Semiconductor device

Abstract

This disclosure provides a semiconductor device including a semiconductor layer, a core active region, and a termination region. The core active region is formed in the semiconductor layer. The termination region includes vertical path cells, a first type of deep trench termination cell, and a second type of deep trench termination cell. The vertical path cells are laterally disposed adjacent to the core active region and extend vertically from the upper surface of the semiconductor layer into the semiconductor layer at the depth of the vertical path cells. The first type of deep trench termination cell is laterally disposed adjacent to the vertical path cells. The first type of deep trench termination cell includes a first deep trench isolation structure and a first well region. The second type of deep trench termination cell includes a second deep trench isolation structure and a second well region.

Description

semiconductor components The present disclosure relates to a semiconductor device, and more particularly, to a terminal structure in a semiconductor device. High-voltage semiconductor devices, such as metal oxide semiconductor field-effect transistors (MOSFETs), junction field-effect transistors (JFETs), and double diffused metal oxide semiconductors (DMOSs), are widely used in various power management applications, including as power switching devices in power management devices for industrial and consumer power equipment. In most high-voltage applications, transistors must exhibit high voltage tolerance, low on-resistance, high power handling capability, and high durability. Furthermore, the high-voltage withstand capability required by new bipolar-CMOS-DMOS (BCD) technology for automotive applications necessitates a trade-off between the static breakdown voltage of the high-voltage transistor and the substrate injection in the edge termination region of the high-voltage transistor. This trade-off arises because a higher breakdown voltage requires reducing the doping concentration of the P-type substrate (or epitaxial layer) and / or the N-type buried layer, which in turn leads to more pronounced substrate carrier injection and latch-up issues. According to one embodiment of the present disclosure, a semiconductor device is provided, comprising a semiconductor layer, a core active region, and a termination region. The semiconductor layer has a first conductivity type. The core active region is formed in the semiconductor layer. The termination region includes a vertical path unit, a first-type deep trench termination unit, and a second-type deep trench termination unit. The vertical path unit has a second conductivity type. The vertical path unit is disposed laterally adjacent to the core active region and extends vertically from the upper surface of the semiconductor layer into the semiconductor layer to a predetermined vertical path unit depth. The second conductivity type is opposite to the first conductivity type. The first-type deep trench termination unit is disposed laterally adjacent to the vertical path unit. The first-type deep trench termination unit includes a first deep trench isolation structure and a first well region of the second conductivity type. The first well region is disposed laterally adjacent to the first deep trench isolation structure. The second-type deep trench termination unit includes a second deep trench isolation structure and a second well region of the first conductivity type. The second deep trench isolation structure is disposed laterally adjacent to the first-type deep trench termination unit, and the second well region is disposed laterally adjacent to the second deep trench isolation structure. According to another embodiment of the present disclosure, a semiconductor device is provided, comprising a semiconductor layer, a core active region, and a termination region. The semiconductor layer has a first conductivity type. The core active region is formed in the semiconductor layer. The termination region includes a vertical path unit, a plurality of first-type deep trench termination units, and a second-type deep trench termination unit. The vertical path unit has a second conductivity type. The vertical path unit is disposed laterally adjacent to the core active region and extends vertically from the upper surface of the semiconductor layer into the semiconductor layer to a predetermined vertical path unit depth. The second conductivity type is opposite to the first conductivity type. The first-type deep trench termination units are disposed adjacent to and parallel to the vertical path units. Each of the first-type deep trench termination units includes a first deep trench isolation structure and a first well region. The first well region is disposed laterally adjacent to the first deep trench isolation structure. The second-type deep trench termination unit includes a second deep trench isolation structure and a second well region of the first conductivity type. The second deep trench isolation structure is disposed laterally adjacent to the first-type deep trench termination unit farthest from the vertical path unit, and the second well region is disposed laterally adjacent to the second deep trench isolation structure. Some embodiments of the present disclosure will be described in detail below with reference to the accompanying drawings. However, it should be understood that these descriptions are merely illustrative and are not intended to limit the scope of the present disclosure. In addition, descriptions of existing structures and technologies are omitted in the following description to avoid unnecessary confusion of the concepts of the present disclosure. In the following description, some specific details, such as the specific circuit structure, component structure, manufacturing process and specific parameters of these circuits, components and processes in the embodiments, are used to provide a better understanding of the embodiments of the present disclosure. It can be understood by those with ordinary knowledge in the art that the embodiments of the present disclosure can be implemented even in the absence of some details or in combination with other methods, components, materials, etc. In the specification and claims of the present disclosure, if words such as "left, right, inside, outside, front, back, up, down, top, above, bottom, below" are used, they are only for convenience of description and do not indicate the necessary or permanent relative positions of components and / or structures. Those with ordinary knowledge in the art should understand that such words can be interchangeable under appropriate circumstances, for example, so that the embodiments of the present disclosure can still operate in an orientation different from that described in this specification. Terms such as "coupled" and "connected" described herein are defined as connecting directly or indirectly in an electrical or non-electrical manner. Terms such as "one", "the" and "these" include the plural. The term "in one embodiment" used in this document does not necessarily refer to the same embodiment, but it can also be the same embodiment. Unless otherwise specified, "or" can include the meaning of "and / or". When a field effect transistor (FET) or a bipolar junction transistor (BJT) is used as an embodiment of the transistor, the terms "gate", "source" and "drain" may include "base", "collector" and "emitter", respectively, and vice versa. In this specification, "+" and "-" are used to describe the relative concentration of the doping region, but this is not used to limit the concentration range of the doping region, nor is it used to limit the doping region in other aspects. For example, a doping region described as N+ or N- below may also be referred to as an N-type doping region, and a doping region described as P+ or P- may also be referred to as a P-type doping region. Those with ordinary knowledge in the art should understand that the above description of each term only provides some exemplary usages and is not used to limit these words. Terms such as “comprises,” “includes,” “having,” and variations thereof are intended to cover a non-exclusive inclusion such that a process, method, article, or apparatus that comprises a list of elements / components is not necessarily limited to only those elements / components but may include other elements / components not expressly listed or inherent to such process, method, article, or apparatus. Based on BCD technology, semiconductor devices such as high-voltage lateral transistors can be fabricated in or on a semiconductor layer (e.g., a semiconductor substrate) comprising an active region and a termination region. The active region typically includes at least one transistor cell having a gate, a drain region, and a source region. In one embodiment, the active region may be a core active region. The gate is used to regulate the conduction and shutdown of a channel region in the substrate to