Display device

TWI938711BActive Publication Date: 2026-09-11LG DISPLAY CO LTD
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Patent Information

Application Number
TW113147484
Authority / Receiving Office
TW · TW
Patent Type
Patents
Current Assignee / Owner
Priority Date
2024-11-11
Filing Date
2024-12-06
Publication Date
2026-09-11
Estimated Expiration
2044-12-05

AI Technical Summary

Technical Problem

Display devices with integrated optoelectronic devices, such as cameras and sensors, face issues of reduced display area due to bezel widening or notches, and are susceptible to moisture penetration when these devices are placed within the display area.

Method used

A display device design that incorporates a camera hole within the display area with a moisture-proof structure, including a dam and multiple insulating films, to prevent moisture ingress while maintaining the display area integrity.

Benefits of technology

Prevents moisture-related defects in the display device, ensuring effective operation and longevity of light-emitting elements by sealing the optoelectronic components within the display area.

✦ Generated by Eureka AI based on patent content.

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Patent Text Reader

Abstract

This disclosed embodiment relates to a display device, and more particularly to a display device that can effectively prevent external moisture from seeping into the display area through a camera hole by means of a display area containing a light-emitting element. The display area includes a light-emitting element, a camera hole placed in the display area, and a first non-display area located between the display area and the camera hole, and includes a moisture-proof structure placed in the first non-display area.
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Description

Technical Field

[0001] This disclosed embodiment relates to a display device. Prior Technology

[0002] With the development of technology, display devices, in addition to image display functions, can also provide capture functions and various detection functions. For this purpose, display devices include optoelectronic devices (also known as light receiving devices or sensors), such as cameras and detection sensors.

[0003] Since optoelectronic devices receive light from the front of the display device, they should be installed in locations where they are easily exposed to light. Consequently, cameras (camera lenses) and detection sensors may be exposed on the front surface of the display device. Therefore, the bezels of the display panel may be widened or a notch may be formed in the display area of ​​the display panel to house the camera or detection sensor.

[0004] When a bezel is widened or a notch is created on the front surface of a display panel, the display area used to display images on the display panel is reduced. Summary of the Invention

[0005] In the field of display technology, researchers are exploring techniques for equipping optoelectronic devices such as cameras and sensors without reducing the display area of ​​the display panel. Therefore, the inventors of this disclosure provide an embodiment of a display device in which the optoelectronic device can receive light normally even when it is placed within the display area but not within the surrounding bezel area. However, in such a display device, the portion containing the optoelectronic device is susceptible to moisture penetration from the outside. Therefore, the inventors of this disclosure further provide various embodiments of a display device capable of preventing moisture penetration from the outside of the display device while placing the optoelectronic device within the display area.

[0006] The present disclosure provides a display device that includes a camera hole disposed in a display area and a first non-display area located between the display area and the camera hole and including a moisture-proof structure disposed in a first non-display area.

[0007] The present disclosure provides a display device that can effectively prevent moisture from seeping in from the outside of the display device by including a moisture-proof structure.

[0008] This disclosed embodiment provides a display device comprising a substrate, a dam, a break portion, multiple insulating films, and a moisture-proof structure. The substrate may include a display area, a camera aperture, and a first non-display area. Multiple light-emitting elements, including a light-emitting layer, may be located in the display area. The camera aperture may be located within the display area. The first non-display area may be located between the display area and the camera aperture. The dam may be located within the first non-display area. The break portion may be located within the first non-display area. A plurality of insulating films may be disposed on the substrate and located below the multiple light-emitting elements. The moisture-proof structure may be disposed within the first non-display area. The moisture-proof structure may include an undercut area of ​​one of the plurality of insulating films.

[0009] The disclosed embodiments provide a display device comprising: a display area and a non-display area adjacent to the display area; a camera aperture adjacent to the non-display area, the camera aperture being spaced apart from the display area in a planar viewing angle; a light-emitting element configured to overlap with the display area in a planar viewing angle; a dam structure located between the camera aperture and the display area in a planar viewing angle; and a moisture-proof structure adjacent to the dam structure, the moisture-proof structure comprising a plurality of metal layers.

[0010] In the display device according to the embodiments of the present disclosure, the display device may further include an auxiliary metal layer disposed below a plurality of metal layers of the first moisture-proof structure.

[0011] According to the embodiments disclosed herein, a display device can be provided that is able to prevent defects caused by moisture seeping from the outside of the display device through a moisture-proof structure comprising a first non-display area.

[0012] According to embodiments disclosed herein, a display device can be provided that can achieve low-power operation by preventing defects in the light-emitting elements or shortening the lifespan of the light-emitting elements due to moisture seeping from the outside of the display device. Simple Explanation of the Diagram

[0013] The above, as well as other objects, features, and advantages of this disclosure, will become more clearly understood from the following detailed description in conjunction with the figures, wherein:

[0014] Figure 1 is a plan view illustrating a display device according to an embodiment of the present disclosure;

[0015] Figure 2 is a schematic diagram illustrating the system configuration of a display device according to an embodiment of the present disclosure;

[0016] Figure 3 is a schematic diagram of the configuration of a display device according to an embodiment of the present disclosure and an equivalent circuit diagram of a sub-pixel;

[0017] Figure 4 is an enlarged schematic diagram of region A in Figure 1;

[0018] Figures 5, 6, and 7 are schematic cross-sectional views illustrating a display device according to an embodiment of the present disclosure;

[0019] Figures 8 and 9 are cross-sectional schematic diagrams illustrating the moisture-proof structure of the display device according to an embodiment of the present disclosure;

[0020] Figures 10 and 11 are schematic cross-sectional views illustrating a display device according to an embodiment of the present disclosure;

[0021] Figure 12 is a cross-sectional schematic diagram showing the moisture-proof structure of the display device shown in Figures 10 and 11;

[0022] Figure 13 is a cross-sectional schematic diagram showing a display device according to an embodiment of the present disclosure;

[0023] Figure 14 is a cross-sectional schematic diagram of the moisture-proof structure shown in Figure 13;

[0024] Figures 15, 16, and 17 are schematic cross-sectional views illustrating a display device according to an embodiment of the present disclosure;

[0025] Figures 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, and 29 are cross-sectional schematic diagrams of the moisture-proof structure of the display device shown in Figures 15, 16, and 17;

[0026] Figure 30 is a schematic cross-sectional view of a display device according to an embodiment of the present disclosure; and

[0027] Figures 31, 32, 33, 34, 35 and 36 are cross-sectional schematic diagrams of the moisture-proof structure of the display device shown in Figure 30. Implementation

[0028] In the following description of the examples or embodiments of this disclosure, reference will be made to the drawings, in which specific examples or embodiments that can be implemented are shown by way of example, and the same reference numerals and symbols may be used to designate the same or similar components even if they are shown in different drawings. Furthermore, in the following description of the examples or embodiments of this disclosure, detailed descriptions of well-known functions and components included herein will be omitted when it is determined that the description may make the subject matter of some embodiments of this disclosure considerably unclear. Unless these terms are used with the term "only," terms such as "comprising," "having," "including," "constituting," "made up of," and "composed of" as used herein are generally intended to allow for the addition of additional components. Unless the context clearly indicates otherwise, the singular forms are intended to include the plural forms as used herein.

[0029] Designations such as "first," "second," "A," "B," "(A)," and "(B)" may be used to describe components of the invention. Each of these terms is not used to define the nature, order, or number of components, but only to distinguish one component from another.

[0030] When it is mentioned that the first element is "connected or coupled" to the second element, or "connected or overlapped" with the second element, it should be interpreted as meaning that the first element can not only be "directly connected or coupled" to the second element or "directly contact or overlap" with the second element, but a third element can be "inserted" between the first and second elements, or the first and second elements can be "connected or coupled" to each other through a fourth element, or "contact or overlap" with each other, etc. Here, the second element can be included in at least one of two or more elements that are "connected or coupled", "contact or overlap" with each other.

[0031] When using terms such as “after,” “beside,” “following,” and “before” to describe time flow relationships related to components, operating methods, and manufacturing methods, it may include discontinuous relationships unless the terms “immediately” or “directly” are used.

[0032] The shapes, sizes, dimensions (e.g., length, width, height, thickness, radius, diameter, area, etc.), scales, angles, and digits disclosed in the drawings illustrating embodiments of this disclosure are merely examples, and this disclosure is not limited thereto.

[0033] For ease of description, the dimensions of each component shown in the figures include size and thickness, and this disclosure is not limited to the size and thickness of the components shown in the figures. However, it should be noted that the relative dimensions of the relative sizes, positions and thicknesses of the components shown in the various figures presented herein are part of this disclosure.

[0034] Furthermore, when referring to any size, relative size, etc., it should be assumed that the numerical values ​​or corresponding information of the component or feature (e.g., level, range, etc.) include the range of tolerances or errors that may be caused by various factors (e.g., process factors, internal or external shocks, noise, etc.) even without a specified description. Additionally, the term "may" fully encompasses all the meanings of the term "can".

[0035] The various embodiments disclosed herein will now be described in detail with reference to the accompanying drawings.

[0036] Figure 1 is a plan view showing a display device 100 according to an embodiment of the present disclosure.

[0037] Referring to FIG1, the display device 100 may include a display area DA and a non-display area NDA. The non-display area NDA may include a second non-display area NDA2 surrounding the display area DA. The display area DA is the area for displaying an image, and a plurality of light-emitting elements may be located in the display area DA. The second non-display area NDA2 may be a border area located outside the display area DA of the display device 100. In the second non-display area NDA2, driving circuits for driving the plurality of light-emitting elements located in the display area DA, such as data driving circuits and gate driving circuits, may be provided, and signal lines such as data lines and gate lines may be provided.

[0038] The display device 100 may include a display area DA, a camera aperture CH disposed in the display area DA, and a first non-display area NDA1 disposed between the display area DA and the camera aperture CH. Various optoelectronic devices provided in the display device 100 may be disposed in the camera aperture CH. For example, the camera may be disposed below the substrate of the display device 100 and may be positioned to overlap with the camera aperture CH in a planar viewing angle. In the display device 100 according to the embodiment of this disclosure, since the camera aperture CH is disposed in the display area DA, the area of ​​the second non-display area NDA2 (i.e., the border area) may be reduced, and the display area DA may be increased or maximized.

[0039] The camera hole CH can be a single hole as shown in Figure 1, but this disclosure is not limited to this and the camera hole CH can be set in various ways. For example, one or two holes can be set in the display area DA, and a camera can be set in the first hole, and a distance sensor, a face recognition sensor or another camera can be set in the second hole.

[0040] The first non-display area NDA1 may surround the camera hole CH. For example, the first non-display area NDA1 may be located in the peripheral portion of the camera hole CH, and may surround the entire peripheral portion or part of the peripheral portion of the camera hole CH. Signal lines for transmitting signals to the light-emitting elements located in the display area DA may be located in the first non-display area NDA1. The first non-display area NDA1 may be referred to as the border area of ​​the camera hole CH, and may be referred to as, for example, a variable border area.

[0041] Figure 2 is a schematic diagram illustrating the system configuration of a display device 100 according to an embodiment of this disclosure. The same or similar content described with reference to Figure 1 will not be repeated or simply described in the following description.

[0042] Referring to FIG2, the display device 100 may include a display panel 110 and a display driving circuit for displaying images.

[0043] The display driver circuit is a circuit used to drive the display panel 110 and may include a data driver circuit DDC, a gate driver circuit GDC, and a display controller D-CTR.

[0044] The display panel 110 may include a display area DA for displaying images and a second non-display area NDA2 for not displaying images. The second non-display area NDA2 may be an outer area of ​​the display area DA and is referred to as a border area. All or part of the second non-display area NDA2 may be an area visible from the front surface of the display device 100, or it may be a curved area that is not visible from the front surface of the display device 100.

[0045] The display panel 110 may include a camera hole CH located in the display area DA and a first non-display area NDA1 located between the display area DA and the camera hole CH.

[0046] The display panel 110 may include a substrate SUB and a plurality of sub-pixels SP disposed on the substrate SUB. The display panel 110 may also include various types of signal lines for driving the plurality of sub-pixels SP.

[0047] The display device 100 according to the embodiments of this disclosure may be a liquid crystal display device or a self-emissive display device in which the display panel 110 emits its own light. When the display device 100 according to the embodiments of this disclosure is a self-emissive display device, each of the plurality of sub-pixels SP may include a light-emitting element. For example, the display device 100 according to the embodiments of this disclosure may be an organic light-emitting diode display, wherein the light-emitting element is implemented as an organic light-emitting diode (OLED). As another example, the display device 100 according to the embodiments of this disclosure may be an inorganic light-emitting display device, wherein the light-emitting element is implemented as an inorganic material-based light-emitting diode. As another example, the display device 100 according to the embodiments of this disclosure may be a quantum dot display device, wherein the light-emitting element is implemented as a quantum dot, and a quantum dot is a self-emissive semiconductor crystal.

[0048] The structure of each of the multiple sub-pixels SP can vary depending on the type of display device 100. For example, when the display device 100 is a self-emissive display device in which the sub-pixels SP emit their own light, each sub-pixel SP may include a self-emissive light-emitting element, one or more transistors, and one or more capacitors.

[0049] For example, various types of signal lines may include multiple data lines DL for transmitting data signals (also known as data voltages or image signals) and multiple gate lines GL for transmitting gate signals (also known as scan signals).

[0050] Multiple data lines DL and multiple gate lines GL can intersect each other. Each of the multiple data lines DL can be configured to extend in a first direction. Each of the multiple gate lines GL can be configured to extend in a second direction. Here, the first direction can be a row direction, and the second direction can be a column direction.

[0051] The data drive circuit DDC drives multiple data lines DL and can output data signals to multiple data lines DL. The gate drive circuit GDC drives multiple gate lines GL and can output gate signals to multiple gate lines GL.

[0052] The display controller D-CTR is a device used to control the data drive circuit DDC and the gate drive circuit GDC, and can control the driving timing of multiple data lines DL and multiple gate lines GL.

[0053] The display controller D-CTR can provide a data drive control signal DCS to the data drive circuit DDC to control the data drive circuit DDC, and can also provide a gate drive control signal GCS to the gate drive circuit GDC to control the gate drive circuit GDC.

[0054] The display controller D-CTR can receive input image data from the host system H-SYS and provide digital image data (Data) to the data drive circuit DDC based on the input image data.

[0055] The data drive circuit DDC can receive digital image data (Data) from the display controller D-CTR, convert the received digital image data (Data) into analog data signals, and output the analog data signals to multiple data lines DL.

[0056] The gate drive circuit GDC can receive the first gate voltage corresponding to the turn-on level voltage, the second gate voltage corresponding to the turn-off level voltage, and various gate drive control signals GCS, generate gate signals, and provide the generated gate signals to multiple gate lines GL.

[0057] For example, the data drive circuit DDC can be connected to the display panel 110 via tape automated bonding (TAB), or to the bonding pads of the display panel 110 via chip on glass (COG) or chip on panel (COP), or it can be implemented and connected to the display panel 110 via chip on film (COF).

[0058] The gate drive circuit GDC can be connected to the display panel 110 via tape automated bonding (TAB), or to the bonding pads of the display panel 110 via chip-on-glass (COG) or chip-on-panel (COP) methods, or to the bonding pads of the display panel 110 via chip-on-film (COF) methods. In the second non-display area NDA2 of the display panel 110, the gate drive circuit GDC can be formed as a gate-in-panel (GIP) type. The gate drive circuit GDC can be disposed on the substrate or connected to the substrate. In other words, a GIP-type gate drive circuit GDC can be disposed in the second non-display area NDA2 of the substrate. Chip-on-glass (COG) or chip-on-film (COF) type gate drive circuit GDCs can be connected to the substrate.

[0059] Simultaneously, at least one of the data driving circuit DDC and the gate driving circuit GDC can be placed in the display area DA of the display panel 110. For example, at least one of the data driving circuit DDC and the gate driving circuit GDC can be configured not to overlap with the sub-pixel SP or to overlap with all or part of the sub-pixel SP.

[0060] The data driving circuit DDC can be connected to one side (e.g., the top or bottom) of the display panel 110. Depending on the driving scheme or panel design, the data driving circuit DDC can be connected to both sides (e.g., the top and bottom) of the self-emissive display panel 110, or to two or more of the four sides of the self-emissive display panel 110.

[0061] The gate drive circuit GDC can be connected to one side of the display panel 110 (e.g., the left or right side). Depending on the drive scheme or panel design, the gate drive circuit GDC can be connected to both sides of the display panel 110 (e.g., the left and right sides), or to two or more of the four sides of the display panel 110.

[0062] The display controller D-CTR can be implemented as a separate component from the data drive circuit DDC, or the display controller D-CTR and the data drive circuit DDC can be integrated into an integrated circuit (IC).

[0063] The Display Controller (D-CTR) can be a timing controller used in common display technologies, or a control device that has both timing controller and other control functions, or a control device other than a timing controller, or a circuit within a control device. The Display Controller (D-CTR) can be implemented as various circuits or electronic components, such as integrated circuits (ICs), field-programmable gate arrays (FPGAs), application-specific integrated circuits (ASICs), or processors.

[0064] The display controller D-CTR can be mounted on a printed circuit board or flexible printed circuit and can be connected to the data drive circuit DDC and the gate drive circuit GDC through the printed circuit board or flexible printed circuit.

[0065] The display controller D-CTR can transmit signals to or receive signals from the data drive circuit DDC according to one or more predetermined interfaces. For example, these predetermined interfaces may include a low voltage differential signaling (LVDS) interface, an embedded clock point-point interface (EPI), or a serial peripheral interface (SPI).

[0066] In order to provide both image display function and touch sensing function, the display device 100 according to the present disclosure embodiment may include a touch sensor and a touch sensing circuit for detecting the occurrence of touch or the touch position of touch objects such as fingers or pens by sensing the touch sensor.

[0067] The touch sensing circuit may include a touch driving circuit TDC for driving and sensing the touch sensor and for generating and outputting touch sensing data; and a touch controller T-CTR for using the touch sensing data to detect whether a touch has occurred or to detect the touch position.

[0068] The touch sensor may include a plurality of touch electrodes. The touch sensor may further include a plurality of touch lines for electrically connecting the plurality of touch electrodes to the touch driving circuit TDC.

[0069] A touch sensor in the form of a touch panel can be located outside the display panel 110 or inside the display panel 110. When the touch panel is located outside the display panel 110 in the form of a touch panel, it is referred to as an external touch panel. When the touch sensor is an external touch panel, the touch panel and the display panel 110 can be manufactured separately or combined during assembly. An external touch panel may include a touch panel substrate and a plurality of touch electrodes on the touch panel substrate.

[0070] When the touch sensor is present inside the display panel 110, during the manufacturing process of the display panel 110, the touch sensor can be formed on the substrate SUB together with the signal lines and electrodes related to display driving.

[0071] The touch driving circuit TDC can provide touch driving signals to at least one of a plurality of touch electrodes and can sense at least one of the plurality of touch electrodes to generate touch sensing data.

[0072] Touch sensing circuitry can perform touch sensing in either self-capacitance sensing or mutual-capacitance sensing schemes.

[0073] When a touch sensing circuit performs touch sensing in a self-capacitance sensing scheme, it can perform touch sensing based on the capacitance between each touch electrode and the touch object (e.g., a finger or pen). According to the self-capacitance sensing scheme, each of the plurality of touch electrodes can simultaneously serve as both a driving touch electrode and a sensing touch electrode. The touch driving circuit TDC can drive all or some of the plurality of touch electrodes and sense all or some of the plurality of touch electrodes.

[0074] When a touch sensing circuit performs touch sensing using a mutual capacitance sensing scheme, it can perform touch sensing based on the capacitance between the touch electrodes. According to the mutual capacitance sensing scheme, multiple touch electrodes are divided into driving touch electrodes and sensing touch electrodes. The touch driving circuit (TDC) can drive the driving touch electrodes and sense the sensing touch electrodes.

[0075] The touch driver circuit TDC and touch controller T-CTR included in the touch sensing circuit can be implemented as independent devices or as a single device. The touch driver circuit TDC and data driver circuit DDC can be implemented as independent devices or as a single device.

[0076] The display device 100 may further include a power supply circuit for providing various types of power to the display driver integrated circuit and / or touch sensing circuit.

[0077] According to the embodiments disclosed herein, the display device 100 may be a mobile terminal, such as a smartphone or tablet computer, or a monitor or television (TV) of various sizes, but is not limited thereto, and may be a display of various types and sizes capable of displaying information or images.

[0078] Figure 3 is a schematic diagram of the configuration of a display device according to an embodiment of the present disclosure and an equivalent circuit diagram of a sub-pixel. In the following description, the same or similar elements as those described with reference to Figures 1 and 2 will not be described repeatedly or will only be briefly described.

[0079] Referring to Figure 3, a plurality of subpixels SP can be provided in the display area DA of the display device. The plurality of subpixels SP can be provided in the display area DA, but may not be provided in the first non-display area and the camera hole.

[0080] Each of the plurality of sub-pixels SP may include a light-emitting element ED and a sub-pixel circuit unit configured to drive the light-emitting element ED.

[0081] The sub-pixel circuit unit may include a driving transistor T1 for driving the light-emitting element ED, a scanning transistor T2 for transmitting the data voltage VDATA to the first node N1 of the driving transistor T1, and a storage capacitor Cst for maintaining a constant voltage during a frame.

