Photosensitive resin composition, cured film pattern, and manufacturing method thereof

Abstract

A photosensitive resin composition exhibiting excellent tensile strength, fracture resistance, and chemical resistance; a hardened film pattern formed using the photosensitive resin composition; and a method for manufacturing the same. The photosensitive resin composition comprises: a polyimide precursor (A) containing vinyl unsaturated groups, a compound (B) containing vinyl unsaturated groups, a photoinitiator (C), a solvent (D), and an organosilicone compound (E). The polyimide precursor (A) comprises structural units as shown in formula (A-0). The organosilicone compound (E) comprises a structure having a structure as shown in formula (E1). .

Description

Photosensitive resin composition, cured film pattern and method for producing the same The present invention relates to a photosensitive resin composition, and more particularly to a photosensitive resin composition having excellent breaking strength, crack resistance and chemical resistance, a hardened film pattern and a manufacturing method thereof. In recent years, highly heat-resistant organic materials such as polyimide resins have been widely used as protective film materials for large-scale integrated circuits (LSIs) used in semiconductor integrated circuits (e.g., Patent Documents 1 and 2). Protective films (cured films) using such polyimide resins are obtained by applying a polyimide precursor or a resin composition containing a polyimide precursor onto a substrate, drying it, and then heating and curing the resulting resin film. With the miniaturization of semiconductor integrated circuits, in order to reduce the dielectric constant, it is necessary to use an interlayer insulating film called a low dielectric constant (low-k) layer. Since the low-k layer has a hollow structure, there is a problem of low mechanical strength. In order to protect this interlayer insulating film with low mechanical strength, a hardened film formed by a polyimide resin is used. Such a hardened film requires properties such as thick film formability (for example, more than 5 μm) and a high elastic modulus (for example, more than 4 GPa). However, due to the thickening and high elastic modulus of the film, the stress after hardening increases, which in turn increases the warping of the semiconductor wafer, which may cause problems during transportation and wafer fixing. Therefore, it is necessary to develop a low-stress hardened film. Methods for reducing stress in polyimide resins include, for example, designing the molecular chain into a rigid skeleton to bring the thermal expansion coefficient of polyimide close to that of a silicon wafer (Patent Document 3), and reducing the elastic modulus of polyimide by introducing a flexible structure such as a siloxane structure (Patent Document 4). On the other hand, if the polyimide resin composition used to form the protective film is photosensitive, a patterned resin film can be easily formed. By heat-curing the patterned resin film, a patterned cured film can be easily formed. Methods for imparting photosensitivity to polyimide resin compositions include methods for imparting photosensitivity to polyimides, such as methods of introducing (meth)acrylic groups into polyimide precursors via ester or ionic bonds, methods using soluble polyimides containing photopolymerizable olefins, and methods using self-sensitizing polyimides having a benzophenone skeleton and an alkyl group ortho to the aromatic ring bonded to a nitrogen atom (Patent Document 5). Among these, methods of introducing methacryl groups into polyimide precursors via ester bonds allow for free selection of monomers used in synthesizing the polyimide precursor, and since the methacryl groups are introduced via chemical bonds, they exhibit excellent stability over time. However, in low-stress polyimide resins, since they contain a large number of conjugated aromatic ring units in the molecular chain, even in the case of polyamide acid as a precursor of the polyimide resin, absorption occurs in the ultraviolet region. Therefore, the transmittance of the i-line (wavelength 365 nm) widely used in the exposure step of forming a patterned resin film is reduced, which in turn leads to a trend of reduced sensitivity and resolution. In other words, it is difficult to simultaneously achieve both increasing the i-line transmittance and reducing the stress of the cured film. In addition, if the obtained protective film is thickened, there is a tendency that the i-line transmittance is further reduced, which leads to the inability to form a patterned resin film. During the manufacturing process, when forming a patterned resin film, it must have excellent fracture strength. In addition, high reliability is also required, so crack resistance and chemical resistance are also required. [Prior Art Documents] [Patent Document 1] Japanese Patent No. 3526829 [Patent Document 2] Japanese Patent No. 4524808 [Patent Document 3] Japanese Patent Application Laid-Open No. 5-295115 [Patent Document 4] Japanese Patent Application Laid-Open No. 7-304950 [Patent Document 5] Japanese Patent Application Laid-Open No. 7-242744 In view of the above, an object of the present invention is to provide a photosensitive resin composition having excellent breaking strength, crack resistance and chemical resistance, a cured film pattern using the photosensitive resin composition and a method for manufacturing the same. The present invention provides a photosensitive resin composition comprising: a polyimide precursor (A) containing an ethylenically unsaturated group, a compound (B) containing an ethylenically unsaturated group, a photoinitiator (C), a solvent (D), and an organosilicon compound (E). The polyimide precursor (A) comprises a structural unit represented by the following formula (A-0). The organosilicon compound (E) comprises a structure represented by the following formula (E1). Formula (A-0) In formula (A-0), R 1 represents a tetravalent organic group; R 2 represents a divalent organic group; A 1. A 2 Each independently represents OR 3 or a monovalent organic group containing an ethylenically unsaturated group, and A 1. A 2 is a monovalent organic group containing an ethylenically unsaturated group; 3 represents a hydrogen atom, an alkyl group having 1 to 20 carbon atoms, or a cycloalkyl group having 3 to 20 carbon atoms. Formula (E1): In formula (E1), Y represents an acryl group or a (meth)acryl group; X represents a hydrogen atom or a monovalent hydrocarbon group which may have a substituent, wherein -CH 2- may be substituted by -O-, -S-, -N- or -CO-; L represents a divalent hydrocarbon group which may have a substituent, and the -CH 2- may be substituted by -O-, -S-, -N- or -CO-; W represents a divalent hydrocarbon group which may have a substituent, and -CH 2- may be substituted by -O-, -S-, -N- or -CO-. In one embodiment of the present invention, in the above-mentioned photosensitive resin composition of formula (A-0), the monovalent organic group containing an ethylenically unsaturated group includes at least one selected from the group consisting of the structures represented by the following formulas (A3-1), (A3-2), and (A3-3): Formula (A3-1) Formula (A3-2) Formula (A3-3) In formula (A3-1), formula (A3-2) and formula (A3-3), L 1. L 2 represents a divalent linear or branched alkyl group having 1 to 12 carbon atoms, a divalent cycloalkyl group having 3 to 12 carbon atoms, or a divalent aromatic ring group having 3 to 12 carbon atoms; L 3 represents a single bond, a divalent straight-chain or branched alkyl group having 1 to 12 carbon atoms; L 4 represents a hydrogen atom or L 3 bonds to form a divalent alicyclic group with 3 to 12 carbon atoms; R 0 represents a hydrogen atom or a methyl group. In one embodiment of the present invention, the polyimide precursor (A) is prepared from the polyimide precursor (A 0) is obtained by reacting with an unsaturated compound (a-3) containing a crosslinkable group. In one embodiment of the present invention, the polyimide precursor (A 0) is obtained by reacting a mixture of a tetracarboxylic dianhydride compound (a-1) and a diamine compound (a-2). In one embodiment of the present invention, the tetracarboxylic dianhydride compound (a-1) includes a tetracarboxylic dianhydride compound (a-1-1), wherein the tetracarboxylic dianhydride compound (a-1-1) includes at least one selected from the group consisting of compounds represented by the following formula (A1-1), formula (A1-2), and formula (A1-3). Formula (A1-1) Formula (A1-2) Formula (A1-3) In formula (A1-3), k R 8 each independently represents a hydrogen atom, an alkyl group having 1 to 6 carbon atoms, or a monocyclic or condensed aromatic group having 6 to 14 carbon atoms; and k represents 1 or 2. In one embodiment of the present invention, the diamine compound (a-2) includes a diamine compound (a-2-1) having a structure as shown in the following formula (A2-1): Formula (A2-1): In formula (A2-1), R 9. R 10 、R 11 、R 12 Each independently represents a monovalent hydrocarbon group, and R 9. R 10 、R 11 、R 12 Each is the same or different; R 13 Each independently represents a divalent hydrocarbon group, and multiple R 13 are the same or different; n represents an integer of 1 to 10. In one embodiment of the present invention, the crosslinkable group-containing unsaturated compound (a-3) includes at least one selected from the group consisting of an isocyanate group-containing unsaturated compound, a hydroxyl group-containing unsaturated compound, and an epoxy group-containing unsaturated compound. In one embodiment of the present invention, the compound (B) containing an ethylenically unsaturated group includes a compound (B-1) having a structure represented by the following formula (B1): Formula (B1) In formula (B1), R 4 represents a divalent straight-chain or branched aliphatic group having 1 to 12 carbon atoms, a divalent alicyclic group having 3 to 12 carbon atoms, a divalent aromatic ring group, or [-(CH 2) g -O-(CH 2) h -] i , wherein g and h each independently represent an integer from 1 to 10; i represents an integer from 1 to 5; R 5 represents a divalent straight-chain or branched aliphatic group having 1 to 10 carbon atoms, a divalent alicyclic group having 3 to 10 carbon atoms, a divalent aromatic ring group, or [-(CH 2) p -O-(CH 2) q -] r , wherein p and q each independently represent an integer from 1 to 10; r represents an integer from 1 to 5; R 6 and R 7 are each independently a hydrogen atom or a methyl group. In one embodiment of the present invention, the organosilicon compound (E) has a structure of the following formula (E2), formula (E3) or formula (E4), Formula (E2) Formula (E3) Formula (E4) In formula (E2), formula (E3) and formula (E4), B is a hydrolyzable group; R 14 Each independently represents an alkyl group having 1 to 4 carbon atoms which may have a substituent; n represents an integer from 1 to 3; Z represents an alkylene group having 1 to 6 carbon atoms which may have a substituent; R 15 is a hydrogen atom or an alkyl group having 1 to 8 carbon atoms which may have a substituent; R 16 、R 19 Each independently represents a structure represented by the following formula (E21) or the following formula (E22); R 17 、R 18 One of them is represented by the following formula (E21) or the following formula (E22); the other is a group represented by the following formula (E21) or the following formula (E22), a hydrogen atom, or an alkyl group having 1 to 8 carbon atoms which may have a substituent, Formula (E21) Formula (E22) In formula (E21) and formula (E22), R 20 and R 21 Each independently represents