Semiconductor memory devices

Abstract

A semiconductor memory device according to one embodiment of the present invention includes a first substrate, a molding resin, and a memory chip. The first substrate has a first surface and a second surface located opposite to the first surface. The molding resin covers the first surface when viewed from the thickness direction of the first substrate. The memory chip is disposed between the first surface and the molding resin. The first substrate includes terminals disposed on the second surface and exposed to the outside. The terminals have: a first non-planar portion having at least one of a plurality of recesses and a plurality of protrusions, wherein the first recesses and first protrusions are alternately arranged.

Description

Technical Field

[0001] The present invention relates to a semiconductor memory device. Prior Technology

[0002] A semiconductor memory device is known, comprising a substrate, a memory chip mounted on a first side of the substrate, and a plurality of terminals disposed on a second side of the substrate (see, for example, U.S. Patent Application Publication No. 2022 / 0059493). Summary of the Invention

[0003] An embodiment of a semiconductor memory device includes a first substrate, a molding resin, and a memory chip. The first substrate has a first surface and a second surface located opposite the first surface. The molding resin covers the first surface when viewed from the thickness direction of the first substrate. The memory chip is disposed between the first surface and the molding resin. The first substrate includes terminals disposed on the second surface and exposed to the outside. The terminals have: a first non-planar portion having at least one of a plurality of recesses and a plurality of protrusions, wherein the first recesses and first protrusions are alternately arranged. Simple Explanation of the Diagram

[0004] Figures 1(a) to (c) show the semiconductor memory device of the first embodiment. Figure 2 is a cross-sectional view showing the semiconductor memory device of the first embodiment. Figure 3 is a cross-sectional view along line F3-F3 of the semiconductor memory device shown in Figure 1. Figure 4 is a perspective view showing the terminals of the semiconductor memory device of the first embodiment. Figure 5A shows the terminals of the semiconductor memory device in the first embodiment. Figure 5B shows the terminals of the semiconductor memory device in the first embodiment. Figure 5C shows the terminals of the semiconductor memory device in the first embodiment. Figure 6 is a top view of the substrate of the host machine in the first embodiment. Figure 7 is a perspective view showing the first state when the semiconductor memory device of the first embodiment is installed. Figure 8 is a perspective view showing the second state when the semiconductor memory device of the first embodiment is installed. Figure 9 is a perspective view showing the third state when the semiconductor memory device of the first embodiment is installed. Figures 10(a) to (e) are cross-sectional views showing a method for manufacturing a semiconductor memory device according to the first embodiment. Figures 11(f) to (j) are cross-sectional views showing the manufacturing method of the semiconductor memory device according to the first embodiment. Figures 12(k) to (l) are cross-sectional views showing a method for manufacturing a semiconductor memory device according to the first embodiment. Figure 13A is a diagram showing the terminals of a semiconductor memory device in the first variation of the first embodiment. Figure 13B is a diagram showing the terminals of a semiconductor memory device in the first variation of the first embodiment. Figure 14A is a diagram showing the terminals of a semiconductor memory device in a second variation of the first embodiment. Figure 14B shows the terminals of a semiconductor memory device in a second variation of the first embodiment. Figure 15A is a diagram showing the terminals of a semiconductor memory device in a second variation of the first embodiment. Figure 15B is a diagram showing the terminals of a semiconductor memory device in a second variation of the first embodiment. Figure 16A shows the terminals of the semiconductor memory device in the third variation of the first embodiment. Figure 16B is a diagram showing the terminals of a semiconductor memory device in the third variation of the first embodiment. Figure 17 is a perspective view showing the terminals of the semiconductor memory device in the second embodiment. Figure 18A shows the terminals of the semiconductor memory device in the second embodiment. Figure 18B shows the terminals of the semiconductor memory device in the second embodiment. Figure 18C shows the terminals of the semiconductor memory device in the second embodiment. Figure 19A is a diagram showing the terminals of the semiconductor memory device in the first variation of the second embodiment. Figure 19B is a diagram showing the terminals of the semiconductor memory device in the first variation of the second embodiment. Figure 20A shows the terminals of the semiconductor memory device in the second variation of the second embodiment. Figure 20B is a diagram showing the terminals of a semiconductor memory device in the second variation of the second embodiment. Figure 21A is a diagram showing the terminals of a semiconductor memory device in a second variation of the second embodiment. Figure 21B is a diagram showing the terminals of a semiconductor memory device in a second variation of the second embodiment. Figure 22A is a diagram showing the terminals of a semiconductor memory device in the third variation of the second embodiment. Figure 22B is a diagram showing the terminals of a semiconductor memory device in the third variation of the second embodiment. Figure 23A shows the terminals of the semiconductor memory device in the fourth variation of the second embodiment. Figure 23B shows the terminals of the semiconductor memory device in the fourth variation of the second embodiment. Figure 24 is a diagram showing the terminals of the semiconductor memory device in the fifth variation of the second embodiment. Figure 25 is a diagram showing the terminals of the semiconductor memory device in the sixth variation of the second embodiment. Figure 26 is a diagram showing the terminals of the semiconductor memory device in the seventh variation of the second embodiment. Figure 27A shows the terminals of the semiconductor memory device in the eighth variation of the second embodiment. Figure 27B shows the terminals of the semiconductor memory device in the eighth variation of the second embodiment. Figure 28A shows the terminals of the semiconductor memory device in the 9th variation of the second embodiment. Figure 28B shows the terminals of the semiconductor memory device in the 9th variation of the second embodiment. Figure 29A shows the terminals of the semiconductor memory device in the 10th variation of the second embodiment. Figure 29B is a diagram showing the terminals of the semiconductor memory device in the 10th variation of the second embodiment. Figures 30(a) to (c) show the semiconductor memory device of the third embodiment. Figure 31A shows a semiconductor memory device according to a third embodiment. Figure 31B shows a semiconductor memory device according to the third embodiment. Figure 32A shows a semiconductor memory device in the fourth embodiment. Figure 32B shows a semiconductor memory device in the fourth embodiment. Figure 33A is a diagram showing examples of semiconductor memory devices with variations from the first to the fourth embodiment. Figure 33B is a diagram showing examples of semiconductor memory devices with variations from the first to the fourth embodiment. Implementation

[0005] Hereinafter, with reference to the drawings, an embodiment of a semiconductor memory device will be described. In the following description, components having the same or similar functions will be given the same symbol. Furthermore, there are instances where repeated descriptions of these components are omitted. In the following description, when the reference symbols for numbers or letters appended at the end are not mutually distinguishable, the final numbers or letters may be omitted.

[0006] In this application, the terms are defined as follows: "parallel," "orthogonal," or "identical" may each include "substantially parallel," "substantially orthogonal," or "substantially identical." "Connection" is not limited to mechanical connections and may include electrical connections. That is, "connection" is not limited to the direct connection of two elements, but may also include the connection where other elements are placed between two elements. Furthermore, "connection" is not limited to a joining, but may also include a mere contact.

[0007] The X, Y, and Z directions are defined as follows. The X and Y directions are along the first surface 11a of the substrate 11 (see Figure 2). The X direction is the direction from region A1 to region A2 (see Figure 1). The Y direction is a direction that intersects (e.g., is orthogonal) the X direction. The Z direction is a direction that intersects (e.g., is orthogonal) both the X and Y directions. The Z direction is, for example, the thickness direction of the substrate 11. The X direction is an example of a "first direction." The Y direction is an example of a "second direction."

[0008] Furthermore, in the figures described below, the portion with the text "bb section" displays a section along the bb line shown in figure (a), and the portion with the text "cc section" displays a section along the cc line shown in figure (a).

[0009] (First Implementation) <1. External Structure of Semiconductor Memory Devices> Figure 1 is a diagram showing the semiconductor memory device 10 of the first embodiment. Figure 1(a) shows one side surface of the semiconductor memory device 10. Figure 1(b) shows one side surface of the semiconductor memory device 10. Figure 1(c) shows the other side surface of the semiconductor memory device 10.

[0010] The semiconductor memory device 10 is, for example, a semiconductor memory device like an SSD (Solid State Drive). The semiconductor memory device 10 has, for example, a SiP (System in Package) structure. The semiconductor memory device 10 is installed in a host machine. The semiconductor memory device 10 is used as a memory device in the host machine. The host machine can be a personal computer, mobile device, video recorder, or automotive device, but is not limited to these examples. Hereinafter, an example of the semiconductor memory device 10 being installed in a host machine HS (see Figure 6) will be described.

[0011] The semiconductor memory device 10 is, for example, a card-type semiconductor memory device like a memory card. For example, the semiconductor memory device 10 has a length L in the X direction, a width W in the Y direction, and a thickness T in the Z direction. The length L is greater than the width W. An example of the length L is 18 mm ± 0.10 mm. An example of the width W is 14 mm ± 0.10 mm. An example of the thickness T is 1.4 mm ± 0.10 mm. However, the above specifications and values ​​do not limit the scope of this embodiment.

[0012] As shown in Figure 1, the semiconductor memory device 10 has a first main surface 10sa, a second main surface 10sb, a first end surface 10sc, a second end surface 10sd, a first side surface 10se, and a second side surface 10sf.

[0013] The first main surface 10sa and the second main surface 10sb are the widest of the six surfaces mentioned above. The second main surface 10sb is located on the opposite side of the first main surface 10sa. The first main surface 10sa and the second main surface 10sb are separated in the Z direction. The first main surface 10sa and the second main surface 10sb extend in the X and Y directions. A plurality of terminals 41, described later, are provided on the second main surface 10sb. The plurality of terminals 41 are exposed on the outside of the second main surface 10sb.

[0014] The first end face 10sc and the second end face 10sd are separated in the X direction. The first end face 10sc and the second end face 10sd extend in the Y and Z directions, respectively. The first end face 10sc connects one end of the first main face 10sa in the X direction to one end of the second main face 10sb in the X direction. The second end face 10sd connects the other end of the first main face 10sa in the X direction to the other end of the second main face 10sb in the X direction.

[0015] The first side face 10se and the second side face 10sf are separated in the Y direction. The first side face 10se and the second side face 10sf extend in the X and Z directions. The first side face 10se connects one end of the first main surface 10sa in the Y direction to one end of the second main surface 10sb in the Y direction. The second side face 10sf connects the other end of the first main surface 10sa in the Y direction to the other end of the second main surface 10sb in the Y direction.

