Plasma processing method and plasma processing apparatus

Abstract

The objective of this invention is to provide a technique for improving the temperature controllability of a substrate mounted on a substrate support. The solution of this invention is a plasma processing method, which is a plasma processing method performed using a plasma processing apparatus. This plasma processing apparatus includes: a base, a substrate support having a substrate support surface for supporting the substrate, a heater for adjusting the temperature of the substrate support surface, a temperature sensor for measuring the temperature of the substrate support surface, a power adjustment unit for adjusting the power supplied to the heater, and a control unit. The plasma processing method of this invention includes: a step of setting a set temperature of the substrate support surface to a first temperature; a step of the power adjustment unit measuring the first power supplied to the heater before plasma generation; a step of the power adjustment unit measuring the second power supplied to the heater after plasma generation; a step of calculating the heat input from the plasma based on the first power and the second power; and a step of correcting the first temperature to a second temperature based on the calculated heat input and the thermal resistance between the substrate support and the temperature sensor.

Description

[Technical Field]

[0001] This invention relates to a plasma treatment method and a plasma treatment apparatus. [Previous Technology]

[0002] Patent Document 1 discloses a mounting platform having a support member and a base. The support member has: a mounting area having a heater, and an outer peripheral area surrounding the mounting area. According to Patent Document 1, a plurality of heaters are also arranged in the mounting area, and each heater is supplied with individually adjustable power, thereby allowing individual adjustment of the temperature of a plurality of partial areas of the mounting area. [Prior Art Documents] [Patent Documents]

[0003] [Patent Document 1] Japanese Patent Application Publication No. 2016-001688 [Summary of the Invention]

[0004] [The problem the invention aims to solve]

[0005] This invention provides a technique for improving the temperature control of a substrate held in a substrate support portion. [Technical Means for Solving the Problem]

[0006] According to one aspect of the present invention, a plasma processing method is provided, which is performed using a plasma processing apparatus comprising: a base; a substrate support portion disposed on the base and having a substrate support surface for supporting a substrate; a heater disposed inside the substrate support portion and capable of adjusting the temperature of the substrate support surface; a temperature sensor for measuring the temperature of the substrate support surface; and a power adjustment portion for adjusting the power supplied to the heater; and the plasma processing method includes: a step of setting a set temperature of the substrate support surface to a first temperature; a step of supplying power from the power adjustment portion to the heater; and a step of processing the plasma... Before plasma generation, when the temperature of the substrate support surface measured by the temperature sensor is the first temperature and remains stable, the power adjustment unit measures the first power supplied to the heater; after plasma generation, when the temperature of the substrate support surface measured by the temperature sensor is the first temperature and remains stable, the power adjustment unit measures the second power supplied to the heater; based on the first power and the second power, the heat input from the plasma is calculated; and based on the calculated heat input and the thermal resistance between the substrate support and the temperature sensor, the first temperature is corrected to the second temperature. [Effects of the Invention]

[0007] The present invention provides a technique for improving the temperature control of a substrate held in a substrate support portion.

Implementation Method

[0009] Hereinafter, the configuration for implementing the present invention will be described with reference to the drawings. Furthermore, in this specification and the drawings, substantially identical components are labeled with the same symbols, thereby omitting redundant descriptions. Furthermore, for ease of understanding, there are instances where the scaled-down versions of the parts in the drawings differ from the actual proportions.

[0010] For parallel, right-angled, orthogonal, horizontal, vertical, up-down, left-right, and other directions, deviations in the degree of effect of the implementation method without loss are permissible. The shape of the corner is not limited to a right angle, but may also be an arc shape with a curve. Parallel, right-angled, orthogonal, horizontal, and vertical may also include approximately parallel, approximately right-angled, approximately orthogonal, approximately horizontal, and approximately vertical.

[0011] Hereinafter, FIG1 will be used to describe an example of the configuration of the plasma processing apparatus.

[0012] The capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply unit 20, a power supply 30, and an exhaust system 40. Furthermore, the plasma processing apparatus 1 includes a substrate support 11 and a gas introduction unit. The gas introduction unit is configured to introduce at least one processing gas into the plasma processing chamber 10. The gas introduction unit includes a cluster nozzle 13. The substrate support 11 is disposed within the plasma processing chamber 10. The cluster nozzle 13 is disposed above the substrate support 11. In one embodiment, the cluster nozzle 13 constitutes at least a portion of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the cluster nozzle 13, the sidewall 10a of the plasma processing chamber 10, and the substrate support 11. The plasma processing chamber 10 has at least one gas supply port for supplying at least one type of processing gas to the plasma processing space 10s, and at least one gas outlet for discharging gas from the plasma processing space. The sidewall 10a is grounded. The cluster head 13 and the substrate support 11 are electrically insulated from the housing of the plasma processing chamber 10.

