Substrate processing method, substrate processing device, and storage medium

Abstract

This invention provides a substrate processing method, a substrate processing apparatus, and a recording medium to improve the sensitivity of substrates using photoresist materials suitable for EUV (Extreme Ultraviolet) lithography during exposure. The substrate processing method involves irradiating the surface of a substrate with a photoresist film formed from an EUV lithography photoresist material onto light containing vacuum ultraviolet light before exposure processing, within a processing container.

Description

[Technical Field]

[0001] This invention relates to a substrate processing method, a substrate processing apparatus, and a recording medium. [Previous Technology]

[0002] Patent Document 1 discloses an auxiliary exposure apparatus that improves the accuracy of the film thickness or linewidth or the in-plane uniformity of the photoresist pattern by irradiating a photoresist film formed on a substrate with ultraviolet light that is different from the exposure treatment. [Preferred Art Document] [Patent Document]

[0003] Patent Document 1: Japanese Patent Application Publication No. 2013-186191 [Summary of the Invention]

[0004] [The problem that this invention aims to solve]

[0005] This invention provides a technique to improve the sensitivity of substrates exposed to photoresist materials suitable for EUV (Extreme Ultraviolet) lithography. [Technical Means for Solving the Problem]

[0006] One aspect of the substrate processing method of the present invention involves irradiating the surface of a substrate on which a photoresist film formed by an EUV lithography photoresist material is formed with light containing vacuum ultraviolet light before exposure processing within a processing container. [Effects of the Invention]

[0007] According to the present invention, a technique can be provided to improve the sensitivity of a substrate using a photoresist material suitable for EUV lithography during exposure.

Implementation Method

[0009] The following describes various exemplary embodiments.

[0010] According to an exemplary embodiment of the substrate processing method, the surface of a substrate on which an EUV photoresist film is formed is irradiated with light containing vacuum ultraviolet light before exposure processing in a processing container.

[0011] By irradiating the surface of a substrate with a photoresist film formed by EUV lithography photoresist material with light containing vacuum ultraviolet light, chemical bonds in the photoresist film are broken, resulting in an increase in the sensitivity of the photoresist film during exposure.

[0012] The light containing vacuum ultraviolet light is light containing at least a portion of the frequency domain of wavelengths from 100 nm to 200 nm. As described above, by irradiating the photoresist film with light containing at least a portion of the frequency domain of wavelengths from 100 nm to 200 nm, chemical bonds in the photoresist film break in many places, thereby increasing the sensitivity of the photoresist film during exposure.

[0013] The amount of light per unit area of ​​the substrate surface contained in vacuum ultraviolet light is smaller than the amount of light contained in vacuum ultraviolet light irradiated after the exposure process. In the case of irradiation with vacuum ultraviolet light before exposure, even a small amount of light can penetrate the photoresist film, thereby improving the sensitivity.

[0014] The light is irradiated when the substrate temperature is approximately the same as the ambient gas temperature. When the light is irradiated when the substrate temperature is approximately the same as the ambient gas temperature, changes in the properties of the photoresist film caused by changes in substrate temperature can be prevented.

[0015] The processing container is irradiated with light containing vacuum ultraviolet light while the processing container is under depressurization. By irradiating the processing container with light containing vacuum ultraviolet light while the processing container is under depressurization, the penetration of the light containing vacuum ultraviolet light into the photoresist film is promoted, thereby increasing the sensitivity.

[0016] After depressurizing the processing container to a predetermined vacuum level, the pressure inside the processing container is increased to a predetermined pressure below atmospheric pressure, and then the container is irradiated with light containing vacuum ultraviolet light. By irradiating the processing container with light containing vacuum ultraviolet light after depressurizing it to a predetermined vacuum level and then increasing the pressure to a predetermined pressure, degassing (gas release) from the substrate surface can be suppressed.

[0017] After irradiation with light containing vacuum ultraviolet light, an exposure process is performed without heat treatment. By performing the exposure process without heat treatment, overheating of the substrate can be prevented.

[0018] A heating process is performed after irradiation with light containing vacuum ultraviolet light and before exposure processing. By performing a heating process before exposure processing, the reaction of the photoresist film on the substrate can be promoted, and insufficient exposure can be prevented.

[0019] Evaluate the surface of the substrate that has been irradiated with light containing vacuum ultraviolet light, and change the processing conditions for the substrate accordingly. As described above, by changing the processing conditions for the substrate according to the evaluation results of the substrate surface, for example, appropriate conditions can be selected in response to "the changes in the surface caused by irradiation with light containing vacuum ultraviolet light".

[0020] Alternatively, the light containing vacuum ultraviolet light emitted from the light source can be transmitted through the light adjustment member, thereby irradiating the substrate surface in a state where the difference in intensity distribution of light of each wavelength is smaller than before transmission. At this time, by transmitting the light through the light adjustment member, the light containing vacuum ultraviolet light can be irradiated onto the substrate in a state where the difference in intensity distribution of light of each wavelength is smaller than before transmission. As a result, the photoresist film can be irradiated with light in a state where the proportion of light of each wavelength is closer to uniform, thus improving the effect of increasing the sensitivity when exposing the photoresist film.

[0021] In another exemplary embodiment, the present invention relates to a recording medium having a computer-readable recording medium having a program for causing a device to perform the above-described substrate processing method.

[0022] One exemplary embodiment relates to a substrate processing apparatus, the substrate processing apparatus comprising: a processing container; a light source unit for irradiating a substrate having a photoresist film formed of an EUV lithography photoresist material formed thereon with light containing vacuum ultraviolet light within the processing container; and a control unit for controlling the light source unit to irradiate the substrate with the light containing vacuum ultraviolet light before exposure processing of the substrate.

[0023] By irradiating the surface of a substrate on which a photoresist film formed by EUV lithography photoresist material is formed with light containing vacuum ultraviolet light emitted from a light source, chemical bonds in the photoresist film are broken, resulting in an increase in the sensitivity of the photoresist film during exposure.

[0024] The light containing vacuum ultraviolet light is light containing at least a portion of the frequency domain of wavelengths from 100 nm to 200 nm. As described above, by irradiating the photoresist film with light containing at least a portion of the frequency domain of wavelengths from 100 nm to 200 nm, chemical bonds in the photoresist film break in many places, thereby increasing the sensitivity of the photoresist film during exposure.

[0025] The control unit controls the light source unit so that the amount of light per unit area of ​​the substrate surface containing vacuum ultraviolet light is smaller than the amount of light when the substrate is irradiated with vacuum ultraviolet light after the exposure process. When the substrate is irradiated with vacuum ultraviolet light before exposure, even a small amount of light can penetrate the photoresist film, thus improving the sensitivity.

[0026] The control unit controls the light source unit to irradiate the substrate when the temperature of the substrate is approximately the same as the temperature of the ambient gas. When irradiating the substrate when the temperature of the substrate is approximately the same as the temperature of the ambient gas, changes in the properties of the photoresist film caused by changes in the substrate temperature can be prevented.

[0027] The control unit controls the light source unit to irradiate the processing container with light containing vacuum ultraviolet light while the processing container is under depressurization. By irradiating the processing container with light containing vacuum ultraviolet light while the processing container is under depressurization, the penetration of the light containing vacuum ultraviolet light into the photoresist film is promoted, thereby increasing the sensitivity.

[0028] The present invention further includes a light adjustment member disposed on the light path of the vacuum ultraviolet light emitted from the light source toward the substrate; the light adjustment member causes the vacuum ultraviolet light to be incident on the substrate surface in a state where the difference in intensity distribution of each wavelength of light is smaller than before transmission. At this time, by transmitting through the light adjustment member, the vacuum ultraviolet light can be used to irradiate the substrate in a state where the difference in intensity distribution of each wavelength of light is smaller than before transmission. As a result, the photoresist film can be irradiated with light in a state where the proportion of each wavelength of light is closer to uniform, thus improving the effect of increasing the sensitivity of the photoresist film during exposure.

[0029] This substrate processing apparatus is disposed within the stacked section of the processing module stack in the coating and developing apparatus, at a location between the photoresist film forming module and the exposure apparatus that forms the transport path for the substrate. With this configuration, the substrate can be transported according to the sequence of substrate processing, and the processing performed by the substrate processing apparatus can be carried out. Therefore, it is possible to further prevent a decrease in the operating efficiency of the coating and developing apparatus and to perform the processing performed by the substrate processing apparatus.

[0030] Hereinafter, with reference to the figures, various exemplary embodiments will be described in detail. In addition, in each figure, the same or equivalent parts will be given the same symbols.

[0031] [Configuration of the Substrate Processing Apparatus] FIG1 is a schematic diagram (longitudinal side view) of the substrate processing apparatus of this embodiment. The substrate processing apparatus 1 shown in FIG1 irradiates the workpiece W with light for processing. For example, the substrate processing apparatus 1 is configured to irradiate a photoresist film or photoresist pattern formed on the surface of the workpiece W with light including vacuum ultraviolet light (VUV light). By irradiating the photoresist film with light including vacuum ultraviolet light by the substrate processing apparatus 1, the sensitivity of such photoresist films during exposure can be improved. In addition, by irradiating the photoresist pattern with light including vacuum ultraviolet light, the surface roughness of the photoresist pattern obtained by exposure and development process can also be improved.

[0032] The workpiece W to be processed is, for example, a substrate, or a substrate that has been formed into a state with films and circuits by performing a predetermined process. The substrate included in the workpiece W is, for example, a silicon-containing wafer. The workpiece W (substrate) is, for example, in the shape of a circular plate, but it may also have a part of the circle notched, or be in a shape other than a circle, such as a polygon. The workpiece W to be processed may also be a glass substrate, a mask substrate, an FPD (Flat Panel Display), or an intermediate obtained by performing a predetermined process on such substrates.