a hydrogen atom or a methyl group, and m represents an integer of 1 to 4. In one embodiment of the present invention, the organosilicon compound (E) has a structure as shown in Formula (E2). In one embodiment of the present invention, the photosensitive resin composition may further include an azole compound (F), and the azole compound (F) includes at least one selected from the group consisting of tetrazole and its derivatives, and benzotriazole and its derivatives. In one embodiment of the present invention, based on 100 parts by weight of the polyimide precursor (A), the amount of the ethylenically unsaturated group-containing compound (B) is 15 to 100 parts by weight, the amount of the photoinitiator (C) is 0.05 to 5.5 parts by weight, the amount of the solvent (D) is 100 to 800 parts by weight, and the amount of the organosilicon compound (E) is 0.05 to 1.5 parts by weight. In one embodiment of the present invention, based on 100 mol% of the total usage of the tetracarboxylic dianhydride compound (a-1), the usage of the tetracarboxylic dianhydride compound (a-1-1) is 15 mol% to 80 mol%. In one embodiment of the present invention, the amount of the diamine compound (a-2-1) in the photosensitive resin composition is 2 mol% to 25 mol% based on the total amount of the diamine compound (a-2) being 100 mol%. In one embodiment of the present invention, based on 100 mol % of the tetracarboxylic dianhydride compound (a-1), the amount of the crosslinkable group-containing unsaturated compound (a-3) is 25 mol % to 100 mol %. In one embodiment of the present invention, based on 100 parts by weight of the polyimide precursor (A), the amount of the azole compound (F) is 0.25 parts by weight to 3.75 parts by weight. The present invention further provides a cured film pattern formed from the above-mentioned photosensitive resin composition. The present invention further provides a method for manufacturing a hardened film pattern, comprising: a coating step of coating the above-mentioned photosensitive resin composition on a substrate and drying it to form a coating film, a patterning step of exposing and developing the coating film to form a patterned resin film, and a heating step of heating the patterned resin film. Based on the above, since the photosensitive resin composition of the present invention includes a polyimide precursor (A) having specific structural units and a specific organosilicon compound (E), a film formed using this photosensitive resin composition can achieve high breaking strength, good crack resistance, and good chemical resistance. In order to make the above features and advantages of the present invention more clearly understood, embodiments are given below and described in detail. < Photosensitive resin composition A photosensitive resin composition of the present invention comprises at least: a polyimide precursor (A) containing an ethylenically unsaturated group, a compound (B) containing an ethylenically unsaturated group, a photoinitiator (C), a solvent (D), and an organosilicon compound (E). The polyimide precursor (A) containing an ethylenically unsaturated group comprises a structural unit represented by formula (A-0). The organosilicon compound (E) comprises a structure represented by formula (E1). The components of the photosensitive resin composition of the present invention are described in detail below. [ Polyimide precursor containing ethylenically unsaturated groups (A)] The polyimide precursor (A) containing an ethylenically unsaturated group can be prepared from the polyimide precursor (A) 0) and an unsaturated compound (a3) ​​containing a crosslinkable group. 0) is obtained by reacting a mixture of a tetracarboxylic dianhydride compound (a1) and a diamine compound (a2). More specifically, the polyimide precursor (A) containing an ethylenically unsaturated group includes a structural unit represented by formula (A-0). Formula (A-0) In formula (A-0), R 1 represents a tetravalent organic group, that is, a group derived from the tetracarboxylic dianhydride compound (a1). 2 represents a divalent organic group, that is, a group derived from the diamine compound (a2). 1. A 2 Each independently represents OR 3 or a monovalent organic group containing an ethylenically unsaturated group, and A 1. A At least one of R 2 is a monovalent organic group containing an ethylenically unsaturated group. 3 represents a hydrogen atom, an alkyl group having 1 to 20 carbon atoms, or a cycloalkyl group having 3 to 20 carbon atoms. More specifically, as A 1. A The monovalent organic group containing an ethylenically unsaturated group of 2, i.e., the group derived from the crosslinkable group-containing unsaturated compound (a3), comprises at least one selected from the group consisting of the structures represented by the following formula (A3-1), formula (A3-2), and formula (A3-3), Formula (A3-1) Formula (A3-2) Formula (A3-3) In formula (A3-1), formula (A3-2) and formula (A3-3), L 1. L 2 represents a divalent linear or branched alkyl group having 1 to 12 carbon atoms, a divalent cycloalkyl group having 3 to 12 carbon atoms, or a divalent aromatic ring group having 3 to 12 carbon atoms; L 3 represents a single bond, a divalent straight-chain or branched alkyl group having 1 to 12 carbon atoms; L 4 represents a hydrogen atom or L 3 bonds to form a divalent alicyclic group with 3 to 12 carbon atoms; R 0 represents a hydrogen atom or a methyl group. When the photosensitive resin composition does not include the polyimide precursor (A) containing an ethylenically unsaturated group, the photosensitive resin composition has poor breaking strength. [ Tetracarboxylic dianhydride compounds (a1)] The tetracarboxylic dianhydride compound (a1) includes a tetracarboxylic dianhydride compound (a1-1) and other tetracarboxylic dianhydride compounds (a1-2). Tetracarboxylic dianhydride compounds (a1-1) The tetracarboxylic dianhydride compound (a1-1) includes at least one selected from the group consisting of compounds represented by the following formula (A1-1), formula (A1-2), and formula (A1-3). Formula (A1-1) Formula (A1-2) Formula (A1-3) In formula (A1-3), k R 8 each independently represents a hydrogen atom, an alkyl group having 1 to 6 carbon atoms, or a monocyclic or condensed aromatic group having 6 to 14 carbon atoms; and k represents 1 or 2. Examples of the alkyl group having 1 to 6 carbon atoms include methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, sec-butyl, t-butyl, n-pentyl, and n-hexyl. Examples of the monocyclic or condensed aromatic group having 6 to 14 carbon atoms include phenyl, o-tolyl, m-tolyl, p-tolyl, 1-naphthyl, 2-naphthyl, 1-anthryl, 2-anthryl, and 9-anthryl. Preferred are methyl, ethyl, isopropyl, t-butyl, and phenyl. k is preferably 1. Specific examples of formula (A1-3) include: 9,9-bis[4-(3,4-dicarboxylic acid phenoxy)phenyl]fluorene dianhydride, 9,9-bis[4-(3,4-dicarboxylic acid phenoxy)-3-phenylphenyl]fluorene dianhydride, 9,9-bis[4-(2,3-dicarboxylic acid phenoxy)-3-phenylphenyl]fluorene dianhydride, 9,9-bis[4-(3,4-dicarboxylic acid phenoxy)-2-phenylphenyl]fluorene dianhydride, 9,9-bis[4-(2,3-dicarboxylic acid phenoxy)-2-phenylphenyl]fluorene dianhydride, 9,9-bis[4-(3,4-dicarboxylic acid phenoxy)-3-methylphenyl]fluorene dianhydride, 9,9- Bis[4-(2,3-dicarboxyphenoxy)-3-methylphenyl]fluorene dianhydride, 9,9-bis[4-(3,4-dicarboxyphenoxy)-2-methylphenyl]fluorene dianhydride, 9,9-bis[4-(2,3-dicarboxyphenoxy)-2-methylphenyl]fluorene dianhydride, 9,9-bis[4-(2,3-dicarboxyphenoxy)-3-ethylphenyl]fluorene dianhydride, 9,9-bis[4-(2,3-dicarboxyphenoxy)-3-ethylphenyl]fluorene dianhydride, 9,9-bis[4-(3,4-dicarboxyphenoxy)-2-ethylphenyl]fluorene dianhydride, 9,9-bis[4-(2,3-dicarboxyphenoxy) )-2-ethylphenyl] fluorene dianhydride, 9,9-bis[4-(3,4-dicarboxylic acid phenoxy)-3-propylphenyl] fluorene dianhydride, 9,9-bis[4-(2,3-dicarboxylic acid phenoxy)-3-propylphenyl] fluorene dianhydride, 9,9-bis[4-(3,4-dicarboxylic acid phenoxy)-2-propylphenyl] fluorene dianhydride, 9,9-bis[4-(2,3-dicarboxylic acid phenoxy)-2-propylphenyl] fluorene dianhydride, 9,9-bis[4-(3,4-dicarboxylic acid phenoxy)-3-butylphenyl] fluorene dianhydride, 9,9-bis[4-(2,3-dicarboxylic acid phenoxy)-3-butylphenyl] fluorene dianhydride, 9, Tetracarboxylic acid dianhydride compounds such as 9-bis[4-(3,4-dicarboxyphenoxy)-2-butylphenyl]fluorene dianhydride, 9,9-bis[4-(2,3-dicarboxyphenoxy)-2-butylphenyl]fluorene dianhydride, 9,9-bis[4-(3,4-dicarboxyphenoxy)-3-tert-butylphenyl]fluorene dianhydride, 9,9-bis[4-(2,3-dicarboxyphenoxy)-3-tert-butylphenyl]fluorene dianhydride, 9,9-bis[4-(3,4-dicarboxyphenoxy)-2-tert-butylphenyl]fluorene dianhydride, or 9,9-bis[4-(2,3-dicarboxyphenoxy)-2-tert-butylphenyl]fluorene dianhydride. Among them, 9,9-bis[4-(3,4-dicarboxyphenoxy)-3-phenylphenyl]fluorene dianhydride, 9,9-bis[4-(3,4-dicarboxyphenoxy)-2-phenylphenyl]fluorene dianhydride, 9,9-bis[4-(3,4-dicarboxyphenoxy)-3-methylphenyl]fluorene dianhydride and 9,9-bis[4-(3,4-dicarboxyphenoxy)-2-methylphenyl]fluorene dianhydride are preferred. Based on 100 mol% of the total amount of the tetracarboxylic dianhydride compound (a1), the amount of the tetracarboxylic dianhydride compound (a1-1) used is generally 15 mol% to 80 mol%, preferably 20 mol% to 75 mol%, and more preferably 25 mol% to 70 mol%. When the tetracarboxylic dianhydride compound (a1) includes the tetracarboxylic dianhydride compound (a1-1), chemical resistance can be further increased. Other tetracarboxylic dianhydride compounds (a1-2) Other tetracarboxylic dianhydride compounds (a1-2) include, for example, pyromellitic dianhydride, 2,3,6,7-naphthalenetetracarboxylic dianhydride, 3,3',4,4'-biphenyltetracarboxylic dianhydride, 3,3',4,4'-diphenyl ether tetracarboxylic dianhydride, 3,3',4,4'-benzophenonetetracarboxylic dianhydride, 1,2,5,6-naphthalenetetracarboxylic dianhydride, 2,3,5,6-pyridinetetracarboxylic dianhydride, 1,4,5,8-naphthalenetetracarboxylic dianhydride, 3,4,9,10-perylenetetracarboxylic dianhydride, m-terphenyl-3,3',4,4'-tetracarboxylic dianhydride, p-terphenyl-3,3',4,4'-tetracarboxylic dianhydride, 1,1,1,3,3,3-hexafluoro-2,2-bis(2,3-dicarboxyphenyl) Propane dianhydride, 1,1,1,3,3,3-hexafluoro-2,2-bis(3,4-dicarboxyphenyl)propane dianhydride, 2,2-bis(2,3-dicarboxyphenyl)propane dianhydride, 2,2-bis(3,4-dicarboxyphenyl)propane dianhydride, 2,2-bis{4'-(2,3-dicarboxyphenoxy)phenyl}propane dianhydride, 2,2-bis[4'-(3,4-dicarboxyphenoxy)phenyl]propane dianhydride, 1,1,1,3,3,3-hexafluoro-2,2'-bis[4'-(2,3-dicarboxyphenoxy)phenyl]propane dianhydride, 1,1,1,3,3,3-hexafluoro-2,2'-bis[4-(3,4-dicarboxyphenoxy)phenyl]propane dianhydride, and 4,4'-sulfonyldiphthalic dianhydride. Other tetracarboxylic dianhydride compounds (a1-2) can be used alone or in combination of two or more. From the viewpoint of reducing the thermal expansion coefficient of the cured film, other tetracarboxylic dianhydride compounds (a1-2) preferably include R in the formula (A-0). 