[0013] The substrate support 11 includes a body portion 111 and an annular component 112. The body portion 111 has a central region (substrate support surface) 111a for supporting a substrate (wafer) W, and an annular region (annular support surface) 111b for supporting the annular component 112. The annular region 111b of the body portion 111 surrounds the central region 111a of the body portion 111 when viewed from above. The substrate W is disposed on the central region 111a of the body portion 111, and the annular component 112 is disposed on the annular region 111b of the body portion 111 in such a way that it surrounds the substrate W on the central region 111a of the body portion 111. In one embodiment, the body portion 111 includes a base 115 and a substrate support portion 116. The substrate support portion 116 is, for example, an electrostatic chuck including a dielectric body and electrodes disposed within the body. Alternatively, the substrate support portion 116 can be configured as an annular support portion for holding the annular assembly 112. The substrate support portion 116 is fixed to the base 115 through an adhesive layer 117. The base 115 includes conductive members. The conductive members of the base 115 function as lower electrodes. The substrate support portion 116 is disposed on the base 115. The upper surface of the substrate support portion 116 has a substrate support surface 111a. The substrate support portion 116 includes a heater 118 (see Figure 2) internally for adjusting the temperature of the substrate support surface 111a. The annular assembly 112 includes one or more annular members. At least one of the one or more annular members is an edge ring. Also, although not shown in the figure, the substrate support 11 may also include a temperature control module configured to adjust at least one of the substrate support portion 116, the annular assembly 112, and the substrate to a target temperature. The temperature control module may include a heater, a heat transfer medium, a flow path, or a combination thereof. A heat transfer fluid such as brine or gas flows in the flow path. Furthermore, the substrate support 11 may also include a heat transfer gas supply section configured to supply heat transfer gas between the back surface of the substrate W and the substrate support surface 111a. The substrate support 11 has a temperature sensor 150 for measuring the temperature of the substrate support surface 111a on the side of the substrate support section 116 closer to the base 115 than the heater 118. Furthermore, although the substrate support section 116 is integrated with the substrate support surface 111a and the annular support surface 111b, it may also be configured to have a separate substrate support section having the substrate support surface 111a and an annular support section having the annular support surface 111b.

[0014] The cluster injector 13 is configured to introduce at least one type of processing gas from the gas supply unit 20 into the plasma processing space 10s. The cluster injector 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and a plurality of gas inlets 13c. The processing gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space 10s through the plurality of gas inlets 13c. Furthermore, the cluster injector 13 includes a conductive member. The conductive member of the cluster injector 13 functions as an upper electrode. In addition to the cluster injector 13, the gas inlet may also include one or more side gas injectors (SGIs) installed in one or more openings formed in the sidewall 10a.

[0015] The gas supply unit 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one type of processing gas from corresponding gas sources 21 to the nozzle 13 via corresponding flow controllers 22. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Furthermore, the gas supply unit 20 may also include one or more flow modulation devices for modulating or pulsed flow of the at least one type of processing gas.

[0016] The power supply 30 includes an RF (Radio Frequency) power supply 31 connected to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power supply 31 is configured to supply at least one RF signal (RF power), such as a source RF signal and a bias RF signal, to the conductive members of the substrate support 11 and / or the conductive members of the cluster head 13. Plasma is thus formed from at least one processing gas supplied to the plasma processing space 10s. Therefore, the RF power supply 31 can function as at least part of a plasma generation unit configured to generate plasma from one or more processing gases in the plasma processing chamber 10. Furthermore, by supplying a bias RF signal to the conductive members of the substrate support 11, a bias potential can be generated on the substrate W, thereby feeding the ionic components of the formed plasma into the substrate W.