control the current flowing between the drain region and the source region. The termination region is used to isolate the active region in the semiconductor device from adjacent active regions or other devices or high-voltage transistors in the semiconductor device to block or reduce undesirable leakage paths. Furthermore, the termination region helps improve the high-voltage withstand capability (i.e., the ability to withstand a maximum drain-to-source voltage without breakdown) of the semiconductor device (e.g., a high-voltage lateral transistor). The maximum drain-to-source voltage that a semiconductor device (e.g., a high-voltage lateral transistor) can withstand is often referred to as the breakdown voltage. Embodiments of the present disclosure provide an isolation structure for a semiconductor device, which may include a deep trench isolation (DTI) structure formed in the termination region. Compared to conventional semiconductor devices that use junction (e.g., PN junction) isolation structures in the termination region, the use of a DTI structure in the isolation structure according to various embodiments of the present disclosure significantly reduces the area occupied by the termination region due to its high aspect ratio. A smaller termination region area helps preserve more area for the active region in or on the semiconductor substrate, allowing more transistor cells to be fabricated in the active region of the semiconductor device. This helps reduce the on-resistance Ron of the semiconductor device (e.g., a semiconductor transistor), or specifically, the on-resistance Ron*A (where A represents the area of ​​the active region), thereby improving the transistor's current handling capability. However, the DTI structure may be affected by the electric field concentration effect, for example, at the interface between the DTI structure and the semiconductor layer (e.g., semiconductor substrate), thereby limiting the high-voltage withstand performance of the high-voltage lateral transistor. Therefore, the disclosed embodiments further propose various isolation structures comprising a DTI structure with a smaller electric field concentration effect at the boundary between the DTI structure and the semiconductor layer to enhance the high-voltage withstand performance of the high-voltage lateral transistor. The improvement in the isolation performance and voltage withstand characteristics of the terminal region helps to improve the breakdown voltage and durability of the transistor. In addition to the above-mentioned advantageous features, the isolation structure having the DTI structure can also be used for inter-chip isolation to further reduce the inter-chip area. For ease of explanation, the present disclosure uses a lateral asymmetric transistor fabricated on or in a semiconductor substrate as an example, but this example does not limit the present disclosure. Those skilled in the art will appreciate that the structures and principles taught by the present disclosure are also applicable to other types of semiconductor materials and devices. Although the gate examples in the present disclosure are composed of polysilicon, the present disclosure is not limited to this conductive material and may also use other types of materials (e.g., metals, other semiconductors, semi-metals, and / or combinations of these materials) consistent with other aspects of the device manufacturing process. FIG1 shows a cross-sectional view of a semiconductor device 100 according to an embodiment of the present disclosure. FIG2 shows a top view of a semiconductor device 100 according to an embodiment of the present disclosure. A person skilled in the art will understand that the cross-sectional view of FIG1 and the top view of FIG2 actually only show a portion of the entire bare die of the semiconductor device 100 and can be considered as being shown in a three-dimensional coordinate system having mutually perpendicular X, Y, and Z axes. The cross-sectional view shown in FIG1 can be understood as being viewed from a cross-sectional plane that is parallel to the XY plane defined by the X and Y axes. For example, to help understand the present disclosure, the cross-sectional view of FIG1 can be understood as corresponding to the portion cut by the tangent line AA' in the top view of FIG2. However, the relationship between the cross-sectional view and the top view of the semiconductor device 100 in FIG1 and FIG2 provided above does not limit the present disclosure. In the present disclosure, the horizontal direction may refer to a direction parallel to the X-axis, and the vertical direction may refer to a direction parallel to the Y-axis. The semiconductor device 100 may be formed in or on a semiconductor layer 101 having a first conductivity type (e.g., P-type). The semiconductor layer 101 may be doped with a dopant of the first conductivity type to have a semiconductor layer doping concentration. In one embodiment, the semiconductor layer 101 may include a substrate of the semiconductor device 100. In one embodiment, the semiconductor layer 101 may include a thick epitaxial layer formed on the substrate. In one embodiment, the semiconductor layer doping concentration may be between 1e14 cm -3 to 1e20 cm -3 The semiconductor layer 101 may include one or more semiconductor materials, such as Si, Ge, SiC, SiGe, GaN, GaAs, or other forms of semiconductor substrates. According to an exemplary embodiment of the present disclosure, a semiconductor device 100 may include an active region 102 and a termination region 103. The active region 102 may include one or more lateral high-voltage (HV) transistors. Each lateral HV transistor includes at least one transistor cell 104 having a gate (e.g., gate 1043 in FIG. 1 ), a drain region (e.g., drain region 1042 in FIG. 1 ), and a source region (e.g., source region 1041 in FIG. 1 ). The gate 1043 can regulate the conduction and shutoff of a channel region in the substrate to control the current flowing between the drain region 1042 and the source region 1041. In the example of FIG. 1 , an N-channel lateral high-voltage asymmetric transistor cell 104 (e.g., an N-channel lateral double-diffused metal oxide semiconductor (DMOS) cell) is depicted to facilitate understanding of various aspects of various embodiments of the present disclosure. In one example, the high-voltage asymmetric transistor cell 104 may further include a drift region 1044 (e.g., an N-type drift region in FIG. 1 ) surrounding the drain region 1042 , with at least a portion of the drift region 1044 extending laterally below the gate 1043 . A shallow trench isolation (STI) structure 112 may be formed in the drift region 1044 . The STI 112 may have an opening at the upper surface S1 of the semiconductor layer 101 , and the STI 112 may extend vertically from the upper surface S1 of the semiconductor layer 101 into the semiconductor layer 101 at an STI depth D8 (e.g., vertically extending into the semiconductor layer 101 to an STI depth D8 ). In one example, the high-voltage asymmetric transistor cell 104 may further include a body region 1045 (e.g., a P-type body region in FIG. 1 ) surrounding the source region 1041 and a body contact region 1046 (e.g., a P+-type body contact region in FIG. 1 ). In one embodiment, the source region 1041 and the body contact region 1046 can be coupled to the source metal contact structure 113. Those skilled in the art will appreciate that this embodiment is merely illustrative and does not limit the present disclosure. Other types of transistor cells can also be formed in the active region 102. Referring to the exemplary embodiment shown in FIG. 2 , the termination region 103 may be located in a peripheral region of the semiconductor device 100 . For example, the termination region 103 surrounds the active region 102 in the XZ plane. Those skilled in the art will appreciate that, to facilitate understanding of the features of the various embodiments of the present disclosure, the top view shown in FIG. 2 may be considered as viewed from a plane coplanar with the lower surface S4 of the STI structure 112 in FIG. 1 . As shown in FIG. 2 , the termination region 103 may have a planar geometry that conforms to the active region 102 , such as the square planar geometry shown in FIG. Therefore, as shown in the XZ plane view of FIG. 2 , the termination region 103 extends to or surrounds the peripheral portion of the semiconductor device 100 and surrounds the active region 102 . In other embodiments, the active region 102 and the termination region 103 may have other planar shapes, such as a circle or a closed polygon. Referring again to FIG. 1 , the termination region 103 may include a vertical path unit 105 having the second conductivity type, a first-type deep trench termination unit 106 , and a second-type deep trench termination unit 107 . According to an exemplary embodiment of the present disclosure, vertical path elements 105 may be used to define a peripheral transition region from the active region 