[0016] In this embodiment, the semiconductor memory device 10 includes regions A1 to A3. Region A1 is disposed between the center C1 in the X direction of the semiconductor memory device 10 and the first end face 10sc. In region A1, a plurality of terminals 41A are disposed as terminals 41. The plurality of terminals 41A are arranged in a row in the Y direction. Region A2 is disposed between the center C1 in the X direction of the semiconductor memory device 10 and region A1. In region A2, a plurality of terminals 41B are disposed as terminals 41. The plurality of terminals 41B are arranged in a row in the Y direction. Region A3 is disposed between the center C1 in the X direction of the semiconductor memory device 10 and the second end face 10sd. In region A3, a plurality of terminals 41C are disposed as terminals 41. The plurality of terminals 41C are arranged in a row in the Y direction.

[0017] <2. Internal Structure of Semiconductor Memory Devices> Next, the internal structure of the semiconductor memory device 10 will be explained. Figure 2 is a cross-sectional view of a semiconductor memory device 10. The semiconductor memory device 10 includes, for example, a substrate 11, one or more (e.g., a plurality of) memory chips 12, a controller 13, one or more (e.g., a plurality of) electronic components 14, and molding resin 15.

[0018] <2.1 Baseboard> Substrate 11 is a printed circuit board. Substrate 11 is a plate extending in the X and Y directions. Substrate 11 is an example of a "first substrate". Substrate 11 has a first surface 11a and a second surface 11b. The first surface 11a and the second surface 11b are spaced apart in the Z direction. The first surface 11a and the second surface 11b extend in the X and Y directions. When viewed from the Z direction, the first surface 11a is the surface covered by molding resin 15. The second surface 11b is the surface located on the opposite side of the first surface 11a. The second surface 11b is exposed to the outside of the semiconductor memory device 10. The second surface 11b forms the second main surface 10sb of the semiconductor memory device 10.

[0019] <2.2 Memory Chip> The memory chip 12 is a non-volatile semiconductor memory chip that stores data. The memory chip 12 is, for example, a NAND flash memory. However, "semiconductor memory" is not limited to NAND flash memory; it can also be other types of memory such as NOR memory, MRAM (Magnetoresistive Random Access Memory), or resistive variable memory. The memory chip 12 generates heat when the semiconductor memory device 10 is used.

[0020] Memory chips 12 are disposed between the first surface 11a of substrate 11 and molding resin 15. A plurality of memory chips 12 may be stacked on the first surface 11a of substrate 11, for example. Alternatively, memory chips 12 may be stacked on the opposite side of substrate 11 above controller 13 instead of being mounted on the first surface 11a of substrate 11. A plurality of memory chips 12 may be electrically connected to the first surface 11a of substrate 11, for example, via bonding wires BW.

[0021] <2.3 Controller> The controller 13 is a control component mounted on the substrate 11. The controller 13 controls the entire semiconductor memory device 10. The controller 13 controls write operations or read operations on a plurality of memory chips 12. The controller 13 is, for example, a controller chip that integrates control functions onto a single semiconductor chip. The controller 13 is a semiconductor package. Such a semiconductor package may include, for example, a SoC (System on a Chip) that integrates host interface circuitry for communication with a host machine, control circuitry for controlling a plurality of memory chips 12, and control circuitry for controlling DRAM (Dynamic Random Access Memory) (not shown) onto a single semiconductor chip. The controller 13 is disposed between the first surface 11a of the substrate 11 and the molding resin 15. The controller 13 is, for example, mounted on the first surface 11a of the substrate 11. The controller 13 generates heat when the semiconductor memory device 10 is used.

[0022] <2.4 Electronic Components> Electronic component 14 is mounted on the first surface 11a of substrate 11. Electronic component 14 is a capacitor or resistor, etc.

[0023] <2.5 Molding Resin> The molding resin 15 is a sealing member disposed on the first surface 11a of the substrate 11. The molding resin 15 is formed of an insulating material. The molding resin 15, for example, seals a plurality of memory chips 12, a controller 13, and a plurality of electronic components 14 in one piece.

[0024] The molding resin 15 includes a first surface 15a and a second surface 15b. The first surface 15a is in contact with the first surface 11a of the substrate 11. The second surface 15b is located on the opposite side of the first surface 15a. The second surface 15b extends along the X and Y directions. The second surface 15b forms the first main surface 10sa of the semiconductor memory device 10.

[0025] <3. Substrate Structure> Next, the structure of the substrate 11 will be described. As shown in Figure 2, the substrate 11 is, for example, a multilayer circuit substrate. The substrate 11 includes an insulating substrate 21 and a wiring pattern 22.

[0026] The insulating substrate 21 is an insulating substrate forming the base of the substrate 11. The insulating substrate 21 is formed, for example, from a rigid insulating material such as epoxy glass. However, the material of the insulating substrate 21 is not limited to the above example. The insulating substrate 21 may also be formed from paper-phenolic materials, composite materials, fluorine-based materials, or polyimide materials.

[0027] In this embodiment, the insulating substrate 21 includes a core material 21A and a prepreg 21B laminated on the core material 21A. The prepreg 21B is located on the second surface 11b side relative to the core material 21A. Furthermore, the substrate 11 is not limited to a multilayer circuit board and can also be a double-sided substrate. That is, the insulating substrate 21 may also not have the prepreg 21B and may be formed only by the core material 21A. Therefore, in the following description, "insulating substrate 21" can be replaced with "core material 21A," and "surface 21s of insulating substrate 21" can be replaced with "surface 21s of core material 21A."

[0028] Wiring pattern 22 is disposed on the conductive portion of substrate 11. Wiring pattern 22 includes at least one wiring 22L disposed inside insulating substrate 21 and on the surface of substrate 11. Wiring pattern 22 is formed, for example, from a metallic material such as copper.

[0029] <4. Structure of the surface layer of the substrate> Next, the surface layer 30 of the substrate 11 will be described. Figure 3 is a cross-sectional view along line F3-F3 of the semiconductor memory device 10 shown in Figure 1. Also, for ease of explanation, the shape of the terminal 41 (the number of recesses 61 and protrusions 62 described later) is schematically shown in Figure 3. As shown in Figure 3, the substrate 11 has a surface layer 30. The surface layer 30 is a portion of the second surface 11b of the substrate 11 formed by depositing it on the insulating substrate 21. The surface layer 30 includes a conductive pattern 31 and a solder resist layer 32.

[0030] The conductive pattern 31 is included in the conductive portion of the surface layer 30 as part of the wiring pattern 22. The conductive pattern 31 has a plurality of terminals 41 (only one is shown in FIG. 3) and a plurality of wirings 42.

[0031] (terminal) A plurality of terminals 41 are exposed on the exterior of the semiconductor memory device 10 for electrical connection with the host machine HS. Each terminal 41 is, for example, a solder pad that connects to the contact pin 92 (see Figure 6) of the host machine HS. The plurality of terminals 41 are, for example, disposed on the surface 21s of the insulating substrate 21. Each terminal 41 is exposed on the exterior of the semiconductor memory device 10 through an opening 32h in the solder resist layer 32. Each of the plurality of terminals 41 is, for example, a signal terminal, a power terminal, or a ground terminal. Alternatively, a portion of the plurality of terminals 41 may also be a test terminal.

[0032] Each terminal 41 includes a body portion 45 and a protective film 46. The body portion 45 is formed, for example, of a metallic material such as copper (a first metallic material). The protective film 46 is deposited from the opposite side of the insulating substrate 21 to the body portion 45. The protective film 46 is, for example, a plating layer provided for rust prevention. The protective film 46 is, for example, formed of a metallic material such as gold or nickel.

[0033] In this embodiment, the protective film 46 includes, for example, a first metal film 46a and a second metal film 46b. The first metal film 46a is deposited on the body portion 45. The first metal film 46a is formed, for example, of a metal material such as nickel (the second metal material). Compared to the third metal material described later, the second metal material is a metal material with excellent adhesion to the first metal material (e.g., copper). The second metal material is, for example, nickel, titanium, tantalum, titanium nitride, tungsten, or tungsten nitride.

[0034] The second metal film 46b is deposited from the opposite side of the body portion 45 to the first metal film 46a. The second metal film 46b is exposed on the outside of the semiconductor memory device 10. The second metal film 46b is formed of a gold-like metallic material (the third metallic material).

[0035] (Wiring) The plurality of wirings 42 are included in the surface layer 30 as part of the wiring 22L. The plurality of wirings 42 are disposed on the surface 21s of the insulating substrate 21. At least a portion of the plurality of wirings 42 are electrically connected to the terminal 41.

[0036] <4.2 Solder resist layer> The solder resist layer 32 is an insulating protective layer that protects the conductive pattern 31. The solder resist layer 32 is an example of an "insulating layer." The solder resist layer 32 is, for example, disposed on the surface 21s of an insulating substrate. The solder resist layer 32 has an opening 32h that exposes the terminal 41. The solder resist layer 32 covers a portion of the conductive pattern 31. For example, the solder resist layer 32 covers a plurality of wirings 42.

[0037] <5. Terminal Shape> Next, the shape of the terminal 41 of the semiconductor memory device 10 will be described. Figure 4 is a perspective view showing the terminal 41 of the semiconductor memory device 10. In this embodiment, the terminal 41 has a non-planar portion 50. The non-planar portion 50 is an example of a "first non-planar portion".

[0038] In this embodiment, the non-planar portion 50 has a plurality of recesses 51. In the example shown in FIG4, the plurality of recesses 51 are arranged in a matrix of 10 rows in the X direction and 7 rows in the Y direction. The recesses 51 are bottomed holes provided on the surface of the terminal 41. In this embodiment, by providing a plurality of recesses 51, the non-planar portion 50 has a concave-convex structure with alternating recesses 61 and protrusions 62. For example, the recesses 61 and protrusions 62 are alternately arranged in the X direction and the Y direction respectively. The recess 61 is an example of a "first recess". The protrusion 62 is an example of a "first protrusion". In addition, in this application, "alternating arrangement of recesses and protrusions" means that there are three or more recesses and protrusions in total. For example, a concave-convex structure consisting of two recesses and one protrusion defined between the two recesses, or a concave-convex structure consisting of two protrusions and one recess defined between the two protrusions, both conform to an example of the "structure with alternating recesses and protrusions" mentioned in this application. Furthermore, the non-planar portion 50 does not need to be provided over the entire area of ​​the terminal 41, or it may only be provided in a portion of the terminal 41.

