Showerhead faceplates with angled gas distribution passages for semiconductor processing tools

Abstract

A spray head panel for use in a semiconductor processing chamber is provided, the spray head panel including one or more subsets of gas distribution channels through which it passes, the gas distribution channels extending at least partially along an axis at an angle to the central axis of the spray head panel. This angled gas distribution channel can be used to specifically characterize the airflow characteristics of this spray head panel to produce various desired airflow behaviors in the gas delivered to the wafer via this spray head panel.

Description

Technical Field

[0001] This disclosure relates to a spray head panel with an angled gas distribution channel for use in semiconductor processing equipment. [Cross-reference to related applications]

[0002] The PCT request is filed concurrently with this specification and forms part of this application. Each of the applications for which the benefits or priorities asserted in the concurrently filed PCT request are incorporated herein by reference, in their entirety and for all purposes. Prior Technology

[0003] Semiconductor processing tools commonly use "spray heads" to distribute semiconductor processing gases throughout a substrate or wafer, which is supported within a semiconductor processing chamber by a base or chuck. Spray heads are typically characterized by a panel facing the wafer and including numerous gas distribution channels (e.g., holes) that deliver processing gases from one or more internal volumes of the spray head through the panel during semiconductor processing operations. Two common types of spray heads used in semiconductor processing tools exist—"chandelier" type spray heads and "embedded" type spray heads. Chandelier-type spray heads typically include a disc-shaped structure housing the gas distribution channels, one or more internal gas chambers for distributing processing gases to these gas distribution channels, and a rod connected to or extending from the top side of the disc-shaped structure to or through the ceiling of the processing chamber, wherein the chandelier-type spray head is located within the processing chamber. The rod supports the disc-shaped structure within the processing chamber and also guides the processing gases to the gas chambers within the disc-shaped structure. Embedded spray heads do not have a rod or equivalent structure; instead, they are simply installed on the wall of the semiconductor processing chamber and are usually used as a cover for the semiconductor processing chamber.

[0004] In various embodiments, the spray head panel may be a separate component from the rest of the spray head, or it may be an integral part of the spray head, for example, fused or welded together with other structures to form a single structure. Some spray heads may feature open internal gas chambers, such as one or more large volumes each fluidly connected to a process gas inlet and a plurality of gas distribution channels; however, other spray heads may incorporate a gas distribution plate, which may be an internal structure of the spray head, for guiding the process gas from the process gas inlet of the spray head to the various gas distribution channels on the spray head panel.

[0005] This article presents the design of various spray head panels, characterized by one or more sets of angled gas distribution channels. Summary of the Invention

[0006] Details of one or more embodiments of the subject matter described in this specification are set forth in the accompanying drawings and the embodiments described below. Other features, features, and advantages will become apparent from these embodiments, drawings, and the claims. The described embodiments include, but are not limited to, at least the following specific embodiments.

[0007] In some embodiments, a device may be provided including: a spray head panel having a plurality of gas distribution channels extending from a first side of the spray head panel to a second side of the spray head panel opposite the first side. In this embodiment, the first side and the second side may define an average mid-plane of the spray head panel. When the spray head panel is mounted in a semiconductor processing chamber and becomes part of the spray head of the semiconductor processing chamber, the second side of the spray head panel may face and be exposed to wafer supports within the semiconductor processing chamber. When viewed along a central axis perpendicular to the average mid-plane, the spray head panel may have an inner region and a peripheral region surrounding the inner region, and when the spray head panel is mounted in the semiconductor processing chamber and becomes part of the spray head of the semiconductor processing chamber, when viewed along the central axis, the boundary between the inner region and the peripheral region may conform to the inner circumferential wall surface of the spray head. The gas distribution channels in the first subset of the complex gas distribution channels may extend at least partially along an axis at a first angle to the central axis, and the gas distribution channels in the first subset of the gas distribution channels may be located entirely within the first annular region of the inner region.

[0008] In some embodiments, the gas distribution channels in the first gas distribution channel subset may be arranged in the outermost circular pattern of a plurality of concentric circular patterns of the gas distribution channels. The gas distribution channels in the first gas distribution channel subset may each intersect the first side of the spray head panel at a plurality of positions, wherein such positions are closer to the central axis than the positions where the gas distribution channels in the first gas distribution channel subset intersect the second side of the spray head panel. One or more of the circular patterns may be located within the circular pattern, wherein the first gas distribution channel subset is contained within the circular pattern, and one or more of the circular patterns are each circular patterns of gas distribution channels extending in a direction parallel to the central axis.

[0009] In some embodiments, the gas distribution channels in the first gas distribution channel subset may be arranged in a circular pattern of a plurality of concentric circular patterns of the gas distribution channels, wherein the circular patterns are radially adjacent to the outermost of the circular patterns, the gas distribution channels in the first gas distribution channel subset may each intersect the first side of the spray head panel at a plurality of positions, wherein such positions are closer to the central axis than the positions where the gas distribution channels in the first gas distribution channel subset intersect the second side of the spray head panel, and one or more of the circular patterns may be located within the circular pattern, wherein the first gas distribution channel subset is contained within the circular pattern, and the one or more of the circular patterns are circular patterns of gas distribution channels extending in a direction parallel to the central axis.

[0010] In some embodiments, the outermost circular pattern of the gas distribution channel may be a circular pattern of a second subset of the gas distribution channels, and the gas distribution channels in the second subset of the gas distribution channels may extend in a direction parallel to the central axis.

[0011] In some alternative embodiments, the outermost circular pattern of the gas distribution channels may be a circular pattern of a second subset of the gas distribution channels, and the gas distribution channels in the second subset of the gas distribution channels may extend at least partially along an axis at a second angle to the central axis.

[0012] In some embodiments of this invention, the first tilt angle and the second tilt angle may be the same.

[0013] In some embodiments, the gas distribution channels in the first gas distribution channel subset may be arranged in the innermost circular pattern of a plurality of concentric circular patterns of the gas distribution channels, and the gas distribution channels in the first gas distribution channel subset may each intersect the second side of the spray head panel at a plurality of positions, wherein such positions are closer to the central axis than the positions where the gas distribution channels in the first gas distribution channel subset intersect the first side of the spray head panel, and one or more of the circular patterns may be located outside the circular pattern, wherein the first gas distribution channel subset is contained within the circular pattern, and the one or more of the circular patterns are each circular patterns of gas distribution channels extending in a direction parallel to the central axis.

[0014] In some embodiments of the device, the innermost circular pattern of the gas distribution channel may be a circular pattern of a plurality of clusters of gas distribution channels, each cluster of gas distribution channels having one or more of the gas distribution channels located in the first subset of gas distribution channels.

[0015] In some embodiments of the device, the gas distribution channels in the first subset of gas distribution channels may be the gas distribution channels closest to the central axis.

[0016] In some embodiments of the device, the additional gas distribution channel subset of the plurality of gas distribution channels may extend at least partially along an axis at a second tilt angle to the central axis, the first tilt angle being different from the second tilt angle, and the gas distribution channels of the additional gas distribution channel subset may also be located within the first annular region.

[0017] In some embodiments of the device, the additional gas distribution channel subset of the plurality of gas distribution channels may extend at least partially along an axis parallel to the central axis, and the gas distribution channels of the additional gas distribution channel subset may also be located within the first annular region.

[0018] In some embodiments of the device, the gas distribution channels in the first subset of gas distribution channels may be configured in a plurality of concentric circular patterns.

[0019] In some of the above embodiments, the angles between the central axis and the isoaxial axis may be the same for each circular pattern, wherein the gas distribution channels in each circular pattern extend at least partially along the isoaxial axis.

[0020] In some other versions of the above embodiments, the angles between the central axis and the equiaxes may increase as the diameter of each circular pattern increases, wherein the gas distribution channels in each circular pattern extend at least partially along the equiaxes.

[0021] In some other versions of the above embodiments, the angles between the central axis and the equiaxes may decrease as the diameter of each circular pattern increases, wherein the gas distribution channels in each circular pattern extend at least partially along the equiaxes.

[0022] In some versions of the above embodiments, each gas distribution channel in the first gas distribution channel subset may follow a linear path through the spray head panel. In other versions of the above embodiments, each gas distribution channel in the first gas distribution channel subset may follow a non-linear path through the spray head panel.

[0023] In some versions of the above embodiments, each gas distribution channel in the first gas distribution channel subset may follow a branch path through the spray head panel and may have an inlet opening on the first side of the spray head panel and two or more outlet openings on the second side of the spray head panel.