[0082] The driving transistor T1 may include a first node N1 to which a data voltage can be applied, a second node N2 electrically connected to the light-emitting element ED, and a third node N3 to which a driving voltage VDD is applied from the driving voltage line DVL. The first node N1 in the driving transistor T1 can be a gate node, the second node N2 can be a source node or a drain node, and the third node N3 can be a drain node or a source node. For ease of description, in the following example of the driving transistor T1, the first node N1 is a gate node, the second node N2 is a source node, and the third node N3 is a drain node.

[0083] The light-emitting element ED may include an anode electrode AE, a light-emitting layer EL, and a cathode electrode CE. The anode electrode AE ​​may be a pixel electrode disposed in each sub-pixel SP and electrically connected to the second node N2 of the driving transistor T1 of each sub-pixel SP. The cathode electrode CE may be a common electrode disposed in multiple sub-pixels SP, and a base voltage VSS may be applied thereto.

[0084] For example, the anode electrode AE ​​can be a pixel electrode, and the cathode electrode CE can be a common electrode. Conversely, the anode electrode AE ​​can be a common electrode, and the cathode electrode CE can be a pixel electrode. Below, for ease of description, we assume that the anode electrode AE ​​is a pixel electrode and the cathode electrode CE is a common electrode.

[0085] The light-emitting element (ED) may have a predetermined light-emitting area. The light-emitting area of ​​the ED may be defined as the area where the anode electrode AE, the light-emitting layer EL, and the cathode electrode CE overlap.

[0086] For example, the light-emitting element (ED) can be an organic light-emitting diode (OLED), an inorganic light-emitting diode, or a quantum dot light-emitting element. When the light-emitting element (ED) is an organic light-emitting diode, the light-emitting layer (EL) of the ED can include an organic light-emitting layer comprising organic materials.

[0087] The scanning transistor T2 can be turned on / off by the scanning signal SCAN. This scanning signal is a gate signal and is applied through the gate line GL. The scanning transistor T2 is electrically connected between the first node N1 of the driving transistor T1 and the data line DL.

[0088] The storage capacitor Cst can be electrically connected between the first node N1 and the second node N2 of the driving transistor T1.

[0089] As shown in Figure 3, the sub-pixel circuit unit can have a 2T (transistor) 1C (capacitor) structure, which includes two transistors, a driving transistor T1 and a scanning transistor T2, and a capacitor Cst. In some cases, each sub-pixel SP can contain one or more transistors or one or more capacitors.

[0090] The capacitor Cst can be intentionally designed as an external capacitor located outside the driving transistor T1, but this capacitor is not a parasitic capacitor (e.g., Cgs or Cgd) that can exist as an internal capacitor between the first node N1 and the second node N2 of the driving transistor T1. Each of the driving transistor T1 and the scanning transistor T2 can be an N-type transistor or a P-type transistor.

[0091] Since the circuit elements in each sub-pixel SP (especially organic light-emitting diodes (OLEDs) containing organic materials implemented as light-emitting elements EDs) are susceptible to external moisture or oxygen, an encapsulation layer ENCAP can be provided on the display panel 110 to prevent external moisture or oxygen from penetrating into the circuit elements (especially the light-emitting elements EDs). The encapsulation layer ENCAP can be configured to cover the light-emitting elements EDs.

[0092] Figure 4 is an enlarged schematic diagram of region A in Figure 1. Region A in Figure 1 is one of the display regions DA, and may include the camera hole CH and its surrounding area. In the following description, the same or similar elements as those described with reference to Figures 1 to 3 will not be described again or will only be briefly described.

[0093] Referring to Figure 4, the camera hole CH can be placed within the display area DA. For example, the camera hole CH can be placed in the display area DA in an island-like form, and the display area DA can surround this camera hole CH.

[0094] The first non-display area NDA1 can surround the camera hole CH. For example, the first non-display area NDA1 can be placed between the display area DA and the camera hole CH. The first non-display area NDA1 is a non-display area placed in the display area DA, and it can be a non-display area placed around the camera hole CH.

[0095] A dammed DAM (also referred to as a dam structure) may be placed in the first non-display area NDA1. A dammed DAM can refer to a structure used to control the flow rate of one of the plurality of insulating films contained in a display device. For example, a dammed DAM may be a structure used to control the flow rate of an organic insulating film on a light-emitting element placed on a substrate. More specifically, the insulating film may be an organic layer that is part of an encapsulation layer encapsulating multiple light-emitting elements. Figure 4 illustrates an embodiment with only one dammed DAM in the first non-display area NDA1, but this disclosure is not limited thereto, and embodiments may also include two or more dams placed in the first non-display area NDA1.

[0096] A dammed DAM can be positioned to surround the camera aperture CH. For example, the dammed DAM can have a closed curve shape that completely surrounds the camera aperture CH. With the dammed DAM positioned to surround the camera aperture CH, the flow rate of the organic layer at the boundary of the peripheral portion of the camera aperture CH, which is part of the encapsulation layer, can be effectively controlled.

[0097] The disconnected portion area STA can be placed in the first non-display area NDA1. The disconnected portion area STA can refer to an area in which multiple disconnected portions are placed. The disconnected portions are structures used to prevent external moisture from penetrating into the display area DA through the camera aperture CH, and can refer to a structure that blocks the moisture penetration path by cutting the cathode electrode CE formed completely deposited on the organic layer of the substrate SUB and / or the light-emitting element.

[0098] The disconnected region STA can include an internal disconnected region ISTA and an external disconnected region OSTA. An internal disconnected region ISTA can be a disconnected region located inside the dam DAM relative to the display area DA. An internal disconnected region ISTA can be a region containing multiple disconnected parts located inside the dam DAM relative to the display area DA. An external disconnected region OSTA can be a disconnected region located outside the dam DAM relative to the display area DA. An external disconnected region OSTA can be a region containing multiple disconnected parts located outside the dam DAM relative to the display area DA.

[0099] A moisture-proof structure can be placed in the disconnected area STA. Because the moisture-proof structure is placed in the disconnected area STA, it can effectively prevent external moisture from penetrating through the camera aperture CH into the light-emitting element placed in the display area DA. The moisture-proof structure can be located in the external disconnected area OSTA and / or the internal disconnected area ISTA. In this disclosure, the moisture-proof structure placed in the external disconnected area OSTA can be referred to as the external moisture-proof structure, and the moisture-proof structure placed in the internal disconnected area ISTA can be referred to as the internal moisture-proof structure.

[0100] The first non-display area NDA1, surrounding the internally disconnected area ISTA and located adjacent to the display area DA, can be referred to as the variable border area VBA. Multiple signal lines used to transmit multiple signals to multiple light-emitting elements located in the display area DA can be placed within the variable border area VBA.

[0101] Figure 5 is a cross-sectional schematic diagram illustrating a display device according to an embodiment of the present disclosure. More specifically, Figure 5 is a cross-sectional schematic diagram of portion AB in Figure 4. In the following description, the same or similar elements as those described with reference to Figures 1 to 4 will not be described repeatedly or will only be briefly described.

[0102] Referring to Figure 5, when viewed in a vertical structure, the display device may include a transistor forming portion, a light-emitting element forming portion, and an encapsulation portion.

[0103] The transistor forming portion may include a substrate SUB, a first buffer layer BUF1 on the substrate SUB, and various transistors, storage capacitors, and various electrodes or signal lines formed on the first buffer layer BUF1.

[0104] The substrate SUB may contain an insulating material. For example, the substrate SUB may contain glass or plastic. The substrate SUB may have a single-layer or multi-layer structure. For example, the substrate SUB may have a multi-layer structure. The substrate SUB may contain a first substrate SUB1 and a second substrate SUB2. An interlayer film IPD may be present between the first substrate SUB1 and the second substrate SUB2. The first substrate SUB1 and the second substrate SUB2 may contain the same material. For example, the first substrate SUB1 and the second substrate SUB2 may be polyimide (PI) substrates. The interlayer film IPD may be a single-layer or multi-layer inorganic film of silicon nitride (SiNx) or silicon oxide (SiOx). Because an interlayer film IPD is provided between the first substrate SUB1 and the second substrate SUB2, moisture components can be prevented from penetrating through the underlying first substrate SUB1 into the transistor, thereby enhancing the reliability of the display device.

[0105] The first buffer layer BUF1 can be a single-membrane or multi-membrane structure. When the first buffer layer BUF1 is formed as a multi-membrane structure, the first buffer layer BUF1 can include multiple buffer layers MBUF and an active buffer layer ABUF.

[0106] Various transistors, storage capacitors, and various electrodes or signal lines can be formed on the first buffer layer BUF1. For example, multiple transistors formed on the first buffer layer BUF1 may be formed of the same material on the same layer. Alternatively, transistors formed on the first buffer layer BUF1 may be formed of different materials and placed in different layers.

[0107] The first active layer ACT1 can be placed on the first buffer layer BUF1. The first active layer ACT1 is a layer constituting the transistor and may include a channel region overlapping the first gate electrode GAT1, a first source connection region located on one side of the channel region, and a first drain connection region located on the other side of the channel region. The first active layer ACT1 may refer to the active layer of the transistor or a semiconductor layer formed of the same material. Therefore, the first active layer ACT1 can be configured with a transistor or another circuit element and signal line.

[0108] A first gate insulating film GI1 may be disposed on a first active layer ACT1. A first gate electrode GAT1 may be disposed on the first gate insulating film GI1. The first gate electrode GAT1 may refer to the gate electrode of a transistor or a metal layer formed of the same material. Therefore, the first gate electrode GAT1 may constitute a transistor or another circuit element and a signal line. The first gate electrode GAT1 may contain a conductive material. For example, the first gate electrode GAT1 may contain a single layer or multiple layers of any one of molybdenum (Mo), copper (Cu), titanium (Ti), aluminum (Al), chromium (Cr), gold (Au), nickel (Ni), neodymium (Nd), and tungsten (W) or their alloys, but is not limited thereto. For example, the first gate electrode GAT1 may be formed of a Mo / Ti bilayer.

[0109] The first interlayer insulating film ILD1 can be placed on the first gate electrode GAT1. The first interlayer insulating layer ILD1 can be formed by a single layer of silicon nitride (SiNx), a single layer of silicon oxide (SiOx), a multilayer of silicon nitride (SiNx) or a multilayer of silicon oxide (SiOx), but this disclosure is not limited to these.

[0110] The second buffer layer BUF2 can be disposed on the first interlayer insulating film ILD1. The second buffer layer BUF2 can be formed by a single layer of silicon nitride (SiNx) or silicon oxide (SiOx) or multiple layers of silicon nitride (SiNx) or silicon oxide (SiOx), but this disclosure is not limited thereto.

[0111] The second active layer ACT2 can be placed on the second buffer layer BUF2. The second active layer ACT2 can refer to the active layer of a transistor or a semiconductor layer formed of the same material. Therefore, the second active layer ACT2 can be configured with a transistor or another circuit element and signal lines.

[0112] The second gate insulating film GI2 can be placed on the second active layer ACT2. The second gate insulating layer GI2 can be formed by a single layer of silicon nitride (SiNx) or silicon oxide (SiOx) or multiple layers of silicon nitride (SiNx) or silicon oxide (SiOx), but this disclosure is not limited thereto.

[0113] The second gate electrode GAT2 may be placed on the second gate insulating film GI2. The second gate electrode GAT2 may refer to the gate electrode of a transistor or a metal layer formed of the same material. Therefore, the second gate electrode GAT2 can constitute a transistor or another circuit element and signal line. The second gate electrode GAT2 may contain conductive materials. For example, the second gate electrode GAT2 may contain a single layer or multiple layers of any of molybdenum (Mo), copper (Cu), titanium (Ti), aluminum (Al), chromium (Cr), gold (Au), nickel (Ni), neodymium (Nd), and tungsten (W) or their alloys, but is not limited thereto. For example, the second gate electrode GAT2 may be formed of a Mo / Ti bilayer.

[0114] The second interlayer insulating film ILD2 can be placed on the second gate electrode GAT2. The first source-drain electrode SD1 can be placed on the second interlayer insulating film ILD2. The first source-drain electrode SD1 can refer to the source-drain electrode of a transistor or a metal layer formed of the same material. Therefore, the first source-drain electrode SD1 can constitute a transistor or another circuit element and signal line. The first source-drain electrode SD1 can contain conductive materials. For example, the first source-drain electrode SD1 can contain a single layer or multiple layers of any of molybdenum (Mo), copper (Cu), titanium (Ti), aluminum (Al), chromium (Cr), gold (Au), nickel (Ni), neodymium (Nd), and tungsten (W) or their alloys, but the embodiments disclosed herein are not limited thereto. For example, the first source-drain electrode SD1 can be formed of a Ti / Al / Ti three-layer structure.

[0115] The first planarization layer PLN1 can be placed on the first source-drain electrode SD1.

[0116] The second source-drain electrode SD2 can be disposed on the first planarization layer PLN1. The second source-drain electrode SD2 can refer to an electrode electrically connecting the first source-drain electrode SD1 and the light-emitting element ED, or it can refer to a metal layer formed of the same material. Therefore, the second source-drain electrode SD2 can constitute an electrode electrically connecting the transistor and the light-emitting element, or it can constitute another circuit element and signal line. The second source-drain electrode SD2 can contain conductive materials. For example, the second source-drain electrode SD2 can contain a single layer or multiple layers of any one of molybdenum (Mo), copper (Cu), titanium (Ti), aluminum (Al), chromium (Cr), gold (Au), nickel (Ni), neodymium (Nd), and tungsten (W) or their alloys, but is not limited thereto. For example, the second source-drain electrode SD2 can be formed of a Ti / Al / Ti three-layer structure.

[0117] Referring to Figure 5, the storage capacitor Cst can be formed by a first capacitor electrode CAPE1 and a second capacitor electrode CAPE2. In some cases, the storage capacitor Cst can consist of three or more capacitor electrodes, or it can be in the form of two or more capacitors connected in parallel.

[0118] Each of the first capacitor electrode CAPE1 and the second capacitor electrode CAPE2 can be disposed on various metal layers in the display panel 110. For example, the first capacitor electrode CAPE1 may contain the same first gate metal as the first gate electrode GAT1 on the first gate insulating layer GI1, and may be disposed in the first gate metal layer. For example, the second capacitor electrode CAPE2 may contain the same metal as the metal pattern TM on the first interlayer insulating layer ILD1, and may be disposed in the metal pattern layer.

[0119] Referring to Figure 5, a metal pattern TM may be further included. For example, the metal pattern TM may be disposed between the first interlayer insulating layer ILD1 and the second buffer layer BUF2. For example, the metal pattern TM may contain the same metal as the second capacitor electrode CAPE2 on the first interlayer insulating layer ILD1, and may be disposed within the metal pattern layer. The metal pattern TM may contain a conductive material. For example, the metal pattern TM may contain a single layer or multiple layers of molybdenum (Mo), copper (Cu), titanium (Ti), aluminum (Al), chromium (Cr), gold (Au), nickel (Ni), neodymium (Nd), and tungsten (W), or alloys thereof, but this disclosure is not limited thereto. For example, the metal pattern TM may be formed from a single layer of Mo, a single layer of MoTi alloy, or a Mo / Ti double layer. The metal pattern TM may be disposed in the display area DA and / or the non-display area NDA. The metal pattern TM may be used as a mask metal.

[0120] The second planarization layer PLN2 can be placed on the second source-drain electrode SD2.

[0121] The anode electrode AE ​​can be placed on the second planarization layer PLN2. The anode electrode AE ​​can be a pixel electrode. The anode electrode AE ​​can constitute a light-emitting element ED, although it is not shown in Figure 5, but the cathode electrode CE can be placed on the light-emitting layer EL. In this example, the anode electrode AE ​​can be a pixel electrode, and the cathode electrode can be a common electrode. The cathode electrode can be a common electrode deposited over the entire display area DA.

[0122] The bank can be placed on the anode electrode AE. The bank can be configured to simultaneously cover a portion of the anode electrode AE. A portion of the bank corresponding to the light-emitting area EA of the sub-pixel can be formed into an opening.

[0123] A portion of the anode electrode AE ​​can be exposed through an opening (opening portion) of the embankment bank. The luminescent layer EL can be placed on the side of the embankment bank and on the opening (opening portion) of the embankment bank. All or part of the luminescent layer EL can be placed between two adjacent embankment banks.

[0124] In the opening of the embankment bank, the light-emitting layer EL can contact the anode electrode AE. A cathode electrode can be disposed on the light-emitting layer EL. The light-emitting element ED can consist of the anode electrode AE, the light-emitting layer EL, and the cathode electrode CE. The light-emitting layer EL can contain an organic film.

[0125] An encapsulation layer ENCAP can be disposed on the aforementioned light-emitting element ED. The encapsulation layer ENCAP can have a single-layer structure or a multi-layer structure. For example, as shown in Figure 5, the encapsulation layer ENCAP can include a first encapsulation layer PAS1, a second encapsulation layer PCL, and a third encapsulation layer PAS2.

[0126] For example, the first encapsulation layer PAS1 and the third encapsulation layer PAS2 can be inorganic films, while the second encapsulation layer PCL can be an organic layer. Among the first encapsulation layer PAS1, the second encapsulation layer PCL, and the third encapsulation layer PAS2, the second encapsulation layer PCL can be the thickest. Therefore, the second encapsulation layer PCL can serve as a planarization layer. The first encapsulation layer PAS1 is also referred to as the first inorganic encapsulation layer. The second encapsulation layer PCL is also referred to as the organic encapsulation layer, and the third encapsulation layer PAS2 is also referred to as the second inorganic encapsulation layer.

[0127] The first encapsulation layer PAS1 can be disposed on the cathode electrode and positioned closest to the light-emitting element ED. The first encapsulation layer PAS1 can be formed from an inorganic insulating material capable of low-temperature deposition. For example, the first encapsulation layer PAS1 can be formed from silicon nitride (SiNx), silicon oxide (SiOx), silicon nitride oxide (SiON), or aluminum oxide (Al₂O₃). Because the first encapsulation layer PAS1 is deposited in a low-temperature atmosphere, it can prevent damage to the light-emitting layer EL (containing organic materials susceptible to high-temperature atmospheres) during the deposition process.

[0128] The second encapsulation layer PCL can have a smaller area than the first encapsulation layer PAS1. In this case, the second encapsulation layer PCL can be formed to expose the opposite ends of the first encapsulation layer PAS1. The second encapsulation layer PCL serves as a buffer to alleviate interlayer stress caused by bending of the display device 100 and can also be used to enhance planarization performance. For example, the second encapsulation layer PCL can be made of acrylic resin, epoxy resin, polyimide, polyethylene, or silicon oxycarbon (SiOC) and is formed of an organic insulating material. For example, the second encapsulation layer PCL can be formed by spraying.

[0129] The third encapsulation layer PAS2 can be formed on the substrate SUB on which the second encapsulation layer PCL is formed, to cover the top and side surfaces of the second encapsulation layer PCL and the first encapsulation layer PAS1, respectively. The third encapsulation layer PAS2 can minimize or prevent external moisture or oxygen from penetrating into the first encapsulation layer PAS1 and the second encapsulation layer PCL. For example, the third encapsulation layer PAS2 is made of an inorganic insulating material, such as silicon nitride (SiNx), silicon oxide (SiOx), silicon nitride oxide (SiON), or aluminum oxide (Al₂O₃).

[0130] Referring to Figure 5, from a planar schematic view, the light-emitting element ED overlaps with the display area DA. The light-emitting element ED includes a cathode electrode CE, an anode electrode AE, and a light-emitting layer EL. The light-emitting layer EL can have different parts. For example, the light-emitting layer EL includes a first part FPEL, a second part SPEL, and a third part TPEL. The first, second, and third parts of the light-emitting layer EL are spaced apart from each other. Alternatively, it can be said that the first, second, and third parts of the light-emitting layer EL are disconnected from each other. For example, in a planar view, the first part FPEL of the light-emitting layer EL overlaps with the display area DA. Figures 6, 7, 10, 11, and 13 also illustrate this point.

[0131] Similarly, the cathode electrode CE can have various parts. For example, the cathode electrode CE comprises a first part FPCE, a second part SPCE, and a third part TPCE. The first, second, and third parts of the cathode electrode CE are spaced apart from each other. Alternatively, the first, second, and third parts of the cathode electrode CE can be said to be disconnected from each other. For example, from a planar schematic view, the first part FPCE of the cathode electrode CE overlaps with the display area DA. This is also illustrated in Figures 6, 7, 10, 11, and 13.

[0132] Referring to Figure 5, when the touch sensor TS is embedded in the display panel, the touch sensor TS can be disposed on the encapsulation layer ENCAP. The structure of the touch sensor TS will be described in detail below.

[0133] The touch buffer film T-BUF can be disposed on the encapsulation layer ENCAP. The touch sensor TS can be disposed on the touch buffer film T-BUF.

[0134] The touch sensor TS may include touch sensor metal TSM and bridging metal BRG located on different layers.

[0135] The interlayer insulating film (T-ILD) can be disposed between the touch sensor metal (TSM) and the bridging metal (BRG).

[0136] For example, a touch sensor metal TSM may include a first touch sensor metal TSM, a second touch sensor metal TSM, and a third touch sensor metal TSM disposed adjacent to each other. The third touch sensor metal TSM is disposed between the first and second touch sensor metal TSMs. When the first and second touch sensor metal TSMs are electrically connected to each other, they can be electrically connected to each other through a bridging metal BRG placed on different layers. The bridging metal BRG and the third touch sensor metal TSM can be insulated from each other through a touch interlayer insulating film (T-ILD).