[0039] <5.1 Shape of concave portion> Figures 5A-5C show the terminals 41 of the semiconductor memory device 10. Recesses 61 are formed by recesses 51. In other words, "recesses 61" can be replaced by "recesses 51". A plurality of recesses 61 are arranged at equal intervals P1 in the X direction. The width of the recesses 61 in the X direction is, for example, the same as or greater than the interval P1. Also, a plurality of recesses 61 are arranged at equal intervals P2 in the Y direction. The width of the recesses 61 in the Y direction is, for example, the same as or greater than the interval P2. When viewed from the Z direction, the recesses 61 are polygonal. In this embodiment, the recesses 61 are quadrilaterals when viewed from the Z direction. However, the recesses 61 can be triangular or pentagonal polygons or larger, linear, or circular. The depth of the recesses 61 is, for example, 1 μm or more. In this embodiment, the depth of the recesses 61 is several μm to tens of μm. The width of the recess 61 in the X and Y directions is, for example, 1 μm or more. In this embodiment, the width of the recess 61 in the X and Y directions is several μm to several hundred μm.

[0040] <5.2 Shape of the convex part> The protrusion 62 is defined between two adjacent recesses 61 by providing a plurality of recesses 61. In this application, "protrusion" means a portion that protrudes away from the insulating substrate 21 compared to the bottom of the recess. In this embodiment, the protrusion 62 is defined between two adjacent recesses 61 in the X or Y direction.

[0041] In this embodiment, the protrusion 62 extends in a direction parallel to the second surface 11b of the substrate 11. For example, the protrusion 62 extends linearly along either the X or Y direction. For example, the plurality of protrusions 62 includes nine protrusions 62 spaced apart in the X direction and extending in the Y direction, and six protrusions 62 spaced apart in the Y direction and extending in the X direction. Each of the nine protrusions 62 extends to more than half the width of the terminal 41 in the Y direction. Each of the six protrusions 62 extends to more than half the width of the terminal 41 in the X direction. At each intersection of the nine protrusions 62 and the six protrusions 62, a connecting portion is formed, which cross-shapedly connects the protrusions 62 extending in the X direction and the protrusions 62 extending in the Y direction.

[0042] In this embodiment, the contact pin 92 of the connector 90 of the host machine HS (described later) has an extension 92a and a bend 92b. The extension 92a extends linearly, gradually approaching the terminal 41. The extension 92a extends in the X direction. The bend 92b is provided at the end of the contact pin 92. The bend 92b bends toward the opposite side of the terminal 41. The bend 92b is the contact portion of the contact pin 92. In this embodiment, the protrusion 62 of the terminal 41 contacts the bend 92b of the contact pin 92. That is, the contact portion CP of the terminal 41 and the contact pin 92 is formed between the protrusion 62 and the bend 92b of the contact pin 92. Thereby, the terminal 41 is electrically connected to the host machine HS.

[0043] <6. Thermally Conductive Sheets> Next, returning to Figure 1, the thermally conductive sheet 70 will be described. The thermally conductive sheet 70 is, for example, a sheet having thermal conductivity higher than that of the solder resist layer 32. The thermally conductive sheet 70 has, for example, a thermal conductivity of 1.0 W / (m·K) or higher. The thermally conductive sheet 70 is, for example, formed of silicone. When viewed from the Z direction, the thermally conductive sheet 70 overlaps with a flat region in the semiconductor memory device 10 located between regions A2 and A3. The thermally conductive sheet 70 is in contact with the second main surface 10sb of the semiconductor memory device 10. Alternatively, the thermally conductive sheet 70 may not need to be fixed to the semiconductor memory device 10, or it may only need to be in contact with the semiconductor memory device 10.

[0044] <7. Connectors of the host machine> Next, the connector 90 of the host machine HS will be described. Figure 6 is a top view of the substrate 80 of the host machine HS. For ease of explanation, the substrate 80 of the host machine HS will be referred to as "host substrate 80". The host substrate 80 is an example of a "second substrate". The host substrate 80 has a receptacle-type connector 90 (e.g., a clamshell receptacle type). The semiconductor memory device 10 can be easily installed and removed manually onto the connector 90. For example, the semiconductor memory device 10 can be easily removed from the connector 90 in case of failure and replaced. The connector 90, for example, has a connector body 91, a plurality of contact pins 92, and a retainer 93 (see Figure 7).

[0045] (Connector body) The connector body 91 is the main part that forms the outer shape of the connector 90. The connector body 91 is fixed to the host substrate 80. The connector body 91 is electrically connected to the host substrate 80. The connector body 91 includes a receiving portion S for accommodating the semiconductor memory device 10. For example, one side of the connector body 91 in the X direction is open. The connector body 91 includes wall portions 91a surrounding the receiving portion S from three directions.

[0046] (Contact pin) A plurality of contact pins 92 are provided on the terminals of the connector 90 for connection to a plurality of terminals 41 of the semiconductor memory device 10. The plurality of contact pins 92 are disposed in the receiving portion S. The plurality of contact pins 92 protrude from the exterior of the connector body 91. The plurality of contact pins 92 are positioned in a one-to-one correspondence with the plurality of terminals 41 of the semiconductor memory device 10. Each of the plurality of contact pins 92 extends in the X direction. Each of the plurality of contact pins 92 is a pin-type terminal with an elongated shape in the X direction.

[0047] The base ends of each of the plurality of contact pins 92 are connected to the connector body 91. The base ends are supported by the connector body 91. Each of the plurality of contact pins 92 is electrically connected to the host substrate 80 via the connector body 91. The ends of each of the plurality of contact pins 92 (the aforementioned bent portions 92b) are located at a height above the host substrate 80 (see Figure 7). Each of the plurality of contact pins 92 is arranged at an angle relative to the surface of the host substrate 80 such that the ends of each of the plurality of contact pins 92 are further away from the host substrate 80 than the aforementioned base ends. Each of the plurality of contact pins 92 is made of metal and is elastically deformable. In this embodiment, when the semiconductor memory device 10 is mounted on the connector 90, the ends of each of the plurality of contact pins 92 are pressed towards the host substrate 80 by the semiconductor memory device 10. Thereby, each of the plurality of contact pins 92 elastically deforms. As a result, through the restoring force of elastic deformation, the ends of each of the plurality of contact pins 92 are closely connected to the terminals 41 of the semiconductor memory device 10.

[0048] Figure 7 is a perspective view showing the first state when the semiconductor memory device 10 is installed. The retainer 93 is the part that holds the semiconductor memory device 10 when it is installed on the connector 90. The retainer 93 is rotatably connected to the connector body 91. The retainer 93 has, for example, a base end 93a, a first support portion 93b1, and a second support portion 93b2.

[0049] The base end 93a has a hinge structure and is rotatably connected to the end of the connector body 91. The first support portion 93b1 and the second support portion 93b2 are spaced apart in the Y direction and extend in a direction away from the base end 93a.

[0050] The first support portion 93b1 has a first part 94a1 (see Figure 8), a second part 94b1, and a third part 94c1. The first part 94a1 is along the first main surface 10sa of the semiconductor memory device 10. The second part 94b1 is along the first side surface 10se of the semiconductor memory device 10. The third part 94c1 is engaged with the second main surface 10sb of the semiconductor memory device 10. Similarly, the second support portion 93b2 has a first portion 94a2 (see Figure 8), a second portion 94b2, and a third portion 94c2. The first portion 94a2 runs along the first main surface 10sa of the semiconductor memory device 10. The second portion 94b2 runs along the second side surface 10sf of the semiconductor memory device 10. The third portion 94c2 engages the second main surface 10sb of the semiconductor memory device 10. The semiconductor memory device 10 is mounted on the retainer 93 by being inserted between the first support portion 93b1 and the second support portion 93b2.

[0051] Figure 8 is a perspective view showing the second state when the semiconductor memory device 10 is installed. The second state shows the state in which the retainer 93 rotates toward the host substrate 80 from the first state described above. Figure 9 is a perspective view showing the third state when the semiconductor memory device 10 is installed. The third state is the state in which the retainer 93 rotates further toward the host substrate 80 from the second state described above, and the semiconductor memory device 10 is housed in the receiving portion S of the connector body 91 (see Figure 8).

[0052] In this way, after the semiconductor memory device 10 is installed in the holder 93, the holder 93 is rotated toward the host substrate 80, and the semiconductor memory device 10 is freely installed in the connector 90 with the terminal 41 of the semiconductor memory device 10 in contact with the contact pin 92 of the connector 90.

[0053] <8. Manufacturing Method> Next, the manufacturing method of the semiconductor memory device 10 will be explained. Figures 10 to 12 are cross-sectional views showing a method for manufacturing the semiconductor memory device 10. Additionally, Figures 10 to 12 schematically show the shape of the terminal 41 (the number of recesses 61 and protrusions 62).

[0054] First, as shown in FIG10(a), a surface layer 30A is formed on an insulating substrate 21. The surface layer 30A includes a conductive pattern 31A and a solder resist layer 32A. The conductive pattern 31A is disposed on the insulating substrate 21. The solder resist layer 32A covers the entire conductive pattern 31A. The conductive pattern 31A includes a body portion 45 of a terminal 41 and a plurality of wirings 42.

[0055] Next, as shown in FIG10(b), a mask M1 is formed on the solder resist layer 32A. When viewed from the Z direction, the mask M1 has an opening M1h and a cover M1a. The opening M1h is positioned to correspond to the opening 32h of the solder resist layer 32 formed in the subsequent process. The cover M1a is positioned to correspond to the plurality of recesses 51 formed in the subsequent process. Next, as shown in FIG10(c), a portion of the solder resist layer 32A is removed by etching using the mask M1. Thereby, a solder resist layer 32 with an opening 32h is formed. Furthermore, the cover 32Aa is formed at positions corresponding to the plurality of recesses 51 formed in the subsequent process. As a result, the portion of the body portion 45 of the terminal 41 not covered by the cover 32Aa is exposed to the outside through the opening 32h.