102 to the termination region 103. For example, when viewed from the cross-sectional view of FIG. 1 , the vertical path elements 105 may be formed or disposed directly on the periphery of the active region 102 and adjacent to the active region 102 . Furthermore, when viewed from the top view (XZ plane) of FIG. 2 , the vertical path elements 105 may diverge or extend outward from the active region 102 toward the termination region 103 . In one embodiment, the vertical path unit 105 may include a first peripheral well region 1051 having a second conductivity type (e.g., an N-type well as shown in the example of FIG. 1 ). The first peripheral well region 1051 is formed in the semiconductor layer 101. The first peripheral well region 1051 may vertically extend from the upper surface S1 of the semiconductor layer 101 to a first peripheral well predetermined depth D1 into the semiconductor layer 101 to reach and physically contact a first buried layer 1052 having the second conductivity type (e.g., an N-type buried layer as shown in the example of FIG. 1 ). For example, the first peripheral well region 1051 may reach and physically contact an upper surface S2 of the first buried layer 1052. The first buried layer 1052 may be buried in the semiconductor layer 101, and a lower surface S3 of the first buried layer 1052 may be substantially disposed at a vertical unit depth D2 relative to the upper surface S1 of the semiconductor layer 101. Accordingly, the entire vertical path unit 105 can be understood as actually forming a vertical path of the second conductivity type, which extends vertically from the upper surface S1 of the semiconductor layer 101 to the vertical unit depth D2 into the semiconductor layer 101. The first peripheral well region 1051 can be doped with a second conductivity type dopant (e.g., an N-type dopant in the exemplary embodiment of FIG. 1 ) to have a first peripheral well doping concentration c1. In one embodiment, the first peripheral well doping concentration c1 can be between 5e15 cm -3 to 1e18 cm -3 The first buried layer 1052 may be doped with a second conductivity type dopant (e.g., N-type dopant in the exemplary embodiment of FIG. 1 ) and have a first buried layer doping concentration c2. The first buried layer doping concentration c2 may be higher than the first peripheral well doping concentration c1, i.e., c2>c1. In one embodiment, the first buried layer doping concentration c2 may be 1e18 cm -3 to 1e21 cm -3 in the range. A path contact region 1053 having a second conductivity type (e.g., an N+ type contact region in the exemplary embodiment of FIG. 1 ) may be formed in the first peripheral well region 1051 at a position close to the upper surface S1 of the semiconductor layer 101. The path contact region 1053 may be doped with a second conductivity type dopant (e.g., an N-type dopant in the exemplary embodiment of FIG. 1 ) and have a path contact region doping concentration c3. The path contact region doping concentration c3 may be higher than the first peripheral well doping concentration c1, i.e., c3>c1. Therefore, the path contact region 1053 may be referred to as highly doped or heavily doped by those skilled in the art (e.g., the N+ type region in FIG. 1 ). In one embodiment, the path contact region doping concentration c3 may be 1e18 cm -3 to 1e21 cm -3 in the range. According to an exemplary embodiment of the present disclosure, the first-type deep trench termination cell 106 can be used to improve the electric field distribution (e.g., reduce the electric field density) at the boundary between the vertical path cell 105 and the first-type deep trench termination cell 106, thereby advantageously helping to increase the breakdown voltage of the semiconductor device 100. In one embodiment, when viewed from the cross-sectional view of FIG. 1 , the first-type deep trench termination cell 106 can be formed immediately adjacent to the vertical path cell 105, and when viewed from the top view (XZ plane view) of FIG. 2 , the first-type deep trench termination cell 106 can be located outside the vertical path cell 105 and surround or enclose the vertical path cell 105. Therefore, when viewed from the top view of FIG. 2 , the first-type deep trench termination cell 106 extends or wraps around the periphery of the vertical path cell 105 to enclose the vertical path cell 105, and the first-type deep trench termination cell 106 can have a planar geometry that is conformal to the vertical path cell 105. In one embodiment, the first-type deep trench termination unit 106 may include a first deep trench isolation structure 1061 (hereinafter referred to as a first DTI structure 1061) and a first well region 1063. When viewed from the cross-sectional view of FIG. 1 , the first DTI structure 1061 may be formed or disposed laterally (e.g., in the X-axis direction) adjacent to the vertical path unit 105. When viewed from the top view (XZ plane view) of FIG. 2 , the first DTI structure 1061 may surround or enclose the vertical path unit 105 to separate the first well region 1063 from the vertical path unit 105. For example, the first DTI structure 1061 may include a first deep trench 1062, which may be completely filled with an insulating material (e.g., silicon dioxide). The first deep trench 1062 may have a deep trench bottom and deep trench sidewalls. In another exemplary embodiment, a thin insulator (e.g., silicon dioxide) liner layer may first cover the deep trench bottom and deep trench sidewalls of the first deep trench 1062, and then a conductive filler (e.g., polysilicon) may be disposed on the insulator liner layer to fill the first deep trench 1062, thereby forming the first DTI structure 1061. The opening of the first deep trench 1062 may be at the upper surface S1 of the semiconductor layer 101. The first deep trench 1062 may extend vertically into the semiconductor layer 101 to a first deep trench depth D3, where the first deep trench depth D3 is greater than the vertical path unit depth D2, i.e., D3>D2. In one embodiment, the minimum depth of the first deep trench depth D3 can be designed or set to ensure that when a voltage is applied or coupled to the vertical path unit 105, the bottom edge of the vertical depletion region between the first buried layer 1052 and the semiconductor layer 101 does not reach or exceed the deep trench bottom of the first deep trench 1062. In other words, the minimum depth of the first deep trench depth D3 should be greater than the maximum depth to which the bottom edge of the vertical depletion region between the first buried layer 1052 and the semiconductor layer 101 can extend when a voltage is applied or coupled to the vertical path unit 105. In one exemplary embodiment, the first deep trench depth D3 can further depend on the first doping concentration of the semiconductor layer 101 and the voltage handling capability of the high-voltage asymmetric transistor unit 104 (i.e., the breakdown voltage of the transistor unit 104). For example, in one example, the first deep trench depth D3 is 2-4 times the vertical path unit depth D2. In another example, the vertical path unit depth D2 can be in the range of 3 µm to 10 µm, and the first deep trench depth D3 can be in the range of 6 µm to 40 µm. Laterally (i.e., viewed from the X-axis), the first deep trench 1062 and the first DTI structure 1061 can be located adjacent to the first peripheral well region 1051 and the first buried layer 1052. In one exemplary embodiment, the first well region 1063 may have a second conductivity type (e.g., an N-type well in the example shown in FIG. 1 ) and may be used to maintain a high electric field (e.g., breakdown voltage) within the semiconductor device 100 . In one embodiment, the first well region 1063 may extend vertically from the upper surface S1 of the semiconductor layer 101 into the semiconductor layer 101 at a first predetermined well depth D4. In one embodiment, the first predetermined well depth D4 may be less than (or shallower than) the first trench depth D3, i.e., D4 < D3. In one embodiment, the first predetermined well depth D4 may be further less than (or shallower than) the vertical path unit depth D2, i.e., D4 < D2. In one embodiment, the first well region 1063 may be doped with a second conductivity type dopant (e.g., an N-type dopant in the example shown in FIG. 1 ) to have a first well doping concentration c4. In one embodiment, the first well region 1063 can be formed in the same manufacturing process as the first peripheral well region 1051 to save costs. Therefore, in this case, the first well doping concentration c4 can be substantially the same as the first peripheral well doping concentration c1. However, those skilled in the art will understand that this embodiment is merely illustrative and does not limit the present disclosure. In alternative embodiments, the first well region 1063 can be formed in a different manufacturing process from the first peripheral well region 1051. For example, in an alternative embodiment, the first well region 