[0033] The substrate processing apparatus 1 has the function of irradiating the surface of a workpiece W with light L1 for surface treatment. For example, after forming a photoresist film on a substrate on a SOC film (Silicon-on-Carbon) and an SOG film (Silicon-on-Glass) on the SOC film, an exposure and development process is performed to form a photoresist pattern with a predetermined pattern. The photoresist pattern is a mask pattern formed on the underlying films, namely the SOC film and the SOG film, by etching these underlying films. The substrate processing apparatus 1 has, for example, the function of improving the surface roughness of the photoresist pattern by irradiating the surface of the workpiece W on which the photoresist pattern is formed with light L1 for surface treatment. On the other hand, in this embodiment, the following situation will be described: the workpiece W after the photoresist film is formed but before the exposure and development process is performed is irradiated with light L1 for processing performed by the substrate processing apparatus 1.

[0034] Furthermore, in this embodiment of the substrate processing apparatus 1, the photoresist material used to form the photoresist pattern is described as "an EUV lithography material suitable for using an EUV laser as an exposure light source". EUV (Extreme Ultraviolet) laser is a laser with a wavelength of 13.5 nm. The workpiece W on which a photoresist film formed by the photoresist material is formed is irradiated with light containing the aforementioned VUV light under predetermined conditions using the substrate processing apparatus 1. This improves the sensitivity in subsequent exposure processing. Furthermore, it improves the surface roughness of the photoresist when forming the photoresist pattern through exposure and development processing. In addition, the surface roughness can also be improved for patterns obtained by etching this photoresist pattern as a mask.

[0035] The various parts of the substrate processing apparatus 1 will be described. As shown in FIG1, the substrate processing apparatus 1 includes a processing chamber 20, a light irradiation mechanism 40 (light source unit), and a controller 100 (control unit).

[0036] The processing chamber 20 includes a housing 21 (processing container), a transport port 22, a rotating support 25, a gas supply unit 30, and a gas discharge unit 32. The housing 21, for example, is part of a vacuum container installed in the atmospheric environment, configured to accommodate a workpiece W transported by a transport mechanism (not shown). That is, the housing 21 functions as a processing container for processing the workpiece W inside. The substrate processing apparatus 1 processes the workpiece W while it is housed within the housing 21. A transport port 22 is formed on the side wall of the housing 21. The transport port 22 is an opening for moving the workpiece W into and out of the housing 21. The transport port 22 is opened and closed by a gate valve 23.

[0037] The rotation support 25 has the following function: within the housing 21, it rotates and holds the workpiece W according to the instruction of the controller 100. The rotation support 25 includes, for example, a holding part 26 and a rotation drive part 27. The holding part 26 supports the central portion of the workpiece W, which is horizontally arranged with the surface having the photoresist pattern formed on it facing upwards, for example, by vacuum adsorption. The rotation drive part 27 has the following function: it causes the holding part 26 holding the workpiece W to rotate together with the workpiece W about a vertical axis A1. The rotation drive part 27 is, for example, a rotation actuator that uses an electric motor as a power source.

[0038] The gas supply unit 30 is configured to supply an inert gas (e.g., argon, nitrogen, etc.) into the housing 21 via a through hole 21a formed in the housing 21. The gas supply unit 30 includes a gas source 30a, a valve 30b, and a pipe 30c. The gas source 30a stores the inert gas and functions as a source of inert gas supply. The valve 30b is activated according to an action signal from the controller 100 to open and close the pipe 30c. The pipe 30c is sequentially connected to the gas source 30a, the valve 30b, and the through hole 21a from the upstream side.

[0039] The gas discharge section 32 discharges gas from the housing 21 through a through hole 21b formed in the housing 21. The gas discharge section 32 includes a vacuum pump 32a and a piping 32c. The vacuum pump 32a discharges gas from inside the housing 21. The piping 32c connects the through hole 21b to the vacuum pump 32a.

[0040] The ambient gas adjustment unit 34 adjusts the environment inside the housing 21 to an atmospheric environment via a through hole 21c formed in the housing 21. The ambient gas adjustment unit 34 includes a valve 34b and a pipe 34c. The valve 34b operates according to an action signal from the controller 100, opening and closing the pipe 34c. The pipe 34c connects the through hole 21c to the atmospheric environment. That is, when the valve 34b is opened, the environment inside the housing 21 is adjusted to an atmospheric environment.

[0041] The light irradiation mechanism 40 includes a housing 41, a light source 42, and a switch 43. The housing 41 is disposed on the upper part of the housing 21. A plurality of light source units 42 are housed inside the housing 41. A lamp 44 is disposed inside the light source unit 42, and light is emitted from below the light source unit 42 by means of the light emitted by the lamp 44. The lower end face of the light source unit 42 may also be disposed inside the housing 21, for example.

[0042] Figure 2 is a top view showing one example of the arrangement of the light source unit 42. When viewed from above, the light source unit 42 is arranged along two concentric circles centered on the axis A1 of the rotation axis of the holding part 26. Specifically, four light source units 42 are arranged circumferentially along the inner circle, and eight light source units 42 are arranged circumferentially along the outer circle. Furthermore, the light source units 42 arranged in this way illuminate the entire surface of the workpiece W held by the holding part 26. Additionally, a switch 43 switches the light source of the light source unit 42 on and off. The operation of the switch 43 is controlled by the controller 100. This is just one example of the arrangement of the light source unit 42; it can be modified as appropriate.

[0043] The lamp 44 within the light source unit 42, for example, illuminates light with a wavelength range of 115 nm to 400 nm. For example, the light source unit 42 illuminates light that forms a continuous spectrum of 115 nm to 400 nm. "Light forming a continuous spectrum" can be light that includes at least a portion (e.g., a wavelength width of 10 nm or more) of the frequency range encompassed by wavelengths of 100 nm to 200 nm (corresponding to the wavelength range of vacuum ultraviolet (VUV) light).

[0044] Furthermore, a continuous spectrum refers to a spectrum that extends continuously within a specific wavelength range (in this embodiment, a wavelength width of 10 nm or more), and is a spectrum distinct from a line spectrum (bright line spectrum) of a specific wavelength. Additionally, light forming a continuous spectrum encompassing a portion of the wavelength range of 100 nm to 200 nm can also be light forming a continuous spectrum within the aforementioned wavelength range of 115 nm to 400 nm. Furthermore, the light emitted from the light source 42 does not necessarily form a continuous spectrum across its entire wavelength range; it can also form a continuous spectrum within at least a portion of the wavelength range. For example, the light emitted from the light source 42 effectively achieves the effect produced by the light irradiated from the light source 42 described later by forming a continuous spectrum within a wavelength range overlapping with the wavelength range of 100 nm to 200 nm (corresponding to the wavelength range of vacuum ultraviolet light (VUV light)).

[0045] Vacuum ultraviolet light (VUV light) is generally light with a wavelength range of 10 nm to 200 nm. However, when using long-wavelength light (100 nm or more) from the light source 42, a higher processing effect can be obtained from the substrate processing apparatus 1, that is, a higher modification effect on the photoresist film. Short-wavelength light (light with a wavelength shorter than 100 nm) is less likely to penetrate into the interior of the photoresist film, and therefore may not be able to achieve a modification effect on the overall photoresist film.

[0046] Furthermore, the main wavelength range of the light emitted from the light source 42 can be made different, for example, from the wavelength of the light used to expose the photoresist film. For example, the wavelength of the light used for exposure, such as EUV (Extreme Ultraviolet) laser, is 13.5 nm. If EUV light, the wavelength used for exposing the photoresist film, is used in the substrate processing apparatus 1, the workpiece W may be being exposed while the substrate processing apparatus 1 is processing. Therefore, by making the main wavelength range of the light emitted from the light source 42 100 nm or more, an effect produced by using light of a different wavelength than that used for EUV light exposure can be obtained.

[0047] Furthermore, the light emitted from the light source 42 may include not only VUV light but also near-ultraviolet light (near-ultraviolet light) with wavelengths longer than VUV light. For example, the light emitted from the light source 42 may include light in the frequency range with wavelengths below 160 nm. In this way, the light emitted from the light source 42 at least includes light in the wavelength range defined as VUV light. Therefore, the light emitted from the light source 42 is sometimes referred to as "light containing VUV light".

[0048] The lamp 44 provided in the light source section 42, for example, is a deuterium lamp, and may also be configured to irradiate VUV light with a wavelength of 200 nm or less. The wavelength of the peak of the continuous spectrum may be, for example, 160 nm or less, or 150 nm or more. Furthermore, by making the wavelength of the peak in the spectrum of the light from the light source section 42 248 nm or less, the light from the light source section 42 has the effect of increasing the wavelength range of VUV light included in the light. The light from the light source section 42 may also be light that forms a continuous spectrum having a plurality of sub-peaks. The sub-peaks may be 248 nm or less, or for example, 160 nm or less. In addition, the light from the light source section 42 is not limited to a continuous spectrum, for example, it may include light with one or more wavelengths in the wavelength range of 115 nm to 400 nm. "Light including a specific wavelength range" means light including one or more wavelengths contained in that wavelength range.

[0049] Because the wavelength range of the light spectrum irradiated from the light source 42 is relatively wide, the photoresist film on the workpiece W receives energy from light of various wavelengths. As a result, various reactions occur on the surface of the photoresist film. Specifically, by breaking the chemical bonds at various positions in the molecules constituting the photoresist film, the sensitivity to exposure of the photoresist film is increased. Therefore, even with a small exposure amount, appropriate exposure is still performed. Furthermore, since various compounds are generated by breaking the aforementioned chemical bonds, the orientation of the molecules present in the photoresist film before light irradiation is eliminated. As a result, the surface free energy of the photoresist film is reduced, and the internal stress is reduced. That is, by using the light source 42 as the light source, the fluidity of the photoresist film surface is easily increased, resulting in an improved surface roughness effect when forming photoresist patterns.