[0017] In one embodiment, the RF power supply 31 includes a first RF generating unit 31a and a second RF generating unit 31b. The first RF generating unit 31a is configured to be connected to a conductive member of the substrate support 11 and / or a conductive member of the cluster head 13 via at least one impedance matching circuit, and generates a source RF signal (source RF power) for plasma generation. In one embodiment, the source RF signal has a frequency in the range of 13 MHz to 150 MHz. In one embodiment, the first RF generating unit 31a may also be configured to generate a plurality of source RF signals with different frequencies. The generated one or more source RF signals are supplied to the conductive member of the substrate support 11 and / or the conductive member of the cluster head 13. The second RF generating unit 31b is configured to be connected to a conductive member of the substrate support 11 via at least one impedance matching circuit, and generates a bias RF signal (bias RF power). In one embodiment, the bias RF signal has a frequency lower than that of the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 400 kHz to 13.56 MHz. In another embodiment, the second RF generation unit 31b may also be configured to generate a plurality of bias RF signals with different frequencies. One or more bias RF signals generated are supplied to the conductive members of the substrate support 11. Furthermore, in various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0018] Furthermore, the power supply 30 may also include a DC (Direct Current) power supply 32 connected to the plasma processing chamber 10. The DC power supply 32 includes a first DC generating unit 32a and a second DC generating unit 32b. In one embodiment, the first DC generating unit 32a is configured to be connected to a conductive member of the substrate support 11 and generates a first DC signal. The generated first bias DC signal is applied to the conductive member of the substrate support 11. In one embodiment, the first DC signal may also be applied to other electrodes, such as electrodes within the substrate support 116. In one embodiment, the second DC generating unit 32b is configured to be connected to a conductive member of the cluster head 13 and generates a second DC signal. The generated second DC signal is applied to the conductive member of the cluster head 13. In various embodiments, at least one of the first DC signal and the second DC signal may also be pulsed. Furthermore, in addition to the RF power supply 31, a first DC generating unit 32a and a second DC generating unit 32b may also be provided, or the first DC generating unit 32a may be provided to replace the second RF generating unit 31b.

[0019] The exhaust system 40 may be connected, for example, to a gas outlet 10e located at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure regulating valve may be used to adjust the pressure within the plasma processing space 10s. The vacuum pump may include a turbomolecular pump, a dry vacuum pump, or a combination thereof.

[0020] The plasma processing apparatus 1 includes a control unit 2. The control unit 2 processes computer-executable commands that cause the plasma processing apparatus 1 to perform the various steps described herein. The control unit 2 may be configured to control the components of the plasma processing apparatus 1 to perform the various steps described herein. The control unit 2 may include, for example, a computer 2a. The computer 2a may include, for example, a processing unit (CPU) 2a1, a memory unit 2a2, and a communication interface 2a3. The processing unit 2a1 may be configured to perform various control actions based on a program stored in the memory unit 2a2. The memory unit 2a2 may include RAM (Random Access Memory), ROM (Read Only Memory), HDD (Hard Disk Drive), SSD (Solid State Drive), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing apparatus 1 via a communication line such as a LAN (Local Area Network).

[0021] <Plasma Processing Method of This Embodiment> The plasma processing method of this embodiment will be described. FIG2 is a diagram illustrating the processing of the plasma processing apparatus 1 of this embodiment. Specifically, FIG2 shows a partial cross-section of the substrate support 11 of the plasma processing apparatus 1.

[0022] The substrate support 11 includes a base 115 and a substrate support portion 116. The substrate support portion 116 is mounted on the base 115 through an adhesive layer 117.

[0023] The base 115 includes a base body 115a formed of metal and a flow path 115c disposed inside the base body 115a. A refrigerant such as brine, adjusted to a set temperature, flows in the flow path 115c.

[0024] The base 115 is adjusted to a set temperature by heat exchange with the refrigerant flowing through the flow path 115c. Furthermore, the substrate support 116 mounted on the base 115 is cooled by the base 115.

[0025] The substrate support portion 116 has a heater 118 inside. The heater 118 heats the substrate placed on the substrate support surface 111a.

[0026] The substrate support 11 includes a temperature sensor 150. The temperature sensor 150 may be configured to be closer to the base 115 than the heater 118. The temperature sensor 150 measures the temperature of the substrate support surface 111a.

[0027] The heater 118 and the temperature sensor 150 are connected to the power adjustment unit 200. The power adjustment unit 200 adjusts the power supplied to the heater 118 so that the temperature detected by the temperature sensor 150 reaches the set temperature Tset set by the control unit 2. The power adjustment unit 200 controls the power supplied to the heater 118, for example, by using PID (Proportional-Integral-Differential) control so that the temperature detected by the temperature sensor 150 reaches the set temperature Tset.

