Manufacturing methods for controlling the number of pinholes in electrolytic copper foil, copper foil, and applications of copper foil

Abstract

This invention discloses an exemplary manufacturing method for controlling the number of pinholes in electrolytic copper foil. It also discloses exemplary specific examples of copper foil produced by such methods.

Claims

1. A method for controlling the pinhole density in a copper foil produced by electroplating, the method comprising adjusting one or more electroplating parameters, the adjustment of the one or more electroplating parameters including: (a) performing or omitting cathodic polishing prior to electroplating; (b) modifying the concentration of chloride ions in the electrolyte; and / or (c) incorporating one or more additives selected from one or more of chloride ions, gelatin, silane coupling agents and copper anti-dullness additives; wherein the adjustment of the one or more electroplating parameters enables the controllable adjustment of the pinhole density in the copper foil produced by electroplating, wherein the method includes performing the electroplating process with the adjusted one or more electroplating parameters to thereby produce a copper foil having a porosity of 0, 1 to 10, 11 to 50, 51 to 100 or greater per square decimeter.

2. The method of claim 1, wherein the concentration of chloride ions (Cl-) in the electrolyte is in the range of 0 to 70 parts per million.

3. The method of claim 1, wherein the concentration of copper(II) sulfate (CuSO4) is in the range of 200 g / L to 360 g / L.

4. The method of claim 1, wherein the concentration of sulfuric acid (H2SO4) is in the range of 40 g / L to 200 g / L.

5. The method of claim 1, wherein the concentration of the gelatin is in the range of 0 to 1 parts per million.

6. The method of claim 1, wherein the concentration of the silane coupling agent is in the range of 0.5 mg / L to 100 mg / L.

7. The method of claim 1, wherein the concentration of the copper anti-dullness agent is in the range of 0.5 mg / L to 100 mg / L.

8. The method of claim 1, wherein the electroplating temperature during the electroplating process is between 40 degrees Celsius (°C) and 75 degrees Celsius.

9. The method of claim 1, wherein the current density during the electroplating is between 10 amperes per square decimeter (A / dm²) and 120 A / dm².

10. The method of claim 1, wherein the method includes polishing the cathode prior to electroplating.

11. The method of claim 1, wherein adjusting the one or more electroplating parameters includes each of the following: (a) performing or omitting cathodic polishing prior to electroplating; (b) modifying the concentration of chloride ions in the electrolyte; and (c) incorporating one or more additives selected from one or more of chloride ions, gelatin, silane coupling agents and copper anti-dullness additives.

12. The method of claim 1, wherein adjusting the one or more electroplating parameters further includes (d) adjusting electroplating conditions including one or more of sulfuric acid concentration, electroplating temperature and current density.

13. A method for controlling the pinhole density in a copper foil produced by electroplating, the method comprising adjusting one or more electroplating parameters, the adjustment of the one or more electroplating parameters including: (a) Performing or omitting cathode polishing prior to electroplating; (b) Modifying the chloride ion concentration in the electrolyte; and / or (c) Incorporating one or more additives selected from one or more of chloride ions, gelatin, silane coupling agents, and copper anti-dullness additives; wherein the adjustment of the one or more electroplating parameters enables controllable adjustment of the pinhole density in the copper foil produced by electroplating, wherein the method comprises producing a copper foil having a thickness of less than 12 micrometers and a porosity of 1 to 10 per square decimeter via an electroplating process including the following electroplating parameters: a copper(II) sulfate (CuSO4) concentration in the range of 200 g / L to 360 g / L; a sulfuric acid (H2SO4) concentration in the range of 40 g / L to 200 g / L; polishing the cathode prior to electroplating; and a chloride ion (Cl-) concentration in the electrolyte in the range of 0 to 70 parts per million. It does not contain any gelatin additives, silane coupling agent additives, or copper anti-dullness additives; the current density is between 10 amperes per square decimeter (A / dm²) and 120 A / dm²; and the electroplating temperature is between 40 degrees Celsius (°C) and 75 degrees Celsius (°C).