[0050] The controller 100 of the substrate processing apparatus 1 controls the rotation support 25, the gas supply 30, the gas exhaust 32, and the light irradiation mechanism 40. As illustrated in FIG3, the controller 100 has a functional configuration (hereinafter referred to as "functional module") including an irradiation control unit 111, a gas supply control unit 112, an exhaust control unit 113, and an inlet / outlet control unit 114. These functional modules are used to divide the functions of the controller 100 into multiple modules for convenience, and do not mean that the hardware constituting the controller 100 must be divided into such modules.

[0051] The illumination control unit 111 controls the light illumination mechanism 40 to illuminate the light containing VUV light at a desired time. For example, the illumination control unit 111 controls the light illumination mechanism 40 to light up all the light source units 42 before illumination. In addition, the illumination control unit 111 controls the light illumination mechanism 40 to turn off all the light source units 42 after illumination.

[0052] The gas supply control unit 112 controls the valve 30b to supply inert gas into the housing 21 through the through hole 21a. The exhaust control unit 113 controls the vacuum pump 32a to exhaust the gas inside the housing 21 to the outside through the through hole 21b.

[0053] The inlet / outlet control unit 114 controls the gate valve 23 to open and close the transport port 22 as the workpiece W is moved into the housing 21 and out of the housing 21, and controls the rotating support unit 25 to switch the holding and releasing of the workpiece W performed by the holding unit 26.

[0054] The controller 100 comprises one or more control computers. For example, the controller 100 includes the circuit 120 shown in FIG. 4. The circuit 120 includes one or more processors 121, memory 122, storage 123, and input / output ports 124. The storage 123, such as a hard disk, is a recording medium that can be read by a computer. The recording medium records a program for causing the substrate processing apparatus 1 to perform the substrate processing steps described later, and may be a removable medium such as a non-volatile semiconductor memory, magnetic disk, or optical disk. The memory 122 temporarily records the program loaded from the recording medium in the storage 123 and the calculation results generated by the processors 121. The processors 121 and the memory 122 cooperate to execute the above-mentioned program, thereby constituting the above-mentioned functional modules. The input / output ports 124, in accordance with the instructions from the processors 121, perform electrical signal input / output between the controller 100 and the various parts controlled by the controller 100.

[0055] In addition, the hardware configuration of the controller 100 is not necessarily composed of functional modules by programming. For example, each functional module of the controller 100 may also be composed of dedicated logic circuits or integrated ASI (Application Specific Integrated Circuit).

[0056] [Configuration of the Substrate Processing Apparatus] An example of the configuration of the substrate processing apparatus 1 described above will be explained with reference to Figures 5 and 6. Figure 5 is an example of a schematic perspective view of the coating and developing apparatus 200 equipped with the substrate processing apparatus 1. The coating and developing apparatus 200 is configured with the following blocks arranged in a straight line: a carrier block S1 for moving a carrier C containing, for example, 25 workpieces W in a sealed container; a processing block S2 for processing the workpieces W; and an interface block S3. An exposure apparatus S4 for performing immersion exposure can also be connected to the interface block S3. The coating and developing apparatus 200 can also function as a substrate processing system connected to the exposure apparatus S4.

[0057] In the carrier block S1, for example, a mounting platform 201 is provided for mounting the carrier C; and an opening / closing part 202 is provided on the wall surface in front of the mounting platform 201 when viewed from it. Furthermore, a transfer arm is provided inside for removing the workpiece W from the carrier C via the opening / closing part 202, and for transferring the workpiece W to a transfer module. Additionally, the location where the workpiece W can be mounted is described as a module, and modules within these modules that perform processes such as heating, liquid treatment, gas supply, or edge exposure on the workpiece W are described as processing modules. Furthermore, modules within the processing modules that supply chemical liquid or cleaning liquid to the workpiece W are described as liquid treatment modules.

[0058] The processing block S2, which is connected to the carrier block S1, includes a first unit block B1 to a sixth unit block B6 for liquid treatment of the workpiece W, which are stacked together sequentially from below. Figure 6 is an example of a schematic longitudinal side view of the processing block S2. The first unit block B1 and the second unit block B2 have the same configuration, and form an anti-reflection film and a photoresist film for the workpiece W.

[0059] Modules for forming a protective film for immersion exposure and cleaning the back side of the workpiece W are provided in the third unit block B3 and the fourth unit block B4. Furthermore, modules for developing the workpiece W after immersion exposure are provided in the fifth unit block B5 and the sixth unit block B6. As described above, unit blocks for performing the same treatment on the workpiece W are provided in two layers each. The substrate processing apparatus 1 is configured to span across unit blocks B3 and B4 in the vertical direction.

[0060] In each unit block B1 to B6, a liquid handling module, a heating module, a handling means for the unit block (i.e., a main robotic arm), and a handling area for the main robotic arm to move are provided. In each unit block B1 to B6, the main robotic arm independently handles and processes the workpiece W. The handling area is a straight handling path extending from the carrier block S1 to the interface block S3 in the center of the unit blocks B1 to B6. On the right side of the handling area when viewed from the carrier block S1 to the interface block S3, the processing unit 210 shown in FIG6 is provided. The processing unit 210 is provided in each unit block B1 to B6. The processing unit 210 of each unit block B1 to B6 constitutes a stacked part in which the processing modules are stacked.

[0061] Specifically, in the liquid processing unit 210 of unit block B1, antireflective film forming modules BCT1 and BCT2 and photoresist film forming modules COT1 and COT2 are provided. Each of the antireflective film forming modules BCT1 and COT2 has a rotating suction cup 211 that adsorbs and holds the center of the back side of the workpiece W and can rotate freely. Furthermore, a processing cup 212 is provided around the rotating suction cup to suppress chemical liquid scattering. Additionally, nozzles for supplying the chemical liquid for antireflective film forming can also be provided in the antireflective film forming modules BCT1 and BCT2, which are shared by these modules. The photoresist film forming modules COT1 and COT2 may have the same configuration as the antireflective film forming modules BCT1 and BCT2, except that the processing liquid supplied from the nozzle is a photoresist liquid.

[0062] The liquid processing unit 210 in the second unit block B2 has the same configuration as the first unit block B1, and is provided with anti-reflection film forming modules BCT3 and BCT4 and photoresist film forming modules COT3 and COT4.

[0063] Furthermore, in the third unit block B3, a substrate processing apparatus 1 is provided to replace the anti-reflection film forming modules BCT1 and BCT2 in the first unit block B1. Additionally, it includes back-side cleaning modules BST1 and BST2 to replace the photoresist film forming modules COT1 and COT2. The back-side cleaning modules BST1 and BST2 are provided with nozzles that supply cleaning fluid to the back side and chamfered edges of the workpiece W to clean the back side of the workpiece W, replacing nozzles that supply chemical liquid to the surface of the workpiece W. Apart from these differences, it has the same configuration as the anti-reflection film forming module BCT. Furthermore, the fourth unit block B4 has the same configuration as the aforementioned third unit block B3, and includes the substrate processing apparatus 1 and the back-side cleaning modules BST3 and BST4.

[0064] The fifth unit block B5 has a configuration similar to that of unit block B1, except that it includes developing modules DEV1 to DEV4, replacing the anti-reflection film forming module BCT1 and the photoresist film forming module COT. The developing module DEV has the same configuration as the photoresist film forming module COT, except that it supplies developer to the workpiece W instead of photoresist. The sixth unit block B6 has the same configuration as unit block B5, and includes developing modules DEV5 to DEV8.

[0065] The substrate processing apparatus 1 is configured to extend vertically through a third unit block B3 and a fourth unit block B4, including a space A2 connecting the third unit block B3 and the fourth unit block B4 together. A processing chamber 20 and a light irradiation mechanism 40 of the substrate processing apparatus 1 are provided within space A2. Furthermore, a transport port 22 of the substrate processing apparatus 1 is provided on the central transport area side. Additionally, a partition wall 220 may be provided between the space A2 where the substrate processing apparatus 1 is disposed and the space where the back-side cleaning modules BST1 to B4 are disposed, separating the two units, in the third unit block B3 and the fourth unit block B4.

[0066] The reason for arranging the substrate processing apparatus 1 across two unit blocks in the vertical direction (where other modules are set to two layers) is to ensure sufficient distance between the workpiece W and the light source unit 42. As mentioned above, the light source unit 42 is provided in the substrate processing apparatus 1 to irradiate the workpiece W with light including VUV light. At this time, if the distance between the light source unit 42 and the workpiece W is close, heat from the light source unit 42 will propagate to the workpiece W, which may cause the temperature of the workpiece W to rise. The temperature change of the workpiece W may affect the processing of the workpiece W. Therefore, as mentioned above, it can be configured to ensure a larger space (two unit blocks in the vertical direction) compared to other modules, so as to ensure sufficient distance between the workpiece W and the light source unit 42. Furthermore, if the distance between the light source 42 and the workpiece W is shortened to reduce the VUV light intensity from the light source 42 to a level that does not affect the temperature of the workpiece W, there is a risk that the output of the VUV light from the light source 42 will be unstable, making it impossible to stably irradiate the workpiece W with light of the desired wavelength characteristics. For these reasons, we have specifically designed the substrate processing device 1 to occupy a larger height range than other processing modules that are adjacent vertically or horizontally.