[0024] In some embodiments, each branch path used by the gas distribution channels in the first gas distribution channel subset may have a plurality of portions, including an inlet portion and a plurality of outlet portions. The inlet portion of each gas distribution channel in the first gas distribution channel subset may have a first end that terminates at the inlet opening of the gas distribution channel. Each outlet portion of each gas distribution channel in the first gas distribution channel subset may have a first end that terminates at one of the outlet openings of the gas distribution channel. The inlet portion and the outlet portion of each gas distribution channel in the first gas distribution channel subset may have a plurality of second ends that are fluidly connected to each other within the spray head panel. At least two of the outlet portions of each gas distribution channel in the first gas distribution channel subset may be of equal length.

[0025] In some other embodiments of the device, each branch path used by the gas distribution channels in the first gas distribution channel subset may have a plurality of portions, including an inlet portion and a plurality of outlet portions. The inlet portion of each gas distribution channel in the first gas distribution channel subset may have a first end that terminates at the inlet opening of the gas distribution channel. Each outlet portion of each gas distribution channel in the first gas distribution channel subset may have a first end that terminates at one of the outlet openings of the gas distribution channel. The inlet portion and the outlet portion of each gas distribution channel in the first gas distribution channel subset may have a plurality of second ends that are fluidly connected to each other within the spray head panel. At least two of the outlet portions of each gas distribution channel in the first gas distribution channel subset may be of unequal length.

[0026] In some embodiments of the device, at least two of the output portions of each gas distribution channel in the first gas distribution channel subset may have different cross-sectional areas in their respective cross-sectional planes, and each cross-sectional plane may be perpendicular to a portion of the branch path to which the respective output portion is attached.

[0027] In some embodiments of the device, the cross-sectional area of ​​the inlet portion of each gas distribution channel in the first gas distribution channel subset in the corresponding cross-sectional plane may be different from the cross-sectional area of ​​one or more of the outlet portions of the gas distribution channel in the corresponding cross-sectional plane, and each cross-sectional plane may be perpendicular to a portion of the branch path to which the corresponding portion is attached.

[0028] In some of the above embodiments, the gas distribution channels in the second subset of the plurality of gas distribution channels may be located in the second annular region within the inner region, and the first annular region may be different from the second annular region.

[0029] In some embodiments, the gas distribution channels in the subset of the second gas distribution channels may extend along an axis parallel to the central axis.

[0030] In some embodiments, the second annular region may have an inner boundary and an outer boundary, the first annular region and the second annular region may be concentric, and the first annular region may be located within the inner boundary.

[0031] In some embodiments, the first annular region may have an inner boundary and an outer boundary, the first annular region and the second annular region may be concentric, and the second annular region may be located within the inner boundary.

[0032] In some embodiments, there may be a complex set of concentric rings of gas distribution channels within the subset of the second gas distribution channels.

[0033] In some of the above embodiments, the device may further include the semiconductor processing chamber, the spray head, and the wafer support. In this embodiment, the spray head may be located above the wafer support, which is located within the semiconductor processing chamber. The wafer support may have a circular wafer support area with a diameter D, configured to support a semiconductor wafer with a nominal diameter D. The spray head panel may be mounted in the spray head, such that the second side of the spray head panel faces the wafer support, and there may be no structure between the spray head panel and at least 90% of the wafer support area.

[0034] In some embodiments of this invention, the device may include a gas distribution plate located within the spray head and having a plurality of output ports configured to supply processed gas to the gas distribution channels. Simple Explanation of the Diagram

[0035] The following figures are referenced in the discussion below; these figures are not intended to limit the scope, but are provided only to facilitate the discussion below.

[0036] Figure 1 shows a simplified diagram of an exemplary semiconductor processing device.

[0037] Figure 2 illustrates a simplified diagram of another exemplary semiconductor processing device.

[0038] Figure 3 shows a planar cross-sectional view of an exemplary spray head.

[0039] Figure 4 shows a cross-sectional view of a portion of an exemplary spray head panel installed in an exemplary semiconductor processing device.

[0040] Figures 5, 6, and 7 illustrate an isometric view, a top view, and a partial lateral cross-sectional view of an exemplary sprinkler head panel.

[0041] Figures 8, 9 and 10 illustrate an isometric view, top view and lateral partial cross-sectional view of an exemplary sprinkler head panel, which is similar to the sprinkler head panels of Figures 5, 6 and 7 but has an undulating underside.

[0042] Figures 11, 12 and 13 illustrate an isometric view of another exemplary spray head panel.

[0043] Figures 14, 15 and 16 illustrate an isometric view, top view and lateral partial cross-sectional view of an exemplary sprinkler head panel, which is similar to the sprinkler head panels of Figures 11, 12 and 13 but has an undulating underside.

[0044] Figure 17 shows a cross-sectional view of a portion of another exemplary spray head panel installed in an exemplary semiconductor processing device.

[0045] Figures 18, 19 and 20 illustrate an isometric view, top view and lateral partial cross-sectional view of another exemplary sprinkler head panel.

[0046] Figures 21, 22 and 23 illustrate an isometric view, top view and lateral partial cross-sectional view of an exemplary sprinkler head panel, which is similar to the sprinkler head panels of Figures 18, 19 and 20 but has an undulating underside.

[0047] Figure 24 illustrates a cross-sectional view of a portion of another exemplary spray head panel installed in an exemplary semiconductor processing device.

[0048] Figure 25 illustrates a cross-sectional view of a portion of a further exemplary spray head panel installed in an exemplary semiconductor processing apparatus.

[0049] Figure 26 illustrates a cross-sectional view of a portion of a further exemplary spray head panel installed in an exemplary semiconductor processing apparatus.

[0050] Figure 27 illustrates a cross-sectional view of a portion of another exemplary spray head panel installed in an exemplary semiconductor processing device.

[0051] Figure 28 illustrates a cross-sectional view of a portion of an additional exemplary spray head panel installed in an exemplary semiconductor processing device.

[0052] Figure 29 illustrates a cross-sectional view of a portion of another exemplary spray head panel installed in an exemplary semiconductor processing device. Implementation

[0053] Examples of various embodiments are illustrated in the accompanying drawings and further described below. It should be understood that the discussions herein are not intended to limit the scope of the claims to the specific embodiments described. Rather, they are intended to cover alternatives, modifications, and equivalents that may be included within the spirit and scope of the invention as defined by the appended claims. In the following embodiments, numerous specific details are set forth to provide a thorough understanding of the invention. The invention may be practiced without some or all of these specific details. In other instances, well-known processing operations have not been described in detail to avoid unnecessarily obscuring the invention.

[0054] Figure 1 illustrates a simplified diagram of an exemplary semiconductor processing apparatus. Figure 1 illustrates an apparatus 100 including a semiconductor processing chamber 102, which has a wafer support 104 and a spray head 110 located therein. It will be understood that Figure 1 only shows half of the various structures illustrated in Figure 1; the other half is generally similar in appearance, but not necessarily similar. To show this general symmetry, a central axis 138 is shown in Figure 1, while the apparatus portion to the left of the central axis 138 is omitted. The wafer support 104 has a wafer support region 106 that is used to support a wafer 108 within the semiconductor processing chamber 102 during wafer processing operations. As seen in Figure 1, the wafer support 104 is located below the spray head 110, such that processing gases flowing through the spray head 110 (as indicated by the dashed arrows) flow onto and throughout the wafer 108.

[0055] In this example, the shower head 110 is a chandelier-type shower head with a rod portion 122 connected to a back plate 124. In this case, the back plate 124 has a plurality of holes through which threaded fasteners 120 are inserted. The threaded fasteners 120 can be used to retain an annular circumferential wall 128 to the back plate 124. The circumferential wall 128 may therefore have a circumferential wall frame or other retaining structure around its inner periphery, which can engage with the support and the shower head panel 112. The circumferential wall 128 may also have an inner circumferential wall surface 130, which at least partially defines the internal volume of the shower head 110. It will be understood that other shower head designs considered within the scope of this disclosure may use other circumferential wall structures, such as those comprising a circumferential wall simply extending from and adjacent to the back plate 124 and / or the shower head panel 112.