[0137] When the touch sensor TS is formed on the display panel, the chemical solutions used in this process (e.g., developer or etchant) may generate moisture. By placing the touch sensor TS on the touch buffer layer T-BUF, it is possible to prevent chemical solutions or moisture from penetrating into the light-emitting layer EL, which contains organic materials, during the manufacturing process of the touch sensor TS. Therefore, the touch buffer film T-BUF can prevent the light-emitting layer EL, which is susceptible to damage from chemicals or moisture, from being damaged.

[0138] The touch buffer film T-BUF is formed at a low temperature (e.g., 100°C) using an organic insulating material with a low dielectric constant of 1 to 3 to prevent damage to the light-emitting layer EL containing organic materials susceptible to high temperatures. For example, the touch buffer film T-BUF can be formed from acrylic, epoxy, or silicone alkyl sheets. When the display device is bent, the encapsulation layer ENCAP may be damaged, and the touch sensor metal TSM placed on the touch buffer film T-BUF may break. Even when the display device 100 is bent, the touch buffer film T-BUF, formed from an organic insulating material and having planarization capability, can prevent damage to the encapsulation layer ENCAP and / or prevent the touch sensor metal TSM constituting the touch sensor TS from breaking with the bridging metal BRG.

[0139] Referring to Figure 5, the touch line TL1 or TL2 can be configured to electrically connect the touch electrode TE and the touchpad. The touch line TL1 or TL2 can be formed from at least one of the sensor metal TSM and the bridging metal BRG.

[0140] When the display panel 110 is of the type in which a touch sensor is embedded, the touch line TL1 or TL2 can extend along the outer slope of the encapsulation layer ENCAP and can extend beyond the top of the dam DAM to the non-display area NDA.

[0141] A protective layer PAC can be set and simultaneously cover the protective layer PAC, which can be an organic insulating film.

[0142] The display device may include a plurality of insulating films disposed on a substrate SUB and under a plurality of light-emitting elements ED. In this disclosure, the plurality of insulating films disposed on the substrate SUB and under a plurality of light-emitting elements ED may refer to a first buffer layer BUF1 to a second planarization layer PLN2 and a plurality of insulating films disposed between the two.

[0143] The display device may include a moisture-proof structure MPS. The moisture-proof structure MPS may be disposed in the first non-display area NDA1. In the embodiment shown in FIG5, the moisture-proof structure MPS may be placed in the external disconnected portion area OSTA. In this disclosure, the moisture-proof structure MPS placed in the external disconnected portion area OSTA may be referred to as an external moisture-proof structure.

[0144] The moisture-proof structure MPS may include an undercut region of at least one of a plurality of insulating films. The moisture-proof structure MPS of the display device according to the embodiment shown in FIG5 may include an undercut region in an inorganic layer disposed on the substrate SUB and positioned below a plurality of light-emitting elements ED. For example, the aforementioned inorganic insulating film may be one or more of a multilayer buffer layer MBUF, an active buffer layer ABUF, a first gate insulating film GI1, a first interlayer insulating film ILD1, a second buffer layer BUF2, a second gate insulating film GI2, and a second interlayer insulating film ILD2. The display device according to the embodiment shown in FIG5 includes a moisture-proof structure MPS, wherein the active buffer layer ABUF, the first gate insulating film GI1, the first interlayer insulating film ILD1, the second buffer layer BUF2, the second gate insulating film GI2, and the second interlayer insulating film ILD2 include an undercut region UCA.

[0145] The first non-display area NDA1 may include a variable border area (VBA), an inner break portion area (ISTA), a dam area (DAMA), and an outer break portion area (OSTA). The dam area (DAMA) may be a region of a dam (DAM) used to control the flow of the second encapsulation layer (PCL). Therefore, the dam (DAM) may be placed in the first non-display area NDA1. The dam (DAM) may include one or more insulating films and may include, for example, a second planarization layer (PLN2) and a dam (BANK) placed on the second planarization layer (PLN2).

[0146] The disconnected portion ST can be placed within the first non-display area NDA1. Because the disconnected portion ST is located within the first non-display area NDA1, external moisture can be prevented from penetrating into the display area DA through the camera aperture CH. The disconnected portion ST can refer to a structure that blocks the moisture penetration pathway by cutting through the light-emitting layer EL and the cathode electrode CE, which are formed by completely depositing the display area DA and the first non-display area NDA1 as a whole within the display device. The disconnected portion ST can also refer to a structure that disconnects the light-emitting layer EL and the cathode electrode CE through a step formed by the second source-drain electrode SD2. For example, the disconnected portion ST can include the second source-drain electrode SD2 and the light-emitting layer EL, and may further include the cathode electrode CE. In this example, the second source-drain electrode SD2 can have a three-layer structure including a first layer, a second layer placed on the first layer, and a third layer placed on the second layer, and can have a structure where the second layer is embedded between the first and third layers.

[0147] The break section ST can include an internal break section IST and an external break section OST. The internal break section IST can be located between the display area DA and the dam DAM. In other words, the internal break section IST can refer to the break section located within the internal break section area ISTA. The external break section OST can be located between the dam DAM and the camera aperture CH. That is, the external break section OST can refer to the break section located within the external break section area OSTA. Because the break section ST is located both inside and outside the dam DAM, it can more effectively prevent external moisture from seeping into the display area DA through the camera aperture CH.

[0148] The variable bezel area VBA can be placed in the first non-display area NDA1, and can be placed between the display area DA and the internal disconnected area ISTA. Signal lines used to transmit signals to multiple light-emitting elements located in the display area DA can be placed in the variable bezel area VBA. For example, the first gate electrode GAT1, the second gate electrode GAT2, the first source-drain electrode SD1, and the second source-drain electrode SD2 can be placed in the variable bezel area VBA. More specifically, a plurality of gate lines can be placed in the variable bezel area VBA.

[0149] Figure 6 is a cross-sectional schematic diagram illustrating a display device 100 according to an embodiment of the present disclosure. More specifically, Figure 6 is a cross-sectional schematic diagram of portion AB in Figure 4.

[0150] In the following description of the embodiment shown in FIG6, no identical or similar elements as those described with reference to FIG1 to FIG5 are specifically described.

[0151] Unlike the display device according to the embodiment shown in FIG. 5, which includes an external moisture-proof structure, the display device according to the embodiment shown in FIG. 6 includes an internal moisture-proof structure. In other words, the moisture-proof structure MPS of the display device according to the embodiment shown in FIG. 6 is an internal moisture-proof structure placed in the internal disconnected portion region ISTA.

[0152] The display device according to the embodiments disclosed herein may include two or more moisture-proof structures.

[0153] Figure 7 is a cross-sectional schematic diagram showing a display device 100 according to an embodiment of the present disclosure. More specifically, Figure 7 is a cross-sectional schematic diagram of portion AB in Figure 4.

[0154] The following description of the embodiment shown in FIG7 does not specifically describe the same display device as that described with reference to FIG1 to FIG6.

[0155] Unlike the display device in the embodiment shown in FIG. 5, which does not include an internal moisture-proof structure but includes an external moisture-proof structure, the display device in the embodiment shown in FIG. 7 includes both an external moisture-proof structure and an internal moisture-proof structure. In other words, the display device according to the embodiment shown in FIG. 7 may include one or more moisture-proof structures MPS, which may include an internal moisture-proof structure placed in the internal disconnected portion region ISTA and an external moisture-proof structure placed in the external disconnected portion region OSTA.

[0156] In the display device according to an embodiment of the present invention, the light-emitting layer EL can be positioned to extend from the display area DA to the boundary of the camera hole CH; in other words, the light-emitting layer EL can be formed by completely depositing it over the entire area of ​​the display area DA. The light-emitting layer EL can be disconnected by the moisture-proof structure MPS. Since the light-emitting layer EL is disconnected at the moisture-proof structure MPS, external moisture entering through the camera hole CH can be prevented from penetrating into the display area DA through the light-emitting layer EL.

[0157] The moisture-proof structure MPS may include an undercut region UCA. The undercut region UCA may be formed in an inorganic insulating film disposed on the substrate SUB and located below multiple light-emitting elements ED.

[0158] Referring to Figure 7, the moisture-proof structure MPS includes a first moisture-proof structure FMPS and a second moisture-proof structure SMPS. As shown in the figure, in a planar view, the first moisture-proof structure FMPS is positioned between the dam structure DAM and the camera hole CH. In a planar view, the dam structure DAM is located between the first moisture-proof structure FMPS and the second moisture-proof structure SMPS. Furthermore, various moisture-proof structures can also be installed between the first moisture-proof structure FMPS and the dam structure DAM to prevent moisture penetration.

[0159] As previously described, the display device according to the embodiments of this disclosure may include one or more moisture-proof structures (MPS) disposed in a first non-display area. The moisture-proof structures (MPS) that may be included in the embodiments of this disclosure are described in more detail below.

[0160] Figure 8 is a cross-sectional schematic diagram showing the moisture-proof structure MPS of the display device according to an embodiment of the present disclosure. Hereinafter, when describing the display device according to the embodiment shown in Figure 8, the parts that are the same as those in Figures 1 to 7 are not specifically described.

[0161] Referring to Figure 8, the moisture-proof structure MPS may include an undercut region UCA of at least one of a plurality of insulating films. In the embodiment shown in Figure 8, the undercut region UCA may be formed between the active buffer layer ABUF and the second interlayer insulating film ILD2. The light-emitting layer EL may be interrupted at the undercut region UCA.

[0162] The moisture-proof structure MPS may include a metal layer MTL placed on the undercut region UCA. For example, the metal layer MTL may be a second source-drain electrode. The light-emitting layer EL may be disconnected on the side of the metal layer MTL.

[0163] For example, the metal layer MTL can be formed from three layers. When the metal layer MTL is three layers, the metal layer MTL can include a first layer M1, a second layer M2 placed on the first layer M1, and a third layer M3 placed on the second layer M2.

[0164] The first layer M1 and the third layer M3 can be metal layers made of the same material, while the second layer M2 can be a metal layer made of a different material than the first layer M1 and the third layer M3. For example, the first layer M1 and the third layer M3 can contain titanium (Ti), and the second layer M2 can contain aluminum (Al). For example, the metal layer MTL can have a multilayer structure with a titanium / aluminum / titanium (Ti / Al / Ti) structure. Because the first layer M1 to the third layer M3 are made of such materials, the second layer M2 can be formed of a material with better conductivity, while the first layer M1 and the third layer M3 can be formed of a material that can provide protection during the manufacturing process.

[0165] The second layer M2 can have a more recessed shape than the first layer M1 and the third layer M3. In other words, the second layer M2 can be etched more than the first layer M1 and the third layer M3, and therefore can have a more recessed shape than the first layer M1 and the third layer M3. Correspondingly, the first layer M1 and the third layer M3 can be more convex than the second layer M2. Furthermore, the first layer M1 can have a more convex shape than the third layer M3. Here, recessed or convex means recessed or convex in a direction parallel to the substrate SUB, and can also mean recessed or convex relative to the undercut region UCA. Since the first layer M1, the second layer M2, and the third layer M3 have the aforementioned shapes, the light-emitting layer EL can be effectively disconnected through the moisture-proof structure MPS. In particular, the light-emitting layer EL can be disconnected at least twice through the moisture-proof structure MPS. For example, the light-emitting layer EL can be disconnected at the undercut region UCA, and can be disconnected on the side of the metal layer MTL. More specifically, the light-emitting layer EL can be disconnected between the first layer M1 and the second layer M2. Furthermore, the luminescent layer EL can be disconnected between the second layer M2 and the third layer M3. Alternatively, the luminescent layer EL can be disconnected between the first layer M1 and the third layer M3.

[0166] The second layer M2 may have a shape in which the interface with the first layer M1 is more prominent than the interface with the third layer M3. This shape can be formed by further etching the second layer M2 compared to the first layer M1 and the third layer M3.

[0167] The undercut region UCA can refer to the undercut region relative to the metal layer MTL. In particular, the undercut region UCA can refer to the undercut region below the first layer M1.

[0168] The moisture-proof structure MPS shown in Figure 8 can be formed in the following manner.

[0169] First, a plurality of insulating films can be formed on the substrate SUB. These insulating films can be one or more of the following: a multi-buffer layer MBUF, an active buffer layer ABUF, a first gate insulating film GI1, a first interlayer insulating film ILD1, a second buffer layer BUF2, a second gate insulating film GI2, and a second interlayer insulating film ILD2. A metal layer MTL can be patterned on the plurality of insulating films. The metal layers MTL can be arranged in the order of first layer M1, second layer M2, and third layer M3.

[0170] A second planarization layer PLN2 can be formed to cover a portion of the metal layer MTL. In this case, the second layer M2 exposed by the metal layer MTL can be locally etched while the second planarization layer PLN2 is being developed.

[0171] After the anode electrode material is deposited on the second planarization layer PLN2, the anode electrode can be formed through a wet etching process. In this case, while the wet etching process is being performed, the second layer M2 exposed by the metal layer MTL can be further etched.

[0172] Dry etching processes can be performed to pattern certain insulating films among a plurality of insulating films. During the dry etching process, some insulating films disposed beneath the metal layer MTL can be etched inward beneath the metal layer MTL to form an undercut region UCA. For example, the second interlayer insulating film ILD2, the second gate insulating film GI2, the second buffer layer BUF2, the first interlayer insulating film ILD1, the first gate insulating film GI1, and the active buffer layer ABUF disposed beneath the metal layer MTL are etched inward beneath the metal layer MTL to form the undercut region UCA.

[0173] The embankment bank can be formed as part of the anode electrode AE. In this case, while developing the embankment bank, the second layer M2 exposed by the metal layer MTL can be further etched. Through dry etching, wet etching, and development processes, the metal layer MTL can have a structure in which the second layer M2 is embedded between the first layer M1 and the third layer M3, and the undercut region UCA can be formed under the metal layer MTL.

[0174] The light-emitting layer EL and the cathode electrode CE can be formed sequentially. In this case, the light-emitting layer EL can be broken at the side and undercut region UCA of the metal layer MTL.

[0175] Referring to Figure 8, the light-emitting layer (EL) has multiple distinct parts. As previously mentioned, the EL comprises a first part (FPEL), a second part (SPEL), and a third part (TPEL). The EL may further comprise a fourth part (FRPEL). As shown, the first, second, third, and fourth parts of the EL are spaced apart from each other. Alternatively, the first, second, third, and fourth parts of the EL can be described as disconnected from each other.

[0176] Here, the second portion of the light-emitting layer EL, SPEL, is located on the first metal layer M1. The first metal layer M1 extends further than a portion of the insulating film in a first direction (e.g., the lateral direction) to form an undercut region UCA. For example, the first metal layer M1 extends further than a portion of the insulating films such as the second interlayer insulating film ILD2, the second gate insulating film GI2, the second buffer layer BUF2, the first interlayer insulating film ILD1, and the first gate insulating film GI1 to form the undercut region UCA.

[0177] The third portion (TPEL) of the light-emitting layer (EL) is positioned adjacent to the undercut region (UCA). For example, the third portion (TPEL) of the light-emitting layer covers the sides of the insulating films such as the second buffer layer (BUF2), the first interlayer insulating film (ILD1), the first gate insulating film (GI1), and the first buffer layer (BUF1). Although the third portion (TPEL) of the light-emitting layer (EL) is separate from the second portion (SPEL) of the light-emitting layer (EL), in a planar view, the third portion (TPEL) and the second portion (SPEL) overlap.

[0178] The fourth portion of the light-emitting layer EL, FRPEL, is located on the metal layer MTL. Compared to a portion of the second metal layer M2, the third metal layer M3 extends further in the first direction (e.g., the lateral direction). Specifically, the fourth portion of the light-emitting layer EL, FRPEL, is located on the extended portion of the third metal layer M3. Alternatively, both the fourth portion of the light-emitting layer EL, FRPEL, and the second portion of the light-emitting layer EL, SPEL, are located on the first metal layer M1, while the fourth portion of the light-emitting layer EL, FRPEL, is directly located on the third metal layer M3, and the second portion of the light-emitting layer EL, SPEL, is directly located on the first metal layer M1.

[0179] Similarly, the cathode electrode CE has various parts. As mentioned earlier, the cathode electrode CE comprises a first part FPCE, a second part SPCE, and a third part TPCE. The cathode electrode CE may further comprise a fourth part FRPCE. As shown in the figure, the first, second, third, and fourth parts of the cathode electrode CE are spaced apart from each other. Alternatively, it can be said that the first, second, third, and fourth parts of the cathode electrode CE are disconnected from each other.

[0180] Here, the second portion of the cathode electrode CE, SPCE, is located on the first metal layer M1. Specifically, the second portion of the cathode electrode CE, SPCE, is located on the second portion of the light-emitting layer EL, SPEL.

[0181] The third part of the cathode electrode CE, TPCE, is located adjacent to the undercut region UCA. Specifically, the third part of the cathode electrode CE, TPCE, is located on the third part of the light-emitting layer EL, TPEL. Although the third part of the cathode electrode CE, TPCE, is separate from the second part of the cathode electrode CE, in the planar schematic diagram, the third part TPCE and the second part SPCE overlap.

[0182] The fourth portion of the cathode electrode CE, FRPCE, is located on the metal layer MTL. Specifically, the fourth portion of the cathode electrode CE, FRPCE, is located on the fourth portion of the light-emitting layer EL, FRPEL. Both the fourth portion of the cathode electrode CE, FRPCE, and the fourth portion of the light-emitting layer EL are separate from the second metal layer M2. In other words, both the fourth portion of the cathode electrode CE, FRPCE, and the second portion of the cathode electrode CE, SPCE, are located on the first metal layer M1. Furthermore, the fourth portion of the cathode electrode CE, FRPCE, is in direct contact with the fourth portion of the light-emitting layer EL, and the second portion of the cathode electrode CE, SPCE, is in direct contact with the second portion of the light-emitting layer EL, SPEL. These features are also shown in Figure 9 and will not be described again.

[0183] Figure 9 is a cross-sectional schematic diagram showing the moisture-proof structure of a display device according to an embodiment of the present disclosure. Hereinafter, in describing the display device according to the embodiment shown in Figure 9, no particular similarities with those in Figures 1 to 8 will be described.

[0184] Referring to Figure 9, the moisture-proof structure MPS may include an undercut region UCA of at least one of a plurality of insulating films. In the embodiment shown in the figure, the undercut region UCA may be formed in the second buffer layer BUF2 to the second interlayer insulating film ILD2. The light-emitting layer EL may be interrupted at the undercut region UCA.

[0185] The moisture-proof structure MPS shown in Figure 9 may differ from the moisture-proof structure MPS shown in Figure 8 in the shape of the undercut region UCA. In the moisture-proof structure MPS shown in Figure 9, the undercut region UCA may include a stepped portion STP.

[0186] The stepped portion STP can refer to a step formed when some insulating films are not etched inward beneath the metal layer MTL in the undercut region UCA. For example, when the second interlayer insulating film ILD2 and the second gate insulating film GI2 are etched inward beneath the metal layer MTL, and the second buffer layer BUF2, the first interlayer insulating film ILD1, and the first gate insulating film GI1 are not etched beneath the metal layer MTL, the stepped portion STP may include the second buffer layer BUF2, the first interlayer insulating film ILD1, and the first gate insulating film GI1.

[0187] In some embodiments, the third portion TPEL of the light-emitting layer EL is disposed above the stepped portion STP, covering the side surface of the second gate insulating film GI2, the side surface of the second buffer layer BUF2, the side surface of the second interlayer insulating film ILD2, and the top surface of the second buffer layer BUF2. Furthermore, the third portion TPEL of the light-emitting layer EL covers the side surface of the second buffer layer BUF2, the side surface of the first interlayer insulating film ILD1, and the side surface of the first gate insulating film GI1.

[0188] The moisture-proof structure MPS shown in Figure 9 can be formed as follows.

[0189] First, a plurality of insulating films can be formed on a substrate SUB. These insulating films can be one or more of a multiple buffer layer MBUF, an active buffer layer ABUF, a first gate insulating film GI1, a first interlayer insulating film ILD1, a second buffer layer BUF2, a second gate insulating film GI2, and a second interlayer insulating film ILD2. Some of the insulating films can be etched near the area where the moisture-proof structure MPS is to be formed. For example, the second gate insulating film GI2 and the second interlayer insulating film ILD2 can be etched to correspond to the area later formed by patterning the metal layer MTL, thereby exposing the second buffer layer BUF2. In this case, the exposed second buffer layer BUF2 can also be partially etched. Specifically, when a mask with openings is placed on the multiple insulating films and a dry etching process is performed, the second gate insulating film GI2 and the second interlayer insulating film ILD2 can be etched to expose the second buffer layer BUF2. This etching process can be referred to as the initial dry etching process. The openings formed in the mask can be located at positions corresponding to the areas where the metal layer MTL will be patterned later.

[0190] The metal layer MTL can be patterned on multiple insulating films. The metal layer MTL can be set in the order of first layer M1, second layer M2, and third layer M3.

[0191] The second planarization layer PLN2 can be formed as part of the overlay metal layer MTL. In this case, during development, the second layer M2 exposed by the metal layer MTL can be partially etched.

[0192] After the anode electrode material is deposited on the second planarization layer PLN2, the anode electrode can be formed through a wet etching process. In this case, while the wet etching process is being performed, the second layer M2 exposed by the metal layer MTL is further etched.