14. A method for controlling the pinhole density in a copper foil produced by electroplating, the method comprising adjusting one or more electroplating parameters, the adjustment of the one or more electroplating parameters including: (a) Performing or omitting cathode polishing prior to electroplating; (b) modifying the chloride ion concentration in the electrolyte; and / or (c) incorporating one or more additives selected from one or more of chloride ions, gelatin, silane coupling agents, and copper anti-dullness additives; wherein the adjustment of the one or more electroplating parameters enables controllable adjustment of the pinhole density in the copper foil produced by electroplating, wherein the method comprises producing a copper foil having a thickness of less than 12 micrometers and a porosity of 51 to 100 per square decimeter via an electroplating process including the following electroplating parameters: copper(II) sulfate (CuSO4) concentration in the range of 200 g / L to 360 g / L; sulfuric acid (H2SO4) concentration in the range of 40 g / L to 200 g / L; not polishing the cathode prior to electroplating; chloride ion (Cl-) concentration in the electrolyte in the range of 0 to 70 parts per million; It does not contain any gelatin additives, silane coupling agent additives, or copper anti-dullness additives; the current density is between 10 amperes per square decimeter (A / dm²) and 120 A / dm²; and the electroplating temperature is between 40 degrees Celsius (°C) and 75 degrees Celsius (°C).

15. A method for controlling the pinhole density in a copper foil produced by electroplating, the method comprising adjusting one or more electroplating parameters, the adjustment of the one or more electroplating parameters including: (a) Performing or omitting cathode polishing prior to electroplating; (b) Modifying the chloride ion concentration in the electrolyte; and / or (c) Incorporating one or more additives selected from chloride ions, gelatin, silane coupling agents, and copper anti-dullness additives; wherein the adjustment of the one or more electroplating parameters enables controllable adjustment of the pinhole density in the copper foil produced by electroplating, wherein the method comprises producing a copper foil having a thickness of less than 12 micrometers and a porosity of 0 per square decimeter via an electroplating process including the following electroplating parameters: copper(II) sulfate (CuSO4) concentration in the range of 200 g / L to 360 g / L; sulfuric acid (H2SO4) concentration in the range of 40 g / L to 200 g / L; not polishing the cathode prior to electroplating; chloride ion (Cl-) concentration in the electrolyte in the range of 0 to 70 ppm; gelatin concentration of less than 1 ppm; It does not incorporate any silane coupling agent additives or copper anti-dullness additives; the current density is between 10 amperes per square decimeter (A / dm²) and 120 A / dm²; and the electroplating temperature is between 40 degrees Celsius (°C) and 75 degrees Celsius (°C).

16. A method for controlling the pinhole density in a copper foil produced by electroplating, the method comprising adjusting one or more electroplating parameters, the adjustment of the one or more electroplating parameters including: (a) Performing or omitting cathode polishing prior to electroplating; (b) modifying the chloride ion concentration in the electrolyte; and / or (c) incorporating one or more additives selected from chloride ions, gelatin, silane coupling agents, and copper anti-dullness additives; wherein the adjustment of the one or more electroplating parameters enables controllable adjustment of the pinhole density in the copper foil produced by electroplating, wherein the method comprises producing a copper foil having a thickness of less than 12 micrometers and a porosity of 0 per square decimeter via an electroplating process including the following electroplating parameters: copper(II) sulfate (CuSO4) concentration in the range of 200 g / L to 360 g / L; sulfuric acid (H2SO4) concentration in the range of 40 g / L to 200 g / L; not polishing the cathode prior to electroplating; and a chloride ion (Cl-) concentration in the electrolyte of 0 parts per million. It does not contain any gelatin additives, silane coupling agent additives, or copper anti-dullness additives; the current density is between 10 amperes per square decimeter (A / dm²) and 120 A / dm²; and the electroplating temperature is between 40 degrees Celsius (°C) and 75 degrees Celsius (°C).