[0028] Here, the flow of heat in the plasma processing apparatus 1 when no plasma is generated and when plasma is generated will be explained.

[0029] Figure 3 is a diagram illustrating the heat flow direction in the state where no plasma is generated, for the plasma processing apparatus 1 of this embodiment. Figure 4 is a diagram illustrating the heat flow direction in the state where plasma is generated, for the plasma processing apparatus 1 of this embodiment.

[0030] Figures 3 and 4 are diagrams that model the heat flow direction from the surface Se (substrate support surface 111a) of the substrate support portion 116 to the surface Sc of the flow path 115c.

[0031] It is configured such that, between the surface Se of the substrate support portion 116 and the surface Sc of the flow path 115c, there are: a thermal resistance Rsh between the surface Se and the heater 118, a thermal resistance Rht between the heater 118 and the temperature sensor 150, and a thermal resistance Rtc between the temperature sensor 150 and the flow path 115c. Furthermore, the temperature of the surface Se is set as temperature Ts, the temperature of the heater 118 is set as temperature Th, the temperature of the temperature sensor 150 is set as temperature Tt, and the temperature of the flow path 115c, i.e., the temperature of the refrigerant flowing through the flow path 115c, is set as temperature Tc.

[0032] Furthermore, the thermal resistances Rsh, Rht, and Rtc are known by design or measured values.

[0033] Since it is assumed that the heat capacity of the refrigerant in flow path 115c is sufficiently large, it can be assumed that even if the heat absorbed from the heater 118 is absorbed, the temperature Tc is fixed.

[0034] When thermal equilibrium is reached in the state without plasma generation as shown in Figure 3, the temperature Ts of surface Se and the temperature Th of heater 118 become equal. At this time, the power adjustment unit 200 adjusts the power supplied to heater 118 so that the temperature Tt of temperature sensor 150 reaches the set temperature.

[0035] The heat Qhtr1 supplied by the heater 118 flows out from the surface Sc to the refrigerant through the thermal resistances Rht and Rtc.

[0036] On the other hand, in the plasma-generated state shown in FIG4, heat Qrf flows in from surface Se. Heat Qrf passes sequentially through thermal resistances Rsh, Rht, and Rtc and flows out from surface Sc. Furthermore, the power adjustment unit 200 adjusts the power supplied to the heater 118 so that the temperature Tt of the temperature sensor 150 reaches the set temperature.

[0037] If the set temperature of the temperature sensor 150 is set to the same temperature Tt in both the state without plasma generation and the state with plasma generation, then the amount of heat Qrf flowing from the plasma will be such that the amount of heat Qhtr2 is much smaller than the amount of heat Qhtr1. That is, the amount of heat Qhtr2 is expressed as Equation 1.

[0038] [Number 1]…(Equation 1)

[0039] In the state of plasma generation, a temperature difference ΔT (Kelvin) as shown in Equation 2 is generated between the temperature Ts of the surface Se and the temperature Tt of the temperature sensor 150.

[0040] [Number 2]…(Equation 2) Furthermore, in Equation 2, for example, the heat Qrf is set as Qrf (Watt), the heat Qhrt2 is set as Qhrt2 (Watt), the thermal resistance Rht is set as Rht (Klvin / Watt), and the thermal resistance Rsh is set as Rsh (Klvin / Watt).

[0041] Furthermore, in the absence of plasma, a temperature difference ΔT0 (Kelvin) as shown in Equation 3 is generated between the temperature Ts of the surface Se and the temperature Tt of the temperature sensor 150. However, since the thermal resistance Rht and the heat Qhtr1 are known, the temperature difference ΔT0 can be corrected.

[0042] [Number 3]…(Equation 3) Furthermore, in Equation 3, for example, the heat Qhrt1 is set as Qhrt1 (watts) and the thermal resistance Rht is set as Rht (kelvin / watts).

[0043] In the plasma processing method of this embodiment, when plasma is generated, the power supplied to the heater 118 is modified so that the surface Se temperature reaches the required temperature.

[0044] Figure 5 is a flowchart illustrating the plasma processing method of the plasma processing apparatus 1 according to this embodiment. Furthermore, in the initial processing stage, it is assumed that no plasma is generated.