[0056] Next, as shown in FIG10(d), a mask M2 is formed on the solder resist layer 32, for example, by dry film lamination. The mask M2 is provided over the entire area of ​​the solder resist layer 32, except for the opening 32h. The mask M2 has an opening M2h at a position corresponding to the opening 32h of the solder resist layer 32. Next, as shown in FIG10(e), a plating process is performed through the opening M2h of the mask M2. Thereby, a first plating layer 101 is formed on the portion of the body portion 45 of the terminal 41 not covered by the cover portion 32Aa. The first plating layer 101 is formed, for example, from the second metal material described above.

[0057] Next, as shown in FIG11(f), mask M2 is removed. Next, as shown in FIG11(g), mask M3 is formed on solder resist layer 32. When viewed from the Z direction, mask M3 has an opening M3h at a position corresponding to the opening 32h of solder resist layer 32. Next, as shown in FIG11(h), the cover portion 32Aa is removed by etching using mask M3.

[0058] Next, as shown in FIG11(i), a mask M4 is formed on the solder resist layer 32, for example, by dry film lamination. The mask M4 is provided over the entire area of ​​the solder resist layer 32, except for the opening 32h. The mask M4 has an opening M4h at a position corresponding to the opening 32h of the solder resist layer 32. Next, as shown in FIG11(j), a plating process is performed through the opening M4h of the mask M4. Thereby, a second plating layer 102 is formed over the entire area of ​​the terminal 41. The second plating layer 102 is formed, for example, from the aforementioned second metal material. The material of the second plating layer 102 is, for example, the same as the material of the first plating layer 101. In this case, no visible boundary is maintained between the first plating layer 101 and the second plating layer 102. In this embodiment, a first metal film 46a forming a protective film 46 is formed by the first plating layer 101 and the second plating layer 102.

[0059] Next, as shown in FIG12(k), a plating process using a third metal material is performed through the opening M4h of the mask M4. This forms a third plating layer 103 over the entire terminal 41. The third plating layer 103 forms a second metal film 46b of the protective film 46. This forms the terminal 41. In this embodiment, the portion of the opening 32h of the solder resist layer 32 where the first plating layer 101 is not provided is formed as a recess 61 (recess 51). Next, as shown in FIG12(l), the fourth mask M4 is removed. This completes a series of processes related to the manufacture of the semiconductor memory device 10.

[0060] <9. Advantages> In this embodiment, the terminal 41 of the semiconductor memory device 10 has a non-planar portion 50, which has a plurality of recesses 51, and the recesses 61 and protrusions 62 are arranged alternately. This configuration increases the surface area (heat dissipation area) of the terminal 41. Therefore, the heat dissipation performance of the semiconductor memory device 10 can be improved.

[0061] In this embodiment, the semiconductor memory device 10 can be freely mounted on the connector 90 with the contact pins 92 connected to the terminals 41. With this configuration, the heat dissipation of the semiconductor memory device 10 can be improved by utilizing the terminals 41 connected to the contact pins 92.

[0062] (Example of the first variation of the first implementation) Next, a first variation of the first embodiment will be described. The difference between the first variation and the first embodiment is that a planar portion 111 is provided in the area of ​​the terminal 41 that overlaps with the bent portion 92b of the contact pin 92. Otherwise, the configuration is the same as that of the first embodiment, except as described below.

[0063] Figures 13A and 13B are diagrams showing the terminal 41 of the first variation of the first embodiment. In this variation, the terminal 41 has a first region R1 and a second region R2.

[0064] The first region R1 is the area that, when viewed from the Z direction, at least a portion overlaps with the curved portion 92b of the contact pin 92. The width of the first region R1 in the Y direction is greater than the width of the curved portion 92b of the contact pin 92 in the Y direction.

[0065] The second region R2 is the region of terminal 41 that is offset from the first region R1. For example, when viewed from the Z direction, the second region R2 is the region that does not overlap with the bend 92b of the contact pin 92 compared to the first region R1. The second region R2 is located between the first region R1 and the ends of terminal 41 in the X and Y directions. The second region R2 is, for example, a frame-shaped region surrounding the first region R1.

[0066] In this variation, the second region R2 has the aforementioned non-planar portion 50. That is, the second region R2 has a concave-convex structure with alternating recesses 61 and convex portions 62 by providing a plurality of recesses 51.

[0067] On the other hand, the first region R1 does not have a non-planar portion 50. The first region R1 has a planar portion 111 that is flatter than the non-planar portion 50. The planar portion 111 has relatively flat surfaces along the X and Y directions. In this embodiment, the planar portion 111 is provided, for example, throughout the first region R1. The width of the planar portion 111 in the Y direction is greater than the width of the protrusion 62 in the Y direction. The width of the planar portion 111 in the Y direction is greater than the width of the bent portion 92b of the contact pin 92 in the Y direction. The width of the contact portion CP of the terminal 41 and the contact pin 92 in the Y direction is the same as the width of the bent portion 92b of the contact pin 92 in the Y direction.

[0068] According to this configuration, compared to the first embodiment, the contact portion CP between terminal 41 and contact pin 92 can be increased. This facilitates heat transfer from terminal 41 to contact pin 92, thereby further improving heat dissipation. Furthermore, the contact resistance between terminal 41 and contact pin 92 can be reduced, and the electrical connection between terminal 41 and contact pin 92 can be further stabilized.

[0069] (Example of the second variation of the first implementation) Next, a second variation of the first embodiment will be described. The difference between the second variation and the first variation is that a non-planar portion 120 is provided in the area of ​​the terminal 41 that overlaps with the bent portion 92b of the contact pin 92. Furthermore, the configuration, except as described below, is the same as that of the first embodiment.

[0070] Figures 14A and 14B are diagrams showing the terminal 41 of the second variation of the first embodiment. In this variation, the terminal 41 has a first region R1 and a second region R2. The second region R2 has the aforementioned non-planar portion 50. That is, the second region R2 has a concave-convex structure with alternating recesses 61 and protrusions 62 by providing a plurality of recesses 51. On the other hand, the first region R1 has a non-planar portion 120. The non-planar portion 120 is an example of a "second non-planar portion".

[0071] In this variation, the non-planar portion 120 has a plurality of recesses 121. In the examples shown in Figures 14A and 14B, three recesses 121 are arranged in the X direction. When viewed from the Z direction, each recess 121 is a rectangular shape extending linearly along the Y direction. The width of the recess 121 in the Y direction is greater than the width of the recess 121 in the X direction. The recess 121 is a bottomed hole provided on the surface of the terminal 41. In this variation, by providing a plurality of recesses 121, the first region R1 has a concave-convex structure with alternating recesses 131 and protrusions 132. The recesses 131 and protrusions 132 are arranged alternately in the X direction. The recess 131 is an example of a "second recess". The protrusion 132 is an example of a "second protrusion".

[0072] (shape of concave portion) Recess 131 is formed by recess 121. In other words, "recess 131" can be replaced by "recess 121". A plurality of recesses 131 are arranged at equal intervals in the X direction. The width of recess 131 in the X direction is, for example, the same as the width of recess 61 in the X direction. The width of recess 131 in the Y direction is, for example, greater than the width of recess 61 in the Y direction. The width of recess 131 in the Y direction is, for example, greater than the width of recess 131 in the X direction. Recess 131 extends linearly along the Y direction. The width of recess 131 in the Y direction is greater than the width of the bent portion 92b of contact pin 92 in the Y direction.

[0073] (The shape of the convex part) The protrusion 132 is defined by a plurality of recesses 131, specifically the portion defined between two adjacent recesses 131. In this variation, the protrusion 132 is defined between two adjacent recesses 131 in the X direction. The width of the protrusion 132 in the X direction is, for example, the same as the width of the protrusion 62 in the X direction. The width of the protrusion 132 in the Y direction is, for example, greater than the width of the protrusion 62 in the Y direction. The width of the protrusion 132 in the Y direction is greater than the width of the protrusion 132 in the X direction. The protrusion 132 extends linearly along the Y direction. The width of the protrusion 132 in the Y direction is greater than the width of the bent portion 92b of the contact pin 92 in the Y direction. In this variation, the bent portion 92b of the contact pin 92 is connected to the protrusion 132 in the terminal 41. The width of the contact portion CP of the terminal 41 and the contact pin 92 in the Y direction is the same as the width of the bent portion 92b of the contact pin 92 in the Y direction.

[0074] According to this embodiment, compared to the first embodiment, the contact portion CP between terminal 41 and contact pin 92 can be increased. This facilitates heat transfer from terminal 41 to contact pin 92, thereby further improving heat dissipation. Furthermore, the contact resistance between terminal 41 and contact pin 92 can be reduced, and the electrical connection between terminal 41 and contact pin 92 can be further stabilized.

[0075] Alternatively, in the second variation, a portion of the bent portion 92b of the contact pin 92 may also enter the recess 131. The following description will explain the state in which a portion of the bent portion 92b of the contact pin 92 enters the recess 131.

[0076] Figures 15A and 15B show the terminal 41 of the second variation of the first embodiment. In the example shown in Figures 15A and 15B, in this variation, a portion of the bent portion 92b of the contact pin 92 enters a recess 131. Hereinafter, the recess 131 into which a portion of the bent portion 92b enters is referred to as "recess 131S". In this case, a contact portion CP (first contact portion CP1) is formed at the boundary between the recess 131S and the protrusion 132. The protrusion 132 is adjacent to the recess 131S on one side in the X direction. Furthermore, another contact portion CP (second contact portion CP2) is formed at the boundary between the recess 131S and the protrusion 132. The protrusion 132 is adjacent to the recess 131S on the other side in the X direction.

[0077] According to this embodiment, compared to the first embodiment, the number of contact portions CP between terminal 41 and contact pin 92 can be increased. This facilitates heat transfer from terminal 41 to contact pin 92, thereby further improving heat dissipation. Furthermore, the contact resistance between terminal 41 and contact pin 92 can be reduced, and the electrical connection between terminal 41 and contact pin 92 can be further stabilized.