[0056] The spray head panel 112 may have a plurality of gas distribution channels 126 through which it passes. Although the spray head panel shown has a relatively coarse spacing between the gas distribution channels 126 through which it passes, it will be understood that there may be hundreds or thousands of such gas distribution channels 126 extending from a first side 132 of the spray head panel 112 through it to a second side 134 of the spray head panel 112, wherein the second side 134 faces and is exposed to the wafer support 104 when the spray head panel 112 is mounted in the spray head 110. The first side 132 and the second side 134 may define an average mid-plane 136 therebetween. It will be understood that although the first side 132 and the second side 134 are shown as substantially planar in FIG. 1, in some embodiments, one or both of the first side 132 and the second side 134 may be undulating or otherwise have an uneven profile.

[0057] As used herein, the term "average midplane 136" can refer to a reference plane positioned and oriented relative to one or more surfaces such that the average and maximum distance between the average midplane and the one or more surfaces is minimized. The average midplane of a component or component portion is understood to be the average midplane defined by the main surface of that component or component portion, such as a larger surface of the component or component portion, but excluding, for example, small holes or other minute features that do not contribute to the overall shape of the component or component portion. For example, for a filter, its average midplane will be defined by the inner and outer surfaces of the bowl-shaped portion of the filter, but will not be defined by the inner surface of the hundreds or thousands of holes passing through the filter, or by the surface of the handle portion of the filter (if present).

[0058] It will be understood that the term "spray head panel" as used herein refers to a structure that is part of a semiconductor processing spray head and has a surface with multiple openings to gas distribution channels, wherein when mounted within a spray head in a semiconductor processing chamber, this surface faces the wafer support. The spray head panel is typically the spray head component or element closest to the wafer being processed within this semiconductor processing chamber, and there is generally no other structure of the semiconductor processing chamber or tooling between the spray head panel and at least 90% of the wafer support area of ​​the wafer support located below it (at least during normal wafer processing operations—of course, during wafer loading / unloading operations, a wafer handling robot may insert an end effector into this gap, but this brief situation does not occur during wafer processing operations). Of course, the wafer that can be supported by the wafer support area is not actually a component or structure of the semiconductor processing chamber or tooling. In practice, there may be no or almost no structure of the semiconductor processing chamber or tooling between the wafer support area and the spray head panel; however, in some cases, an edge ring may be used. The edge ring surrounds the wafer and may overlap with the periphery of the thin ring of the wafer (and thus with the wafer support area). Generally, although this may cause some structures (the inner edge of the edge ring) to lie between the spray head panel and the wafer support area, this overlap is well within 10% of the area of ​​the wafer support area.

[0059] In the device 100 of Figure 1, the spray head 110 also includes a gas distribution plate 114, which includes a plurality of gas distribution plate channels 118 that distribute the processed gas to a plurality of gas distribution ports 116 in the gas distribution plate 114 adjacent to the first side 132 of the spray head panel 112. The gas distribution plate 114 can be designed to provide a predetermined airflow distribution to various gas distribution channels 126, wherein the predetermined airflow distribution is specifically formulated for various desired processing conditions.

[0060] Figure 2 illustrates a simplified diagram of another exemplary semiconductor processing apparatus. The apparatus 100 of Figure 2 is the same as the apparatus 100 of Figure 1, except that the apparatus of Figure 2 does not include the gas distribution plate 114 and therefore simply has an open internal gas chamber volume for providing the processing gas delivered through the gas inlet in the rod 122 to the gas distribution channel 126.

[0061] The various types of angled gas distribution channels or combinations of angled and non-angled (i.e., parallel to the central axis) gas distribution channels discussed below can be used in any of the spray head types illustrated in Figures 1 and 2, as well as in the context of embedded spray head types with similar internal designs. In some embodiments, this spray head can also serve as an electrode, for example, in a charge-coupled plasma treatment chamber.

[0062] Figure 3 illustrates a planar cross-sectional view of an exemplary spray head, specifically along the central axis 138. As shown, the spray head 110 has an inner region 142 surrounded by a peripheral region 144. The boundary 140 between the inner region 142 and the peripheral region 144 may correspond to the inner circumferential wall surface 130 of the circumferential wall 128.

[0063] In some embodiments, the spray head panel 112 shown in Figures 1 and 2 is a spray head panel in which all the gas distribution channels 126 within the inner region 142 of the spray head panel 112 are perforated, wherein the perforations have a central axis parallel to the central axis 138. However, in some embodiments, the spray head panel 112, characterized in that at least some of the gas distribution channels 126 extend at least partially along an axis at an angle to the central axis 138, provides the ability to fine-tune or otherwise modify the airflow exiting the spray head panel 112 to adapt the airflow to various processing requirements. For example, a spray head panel with angled gas distribution channels allows a gas distribution plate developed for a particular process (e.g., gas distribution plate 114 of Figure 1) to be reused for other processes, which would benefit from having gas delivered from at least some points on the underside of the spray head panel, wherein these points are not aligned with the position of the gas distribution port (e.g., gas distribution port 116) of the gas distribution plate. By using angled gas distribution channels, a specific gas distribution plate design can be adjusted for use with multiple different panels. In some embodiments, the spray head 110 may have gas distribution channels terminating at different locations on the wafer-facing side of the spray head panel 112, but terminating at the same or nearly identical locations on the gas distribution plate-facing side of the spray head panel 112. This allows for modification or adjustment of the gas distribution profile of each spray head by locating the gas distribution channel outlet holes, without requiring modifications to the gas distribution plate 114 used to have matching gas distribution ports at the same locations. This avoids the potential costs involved in developing, testing, and evaluating new gas distribution plates or new spray head panels for each spray head.

[0064] A given set of one or more subsets of gas distribution channels 126 of a spray head panel 112 may include such angled or partially angled gas distribution channels 126. Each of these subsets may be included in a corresponding annular region of the spray head panel 112; in some cases, a common annular region of the spray head panel 112 may include two or more subsets. In other cases, the subset may include gas distribution channels 126 arranged within two or more annular regions, wherein other gas distribution channels 126 are located within the two or more annular regions.

[0065] Figure 4 illustrates a cross-sectional view of a portion of an exemplary spray head panel mounted in an exemplary semiconductor processing apparatus. In Figure 4, spray head 410 is shown positioned above wafer support 404 and wafer 408. Spray head 410 is only partially shown, with the portion to the left of the central axis 438 omitted, and the portion of spray head panel 412 between the curved break lines also omitted. It will be generally understood that the portion of spray head panel 412 between the break lines may also have gas distribution channels 426 through which it passes.

[0066] As shown in Figure 4, the spray head panel 412 has a first side 432 and a second side 434; gas distribution channels 426 and 426' can extend from the first side 432 through the spray head panel 412 to the second side 434. The circumferential wall surface 430 of the circumferential wall 428 can be used to define the internal region of the spray head panel 412, wherein the gas distribution channels 426 and 426' can be located within the internal region.

[0067] As shown in Figure 4, the gas distribution channel 426 closest to the central axis 438 of the spray head panel 412 has a hole parallel to the central axis 438 (i.e., not at an angle). However, the gas distribution channel 426' furthest from the central axis 438 has a hole extending along an axis at an angle to the central axis 438. In this example, the gas distribution channel 426' furthest from the central axis 438 is at an angle, such that the position where this gas distribution channel 426' intersects with the first side 432 of the spray head panel 412 is closer to the central axis 438 than the position where the gas distribution channel 426' intersects with the second side 434 of the spray head panel 412.

[0068] In some embodiments of the spray head panel similar to that of Figure 4, the spray head panel may, for example, have a first circular array of gas distribution channels, wherein the gas distribution channels extend along an axis at an angle to the central axis. The gas distribution channels in the first circular pattern may extend at least partially along an axis, wherein the axis forms an angle between approximately 40° and 65° (e.g., between approximately 50° and 55°) relative to an axis parallel to the central axis. In some embodiments, these gas distribution channels may be angled such that the position where the gas distribution channels intersect with a first side of the spray head panel is closer to the central axis than the position where the gas distribution channels intersect with a second side of the spray head panel. It will be understood that the circular patterns referred to in this article are nominal circular patterns, which include both perfect circular patterns (in which the items in the circular pattern are located at positions that correspond perfectly to the circumference of the circle) and ordinary circular patterns (which may allow the items in the pattern to deviate slightly from the perfect circular pattern, for example, to place a subset of the items at positions less than 1% to 2% of the diameter of the circular pattern away from the position of the "perfect" circular pattern).