[0067] Furthermore, the location of the substrate processing apparatus 1 is only one example, but is not limited thereto. For example, in unit blocks B1 and B2, a module for heating the workpiece W can be provided on the opposite side of the transport area sandwiched between the photoresist film forming modules COT1 and COT2. The substrate processing apparatus 1 can also be provided at this location, provided that the processing of the workpiece W in the substrate processing apparatus 1 is performed after the processing of the photoresist film forming module COT. In addition, the workpiece W processed by the substrate processing apparatus 1 is transported, for example, to the back cleaning module BST. At least, the processing of the workpiece W by the substrate processing apparatus 1 is performed after the processing of the photoresist film forming module COT and before the transport to the exposure apparatus S4. Therefore, by providing the substrate processing apparatus 1 at a location corresponding to the "transport path of the workpiece W from the photoresist film forming module COT to the exposure apparatus S4", the efficiency of transporting the workpiece W can be improved.

[0068] [Substrate Processing Method] Next, a substrate processing method including the operation of the substrate processing apparatus 1 will be described. In the substrate processing method shown in this embodiment, a workpiece W on which a photoresist film is formed is irradiated with light including VUV light before exposure using the substrate processing apparatus 1. Three examples of substrate processing methods including these steps are given below.

[0069] [Substrate Processing Method - 1] First, referring to FIG7, an explanation will be given for the first example. FIG7 shows the steps for forming a photoresist pattern on the workpiece W in a flowchart.

[0070] Step S01: A photoresist liquid is coated onto the surface of the workpiece W to form a photoresist film. The method for forming the photoresist film is not particularly limited. Alternatively, a lower layer film may be formed on the surface of the workpiece W before the photoresist film is formed. In this stage, a photoresist film is formed on the entire surface of the workpiece W.

[0071] In step S02, the substrate processing apparatus irradiates the surface of the workpiece W on which the photoresist film is formed with light containing VUV light using the substrate processing apparatus 1. The workpiece W held by the housing 21 is irradiated with light L1 from the light source 42 (light L1 from the lamp 44). Light L1 is light containing VUV light. In the following embodiment, the "light L1 containing VUV light" emitted from the light source 42 is sometimes referred to as VUV light. Hereinafter, the operation of the substrate processing apparatus 1 in step S02 will be described.

[0072] Figure 8 is a graph showing the general change of pressure inside the housing 21 over time. The horizontal axis of Figure 8 represents the elapsed time during processing, and the vertical axis represents the pressure (unit: Pa) inside the housing 21, which serves as the processing container. It is roughly displayed on a logarithmic axis. First, with the operation of the gas supply unit 30 and the gas discharge unit 32 stopped, the workpiece W is moved into the housing 21 by the transport mechanism. If the workpiece W is placed on the holding part 26 of the rotating support unit 25, the gate valve 23 is closed, making the housing 21 airtight. At this time, the housing 21 becomes, for example, an atmospheric environment at standard atmospheric pressure (time t0 in Figure 8). Subsequently, the pressure inside the housing 21 is reduced by the operation of the gas discharge unit 32.

[0073] When the pressure inside the housing 21 reaches 1 Pa (time t1), the pressure is maintained for a predetermined time. After briefly maintaining the 1 Pa pressure reduction state (time t2), the valve 30b of the gas supply unit 30 is opened to supply Ar gas into the housing 21. This creates an Ar atmosphere within the housing 21, causing the pressure inside the housing 21 to rise. Furthermore, the depressurization rate and the pressurization rate can be controlled by the operation of the gas supply unit 30 and the gas discharge unit 32. Moreover, the depressurization rate and the pressurization rate can be constant or can be varied midway.

[0074] By using Ar gas, for example, to bring the pressure inside the housing 21 to 10000 Pa, while maintaining the pressure inside the housing 21, light including VUV light is irradiated onto the workpiece W from the light source unit 42 (time t3). If light is irradiated from the light source unit 42 for a predetermined time, for example 30 seconds, then the light irradiation stops (time t4). Afterward, the operation of the gas supply unit 30 and the gas exhaust unit 32 is stopped, and after the pressure inside the housing 21 returns to the atmospheric environment, the workpiece W is removed from the housing 21. In this manner, the processing of the workpiece W performed by the substrate processing apparatus 1 is completed.

[0075] The amount of light per unit area (also referred to as cumulative irradiation dose or dosage) when irradiating the surface of the workpiece W with VUV light after irradiating the photoresist pattern is smaller. Specifically, compared to irradiating the surface of the workpiece W with VUV light after forming the photoresist pattern through exposure and development to improve surface roughness, the amount of VUV light irradiation is adjusted to 1% to 2%. For example, when irradiating the photoresist pattern with VUV light, the amount of VUV light can be adjusted to 25 mj / cm² to 100 mj / cm². On the other hand, when irradiating the photoresist film before exposure, the amount of VUV light can be adjusted to 1 mj / cm² to 2 mj / cm². As described above, when irradiating the photoresist film before exposure, the amount of irradiated light can be adjusted to a small amount.

[0076] During irradiation with VUV light, the temperature rise of the workpiece W can be suppressed. As described above, if the intensity of the VUV light is reduced and the pressure inside the housing 21 is adjusted to a lower pressure than the higher pressure, the temperature rise of the workpiece W itself is prevented. Therefore, the irradiation with VUV light can be performed when the temperature of the workpiece W is approximately the same as the ambient gas temperature (e.g., the temperature outside the housing 21). When irradiation is performed when the temperature of the workpiece W is approximately the same as the ambient gas temperature, the properties of the photoresist film are prevented from being altered by the temperature change of the workpiece W. For example, the temperature change of the workpiece W during irradiation with VUV light can be suppressed to less than 1°C relative to the external temperature (the temperature outside the housing 21, room temperature).

[0077] Methods for reducing the amount of light irradiated per unit area of ​​workpiece W can include, for example, reducing the amount of light emitted from the light source 42 itself (adjusting the current value). Alternatively, known methods such as reducing the distance between the surface of workpiece W and the light source 42 (adjusting to make the light source 42 farther from workpiece W) or shortening the irradiation time can be used. By changing the distance between the surface of workpiece W and the light source 42, and by changing the pressure around the light path during irradiation from the light source 42, the energy of the light reaching the surface of workpiece W can also be adjusted. These methods can also be combined to change the amount of light irradiated per unit area, including VUV light.

[0078] Furthermore, as described above, when light from the light source 42 irradiates the workpiece W, the substrate processing apparatus 1 performs gas supply from the gas supply unit 30 and gas discharge from the gas discharge unit 32. Therefore, it can be said that Ar gas replacement occurs while maintaining the pressure inside the housing 21.

[0079] During the irradiation period of light from the light source 42 (between time t3 and time t4), the pressure inside the housing 21 can be constant or can be gradually changed. In the example shown in Figure 8, during the irradiation period of light from the light source 42, the pressure inside the housing 21 is set to 10000 Pa in order to suppress degassing (gas release) from the surface of the workpiece W. However, it is considered that the amount of degassing generated will gradually decrease during the irradiation period of light from the light source 42. At this time, the pressure inside the housing 21 can also be controlled to change slightly and gradually. With these configurations, light can be irradiated onto the workpiece W in a state closer to a vacuum.

[0080] Step S03: Heat treatment is performed on the workpiece W after it has been irradiated with light including VUV light. This stage of heat treatment is for the uncured photoresist film and is called PAB (Pre Applied Bake).

[0081] Step S04: Perform an exposure treatment on the workpiece W after heat treatment (PAB). In the exposure treatment, energy lines are irradiated onto the exposure target area of ​​the photoresist film formed on the workpiece W using methods such as liquid immersion exposure.

[0082] Step S05: Heat treatment is performed on the exposed workpiece W. This stage of heat treatment is for the uncured photoresist film, and is called PEB (Post Exposure Bake).

[0083] Step S06 involves developing the workpiece W after heat treatment (PEB). During development, a developer is applied to the surface of the workpiece W, and then washed away with a rinsing solution. This forms a predetermined pattern on the surface of the workpiece W. Alternatively, a post-bake (PB) process can be performed after development. Furthermore, the coating, heat treatment (PAB, PEB), exposure, and development processes described in steps S01 and S03-S06 can be performed, for example, using a known substrate processing system that includes a coating and development apparatus and an exposure apparatus. Each process can also be performed using the aforementioned coating and development apparatus 200.

[0084] By performing the above series of processes, compared with conventional substrate processing methods, it is possible to improve the exposure sensitivity of the photoresist film and further improve the roughness of the photoresist pattern after exposure and development. This point will be explained below.

[0085] Figure 9 is an image showing the shape change of the photoresist pattern caused by the presence or absence of step S02. Figure 9(a) is an SEM image showing the state of the photoresist pattern when other processing is performed without step S02, and Figure 9(b) is an SEM image showing the state of the photoresist pattern when step S02 is performed. The results shown in Figures 9(a) and 9(b) are the results of forming a photoresist pattern under the same manufacturing conditions, including the type of photoresist material, except for whether light including VUV light is irradiated in step S02 and the exposure conditions (effective dose) during pattern formation. In addition, the exposure is performed using an "exposure apparatus using a KrF light source". Furthermore, comparing the two manufacturing conditions, it is confirmed that "the effective dose (dose) during exposure decreases due to the irradiation of light including VUV light". The decrease in effective dose indicates that the sensitivity of the photoresist film to the irradiated light during exposure increases. Furthermore, the results of irradiation with VUV light confirmed that "the LER (Line Edge Roughness) and LWR (Line Width Roughness) of the photoresist pattern were also improved." Additionally, irradiation with VUV light showed an effective dose improvement of 29.4% (effective dose decreased by 29.4% due to irradiation with VUV light), an LER improvement of 16.5%, and an LWR improvement of 9.2%.

[0086] As described above, it is confirmed that by irradiating the surface of the workpiece W with a photoresist film formed with light containing VUV light before exposure processing, the sensitivity of the photoresist film during exposure is increased, and the surface roughness after pattern formation is also improved.