[0078] (Example of the third variation of the first implementation) Next, a third variation of the first embodiment will be described. The difference between the third variation and the second variation of the first embodiment is that an inclined portion 141 is provided around the periphery of the recess 131. Furthermore, the configuration, except as described below, is the same as that of the second variation of the first embodiment.

[0079] Figures 16A and 16B are diagrams showing the terminal 41 of the third variation of the first embodiment. In this variation, the terminal 41 has a first region R1 and a second region R2. The first region R1 has the aforementioned non-planar portion 120. That is, the first region R1 has a concave-convex structure with alternating recesses 131 and protrusions 132 by providing a plurality of recesses 121. On the other hand, the second region R2 has the aforementioned non-planar portion 50. That is, the second region R2 has a concave-convex structure with alternating recesses 61 and protrusions 62 by providing a plurality of recesses 51. A portion of the bent portion 92b of the contact pin 92 enters one recess 131 (recess 131S).

[0080] In this variation, an inclined portion 141 is provided at the periphery (e.g., the entire periphery) of the recess 131. For example, the inclined portion 141 is formed in a ring shape along the two edges of the recess 131 in the X direction and the two edges of the recess 131 in the Y direction. From another viewpoint, the inclined portion 141 is provided at the two edges of the protrusion 132 in the X direction. Alternatively, the inclined portion 141 may be provided at only one edge of the protrusion 132 in the X direction that is in contact with the curved portion 92b of the contact pin 92. The inclined portion 141 is inclined relative to the first surface 11a of the substrate 11. The inclined portion 141 is provided such that the corners of the protrusion 132 are chamfered. The inclined portion 141 may be a planar inclined portion or an inclined portion with an arc. The curved portion 92b of the contact pin 92 is in contact with the inclined portion 141.

[0081] One method for manufacturing the inclined portion 141 is as follows. Between the steps in FIG11(h) and FIG11(i), isotropic etching (dry etching or wet etching) is performed on the first plating layer 101. Thereby, an inclined portion is formed at the edge of the first plating layer 101. Subsequently, a second plating layer 102 and a third plating layer 103 are formed on the first plating layer 101 on which the inclined portion is formed by the steps described in the first embodiment. Thereby, the inclined portion 141 is formed on the periphery (e.g., the entire periphery) of the recess 131 in a manner similar to that formed on the inclined portion of the first plating layer 101.

[0082] According to this configuration, compared to the first embodiment, the size of the contact portion CP between the terminal 41 and the contact pin 92 can be increased. This facilitates heat transfer from the terminal 41 to the contact pin 92, thereby further improving heat dissipation. Furthermore, the contact resistance between the terminal 41 and the contact pin 92 can be reduced, and the electrical connection between the terminal 41 and the contact pin 92 can be further stabilized.

[0083] (Second Implementation) Next, the second embodiment will be described. The difference between the second embodiment and the first embodiment is that a plurality of protrusions 151 are provided instead of a plurality of recesses 51. Furthermore, the configuration, except as described below, is the same as that of the first embodiment.

[0084] Figure 17 is a perspective view showing the terminal 41 of the semiconductor memory device 10 in the second embodiment. As shown in Figure 17, the terminal 41 has a non-planar portion 50A. The non-planar portion 50A is an example of the "first non-planar portion".

[0085] The non-planar portion 50A has a plurality of protrusions 151. Each protrusion 151 is a columnar protrusion protruding along the Z direction. For example, each protrusion 151 protrudes towards the outside of the semiconductor memory device 10. The plurality of protrusions 151 are arranged in a matrix of 10 rows in the X direction and 7 rows in the Y direction, for example. In this embodiment, by providing a plurality of protrusions 151, the non-planar portion 50A has a concave-convex structure with alternating recesses 61A and convexities 62A. For example, the recesses 61A and convexities 62A are arranged alternately in the X and Y directions. The recess 61A is an example of a "first recess". The convexity 62A is an example of a "first convexity". In addition, the non-planar portion 50A does not need to be provided in the entire area of ​​the terminal 41, or it can be provided only in a part of the terminal 41.

[0086] (The shape of the convex part) Figures 18A-18C show the terminals 41 of the semiconductor memory device 10 according to the second embodiment. The protrusion 62A is formed by the protrusion 151. In other words, in this embodiment, "protrusion 62A" can be replaced by "protrusion 151". A plurality of protrusions 62A are arranged at equal intervals P1 in the X direction. The width of the protrusion 62A in the X direction is, for example, the same as or greater than the interval P1. Similarly, a plurality of protrusions 62A are arranged at equal intervals P2 in the Y direction. The width of the protrusion 62A in the Y direction is, for example, the same as or greater than the interval P2. When viewed from the Z direction, the protrusion 62A is a polygon. For example, the protrusion 62A is a quadrilateral when viewed from the Z direction. However, the protrusion 62A can be a triangle or a pentagon or larger polygon, or it can be linear or circular. The height of the protrusion 62A is, for example, 1 μm or more. In this embodiment, the height of the protrusion 62A is several μm to tens of μm. The width of the protrusion 62A in both the X and Y directions is, for example, 1 μm or more. In this embodiment, the width of the protrusion 62A in both the X and Y directions is several μm to hundreds of μm. To ensure the rigidity of the protrusion 62A in contact with the contact pin 92, the aspect ratio of the protrusion and concave is preferably 1 or less.

[0087] (shape of concave portion) The recess 61A is defined between two adjacent protrusions 62A by providing a plurality of protrusions 62A. In this application, "recess" means a portion that is recessed towards the insulating substrate 21 compared to the end face of a protrusion. In this embodiment, the recess 61A is defined between two adjacent protrusions 62A in the X or Y direction.

[0088] The recess 61A extends linearly, for example, along the X or Y direction. For example, a plurality of recesses 61A may include nine recesses 61A that are spaced apart in the X direction and extend in the Y direction, and six recesses 61A that are spaced apart in the Y direction and extend in the X direction.

[0089] With this configuration, the surface area (heat dissipation area) of the terminal 41 can be increased by the alternating arrangement of the recesses 61A and protrusions 62A. In this way, the heat dissipation of the semiconductor memory device 10 can be improved.

[0090] (Example of the first variation of the second implementation) Next, a first variation of the second embodiment will be described. The difference between the first variation and the second embodiment is that a planar portion 111 is provided in the area of ​​the terminal 41 that overlaps with the bent portion 92b of the contact pin 92. Furthermore, the configuration, except as described below, is the same as that of the second embodiment.

[0091] Figures 19A and 19B are diagrams showing the terminal 41 of the first variation of the second embodiment. In this variation, the terminal 41 has a first region R1 and a second region R2. The second region R2 has the aforementioned non-planar portion 50A. That is, the second region R2 has a concave-convex structure with alternating recesses 61A and convex portions 62A by providing a plurality of protrusions 151.

[0092] On the other hand, the first region R1 does not have a non-planar portion 50A. The first region R1 has a planar portion 111 that is flatter than the non-planar portion 50A. The planar portion 111 is provided, for example, throughout the first region R1. The width of the planar portion 111 in the Y direction is greater than the width of the protrusion 62A in the Y direction. The width of the planar portion 111 in the Y direction is greater than the width of the bent portion 92b of the contact pin 92 in the Y direction. The width of the contact portion CP of the terminal 41 and the contact pin 92 in the Y direction is the same as the width of the bent portion 92b of the contact pin 92 in the Y direction.

[0093] According to this configuration, compared to the second embodiment, the contact portion CP between terminal 41 and contact pin 92 can be increased. This facilitates heat transfer from terminal 41 to contact pin 92, thereby further improving heat dissipation. Furthermore, the contact resistance between terminal 41 and contact pin 92 can be reduced, and the electrical connection between terminal 41 and contact pin 92 can be further stabilized.

[0094] (Second variation of the second implementation) Next, a second variation of the second embodiment will be described. The difference between the second variation and the second embodiment is that a non-planar portion 120A is provided in the area of ​​the terminal 41 that overlaps with the bent portion 92b of the contact pin 92. Furthermore, the configuration, except as described below, is the same as that of the second embodiment.

[0095] Figures 20A and 20B show the terminal 41 of the second variation of the second embodiment. In this variation, the terminal 41 has a first region R1 and a second region R2. The second region R2 has the aforementioned non-planar portion 50A. That is, the second region R2 has a concave-convex structure with alternating recesses 61A and convex portions 62A by providing a plurality of protrusions 151. On the other hand, the first region R1 has a non-planar portion 120A. The non-planar portion 120A is an example of the "second non-planar portion".

[0096] In this variation, the non-planar portion 120A has a plurality of protrusions 161. In the examples shown in Figures 20A and 20B, three protrusions 161 are arranged in the X direction. When viewed from the Z direction, each protrusion 161 is a rectangular shape extending linearly along the Y direction. The width of the protrusion 161 in the Y direction is greater than the width of the protrusion 151 in the Y direction. The protrusion height of the protrusion 161 is the same as the protrusion height of the protrusion 151. In this variation, by providing a plurality of protrusions 161, the first region R1 has a concave-convex structure with alternating concave portions 131A and convex portions 132A. The concave portions 131A and convex portions 132A are arranged alternately in the X direction. The concave portion 131A is an example of a "second concave portion". The convex portion 132A is an example of a "second convex portion".

[0097] (The shape of the convex part) The protrusion 132A is formed by the protrusion 161. In other words, "protrusion 132A" can be replaced by "protrusion 161". A plurality of protrusions 132A are arranged at equal intervals in the X direction. The width of the protrusion 132A in the X direction is, for example, the same as the width of the protrusion 62A in the X direction. The width of the protrusion 132A in the Y direction is, for example, greater than the width of the protrusion 62A in the Y direction. The width of the protrusion 132A in the Y direction is greater than the width of the protrusion 132A in the X direction. The protrusion 132A extends linearly in the Y direction. The width of the protrusion 132A in the Y direction is greater than the width of the bent portion 92b of the contact pin 92 in the Y direction. In this variation, the bent portion 92b of the contact pin 92 is connected to the protrusion 132A on the terminal 41. The width of the contact portion CP of the terminal 41 and the contact pin 92 in the Y direction is the same as the width of the bent portion 92b of the contact pin 92 in the Y direction.