1 represents a tetracarboxylic dianhydride having the following structure: In the formula, X and Y each independently represent a single bond or a divalent group that does not form a conjugated structure with the benzene ring to which it is bonded. [ Diamine compounds (a2)] The diamine compound (a2) includes the diamine compound (a2-1) and other diamine compounds (a2-2). Diamine compounds (a2-1) The diamine compound (a2-1) has a structure represented by the following formula (A2-1): Formula (A2-1) In formula (A2-1), R 9. R 10 、R 11 、R 12 Each independently represents a monovalent hydrocarbon group, and R 9. R 10 、R 11 、R 12 Each is the same or different; R 13 Each independently represents a divalent hydrocarbon group, and multiple R 13 are the same or different; n represents an integer of 1 to 10. Specific examples of formula (A2-1) include compounds such as 1,3-bis(3-aminopropyl)-1,1,3,3-tetramethyldisiloxane, 1,3-bis(4-aminobutyl)-1,1,3,3-tetramethyldisiloxane, 1,3-bis(3-aminopropyl)-1,1,3,3-tetraphenyldisiloxane, 1,3-bis(4-amino-3-methylphenyl)-1,1,3,3-tetramethyldisiloxane, 1,3-bis(3-aminopropyl)-1,3-diphenyl-1,3-dimethyldisiloxane, and 1,5-bis(3-aminopropyl)-1,3,3,5-tetraphenyl-1,5-dimethyltrisiloxane. Preferred diamine compounds (a2-1) include 1,3-bis(3-aminopropyl)-1,1,3,3-tetramethyldisiloxane, 1,3-bis(3-aminopropyl)-1,1,3,3-tetraphenyldisiloxane, and 1,5-bis(3-aminopropyl)-1,3,3,5-tetraphenyl-1,5-dimethyltrisiloxane. The diamine compounds (a2-1) may be used alone or as a mixture of several. Based on 100 mol% of the total usage of the diamine compound (a2), the usage of the diamine compound (a2-1) is generally 2 mol% to 25 mol%, preferably 2.5 mol% to 23 mol%, and more preferably 3 mol% to 20 mol%. When the diamine compound (a2-1) is included in the diamine compound (a2), chemical resistance can be further increased. Other diamine compounds (a2-2) Other diamine compounds (a2-2) Examples thereof include 2,2'-bis(trifluoromethyl)-4,4'-diaminobiphenyl, 2,2'-bis(fluoro)-4,4'-diaminobiphenyl, 4,4'-diaminooctafluorobiphenyl, p-phenylenediamine, m-phenylenediamine, p-phenylenediamine, m-phenylenediamine, 1,5-diaminonaphthalene, 4,4'-diaminobiphenyl, 4,4'-diaminobiphenyl, 4,4'-diaminooctafluorobiphenyl, 1,5-diaminonaphthalene ... 4'-(or 3,4'-, 3,3'-, 2,4'-, 2,2'-)diaminodiphenyl ether, 4,4'-(or 3,4'-, 3,3'-, 2,4'-, 2,2'-)diaminodiphenyl sulfide, 4,4'-(or 3,4'-, 3,3'-, 2,4'-, 2,2'-)diaminodiphenyl sulfide, 2,2'-dimethyl-4,4' -diaminobiphenyl, 3,3'-dimethyl-4,4'-diaminobiphenyl, 3,3'-dimethyl-4,4'-diaminodiphenylmethane, 4,4'-diaminodiphenylmethane-bis-(2,6-diethylaniline), 4,4'-diaminodiphenylmethane-bis-(2,6-diisopropylaniline), 2,4-diaminodimethyl-1,5-diaminonaphthalene, 4,4'-benzophenonediamine, bis-[4-(4'-aminophenoxy)phenyl]sulfone, 2,2-bis[4-(4'-aminophenoxy)phenyl]propane, 3,3'-dimethyl-4,4'-diaminodiphenylmethane, 3,3',5,5'-tetramethyl-4,4'-diaminodiphenylmethane, bis[4-(3'-aminophenoxy)phenyl]sulfone, 2,2-bis(4-aminophenyl)propane. Other diamine compounds (a2-2) can be used alone or in combination of two or more. From the viewpoint of breaking strength and chemical resistance, preferred examples of the other diamine compound (a2-2) include 2,2'-bis(trifluoromethyl)-4,4'-diaminobiphenyl, 2,2'-bis(fluoro)-4,4'-diaminobiphenyl, and 4,4'-diaminooctafluorobiphenyl. From the viewpoint of chemical resistance, preferred examples of other diamine compounds (a2-2) include R 2 represents a diamine having a structure represented by the following formula (A2-2-1) or formula (A2-2-2); from the perspective of ease of use, the other diamine compound (a2-2) is preferably R in formula (A-0) 2 represents a diamine having a structure represented by the following formula (A2-2-2): Formula (A2-2-1): In formula (A2-2-1), R 20 ~R 27 Each independently represents a hydrogen atom, a fluorine atom or a monovalent organic group, and R 20 ~R 27At least one of represents a fluorine atom or a trifluoromethyl group. Formula (A2-2-2): In formula (A2-2-2), R 28 、R 29 Each independently represents a fluorine atom or a trifluoromethyl group. [ Unsaturated compounds containing crosslinking groups (a-3)] The crosslinkable group-containing unsaturated compound (a-3) includes at least one selected from the group consisting of an isocyanate group-containing unsaturated compound (a3-1), a hydroxyl group-containing unsaturated compound (a3-2), and an epoxy group-containing unsaturated compound (a3-3). Unsaturated compounds containing isocyanate groups (a3-1) The unsaturated compound containing an isocyanate group (a3-1) is a compound that can react with the polyimide precursor (A 0) after the reaction to form a compound having a structure as shown in formula (A3-1). When the polyimide precursor (A) containing an ethylenically unsaturated group includes a structure as shown in formula (A3-1), the breaking strength of the photosensitive resin composition can be further improved. More specifically, the isocyanate group-containing unsaturated compound (a3-1) has a structure represented by the following formula (A3-1-1). Formula (A3-1-1) In formula (A3-1-1), L 1 represents a divalent linear or branched alkyl group having 1 to 12 carbon atoms, a divalent cycloalkyl group having 3 to 12 carbon atoms, or a divalent aromatic ring group having 3 to 12 carbon atoms; R 0 represents a hydrogen atom or a methyl group. Examples of the isocyanate group-containing unsaturated compound (a3-1) include methyl isocyanate (meth)acrylate, 2-isocyanate ethyl (meth)acrylate, 3-isocyanate propyl (meth)acrylate, 2-isocyanate propyl (meth)acrylate, 4-isocyanate n-butyl (meth)acrylate, 3-isocyanate butyl (meth)acrylate, 2-isocyanate tert-butyl (meth)acrylate, 5-isocyanate n-pentyl (meth)acrylate, 6-isocyanate n-hexyl (meth)acrylate, 7-isocyanate n-heptyl (meth)acrylate, 8-isocyanate n-octyl (meth)acrylate, 9-isocyanate n-nonyl (meth)acrylate, 10-isocyanate n-decyl (meth)acrylate, isocyanatocyclohexyl (meth)acrylate, 3-isocyanate phenyl (meth)acrylate, isocyanatonaphthyl (meth)acrylate, and isocyanatodiphenyl (meth)acrylate. The isocyanate group-containing unsaturated compound (a3-1) can be used alone or in combination of two or more. Unsaturated compounds containing hydroxyl groups (a3-2) The hydroxyl-containing unsaturated compound (a3-2) is a compound that can react with the polyimide precursor (A 0) After the reaction, a compound having a structure as shown in formula (A3-2) is formed. More specifically, the hydroxyl group-containing unsaturated compound (a3-2) has a structure represented by the following formula (A3-2-1). Formula (A3-2-1) In formula (A3-2-1), L 2 represents a divalent linear or branched alkyl group having 1 to 12 carbon atoms, a divalent cycloalkyl group having 3 to 12 carbon atoms, or a divalent aromatic ring group having 3 to 12 carbon atoms; R 0 represents a hydrogen atom or a methyl group. Examples of the hydroxyl-containing unsaturated compound (a3-2) include hydroxymethyl (meth)acrylate, 2-hydroxyethyl (meth)acrylate, 3-hydroxypropyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate, 3-hydroxybutyl (meth)acrylate, 2-hydroxybutyl (meth)acrylate, 5-hydroxy-n-pentyl (meth)acrylate, 6-hydroxy-n-hexyl (meth)acrylate, 7-hydroxy-n-heptyl (meth)acrylate, 8-hydroxy-n-octyl (meth)acrylate, 9-hydroxy-n-nonyl (meth)acrylate, 10-hydroxy-n-decyl (meth)acrylate, hydroxycyclohexyl (meth)acrylate, hydroxyphenyl (meth)acrylate, hydroxynaphthyl (meth)acrylate, and hydroxybiphenyl (meth)acrylate. The hydroxyl-containing unsaturated compound (a3-2) can be used alone or in combination. Unsaturated compounds containing epoxy groups (a3-3) The unsaturated compound containing epoxy group (a3-3) is a compound that can react with the polyimide precursor (A 0) After the reaction, a compound having a structure shown in formula (A3-3) is formed. More specifically, the epoxy group-containing unsaturated compound (a3-3) has a structure represented by the following formula (A3-3-1). Formula (A3-3-1) In formula (A3-3-1), L 3 represents a single bond, a divalent straight-chain or branched alkyl group having 1 to 12 carbon atoms; L 4 represents a hydrogen atom or L 3 bonds to form a divalent alicyclic group with 3 to 12 carbon atoms; R 0 represents a hydrogen atom or a methyl group. Examples of the epoxy group-containing unsaturated compound (a3-3) include glycidyl (meth)acrylate, 3,4-epoxybutyl (meth)acrylate, 4,5-epoxypentyl (meth)acrylate, 5,6-epoxyhexyl (meth)acrylate, 6,7-epoxyheptyl (meth)acrylate, 7,8-epoxyoctyl (meth)acrylate, 8,9-epoxynonyl (meth)acrylate, 9,10-epoxydecyl (meth)acrylate, 3,4-epoxycyclohexyl (meth)acrylate, 3,4-epoxycyclohexylmethyl (meth)acrylate, and 8-3,4-epoxytricyclodecan-8-yl (meth)acrylate. The epoxy group-containing unsaturated compound (A-3-3) can be used alone or in combination. [ Polyimide precursor containing ethylenically unsaturated groups (A) Manufacturing method ] The following specifically describes the method for producing the polyimide precursor (A) containing an ethylenically unsaturated group. [ Polyimide precursor (A 0) Manufacturing method ]Polyimide precursor (A (a-0) is obtained by condensation polymerization of a mixture of a tetracarboxylic dianhydride compound (a-1) and a diamine compound (a-2). The condensation polymerization reaction time is, for example, 30 minutes to 24 hours. The condensation polymerization reaction temperature is, for example, 0°C to 100°C. [ As (A3-1) shown Method for introducing ethylenically unsaturated groups ] As a method for introducing an ethylenically unsaturated group as represented by formula (A3-1) into a polyimide precursor, there can be cited: introducing a polyimide precursor (A The condensation reaction is carried out by condensing the isocyanate group-containing unsaturated compound (a3-1) with the isocyanate group-containing unsaturated compound (a3-1). The reaction time of the condensation reaction is, for example, 30 minutes to 24 hours. The reaction temperature of the condensation reaction is, for example, 0°C to 120°C. A catalyst may or may not be added during the condensation reaction. Examples of the catalyst include 3-methyl-1-phenyl-3-phosphine-1-oxide, tri-n-butylphosphine oxide, triphenylphosphine oxide, tri-n-octylphosphine oxide, diphenylethylphosphine oxide, ethylmethylphenylphosphine oxide, diphenylmethoxymethylphosphine oxide, diphenylmorpholinylmethylphosphine oxide, and diphenylbenzylphosphine oxide. Preferred among these are diphenylethylphosphine oxide, ethylmethylphosphine oxide, and the compound represented by the following formula (A3-1-a). Formula (A3-1-a): In formula (A3-1-a), Ar represents an aromatic group, and R 30 It represents an alkyl group having 1 to 8 carbon atoms. Among the compounds shown in formula (A3-1-a), the best compound is R 30 It represents 3-methyl-1-phenyl-3-phosphine-1-oxide of methyl group. [ As (A3-2) shown Method for introducing ethylenically unsaturated groups ] As a method for introducing an ethylenically unsaturated group as represented by formula (A3-2) into a polyimide precursor, there can be cited: introducing the polyimide precursor (A 0) is subjected to an isoimide reaction with a catalyst as shown in the following formula (A3-2-a), and then reacts with a hydroxyl-containing unsaturated compound (a3-2) to open the isoimide ring and partially esterify it. 0) is activated, and thus, the molecular conversion reaction with the hydroxyl-containing unsaturated compound (a3-2) becomes easier. Formula (A3-2-a) In addition, a known dehydration condensation agent may be used instead of the catalyst shown in formula (A3-2-a). Known dehydration condensation agents include catalysts such as N,N'-dicyclohexylcarbodiimide (DCC), sulfinyl chloride, and N-methylmethylenesulfonamide. In addition, a tertiary amine such as triethylamine, pyridine, or picoline may be added in an amount of 1.00 to 1.20 molar equivalents relative to the dehydration condensation agent to promote the reaction. The reaction time of the isoimidization reaction is, for example, 1 to 6 hours, and the reaction temperature of the isoimidization reaction is, for example, 20°C to 70°C. The reaction time of the partial esterification reaction is, for example, 1 hour to 24 hours, and the reaction temperature of the partial esterification reaction is, for example, 10°C to 70°C. [ As (A3-3) shown Method for introducing ethylenically unsaturated groups ] As a method for introducing an ethylenically unsaturated group as represented by formula (A3-3) into a polyimide precursor, there can be cited: introducing the polyimide precursor (A 0) is obtained by reacting with an epoxy group-containing unsaturated compound (a3-3) in the presence of a catalyst represented by the following formula (A3-3-a). Formula (A3-3-a) The reaction time is, for example, 1 to 24 hours, and the reaction temperature is, for example, 80°C to 120°C. [ Compounds containing ethylenically unsaturated groups (B)] The ethylenically unsaturated group-containing compound (B) includes the ethylenically unsaturated group-containing compound (B-1) and other ethylenically unsaturated group-containing compounds (B-2). Compounds containing ethylenically unsaturated groups (B-1) The ethylenically unsaturated group-containing compound (B-1) has a structure represented by the following formula (B1): Formula (B1) In formula (B1), R 4 represents a divalent straight-chain or branched aliphatic group having 1 to 12 carbon atoms, a divalent alicyclic group having 3 to 12 carbon atoms, a divalent aromatic ring group, or [-(CH 2) g -O-(CH 2) h -] i ; g and h each independently represent an integer of 1 to 10; i represents an integer of 1 to 5. 