1063 can be formed in the same manufacturing process as the drift region 1044 of the transistor cell 104 to save costs. Therefore, in this case, the first well doping concentration c4 can be substantially the same as the drift region doping concentration c0 of the drift region 1044. The drift region doping concentration c0 can be less than the first peripheral well doping concentration c1, i.e., c0 < c1. Laterally, the first well region 1063 can be disposed directly outside and adjacent to the first DTI structure 1061, and have the predetermined first well width W4 shown in FIG. When viewed from the top view (XZ plane view) of Figure 2, one skilled in the art will appreciate that the first well region 1063 may extend, surround, or enclose the periphery of the first DTI structure 1061, and radiate or extend outward from the first DTI structure 1061 with a first well predetermined width W4. A first well contact region 1064 having a second conductivity type (e.g., an N+ type contact region in the exemplary embodiment of FIG. 1 ) may be formed in the first well region 1063 near the upper surface S1 of the semiconductor layer 101. The first well contact region 1064 may be doped with a second conductivity type dopant (e.g., an N-type dopant in the exemplary embodiment of FIG. 1 ) to have a first well contact region doping concentration c5. The first well contact region doping concentration c5 may be higher than the first well doping concentration c4, i.e., c5>c4. Therefore, the first well contact region 1064 may be referred to as highly doped or heavily doped by those skilled in the art (e.g., the N+ type region in FIG. 1 ). In one embodiment, the first well contact region doping concentration c5 may be between 1e19 cm -3 to 1e21 cm -3 In one embodiment, the first well contact region 1064 can be formed in the same manufacturing process as the path contact region 1053 to save costs. In this case, the doping concentration c5 of the first well contact region can be substantially the same as the doping concentration c3 of the path contact region. However, those skilled in the art will understand that this embodiment is merely illustrative and does not limit the present disclosure. In alternative embodiments, the first well contact region 1064 can be formed in a different manufacturing process than the path contact region 1053. According to an exemplary embodiment of the present disclosure, the vertical path unit 105 and the first well region 1063 of the first-type deep trench termination unit 106 can be electrically coupled together via a path unit metal contact structure 108. For example, the path unit metal contact structure 108 can be formed on an interlayer dielectric layer (IDL) 114, which can be disposed on the upper surface S1 of the semiconductor layer 101. Interlayer vias 1054 and 1065 filled with a conductive material (e.g., metal) can be formed in the IDL 114 to respectively couple the vertical path unit 105 and the first well region 1063 to the path unit contact structure 108. In one embodiment, the vertical path unit 105 and the first well region 1063 can be further electrically coupled to the drain region 1042 of the lateral high-voltage transistor in the active region 102 via, for example, the connection trace 110 shown in FIG. 1 . Connecting trace 110 couples routing unit metal contact structure 108 to drain metal contact structure 109, which in turn couples drain region 1042. In practical applications, vertical routing unit 105 is typically coupled to a positive voltage (e.g., the drain voltage applied to drain region 1042 of a high-voltage N-channel lateral transistor in active region 102) to prevent forward conduction of any PN junction in termination region 103, thereby preventing carrier injection into active region 102. According to an exemplary embodiment of the present disclosure, the second-type deep trench termination unit 107 can be used to provide a continuous path of the first conductivity type, so as to enable the semiconductor layer 101 or allow the semiconductor layer 101 to be biased to, for example, a ground potential in practical applications, and reduce carrier injection into the active region 102. In one embodiment, when viewed from the cross-sectional view of FIG. 1 , the second-type deep trench termination unit 107 can be formed adjacent to the first-type deep trench termination unit 106, and when viewed from the top view (XZ plane view) of FIG. 2 , the second-type deep trench termination unit 107 can be located outside the first-type deep trench termination unit 106 and surround or enclose the first-type deep trench termination unit 106. Therefore, when viewed from the XZ plane of Figure 2, the second type deep trench terminal unit 107 extends to or surrounds the periphery of the first type deep trench terminal unit 106 to surround the first type deep trench terminal unit 106, and the second type deep trench terminal unit 107 can have a planar geometry that is conformal to the first type deep trench terminal unit 106. In one embodiment, the second-type deep trench termination cell 107 may include a second deep trench isolation structure 1071 (hereinafter referred to as the second DTI structure 1071) and a second well region 1073. When viewed from the cross-sectional view of FIG. 1 , the second DTI structure 1071 may be formed or disposed laterally (e.g., in the X-axis direction) adjacent to the first-type deep trench termination cell 106. When viewed from the top view (XZ plane view) of FIG. 2 , the second DTI structure 1071 may be located outside the first-type deep trench termination cell 106 and surround or enclose the first-type deep trench termination cell 106 to isolate the second well region 1073 from the first-type deep trench termination cell 106. For example, in one exemplary embodiment, the second DTI structure 1071 may include a second deep trench 1072, which may be completely filled with an insulating material (e.g., silicon dioxide). The second deep trench 1072 may have a deep trench bottom and deep trench sidewalls. In another exemplary embodiment, a thin insulator (e.g., silicon dioxide) liner layer may first cover the deep trench bottom and deep trench sidewalls of the second deep trench 1072, and then a conductive filler (e.g., polysilicon) may be disposed on the insulator liner layer and fill the second deep trench 1072 to form the second DTI structure 1071. The second deep trench 1072 may have an opening at the upper surface S1 of the semiconductor layer 101 and may extend vertically into the semiconductor layer 101 to a second deep trench depth D5, where the second deep trench depth D5 is greater than the vertical path unit depth D2, i.e., D5>D2. In one example, the second deep trench depth D5 is two to four times the vertical path unit depth D2. For example, the vertical path unit depth D2 can be in the range of 3 μm to 10 μm, while the second deep trench depth D5 can be in the range of 6 μm to 40 μm. In one embodiment, the second deep trench 1072 can be formed in the same manufacturing process as the first deep trench 1062 to save costs. In this case, the second deep trench depth D5 can be substantially the same as the first deep trench depth D3. However, those skilled in the art should understand that this embodiment is merely illustrative and does not limit the present disclosure. In other alternative embodiments, the second deep trench depth D5 is different from the first deep trench depth D3. From a lateral perspective (i.e., viewed from the X-axis direction), the second deep trench 1072 and the second DTI structure 1071 can be located adjacent to the first well region 1063. In one exemplary embodiment, the second well region 1073 may have a first conductivity type (e.g., a P-type well in the example shown in FIG. 1 ). In one embodiment, the second well region 1073 may extend vertically from the upper surface S1 of the semiconductor layer 101 into the semiconductor layer 101 at a second predetermined well depth D6. In one embodiment, the second predetermined well depth D6 may be less than (or shallower than) the second deep trench depth D5, i.e., D6 < D5. In one embodiment, the second predetermined well depth D6 may be further less than (or shallower than) the vertical path unit depth D2, i.e., D6 < D2. In one embodiment, the second well region 1073 may be doped with a first conductivity type dopant (e.g., a P-type dopant in the example shown in FIG. 1 ) to have a second well doping concentration c6. Laterally, the second well region 1073 may be disposed directly outside and adjacent to the second DTI structure 1071 and have a second predetermined well width W5 shown in FIG. 1 . When viewed from the top view (XZ plane view) of Figure 2, a person skilled in the art will understand that the second well region 1073 can extend, surround or enclose the periphery of the second DTI structure 1071, and diverge or extend outward from the second DTI structure 1071 with a second predetermined well width W5. A second well contact region 1074 having a first conductivity