17. A method for controlling the pinhole density in a copper foil produced by electroplating, the method comprising adjusting one or more electroplating parameters, the adjustment of the one or more electroplating parameters including: (a) Performing or omitting cathode polishing prior to electroplating; (b) Modifying the chloride ion concentration in the electrolyte; and / or (c) Incorporating one or more additives selected from one or more of chloride ions, gelatin, silane coupling agents, and copper anti-dullness additives; wherein the adjustment of the one or more electroplating parameters enables controllable adjustment of the pinhole density in the copper foil produced by electroplating, wherein the method comprises producing a copper foil having a thickness of less than 12 micrometers and a porosity greater than 100 per square decimeter via an electroplating process including the following electroplating parameters: copper(II) sulfate (CuSO4) concentration in the range of 200 g / L to 360 g / L; sulfuric acid (H2SO4) concentration in the range of 40 g / L to 200 g / L; polishing the cathode prior to electroplating; and chloride ion (Cl-) concentration in the electrolyte in the range of 0 to 70 parts per million. The concentration of silane coupling agent is in the range of 0.5 mg / L to 100 mg / L; no gelatin additives or copper anti-dullness additives are included; the current density is between 10 A / dm² and 120 A / dm²; and the electroplating temperature is between 40 °C and 75 °C.

18. A method for controlling the pinhole density in a copper foil produced by electroplating, the method comprising adjusting one or more electroplating parameters, the adjustment of the one or more electroplating parameters including: (a) Performing or omitting cathode polishing prior to electroplating; (b) Modifying the chloride ion concentration in the electrolyte; and / or (c) Incorporating one or more additives selected from one or more of chloride ions, gelatin, silane coupling agents, and copper anti-dullness additives; wherein the adjustment of the one or more electroplating parameters enables controllable adjustment of the pinhole density in the copper foil produced by electroplating, wherein the method comprises producing a copper foil having a thickness of less than 12 micrometers and a porosity of 51 to 100 per square decimeter via an electroplating process including the following electroplating parameters: a copper(II) sulfate (CuSO4) concentration in the range of 200 g / L to 360 g / L; a sulfuric acid (H2SO4) concentration in the range of 40 g / L to 200 g / L; polishing the cathode prior to electroplating; and a chloride ion (Cl-) concentration in the electrolyte in the range of 0 to 70 parts per million. The concentration of the copper anti-dullness agent is between 0.5 mg / L and 100 mg / L; no gelatin additives or silane coupling agent additives are included; the current density is between 10 A / dm² and 120 A / dm²; and the electroplating temperature is between 40°C and 75°C.

19. A copper foil produced by any one of claims 1 to 18.

20. The copper foil of claim 19, wherein the copper foil has a porosity in the range of 1 to 10 per square decimeter.

21. The copper foil of claim 19, wherein the copper foil has a porosity in the range of 11 to 50 per square decimeter.

22. The copper foil of claim 19, wherein the copper foil has a porosity in the range of 51 to 100 per square decimeter.

23. The copper foil of claim 19, wherein the copper foil has a porosity greater than 100 per square decimeter.

24. The copper foil of claim 19, wherein the copper foil includes pinholes having a diameter of less than 10 micrometers.

25. The copper foil of claim 19, wherein the copper foil has a thickness in the range of 3 micrometers to 15 micrometers.

26. The copper foil of claim 19, wherein the copper foil has a thickness of less than 12 micrometers.

27. The copper foil as requested in item 19, wherein: The copper foil has a thickness of less than 12 micrometers; the copper foil includes pinholes with a diameter of less than 10 micrometers; and the copper foil has a porosity in the range of 1 to 10 per square decimeter.

28. The copper foil as requested in item 19, wherein: The copper foil has a thickness of less than 12 micrometers; the copper foil includes pinholes with a diameter of less than 10 micrometers; and the copper foil has a porosity in the range of 11 to 50 per square decimeter.

29. The copper foil as claimed in claim 19, wherein: The copper foil has a thickness of less than 12 micrometers; the copper foil includes pinholes with a diameter of less than 10 micrometers; and the copper foil has a porosity in the range of 51 to 100 per square decimeter.

30. The copper foil as claimed in claim 19, wherein: The copper foil has a thickness of less than 12 micrometers; the copper foil includes pinholes with a diameter of less than 10 micrometers; and the copper foil has a porosity of greater than 100 per square decimeter.

31. An apparatus or system comprising a copper foil as claimed in claim 19, the copper foil being configured to manage the thermal and / or electromagnetic properties of the apparatus or system.

32. A smartphone comprising a copper foil as claimed in claim 19, the copper foil being configured to manage the thermal and / or electromagnetic properties of the smartphone.

Images