5 represents a divalent straight-chain or branched aliphatic group having 1 to 10 carbon atoms, a divalent alicyclic group having 3 to 10 carbon atoms, a divalent aromatic ring group, or [-(CH 2) p -O-(CH 2) q -] r; p and q each independently represent an integer of 1 to 10; r represents an integer of 1 to 5. 6 and R 7 are each independently a hydrogen atom or a methyl group. From the perspective of the curability of the photosensitive resin composition and the hardness of the cured film, R 4 is preferably a divalent straight or branched aliphatic group having 1 to 6 carbon atoms or [-(CH 2) g -O-(CH 2) h -] i (wherein, g and h each independently represent an integer of 1 to 5; i represents an integer of 1 to 6), more preferably a divalent straight-chain or branched aliphatic group having 2 to 4 carbon atoms or [-(CH 2) g -O-(CH 2) h -] i (wherein, g and h each independently represent an integer of 2 to 4; i represents 1 or 2), and preferably a divalent straight-chain or branched aliphatic group having 2 carbon atoms or -(CH 2) 2-O-(CH 2) 2-. From the perspective of the curability of the photosensitive resin composition and the hardness of the cured film, R 5 is preferably a divalent straight or branched aliphatic group having 1 to 6 carbon atoms or [-(CH 2) p -O-(CH 2) q -] r (wherein, p and q each independently represent an integer of 1 to 5; r represents an integer of 1 to 6), more preferably a divalent straight-chain or branched aliphatic group having 2 to 4 carbon atoms or [-(CH 2) g -O-(CH 2) h -] i(wherein p and q each independently represent an integer of 2 to 4; r represents 1 or 2), and preferably a divalent straight-chain or branched aliphatic group having 2 carbon atoms or -(CH 2) 2-O-(CH 2) 2-. From the perspective of curability of low exposure curing, R 6 and R 7 is preferably a hydrogen atom. Specific examples of the formula (B1) include compounds represented by the following formulas (B1-1) to (B1-15). Formula (B1-1) Formula (B1-2) Formula (B1-3) Formula (B1-4) Formula (B1-5) Formula (B1-6) Formula (B1-7) Formula (B1-8) Formula (B1-9) Formula (B1-10) Formula (B1-11) Formula (B1-12) Formula (B1-13) Formula (B1-14) Formula (B1-15) Based on the total usage of 100 parts by weight of the compound containing an ethylenically unsaturated group (B), the usage of the compound containing an ethylenically unsaturated group (B-1) is generally 1 to 10 parts by weight, preferably 1.5 to 9.5 parts by weight, and more preferably 2 to 9 parts by weight. When the photosensitive resin composition includes the ethylenically unsaturated group-containing compound (B-1), the breaking strength of the photosensitive resin composition can be further improved. Other compounds containing ethylenically unsaturated groups (B-2) Other ethylenically unsaturated group-containing compounds (B-2) include, for example, diethylene glycol diacrylate, triethylene glycol diacrylate, tetraethylene glycol diacrylate, diethylene glycol dimethacrylate, triethylene glycol dimethacrylate, tetraethylene glycol dimethacrylate, trimethylolpropane diacrylate, trimethylolpropane triacrylate, trimethylolpropane dimethacrylate, trimethylolpropane trimethacrylate, 1,4-butanediol diacrylate, 1,6-hexanediol diacrylate, 1,4-butanediol dimethacrylate, 1,6-Hexanediol dimethacrylate, pentaerythritol triacrylate, pentaerythritol tetraacrylate, pentaerythritol trimethacrylate, pentaerythritol tetramethacrylate, dipentaerythritol hexamethacrylate, styrene, divinylbenzene, 4-vinyltoluene, 4-vinylpyridine, N-vinylpyrrolidone, 2-hydroxyethyl (meth)acrylate, 1,3-acryloyloxy-2-hydroxypropane, 1,3-methacryloyloxy-2-hydroxypropane, methylenebisacrylamide, N,N-dimethylacrylamide, and N-hydroxymethylacrylamide. Other ethylenically unsaturated group-containing compounds (B-2) can be used alone or in combination. Based on 100 parts by weight of the total usage of the polyimide precursor containing an ethylenically unsaturated group (A), the usage of the compound containing an ethylenically unsaturated group (B) is generally 15 to 100 parts by weight, preferably 17 to 95 parts by weight, and more preferably 20 to 90 parts by weight. [ Photoinitiator (C)] The photoinitiator (C) is not particularly limited as long as it is a compound capable of generating free radicals by active light. From the viewpoint of generating free radicals, the photoinitiator (C) is preferably a compound having a structure represented by the following formula (C1-1). Formula (C1-1): In formula (C1-1), R 40 represents a monovalent aromatic ring group or heterocyclic group, and the aromatic ring group and the heterocyclic group may have a substituent. Examples of the photoinitiator (C) include compounds classified as oxime esters described below, benzophenone, N,N'-tetraalkyl-4,4'-diaminobenzophenone compounds such as N,N'-tetramethyl-4,4'-diaminobenzophenone (Michler's ketone); aromatic ketones such as 2-benzyl-2-dimethylamino-1-(4-morpholinophenyl)-butanone-1, 2-methyl-1-[4-(methylthio)phenyl]-2-morpholino-propanone; quinones fused with an aromatic ring such as alkyl anthraquinone; benzoin ether compounds such as benzoin alkyl ether; benzoin compounds such as benzoin and benzoin alkyl; and benzyl derivatives such as benzyl dimethyl ketal. Furthermore, examples of the photoinitiator (C) include compounds represented by the following formula (C1-2). Formula (C1-2) In formula (C1-2), R 41 represents an alkyl group having 1 to 20 carbon atoms, an alkyl group having 2 to 20 carbon atoms interrupted by one or more oxygen atoms, an alkoxy group having 1 to 12 carbon atoms, a phenyl group, or a biphenyl group; the phenyl group may be substituted with at least one substituent selected from an alkyl group having 1 to 20 carbon atoms, an alkyl group having 2 to 18 carbon atoms interrupted by one or more oxygen atoms, an alkoxy group having 1 to 12 carbon atoms, a halogen atom, a cyclopentyl group, and a cyclohexyl group. 42 Represents a structure as shown in the following formula (C1-3) or with R 41 Define the same basis. R 43 ~R 45 Each independently represents an alkyl group having 1 to 12 carbon atoms, an alkoxy group having 1 to 12 carbon atoms, or a halogen atom. Formula (C1-3) In formula (C-3), R 46 ~R 48 Each independently represents an alkyl group having 1 to 12 carbon atoms, an alkoxy group having 1 to 12 carbon atoms, or a halogen atom. Among the photoinitiators (C), oxime ester compounds are particularly preferred because they can further enhance the photosensitivity and thus impart a well-shaped pattern to the photosensitive resin composition including the polyimide precursor. From the viewpoint of obtaining good sensitivity and residual film rate, the oxime ester compound is preferably a compound represented by the following formula (C1-4). Formula (C1-4): In formula (C1-4), R 49represents a phenyl group, an alkyl group having 1 to 20 carbon atoms, an alkyl group having 2 to 20 carbon atoms separated by one or more oxygen atoms, a cycloalkyl group having 5 to 8 carbon atoms, an acyl group having 2 to 20 carbon atoms, a benzyl group, an alkoxycarbonyl group having 2 to 12 carbon atoms, an alkoxycarbonyl group having 2 to 11 carbon atoms separated by one or more oxygen atoms, a phenoxycarbonyl group, a cyano group, a nitro group, or -CONR 56 R 57 , haloalkyl with 1 to 4 carbon atoms, -SOR 60 、-SO 2R 60 , an alkoxysulfonyl group having 1 to 6 carbon atoms, an aryloxysulfonyl group having 6 to 10 carbon atoms, or a diphenylphosphinoyl group; wherein the phenyl or phenyloxycarbonyl group may be selected from an alkyl group having 1 to 6 carbon atoms, a phenyl group, a halogen atom, -OR 61 、-SR 61 and -N(R 61 ) 2; the alkyl or alkoxycarbonyl group may be substituted by a hydroxyl group; the benzoyl group may be substituted by an alkyl group selected from a carbon number of 1 to 6, a phenyl group, -OR 61 、-SR 61 and -N(R 61 ) 2 is substituted by at least one substituent. 60 represents an alkyl group having 1 to 6 carbon atoms or an aryl group having 6 to 12 carbon atoms; the aryl group may be substituted by an alkyl group having 1 to 12 carbon atoms. 61 represents an alkyl group having 1 to 20 carbon atoms. 50 represents an acyl group having 2 to 12 carbon atoms, an alkenyl group having 4 to 6 carbon atoms in which the double bond and the carbonyl group are not conjugated, a benzoyl group, an alkoxycarbonyl group having 2 to 6 carbon atoms, or a phenoxycarbonyl group; wherein the acyl group may be substituted with at least one substituent selected from a halogen atom and a cyano group; the benzoyl group may be substituted with at least one substituent selected from an alkyl group having 1 to 6 carbon atoms, a halogen atom, a cyano group, -OR 56 、-SR 57 and -NR 58 R 59 The phenoxycarbonyl group may be substituted by at least one substituent selected from an alkyl group having 1 to 6 carbon atoms and a halogen atom. 51 ~R 55 each independently represents a hydrogen atom, a halogen atom, an alkyl group having 1 to 12 carbon atoms, a cyclopentyl group, a cyclohexyl group, a phenyl group, a benzyl group, a benzoyl group, an acyl group having 2 to 12 carbon atoms, an alkoxycarbonyl group having 2 to 12 carbon atoms, an alkoxycarbonyl group having 2 to 11 carbon atoms separated by one or more oxygen atoms, a phenoxycarbonyl group, or -OR 56 、-SR 57 、-SOR 57 or -NR 58 R 59 ; Wherein, the phenyl group can be selected from -OR 56 、-SR 57 and -NR 58 R 59 The alkoxycarbonyl group may be substituted by a hydroxyl group; the -OR 56 、-SR 57 and -NR 58 R 59 It can be bonded to a carbon atom in a benzene ring or a substituent thereof to form a five-membered ring or a six-membered ring. 51 ~R 55 At least one of them is -OR 56 、-SR 57 or -NR 58 R 59 . R 56 represents a hydrogen atom, an alkyl group having 1 to 12 carbon atoms, an alkyl group having 2 to 6 carbon atoms with one or more oxygen atoms interposed therebetween, an acyl group having 2 to 8 carbon atoms, -(CH 2CH 2O) s H, alkenyl having 3 to 12 carbon atoms, alkenyl having 3 to 6 carbon atoms, cyclohexyl, phenyl, phenylalkyl having 7 to 9 carbon atoms, or -Si(R 62 ) t (R 63 ) 3-t wherein the alkyl group may be substituted by at least one substituent selected from hydroxyl, mercapto, cyano, alkoxy having 1 to 4 carbon atoms, alkenyloxy having 3 to 6 carbon atoms, 2-cyanoethoxy, 2-(alkoxycarbonyl)ethoxy having 4 to 7 carbon atoms, alkylcarbonyloxy having 2 to 5 carbon atoms, phenylcarbonyloxy, and alkoxycarbonyl having 2 to 5 carbon atoms; and the phenyl group may be substituted by at least one substituent selected from halogen atoms, alkyl having 1 to 12 carbon atoms, and alkoxy having 1 to 4 carbon atoms. s represents an integer of 1 to 20. R 62 represents an alkyl group having 1 to 8 carbon atoms. 