type (e.g., a P+ type contact region in the exemplary embodiment of FIG. 1 ) may be formed in the second well region 1073 at a position close to the upper surface S1 of the semiconductor layer 101. The second well contact region 1074 may be doped with a dopant of the first conductivity type (e.g., a P-type dopant in the exemplary embodiment of FIG. 1 ) and have a second well contact region doping concentration c7. The second well contact region doping concentration c7 may be higher than the second well doping concentration c6, i.e., c7>c6. Therefore, the second well contact region 1074 may be referred to as highly doped or heavily doped by those skilled in the art (e.g., the P+ type region in FIG. 1 ). In one embodiment, the second well contact region doping concentration c7 may be 1e19 cm -3 to 1e21 cm -3 In this case, when the second well region 1073 and the second well contact region 1074 are considered as a whole, a vertical path of the first conductivity type is formed, which vertically extends from the upper surface S1 of the semiconductor layer 101 to the second well depth D6 into the semiconductor layer 101. According to an exemplary embodiment of the present disclosure, the second-type deep trench termination cell 107 may further include a second buried layer 1075 having a first conductivity type (e.g., the P-type buried layer shown in the example of FIG. 1 ). The second buried layer 1075 may be buried in the semiconductor layer 101 below the second well region 1073 . The lower surface S5 of the second buried layer 1075 may be substantially disposed at a predetermined buried depth D7 relative to the upper surface S1 of the semiconductor layer 101 . In this case, the second well region 1073 may extend vertically from the upper surface S1 of the semiconductor layer 101 into the semiconductor layer 101 to reach and physically contact the second buried layer 1075 . For example, the second well region 1073 may reach and physically contact the upper surface S4 of the second buried layer 1075 . In one embodiment, the predetermined buried depth D7 may be less than (or shallower than) the second deep trench depth D5 , i.e., D7 < D5 . The second buried layer 1075 may be doped with a first conductivity type dopant (e.g., a P-type dopant in the exemplary embodiment of FIG. 1 ) to have a second buried layer doping concentration c8. The second buried layer doping concentration c8 may be higher than the second well doping concentration c6, i.e., c8>c6. In one embodiment, the second buried layer doping concentration c8 may be 1e18 cm -3 to 1e21 cm -3 The second buried layer 1075 can advantageously help reduce the parasitic collector resistance of the PNP parasitic bipolar transistor formed between the lateral high-voltage transistor unit 104 and the second well contact region 1074. In this case, when the second well region 1073, the second well contact region 1074, and the second buried layer 1075 are considered as a whole, they form a vertical path of the first conductivity type, which extends from the upper surface S1 of the semiconductor layer 101 to a predetermined buried depth D7 into the semiconductor layer 101. According to an exemplary embodiment of the present disclosure, the second well region 1073, the second well contact region 1074, and the second buried layer 1075 (if the second buried layer 1075 is formed) can be electrically coupled to the ground potential GND via the second well metal contact structure 111. In this way, in actual applications, the semiconductor layer 101 can be biased to the ground potential GND to prevent carrier injection into the active region 102. According to an exemplary embodiment of the present disclosure, contact regions such as the via contact region 1053 , the first well contact region 1064 , and the second well contact region 1074 may be separated by a shallow trench isolation structure 112 having a DTI depth D8 . The semiconductor device 100 described above with reference to FIG. 1 can have an enhanced breakdown voltage and a substantially diagonally stepped equipotential distribution within the first-type deep trench termination cell 106. The semiconductor device 100 can further have enhanced substrate noise immunity (i.e., resistance to carrier injection from the semiconductor layer 101 into the active region 102) and latch-up immunity, and can have a smaller termination region 103 size. FIG3 illustrates a cross-sectional view of a semiconductor device 200 according to an embodiment of the present disclosure. For simplicity of description, elements, components, or structures having substantially the same functions in semiconductor devices 100 and 200 are designated with the same reference numerals. Those skilled in the art will appreciate that semiconductor device 200 may be considered a variation of semiconductor device 100. Those skilled in the art will appreciate that the descriptions of various embodiments of semiconductor device 100 described above with reference to FIG3 are also applicable to the example semiconductor device 200 in FIG3. The primary difference between semiconductor device 200 and semiconductor device 100 is that when a voltage is applied or coupled to the first well region 1063 of the first-type deep trench termination cell 106 of semiconductor device 200, the first well region 1063 may have a gradient or graded voltage or potential profile to ensure a more uniform electric field distribution and better voltage withstand capability in the termination region 103. For example, voltage VD may be applied or coupled to the first well region 1063 via the path cell metal contact structure 108 and the first well contact region 1064. In the example of FIG. 3 , the first well region 1063 of the semiconductor device 200 may include a plurality of second conductivity type doped regions, each of which has a regional doping concentration, a regional width, and a regional depth relative to the upper surface S1 of the semiconductor layer 101. A person skilled in the art will appreciate that, when viewed from a top view (e.g., an XZ plane view) perpendicular to a vertical direction (e.g., a Y-axis direction), the second conductivity type doped regions may be arranged in a ring-like manner, one surrounding another. For example, FIG. 3 illustrates two second conductivity type doped regions 201 and 202 to facilitate understanding of the embodiment. In one exemplary embodiment, the second conductivity type doped regions have a gradually decreasing regional doping concentration, starting from the second conductivity type doped region immediately adjacent to the first DTI structure 1061 to the second conductivity type doped region furthest from the first DTI structure 1061. For example, in FIG. 3 , the doping region 202 located farther from the first DTI structure 1061 may have a regional doping concentration c42, while the doping region 201 located closer to the first DTI structure 1061 may have a regional doping concentration c41, with c42 being less than c41, i.e., c42 < c41. In one exemplary embodiment, the regional doping concentration c41 of the doping region 201 may be the same as the first peripheral well doping concentration c1 of the first peripheral well region 1051, i.e., c41 = c1; and the regional doping concentration c42 of the doping region 202 may be the same as the drift region doping concentration c0 of the drift region 1044 of the transistor cell 104, i.e., c42 = c0. In this case, the doping region 201 and the first peripheral well region 1051 may be formed in the same implantation process using the same implantation mask. The doping region 202 and the drift region 1044 of the transistor cell 104 may be formed in the same implantation process using the same implantation mask.In this way, no additional mask is required during the manufacturing process to form the doped regions 201 and 202. Those skilled in the art will appreciate that the number of the second conductivity type doped regions, their respective regional doping concentrations, widths, and depths can be adjusted to optimize the performance of the high-voltage semiconductor device 200. As another example, FIG. 4 illustrates a cross-sectional view of a semiconductor device 300 according to an embodiment of the present disclosure. Those skilled in the art will appreciate that semiconductor device 300 can be considered a variation of semiconductor device 200. Those skilled in the art will appreciate that the descriptions of various embodiments of semiconductor devices 100 and 200 described above with reference to FIGs. 1-3 are applicable to the semiconductor device 300 illustrated in FIG. A primary difference between semiconductor device 300 and semiconductor device 200 is that the first well region 1063 of semiconductor device 300 is illustratively illustrated as including three second conductivity type doped regions 301, 302, and 303. Within the second conductivity type doped regions 301, 302, and 303, the second conductivity type doped regions 301, 302, and 303 have a decreasing regional doping