[0069] Figures 5, 6, and 7 illustrate isometric views, top views, and partial lateral cross-sectional views of an exemplary spray head panel (such as those described above); the following description may refer to this example, but it will be understood that the illustrated example is not limited to the following description. In Figures 5, 6, and 7, the spray head panel 512 is shown having a first side 532 and a second side 534 (which, when in effective use, will typically face the wafer being processed). The spray head panel 512 includes a plurality of gas distribution channels 526, including angled gas distribution channels 526', which extend between the first side 532 and the second side 524 and are arranged in a circular pattern around a central axis 538 of the spray head panel 512.

[0070] In some embodiments, additional concentric circular patterns of a plurality of gas distribution channels may also exist, which are also arranged around the central axis 538 of the spray head panel 512. For example, there may be 5, 6, 7, 8, 9, 10, etc., additional concentric circular patterns of gas distribution channels extending through the spray head panel. In some instances, some of the circular patterns of the gas distribution channels may be circular patterns of much smaller circular patterns of the gas distribution channels, for example, small (e.g., 0.1 inch to 0.5 inch in diameter) circular patterns of the gas distribution channels may themselves be arranged in one or more of such concentric circular patterns. For example, the spray head panel 512 includes a total of 7 concentric circular patterns of gas distribution channels (including a first circular pattern which includes the angled gas distribution channel 526'). The innermost circular patterns of the gas distribution channels shown in Figures 5 and 6 are actually circular patterns of small clusters of gas distribution channels 526, in which the gas distribution channels 526 are also arranged in smaller circular patterns within each cluster.

[0071] Generally, it will be understood that small clusters of gas distribution channels (such as those described above) can be used in any configuration of gas distribution channels described herein to replace a single gas distribution channel. For example, any circular pattern of gas distribution channels can also be implemented as a circular pattern of clusters of gas distribution channels. Furthermore, any such cluster can consist entirely of angled gas distribution channels, entirely of non-angled channels (i.e., extending along an axis parallel to the central axis), or a mixture thereof.

[0072] In Figures 5 to 7, the first circular pattern of the gas distribution channel 526' is located between the outermost circular pattern (which is at a non-tilted angle) of the gas distribution channel 526 and the second circular pattern of the gas distribution channel 526, wherein the second circular pattern of the gas distribution channel 526 is located radially inside the outermost circular pattern of the gas distribution channel 526.

[0073] In some embodiments, there may be an additional concentric pattern of seven gas distribution channels. In some instances, the innermost concentric pattern comprises a subset of gas distribution channels, each of which is arranged in a much smaller circular pattern (where the center of each smaller circular pattern is located in the pattern position of the larger concentric circular pattern). The gas distribution channels in some or all of these additional concentric circular patterns of the gas distribution channel may extend along an axis parallel to the central axis of the spray head panel. In some further embodiments, each circular pattern of the gas distribution channel may have 6 to 14 additional gas distribution channels, or in some cases 8 to 12, compared to the number of gas distribution channels in the next smallest diameter circular pattern of the gas distribution channel (or compared to the set of gas distribution channels in the innermost circular pattern). The diameter of this additional concentric circular pattern can be larger than the diameter of the complex set of circular patterns in the gas distribution channel. For example, the radius of each circular pattern (where they intersect relative to the first side of the gas distribution channel spray head panel) is typically 0.5 inches to 1 inch larger than the radius of the next closest smaller circular pattern. In this embodiment, the diameter of the gas distribution channel can be, for example, approximately 0.02 inches to 0.04 inches.

[0074] In some embodiments, the radial spacing between the circular pattern of the inclined gas distribution channel and adjacent circular patterns or gas distribution channel patterns may be greater than or less than described above. For example, in some embodiments, the first circular pattern of the inclined gas distribution channel may be radially intermediate between two other circular patterns of the gas distribution channel, wherein the gas distribution channel in the first circular pattern intersects the first side of the spray head panel at a position in a circular pattern having a radius, wherein the radius is within 0.1 inches to 0.2 inches of the radius of the nearest circular pattern within the first circular pattern. In some further embodiments, other circular patterns of the gas distribution channels radially outward and radially adjacent to the first circular pattern may be radially outward separated from the first circular pattern, such that the positions where the gas distribution channels intersect the first and second sides of the spray head panel are both completely located between two circular patterns radially adjacent to the first circular pattern. In the context of concentric circular patterns or concentric circles, the term "radially adjacent" as used herein refers to two of a particular type of article or feature (e.g., a circular pattern) that are concentrically arranged and have no other instances of said article or feature between them. Therefore, in the set of five concentric rings, the third ring will be radially adjacent to the second and fourth rings, but not radially adjacent to the first and fifth rings.

[0075] In some embodiments, the spray head panel shown in Figures 5 to 7 can increase the residence time of the processing gas along the outer periphery of the wafer being processed. For example, the spray head panel of Figures 5 to 7 can be used in conjunction with a gas distribution plate (not shown, but refer to Figure 1, for example), which uses a strip-like approach, for example having a first gas distribution port within a circular region for conveying gas under a first flow condition, and a second gas distribution port located outside the circular region for conveying gas under a second flow condition. This gas distribution plate can, for example, have two rings of the second gas distribution port and a plurality of rings of the first gas distribution port. The two rings of the second gas distribution port are typically used as two corresponding outer rings for supplying gas to the gas distribution channels in the spray head panel under the second flow condition. Similarly, the rings of the first gas distribution port are typically used as corresponding inner rings for supplying gas to the gas distribution channels in this spray head panel under the first flow condition.

[0076] Referring to the spray head panel in Figures 5 to 7, in some embodiments, the angled gas distribution channel 526' in the first circular pattern can be used to supply gas from the outermost ring of the first gas distribution port of the strip-shaped gas distribution plate exposed above, such that the gas is discharged to the lower side of the spray head panel at a position outside the circular area. For example, in Figures 5 to 7, the circular area is connected to the hole at the intersection of the angled gas distribution channel 526' and the first side 532. Therefore, the outermost ring of the first gas distribution port will supply gas to the gas distribution channel under the first flow condition through two concentric rings—the gas distribution channel 526' of the spray head panel 512 and the ring of the gas distribution channel 526 immediately adjacent to its radially inner side. At the same time, the two rings of the second gas distribution port will supply gas to the gas distribution channel 526 of the spray head panel 512 under the second flow condition through only a single outer ring, namely the outermost ring of the gas distribution channel 526. This configuration allows more gas to be directed closer to the wafer edge, and compared to a spray head panel with only vertical, non-angled gas distribution channels corresponding to the positions of gas distribution ports on the gas distribution plate, this allows the gas to remain above the wafer edge (which may, for example, be approximately below the outermost ring of gas distribution channel 526) for a longer period of time. Therefore, compared to a non-angled gas distribution spray head panel using the same gas distribution plate, the spray head panels of Figures 5 to 7 can improve the uniformity of the wafer edge.

[0077] Figures 8, 9, and 10 illustrate an isometric view, top view, and partial lateral cross-sectional view of an exemplary spray head panel, similar to the spray head panels of Figures 5, 6, and 7, but with an undulating underside. The undulating underside of the spray head panel can be configured to alter the plasma distribution, which can be ignited beneath the spray head panel. For example, the spray head panel can serve as an electrode in a plasma generation background, and the profile of the spray head panel can promote enhanced plasma stability and reduced inhomogeneity in wafer processing performed using this spray head panel.

[0078] For example, as shown in Figures 8, 9, and 10, the lower surface of the spray head panel 512 may be curved (e.g., convex) in the central region and concave in the outer region. In other words, the lower surface transitions from a circular convex central region to an annular concave outer region, and the thicknesses of the central region and the concave region may be different. For example, the lower surface may be undulating, such that the thickness or distance between the upper and lower surfaces of the spray head panel decreases in a curved manner from the center of the spray head panel 512 into the outer region of the spray head panel 512. The lower surface may be further undulating, such that the thickness or distance between the upper and lower surfaces of the spray head panel may then increase in a curved manner after entering the outer region of the spray head panel 512 and before it begins to decrease again or remains flat near the outer periphery of the spray head panel 512.

[0079] In some additional embodiments, a plurality of concentric circular patterns of gas distribution channels may exist, extending along an axis at an angle relative to the central axis of the spray head panel. For example, in some embodiments, a first circular pattern may be the next-to-outermost circular pattern of the gas distribution channels in the spray head panel, and the spray head panel may include a second circular pattern radially adjacent to the first circular pattern and being the outermost circular pattern of the gas distribution channels. Both the first and second circular patterns may include gas distribution channels that extend at least partially along an axis at an angle parallel to the central axis of the spray head panel, such that the positions where these gas distribution channels intersect with the first side are closer to the central axis of the spray head panel than the positions where these same gas distribution channels intersect with the second side of the spray head panel.