[0193] Some of the multiple insulating films can be patterned by performing a dry etching process. In this dry etching process, some insulating films disposed beneath the metal layer MTL can be etched inwards beneath the metal layer MTL to form the undercut region UCA, and some exposed insulating films can also be etched. This etching process can be called a secondary dry etching process. When performing a secondary dry etching process, isotropic conditions of the dry etching process can be used. For example, when using the metal layer MTL as a mask for a secondary dry etching process, the second interlayer insulating film ILD2 and the second gate insulating film GI2 disposed beneath the metal layer MTL can be etched inwards beneath the metal layer MTL to form the undercut region UCA. Simultaneously, the second buffer layer BUF2, the first interlayer insulating film ILD1, and the first gate insulating film GI1 can be etched toward the substrate SUB to form a stepped shape. In this case, the active buffer layer ABUF can also be partially etched toward the substrate SUB.

[0194] In other words, when the etching process for the plurality of insulating films set in the area containing the moisture-proof structure MPS is divided into a primary dry etching process and a secondary dry etching process, the undercut area UCA and the step portion STP can be formed simultaneously under the metal layer MTL.

[0195] A bank can be formed to cover a portion of the anode electrode AE. In this case, while the bank is being developed, the second layer M2 exposed by the metal layer MTL can be further etched. Through dry etching, wet etching, and development processes, the metal layer MTL can have a structure in which the second layer M2 is embedded between the first layer M1 and the third layer M3, and an undercut region UCA and a stepped portion STP can be formed under the metal layer MTL.

[0196] The light-emitting layer EL and the cathode electrode CE can be formed sequentially. In this case, the light-emitting layer EL can be broken at the side of the metal layer MTL and at the undercut region UCA.

[0197] Figure 10 is a cross-sectional schematic diagram showing a display device 100 according to an embodiment of the present disclosure. More specifically, Figure 10 is a cross-sectional schematic diagram of portion AB in Figure 4.

[0198] In the following description of the embodiment shown in FIG10, no part that is the same as that in FIG1 to FIG9 is specifically described.

[0199] Unlike the display device according to the embodiments shown in Figures 5 to 7, the display device according to the embodiment shown in Figure 10 may include an undercut region UCA of an organic insulating film, wherein the moisture-proof structure MPS includes an undercut region UCA of an inorganic insulating film. More specifically, the moisture-proof structure MPS of the display device according to the embodiment shown in Figure 10 may include an internal moisture-proof structure and may include an undercut region UCA of an organic insulating film.

[0200] The moisture-proof structure MPS may include an undercut region UCA. The undercut region UCA may be formed in an organic insulating film disposed on the substrate SUB and located below multiple light-emitting elements ED.

[0201] Figure 11 is a cross-sectional schematic diagram showing a display device 100 according to an embodiment of the present disclosure. More specifically, Figure 11 is a cross-sectional schematic diagram of portion AB in Figure 4.

[0202] In the following description of the embodiment shown in FIG11, the parts that are the same as those in FIG1 to FIG10 are not specifically described.

[0203] Unlike the display device shown in FIG. 10, which includes an internal moisture-proof structure but not an external moisture-proof structure, the display device shown in the embodiment of FIG. 11 may include an external moisture-proof structure but may not include an internal moisture-proof structure. Furthermore, similar to the display device according to the embodiment of FIG. 10, the display device according to the embodiment of FIG. 11 may include an undercut region (UCA) of an organic insulating film.

[0204] The moisture-proof structure MPS may include an undercut region UCA. The undercut region UCA may be formed in an organic insulating film disposed on the substrate SUB and positioned below multiple light-emitting elements ED.

[0205] The embodiments shown in Figures 10 and 11 can provide a display device including a moisture-proof structure MPS, which includes an undercut region (UCA) of a so-called organic insulating film. Furthermore, the embodiment shown in Figure 10 includes an internal moisture-proof structure, and the embodiment shown in Figure 11 includes an external moisture-proof structure. However, the embodiments disclosed herein are not limited to these display devices, and may also include internal and / or external moisture-proof structures and a moisture-proof structure MPS including an undercut region (UCA) of an organic insulating film.

[0206] Figure 12 is a cross-sectional schematic diagram showing the moisture-proof structure MPS of the display device 100 shown in Figures 10 and 11. Hereinafter, when describing the display device according to the embodiment shown in Figure 12, the parts identical to those in Figures 1 to 11 are not specifically described.

[0207] A moisture-proof structure MPS may include an undercut region UCA. The undercut region UCA may be formed in an organic insulating film disposed on a substrate SUB and positioned below multiple light-emitting elements. The undercut region UCA formed in the organic insulating film may refer to etching at least one organic insulating film to form the undercut region UCA. The organic insulating film in which the undercut region UCA is formed may be one or more of a first planarization layer PLN1 and a second planarization layer PLN2. Figure 12 illustrates an embodiment where the moisture-proof structure MPS includes a first planarization layer PLN1 and an undercut region UCA formed in the first planarization layer PLN1, but the embodiments disclosed herein are not limited to this. For example, the embodiments disclosed herein may include the following: the moisture-proof structure may include one or more of a first planarization layer PLN1 and a second planarization layer PLN2, and an undercut region UCA is formed in one or more of the first planarization layer PLN1 and the second planarization layer PLN2.

[0208] The moisture-proof structure MPS may include a metal layer MTL placed on the undercut region UCA. For example, the metal layer MTL may be a second source-drain electrode. The light-emitting layer EL may be disconnected on the side of the metal layer MTL.

[0209] For example, the metal layer MTL can be formed from three layers. When the metal layer MTL is three layers, the metal layer MTL can include a first layer M1, a second layer M2 placed on the first layer M1, and a third layer M3 placed on the second layer M2.

[0210] The second layer M2 can have a more recessed shape than the first layer M1 and the third layer M3. In other words, compared to the first layer M1 and the third layer M3, the second layer M2 can be further etched, thus the second layer M2 has a more recessed shape than the first layer M1 and the third layer M3. Correspondingly, the first layer M1 and the third layer M3 can be more convex than the second layer M2. Here, recessed or convex means recessed or convex in a direction parallel to the substrate SUB, and can also mean recessed or convex relative to the undercut region UCA. Since the first layer M1, the second layer M2, and the third layer M3 have the aforementioned shapes, the light-emitting layer EL can be effectively disconnected through the moisture-proof structure MPS. In particular, the light-emitting layer EL can be disconnected at least twice through the moisture-proof structure MPS. For example, the light-emitting layer EL can be disconnected at the undercut region UCA, and can be disconnected on the side of the metal layer MTL. More specifically, the light-emitting layer EL can be disconnected between the first layer M1 and the second layer M2.

[0211] The second layer M2 can have a shape where the interface with the first layer M1 is more prominent than the interface with the third layer M3. This shape can be formed by further etching the second layer M2 while the first layer M1 and the third layer M3 are not further etched.

[0212] The undercut region UCA can refer to the undercut region relative to the metal layer MTL. In particular, the undercut region UCA can refer to the undercut region below the first layer M1.

[0213] Referring to Figure 12, the light-emitting layer (EL) can have different parts. Here, the EL comprises a first part (FPEL), a second part (SPEL), and a third part (TPEL). From the planar schematic, the first part (FPEL) overlaps with the display area (DA). As shown, the first, second, and third parts of the EL are spaced apart from each other. Alternatively, it can be said that the first, second, and third parts of the EL are disconnected from each other.

[0214] Here, the second portion of the light-emitting layer EL, SPEL, is located on the first metal layer M1. The first metal layer M1 extends further than a portion of the insulating film PLN1 in a first direction (e.g., the lateral direction) to form an undercut region UCA. For example, the first metal layer M1 extends further than a portion of the insulating film PLN1 to form an undercut region UCA.

[0215] The third portion (TPEL) of the light-emitting layer (EL) is positioned adjacent to the undercut region (UCA). Specifically, the third portion (TPEL) of the light-emitting layer (EL) is positioned below the second portion (SPEL) of the light-emitting layer (EL). For example, the third portion (TPEL) of the light-emitting layer covers all surfaces of the insulating film PLN1 (e.g., the sides and top). Although the third portion (TPEL) of the light-emitting layer (EL) is separate from the second portion (SPEL), in a plan view, the third portion (TPEL) overlaps with the second portion (SPEL).

[0216] Similarly, the cathode electrode CE also has different parts. Here, the cathode electrode CE comprises a first part FPCE, a second part SPCE, and a third part TPCE. From the planar schematic diagram, the first part FPCE of the cathode electrode CE overlaps with the display area DA. As shown in the figure, the first, second, and third parts of the cathode electrode CE are spaced apart from each other. Alternatively, it can be said that the first, second, and third parts of the cathode electrode CE are disconnected from each other.

[0217] Here, the second part SPCE of the cathode electrode CE is located on the first metal layer M1. Specifically, the second part SPCE of the cathode electrode CE is located on the second part SPEL of the light-emitting layer EL and on the third metal layer M3. As shown in Figure 12, the second part SPCE of the cathode electrode CE is not in direct contact with the second part SPEL of the light-emitting layer EL.

[0218] The third part of the cathode electrode CE, TPCE, is located adjacent to the undercut region UCA. Specifically, the third part of the cathode electrode CE, TPCE, is located on the third part of the light-emitting layer EL, TPEL. Although the third part of the cathode electrode CE, TPCE, is separate from the second part, SPCE, the third part of TPCE overlaps with the second part, SPCE, as seen in the planar schematic diagram.

[0219] Figure 13 is a cross-sectional schematic diagram showing a display device according to an embodiment of the present disclosure. More specifically, Figure 13 is a cross-sectional schematic diagram of portion AB in Figure 4.

[0220] In the following description of the display device shown in FIG13, the contents not specifically described may be the same as those described with reference to FIG1 to FIG12.

[0221] The difference between the display device according to the embodiment shown in FIG13 and the display devices shown in FIG5 to FIG7 is that the disconnected portion is not placed in the outer disconnected portion region OSTA and the inner disconnected portion region ISTA, while the moisture-proof structure MPS is completely located in the outer disconnected portion region OSTA and the inner disconnected portion region ISTA. Furthermore, the structure of the moisture-proof structure MPS is also different from that of the display devices shown in FIG5 to FIG7. Although FIG10 shows an embodiment without a disconnected portion in the outer disconnected portion region OSTA and the inner disconnected portion region ISTA, one or more moisture-proof structures MPS shown in FIG10 are included in the first non-display area, and the disconnected portion ST shown in FIG5 to FIG7 may also be included in the embodiments disclosed herein.

[0222] Figure 14 is a cross-sectional schematic diagram of the moisture-proof structure MPS shown in Figure 13. In the following description of the moisture-proof structure MPS shown in Figure 14, the same moisture-proof structures as those described with reference to Figures 1 to 13 are not specifically described.

[0223] Referring to Figure 14, the moisture-proof structure MPS may include an undercut region UCA. The undercut region UCA may be placed in an organic insulating film disposed on a substrate SUB and positioned below a plurality of light-emitting elements. The undercut region UCA placed in the organic insulating film may refer to etching at least one organic insulating film to form the undercut region UCA. For example, the organic insulating film in which the undercut region UCA is formed may be one or more of a first planarization layer PLN1 and a second planarization layer PLN2. Figure 14 illustrates an embodiment in which the moisture-proof structure MPS includes a first planarization layer PLN1 and an undercut region UCA formed in the first planarization layer PLN1, but the embodiments disclosed herein are not limited thereto. For example, embodiments of the present invention may include the following: the moisture-proof structure may include one or more of a first planarization layer PLN1 and a second planarization layer PLN2, and an undercut region UCA is formed in one or more of the first planarization layer PLN1 and the second planarization layer PLN2.

[0224] The moisture-proof structure MPS may include a recess CONC of at least one of a plurality of insulating films. For example, the recess CONC may be placed in an inorganic insulating film disposed on a substrate SUB and positioned below a plurality of light-emitting elements. A recess CONC located in an inorganic insulating film may mean that at least one of the inorganic insulating films is etched to form the recess CONC. The inorganic insulating film may be an inorganic insulating film disposed on the substrate SUB and positioned below the light-emitting elements. For example, the inorganic insulating film may be a first buffer layer BUF1 and a second interlayer insulating film ILD2, and one or more insulating films disposed between the two layers. Figure 14 shows an embodiment in which the second gate insulating film GI2 to the second interlayer insulating film ILD2 include the recess CONC, but the embodiments disclosed herein are not limited to these embodiments.

[0225] The recessed portion (UCA) of the organic insulating film can be placed within the CONC recess. A portion of the inorganic insulating film can be exposed through the undercut region (UCA) of the organic insulating film. For example, the second buffer layer (BUF2) can be exposed through the undercut region (UCA) of the organic insulating film, and the light-emitting layer (EL) can be placed on the exposed second buffer layer (BUF2).

[0226] The moisture-proof structure MPS may include a metal layer MTL placed on the undercut region UCA. For example, the metal layer MTL may be a second source-drain electrode. The light-emitting layer EL may be disconnected on the side of the metal layer MTL.

[0227] For example, the metal layer MTL can be formed from three layers. When the metal layer MTL is three layers, the metal layer MTL can include a first layer M1, a second layer M2 placed on the first layer M1, and a third layer M3 placed on the second layer M2.

[0228] The second layer M2 can have a more recessed shape than the first layer M1 and the third layer M3. In other words, the second layer M2 can be etched more than the first layer M1 and the third layer M3, and therefore can have a more recessed shape than the first layer M1 and the third layer M3. Correspondingly, the first layer M1 and the third layer M3 can be more convex than the second layer M2. Here, recess or convex means recessed or convex in a direction parallel to the substrate SUB, and can mean recessed or convex relative to the undercut region UCA. Since the first layer M1, the second layer M2, and the third layer M3 have the aforementioned shapes, the light-emitting layer EL can be effectively disconnected through the moisture-proof structure MPS. In particular, the light-emitting layer EL can be disconnected at least twice through the moisture-proof structure MPS. For example, the light-emitting layer EL can be disconnected at the undercut region UCA, and can be disconnected on the side of the metal layer MTL. More specifically, the light-emitting layer EL can be disconnected between the first layer M1 and the second layer M2.

[0229] The second layer M2 may have a shape in which the interface with the first layer M1 is more prominent than the interface with the third layer M3. This shape can be formed by further etching the second layer M2, while the first layer M1 and the third layer M3 are not further etched.

[0230] The moisture-proof structure MPS shown in Figure 14 can be formed as follows.

[0231] First, a plurality of insulating films can be formed on the substrate SUB. The plurality of insulating films can be one or more of the following: a multi-buffer layer MBUF, an active buffer layer ABUF, a first gate insulating film GI1, a first interlayer insulating film ILD1, a second buffer layer BUF2, a second gate insulating film GI2, and a second interlayer insulating film ILD2. The recess CONC is formed in the plurality of insulating films by performing a dry etching process. For example, the recess CONC can be formed by etching the second interlayer insulating film ILD2 and the second gate insulating film GI2. The recess CONC can also be formed by further etching the insulating film formed beneath the second gate insulating film GI2.

[0232] A planarization layer may be formed on the recess CONC and the second interlayer insulating film ILD2. The planarization layer may be an organic insulating film. The planarization layer may be exposed and developed using a halftone mask to fill the recess CONC with the planarization layer, which is an organic insulating film. The planarization layer may be a first planarization layer PLN1 or a second planarization layer PLN2. The halftone mask may include a fulltone area and a halftone area. For example, when forming the moisture-proof structure MPS shown in FIG. 14, the planarization layer may be the first planarization layer PLN1. Furthermore, the halftone mask may include a halftone area formed in the area corresponding to the recess CONC.

[0233] The metal layer MTL can be patterned on the first planarization layer PLN1 and multiple insulating films. The metal layer MTL can be arranged in the order of first layer M1, second layer M2, and third layer M3. The second layer M2 exposed by the metal layer MTL can be partially etched by performing a dry etching process on the metal layer MTL.

[0234] The second planarization layer PLN2 and the bank can be formed on a plurality of insulating films. The second planarization layer PLN2 can be formed by an ashing process, and the bank can be formed by a developing process.

[0235] A portion of the first planarization layer PLN1 formed in the recess CONC can be etched through an ashing and developing process to form an undercut region UCA. For example, the first planarization layer PLN1 can be etched to form the undercut region UCA inward under the metal layer MTL and expose the second buffer layer BUF2.

[0236] Through dry etching, ashing, and development processes, the metal layer MTL can have a structure in which the second layer M2 is recessed between the first layer M1 and the third layer M3, and an undercut region UCA is formed in the recessed area CONC below the metal layer MTL.

[0237] The light-emitting layer EL and the cathode electrode CE can be formed sequentially. In this case, the light-emitting layer EL can be broken at the side and undercut region UCA of the metal layer MTL.

[0238] The first encapsulation layer PAS1 and the second encapsulation layer PAS2 can be formed on the light-emitting layer EL and the cathode electrode CE.

[0239] Referring to Figure 14, the light-emitting layer (EL) can have different parts. Here, the EL comprises a first part (FPEL), a second part (SPEL), and a third part (TPEL). From the planar schematic, the first part (FPEL) overlaps with the display area (DA). As shown, the first, second, and third parts of the EL are spaced apart from each other. Alternatively, it can be said that the first, second, and third parts of the EL are disconnected from each other.

[0240] Here, the second portion of the light-emitting layer EL, SPEL, is located on the first metal layer M1. The first metal layer M1 extends further than a portion of the insulating film PLN1, such as the second interlayer insulating film ILD2 and the second gate insulating film GI2, in a first direction (e.g., the lateral direction) to form an undercut region UCA. For example, the first metal layer M1 extends further than a portion of the insulating film, the second interlayer insulating film ILD2, and the second gate insulating film GI2 to form the undercut region UCA.

[0241] The third portion (TPEL) of the luminescent layer (EL) is positioned adjacent to the undercut region (UCA). Specifically, the third portion (TPEL) of the luminescent layer (EL) is positioned below the second portion (SPEL) of the luminescent layer (EL). For example, the third portion (TPEL) of the luminescent layer (EL) is located on the recess (CONC). Although the third portion (TPEL) of the luminescent layer (EL) is separate from the second portion (SPEL), from a planar schematic perspective, the third portion (TPEL) and the second portion (SPEL) overlap.

[0242] Similarly, the cathode electrode CE also has different parts. Here, the cathode electrode CE comprises a first part FPCE, a second part SPCE, and a third part TPCE. From the planar schematic diagram, the first part FPCE of the cathode electrode CE overlaps with the display area DA. As shown in the figure, the first, second, and third parts of the cathode electrode CE are spaced apart from each other. Alternatively, it can be said that the first, second, and third parts of the cathode electrode CE are disconnected from each other.

[0243] Here, the second portion SPCE of the cathode electrode CE is located on the first metal layer M1. Specifically, the second portion SPCE of the cathode electrode CE is located on a portion of the light-emitting layer EL that is separate from the second portion SPEL of the light-emitting layer EL. The second portion SPCE of the cathode electrode CE is also located on the third metal layer M3. As shown in Figure 14, the second portion SPCE of the cathode electrode CE is not in direct contact with the second portion SPEL of the light-emitting layer EL.

[0244] The third part of the cathode electrode CE, TPCE, is located adjacent to the undercut region UCA. Specifically, the third part of the cathode electrode CE, TPCE, is located on the third part of the light-emitting layer EL, TPEL. Although the third part of the cathode electrode CE, TPCE, is separate from the second part, SPCE, the third part of TPCE overlaps with the second part, SPCE, as seen in the planar schematic diagram.

[0245] Figure 15 is a cross-sectional schematic diagram showing a display device 100 according to an embodiment of the present disclosure. More specifically, Figure 13 is a cross-sectional schematic diagram of part AB in Figure 4. Hereinafter, in describing the display device shown in Figure 13, the contents not specifically described are the same as those described with reference to Figures 1 to 14.

[0246] Referring to Figure 15, the display device 100 may include a moisture-proof structure MPS. The moisture-proof structure MPS may be disposed in the external disconnected portion region OSTA. For example, the moisture-proof structure MPS may be disposed between the camera aperture CH and the dam structure DAM. The moisture-proof structure MPS shown in Figure 15 may be an external moisture-proof structure.

[0247] The moisture-proof structure MPS may include at least one undercut region UCA among a plurality of insulating films. The moisture-proof structure MPS may include an undercut region disposed in an inorganic insulating film, which is placed below a plurality of light-emitting elements ED. Except that an auxiliary metal layer AML is disposed between the inorganic insulating films in which the moisture-proof structure MPS is disposed in the undercut region UCA, the display device 100 shown in FIG. 15 may have the same configuration as the display device 100 shown in FIG. 5.

[0248] Referring to Figure 15, the moisture-proof structure MPS may include an auxiliary metal layer AML located within or below the UCA. During the formation of the moisture-proof structure MPS, the auxiliary metal layer AML can serve as an etch stop layer ESL during the metal layer etching process. In the description of this disclosure, the auxiliary metal layer AML and the etch stop layer ESL may have the same meaning.

[0249] The auxiliary metal layer AML may comprise a metallic material. For example, the auxiliary metal layer AML may comprise a single layer or multiple layers of any of molybdenum (Mo), copper (Cu), titanium (Ti), aluminum (Al), chromium (Cr), gold (Au), nickel (Ni), neodymium (Nd), and tungsten (W), or alloys thereof, but this disclosure is not limited thereto. The auxiliary metal layer AML may comprise the same material as the first gate electrode GAT1, the second gate electrode GAT2, or the metal pattern TM. For example, the auxiliary metal layer AML may be formed of a bilayer or a single layer of Mo.

[0250] FIG16 is a schematic cross-sectional view of a display device 100 according to an embodiment of the present disclosure. More specifically, FIG16 is a cross-sectional view of portion AB in FIG4. Hereinafter, the description of the embodiment shown in FIG16 is not specifically the same as that of the display device described with reference to FIGS. 1 to 15.