concentration, moving from the second conductivity type doped region immediately adjacent to the first DTI structure 1061 to the second conductivity type doped region furthest from the first DTI structure 1061. In other words, the doping region 303 located farthest from the first DTI structure 1061 may have a regional doping concentration c43, the doping region 302 located closer to the first DTI structure 1061 than the doping region 303 may have a regional doping concentration c42, and the doping region 301 located closest to the first DTI structure 1061 may have a regional doping concentration c41, and c43 is less than c42, and c42 is less than c41, that is, c43<c42<c41. Two more examples are provided below. FIG. 5 illustrates a cross-sectional view of a semiconductor device 400 according to another alternative embodiment of the present disclosure. FIG. 6 illustrates a cross-sectional view of a semiconductor device 500 according to yet another alternative embodiment of the present disclosure. To simplify the description, elements, components, or structures having substantially the same functions in semiconductor devices 100, 200, 300, 400, and 500 will be designated by the same reference numerals. A person having ordinary skill in the art will understand that semiconductor device 400 may be considered a variation of semiconductor device 200, and semiconductor device 500 may be considered a variation of semiconductor device 300. Therefore, the above description of the various embodiments of semiconductor devices 100, 200, and 300 with reference to FIG. 1 to FIG. 4 may apply to semiconductor devices 400 and 500. The primary difference between semiconductor devices 400 and 500 and semiconductor devices 200 and 300 is that, in the second conductivity type doped regions of the first well region 1063 of semiconductor devices 400 and 500, the second conductivity type doped regions sequentially have decreasing regional depths from the second conductivity type doped region immediately adjacent to the first DTI structure 1061 to the second conductivity type doped region furthest from the first DTI structure 1061. In this case, in one embodiment, the second conductivity type doped regions of the first well region 1063 may have the same regional doping concentration. In an alternative embodiment, the second conductivity type doped regions of the first well region 1063 sequentially have decreasing regional doping concentrations from the second conductivity type doped region immediately adjacent to the first DTI structure 1061 to the second conductivity type doped region furthest from the first DTI structure 1061. For example, the example in FIG. 5 illustratively illustrates that the first well region 1063 of the semiconductor device 400 includes two second conductivity type doped regions 401 and 402. The second conductivity type doped region 402 located farther from the first DTI structure 1061 may have a regional depth D42, while the second conductivity type doped region 401 located closer to the first DTI structure 1061 may have a regional depth D41. The regional depth D42 is less than (or shallower than) the regional depth D41, i.e., D42 < D41. In this case, the second conductivity type doped region 402 located farther from the first DTI structure 1061 may have a regional doping concentration c42, while the second conductivity type doped region 401 located closer to the first DTI structure 1061 may have a regional doping concentration c41. Furthermore, c42 may be less than or equal to c41, i.e., c42 ≤ c41. FIG6 exemplifies another example in which the first well region 1063 of the semiconductor device 500 includes three second conductivity type doped regions 501, 502, and 503. The doped region 503 located farthest from the first DTI structure 1061 may have a regional depth D43, the doped region 502 located closer to the first DTI structure 1061 than the doped region 503 may have a regional depth D42, and the doped region 501 located closest to the first DTI structure 1061 may have a regional depth D41. The regional depth D43 is less than the regional depth D42, and the regional depth D42 is less than the regional depth D41, i.e., D43 < D42 < D41. In this case, the doping region 503 located farthest from the first DTI structure 1061 may have a regional doping concentration c43, the doping region 502 located closer to the first DTI structure 1061 than the doping region 503 may have a regional doping concentration c42, and the doping region 501 located closest to the first DTI structure 1061 may have a regional doping concentration c41. The regional doping concentration c43 may be less than or equal to the regional doping concentration c42, and the regional doping concentration c42 may be less than or equal to the regional doping concentration c41, that is, c43≤c42≤c41. In the semiconductor devices 200, 300, 400, and 500 described in the aforementioned exemplary embodiments, when a voltage is applied or coupled to the first well region 1063 of the first-type deep trench termination cell 106 via, for example, the routing cell metal contact structure 108 and the first well contact region 1064, the first well region 1063 may have a gradient or graded voltage or potential distribution curve. Therefore, when a voltage is applied to the routing cell metal contact structure 108 (and the vertical routing cell 105 and the first well region 1063), the first well region 1063 may advantageously help generate a more uniform electric field distribution in the vertical routing cell 105 and the first-type deep trench termination cell 106, thereby preventing the formation of high electric field locations (or electric field-intensive locations) in the vertical routing cell 105 and the first-type deep trench termination cell 106. For example, the first well region 1063 can particularly help alleviate or reduce the electric field concentration effect at or near the boundary between the vertical path cell 105 and the first-type deep trench termination cell 106 (i.e., at or near the boundary between the first DTI structure 1061 and the first peripheral well region 1051 and / or the first buried layer 1052, which can also be referred to as the boundary between the first DTI structure 1061 and the semiconductor layer 101). Therefore, according to various embodiments of the present disclosure, the high-voltage withstand performance of the isolation structure including the DTI structure (e.g., the first DTI structure 1061 and the second DTI structure 1071) in the termination region 103 of the semiconductor devices 200, 300, 400, and 500 can be improved, so that the semiconductor devices 200, 300, 400, and 500 can have a further increased breakdown voltage. According to an exemplary embodiment of the present disclosure, still referring to the exemplary cross-sectional views of Figures 1 and 3-6 , the routing cell metal contact structure 108 may extend laterally to cover a substantial portion of the first well region 1063, or more specifically, to cover a substantial portion of the IDL 144 overlying the first well region 1063. In this case, the routing cell metal contact structure 108 may function as or be used as a field effect plate to advantageously assist in capacitively depleting the first well region 1063. The routing cell metal contact structure (or field effect plate) 108 may further help improve the uniformity of the electric field distribution across (or within) the vertical routing cell 105 and the first-type deep trench termination cell 106, thereby preventing high electric field locations from forming within the vertical routing cell 105 and the first-type deep trench termination cell 106, thereby further improving the breakdown voltage of the semiconductor devices 100-500. FIG7 illustrates a cross-sectional view of a semiconductor device 600 according to an embodiment of the present disclosure. To simplify the description, elements, components, or structures having substantially the same functions in semiconductor devices 100, 200, 400, and 600 are designated by the same reference numerals. A person skilled in the art will appreciate that semiconductor device 600 may be considered a variation of semiconductor device 400. Therefore, the above descriptions of various embodiments of semiconductor devices 100, 200, and 400 with reference to FIG1 to FIG5 are applicable to semiconductor device 600. The main difference between semiconductor device 600 and semiconductor device 400 is that a first well metal contact structure 115 separated from the path unit metal contact structure 108 may be formed above the first well region 1063, and a ballast resistor 601 may be coupled between the first well metal contact structure 115 and the path unit metal contact structure 108. In this case, the first well region 1063 of the first type deep trench termination unit 106 can be electrically coupled to the first well metal contact structure 115 through, for example, the first well contact region 1064 and the interlayer via 1065. Based on the ballast resistor 