[0080] Figures 11, 12, and 13 illustrate an isometric view, top view, and partial lateral cross-sectional view of another exemplary spray head panel, wherein the spray head panel has two circular patterns of inclined gas distribution channels. The spray head panel 1112 of Figures 11 to 13 is similar to spray head panel 512, and it may exhibit features marked with the same last two digits as the corresponding labels in Figures 5 to 7. Therefore, unless otherwise indicated or obvious, the previous description of this similar element of Figures 5 to 7 also applies to this analogue. In Figures 11 to 13, the outermost circular pattern of the gas distribution channel 1126' is the second circular pattern, while the circular pattern of the gas distribution channel 1126' immediately adjacent to the second circular pattern on the radially inner side is the first circular pattern.

[0081] In some embodiments, additional concentric circular patterns of gas distribution channels may exist, located within the first circular pattern, i.e., their diameter is smaller than that of the first circular pattern. These additional concentric circular patterns may be radially separated, for example, in a manner similar to that described above. One or more of the gas distribution channels within these additional circular patterns (and in at least one instance, the owner) within the first circular pattern may extend along an axis parallel to the central axis of the spray head panel. In some embodiments, a circular region 1111 may exist, wherein the gas distribution channels of the first circular pattern are entirely located inside the circular region, and the gas distribution channels of the second circular pattern are entirely located outside the circular region 1111.

[0082] Figures 14, 15 and 16 illustrate an isometric view, top view and lateral partial cross-sectional view of an exemplary sprinkler head panel, which is similar to the sprinkler head panels of Figures 11, 12 and 13 but has an undulating underside.

[0083] An alternative configuration is shown in Figure 17, which is a cross-sectional view of a portion of another exemplary spray head panel mounted on an exemplary semiconductor processing apparatus. Many of the various elements shown in Figure 17 (and the remaining figures) are similar to those shown in Figure 4, and the element symbols with the same last two digits are used to indicate such similar elements in Figure 17 (and the remaining figures). The reader may refer to the above discussion of these elements with respect to Figure 4; for the sake of brevity, these elements will not be described in detail below unless the context requires it.

[0084] As shown in Figure 17, the gas distribution channel 1726 furthest from the central axis 1738 of the spray head panel 1712 has a hole parallel to the central axis 1738. However, the gas distribution channel 1726' closest to the central axis 1738 has a hole extending along an axis at an angle to the central axis 1738. In this example, the gas distribution channel 1726' closest to the central axis 1738 is angled, such that the position where this gas distribution channel 1726' intersects with the first side 1732 of the spray head panel 1712 is farther from the central axis 1738 than the position where the gas distribution channel 1726' intersects with the second side 1734 of the spray head panel 1712.

[0085] This configuration allows the gas guided through the angled gas distribution channel 1726' to have a higher flow rate across the wafer in the radially inward direction relative to the central axis 1738 compared to the gas flow from the non-angled gas distribution channel 1726. This allows the gas to have a longer residence time above the wafer and to move toward the wafer center before moving toward the wafer periphery.

[0086] In some embodiments similar to Figure 17, the spray head panel may have a circular pattern of, for example, a plurality of gas distribution channels, wherein at least one of the gas distribution channels in the set extends along an axis at an angle to the central axis.

[0087] Figures 18, 19, and 20 illustrate an isometric view, top view, and partial lateral cross-sectional view of another exemplary spray head panel, wherein the spray head panel has this configuration of gas distribution channels. The spray head panel 1812 of Figures 18 to 20 is similar to spray head panel 512, and it may exhibit features labeled with the same last two digits as the corresponding labels in Figures 5 to 7. Therefore, unless otherwise indicated or obvious, the previous description of this similar element of Figures 5 to 7 also applies to this analogue.

[0088] This circular array may, for example, have a nominal diameter between 1 inch and 2 inches (e.g., between about 1.3 and 1.4 inches). The set of gas distribution channels may, for example, have a triplet of three gas distribution channels, wherein the three gas distribution channels are configured such that they intersect with a first side of the spray head panel to form an equilateral triangle pattern, for example, a triplet circular array with a diameter between, for example, 0.1 inches and 0.25 inches (e.g., about 0.15 inches or 0.2 inches). In some instances, the number of gas distribution channels in the set of gas distribution channels may be greater than three, for example, four, five, six, etc. In some examples, each of these gas distribution channel sets may include at least two gas distribution channels extending through the spray head panel along a direction substantially parallel to the central axis, wherein one or more of the remaining gas distribution channels in each of these sets extend at least partially along one or more axes that form one or more angles with respect to the central axis or an axis parallel to the central axis. In Figures 18 to 20, the gas distribution channel 1826' in each triplet of the gas distribution channel shown in the innermost circular pattern of the gas distribution channel is inclined at an angle, while the other two gas distribution channels 1826 in each triplet are not inclined at an angle.

[0089] For example, in some embodiments, the gas distribution channels in each gas distribution channel set that are inclined may have an inward angle of about 20° to 40° (e.g., 30°) relative to an axis parallel to the central axis of the spray head panel, such that the gas distribution channel is closer to the central axis of the spray head panel on a second side (opposite to its first side) than on a first side. In some embodiments, there may also be a plurality of additional concentric circular patterns of gas distribution channels, which are also arranged around the central axis of the spray head panel. For example, there may be 5, 6, 7, 8, 9, 10, etc., additional concentric circular patterns of gas distribution channels extending through the spray head panel. In some embodiments, there may be 7 additional concentric patterns of gas distribution channels. In some further embodiments, each circular pattern of the gas distribution channel may have between 6 and 14 (or in some cases, between 8 and 12) additional gas distribution channels compared to the number of gas distribution channels in the next smallest diameter circular pattern of the gas distribution channel (or the set of gas distribution channels compared to the innermost circular pattern). The diameter of these additional concentric circular patterns may be larger than the diameter of the circular patterns in the complex set of gas distribution channels; for example, the radius of each circular pattern (relative to the position where the gas distribution channel intersects with the first side of the spray head panel) may be larger than the radius of the next closest smaller circular pattern by a scale of 0.5 inches to 1 inch. In this embodiment, the diameter of the gas distribution channel may, for example, be approximately 0.02 inches to 0.04 inches.

[0090] The spray head panels shown in Figures 18 to 20, for example, have angled gas distribution channels located near the center of the spray head panel, which can enhance wafer uniformity near the wafer center. For example, in some instances, it may be desirable to avoid having gas distribution channels exiting the spray head panel near its center, because holes or openings near the center of the spray head panel may increase the risk of hollow cathode discharge events due to the increased radio frequency energy near the center. However, omitting a gas distribution channel from the center of the spray head panel can create dead zones in the center of the wafer, which suffer lower gas delivery and thus become a source of wafer non-uniformity. Using a gas distribution channel, such as gas distribution channel 1826', can help ensure adequate delivery of process gas to the wafer center, where gas distribution channel 1826' is angled to guide the gas radially inward and closer to the wafer center (but not close enough to risk hollow cathode discharge). For example, the closer proximity of the gas delivery point to the wafer center, along with the combination of the radially inner velocity vector of the airflow from the gas distribution channel 1826', can act to increase the airflow to the very center of the wafer during processing, thereby reducing the non-uniformity at the wafer center.

[0091] Figures 21, 22 and 23 illustrate an isometric view, top view and lateral partial cross-sectional view of an exemplary sprinkler head panel, which is similar to the sprinkler head panels of Figures 18, 19 and 20 but has an undulating underside.

[0092] It will be appreciated that the configurations shown in Figures 4 and 17 may also include configurations with multiple concentric patterns of angled gas distribution channels (e.g., 2, 3, 4, etc., concentric rings of this angled gas distribution channel). In some extreme cases, all gas distribution channels may be angled in either of the directions shown, for example, angled radially inward (as shown in Figure 17) or angled radially outward (as shown in Figure 4). It will also be understood that in some embodiments, additional configurations of angled gas distribution channels may be used, wherein the gas distribution channel angled radially inward may be located at the position furthest from the central axis of the spray head panel, or the gas distribution channel angled radially outward may be located at the position closest to the central axis of the spray head panel.