[0087] Figure 10, similar to Figures 9(a) and 9(b), shows the evaluation results of the effect of the presence or absence of step S02. In Figure 10, the changes in the photoresist film thickness after each step are evaluated for the case without irradiation of light containing VUV light (step S02) (Ref.) and the case irradiated with light containing VUV light (step S02). Next, light containing VUV light is irradiated, preparing two cases with an irradiation amount (cumulative irradiation amount per unit area) of 12 mj / cm2 and 25 mj / cm2. In addition, the light L1 emitted from the light source 42 is light with a continuous spectrum between wavelengths of 10 nm and 400 nm (including VUV light from 10 nm to 200 nm).

[0088] As shown in Figure 10, "COT" refers to the formation of the photoresist film (corresponding to step S01); "VUV" refers to irradiation with light containing VUV light (corresponding to step S02). Further, "PAB" refers to post-exposure heat treatment (corresponding to step S03), specifically, heat treatment at 130°C for 60 seconds. "PEB" refers to post-exposure heat treatment (corresponding to step S05), specifically, heat treatment at 95°C for 60 seconds. In addition, "etching" refers to etching after the photoresist pattern is formed (after development). Regarding etching conditions, it includes: using Ar and CF4 gases as the gases supplied to the processing space; setting the processing time to 5 seconds to prevent the photoresist film from excessively reducing, all under the same conditions. In addition, for the workpiece W that has not been irradiated with light containing VUV light (step S02), in "VUV", the workpiece W is placed in an environment with pressure changes, similar to the processing in step S02, and is not irradiated with light containing VUV light.

[0089] As shown in Figure 10, for the workpiece W that was not irradiated with light including VUV light (step S02), the difference between the film thickness after PEB and the film thickness after etching is approximately 5 mm or more. That is, the inventors believe that film loss of the photoresist film occurs during the etching process using photoresist patterns. On the other hand, for the workpiece W that was irradiated with light including VUV light (step S02), regardless of the exposure amount, the difference between the film thickness after PEB and the film thickness after etching is approximately 5 mm or less, and the film loss during etching is reduced. Furthermore, it was confirmed that "the film thickness is reduced due to irradiation with light including VUV light (step S02)", and further, the film thickness is significantly reduced due to the pre-exposure heat treatment (PAB) after irradiation with VUV light (step S02). In addition, the inventors believe that although the results of the changes in film thickness after each treatment shown in Figure 10 are not directly related to the increase in sensitivity to exposure and the improvement in roughness, they help to estimate the changes within the photoresist film. This point will be discussed in detail later.

[0090] [Substrate Processing Method - 2] Next, referring to FIG11, the second example will be described. FIG11 shows the steps for forming a photoresist pattern on the workpiece W as a flowchart. Hereinafter, the description will focus on the points that differ from the first example.

[0091] Step S11: Coat the surface of the workpiece W with a photoresist liquid to form a photoresist film. The method for forming the photoresist film is not particularly limited.

[0092] Step S12: Heat treatment is performed on the workpiece W on which the photoresist film is formed. This stage of heat treatment is for the uncured photoresist film and is called PAB (Pre Applied Bake).

[0093] Step S13: The substrate processing apparatus irradiates the surface of the workpiece W on which the photoresist film is formed with light containing VUV light using the substrate processing apparatus 1. The operation steps of the substrate processing apparatus 1 when irradiating with light containing VUV light are the same as in the first example.

[0094] Step S14: Exposure treatment is performed on the workpiece W after it has been irradiated with light including VUV light. In the exposure treatment, energy lines are irradiated onto the exposed portion of the photoresist film formed on the workpiece W using methods such as liquid immersion exposure.

[0095] Step S15, heat treatment is performed on the exposed workpiece W. This stage of heat treatment is the heat treatment of the uncured photoresist film, which is called PEB (Post Exposure Bake).

[0096] Step S16: Perform a developing process on the workpiece W after heat treatment (PEB). In the developing process, a developing solution is applied to the surface of the workpiece W and then washed away with a rinsing solution. This forms a predetermined pattern on the surface of the workpiece W. Alternatively, a heat treatment (PB: Post Bake) can be performed again after the developing process.

[0097] According to the second example above, compared with the conventional substrate processing method, it is also possible to improve the exposure sensitivity of the photoresist film and further improve the roughness of the photoresist pattern after exposure and development.

[0098] Figure 12, similar to Figure 10, shows the evaluation results of the impact of the presence or absence of step S02. Similar to Figure 10, Figure 12 evaluates the changes in photoresist film thickness after each step for the case without VUV light irradiation (Ref.) and the case with VUV light irradiation. Next, VUV light irradiation was performed, preparing exposure amounts of 12 mJ / cm² and 25 mJ / cm². Furthermore, the text descriptions in the figures are the same. Because the processing order is different, the order of description differs from that in Figure 10.

[0099] In the results shown in Figure 12, for the workpiece W that was not irradiated with light containing VUV light (step S02), the difference between the film thickness after PEB and the film thickness after etching is approximately 5 mm or more. That is, the inventors believe that film loss of the photoresist film occurs during etching using a photoresist pattern. On the other hand, for the workpiece W that was irradiated with light containing VUV light (step S02), regardless of the exposure amount, the difference between the film thickness after PEB and the film thickness after etching is approximately 5 mm or less, and the film loss during etching is reduced. Furthermore, it was confirmed that "the film thickness is reduced due to irradiation with light containing VUV light (step S02)," and further, the film thickness is significantly reduced due to post-exposure heat treatment (PEB) after irradiation with light containing VUV light (step S02).

[0100] Based on the results shown in Figures 10 and 12, it is confirmed that "by irradiating with light containing VUV light, the film loss during etching is reduced compared to the case without irradiation." These results confirm that "irradiation with light containing VUV light can improve etching resistance." On the other hand, it is confirmed that "compared to the results shown in Figure 10, the film loss increases after PAB, while in the results shown in Figure 12, the film loss increases after PEB." This phenomenon confirms that "regardless of the order of PAB and irradiation with light containing VUV light, etching resistance improves with irradiation with light containing VUV light."

[0101] Furthermore, in either of the results shown in Figures 10 and 12, the film thickness is reduced when irradiated with light containing VUV light compared to when not irradiated with light containing VUV light. Further, according to the results shown in Figure 10, the reduction in film thickness (volume shrinkage) caused by the "heat treatment after irradiation with light containing VUV light (PAB)" is greater than that of other treatments. Moreover, according to the results shown in Figure 12, the reduction in film thickness (volume shrinkage) caused by the "heat treatment after irradiation with light containing VUV light (PEB)" is greater than that of other treatments. Considering these phenomena, the reduction in film thickness caused by subsequent heating is exacerbated when irradiating with light containing VUV light; therefore, it is advisable to consider reducing the heating treatment of the photoresist film in a series of processes.

[0102] [Substrate Processing Method - 3] Next, referring to FIG13, the third example will be described. FIG13 shows the steps for forming a photoresist pattern on the workpiece in a flowchart. The third example differs from the first example in that the "PAB" is not performed.

[0103] That is, in step S21, a photoresist liquid is coated on the surface of the workpiece W to form a photoresist film. The method of forming the photoresist film is not particularly limited.

[0104] Step S22: The substrate processing apparatus irradiates the surface of the workpiece W on which the photoresist film is formed with light containing VUV light using the substrate processing apparatus 1. The operation steps of the substrate processing apparatus 1 when irradiating with light containing VUV light are the same as in the first example.

[0105] Step S23: Perform an exposure process on the workpiece W after it has been irradiated with light including VUV light. In the exposure process, energy lines are irradiated onto the exposed portion of the photoresist film formed on the workpiece W using methods such as liquid immersion exposure.

[0106] Step S24, heat treatment is performed on the exposed workpiece W. This stage of heat treatment is the heat treatment of the uncured photoresist film, which is called PEB (Post Exposure Bake).

[0107] Step S25: Perform a developing process on the workpiece W after heat treatment (PEB). In the developing process, a developer is applied to the surface of the workpiece W and then washed away with a rinsing solution. This forms a predetermined pattern on the surface of the workpiece W. Alternatively, a heat treatment (PB: Post Bake) can be performed again after the developing process.

[0108] According to the third example above, compared with the conventional substrate processing method, by irradiating light containing VUV light, the exposure sensitivity of the photoresist film can be improved, and the roughness of the photoresist pattern after exposure and development can be further improved.

[0109] Furthermore, in the third example, by reducing the number of heating treatments, not only will the exposure sensitivity brought about by irradiation with light including VUV light be improved, but the roughness improvement effect of the photoresist pattern will also be improved.

[0110] Furthermore, before irradiating a workpiece W coated with photoresist with light including VUV light from the light source 42 after the workpiece W is moved into the space inside the housing 21, the pressure can be reduced to decrease the oxygen concentration in the space. In this way, the solvent in the photoresist evaporates further, and the penetration of VUV light into the photoresist film is further promoted.

[0111] Furthermore, when the solvent in the photoresist evaporates, the photoresist loses its fluidity and solidifies to a state where it can form a pattern during exposure and development, and when the irradiation process including VUV light is completed, it can also be configured without PAB as described above. In this case, it is possible to prevent the application of excessive heat before exposure as described above, and to achieve the time reduction resulting from the reduction of processes.

[0112] On the other hand, heat energy may be provided as an auxiliary measure in response to the photoresist state after exposure to light including VUV light, or additional control may be applied to the photoresist film before exposure, and the workpiece W may be constructed with PAB according to our purpose.

[0113] Figure 14 shows the LER measurement results relative to the linewidth (CD: Critical Dimension) of the photoresist pattern during the implementation of Example 3. That is, the roughness (LER) of the photoresist pattern is evaluated when the photoresist pattern is formed with each linewidth dimension. In Figure 14, for the case of irradiation with light containing VUV light, the LER relative to CD is shown for the case without pre-exposure heat treatment (PAB) (the same steps as shown in Figure 13). In addition, Figure 14 shows the case without PAB and the case with PAB for the case without irradiation with light containing VUV light (Ref.).

