X-ray measurment system and x-ray measurment method
Patent Information
- Application Number
- TW114118190
- Authority / Receiving Office
- TW · TW
- Patent Type
- Patents
- Current Assignee / Owner
- Filing Date
- 2025-05-15
- Publication Date
- 2026-09-11
- Estimated Expiration
- 2045-05-14
Smart Images

Figure TWG2TB001910575_001 
Figure TWG2TB001910575_002 
Figure TWG2TB001910575_003
Abstract
Claims
1. An X-ray measurement system, comprising: An X-ray source, configured to produce an incident X-ray beam; An optical lens assembly for focusing an incident X-ray beam to a predetermined position; a divergence angle control element disposed between the optical lens assembly and the predetermined position, the divergence angle control element having a first portion and a second portion spaced apart by a predetermined distance, wherein at least a portion of the focused incident X-ray beam passes between the first portion and the second portion; and a two-dimensional detector for receiving a measurement X-ray beam generated by irradiating an object under test with the focused incident X-ray beam, the measurement X-ray beam having a divergence angle that varies with the predetermined distance, wherein the two-dimensional detector includes: a plurality of superconducting detection elements disposed on a circuit board and arranged to form a detector array, each superconducting detection element including a superconducting nanowire layer; an image capturing device electrically connected to the detector array via the circuit board; and a fluid cooling device including a cooling metal component and a fluid cooler, the cooling metal component contacting the circuit board and connected to the fluid cooler via at least one fluid line.
2. The X-ray measurement system as described in claim 1, wherein, The optical lens assembly includes a first focusing lens and a second focusing lens, which focus the incident X-ray beam in a first direction and a second direction, respectively, and the first direction is perpendicular to the second direction.
3. The X-ray measurement system as described in claim 2, wherein, The first part and the second part are arranged along a third direction and separated by the predetermined distance, and the third direction is perpendicular to an incident direction of the focused incident X-ray beam.
4. The X-ray measurement system as described in claim 3, wherein, The first part includes a first tip, the second part includes a second tip, and the first tip and the second tip are opposite to each other.
5. The X-ray measurement system as described in claim 4, wherein, The first tip and the second tip have a roughness ranging from 0 nm to 10 nm.
6. The X-ray measurement system as claimed in claim 3 further includes a first divergence angle control mechanism configured to drive the divergence angle control element to move the first portion and the second portion relative to each other to change the predetermined distance.
7. The X-ray measurement system as claimed in claim 3 further includes a second divergence angle control mechanism configured to manually drive the divergence angle control element to move the first portion and the second portion relative to each other to change the predetermined distance.
8. The X-ray measurement system as described in claim 2, wherein, The first focusing lens has a first focal point, the second focusing lens has a second focal point, the X-ray source is separated from the first focal point by a first distance, the first focal point is separated from the second focal point by a second distance, the second focal point is separated from the predetermined position by a third distance, the first distance is greater than the second distance, and the third distance is greater than the first distance.
9. The X-ray measurement system as claimed in claim 1, wherein, The two-dimensional detector includes a negative bias electrode layer, an electron blocking layer, an active layer, a first type semiconductor layer, a second type semiconductor layer, an insulating layer, and a polycrystalline silicon electrode layer.
10. An X-ray measurement method, comprising: Configure an X-ray source to generate an incident X-ray beam; An incident X-ray beam is focused onto a predetermined position using an optical lens assembly; an object to be tested is placed at the predetermined position; a two-dimensional detector is configured to receive a measurement X-ray beam generated by the focused incident X-ray beam irradiating the object to be tested after passing through a divergence angle control element, wherein the divergence angle control element is disposed between the optical lens assembly and the predetermined position, the divergence angle control element has a first portion and a second portion separated from each other by a predetermined distance, at least a portion of the focused incident X-ray beam passes between the first portion and the second portion, and the measurement X-ray beam has a divergence angle that varies with the predetermined distance; wherein the two-dimensional detector includes: a plurality of superconducting detection elements disposed on a circuit board and arranged to form a detector array, and each superconducting detection element includes a superconducting nanowire layer; an image capturing device electrically connected to the detector array through the circuit board; and a fluid cooling device including a cooling metal component and a fluid cooler, the cooling metal component contacting the circuit board and connected to the fluid cooler through at least one fluid line.
11. The X-ray measurement method as described in claim 10, wherein, The optical lens assembly includes a first focusing lens and a second focusing lens, which focus the incident X-ray beam in a first direction and a second direction, respectively, and the first direction is perpendicular to the second direction.
12. The X-ray measurement method as described in claim 11, wherein, The first part and the second part are arranged along a third direction and separated by the predetermined distance, and the third direction is perpendicular to an incident direction of the focused incident X-ray beam.
13. The X-ray measurement method as described in claim 12, wherein, The first part includes a first tip, the second part includes a second tip, and the first tip and the second tip are opposite to each other.
14. The X-ray measurement method as described in claim 13, wherein, The first tip and the second tip have a roughness ranging from 0 nm to 10 nm.
15. The X-ray measurement method as claimed in claim 12 further includes configuring a first divergence angle control mechanism to drive the divergence angle control element to move the first part and the second part relative to each other to change the predetermined distance.
16. The X-ray measurement method as claimed in claim 12 further includes operating a second divergence angle control mechanism to drive the divergence angle control element to move the first part and the second part relative to each other to change the predetermined distance.
17. The X-ray measurement method as described in claim 11, wherein, The first focusing lens has a first focal point, the second focusing lens has a second focal point, the X-ray source is separated from the first focal point by a first distance, the first focal point is separated from the second focal point by a second distance, the second focal point is separated from the predetermined position by a third distance, the first distance is greater than the second distance, and the third distance is greater than the first distance.
18. The X-ray measurement method as described in claim 10, wherein, The two-dimensional detector includes a negative bias electrode layer, an electron blocking layer, an active layer, a first type semiconductor layer, a second type semiconductor layer, an insulating layer, and a polycrystalline silicon electrode layer.
Citation Information
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