[0093] For the sake of brevity, reference to a gas distribution channel or portion thereof at an angle in the radially inward direction is understood to refer to a gas distribution channel or portion thereof that extends along an axis gradually approaching the central axis of the spray head panel, wherein the axis has an increasing distance from a first side of the spray head panel and a decreasing distance from a second side of the spray head panel. Conversely, reference to a gas distribution channel or portion thereof at an angle in the radially outward direction is understood to refer to a gas distribution channel or portion thereof that extends along an axis gradually away from the central axis of the spray head panel, wherein the axis has an increasing distance from a first side of the spray head panel and a decreasing distance from a second side of the spray head panel.

[0094] It will be further understood that, in some embodiments, there may be a plurality of annular regions of this spray head panel, each characterized by an angled gas distribution channel that is inclined at different angles relative to the central axis of the spray head panel. For example, there may be a first annular region having a gas distribution channel that extends along an axis at an angle X relative to the central axis of the spray head panel, and a second annular region surrounding the first annular region having a gas distribution channel that extends along an axis at an angle Y relative to the central axis of the spray head panel, wherein X and Y are different.

[0095] Figure 24 illustrates a cross-sectional view of a portion of another exemplary spray head panel mounted in an exemplary semiconductor processing apparatus. The spray head panel 2412 of Figure 24 is similar to the spray head panel shown in Figure 4, wherein a subset of the angled gas distribution channels 2426' (shown as dashed lines in this figure to indicate their location "behind" the non-angled gas distribution channels 2426) is located near the outer edge, adjacent to the boundary between the peripheral region of the spray head panel 2412 and the inner region (as defined by the inner circumferential wall surface 2430). However, the spray head panel 2412 also has other subsets of the non-angled gas distribution channels 2426, which are located in substantially the same positions (e.g., along a circular path but between multiple positions where the gas distribution channels 2426' are located). Therefore, the outermost ring of the gas distribution channels may be characterized, for example, by the circumferentially alternating gas distribution channels 2426 and 2426'.

[0096] Figure 25 illustrates a cross-sectional view of a portion of a further exemplary spray head panel mounted in an exemplary semiconductor processing apparatus. The configuration of Figure 25 is similar to, and in some respects a combination of, the configurations of Figures 17 and 24, characterized in that the gas distribution channel 2526' closest to the central axis 2538 is obliquely radially inward and circumferentially located between the gas distribution channels 2526, which are not at an angle relative to the central axis 2538.

[0097] It will be apparent that the configurations shown in Figures 24 and 25 can also include multiple configurations, in which there are multiple concentric patterns of circumferential intermediate angled gas distribution channels and non-angled gas distribution channels, such as 2, 3, 4, etc., concentric rings of this circumferential intermediate angled gas distribution channel and non-angled gas distribution channel. In some extreme cases, this circumferential intermediate angled gas distribution channel and non-angled gas distribution channel can extend across the entire spray head panel (at an angle in any of the directions shown, for example, at an angle to the radially inward side (as shown in Figure 25) or at an angle to the radially outward side (as shown in Figure 25)). It will also be understood that in some embodiments, an additional configuration of circumferential intermediate angled gas distribution channels and non-angled gas distribution channels may be used, wherein the circumferential intermediate angled gas distribution channels and non-angled gas distribution channels with gas distribution channels angled radially inward may be located at the position farthest from the central axis of the spray head panel, or the circumferential intermediate angled gas distribution channels and non-angled gas distribution channels with gas distribution channels angled radially outward may be located at the position closest to the central axis of the spray head panel.

[0098] It will be appreciated that the configurations shown in Figures 24 and 25 may also include multiple configurations, in which there are multiple concentric patterns of circumferential intermediate beveled gas distribution channels, which extend along axes at different angles to the central axis of the spray head panel (and may not need to include non-beveled gas distribution channels), rather than along the same angle. For example, within a given annular region of the spray head panel, there may be two sets of beveled gas distribution channels, where the beveled gas distribution channels of one set are approximately circumferentially located between the beveled gas distribution channels of the other set. However, the beveled gas distribution channels in each set of beveled gas distribution channels within this annular region may extend along axes at different angles relative to the central axis of the spray head panel.

[0099] Figure 26 illustrates a cross-sectional view of a portion of a further exemplary spray head panel mounted in an exemplary semiconductor processing apparatus. In Figure 26, a plurality of gas distribution channels 2626 are configured as a plurality of concentric patterns, wherein the gas distribution channels 2626 of such concentric patterns are obliquely radially inward at a gradually decreasing angle relative to the central axis 2638 as the diameter of each circular pattern of the gas distribution channels 2626 increases. In other words, the angle between the central axis 2638 and the axis along which the gas distribution channels 2626 in each circular pattern are traversed decreases at least partially as the diameter of each circular pattern increases.

[0100] This configuration allows the gas flowing through the spray head to have a stronger flow tendency toward the wafer center in the center of the spray head panel, and less tendency to flow radially inward toward the periphery of the spray head.

[0101] Figure 27 illustrates a cross-sectional view of a portion of another exemplary spray head panel mounted in an exemplary semiconductor processing apparatus. In Figure 27, a plurality of gas distribution channels 2726 are configured as a plurality of concentric patterns, wherein the gas distribution channels 2726 of such concentric patterns are obliquely radially outward at an angle that gradually increases with respect to the central axis 2738 as the diameter of each circular pattern of the gas distribution channels 2726 increases. In other words, the angle between the central axis 2738 and the axis along which the gas distribution channels 2726 in each circular pattern are traversed increases at least partially with the increase of the diameter of each circular pattern.

[0102] This configuration allows the gas flowing through the spray head to have a stronger flow tendency toward the wafer periphery near the outer edge of the spray head panel, and less tendency to flow radially outward toward the center of the spray head.

[0103] It will also be understood that the configurations (e.g., those in Figures 26 and 27) can be combined with other configurations. For example, the spray head panel may have a first annular region in which non-oblique gas distribution channels are provided, and a second annular region surrounding the first annular region, wherein the gas distribution channels are configured as a plurality of concentric circular patterns, wherein the gas distribution channels of these concentric patterns are obliquely radially outward at a gradually increasing angle relative to the central axis as the diameter of each circular pattern of the gas distribution channel increases.

[0104] Figure 28 illustrates a cross-sectional view of a portion of an additional exemplary spray head panel mounted in an exemplary semiconductor processing apparatus. In Figure 28, a gas distribution channel 2826' follows a branch path 2862 through the spray head panel. In this example, the gas distribution channel 2826' is characterized by a plurality of portions, including an inlet portion 2868 and an outlet portion 2870. Each inlet portion 2868 may have a first end terminating at an inlet opening 2864 located on a first side 2832. Correspondingly, each outlet portion 2870 may have a first end terminating at a corresponding outlet opening 2866 located on a second side 2834. The inlet portion 2868 and outlet portion 2870 of the given gas distribution channel 2826' may also have a second end, which is fluidly connected to each other within the spray head panel 2812 to allow the gas flowing into the gas distribution channel 2826' to be subdivided into multiple airflows via the respective inlet opening 2864, wherein the airflows exit the gas distribution channel 2826' via the outlet opening 2866 of the gas distribution channel 2826'.

[0105] For the purposes of this disclosure, the term "fluid connection" is used with respect to volumes, chambers, orifices, etc., that can be connected to each other to form a fluid connection, just as the term "electrical connection" is used with components connected together to form an electrical connection. The term "fluid medium" (if used) can be used to refer to a component, volume, chamber, or orifice that is fluidly connected to at least two other components, volumes, chambers, or orifices, such that fluid flowing from one of these other components, volumes, chambers, or orifices to the other or one of these other components, volumes, chambers, or orifices will flow through the component of the "fluid medium" before reaching the other or one of these other components, volumes, chambers, or orifices. For example, if a pump system has a fluid between a reservoir and an outlet, then fluid flowing from the reservoir to the outlet will flow through the pump before reaching the outlet.

[0106] In the embodiment of Figure 28, the outlet portions 2870 are of equal length, which provides substantially equal flow resistance in each outlet portion 2870 and thereby distributes the flow substantially uniformly among the outlet portions 2870. However, it will be understood that other embodiments may feature branched gas distribution channels, in which the outlet portions may not all be of the same length. This example can be seen in Figure 29, which illustrates a cross-sectional view of a portion of another exemplary spray head panel mounted in an exemplary semiconductor processing apparatus. Figure 29 shows a gas distribution channel 2926', which follows a branched path and is characterized by outlet portions 2970 of unequal length. Thus, the outlet portion 2970 terminating at an outlet opening 2966 farther from the central axis 2938 is longer than the outlet portion 2970 terminating at an outlet opening 2966 closer to the central axis 2838.