[0114] Based on the results shown in Figure 14, comparing the two results when no light containing VUV light was applied (Ref.), it can be confirmed that "the LER of each linewidth increases due to pre-exposure heating (PAB) treatment." On the other hand, it is confirmed that "by applying light containing VUV light, the LER is further improved compared to the case where no light containing VUV light was applied (Ref.) and no pre-exposure heating (PAB) treatment was performed." As described above, it can be confirmed that "by applying light containing VUV light to the photoresist film before forming the photoresist pattern, the LER of the photoresist pattern can be improved."

[0115] Furthermore, based on the results shown in Figure 14, it is confirmed that "even if the pre-exposure heating process (PAB) is omitted, the LER relative to each linewidth can still be improved for the photoresist pattern." That is, it is confirmed that "when forming a photoresist pattern according to the method shown in Example 3, a photoresist pattern with improved surface roughness can also be obtained."

[0116] [Review of the effect of irradiation with VUV light] As described in the above embodiment, it was confirmed that "when the photoresist film is irradiated with VUV light before exposure processing, the sensitivity during exposure is increased." Furthermore, it was confirmed that "the etch resistance of the photoresist pattern obtained by exposure and development is improved and the surface roughness is improved." Regarding the effect of irradiation with VUV light on the photoresist film and photoresist pattern as described above, it will be explained with reference to FIG15.

[0117] Figure 15 schematically shows the internal state of the photoresist film R in each step of the process of forming the photoresist pattern. Figure 15(a) shows the state of the photoresist film formed on the workpiece W. Figure 15(b) shows the state of the photoresist film after being irradiated with light including VUV light. Figure 15(c) shows the state of the photoresist film after exposure. Figure 15(d) shows the state of the photoresist film after heat treatment (PEB) following exposure.

[0118] As an example, photoresist materials used to form photoresist films for EUV lithography are sometimes prepared by dispersing a polymer, an acid-generating agent (photosensitive agent), and a quenching agent (alkali) in a solvent. It is known that in photoresist materials composed of these components, the acid-generating agent decomposes during exposure, ultimately producing acid. This acid is then used to transfer masking information as an acid image onto the photoresist. Subsequently, post-exposure heating (PEB) is performed to induce an acid-catalyzed reaction.

[0119] As shown in Figure 15(a), if a photoresist film R is formed, then inside the film, compared to the lower layer, polymer C1, acid generator C2, and quencher C3 remain in the upper layer, resulting in so-called layer separation. On the other hand, light irradiated from the light source 42, if its wavelength is larger, its intensity is greater, and it can reach the deeper layer (lower layer) of the photoresist film. However, regarding a portion of the spectrum of light irradiated from the light source 42, since the wavelength of its peak is included in the frequency domain of VUV light (10nm to 200nm) (more precisely, light including the frequency domain of 100nm to 200nm), the intensity of light with a larger wavelength is small. Therefore, less light irradiated from the light source 42 reaches the deeper layer of the photoresist film. In other words, both short-wavelength and long-wavelength light reach the surface layer (upper layer) where the various components of the photoresist material are abundant; on the other hand, only long-wavelength light reaches the deeper layer (lower layer) where the various components of the photoresist material are scarce. As far as the photoresist film as a whole is concerned, light including VUV light will irradiate each part according to the degree of component distribution of the photoresist material.

[0120] Figure 15(b) shows the reaction state of the photoresist film R after irradiation with VUV light. Irradiation with VUV light causes the polymer backbone to decompose (break), thus reducing the stress on the photoresist film R. On the other hand, the acid generator C2 in the photoresist film R decomposes due to VUV light irradiation, thus generating acid (H+). Furthermore, the irradiation with VUV light occurs between time t3 and time t4 in Figure 3. Afterwards (after time t4), the housing 21 is returned to the atmospheric environment. At this time, the acid (H+) generated in the photoresist film R moves within the film due to stress changes caused by changes in the surrounding gas environment. Therefore, the acid diffuses within the photoresist film R.

[0121] Furthermore, numerous cross-linking reactions occur in the photoresist film during and after irradiation with VUV light. Therefore, the surface of the photoresist film hardens, resulting in increased etching resistance. Furthermore, during processing in the substrate processing apparatus 1, as shown in FIG8, processing is performed under near-vacuum conditions compared to atmospheric pressure. Therefore, the inventors believe that a portion of the solvent inside the photoresist film will diffuse outwards from the photoresist film R during processing.

[0122] Figure 15(c) shows the reaction state of the photoresist film R caused by exposure. The cross-linking reaction is further promoted in the photoresist film R by the light irradiated during exposure. Therefore, hardening occurs in the areas of the photoresist film R that form the patterned surface.

[0123] Figure 15(d) shows the state in which acid (H+) is generated in the photoresist film R by post-exposure heating (PEB), causing the deprotection of the protecting group D1, and the development process is performed under these conditions. The developer used in the development process can be considered to have a "structure that can hydrate with water molecules". Therefore, the inventors believe that the developer easily combines with the polar part (deprotecting group D2), and therefore believe that if there is a large number of polar parts, it is easy to penetrate into the photoresist film R. In addition, when the acid (H+) diffuses in the photoresist film R, the developer also easily penetrates into the area where there is a large amount of acid. That is, if deprotection is performed, there are more polar parts (deprotecting groups), so the developer becomes easier to penetrate. Furthermore, when there is a large amount of solvent remaining in the photoresist film R, the developer also easily penetrates into the film.

[0124] When exposed to light containing VUV light and then developed without heat treatment (PAB), the inventors believed that the proportion of solvent remaining in the photoresist film R as a whole would be higher. Therefore, it could be inferred that the permeability of the developer would be higher. However, in reality, an improvement in LER was confirmed (Fig. 14). Based on this result, it can be said that in order to "form a photoresist pattern with improved roughness even without heat treatment (PAB) when exposed to light containing VUV light", sufficient crosslinking reaction was carried out, or the decomposition reaction caused by VUV light that reduces stress in the film was carried out. Therefore, even if "heat treatment (PAB) after exposure to light containing VUV light" is omitted, the etch resistance of the photoresist pattern is improved and the roughness is improved.

[0125] Furthermore, as in Example 2, when irradiating with light containing VUV light after pre-exposure heat treatment (PAB), the decomposition of the main chain, diffusion of acid (H+), and cross-linking reaction caused by irradiation with VUV light can be promoted. Therefore, as shown in the explanation related to Figure 9, the sensitivity to exposure can be increased. However, in addition to the evaporation of solvent inside the photoresist film R during heat treatment (PAB), solvent evaporation may also occur when irradiated with light containing VUV light. Therefore, during the development process, regardless of whether light is irradiated during exposure, the overall state becomes one with very little internal solvent. Therefore, the developer easily penetrates into the entire photoresist film R, and the photoresist pattern may collapse. This phenomenon also occurs when heat treatment (PAB) is performed after irradiation with light containing VUV light. Therefore, when performing heat treatment (PAB), this phenomenon must be taken into account, and the conditions of each treatment must be set accordingly. The inventors believe that, considering the partial occurrence of the crosslinking reaction by irradiating with VUV light as described above, the method of performing heat treatment (PAB) after irradiation with VUV light can better suppress the evaporation of solvent from the photoresist film R as a whole. Therefore, the inventors believe that, as shown in the first example above, the method of performing heat treatment (PAB) after irradiation with VUV light can better improve the durability of the photoresist pattern. In addition, the inventors believe that by performing the heat treatment (PAB) at a low temperature and for a short time, the evaporation of solvent caused by heating can be suppressed. Therefore, they believe that the effect on the photoresist film can still be adjusted by adjusting the heating conditions during the heat treatment (PAB).

[0126] [Example of Modification of Substrate Processing Method] Figure 16 shows an example of modification of the substrate processing method. Compared with the first example above, the modified example shown in Figure 16 adds a process of changing the heating conditions according to "the change in the surface of the photoresist film caused by irradiation with light including VUV light". Therefore, only the points of modification will be briefly described.

[0127] Step S31: A photoresist liquid is coated onto the surface of the workpiece W to form a photoresist film. In this way, a photoresist film is formed on the entire surface of the workpiece W.

[0128] In step S32, the surface of the workpiece W on which the photoresist film is formed is irradiated with light containing VUV light using the substrate processing apparatus 1. The workpiece W held by the housing 21 is irradiated with light L1 from the light source unit 42, which is light containing VUV light.

[0129] Step S33: Evaluate the surface of the workpiece W after irradiation with VUV light. Furthermore, in step S34: Adjust the heating conditions based on the evaluation results of the workpiece W's surface.

[0130] Step S33: Measure the change in photoresist film thickness. As described above, for example, based on the amount of reduction in film thickness, evaluate the extent to which the internal structure changes due to VUV light. Then, based on this result, adjust the conditions for subsequent heat treatment. Adjustments may include, for example, whether to perform pre-exposure heat treatment (PAB), and the heating temperature / time during the process. Additionally, the heating conditions may also be adjusted for post-exposure heat treatment (PEB).

[0131] After step S35, the process is performed based on the results of the adjustment of heating conditions (step S34). In step S35, the workpiece W is subjected to heat treatment after being irradiated with light including VUV light. This stage of heat treatment is a heat treatment of the uncured photoresist film, which is called PAB (Pre Applied Bake).

[0132] Step S36: Perform an exposure treatment on the workpiece W after heat treatment (PAB). In the exposure treatment, energy lines are irradiated onto the exposure target area of ​​the photoresist film formed on the workpiece W using methods such as liquid immersion exposure.