[0098] (shape of concave portion) The recess 131A is defined by a plurality of protrusions 132A between two adjacent protrusions 132A. In this variation, the recess 131A is defined between two adjacent protrusions 132A in the X direction. The width of the recess 131A in the X direction is, for example, the same as the width of the recess 61 in the X direction. The width of the recess 131A in the Y direction is, for example, greater than the width of the recess 61A in the Y direction. The width of the recess 131A in the Y direction is greater than the width of the recess 131A in the X direction. The recess 131A extends linearly along the Y direction. The width of the recess 131A in the Y direction is greater than the width of the bent portion 92b of the contact pin 92 in the Y direction.

[0099] According to this embodiment, compared to the second embodiment, the contact portion CP between terminal 41 and contact pin 92 can be increased. This facilitates heat transfer from terminal 41 to contact pin 92, thereby further improving heat dissipation. Furthermore, the contact resistance between terminal 41 and contact pin 92 can be reduced, and the electrical connection between terminal 41 and contact pin 92 can be further stabilized.

[0100] Alternatively, in the second variation, a portion of the bent portion 92b of the contact pin 92 may also enter the recess 131A. The following description will explain the state in which a portion of the bent portion 92b of the contact pin 92 enters the recess 131A.

[0101] Figures 21A and 21B show the terminal 41 of the second variation of the second embodiment. In the example shown in Figures 21A and 21B, in this variation, a portion of the bent portion 92b of the contact pin 92 enters a recess 131A. Hereinafter, the recess 131A into which a portion of the bent portion 92b enters is referred to as "recess 131AS". In this case, a contact portion CP (first contact portion CP1) is formed at the boundary between the recess 131AS and the protrusion 132A adjacent to the recess 131AS on one side in the X direction. Furthermore, another contact portion CP (second contact portion CP2) is formed at the boundary between the recess 131AS and the protrusion 132A adjacent to the recess 131AS on the other side in the X direction.

[0102] According to this embodiment, compared to the second embodiment, the number of contact portions CP between terminal 41 and contact pin 92 can be increased. This facilitates heat transfer from terminal 41 to contact pin 92, thereby further improving heat dissipation. Furthermore, the contact resistance between terminal 41 and contact pin 92 can be reduced, and the electrical connection between terminal 41 and contact pin 92 can be further stabilized.

[0103] (Example of the third variation of the second implementation) Next, a third variation of the second embodiment will be described. The difference between the third variation and the second embodiment is that an inclined portion 141 is provided around the periphery of the protrusion 62A (protrusion 151). Furthermore, the configuration, except as described below, is the same as that of the second embodiment.

[0104] Figures 22A and 22B show the terminal 41 in the third variation of the second embodiment. In this variation, the terminal 41 has a first region R1 and a second region R2. In this variation, each of the first region R1 and the second region R2 has the aforementioned non-planar portion 50A. That is, each of the first region R1 and the second region R2 has a concave-convex structure with alternating recesses 61A and convex portions 62A by providing a plurality of protrusions 151.

[0105] In this variation, an inclined portion 141 is provided at the periphery (e.g., the entire periphery) of the protrusion 62A (protrusion 151) provided in the first region R1. For example, the inclined portion 141 is provided in a ring shape along both edges of the protrusion 62A in the X direction and both edges of the protrusion 62A in the Y direction. Furthermore, the inclined portion 141 only needs to be provided at least at one edge of the protrusion 62A in the X direction that connects with the bent portion 92b of the contact pin 92. The inclined portion 141 is inclined relative to the first surface 11a of the substrate 11. The inclined portion 141 is provided by chamfering the corners of the protrusion 62A. The inclined portion 141 can be a planar inclined portion or an inclined portion with an arc. The bent portion 92b of the contact pin 92 connects to the inclined portion 141.

[0106] According to this configuration, compared to the second embodiment, the size of the contact portion CP between terminal 41 and contact pin 92 can be increased. This facilitates heat transfer from terminal 41 to contact pin 92, thereby further improving heat dissipation. Furthermore, the contact resistance between terminal 41 and contact pin 92 can be reduced, and the electrical connection between terminal 41 and contact pin 92 can be further stabilized.

[0107] (Example of the fourth variation of the second implementation) Next, a fourth variation of the second embodiment will be described. The difference between the fourth variation and the second embodiment is that an inclined portion 141 is provided around the periphery of the protrusion 132A (protrusion 161). Furthermore, the configuration, except as described below, is the same as that of the second embodiment.

[0108] Figures 23A and 23B are diagrams showing the terminal 41 of the fourth variation of the second embodiment. In this variation, the terminal 41 has a first region R1 and a second region R2. In this variation, the first region R1 has the aforementioned non-planar portion 120A. That is, the first region R1 has a concave-convex structure with alternating recesses 131A and convex portions 132A by providing a plurality of protrusions 161. On the other hand, the second region R2 has the aforementioned non-planar portion 50A. That is, the second region R2 has a concave-convex structure with alternating recesses 61A and convex portions 62A by providing a plurality of protrusions 151.

[0109] In this variation, an inclined portion 141 is provided around the periphery (e.g., the entire periphery) of the protrusion 132A (protrusion 161) provided in the first region R1. For example, the inclined portion 141 is provided in a ring shape along both edges of the protrusion 132A in the X direction and both edges of the protrusion 132A in the Y direction. Alternatively, the inclined portion 141 may be provided on only one edge of the protrusion 132A in the X direction that is in contact with the curved portion 92b of the contact pin 92. The inclined portion 141 is inclined relative to the first surface 11a of the substrate 11. The inclined portion 141 is provided by chamfering the corners of the protrusion 132A. The inclined portion 141 may be a planar inclined portion or an inclined portion with an arc. The curved portion 92b of the contact pin 92 is in contact with the inclined portion 141.

[0110] According to this configuration, compared to the second embodiment, the size of the contact portion CP between terminal 41 and contact pin 92 can be increased. This facilitates heat transfer from terminal 41 to contact pin 92, thereby further improving heat dissipation. Furthermore, the contact resistance between terminal 41 and contact pin 92 can be reduced, and the electrical connection between terminal 41 and contact pin 92 can be further stabilized.

[0111] (5th variation of the second implementation) Next, a fifth variation of the second embodiment will be described. The difference between the fifth variation and the second embodiment is that a non-planar portion 170 is provided. Furthermore, the configuration, except as described below, is the same as that of the second embodiment.

[0112] Figure 24 is a diagram showing the terminal 41 of the fifth variation of the second embodiment. In this variation, the terminal 41 has a first region S1 and a second region S2.

[0113] Region S1, when viewed from the Z direction, is the area that at least partially overlaps with the curved portion 92b of the contact pin 92. The width of Region S1 in the Y direction is greater than the width of the curved portion 92b of the contact pin 92 in the Y direction. The width of Region S1 in the X direction is greater than the width of Region S1 in the Y direction. The width of Region S1 in the X direction is, for example, more than half the width of Terminal 41 in the X direction. The center C2 of Region S1 in the X direction is located offset to one side relative to the center C1 of Terminal 41 in the X direction. This side is the side where the contact pin 92 is closest to Terminal 41 when the contact pin 92 contacts Terminal 41.

[0114] Region S2 is the area of ​​terminal 41 that is offset from region S1. For example, when viewed from the Z direction, region S2 is the area that does not overlap with the bend 92b of contact pin 92 compared to region S1. Region S2 is the area located between region S1 and the ends of terminal 41 in the X and Y directions. For example, region S2 is a frame-shaped area surrounding region S1.

[0115] In this variation, the second region S2 has the aforementioned non-planar portion 50A. That is, the second region S2 has a concave-convex structure with alternating recesses 61A and convex portions 62A by providing a plurality of protrusions 151. On the other hand, the first region S1 has a non-planar portion 170. The non-planar portion 170 is an example of a "second non-planar portion".

[0116] In this variation, the non-planar portion 170 has a plurality of protrusions 171. In the example shown in FIG24, three protrusions 171 are arranged in the Y direction. When viewed from the Z direction, each protrusion 171 is a rectangular shape extending linearly along the X direction. The width of the protrusion 171 in the X direction is greater than the width of the protrusion 151 in the X direction. The protrusion height of the protrusion 171 is the same as the protrusion height of the protrusion 151. In this variation, by providing a plurality of protrusions 171, the first region S1 has a concave-convex structure with alternating concave portions 181 and convex portions 182. The concave portions 181 and convex portions 182 are arranged alternately in the X direction. The concave portion 181 is an example of a "second concave portion". The convex portion 182 is an example of a "second convex portion".

[0117] (The shape of the convex part) The protrusion 182 is formed by the projection 171. In other words, "protrusion 182" can be replaced by "projection 171". A plurality of protrusions 182 are arranged at equal intervals in the Y direction. The width of the protrusion 182 in the Y direction is, for example, the same as the width of the protrusion 62A in the Y direction. The width of the protrusion 182 in the X direction is, for example, greater than the width of the protrusion 62A in the X direction. The width of the protrusion 182 in the X direction is, for example, greater than the width of the protrusion 182 in the Y direction. The protrusion 182 extends linearly in the X direction. The width of the protrusion 182 in the X direction is, for example, more than half of the width of the terminal 41 in the X direction. The center C3 of the protrusion 182 in the X direction is located at a position offset to one side in the X direction relative to the center C1 of the terminal 41. The aforementioned side is the side where the contact pin 92 is close to the terminal 41 when the contact pin 92 contacts the terminal 41.

[0118] The width of the protrusion 182 in the Y direction is smaller than the width of the bent portion 92b of the contact pin 92 in the Y direction. In this variation, the bent portion 92b of the contact pin 92 is in contact with the protrusion 182 on the terminal 41. When the terminal 41 is in contact with the contact pin 92, the contact pin 92 can move along the surface of the protrusion 182 in the X direction.

[0119] (shape of concave portion) The recess 181 is defined by a plurality of protrusions 182, specifically between two adjacent protrusions 182. In this variation, the recess 181 is defined between two adjacent protrusions 182 in the Y direction. The width of the recess 181 in the Y direction is the same as the width of the recess 61A in the Y direction. The recess 181 extends linearly in the X direction. The width of the recess 181 in the X direction is, for example, greater than the width of the recess 61A in the X direction.