63 represents a phenyl group. t represents an integer of 1 to 3. 57 R represents a hydrogen atom, an alkyl group having 1 to 12 carbon atoms, an alkenyl group having 3 to 12 carbon atoms, a cyclohexyl group, an alkyl group having 2 to 12 carbon atoms separated by one or more oxygen atoms or sulfur atoms, a phenyl group, or a phenylalkyl group having 7 to 9 carbon atoms; wherein the alkyl group may be substituted with at least one substituent selected from the group consisting of a hydroxyl group, a mercapto group, a cyano group, an alkoxy group having 1 to 4 carbon atoms, an alkenyloxy group having 3 to 6 carbon atoms, a 2-cyanoethoxy group, a 2-(alkoxycarbonyl)ethoxy group having 4 to 7 carbon atoms, an alkylcarbonyloxy group having 2 to 5 carbon atoms, a phenylcarbonyloxy group, a carboxyl group, and an alkoxycarbonyl group having 2 to 5 carbon atoms; and the phenyl group may be substituted with at least one substituent selected from the group consisting of a halogen atom, an alkyl group having 1 to 12 carbon atoms, and an alkoxy group having 1 to 4 carbon atoms. 58 、R 59 Each independently represents an alkyl group having 1 to 12 carbon atoms, a hydroxyalkyl group having 2 to 4 carbon atoms, an alkoxyalkyl group having 2 to 10 carbon atoms, an alkenyl group having 3 to 5 carbon atoms, a cycloalkyl group having 5 to 12 carbon atoms, a phenylalkyl group having 7 to 9 carbon atoms, a phenyl group, an acyl group having 2 to 3 carbon atoms, an alkenyl group having 3 to 6 carbon atoms, or a benzoyl group; wherein the phenyl group may be substituted with at least one substituent selected from an alkyl group having 1 to 12 carbon atoms and an alkoxy group having 1 to 4 carbon atoms; R 58 、R 59They may be bonded to each other to form an alkylene group having 2 to 6 carbon atoms, an alkylene group having 2 to 6 carbon atoms separated by one or more oxygen atoms, or an alkylene group having 2 to 6 carbon atoms separated by one or more -NR 56 - an alkylene group having 2 to 6 carbon atoms; the alkylene group may be substituted by at least one substituent selected from the group consisting of a hydroxyl group, an alkoxy group having 1 to 4 carbon atoms, an acyloxy group having 2 to 4 carbon atoms, and a benzoyloxy group. In formula (C1-4), R 51 ~R 55 At least one of them is -SR 57 The compound is better in terms of sensitivity and residual film rate. In formula (C1-4), R 49 It is preferably an alkyl group having 1 to 10 carbon atoms, more preferably an alkyl group having 4 to 7 carbon atoms, and particularly preferably a hexyl group. 51 ~R 55 Preferably, four of them are hydrogen atoms, more preferably R 51 ~R 54 is a hydrogen atom and R 55 For-SR 57 Here R 57 Preferred is a cyclohexyl group, a phenyl group or a phenylalkyl group having 7 to 10 carbon atoms, more preferred is a phenyl group or a phenylalkyl group having 7 to 10 carbon atoms, and particularly preferred is a phenyl group. From the viewpoint of better chemical resistance and higher sensitivity, the photoinitiator (C) is preferably a compound represented by the following formula (C1-5). Formula (C1-5) Based on the total usage of the polyimide precursor (A) containing an ethylenically unsaturated group is 100 parts by weight, the usage of the photoinitiator (C) is generally 0.05 to 5.5 parts by weight, preferably 0.1 to 5 parts by weight, and more preferably 0.6 to 4.5 parts by weight. [ solvent (D)] The solvent (D) is not particularly limited as long as it is a solvent that can completely dissolve the polyimide precursor. Examples include N-methyl-2-pyrrolidone, N,N-dimethylacetamide, N,N-dimethylformamide, dimethylsulfoxide, tetramethylurea, hexamethylphosphotriamide, γ-butyrolactone, δ-valerolactone, γ-valerolactone, cyclohexanone, cyclopentanone, propylene glycol monomethyl ether acetate, propylene carbonate, ethyl lactate, and 1,3-dimethyl-2-imidazolidinone. Solvent (D) can be used alone or in combination. Based on 100 parts by weight of the total usage of the polyimide precursor containing an ethylenically unsaturated group (A), the usage of the solvent (D) is generally 100 to 800 parts by weight, preferably 130 to 750 parts by weight, and more preferably 150 to 700 parts by weight. [ Organosilicon compounds (E)] The organosilicon compound (E) of the present invention is not particularly limited as long as it is a bivalent organic group containing a urea bond, connecting an organic functional group having a photopolymerizable double bond and a silicon atom bonded to a hydrolyzable group. A monomer is preferred. Examples of the organic functional group having a photopolymerizable double bond include vinyl, acryl, and methacryl, with acryl and methacryl being more preferred. Examples of the hydrolyzable group bonded to the silicon atom include alkoxy groups such as methoxy, ethoxy, propoxy, and butoxy, halogen atoms such as chlorine and bromine, and acetyloxy. Alkoxy groups are preferred, alkoxy groups having 1 to 4 carbon atoms are more preferred, and methoxy and ethoxy groups are particularly preferred. The structure of the linking of an organic functional group having a photopolymerizable double bond and a divalent organic group containing a urea bond is preferably represented by the following formula (E1): Formula (E1) In formula (E1), Y represents an acryl group or a (meth)acryl group; X represents a hydrogen atom or a monovalent hydrocarbon group which may have a substituent, wherein -CH 2- may be substituted by -O-, -S-, -N- or -CO-; L represents a divalent hydrocarbon group which may have a substituent, wherein -CH 2- may be substituted by -O-, -S-, -N- or -CO-; and W represents a divalent hydrocarbon group which may have a substituent, wherein -CH 2- may be substituted with -O-, -S-, -N-, or -CO-. In the above structure, the substituents in X, L, and W are, for example, one selected from the group consisting of a halogen atom, an alkyl group, a perfluoroalkyl group, a polyether group, a perfluoropolyether group, a hydrolyzable silyl group, a (meth)acryl group, an epoxy group, an amino group, and a mercapto group. Alkyl groups, hydrolyzable silyl groups, and (meth)acryl groups are preferred. The monovalent hydrocarbon group for X preferably has 1 to 20 carbon atoms, particularly 1 to 10 carbon atoms, and includes alkyl groups, alkenyl groups, aryl groups, and cycloalkyl groups. Furthermore, the divalent hydrocarbon groups for L and W preferably have 1 to 20 carbon atoms, particularly 1 to 10 carbon atoms, and include alkylene groups and arylene groups. Preferred organosilicon compounds of the present invention include those represented by the following general formulas (E2), (E3) and (E4). Formula (E2) In formula (E2), B is a hydrolyzable group, R 14 Each independently represents an alkyl group having 1 to 4 carbon atoms which may have a substituent, n represents an integer from 1 to 3, Z represents an alkylene group having 1 to 6 carbon atoms which may have a substituent, R 15 is a hydrogen atom or an alkyl group having 1 to 8 carbon atoms which may have a substituent, R 16 represents a structure represented by the following formula (E21) or the following formula (E22), Formula (E21) Formula (E22) In formula (E21) and formula (E22), R 20 and R 21 Each independently represents a hydrogen atom or a methyl group, and m represents an integer of 1 to 4. Formula (E3) In formula (E3), B is a hydrolyzable group, R 14 Each independently represents an alkyl group having 1 to 4 carbon atoms which may have a substituent, n represents an integer from 1 to 3, Z represents an alkylene group having 1 to 6 carbon atoms which may have a substituent, R 17 、R 18 One of them is represented by the following formula (E21) or the following formula (E22); the other is a group represented by the following formula (E21) or the following formula (E22), a hydrogen atom, or an alkyl group having 1 to 8 carbon atoms which may have a substituent, Formula (E21) Formula (E22) In formula (E21) and formula (E22), R 20 and R 21Each independently represents a hydrogen atom or a methyl group, and m represents an integer of 1 to 4. Formula (E4): In formula (E4), B is a hydrolyzable group, R 14 Each independently represents an alkyl group having 1 to 4 carbon atoms which may have a substituent, n represents an integer from 1 to 3, Z represents an alkylene group having 1 to 6 carbon atoms which may have a substituent, R 19 represents a structure represented by the following formula (E21) or the following formula (E22), Formula (E21) Formula (E22) In formula (E21) and formula (E22), R 20 and R 21 Each independently represents a hydrogen atom or a methyl group, and m represents an integer of 1 to 4. Here, in the above formulas (E2), (E3) and (E4), B is a hydrolyzable group, and examples thereof include alkoxy groups such as methoxy, ethoxy, propoxy, butoxy, halogen atoms such as chlorine and bromine, and acetyloxy. Preferably, it is an alkoxy group, more preferably, it is an alkoxy group having 1 to 4 carbon atoms, and particularly preferably, it is a methoxy group or an ethoxy group. 14 Each of the groups is independently an unsubstituted or substituted alkyl group having 1 to 4 carbon atoms, specifically methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, etc. n is an integer of 1 to 3, preferably 2 or 3. R in the above formula (E2) 15 Each of the following groups is independently a hydrogen atom or an unsubstituted or substituted alkyl group having 1 to 8 carbon atoms. Specific examples include hydrogen, methyl, ethyl, propyl, isopropyl, butyl, isobutyl, t-butyl, pentyl, hexyl, cyclohexyl, and octyl groups. Furthermore, in formulas (E2), (E3), and (E4), Z is, for example, a methylene group, an ethylene group, a propylene group, a 1-methyl-propylene group, a 2-methyl-propylene group, a 3-methyl-propylene group, or a butylene group, but is not limited to the examples shown here. From the perspective of crack resistance, structure (E2) is a preferred structure. Specific examples of the organosilicon compound of the present invention having a photopolymerizable double bond bonded to urea in one molecule are shown in the following structural formulas (E2-1) to (E4-3). Furthermore, compounds in which the methoxy group in the above formula is replaced by an ethoxy group can also be exemplified in the same manner. The organosilicon compound of the present invention can be obtained by reacting an organosilicon compound containing a primary amino group and / or a secondary amino group and a hydrolyzable group with an isocyanate compound having a photopolymerizable group. When preparing the organosilicon compound of the present invention, a solvent may be used as needed. The solvent is not particularly limited as long as it is non-reactive with the aminosilane and isocyanate compounds as raw materials. Specific examples include aliphatic hydrocarbon solvents such as pentane, hexane, heptane, and decane; ether solvents such as diethyl ether, tetrahydrofuran, and 1,4-dioxane; amide solvents such as formamide, dimethylformamide, and N-methylpyrrolidone; and aromatic hydrocarbon solvents such as benzene, toluene, and xylene. The preparation of the organosilicon compound of the present invention is exothermic, and using excessively high temperatures can lead to side reactions. Therefore, the reaction temperature is preferably between -10°C and 150°C, more preferably between 0°C and 100°C, and even more preferably between 5°C and 50°C. Temperatures below -10°C not only slow the reaction rate and reduce productivity, but also require specialized manufacturing