[0045] First, the control unit 2 sets the set temperature Tset of the power adjustment unit 200, that is, the set temperature Tset of the substrate support surface 111a, to the first temperature T1 (step S10). Then, the control unit 2 controls the power adjustment unit 200 to supply power to the heater 118 (step S20). After supplying power to the heater 118 from the power adjustment unit 200, the control unit 2 waits until the measured temperature obtained by the temperature sensor 150 is stably at the set temperature Tset, that is, the first temperature T1.

[0046] Furthermore, the determination that the temperature measured by the temperature sensor 150 reaches the first temperature T1 is not limited to the case where the temperature measured by the temperature sensor 150 is completely consistent with the first temperature T1, but also includes, for example, the case where the temperature measured by the temperature sensor 150 is within the control range including the first temperature T1.

[0047] When the measured temperature obtained by the temperature sensor 150 is stably at the first temperature T1, the control unit 2 controls the power adjustment unit 200, and the power adjustment unit 200 measures the first power P1 supplied to the heater 118 (step S30). Furthermore, steps S10, S20 and S30 are performed in a state where plasma has not been generated, that is, before plasma is generated.

[0048] Next, the control unit 2 supplies processing gas from the gas supply unit 20 and RF power from the power supply 30, that is, controls the plasma generation unit to generate plasma (step S40). Then, after the plasma generation begins, the control unit 2 waits until the temperature measured by the temperature sensor 150 is stably at the first temperature T1. When the measured temperature obtained by the temperature sensor 150 is stably at the first temperature T1, the control unit 2 controls the power adjustment unit 200, and the power adjustment unit 200 measures the second power P2 supplied to the heater 118 (step S50). Furthermore, step S50 is performed while the plasma is being generated, that is, after the plasma is generated.

[0049] Next, the control unit 2 calculates the heat input amount Qin from the plasma per unit time under the state of plasma generation based on the first power P1 and the second power P2 (step S60). If the heat generated by the heater 118 per unit time when the first power P1 is supplied to the heater 118 is defined as heat Q1, and the heat generated by the heater 118 per unit time when the second power P2 is supplied to the heater 118 is defined as heat Q2, then the heat input amount Qin is expressed as Equation 4.

[0050] [Number 4]…(Equation 4)

[0051] The calculation method for the power of heater 118 will be explained. For example, the power adjustment unit 200 controls the power of heater 118 by means of PWM (Pulse Width Modulation) control. First, the case where the power adjustment unit 200 supplies DC voltage to heater 118 will be explained. If the heater resistance of heater 118 is set to Rhtr (Ohm), the DC voltage when power is supplied from the power adjustment unit 200 is set to Vsup (Volt), the duty cycle when performing PWM control is set to p (%), and the heat output per unit time from heater 118 is set to Phtr (watt), then the power output from heater 118 is expressed as Equation 5.

[0052] [Number 5]…(Equation 5)

[0053] The amount of heat generated per unit time by the heater 118 is calculated using the power calculated by Equation 5.

[0054] Next, the situation where the power adjustment unit 200 supplies AC voltage to the heater 118 will be explained. If the heater resistance of the heater 118 is set to Rhtr (ohms), the amplitude of the AC voltage when power is supplied from the power adjustment unit 200 is set to Vsup2 (volts), the duty cycle when performing PWM control is set to p (%), and the heat output per unit time from the heater 118 is set to Phtr (watts), then the power output from the heater 118 is expressed as Equation 6. Furthermore, cosθ represents the power factor.

[0055] [Number 6]…(Equation 6)

[0056] The amount of heat generated per unit time by the heater 118 is calculated using the power calculated by Equation 6.

[0057] Furthermore, if the set temperature Tset before correction is set as Tset1 (°C) and the set temperature Tset after correction is set as Tset2 (°C), then the set temperature Tset2 is expressed as Equation 7.

[0058] [Number 7]…(Equation 7) Furthermore, in Equation 7, for example, the heat Q1 is set as Q1 (watt), the heat input Qin is set as Qin (watt), the thermal resistance Rht is set as Rht (kelvin / watt), and the thermal resistance Rsh is set as Rsh (kelvin / watt).

[0059] Furthermore, the thermal resistance Rsh between the surface Se of the substrate support portion 116 and the heater 118 and the thermal resistance Rht between the heater 118 and the temperature sensor 150 are examples of the thermal resistance between the substrate support portion 116 and the temperature sensor 150.