[0120] This configuration improves the rigidity of the protrusion 182 relative to the frictional force generated in the X direction when in contact with the contact pin 92. It also prevents the protrusion 182 from collapsing when in contact with the contact pin 92. Therefore, it easily suppresses electrical malfunctions related to the terminal 41.

[0121] (Sixth variation of the second implementation) Next, a sixth variation of the second embodiment will be described. The difference between the sixth variation and the second embodiment is that the first region S1 has a non-planar portion 50. Furthermore, the configuration, except as described below, is the same as that of the second embodiment.

[0122] Figure 25 shows the terminal 41 of the sixth variation of the second embodiment. In this variation, the terminal 41 has a first region S1 and a second region S2. The second region S2 has the aforementioned non-planar portion 50A. That is, the second region S2 has a concave-convex structure with alternating recesses 61A and convex portions 62A by providing a plurality of protrusions 151. In this variation, the non-planar portion 50A is an example of the "first non-planar portion".

[0123] On the other hand, the first region S1 has a protrusion 191 and a non-planar portion 50 disposed on the protrusion 191. The protrusion height of the protrusion 191 is the same as the protrusion height of the protrusion 151. The width of the protrusion 191 in the Y direction is greater than the width of the protrusion 151 in the Y direction. The width of the protrusion 191 in the Y direction is, for example, greater than the width of the bent portion 92b of the contact pin 92 in the Y direction. The width of the protrusion 191 in the X direction is, for example, greater than the width of the protrusion 191 in the Y direction. The width of the protrusion 191 in the X direction is, for example, more than half the width of the terminal 41 in the X direction. The center C5 of the protrusion 191 in the X direction is located at a position offset to one side in the X direction relative to the center C1 of the terminal 41. The aforementioned side is the side where the contact pin 92 is closest to the terminal 41 when the contact pin 92 contacts the terminal 41.

[0124] A non-planar portion 50 is provided on the surface of the protrusion 191. That is, the protrusion 191 has a concave-convex structure with alternating recesses 61 and convex portions 62 by providing a plurality of recesses 51. In this variation, the non-planar portion 50 is an example of a "second non-planar portion".

[0125] With this configuration, the rigidity of the protrusion 191 can be increased relative to the frictional force generated in the X direction when in contact with the contact pin 92. This prevents the protrusion 191 from collapsing when in contact with the contact pin 92. Therefore, it is easier to suppress electrical malfunctions related to the terminal 41.

[0126] (Seventh variation of the second implementation) Next, the seventh variation of the second embodiment will be described. The difference between the seventh variation and the sixth variation of the second embodiment is that the recess 61 provided in the protrusion 191 extends linearly in the X direction. Furthermore, the configuration other than that described below is the same as that of the sixth variation of the second embodiment.

[0127] Figure 26 shows a terminal 41 in the seventh variation of the second embodiment. In this variation, the terminal 41 has a protrusion 191 and a non-planar portion 50 disposed on the protrusion 191. The recess 61 and the convex portion 62 included in the non-planar portion 50 extend linearly in the Y direction. The width of each of the recess 61 and the convex portion 62 in the X direction is, for example, more than half of the width of the terminal 41 in the X direction.

[0128] With this configuration, the rigidity of the protrusion 191 can be increased relative to the frictional force generated in the X direction when in contact with the contact pin 92. This prevents the protrusion 191 from collapsing when in contact with the contact pin 92. Therefore, it is easier to suppress electrical malfunctions related to the terminal 41.

[0129] (Example 8 of the second implementation) Next, the eighth variation of the second embodiment will be described. The difference between the eighth variation and the second embodiment is that the first region R1 has a protrusion 200. Furthermore, the configuration other than that described below is the same as that of the second embodiment.

[0130] Figures 27A and 27B show the terminal 41 of the eighth variation of the second embodiment. In this variation, the terminal 41 has a first region R1 and a second region R2. The second region R2 has the aforementioned non-planar portion 50A. That is, the second region R2 has a concave-convex structure with alternating recesses 61A and convex portions 62A by providing a plurality of protrusions 151.

[0131] On the other hand, the first region R1 has a protrusion 200. The protrusion 200 is in contact with the curved portion 92b of the contact pin 92. The protrusion 200 is an example of a "support portion". In this embodiment, the surface of the protrusion 200 has a curved surface 201 that curves in the same direction as the curvature of the curved portion 92b. For example, the curved surface 201 has an undulating shape with the same curvature as the curved portion 92b. The contact portion CP of the terminal 41 and the contact pin 92 is formed along the curved surface 201.

[0132] According to this embodiment, compared to the first embodiment, the contact portion CP between terminal 41 and contact pin 92 can be increased. This facilitates heat transfer from terminal 41 to contact pin 92, thereby further improving heat dissipation. Furthermore, the contact resistance between terminal 41 and contact pin 92 can be reduced, and the electrical connection between terminal 41 and contact pin 92 can be further stabilized.

[0133] (Example 9 of the second implementation) Next, a ninth variation of the second embodiment will be described. The difference between the ninth variation and the second embodiment is that at least a portion of the protrusion 62A has a trapezoidal cross-section. Furthermore, the configuration, except as described below, is the same as that of the second embodiment.

[0134] Figures 28A and 28B show the terminal 41 of the ninth variation of the second embodiment. In this variation, the cross-section of the protrusion 62A (protrusion 151) at least provided in the first region S1 is formed into a trapezoidal shape. That is, as it approaches the body portion 45, the width of the protrusion 62A gradually increases in at least one of the X and Y directions.

[0135] This configuration improves the rigidity of the protrusion 62A relative to the frictional force generated in the X direction when in contact with the contact pin 92. It also prevents the protrusion 62A from collapsing when in contact with the contact pin 92. Therefore, it easily suppresses electrical malfunctions related to the terminal 41.

[0136] (Example 10 of the second implementation) Next, the tenth variation of the second embodiment will be described. The difference between the tenth variation and the second embodiment is that at least a portion of the protrusion 132A has a trapezoidal cross-section. Furthermore, the configuration other than that described below is the same as that of the second embodiment.

[0137] Figures 29A and 29B show the terminal 41 of the 10th variation of the second embodiment. In this variation, at least a portion of the protrusion 132A (protrusion 161) has a trapezoidal cross-section. That is, as it approaches the body portion 45, the width of the protrusion 62A gradually increases in at least one of the X and Y directions.

[0138] This configuration improves the rigidity of the protrusion 132A relative to the frictional force generated in the X direction when in contact with the contact pin 92. It also prevents the protrusion 132A from collapsing when in contact with the contact pin 92. Therefore, it easily suppresses electrical malfunctions related to the terminal 41.

[0139] (Third Implementation) Next, the third embodiment will be described. The difference between the third embodiment and the first or second embodiment is that the solder resist layer 32 has a non-planar portion 310. Furthermore, the configuration other than that described below is the same as that of the first or second embodiment. The terminals 41 of the semiconductor memory device 10 in the third embodiment also have non-planar portions 50, 50A, 120, 120A, and 170, similar to those in the first embodiment, variations of the first embodiment, the second embodiment, or variations of the second embodiment.

[0140] Figure 30 shows a semiconductor memory device 10 according to a third embodiment. In this embodiment, the solder resist layer 32 has a non-planar portion 310. The non-planar portion 310 is disposed in the region between region A2 and region A3. The non-planar portion 310 is an example of a "third non-planar portion". The non-planar portion 310 is covered, for example, by a thermally conductive sheet 70. The thermally conductive sheet 70 is in contact with the non-planar portion 310.

[0141] Figures 31A and 31B show the semiconductor memory device 10 according to the third embodiment. The surface layer 30 has a non-planar portion 310. When viewed from the Z-direction, the non-planar portion 310 is provided in the surface layer 30 in an area offset from the plurality of terminals 41. The non-planar portion 310 has a plurality of recesses 311. The plurality of recesses 311 are arranged, for example, in a matrix configuration of 4 rows in the X-direction and 8 rows in the Y-direction. The recesses 311 are provided in the bottomed-hole portion of the solder resist layer 32. The recesses 311 reach a position closer to the insulating substrate 21 than a portion of the terminals 41 in the Z-direction. For example, the recesses 311 reach the surface 21s of the insulating substrate 21. In this embodiment, by providing the aforementioned plurality of recesses 311, the non-planar portion 310 has a concave-convex structure with alternating recesses 321 and protrusions 322. For example, the recesses 321 and the convex portions 322 are arranged alternately in the X and Y directions. The recess 321 is an example of a "third recess". The convex portion 322 is an example of a "third convex portion". Furthermore, details of the non-planar portion 310 are described in the specification of Japanese Patent Application 2023-149155. The entirety of that document is incorporated herein by reference.

[0142] (Fourth Implementation) Next, the fourth embodiment will be described. The fourth embodiment differs from the first or second embodiment in that the solder resist layer 32 has a non-planar portion 310A. Furthermore, the configuration other than that described below is the same as that of the first or second embodiment. The terminals 41 of the semiconductor memory device 10 in the fourth embodiment also have non-planar portions 50, 50A, 120, 120A, and 170, similar to those in the first embodiment, variations of the first embodiment, the second embodiment, or variations of the second embodiment.

[0143] Figures 32A and 32B show the semiconductor memory device 10 according to a fourth embodiment. In this embodiment, the solder resist layer 32 has a non-planar portion 310A. The non-planar portion 310A is disposed in the region between region A2 and region A3. The non-planar portion 310A is an example of a "third non-planar portion". The non-planar portion 310A is covered, for example, by a thermally conductive sheet 70. The thermally conductive sheet 70 is in contact with the non-planar portion 310A.

[0144] When viewed from the Z-direction, the non-planar portion 310A is provided in the surface portion 30 in a region offset from the plurality of terminals 41. The non-planar portion 310A has a recess 330 and a plurality of protrusions 331. The recess 330 is recessed relative to regions A2 and A3 in a direction approaching the insulating substrate 21. The recess 330 reaches a position in the Z-direction that is closer to the insulating substrate 21 than a portion of the terminals 41. For example, the recess 330 reaches the surface 21s of the insulating substrate 21.