[0251] Referring to Figure 16, the display device 100 may include a moisture-proof structure MPS. The moisture-proof structure MPS may be disposed in the internal disconnected portion region ISTA. For example, the moisture-proof structure MPS may be disposed between the display area DA and the dam structure DAM. The moisture-proof structure MPS shown in Figure 16 may be an internal moisture-proof structure.

[0252] Except for the auxiliary metal layer AML disposed between the moisture-proof structure MPS placed in the undercut region UCA between the inorganic insulating films, the display device 100 shown in FIG16 may have the same configuration as the display device 100 shown in FIG6.

[0253] Figure 17 is a schematic cross-sectional view of a display device 100 according to an embodiment of the present disclosure. More specifically, Figure 17 is a cross-sectional view of portion AB in Figure 4. Hereinafter, in the description of the embodiment shown in Figure 17, there is no specific description identical to that described with reference to Figures 1 to 16.

[0254] Referring to Figure 17, the display device 100 may include two or more moisture-proof structures MPS. The moisture-proof structures MPS may be disposed in the external disconnected region OSTA and the internal disconnected region ISTA. For example, the moisture-proof structure MPS may be disposed between the display area DA and the dam structure DAM, and simultaneously disposed on a plane between the camera aperture CH and the dam structure DAM. The moisture-proof structure MPS shown in Figure 17 can be an external moisture-proof structure and an internal moisture-proof structure. The external moisture-proof structure may also be referred to as the first moisture-proof structure FMPS, and the internal moisture-proof structure may also be referred to as the second moisture-proof structure SMPS.

[0255] Referring to Figure 17, the first moisture-proof structure FMPS can be positioned between the camera aperture CH and the dam structure DAM on a plane. The dam structure DAM can be positioned between the first moisture-proof structure FMPS and the second moisture-proof structure SMPS. The second moisture-proof structure SMPS can be positioned between the display area DA and the dam structure DAM on a plane.

[0256] The display device 100 shown in Figure 17 may have the same structure as the display device 100 shown in the figure, except that the auxiliary metal layer AML is disposed therein, in which the moisture-proof structure MPS is disposed between the inorganic insulating films in the undercut region UCA.

[0257] Figure 18 is a cross-sectional schematic diagram of the moisture-proof structure MPS shown in Figures 15 to 17. In the following description of the embodiment shown in Figure 18, no content identical to that in Figures 1 to 17 will be specifically described.

[0258] Referring to Figure 18, the moisture-proof structure MPS may include at least one undercut region UCA among a plurality of insulating films. In the embodiment shown in Figure 18, the undercut region UCA may be formed between the first buffer layer BUF1 and the second interlayer insulating film ILD2. The light-emitting layer EL may be interrupted at the undercut region UCA. The plurality of insulating films shown in Figure 18 may have the same structure as the plurality of insulating films shown in Figure 8, therefore, further details will not be provided.

[0259] The moisture-proof structure MPS may include a metal layer MTL placed on the undercut region UCA. For example, the metal layer MTL may have the same structure as the second source-drain electrode. The light-emitting layer EL may be disconnected on the side of the metal layer MTL. The metal layer MTL shown in Figure 18 may have the same structure as the metal layer MTL shown in Figure 8, and will not be described again.

[0260] The moisture-proof structure MPS may include an etch stop layer ESL disposed within or beneath the undercut region UCA. The etch stop layer ESL may also be referred to as an auxiliary metal layer AML. Referring to FIG18, the etch stop layer ESL may be disposed between multiple insulating films disposed beneath the metal layer MTL. For example, the etch stop layer ESL may be disposed between a second gate insulating film GI2 and a second interlayer insulating film ILD2 located beneath the metal layer MTL. Compared to some of the insulating films forming the undercut region UCA, the etch stop layer ESL may be configured to extend further in a first direction (e.g., the lateral direction). For example, the etch stop layer ESL may be configured to extend beyond a portion of the insulating film, such as the second interlayer insulating film ILD2, on the second gate insulating film GI2.

[0261] The etch stop layer (ESL) can contain metallic materials. For example, the ESL can contain a single layer or multiple layers of any of molybdenum (Mo), copper (Cu), titanium (Ti), aluminum (Al), chromium (Cr), gold (Au), nickel (Ni), neodymium (Nd), and tungsten (W), or alloys thereof, but this disclosure is not limited thereto. For example, the ESL can contain the same material as the second gate electrode GAT2. For example, the ESL can be composed of a molybdenum / titanium (Mo / Ti) bilayer or a molybdenum (Mo) monolayer.

[0262] An etch stop layer (ESL) can prevent over-etching of some insulating films disposed beneath the ESL during the etching process of forming a moisture-proof structure (MPS), which involves patterning multiple insulating films or metals such as the anode electrode (AE) or metal layer (MTL). For example, in the embodiment shown in FIG18, the undercut region (UCA) can be formed in a structure in which a portion of the second interlayer insulating film (ILD2) disposed on the etch stop layer (ESL) is etched, but the etch stop layer (ESL) is not etched.

[0263] Referring to Figure 18, the light-emitting layer (EL) can have several parts. As mentioned earlier, the EL can include a first part (FPEL), a second part (SPEL), and a third part (TPEL). This type of EL can further include a fourth part (FRPEL). As shown in the figure, the first part (FPEL), the second part (SPEL), the third part (TPEL), and the fourth part (FRPEL) of the EL can be spaced apart from each other. That is, the first part (FPEL), the second part (SPEL), the third part (TPEL), and the fourth part (FRPEL) of the EL can be separated from each other.

[0264] Here, the second portion of the light-emitting layer EL, SPEL, can be placed on the first layer M1 of the metal layer MTL. Compared to certain insulating films, the first layer M1 of the metal layer MTL can extend further in a first direction (e.g., the lateral direction) to form an undercut region UCA. For example, the first layer M1 of the metal layer MTL can extend beyond a portion of an insulating film such as the second interlayer insulating film ILD2 to form the undercut region UCA.

[0265] The third portion (TPEL) of the emitting layer (EL) can be positioned adjacent to the undercut region (UCA). For example, the third portion (TPEL) of the emitting layer (EL) can cover the surface above the etch stop layer (ESL) and simultaneously cover the side surface (SSX) of the insulating film containing the second interlayer insulating film (ILD2). The third portion (TPEL) of the emitting layer (EL) can be separated from the second portion (SPEL) of the emitting layer (EL), and the third portion (TPEL) and the second portion (SPEL) of the emitting layer (EL) can overlap each other in a plane. That is, in a planar view, the third portion (TPEL) of the emitting layer (EL) and the second portion (SPEL) of the emitting layer (EL) overlap each other.

[0266] The fourth portion of the light-emitting layer EL, FRPEL, can be placed on the metal layer MTL. The third layer M3 of the metal layer MTL can extend further than a portion of the second layer M2 of the metal layer MTL in a first direction (e.g., the lateral direction). For example, the fourth portion of the light-emitting layer EL, FRPEL, can be placed on an extension of the third layer M3 of the metal layer MTL. Both the fourth portion of the light-emitting layer EL, FRPEL, and the second portion of the light-emitting layer EL, SPEL, can be placed on the first layer M1 of the metal layer MTL, but the fourth portion of the light-emitting layer EL, FRPEL, is placed directly on the third layer M3 of the metal layer MTL, and the second portion of the light-emitting layer EL, SPEL, is placed directly on the first layer M1 of the metal layer MTL.

[0267] Furthermore, the cathode electrode CE can have several parts. As mentioned earlier, the cathode electrode CE can include a first part FPCE, a second part SPCE, and a third part TPCE. The cathode electrode CE can further include a fourth part FRPCE. As shown in the figure, the first part FPCE, the second part SPCE, the third part TPCE, and the fourth part FRPCE of the cathode electrode CE can be spaced apart from each other. More specifically, the first part FPCE, the second part SPCE, the third part TPCE, and the fourth part FRPCE of the cathode electrode CE can be separated from each other.

[0268] Here, the second part SPCE of the cathode electrode CE can be placed on the first layer M1 of the metal layer MTL. For example, the second part SPCE of the cathode electrode CE can be placed on the second part SPEL of the light-emitting layer EL.

[0269] The third portion (TPCE) of the cathode electrode (CE) can be positioned adjacent to the undercut region (UCA). For example, the third portion (TPCE) of the cathode electrode (CE) can be positioned on the third portion (TPEL) of the light-emitting layer (EL). Although the third portion (TPCE) of the cathode electrode (CE) is separated from the second portion (SPCE) of the cathode electrode (CE), the third portion (TPCE) of the cathode electrode (CE) and the second portion (SPCE) of the cathode electrode (CE) can overlap each other in a plane. That is, in a planar view, the third portion (TPCE) of the cathode electrode (CE) and the second portion (SPCE) of the cathode electrode (CE) overlap each other.

[0270] The fourth portion of the cathode electrode CE, FRPCE, can be placed on the metal layer MTL. For example, the fourth portion of the cathode electrode CE, FRPCE, can be placed on the fourth portion of the light-emitting layer EL, FRPEL. Both the fourth portion of the cathode electrode CE, FRPCE, and the fourth portion of the light-emitting layer EL can be separated from the second layer M2 of the metal layer MTL. Both the fourth portion of the cathode electrode CE, FRPCE, and the second portion of the cathode electrode CE, SPCE, can be located on the first layer M1 of the metal layer MTL. Furthermore, the fourth portion of the cathode electrode CE, FRPCE, can be in direct contact with the fourth portion of the light-emitting layer EL, and the second portion of the cathode electrode CE, SPCE, can be in direct contact with the second portion of the light-emitting layer EL, SPEL. This structure is also shown in Figures 19 to 23, and the same structure will not be described again.

[0271] Figure 19 is an exemplary cross-sectional schematic diagram of the moisture-proof structure MPS shown in Figures 15 to 17. Hereinafter, in describing the embodiments shown in Figure 19, unless otherwise specifically described, the embodiments described are the same as those described with reference to Figures 1 to 18.

[0272] Referring to Figure 19, the moisture-proof structure MPS may include multiple insulating films, undercut regions UCA, metal layers MTL, and etch stop layers ESL. The multiple insulating films, undercut regions UCA, and metal layers MTL shown in Figure 19 may have the same structure as the multiple insulating films, undercut regions UCA, and metal layers MTL shown in Figure 18, and therefore will not be described in detail.

[0273] Referring to Figure 19, the etch stop layer ESL can be disposed between the second gate insulating film GI2 and the second interlayer insulating film ILD2, which are located below the metal layer MTL. Compared to some insulating films that form the undercut region UCA, the etch stop layer ESL is designed to extend further in the first direction (e.g., the lateral direction), but the extended portion can have a relatively small thickness. In other words, in the portion that extends further than some insulating films, the upper part of the etch stop layer ESL can be etched during the etching process to form the etch stop residue film ESRL. The etch stop layer ESL can contain the same material as the second gate electrode GAT2. For example, the etch stop layer ESL can be composed of a Mo / Ti bilayer or a Mo monolayer, and the etch stop residue film ESRL can be a Ti residue film of a Mo / Ti bilayer or a Mo residue film of a Mo monolayer.

[0274] The third portion (TPEL) of the emitting layer (EL) can be located adjacent to the undercut region (UCA). For example, the third portion (TPEL) of the emitting layer (EL) can cover the side surface (SSX) of the insulating film containing the second interlayer insulating film (ILD2), and simultaneously cover the side surface of the etch stop layer (ESL) and the upper surface of the etch stop residue film (ESRL). The third portion (TPEL) of the emitting layer (EL) can be separated from the second portion (SPEL) of the emitting layer (EL), and the third portion (TPEL) and the second portion (SPEL) of the emitting layer (EL) can overlap each other in a plane. In other words, in a planar view, the third portion (TPEL) and the second portion (SPEL) of the emitting layer (EL) can overlap each other.

[0275] The third portion (TPCE) of the cathode electrode (CE) can be positioned adjacent to the undercut region (UCA). For example, the third portion (TPCE) of the cathode electrode (CE) can be placed on the third portion (TPEL) of the light-emitting layer (EL). Although the third portion (TPCE) of the cathode electrode (CE) is separated from the second portion (SPCE) of the cathode electrode (CE), the third portion (TPCE) and the second portion (SPCE) of the cathode electrode (CE) can overlap each other in a plane. In other words, in a planar view, the third portion (TPCE) and the second portion (SPCE) of the cathode electrode (CE) can overlap each other.

[0276] Figure 20 is an exemplary cross-sectional schematic diagram of the moisture-proof structure MPS shown in Figures 15 to 17. Hereinafter, in describing the embodiments shown in Figure 20, unless otherwise specifically described, the embodiments described are the same as those described with reference to Figures 1 to 19.

[0277] Referring to Figure 20, the moisture-proof structure MPS may include multiple insulating films, undercut regions (UCA), metal layers (MTL), and etch stop layers (ESL). The multiple insulating films and metal layers (MTL) shown in Figure 20 may have the same structure as those shown in Figure 18, and therefore will not be described further.

[0278] Referring to Figure 20, the undercut region UCA can be formed within the region containing an insulating film, which includes an active buffer layer ABUF, a second interlayer insulating film ILD2, and an etch stop layer ESL. For example, the etch stop layer ESL can be disposed between the second gate insulating film GI2 and the second interlayer insulating film ILD2, located below the metal layer MTL. The etch stop layer ESL can contain the same material as the second gate electrode GAT2. For example, the etch stop layer ESL can be composed of a Mo / Ti bilayer or a Mo monolayer. The light-emitting layer EL can be interrupted at the undercut region UCA. Unlike the etch stop layer ESL shown in Figures 18 or 19, the etch stop layer ESL may not extend in the first direction (e.g., the lateral direction) and can be disposed between the insulating films. In other words, during the etching process, the etch stop layer ESL can be over-etched so that multiple insulating films located below this etch stop layer ESL are etched and removed together.

[0279] Referring to Figure 20, the third portion TPEL of the light-emitting layer EL can be positioned adjacent to the undercut region UCA. For example, the third portion TPEL of the light-emitting layer EL can cover the sides of multiple insulating films including the second buffer layer BUF2, the first interlayer insulating film ILD1, the first gate insulating film GI1, and the first buffer layer BUF1. The third portion TPEL of the light-emitting layer EL can be separated from the second portion SPEL of the light-emitting layer EL, and the third portion TPEL of the light-emitting layer EL and the second portion SPEL of the light-emitting layer EL can overlap each other in a plane.

[0280] The third portion TPCE of the cathode electrode CE can be located adjacent to the undercut region UCA. For example, the third portion TPCE of the cathode electrode CE can be placed on the third portion TPEL of the light-emitting layer EL. Although the third portion TPCE of the cathode electrode CE is separated from the second portion SPCE of the cathode electrode CE, the third portion TPCE of the cathode electrode CE and the second portion SPCE of the cathode electrode CE can overlap each other in a plane.

[0281] Figure 21 is an exemplary cross-sectional schematic diagram of the moisture-proof structure MPS shown in Figures 15 to 17. Hereinafter, in describing the embodiment shown in Figure 21, content not specifically described may be the same as that described in the embodiments with reference to Figures 1 to 20.

[0282] Referring to Figure 21, the moisture-proof structure MPS may include an undercut region UCA of at least one of a plurality of insulating films. In the embodiment shown in Figure 21, the undercut region UCA may be formed on the second gate insulating film GI2 to the second interlayer insulating film ILD2. The light-emitting layer EL may be interrupted at the undercut region UCA. The plurality of insulating films shown in Figure 21 may have the same structure as the plurality of insulating films shown in Figure 18, and therefore will not be described again.

[0283] The moisture-proof structure MPS shown in Figure 21 may differ from the moisture-proof structure MPS shown in Figure 18 in the shape of the undercut region UCA. In the moisture-proof structure MPS shown in Figure 21, the undercut region UCA may include a stepped portion STP.

[0284] The stepped section STP can refer to the step formed when some insulating films and etch stop layers (ESL) are not etched inwards below the metal layer MTL of the undercut region UCA. For example, when the second interlayer insulating film ILD2 is etched inwards below the metal layer MTL but insulating films such as the second gate insulating film GI2, the second buffer layer BUF2, the first interlayer insulating film ILD1, the first gate insulating film GI1, and the etch stop layer ESL are not etched inwards below the metal layer MTL, the stepped section STP can include the etch stop layer ESL, the second gate insulating film GI2, the second buffer layer BUF2, the first interlayer insulating film ILD1, and the first gate insulating film GI1.

[0285] The etch stop layer (ESL) may contain the same material as the second gate electrode (GAT2). For example, the ESL may be composed of a Mo / Ti bilayer or a Mo monolayer.

[0286] Referring to Figure 21, the third part TPEL of the light-emitting layer EL is disposed on the stepped portion STP, which can cover the side surface SSX of the second interlayer insulating film ILD2 and the upper surface and side surface of the etch stop layer ESL, and can also cover the side surface of the second gate insulating film GI2, the side surface of the second buffer layer BUF2, and the side surface of the first interlayer insulating film ILD1. The third part TPEL of the light-emitting layer EL can be separated from the second part SPEL of the light-emitting layer EL, and the third part TPEL of the light-emitting layer EL and the second part SPEL of the light-emitting layer EL can overlap each other on a plane.

[0287] The third part of the cathode electrode CE, TPCE, can be placed on the third part of the light-emitting layer EL, TPEL. Although the third part of the cathode electrode CE, TPCE, is separated from the second part of the cathode electrode CE, the third part of the cathode electrode CE, TPCE, and the second part of the cathode electrode CE, SPCE, can overlap each other on a plane.

[0288] Figure 22 is an exemplary cross-sectional schematic diagram showing the moisture-proof structure MPS shown in Figures 15 to 17. Hereinafter, when describing the display device according to the embodiments shown in the figures, parts identical to those in Figures 1 to 21 are not specifically described.

[0289] Referring to Figure 22, the moisture-proof structure MPS may include a plurality of insulating films, undercut regions UCA, metal layers MTL, stepped portions STP, and etch stop layers ESL. The plurality of insulating films, undercut regions UCA, and metal layers MTL shown in Figure 22 may have the same structure as those shown in Figure 21, and therefore will not be described in detail.

[0290] Referring to Figure 22, compared to some insulating films that form the undercut region UCA on the stepped portion STP, the etch stop layer ESL is designed to extend further in the first direction (e.g., the lateral direction), but the extended portion can have a relatively small thickness. In other words, in the portion that extends further than some insulating films, the upper part of the etch stop layer ESL can be etched during the etching process to form the etch stop residue film ESRL. The etch stop layer ESL may contain the same material as the second gate electrode GAT2. For example, the etch stop layer ESL may be composed of a Mo / Ti bilayer or a Mo monolayer, and the etch stop residue film ESRL may be a Ti residue film of a Mo / Ti bilayer or a Mo residue film of a Mo monolayer.

[0291] Referring to Figure 22, the third portion TPEL of the luminescent layer EL can be disposed on the stepped portion STP to cover the side surface SSX of the second interlayer insulating film ILD2 and the side surface SSY of the etch stop layer ESL, and to cover the upper surface and side surface of the etch stop residue film ESRL. The third portion TPEL of the luminescent layer EL can be separated from the second portion SPEL of the luminescent layer EL, and the third portion TPEL of the luminescent layer EL and the second portion SPEL of the luminescent layer EL can overlap each other on a plane.

[0292] The third part of the cathode electrode CE, TPCE, can be placed on the third part of the light-emitting layer EL, TPEL. Although the third part of the cathode electrode CE, TPCE, is separated from the second part of the cathode electrode CE, the third part of the cathode electrode CE, TPCE, and the second part of the cathode electrode CE, SPCE, can overlap each other in a plane.

[0293] Figure 23 is an exemplary cross-sectional schematic diagram of the moisture-proof structure MPS shown in Figures 15 to 17. In the following description of the embodiment shown in Figure 23, unless otherwise specifically described, the contents may be the same as those described above with reference to Figures 1 to 22.

[0294] Referring to Figure 23, the moisture-proof structure MPS may include multiple insulating films, undercut regions UCA, metal layers MTL, stepped portions STP, and etch stop layers ESL. The multiple insulating films, undercut regions UCA, and metal layers MTL shown in Figure 23 may have the same structure as those shown in Figure 21, therefore, they will not be described in detail again.

[0295] Referring to Figure 23, the undercut region UCA can be formed within the region of the insulating film comprising the second gate insulating film GI2, the second interlayer insulating film ILD2, and the etch stop layer ESL. For example, the etch stop layer ESL can be disposed between the second gate insulating film GI2 and the second interlayer insulating film ILD2, located below the metal layer MTL. The etch stop layer ESL can contain the same material as the second gate electrode GAT2. For example, the etch stop layer ESL can be composed of a Mo / Ti bilayer or a Mo monolayer. The light-emitting layer EL can be broken at the undercut region UCA. Unlike the etch stop layer ESL shown in Figure 21 or Figure 22, the etch stop layer ESL may not extend in the first direction (e.g., the lateral direction) on the step portion STP and can be disposed between the insulating films. In other words, during the etching process, the etch stop layer ESL can be over-etched to be partially etched and removed.

[0296] Referring to Figure 23, the third portion TPEL of the light-emitting layer EL can be disposed on the stepped portion STP to cover the side surface SSX of the second interlayer insulating film ILD2 and the side surface SSY of the etch stop layer ESL, and to cover the upper surface UPZ and side surface SSZ of the second gate insulating film GI2. The third portion TPEL of the light-emitting layer EL can be separated from the second portion SPEL of the light-emitting layer EL, and the third portion TPEL of the light-emitting layer EL and the second portion SPEL of the light-emitting layer EL can overlap each other in a plane.