[0060] Furthermore, when it is desired to control the temperature of the wafer placed on the substrate support surface 111a, if the thermal resistance of the wafer is set to Rw (kelvin / watt), the contact thermal resistance between the wafer and the substrate support surface 111a is set to Rcon (kelvin / watt), and the modified set temperature Tset is set to Tsetw (°C), then the set temperature Tsetw is expressed as Equation 8.

[0061] [Equation 8]…(Equation 8) Furthermore, in Equation 8, for example, the heat Q1 is set as Q1 (watt), the heat input Qin is set as Qin (watt), the thermal resistance Rht is set as Rht (kelvin / watt), and the thermal resistance Rsh is set as Rsh (kelvin / watt).

[0062] Furthermore, the thermal resistance Rsh between the surface Se of the substrate support portion 116 and the heater 118, the thermal resistance Rw of the wafer, the contact thermal resistance Rcon between the wafer and the substrate support surface 111a, and the thermal resistance Rht between the heater 118 and the temperature sensor 150 are examples of the thermal resistance between the substrate W and the temperature sensor 150.

[0063] Furthermore, the substrate support surface 111a has been described above. By also performing the same treatment on the annular region (annular support surface) 111b of the annular member supporting the annular component 112, the temperature of the annular member of the annular component 112 can be adjusted to the required temperature.

[0064] For example, the annular region 111b of the main body 111 may include: a heater (second heater) and a power adjustment unit (second power adjustment unit) that supplies power to the heater (second heater), and a temperature sensor (second temperature sensor) that measures the temperature of the annular support surface 111b.

[0065] Furthermore, since the number of heaters 118 and temperature sensors 150 in the substrate support portion 116 was not mentioned in the above description, there may be a plurality of heaters 118 and temperature sensors 150. That is, the substrate support portion 116 may also be configured to have a plurality of regions, and each of the plurality of regions may have a heater 118 and a temperature sensor 150. Similarly, when the second heater is provided in the annular region 111b of the body portion 111, the annular region 111b may also be configured to have a plurality of regions, and each of the plurality of regions may have a second temperature sensor.

[0066] <Function and Effect> The plasma processing apparatus 1 according to the present invention can improve the temperature control of a substrate placed on a substrate support while plasma is generated.

[0067] It should be considered that the plasma treatment method and plasma treatment apparatus of this embodiment disclosed herein are illustrative in all respects and are not restrictive. The above embodiments can be varied and modified in various forms without departing from the scope and spirit of the appended patent applications. The matters described in the above plurality of embodiments can also be adopted in other configurations and can be combined within the scope of non-contradiction. [Simplified Explanation of the Diagram]

[0008] Figure 1 is a diagram illustrating an example of the configuration of the plasma treatment apparatus of this embodiment. Figure 2 is a diagram illustrating the processing of the plasma treatment apparatus of this embodiment. Figure 3 is a diagram illustrating the heat flow direction in the state where no plasma is generated, for the plasma treatment apparatus of this embodiment. Figure 4 is a diagram illustrating the heat flow direction in the state where plasma is generated, for the plasma treatment apparatus of this embodiment. Figure 5 is a flowchart illustrating the plasma treatment method of the plasma treatment apparatus of this embodiment.

Claims

1. A plasma processing method performed using a plasma processing apparatus, the plasma processing apparatus comprising: a base; a substrate support portion disposed on the base and having a substrate support surface for supporting a substrate; a heater disposed inside the substrate support portion and capable of adjusting the temperature of the substrate support surface; a temperature sensor for measuring the temperature of the substrate support surface; and a power adjustment portion for adjusting the power supplied to the heater; and the plasma processing method comprising: The steps include: setting the temperature of the substrate support surface to a first temperature; supplying power from the power adjustment unit to the heater; determining the first power supplied to the heater by the power adjustment unit when the temperature of the substrate support surface measured by the temperature sensor before plasma generation is the first temperature and is stable; determining the second power supplied to the heater by the power adjustment unit when the temperature of the substrate support surface measured by the temperature sensor after plasma generation is the first temperature and is stable; calculating the heat input from the plasma based on the first power and the second power; and correcting the first temperature to the second temperature based on the calculated heat input and the thermal resistance between the substrate support unit or the substrate and the temperature sensor.

2. The plasma processing method of claim 1, wherein the substrate support portion includes a dielectric body and electrodes disposed within the dielectric body.

3. The plasma processing method of claim 1 or 2, wherein the temperature sensor is disposed on the side closer to the base than the heater.