equipment to maintain the extremely low temperature, which is impractical. On the other hand, temperatures above 150°C may lead to side reactions such as polymerization of polymerizable functional groups. The reaction time required for preparing the organosilicon compound of the present invention is not particularly limited as long as the temperature can be controlled by the exothermic reaction as described above and the exothermic reaction is complete, but is preferably 10 minutes to 24 hours, more preferably about 1 hour to 10 hours. The organosilicon compound containing a primary amino group and / or a secondary amino group and a hydrolyzable group, which is a raw material required for the production of the organosilicon compound of the present invention, is not particularly limited. Specific examples thereof include α-aminomethyltrimethoxysilane, α-aminomethylmethyldimethoxysilane, α-aminomethyldimethylmethoxysilane, α-aminomethyltriethoxysilane, α-aminomethylmethyldiethoxysilane, α-aminomethyldimethylethoxysilane, γ-aminopropyltrimethoxysilane, γ-aminopropylmethyldimethoxysilane, γ-aminopropyldimethylmethoxysilane, γ-aminopropyltriethoxysilane, γ-aminopropylmethyldiethoxysilane, γ-aminopropyldimethylethoxysilane, N -2(aminoethyl)α-aminomethyltrimethoxysilane, N-2(aminoethyl)α-aminomethylmethyldimethoxysilane, N-2(aminoethyl)α-aminomethyldimethylmethoxysilane, N-2(aminoethyl)α-aminomethyltriethoxysilane, N-2(aminoethyl)α-aminomethylmethyldiethoxysilane, N-2(aminoethyl)α-aminomethyldimethylethoxysilane, bis-(trimethoxysilylpropyl)amine, bis-(methyldimethoxysilylpropyl)amine, bis-(dimethylmethoxysilylpropyl)amine, bis-(triethoxysilylpropyl)amine, bis-(methyldiethoxysilylpropyl)amine, bis-(dimethylethoxysilylpropyl)amine, and the like. The isocyanate compound having a photopolymerizable group, which is a raw material required for preparing the organosilicon compound of the present invention, is not particularly limited as long as it has the above-mentioned functional groups. Examples of commercially available compounds that are readily available include (meth)acryloyloxyethyl isocyanate, ethylene glycol-isocyanatoethyl ether mono(meth)acrylate, and bis-1,1-((meth)acryloyloxymethyl)ethyl isocyanate. When preparing the organosilicon compound of the present invention, the ratio of the organosilicon compound containing primary and / or secondary amine groups and hydrolyzable groups to the isocyanate compound containing photopolymerizable groups is not particularly limited. However, from the perspective of reactivity and productivity, the isocyanate compound containing photopolymerizable groups is preferably present in an amount of 0.5 to 3 mol, and particularly 0.8 to 2.5 mol, per 1 mol of the organosilicon compound containing primary and / or secondary amine groups and hydrolyzable groups. If the amount of the isocyanate compound containing photopolymerizable groups is too low, a large amount of the organosilicon compound containing primary and / or secondary amine groups and hydrolyzable groups will remain. While this does not affect the physical properties of the silane, it can lead to disadvantages such as reduced purity and decreased productivity. Conversely, if the amount is too high, the isocyanate compound containing photopolymerizable groups may polymerize and form a gel. Based on 100 parts by weight of the total usage of the polyimide precursor containing an ethylenically unsaturated group (A), the usage of the organosilicon compound (E) is 0.05 to 1.5 parts by weight, preferably 0.1 to 1.4 parts by weight, and more preferably 0.2 to 1.3 parts by weight. [ Azoles (F)] In addition, the photosensitive resin composition of the present invention preferably includes an azole compound (F). The azole compound (F) includes at least one selected from the group consisting of tetrazole and its derivatives, benzotriazole and its derivatives. When the photosensitive resin composition further includes an azole compound (F), the breaking strength of the photosensitive resin composition can be further improved. Examples of tetrazole and its derivatives include 1H-tetrazole, 5-methyl-1H-tetrazole, 5-phenyl-1H-tetrazole, 5-amino-1H-tetrazole, 1-methyl-1H-tetrazole, 5,5'-bis-1H-tetrazole, 1-methyl-5-ethyl-tetrazole, 1-methyl-5-mercapto-tetrazole, and 1-carboxymethyl-5-mercapto-tetrazole. 1H-tetrazole or 5-amino-1H-tetrazole is preferred. Examples of benzotriazole and its derivatives include benzotriazole, 1H-benzotriazole-1-acetonitrile, 1H-benzotriazole-5-carboxylic acid, 1H-benzotriazole-1-methanol, carboxybenzotriazole, and mercaptobenzoxazole. Preferred are benzotriazole, 1H-benzotriazole-5-carboxylic acid, and 1H-benzotriazole-1-methanol. The azole compound (F) can be used alone or in combination. Based on 100 parts by weight of the total amount of the ethylenically unsaturated group-containing polyimide precursor (A), the amount of the azole compound (F) used is generally 0.25 to 3.75 parts by weight, preferably 0.3 to 3 parts by weight, and more preferably 0.4 to 2.4 parts by weight. < Method for producing photosensitive resin composition The method for producing the photosensitive resin composition of the present invention is not particularly limited. Conventional mixing methods may be employed, such as first adding the ethylenically unsaturated polyimide precursor (A) to the solvent (D) at a temperature between 0°C and 200°C and continuously stirring with a stirring device until dissolved. The ethylenically unsaturated compound (B), photoinitiator (C), and organosilicon compound (E) are then added to the solvent (D) and stirred until uniformly mixed. Alternatively, the aforementioned compositions may be added simultaneously to the solvent and stirred until uniformly mixed. The additive (F) may be added after the ethylenically unsaturated polyimide precursor (A) is dissolved. However, the present invention is not limited thereto. < Cured film pattern and manufacturing method thereof The cured film pattern of the present invention is formed from the photosensitive resin composition of the present invention. The production method thereof will be described in detail below. The method for producing a cured film pattern of the present invention includes: a coating step of coating the photosensitive resin composition of the present invention on a substrate and drying it to form a coating film; a patterning step of exposing and developing the coating film to form a patterned resin film; and a heating step of heating the patterned resin film. In the coating step, examples of a method for coating the photosensitive resin composition of the present invention on the substrate include dipping, spraying, screen printing, and spin coating. Examples of the substrate include silicon wafers, metal substrates, and ceramic substrates. Since the photosensitive resin composition of the present invention can form a low-stress cured film, it is particularly suitable for silicon wafers with a diameter of 12 inches or more. After coating, the solvent can be removed by heating and drying to form a non-sticky coating film. The drying method during the coating step can be a device such as the DATAPLATE (Digital Hot Plate) manufactured by PMC. The drying temperature is preferably 90°C to 130°C, and the drying time is preferably 100 seconds to 400 seconds. In the patterning step, the formed coating film is irradiated with active light and then subjected to a development treatment, thereby obtaining a resin film having a desired pattern. Examples of the active light irradiated in the exposure treatment include i-rays, ultraviolet rays, extreme ultraviolet rays, visible light, electron beams, and X-rays, and i-rays are preferred. Examples of developing solutions used in the development process include flame-retardant solvents such as 1,1,1-trichloroethane; alkaline aqueous solutions such as aqueous sodium carbonate and tetramethylammonium hydroxide; good solvents such as N,N-dimethylformamide, dimethylsulfoxide, N,N-dimethylacetamide, N-methyl-2-pyrrolidone, cyclopentanone, γ-butyrolactone, and acetate; and mixtures of these good solvents with poor solvents such as lower alcohols, water, and aromatic hydrocarbons. After development, rinsing with a poor solvent may be performed as needed. In the heating step, a vertical diffusion furnace (manufactured by Koyo Lindberg) or the like can be used as a heating device for heat treatment. The heating temperature is preferably 80° C. to 400° C., and the heating time is preferably 5 minutes to 300 minutes. To promote the imidization of the polyimide precursor and convert it into polyimide, the heating temperature is preferably 100°C to 400°C, and even more preferably 200°C to 400°C. If the heating temperature is below 80°C, imidization may not proceed sufficiently, resulting in reduced heat resistance. If the heating temperature is higher than 400°C, the cured polyimide may deteriorate. The heating step can promote the imidization of the polyimide precursor in the photosensitive resin composition, thereby obtaining a cured film pattern containing the polyimide resin. The present invention will be further described with reference to the following examples. However, it should be understood that these examples are merely illustrative and should not be construed as limiting the scope of the present invention. < Example > [ Polyimide precursor containing ethylenically unsaturated groups (A) Synthesis example of The following describes an example of synthesizing a polyimide precursor (A) containing an ethylenically unsaturated group. 0.12 mol of the compound represented by formula (A1-1) (hereinafter referred to as a1-1-1) and 0.18 mol of 3,3',4,4'-diphenylether tetracarboxylic dianhydride (hereinafter referred to as a1-2-1) were dissolved in 368 g of N-methyl-2-pyrrolidone (hereinafter referred to as NMP) to obtain Solution 1. 0.024 mol of 1,3-bis(3-aminopropyl)-1,1,3,3-tetramethyldisiloxane (hereinafter referred to as a2-1-1) and 0.276 mol of 2,2'-bis(trifluoromethyl)-4,4'-diaminobiphenyl (hereinafter referred to as a2-2-1) were dissolved in 157 g of NMP to obtain Solution 2. Solution 2 was added dropwise to solution 1 at room temperature and stirred for 3 hours to obtain a polyimide precursor. Subsequently, 0.15 mol of 2-isocyanatoethyl methacrylate (hereinafter referred to as a3-1-1) was added and stirred at 70°C for 2 hours. The reaction solution was then added dropwise to distilled water. The precipitate was separated and collected, and then dried under reduced pressure. This process was repeated three times to obtain a polyimide precursor (A-1) containing ethylenically unsaturated groups. The formula is shown in Table 1. Synthesis Examples A-2 to A-4 and Comparative Synthesis Examples A'-1 and A'-4: Synthesis Examples A-2 to A-4, and Comparative Synthesis Examples A'-1 and A'-4, used the same production method as the production method for the polyimide precursor (A-1) containing an ethylenically unsaturated group in Synthesis Example A-1. The differences were that the types and amounts of raw materials in the polymers were varied from those in Comparative Synthesis Example A'-1, and that the crosslinkable unsaturated compound (a3) ​​was omitted in Comparative Synthesis Example A'-4. The formulations are shown in Table 1 and are not further detailed here. Synthesis Example A-5: 0.24 mol of 9,9-bis[4-(3,4-dicarboxyphenoxy)-3-methylphenyl]fluorene dianhydride (hereinafter referred to as a1-1-5) and 0.06 mol of pyromellitic dianhydride (hereinafter referred to as a1-2-2) were dissolved in 320 g of NMP to obtain Solution 1. 