[0297] The third part of the cathode electrode CE, TPCE, can be placed on the third part of the light-emitting layer EL, TPEL. Although the third part of the cathode electrode CE, TPCE, is separated from the second part of the cathode electrode CE, the third part of the cathode electrode CE, TPCE, and the second part of the cathode electrode CE, SPCE, can overlap each other in a plane.

[0298] Figure 24 is a cross-sectional schematic diagram of the moisture-proof structure MPS shown in Figures 15 to 17. In the following description of the embodiment shown in Figure 24, no content identical to that in Figures 1 to 23 will be specifically described.

[0299] Referring to Figure 24, the moisture-proof structure MPS may include an undercut region UCA of at least one of a plurality of insulating films. In the embodiment shown in Figure 24, the undercut region UCA may be formed between the first buffer layer BUF1 and the second interlayer insulating film ILD2. The light-emitting layer EL may be interrupted at the undercut region UCA. The plurality of insulating films shown in Figure 24 may have the same structure as the plurality of insulating films shown in Figure 18, and therefore will not be described further.

[0300] The moisture-proof structure MPS may include a metal layer MTL placed on the undercut region UCA. The metal layer MTL may have, for example, the same structure as the second source-drain. The light-emitting layer EL may be disconnected on the side of the metal layer MTL. The metal layer MTL shown in Figure 24 may have the same structure as the metal layer MTL shown in Figure 18, and will not be described again.

[0301] The moisture-proof structure MPS may include an etch stop layer ESL disposed in or below the undercut region UCA. The etch stop layer ESL may also be referred to as an auxiliary metal layer AML. Referring to FIG24, the etch stop layer ESL may be disposed between multiple insulating films disposed below the metal layer MTL. For example, the etch stop layer ESL may be disposed between a first interlayer insulating film ILD1 and a second buffer layer BUF2 disposed below the metal layer MTL. Compared with some of the insulating films forming the undercut region UCA, the etch stop layer ESL may be configured to extend further in a first direction (e.g., the lateral direction). For example, the etch stop layer ESL may be disposed on the first interlayer insulating film ILD1 to extend beyond a portion of the insulating films, such as the second buffer layer BUF2, the second gate insulating film GI2, and the second interlayer insulating film ILD2.

[0302] The etch stop layer (ESL) can contain metallic materials. For example, the ESL can contain one or more layers of molybdenum (Mo), copper (Cu), titanium (Ti), aluminum (Al), chromium (Cr), gold (Au), nickel (Ni), neodymium (Nd), and tungsten (W), or alloys thereof, but is not limited to these. For example, the ESL can contain the same material as the metallic pattern TM. For example, the ESL can consist of a molybdenum / titanium (Mo / Ti) bilayer or a molybdenum (Mo) monolayer.

[0303] An etch stop layer (ESL) can prevent over-etching in an etching process that patterns multiple insulating films, or prevent the patterning of metals such as the anode electrode (AE) in a process that forms a moisture-proof structure (MPS). For example, in the embodiment shown in FIG24, the undercut region (UCA) can be formed in a structure in which a portion of the second buffer layer (BUF2), the second gate insulating film (GI2), and the second interlayer insulating film (ILD2) disposed on the etch stop layer (ESL) is etched, but the etch stop layer (ESL) is not etched.

[0304] Referring to Figure 24, the light-emitting layer (EL) can have several parts. As mentioned earlier, the EL can include a first part (FPEL), a second part (SPEL), and a third part (TPEL). This EL can further include a fourth part (FRPEL). As shown in the figure, the first part (FPEL), the second part (SPEL), the third part (TPEL), and the fourth part (FRPEL) of the EL can be spaced apart from each other. The first part (FPEL), the second part (SPEL), the third part (TPEL), and the fourth part (FRPEL) of the EL can be separated from each other.

[0305] Here, the second portion of the light-emitting layer EL, SPEL, can be placed on the first layer M1 of the metal layer MTL. Compared to certain insulating films, the first layer M1 of the metal layer MTL can extend further in a first direction (e.g., the lateral direction) to form an undercut region UCA. For example, the first layer M1 of the metal layer MTL can extend further than a portion of insulating films such as the second buffer layer BUF2, the second gate insulating film GI2, and the second interlayer insulating film ILD2 to form the undercut region UCA.

[0306] The third portion (TPEL) of the emitting layer (EL) can be located adjacent to the undercut region (UCA). For example, the third portion (TPEL) of the emitting layer (EL) can cover the surface above the etch stop layer (ESL) and simultaneously cover the side surface of the insulating film containing the second interlayer insulating film (ILD2), the second gate insulating film (GI2), and the second buffer layer (BUF2). The third portion (TPEL) of the emitting layer (EL) can be separated from the second portion (SPEL) of the emitting layer (EL), and the third portion (TPEL) and the second portion (SPEL) of the emitting layer (EL) can overlap each other in a plane.

[0307] The fourth portion of the light-emitting layer EL, FRPEL, may be placed on the metal layer MTL. The third layer M3 of the metal layer MTL may extend further than a portion of the second layer M2 of the metal layer MTL in a first direction (e.g., the lateral direction). For example, the fourth portion of the light-emitting layer EL, FRPEL, may be placed on an extension of the third layer M3 of the metal layer MTL. The fourth portion of the light-emitting layer EL, FRPEL, and the second portion of the light-emitting layer EL, SPEL, are placed on the first layer M1 of the metal layer MTL, but the fourth portion of the light-emitting layer EL, FRPEL, is placed directly on the third layer M3 of the metal layer MTL, and the second portion of the light-emitting layer EL, SPEL, is placed directly on the first layer M1 of the metal layer MTL.

[0308] Furthermore, the cathode electrode CE can have several parts. As mentioned earlier, the cathode electrode CE can include a first part FPCE, a second part SPCE, and a third part TPCE. The cathode electrode CE can further include a fourth part FRPCE. As shown in the figure, the first part FPCE, the second part SPCE, the third part TPCE, and the fourth part FRPCE of the cathode electrode CE can be spaced apart from each other. More specifically, the first part FPCE, the second part SPCE, the third part TPCE, and the fourth part FRPCE of the cathode electrode CE can be separated from each other.

[0309] Here, the second part SPCE of the cathode electrode CE can be placed on the first layer M1 of the metal layer MTL. For example, the second part SPCE of the cathode electrode CE can be placed on the second part SPEL of the light-emitting layer EL.

[0310] The third portion TPCE of the cathode electrode CE can be placed adjacent to the undercut region UCA. For example, the third portion TPCE of the cathode electrode CE can be placed on the third portion TPEL of the light-emitting layer EL. Although the third portion TPCE of the cathode electrode CE is separated from the second portion SPCE of the cathode electrode CE, the third portion TPCE of the cathode electrode CE and the second portion SPCE of the cathode electrode CE can overlap each other on a plane.

[0311] The fourth portion FRPCE of the cathode electrode CE can be placed on the metal layer MTL. For example, the fourth portion FRPCE of the cathode electrode CE can be placed on the fourth portion FRPEL of the light-emitting layer EL. Both the fourth portion FRPCE of the cathode electrode CE and the fourth portion FRPEL of the light-emitting layer EL can be separated from the second layer M2 of the metal layer MTL. Both the fourth portion FRPCE of the cathode electrode CE and the second portion SPCE of the cathode electrode CE can be located on the first layer M1 of the metal layer MTL. Furthermore, the fourth portion FRPCE of the cathode electrode CE can be in direct contact with the fourth portion FRPEL of the light-emitting layer EL, and the second portion SPCE of the cathode electrode CE can be in direct contact with the second portion SPEL of the light-emitting layer EL. This structure is also shown in Figures 25 to 29, and the same structure will not be described again.

[0312] Figure 25 is an exemplary cross-sectional schematic diagram of the moisture-proof structure MPS shown in Figures 15 to 17. Hereinafter, in describing the embodiments shown in the figures, the aforementioned embodiments not specifically described may be the same as those in Figures 1 to 24.

[0313] Referring to Figure 25, the moisture-proof structure MPS may include multiple insulating films, undercut regions UCA, metal layers MTL, and etch stop layers ESL. The multiple insulating films, undercut regions UCA, and metal layers MTL shown in Figure 25 may have the same structure as those shown in Figure 24, and therefore will not be described in detail.

[0314] Referring to Figure 25, the etch stop layer ESL can be disposed between the first interlayer insulating film ILD1 and the second buffer layer BUF2, which are placed below the metal layer MTL. Compared to some insulating films that form the undercut region UCA, the etch stop layer ESL is designed to extend further in a first direction (e.g., the lateral direction), but the extended portion can have a relatively small thickness. In other words, in the portion that extends further than some insulating films, the upper part of the etch stop layer ESL can be etched in the etching process to form the etch stop residue film ESRL. The etch stop layer ESL can contain the same material as the metal pattern TM. For example, the etch stop layer ESL can be composed of a Mo / Ti bilayer or a Mo monolayer, and the etch stop residue film ESRL can be a Ti residue film of a Mo / Ti bilayer or a Mo residue film of a Mo monolayer.

[0315] The third portion (TPEL) of the luminescent layer (EL) can be positioned adjacent to the undercut region (UCA). For example, the third portion (TPEL) of the luminescent layer (EL) can cover the side surface of the etch stop layer (ESL) and the upper surface of the etch stop residue film (ESRL), while also covering the side surface of the insulating film comprising the second interlayer insulating film (ILD2), the second gate insulating film (GI2), and the second buffer layer (BUF2). The third portion (TPEL) of the luminescent layer (EL) can be spaced apart from the second portion (SPEL) of the luminescent layer (EL), and the third portion (TPEL) and the second portion (SPEL) of the luminescent layer (EL) can overlap each other in a plane.

[0316] The third portion TPCE of the cathode electrode CE can be positioned adjacent to the undercut region UCA. For example, the third portion TPCE of the cathode electrode CE can be placed on the third portion TPEL of the light-emitting layer EL. Although the third portion TPCE of the cathode electrode CE is separated from the second portion SPCE of the cathode electrode CE, the third portion TPCE of the cathode electrode CE and the second portion SPCE of the cathode electrode CE can overlap each other on a plane.

[0317] Figure 26 is an example cross-sectional schematic diagram of the moisture-proof structure MPS shown in Figures 15 to 17. Hereinafter, in describing the embodiment shown in Figure 26, parts that are identical to those in the aforementioned embodiments with reference to Figures 1 to 25 will not be specifically described.

[0318] Referring to Figure 26, the moisture-proof structure MPS may include multiple insulating films, undercut regions (UCA), metal layers (MTL), and etch stop layers (ESL). The multiple insulating films and metal layers (MTL) shown in Figure 26 may have the same structure as those shown in Figure 24, and therefore will not be described further.

[0319] Referring to Figure 26, the undercut region UCA can be formed within the region containing an insulating film, which includes an active buffer layer ABUF to a second interlayer insulating film ILD2 and an etch stop layer ESL. For example, the etch stop layer ESL can be disposed between the first interlayer insulating film ILD1 and the second buffer layer BUF2 located below the metal layer MTL. The etch stop layer ESL can contain the same material as the metal pattern TM. For example, the etch stop layer ESL can be composed of a Mo / Ti bilayer or a Mo monolayer. The light-emitting layer EL can be interrupted at the undercut region UCA. Unlike the etch stop layer ESL shown in Figures 24 or 25, the etch stop layer ESL may not extend in the first direction (e.g., the lateral direction) and can be disposed between the insulating films. In other words, during the etching process, the etch stop layer ESL can be over-etched so that multiple insulating films located below this etch stop layer ESL are etched and removed together.

[0320] Referring to Figure 26, the third portion TPEL of the light-emitting layer EL can be positioned adjacent to the undercut region UCA. For example, the third portion TPEL of the light-emitting layer EL can cover the sides of the second buffer layer BUF2 and the sides of the etch stop layer ESL, and can also cover the sides of the insulating film including the first interlayer insulating film ILD1, the first gate insulating film GI1, and the first buffer layer BUF1, as well as the upper surface of the first buffer layer BUF1. The third portion TPEL of the light-emitting layer EL can be separated from the second portion SPEL of the light-emitting layer EL, and the third portion TPEL of the light-emitting layer EL and the second portion SPEL of the light-emitting layer EL can overlap each other in a plane.

[0321] The third portion TPCE of the cathode electrode CE can be positioned adjacent to the undercut region UCA. For example, the third portion TPCE of the cathode electrode CE can be placed on the third portion TPEL of the light-emitting layer EL. Although the third portion TPCE of the cathode electrode CE is separated from the second portion SPCE of the cathode electrode CE, the third portion TPCE and the second portion SPCE of the cathode electrode CE can overlap each other in a plane.

[0322] Figure 27 is an exemplary cross-sectional schematic diagram of the moisture-proof structure MPS shown in Figures 15 to 17. Hereinafter, in describing the embodiment shown in Figure 27, there is no specific description of content that may be the same as the embodiments described above with reference to Figures 1 to 26.

[0323] Referring to FIG27, the moisture-proof structure MPS may include an undercut region UCA of at least one of a plurality of insulating films. In the embodiment shown in FIG27, the undercut region UCA may be formed on the first interlayer insulating film ILD1 to the second interlayer insulating film ILD2. The light-emitting layer EL may be interrupted at the undercut region UCA. The plurality of insulating films shown in FIG27 may have the same structure as the plurality of insulating films shown in FIG24, and therefore will not be described in detail.

[0324] The moisture-proof structure MPS shown in Figure 27 may differ from the moisture-proof structure MPS shown in Figure 24 in the shape of the undercut region UCA. In the moisture-proof structure MPS shown in Figure 27, the undercut region UCA may include a stepped portion STP.

[0325] A stepped portion STP can refer to a step formed when some insulating films and etch stop layers (ESL) are not etched inward in the portion below the metal layer MTL in the undercut region UCA. For example, when the second interlayer insulating film ILD2, the second gate insulating film GI2, and the second buffer layer BUF2 are etched inward in the portion below the metal layer MTL, but the first interlayer insulating film ILD1, the first gate insulating film GI1, and the etch stop layer ESL are not etched inward in the portion below the metal layer MTL, the stepped portion STP may include the etch stop layer ESL, the first interlayer insulating film ILD1, and the first gate insulating film GI1.

[0326] The etch stop layer (ESL) can contain the same material as the metal pattern TM. For example, the etch stop layer (ESL) can consist of a Mo / Ti bilayer or a Mo monolayer.

[0327] Referring to Figure 27, the third portion TPEL of the light-emitting layer EL can be disposed on the stepped portion STP to cover the side surfaces of the second interlayer insulating film ILD2, the second gate insulating film GI2, and the second buffer layer BUF2, as well as the upper surface and side surfaces of the etch stop layer ESL. The third portion TPEL of the light-emitting layer EL can be separated from the second portion SPEL of the light-emitting layer EL, and the third portion TPEL of the light-emitting layer EL and the second portion SPEL of the light-emitting layer EL can overlap each other in a plane.

[0328] The third part of the cathode electrode CE, TPCE, can be placed on the third part of the light-emitting layer EL, TPEL. Although the third part of the cathode electrode CE, TPCE, is separated from the second part of the cathode electrode CE, the third part of the cathode electrode CE, TPCE, and the second part of the cathode electrode CE, SPCE, can overlap each other in a plane.

[0329] Figure 28 is an exemplary cross-sectional schematic diagram showing the moisture-proof structure MPS shown in Figures 15 to 17. Hereinafter, when describing the display device according to the embodiments shown in the figures, parts identical to those in Figures 1 to 27 are not specifically described.

[0330] Referring to Figure 28, the moisture-proof structure MPS may include a plurality of insulating films, undercut regions UCA, metal layers MTL, stepped portions STP, and etch stop layers ESL. The plurality of insulating films, undercut regions UCA, and metal layers MTL shown in Figure 28 may have the same structure as those shown in Figure 24, and therefore will not be described in detail.

[0331] Referring to Figure 28, compared to some insulating films forming the undercut region UCA on the stepped portion STP, the etch stop layer ESL is configured to extend further in a first direction (e.g., the lateral direction), but the extended portion can have a relatively small thickness. In other words, in the portion extending further than some insulating films, the upper part of the stop layer ESL can be etched in the etching process to form an etch stop residue film ESRL. The etch stop layer ESL can contain the same material as the metal pattern TM. For example, the etch stop layer ESL can be composed of a Mo / Ti bilayer or a Mo monolayer, and the etch stop residue film ESRL can be a Ti residue film of a Mo / Ti bilayer or a Mo residue film of a Mo monolayer.

[0332] Referring to Figure 28, the third portion TPEL of the light-emitting layer EL can be disposed on the stepped portion STP, thereby covering the side surface SS1 of the second interlayer insulating film ILD2, the side surface SS2 of the second gate insulating film GI2, the side surface SS3 of the second buffer layer BUF2, and the side surface SS4 of the etch stop layer ESL, and also covering the upper surface USS and side surface SSS of the etch stop residue film ESRL. The third portion TPEL of the light-emitting layer EL can be separated from the second portion SPEL of the light-emitting layer EL, and the third portion TPEL of the light-emitting layer EL and the second portion SPEL of the light-emitting layer EL can overlap each other in a plane.

[0333] Although Figure 28 does not explicitly show the third portion TPEL of the light-emitting layer EL disposed on the stepped portion STP of the side SS1 covering the second interlayer insulating film ILD2, in other embodiments, the third portion TPEL of the light-emitting layer EL may cover the side SS1 of the second interlayer insulating film ILD2.

[0334] The third part of the cathode electrode CE, TPCE, can be placed on the third part of the light-emitting layer EL, TPEL. Although the third part of the cathode electrode CE, TPCE, is separated from the second part of the cathode electrode CE, the third part of the cathode electrode CE, TPCE, and the second part of the cathode electrode CE, SPCE, can overlap each other in a plane.

[0335] Figure 29 is a cross-sectional schematic diagram of the moisture-proof structure MPS shown in Figures 15 to 17. In the following description of the embodiment shown in Figure 29, no content identical to that in Figures 1 to 28 is specifically described.

[0336] Referring to Figure 29, the moisture-proof structure MPS may include a plurality of insulating films, undercut regions UCA, metal layers MTL, stepped portions STP, and etch stop layers ESL. The plurality of insulating films, undercut regions UCA, and metal layers MTL shown in Figure 29 may have the same structure as the plurality of insulating films and metal layers MTL shown in Figure 24, therefore, they will not be described in detail again.

[0337] Referring to Figure 29, the undercut region UCA can be formed within a region comprising multiple insulating films, including a second interlayer insulating film ILD2, a second gate insulating film GI2, a second buffer layer BUF2, and an etch stop layer ESL. For example, the etch stop layer ESL can be disposed between the first interlayer insulating film ILD1 and the second buffer layer BUF2, located below the metal layer MTL. The etch stop layer ESL can contain the same material as the metal pattern TM. For example, the etch stop layer ESL can be composed of a Mo / Ti bilayer or a Mo monolayer. The light-emitting layer EL can be interrupted at the undercut region UCA. Unlike the etch stop layer ESL shown in Figures 27 or 28, the etch stop layer ESL may not extend in a first direction (e.g., a lateral direction) on the step portion STP and can be disposed between the insulating films. In other words, during the etching process, the etch stop layer ESL can be over-etched to partially etch and remove it.

[0338] Referring to Figure 29, the third portion TPEL of the light-emitting layer EL can be disposed on the stepped portion STP to cover the side surfaces of the second interlayer insulating film ILD2, the second gate insulating film GI2, the second buffer layer BUF2, and the etch stop layer ESL, and also cover the upper surface and side surfaces of the first interlayer insulating film ILD1. The third portion TPEL of the light-emitting layer EL can be separated from the second portion SPEL of the light-emitting layer EL, and the third portion TPEL of the light-emitting layer EL and the second portion SPEL of the light-emitting layer EL can overlap each other in a plane.

[0339] Although the figure does not explicitly show the third portion TPEL of the light-emitting layer EL disposed on the stepped portion STP covering the side SS1 of the second interlayer insulating film ILD2, in other embodiments, the third portion TPEL of the light-emitting layer EL may cover the side SS1 of the second interlayer insulating film ILD2.

[0340] The third part of the cathode electrode CE, TPCE, can be placed on the third part of the light-emitting layer EL, TPEL. Although the third part of the cathode electrode CE, TPCE, is separated from the second part of the cathode electrode CE, the third part of the cathode electrode CE, TPCE, and the second part of the cathode electrode CE, SPCE, can overlap each other on a plane.

[0341] Figure 30 is a schematic cross-sectional view of a display device 100 according to an embodiment of the present disclosure. Hereinafter, in the description of the embodiment shown in Figure 30, there is no specific description of the same content as that described with reference to Figures 1 to 29 of the display device.

[0342] The difference between the display device according to the embodiment shown in FIG. 30 and the display devices shown in FIG. 15 to FIG. 17 is that the disconnected portion is not placed in the outer disconnected portion region OSTA and the inner disconnected portion region ISTA, while the moisture-proof structure MPS is completely placed in the outer disconnected portion region OSTA and the inner disconnected portion region ISTA. Furthermore, the structure of the moisture-proof structure MPS is also different from that of the display devices shown in FIG. 15 to FIG. 17.

[0343] Referring to FIG30, the display device 100 may include a moisture-proof structure MPS. The moisture-proof structure MPS may be disposed in the external disconnected portion region OSTA and the internal disconnected portion region ISTA. For example, the moisture-proof structure MPS may be disposed between the display area DA and the dam structure DAM, and on a plane disposed between the camera aperture CH and the dam structure DAM.

