixed relative to a surface of the base on a side of the base opposite to the opening, the bellows unfolds in response to translation of the turntable away from the surface of the base, and the bellows retracts in response to translation of the turntable toward the surface of the base.

15. The wafer handling apparatus as claimed in claim 14, wherein: when viewed along the first axis, the bellows has a first average closed cross-sectional area, and when viewed along the first axis, the outermost surface or a plurality of surfaces of the first portion of the turntable defines a second average cross-sectional area, and the first average closed cross-sectional area is substantially equal to the second average cross-sectional area.

16. The wafer handling apparatus as claimed in claim 14, wherein: the first part of the turntable is nominally circular and has a first nominal diameter, the bellows has a plurality of pleats, each of the pleats having an inner diameter and an outer diameter, and the average value of the inner diameter and the outer diameter of the pleats is substantially equal to the first nominal diameter.

17. The wafer handling apparatus as claimed in claim 14, wherein the base has one or more vents located on the surface of the base, and the one or more vents are located within the area surrounded by the bellows when viewed along the first axis.

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