601 coupled between the first well metal contact structure 115 and the routing unit metal contact structure 108, when a voltage (e.g., voltage VD) is applied to the routing unit metal contact structure 108, the voltage drop V across the ballast resistor 601 is 601 A voltage drop (potential reduction) can be created between the vertical path cell 105 and the first-type deep trench termination cell 106. Consequently, the voltage applied to the first-type deep trench termination cell 106 is reduced compared to the voltage applied to the vertical path cell 105. In this way, the high-voltage withstand capability (or breakdown voltage) of the semiconductor device 600 can be further improved. Those skilled in the art will appreciate that the variations described herein with reference to FIG. 7 regarding the semiconductor device 600 (which may be a variation of the semiconductor device 400) are also applicable to the semiconductor devices 100, 200, 300, and 500. According to other alternative embodiments of the present disclosure, those skilled in the art will appreciate that the following disclosure includes a semiconductor device having a termination region with a plurality (or more than one) of first-type deep trench termination cells 106. The plurality of first-type deep trench termination cells 106 may be laterally disposed between the vertical path cells 105 and the second-type deep trench termination cells 107. Each first-type deep trench termination cell 106 may include or have the same elements, components, or structures as the first-type deep trench termination cells 106 of the semiconductor devices 100-600 in Figures 1-6. For example, FIG. 8 illustrates a cross-sectional view of a semiconductor device 700 according to yet another alternative embodiment of the present disclosure. Semiconductor device 700 is illustratively illustrated as including two first-type deep trench termination units 106, which are laterally disposed between vertical path units 105 and second-type deep trench termination units 107. Those skilled in the art will appreciate that semiconductor device 700 can be considered a variation of semiconductor device 600. For simplicity of description, elements, components, or structures having substantially the same functions in semiconductor devices 100, 200, 400, 600, and 700 are designated with the same reference numerals. Therefore, the descriptions of the various embodiments of semiconductor devices 100, 200, 400, and 600 described above with reference to FIGs. 1-3, 5, and 7 are applicable to the semiconductor device 700 illustrated in FIG. 8. The main difference between the semiconductor device 700 and the semiconductor device 600 is that the termination region 103 of the semiconductor device 700 in FIG. 8 may include more than one first-type deep trench termination unit 106 . For example, FIG. 8 illustratively illustrates two first-type deep trench termination cells 106 disposed laterally between a vertical path cell 105 and a second-type deep trench termination cell 107. In this example, each of the two first-type deep trench termination cells 106 is illustratively depicted as being identical to the first-type deep trench termination cell 106 of the semiconductor device 600 in FIG. 7 . However, in another embodiment, the two first-type deep trench termination cells 106 may have different structures. For example, one first-type deep trench termination cell 106 may have the same structure as the first-type deep trench termination cell 106 of the semiconductor device 600 in FIG. 7 , while the other first-type deep trench termination cell 106 may have the same structure as the first-type deep trench termination cell 106 of the semiconductor devices 100 - 500 in FIGs. 1 - 6 . Those skilled in the art will appreciate that these examples do not limit the present disclosure. The number of first-type deep trench termination cells 106 included in the termination region 103 is not limited to one or two, and each of these first-type deep trench termination cells 106 may have the same structure as the first-type deep trench termination cells 106 of any of the semiconductor devices 100 to 600 in Figures 1 to 7. The beneficial effects of the various embodiments and their variations of the present disclosure should not be considered limited to those described in the above descriptions of the various embodiments. Other beneficial effects of the various embodiments of the present disclosure that are not described herein may be better understood by reading the detailed description of the present disclosure and studying the accompanying drawings of the various embodiments. The above description and embodiments of the present invention are provided for illustrative purposes only and are not intended to limit the scope of the present invention. Variations and modifications to the disclosed embodiments are possible, and other feasible alternative embodiments and equivalent variations of the elements in the embodiments will be apparent to those skilled in the art. Accordingly, variations and modifications to the disclosed embodiments do not exceed the spirit and scope of the present invention. 100: semiconductor device 101: semiconductor layer 102: active region 103: terminal region 104: transistor unit 105: vertical path unit 106: first type deep trench terminal unit 107: second type deep trench terminal unit 108: path unit metal contact structure 109: drain metal contact structure 110: connecting trace 111: second well metal contact structure 112: shallow trench isolation structure 113: source metal contact structure 114: interlayer dielectric layer 1041: source region 1042: drain region 1043: gate 1044: drift region 1045: base region 1046: base contact region 1051: first peripheral well region 1052: first buried layer 1053: path contact region 1054: interlayer via 1061: first deep trench isolation structure 1062: first deep trench 1063: first well region 1064: first First well contact area 1065: interlayer via 1071: second deep trench isolation structure 1072: second deep trench 1073: second well area 1074: second well contact area 1075: second buried layer c0, c1, c2, c3, c4, c5, c6, c7, c8: concentration D1, D2, D3, D4, D5, D6, D7, D8: depth S1, S2, S3, S4, S5: surface W4, W 5: Width GND: Ground potential VD: Voltage 200, 300, 400, 500, 600, 700: Semiconductor elements 201, 202, 301, 302, 303, 401, 402, 501, 502, 503: Second conductivity type doped regions c41, c42, c43: Concentrations D41, D42, D43: Depth 115: First well metal contact structure 601: Ballast resistor V 601 :Pressure Drop To better understand the embodiments of the present disclosure, the present disclosure will be described in detail with reference to the following figures. Identical elements are labeled identically. The following figures are for illustrative purposes only and may depict only a portion of a device and are not necessarily drawn to scale. [FIG. 1] illustrates a cross-sectional view of a semiconductor device 100 according to an embodiment of the present disclosure. [FIG. 2] illustrates a top view of a semiconductor device 100 according to an embodiment of the present disclosure. [FIG. 3] illustrates a cross-sectional view of a semiconductor device 200 according to an embodiment of the present disclosure. [FIG. 4] illustrates a cross-sectional view of a semiconductor device 300 according to an embodiment of the present disclosure. [FIG. 5] illustrates a cross-sectional view of a semiconductor device 400 according to an embodiment of the present disclosure. [FIG. 6] illustrates a cross-sectional view of a semiconductor device 500 according to an embodiment of the present disclosure. [FIG. 7] illustrates a cross-sectional view of a semiconductor device 600 according to an embodiment of the present disclosure. [FIG. 8] illustrates a cross-sectional view of a semiconductor device 700 according to an embodiment of the present disclosure. 100:Semiconductor components 101: Semiconductor layer 102: Active Zone 103: Terminal Area 104: Transistor unit 105: Vertical path unit 106: First type deep trench terminal unit 107: Second type deep trench terminal unit 108: Path unit metal contact structure 109: Drain metal contact structure 110: Connection wiring 111: Second well metal contact structure 112: Shallow trench isolation structure 113: Source metal contact structure 114: interlayer dielectric layer 1041: Source region 1042: Drain area 1043: Gate 1044:Drift Zone 1045:Matrix area 1046: substrate contact area 1051: First peripheral well area 1052: first buried layer 1053: Path contact area 1054:Interlayer via 1061: first deep trench isolation structure 1062: first deep trench 1063: First Well Area 1064: First well contact area 1065:Interlayer via 1071: Second deep trench isolation structure 1072: Second deep groove 1073: Second Well Area 1074: Second well contact area 1075: Second buried layer c0,c1,c2,c3,c4,c5,c6,c7,c8: concentration D1,D2,D3,D4,D5,D6,D7,D8: Depth S1, S2, S3, S4, S5: surface W4, W5: width GND: Ground potential VD: voltage