[0344] The moisture-proof structure MPS may include at least one undercut region UCA among a plurality of insulating films. The moisture-proof structure MPS may include an undercut region in an insulating film located below a plurality of light-emitting elements ED. Except that an auxiliary metal layer AML is disposed therein, in which the moisture-proof structure MPS is placed between the insulating films within the undercut region UCA, the display device 100 shown in FIG30 may have the same configuration as the display device 100 shown in FIG13.

[0345] Referring to Figure 30, the moisture-proof structure MPS may be contained within or below the undercut region UCA in an auxiliary metal layer AML. During the formation of the moisture-proof structure MPS, the auxiliary metal layer AML can serve as an etch stop layer ESL during the etching of the metal layers. In the description of this disclosure, the auxiliary metal layer AML and the etch stop layer ESL may have the same meaning.

[0346] The auxiliary metal layer AML may comprise a metallic material. For example, the auxiliary metal layer AML may comprise a single layer or multiple layers of any of molybdenum (Mo), copper (Cu), titanium (Ti), aluminum (Al), chromium (Cr), gold (Au), nickel (Ni), neodymium (Nd), and tungsten (W), or alloys thereof, but this disclosure is not limited thereto. The auxiliary metal layer AML may comprise the same material as the first gate electrode GAT1, the second gate electrode GAT2, or the metal pattern TM. For example, the auxiliary metal layer AML may be formed of a bilayer or a single layer of Mo.

[0347] Figure 31 is a cross-sectional schematic diagram of the moisture-proof structure MPS shown in Figure 30. In the following description of the embodiment shown in Figure 31, no content identical to that in Figures 1 to 30 will be specifically described.

[0348] Referring to Figure 31, the moisture-proof structure MPS may include at least one undercut region UCA from a plurality of insulating films. The undercut region UCA may be placed in an organic insulating film disposed on a substrate SUB and positioned below a plurality of light-emitting elements. The placement of the undercut region UCA in the organic insulating film may mean that at least one organic insulating film is etched to form the undercut region UCA. The organic insulating film in which the undercut region UCA is formed may be, for example, at least one of a first planarization layer PLN1 and a second planarization layer PLN2. Although an embodiment of the moisture-proof structure MPS including a first planarization layer PLN1 and an undercut region UCA formed in the first planarization layer PLN1 is illustrated, the embodiments disclosed herein are not limited to these embodiments. For example, embodiments of the present invention may include the following: the moisture-proof structure MPS includes one or more of a first planarization layer PLN1 and a second planarization layer PLN2, and the undercut region UCA is formed in one or more of the first planarization layer PLN1 and the second planarization layer PLN2.

[0349] The moisture-proof structure MPS may include a recess CONC of at least one of a plurality of insulating films. For example, the recess CONC may be placed in an inorganic insulating film disposed on a substrate SUB and positioned below a plurality of light-emitting elements. The recess CONC being located in an inorganic insulating film may mean that one or more inorganic insulating films are etched to form the recess CONC. The inorganic insulating film may be an inorganic insulating film located on the substrate SUB and below the light-emitting elements. For example, the inorganic insulating film may be one or more of a first buffer layer BUF1, a second interlayer insulating film ILD2, and an insulating film located between the two layers. Figure 31 shows an embodiment in which the second interlayer insulating film ILD2 includes the recess CONC, but the embodiments disclosed herein are not limited to these embodiments.

[0350] The recess UCA of the organic insulating film can be placed in the recess CONC. A portion of the etch stop layer ESL disposed on the inorganic insulating film can be exposed through the undercut region UCA of the organic insulating film. For example, the etch stop layer ESL can be exposed through the undercut region UCA of the organic insulating film, and the light-emitting layer EL can be located on the exposed etch stop layer ESL.

[0351] The moisture-proof structure MPS may include a metal layer MTL placed on the undercut region UCA. For example, the metal layer MTL may be a second source-drain electrode. The light-emitting layer EL may be disconnected on the side of the metal layer MTL. The metal layer MTL shown in Figure 31 may have the same structure as the metal layer MTL shown in Figure 14, and therefore will not be described in detail.

[0352] The moisture-proof structure MPS may include an etch stop layer ESL located within or below the undercut region UCA. The etch stop layer ESL may be an auxiliary metal layer AML. Referring to FIG31, the etch stop layer ESL may be disposed between multiple insulating films placed below the metal layer MTL. The etch stop layer ESL may be configured to be placed in a recess CONC. For example, the etch stop layer ESL may be configured to extend to be placed in the recess CONC, while being partially disposed between the second gate insulating film GI2 and the second interlayer insulating film ILD2 located below the metal layer MTL. An organic insulating film may be disposed on a portion of the etch stop layer ESL disposed in the recess CONC. For example, the etch stop layer ESL may be exposed through the undercut region UCA of the organic insulating film, and the light-emitting layer EL may be placed on the exposed etch stop layer ESL.

[0353] The etch stop layer (ESL) may contain a metallic material. For example, the ESL may contain a single layer or multiple layers of any of molybdenum (Mo), copper (Cu), titanium (Ti), aluminum (Al), chromium (Cr), gold (Au), nickel (Ni), neodymium (Nd), and tungsten (W), or alloys thereof, but this disclosure is not limited thereto. The ESL may contain the same material as the second gate electrode GAT2. For example, the ESL may consist of a molybdenum / titanium (Mo / Ti) bilayer or a molybdenum (Mo) monolayer.

[0354] The etch stop layer (ESL) can prevent over-etching of some insulating films disposed beneath the recess CONC during the etching process by patterning multiple insulating films or metals such as the anode electrode AE ​​or metal layer MTL during the formation of the moisture-proof structure MPS. For example, in the embodiment shown in FIG31, the undercut region UCA can be formed in a structure in which a portion of the second interlayer insulating film ILD2 disposed on the etch stop layer ESL is etched, but the stop layer ESL is not etched.

[0355] Referring to Figure 31, the light-emitting layer (EL) can have several parts. As mentioned earlier, the EL can include a first part (FPEL), a second part (SPEL), and a third part (TPEL). The first part (FPEL) of the EL can be positioned to overlap with the light-emitting region (EA) on a plane. As shown, the first part (FPEL), the second part (SPEL), and the third part (TPEL) of the EL can be spaced apart from each other. The first part (FPEL), the second part (SPEL), and the third part (TPEL) of the EL can also be separated from each other.

[0356] Here, the second portion of the light-emitting layer EL, SPEL, can be placed on the first layer M1 of the metal layer MTL. Compared to certain insulating films, the first layer M1 of the metal layer MTL can extend further in a first direction (e.g., the lateral direction) to form an undercut region UCA. For example, the first layer M1 of the metal layer MTL can extend beyond a portion of an insulating film such as the second interlayer insulating film ILD2 to form the undercut region UCA.

[0357] The third portion (TPEL) of the emitting layer (EL) can be positioned adjacent to the undercut region (UCA). For example, the third portion (TPEL) of the emitting layer (EL) can be located below the second portion (SPEL) of the emitting layer (EL). For example, the third portion (TPEL) of the emitting layer (EL) can be placed on the recess (CONC). The third portion (TPEL) of the emitting layer (EL) can be positioned on the etch stop layer (ESL) disposed in the recess (CONC). The third portion (TPEL) of the emitting layer (EL) can be spaced apart from the second portion (SPEL) of the emitting layer (EL), and the third portion (TPEL) and the second portion (SPEL) of the emitting layer (EL) can overlap each other in a plane.

[0358] Furthermore, the cathode electrode CE can have several parts. The cathode electrode CE can include a first part FPCE, a second part SPCE, and a third part TPCE. The cathode electrode CE can be positioned such that the first part FPCE overlaps with the light-emitting region EA on a plane. As shown in the figure, the first part FPCE, the second part SPCE, and the third part TPCE of the cathode electrode CE can be spaced apart from each other. Alternatively, the first part FPCE, the second part SPCE, and the third part TPCE of the cathode electrode CE can be separated from each other.

[0359] Here, the second portion SPCE of the cathode electrode CE can be placed on the first layer M1 of the metal layer MTL. For example, the second portion SPCE of the cathode electrode CE can be placed on a portion of the light-emitting layer EL that is positioned separately from the second portion SPEL of the light-emitting layer EL. The second portion SPCE of the cathode electrode CE can also be placed on the third layer M3 of the metal layer MTL. As shown in Figure 31, the second portion SPCE of the cathode electrode CE may not be in direct contact with the second portion SPEL of the light-emitting layer EL.

[0360] The third portion TPCE of the cathode electrode CE can be located adjacent to the undercut region UCA. For example, the third portion TPCE of the cathode electrode CE can be placed on the third portion TPEL of the light-emitting layer EL. Although the third portion TPCE of the cathode electrode CE is separated from the second portion SPCE of the cathode electrode CE, the third portion TPCE of the cathode electrode CE and the second portion SPCE of the cathode electrode CE can overlap each other on a plane.

[0361] Figure 32 is an exemplary cross-sectional schematic diagram of the moisture-proof structure MPS shown in Figure 30. Hereinafter, in describing the embodiment shown in Figure 32, the content not specifically described is the same as that described in the foregoing embodiments referring to Figures 1 to 31.

[0362] Referring to Figure 32, the moisture-proof structure MPS may include multiple insulating films, undercut regions UCA, metal layers MTL, and etch stop layers ESL. The multiple insulating films, undercut regions UCA, metal layers MTL, and recesses CONC shown in Figure 32 may have the same structure as the multiple insulating films, undercut regions UCA, metal layers MTL, and recesses CONC shown in Figure 31, and therefore will not be described in detail.

[0363] Referring to Figure 32, an etch stop layer (ESL) can be disposed between a plurality of insulating films located below the metal layer (MTL). The etch stop layer (ESL) can be configured to be placed in a recess of the CONC. For example, the etch stop layer (ESL) can be configured to extend into the recess CONC, while being partially disposed between the second gate insulating film GI2 and the second interlayer insulating film ILD2 located below the metal layer MTL. The extended portion allows the portion of the etch stop layer (ESL) disposed in the recess of the CONC to have a relatively small thickness. That is, during the etching process, the upper part of the etch stop layer (ESL) located on the recess CONC can be partially etched to form an etch stop residue film (ESRL). In this case, the etch stop residue film (ESRL) can be a Ti residue film of Mo / Ti bilayer, or a Mo residue film of Mo monolayer. An organic insulating film can be disposed on a portion of the etch stop residue film (ESRL) disposed within the recess CONC. For example, the etch stop residue film (ESRL) can be exposed through the undercut region (UCA) of the organic insulating film, and a light-emitting layer (EL) can be disposed on the exposed etch stop residue film (ESRL).

[0364] Referring to Figure 32, the third portion TPEL of the luminescent layer EL can be positioned adjacent to the undercut region UCA. For example, the third portion TPEL of the luminescent layer EL can be located below the second portion SPEL of the luminescent layer EL. For example, the third portion TPEL of the luminescent layer EL can be placed on the recess CONC. The third portion TPEL of the luminescent layer EL can be positioned on the etch stop residue film ESRL disposed in the recess CONC. The third portion TPEL of the luminescent layer EL can be spaced apart from the second portion SPEL of the luminescent layer EL, and the third portion TPEL of the luminescent layer EL and the second portion SPEL of the luminescent layer EL can overlap each other on a plane.

[0365] The third portion TPCE of the cathode electrode CE can be located adjacent to the undercut region UCA. For example, the third portion TPCE of the cathode electrode CE can be placed on the third portion TPEL of the light-emitting layer EL. Although the third portion TPCE of the cathode electrode CE is separated from the second portion SPCE of the cathode electrode CE, the third portion TPCE of the cathode electrode CE and the second portion SPCE of the cathode electrode CE can overlap each other on a plane.

[0366] Figure 33 is an exemplary cross-sectional schematic diagram of the moisture-proof structure MPS shown in Figure 30. Hereinafter, in describing the embodiment shown in Figure 33, the contents not specifically described are the same as those described in the aforementioned embodiments referring to Figures 1 to 32.

[0367] Referring to Figure 33, the moisture-proof structure MPS may include multiple insulating films, undercut regions UCA, metal layers MTL, and etch stop layers ESL. The multiple insulating films, undercut regions UCA, metal layers MTL, and recesses CONC shown in Figure 33 may have the same structure as the multiple insulating films, undercut regions UCA, metal layers MTL, and recesses CONC shown in Figure 31, and therefore will not be described in detail.

[0368] Referring to Figure 33, the etch stop layer ESL can be disposed between a plurality of insulating films located below the metal layer MTL. For example, the etch stop layer ESL can be partially disposed between the second gate insulating film GI2 and the second interlayer insulating film ILD2 located below the metal layer MTL. Unlike the etch stop layer ESL shown in Figures 31 or 32, the etch stop layer ESL can be disposed between the insulating films without being placed on the recess CONC. For example, during the etching process, the etch stop layer ESL can be over-etched to partially etch and remove it. In other words, the etch stop layer ESL may not be disposed in the recess CONC. The organic insulating film can be disposed on a portion of the second gate insulating film GI2 disposed in the recess CONC. For example, the second gate insulating film GI2 can be exposed through the recess UCA of the organic insulating film, and the light-emitting layer EL can be placed on the exposed second gate insulating film GI2.

[0369] Referring to Figure 33, the third portion TPEL of the light-emitting layer EL can be positioned adjacent to the undercut region UCA. For example, the third portion TPEL of the light-emitting layer EL can be positioned below the second portion SPEL of the light-emitting layer EL. For example, the third portion TPEL of the light-emitting layer EL can be positioned on the recess CONC. The third portion TPEL of the light-emitting layer EL can be positioned on the second buffer layer BUF2 disposed in the recess CONC. The third portion TPEL of the light-emitting layer EL can be spaced apart from the second portion SPEL of the light-emitting layer EL, and the third portion TPEL of the light-emitting layer EL and the second portion SPEL of the light-emitting layer EL can overlap each other on a plane.

[0370] The third portion TPCE of the cathode electrode CE can be located adjacent to the undercut region UCA. For example, the third portion TPCE of the cathode electrode CE can be placed on the third portion TPEL of the light-emitting layer EL. Although the third portion TPCE of the cathode electrode CE is separated from the second portion SPCE of the cathode electrode CE, the third portion TPCE of the cathode electrode CE and the second portion SPCE of the cathode electrode CE can overlap each other on a plane.

[0371] Figure 34 is an exemplary cross-sectional schematic diagram of the moisture-proof structure MPS shown in Figure 30. Hereinafter, in describing the embodiments shown in the figures, content not specifically described may be the same as that described in the embodiments with reference to Figures 1 to 33.

[0372] Referring to Figure 34, the moisture-proof structure MPS may include multiple insulating films, undercut regions UCA, metal layers MTL, recesses CONC, and etch stop layers ESL. The multiple insulating films, undercut regions UCA, and metal layers MTL shown in Figure 34 may have the same structure as those shown in Figure 31, and therefore will not be described again.

[0373] The moisture-proof structure MPS may include a recess CONC of at least one of a plurality of insulating films. For example, the recess CONC may be placed in an inorganic insulating film disposed on a substrate SUB and below a plurality of light-emitting elements. The recess CONC being placed in an inorganic insulating film may mean that at least one of the inorganic insulating films is etched to form the recess CONC. The inorganic insulating film may be an inorganic insulating film located on the substrate SUB and below the light-emitting elements. For example, the inorganic insulating film may be a first buffer layer BUF1, a second interlayer insulating film ILD2, and one or more insulating films located between the two layers. Figure 34 illustrates one embodiment in which the second interlayer insulating film ILD2, the second gate insulating film GI2, and the second buffer layer BUF2 include the recess CONC; however, the embodiments disclosed herein are not limited to these embodiments.

[0374] The moisture-proof structure MPS may include an etch stop layer ESL disposed within or beneath the undercut region UCA. The etch stop layer ESL may be an auxiliary metal layer AML. Referring to Figure 34, the etch stop layer ESL may be disposed between multiple insulating films disposed beneath the metal layer MTL. The etch stop layer ESL may be configured to be placed in a recess CONC. For example, the etch stop layer ESL may be configured to extend into the recess CONC while being partially disposed between the first interlayer insulating film ILD1 and the second buffer layer BUF2 located beneath the metal layer MTL. An organic insulating film may be disposed on a portion of the etch stop layer ESL disposed in the recess CONC. For example, the etch stop layer ESL may be exposed through the undercut region UCA of the organic insulating film, and the light-emitting layer EL may be disposed on the exposed etch stop layer ESL.

[0375] The etch stop layer (ESL) can contain metallic materials. For example, the ESL can contain a single layer or multiple layers of any of molybdenum (Mo), copper (Cu), titanium (Ti), aluminum (Al), chromium (Cr), gold (Au), nickel (Ni), neodymium (Nd), and tungsten (W), or alloys thereof, but this disclosure is not limited thereto. The ESL can contain the same material as the metallic pattern TM. For example, the ESL can consist of a molybdenum / titanium (Mo / Ti) bilayer or a molybdenum (Mo) monolayer.

[0376] The etch stop layer (ESL) can prevent over-etching of some insulating films disposed beneath the recess CONC during the etching process by patterning multiple insulating films or metals such as the anode electrode AE ​​or metal layer MTL during the formation of the moisture-proof structure MPS. For example, in the embodiment shown in FIG34, the undercut region UCA can be formed in a structure in which a portion of the second interlayer insulating film ILD2 disposed on the etch stop layer ESL is etched, but the etch stop layer ESL is not etched.

[0377] Referring to Figure 34, the light-emitting layer EL can have several parts. As mentioned earlier, the light-emitting layer EL can include a first part FPEL, a second part SPEL, and a third part TPEL. The first part FPEL of the light-emitting layer EL can be positioned to overlap with the light-emitting region EA on a plane. As shown in the figure, the first part FPEL, the second part SPEL, and the third part TPEL of the light-emitting layer EL can be spaced apart from each other. The first part FPEL, the second part SPEL, and the third part TPEL of the light-emitting layer EL can also be separated from each other.

[0378] Here, the second portion of the light-emitting layer EL, SPEL, can be placed on the first layer M1 of the metal layer MTL. Compared to certain insulating films such as the second interlayer insulating film ILD2, the second gate insulating film GI2, and the second buffer layer BUF2, the first layer M1 of the metal layer MTL can extend further in a first direction (e.g., the lateral direction) to form an undercut region UCA. For example, the first layer M1 of the metal layer MTL can extend further than certain insulating films such as the second interlayer insulating film ILD2, the second gate insulating film GI2, and the second buffer layer BUF2 to form an undercut region UCA.

[0379] The third portion (TPEL) of the emitting layer (EL) can be located adjacent to the undercut region (UCA). For example, the third portion (TPEL) of the emitting layer (EL) can be located below the second portion (SPEL) of the emitting layer (EL). For example, the third portion (TPEL) of the emitting layer (EL) can be placed on the recess (CONC). The third portion (TPEL) of the emitting layer (EL) can be located on the etch stop layer (ESL) disposed in the recess (CONC). The third portion (TPEL) of the emitting layer (EL) can be spaced apart from the second portion (SPEL) of the emitting layer (EL), and the third portion (TPEL) and the second portion (SPEL) of the emitting layer (EL) can overlap each other in a plane.

[0380] Furthermore, the cathode electrode CE can have several parts. The cathode electrode CE can include a first part FPCE, a second part SPCE, and a third part TPCE. The cathode electrode CE can be positioned such that the first part FPCE overlaps with the light-emitting region EA on a plane. As shown in the figure, the first part FPCE, the second part SPCE, and the third part TPCE of the cathode electrode CE can be spaced apart from each other. Alternatively, the first part FPCE, the second part SPCE, and the third part TPCE of the cathode electrode CE can be separated from each other.

[0381] Here, the second part SPCE of the cathode electrode CE can be placed on the first layer M1 of the metal layer MTL. For example, the second part SPCE of the cathode electrode CE can be placed on a portion of the light-emitting layer EL that is separated from the second part SPEL of the light-emitting layer EL. The second part SPCE of the cathode electrode CE can also be placed on the third layer M3 of the metal layer MTL. As shown in Figure 34, the second part SPCE of the cathode electrode CE may not be in direct contact with the second part SPEL of the light-emitting layer EL.

[0382] The third portion TPCE of the cathode electrode CE can be positioned adjacent to the undercut region UCA. For example, the third portion TPCE of the cathode electrode CE can be placed on the third portion TPEL of the light-emitting layer EL. Although the third portion TPCE of the cathode electrode CE is separated from the second portion SPCE of the cathode electrode CE, the third portion TPCE of the cathode electrode CE and the second portion SPCE of the cathode electrode CE can overlap each other on a plane.

[0383] Figure 35 is an exemplary cross-sectional schematic diagram of the moisture-proof structure MPS shown in Figure 30. Hereinafter, in describing the embodiment shown in Figure 35, unless otherwise specifically described, reference can be made to the aforementioned embodiments identical to those in Figures 1 to 34.

[0384] Referring to Figure 35, the moisture-proof structure MPS may include multiple insulating films, undercut regions UCA, metal layers MTL, recesses CONC, and etch stop layers ESL. The multiple insulating films, undercut regions UCA, metal layers MTL, and recesses CONC shown in Figure 35 may have the same structure as those shown in Figure 34, and therefore will not be described again.