[0133] Step S37, heat treatment is performed on the exposed workpiece W. This stage of heat treatment is the heat treatment of the uncured photoresist film, which is called PEB (Post Exposure Bake).

[0134] Step S38: Perform a developing process on the workpiece W after heat treatment (PEB). In the developing process, a developing solution is applied to the surface of the workpiece W and then washed away with a rinsing solution. This forms a predetermined pattern on the surface of the workpiece W. Alternatively, a heat treatment (PB: Post Bake) can be performed again after the developing process.

[0135] When processing according to the steps shown in Figure 16, heating treatment can be performed taking into account the effects of VUV light, so it is easy to prevent photoresist pattern collapse, roughness deterioration, etc. that may occur due to excessive heating treatment.

[0136] Alternatively, steps S33 and S34 can be substituted, and the conditions of the preceding series of processes can be changed, for example, by evaluating the workpiece W after the photoresist pattern is formed. For example, it can be configured as follows: measuring or estimating the linewidth uniformity of the photoresist pattern, and adjusting various exposure conditions or the irradiation time / amount of VUV light based on the results.

[0137] [Relationship between wavelength distribution of light containing VUV light and effect] In the substrate processing apparatus 1, the light irradiating the workpiece W, that is, the light emitted from the light irradiation mechanism 40, is, as described above, light containing vacuum ultraviolet light (VUV light). The wavelength of the light emitted from the light irradiation mechanism 40 may be closely related to the improvement of sensitivity during photoresist film exposure and the improvement of linewidth uniformity in the photoresist pattern. This point will be explained with reference to FIG17.

[0138] Figure 17 shows the evaluation results of the relationship between "the improvement rate (rise rate) of the sensitivity of the photoresist film to the illumination light during exposure" and "the improvement rate of the LER (Line Edge Roughness) of the photoresist pattern". In particular, Figure 17 shows the results when the wavelength of the light emitted from the light source 42 (lamp 44) is limited to a specific wavelength. Specifically, it shows the evaluation results for three types: when the wavelength range of the illumination light from the light source 42 is larger than 165nm, when it is 125nm to 160nm, and when it is 115nm to 400nm. The wavelength range of 115nm to 400nm is the condition for directly using a deuterium lamp that is generally used as lamp 44. On the other hand, when the wavelength range is larger than 165nm and when it is 125nm to 160nm, the wavelength range is adjusted by passing the light emitted from the deuterium lamp through a filter (e.g., a bandpass filter) that only transmits within a predetermined wavelength range. For each wavelength of light, the amount of light irradiation (including VUV light) was varied within the range of 0.3 mJ / cm² to 2 mJ / cm². In each result, a tendency was observed that increasing the amount of light resulted in a higher rate of improvement in sensitivity.

[0139] As shown in Figure 17, under the condition of directly using a deuterium lamp, i.e., in the wavelength range of 115nm to 400nm, if the amount of light irradiation (including the amount of VUV light) is changed to the level of 0.5mj / cm2 to 1.1mj / cm2, the sensitivity will gradually increase. On the other hand, relative to the gradual increase in sensitivity, the LER improvement rate will decrease. This tendency is also the same for the other two results.

[0140] On the other hand, when the wavelength range of the irradiated light from the light source 42 is larger than 165nm, if the irradiation amount (including the amount of VUV light) is changed to the level of 0.6mj / cm2 to 1.9mj / cm2, the improvement rate of LER will decrease as the sensitivity gradually increases. Furthermore, when the wavelength range of the irradiated light from the light source 42 is 125nm to 160nm, if the irradiation amount (including the amount of VUV light) is changed to the level of 0.3mj / cm2 to 0.6mj / cm2, the improvement rate of LER will decrease as the sensitivity gradually increases. However, comparing these two results, when the wavelength range of the irradiated light is larger than 165nm, compared to when the wavelength range of the irradiated light is 125nm to 160nm, it is confirmed that "the decrease in the improvement rate of LER is very significant relative to the rate of increase in sensitivity." Furthermore, when the wavelength range of the illumination light is 125nm–160nm, the improvement rate of LER is above 0% until the rate of improvement (rate of increase) in sensitivity reaches 35%, confirming that "both sensitivity increase and LER improvement are achieved." In other words, when the wavelength range of the illumination light is 125nm–160nm, "sensitivity can be improved to a 35% level without deteriorating LER." In particular, the results when the wavelength range of the illumination light is 125nm–160nm are compared with the results when the wavelength range is 115nm–400nm (deuterium lamp), showing a higher rate of improvement in LER to achieve the same rate of increase in sensitivity. From this phenomenon, it is confirmed that "when the wavelength range of the illumination light is 125nm–160nm, a state of improvement in both sensitivity and LER can be obtained."

[0141] Regarding the above results, let's examine the example of the spectrum shown in Figure 18. The spectrum Sp1 shown in Figure 18 schematically displays the wavelength range of 100nm to 220nm in the spectrum of a deuterium lamp typically used in the light source unit 42. As shown in spectrum Sp1, the deuterium lamp has a large peak near a wavelength of 160nm. Therefore, when the illumination light emitted from the light source unit 42 is viewed as a whole, it contains at most the components of that wavelength range that constitute the peak near a wavelength of 160nm. In addition, although light in other wavelength ranges is included in the light emitted from the light source unit 42, their proportion is lower relative to the overall illumination light.

[0142] On the other hand, spectrum Sp2 schematically shows the spectrum of light after passing through the filter in the evaluation results shown in Figure 17, with the wavelength range of the irradiated light being 125nm to 160nm. Although spectrum Sp2 also depends on the characteristics of the filter, compared with spectrum Sp1, the peak of light near wavelength 160nm is smaller. As a result, the light components in the wavelength range of 125nm to 160nm are somewhat equal. That is, the intensity of light at each wavelength becomes more similar. In other words, when the irradiated light emitted from the light source 42 is viewed as a whole, the proportion of components in the wavelength range that constitute the peak near wavelength 160nm is lower, and the proportion of components in other wavelength ranges is higher.

[0143] As explained with reference to Figure 15, by irradiating the photoresist film with light containing VUV light, the decomposition of the main chain, the diffusion of acid (H+), and the cross-linking reaction can be promoted. Furthermore, the longer the wavelength of the light irradiating the photoresist film from the light source 42, the greater its intensity, and the deeper (lower) layer of the photoresist film can be reached. Therefore, when a large amount of light with relatively long wavelengths is present, it is more effective to irradiate the entire photoresist film with light containing VUV light. On the other hand, the improvement of LER depends on the hardening of the photoresist film on its surface. Therefore, in order to more significantly achieve the surface modification of the photoresist film caused by the irradiation light, it is necessary to promote the reaction of the photoresist film near its surface. Therefore, the inventors believe that, for balancing the improvement of sensitivity and LER, the key to the irradiation light is to contain a large amount of short-wavelength components. Therefore, the inventors believe that, considering both the improvement of sensitivity and the improvement of LER, the more effective way is to make it into the shape shown in the spectrum Sp2, that is, to use light with small distribution deviations of light of each wavelength as the illumination light, compared to the shape shown in the spectrum Sp1.

[0144] Furthermore, as a method to reduce the distribution deviation of each wavelength of light in the light emitted from the light source 42 and irradiating the workpiece W, it is possible to change the lamp 44 to one that matches its characteristics. In addition, as shown in FIG19, a method is considered whereby the light emitted from the light source 42 is passed through a filter 50 (light adjustment member) that adjusts the transmittance of each wavelength of light before irradiating the workpiece W. The filter 50 has characteristics such as increasing the proportion of light components with wavelengths shorter than 160 nm in the VUV light, as described above for the spectrum Sp2, thereby reducing the proportion of light components near 160 nm. It can also be configured such that, using such a filter 50, the characteristics of the light emitted from the lamp 44 are further modified to characteristics suitable for improving sensitivity and LER (changing the spectrum shape) before irradiating the workpiece W. In this case, the inventors believe that the effect produced by irradiating light containing vacuum ultraviolet (VUV) light can be improved.

[0145] Furthermore, although the filter 50 is illustrated as a light adjustment component in Figure 19, it is not limited to this. For example, when a transmission window 21x is provided in the housing 21 of the processing chamber 20 to allow light L1 from the light source 42 to pass through, the transmission window 21x can also function as a light adjustment component. That is, the transmission window 21x can also be constructed of a component made of a material that changes the transmittance of light at each wavelength, so that its characteristics are changed in the same way as when light passing through the transmission window 21x passes through the filter 50. By changing the configuration and arrangement of the light source 42, the arrangement of the light adjustment component can be modified.

[0146] [Function] As explained above, in the substrate processing apparatus 1 and the substrate processing method, within the housing 21 which serves as the processing container, the surface of a substrate (workpiece W) to which a photoresist film made of EUV photoresist material is formed is irradiated with light including vacuum ultraviolet light (VUV light) before exposure processing. By irradiating the surface of the substrate to which the photoresist film made of EUV photoresist material is formed with light including vacuum ultraviolet light, chemical bonds in the photoresist film break, resulting in an increase in the sensitivity of the photoresist film during exposure.

[0147] The light containing vacuum ultraviolet light is light containing at least a portion of the frequency domain of wavelengths from 100 nm to 200 nm. As described above, by irradiating the photoresist film with light containing at least a portion of the frequency domain of wavelengths from 100 nm to 200 nm, chemical bonds in the photoresist film break in many places, thereby increasing the sensitivity of the photoresist film during exposure.

[0148] The amount of light per unit area of ​​the substrate surface containing vacuum ultraviolet light is smaller than the amount of light when the substrate is irradiated with vacuum ultraviolet light after exposure. When the substrate is irradiated with vacuum ultraviolet light before exposure, even a small amount of light can penetrate the photoresist film, thus improving the effect of increasing the sensitivity to exposure.