0.15 mol of 2,2'-dimethyl-4,4'-diaminobiphenyl (hereinafter referred to as a2-2-2) and 0.15 mol of p-phenylenediamine (hereinafter referred to as a2-2-3) were dissolved in 205 g of NMP to obtain Solution 2. Solution 2 was added dropwise to Solution 1 at room temperature and stirred for 3 hours to obtain a polyimide precursor. Next, 0.02 g of 3-methyl-1-phenyl-3-phosphine-1-oxide was added, and the mixture was stirred at 60°C for 5 minutes. Then, 0.255 mol of a3-1-5 was added, and the mixture was stirred at 60°C for 2 hours. The reaction solution was then added dropwise to distilled water, and the precipitate was separated and collected, followed by drying under reduced pressure. This process was repeated three times to obtain a polyimide precursor (A-5) containing ethylenically unsaturated groups. The formula of the product is shown in Table 1. Synthesis Examples A-6 to A-7 Synthesis Examples A-6 to A-7 use the same manufacturing method as the manufacturing method of the polyimide precursor (A-5) containing an ethylenically unsaturated group in Synthesis Example A-5. The difference is that Synthesis Examples A-6 to A-7 change the type and amount of raw materials in the polymer. The formula is shown in Table 1 and is not further described here. Synthesis Example A-8: 0.105 mol of a1-1-1 and 0.195 mol of a1-2-1 were dissolved in 368 g of NMP to obtain solution 1. 0.03 mol of a2-1-1 and 0.27 mol of a2-2-1 were dissolved in 157 g of NMP to obtain solution 2. Solution 2 was added dropwise to solution 1 at room temperature and stirred for 3 hours to obtain a polyimide precursor. Subsequently, 37 g of trifluoroacetic anhydride (such as the compound represented by formula (A3-2-a)) was added at 40°C and stirred at 40°C for 3 hours. Then, 0.12 mol of 2-hydroxyethyl methacrylate (hereinafter referred to as a3-2-1) was added and stirred at 40°C for 10 hours. Next, the reaction solution was added dropwise to distilled water. After separation and collection of the precipitate, the product was dried under reduced pressure and the process was repeated three times to obtain a polyimide precursor (A-8) containing an ethylenically unsaturated group. The formula of the precursor is shown in Table 2. Synthesis Examples A-9 to A-11 and Comparative Synthesis Example A'-2 Synthesis Examples A-9 to A-11 and Comparative Synthesis Example A'-2 used the same manufacturing method as the manufacturing method of the polyimide precursor (A-8) containing an ethylenically unsaturated group in Synthesis Example A-8. The difference is that Synthesis Examples A-9 to A-11 and Comparative Synthesis Example A'-2 changed the type and amount of raw materials in the polymer. The formula is shown in Table 2 and is not further described here. Synthesis Example A-12: 0.135 mol of a1-1-1, 0.12 mol of a1-2-1, and 0.045 mol of pyromellitic dianhydride (hereinafter referred to as a1-2-2) were dissolved in 368 g of NMP to obtain solution 1. 0.03 mol of a2-1-1, 0.12 mol of a2-2-1, and 0.15 mol of a2-2-2 were dissolved in 157 g of NMP to obtain solution 2. Solution 2 was added dropwise to solution 1 at room temperature and stirred for 3 hours to obtain a polyimide precursor. Subsequently, 0.03 g of triphenylphosphine (such as the compound represented by formula (A3-3-a)) was added at 40°C and stirred at 40°C for 5 minutes. Then, 0.18 mol of glycidyl methacrylate (hereinafter referred to as a3-3-1) was added and stirred at 100°C for 6 hours. Next, the reaction solution was added dropwise to distilled water. After separation and collection of the precipitate, the product was dried under reduced pressure and the process was repeated three times to obtain a polyimide precursor (A-12) containing an ethylenically unsaturated group. The formula of the precursor is shown in Table 2. Synthesis Examples A-13 to A-15 and Comparative Synthesis Example A'-3 Synthesis Examples A-13 to A-15 and Comparative Synthesis Example A'-3 used the same manufacturing method as the manufacturing method of the polyimide precursor containing an ethylenically unsaturated group (A-12) in Synthesis Example A-12. The difference is that Synthesis Examples A-13 to A-15 and Comparative Synthesis Example A'-3 changed the type and amount of raw materials in the polymer. The formula is shown in Table 2 and is not further described here. Table 1 Table 2 In addition, the compounds corresponding to the abbreviations in Tables 1 and 2 are shown below. [ Examples of photosensitive resin compositions ]The following describes an embodiment of the photosensitive resin composition. Example 1: 100 parts by weight of the ethylenically unsaturated polyimide precursor prepared in Synthesis Example A-1 (hereinafter referred to as A-1) and 100 parts by weight of N-methyl-2-pyrrolidone (NMP, hereinafter referred to as D-1) were weighed and stirred at room temperature until dissolved. Next, 1.0 parts by weight of the compound represented by formula (B-1-1) (hereinafter referred to as B-1-1), 20 parts by weight of dipentaerythritol hexamethacrylate (hereinafter referred to as B-2-1), 0.5 parts by weight of the oxime ester compound IRGACURE OXE-01 (hereinafter referred to as C-1), and 0.05 parts by weight of the organosilicon compound represented by formula (E-7) (hereinafter referred to as E-7) were added to prepare the photosensitive resin composition of Example 1. The formulation is shown in Table 3. Examples 2 to 16 and Comparative Examples 1 to 6 Examples 2 to 16 and Comparative Examples 1 to 6 use the same manufacturing method as the photosensitive resin composition of Example 1, with the difference being that the types and usage amounts of the raw materials in the photosensitive resin composition are changed. The formulations and evaluation results are shown in Tables 3 and 4, respectively, and are not further described here. In addition, the compounds corresponding to the abbreviations in Tables 3 and 4 are shown below. [ Comment Price method ] The photosensitive resin compositions of the embodiments and comparative examples were spin-coated on a 6-inch silicon wafer and tested with a high-pressure mercury lamp at 300 mJ / cm 2 Illumination exposure. Using a vertical diffusion furnace (manufactured by Koyo Lindberg), heat curing was performed at 350°C for 1 hour under a nitrogen atmosphere to obtain a 10 μm-thick cured film. The film was then immersed in a 2 wt% hydrofluoric acid solution for 1 minute and peeled from the silicon wafer. The cured film was cut into strips 1.0 cm wide and 10 cm long. The strips were stretched using a Tensilon RTM100 (manufactured by Orientech) at a rate of 50 mm / min (chuck spacing = 2 cm) at room temperature of 23°C and humidity of 45% RH. The tensile strength at break (unit: MPa) was measured. For each Example / Comparative Example, 10 samples were tested, and the average of the five highest values ​​was calculated and evaluated according to the following criteria. A higher tensile strength at break indicates better fracture strength. ◎: Tensile strength at breaking point ≧120 MPa ○: 120 MPa > tensile strength at breaking point ≧100 MPa △: 100 MPa > tensile strength at breaking point ≧80 MPa ╳: tensile strength at breaking point <80 MPa. Crack Resistance: The cured films obtained in the "Breaking Strength" evaluation method were diced from silicon wafers into 10 mm x 10 mm test pieces using a wafer dicing machine (DAD685, manufactured by DISCO, with a spindle rotation speed of 40,000 rpm and a cutting speed of 20 mm / s). These test pieces (10 each for each Example and Comparative Example) were subjected to a thermal cycle test (-25°C for 10 minutes, 125°C for 10 minutes). The number of cracks observed at the 1000th and 1500th cycles was examined using an optical microscope and evaluated according to the following criteria. ※: No cracks occurred at both the 1000th and 1500th cycles. ◎: No cracks occurred at the 1000th cycle, but one or more cracks occurred at the 1500th cycle. ○: If one or two cracks occurred at the 1000th cycle, the result at the 1500th cycle was disregarded. △: When 3-4 cracks occur after 1000 cycles, regardless of the result after 1500 cycles. ╳: When 5 or more cracks occur after 1000 cycles, regardless of the result after 1500 cycles. Chemical resistance is evaluated as the cured film obtained by the "breaking strength" method. The cured film was immersed in an organic solution (DMSO: 25% TMAH aqueous solution = 92:2) at 65°C for 60 minutes, and the residual film rate of the cured film was calculated (film thickness after immersion / film thickness before immersion x 100%). Among them, the higher the residual film rate, the better the chemical resistance. ◎: Residual film rate ≧ 95% ○: 95% > Residual film rate ≧ 90% △: 90% > Residual film rate ≧ 80% ╳: Residual film rate < 80% Table 3 Table 4 [Evaluation Results] As shown in Tables 3 and 4, the cured film patterns produced using the photosensitive resin compositions of Comparative Examples 5-6, which do not contain the specific organosilicon compound (E), exhibit inferior breaking strength, crack resistance, and chemical resistance compared to the cured film patterns produced using the photosensitive resin compositions containing the specific organosilicon compound (E) (Examples 1 to 16). Furthermore, even in Comparative Examples 1 to 4 in which the organosilicon compound (E) was added, since none of these Comparative Examples contained the specific polyimide precursor (A), the cured film patterns produced from the photosensitive resin compositions of Comparative Examples 1 to 4 exhibited significantly poor fracture strength, crack resistance, and chemical resistance. In addition, when the polyimide precursor (A) containing an ethylenically unsaturated group includes a structure represented by formula (A3-3) (Examples 1 to 7), the breaking strength of the photosensitive resin composition can be further improved. Furthermore, when the polyimide precursor (A) containing an ethylenically unsaturated group is synthesized from a tetracarboxylic dianhydride compound (a1-1) having a structure represented by formula (A1-1) (Examples 1 to 5, 8, 9, 12, and 13), the chemical resistance of the photosensitive resin composition can be further improved. Furthermore, when the polyimide precursor (A) containing an ethylenically unsaturated group is synthesized from a diamine compound (a2-1) having a structure represented by formula (A2-1) (Examples 1 to 4, 6, 8, 10, 12, and 14), the chemical resistance of the photosensitive resin composition can be further improved. In addition, when the photosensitive resin composition further includes a compound (B-1) containing an ethylenically unsaturated group (Examples 1 to 6, 8, 11, 12, 15, and 16), the breaking strength of the photosensitive resin composition can be further improved. In addition, when the organosilicon compound (E) includes structures represented by formulas (E2) to (E4) (Examples 3 to 11, 12 to 16), the crack resistance of the photosensitive resin composition can be further improved. Furthermore, when the organosilicon compound (E) includes a structure represented by formula (E2) (Examples 3 to 6, 8, 10, 13, and 14), the crack resistance of the photosensitive resin composition can be further improved. In addition, when the photosensitive resin composition further includes an azole compound (F) (Examples 2 to 7, 9, 12, 13, and 16), the crack resistance of the photosensitive resin composition can be further improved. Although the present invention has been disclosed above with reference to the embodiments, they are not intended to limit the present invention. Anyone with ordinary skill in the art may make slight changes and modifications without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention shall be determined by the scope of the appended patent applications. none none.