4. The plasma processing method of claim 1 or 2, wherein the substrate support portion has a plurality of regions, and each of the plurality of regions is provided with the heater.

5. The plasma processing method of claim 4, wherein each of the plurality of regions further comprises the temperature sensor described above.

6. The plasma processing method of claim 1 or 2, wherein the power adjustment unit adjusts the power supplied to the heater so that the temperature measured by the temperature sensor reaches the set temperature.

7. The plasma processing method according to claim 1 or 2, comprising: an annular support portion disposed on the aforementioned base and having an annular support surface supporting an annular member; a second heater for adjusting the temperature of the annular member; a second temperature sensor for measuring the temperature of the annular support surface; and a second power adjustment portion for adjusting the power supplied to the second heater; and further comprising: The steps are as follows: setting the temperature of the annular support surface to a third temperature; supplying power from the second power adjustment unit to the second heater; determining the third power supplied to the second heater by the second power adjustment unit when the temperature of the annular support surface measured by the second temperature sensor before the generation of the plasma is the third temperature and is stable; determining the fourth power supplied to the second heater by the second power adjustment unit when the temperature of the annular support surface measured by the second temperature sensor after the generation of the plasma is the third temperature and is stable; calculating the heat input from the plasma based on the third power and the fourth power; and correcting the third temperature to the fourth temperature based on the calculated heat input and the thermal resistance between the annular support unit or the annular member and the temperature sensor.

8. The plasma processing method of claim 7, wherein the annular support portion is disposed separately from the substrate support portion.

9. The plasma processing method of claim 7, wherein the second temperature sensor is disposed closer to the base than the second heater.

10. The plasma processing method of claim 7, wherein the annular support portion has a plurality of regions, and the second heater is provided in each of the plurality of regions.

11. A plasma treatment method performed using a plasma treatment apparatus, the plasma treatment apparatus comprising: a base; an annular support portion disposed on the base and having an annular support surface for supporting an annular member; a second heater for adjusting the temperature of the annular member; a second temperature sensor for measuring the temperature of the annular support surface; and a second power adjustment portion for adjusting the power supplied to the second heater; and the plasma treatment method comprising: The steps are as follows: setting the temperature of the annular support surface to a third temperature; supplying power from the second power adjustment unit to the second heater; determining the third power supplied to the second heater by the second power adjustment unit when the temperature of the annular support surface measured by the second temperature sensor before plasma generation is the third temperature and is stable; determining the fourth power supplied to the second heater by the second power adjustment unit when the temperature of the annular support surface measured by the second temperature sensor after plasma generation is the third temperature and is stable; calculating the heat input from the plasma based on the third power and the fourth power; and correcting the third temperature to the fourth temperature based on the calculated heat input and the thermal resistance between the annular support unit or the annular member and the second temperature sensor.

12. The plasma processing method of claim 11, wherein the second temperature sensor is disposed on the side closer to the base than the second heater.

13. The plasma processing method of claim 11 or 12, wherein the annular support portion has a plurality of regions, and the second heater is provided in each of the plurality of regions.

14. The plasma processing method of claim 13, wherein each of the plurality of regions further comprises the second temperature sensor.

15. A plasma processing apparatus comprising: a base; a substrate support portion disposed on the base portion and having a substrate support surface for supporting a substrate; a heater disposed within the substrate support portion and capable of adjusting the temperature of the substrate support surface; a temperature sensor for measuring the temperature of the substrate support surface; a power adjustment portion for adjusting the power supplied to the heater; a plasma generating portion for generating plasma; and a control portion, wherein the control portion performs: a step of setting a set temperature of the substrate support surface to a first temperature; a step of causing the power adjustment portion to supply power to the heater; a step of causing the power adjustment portion to measure the first power supplied to the heater when the temperature of the substrate support surface measured by the temperature sensor is the first temperature and is stable before plasma generation; and a step of causing the power adjustment portion to measure the second power supplied to the heater when the temperature of the substrate support surface measured by the temperature sensor is the first temperature and is stable after plasma generation. The steps of calculating the heat input from the plasma based on the first power and the second power; and the steps of correcting the first temperature to the second temperature based on the calculated heat input and the thermal resistance between the substrate support or the substrate and the temperature sensor.

16. The plasma processing apparatus of claim 15, wherein the temperature sensor is disposed on the side closer to the base than the heater.

Images