[0107] This configuration allows gas to be supplied at a single flow rate to the inlet opening 2964 of the spray head panel 2912, and then the gas is subdivided into airflows with different flow rates through the multiple outlet openings 2966 of the spray head panel 2912.

[0108] It will also be understood that a gas distribution channel following a branching path, but shown as following a two-dimensional branching path in Figures 28 and 29, can also follow a three-dimensional branching path. For example, there may be three or four output ports extending outward from a single inlet port, and the branches of this branching path do not necessarily need to be all located in the same plane. It will be further understood that a gas distribution channel following a branching path can also be characterized by inlet and outlet ports having different cross-sectional dimensions. For example, the cross-sectional area of ​​the inlet port of a branched gas distribution channel may be larger than the cross-sectional area of ​​the outlet port to which it is fluidly connected, to allow sufficient gas flow into the inlet port and, after subdivision, to provide sufficient gas delivery through the outlet port. In some embodiments, the cross-sectional area of ​​one or more of the outlet ports of a given branched gas distribution channel may also differ from the cross-sectional areas of the other outlet ports of the branched gas distribution channel. For the sake of brevity, when referring to the cross-sectional area of ​​a gas distribution channel or a portion thereof, it should be understood that this cross-sectional area refers to the cross-sectional area in a corresponding cross-sectional plane perpendicular to a path or axis, along which the gas distribution channel or a portion thereof extends.

[0109] It will also be understood that while the gas distribution channels discussed herein are generally linear in nature (e.g., extending along a linear axis through holes in the spray head panel), some gas distribution channels may follow inherently non-linear paths. For example, branched gas distribution channels must follow at least one non-linear path due to branching within the path. However, it will also be understood that even in non-branched gas distribution channels, there may be examples of gas distribution channels following non-linear paths. For example, in some gas distribution channels, the channel may include an inlet portion and an outlet portion fluidly connected within the spray head panel; however, the inlet and outlet portions may extend along axes that are not parallel to each other, for example, one axis may be parallel to the central axis of the spray head panel, while the other axes may be at an angle to the central axis. Alternatively, these portions may extend along axes at different angles to the central axis of the spray head panel.

[0110] It will also be understood that while the gas distribution channels discussed in this paper can typically be provided as holes with a circular cross-section, other cross-sectional shapes can still be used. For example, if electrical discharge machining (EDM) is used (such as shaped EDM or rapid drilling EDM) instead of conventional mechanical drilling, the resulting holes do not need to be limited to a circular cross-section.

[0111] The aforementioned spray head panel includes various embodiments shown as a flat spray head panel, wherein, for example, the bottom and top surfaces of the spray head panel are flat. However, it should be understood that one or both of the top and / or bottom surfaces of this spray head panel may have undulating surfaces, i.e., have an uneven appearance (e.g., spray head panels of Figures 8 to 10, 14 to 16, or 21 to 23). For example, in some embodiments, the bottom surface of this spray head panel (the surface facing the wafer during processing operations) may be undulating, being closest to the wafer at the center (during use), and then gradually tilting away from the wafer as the radial distance from the central axis of the spray head panel increases.

[0112] The ordinal indicators (e.g., (a), (b), (c), etc.) used in this disclosure and the claims are to be understood not to express any particular order or sequence unless such order or sequence is explicitly specified. For example, if there are three steps indicated as (i), (ii), and (iii), it should be understood that, unless otherwise specified, these steps may be performed in any order (or even simultaneously, if there are no other prohibitions). For example, if step (ii) involves handling an element manufactured in step (i), then step (ii) can be considered to occur at some point after step (i). Similarly, if step (i) involves handling an element manufactured in step (ii), then the reverse can be understood. It should also be understood that the use of the ordinal indicator "first" (e.g., "first item") herein should not be interpreted as implying or implicitly suggesting that a "second" instance (e.g., "second item") must exist.

[0113] It should be understood that when the phrases "for each of one or more <items>" or "for each of one or more <items>" are used in this text, they include both single and plural groups of items. That is, the phrase "for each of..." in programming languages ​​refers to each item within any group of items referenced. For example, if the group of items referenced is a single item, then "each" will refer only to that single item (although in fact, the dictionary definition of "each" often defines the term as "each of two or more things"), and does not imply that at least two of these items must exist. Similarly, the terms "set" or "subset" should not be assumed to necessarily contain multiple items; it should be understood that a set or subset can contain only one member or multiple members (unless the context otherwise indicates).

[0114] It should be understood that all combinations of the foregoing concepts (assuming these concepts are not contradictory) are considered part of the subject matter of the invention disclosed herein. In particular, all combinations of the claimed subject matter presented at the very end of this disclosure are considered part of the subject matter of the invention disclosed herein. It should also be understood that the terms expressly used herein (which may also appear in any disclosure incorporated as references) should have the meaning most consistent with the specific concepts disclosed herein.

[0115] It should be further understood that while the above disclosure focuses on one or more specific exemplary implementations, it is not limited to the examples discussed, but is applicable to similar variations and mechanisms, and such similar variations and mechanisms are also considered to fall within the scope of this disclosure.

[0116] 100: Equipment 102: Semiconductor processing chamber 104: Wafer support 106: Wafer support area 108: Wafer 110: Sprayer head 112: Spray head panel 114: Gas distribution plate 116: Gas distribution port 118: Gas distribution plate channel 120: Threaded fasteners 122: Pole section 124: Backplate 126: Gas distribution channel 128: Annular circumferential wall 130: Inner circumferential wall surface 132: First side 134: Second side 136: Mean Midplane 138: Central Axis 140: Boundary 142: Internal Area 144: Peripheral Area 404: Wafer support 408: Wafer 410: Spray head 412: Spray head panel 426, 426': Gas distribution channels 428: Circumferential wall 430: Circumferential wall surface 432: First side 434: Second side 438: Central Axis 512: Spray head panel 526: Gas distribution channel 526': Inclined gas distribution channel 532: First side 534: Second side 538: Central Axis 1111: Circular area 1112: Spray head panel 1126': Gas distribution channel 1712: Sprayer head panel 1726, 1726': Gas distribution channel 1732: First Side 1734: Second Side 1738: Central Axis 1812: Sprayer head panel 1826, 1826': Gas distribution channel 2412: Spray head panel 2426: Non-oblique angle gas distribution channel 2426': Angled gas distribution channel 2430: Inner circumferential wall surface 2526, 2526': Gas distribution channels 2538: Central Axis 2626: Gas distribution channel 2638: Central Axis 2726: Gas distribution channel 2738: Central Axis 2812: Spray head panel 2826': Gas distribution channel 2832: First side 2834: Second side 2862: Branching Path 2864: Input port opening 2866: Output port opening 2868: Input Port Section 2870: Output Port Section 2912: Sprayer head panel 2926': Gas distribution channel 2938: Central Axis 2964: Input port opening 2966: Output port opening 2970: Output Port Section

Claims

1. An apparatus for semiconductor processing, the apparatus comprising: A spray head panel has a plurality of gas distribution channels extending from a first side of the spray head panel to a second side of the spray head panel opposite the first side, wherein: the first side and the second side define an average mid-plane of the spray head panel; the second side of the spray head panel is configured to face a wafer support located within a semiconductor processing chamber and is exposed to plasma; the gas distribution channels in a first subset of the plurality of gas distribution channels extend at least partially along an axis forming a first angle with respect to the average mid-plane of the spray head panel; the gas distribution channels in the first subset of the gas distribution channels are configured in a plurality of clusters; the clusters of the gas distribution channels in the first subset of the gas distribution channels are configured in a circular pattern; and the gas distribution channels in each cluster of the gas distribution channels in the first subset of the gas distribution channels are configured in a circular pattern within that cluster of gas distribution channels. The gas distribution channels in the second subset of the plurality of gas distribution channels extend along a direction parallel to the central axis and are arranged in the outermost circular pattern of the gas distribution channels. The circular pattern of the cluster of gas distribution channels in the first subset of the gas distribution channels is smaller than the outermost circular pattern of the gas distribution channels and is located radially inside the outermost circular pattern of the gas distribution channels.