[0145] A plurality of protrusions 331 are provided in the recess 330. Each protrusion 331 is a columnar protrusion protruding in the Z direction from inside the recess 330. For example, each protrusion 331 protrudes from the surface 21s of the insulating substrate 21 in a direction away from the insulating substrate 21. The plurality of protrusions 331 are arranged in a matrix of 4 rows in the X direction and 8 rows in the Y direction, for example. In this embodiment, the non-planar portion 310A has a concave-convex structure with alternating recesses 321A and convex portions 322A by providing the above-mentioned plurality of protrusions 331. For example, the recesses 321A and convex portions 322A are arranged alternately in the X direction and the Y direction. The recess 321A is an example of a "third recess". The convex portion 322A is an example of a "third convex portion". Furthermore, details of the non-planar portion 310A are described in the description of the aforementioned Japanese Patent Application 2023-149155.

[0146] (Common variations in implementation forms 1 through 4) Next, we will explain the common variations in the first to fourth implementation forms. Figures 33A and 33B are diagrams showing variations of the semiconductor memory device 10 in embodiments 1 to 4. In this variation, the molding resin 15 has a second surface 15b located on the opposite side of the substrate 11. The second surface 15b has a non-planar portion 410 with alternating recesses 411 and protrusions 412. The recesses 411 and protrusions 412 are arranged alternately, for example, in the X direction and the Y direction.

[0147] A plurality of recesses 411 are arranged at equal intervals in the X direction. Also, a plurality of recesses 411 are arranged at equal intervals in the Y direction. A protrusion 412 is defined by the portion between two adjacent recesses 411 provided with the plurality of recesses 411. In this application, "protrusion" refers to a portion that protrudes away from the insulating substrate 21 compared to the bottom of the recess 411. In this embodiment, the protrusion 412 is formed of the same insulating material as the molding resin 15.

[0148] Based on this configuration, the heat dissipation area of ​​the semiconductor memory device 10 can be further increased. This allows for a further improvement in the heat dissipation performance of the semiconductor memory device 10.

[0149] The first to fourth embodiments and variations have been described above. However, the embodiments and variations are not limited to the examples described above. For example, the thermally conductive sheet 70 is not a necessary component. Furthermore, the semiconductor memory device 10 is not limited to the case where the recesses and protrusions are formed solely by any one of a plurality of recesses and a plurality of protrusions. For example, the semiconductor memory device 10 may also form the recesses and protrusions by having both a plurality of recesses and a plurality of protrusions.

[0150] Furthermore, connector 90 is not limited to hinged (clamshell) connectors. For example, connector 90 can be a push-pull connector or a double push connector.

[0151] According to at least one embodiment described above, a semiconductor memory device includes a first substrate, a molding resin, and a memory chip. The first substrate has a first surface and a second surface located opposite the first surface. The molding resin covers the first surface when viewed from the thickness direction of the first substrate. The memory chip is disposed between the first surface and the molding resin. The first substrate includes terminals disposed on the second surface and exposed to the outside. The terminals have: a first non-planar portion having at least one of a plurality of recesses and a plurality of protrusions, with the first recesses and first protrusions alternating. With this configuration, the heat dissipation of the semiconductor memory device can be improved.

[0152] While several embodiments of the present invention have been described, these embodiments are provided as examples and are not intended to limit the scope of the invention. These embodiments can be implemented in many other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments or variations thereof are included within the scope or spirit of the invention, and similarly, are also included within the scope of the invention described in the patent application and its equivalents.

[0153] 10: Semiconductor memory devices 10sa: 1st main side 10sb: 2nd main side 10sc: First end face 10sd: Second end face 10se: First side 10sf: Second side 11:Substrate (1st substrate) 11a: Page 1 11b: Page 2 12: Memory Chip 13: Controller 14: Electronic Components 15: Molding resin 15a: Page 1 15b: Page 2 21: Insulating substrate 21A: Core Material 21B: Prepreg 21s: Surface 22: Wiring pattern 22L: Wiring 30, 30A: Surface layer 31, 31A: Conductive patterns 32, 32A: Solder resist layer 32Aa: Cover 32h: Opening 41, 41A~41C: terminal 42: Wiring 45:Ontology part 46: Protective film 46a: First metal film 46b: Second metal film 50, 50A: Non-planar portion (first non-planar portion) 51: Depression 61, 61A: Recessed portion (1st recessed portion) 62, 62A:Protrusion (1st protrusion) 70: Thermal conductive sheet 80:Substrate (2nd substrate) 90: Connector 91: Connector body 91a: Wall 92: Contact pin 92a: Extension 92b: Bend 93: Maintain body 93a: Base end 93b1: First Support Department 93b2: Second Support Department 94a1: Part 1 94a2: Part 1 94b1: Part 2 94b2: Part 2 94c1: Part 3 94c2: Part 3 101: First coating layer 102: Second coating layer 103: Third coating layer 111: Planar part 120, 120A: Non-planar portion (second non-planar portion) 121: Depression 131, 131A: Recessed portion (2nd recessed portion) 131S, 131AS: concave part 132, 132A:Protrusion (2nd protrusion) 141: Inclined section 151: Protrusion 161: Protrusion 170: Non-planar part (2nd non-planar part) 171: Protrusion 181: concave part 182:convex part 191: Prominent part 200: Protrusion (Supporting Part) 201: Curved face 310, 310A: Non-planar portion (3rd non-planar portion) 311: Depression 321, 321A: Recessed portion (3rd recessed portion) 322, 322A:Protrusion (3rd protrusion) 330: Depression 331: Protrusion 410: Non-planar part 411: concave part 412:convex part A1~A3: Area BW: Joining line C1~C3, C5: Center CP: Contact part CP1: First Contact Section CP2: Second Contact Section HS: Main unit L: Length M1~M4: Masking M1a: Cover M1h~M4h: Opening P1, P2: Interval R1: Region 1 R2: Region 2 S: Containment Department S1: Area 1 S2: Area 2 T: Thickness W: Width

Claims

1. A semiconductor memory device comprising: a first substrate having a first surface, a second surface located opposite to the first surface, and an insulating layer disposed on the second surface; a molding resin covering the first surface when viewed from the thickness direction of the first substrate; and a memory chip disposed between the first surface and the molding resin; wherein the insulating layer has an opening that exposes a portion of the second surface; the first substrate comprising a terminal disposed on the surface and exposed to the outside in the opening; the terminal having a body portion disposed on the surface; a first non-planar portion having at least one of a plurality of recesses and a plurality of protrusions, wherein the first recesses and first protrusions are alternately arranged; the first non-planar portion being located opposite to the surface relative to the body portion.

2. The semiconductor memory device of claim 1, wherein the semiconductor memory device can be detachably mounted on a socket-type connector provided on a second substrate of a host machine.

3. The semiconductor memory device of claim 2, wherein the semiconductor memory device can be detachably mounted on the connector with the contact pins of the connector in contact with the terminals.

4. The semiconductor memory device of claim 3, wherein the contact pin has: a bent portion disposed at the end of the contact pin and bent toward the side opposite to the terminal; and the terminal has: a first region, at least a portion of which overlaps with the bent portion when viewed from the thickness direction of the first substrate; and a second region that is offset from the first region; and the first non-planar portion is at least disposed in the second region.

5. The semiconductor memory device of claim 4, wherein the first region has a planar portion that is flatter than the first non-planar portion.

6. The semiconductor memory device of claim 5, wherein when the extension direction of the contact pin is defined as a first direction and the direction intersecting the first direction is defined as a second direction, the width of the planar portion in the second direction is greater than the width of the first protrusion in the second direction.

7. The semiconductor memory device of claim 6, wherein the width of the planar portion in the second direction is greater than the width of the curved portion of the contact pin in the second direction.

8. The semiconductor memory device of claim 4, wherein when the extension direction of the contact pin is defined as a first direction and the direction intersecting the first direction is defined as a second direction, the first region has: a second non-planar portion having at least one of a plurality of recesses and a plurality of protrusions, and the second recesses and the second protrusions are alternately arranged, and when viewed from the thickness direction of the first substrate, the width of the second protrusion in the second direction is greater than the width of the second protrusion in the first direction.

9. The semiconductor memory device of claim 8, wherein the width of the second protrusion in the second direction is greater than the width of the first protrusion in the second direction.

10. The semiconductor memory device of claim 8 or 9, wherein the width of the second protrusion in the second direction is greater than the width of the bent portion of the contact pin in the second direction.

11. The semiconductor memory device of claim 8 or 9, wherein at least one of the second protrusions has an edge in the first direction that is inclined relative to the first surface.

12. The semiconductor memory device of claim 4, wherein when the extension direction of the contact pin is designated as a first direction and the direction intersecting the first direction is designated as a second direction, the first non-planar portion is disposed in the first region and the second region, and the edge of at least one of the first protrusions disposed in the first region in the first direction has an inclined portion that is inclined relative to the first surface.

13. The semiconductor memory device of claim 4, wherein when the extension direction of the contact pin is designated as a first direction and the direction intersecting the first direction is designated as a second direction, the first region has: a second non-planar portion having at least one of a plurality of recesses and a plurality of protrusions, wherein the second recesses and the second protrusions are alternately arranged, and the width of the second protrusion in the first direction is greater than the width of the second protrusion in the second direction.

14. The semiconductor memory device of claim 13, wherein the width of the second protrusion in the first direction is more than half the width of the terminal in the first direction.

15. The semiconductor memory device of claim 13 or 14, wherein the center of the second protrusion in the first direction is located offset to one side of the first direction relative to the center of the terminal in the first direction.

16. The semiconductor memory device of claim 4, wherein the first region has: a support portion that is in contact with the bent portion of the contact pin; and the support portion has: a curved portion that is bent in the same direction as the bending direction of the bent portion.

17. The semiconductor memory device of claim 1 or 2, wherein the first substrate has: a surface portion forming the second surface and including a conductive pattern containing the terminals and an insulating layer covering a portion of the conductive pattern; and the surface portion having, in a region offset from the terminals: a third non-planar portion having at least one of a plurality of recesses and a plurality of protrusions, wherein the third recesses and the third protrusions are alternately arranged.

18. The semiconductor memory device of claim 1 or 2, wherein the insulating layer is a solder resist layer.

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