[0385] Referring to Figure 35, an etch stop layer (ESL) can be disposed between a plurality of insulating films beneath a metal layer (MTL). The ESL can be positioned within a recess (CONC). For example, the ESL can extend into the recess (CONC) and partially lie between a second gate insulating film (GI2) and a second interlayer insulating film (ILD2) located beneath the metal layer (MTL). The extended portion allows the portion of the ESL disposed within the CONC recess to have a relatively small thickness. In other words, during the etching process, the upper portion of the ESL on the recess (CONC) can be partially etched to form an etch stop residue film (ESRL). In this case, the ESRL can be a Mo / Ti bilayer Ti residue film or a Mo monolayer Mo residue film. An organic insulating film can be disposed on a portion of the ESRL disposed within the recess (CONC). For example, the ESRL can be exposed through the undercut region (UCA) of the organic insulating film, and a light-emitting layer (EL) can be disposed on the exposed ESRL.

[0386] Referring to Figure 35, the third portion TPEL of the luminescent layer EL can be positioned adjacent to the undercut region UCA. For example, the third portion TPEL of the luminescent layer EL can be located below the second portion SPEL of the luminescent layer EL. For example, the third portion TPEL of the luminescent layer EL can be disposed on the recess CONC. The third portion TPEL of the luminescent layer EL can be disposed on the etch stop residue film ESRL disposed in the recess CONC. The third portion TPEL of the luminescent layer EL can be spaced apart from the second portion SPEL of the luminescent layer EL, and the third portion TPEL of the luminescent layer EL and the second portion SPEL of the luminescent layer EL can overlap each other on a plane.

[0387] The third portion TPCE of the cathode electrode CE can be located adjacent to the undercut region UCA. For example, the third portion TPCE of the cathode electrode CE can be placed on the third portion TPEL of the light-emitting layer EL. Although the third portion TPCE of the cathode electrode CE is separated from the second portion SPCE of the cathode electrode CE, the third portion TPCE of the cathode electrode CE and the second portion SPCE of the cathode electrode CE can overlap each other on a plane.

[0388] Figure 36 is an example cross-sectional schematic diagram of the moisture-proof structure MPS shown in Figure 30. Hereinafter, in describing the embodiment shown in Figure 36, unless otherwise specifically described, it is the same as the aforementioned embodiments referring to Figures 1 to 35.

[0389] Referring to Figure 36, the moisture-proof structure MPS may include a plurality of insulating films, undercut regions UCA, metal layers MTL, recesses CONC, and etch-stopping layers ESL. The plurality of insulating films, undercut regions UCA, metal layers MTL, and recesses CONC shown in Figure 36 may have the same structure as those shown in Figure 36, and therefore will not be described in detail.

[0390] Referring to Figure 36, an etch stop layer (ESL) can be disposed between a plurality of insulating films located beneath a metal layer (MTL). For example, the ESL can be partially disposed between a first interlayer insulating film (ILD1) and a second buffer layer (BUF2) located beneath the metal layer (MTL). Unlike the ESL shown in Figures 34 or 35, the ESL can be disposed between the insulating films without being placed on the recess (CONC). For example, during the etching process, the ESL can be over-etched to partially etch and remove it. In other words, the ESL may not be disposed in the recess (CONC). An organic insulating film can be disposed on a portion of the first interlayer insulating film (ILD1) disposed in the recess (CONC). For example, the first interlayer insulating film (ILD1) can be exposed through the undercut region (UCA) of the organic insulating film, and the light-emitting layer (EL) can be placed on the exposed first interlayer insulating film (ILD1).

[0391] Referring to Figure 36, the third portion TPEL of the light-emitting layer EL can be positioned adjacent to the undercut region UCA. For example, the third portion TPEL of the light-emitting layer EL can be positioned below the second portion SPEL of the light-emitting layer EL. For example, the third portion TPEL of the light-emitting layer EL can be positioned on the recess CONC. The third portion TPEL of the light-emitting layer EL can be positioned on the second buffer layer BUF2 disposed in the recess CONC. The third portion TPEL of the light-emitting layer EL can be separated from the second portion SPEL of the light-emitting layer EL, and the third portion TPEL of the light-emitting layer EL and the second portion SPEL of the light-emitting layer EL can overlap each other on a plane.

[0392] The third portion TPCE of the cathode electrode CE can be located adjacent to the undercut region UCA. For example, the third portion TPCE of the cathode electrode CE can be placed on the third portion TPEL of the light-emitting layer EL. Although the third portion TPCE of the cathode electrode CE is separated from the second portion SPCE of the cathode electrode CE, the third portion TPCE of the cathode electrode CE and the second portion SPCE of the cathode electrode CE can overlap each other on a plane.

[0393] Because the display device includes a moisture-proof structure (MPS), the light-emitting layer (EL) can be disconnected two or more times through the MPS. Therefore, it can effectively prevent defects that may occur when external moisture seeps into the display area through the camera aperture.

[0394] The disclosed embodiments described above will now be briefly described.

[0395] This disclosed embodiment provides a display device comprising: a substrate including a display area, a camera aperture, and a first non-display area, wherein a plurality of light-emitting elements including a light-emitting area are disposed in the display area, the camera aperture is disposed in the display area, and the first non-display area is disposed between the display area and the camera aperture; a dam located in the first non-display area; a plurality of insulating films disposed on the substrate and disposed below the plurality of light-emitting elements; and a moisture-proof structure disposed in the first non-display area and including at least one of the plurality of insulating films in an undercut area.

[0396] In the display device according to the present disclosure embodiment, the light-emitting layer is further positioned to extend from the display area to the boundary of the camera hole, and the light-emitting layer can be disconnected in the undercut area.

[0397] In a display device according to an embodiment of the present disclosure, the display device may further include a disconnected portion located in a first non-display area.

[0398] In the display device according to the embodiments disclosed herein, the disconnection portion may include an internal disconnection portion located between the display area and the dam, and an external disconnection portion located between the dam and the camera hole.

[0399] In the display device according to the embodiments of this disclosure, the moisture-proof structure may include an internal moisture-proof structure placed between the display area and the embankment.

[0400] In the display device according to the embodiments of this disclosure, the moisture-proof structure may include an external moisture-proof structure placed between the dam and the camera hole.

[0401] In the display device according to an embodiment of this disclosure, the light-emitting layer may be positioned to extend from the display area to the boundary of the camera aperture. The moisture-proof structure may include a metal layer located on the undercut region. The light-emitting layer is interrupted on the side of the metal layer.

[0402] In the display device according to the embodiments of this disclosure, the metal layer may include a first layer, a second layer disposed on the first layer, and a third layer disposed on the second layer. The second layer may have a more recessed shape than the first and third layers.

[0403] In the display device according to the embodiments of this disclosure, the metal layer may include a first layer, a second layer disposed on the first layer, and a third layer disposed on the second layer. The first layer may have a more prominent shape than the third layer.

[0404] In the display device according to the embodiments of this disclosure, the metal layer may include a first layer, a second layer located on the first layer, and a third layer located on the second layer. The first layer and the third layer may be made of the same material, and the material of the second layer may be different from that of the first layer and the third layer.

[0405] In a display device according to an embodiment of the present disclosure, the moisture-proof structure may include a stepped portion located in the undercut region and below the metal layer in the display device according to an embodiment of the present disclosure.

[0406] In the display device according to the present disclosure embodiment, the undercut region can be placed on an inorganic insulating film disposed on a substrate and placed below a plurality of light-emitting elements.

[0407] In the display device according to the present disclosure embodiment, the undercut region can be placed on an organic insulating film disposed on a substrate and placed below a plurality of light-emitting elements.

[0408] In the display device according to an embodiment of this disclosure, the moisture-proof structure may include a recess of at least one of a plurality of insulating films. An undercut region may be located within the recess.

[0409] In the display device according to an embodiment of this disclosure, the moisture-proof structure includes a recess of at least one of a plurality of insulating films. An undercut region is disposed in the recess.

[0410] In the display device according to the embodiments of this disclosure, the moisture-proof structure may include a recess of at least one of a plurality of insulating films. The recess may be located on an inorganic insulating film disposed on a substrate and positioned below a plurality of light-emitting elements.

[0411] In the display device according to the present disclosure embodiment, the moisture-proof structure may include a metal layer disposed on the undercut region, and may also include an auxiliary metal layer disposed below the metal layer and spaced apart from the metal layer.

[0412] In the display device according to the embodiments of this disclosure, the display device may further include an auxiliary metal layer. The moisture-proof structure may include a recess of at least one of a plurality of insulating films. The auxiliary metal layer may be disposed below the plurality of recesses.

[0413] The display device according to some embodiments includes:

[0414] The display area and the non-display area adjacent to the display area;

[0415] The camera aperture is adjacent to the non-display area, and is separated from the display area in a planar schematic diagram;

[0416] The light-emitting element is configured to overlap with the display area on the planar schematic diagram;

[0417] The dam structure, in a planar view, is located between the camera aperture and the display area; and

[0418] A moisture-proof structure, adjacent to a dam structure, comprising multiple metal layers.

[0419] In some embodiments, the moisture-proof structure includes an undercut region adjacent to a plurality of metal layers.

[0420] In some embodiments, the display device further includes a plurality of insulating films located beneath a plurality of metal layers.

[0421] In some embodiments, the plurality of metal layers include a first metal layer and a second metal layer on the first metal layer.

[0422] In some embodiments, the plurality of insulating films include a first insulating film.

[0423] In some embodiments, the first metal layer extends in a first direction beyond a portion of the first insulating film to form an undercut region.

[0424] In some embodiments, the light-emitting element includes a light-emitting layer and a first electrode on the light-emitting layer.

[0425] In some embodiments, the light-emitting layer comprises a first portion, a second portion, and a third portion. Here, the first portion, the second portion, and the third portion are spaced apart from each other.

[0426] In some embodiments, in a planar view, a first portion of the light-emitting layer overlaps with the display area, and a second portion of the light-emitting layer is located on the first metal layer.

[0427] In some embodiments, a third portion of the light-emitting layer is disposed below the undercut region.

[0428] In some embodiments, in a planar view, the third portion of the light-emitting layer overlaps with the second portion of the light-emitting layer, and in a planar view, the first portion of the light-emitting layer does not overlap with the second and third portions of the light-emitting layer.

[0429] In some embodiments, the light-emitting element includes a light-emitting layer and a first electrode on the light-emitting layer. Here, the first electrode includes a first portion, a second portion, and a third portion.

[0430] In some embodiments, the first portion, the second portion, and the third portion of the first electrode are spaced apart from each other. Here, in a planar view, the first portion of the first electrode overlaps with the display area, and the second portion of the first electrode is located on the first metal layer.

[0431] In some embodiments, the light-emitting element includes a light-emitting layer and a first electrode located on the light-emitting layer.

[0432] In some embodiments, the first electrode includes a first portion, a second portion, and a third portion, and the first portion, the second portion, and the third portion of the first electrode are spaced apart from each other.

[0433] In some embodiments, in a planar view, a first portion of the first electrode overlaps with the display area, and a third portion of the first electrode is disposed below the undercut area.

[0434] In some embodiments, in a planar view, the third portion of the light-emitting layer overlaps with the second portion of the light-emitting layer, and in a planar view, the first portion of the light-emitting layer does not overlap with the second and third portions of the light-emitting layer.

[0435] In some embodiments, from a planar perspective, a moisture-proof structure is disposed between the dam structure and the camera aperture.

[0436] In some embodiments, from a planar perspective, the dam structure is positioned between the moisture-proof structure and the camera aperture.

[0437] In some embodiments, the moisture-proof structure includes a first moisture-proof structure and a second moisture-proof structure. In a planar view, the first moisture-proof structure is disposed between the dam structure and the camera aperture; in a planar view, the dam structure is disposed between the first moisture-proof structure and the second moisture-proof structure.

[0438] In the display device according to the embodiments of the present disclosure, the display device may further include an auxiliary metal layer disposed below a plurality of metal layers of the first moisture-proof structure.

[0439] In the display device according to the embodiments of the present disclosure, the display device may further include a second moisture-proof structure adjacent to the first moisture-proof structure and an auxiliary metal layer disposed between the second moisture-proof structure and the first moisture-proof structure.

[0440] In the display device according to the embodiments of the present disclosure, in a planar view, the auxiliary metal layer may overlap with the second moisture-proof structure and the first moisture-proof structure.

[0441] In the display device according to the embodiments of the present disclosure, from a planar view, the display device may further include a second moisture-proof structure adjacent to and spaced apart from the first moisture-proof structure, and a first auxiliary metal layer and a second auxiliary metal layer spaced apart from the first auxiliary metal layer. From a planar view, the first auxiliary metal layer may overlap with the first moisture-proof structure, and the second auxiliary metal layer may overlap with the second moisture-proof structure.

[0442] In the display device according to the embodiments of the present disclosure, the display device may further include at least one insulating layer between a plurality of metal layers and an auxiliary metal layer. In a planar view, the auxiliary metal layer may contact and overlap with at least one insulating layer.

[0443] In the display device according to the embodiments of this disclosure, the display device may further include a thin-film transistor electrically connected to the light-emitting element. The thin-film transistor may include a gate electrode. The auxiliary metal layer and the gate electrode of the thin-film transistor may be made of the same material.

[0444] In the display device according to the embodiments of this disclosure, the display device may further include a thin-film transistor electrically connected to a light-emitting element, and include an active layer and a metal pattern disposed below and spaced apart from the active layer. The auxiliary metal layer and the metal pattern may contain the same material.

[0445] The foregoing description is intended to enable those skilled in the art to make and use the technical concepts disclosed herein, and is provided in the context of specific applications and their requirements. Various modifications, additions, and substitutions to the described embodiments will be apparent to those skilled in the art, and the general principles defined in the specification can be applied to other embodiments and applications without departing from the concept and scope of protection of this disclosure. The foregoing description and drawings provide examples of the technical concepts disclosed herein for illustrative purposes only. That is, the disclosed embodiments are intended to illustrate the scope of the technical concepts disclosed herein.

[0446] The foregoing embodiments can be combined to provide further embodiments. All U.S. patents, U.S. patent disclosures, U.S. patent applications, foreign patents, foreign patent applications, and non-patent publications mentioned in and / or listed in the filing data sheet are incorporated herein by reference in their entirety. Where necessary, aspects of the embodiments may be modified to provide further embodiments incorporating the concepts found in various patents, applications, and publications.

[0447] These and other modifications can be made to the embodiments based on the foregoing detailed description. Generally, the terminology used in the following claims should not be construed as limiting the claims to the specific embodiments disclosed in the specification and claims, but should be construed as encompassing all possible embodiments and the full scope of equivalents accorded to these claims. Therefore, the claims are not limited to this disclosure.

[0448] 100: Display device 110: Display panel CH: Camera Hole DA: Display area DL: Data Line GL: Gate line DDC: Data Drive Circuit GDC: Gate drive circuit SP: Subpixel D-CTR: Display Controller T-CTR: Touch Controller Data: Digital image data ED: Light-emitting element SUB:Substrate T1: Driving transistor T2: Scanning transistor N1: First node N2: Second node N3: Third node DA: Display area VBA: Variable Border Area STA: Disconnect part of the region ISTA: Internal disconnection of some areas OSTA: External disconnected area NDA1: First Non-Display Area NDA2: Second Non-Display Area TSM: Touch Sensor Metal TSM: First Touch Sensor Metal TSM: Second Touch Sensor Metal TSM: Third Touch Sensor Metal H-SYS: Host System VDATA: Data Voltage Cst: Storage capacitor AE: Anode electrode EL: Light-emitting layer CE: Cathode electrode FPEL, FPCE: Part 1 SPEL, SPCE: Part Two TPEL, TPCE: Part Three FRPEL, FRPCE: Part Four TL1, TL2: Touch cables MPS: Moisture-proof structure FMPS: First moisture-proof structure SMPS: Second Moisture-Proof Structure STA: Disconnect part of the region ISTA: Internal disconnection of some areas OSTA: External disconnected area IPD: Interlayer membrane SUB:Substrate SUB1: First substrate MBUF: Multiple Buffer Layers ABUF: Active Buffer Layer SUB1: First substrate SUB2: Second substrate BUF1: First buffer layer BUF2: Second Buffer Layer ACT1: First Active Layer GI1: First gate insulating film GI2: Second gate insulating film GAT1: First gate electrode ESL: Etching Stop Layer ESRL: Etching Stop Residual Film SD1: First source-drain electrode SD2: Second source-drain electrode CAPE1: First capacitor electrode CAPE2: ​​Second capacitor electrode PLN1: First planarization layer PLN2: Second planarization layer ILD1: First interlayer insulation layer ILD2: Second interlayer insulating film TM: Metal Pattern MTL: Metal Layer AML: Auxiliary Metal Layer UCA: Undercut Region M1: First Floor M2: Second Floor M3: Third Floor BRG: Bridging Metal STP: Stepped section CONC: Concave ENCAP: Encapsulation layer PAS1: First encapsulation layer PCL: Second encapsulation layer PAS2: Third encapsulation layer SSX, SSY: Side view

Claims

1. A display device comprising: a substrate including a display area, a camera aperture, and a first non-display area, wherein a plurality of light-emitting elements including a light-emitting layer are disposed in the display area, the camera aperture is located in the display area, and the first non-display area is located between the display area and the camera aperture; a dam located in the first non-display area; a plurality of insulating films disposed on the substrate and located below the light-emitting elements; a moisture-proof structure disposed in the first non-display area, the moisture-proof structure including an undercut area of ​​at least one of the insulating films; and a break portion located in the first non-display area, wherein the break portion includes: an internal break portion located between the display area and the dam, and the internal break portion protruding from the insulating films; and an external break portion located between the dam and the camera aperture, and the external break portion protruding from the insulating films, wherein the moisture-proof structure includes a metal layer located on the undercut area.

2. The display device as claimed in claim 1, wherein the light-emitting layer is configured to extend from the display area to a boundary of the camera hole, and wherein the light-emitting layer is interrupted in the undercut region.

3. The display device as claimed in claim 1, wherein the moisture-proof structure includes an internal moisture-proof structure located between the display area and the embankment.

4. The display device as claimed in claim 1, wherein the moisture-proof structure includes an external moisture-proof structure located between the dam and the camera hole.

5. The display device as claimed in claim 1, wherein the light-emitting layer is configured to extend from the display area to one boundary of the camera hole, wherein the light-emitting layer is interrupted on one side of the metal layer.

6. The display device as claimed in claim 5, wherein the metal layer comprises a first layer, a second layer on the first layer, and a third layer on the second layer, wherein the second layer has a more concave shape than the first layer and the third layer, or the first layer has a more protruding shape than the third layer.

7. The display device as claimed in claim 5, wherein the metal layer comprises a first layer, a second layer located on the first layer, and a third layer located on the second layer, and wherein the first layer and the third layer are made of the same material, and the material of the second layer is different from the material of the first layer and the material of the third layer.

8. The display device as claimed in claim 5, wherein the moisture-proof structure includes a stepped portion located in the undercut region and below the metal layer.

9. The display device as claimed in claim 1, wherein the undercut region is located on an insulating film disposed on the substrate and below the light-emitting elements, and wherein the insulating film is an inorganic insulating film or an organic insulating film.

10. The display device as claimed in claim 1, wherein the moisture-proof structure includes a recess of at least one of the insulating films, and wherein the undercut region is located in the recess.

11. The display device as claimed in claim 1, wherein the moisture-proof structure includes a recess of at least one of the insulating films, and wherein the undercut region is located on an insulating film disposed on the substrate and located below the light-emitting elements, the insulating film being an inorganic insulating film or an organic insulating film.

12. The display device as claimed in claim 1 further includes an auxiliary metal layer, wherein the moisture-proof structure includes a recess of at least one of the insulating films, and wherein the auxiliary metal layer is disposed below the recess.

13. A display device comprising: a display area and a non-display area adjacent to the display area; a camera aperture adjacent to the non-display area, the camera aperture being spaced apart from the display area in a planar viewing angle; a light-emitting element configured to overlap the display area in a planar viewing angle; at least one insulating layer located below the light-emitting element; a dam structure located in the non-display area; a first moisture-proof structure adjacent to the dam structure, the first moisture-proof structure comprising a plurality of metal layers; and a break portion located in the non-display area, wherein the break portion comprises: an internal break portion located between the display area and the dam structure, and the internal break portion protruding from the at least one insulating layer; and an external break portion located between the dam structure and the camera aperture, and the external break portion protruding from the at least one insulating layer, wherein the first moisture-proof structure comprises an undercut region of at least one of a plurality of insulating films disposed on a substrate, the metal layers being disposed on the undercut region.

14. The display device as claimed in claim 13 further includes an auxiliary metal layer disposed below the metal layers of the first moisture-proof structure.

15. The display device as claimed in claim 13 further comprises: a second moisture-proof structure adjacent to the first moisture-proof structure; and an auxiliary metal layer disposed between the second moisture-proof structure and the first moisture-proof structure.

16. The display device as claimed in claim 15, wherein the auxiliary metal layer overlaps with the second moisture-proof structure and the first moisture-proof structure in a planar viewing angle.

17. The display device as claimed in claim 13 further comprises: a second moisture-proof structure, which is adjacent to and spaced apart from the first moisture-proof structure in a planar viewing angle; and a first auxiliary metal layer and a second auxiliary metal layer spaced apart from the first auxiliary metal layer, wherein in a planar viewing angle, the first auxiliary metal layer overlaps with the first moisture-proof structure and the second auxiliary metal layer overlaps with the second moisture-proof structure.

18. The display device as claimed in claim 14, wherein the at least one insulating layer is located between the metal layers and the auxiliary metal layer, and wherein the auxiliary metal layer contacts and overlaps the at least one insulating layer in a planar viewing angle.

19. The display device as claimed in claim 18 further includes a thin-film transistor electrically connected to the light-emitting element, the thin-film transistor including a gate electrode, wherein the auxiliary metal layer and the gate electrode of the thin-film transistor are made of the same material.

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