Claims

1. A photosensitive resin composition, comprising: Polyimide precursor containing vinyl unsaturated groups (A); A compound containing an ethylene unsaturated group (B); a photoinitiator (C); a solvent (D); and an organosilicone compound (E), wherein the polyimide precursor (A) comprises a structural unit as shown in formula (A-0), and the organosilicone compound (E) comprises a structure having a structure as shown in formula (E1), wherein in formula (A-0), R1 represents a tetravalent organogroup; R2 represents a divalent organogroup; A1 and A2 each independently represent OR3 or a monovalent organogroup containing an ethylene unsaturated group, and at least one of A1 and A2 is a monovalent organogroup containing an ethylene unsaturated group; R3 represents a hydrogen atom, an alkyl group having 1 to 20 carbon atoms, or a cycloalkyl group having 3 to 20 carbon atoms, wherein in formula (E1), Y represents an acrylyl group or a (meth)acryl group; X represents a hydrogen atom or a monovalent hydrocarbon group that may have substituents, wherein the -CH2- group contained in the monovalent hydrocarbon group may be replaced by -O-, -S-, -N- or -CO-; L represents a divalent hydrocarbon group that may have substituents, wherein the -CH2- group contained in the divalent hydrocarbon group may be replaced by -O-, -S-, -N- or -CO-; and W represents a divalent hydrocarbon group that may have substituents, wherein the -CH2- group contained in the divalent hydrocarbon group may be replaced by -O-, -S-, -N- or -CO-, wherein the organosilicone compound (E) has the structure of formula (E2), formula (E3) or formula (E4), wherein in formula (E2), formula (E3) and formula (E4), B is a hydrolyzable group, R14 each independently represents an alkyl group having 1 to 4 carbon atoms that may have substituents, n represents an integer from 1 to 3, and Z represents an alkyl group having 1 to 6 carbon atoms that may have substituents. R15 is a hydrogen atom or an alkyl group having 1 to 8 carbon atoms that may have substituents; R16 and R19 each independently represent the structure shown by formula (E21) or formula (E22); one of R17 and R18 is represented by formula (E21) or formula (E22); the other is a group, hydrogen atom or alkyl group having 1 to 8 carbon atoms that may have substituents represented by formula (E21) or formula (E22); in formula (E21) and formula (E22), R20 and R21 each independently represent a hydrogen atom or a methyl group, and m represents an integer from 1 to 4.

2. The photosensitive resin composition as claimed in claim 1, wherein in formula (A-0), the monovalent organic group containing an vinyl unsaturated group comprises at least one selected from the group consisting of structures shown in formulas (A3-1), (A3-2), and (A3-3) below, where L1 and L2 represent divalent straight-chain or branched alkyl groups having 1 to 12 carbon atoms, divalent cycloalkyl groups having 3 to 12 carbon atoms, or divalent aromatic cycloalkyl groups having 3 to 12 carbon atoms; L3 represents a single bond, divalent straight-chain or branched alkyl groups having 1 to 12 carbon atoms; L4 represents a hydrogen atom or a divalent alicyclic group having 3 to 12 carbon atoms bonded to L3; and R0 represents a hydrogen atom or a methyl group.

3. The photosensitive resin composition as claimed in claim 1, wherein the polyimide precursor (A) is obtained by reacting the polyimide precursor (A0) with an unsaturated compound (a-3) containing a crosslinking group.

4. The photosensitive resin composition as claimed in claim 3, wherein the polyimide precursor (A0) is obtained by reacting a mixture comprising a tetracarboxylic dianhydride compound (a-1) and a diamine compound (a-2).

5. The photosensitive resin composition as claimed in claim 4, wherein the tetracarboxylic dianhydride compound (a-1) comprises a tetracarboxylic dianhydride compound (a-1-1), the tetracarboxylic dianhydride compound (a-1-1) comprising at least one selected from the group consisting of compounds represented by formulas (A1-1), (A1-2), and (A1-3) below, wherein in formula (A1-1) formula (A1-2) formula (A1-3) formula (A1-3), each of the k R8s independently represents a hydrogen atom, an alkyl group having 1 to 6 carbon atoms, or a monocyclic or condensed aromatic group having 6 to 14 carbon atoms; k represents 1 or 2.

6. The photosensitive resin composition as claimed in claim 4, wherein the diamine compound (a-2) comprises a diamine compound (a-2-1) having a structure as shown in the following formula (A2-1): In formula (A2-1), R9, R10, R11, and R12 each independently represent a monovalent hydrocarbon group, and R9, R10, R11, and R12 may be the same or different; R13 each independently represents a divalent hydrocarbon group, and a plurality of R13 may be the same or different; n represents an integer from 1 to 10.

7. The photosensitive resin composition as claimed in claim 3, wherein the unsaturated compound (a-3) containing a crosslinking group comprises at least one selected from the group consisting of unsaturated compounds containing isocyanate groups, unsaturated compounds containing hydroxyl groups, and unsaturated compounds containing epoxy groups.

8. The photosensitive resin composition as claimed in claim 1, wherein the compound (B) containing an vinyl unsaturated group comprises a compound (B-1) having a structure as shown in the following formula (B1): In formula (B1), R4 represents a divalent straight-chain or branched aliphatic group having 1 to 12 carbon atoms, a divalent alicyclic group having 3 to 12 carbon atoms, a divalent aromatic cyclic group, or [-(CH2)gO-(CH2)h-]i, wherein g and h each independently represent an integer from 1 to 10; i represents an integer from 1 to 5; R5 represents a divalent straight-chain or branched aliphatic group having 1 to 10 carbon atoms, a divalent alicyclic group having 3 to 10 carbon atoms, a divalent aromatic cyclic group, or [-(CH2)pO-(CH2)q-]r, wherein p and q each independently represent an integer from 1 to 10; r represents an integer from 1 to 5; R6 and R7 each independently represent a hydrogen atom or a methyl group.

9. The photosensitive resin composition as claimed in claim 1, wherein the organosilicone compound (E) has a structure as described in formula (E2).

10. The photosensitive resin composition of claim 1 further comprises an azole compound (F), and the azole compound (F) comprises at least one selected from the group consisting of tetrazolium and its derivatives, benzotriazole and its derivatives.

11. The photosensitive resin composition as claimed in claim 1, wherein the amount of the polyimide precursor (A) is 100 parts by weight, the amount of the compound (B) containing an ethylene unsaturated group is from 15 parts by weight to 100 parts by weight, the amount of the photoinitiator (C) is from 0.05 parts by weight to 5.5 parts by weight, the amount of the solvent (D) is from 100 parts by weight to 800 parts by weight, and the amount of the organosilicon compound (E) is from 0.05 parts by weight to 1.5 parts by weight.

12. The photosensitive resin composition as claimed in claim 5, wherein the total amount of the tetracarboxylic dianhydride compound (a-1) used is 100 mol%, and the amount of the tetracarboxylic dianhydride compound (a-1-1) used is from 15 mol% to 80 mol.

13. The photosensitive resin composition as claimed in claim 6, wherein the total amount of the diamine compound (a-2) used is 100 mol%, and the amount of the diamine compound (a-2-1) used is from 2 mol% to 25 mol.

14. The photosensitive resin composition as claimed in claim 4, wherein the amount of the tetracarboxylic acid dianhydride compound (a-1) used is 100 mol%, and the amount of the unsaturated compound (a-3) containing the crosslinking group used is from 25 mol% to 100 mol.

15. The photosensitive resin composition as claimed in claim 10, wherein, Based on the amount of the polyimide precursor (A) used being 100 parts by weight, the amount of the azole compound (F) used being from 0.25 parts by weight to 3.75 parts by weight.

16. A hardened film pattern formed from a photosensitive resin composition as described in any one of claims 1 to 15.

17. A method for manufacturing a hardened film pattern, comprising: The coating step involves coating the photosensitive resin composition as described in any one of claims 1 to 15 onto a substrate and drying it to form a coating film. The patterning step involves exposing and developing the coating to form a patterned resin film. The process includes a heating step, in which the patterned resin film is subjected to heat treatment.