Claims

1. A semiconductor element, comprising: A semiconductor layer having a first conductivity type; A vertical path unit having a second conductivity type and extending vertically from an upper surface of the semiconductor layer to a predetermined vertical path unit depth in the semiconductor layer, the second conductivity type being opposite to the first conductivity type; a first type deep trench termination unit laterally disposed adjacent to the vertical path unit, the first type deep trench termination unit including a first deep trench isolation structure and a first well region having the second conductivity type, wherein the first well region is laterally disposed adjacent to the first deep trench isolation structure; and a second type deep trench termination unit including a second deep trench isolation structure and a second well region having the first conductivity type, wherein the second deep trench isolation structure is laterally disposed adjacent to the first type deep trench termination unit, and the second well region is laterally disposed adjacent to the second deep trench isolation structure.

2. The semiconductor device as described in claim 1, wherein, When viewed from a plane parallel to the upper surface of the semiconductor layer, the vertical path cell has a closed planar geometry.

3. The semiconductor device as claimed in claim 1, wherein the first deep trench isolation structure is disposed in a first deep trench, an opening of the first deep trench is on the upper surface of the semiconductor layer, the first deep trench extends vertically into the semiconductor layer to a predetermined first deep trench depth, the first deep trench depth being greater than the vertical path cell depth.

4. The semiconductor element as claimed in claim 3, wherein the depth of the first deep trench is 2 to 4 times the depth of the vertical path cell.

5. The semiconductor device as described in claim 1, wherein, When viewed from a plane parallel to the upper surface of the semiconductor layer, the first deep trench isolation structure surrounds the vertical path cell.

6. The semiconductor element as claimed in claim 1, wherein the first well region extends vertically from the upper surface of the semiconductor layer to a predetermined first well depth in the semiconductor layer, the predetermined first well depth being less than the vertical path cell depth.

7. The semiconductor device as claimed in claim 1, wherein the second deep trench isolation structure is disposed in a second deep trench, an opening of the second deep trench is on the upper surface of the semiconductor layer, the second deep trench extends vertically into the semiconductor layer to a predetermined second deep trench depth, the second deep trench depth being greater than the vertical path cell depth.

8. The semiconductor element as claimed in claim 7, wherein the depth of the second deep trench is 2 to 4 times the depth of the vertical path cell.

9. The semiconductor element as claimed in claim 7, wherein the second well region extends vertically from the upper surface of the semiconductor layer to a predetermined second well depth in the semiconductor layer, the predetermined second well depth being less than the second deep trench depth.

10. The semiconductor device as claimed in claim 1, wherein, When viewed from a plane parallel to the upper surface of the semiconductor layer, the second deep trench isolation structure surrounds the first type of deep trench terminal unit.

11. The semiconductor element as claimed in claim 1, wherein the vertical path unit comprises: A first embedded layer having the second conductivity type and embedded in the semiconductor layer, wherein a lower surface of the first embedded layer is substantially disposed at the vertical cell depth; a first peripheral well region having the second conductivity type and formed in the semiconductor layer, wherein the first peripheral well region extends vertically downward from the upper surface of the semiconductor layer into the semiconductor layer to reach and physically contact the first embedded layer; and a path contact region having the second conductivity type and formed in the first peripheral well region at a position close to the upper surface of the semiconductor layer.

12. The semiconductor device as claimed in claim 1, wherein when a voltage is applied to or coupled to the first well region, the first well region has a gradually changing voltage or potential distribution curve.

13. The semiconductor device as claimed in claim 1, wherein the first well region includes a plurality of second conductivity type doped regions, wherein among the second conductivity type doped regions, from the second conductivity type doped region immediately adjacent to the first deep trench isolation structure to the second conductivity type doped region furthest from the first deep trench isolation structure, the second conductivity type doped regions sequentially have a region doping concentration that gradually decreases in this direction.

14. The semiconductor device as claimed in claim 1, wherein the first well region includes a plurality of second conductivity type doped regions, wherein each of the second conductivity type doped regions has a region depth relative to the upper surface of the semiconductor layer, and wherein the second conductivity type doped regions have progressively smaller region depths from the second conductivity type doped region immediately adjacent to the first deep trench isolation structure to the second conductivity type doped region furthest from the first deep trench isolation structure.

15. The semiconductor element as claimed in claim 1, wherein the second type of deep trench termination unit further comprises: A second well contact region having the first conductivity type is formed in the second well region at a position close to the upper surface of the semiconductor layer.

16. The semiconductor element as claimed in claim 1, wherein the second type of deep trench termination unit further comprises: A second embedded layer having the first conductivity type and embedded in the semiconductor layer below the second well region, wherein a lower surface of the second embedded layer is substantially disposed at a predetermined embedment depth.

17. The semiconductor device as described in claim 1, further comprising: A path unit metal contact structure is electrically coupled to the vertical path unit and the first well region, wherein the path unit metal contact structure extends laterally to cover a substantial portion of the first well region and serves as a field-effect plate.

18. The semiconductor device as described in claim 1, further comprising: A path unit metal contact structure is electrically coupled to the vertical path unit; And a first well metal contact structure electrically coupled to the first well region, wherein a ballast resistor is coupled between the path unit metal contact structure and the first well metal contact structure.

19. The semiconductor element as claimed in claim 1, wherein the terminal region further comprises: A second type of deep trench terminal unit has the same structure as the first type of deep trench terminal unit and is disposed between the first type of deep trench terminal unit and the second type of deep trench terminal unit.

20. A termination region structure for a semiconductor device, comprising: A vertical path unit is fabricated in a semiconductor layer, wherein the vertical path unit extends vertically from an upper surface of the semiconductor layer to a predetermined vertical path unit depth in the semiconductor layer, wherein the semiconductor layer has a first conductivity type, and the vertical path unit has a second conductivity type, the second conductivity type being opposite to the first conductivity type; one or more first-type deep trench terminal units are disposed next to and side by side with the vertical path unit, wherein each first-type deep trench terminal unit includes a first deep trench isolation structure and a first well region, wherein the first well region is laterally adjacent to the first deep trench isolation structure; and a second-type deep trench terminal unit includes a second deep trench isolation structure and a second well region, wherein the second well region is laterally adjacent to the second deep trench isolation structure, wherein the second deep trench isolation structure is disposed next to the one or more first-type deep trench terminal units.

21. The terminal area structure as described in claim 20, wherein the second deep trench isolation structure is disposed in a second deep trench, the second deep trench extending vertically into the semiconductor layer from the upper surface of the semiconductor layer to a predetermined second deep trench depth, the second deep trench depth being greater than the vertical path cell depth.

22. The terminal region structure as described in claim 20, wherein the second well region has a first conductivity type.

23. The terminal area structure as described in claim 20, wherein the second deep trench isolation structure is laterally disposed adjacent to the first type deep trench terminal unit that is furthest from the vertical path unit among the one or more first type deep trench terminal units.

24. The terminal area structure as described in claim 20, wherein the first deep trench isolation structure of each of the one or more first type deep trench terminal units is disposed in a first deep trench, an opening of the first deep trench is on the upper surface of the semiconductor layer, the first deep trench extends vertically into the semiconductor layer to a predetermined first deep trench depth, the first deep trench depth being greater than the vertical path unit depth.

25. The terminal area structure as claimed in claim 20, wherein when a voltage is applied or coupled to the first well area, the first well area of ​​each of the one or more first-type deep trench terminal units has a gradually changing voltage or potential distribution curve.

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