[0149] Light is irradiated when the substrate temperature is approximately the same as the ambient gas temperature outside the processing container. When light is irradiated when the substrate temperature is approximately the same as the ambient gas temperature, changes in the photoresist film properties caused by substrate temperature variations can be prevented.

[0150] Additionally, irradiation with light containing vacuum ultraviolet light can also be performed while the processing container is under reduced pressure. By irradiating with light containing vacuum ultraviolet light while the processing container is under reduced pressure, the penetration of the light containing vacuum ultraviolet light into the photoresist film is promoted, thereby increasing the sensitivity. Alternatively, after reducing the pressure inside the processing container to a predetermined vacuum level, the pressure inside the processing container can be increased to a predetermined pressure below atmospheric pressure before irradiating with light containing vacuum ultraviolet light. With these configurations, degassing (gas release) from the substrate surface can be suppressed.

[0151] For example, exposure processing can also be performed without heat treatment after irradiation with light including vacuum ultraviolet light. By performing exposure processing without heat treatment, overheating of the substrate can be prevented.

[0152] Furthermore, as another example, a heat treatment can be performed after irradiation with light including vacuum ultraviolet light and before exposure processing. By performing a heat treatment before exposure processing, the reaction of the photoresist film on the substrate can be promoted, preventing insufficient exposure.

[0153] Alternatively, light containing vacuum ultraviolet light emitted from the light source 42 can be transmitted through components such as the filter 50, which serves as a light adjustment component, to irradiate the substrate surface in a state where the difference in intensity distribution of light of each wavelength is smaller than before transmission. At this time, by transmitting light through the light adjustment component, the difference in intensity distribution of light containing vacuum ultraviolet light of each wavelength can be reduced to irradiate the substrate. As a result, the photoresist film can be irradiated with light in a state where the proportion of light of various wavelengths is closer to uniform, thus improving the sensitivity increase effect during photoresist film exposure.

[0154] Furthermore, as described in the modified examples, the substrate surface irradiated with light containing vacuum ultraviolet light can also be evaluated, and the processing conditions for the substrate can be changed accordingly. As mentioned above, by changing the processing conditions for the substrate based on the evaluation results of the substrate surface, for example, appropriate conditions can be selected to correspond to "the changes in the surface caused by irradiation with light containing vacuum ultraviolet light". Furthermore, the substrate to be evaluated, as shown in FIG14, can be a substrate after irradiation with light containing vacuum ultraviolet light and before heating, or a substrate with a photoresist pattern formed after exposure and development. In the latter case, the changes can be reflected in the processing conditions of the substrate in subsequent processing.

[0155] The substrate processing apparatus 1 can also be disposed within the stacking section of the coating and developing apparatus 200 where processing modules are stacked, and at a position that forms the substrate transport path between the photoresist forming module COT and the exposure apparatus S4. With these configurations, the substrate can be transported in the order of substrate processing, and the processing performed by the substrate processing apparatus 1 can be performed. Therefore, the reduction in the operating efficiency of the coating and developing apparatus 200 can be further prevented, and the processing performed by the substrate processing apparatus 1 can be performed.

[0156] The above description addresses various exemplary embodiments, but is not limited to these exemplary embodiments. Various omissions, substitutions, and changes are also possible. Furthermore, elements from different embodiments can be combined to form another embodiment.

[0157] For example, the arrangement and number of light source units 42 in the substrate processing apparatus 1 can be appropriately changed. Furthermore, components for controlling the path of light emitted from the light source units 42 can be added. Furthermore, the arrangement and configuration of each part within the substrate processing apparatus 1 can also be appropriately changed. Moreover, the pressure control described in the above embodiment is only one example; the stage before light from the light source units 42 is irradiated can also be included, thus changing the pressure control within the housing 21.

[0158] From the above description, for illustrative purposes, this specification describes various embodiments of the present invention. It should be understood that various modifications can be made without departing from the scope and spirit of the present invention. Therefore, the various embodiments disclosed in this specification are not intended to limit the present invention; the true scope and spirit are as shown in the appended claims. [Simplified Explanation of the Diagram]

[0008] Figure 1 is a diagram showing an exemplary embodiment of a substrate processing apparatus. Figure 2 is a schematic diagram showing the arrangement of the light source in the substrate processing apparatus. Figure 3 is a block diagram showing the functional configuration of the controller. Figure 4 is a block diagram showing the hardware configuration of the controller. Figure 5 is a perspective view illustrating an example of the arrangement of the substrate processing apparatus in a coating and developing apparatus. Figure 6 is a longitudinal side view illustrating an example of the arrangement of the substrate processing apparatus in a coating and developing apparatus. Figure 7 is a flowchart illustrating the first example of a substrate processing method. Figure 8 is a diagram illustrating the pressure change during substrate processing in the substrate processing apparatus. Figures 9(a) and 9(b) are diagrams showing an example of SEM images of a photoresist pattern when the processing content is changed. Figure 10 is a diagram showing an example of the change in the thickness of the photoresist film after each processing. Figure 11 is a flowchart illustrating the second example of a substrate processing method. Figure 12 is a diagram showing an example of the change in the thickness of the photoresist film after each processing. Figure 13 is a flowchart illustrating the third example of a substrate processing method. Figure 14 is a diagram showing an example of the Line Edge Roughness (LER) of a photoresist pattern relative to the Critical Dimension (CD). Figures 15(a) to 15(d) are diagrams schematically showing an example of the internal state of the photoresist film during each processing step. Figure 16 is a diagram showing a variation of the first example of the substrate processing method. Figure 17 is a diagram showing an evaluation example of the relationship between the wavelength of light emitted from the light source of the substrate processing apparatus and the sensitivity and the improvement rate of LER. Figure 18 is a diagram showing an example of the spectrum of light emitted from the light source of the substrate processing apparatus. Figure 19 is a diagram showing an example of a method for changing the spectrum of light from the light source of the substrate processing apparatus.

Claims

1. A substrate processing method, wherein, in a processing container, the surface of a substrate on which a photoresist film made of an EUV lithography photoresist material is formed is irradiated with light containing vacuum ultraviolet light before exposure processing; the light containing vacuum ultraviolet light is light containing at least a portion of the continuous spectrum components in the frequency domain with a wavelength of 100 nm to 200 nm; the distance between the substrate and the light source is a distance that will not cause temperature effects on the substrate.

2. The substrate processing method as described in claim 1, wherein, The amount of light per unit area of ​​the substrate surface containing vacuum ultraviolet light is less than the amount of light emitted when the substrate is irradiated with vacuum ultraviolet light after the exposure process.

3. The substrate processing method as described in claim 1, wherein, The light is applied when the substrate temperature is approximately the same as the ambient gas temperature.

4. The substrate processing method as described in claim 1, wherein, The processing container is irradiated with light containing vacuum ultraviolet light while under depressurized conditions.

5. The substrate processing method as described in claim 4, wherein, After depressurizing the processing container to a predetermined vacuum level, the pressure inside the processing container is increased to a predetermined pressure below atmospheric pressure, and then the container is irradiated with light containing vacuum ultraviolet rays.

6. The substrate processing method as described in claim 1, wherein, After being irradiated with light containing vacuum ultraviolet light, the exposure process is carried out without heat treatment.

7. The substrate processing method as described in claim 1, wherein, After being irradiated with light containing vacuum ultraviolet light and before the exposure process, a heating treatment is performed.

8. The substrate processing method as described in claim 1, wherein, The surface of the substrate that has been irradiated with light containing vacuum ultraviolet light is evaluated, and the processing conditions for the substrate are adjusted accordingly.

9. The substrate processing method as described in claim 1, wherein, The light, which contains vacuum ultraviolet light, emitted from the light source is transmitted through the light adjustment member, thereby irradiating the substrate surface in a state where the difference in intensity distribution of light of each wavelength is smaller than before transmission.

10. A computer-readable recording medium comprising: a program recorded for causing a device to perform a substrate processing method as described in any one of claims 1 to 9.

11. A substrate processing apparatus, comprising: a processing container; a light source unit for irradiating a substrate having a photoresist film formed of an EUV lithography photoresist material formed thereon with light containing vacuum ultraviolet light; and a control unit for controlling the light source unit to irradiate the substrate with the light containing vacuum ultraviolet light before exposure processing; wherein the light containing vacuum ultraviolet light is light containing a continuous spectral component of at least a portion of the frequency domain with a wavelength of 100 nm to 200 nm; and wherein the distance between the substrate and the light source unit is a distance that will not cause temperature effects on the substrate.

12. The substrate processing apparatus as claimed in claim 11, wherein, The control unit controls the light source unit so that the amount of light per unit area of ​​the substrate surface containing vacuum ultraviolet light is smaller than the amount of light when the substrate is irradiated with vacuum ultraviolet light after the exposure process.

13. The substrate processing apparatus as claimed in claim 11, wherein, The control unit controls the light source unit to irradiate the substrate when the temperature of the substrate is approximately the same as the temperature of the ambient gas.

14. The substrate processing apparatus as claimed in claim 11, wherein, The control unit controls the light source unit to irradiate the processing container with light containing vacuum ultraviolet light while the container is under depressurization.

15. The substrate processing apparatus of claim 11 further includes: a light adjustment member disposed on the light path of the light containing vacuum ultraviolet light emitted from the light source to the substrate; the light adjustment member causes the light containing vacuum ultraviolet light to be incident on the substrate surface in a state in which the difference in intensity distribution of light of each wavelength is smaller than before transmission.

16. The substrate processing apparatus of claim 11 is disposed in the stacked section of the processing module stack configuration in the coating and developing apparatus, at a position between the photoresist film forming module and the exposure apparatus that forms the transport path of the substrate.

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