2. The apparatus for semiconductor processing as claimed in claim 1, wherein the gas distribution channels in the first subset of gas distribution channels follow a linear path between the first side of the spray head panel and the second side of the spray head panel.

3. The apparatus for semiconductor processing as described in claim 1, wherein: The additional gas distribution channel subset of the plurality of gas distribution channels extends at least partially along an axis parallel to the central axis, and the gas distribution channels of the additional gas distribution channel subset are also located within the outermost circular pattern of the gas distribution channels.

4. The apparatus for semiconductor processing as claimed in claim 1, wherein the gas distribution channels in the first subset of gas distribution channels are arranged in a concentric plurality of circular patterns.

5. An apparatus for semiconductor processing as claimed in any of claims 2 to 4, wherein the angles between the average midplane and the isoaxial axis are the same, and wherein the gas distribution channels in the first subset of gas distribution channels extend at least partially along the isoaxial axis.

6. The apparatus for semiconductor processing as claimed in claim 4, wherein the angle between the average midplane and the isoaxial axis increases with the diameter of each of the concentric plurality of circular patterns, wherein the gas distribution channels in the first subset of gas distribution channels extend at least partially along the isoaxial axis.

7. The apparatus for semiconductor processing as described in any of claims 1 to 4, wherein each gas distribution channel in the first subset of gas distribution channels follows a linear path through the spray head panel.

8. An apparatus for semiconductor processing as claimed in any of claims 1, 3, and 4, wherein each gas distribution channel in the first subset of gas distribution channels follows a non-linear path through the spray head panel.

9. The apparatus for semiconductor processing as claimed in claim 1, wherein the first circular pattern and the outermost circular pattern are concentric.

10. The apparatus for semiconductor processing as claimed in claim 1, wherein a complex set of concentric rings of gas distribution channels exists within the second subset of gas distribution channels.

11. The apparatus for semiconductor processing as claimed in claim 1, further comprising the semiconductor processing chamber, the spray head, and the wafer support, wherein: The spray head is located above the wafer support within the semiconductor processing chamber. The wafer support has a circular wafer support area with a diameter D, which is configured to support a semiconductor wafer with a nominal diameter D. The spray head panel is mounted in the spray head such that the second side of the spray head panel faces the wafer support, and there is no structure between the spray head panel and at least 90% of the wafer support area.

12. The apparatus for semiconductor processing as claimed in claim 11 further includes a gas distribution plate located within the spray head and having a plurality of output ports configured to supply processing gas to the gas distribution channels.

13. An apparatus for semiconductor processing, the apparatus comprising: A spray head panel has a plurality of gas distribution channels extending from a first side of the spray head panel to a second side of the spray head panel opposite the first side, wherein: the first side and the second side define an average midplane of the spray head panel; the second side of the spray head panel is configured to face a wafer support located within a semiconductor processing chamber and exposed to plasma; each gas distribution channel in a first subset of the plurality of gas distribution channels extends at least partially along an axis forming a first angle with respect to a central axis perpendicular to the average midplane of the spray head panel; each gas distribution channel in the first subset of the plurality of gas distribution channels is arranged in a first circular pattern of gas distribution channels; and each gas distribution channel in the first subset of the plurality of gas distribution channels intersects the first side of the spray head panel at a position closer to the central axis than the position where the gas distribution channels intersect the second side of the spray head panel. Each gas distribution channel in the first gas distribution channel subset follows a branch path through the spray head panel and has an inlet opening on the first side of the spray head panel and two or more outlet openings on the second side of the spray head panel.

14. The apparatus for semiconductor processing as described in claim 13, wherein: Each branch path of the gas distribution channels in the first gas distribution channel subset has a plurality of portions, including an inlet portion and a plurality of outlet portions. The inlet portion of each gas distribution channel in the first gas distribution channel subset has a first end that terminates at the inlet opening of the gas distribution channel. Each outlet portion of each gas distribution channel in the first gas distribution channel subset has a first end that terminates at one of the outlet openings of the gas distribution channel. The inlet portion and the outlet portion of each gas distribution channel in the first gas distribution channel subset have a plurality of second ends that are fluidly connected to each other within the spray head panel. At least two of the outlet portions of each gas distribution channel in the first gas distribution channel subset are of equal length.

15. The apparatus for semiconductor processing as described in claim 13, wherein: Each branch path of the gas distribution channels in the first gas distribution channel subset has a plurality of portions, including an inlet portion and a plurality of outlet portions. The inlet portion of each gas distribution channel in the first gas distribution channel subset has a first end that terminates at the inlet opening of the gas distribution channel. Each outlet portion of each gas distribution channel in the first gas distribution channel subset has a first end that terminates at one of the outlet openings of the gas distribution channel. The inlet portion and the outlet portion of each gas distribution channel in the first gas distribution channel subset have a plurality of second ends that are fluidly connected to each other within the spray head panel. At least two of the outlet portions of each gas distribution channel in the first gas distribution channel subset are of unequal length.

16. The apparatus for semiconductor processing as described in claim 15, wherein: At least two of the output portions of each gas distribution channel in the first gas distribution channel subset have different cross-sectional areas in their respective cross-sectional planes, and each cross-sectional plane is a portion perpendicular to the branch path, which is connected to the respective output portion.

17. The apparatus for semiconductor processing as described in claim 16, wherein: The cross-sectional area of ​​the inlet portion of each gas distribution channel in the first gas distribution channel subset is different from the cross-sectional area of ​​one or more outlet portions of the gas distribution channel in the corresponding cross-sectional plane, and each cross-sectional plane is perpendicular to a portion of the branch path to which the corresponding portion is connected.

18. An apparatus for semiconductor processing, as described in any of claims 1 to 4, wherein: The gas distribution channels in the first gas distribution channel subset are located within the first annular region, the gas distribution channels in the second gas distribution channel subset of the plurality of gas distribution channels are located within the second annular region of the inner region, and the first annular region is different from the second annular region.

19. The apparatus for semiconductor processing as claimed in claim 18, wherein the gas distribution channels in the second subset of gas distribution channels extend along an axis parallel to the central axis.

20. The apparatus for semiconductor processing as described in claim 18, wherein: The second annular region has an inner boundary and an outer boundary. The first annular region and the second annular region are concentric, and the first annular region is located within the inner boundary.

21. The apparatus for semiconductor processing as described in claim 18, wherein: The first annular region has an inner boundary and an outer boundary. The first annular region and the second annular region are concentric, and the second annular region is located within the inner boundary.

22. The apparatus for semiconductor processing as claimed in claim 18, wherein a complex set of concentric rings of gas distribution channels exists within the second subset of gas distribution channels.

23. The apparatus for semiconductor processing as described in any of claims 1 to 4, further comprising the semiconductor processing chamber, the spray head, and the wafer support, wherein: The spray head is located above the wafer support, which is located within the semiconductor processing chamber. The wafer support has a circular wafer support area with a diameter D, which is configured to support a semiconductor wafer with a nominal diameter D. The spray head panel is mounted in the spray head such that the second side of the spray head panel faces the wafer support, and there is no structure between the spray head panel and at least 90% of the wafer support area.

24. The apparatus for semiconductor processing as claimed in claim 23 further includes a gas distribution plate located within the spray head and having a plurality of output ports configured to supply processing gas to the gas distribution channels.

25. An apparatus for semiconductor processing as claimed in any of claims 1 to 4 or 14 to 18, wherein the second side of the spray head panel has an uneven and undulating profile.

26. A spray head, comprising: Gas distribution plate; A spray head panel has a plurality of gas distribution channels extending from a first side of the spray head panel to a second side of the spray head panel opposite the first side, wherein: the first side of the spray head panel faces a gas distribution plate; when the spray head panel is mounted in a semiconductor processing chamber, the second side of the spray head panel faces away from the gas distribution plate; the spray head panel has an inner region and an outer region surrounding the inner region; the inner region of the spray head panel contains a first subset of the plurality of gas distribution channels; the gas distribution channels in the first subset of the gas distribution channels extend at least partially along a plurality of axes at an angle to an axis parallel to the central axis of the spray head panel; and the outer region of the spray head panel contains only a second subset of the plurality of gas distribution channels. The gas distribution channels in the second subset of the gas distribution channels extend along an axis parallel to the central axis of the spray head panel, and the gas distribution plate has a plurality of output ports configured to provide processed gas to the gas distribution channels.

27. The spray head of claim 26, wherein the second side of the spray head panel is undulating.

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